Method and apparatus for monitoring cleaning procedures of a chamber

Abstract

The chamber cleaning process monitoring method of the present application provides: a high-frequency power supply step, in response to starting the seasoning process after the cleaning process in the chamber is completed, a high-frequency power supply is supplied to the inside of the chamber; an impedance matching step, the frequency of the high-frequency power supply is adjusted to achieve impedance matching in the inside of the chamber; a chamber abnormality judgment step, whether the adjusted frequency deviates from the first frequency band is judged to judge whether an abnormality occurs in the inside of the chamber; and a warning output step, a warning reminder caused by the abnormality in the inside of the chamber is output, thereby unnecessary reprocessing can be reduced, process time can be predicted, and production planning can be effectively established.

Description

Technical Field

[0001] The present invention relates to a method and apparatus for monitoring the cleaning process of a chamber, and more specifically, to a method and apparatus for monitoring the status of a previously performed cleaning process in real time by using a regulated frequency value to achieve impedance matching inside the chamber during the aging process. Background Technology

[0002] In semiconductor manufacturing processes, plasma-enhanced chemical vapor deposition (PECVD) equipment plays a very important role. The process mainly consists of three steps: deposition, cleaning, and seasoning, and this process is repeated.

[0003] The cleaning process is a necessary step to remove impurities from the chamber to ensure the quality of the next deposition process. Because the cleaning process is performed without a wafer, it is easily assumed to be insensitive or easy to control, but this is not actually the case. Without a wafer, it is difficult to immediately determine whether the process is proceeding correctly. Furthermore, if cleaning is not thorough, byproducts remaining inside the chamber can fall onto the wafer during the process, generating a large number of particles. Moreover, over-cleaning can cause chamber damage due to the accumulated cleaning gases, resulting in chamber particles such as Al compounds.

[0004] Traditionally, chamber conditions and cleanliness status have been diagnosed by using impedance monitoring via a matching network. However, this method requires the generation of direct plasma into the chamber, which shortens chamber lifetime. Recently, to extend chamber lifetime, remote plasma systems (RPS) have gained attention for generating remote plasma for cleaning. However, RPS lacks the power to be transmitted to the matching network, thus limiting the availability of impedance information.

[0005] To address the problems of existing technologies, there is a growing need for new diagnostic methods that can effectively diagnose the condition of cleaning processes without shortening the lifespan of the chamber.

[0006] Prior art refers to technical information that the inventor possesses in order to derive this invention, or that is obtained in the process of deriving this invention, and is not necessarily publicly known technology that was disclosed to the general public before the application for this invention.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Korean Patent Publication No. 10-2004-0035417 (published on April 29, 2004)

[0010] Patent Document 2: Korean Patent Publication No. 10-2007-0070752 (published on July 4, 2007) Summary of the Invention

[0011] The problem to be solved

[0012] In addressing the aforementioned problems, the present invention aims to provide a method and apparatus for real-time diagnosis of the chamber status during the aging process following the cleaning process, thereby monitoring abnormal operation of the cleaning process and providing warnings before the deposition process, the main process, begins, thus preventing additional problems from occurring.

[0013] The problems to be solved by the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand from the following description other problems not mentioned.

[0014] Solution to the problem

[0015] The chamber cleaning process monitoring method of the present invention may include: a high-frequency power supply step, which supplies high-frequency power to the interior of the chamber after the cleaning process is completed and the seasoning process is started; an impedance matching step, which adjusts the frequency of the high-frequency power supply to achieve impedance matching inside the chamber; a chamber anomaly judgment step, which determines whether the adjusted frequency deviates from a first frequency band to determine whether an anomaly has occurred inside the chamber; and a warning output step, which outputs a warning reminder caused by the anomaly occurring inside the chamber.

[0016] According to one embodiment, the first frequency band is a frequency band corresponding to the impedance that determines the interior of the chamber is in a normal state suitable for performing the deposition process.

[0017] According to one embodiment, in the chamber anomaly judgment step, if the adjusted frequency is detected in a second frequency band higher than the first frequency band, it can be determined that an abnormal state has occurred in the cleaning process of the chamber.

[0018] According to one embodiment, in the warning output step, if the adjusted frequency is detected in the second-first frequency band, a warning reminder indicating an abnormal state of the cleaning process can be output without interrupting the aging process. If the adjusted frequency is detected in the second-second frequency band, the aging process can be interrupted, and a warning reminder indicating an abnormal state of the cleaning process can be output.

[0019] According to one embodiment, the second-second frequency band, which is a frequency band higher than the second-first frequency band, can be a value determined experimentally by impedance monitoring inside the cavity.

[0020] According to one embodiment, the cleaning process instruction step may further include instructing the cleaning process to be repeated when the adjusted frequency is detected in the second-second frequency band.

[0021] According to one embodiment, in the chamber abnormality judgment step, if the adjusted frequency is detected in a third frequency band lower than the first frequency band, it can be determined that an abnormal state has occurred in the aging process of the chamber.

[0022] According to one embodiment, in the warning output step, if the adjusted frequency is detected in the third-first frequency band, a warning reminder indicating an abnormal state of the aging process can be output without interrupting the aging process. If the adjusted frequency is detected in the third-second frequency band, the aging process can be interrupted, and a warning reminder indicating an abnormal state of the aging process can be output.

[0023] According to one embodiment, the third-second frequency band, being a frequency band lower than the third-first frequency band, may include values ​​determined experimentally by impedance monitoring inside the cavity.

[0024] According to one embodiment, it may further include: when the adjusted frequency is detected in the third-second frequency band, instructing the aging process instruction step to repeat the aging process.

[0025] According to one embodiment, the warning may include resolution information that can normalize the interior of the chamber based on the frequency band of the adjusted frequency detected.

[0026] According to one embodiment, the warning notification can be transmitted via a network to at least one of an external terminal and an external server.

[0027] According to one embodiment, the process may further include setting the frequency of the high-frequency power supplied to the interior of the chamber to 13.56 MHz after the aging process has been completed normally.

[0028] A chamber cleaning process monitoring device according to an embodiment of the present invention may include: a memory for storing at least one instruction; and one or more processors connected to the memory for controlling the chamber cleaning process monitoring device. The one or more processors may execute at least one instruction to supply high-frequency power to the interior of the chamber in response to the start of an aging process after the cleaning process is completed in the chamber, adjust the frequency of the high-frequency power supply to achieve impedance matching inside the chamber, determine whether the adjusted frequency deviates from a first frequency band, determine whether an abnormality has occurred inside the chamber, and output a warning reminder caused by the abnormality inside the chamber for control.

[0029] The effects of the invention

[0030] As described above, the method and apparatus for monitoring the cleaning process of the chamber according to the present invention can detect contamination or defects that may occur in the cleaning process in real time and take preventive measures in advance, thereby reducing the defect rate that may occur in subsequent processes and ensuring the stability of the process.

[0031] Furthermore, the method and apparatus for monitoring the cleaning process of the chamber according to the present invention can accurately monitor the cleaning status to improve the completion of the deposition step, and can improve productivity by reducing the defect rate and shortening the process time. Thus, unnecessary reprocessing can be reduced, and process time can be predicted, thereby effectively establishing production plans.

[0032] Furthermore, the method and apparatus for monitoring the cleaning process of the chamber according to the present invention can detect and prevent abnormalities in the cleaning process in advance, thereby saving unnecessary equipment repair and replacement costs, and optimizing process variables based on real-time monitoring data, thus effectively implementing process management.

[0033] Meanwhile, the frequency bands that can determine the cleaning status are divided into 5 frequency bands to provide warnings and reminders when the cleaning status is unstable, even though it is within the range for proceeding to the next process. This allows the monitoring information to be communicated to the management personnel without interrupting the process. Furthermore, if the cleaning status fails and the next process cannot be carried out, the aging process is interrupted and a warning is provided, thereby maintaining the stable state of the chamber and reducing the defect rate.

[0034] The effects of the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand other effects not mentioned from the following description. Attached Figure Description

[0035] Figure 1 The figure illustrates the technical features of a cleaning process within a monitoring chamber according to an embodiment of the present invention.

[0036] Figure 2 This figure illustrates the structure of an apparatus for monitoring a cleaning process within a chamber according to an embodiment of the present invention.

[0037] Figure 3 This is a flowchart illustrating the process of a method for monitoring the cleaning process within a chamber according to an embodiment of the present invention.

[0038] Figure 4 This is a flowchart illustrating the technical features of real-time monitoring of the state of the cleaning and aging processes based on the frequency band detected in the aging process of an embodiment of the present invention.

[0039] Figure 5 A graph showing frequency bands divided based on experimental data to evaluate the completion of a cleaning process according to an embodiment of the present invention.

[0040] Figure 6 The diagram is for illustrative purposes only and is intended to briefly illustrate the features of transmitting warning alerts to external systems due to the failure of a cleaning process according to an embodiment of the present invention, as well as the features of transmitting warning alerts via a network.

[0041] (Explanation of reference numerals in the attached diagram)

[0042] 100: Monitoring device for chamber cleaning process 110: Storage device

[0043] 120: Processor; 130: Warning / Alert Output Unit

[0044] 140: Communications Department 20: Chamber

[0045] 30: RF Matcher; 40: RF Generator

[0046] 200: Network; 300: User Terminal

[0047] 400: External Server Detailed Implementation

[0048] In this invention, the accompanying drawings may be exaggerated to facilitate differentiation from, clarity of, and mastery of the prior art. Furthermore, the terminology used below is defined in consideration of the functionality within this invention and may vary depending on the intent or convention of the user or operator; therefore, these terms should be defined based on the technical content of the entire specification. On the other hand, the embodiments are merely exemplary examples of structural elements presented within the scope of this invention and do not limit the scope of the invention, which should be interpreted based on the technical concept presented in the entire specification.

[0049] In the full text of the specification, when a structure "includes" another structure, unless specifically opposed, it means that other structures may also be included, without excluding the remaining structures.

[0050] Furthermore, when one structure is "connected," "linked," or "combined" with another structure, it implies a situation of "direct connection," "direct linking," or "direct combination," and it can also mean "connected with other structures in between," "linked with other structures in between," or "combined with other structures in between." Conversely, when one structure is "directly connected," "directly linked," or "directly combined" with another structure, it should be understood that there are no other structures in between.

[0051] Furthermore, when directional terms such as “front,” “back,” “up,” “down,” “left,” “right,” “one end,” “the other end,” and “both ends” are used, they are used exemplarily in relation to the direction of the disclosed diagram and therefore cannot be interpreted restrictively. When terms such as “first” and “second” are used, they are terms used to distinguish the various structures and cannot be interpreted restrictively.

[0052] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well known to those skilled in the art to which the following embodiments pertain are omitted. Furthermore, detailed descriptions of portions of the figures unrelated to the description of the embodiments are omitted.

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0054] Figure 1 The figure is for illustrating the technical features of the cleaning process within the monitoring chamber according to an embodiment of the present invention. Figure 2 This figure illustrates the structure of a device for monitoring a cleaning process within a chamber according to an embodiment of the present invention. Figure 3 This is a flowchart illustrating the process of a method for monitoring the cleaning process within a chamber according to an embodiment of the present invention. Figure 4 This is a flowchart illustrating the technical features of real-time monitoring of the state of the cleaning and aging processes based on the frequency band detected in the aging process of an embodiment of the present invention. Figure 5 This is a graph showing the frequency bands divided based on experimental data to evaluate the completion of a cleaning process according to an embodiment of the present invention. Figure 6 The diagram is for illustrative purposes only and is intended to briefly illustrate the features of transmitting warning alerts to external systems due to the failure of a cleaning process according to an embodiment of the present invention, as well as the features of transmitting warning alerts via a network.

[0055] Reference Figures 1 to 3 The present invention will provide a detailed description of a method and apparatus for monitoring the cleaning process within a chamber according to an embodiment of the present invention.

[0056] According to one embodiment, the present invention provides a method and apparatus for real-time detection of anomalies occurring during the cleaning process of PECVD equipment, thereby preventing failures in the vapor deposition process, which is a key process, and extending equipment life. In particular, impedance changes occurring when a high-frequency power supply is supplied can be closely observed to diagnose the condition inside the chamber, thereby contributing to increased productivity and reduced defect rates in the Plasma Enhanced Chemical Vapor Deposition (PECVD) process.

[0057] According to one embodiment, plasma-enhanced chemical vapor deposition (PECVD) is a technique that uses plasma to deposit thin films on a substrate. It is widely used in various fields such as semiconductors and displays, and the PECVD chamber generally consists of three main processes—deposition, cleaning, and aging—that are continuously performed in a cycle.

[0058] Deposition process

[0059] According to one embodiment, the deposition process involves creating a plasma state from a reactive gas introduced into a chamber and depositing a thin film of the desired material onto a substrate. The deposition process controls the thickness, density, and composition of the film by adjusting the deposition conditions (pressure, temperature, plasma power, etc.) to optimize the characteristics of the device and form a thin film with multiple functions, such as an insulating film, conductive film, and passivation film, for semiconductor devices.

[0060] Cleaning process

[0061] According to one embodiment, the cleaning process is a process of removing contaminants (unreacted gases, byproducts, etc.) remaining inside the chamber during the deposition process, making the chamber clean. The cleaning process can maintain the cleanliness of the chamber, ensure the stability of the process, obtain a film of uniform quality, and prevent contaminants inside the chamber from affecting the next process and producing defective products.

[0062] Seasoning process

[0063] According to one embodiment, the aging process involves pre-depositing a thin film onto the walls inside the chamber to stabilize the interaction with the film to be deposited in the next process and to stabilize the state of the chamber. The aging process protects the chamber walls from corrosion, and the aging film formed during the process acts as a buffer, thereby improving the quality of the deposited film.

[0064] According to one embodiment, the deposition process is the core process for producing the final product by forming a thin film of the desired material. The cleaning process is performed before and after the deposition process to maintain chamber cleanliness and ensure process stability. The aging process is performed before the deposition process to stabilize the chamber state and improve film quality. Therefore, only when the cleaning and aging processes perform their respective functions can a high-quality film be obtained; thus, monitoring the cleaning and aging processes is crucial.

[0065] According to one embodiment, a chamber cleaning process monitoring device 100 includes: a memory 110 for storing at least one instruction; and one or more processors 120 connected to the memory 110 for controlling the chamber cleaning process monitoring device. The processors 120 execute at least one instruction to supply high-frequency power to the inside of the chamber 20 after the cleaning process is completed and the aging process begins. The high-frequency power is adjusted to achieve impedance matching inside the chamber 20, and the frequency of the high-frequency power is determined to determine whether the adjusted frequency deviates from the first frequency band to determine whether there is an abnormality inside the chamber 20. The device outputs a warning reminder caused by the abnormality inside the chamber 20 for control purposes.

[0066] According to one embodiment, the communication unit 140 may include one or more communication modules that connect the cleaning process monitoring device 100 of the chamber to the network 200, thereby enabling communication with the user terminal 300 or an external server 400, etc. For example, the communication modules may include mobile communication modules such as LTE and 5G, wireless communication modules such as Wi-Fi, and / or various other wired or wireless communication modules.

[0067] According to one embodiment, the warning and reminder output unit 130 provides information to users by generating outputs related to vision, hearing, or touch, and may include a display, speaker, vibration module, etc.

[0068] According to one embodiment, the input unit (not shown) is a structure for obtaining user input, images, audio and other information, and may include various mechanical / electronic input mechanisms, cameras, loudspeakers and other input mechanisms.

[0069] According to one embodiment, the one or more processors 120 can control the overall operation of the chamber cleaning process monitoring device 100. The one or more processors 120 can process signals, data, information, etc., input or output through the aforementioned structural elements, or provide specified information or functions according to various application programs or algorithms stored in the memory 110. For example, the one or more processors 120 can control the chamber cleaning process monitoring device 100 disclosed in this specification.

[0070] According to one embodiment, the more than one processor 120 may include at least one processor and / or at least one programmable circuit. For example, the processor 120 may be embodied in hardware such as a CPU, application processor (AP), MCU, GPU, NPU, integrated circuit, ASIC, FPGA, etc.

[0071] According to one embodiment, the memory 110 can store the programs and data required for the operation of the chamber cleaning process monitoring device 100. Furthermore, the memory 110 can store data generated or acquired by one or more processors 120. The memory 110 can be composed of a read-only memory (ROM), random access memory (RAM), flash memory, SSD, HDD, or a combination of such storage media.

[0072] According to one embodiment, the cleaning process monitoring method of the chamber 20 may include: a high-frequency power supply step S10, which supplies high-frequency power to the interior of the chamber 20 after the cleaning process is completed and the seasoning process is started; an impedance matching step S20, which adjusts the frequency of the high-frequency power supply to achieve impedance matching inside the chamber; a chamber anomaly judgment step S30, which determines whether the adjusted frequency deviates from the first frequency band to determine whether an anomaly has occurred inside the chamber; and a warning output step S40, which outputs a warning reminder caused by the anomaly occurring inside the chamber.

[0073] According to one embodiment, the cleaning process monitoring device 100 uses a radio frequency generator 40 and a radio frequency matching device 30, which are typically used in the aging process, to monitor the cleaning process.

[0074] According to one embodiment, the radio frequency generator 40 is a high-frequency power device that generates high-frequency power by ionizing the reactive gas inside the chamber 20 to generate plasma, and causing the active particles in the generated plasma to collide with the walls of the chamber to form a thin film.

[0075] According to one embodiment, the RF matching unit 30 performs impedance matching between the RF generator 40 and the chamber 20 to perform the function of efficiently transferring the energy required for plasma generation. According to one embodiment, impedance matching is a process that minimizes signal reflection and achieves maximum power transfer by creating impedance between two circuit elements in the same manner. According to one embodiment, if the gas inside the chamber 20 is ionized and plasma is generated due to the RF power transferred to the chamber 20 through the RF matching unit 30, the cleaning process monitoring device 100 can monitor the impedance of the plasma to understand the state of the chamber 20. The impedance of the plasma varies depending on the pressure, temperature, gas type, plasma density, etc., inside the chamber 20, reflecting the state inside the chamber 20.

[0076] According to one embodiment, if the impedance (plasma impedance) inside the chamber 20 is monitored during the aging process, and it is found that the impedance after the cleaning process is different from the expected value, the cleaning process monitoring device 100 can determine that a problem has occurred in the cleaning process.

[0077] According to one embodiment, the cleaning process monitoring device 100 can use the automatic frequency tuning (AFT) function in the aging process to measure the impedance of the chamber 20 in real time, and thereby infer the state of the chamber after the cleaning process.

[0078] According to one embodiment, the AFT function is a function that adjusts the frequency output by the RF generator 40 in real time to minimize the impedance matching between it and the chamber 20. Generally, the goal is to find and output the optimal frequency based on the state of the chamber 20, instead of a fixed frequency such as 13.56 MHz used in semiconductor processes, thereby improving the stability of plasma generation and increasing process efficiency.

[0079] According to one embodiment, if the aging process is reached within the chamber 20 during the normal cleaning process, a specific range of frequency modulation occurs. If the frequency detected in the aging process exceeds a predetermined frequency range, the cleaning process monitoring device 100 can determine that a problem has occurred in the cleaning process or an anomaly has occurred inside the chamber 20. That is, the cleaning process monitoring device 100 can quantitatively analyze the impedance change of the chamber 20 to accurately determine whether the cleaning process is successful. In this case, the specific range of frequency modulation can be predetermined by experimental values ​​or can be specified in different ways based on the internal conditions of the chamber 20, including its shape, type, aging state, plasma density, etc.

[0080] exist Figure 4 and Figure 5 The document details the predetermined frequency range for determining whether a cleaning process is abnormal. In particular, Figure 5 This is an example of a normal / abnormal frequency modulation range that can be experimentally determined to indicate the state of the interior of chamber 20 after a cleaning process.

[0081] According to one embodiment, the cleaning process monitoring device 100 can perform step S101, which activates the AFT function in response to the start of the aging process, thereby performing step S102, which matches the internal impedance of the chamber.

[0082] According to one embodiment, the cleaning process monitoring device 100 can perform step S103, which involves detecting a frequency used in impedance matching by utilizing the impedance detected in the chamber 20, and determining which frequency band the detected frequency band is from a predetermined frequency band.

[0083] Cleaning process proceeding normally - first frequency band

[0084] According to one embodiment, when the detected frequency exists in the first frequency band (S104), the cleaning process monitoring device 100 can determine that the cleaning process is proceeding normally, thereby ending the aging process (S105). Furthermore, after the aging process ends normally, the device controls the process to automatically proceed (S106).

[0085] According to one embodiment, the first frequency band is a frequency band corresponding to the impedance of a normal state that is determined to be suitable for a deposition process inside the chamber 20.

[0086] According to one embodiment, after the aging process is completed normally, the cleaning process monitoring device 100 can set the frequency of the high-frequency power supplied to the interior of the chamber 20 to 13.56 MHz. In semiconductor processes, 13.56 MHz is generally considered a suitable frequency range for effectively generating and maintaining plasma, and related equipment and raw materials are optimized at this frequency. Therefore, after the cleaning and aging processes are completed normally, the cleaning process monitoring device 100 can be set to control the deposition process to return to a frequency of 13.56 MHz, thereby obtaining thin films of consistent quality.

[0087] Figure 5A graph showing frequency bands related to cleaning procedures for a specific chamber, the first frequency band including a first frequency 5001 and a second frequency 5002 and below. According to one embodiment, the first frequency 5001 may have a frequency of 13.93 MHz, and the first frequency 5002 may have a frequency of 13.97 MHz.

[0088] According to an embodiment, if a frequency used to achieve impedance matching of the chamber 20 is detected in a frequency band above 13.93MHz and below 13.97MHz, the cleaning process monitoring device 100 can determine that the cleaning process has been completed normally and is suitable for the deposition process. In this case, the values ​​of the first frequency 5001 and the first second frequency 5002 are values ​​specified experimentally and may vary depending on the state of the chamber, process conditions, etc., and are not limited by the values ​​of an experimental example in this specification.

[0089] Cleaning process failed / aging process succeeded - second frequency band

[0090] According to one embodiment, the cleaning process monitoring device 100 determines that an abnormal state has occurred in the cleaning process of the chamber 20 when the regulated frequency S107 is detected in a second frequency band higher than the first frequency band.

[0091] According to one embodiment, when the adjusted frequency S108 is detected in the second-first frequency band, the cleaning process monitoring device 100 is controlled to output a warning reminder S109 indicating an abnormal state of the cleaning process without interrupting the aging process; and when the adjusted frequency S110 is detected in the second-second frequency band, the cleaning process monitoring device 100 is controlled to output a warning reminder S111 indicating an abnormal state of the cleaning process while interrupting the aging process.

[0092] According to one embodiment, the second-second frequency band, which is a frequency band higher than the second-first frequency band, is a value determined experimentally by impedance monitoring inside the chamber 20.

[0093] According to one embodiment, the method further includes a cleaning process instruction step that, when the adjusted frequency is detected in the second-second frequency band, instructs the cleaning process to be repeated.

[0094] Reference Figure 5The second frequency band may include a frequency band exceeding the first-second frequency 5002. More specifically, the second-first frequency band is a frequency band exceeding the first-second frequency 5002 and below the second frequency 5003. According to one embodiment, the first-second frequency 5002 may exhibit a frequency of 13.97 MHz, and the second frequency 5003 may have a frequency of 14.23 MHz. In this case, the values ​​of the first-second frequency 5002 and the second frequency 5003 are specified experimentally and may vary depending on the state of the chamber, process conditions, etc., and are not limited by the values ​​of an experimental example in this specification.

[0095] According to one embodiment, if a frequency used for impedance matching of the chamber 20 is detected in the second frequency band exceeding 13.97MHz and below 14.23MHz, the cleaning process monitoring device 100 can determine that although an abnormality has occurred in the cleaning process, it is still within the range of normal operation. At this time, the cleaning process monitoring device 100 can generate a warning alert output including information on the detected frequency, cleaning status, and the thickness of the aging film, and can continue the process without interruption. Through this process, management personnel are alerted in advance, allowing measures to be taken to continue the process without interrupting the next step.

[0096] According to one embodiment, if a frequency used to achieve impedance matching of the chamber 20 is detected in the second-second frequency band exceeding 14.23 MHz, the cleaning process monitoring device 100 determines that the cleaning process has not been performed normally, thereby exceeding the thickness of the aging film formed on the wall of the chamber 20 in the aging process. If the thickness of the aging film exceeds the normal range, it can hinder the growth of the vapor-deposited film in the next process, and impurities may be generated in the aging film itself.

[0097] According to one embodiment, the cleaning process monitoring device 100 can immediately interrupt the aging process and generate a warning alert output including information on the detected frequency, cleaning status, and thickness of the aging film. In this case, if the determination is based on the thickness of the aging film, the aging process has been successfully completed; therefore, control can be achieved by simply re-implementing the cleaning process.

[0098] According to one embodiment, the cleaning process monitoring device 100 can immediately execute a new cleaning process after interrupting the currently ongoing aging process, or interrupt the aging process within a specified time and output a warning reminder so that management personnel can confirm the progress status. This can be set in different ways depending on the status of the process, and can also be set in different ways depending on the detected frequency value, and is not limited to this.

[0099] Cleaning process successful / aging process failed - third frequency band

[0100] According to one embodiment, if the adjusted frequency S112 is detected in a third frequency band lower than the first frequency band, the cleaning process monitoring device 100 can determine that an abnormal state has occurred in the aging process of the chamber 20.

[0101] According to one embodiment, when the adjusted frequency S115 is detected in the third-first frequency band, the cleaning process monitoring device 100 can output a warning reminder S116 indicating an abnormal state of the aging process without interrupting the aging process. Furthermore, when the adjusted frequency S113 is detected in the third-second frequency band, the aging process is interrupted, and a warning reminder S114 indicating an abnormal state of the aging process is output.

[0102] According to one embodiment, the third-second frequency band, being a frequency band lower than the third-first frequency band, is a value determined experimentally by impedance monitoring inside the chamber 20.

[0103] According to one embodiment, the method further includes an aging process instruction step that, when the adjusted frequency is detected in the third-second frequency band, instructs the aging process to be repeated.

[0104] According to one embodiment, the warning notification includes resolution information that can normalize the interior of the chamber 20 based on the frequency band detected by the adjusted frequency.

[0105] According to one embodiment, the warning notification is transmitted to at least one of an external terminal and an external server via the network 200.

[0106] Reference Figure 5 The third frequency band may include a frequency band less than the first frequency 5001. More specifically, the third frequency band is a frequency band greater than or equal to the third frequency 5004 and less than the first frequency 5001. According to one embodiment, the first frequency 5001 may exhibit a frequency of 13.93 MHz, and the third frequency 5004 may have a frequency of 13.68 MHz. In this case, the values ​​of the first frequency 5001 and the third frequency 5004 are values ​​specified experimentally and may vary depending on the state of the chamber 20, process conditions, etc., and are not limited by the values ​​of an experimental example in this specification.

[0107] According to one embodiment, if a frequency used for impedance matching of the chamber 20 is detected in the third frequency band above 13.68MHz and below 13.93MHz, the cleaning process monitoring device 100 can determine that although an abnormality has occurred in the aging process, it is still within the range of normal operation. At this time, the cleaning process monitoring device 100 can generate a warning output including information on the detected frequency, the cleaning status, the thickness of the aging film, etc., and continue the process without interruption. Through this process, management personnel are alerted in advance, allowing measures to be taken to continue the process without interrupting the next step.

[0108] According to one embodiment, if a frequency used to achieve impedance matching of the chamber 20 is detected in the third-second frequency band (below 13.68 MHz), the cleaning process monitoring device 100 determines that the aging process has not proceeded normally, and therefore the thickness of the aging film on the wall of the chamber 20 formed in the aging process has not been achieved. If the thickness of the aging film is below the normal range, the chamber lifespan may be shortened due to insufficient protection of the chamber walls, and problems such as film assembly / disassembly, cracking, or reduced film purity may occur due to reduced adhesion between the vapor-deposited films obtained in the next process.

[0109] According to one embodiment, the cleaning process monitoring device 100 can immediately interrupt the aging process and generate a warning alert output including information on the detected frequency, the cleaning status, the thickness of the aging film, etc. At this time, the cleaning process monitoring device 100 can re-formulate the cleaning formula. For example, it can be controlled to re-formulate a cleaning formula including an aging process-cleaning process-aging process.

[0110] According to one embodiment, the cleaning process monitoring device 100 can immediately restart the cleaning formula after interrupting the currently ongoing aging process, or interrupt the aging process within a specified time and output a warning reminder so that managers can confirm the progress status. This can be set in different ways depending on the status of the process, and can also be set in different ways depending on the detected frequency value, and is not limited to this.

[0111] According to one embodiment, after the processes performed after steps S109, S111, S114, and S116 are completed, the aging process is restarted. The cleaning process monitoring device 100 can monitor the internal impedance of the chamber 20 and continuously monitor whether the cleaning process is normal or abnormal based on the adjusted frequency range.

[0112] exist Figure 6The warning alerts output by the cleaning process monitoring device 100 are observed in detail below: The warning alerts can be output as audio alerts via the audio output device included in the cleaning process monitoring device 100 or an external speaker. Furthermore, based on the detected frequency, a warning message 6001 containing information related to the problem occurring within the chamber 20 can be displayed via the warning alert output unit 130, and in particular, the display unit included in the cleaning process monitoring device 100.

[0113] According to one embodiment, in the event of an abnormality during the cleaning process of the chamber 20, the warning message 6001 may include information regarding the reason for the abnormality. For example, it may include information such as the problem within the chamber estimated based on the detected frequency band and frequency, the aging thickness, whether the aging process was interrupted, and whether the problem pertains to an area requiring operator verification.

[0114] According to one embodiment, if the system is set to automatically restart the cleaning process after a predetermined time when it needs to be repeated (or the cleaning formula is restarted), the warning message 6001 can disappear after the predetermined time, and the cleaning process can be restarted. At this time, the warning reminder output unit 130 provides a process start button and a process stop button via the warning message 6001, thereby prompting the manager whether to directly monitor the process. For example, the cleaning process can be immediately restarted in response to the manager's input of selecting the process start button, and the aging process can be immediately stopped in response to the manager's input of selecting the process stop button, waiting for the manager's next input.

[0115] According to one embodiment, the cleaning process monitoring device 100 can transmit the warning alerts to the user terminal 300 and the external server 400 via the network 200. For example, the warning information for the cleaning process can be output using a terminal operated by a manager who is away from the cleaning process monitoring device 100, and the warning alert information can be periodically sent to the external server 400 to monitor the status of the cleaning process monitoring device 100 and the chamber 20.

[0116] The methods, actions, or techniques of an embodiment of the present invention can be embodied by various means. For example, such techniques can also be embodied by hardware, firmware, software, or a combination thereof. Those skilled in the art will understand that the various exemplary logic blocks, modules, circuits, and algorithm steps described in connection with the embodiments of this application can be embodied by electronic hardware, computer software, or a combination of both. To clearly illustrate this substitution between hardware and software, various exemplary structural elements, blocks, modules, circuits, and steps have generally been described above from their functional perspective. Whether such functionality is embodied by hardware or software depends on the design requirements of the specific application and the overall system. While those skilled in the art can embody the described functionality in various ways for their respective specific applications, such embellishment should not be construed as departing from the scope of this disclosure.

[0117] As described above, the present invention has been illustrated with reference to the embodiments shown in the figures. However, it should be understood that these are merely exemplary, and various modifications and equivalent embodiments are possible based on common knowledge in the art to which this invention pertains. Therefore, the true scope of protection of this invention is based on the appended claims and should be determined according to the specific content of the invention described above.

[0118] Industrial availability

[0119] This invention relates to a method and apparatus for monitoring the cleaning process of a chamber, which can be applied to the semiconductor manufacturing industry.

Claims

1. A method for monitoring the cleaning process of a chamber, characterized in that, include: The high-frequency power supply step should be performed after the cleaning process is completed in the chamber and the aging process begins, by supplying high-frequency power to the inside of the chamber. The impedance matching step involves adjusting the frequency of the high-frequency power supply to achieve impedance matching inside the cavity. The chamber abnormality judgment step determines whether the adjusted frequency deviates from the first frequency band to determine whether an abnormality has occurred inside the chamber. as well as The warning output step outputs a warning reminder caused by an abnormality occurring inside the chamber.

2. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, The first frequency band is the frequency band corresponding to the impedance that determines the interior of the chamber as a normal state suitable for the deposition process.

3. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, In the chamber anomaly detection step, If the adjusted frequency is detected in a second frequency band higher than the first frequency band, it is determined that an abnormal state has occurred in the cleaning process of the chamber.

4. The method for monitoring the cleaning process of a chamber according to claim 3, characterized in that, In the warning and reminder output step, If the adjusted frequency is detected in the second-first frequency band, a warning alert indicating an abnormal state in the cleaning process is output without interrupting the aging process. If the adjusted frequency is detected in the second-second frequency band, the aging process is interrupted, and a warning reminder indicating an abnormal state of the cleaning process is output.

5. The method for monitoring the cleaning process of a chamber according to claim 4, characterized in that, The second-second frequency band, which is a frequency band higher than the second-first frequency band, is a value determined experimentally by impedance monitoring inside the cavity.

6. The method for monitoring the cleaning process of a chamber according to claim 4, characterized in that, Also includes: If the adjusted frequency is detected in the second-second frequency band, the cleaning procedure instruction step is instructed to repeat the cleaning procedure.

7. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, In the chamber anomaly detection step, If the adjusted frequency is detected in a third frequency band lower than the first frequency band, it is determined that an abnormal state has occurred in the aging process of the chamber.

8. The method for monitoring the cleaning process of a chamber according to claim 7, characterized in that, In the warning and reminder output step, If the adjusted frequency is detected in the third-first frequency band, a warning alert indicating an abnormal state of the aging process is output without interrupting the aging process. If the adjusted frequency is detected in the third-second frequency band, the aging process is interrupted, and a warning reminder indicating the abnormal state of the aging process is output.

9. The method for monitoring the cleaning process of a chamber according to claim 7, characterized in that, The third-second frequency band, which is a frequency band lower than the third-first frequency band, is a value determined experimentally by impedance monitoring inside the cavity.

10. The method for monitoring the cleaning process of a chamber according to claim 7, characterized in that, Also includes: If the adjusted frequency is detected in the third-second frequency band, the aging process instruction step is instructed to be repeated.

11. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, The warning includes solutions based on the frequency band of the detected adjusted frequency to normalize the interior of the chamber.

12. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, The warning notification is transmitted over a network to at least one of the external terminals and external servers.

13. The method for monitoring the cleaning process of a chamber according to claim 1, characterized in that, Also includes: After the aging process is completed normally, the frequency of the high-frequency power supply supplied to the chamber is set to 13.56MHz.

14. A device for monitoring the cleaning process of a chamber, characterized in that, include: Memory for storing at least one instruction; and One or more processors, connected to the memory, are used to control the cleaning process monitoring device of the chamber. The one or more processors execute the at least one instruction. To address the need to supply high-frequency power to the interior of the chamber after the cleaning process is completed and the aging process begins, The frequency of the high-frequency power supply is adjusted to achieve impedance matching inside the cavity. To determine whether an abnormality has occurred inside the cavity, it is necessary to determine whether the adjusted frequency deviates from the first frequency band. It controls the system by outputting warnings and alerts triggered by abnormalities occurring inside the chamber.

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