Laser slicing device for silicon carbide wafer
By combining a femtosecond laser device with a refrigerant conduit, the problem of thick and brittle wafers in existing technologies has been solved, enabling efficient cutting of multiple thin wafers, improving productivity and reducing material waste.
CN223492327UActive Publication Date: 2025-10-31GRAND TECH ELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202422442889.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-10
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-10-10
AI Technical Summary
Technical Problem
In existing technologies, wafers are relatively thick and are prone to cracking during laser slicing, and cannot effectively cut multiple thin wafers.
Method used
Using a femtosecond laser device, the wafer rod is rotated synchronously through a fixed clamp and an operating table. The spot of the femtosecond laser is vertically aligned with the central axis of the wafer rod to perform ring-by-ring melting and etching. Combined with a cooling medium conduit to absorb heat and reduce the operating temperature, a thin wafer is formed.
Benefits of technology
This technology enables the formation of three thin wafers from a 1mm thick wafer rod, improving productivity, reducing material waste, and avoiding brittleness issues.
✦ Generated by Eureka AI based on patent content.
Abstract
The utility model provides a laser slicing device for a silicon carbide wafer, which comprises a fixed clamping table, a laser slicing device and a laser slicing device, the operation table is provided with at least one exhaust pipe and at least one refrigerant guide pipe, and the adsorption surface of the operation table adsorbs the other end of the wafer rod through the exhaust pipe; the control module is connected with the fixed clamping table and the operation table and used for synchronously rotating the wafer rod, the fixed clamping table and the operation table; and a femtosecond laser, an irradiation spot of the femtosecond laser is vertically aligned with the central axis of the wafer rod, and when the wafer rod is rotated circle by circle, the wafer rod is fused and etched until a newly formed wafer is fused and separated from the wafer rod.
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