Method, apparatus and device for planarization by electron beam and ion beam current

Abstract

The application relates to the technical field of sub-nanometer surface treatment, and particularly provides a method, equipment and device for planarization through electron beams and ion beam flows, which are used for processing optical materials. The method comprises the following steps: confirming a first mapping relationship according to the relationship between flow parameters and temperature of the optical materials; confirming a thermal activation temperature according to the initial temperature and melting point of the optical materials and the first mapping relationship; irradiating a target area of the optical materials through an electron beam, so that the temperature of a surface layer of the target area rises from the initial temperature to the thermal activation temperature, and the surface layer is in a thermal activation state; and irradiating the surface layer in the thermal activation state through an ion beam flow, so that tangential kinetic energy is provided to atoms of the surface layer, the atoms of the surface layer are diffused and rearranged, and a planarized surface layer is obtained. The application has the advantages of no mechanical stress introduction, no chemical residue, stable processing process, high processing precision and the like.

Description

Technical Field

[0001] This application relates to the field of sub-nanometer surface treatment technology, and more specifically, to a method, apparatus, and device for planarization using electron beams and ion beams. Background Technology

[0002] Sub-nanometer surface treatment technologies are mainly used for ultra-high precision surface planarization and defect repair of high-precision devices, such as mechanical polishing (MP), chemical mechanical polishing (CMP), and ion beam polishing (IBF).

[0003] In existing technologies, MP (Metal Motion) and CMP (Chemical Motion Motion) are direct contact technologies that remove peak areas from the processed surface through physical friction, belonging to subtractive surface smoothing techniques. Direct contact and subtractive smoothing have the following problems: processing accuracy is difficult to achieve at the sub-nanometer level, making them only suitable for roughing; and for hard materials, such as quartz, sapphire, or microcrystalline glass, they easily introduce mechanical stress, causing micro-fracture defects. Additionally, CMP also introduces chemical contamination. While IBF (In-Batch Flame Sputtering) technology achieves non-contact processing, avoiding micro-fracture and chemical contamination problems, it mainly achieves subtractive processing through atomic sputtering, which may introduce even finer mechanical stress. Furthermore, for materials with strong atomic binding, IBF consumes a lot of energy and has low processing efficiency. Moreover, when processing materials with a small transition range from softening point to melting point, such as single-crystal silicon, IBF easily exceeds the melting point, causing rapid flow of surface atoms, which is difficult to control in real time and cannot achieve surface treatment for such materials. In addition, when using IBF for surface repair, the ion beam has a large beam diameter and lacks the ability to repair small target areas. Therefore, there is an urgent need in the field of sub-nanometer polishing technology for a technical solution that is stress-free and free of chemical residues, has high processing stability, and produces fine results. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a method, apparatus, and device for planarization using electron beams and ion beams, thereby solving at least one technical problem in related technologies, such as processing stress, chemical residues, low processing stability, or low regional processing accuracy.

[0005] In a first aspect, embodiments of this application provide a method for planarization using electron beams and ion beams for processing optical materials, comprising: Based on the relationship between the flow parameters of optical materials and temperature, the first mapping relationship is confirmed; The thermal activation temperature is determined based on the initial temperature and melting point of the optical material and the first mapping relationship; By irradiating the target area of ​​the optical material with an electron beam, the temperature of the surface layer of the target area is raised from the initial temperature to the thermal activation temperature, thereby causing the surface layer to be in a thermally activated state. The surface layer in a thermally activated state is irradiated with an ion beam to provide tangential kinetic energy to the atoms of the surface layer, causing the atoms of the surface layer to diffuse and rearrange, thereby obtaining a planarized surface layer. The thermal activation temperature is greater than the initial temperature and less than the melting point, which is used to reduce the corresponding flow parameters by at least one order of magnitude compared to the initial temperature.

[0006] Specifically, the main technical concept of this application lies in decoupling surface heating and momentum input by heating the optical material with a lightweight, high-thermal-effect electron beam and driving the surface layer with a high-quality, low-velocity ion beam. This allows the electron beam to heat the surface to a thermally activated state without affecting the surface morphology, reducing the interatomic binding and suppressing the sputtering effect of the ion beam on the surface atoms. The ion beam then primarily drives the diffusion and rearrangement of surface atoms through tangential propulsion. Therefore, this application, by combining the electron and ion beams in sequence, enables non-contact surface treatment while suppressing the sputtering characteristics of the ion beam, promoting non-reducing rearrangement of the surface layer. This makes the planarization process of the optical material more controllable and stable. Therefore, this application has advantages such as no mechanical stress introduction, no chemical residue, reliable processing, and high processing precision.

[0007] Furthermore, the flow parameter is configured as Young's modulus or viscosity coefficient.

[0008] Optionally, the ion beam is configured as a single ion beam or an ion beam cluster.

[0009] Specifically, another technical concept of this application is to control the ion beam flow rate by using a single ion beam or ion beam cluster, so that the momentum of the ion beam input is smaller, thereby further suppressing atomic sputtering on the surface.

[0010] Furthermore, the planarization method provided in this application using electron beams and ion beams, before irradiating the target area of ​​the optical material with an electron beam, further includes: Based on the relationship between the heating depth and power density of the electron beam, the second mapping relationship is confirmed; The morphological information of the optical material is acquired to locate the target region and confirm the error type of the target region. Based on the error type, the thermal activation depth of the surface layer is determined; Based on the second mapping relationship and the thermal activation depth, the heating power density of the electron beam is confirmed; The error types include low-frequency error, medium-frequency error, and high-frequency error.

[0011] Specifically, another technical concept of this application is to control the heating power density of the electron beam according to the error type in order to obtain a heating power density that is adapted to the error type, thereby improving the heating processing capability of the electron beam for different error types.

[0012] Furthermore, the planarization method using electron beams and ion beams provided in this application also includes: Based on the appearance information, the peaks and troughs of the target area are confirmed; Based on the peaks and troughs, the position and angle of the ion beam irradiation are determined, so that the ion beam irradiates the side of the peak away from the trough and deviates from the normal of the optical material by 10°-30°.

[0013] Specifically, another technical concept of this application is that by setting the irradiation position and irradiation angle of the ion beam, the atoms of the wave peak are specifically pushed to fill the wave trough, making this application applicable to the local repair of optical materials, thereby expanding the application scenarios of this application.

[0014] Furthermore, before irradiating the thermally activated surface layer with an ion beam, the process further includes: confirming a third mapping relationship based on the relationship between the power density of the ion beam and the rearrangement rate; and confirming a preset rearrangement rate based on the error type. The process of irradiating the surface layer in a thermally activated state with an ion beam includes: acquiring the height change rate between the peak and the trough in real time; and determining the real-time power density of the ion beam based on the height change rate and the third mapping relationship, so that the height change rate is similar to the preset rearrangement rate.

[0015] Specifically, another technical concept of this application is to achieve precise control of the ion beam through a third mapping relationship, thereby strengthening the process control of atomic rearrangement and improving the reliability of this application.

[0016] Optionally, when the ion beam is configured as an ion beam cluster, it includes: Based on the error type, determine the quantity parameter of the ion beam clusters used for irradiating the surface layer in the thermally activated state, including: The quantity parameters include: a first number of ions, a second number of ions, and a third number of ions corresponding to low-frequency error, medium-frequency error, and high-frequency error, respectively; the second number of ions is greater than the first number of ions, and the first number of ions is greater than the third number of ions.

[0017] Specifically, another technical concept of this application is to improve the repair accuracy of this application by selectively repairing low-frequency, medium-frequency, and high-frequency errors through momentum control of ion beam clusters.

[0018] Further, based on the order of magnitude reduction in the flow parameters, the charge parameters of the ion beam clusters used for irradiating the thermally activated surface layer are determined, including: The charge parameter includes: a first charge and a second charge, wherein the second charge is greater than the first charge; when the flow parameter decreases by one order of magnitude, the charge parameter is configured as the second charge; or, when the flow parameter decreases by at least two orders of magnitude, the charge parameter is configured as the first charge.

[0019] Secondly, embodiments of this application provide an electronic device, including a memory, a processor, and a computer program stored in the memory. The processor is configured to execute the computer program to implement the planarization method using an electron beam and an ion beam provided according to any embodiment of the first aspect. It is understood that the beneficial effects provided by any embodiment of the second aspect can be understood in conjunction with the beneficial effects provided by any possible embodiment of the first aspect.

[0020] Thirdly, embodiments of this application provide an apparatus for planarization using electron beams and ion beams, comprising: An electron beam source is used to provide an electron beam. An ion beam source is used to provide an ion beam. A control component is connected to the electron beam source and the ion beam source, respectively; The control component includes a processor for implementing a planarization method using an electron beam and an ion beam, according to any embodiment of the first aspect.

[0021] It is understood that the beneficial effects provided by any embodiment of the third aspect can be understood in reference to the beneficial effects provided by any possible embodiment of the first aspect.

[0022] The beneficial technical effects of the technical solutions provided in this application include: This application first heats the target area of ​​the optical material using a lightweight, high-thermal-effect electron beam, and then heats the surface layer of the target area from the initial temperature to the thermal activation temperature according to a first mapping relationship. Since the thermal activation temperature is higher than the initial temperature of the optical material but lower than its melting point, the surface layer, although not melted, experiences a decrease in flow parameters by at least one order of magnitude, resulting in weaker atomic binding and easier atom movement. Then, by irradiating the surface layer with an ion beam, the high-quality ions easily drive and rearrange the surface atoms. In other words, this application decouples the heating and rearrangement processes of the target area by using the electron beam and ion beam sequentially. The electron beam is used for heating the target area, while the ion beam is used for tangentially driving the surface atoms in the thermally activated state. Compared to traditional IBF technology, the ion beam requires less power input and eliminates concerns about surface melting caused by ion beam heating, maximizing the limitation of the ion beam sputtering effect and allowing the surface atoms to automatically rearrange according to the minimum energy theory. In this process, the atoms at the surface peaks are in a thermally activated state, resulting in shallower interatomic potential wells and weaker binding. Triggered by the ion beam, the atoms at the peaks automatically fill the valleys under tension and other factors, thus achieving automatic surface planarization. Therefore, this application, by driving the atoms at the peaks to fill the valleys, abandons the subtractive polishing process of traditional IBF technology that relies on atomic sputtering. Instead, it achieves non-destructive planarization of the target area through a non-subtractive smoothing process. This gives the application the advantages of no mechanical stress introduction, no chemical residue, reliable processing, and high processing precision.

[0023] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0024] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 A schematic flowchart illustrating a planarization method using an electron beam and an ion beam, provided for an embodiment of this application; Figure 2 A schematic diagram of a device for planarization using electron beams and ion beams is provided for an embodiment of this application; Figure 3 A schematic diagram illustrating planarization using electron beams and ion beams, provided for embodiments of this application. Figure 4 A schematic diagram of the relationship between Young's modulus and temperature for quartz glass provided in the embodiments of this application; Figure 5 A schematic diagram showing the relationship between the logarithm of the viscosity coefficient (base 10) of quartz glass and temperature, provided in an embodiment of this application. Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of this application; Figure label: 1. Electron beam source; 2. Ion beam source; 3. Optical material; 11. Electron beam; 21. Ion beam; 31. Target region; 311. Peak; 312. Trough. Detailed Implementation

[0025] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0026] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by this art. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."

[0027] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0028] This application mainly relates to a method, apparatus, and device for planarization using electron beams and ion beams. By coordinating the sequential flow of electron and ion beams, the heating and driving processes of optical materials are decoupled, enabling precise control of the flow of surface atoms. This minimizes the sputtering effect of the ion beam and, through the principle of minimum energy and the surface tension of atoms, pushes the surface atoms to automatically rearrange from the peaks to the troughs, achieving non-reducing surface smoothing. This results in high processing precision, no surface damage, and a more reliable planarization process.

[0029] The research and development approach of this application includes: abandoning the subtractive smoothing process of traditional IBF technology, and achieving self-planarization of the surface layer through the minimum energy law of the optical material itself, thus realizing non-subtractive smoothing of the optical material surface layer. This allows this application to avoid the microcracks that may be introduced by atomic sputtering in IBF technology. Firstly, this application uses the heating effect of an electron beam to raise the temperature of the surface layer of the target region to the thermal activation temperature, causing the atomic potential wells on the surface layer to become shallower and the thermal amplitude to increase, thereby making the surface layer viscous. At this point, an ion beam is used to laterally push the viscous surface layer. Based on the minimum energy law, the atoms on the surface layer will automatically diffuse and rearrange, thus achieving automatic planarization of the surface layer without atomic sputtering, improving the operational reliability and processing accuracy of optical material planarization.

[0030] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.

[0031] Based on the same inventive concept, this application provides a device for planarization using electron beams and ion beams. Please refer to [reference needed]. Figure 2 and Figure 3 , Figure 2 This is a schematic diagram of a device for planarization using electron beams and ion beams, provided as an embodiment of this application. Figure 3 This is a schematic diagram illustrating planarization using an electron beam 11 and an ion beam 21, provided as an embodiment of this application. It is understood that the planarization method using an electron beam and ion beam provided in this application is readily understood based on the description of the apparatus for planarization using an electron beam and ion beam provided in this application.

[0032] The planarization apparatus provided in this application embodiment includes: an electron beam source 1, an ion beam source 2, an optical material support platform, a control component, and a detection component.

[0033] A control component, connected to the electron beam source 1, the ion beam source 2, the optical material support platform, and the detection component, is used to control each component. The control component includes a processor for implementing various optional embodiments of any planarization method using the electron beam 11 and the ion beam 21.

[0034] Electron beam source 1 is used to provide electron beam 11, such as a cathode gun, field emission electron gun, or tungsten filament electron gun.

[0035] Ion beam source 2, used to provide ion beam 21, such as Kaufman ion source, radio frequency ion source, etc., for generating single ion beams; and gas cluster ion source equipment, used to generate ion beam clusters. The working gases for single ion beams and ion beam clusters include inert gases or reactive gases such as argon, nitrogen, or oxygen.

[0036] Optical material support platform, used to position and drive the movement of optical materials, such as slide table, five-axis motion platform, etc.

[0037] The detection component is used to detect the state of the optical material 3, such as an interferometer, infrared radiation, magnetic probe, etc.

[0038] Vacuum chamber, used to provide The high vacuum environment is provided by a heat shielding layer and electrodes to prevent charged dust accumulation on the inner wall of the vacuum chamber.

[0039] In this system, electron beam source 1 and ion beam source 2 can be synchronously irradiated using a two-dimensional scanning assembly, causing the target regions 31 irradiated by both to overlap. It is understood that the two-dimensional scanning assembly is a synchronous structure.

[0040] Based on the same inventive concept, this application provides a method for planarization using an electron beam 11 and an ion beam 21 for processing optical materials 3. Please refer to [link / reference]. Figure 1 This is a schematic flowchart of a method for planarization using an electron beam 11 and an ion beam 21, provided as an embodiment of this application.

[0041] Before planarization by electron beam 11 and ion beam 21, the first mapping relationship is confirmed based on the relationship between the flow parameters of optical material 3 and temperature.

[0042] The flow parameters are configured as Young's modulus or viscosity coefficient.

[0043] Young's modulus is a mechanical property of solid materials, used to measure the stiffness under tensile or compressive stress when a longitudinal force is applied to the material. That is, this application can use Young's modulus (symbol E) to measure the flow characteristics of optical material 3. For example: Please refer to... Figure 4 This is a schematic diagram of the relationship between Young's modulus and temperature for quartz glass provided in the embodiments of this application. The vertical axis represents Young's modulus E, and the unit is... The horizontal axis represents temperature T, in °C. The Young's modulus of quartz glass at standard room temperature (25 °C) is... As the temperature continues to rise, quartz glass reaches the "glassing" inflection point of 1140℃, and its Young's modulus begins to decrease. Around 1200℃, the Young's modulus drops to single digits, meaning it decreases by one order of magnitude, and the quartz glass enters the viscoelastic region. Around 1500℃, the Young's modulus of the quartz glass decreases again to decimal places, entering a near-liquid state and beginning to melt. At 1710℃, it breaks through the melting point of quartz glass, and the Young's modulus approaches 0 GPa. Therefore, this application can confirm the first mapping relationship based on the relationship between Young's modulus and temperature, which can be used to measure the fluidity of optical material 3. It is understood that other optical materials 3, such as optical glass, microcrystalline glass, single-crystal silicon, sapphire, oxide crystals, ceramics, etc., can also refer to this relationship. Figure 4 The provided example curves illustrating the Young's modulus versus temperature for quartz glass are provided for understanding. This application, based on the relationship between Young's modulus and temperature, can also be applied to hard and brittle materials such as optical glass, microcrystalline glass, single-crystal silicon, sapphire, oxide crystals, and ceramics. Furthermore, the unit order of magnitude is measured in decimal; reducing from a hundreds digit to a tens digit represents a reduction of one unit order of magnitude, and reducing from a tens digit to a units digit represents another reduction of one unit order of magnitude, for a total reduction of two unit orders of magnitude.

[0044] Viscosity coefficient is a physical quantity that describes the viscosity (viscosity) property of a liquid. That is, this application can also use the viscosity coefficient (symbol η) to measure the flow characteristics of optical material 3. For example: Please refer to... Figure 5 This is a schematic diagram illustrating the relationship between the logarithm of the viscosity coefficient (base 10) of quartz glass and temperature, as provided in the embodiments of this application. Taking quartz glass as an example again, at room temperature, the viscosity coefficient of quartz glass... As the temperature continues to rise, the viscosity coefficient continues to decrease, reaching a value of ~ at 1140℃ when it "glasses". The temperature dropped by 11 orders of magnitude to around 1250℃, which is ~ The temperature drops further by 5 orders of magnitude, reaching 1710℃, breaking through the melting point of quartz glass, and becoming ~ It exhibits liquid-like fluidity. Since the viscosity coefficient η decreases by a significant order of magnitude with increasing temperature, to facilitate the illustration of the relationship between viscosity coefficient and temperature, Figure 5 The ordinate represents the logarithm of the viscosity coefficient η to base 10, where η is in units of 10. The horizontal axis represents temperature T, and 24 represents the viscosity coefficient. The value of the logarithmic function of the viscosity coefficient with base 10 is used, and so on. Therefore, this application can also confirm the first mapping relationship based on the relationship between viscosity coefficient and temperature, which can be used to measure the flowability of optical material 3.

[0045] After confirming the first mapping relationship, the thermal activation temperature is confirmed based on the initial temperature and melting point of optical material 3 and the first mapping relationship.

[0046] Thermal activation temperature is a temperature higher than the initial temperature but lower than the melting point, used to reduce flow parameters by at least one order of magnitude compared to the initial temperature. For example, still using quartz glass as an example, the Young's modulus of quartz glass decreases from the standard room temperature of 25°C... After being reduced to 1200℃ The following represents a reduction of one order of magnitude, decreasing to [a lower value] after 1400℃. The following represents a reduction of two orders of magnitude; at 1500℃, the Young's modulus is... The temperature did not decrease by another order of magnitude, but at this point, the quartz glass had entered a "liquid-like state," exhibiting strong fluidity. Quartz glass in this "liquid-like state" cannot be propelled by the ion beam 21, which would cause the surface layer of the target area 31 to be significantly pushed or sputtered, resulting in a new type of error on the surface of the optical material 3. That is, in the "liquid-like state," the ion beam 21 cannot achieve surface planarization of the quartz glass. Therefore, based on the decrease in Young's modulus by one order of magnitude, the thermal activation temperature of the quartz glass can be between 1200℃ and 1500℃. Referring to the steps for confirming the thermal activation temperature using Young's modulus, the thermal activation temperature can also be confirmed using the viscosity coefficient, with the vertical axis as... For example, the viscosity coefficient ranges from 25℃ to 1500℃, and the viscosity coefficient ranges from... Reduce to ~ This represents a reduction of 22 orders of magnitude in viscosity. Since the viscosity coefficient decreases by a significant number of orders of magnitude, the viscosity coefficient is converted to... At 25℃, the value is At 1140℃, the value drops below 10, meaning it decreases by one order of magnitude. Based on the melting point of quartz glass, the thermal activation temperature of quartz glass ranges from 1140℃ to 1710℃. It can be understood that standard room temperature of 25℃ is the initial temperature of quartz glass, and this initial temperature can be adjusted according to actual temperature conditions. The melting point refers to the temperature at which a solid changes its state from solid to liquid; the melting point of quartz glass is 1710℃. Furthermore, the thermal activation temperature of other optical materials 3 can also be determined based on the first mapping relationship. For example, when the Young's modulus of single-crystal silicon reaches its melting point of 1414℃, it is 115 GPa. The decrease in Young's modulus compared to 25℃ is not significant. In this case, the thermal activation temperature of single-crystal silicon can be determined through the first mapping relationship confirmed by viscosity coefficient and temperature. For example, at 25℃, the Young's modulus of single-crystal silicon... The value is 50, and after 1350℃, the single-crystal silicon... The thermal activation temperature of monocrystalline silicon can be reduced to below 10, meaning it can range from 1350℃ to 1414℃. Therefore, the thermal activation temperature of all optical materials 3 can be determined through the first mapping relationship. Specifically, this application can obtain the thermal activation temperature through the first mapping relationship confirmed by Young's modulus, through the first mapping relationship confirmed by viscosity coefficient, or through a combination of the first mapping relationships confirmed by Young's modulus and viscosity coefficient, thus obtaining the thermal activation temperature of different optical materials.

[0047] Furthermore, for polymeric or glassy optical materials 3, the thermal activation temperature is configured to be higher than the temperature at which the optical material 3 enters the "glass transition" state and lower than the temperature at which the optical material 3 enters the "liquid-like state" state; or, the thermal activation temperature is configured to be the temperature at which the optical material 3 is in the "viscoelastic region". It can be understood that "glass transition" refers to the process by which, for amorphous polymers, the polymer changes from a highly elastic state to a glassy state through cooling, or from a glassy state to a highly elastic state through heating. The temperature at which this glass transition occurs is called the glass transition temperature. For crystalline polymers, the glass transition refers to the transition of their amorphous portion from a highly elastic state to a glassy state (or from a glassy state to a highly elastic state). That is, "glass transition" applies to polymeric materials and small molecule materials with "glass transition" properties; that is, this application is basically applicable to all optical materials 3 with "glass transition" properties. "Liquid-like state" refers to a substance that has liquid properties but does not fully conform to the traditional definition of a liquid, typically exhibiting fluidity and deformability. That is, the thermal activation temperature refers to the temperature at which the optical material 3 is glassy but does not enter the liquid-like state. "Viscoelastic region" refers to the temperature at which the optical material 3 simultaneously exhibits both viscosity and elasticity. In other words, the thermal activation temperature refers to the temperature at which the optical material 3 simultaneously exhibits both viscosity and elasticity. Therefore, the thermal activation temperature of this application can also be defined based on "glass transition" and "liquid-like state" or "viscoelastic region".

[0048] Alternatively, the thermal activation temperature can also be determined based on the percentage decrease in Young's modulus, such as a decrease of 50%-90% compared to the initial temperature.

[0049] After determining the thermal activation temperature, the target area 31 of the optical material 3 is irradiated by the electron beam 11, so that the temperature of the surface layer of the target area 31 rises from the initial temperature to the thermal activation temperature, thereby making the surface layer present a thermally activated state.

[0050] exist Figure 3In (a), an electron beam 11 generated by electron beam source 1 irradiates the target region 31 of optical material 3. The electron beam 11 is indicated by a dashed line. An electron beam 11 refers to a beam of electrons. Typically, electrons generated by the cathode in an electron gun are accelerated to very high speeds under the influence of a high-voltage accelerating electric field between the cathode and anode, and then converged by a lens to form a dense, high-speed electron stream. Compared to ion beam 21, electron beam 11 has the characteristics of high energy density, small beam spot, and light mass. That is, this application utilizes the thermal effect of electron beam 11 to achieve rapid heating of the target region 31 of optical material 3, causing the surface of the target region 31 to quickly enter a thermally activated state. Furthermore, electron impacts can induce thermal shock and electric field disturbances on the surface, making the interatomic potential well on the surface shallower, facilitating a reduction in Young's modulus and viscosity coefficient. Simultaneously, unlike the large mass of ion beam 21, electron beam 11 can also prevent sputtering of surface atoms in the target region 31, ensuring that the surface morphology is not damaged during the heating process. Meanwhile, the advantage of the electron beam 11 is that the beam spot is small and the size of the beam spot is adjustable. The electron beam 11 can irradiate a small area of ​​the optical material 3. That is, this application can heat a small local area of ​​the optical material 3 by the electron beam 11, so that this application can be applied to the local repair of the optical material 3.

[0051] Optionally, before irradiating the target region 31 of the optical material 3 with the electron beam 11, a second mapping relationship is confirmed based on the relationship between the heating depth and power density of the electron beam 11. Here, the heating depth refers to the depth of the surface layer of the target region 31 heated to the thermal activation temperature, and the power density refers to the power that can be output or transmitted per unit mass, volume, or area. The curve relationship of the second mapping relationship is as follows: Initially, the heating depth of the target region 31 is linearly correlated with the power density of the electron beam 11; the heating depth increases with increasing power density. Furthermore, as the heating depth deepens, the linear increase in heating depth with power density gradually slows down, eventually approaching saturation. Under the second mapping relationship, the heating depth of the target region 31 first increases linearly with the power density of the electron beam 11, and then the growth gradually slows down until it approaches the maximum value. For example: still using quartz glass as an example, the accelerating voltage of electron beam 11 is set to... 30keV When the power density of electron beam 11 is At that time, the thermal activation depth was 13nm When the power density of electron beam 11 is At that time, the thermal activation depth was 124nm At this point, the thermal activation depth increases linearly with the heating power density; when the heating power density of electron beam 11 is At that time, the thermal activation depth was 512nm At this point, the increase in thermal activation depth begins to slow down; when the heating power density of electron beam 11 is At that time, the thermal activation depth was 1124nm / 1.124μm At this point, the increase in thermal activation depth begins to saturate; when the heating power density of electron beam 11 is At that time, the thermal activation depth was 1.3μm At this point, the thermal activation depth reaches its maximum. Therefore, in this embodiment, the heating power density of the electron beam can be obtained through the set thermal activation depth and the second mapping relationship. Furthermore, the saturation value of the thermal activation depth is positively correlated with the accelerating voltage of the electron beam 11; the higher the accelerating voltage, the higher the saturation value of the thermal activation depth. For example: still taking quartz glass as an example, the accelerating voltage of the electron beam 11 is... 50keV The saturation value of thermal activation depth 3.2μm The accelerating voltage of electron beam 11 is 70keV The saturation value of thermal activation depth 5.7μm The accelerating voltage of electron beam 11 is 100keV The saturation value of thermal activation depth 10.7μm That is, the embodiments of this application can increase the saturation upper limit of the thermal activation depth value by increasing the accelerating voltage of the electron beam 11, thereby making it suitable for the planarization of the surface layer with mid-frequency and low-frequency errors. It is understood that the second mapping relationship between the heating depth of the target region 31 and the power density of the electron beam 11 can be fitted using multiple experimental data for different optical materials 3. Meanwhile, the determination of the second mapping relationship for other optical materials 3 can be understood with reference to the example given for quartz glass.

[0052] Before obtaining the thermal activation depth of the surface layer, the topographic information of the optical material 3 is first acquired to locate the target region 31 and confirm the error type of the target region 31. The error types include low-frequency error, mid-frequency error, and high-frequency error. It is understood that the topographic information can be acquired using existing instruments such as electronic detectors and interferometers. Low-frequency error refers to surface shape error with a characteristic frequency of 10μm-100μm, mid-frequency error refers to surface shape error with a characteristic frequency of 1μm-10μm, and high-frequency error refers to surface shape error with a characteristic frequency of 0.1nm-1μm. That is, through detection, this application can locate multiple sets of target regions 31 with different error types on the optical material 3. Then, based on the error type of each target region 31, the corresponding thermal activation depth is confirmed. In this embodiment, based on low-frequency error, mid-frequency error, and high-frequency error, the thermal activation depth is configured as a first depth value, a second depth value, and a third depth value that decrease sequentially. For example, the first depth value is configured as 10μm-50μm, the second depth value as 1μm-5μm, and the third depth value as 0.1nm-100nm. This allows for planarization of multiple target regions 31 with different error types, ensuring that each target region 31 has a corresponding thermal activation depth, thus improving the applicability of this embodiment to the optical material 3. It is understood that electron beams with different accelerating electric fields can be selected according to different error types to achieve the corresponding thermal activation temperature. For example, still using quartz glass as an example, the third depth value for high-frequency error is set to... 0.1nm-100nm Then it can be done 20keV-30keV The electron beam acquires the corresponding thermal activation depth, and the second depth value of the intermediate frequency error is set to... 1μm-5μm Then it can be done 30keV-70keV The electron beam can be used to obtain the corresponding thermal activation depth. If it is necessary to further increase the saturation upper limit of the thermal activation depth, the accelerating electric field can be further increased by using a high-energy electron beam.

[0053] exist Figure 3 In (a), after the electron beam 11 heats the surface layer to the thermal activation depth and thermal activation temperature through the heating power density, please refer to... Figure 3 (b) The surface layer in the thermally activated state is irradiated by ion beam 21 to provide tangential kinetic energy to the atoms of the surface layer, so that the atoms of the surface layer diffuse and rearrange to obtain a flattened surface layer.

[0054] exist Figure 3In (b), before determining the error type, the peaks 311 and troughs 312 of the target region 31 are simultaneously confirmed based on the appearance information. Then, based on the peaks 311 and troughs 312, the position and irradiation of the ion beam 21 are confirmed. For example, the angle α between the ion beam 21 (marked by the dashed line) and the normal of the optical material 3 (marked by the dotted line) is used to make the ion beam 21 irradiate the side of the peak 311 facing away from the trough 312, and the irradiation angle of the ion beam 21 deviates from the normal of the target region 31 by an angle α. The value of α is in the range of 10°-30°. The setting of the angle α can avoid the coaxial setting of the electron beam source 1 and the ion beam source 2, so that the individual electron beam source 1 and ion beam source 2 can be realized by assembly, reducing the difficulty of modifying the existing device; it can also make the tangential thrust provided by the ion beam 21 have a clear position and directionality, enhance the targetness and directionality of the peak 311 filling towards the trough 312, and improve the efficiency of surface planarization. The surface planarization reference after being subjected to electron beam 11 and ion beam 21 Figure 3 (c) can be understood as follows. Since the atoms of the peak 311 of the target region 31 are filled into the valley 312, the target region 31, which originally had errors, is flattened.

[0055] Optionally, before irradiating the surface with the ion beam 21, this application further confirms a third mapping relationship based on the relationship between the power density of the ion beam 21 and the atomic rearrangement rate; and confirms a preset rearrangement rate based on the error type. Simultaneously, during the planarization of the surface with the ion beam 21, the height change rate between the peaks 311 and troughs 312 is acquired in real time; based on the height change rate and the third mapping relationship, the real-time power density used to adjust the ion beam in real time is confirmed, so that the height change rate of the target region 31 during the planarization of the surface with the ion beam tends to be similar to the preset rearrangement rate. It is understood that in the third mapping relationship, the higher the power density of the ion beam 21, the higher the energy provided for driving the surface and the higher the atomic rearrangement rate; that is, the atomic rearrangement rate and power density are positively correlated.

[0056] For example: still taking quartz glass as an example, assume that the surface shape error of high-frequency error is... 120nm The preset rearrangement rate is 15nm / s First, the preset rearrangement rate and preset power density are determined based on the third mapping relationship, and the target region 31 is irradiated using the preset power density. Then, during the irradiation of the target region 31 by the ion beam 21, the height change rate between the peaks 311 and troughs 312 of the target region 31 is simultaneously detected (the unit is the same as the preset rearrangement rate, both being...). nm / s ),For example 12nm / s In order to make the rate of height change converge to the preset rearrangement rate 15nm / sBased on the relationship curve between the higher the power density of the ion beam 21 and the higher the atomic rearrangement rate, the obtained real-time power density is used to increase the preset power density so that the height change rate corresponding to the real-time power density tends to be similar to that of the ion beam 21. 15nm / s This makes the embodiments of this application use 15nm / s The rate of change of height, in 8s The left and right surface shape error is 120nm Correction for high-frequency errors. Conversely, if the rate of change in altitude is greater than... 15nm / s ,For example 18nm / s Based on the relationship curve between the higher the power density of the ion beam 21 and the higher the atomic rearrangement rate, the obtained real-time power density is used to reduce the preset power density so that the height change rate corresponding to the real-time power density tends to be similar to that of the ion beam 21. 15nm / s .

[0057] Optionally, the third mapping relationship also includes the thermal activation temperature, which determines the direction of the shift in the atomic rearrangement rate versus power density curve. The higher the thermal activation temperature, the weaker the interatomic binding, and the more the atomic rearrangement rate versus power density curve shifts towards an increasing atomic rearrangement rate; conversely, the lower the thermal activation temperature, the stronger the interatomic binding, and the more the atomic rearrangement rate versus power density curve shifts towards a decreasing atomic rearrangement rate. That is, the third mapping relationship includes multiple atomic rearrangement rate versus power density curves at different thermal activation temperatures. It is understood that for the same optical material to achieve the same atomic rearrangement rate, a higher thermal activation temperature corresponds to a lower power density. That is, when the thermal activation temperature is high, the embodiments of this application can use a lower power density ion beam 21 to drive the target region 31 to rearrange. In other words, although the embodiments of this application determine multiple atomic rearrangement rate versus power density curves through different thermal activation temperatures, the atomic rearrangement rate and power density of each curve are positively correlated.

[0058] Optionally, the relationship between atomic rearrangement rate and power density is also affected by the irradiation angle of the ion beam. This is due to the incident angle of the ion beam 21 in this embodiment. α for 10°-30°Different incident angles of the ion beam 21 also affect the shift in the relationship curve between the atomic rearrangement rate and the power density. Specifically, the tangential kinetic energy provided by the ion beam 21 is positively correlated with the incident angle; the larger the incident angle, the greater the tangential kinetic energy. However, an increased incident angle leads to a significant amount of reflection of the ion beam 21, causing the actual equivalent tangential kinetic energy to decrease. That is, the relationship curve of the equivalent tangential kinetic energy provided by the ion beam 21 includes: initially increasing with the increase of the incident angle until reaching a peak, and then gradually decreasing. Simultaneously, the greater the equivalent tangential kinetic energy, the stronger the driving force of the ion beam 21 on the atoms; that is, the atomic rearrangement rate is positively correlated with the equivalent tangential kinetic energy. Therefore, the relationship curve between the atomic rearrangement rate and the power density initially shifts towards an increasing atomic rearrangement rate with increasing incident angle, and then, after reaching the maximum shift, begins to shift towards a decreasing atomic rearrangement rate. For example: still using quartz glass as an example, under a fixed thermal activation temperature, for example: 1250℃ When the incident angle of the ion beam is 10° At that time, the tangential kinetic energy is 8.7keV The equivalent tangential kinetic energy is less affected by the incident angle, and the atomic rearrangement rate is... 2.3nm / s The angle of incidence is 15° At that time, the tangential kinetic energy is 12.9keV Based on the relationship between equivalent tangential kinetic energy and incident angle, the curve relating atomic rearrangement rate and power density initially shifts towards the direction of increasing atomic rearrangement rate, at which point the atomic rearrangement rate is... 8.6nm / s The angle of incidence is 20° At that time, the tangential kinetic energy is 17.1keV The atomic rearrangement rate shifted further to 15.2nm / s The atomic rearrangement rate reaches its maximum value; the incident angle is... 25° At that time, the tangential kinetic energy is 21.2keV Due to the significant reflection from the ion beam 21, although the tangential kinetic energy increases, the actual equivalent tangential kinetic energy begins to decrease. The curve relating the atomic rearrangement rate to the power density shifts towards a decreasing atomic rearrangement rate, with the atomic rearrangement rate decreasing to... 12.8nm / s The angle of incidence is 30° At that time, the reflection effect of the ion beam 21 is further enhanced, the equivalent tangential kinetic energy is further reduced, and the atomic rearrangement rate decreases to 9.4nm / s .

[0059] Therefore, the third mapping relationship provided in this application is also affected by the incident angle and the thermal activation temperature. The incident angle and thermal activation temperature can be used as weighting parameters to establish a relationship curve between power density and atomic rearrangement rate, thereby obtaining the corresponding preset power density at a preset rearrangement rate through the third mapping relationship. It is understood that the incident angle and thermal activation temperature determine the power density required to achieve the same atomic rearrangement rate. The incident angle is a peak-distribution type weighting parameter; at the peak of the equivalent tangential kinetic energy, it has the greatest impact on the increasing shift of the power density-atomic rearrangement rate relationship curve. Without considering other factors, the power density required to achieve the same atomic rearrangement rate is the lowest. As the equivalent tangential kinetic energy decreases from the peak towards both sides, the power density-atomic rearrangement rate relationship curve gradually decreases, and the power density required to achieve the same atomic rearrangement rate gradually increases. Similarly, the thermal activation temperature is a positively correlated type weighting parameter; the higher the thermal activation temperature, the greater the increasing shift of the power density-atomic rearrangement rate relationship curve, and the lower the power density required to achieve the same atomic rearrangement rate. Meanwhile, the third mapping relationship for other optical materials 3 can be obtained by referring to the example of quartz glass.

[0060] In some embodiments, when the ion beam is configured as an ion beam cluster, this application embodiment further determines the quantity parameter of the ion beam clusters used to irradiate the surface layer in the thermally activated state according to the error type. The quantity parameter of the ion beam clusters includes: a first number of ions, a second number of ions, and a third number of ions corresponding to low-frequency error, mid-frequency error, and high-frequency error, respectively; the second number of ions is greater than the first number of ions, and the first number of ions is greater than the third number of ions. It is understood that the ion beam 21 provided in this application is configured as a single ion beam or an ion beam cluster. A single ion beam can be generated by a conventional ion beam source, while an ion beam cluster is generated by a corresponding ion cluster source. Single ion beams are less expensive and suitable for large-scale applications, while ion beam clusters have lower kinetic energy, stronger atomic sputtering suppression, and more precise control. Meanwhile, compared to ion beam sources, ion cluster sources have a low-energy ionization region for achieving ion clustering; they also have a mass-to-charge ratio selector for selecting ion clusters with a specific number of ions. For example, if the number parameter of ion clusters is configured between 100-5000, then the second number of ions can be set to 3000-5000. That is, when the number parameter is configured to the second number of ions, the ion cluster refers to a cluster composed of 3000-5000 ions. Similarly, the first number of ions can be set to 1000-3000, and the third number of ions can be set to 500-1000. Ion clusters with different numbers of ions can be obtained by controlling the mass-to-charge ratio selector. Furthermore, when the charge parameter of the ion clusters is the same, the momentum of ion clusters with different numbers of ions is different. The momentum input per unit area of ​​the ion cluster conforms to the following formula: ; This refers to momentum input. It refers to the equivalent quality of the cluster. This refers to the incident energy, primarily the charge parameter of the ion beam cluster. In other words, the momentum input of the ion beam cluster is directly proportional to its mass. The more ion beams contained within the cluster, the larger the cluster used for surface planarization, and thus the greater the equivalent mass of the ion beam cluster. The larger the cluster, meaning the more ions in the ion beam cluster, the greater the momentum input provided by the ion beam cluster. For example: in Under constant conditions, the momentum input of an ion beam cluster with 5000 ions is greater than that of an ion beam cluster with 3000 ions. Therefore, this application controls the number parameter of the ion beam cluster to flatten high-frequency errors by forming small clusters with low momentum from a small number of ions, suppressing mid-frequency errors by pushing peaks 311 to fill troughs 312 by forming large clusters with high momentum from a large number of ions, and suppressing atomic sputtering by forming medium-sized clusters with moderate momentum from a moderate number of ions, thus achieving continuous adjustment of low-frequency errors. Therefore, this application embodiment controls the momentum input of the ion beam cluster by adjusting the number parameter of the ion beam cluster / the number of ions contained in the cluster, enabling this application to provide ion beam clusters with corresponding mass and momentum for targeted flattening for different error types, thereby improving the flattening accuracy of this application embodiment.

[0061] Further, based on the order of magnitude reduction in the flow parameters, the charge parameters of the ion beam clusters used for irradiating the thermally activated surface layer are determined. The charge parameters of the ion beam clusters include: a first charge and a second charge, wherein the second charge is greater than the first charge; when the flow parameters are reduced by one order of magnitude, the charge parameter is configured as the second charge; or, when the flow parameters are reduced by at least two orders of magnitude, the charge parameter is configured as the first charge. Similarly, according to the formula... In the equivalent mass of ion beam clusters / Equivalent charge of ion beam clusters with the ion beam constant The larger the flow parameter, the greater the momentum of the ion beam cluster. It is understandable that the flow parameter is inversely proportional to the binding force between atoms in the surface layer; the smaller the flow parameter, the weaker the binding force between atoms in the surface layer. Therefore, the greater the reduction in flow parameter by a unit order of magnitude, the weaker the binding force between atoms in the surface layer, allowing the surface atoms to be propelled by ion beam clusters with smaller momentum. This makes the application, based on the control of the first and second charge quantities, applicable to different types of optical materials 3. Since different error types exhibit better flattening effects under ion beam clusters with corresponding quantity parameters, for example, high-frequency errors, due to their minimal surface shape errors, are suitable for flattening with ion beam clusters of 500-1000 ions. When the atomic binding force of optical material 3 is strong, small-momentum ion beam clusters struggle to propel atoms. If the number of ions in the ion beam cluster is increased to 1000-3000, the excessive number of ions in the ion beam cluster may over-compress high-frequency errors, creating new troughs and hindering the flattening of high-frequency errors. In this embodiment, by adjusting the charge parameter, when the flow parameter is reduced by one unit, the momentum of the ion beam cluster, whose ion number is maintained at 500-1000, is adjusted by the second charge. This allows the momentum of the ion beam cluster to be adjusted by the charge parameter while keeping the ion number of the cluster constant. This, in turn, flattens out high-frequency errors with strong atomic binding by using clusters of the same size but with higher kinetic energy. The incident energy... The value range is 10eV-100eV, meaning the first charge can be 10eV-50eV and the second charge can be 50eV-100eV. This allows for momentum adjustment of ion beam clusters of equal size through charge parameter adjustment. Normally, optical material 3 is a material like quartz glass, which has a high melting point, a large temperature range from "glassing" to "liquid-like state," and a significant decrease in Young's modulus or viscosity coefficient. In this embodiment, increasing the thermal activation temperature of the quartz glass further weakens the interatomic binding, and then planarizes the quartz glass using ion beam clusters with the first charge. This ensures the driving effect of the quartz glass while suppressing momentum output, making the planarization of the quartz glass more reliable. However, optical materials 3 also include materials like single-crystal silicon, which have a relatively small temperature range from "glass transition" to "liquid-like state." This results in a small adjustable range for Young's modulus or viscosity coefficient within a unit order of magnitude. Even when these optical materials 3 reach their thermal activation temperature, the interatomic bonds on the surface remain strong. In this case, an ion beam cluster with a second charge can be used to increase the momentum of the ion beam cluster without changing its size. This avoids over-pushing caused by an excessively large ion beam cluster and ensures that the momentum of the ion beam cluster meets the planarization requirements for optical materials 3 like single-crystal silicon, which have strong interatomic bonds. Therefore, by adjusting the charge parameter, this application can further improve its applicability to different optical materials 3. Both the quantity parameter and the charge parameter are key parameters for determining the momentum of the ion beam cluster.

[0062] Based on the same inventive concept, embodiments of this application provide an electronic device, which includes: a memory and a processor; The memory communicates with the processor.

[0063] At least one computer program is stored in a memory. A processor executes the computer program to implement various optional embodiments of the planarization method provided in this application using an electron beam 11 and an ion beam 21. When executed by the processor, the method includes: confirming a first mapping relationship based on the relationship between the flow parameters of the optical material and temperature; confirming a thermal activation temperature based on the initial temperature and melting point of the optical material and the first mapping relationship; irradiating a target area of ​​the optical material with an electron beam to raise the temperature of the surface layer of the target area from the initial temperature to the thermal activation temperature, thereby placing the surface layer in a thermally activated state; irradiating the thermally activated surface layer with an ion beam to provide tangential kinetic energy to the atoms of the surface layer, causing the atoms of the surface layer to diffuse and rearrange, thereby obtaining a planarized surface layer; wherein the thermal activation temperature is greater than the initial temperature and less than the melting point, thereby reducing the flow parameters by at least one order of magnitude compared to the initial temperature.

[0064] Those skilled in the art will understand that the electronic devices provided in the embodiments of this application can be specifically designed and manufactured for the desired purpose, or may include known devices in general-purpose computers. These devices have computer programs stored therein that are selectively activated or reconfigured. Such computer programs can be stored in a device (e.g., computer) readable medium or in any type of medium suitable for storing electronic instructions and respectively coupled to a bus.

[0065] In one optional embodiment, this application provides an electronic device; please refer to... Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0066] Electronic device 2000 includes a processor 2001 and a memory 2003. The processor 2001 and the memory 2003 are communicatively connected, for example, via a bus 2002.

[0067] Processor 2001 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. Processor 2001 may also be a combination that implements computing functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0068] Bus 2002 may include a pathway for transmitting information between the aforementioned components. Bus 2002 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 2002 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0069] The memory 2003 may be ROM (Read-Only Memory) or other types of static storage devices capable of storing static information and instructions, RAM (Random Access Memory) or other types of dynamic storage devices capable of storing information and instructions, or EEPROM (Electrically Erasable Programmable Read Only Memory), CD-ROM (Compact Disc Read-Only Memory) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but not limited thereto.

[0070] Optionally, the electronic device 2000 may also include a communication unit 2004. The communication unit 2004 can be used for receiving and transmitting signals. The communication unit 2004 allows the electronic device 2000 to communicate wirelessly or wiredly with other devices to exchange data. It should be noted that in practical applications, the communication unit 2004 is not limited to one.

[0071] Optionally, the electronic device 2000 may further include an input unit 2005. The input unit 2005 can be used to receive input numbers, characters, images, and / or sound information, or to generate key signal inputs related to user settings and function control of the electronic device 2000. The input unit 2005 may include, but is not limited to, one or more of the following: a touchscreen, a physical keyboard, function keys (such as volume control buttons, power buttons, etc.), a trackball, a mouse, a joystick, a camera, a microphone, etc.

[0072] Optionally, the electronic device 2000 may also include an output unit 2006. The output unit 2006 can be used to output or display information processed by the processor 2001. The output unit 2006 may include, but is not limited to, one or more of a display device, a speaker, a vibration device, etc.

[0073] Although Figure 6 An electronic device 2000 with various devices is shown; however, it should be understood that it is not required to implement or possess all of the devices shown. More or fewer devices may be implemented or possessed alternatively.

[0074] Optionally, the memory 2003 is used to store a computer program for executing the scheme of this application, and the execution is controlled by the processor 2001. The processor 2001 is used to execute the computer program stored in the memory 2003 to implement any of the planarization methods provided in the embodiments of this application using electron beam 11 and ion beam 21.

[0075] The apparatus in the embodiments of this application can execute the methods provided in the embodiments of this application, and their implementation principles are similar. The actions performed by each module in the apparatus of each embodiment of this application are corresponding to the methods in each embodiment of this application. For detailed functional descriptions of each module of the apparatus, please refer to the descriptions in the corresponding methods shown above, which will not be repeated here.

[0076] Based on the same inventive concept, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by an electronic device / processor, implements various optional embodiments of any of the planarization methods provided in this application using an electron beam 11 and an ion beam 21.

[0077] Based on the same inventive concept, embodiments of this application also provide a computer program product, including a computer program that, when executed by a processor, can implement various optional implementations of any of the planarization methods provided in this application using electron beam 11 and ion beam 21.

[0078] By applying the embodiments of this application, at least the following beneficial effects can be achieved: This application abandons the subtractive smoothing process of traditional IBF technology and achieves self-leveling of the surface layer through the minimum energy law of the optical material itself, realizing non-subtractive smoothing of the optical material surface layer. This allows this application to avoid the microcracks that may be introduced by atomic sputtering in IBF technology. First, this application uses the heating effect of an electron beam to raise the temperature of the surface layer of the target area to the thermal activation temperature, causing the atomic potential wells on the surface layer to become shallower and the thermal amplitude to increase, thus making the surface layer viscous. At this point, an ion beam is used to laterally push the viscous surface layer. Based on the minimum energy law, the atoms on the surface layer will automatically diffuse and rearrange, thereby achieving automatic surface planarization without atomic sputtering, improving the operational reliability and processing accuracy of optical material planarization.

[0079] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in related technologies that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0080] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0081] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0082] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0083] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0084] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A method for planarization using electron beams and ion beams, used for processing optical materials, characterized in that, include: Based on the relationship between the flow parameters of optical materials and temperature, the first mapping relationship is confirmed; The thermal activation temperature is determined based on the initial temperature and melting point of the optical material and the first mapping relationship; By irradiating the target area of ​​the optical material with an electron beam, the temperature of the surface layer of the target area is raised from the initial temperature to the thermal activation temperature, thereby causing the surface layer to be in a thermally activated state. The surface layer in a thermally activated state is irradiated with an ion beam to provide tangential kinetic energy to the atoms of the surface layer, causing the atoms of the surface layer to diffuse and rearrange, thereby obtaining a planarized surface layer. The thermal activation temperature is greater than the initial temperature and less than the melting point, which is used to reduce the corresponding flow parameters by at least one order of magnitude compared to the initial temperature.

2. The planarization method using electron beams and ion beams according to claim 1, characterized in that, The flow parameters are configured as Young's modulus or viscosity coefficient.

3. The planarization method using electron beams and ion beams according to claim 1, characterized in that, The ion beam is configured as a single ion beam or an ion beam cluster.

4. The planarization method using electron beams and ion beams according to claim 3, characterized in that, Before irradiating the target area of ​​the optical material with an electron beam, the method further includes: Based on the relationship between the heating depth and power density of the electron beam, the second mapping relationship is confirmed; The morphological information of the optical material is acquired to locate the target region and confirm the error type of the target region. Based on the error type, the thermal activation depth of the surface layer is determined; Based on the second mapping relationship and the thermal activation depth, the heating power density of the electron beam is confirmed; The error types include low-frequency error, medium-frequency error, and high-frequency error.

5. The planarization method using electron beams and ion beams according to claim 4, characterized in that, Also includes: Based on the appearance information, the peaks and troughs of the target area are confirmed; Based on the peaks and troughs, the position and angle of the ion beam irradiation are determined, so that the ion beam irradiates the side of the peak away from the trough and deviates from the normal of the optical material by 10°-30°.

6. The planarization method using electron beams and ion beams according to claim 5, characterized in that, Before irradiating the thermally activated surface layer with an ion beam, the method further includes: confirming a third mapping relationship based on the relationship between the power density of the ion beam and the atomic rearrangement rate; and confirming a preset rearrangement rate based on the error type. The process of irradiating the surface layer in a thermally activated state with an ion beam includes: acquiring the height change rate between the peak and the trough in real time; and determining the real-time power density of the ion beam based on the height change rate and the third mapping relationship, so that the height change rate is similar to the preset rearrangement rate.

7. The planarization method using electron beams and ion beams according to claim 4, characterized in that, When the ion beam is configured as an ion beam cluster, it includes: Based on the error type, determine the quantity parameter of the ion beam clusters used for irradiating the surface layer in the thermally activated state; The quantity parameters include: a first number of ions, a second number of ions, and a third number of ions corresponding to low-frequency error, medium-frequency error, and high-frequency error, respectively; the second number of ions is greater than the first number of ions, and the first number of ions is greater than the third number of ions.

8. The planarization method using electron beams and ion beams according to claim 7, characterized in that, Based on the order of magnitude reduction in the flow parameters, the charge parameters of the ion beam clusters used for irradiating the thermally activated surface layer are determined, including: The charge parameter includes: a first charge and a second charge, wherein the second charge is greater than the first charge; when the flow parameter decreases by one order of magnitude, the charge parameter is configured as the second charge; or, when the flow parameter decreases by at least two orders of magnitude, the charge parameter is configured as the first charge.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory, characterized in that, The processor is used to execute the computer program to implement the planarization method by electron beam and ion beam according to any one of claims 1-8.

10. A device for planarization using an electron beam and an ion beam, characterized in that, include: An electron beam source is used to provide an electron beam. An ion beam source is used to provide an ion beam. Control components are respectively connected to the electron beam source and the ion beam source; The control component includes a processor for implementing the planarization method by electron beam and ion beam according to any one of claims 1-8.

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