Metal-containing film-forming compound, metal-containing film-forming composition, and pattern formation method

A metal-containing film-forming compound with specific ligand structures addresses adhesion and etching resistance issues, enabling precise pattern transfer and preventing collapse in fine semiconductor manufacturing.

JP2025176529APending Publication Date: 2025-12-04SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
JP2024082746
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-05-21
Publication Date
2025-12-04

AI Technical Summary

Technical Problem

Conventional photoresist compositions face challenges in achieving fine pattern formation due to reduced resolution and etching resistance, leading to pattern collapse and poor adhesion between metal hard mask films and resist layers, especially under high-NA exposure conditions.

Method used

A metal-containing film-forming compound with specific ligand structures, including Ti, Zr, or Hf, coordinated with oxygen-containing rings, is used to enhance adhesion and prevent pattern collapse, combined with a composition that includes high-boiling point solvents for improved coating and etching resistance.

Benefits of technology

The compound improves adhesion to resist upper layers, maintains rectangular pattern shapes, and enhances dry etching resistance, allowing precise pattern transfer to substrates with minimal damage.

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Abstract

To provide a metal-containing film-forming compound that provides a resist intermediate film capable of obtaining a good pattern profile in a fine patterning process in semiconductor device fabrication step, exhibiting high adhesion to a resist upper layer and preventing collapse of fine patterns, as well as a metal-containing film-forming composition using the compound and a pattern formation method using the composition.SOLUTION: A metal-containing film-forming compound includes at least one metal atom selected from the group consisting of Ti, Zr, and Hf, and a ligand coordinated to the metal atom via an oxygen atom, and the ligand has a ring structure (t) selected from a ring having 4 or more carbon atoms and containing one or more oxygen atoms, a ring having 3 or more carbon atoms and containing two or more oxygen atoms, and a ring having 3 or more carbon atoms and containing one or more oxygen atoms and one or more hetero atoms different from oxygen atoms.SELECTED DRAWING: Figure 1
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