Photoelectric memory based on organic polymer and fluorinated perovskite material and preparation method thereof
By using a combination technology of organic polymers and fluorinated perovskite materials in optoelectronic memory, the carrier mobility and storage stability problems are solved, and efficient data storage and long-term maintenance are achieved.
CN120152486APending Publication Date: 2025-06-13UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information
- Application Number
- CN202510222154.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-27
- Publication Date
- 2025-06-13
AI Technical Summary
Technical Problem
The existing airport effect transistor memory has a fine balance problem in carrier mobility and storage stability, with short data storage time and difficult industrial cost control.
Method used
Using an optoelectronic memory based on organic polymers and fluorinated perovskite materials, an efficient active layer is formed by combining P-type and N-type organic polymers with fluorinated perovskite materials to achieve carrier capture and data storage.
Benefits of technology
A high switching current ratio and long data retention time are achieved, improving the electrical and time retention performance of the memory.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a photoelectric memory based on an organic polymer and a fluorinated perovskite material and a preparation method, the photoelectric memory is based on a bottom gate bottom contact field effect transistor structure, the memory comprises a gate layer, a dielectric layer, a source and drain layer and an active layer from bottom to top, the gate layer is made of silicon, the dielectric layer is made of silicon dioxide, and the active layer is made of silicon oxide. The source electrode and the drain electrode are made of gold, and the active layer is selected from one or more of PDVT-10, P (NDI2OD-T2) and a perovskite material which is subjected to surface ligand engineering treatment, namely fluoridation. The organic polymer with good electrical performance and the perovskite material with good optical performance are selected to be combined, so that the photoelectric memory shows good electrical performance and good time retention performance, and a high current ratio and high data retention capacity can be achieved.
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