Micro LED display device and manufacturing method thereof

Abstract

This invention relates to a micro-LED display device and its manufacturing method, belonging to the field of semiconductor display technology. By forming a first encapsulation layer on a temporary carrier board, the first encapsulation layer encapsulates a plurality of micro-LED units. The first encapsulation layer is patterned to form a plurality of first through-holes exposing the temporary carrier board, such that there is a first through-hole between adjacent micro-LED units. A first magnetic pillar is formed in the first through-hole. Through this arrangement, the plurality of micro-LED units become a single unit, and a magnetic pillar is provided between adjacent micro-LED units. On the one hand, the multiple micro-LED units can be directly transferred to the driving substrate, greatly reducing the number of transfers and lowering the difficulty of precision control. On the other hand, the first magnetic pillar enables precise alignment, improving transfer accuracy.

Description

Technical Field

[0001] This invention relates to the field of semiconductor display technology, and more specifically to a micro-LED display device and its manufacturing method. Background Technology

[0002] The display principle of micro LED display devices is to thin, miniaturize, and array the structure of light-emitting diodes, then transfer the micro LED chips in batches onto a driving circuit substrate made using PCB, flexible PCB, and CMOS / TFT integrated circuit processes, and then use physical vapor deposition and / or chemical vapor deposition processes to complete the preparation of the protective layer and the top electrode. Finally, the top substrate is packaged to obtain the micro LED display device.

[0003] In the fabrication process of micro-LED display devices, the mass transfer of micro-LED chips is required. The purpose of mass transfer is to attach and fix multiple micro-LED chips to predetermined positions on the light-emitting substrate. In mass transfer technology, since the size of light-emitting diodes is as small as the pixel level of micro-LEDs, and tens of millions of chips need to be transferred, the process difficulty related to transfer efficiency, alignment accuracy, and yield increases. How to improve the process steps of mass transfer, thereby reducing transfer costs and improving transfer yield, is a key technology that urgently needs to be solved. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a micro LED display device and its manufacturing method.

[0005] To achieve the above objectives, the present invention provides a method for manufacturing a micro-LED display device, comprising: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer.

[0006] The light-emitting epitaxial wafer is cut to form multiple micro-LED units, and each micro-LED unit is etched to form a micro-LED unit that is asymmetrical along the centerline.

[0007] Next, a first electrode is formed on each of the microLED units.

[0008] Multiple asymmetrical microLED units along the midline are placed in a suspension, and a temporary carrier plate is provided. The temporary carrier plate has multiple first grooves, the shape of which matches the shape of the microLED units, so that the suspension flows through the temporary carrier plate, thereby causing a portion of each microLED unit to be embedded in one of the first grooves.

[0009] Next, a first encapsulation layer is formed on the temporary carrier, which encapsulates the microLED unit.

[0010] The first encapsulation layer is then patterned to form a plurality of first through holes that expose the temporary carrier, such that there is one first through hole between adjacent microLED units.

[0011] A first magnetic column is formed in the first through hole.

[0012] Next, the first encapsulation layer is planarized to expose the first electrode of each microLED unit.

[0013] A driving substrate is provided, on which a plurality of second electrodes are formed, and a second magnetic post is formed between each adjacent second electrode.

[0014] The plurality of microLED units on the temporary carrier are transferred to the driving substrate, such that each of the first magnetic pillars is magnetically attracted to the corresponding second magnetic pillar.

[0015] After the temporary carrier is peeled off, a second encapsulation layer is formed. Then, a planarization process is performed to remove part of the second encapsulation layer and the growth substrate of the microLED unit, and to form a common electrode that electrically connects the multiple microLED units.

[0016] As a preferred technical solution, after each of the first magnetic pillars and the corresponding second magnetic pillars are magnetically adsorbed, heat treatment is performed to electrically connect the first electrode and the corresponding second electrode of each microLED unit.

[0017] As a preferred technical solution, the epitaxial functional layer includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer.

[0018] As a preferred technical solution, the ratio of the depth of the first groove to the thickness of the microLED unit is 0.6-0.8.

[0019] As a preferred technical solution, after planarizing the first encapsulation layer, a cavity is formed on the surface of each of the first magnetic pillars.

[0020] As a preferred technical solution, when forming the second magnetic pillar between adjacent second electrodes, each second magnetic pillar has a protruding structure, so that when each first magnetic pillar is magnetically attracted to the corresponding second magnetic pillar, the protruding structure of each second magnetic pillar is embedded into the cavity of the first magnetic pillar.

[0021] As a preferred technical solution, the upper surface of the second electrode is flush with the upper surface of the driving substrate, and a plurality of second blind holes are formed on the driving substrate, thereby forming a second magnetic pillar in each second blind hole, wherein the aperture of the second blind hole is larger than the aperture of the first through hole.

[0022] As a preferred technical solution, after the temporary carrier board is peeled off and before the second encapsulation layer is formed, an annular groove is formed on the periphery of the first encapsulation layer to expose the driving substrate, so that during the formation of the second encapsulation layer, a portion of the second encapsulation layer is embedded in the first encapsulation layer.

[0023] The present invention also proposes a microLED display device, which is prepared by the above-described manufacturing method for microLED display devices.

[0024] The beneficial effects of this invention are as follows: In the manufacturing method of the micro-LED display device of the present invention, by designing the micro-LED unit to be asymmetrical along the center line, and then transferring the asymmetrical micro-LED unit to the temporary carrier plate, the temporary carrier plate is provided with a plurality of first grooves, the shape of the first grooves matching the shape of the micro-LED unit. When the micro-LED unit is transferred to the first groove using a suspension, the front and back sides of the micro-LED unit can be effectively distinguished. The reverse micro-LED unit cannot be embedded in the first groove, thereby improving the accuracy and efficiency of the temporary transfer. Furthermore, by precisely adjusting the net distance between adjacent first grooves, a plurality of micro-LED units on the temporary carrier plate can be directly transferred to the driving substrate, greatly improving the transfer efficiency.

[0025] Secondly, by forming a first encapsulation layer on a temporary carrier board, the first encapsulation layer encapsulates multiple microLED units, and the first encapsulation layer is patterned to form multiple first through holes exposing the temporary carrier board, such that there is a first through hole between adjacent microLED units, and a first magnetic pillar is formed in the first through hole. Through the above configuration, multiple microLED units become a whole, and a magnetic pillar is set between adjacent microLED units. On the one hand, the whole multiple microLED units can be directly transferred to the driving substrate, greatly reducing the number of transfers and reducing the difficulty of precision control. On the other hand, the setting of the first magnetic pillar can achieve precise alignment and improve transfer accuracy. Attached Figure Description

[0026] Figure 1 The diagram shown is a schematic representation of the structure of the light-emitting epitaxial wafer in an embodiment of the present invention.

[0027] Figure 2The diagram shown is a schematic representation of a structure forming multiple micro-LED units in an embodiment of the present invention.

[0028] Figure 3 The diagram shown is a structural schematic of a temporary carrier plate in an embodiment of the present invention.

[0029] Figure 4 The diagram shows a schematic of a micro-LED unit embedded in a first groove in an embodiment of the present invention.

[0030] Figure 5 The diagram shown is a schematic diagram of the structure forming the first encapsulation layer in an embodiment of the present invention.

[0031] Figure 6 The diagram shown is a schematic representation of the structure of the driving substrate in an embodiment of the present invention.

[0032] Figure 7 The diagram shows a structural schematic of transferring multiple micro-LED units to a driving substrate in an embodiment of the present invention.

[0033] Figure 8 The diagram shown is a schematic diagram of the structure forming the second encapsulation layer in an embodiment of the present invention. Detailed Implementation

[0034] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0035] like Figures 1 to 8 As shown, this embodiment provides a method for manufacturing a micro-LED display device, including: like Figure 1 As shown, a light-emitting epitaxial wafer 100 is provided, the light-emitting epitaxial wafer including a growth substrate 101 and an epitaxial functional layer 102.

[0036] In a specific embodiment, the epitaxial functional layer 102 includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer.

[0037] In a specific embodiment, the growth substrate 101 can be any suitable substrate such as a sapphire substrate. Then, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer are epitaxially grown using the MOCVD process to serve as the epitaxial functional layer 102. More specifically, before growing the epitaxial functional layer 102, a buffer layer (not shown) can be pre-grown on the growth substrate 101.

[0038] In a specific embodiment, the N-type semiconductor layer and the P-type semiconductor layer are respectively an n-type gallium nitride layer and a p-type gallium nitride layer, while the quantum well light-emitting layer is an alternating InGaN quantum well layer and a GaN quantum barrier layer.

[0039] like Figure 2 As shown, the light-emitting epitaxial wafer 100 is cut to form a plurality of micro-LED units 200, and each micro-LED unit 200 is etched to form a micro-LED unit 200 asymmetrical along the centerline.

[0040] In a specific embodiment, a carrier substrate 300 may be provided, on which the light-emitting epitaxial wafer 100 is disposed, and then a plurality of microLED units 200 are formed by mechanical cutting or laser cutting, and then asymmetrical microLED units 200 along the centerline are formed by wet etching or dry etching.

[0041] like Figure 2 As shown, a first electrode 201 is then formed on each of the microLED units 200.

[0042] In a specific embodiment, during the process of forming the first electrode 201 on each microLED unit 200, the first electrode 201 is formed by thermal evaporation, magnetron sputtering, electroplating or chemical plating processes, and the material of the first electrode 201 is one or more of copper, aluminum, silver, titanium, gold and palladium.

[0043] like Figure 3 As shown, a temporary carrier plate 400 is provided, the temporary carrier plate 400 having a plurality of first grooves 401, the shape of the first grooves 401 matching the shape of the microLED unit 200.

[0044] In a specific embodiment, the temporary carrier plate 400 can be any suitable rigid material such as glass, ceramic, or resin.

[0045] like Figure 4 As shown, multiple asymmetrical micro-LED units 200 along the midline are placed in a suspension, such that when the suspension flows through the temporary carrier plate 400, a portion of each micro-LED unit 200 is embedded in a first groove 401.

[0046] In a specific embodiment, the ratio of the depth of the first groove 401 to the thickness of the microLED unit 200 is 0.6-0.8. Preferably, before transferring the microLED unit 200, a release agent is coated on the surface of the first groove 401 of the temporary carrier plate 400 to facilitate the subsequent peeling of each microLED unit 200.

[0047] like Figure 5 As shown, a first encapsulation layer 500 is then formed on the temporary carrier plate 400, and the first encapsulation layer 500 encapsulates the microLED unit 200.

[0048] In a specific embodiment, the first encapsulation layer 500 can be any suitable resin material such as epoxy resin, silicone resin, or polyimide, and can be formed by processes such as injection molding, transfer molding, hot pressing, spin coating, or spraying.

[0049] like Figure 5 As shown, the first encapsulation layer 500 is then patterned to form a plurality of first through holes 501 that expose the temporary carrier, such that there is a first through hole 501 between adjacent micro LED units 200.

[0050] In specific implementation, the first through hole 501 is formed by laser drilling process.

[0051] like Figure 5 As shown, a first magnetic post 502 is formed in the first through hole 501.

[0052] In a specific embodiment, the process for forming the first magnetic pillar 502 in the first through-hole 501 is as follows: a magnetic resin material is formed in the first through-hole 501 by spin coating, spraying, or slot coating to obtain the first magnetic pillar 502. The magnetic resin material contains hard magnetic particles or semi-hard magnetic particles, more specifically, it may contain neodymium iron boron particles, cobalt-platinum alloy particles, or ferrite particles. Then, a pre-curing treatment is performed to place the first magnetic pillar 502 in a semi-cured state. Next, the first magnetic pillar 502 is directionally magnetized in a magnetic field environment. While maintaining the magnetic field, the first magnetic column 502 is cured. Specifically, the curing process involves pre-curing at 90–110°C for 5–10 minutes, followed by high-temperature curing at 160–200°C in a nitrogen atmosphere for 40–100 minutes. More specifically, it involves pre-curing at 100°C for 8 minutes, followed by high-temperature curing at 180°C in a nitrogen atmosphere for 70 minutes, ensuring complete cross-linking and curing of the resin material in the first magnetic column 502. After naturally cooling to room temperature while maintaining the magnetic field environment, the first magnetic column 502 acquires magnetic properties.

[0053] like Figure 5 As shown, the first encapsulation layer 500 is then planarized to expose the first electrode 201 of each of the microLED units 200.

[0054] In a specific embodiment, the first encapsulation layer 500 is planarized using a chemical mechanical polishing process.

[0055] In a specific embodiment, after planarizing the first encapsulation layer 500, a cavity 5021 is formed on the surface of each of the first magnetic pillars 502. The cross-section of the cavity 5021 can be rectangular, arc-shaped, or semi-circular. More specifically, the cavity 5021 can be formed by laser ablation.

[0056] like Figure 6 As shown, a driving substrate 600 is provided, on which a plurality of second electrodes 601 are formed, and a second magnetic post 602 is formed between adjacent second electrodes 601.

[0057] In a specific embodiment, the second electrode 601 is formed by thermal evaporation, magnetron sputtering, electroplating or chemical plating processes, and the material of the second electrode 601 is one or more of copper, aluminum, silver, titanium, gold and palladium.

[0058] In a specific embodiment, when the second magnetic pillar 602 is formed between adjacent second electrodes 601, each second magnetic pillar 602 has a protrusion structure 6021. Then, when each first magnetic pillar 502 is magnetically attracted to the corresponding second magnetic pillar 602, the protrusion structure 6021 of each second magnetic pillar 602 is embedded in the cavity 5021 of the first magnetic pillar 502.

[0059] In a specific embodiment, the upper surface of the second electrode 601 is flush with the upper surface of the driving substrate 600, and a plurality of second blind holes 603 are formed on the driving substrate 600, thereby forming a second magnetic pillar 602 in each second blind hole 603, wherein the aperture of the second blind hole 603 is larger than the aperture of the first through hole 501.

[0060] In a specific embodiment, the second blind hole 603 is formed by a wet etching process or a dry etching process.

[0061] In a specific embodiment, the process of forming a second magnetic pillar 602 in each second blind hole 603 is as follows: A magnetic resin material is formed in the second blind hole 603 through a spin coating process, a spray coating process, or a slot coating process to obtain the second magnetic pillar 602, and the second magnetic pillar 602 has a protruding structure 6021. The magnetic resin material contains hard magnetic particles or semi-hard magnetic particles, more specifically, it may contain neodymium iron boron particles, cobalt-platinum alloy particles, or ferrite particles. Then, a pre-curing treatment is performed, so that the second magnetic pillar 602 is in a semi-cured state. Next, the second magnetic pillar 602 is directionally magnetized in a magnetic field environment, while maintaining the magnetic field without removal. Under the premise of this, the second magnetic column 602 is subjected to a curing treatment. The curing treatment is specifically as follows: first, pre-curing at 90-110℃ for 5-10 minutes, and then high-temperature curing at 160-200℃ in a nitrogen atmosphere for 40-100 minutes. More specifically, first, pre-curing at 100℃ for 8 minutes, and then high-temperature curing at 180℃ in a nitrogen atmosphere for 70 minutes, so that the resin material of the second magnetic column 602 is completely cross-linked and cured. Then, after naturally cooling to room temperature under the magnetic field environment, the second magnetic column 602 becomes magnetic, and the magnetic field direction of the second magnetic column 602 is opposite to the magnetic field direction of the first magnetic column 502, so that the two can be magnetically attracted together.

[0062] like Figure 7 As shown, multiple microLED units 200 on the temporary carrier plate 400 are transferred to the driving substrate 600, such that each first magnetic post 502 is magnetically attracted to the corresponding second magnetic post 602, thereby causing the protrusion structure 6021 of the second magnetic post 602 to be embedded in the cavity 5021 on the surface of the first magnetic post 502.

[0063] In a specific embodiment, after each of the first magnetic pillars 502 and the corresponding second magnetic pillars 602 are magnetically attracted, heat treatment is performed to make the first electrode 201 of each microLED unit 200 electrically connected to the corresponding second electrode 601.

[0064] like Figure 8 As shown, after the temporary carrier plate 400 is peeled off, a second encapsulation layer 700 is formed. Then, a planarization process is performed to remove part of the second encapsulation layer 700 and the growth substrate 101 of the microLED unit 200, and to form a common electrode 800 that electrically connects the multiple microLED units 200.

[0065] In a specific embodiment, after the temporary carrier plate 400 is peeled off and before the second encapsulation layer 700 is formed, an annular groove 5001 is formed at the periphery of the first encapsulation layer 500 to expose the driving substrate 600, thereby embedding a portion of the second encapsulation layer 700 into the first encapsulation layer 500 during the formation of the second encapsulation layer 700.

[0066] In a specific embodiment, the second encapsulation layer 700 can be any suitable resin material such as epoxy resin, silicone resin, or polyimide, and is formed by processes such as injection molding, transfer molding, hot pressing, spin coating, or spraying. The common electrode 800 is a transparent conductive electrode, which can be any suitable transparent conductive material such as ITO, FTO, or IZO, and is formed by processes such as magnetron sputtering.

[0067] like Figure 8 As shown, the present invention also proposes a microLED display device, which is prepared by the above-described manufacturing method for microLED display devices.

[0068] In other preferred technical solutions, the present invention provides a method for manufacturing a micro-LED display device, comprising: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer.

[0069] The light-emitting epitaxial wafer is cut to form multiple micro-LED units, and each micro-LED unit is etched to form a micro-LED unit that is asymmetrical along the centerline.

[0070] Next, a first electrode is formed on each of the microLED units.

[0071] Multiple asymmetrical microLED units along the midline are placed in a suspension, and a temporary carrier plate is provided. The temporary carrier plate has multiple first grooves, the shape of which matches the shape of the microLED units, so that the suspension flows through the temporary carrier plate, thereby causing a portion of each microLED unit to be embedded in one of the first grooves.

[0072] Next, a first encapsulation layer is formed on the temporary carrier, which encapsulates the microLED unit.

[0073] The first encapsulation layer is then patterned to form a plurality of first through holes that expose the temporary carrier, such that there is one first through hole between adjacent microLED units.

[0074] A first magnetic column is formed in the first through hole.

[0075] Next, the first encapsulation layer is planarized to expose the first electrode of each microLED unit.

[0076] A driving substrate is provided, on which a plurality of second electrodes are formed, and a second magnetic post is formed between each adjacent second electrode.

[0077] The plurality of microLED units on the temporary carrier are transferred to the driving substrate, such that each of the first magnetic pillars is magnetically attracted to the corresponding second magnetic pillar.

[0078] After the temporary carrier is peeled off, a second encapsulation layer is formed. Then, a planarization process is performed to remove part of the second encapsulation layer and the growth substrate of the microLED unit, and to form a common electrode that electrically connects the multiple microLED units.

[0079] In a more preferred technical solution, after each of the first magnetic pillars and the corresponding second magnetic pillars are magnetically attracted, heat treatment is used to electrically connect the first electrode of each microLED unit to the corresponding second electrode.

[0080] In a more preferred technical solution, the epitaxial functional layer includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer.

[0081] In a more preferred technical solution, the ratio of the depth of the first groove to the thickness of the microLED unit is 0.6-0.8.

[0082] In a better technical solution, after planarizing the first encapsulation layer, a cavity is formed on the surface of each of the first magnetic pillars.

[0083] In a more preferred technical solution, when the second magnetic pillar is formed between adjacent second electrodes, each second magnetic pillar has a protruding structure, and when each first magnetic pillar is magnetically attracted to the corresponding second magnetic pillar, the protruding structure of each second magnetic pillar is embedded into the cavity of the first magnetic pillar.

[0084] In a more preferred technical solution, the upper surface of the second electrode is flush with the upper surface of the driving substrate, and a plurality of second blind holes are formed on the driving substrate, thereby forming a second magnetic pillar in each second blind hole, wherein the diameter of the second blind hole is larger than the diameter of the first through hole.

[0085] In a more preferred technical solution, after the temporary carrier board is peeled off and before the second encapsulation layer is formed, an annular groove is formed at the periphery of the first encapsulation layer to expose the driving substrate, thereby embedding a portion of the second encapsulation layer into the first encapsulation layer during the formation of the second encapsulation layer.

[0086] In a more preferred technical solution, the present invention also proposes a microLED display device, which is prepared by the above-described manufacturing method for microLED display devices.

[0087] In the manufacturing method of the micro-LED display device of the present invention, by designing the micro-LED unit to be asymmetrical along the center line, and then transferring the asymmetrical micro-LED unit to the temporary carrier plate, the temporary carrier plate is provided with a plurality of first grooves, the shape of the first grooves matching the shape of the micro-LED unit. When the micro-LED unit is transferred to the first groove using a suspension, the front and back sides of the micro-LED unit can be effectively distinguished. The reverse micro-LED unit cannot be embedded in the first groove, thereby improving the accuracy and efficiency of the temporary transfer. Furthermore, by precisely adjusting the net distance between adjacent first grooves, a plurality of micro-LED units on the temporary carrier plate can be directly transferred to the driving substrate, greatly improving the transfer efficiency.

[0088] Secondly, by forming a first encapsulation layer on a temporary carrier board, the first encapsulation layer encapsulates multiple microLED units, and the first encapsulation layer is patterned to form multiple first through holes exposing the temporary carrier board, such that there is a first through hole between adjacent microLED units, and a first magnetic pillar is formed in the first through hole. Through the above configuration, multiple microLED units become a whole, and a magnetic pillar is set between adjacent microLED units. On the one hand, the whole multiple microLED units can be directly transferred to the driving substrate, greatly reducing the number of transfers and reducing the difficulty of precision control. On the other hand, the setting of the first magnetic pillar can achieve precise alignment and improve transfer accuracy.

[0089] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a micro-LED display device, characterized in that: include: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer; The light-emitting epitaxial wafer is cut to form multiple micro-LED units, and each micro-LED unit is etched to form a micro-LED unit that is asymmetrical along the centerline. Next, a first electrode is formed on each of the microLED units; Multiple asymmetrical microLED units along the midline are placed in a suspension, and a temporary carrier plate is provided. The temporary carrier plate has multiple first grooves, the shape of which matches the shape of the microLED units, so that the suspension flows through the temporary carrier plate, thereby causing a portion of each microLED unit to be embedded in one of the first grooves. Next, a first encapsulation layer is formed on the temporary carrier, which encapsulates the microLED unit. Next, the first encapsulation layer is patterned to form a plurality of first through holes that expose the temporary carrier, such that there is a first through hole between adjacent microLED units; A first magnetic column is formed in the first through hole; Next, the first encapsulation layer is planarized to expose the first electrode of each microLED unit; A driving substrate is provided, on which a plurality of second electrodes are formed, and a second magnetic post is formed between each adjacent second electrode; The plurality of microLED units on the temporary carrier are transferred to the driving substrate, such that each first magnetic post is magnetically attracted to the corresponding second magnetic post. After the temporary carrier is peeled off, a second encapsulation layer is formed. Then, a planarization process is performed to remove part of the second encapsulation layer and the growth substrate of the microLED unit, and to form a common electrode that electrically connects the multiple microLED units.

2. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: After each of the first magnetic pillars is magnetically attracted to the corresponding second magnetic pillar, the first electrode of each microLED unit is electrically connected to the corresponding second electrode through heat treatment.

3. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: The epitaxial functional layer includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer.

4. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: The ratio of the depth of the first groove to the thickness of the microLED unit is 0.6-0.

8.

5. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: After planarizing the first encapsulation layer, a cavity is formed on the surface of each of the first magnetic pillars.

6. The method for manufacturing a micro-LED display device according to claim 5, characterized in that: When the second magnetic pillar is formed between adjacent second electrodes, each second magnetic pillar has a protruding structure, and when each first magnetic pillar is magnetically attracted to the corresponding second magnetic pillar, the protruding structure of each second magnetic pillar is embedded in the cavity of the first magnetic pillar.

7. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: The upper surface of the second electrode is flush with the upper surface of the driving substrate, and a plurality of second blind holes are formed on the driving substrate, thereby forming a second magnetic pillar in each second blind hole, wherein the diameter of the second blind hole is larger than the diameter of the first through hole.

8. The method for manufacturing a micro-LED display device according to claim 1, characterized in that: After the temporary carrier board is peeled off and before the second encapsulation layer is formed, annular grooves are formed around the periphery of the first encapsulation layer to expose the drive substrate, thereby embedding a portion of the second encapsulation layer into the first encapsulation layer during the formation of the second encapsulation layer.

9. A micro LED display device, characterized in that: The microLED display device is prepared using the manufacturing method of the microLED display device according to any one of claims 1-8.

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