Substrate processing method and substrate processing apparatus

By forming a first layer and a second layer on the concave surface of the etched object film, the problem of uneven film formation on the concave surface of the etched object film is solved, achieving higher etching precision and effect.

CN122460264APending Publication Date: 2026-07-24TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202480082313.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-01-09
Filing Date
2024-12-03
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing technologies have difficulty effectively controlling the film formation on the concave surface of the etched object, especially the uneven thickness control at the bottom and sidewalls of the concave area, which affects the etching accuracy and effect.

Method used

A first layer is formed on the recessed surface of the etched film using a processing gas containing a first halogen and hydrogen. Subsequently, a second layer is formed on the recessed surface using a plasma containing a second halogen and a group 14 element. The film formation process is controlled by adjusting the substrate temperature and bias signal.

Benefits of technology

This method achieves uniform film formation on the surface of the recessed area of ​​the etched object, reduces the dependence on the thickness of the bottom and sidewalls of the recess, and improves etching accuracy and effect.

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Abstract

A technique of controlling film formation on a recess surface of an etching target film is provided. A substrate processing method includes: (a) a process of providing a substrate including an etching target film having a recess on a substrate support portion in a chamber; (b) a process of exposing the substrate to a first processing gas containing a first halogen and hydrogen to form a first layer on a surface of the recess, the first layer including at least one of a halogenated surface and a surface on which hydrogen halide is adsorbed; and (c) a process of exposing the substrate to a plasma generated from a second processing gas containing a second halogen and a Group 14 element to form a second layer containing the second halogen and the Group 14 element on the surface of the recess.
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Citation Information

Patent Citations

  • Substrate processing system and substrate processing method

    JP2016021546A