Coating method for surface of grinding disc

Abstract

The invention discloses a coating method for the surface of a grinding disc. The coating method comprises the following steps: carrying out ion cleaning treatment on a ceramic grinding disc substrate by adopting an etching method; depositing a Ti layer on the surface of the ceramic grinding disc substrate by adopting medium-frequency sputter coating; depositing a compound layer on the surface of the Ti layer by adopting magnetron sputtering ion plating; wherein the compound layer is composed of Ti and DLC (Diamond Like Carbon); and depositing a DCL layer on the surface of the composite layer by adopting magnetron sputtering ion plating. By the adoption of the technical scheme, the problem can be solved by coating the surface of the ceramic grinding disc with the film, the working performance of a ground semiconductor internal coil cannot be affected, cold and heat imbalance of the surface of the grinding disc cannot be caused, and therefore the grinding effect is improved.

Description

Technical Field

[0001] The invention relates to the technical field of coating, and in particular to a coating method for the surface of a grinding disc. Background Art

[0002] A grinding disc is a tool that grinds or polishes semiconductor materials by rotating the disc. In the semiconductor industry, it works by rotating at a low speed under pressure to grind the workpiece, and it is also consumed and worn.

[0003] Since the flatness and temperature requirements for grinding workpieces are very high, ceramic grinding discs are usually used. However, the temperature of existing ceramic grinding discs will still rise by 10-15°C during the processing, which will affect the working performance of the coil inside the semiconductor. The traditional solution is to spray cooling water on the surface of the grinding disc for cooling, but this cooling method is not effective and will cause uneven heat and cold on the surface of the grinding disc, thus affecting the grinding effect. Summary of the invention

[0004] The purpose of an embodiment of the present invention is to provide a coating method for the surface of a grinding disk. By coating the surface of a ceramic grinding disk, the above-mentioned problem can be solved without affecting the working performance of the internal coil of the semiconductor being ground, or causing hot and cold imbalance on the surface of the grinding disk, thereby improving the grinding effect.

[0005] In order to achieve the above object, an embodiment of the present invention provides a coating method for the surface of a grinding disc, comprising:

[0006] The ceramic grinding disc substrate is ion cleaned by etching method;

[0007] Depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating;

[0008] Depositing a composite layer on the surface of the Ti layer by magnetron sputtering ion plating; wherein the composite layer consists of Ti and DLC;

[0009] The DCL layer is deposited on the surface of the composite layer by magnetron sputtering ion plating.

[0010] Furthermore, the etching method is used to perform ion cleaning on the ceramic grinding disk substrate, specifically comprising:

[0011] Place the ceramic grinding disc substrate in the reaction chamber of the etcher and start the vacuum pump;

[0012] When the vacuum degree in the reaction chamber is 4 Pa, argon gas with a flow rate of 800-900 sccm and oxygen gas with a flow rate of 150-200 sccm are introduced into the reaction chamber, and the vacuum degree is adjusted to be maintained at 3-4 Pa;

[0013] The ceramic grinding disc substrate is subjected to radio frequency glow treatment, wherein the cathode frequency of the radio frequency is 60 to 120 kHz, and the anode frequency of the radio frequency is 30 to 35 kHz.

[0014] Furthermore, the duration of the radio frequency glow is 25 seconds, and the temperature in the reaction chamber is 60-65°C.

[0015] Furthermore, the method of depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating specifically includes:

[0016] Argon gas with a flow rate of 800 sccm and oxygen gas with a flow rate of 50-100 sccm are introduced into the reaction chamber, and the medium-frequency sputtering power supply of the Ti target is turned on. A Ti layer is deposited on the surface of the ceramic grinding disk substrate at a sputtering pressure of 0.01 Pa and a sputtering power of 500-700 W; wherein the deposition temperature of the Ti layer is 80°C and the deposition time is 150 min.

[0017] Furthermore, the thickness of the Ti layer is 13-15 μm.

[0018] Furthermore, the method of depositing the composite layer on the surface of the Ti layer by magnetron sputtering ion plating specifically includes:

[0019] The vacuum degree in the reaction chamber was adjusted to 1.2×10 -3 Pa, introducing argon into the reaction chamber and adjusting the vacuum degree to maintain at 0.5 Pa;

[0020] Turn on the sputtering power of the Ti target and the C target, and deposit a composite layer on the surface of the Ti layer; wherein the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, and the deposition time is 100 to 120min.

[0021] Furthermore, the thickness of the composite layer is 10-15 μm.

[0022] Furthermore, the method of depositing the DCL layer on the surface of the composite layer by magnetron sputtering ion plating specifically includes:

[0023] Introduce methane into the reaction chamber and adjust the pressure of the argon environment to 0.1-0.5 Pa;

[0024] Turn on the sputtering power of the C target material, and deposit a DCL layer on the surface of the composite layer; wherein the deposition temperature of the DCL layer is 80-90° C., and the deposition time is 150-200 min.

[0025] Furthermore, the thickness of the DCL layer is 15-30 μm.

[0026] Compared with the prior art, the embodiment of the present invention provides a coating method for the surface of a grinding disc. First, an etching method is used to perform ion cleaning on the ceramic grinding disc substrate; then, a Ti layer is deposited on the surface of the ceramic grinding disc substrate by medium frequency sputtering coating; then, a composite layer is deposited on the surface of the Ti layer by magnetron sputtering ion plating, wherein the composite layer is composed of Ti and DLC; finally, a DCL layer is deposited on the surface of the composite layer by magnetron sputtering ion plating. The embodiment of the present invention can solve the above problems by coating the surface of the ceramic grinding disc, which will neither affect the working performance of the internal coil of the semiconductor being ground nor cause hot and cold imbalance on the surface of the grinding disc, thereby improving the grinding effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a flow chart of a preferred embodiment of a coating method for the surface of a grinding disc provided by the present invention;

[0028] Figure 2 It is a structural schematic diagram of a preferred embodiment of a ceramic grinding disc provided by the present invention. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0030] The present invention provides a method for coating the surface of a grinding disc. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for coating a surface of a grinding disc provided by the present invention, wherein the method comprises steps S11 to S14:

[0031] Step S11, using an etching method to perform ion cleaning on the ceramic grinding disk substrate;

[0032] Step S12, depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating;

[0033] Step S13, depositing a composite layer on the surface of the Ti layer by magnetron sputtering ion plating; wherein the composite layer consists of Ti and DLC;

[0034] Step S14: depositing a DCL layer on the surface of the composite layer by magnetron sputtering ion plating.

[0035] In the specific implementation, first, a pre-cleaning step is performed: an etching method is used to perform ion cleaning on the ceramic grinding disk substrate. This step can fully remove the residue on the surface of the ceramic grinding disk substrate, so that the metal film plated in the next step can be well attached to the surface of the ceramic grinding disk substrate; then, a Ti layer plating step is performed: a medium-frequency sputtering coating method is used to deposit a Ti (titanium) layer on the surface of the cleaned ceramic grinding disk substrate; then, a composite layer plating step is performed: a magnetron sputtering ion plating method is used to deposit a composite layer on the surface of the Ti layer, and the composite layer is composed of Ti and DLC (Diamond-like Carbon), that is, the composite layer is a Ti / DCL layer; finally, a DLC layer plating step is performed: a magnetron sputtering ion plating method is used to deposit a DCL layer on the surface of the composite layer.

[0036] Combination Figure 2 The figure is a schematic diagram of the structure of a preferred embodiment of a ceramic grinding disk provided by the present invention. By adopting the embodiment of the present invention to coat the surface of the grinding disk, the corresponding ceramic grinding disk is composed of a ceramic grinding disk substrate, a Ti layer, a Ti / DCL layer and a DCL layer, and the Ti layer is on the surface of the ceramic grinding disk substrate, the Ti / DCL layer is on the surface of the Ti layer, and the DCL layer is on the surface of the Ti / DCL layer.

[0037] It should be noted that the thermal conductivity of conventional metals is: aluminum: 237 W / mK, tin: 67 W / mK, titanium: 15.24 W / mK, and the DCL layer in the embodiment of the present invention has a thermal conductivity of 1000 W / mK. Therefore, the ceramic grinding disk obtained by the embodiment of the present invention has a good thermal conductivity effect. When it is used to grind a semiconductor, it will not affect the working performance of the internal coil of the ground semiconductor, and the heat and cold on the surface of the ceramic grinding disk are balanced, thereby improving the grinding effect.

[0038] In another preferred embodiment, the ion cleaning treatment of the ceramic grinding disk substrate by the etching method specifically includes:

[0039] Place the ceramic grinding disc substrate in the reaction chamber of the etcher and start the vacuum pump;

[0040] When the vacuum degree in the reaction chamber is 4 Pa, argon gas with a flow rate of 800-900 sccm and oxygen gas with a flow rate of 150-200 sccm are introduced into the reaction chamber, and the vacuum degree is adjusted to be maintained at 3-4 Pa;

[0041] The ceramic grinding disc substrate is subjected to radio frequency glow treatment, wherein the cathode frequency of the radio frequency is 60 to 120 kHz, and the anode frequency of the radio frequency is 30 to 35 kHz.

[0042] As a preferred solution, the duration of the radio frequency glow is 25 seconds, and the temperature in the reaction chamber is 60-65°C.

[0043] Specifically, in combination with the above embodiments, when the pre-cleaning step is actually performed, the ceramic grinding disk substrate can be first placed in the reaction chamber of the etcher, and then the vacuum pump is turned on to evacuate the reaction chamber. When the vacuum degree in the reaction chamber reaches 4Pa, argon and oxygen are introduced into the reaction chamber, and the vacuum degree in the reaction chamber is adjusted to continue to be maintained at 3Pa~4Pa. Then, the ceramic grinding disk substrate in the reaction chamber is subjected to a radio frequency glow, and the surface of the ceramic grinding disk substrate is ion cleaned using the plasma generated by the gas glow discharge; wherein the flow rate of argon introduced into the reaction chamber is 800sccm~900sccm, the flow rate of oxygen is 150sccm~200sccm, the frequency of radio frequency during radio frequency glow is: cathode: 60kHz~120kHz, anode: 30kHz~35kHz, the time of radio frequency glow is 25s, and the temperature in the reaction chamber is 60℃~65℃.

[0044] Exemplarily, the flow rate of argon gas can be 800sccm, 810sccm, 820sccm, 830sccm, 840sccm, 850sccm, 860sccm, 870sccm, 880sccm, 890sccm or 900sccm, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0045] Exemplarily, the flow rate of oxygen may be 150 sccm, 160 sccm, 170 sccm, 180 sccm, 190 sccm or 200 sccm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0046] Exemplarily, the cathode frequency of the radio frequency may be 60 kHz, 70 kHz, 80 kHz, 90 kHz, 100 kHz, 110 kHz or 120 kHz, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0047] Exemplarily, the value of the radio frequency anode frequency may be 30 kHz, 31 kHz, 32 kHz, 33 kHz, 34 kHz or 35 kHz, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0048] Exemplarily, the temperature in the reaction chamber may be 60° C., 61° C., 62° C., 63° C., 64° C. or 65° C., and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0049] In another preferred embodiment, the method of depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating specifically includes:

[0050] Argon gas with a flow rate of 800 sccm and oxygen gas with a flow rate of 50-100 sccm are introduced into the reaction chamber, and the medium-frequency sputtering power supply of the Ti target is turned on. A Ti layer is deposited on the surface of the ceramic grinding disk substrate at a sputtering pressure of 0.01 Pa and a sputtering power of 500-700 W; wherein the deposition temperature of the Ti layer is 80°C and the deposition time is 150 min.

[0051] Specifically, in combination with the above embodiment, when the Ti layer plating step is actually performed, argon and oxygen can be introduced into the reaction chamber at a flow rate of 800 sccm of argon and 50 sccm to 100 sccm of oxygen, and the inflation can be kept stable. Then, the medium frequency sputtering power supply of the Ti target is turned on for sputtering. The Ti layer is deposited on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating at a sputtering pressure of 0.01 Pa and a sputtering power of 500 W to 700 W; wherein the deposition temperature of the Ti layer is 80°C and the deposition time is 150 min.

[0052] Exemplarily, the flow rate of oxygen may be 50 sccm, 60 sccm, 70 sccm, 80 sccm, 90 sccm or 100 sccm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0053] Exemplarily, the sputtering power can be 500W, 510W, 520W, 530W, 540W, 550W, 560W, 570W, 580W, 590W, 600W, 610W, 620W, 630W, 640W, 650W, 660W, 670W, 680W, 690W or 700W, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0054] As a preferred solution, the thickness of the Ti layer is 13-15 μm.

[0055] Specifically, in combination with the above embodiment, the thickness of the Ti layer deposited on the surface of the ceramic grinding disk substrate is 13 μm to 15 μm.

[0056] Exemplarily, the thickness of the Ti layer may be 13 μm, 14 μm or 15 μm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0057] In another preferred embodiment, the method of depositing the composite layer on the surface of the Ti layer by magnetron sputtering ion plating specifically includes:

[0058] The vacuum degree in the reaction chamber was adjusted to 1.2×10 -3 Pa, introducing argon into the reaction chamber and adjusting the vacuum degree to maintain at 0.5 Pa;

[0059] Turn on the sputtering power of the Ti target and the C target, and deposit a composite layer on the surface of the Ti layer; wherein the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, and the deposition time is 100 to 120min.

[0060] Specifically, in combination with the above embodiment, when the composite layer plating step is actually performed, the vacuum degree in the reaction chamber can be adjusted to 1.2×10 -3 Pa or above, argon is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is controlled at 0.5Pa, and then the sputtering power supplies of the Ti target and the C target are turned on for co-sputtering, and magnetron sputtering ion plating is used to deposit the composite layer on the surface of the Ti layer; wherein the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, and the deposition temperature of the composite layer is 80°C, and the deposition time is 100min to 120min.

[0061] Exemplarily, the deposition time of the composite layer can be 100 minutes, 101 minutes, 102 minutes, 103 minutes, 104 minutes, 105 minutes, 106 minutes, 107 minutes, 108 minutes, 109 minutes, 110 minutes, 111 minutes, 112 minutes, 113 minutes, 114 minutes, 115 minutes, 116 minutes, 117 minutes, 118 minutes, 119 minutes or 120 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0062] As a preferred solution, the thickness of the composite layer is 10-15 μm.

[0063] Specifically, in combination with the above embodiment, the thickness of the composite layer deposited on the surface of the Ti layer is 10 μm to 15 μm.

[0064] Exemplarily, the thickness of the composite layer may be 10 μm, 11 μm, 12 μm, 13 μm, 14 μm or 15 μm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0065] In another preferred embodiment, the method of depositing the DCL layer on the surface of the composite layer by magnetron sputtering ion plating specifically includes:

[0066] Introduce methane into the reaction chamber and adjust the pressure of the argon environment to 0.1-0.5 Pa;

[0067] Turn on the sputtering power of the C target material, and deposit a DCL layer on the surface of the composite layer; wherein the deposition temperature of the DCL layer is 80-90° C., and the deposition time is 150-200 min.

[0068] Specifically, in combination with the above embodiment, when actually performing the DCL layer plating step, methane CH4 can be first introduced into the reaction chamber, and the pressure of the argon environment in the reaction chamber is adjusted to 0.1Pa~0.5Pa; then, the sputtering power supply of the C target is turned on for sputtering (at this time, only the C target is retained as a carbon source), and the DCL layer is deposited on the surface of the composite layer by magnetron sputtering ion plating; wherein, the deposition temperature of the DCL layer is 80°C~90°C, and the deposition time is 150min~200min.

[0069] Exemplarily, the deposition temperature of the DCL layer may be 80° C., 81° C., 82° C., 83° C., 84° C., 85° C., 86° C., 87° C., 88° C., 89° C. or 90° C., and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0070] Exemplarily, the deposition time of the DCL layer may be 150 minutes, 160 minutes, 170 minutes, 180 minutes, 190 minutes or 200 minutes, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0071] As a preferred solution, the thickness of the DCL layer is 15-30 μm.

[0072] Specifically, in combination with the above embodiment, the thickness of the DCL layer deposited on the surface of the composite layer is 15 μm to 30 μm.

[0073] Exemplarily, the thickness of the DCL layer can be 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, 26 μm, 27 μm, 28 μm, 29 μm or 30 μm, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0074] In combination with all the above embodiments, the implementation process of the present scheme is described below through the first specific embodiment, including: (1) pre-cleaning step: placing the ceramic grinding disk substrate in the reaction chamber of the etcher, turning on the vacuum pump to evacuate the reaction chamber, when the vacuum degree in the reaction chamber reaches 4Pa, introducing argon gas with a flow rate of 800sccm and oxygen gas with a flow rate of 150sccm into the reaction chamber, and adjusting the vacuum degree to maintain at 3Pa, performing a radio frequency glow on the ceramic grinding disk substrate, and using the plasma generated by the gas glow discharge to perform ion cleaning on the surface of the ceramic grinding disk substrate; wherein the cathode frequency of the radio frequency is 60kHz, and the anode frequency of the radio frequency is 100kHz. The frequency is 30kHz, the RF glow time is 25s, and the temperature in the reaction chamber is 60°C; (2) Ti layer coating step: introduce argon gas with a flow rate of 800sccm and oxygen gas with a flow rate of 50sccm into the reaction chamber, keep the gas filling stable, turn on the medium frequency sputtering power supply of the Ti target for sputtering, and use medium frequency sputtering coating to deposit a Ti layer on the surface of the ceramic grinding disk substrate at a sputtering pressure of 0.01Pa and a sputtering power of 500W; wherein the deposition temperature of the Ti layer is 80°C, the deposition time is 150min, and the thickness of the Ti layer is 13μm; (3) Composite layer coating step: adjust the vacuum degree in the reaction chamber to 1.2×10 -3 Pa or more, introduce argon into the reaction chamber, and adjust the vacuum degree to maintain at 0.5Pa, turn on the sputtering power of the Ti target and the C target for co-sputtering, and use magnetron sputtering ion plating to deposit a composite layer on the surface of the Ti layer; wherein, the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, the deposition time is 100min, and the thickness of the composite layer is 10μm; (4) DLC layer plating step: introduce methane into the reaction chamber, and adjust the pressure of the argon environment in the reaction chamber to 0.1Pa, turn on the sputtering power of the C target for sputtering, and use magnetron sputtering ion plating to deposit a DCL layer on the surface of the composite layer; wherein, the deposition temperature of the DCL layer is 80°C, the deposition time is 150min, and the thickness of the DCL layer is 15μm.

[0075] In combination with all the above embodiments, the implementation process of the present scheme is described below through a second specific embodiment, including: (1) pre-cleaning step: placing the ceramic grinding disk substrate in the reaction chamber of the etcher, turning on the vacuum pump to evacuate the reaction chamber, when the vacuum degree in the reaction chamber reaches 4Pa, introducing argon gas with a flow rate of 850sccm and oxygen gas with a flow rate of 175sccm into the reaction chamber, and adjusting the vacuum degree to maintain at 3.5Pa, performing a radio frequency glow on the ceramic grinding disk substrate, and using the plasma generated by the gas glow discharge to perform ion cleaning on the surface of the ceramic grinding disk substrate; wherein the cathode frequency of the radio frequency is 90kHz, and the anode frequency of the radio frequency is 120kHz. The frequency is 32kHz, the RF glow time is 25s, and the temperature in the reaction chamber is 63°C; (2) Ti layer coating step: argon gas with a flow rate of 800sccm and oxygen gas with a flow rate of 75sccm are introduced into the reaction chamber to keep the gas filling stable, and the medium frequency sputtering power supply of the Ti target is turned on for sputtering. The Ti layer is deposited on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating at a sputtering pressure of 0.01Pa and a sputtering power of 600W; wherein the deposition temperature of the Ti layer is 80°C, the deposition time is 150min, and the thickness of the Ti layer is 14μm; (3) Composite layer coating step: the vacuum degree in the reaction chamber is adjusted to 1.2×10 -3 Pa or more, introduce argon into the reaction chamber, and adjust the vacuum degree to maintain at 0.5Pa, turn on the sputtering power of the Ti target and the C target for co-sputtering, and use magnetron sputtering ion plating to deposit a composite layer on the surface of the Ti layer; wherein, the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, the deposition time is 110min, and the thickness of the composite layer is 12μm; (4) DLC layer plating step: introduce methane into the reaction chamber, and adjust the pressure of the argon environment in the reaction chamber to 0.3Pa, turn on the sputtering power of the C target for sputtering, and use magnetron sputtering ion plating to deposit a DCL layer on the surface of the composite layer; wherein, the deposition temperature of the DCL layer is 85°C, the deposition time is 175min, and the thickness of the DCL layer is 22μm.

[0076] In combination with all the above embodiments, the implementation process of the present scheme is described below through the third specific embodiment, including: (1) pre-cleaning step: placing the ceramic grinding disk substrate in the reaction chamber of the etcher, turning on the vacuum pump to evacuate the reaction chamber, when the vacuum degree in the reaction chamber reaches 4Pa, introducing argon gas with a flow rate of 900sccm and oxygen gas with a flow rate of 200sccm into the reaction chamber, and adjusting the vacuum degree to maintain at 4Pa, performing a radio frequency glow on the ceramic grinding disk substrate, and using the plasma generated by the gas glow discharge to perform ion cleaning on the surface of the ceramic grinding disk substrate; wherein the cathode frequency of the radio frequency is 120kHz, and the anode frequency of the radio frequency is 120kHz. The frequency is 35kHz, the RF glow time is 25s, and the temperature in the reaction chamber is 65°C; (2) Ti layer coating step: introduce argon gas with a flow rate of 800sccm and oxygen gas with a flow rate of 100sccm into the reaction chamber, keep the gas filling stable, turn on the medium frequency sputtering power supply of the Ti target for sputtering, and use medium frequency sputtering coating to deposit a Ti layer on the surface of the ceramic grinding disk substrate at a sputtering pressure of 0.01Pa and a sputtering power of 700W; wherein the deposition temperature of the Ti layer is 80°C, the deposition time is 150min, and the thickness of the Ti layer is 15μm; (3) Composite layer coating step: adjust the vacuum degree in the reaction chamber to 1.2×10 -3 Pa or more, introduce argon into the reaction chamber, and adjust the vacuum degree to maintain at 0.5Pa, turn on the sputtering power of the Ti target and the C target for co-sputtering, and use magnetron sputtering ion plating to deposit a composite layer on the surface of the Ti layer; wherein, the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, the deposition time is 120min, and the thickness of the composite layer is 15μm; (4) DLC layer plating step: introduce methane into the reaction chamber, and adjust the pressure of the argon environment in the reaction chamber to 0.5Pa, turn on the sputtering power of the C target for sputtering, and use magnetron sputtering ion plating to deposit a DCL layer on the surface of the composite layer; wherein, the deposition temperature of the DCL layer is 90°C, the deposition time is 200min, and the thickness of the DCL layer is 30μm.

[0077] In summary, the coating method for the surface of a grinding disk provided by the embodiment of the present invention is, first, an etching method is used to perform ion cleaning on the ceramic grinding disk substrate; then, a Ti layer is deposited on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating; then, a composite layer is deposited on the surface of the Ti layer by magnetron sputtering ion plating, wherein the composite layer is composed of Ti and DLC; finally, a DCL layer is deposited on the surface of the composite layer by magnetron sputtering ion plating. The embodiment of the present invention can solve the above problems by coating the surface of the ceramic grinding disk, which will neither affect the working performance of the internal coil of the semiconductor being ground nor cause hot and cold imbalance on the surface of the grinding disk, thereby improving the grinding effect.

[0078] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A coating method for the surface of a grinding disc, characterized in that: include: The ceramic grinding disc substrate is ion cleaned by etching method; Depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating; Depositing a composite layer on the surface of the Ti layer by magnetron sputtering ion plating; wherein the composite layer consists of Ti and DLC; The DCL layer is deposited on the surface of the composite layer by magnetron sputtering ion plating.

2. The coating method for the surface of a grinding disc as claimed in claim 1, characterized in that: The ion cleaning treatment of the ceramic grinding disc substrate by using an etching method specifically includes: Place the ceramic grinding disc substrate in the reaction chamber of the etcher and start the vacuum pump; When the vacuum degree in the reaction chamber is 4 Pa, argon gas with a flow rate of 800-900 sccm and oxygen gas with a flow rate of 150-200 sccm are introduced into the reaction chamber, and the vacuum degree is adjusted to be maintained at 3-4 Pa; The ceramic grinding disc substrate is subjected to radio frequency glow treatment, wherein the cathode frequency of the radio frequency is 60 to 120 kHz, and the anode frequency of the radio frequency is 30 to 35 kHz.

3. The coating method for the surface of a grinding disc as claimed in claim 2, characterized in that: The radio frequency glow time is 25 seconds, and the temperature in the reaction chamber is 60-65°C.

4. The coating method for the surface of a grinding disc as claimed in claim 1, characterized in that: The method of depositing a Ti layer on the surface of the ceramic grinding disk substrate by medium frequency sputtering coating specifically includes: Argon gas with a flow rate of 800 sccm and oxygen gas with a flow rate of 50-100 sccm are introduced into the reaction chamber, and the medium-frequency sputtering power supply of the Ti target is turned on. A Ti layer is deposited on the surface of the ceramic grinding disk substrate at a sputtering pressure of 0.01 Pa and a sputtering power of 500-700 W; wherein the deposition temperature of the Ti layer is 80°C and the deposition time is 150 min.

5. The method for coating the surface of a grinding disc as claimed in claim 4, characterized in that: The thickness of the Ti layer is 13-15 μm.

6. The coating method for the surface of a grinding disc as claimed in claim 1, characterized in that: The method of depositing the composite layer on the surface of the Ti layer by magnetron sputtering ion plating specifically includes: The vacuum degree in the reaction chamber was adjusted to 1.2×10 -3 Pa, introducing argon into the reaction chamber and adjusting the vacuum degree to maintain at 0.5 Pa; Turn on the sputtering power of the Ti target and the C target, and deposit a composite layer on the surface of the Ti layer; wherein the current of the Ti target is 1.0A, the current of the C target is 1.5A, the applied bias is -150V, the bias frequency is 120kHz, the deposition temperature of the composite layer is 80°C, and the deposition time is 100 to 120min.

7. The method for coating the surface of a grinding disc as claimed in claim 6, characterized in that: The thickness of the composite layer is 10-15 μm.

8. The method for coating the surface of a grinding disc as claimed in claim 1, characterized in that: The method of depositing the DCL layer on the surface of the composite layer by magnetron sputtering ion plating specifically includes: Introduce methane into the reaction chamber and adjust the pressure of the argon environment to 0.1-0.5 Pa; Turn on the sputtering power of the C target material, and deposit a DCL layer on the surface of the composite layer; wherein the deposition temperature of the DCL layer is 80-90° C., and the deposition time is 150-200 min.

9. The method for coating the surface of a grinding disc as claimed in claim 8, characterized in that: The thickness of the DCL layer is 15-30 μm.

Images