Selectable boost circuit applied to intelligent low-side switch chip

By using a selectable boost circuit with an intelligent low-side switching chip, and by using a comparator and charge pump unit to detect and adjust the input voltage, the internal resistance of the power transistor is kept stable under different voltages. This solves the problem of inconsistent internal resistance of the power transistor and improves system efficiency and reliability.

CN121508511APending Publication Date: 2026-02-10SHAANXI REACTOR MICROELECTRONICS
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Patent Information

Application Number
CN202511561044.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-29
Publication Date
2026-02-10

AI Technical Summary

Technical Problem

The internal resistance of the power transistor in the intelligent low-side switching chip is inconsistent under different input voltages, resulting in large switching losses, which affects system efficiency and reliability, and lacks an effective voltage regulation mechanism.

Method used

A selectable boost circuit is adopted, including a voltage multiplier module. The input voltage is detected by the first and second comparator units, and the target voltage multiplier module is boosted by the charge pump unit. The target voltage multiplier module is generated at the output terminal, and the output terminal is connected to the voltage change rate control module to ensure that the internal resistance of the power transistor is less than a preset threshold.

Benefits of technology

Maintaining low internal resistance of the power transistor under different input voltages significantly reduces switching losses, improves chip efficiency and reliability, enhances adaptability to various input voltage scenarios, reduces energy consumption, and extends equipment lifespan.

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Abstract

The invention provides a selectable boost circuit applied to an intelligent low-side switch chip, the intelligent low-side switch chip comprises a pin IN, a power tube and a voltage change rate control module respectively connected with the pin IN and the power tube, and the selectable boost circuit comprises a selectable voltage multiplication module which is provided with an input end and an output end, the input end is connected to a pin IN of the intelligent low-side switch chip, and the output end is connected to the voltage change rate control module; and the selectable voltage multiplication module is used for detecting an input voltage value of the pin IN, performing boost control based on the input voltage value to obtain a target voltage, and outputting the target voltage to the power tube so as to enable the internal resistance of the power tube to be smaller than a preset threshold value, thereby remarkably reducing the switching loss and improving the efficiency and reliability of the intelligent low-side switching chip.
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