Method for preparing high-purity silicon tetrafluoride by dissociating fluosilicate through low-temperature plasma

Silicon tetrafluoride is prepared by dissociating fluorosilicates using low-temperature plasma. This method, which utilizes a plasma field and an inert carrier gas, solves the problems of high temperature, high energy consumption, and equipment corrosion in existing technologies, and achieves efficient and low-cost silicon tetrafluoride preparation, making it suitable for industrial applications.

CN121948461APending Publication Date: 2026-05-01PERIC SPECIAL GASES CO LTD
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Patent Information

Application Number
CN202610096058.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-23
Publication Date
2026-05-01

AI Technical Summary

Technical Problem

Existing methods for preparing silicon tetrafluoride suffer from problems such as high production costs, high energy consumption, easy equipment corrosion, low conversion rate, and large amounts of waste residue and wastewater generated, making them unsuitable for industrial production.

Method used

A method for dissociating fluorosilicates using low-temperature plasma involves selectively dissociating the molecular bonds of fluorosilicates by bombarding them with high-energy electrons in a non-equilibrium plasma field, generating silicon tetrafluoride and metal fluorides. Purification is then carried out using an inert carrier gas and a reactor made of fluorine-resistant materials, combined with a primary condenser and a molecular sieve adsorption tower.

Benefits of technology

It achieves efficient conversion of fluorosilicate to silicon tetrafluoride at low temperatures, reducing energy consumption, minimizing equipment corrosion, simplifying the process, increasing conversion rate, reducing waste generation, lowering production costs, and making it suitable for industrial production.

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Abstract

The invention relates to a method for preparing high-purity silicon tetrafluoride by dissociating fluosilicate through low-temperature plasma. The method comprises the following steps: crushing fluosilicate in a crusher, and heating and dewatering in a vibrated fluidized bed; the treated fluosilicate powder is conveyed to a plasma reactor through carrier gas to be dissociated to generate silicon tetrafluoride; and finally, silicon tetrafluoride generated by reaction enters a first-stage condenser to separate solid metal fluoride, then enters a cold hydrazine to be cooled for first-stage impurity removal, and then enters an adsorption tower for second-stage impurity removal, so that high-purity silicon tetrafluoride is obtained. The fluosilicate is dissociated by adopting a low-temperature plasma technology, so that high-purity silicon tetrafluoride is efficiently prepared under a low-temperature condition; meanwhile, the one-step method is short in conversion process, fluorine-containing waste is not generated, a simple purification step is combined, the production cost and the environment-friendly burden are reduced, the raw material adaptability is high, and operation is easy.
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