A pn diode based on a non-doped single crystal substrate and a preparation method thereof
By forming an ion implantation layer on an undoped single-crystal substrate, the fabrication process of gallium nitride PN diodes is simplified, solving the problems of complex fabrication and high cost, and improving the performance and reliability of the device.
CN122349231APending Publication Date: 2026-07-07SHENZHEN UNIV
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Patent Information
- Application Number
- CN202610362926.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-24
- Publication Date
- 2026-07-07
AI Technical Summary
Technical Problem
Existing methods for fabricating gallium nitride PN diodes are complex and costly, and they suffer from interface contamination issues caused by multiple epitaxy processes, which affect device performance and reliability.
Method used
By using an undoped single-crystal substrate combined with ion implantation technology, an ion implantation layer is formed on the back side of the undoped single-crystal structure, simplifying the fabrication process and avoiding multiple epitaxial operations, thus forming a PN diode based on an undoped single-crystal substrate.
Benefits of technology
It simplifies the fabrication process, reduces costs, minimizes interface contamination, and improves the electrical performance and long-term reliability of the device.
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Figure CN122349231A_ABST
Abstract
The application provides a PN diode based on a non-doped single crystal substrate and a preparation method thereof. ‑ a GaN layer, a p + GaN layer and an anode metal layer; wherein the non-doped single crystal structure comprises a non-doped drift layer on a front surface and an ion implantation layer on a back surface, the ion implantation layer is in contact with the cathode metal layer as a substrate of the PN diode, and the non-doped drift layer is in contact with the p ‑ GaN layer to form a PN junction. The PN diode based on the non-doped single crystal substrate and the preparation method thereof have the advantages of simplifying the preparation process, reducing the manufacturing cost, reducing the interface pollution, and improving the electrical performance and long-term reliability of the device.
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