Preparation method and application of Rb2CuBr3 single crystal and wafer

By optimizing the preparation of Rb2CuBr3 single crystals through the same-composition seed crystal induced cooling method and hot pressing process, the problem of insufficient crystal size and quality in the preparation of copper-based halides has been solved, realizing efficient large-size, high-performance Rb2CuBr3 crystals suitable for high-sensitivity ultraviolet photoelectric detection and X-ray detection.

CN120889012APending Publication Date: 2025-11-04CHONGQING UNIV
2 Cites 0 Cited by

Patent Information

Application Number
CN202511066392.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-31
Publication Date
2025-11-04

AI Technical Summary

Technical Problem

Existing methods for preparing copper-based halides suffer from problems such as small crystal size, poor crystal quality, presence of toxic organic ligands, high equipment costs, and low photoluminescence quantum yield, making it difficult to meet the high sensitivity requirements of X-ray detection and ultraviolet photoelectric detection.

Method used

By employing a seed crystal-induced cooling method combined with hot pressing, and optimizing the raw material ratio and solvent dosage, Rb2CuBr3 single crystals are prepared through seed crystal-guided directional growth, avoiding polycrystalline or defective structures. Inch-scale Rb2CuBr3 wafers are then prepared by hot pressing, thereby improving crystal quality and photoelectric performance.

Benefits of technology

Large-size, high-quality Rb2CuBr3 crystals have been achieved, with significantly improved photoelectric properties. The ultraviolet responsivity and X-ray detection performance have broken through the limits of traditional methods, meeting the application requirements of high-sensitivity detection devices.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention belongs to the field of inorganic crystal materials, and particularly relates to a preparation method and application of an Rb2CuBr3 single crystal and a wafer. According to the preparation method of the Rb2CuBr3 single crystal, the raw material ratio and the solvent dosage are optimized, and a cooling method induced by a same-component seed crystal is adopted for growth, so that ions seamlessly and epitaxially grow along a seed crystal structure, polycrystals or defects are avoided, solute is more easily and directionally deposited on the surface of the seed crystal, and the crystal quality is improved. The Rb2CuBr3 wafer with the inch-level size is prepared by further combining with a hot pressing process, the nano / micron-level limitation of a traditional process is broken through, size rising from a rod-shaped single crystal to a large-area wafer is achieved, and the crystal growth efficiency and size uniformity are remarkably improved. The photoelectric property of the Rb2CuBr3 wafer is remarkably improved, the luminous quantum yield reaches 96.84%, the exciton lifetime is 69.01 microseconds, the ultraviolet responsivity reaches 177.4 mA / W, the specific detection rate is improved to 1.9 * 10 < 13 > Jones, the large-area application requirement of a high-sensitivity detection device is met, and the application of the Rb2CuBr3 wafer in the fields of ultraviolet photoelectric detection and X-ray detection is expanded.
Need to check novelty before this filing date? Find Prior Art