Electrostatic chuck assembly and charged particle beam device

By setting the apex of the ring electrode in the electrostatic chuck assembly above the upper surface of the wafer and applying voltage in layers or segments along the vertical direction, the problem of electric field distortion at the wafer edge is solved, resulting in a more uniform electric field distribution and higher imaging quality and resolution.

CN224355217UActive Publication Date: 2026-06-12ANGSTROM PRECISION INSTRUMENTS CORP
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Patent Information

Application Number
CN202520847716.9
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-29
Publication Date
2026-06-12
Estimated Expiration
2035-04-29

AI Technical Summary

Technical Problem

Existing electrostatic chucks cannot adequately reduce electric field distortion at the wafer edge after applying a compensation voltage, resulting in poor image quality and resolution.

Method used

Design an electrostatic chuck assembly in which the apex height of the annular electrode is higher than the upper surface of the wafer, and the annular electrode is layered or segmented along the vertical direction, and different voltages are applied to adjust the electric field distribution at the edge of the wafer.

Benefits of technology

By smoothing the equipotential lines between the wafer edge and the ring electrode, the uniformity of the electric field distribution is improved, the influence of electric field distortion on the electron beam is reduced, and the imaging quality and resolution are enhanced.

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Abstract

The utility model discloses an electrostatic chuck assembly and a charged particle beam device, and the electrostatic chuck assembly comprises an electrostatic chuck which is used for bearing a wafer; the annular electrode is arranged around the electrostatic chuck; the vertex of the annular electrode is higher than the upper surface of a wafer placed on the electrostatic chuck. According to the charged particle beam device, the vertex height of the annular electrode is set to be higher than the upper surface of the wafer, so that an equipotential line between the edge of the wafer and the annular electrode becomes gentle, the electric field distribution uniformity of the edge of the wafer is improved, and the imaging quality and the imaging resolution of the charged particle beam device are further improved.
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