Temperature programmable neuromorphic devices based on lead sulfide colloidal quantum dots and applications
By using a single-layer thin film based on lead sulfide colloidal quantum dots and a temperature control module, the problems of fixed response time and complex structure of optoelectronic neuromorphic devices were solved. The programmable adjustment of the response time of the device at different temperatures was realized, which can adapt to multi-scale timing information processing, reduce energy consumption and simplify the process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING INST OF TECH
- Filing Date
- 2026-04-17
- Publication Date
- 2026-07-14
AI Technical Summary
Existing optoelectronic neuromorphic devices have a fixed response time scale, making it difficult to achieve reversible switching between rapid detection and long-term storage modes on the same hardware platform through simple external control methods. Furthermore, their reliance on multilayer heterogeneous structures leads to high process complexity, making it impossible to fully utilize ambient temperature to control the release process of carrier trap states.
By employing a single-layer thin-film structure based on lead sulfide colloidal quantum dots and combining it with a temperature control module, the release dynamics of trapped state charges can be controlled by switching the device operating temperature within the range of 120 K to 290 K, thereby achieving programmable adjustment of the device response time.
It enables the switchable operation of the same device between fast response and long-term hold under different application requirements, simplifies the device structure, reduces energy consumption, and adapts to the needs of multi-scale timing information processing.
Smart Images

Figure CN122389964A_ABST