sensor

Abstract

The magnetic sensor includes a first insulating layer and a second insulating layer, a metal layer disposed on the side of the first insulating layer opposite to the second insulating layer, and a sensor element. The functional layer of the sensor element is disposed on the side opposite to the first insulating layer, with reference to the second insulating layer. The second insulating layer has protrusions with inclined surfaces and flat portions. The first insulating layer contains a first insulating material. The second insulating layer contains a second insulating material. The breaking toughness of the second insulating material is greater than that of the metal layer.

Description

[0001] This application was filed on [date]. September 20, 2022 Application number is 202211143001.2 The invention is named sensor A divisional application of the patent application. Technical Field

[0002] This invention relates to sensors in which an insulating layer exists between a metal layer and a sensor element. Background Technology

[0003] In recent years, magnetic sensors using magnetoresistive elements have been employed in various applications. In systems incorporating magnetic sensors, it is sometimes desirable to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate using a magnetoresistive element disposed on a substrate. In such cases, by providing a soft magnetic material that converts the magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by disposing of the magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate.

[0004] Japanese Patent Application Publication No. 2006-261401 discloses a magnetic sensor having an X-axis sensor, a Y-axis sensor, and a Z-axis sensor disposed on a substrate. The magnetoresistive element constituting the Z-axis sensor is disposed on the inclined surface of a protrusion formed on the substrate base film.

[0005] In the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-261401, a wiring layer or the like is pre-formed on a substrate. The base film is composed of multiple insulating films formed on the wiring layer. As with the base film disclosed in Japanese Patent Application Publication No. 2006-261401, where an insulating layer is formed on top of a metal layer and a support member for the magnetoresistive element is formed, cracks sometimes occur in the support member during the manufacturing process of the magnetic sensor.

[0006] The aforementioned problem occurs even when there are no protrusions on the support component, provided that the requirement of forming an insulating layer on top of the metal layer is met. Furthermore, this problem is not limited to magnetic sensors but applies to all sensors on which sensor elements are formed on a support component that meets the above requirements. Summary of the Invention

[0007] The purpose of this invention is to provide a sensor in which an insulating layer exists between a metal layer and a sensor element, and to prevent cracks from forming on the insulating layer.

[0008] The sensor of the present invention is configured to detect a predetermined physical quantity. The sensor includes: a first insulating layer, a second insulating layer, and a third insulating layer, which are arranged sequentially along a first direction; a metal layer disposed on the side of the first insulating layer opposite to the second insulating layer; and a sensor element configured such that its physical properties change according to the predetermined physical quantity. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed on the side of the third insulating layer opposite to the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

[0009] In the sensor of the present invention, the first and third insulating layers each comprise a first insulating material, and the second insulating layer comprises a second insulating material. Therefore, according to the present invention, in a sensor where an insulating layer exists between a metal layer and a sensor element, cracking in the insulating layer can be prevented.

[0010] Other objects, features and advantages of the present invention will become sufficiently clear from the following description. Attached Figure Description

[0011] Figure 1 This is a perspective view of a magnetic sensor device including the magnetic sensor of the first embodiment of the present invention.

[0012] Figure 2 It means Figure 1 A top view of the magnetic sensor device shown.

[0013] Figure 3 It means Figure 1 The diagram shows the functional block diagram of the magnetic sensor device.

[0014] Figure 4 This is a circuit diagram showing the circuit structure of the first detection circuit according to the first embodiment of the present invention.

[0015] Figure 5 This is a circuit diagram showing the circuit structure of the second detection circuit according to the first embodiment of the present invention.

[0016] Figure 6 This is a circuit diagram showing the circuit structure of the third detection circuit according to the first embodiment of the present invention.

[0017] Figure 7 This is a top view showing a portion of the first chip according to the first embodiment of the present invention.

[0018] Figure 8 This is a cross-sectional view showing a portion of the first chip according to the first embodiment of the present invention.

[0019] Figure 9 This is a top view showing a portion of the second chip according to the first embodiment of the present invention.

[0020] Figure 10 This is a cross-sectional view showing a portion of the second chip according to the first embodiment of the present invention.

[0021] Figure 11 This is a side view showing the magnetoresistive effect element according to the first embodiment of the present invention.

[0022] Figure 12 This is a cross-sectional view showing a modified example of the second chip according to the first embodiment of the present invention.

[0023] Figure 13 This is a perspective view of the magnetic sensor according to the second embodiment of the present invention.

[0024] Figure 14 This is a cross-sectional view showing a portion of the magnetic sensor according to the second embodiment of the present invention.

[0025] Figure 15 This is a perspective view showing the configuration of a current sensor system including the magnetic sensor of the third embodiment of the present invention.

[0026] Figure 16 This is a cross-sectional view showing the magnetic sensor according to the third embodiment of the present invention.

[0027] Figure 17 This is a block diagram illustrating the structure of a magnetic sensor device including the magnetic sensor of the third embodiment of the present invention.

[0028] Figure 18 This is a circuit diagram showing the circuit structure of the detection circuit according to the third embodiment of the present invention. Detailed Implementation

[0029] The following description of several embodiments of the present invention relates to sensors configured to detect a predetermined physical quantity. In several embodiments, the sensor includes a sensor element configured such that its physical properties change according to the predetermined physical quantity. For example, the predetermined physical quantity may be at least one of the direction and intensity of the magnetic field of the object being detected. In this case, the sensor element may also be a magnetic detection element configured to detect a change in at least one of the direction and intensity of the magnetic field of the object. A sensor including a magnetic detection element is also called a magnetic sensor. The magnetic sensor is configured to detect at least one of the direction and intensity of the magnetic field of the object. Hereinafter, several embodiments will be described in detail using the case where the sensor is a magnetic sensor as an example.

[0030] [First Embodiment]

[0031] First, refer to Figures 1-3 The structure of a magnetic sensor device including the magnetic sensor of the first embodiment of the present invention will be described. Figure 1This is a perspective view of the magnetic sensor device 100. Figure 2 This is a top view of the magnetic sensor device 100. Figure 3 This is a functional block diagram showing the structure of the magnetic sensor device 100.

[0032] The magnetic sensor device 100 includes a magnetic sensor 1. The magnetic sensor 1 corresponds to the "sensor" of the present invention.

[0033] The magnetic sensor 1 is composed of a first chip 2 and a second chip 3. The magnetic sensor device 100 also includes a support body 4 that supports the first and second chips 2 and 3. The first chip 2, the second chip 3 and the support body 4 are all cuboid in shape. The support body 4 has a reference plane 4a as its upper surface, a lower surface located on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0034] Here, refer to Figure 1 and Figure 2 The reference coordinate system of this embodiment will be explained below. The reference coordinate system is a coordinate system based on the magnetic sensor device 100, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, specifically, the direction perpendicular to the reference plane 4a of the support body 4 and extending from the lower surface of the support body 4 towards the reference plane 4a is defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes defining the reference coordinate system are axes parallel to the X direction, axes parallel to the Y direction, and axes parallel to the Z direction.

[0035] Hereinafter, the position located in front of the reference position in the Z direction will be referred to as "above," and the position located on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the constituent elements of the magnetic sensor device 100, the surface located at one end in the Z direction will be referred to as the "upper surface," and the surface located at one end in the -Z direction will be referred to as the "lower surface." Additionally, the performance of "when viewed from the Z direction" means observing the object from a position separated in the Z direction.

[0036] The first chip 2 has an upper surface 2a and a lower surface located on opposite sides, and four side surfaces connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located on opposite sides, and four side surfaces connecting the upper surface 3a and the lower surface.

[0037] The first chip 2 is mounted on the reference plane 4a with its lower surface facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a with its lower surface facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are respectively bonded to the support 4 by, for example, adhesives 6 and 7.

[0038] The first chip 2 has a plurality of first electrode pads 21 disposed on its upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 disposed on its upper surface 3a. The support 4 has a plurality of third electrode pads 41 disposed on a reference plane 4a. Although not shown, in the magnetic sensor device 100, corresponding two electrode pads of the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41 are interconnected by bonding wires.

[0039] Here, the dimension perpendicular to the reference plane 4a is referred to as the thickness. For example... Figure 1 As shown, the thickness of the first chip 2 is the same as the thickness of the second chip 3. Furthermore, the thickness of the support 4 is greater than the thickness of the first chip 2 and the second chip 3.

[0040] The magnetic sensor 1 includes a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30.

[0041] The magnetic sensor device 100 also includes a processor 40. The support member 4 includes the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41 and a plurality of bonding wires.

[0042] The first to third detection circuits 10, 20, and 30 each include multiple magnetic detection elements, which are configured to generate at least one detection signal in response to the magnetic field of the target object. In this embodiment, in particular, the multiple magnetic detection elements are multiple magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0043] The processor 40 is configured to generate a first detection value, a second detection value, and a third detection value that correspond to the components of the magnetic field in three distinct directions at a predetermined reference position by processing multiple detection signals generated by the first to third detection circuits 10, 20, and 30. In this embodiment, specifically, the three distinct directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0044] Next, refer to Figures 3 to 10The first to third detection circuits 10, 20 and 30 will be described. Figure 4 This is a circuit diagram showing the circuit structure of the first detection circuit 10. Figure 5 This is a circuit diagram showing the circuit structure of the second detection circuit 20. Figure 6 This is a circuit diagram showing the circuit structure of the third detection circuit 30. Figure 7 This is a top view showing a portion of the first chip 2. Figure 8 This is a cross-sectional view showing a portion of the first chip 2. Figure 9 This is a top view showing a portion of the second chip 3. Figure 10 This is a cross-sectional view showing a portion of the second chip 3.

[0045] Here, as Figure 7 and Figure 9 As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, specifically, the U direction is defined as the direction rotated by α from the X direction toward the -Y direction, and the V direction is defined as the direction rotated by α from the Y direction toward the X direction. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0046] In addition, such as Figure 10 As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, specifically, the W1 direction is defined as the direction rotated by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction rotated by β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0047] The first detection circuit 10 is configured to detect the component of the magnetic field of the object in the direction parallel to the U direction, and generates at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect the component of the magnetic field of the object in the direction parallel to the W1 direction, and generates at least one second detection signal corresponding to this component. The third detection circuit 30 is configured to detect the component of the magnetic field of the object in the direction parallel to the W2 direction, and generates at least one third detection signal corresponding to this component.

[0048] like Figure 4As shown, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistors R11, R12, R13, and R14.

[0049] The first resistor R11 is located between the power supply terminal V1 and the signal output terminal E11. The second resistor R12 is located between the signal output terminal E11 and the ground terminal G1. The third resistor R13 is located between the signal output terminal E12 and the ground terminal G1. The fourth resistor R14 is located between the power supply terminal V1 and the signal output terminal E12.

[0050] like Figure 5 As shown, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0051] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0052] like Figure 6 As shown, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0053] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0054] Apply a specified voltage or current to each of the power supply terminals V1 to V3. Grounding terminals G1 to G3 are each grounded.

[0055] Hereinafter, the plurality of MR elements in the first detection circuit 10 will be referred to as a plurality of first MR elements 50A, the plurality of MR elements in the second detection circuit 20 will be referred to as a plurality of second MR elements 50B, and the plurality of MR elements in the third detection circuit 30 will be referred to as a plurality of third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are constituent elements of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50A, a plurality of second MR elements 50B, and a plurality of third MR elements 50C. Furthermore, any MR element will be designated by the symbol 50.

[0056] Figure 11 This is a side view of the MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 has: a magnetized fixed layer 52 with a fixed orientation, a magnetized free layer 54 with an orientation that can change according to the direction of the object's magnetic field, and a gap layer 53 disposed between the magnetized fixed layer 52 and the free layer 54. The MR element 50 can be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value varies according to the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetized fixed layer 52, with the resistance value being the minimum at 0° and the maximum at 180°. In each MR element 50, the free layer 54 has an anisotropic shape with its easy magnetization axis orthogonal to the magnetization direction of the magnetized fixed layer 52. As a unit that sets a predetermined direction for the free layer 54, a magnet that applies a bias magnetic field to the free layer 54 can also be used.

[0057] The MR element 50 also has an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixation layer 52, the gap layer 53, and the free layer 54 are sequentially stacked. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 52, fixing the magnetization direction of the magnetization fixation layer 52. Alternatively, the magnetization fixation layer 52 can be a so-called self-pinned fixation layer (SFP layer). A self-pinned fixation layer has a stacked ferrite structure consisting of a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, where two ferromagnetic layers are antiferromagnetically bonded together. In the case where the magnetization fixation layer 52 is a self-pinned fixation layer, the antiferromagnetic layer 51 can be omitted.

[0058] Furthermore, the arrangement of layers 51-54 in MR element 50 can also be consistent with... Figure 11 The configuration shown is reversed from top to bottom.

[0059] exist Figures 4-6 In the diagram, solid arrows indicate the magnetization direction of the magnetized fixed layer 52 of the MR element 50. Hollow arrows indicate the magnetization direction of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0060] exist Figure 4 In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R11 and R13 is the U direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R12 and R14 is the -U direction. Furthermore, the free layer 54 of each of the plurality of first MR elements 50A has an anisotropic shape with its easy magnetization axis parallel to the V direction. The magnetization direction of the free layer 54 in each of the first and second resistor sections R11 and R12 is the V direction when no target magnetic field is applied to the first MR element 50A. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R13 and R14 is the -V direction.

[0061] exist Figure 5 In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R22 and R24 is the -W1 direction. Furthermore, the free layer 54 of each of the plurality of second MR elements 50B has an anisotropic shape with its easy magnetization axis parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistor sections R21 and R22 is the U direction when no target magnetic field is applied to the second MR element 50B. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R23 and R24 is the -U direction.

[0062] exist Figure 6 In the example shown, the magnetization direction of the magnetization fixing layer 52 of the first and third resistors R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixing layer 52 of the second and fourth resistors R32 and R34 is the -W2 direction. Furthermore, the free layer 54 of each of the plurality of third MR elements 50C has an anisotropic shape with its easy magnetization axis parallel to the U direction. The magnetization direction of the free layer 54 of the first and second resistors R31 and R32 is the U direction when no target magnetic field is applied to the third MR element 50C. In the above case, the magnetization direction of the free layer 54 of the third and fourth resistors R33 and R34 is the -U direction.

[0063] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layers 54 of each of a plurality of first MR elements 50A, a plurality of second MR elements 50B, and a plurality of third MR elements 50C. In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to the free layers 54 of each of the first MR elements 50A, and a second coil 80 that applies a magnetic field in a predetermined direction to the free layers 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. A first chip 2 includes the first coil 70. A second chip 3 includes the second coil 80.

[0064] Furthermore, from the viewpoint of manufacturing precision of the MR element 50, the magnetization direction of the magnetization of the magnetization fixing layer 52 and the direction of the easy magnetization axis of the free layer 54 can be slightly deviated from the aforementioned directions. Alternatively, the magnetization of the magnetization fixing layer 52 can be configured to include a magnetization component with the aforementioned direction as the dominant component. In this case, the magnetization direction of the magnetization fixing layer 52 is the aforementioned direction or approximately the aforementioned direction.

[0065] The specific structures of the first chip 2 and the second chip 3 will be described in detail below. Figure 8 express Figure 7 A portion of the cross section at the location indicated by line 8-8.

[0066] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 205, 206, 207, 208, 209, and 210, multiple lower electrodes 61A, multiple upper electrodes 62A, multiple lower coil elements 71, and multiple upper coil elements 72. The upper surface 201a of the substrate 201 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201. Furthermore, the coil elements are part of a coil winding. In addition, since the first chip 2 is a constituent element of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes the substrate 201, insulating layers 202-210, multiple lower electrodes 61A, multiple upper electrodes 62A, multiple lower coil elements 71, and multiple upper coil elements 72.

[0067] An insulating layer 202 is disposed on a substrate 201. A plurality of lower coil elements 71 are disposed on the insulating layer 202. An insulating layer 203 is disposed on the insulating layer 202 around the plurality of lower coil elements 71. Insulating layers 204, 205, and 206 are sequentially stacked on the plurality of lower coil elements 71 and the insulating layer 203.

[0068] Multiple lower electrodes 61A are disposed on insulating layer 206. Insulating layer 207 is disposed on insulating layer 206 around the multiple lower electrodes 61A. Multiple first MR elements 50A are disposed on the multiple lower electrodes 61A. Insulating layer 208 is disposed on the multiple lower electrodes 61A and insulating layer 207 around the multiple first MR elements 50A. Multiple upper electrodes 62A are disposed on the multiple first MR elements 50A and insulating layer 208. Insulating layer 209 is disposed on insulating layer 208 around the multiple upper electrodes 62A.

[0069] An insulating layer 210 is disposed over a plurality of upper electrodes 62A and an insulating layer 209. A plurality of upper coil elements 72 are disposed over the insulating layer 210. The first chip 2 may also include an insulating layer (not shown) covering the plurality of upper coil elements 72 and the insulating layer 210. Furthermore, Figure 7 The diagram shows the insulating layer 206, multiple first MR elements 50A, and multiple upper coil elements 72 among the constituent elements of the first chip 2.

[0070] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of the plurality of lower electrodes 61A are also parallel to the XY plane. Therefore, in the above-described state, it can be said that the plurality of first MR elements 50A are arranged on a plane parallel to the XY plane.

[0071] like Figure 7 As shown, multiple first MR elements 50A are arranged side-by-side along both the U and V directions. The multiple first MR elements 50A are connected in series via multiple upper electrodes 62A and multiple lower electrodes 61A. Furthermore, when viewed from the Z direction, adjacent first MR elements 50A may or may not be offset in a direction parallel to the V direction.

[0072] Here, refer to Figure 11 This section details the connection method for multiple first MR elements 50A. Figure 11 In the diagram, symbol 61 represents the lower electrode corresponding to any MR element 50, and symbol 62 represents the upper electrode corresponding to any MR element 50. For example... Figure 11 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrode 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape, and two adjacent MR elements 50 disposed on two adjacent lower electrodes 61 along their long sides are electrically connected to each other.

[0073] Although not shown, one MR element 50 located at one end of a column of multiple MR elements 50 arranged side-by-side is connected to another MR element 50 located at one end of a column of multiple other MR elements 50 adjacent to each other in a direction intersecting the long side direction of the lower electrode 61. These two MR elements 50 are interconnected via an electrode not shown. The electrode not shown could also be an electrode connecting the lower surfaces or upper surfaces of the two MR elements 50 to each other.

[0074] exist Figure 11 When the MR element 50 shown is the first MR element 50A, Figure 11 The lower electrode 61 shown corresponds to the lower electrode 61A. Figure 11 The upper electrode 62 shown corresponds to the upper electrode 62A. Furthermore, in this case, the long side direction of the lower electrode 61 becomes parallel to the V direction.

[0075] Furthermore, in this embodiment, a laminated film comprising an antiferromagnetic layer 51, a magnetization fixing layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, an element comprising this laminated film, a lower electrode 61, and an upper electrode 62 may also be used as the MR element of this embodiment. The laminated film comprises multiple magnetic films.

[0076] Each of the plurality of upper coil elements 72 extends in a direction parallel to the Y direction. Furthermore, the plurality of upper coil elements 72 are arranged side-by-side along the X direction. In this embodiment, in particular, when viewed from the Z direction, two upper coil elements 72 overlap on each of the plurality of first MR elements 50A.

[0077] Multiple lower coil elements 71 each extend in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 71 are arranged side-by-side along the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72. Figure 7 and Figure 8 In the example shown, the dimension in the X direction of each of the plurality of lower coil elements 71 is smaller than the dimension in the X direction of each of the plurality of upper coil elements 72. Furthermore, the spacing between two adjacent lower coil elements 71 in the X direction is smaller than the spacing between two adjacent upper coil elements 72 in the X direction.

[0078] exist Figure 7 and Figure 8In the example shown, multiple lower coil elements 71 and multiple upper coil elements 72 are electrically connected to form a first coil 70 that applies a magnetic field parallel to the X-direction to the free layers 54 of each of the multiple first MR elements 50A. Alternatively, the first coil 70 may be configured to apply an X-direction magnetic field to the free layers 54 in the first and second resistive sections R11 and R12, and a -X-direction magnetic field to the free layers 54 in the third and fourth resistive sections R13 and R14. Furthermore, the first coil 70 may be controlled by the processor 40.

[0079] Next, refer to Figure 9 and Figure 10 Explain the structure of the second chip 3. Figure 10 express Figure 9 A portion of the cross section at the location indicated by the 10-10 line.

[0080] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, and 310, multiple lower electrodes 61B, multiple lower electrodes 61C, multiple upper electrodes 62B, multiple upper electrodes 62C, multiple lower coil elements 81, and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301. Furthermore, since the second chip 3 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes the substrate 301, insulating layers 302-310, multiple lower electrodes 61B, multiple lower electrodes 61C, multiple upper electrodes 62B, multiple upper electrodes 62C, multiple lower coil elements 81, and multiple upper coil elements 82.

[0081] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304, 305, and 306 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0082] Multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on insulating layer 306. Insulating layer 307 is disposed on insulating layer 306 around the multiple lower electrodes 61B and around the multiple lower electrodes 61C. Multiple second MR elements 50B are disposed on the multiple lower electrodes 61B. Multiple third MR elements 50C are disposed on the multiple lower electrodes 61C. Insulating layer 308 is disposed on the multiple lower electrodes 61B, the multiple lower electrodes 61C, and insulating layer 307 around the multiple second MR elements 50B and around the multiple third MR elements 50C. Multiple upper electrodes 62B are disposed on the multiple second MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are disposed on the multiple third MR elements 50C and insulating layer 308. Insulating layer 309 is disposed on insulating layer 308 around the multiple upper electrodes 62B and around the multiple upper electrodes 62C.

[0083] An insulating layer 310 is disposed over a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are disposed over the insulating layer 310. The second chip 3 may also include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0084] The second chip 3 includes a support member 320 supporting a plurality of second MR elements 50B and a plurality of third MR elements 50C. The support member 320 has at least one inclined surface that is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, specifically, the support member 320 is composed of insulating layers 304, 305, and 306. Furthermore, Figure 9 The supporting component 320, multiple second MR elements 50B, multiple third MR elements 50C, and multiple upper coil elements 82 are shown in the components of the second chip 3.

[0085] The support member 320 has a plurality of convex surfaces 320c extending in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 320c extends in a direction parallel to the U direction. The overall shape of each convex surface 320c is such that... Figure 10 The convex surface 320c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch shape) along a direction parallel to the U direction. In addition, multiple convex surfaces 320c are arranged side by side at predetermined intervals in a direction parallel to the V direction.

[0086] Each of the plurality of convex surfaces 320c has an upper end portion furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portions of each of the plurality of convex surfaces 320c extend in a direction parallel to the U direction. Here, focus is placed on any one of the plurality of convex surfaces 320c. The convex surface 320c includes a first inclined surface 320a and a second inclined surface 320b. The first inclined surface 320a is the surface of the convex surface 320c that is closer to the V direction side than the upper end portion of the convex surface 320c. The second inclined surface 320b is the surface of the convex surface 320c that is closer to the -V direction side than the upper end portion of the convex surface 320c. Figure 9 In the diagram, the boundaries of the first inclined surface 320a and the second inclined surface 320b are represented by dashed lines.

[0087] The upper end of the convex surface 320c can also be the boundary between the first inclined surface 320a and the second inclined surface 320b. In this case, Figure 9 The dashed line shown represents the upper end of the convex surface 320c.

[0088] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 320a and the second inclined surface 320b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross-section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 320a and the second inclined surface 320b decreases as one moves away from the upper surface 301a of the substrate 301.

[0089] In this embodiment, because there are multiple convex surfaces 320c, there are also multiple first inclined surfaces 320a and second inclined surfaces 320b. The support member 320 has multiple first inclined surfaces 320a and multiple second inclined surfaces 320b.

[0090] The support member 320 also has a flat surface 320d surrounding a plurality of convex surfaces 320c. The flat surface 320d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 320c protrudes from the flat surface 320d in the Z direction. In addition, in this embodiment, the plurality of convex surfaces 320c are arranged at predetermined intervals. Therefore, a flat surface 320d exists between two adjacent convex surfaces 320c in the V direction.

[0091] In this embodiment, the plurality of convex surfaces 320c and flat surfaces 320d are substantially formed by an insulating layer 305. That is, the insulating layer 305 includes a plurality of protrusions 305C projecting in the Z direction and flat surfaces 305D surrounding the plurality of protrusions 305C. Each of the plurality of protrusions 305C extends in a direction parallel to the U direction and has an upper surface with a shape corresponding to the convex surface 320c. In addition, the plurality of protrusions 305C are arranged side by side at predetermined intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat surface 305D is substantially constant. The insulating layer 306 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of the insulating layer 305. Thus, the upper surface of the insulating layer 306 becomes a plurality of convex surfaces 320c and flat surfaces 320d.

[0092] In addition, the insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305.

[0093] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 320a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 320b. As described above, since the first inclined surfaces 320a and 320b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Therefore, it can be said that multiple second MR elements 50B and multiple third MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The support member 320 is a member for supporting each of the multiple second MR elements 50B and the multiple third MR elements 50C as inclined relative to the XY plane.

[0094] Furthermore, in this embodiment, the first inclined surface 320a is curved. Therefore, the second MR element 50B is bent along the curved surface (first inclined surface 320a). In this embodiment, for ease of explanation, the magnetization direction of the magnetization fixing layer 52 of the second MR element 50B is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 52 of the second MR element 50B, namely the W1 direction and the -W1 direction, is also the direction of the tangent extending from the portion of the first inclined surface 320a that is in contact with the vicinity of the second MR element 50B.

[0095] Similarly, in this embodiment, the second inclined surface 320b is curved. Therefore, the third MR element 50C is bent along the curved surface (second inclined surface 320b). In this embodiment, for ease of explanation, the magnetization direction of the magnetization fixing layer 52 of the third MR element 50C is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 52 of the third MR element 50C, namely the W2 direction and the -W2 direction, is also the direction of the tangent extending from the portion of the second inclined surface 320b that is in contact with the vicinity of the third MR element 50C.

[0096] like Figure 9 As shown, a plurality of second MR elements 50B are arranged in a parallel configuration along both the U and V directions. On a first inclined surface 320a, the plurality of second MR elements 50B are arranged in a single column. Similarly, a plurality of third MR elements 50C are arranged in a parallel configuration along both the U and V directions. On a second inclined surface 320b, the plurality of third MR elements 50C are arranged in a single column. In this embodiment, the columns of the second MR elements 50B and the columns of the third MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0097] Furthermore, when viewed from the Z direction, adjacent second MR elements 50B and third MR elements 50C may or may not be offset in a direction parallel to the U direction. Similarly, when viewed from the Z direction, two adjacent second MR elements 50B sandwiching a third MR element 50C may or may not be offset in a direction parallel to the U direction. Likewise, when viewed from the Z direction, two adjacent third MR elements 50C sandwiching a second MR element 50B may or may not be offset in a direction parallel to the U direction.

[0098] Multiple second MR elements 50B are connected in series via multiple lower electrodes 61B and multiple upper electrodes 62B. The description of the connection method for the multiple first MR elements 50A also applies to the connection method for the multiple second MR elements 50B. Figure 11 In the case where the MR element 50 shown is the second MR element 50B, Figure 11 The lower electrode 61 shown corresponds to the lower electrode 61B. Figure 11 The upper electrode 62 shown corresponds to the upper electrode 62B. Furthermore, in this case, the long side direction of the lower electrode 61 becomes parallel to the U direction.

[0099] Similarly, multiple third MR elements 50C are connected in series via multiple lower electrodes 61C and multiple upper electrodes 62C. The description of the connection method for the multiple first MR elements 50A also applies to the connection method for the multiple third MR elements 50C. Figure 11In the case where the MR element 50 shown is the third MR element 50C, Figure 11 The lower electrode 61 shown corresponds to the lower electrode 61C. Figure 11 The upper electrode 62 shown corresponds to the upper electrode 62C. Furthermore, in this case, the long side direction of the lower electrode 61 becomes parallel to the U direction.

[0100] Each of the plurality of upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the plurality of upper coil elements 82 are arranged side-by-side along the X direction. In this embodiment, in particular, when viewed from the Z direction, two upper coil elements 82 overlap on each of the plurality of second MR elements 50B and the plurality of third MR elements 50C.

[0101] Multiple lower coil elements 81 each extend in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged side-by-side along the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. Figure 9 and Figure 10 In the example shown, the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82. Furthermore, the spacing between two adjacent lower coil elements 81 in the X-direction is smaller than the spacing between two adjacent upper coil elements 82 in the X-direction.

[0102] exist Figure 9 and Figure 10 In the example shown, multiple lower coil elements 81 and multiple upper coil elements 82 are electrically connected to form a second coil 80 that applies a magnetic field parallel to the X-direction to the free layers 54 of each of the multiple second MR elements 50B and the multiple third MR elements 50C. Alternatively, the second coil 80 may be configured to apply an X-direction magnetic field to the free layers 54 in the first and second resistor sections R21, R22 of the second detection circuit 20 and the first and second resistor sections R31, R32 of the third detection circuit 30, and to apply a -X-direction magnetic field to the free layers 54 in the third and fourth resistor sections R23, R24 of the second detection circuit 20 and the third and fourth resistor sections R33, R34 of the third detection circuit 30. Furthermore, the second coil 80 may also be controlled by the processor 40.

[0103] Next, the first to third detection signals will be explained. First, refer to... Figure 4The first detection signal is explained. When the intensity of the component of the object's magnetic field parallel to the U direction changes, the resistance values ​​of the resistors R11 to R14 in the first detection circuit 10 change in the following manner: the resistance values ​​of resistors R11 and R13 increase while the resistance values ​​of resistors R12 and R14 decrease, or the resistance values ​​of resistors R11 and R13 decrease while the resistance values ​​of resistors R12 and R14 increase. As a result, the potentials of the signal output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0104] Next, refer to Figure 5 The second detection signal is explained. When the intensity of the component of the object's magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 in the second detection circuit 20 change in the following manner: the resistance values ​​of resistors R21 and R23 increase, and the resistance values ​​of resistors R22 and R24 decrease; or the resistance values ​​of resistors R21 and R23 decrease, and the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and to generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0105] Next, refer to Figure 6 The third detection signal is explained. When the intensity of the component of the object's magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 in the third detection circuit 30 change in the following manner: the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change accordingly. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and to generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0106] Next, the operation of the processor 40 will be explained. The processor 40 is configured to generate a first detection value based on the first detection signals S11 and S12. The first detection value is the detection value corresponding to the component of the object's magnetic field parallel to the U direction. Hereinafter, the first detection value will be represented by the symbol Su.

[0107] In this embodiment, the processor 40 generates a first detection value Su by performing an operation that includes calculating the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The first detection value Su can be the difference S11-S12 itself, or it can be a value that has undergone specified corrections such as gain adjustment and offset adjustment on the difference S11-S12.

[0108] The processor 40 is further configured to generate a second detection value and a third detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is the detection value corresponding to the component of the object's magnetic field parallel to the V direction. The third detection value is the detection value corresponding to the component of the object's magnetic field parallel to the Z direction. Hereinafter, the symbol Sv represents the second detection value and the symbol Sz represents the third detection value.

[0109] Processor 40 generates the second and third detection values ​​Sv and Sz as follows. Processor 40 first generates value S1 by performing an operation that includes calculating the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and generates value S2 by performing an operation that includes calculating the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Then, processor 40 calculates values ​​S3 and S4 using the following formulas (1) and (2).

[0110] S3=(S2+S1) / (2cosα)…(1)

[0111] S4=(S2-S1) / (2sinα)…(2)

[0112] The second detection value Sv can be the value S3 itself, or it can be a value that has undergone specified corrections such as gain adjustment and offset adjustment on the value S3. Similarly, the third detection value Sz can be the value S4 itself, or it can be a value that has undergone specified corrections such as gain adjustment and offset adjustment on the value S4.

[0113] Next, the structural features of the magnetic sensor 1 will be described. First, referring to... Figure 8 The features related to the first chip 2 of the magnetic sensor 1 will be described. The first chip 2 includes insulating layers 204, 205, and 206 arranged sequentially along the Z direction, a lower coil element 71 as a metal layer, and a first MR element 50A as a sensor element.

[0114] Each of the first MR elements 50A comprises at least two magnetic films, namely a magnetized fixed layer 52 and a free layer 54. These two magnetic films constitute a part (main part) of the first MR element 50A. Hereinafter, these two magnetic films are referred to as functional layers. The functional layers are disposed on the side of the insulating layer 206 opposite to the insulating layer 205.

[0115] The lower coil element 71 is disposed on the side of the insulating layer 204 opposite to the insulating layer 205. The lower coil element 71 is part of the first coil 70. The lower coil element 71 is formed, for example, from Cu, Au, or Al.

[0116] Insulating layers 204 and 206 each contain a first insulating material. Insulating layer 205 contains a second insulating material. The second insulating material is different from the first insulating material. Preferably, the breaking toughness of the second insulating material is greater than that of the metal layer, i.e., the lower coil element 71. The second insulating material may also be, for example, SiO2.

[0117] Preferably, the breaking toughness of the first insulating material is greater than that of the second insulating material. The first insulating material may be, for example, Al2O3, SiN, AlN, or MgO. In particular, when the second insulating material is SiO2, Al2O3 may also be used as the first insulating material. Furthermore, it is preferable that insulating layers 204 and 206 are each formed from the same first insulating material.

[0118] The insulating layer 205 includes a flat portion with a constant dimension in the Z direction. The functional layers (magnetized fixed layer 52 and free layer 54) are disposed along this flat portion. In addition, the maximum dimension of the insulating layer 205 in the Z direction may be greater than the maximum dimension of the insulating layer 204 and the maximum dimension of the insulating layer 206 in the Z direction.

[0119] Next, refer to Figure 10 The features related to the second chip 3 of the magnetic sensor 1 will be described. The second chip 3 includes insulating layers 304, 305, and 306 arranged sequentially along the Z direction, a lower coil element 81 as a metal layer, and second and third MR elements 50B and 50C as sensor elements.

[0120] Similar to the first MR element 50A, the second and third MR elements 50B and 50C each include at least a functional layer (magnetized fixed layer 52 and free layer 54). The functional layers of the second and third MR elements 50B and 50C are disposed on the side of the insulating layer 306 opposite to the insulating layer 305.

[0121] The lower coil element 81 is disposed on the side of the insulating layer 304 opposite to the insulating layer 305. The lower coil element 81 is part of the second coil 80. The lower coil element 81 is formed, for example, from Cu, Au, or Al.

[0122] Insulating layers 304 and 306 each contain the same first insulating material as insulating layers 204 and 206. Insulating layer 305 contains the same second insulating material as insulating layer 205. Preferably, insulating layers 304 and 306 are each formed of the same first insulating material.

[0123] The insulating layer 305 includes a first portion and a second portion disposed at a different position from the first portion in a direction orthogonal to the Z direction. The maximum size of the second portion in the Z direction is greater than the maximum size of the first portion in the Z direction. In this embodiment, the flat portion 305D of the insulating layer 305 corresponds to the first portion, and the protruding portion 305C of the insulating layer 305 corresponds to the second portion.

[0124] The protrusion 305C has a first inclined surface and a second inclined surface that are inclined relative to the Z direction. The first inclined surface 320a of the support member 320 has a shape corresponding to the first inclined surface of the protrusion 305C. The second inclined surface 320b of the support member 320 has a shape corresponding to the second inclined surface of the protrusion 305C. The functional layer of the second MR element 50B is disposed along the first inclined surface of the protrusion 305C. The functional layer of the third MR element 50C is disposed along the second inclined surface of the protrusion 305C.

[0125] As described above, the protrusion 305C extends in a direction parallel to the U direction, and the lower coil element 81 extends in a direction parallel to the Y direction. Therefore, when viewed from the Z direction, the lower coil element 81 extends in a manner that intersects the boundaries of the protrusion 305C and the flat portion 305D.

[0126] Next, the function and effects of the magnetic sensor 1 in this embodiment will be explained. First, the first chip 2 will be used as an example. In this embodiment, insulating layers 204, 205, and 206 exist between the lower coil element 71 and the first MR element 50A. In magnetic sensors where an insulating layer is disposed between a metal layer and an MR element, due to the difference in materials between the metal layer and the insulating layer, cracks may sometimes occur in the insulating layer during the manufacturing process of the magnetic sensor.

[0127] In contrast, in this embodiment, by establishing a stacked structure of insulating layers 204, 205, and 206 between the lower coil element 71 and the first MR element 50A, cracks in the insulating layers 204, 205, and 206 are suppressed. Reasons for suppressing crack formation include, for example, the following: If the total thickness of the insulating layers 204, 205, and 206 is compared to the thickness of a single insulating layer, then the thickness of each of the insulating layers 204, 205, and 206 is smaller than that of a single insulating layer. Therefore, the defects contained in each of the insulating layers 204, 205, and 206 are reduced.

[0128] However, during the research process of the inventors of this application, it was discovered that the ease of crack formation varies depending on the combination of insulating materials constituting each of insulating layers 204, 205, and 206. In this embodiment, insulating layers 204 and 206 each contain a first insulating material, and insulating layer 205 contains a second insulating material. That is, in this embodiment, insulating layer 204 and insulating layer 206, formed on the lower surface side of insulating layer 205, are formed of the same insulating material. Therefore, according to this embodiment, cracks in insulating layer 205 caused by the difference in materials between the layers formed on the lower surface side and the layers formed on the upper surface side of insulating layer 205 can be suppressed.

[0129] Furthermore, in this embodiment, it is preferable that the breaking toughness value of the second insulating material is greater than the breaking toughness value of the metallic material constituting the lower coil element 71. Therefore, according to this embodiment, crack formation in the insulating layer 205 can be more effectively suppressed. Additionally, in this embodiment, it is preferable that the breaking toughness value of the first insulating material is greater than the breaking toughness value of the second insulating material. Therefore, according to this embodiment, crack formation in the insulating layers 204, 205, and 206 can be more effectively suppressed.

[0130] The description of the first chip 2 described above also applies to the second chip 3. If the insulating layers 204, 205, 206 and the lower coil element 71 in the above description of the first chip 2 are replaced with insulating layers 304, 305, 306 and the lower coil element 81, respectively, and the first MR element 50A is replaced with the second MR element 50B or the third MR element 50C, then this becomes the description of the second chip 3.

[0131] Furthermore, in the second chip 3, the insulating layer 305 has a discontinuous structure including a protrusion 305C and a flat portion 305D. In particular, in the second chip 3, the lower coil element 81 extends in a manner that intersects the boundaries of the protrusion 305C and the flat portion 305D. Therefore, the insulating layer 305 is more prone to cracking compared to insulating layers with the same structure. In contrast, according to this embodiment, by forming an insulating layer 304 on the lower surface side of the insulating layer 305 and an insulating layer 306 on the upper surface side of the insulating layer 305, cracking in the insulating layer 305 can be suppressed.

[0132] [Variation Example]

[0133] Next, refer to Figure 12 A variation of the second chip 3 in this embodiment will be described. In the variation, the overall shape of each of the plurality of protrusions 320c of the support member 320 of the second chip 3 is such that... Figure 12The triangular shape of the convex surface 320c shown is a triangular roof shape formed by moving it along a direction parallel to the U direction. Furthermore, the plurality of first inclined surfaces 320a and the plurality of second inclined surfaces 320b of the support member 320 are each plane. The plurality of first inclined surfaces 320a are each plane parallel to both the U and W1 directions. The plurality of second inclined surfaces 320b are each plane parallel to both the U and W2 directions.

[0134] Insulation layer 305 and Figure 10 Similarly, the example shown may also include multiple protrusions forming multiple convex surfaces 320c. Alternatively, the insulating layer 305 may also include multiple grooves arranged side by side in a direction parallel to the V direction. Each of the multiple grooves has a first wall surface corresponding to the first inclined surface 320a and a second wall surface corresponding to the second inclined surface 320b. A convex surface 320c is formed by the first wall surface of one groove and the second wall surface of another groove adjacent to it on the -V direction side.

[0135] In addition, Figure 12 In the example shown, each of the multiple slots also has a bottom surface corresponding to the flat surface 320d. However, each of the multiple slots may also not have a bottom surface.

[0136] [Second Implementation]

[0137] Next, refer to Figure 13 and Figure 14 The magnetic sensor of the second embodiment of the present invention will be described. Figure 13 This is a perspective view showing the magnetic sensor of this embodiment. Figure 14 This is a cross-sectional view showing a portion of the magnetic sensor in this embodiment.

[0138] The magnetic sensor 101 in this embodiment is equivalent to a sensor formed by integrating the first chip 2 and the second chip 3 of the first embodiment. For example... Figure 13 As shown, the magnetic sensor 101 has the form of a cuboid-shaped chip. The magnetic sensor 101 has an upper surface 101a and a lower surface located on opposite sides, and four side surfaces connecting the upper surface 101a and the lower surface. Additionally, the magnetic sensor 101 has multiple electrode pads disposed on the upper surface 101a.

[0139] The magnetic sensor 101 can also be installed in the first embodiment. Figure 1 and Figure 2 The magnetic sensor 101 is mounted on the reference plane 4a with its lower surface facing the reference plane 4a of the support body 4.

[0140] Additionally, the magnetic sensor 101 includes the features of the first embodiment. Figures 3-6The first to third detection circuits 10, 20, and 30, and the first and second coils 70 and 80 are shown. The structure and operation of each of the first to third detection circuits 10, 20, and 30, and the first and second coils 70 and 80, are the same as in the first embodiment. That is, the first detection circuit 10 includes a plurality of first MR elements 50A. The second detection circuit 20 includes a plurality of second MR elements 50B. The third detection circuit 30 includes a plurality of third MR elements 50C. The first coil 70 includes a plurality of lower coil elements 71 and a plurality of upper coil elements 72. The second coil 80 includes a plurality of lower coil elements 81 and a plurality of upper coil elements 82.

[0141] In addition, the magnetic sensor 101 also includes a plurality of lower electrodes 61A, 61B, 61C and a plurality of upper electrodes 62A, 62B, 62C as described in the first embodiment. The connection method of the plurality of first MR elements 50A, the plurality of second MR elements 50B and the plurality of third MR elements 50C is the same as that in the first embodiment.

[0142] like Figure 14 As shown, the magnetic sensor 101 further includes a substrate 111 having an upper surface 111a and insulating layers 112, 113, 114, 115, 116, 117, 118, 119, and 120. The upper surface 111a of the substrate 111 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 111a of the substrate 111. The insulating layer 112 is disposed on the substrate 111. In this embodiment, a plurality of lower coil elements 71 and a plurality of lower coil elements 81 are disposed on the insulating layer 112. The insulating layer 113 is disposed on the insulating layer 112 around the plurality of lower coil elements 71 and around the plurality of lower coil elements 81. The insulating layers 114, 115, and 116 are sequentially stacked on the plurality of lower coil elements 71, the plurality of lower coil elements 81, and the insulating layer 113.

[0143] In this embodiment, a plurality of lower electrodes 61A, a plurality of lower electrodes 61B, and a plurality of lower electrodes 61C are disposed on an insulating layer 116. An insulating layer 117 is disposed on the insulating layer 116 around the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the plurality of lower electrodes 61C. A plurality of first MR elements 50A are disposed on the plurality of lower electrodes 61A. A plurality of second MR elements 50B are disposed on the plurality of lower electrodes 61B. A plurality of third MR elements 50C are disposed on the plurality of lower electrodes 61C.

[0144] An insulating layer 118 is disposed above a plurality of lower electrodes 61A, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, and an insulating layer 117, surrounding a plurality of first MR elements 50A, a plurality of second MR elements 50B, and a plurality of third MR elements 50C. A plurality of upper electrodes 62A are disposed above the plurality of first MR elements 50A and the insulating layer 118. A plurality of upper electrodes 62B are disposed above the plurality of second MR elements 50B and the insulating layer 118. A plurality of upper electrodes 62C are disposed above the plurality of third MR elements 50C and the insulating layer 118. An insulating layer 119 is disposed above the insulating layer 118, surrounding the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the plurality of upper electrodes 62C.

[0145] An insulating layer 120 is disposed over a plurality of upper electrodes 62A, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 119. In this embodiment, a plurality of upper coil elements 72 and a plurality of upper coil elements 82 are disposed over the insulating layer 120. The magnetic sensor 101 may also include an insulating layer (not shown) covering the plurality of upper coil elements 72, the plurality of upper coil elements 82, and the insulating layer 120.

[0146] The magnetic sensor 101 includes a support member 130 supporting a plurality of MR elements 50. The support member 130 has at least one inclined surface that is inclined relative to the upper surface 111a of the substrate 111. In this embodiment, in particular, the support member 130 is made of insulating layers 114, 115, and 116. The support member 130 has a plurality of convex surfaces 130c extending in a direction (Z direction) away from the upper surface 111a of the substrate 111 and a flat surface 130d present around the plurality of convex surfaces 130c. The shape and arrangement of the plurality of convex surfaces 130c are the same as those of the plurality of convex surfaces 320c in the first embodiment.

[0147] Each of the plurality of convex surfaces 130c includes a first inclined surface 130a and a second inclined surface 130b. Therefore, the support member 130 has a plurality of first inclined surfaces 130a and a plurality of second inclined surfaces 130b. The shape and arrangement of the plurality of first inclined surfaces 130a are the same as those of the plurality of first inclined surfaces 320a in the first embodiment. The shape and arrangement of the plurality of second inclined surfaces 130b are the same as those of the plurality of second inclined surfaces 320b in the first embodiment.

[0148] The magnetic sensor 101 includes a first portion comprising a plurality of first MR elements 50A and a second portion comprising a plurality of second MR elements 50B and a plurality of third MR elements 50C. A plurality of convex surfaces 130c are substantially formed by portions of the insulating layer 115 belonging to the second portion. That is, the aforementioned portions of the insulating layer 115 each include a plurality of protrusions 115C projecting in the Z direction. Each of the plurality of protrusions 115C extends in a direction parallel to the U direction and has an upper surface with a shape corresponding to the convex surface 130c. Furthermore, the plurality of protrusions 115C are arranged side-by-side at predetermined intervals in a direction parallel to the V direction.

[0149] The insulating layer 115 also includes a flat portion 115D. The thickness (dimension in the Z direction) of the flat portion 115D is substantially constant. The flat surface 130d is substantially composed of the flat portion 115D in the insulating layer 115 belonging to the first part of the magnetic sensor 101, and the flat portion 115D present around the plurality of protrusions 115C in the second part of the magnetic sensor 101.

[0150] Insulating layer 116 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of insulating layer 115. Thus, the upper surface of insulating layer 116 comprises a plurality of convex surfaces 130c and flat surfaces 130d. Furthermore, insulating layer 114 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of insulating layer 115.

[0151] In this embodiment, a plurality of lower electrodes 61A are disposed on the flat surface 130d. The upper surface 111a of the substrate 111 is parallel to the XY plane, and the upper surface of each of the plurality of lower electrodes 61A is also parallel to the XY plane.

[0152] Furthermore, in this embodiment, a plurality of lower electrodes 61B are disposed on a plurality of first inclined surfaces 130a. A plurality of lower electrodes 61C are disposed on a plurality of second inclined surfaces 130b. Because the first inclined surfaces 130a and the second inclined surfaces 130b are each inclined relative to the upper surface 111a of the substrate 111, i.e., the XY plane, the upper surfaces of each of the plurality of lower electrodes 61B and the upper surfaces of each of the plurality of lower electrodes 61C are also inclined relative to the XY plane.

[0153] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0154] [Third Embodiment]

[0155] Next, the third embodiment of the present invention will be described. First, referring to... Figure 15The structure of a current sensor system including the magnetic sensor of this embodiment will be described. The magnetic sensor 410 of this embodiment is used as a current sensor to detect the value of a current flowing through a conductor. The current to be detected corresponds to a "defined physical quantity" in this invention. Figure 15 The example shown is a busbar 402 through which the current to be detected flows. A magnetic sensor 410 is positioned near the busbar 402. Hereinafter, the current to be detected will be referred to as the target current Itg. A magnetic field 403 is generated around the busbar 402 by the target current Itg. The magnetic sensor 410 is positioned at the location where the magnetic field 403 is applied.

[0156] Next, refer to Figure 16 The structure of the magnetic sensor 410 in this embodiment will be described. Figure 16 This is a cross-sectional view showing the magnetic sensor 410. The magnetic sensor 410 is a magnetically balanced current sensor. Figure 16 As shown, the magnetic sensor 410 includes a coil 411 and a detection circuit 412 comprising multiple magnetic detection elements. The coil 411 and the detection circuit 412 are integrated by multiple insulating layers described later. The magnetic sensor 410 is independent of the busbar 402.

[0157] Here, as Figure 15 and Figure 16 As shown, the X, Y, and Z directions are defined in this embodiment. In this embodiment, the... Figure 15 The direction in which the object current Itg flows is defined as the Y direction. Furthermore, regarding the components of the magnetic sensor 410, the surface located at the end in the Z direction is referred to as the "upper surface," and the surface located at the end in the -Z direction is referred to as the "lower surface."

[0158] The magnetic sensor 410 is disposed above the busbar 402 (on the Z-direction side of the busbar 402) or below the busbar 402 (on the -Z-direction side of the busbar 402). An example of the magnetic sensor 410 being disposed above the busbar 402 is shown below.

[0159] Here, the magnetic field in the magnetic field 403 generated by the target current Itg that can be detected by the detection circuit 412 is referred to as the first magnetic field H1. The coil 411 is used to generate a second magnetic field H2 that cancels out the first magnetic field H1. The multiple magnetic detection elements of the detection circuit 412 are configured to detect the combined magnetic field of the first magnetic field H1 and the second magnetic field H2 as the magnetic field to be detected (the target magnetic field), i.e., the target magnetic field. Furthermore, the detection circuit 412 is configured to generate a magnetic field detection value S corresponding to the strength of the target magnetic field. The first magnetic field H1 and the second magnetic field H2 are shown in the description below. Figure 17 middle.

[0160] In this embodiment, the directions of the first magnetic field H1, the second magnetic field H2, and the target magnetic field are all parallel to the X direction. The structure of the detection circuit 412 will be described in detail later.

[0161] like Figure 16 As shown, the magnetic sensor 410 further includes a substrate 461 having an upper surface 461a, insulating layers 462, 463, 464, 465, 466, 467, and 468, a lower coil element 411L, and an upper coil element 411U. The insulating layer 462 is disposed on the substrate 461. The lower coil element 411L is disposed on the insulating layer 462. The insulating layer 463 is disposed on the insulating layer 462 around the lower coil element 411L. The insulating layers 464, 465, and 466 are sequentially stacked on the lower coil element 411L and the insulating layer 463.

[0162] The detection circuit 412 is disposed on the insulating layer 466. The insulating layer 467 is configured to cover the detection circuit 412 and the insulating layer 466. The upper coil element 411U is disposed on the insulating layer 467. The insulating layer 468 is configured to cover the upper coil element 411U and the insulating layer 467.

[0163] The magnetic sensor 410 may also include a magnetic layer (not shown). The magnetic layer absorbs a portion of the magnetic flux generated by the object current Itg, and compared to the case without a magnetic layer, it reduces the absolute value of the first magnetic field H1. The magnetic layer may be disposed, for example, on top of the insulating layer 468.

[0164] The lower coil element 411L and the upper coil element 411U are electrically connected in a manner that constitutes coil 411. Furthermore, multiple lower coil elements 411L and multiple upper coil elements 411U may also be provided respectively.

[0165] Next, refer to Figure 17 The circuit connected to the magnetic sensor 410 will be described. The magnetic sensor 410 and the circuit connected to the magnetic sensor 410 constitute the magnetic sensor device 401. Figure 17 This is a block diagram showing the structure of the magnetic sensor device 401. (For example...) Figure 17As shown, the magnetic sensor device 401 includes a magnetic sensor 410, a feedback circuit 430, and a current detector 440. The feedback circuit 430 controls a feedback current to generate a second magnetic field H2 and causes it to flow in the coil 411 based on the detected magnetic field value S. The current detector 440 generates a detected value of the feedback current flowing through the coil 411. The current detector 440 is, for example, a resistor inserted into the current path of the feedback current. The potential difference across the resistor corresponds to the detected value of the feedback current. Hereinafter, the detected value of the feedback current generated by the current detector 440 will be referred to as the current detection value. The current detection value is proportional to the value of the target current Itg. Therefore, the current detection value is equivalent to the detected value of the target current Itg.

[0166] The feedback circuit 430 includes a feedback control circuit 431. The feedback control circuit 431 generates a feedback current controlled according to the magnetic field detection value S and supplies the feedback current to the coil 411.

[0167] Next, the structure of the detection circuit 412 will be described in detail. As described above, the detection circuit 412 includes multiple magnetic detection elements. These magnetic detection elements can be, for example, MR elements or Hall elements. MR elements can be spin-valve type MR elements or AMR (anisotropic magnetoresistive) elements. In this embodiment, specifically, the detection circuit 412 includes multiple spin-valve type MR elements 450 as multiple magnetic detection elements. The structure of each of the multiple MR elements 450 is the same as that of the MR element 50 described in the first embodiment. Each of the multiple MR elements 450 includes the magnetized fixed layer 52, the gap layer 53, and the free layer 54 described in the first embodiment. Each of the multiple MR elements 450 may also include the antiferromagnetic layer 51 described in the first embodiment.

[0168] Figure 18 This is a circuit diagram showing the circuit structure of the detection circuit 412. The detection circuit 412 includes a power supply terminal V4, a ground terminal G4, two signal output terminals E41 and E42, a differential detector 421, a first resistor R41, a second resistor R42, a third resistor R43, and a fourth resistor R44.

[0169] The first resistor R41 is located between the power supply terminal V4 and the signal output terminal E41. The second resistor R42 is located between the signal output terminal E41 and the ground terminal G4. The third resistor R43 is located between the signal output terminal E42 and the ground terminal G4. The fourth resistor R44 is located between the power supply terminal V4 and the signal output terminal E42. A specified voltage or current is applied to the power supply terminal V4. The ground terminal G4 is grounded.

[0170] Each of the first to fourth resistive sections R41 to R44 includes at least one MR element 450. The magnetization direction of the magnetization fixing layer 52 in each of the first and third resistive sections R41 and R43 is a first magnetization direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistive sections R42 and R44 is a second magnetization direction opposite to the first magnetization direction. Here, the direction parallel to the first and second magnetization directions is referred to as the magnetization direction. The free layer 54 of the MR element 450 preferably has a shape anisotropy with a direction orthogonal to the magnetization direction as the easy axis of magnetization.

[0171] The detection circuit 412 is subjected to a magnetic field 403 generated by the object current Itg and a magnetic field generated by the coil 411. The detection circuit 412 is positioned such that the directions of the two applied magnetic fields are opposite or substantially opposite to each other, and is arranged in an orientation in which the magnetic sensing direction is parallel or substantially parallel to the directions of the two applied magnetic fields.

[0172] In this example, the component of the magnetic field in the direction of induction generated by the object current Itg and applied to the magnetic field of the detection circuit 412 is the first magnetic field H1. Furthermore, the component of the magnetic field in the direction of induction generated by the coil 411 and applied to the magnetic field of the detection circuit 412 is the second magnetic field H2.

[0173] As described above, the directions of the first magnetic field H1 and the second magnetic field H2 are parallel to the X direction. In this case, as... Figure 18 As shown, the detection circuit 412 is configured with the first magnetization direction being the X direction and the second magnetization direction being the -X direction. Furthermore, from the viewpoint of manufacturing precision of the MR element 450 and alignment precision of the detection circuit 412, the first and second magnetization directions may be slightly deviated from the aforementioned directions. Additionally, the magnetization of the magnetization fixing layer 52 may be configured to include a magnetization component with the first or second magnetization direction as the dominant component.

[0174] In the detection circuit 412, the potential difference between signal output terminals E41 and E42 varies according to the strength of the object's magnetic field. The differential detector 421 outputs the signal corresponding to the potential difference between signal output terminals E41 and E42 as the magnetic field detection value S. Depending on the relationship between the magnitudes of the first magnetic field H1 and the second magnetic field H2, the strength of the object's magnetic field, the potential difference between signal output terminals E41 and E42, and the magnetic field detection value S can be positive or negative.

[0175] Next, refer to Figure 16 The structural features of the magnetic sensor 410 will be described. The magnetic sensor 410 includes insulating layers 464, 465, and 466 arranged sequentially along the Z direction, a lower coil element 411L as a metal layer, and an MR element 450 as a sensor element.

[0176] Each MR element 450, like the first MR element 50A in the first embodiment, includes at least a functional layer (magnetization fixation layer 52 and free layer 54). The functional layer is disposed on the side of the insulating layer 466 opposite to the insulating layer 465.

[0177] The lower coil element 411L is disposed on the side of the insulating layer 464 opposite to the insulating layer 465. The lower coil element 411L is a part of the coil 411. The lower coil element 411L is formed, for example, from Cu, Au, or Al.

[0178] Insulating layers 464 and 466 each contain a first insulating material, similar to insulating layers 204 and 206 in the first embodiment. Insulating layer 465 contains a second insulating material, similar to insulating layer 205 in the first embodiment. The second insulating material is different from the first insulating material. Preferably, insulating layers 464 and 466 are each formed from the same first insulating material.

[0179] The insulating layer 465 includes a flat portion with a constant dimension in the Z direction. The functional layers (magnetized fixed layer 52 and free layer 54) are disposed along this flat portion. In addition, the maximum dimension of the insulating layer 465 in the Z direction may be greater than the maximum dimension of the insulating layer 464 and the maximum dimension of the insulating layer 466 in the Z direction.

[0180] Insulating layers 464, 465, and 466 correspond to insulating layers 204, 205, and 206 in the first embodiment, lower coil element 411L corresponds to lower coil element 71 in the first embodiment, and MR element 450 corresponds to the first MR element 50A in the first embodiment. Based on the same reasons explained in the first embodiment, this embodiment can suppress the formation of cracks in insulating layers 464, 465, and 466.

[0181] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0182] Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made. For example, the metal layer of the present invention is not limited to the lower coil element, but can be any wiring layer. In addition, the magnetic detection element is not limited to MR elements, but can be elements such as Hall elements that detect magnetic fields other than MR elements.

[0183] Alternatively, the second insulating material can also be spin-coated glass or a resin material such as polyimide. In this case, because the insulating layer containing the second insulating material can be elastically deformed, cracks in the insulating layer can be suppressed.

[0184] Furthermore, the sensor element of the present invention is not limited to a magnetic detection element, but can also be a sensor element configured such that its physical properties change according to a predetermined physical quantity. The predetermined physical quantity is not limited to a magnetic field, but can include quantities representing the state of any object that can be detected by the sensor element, such as electric fields, temperature, displacement, and force. As described in the above embodiments, if the magnetic detection element is replaced with a sensor element, it can also be applied to sensors other than magnetic sensors that have sensor elements other than magnetic detection elements. In this case, the functional layer can be at least a portion constituting the sensor element, or it can be a portion whose physical properties change according to a predetermined physical quantity. Additionally, in this case, the metal layer can also be any wiring layer.

[0185] As described above, the sensor of the present invention is configured to detect a predetermined physical quantity. The sensor includes a first insulating layer, a second insulating layer, and a third insulating layer arranged sequentially along a first direction; a metal layer disposed in the first insulating layer on the side opposite to the second insulating layer; and a sensor element configured such that its properties change according to the predetermined physical quantity. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed in the third insulating layer on the side opposite to the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

[0186] In the sensor of the present invention, the second insulating layer may also include a first portion and a second portion disposed at a different position from the first portion in a second direction orthogonal to the first direction. The maximum size of the second portion in the first direction may also be larger than the maximum size of the first portion in the first direction. The second portion may also have an inclined surface inclined relative to the first direction. The functional layer may also be disposed along the inclined surface. When viewed from the first direction, the metal layer may also extend in a manner that intersects the boundary between the first portion and the second portion.

[0187] Furthermore, in the sensor of the present invention, the second insulating layer may also include a flat portion with a constant size in the first direction. The functional layer may also be configured along the flat portion.

[0188] Furthermore, in the sensor of the present invention, the breaking toughness value of the second insulating material can also be greater than that of the metal layer. The second insulating material can also be SiO2.

[0189] Alternatively, in the sensor of the present invention, the second insulating material may also be a resin material.

[0190] Furthermore, in the sensor of the present invention, the breaking toughness value of the first insulating material can also be greater than that of the second insulating material. In this case, the first insulating material can also be Al2O3, and the second insulating material can also be SiO2.

[0191] Furthermore, in the sensor of the present invention, the maximum size of the second insulating layer in the first direction may also be greater than the maximum size of the first insulating layer in the first direction and the maximum size of the third insulating layer in the first direction.

[0192] Furthermore, in the sensor of the present invention, the specified physical quantity may also be at least one of the direction and intensity of the magnetic field of the object being detected. The sensor element may also be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the magnetic field of the object. The magnetic detection element may also be a magnetoresistive element. The functional layer may also include multiple magnetic films.

[0193] Furthermore, in the sensor of the present invention, the metal layer may also be part of the coil. The specified physical quantity may also be the current flowing through the conductor. The coil may also be configured to generate a second magnetic field to counteract the first magnetic field generated by the current. The sensor element may also be a magnetic detection element configured to detect the combined magnetic field of the first and second magnetic fields.

[0194] Based on the above description, it can be seen that various methods and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can be implemented even in forms other than the preferred form described above.

Claims

1. A sensor configured to detect a physical quantity, characterized in that, have: A first insulating layer and a second insulating layer are arranged sequentially along a first direction; A metal layer disposed on the side of the first insulating layer opposite to the second insulating layer; A sensor element whose physical properties change according to the physical quantity stated herein. The sensor element includes a functional layer that constitutes at least a portion of the sensor element. The functional layer is disposed in the first direction on a side opposite to the first insulating layer, with the second insulating layer as a reference. The second insulating layer has an inclined surface that is tilted relative to the first direction and a flat portion with a constant size in the first direction. The first insulating layer comprises a first insulating material. The second insulating layer comprises a second insulating material. The breaking toughness of the second insulating material is greater than that of the metal layer.

2. The sensor according to claim 1, characterized in that, The second insulating material is SiO2.

3. The sensor according to claim 1, characterized in that, The second insulating material is a resin material.

4. The sensor according to claim 1, characterized in that, The breaking toughness of the first insulating material is greater than that of the second insulating material.

5. The sensor according to claim 4, characterized in that, The first insulating material is Al2O3. The second insulating material is SiO2.

6. The sensor according to any one of claims 1 to 5, characterized in that, The physical quantity is at least one of the direction and strength of the magnetic field of the object being detected. The sensor element is configured as a magnetic detection element that detects changes in at least one of the direction of the magnetic field of the object and the intensity of the magnetic field of the object.

7. The sensor according to claim 6, characterized in that, The magnetic detection element is a magnetoresistive element. The functional layer contains multiple magnetic films.

8. The sensor according to any one of claims 1 to 5, characterized in that, The metal layer is part of the coil.

9. The sensor according to claim 8, characterized in that, The physical quantity mentioned is the current flowing through the conductor. The coil is configured to generate a second magnetic field to counteract the first magnetic field generated by the current. The sensor element is a magnetic detection element configured to detect the combined magnetic field of the first magnetic field and the second magnetic field.

10. A sensor configured to detect a physical quantity, characterized in that, have: A first insulating layer and a second insulating layer are arranged sequentially along a first direction; A metal layer disposed on the side of the first insulating layer opposite to the second insulating layer; A sensor element whose physical properties change according to the physical quantity stated herein. The sensor element includes a functional layer that constitutes at least a portion of the sensor element. The functional layer is disposed on the side opposite to the first insulating layer, with the second insulating layer as a reference. The second insulating layer includes a first portion and a second portion disposed at a different position from the first portion in a second direction orthogonal to the first direction. The maximum size of the second portion in the first direction is greater than the maximum size of the first portion in the first direction.

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