Semiconductor equipment

Abstract

One aspect of the present invention provides a display device which has an imaging function. A light-emitting diode is produced on a first substrate, and then picked up and mounted to a second substrate. Further, the present invention achieves a display device in which: a light-receiving element is also picked up and mounted to the second substrate on which the light-emitting diode has been mounted; a plurality of light-emitting diodes are disposed so as to surround the light-receiving element; and a light-receiving region is provided in a gap between the light-emitting regions.

Description

[Technical Field]

[0001] One aspect of the present invention relates to semiconductor devices and electronic devices.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them.

[0003] In this specification, a semiconductor device refers to a device that utilizes semiconductor properties, including circuits containing semiconductor elements (transistors, diodes, photodiodes, etc.), devices having such circuits, etc. It also refers to any device that can function by utilizing semiconductor properties. For example, integrated circuits, chips equipped with integrated circuits, and electronic components with chips housed in packages are examples of semiconductor devices. Furthermore, memory devices, display devices, light-emitting devices, lighting devices, and electronic devices are themselves semiconductor devices, and may also contain semiconductor devices. [Background technology]

[0004] In recent years, display devices have been required to be highly detailed in order to display high-resolution images. Furthermore, information terminal devices such as smartphones, tablets, and notebook PCs (personal computers) are required to have low power consumption in addition to high resolution. Moreover, there is a demand for display devices that not only display images but also have various additional functions, such as touch panel functionality or fingerprint scanning for authentication.

[0005] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (EL) phenomenon have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a display device that has the function of a touch panel and uses an organic EL element.

[0006] Furthermore, Patent Document 2 discloses an example of a display panel having a micro-LED (Light Emitting Diode). [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] WO2020 / 148604 [Patent Document 2] WO2019 / 220265 [Overview of the Initiative] [Problems that the invention aims to solve]

[0008] One aspect of the present invention aims to provide a display device having an imaging function. Alternatively, it aims to provide a high-definition imaging device or display device. Alternatively, it aims to provide a display device or imaging device with a high aperture ratio. Alternatively, it aims to provide an imaging device or display device capable of high-sensitivity imaging. Alternatively, it aims to provide a display device capable of acquiring biometric information such as fingerprints. Alternatively, it aims to provide a display device that functions as a touch panel. Alternatively, it aims to provide a display device having an imaging function that can be mounted on a vehicle or the like.

[0009] One aspect of the present invention aims to provide a highly reliable display device, imaging device, or electronic device. Another aspect of the present invention aims to provide a display device, imaging device, or electronic device having a novel configuration. Another aspect of the present invention aims to mitigate at least one of the problems of the prior art.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems can be identified from the description in the specification, drawings, claims, etc. [Means for solving the problem]

[0011] After fabricating light-emitting diodes (hereinafter also referred to as LEDs) on the first substrate, they are picked up and mounted on the second substrate. Similarly, light-receiving elements are picked up and mounted on the second substrate on which the light-emitting diodes are mounted. Multiple light-emitting diodes are then arranged to surround the light-receiving elements, thereby realizing a display device with light-receiving areas in the gaps between the light-emitting areas.

[0012] When manufacturing light-emitting diodes (LEDs), a semiconductor substrate or a sapphire substrate is used. Using a semiconductor substrate (single-crystal silicon substrate, silicon carbide substrate) or a sapphire substrate as an initial growth substrate, the LED is manufactured on the substrate by a known method.

[0013] Furthermore, to obtain red, blue, and green light-emitting diodes for full-color display, separate circuit boards are required for each color. In this case, multiple red LEDs are manufactured on the first circuit board, multiple blue LEDs on the second circuit board, and multiple green LEDs on the third circuit board. In this case, each LED is picked up and mounted individually. Alternatively, a certain group of LEDs, for example, three different types of LEDs, can be fixed together with temporary adhesive tape and then mounted.

[0014] Alternatively, by using blue light-emitting diodes and a color conversion layer, full-color display can be achieved by converting the light emitted from two of the three blue light-emitting diodes to either red or green. When using this method, the three blue light-emitting diodes can be picked up and implemented as a set.

[0015] The configuration disclosed herein is a semiconductor device having a plurality of first terminal electrodes and a plurality of second terminal electrodes on a substrate, a light-emitting diode on the first terminal electrodes, and a photodetector having a photoelectric conversion layer on the second terminal electrodes, wherein the light-emitting diode has a first electrode and a second electrode, the first electrode overlaps the first terminal electrode, the first terminal electrode is electrically connected to a drive circuit of the light-emitting diode, and the second terminal electrode is electrically connected to a drive circuit of the photodetector.

[0016] In the above configuration, when mounting the light-emitting diode or photodetector, the terminal electrodes provided on the substrate and the electrodes on the diode chip are aligned, and bonding or crimping is performed to electrically connect them with a connecting layer. Wire bonding using Cu or Au as the wire material can also be used. The connecting layer can be made of solder, metal nanoparticles (Cu, Ag, Ni, Sn, Zn, etc.), or an anisotropic conductive film. Anisotropic conductive film (ACF) is a resin material in which conductive particles are dispersed in a thermosetting epoxy resin.

[0017] In the above configuration, the substrate is a glass substrate, a quartz substrate, a plastic substrate, or a semiconductor substrate.

[0018] Furthermore, as the light-receiving element, a photodiode having a region in which an n-type or p-type dopant is added to a single-crystal semiconductor substrate as the photoelectric conversion layer, a photodiode having an amorphous semiconductor film (typically an amorphous silicon film) as the photoelectric conversion layer, a photodiode having a microcrystalline semiconductor film as the photoelectric conversion layer, a photodiode having a polycrystalline semiconductor film (typically a polysilicon film) as the photoelectric conversion layer, or an organic photodiode having an organic compound as the photoelectric conversion layer can be used.

[0019] Alternatively, a configuration may be used in which a photodiode is formed on a semiconductor substrate in advance, and a light-emitting diode is mounted on the semiconductor substrate. In this configuration, a first light-emitting diode overlaps a first region of the semiconductor substrate, a second light-emitting diode overlaps a second region of the semiconductor substrate, and a third light-emitting diode overlaps a third region of the semiconductor substrate. The semiconductor substrate has a fourth region adjacent to one or more of the first, second, or third regions, and the fourth region of the semiconductor substrate has a photoelectric conversion layer and functions as a light-receiving element.

[0020] In the above configuration, the first region has a first electrode and a second electrode, and the first light-emitting diode is a light-emitting diode chip with one terminal connected to either the first electrode or the second electrode.

[0021] The semiconductor device described above has a light-receiving element between multiple light-emitting elements; in other words, it has a light-receiving area in the gap between multiple light-emitting areas. Therefore, since both display and light reception can be performed in the display area, it can be used in a variety of application products. Examples include personal digital assistants (PDAs), wearable devices, and automotive products. Specifically, these include PDAs with display screens that can be authenticated by infrared sensors (IR sensors), and automotive products such as LiDAR (Light Detection and Ranging). LiDAR has a vertical-cavity surface-emitting laser and a CMOS (Complementary Metal Oxide Semiconductor) image sensor that can receive near-infrared light. [Effects of the Invention]

[0022] A novel display device can be provided that has a light-receiving element between multiple light-emitting elements.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0024] Figures 1A1, 1A2, and 1A3 are perspective views of a manufacturing substrate for a light-emitting diode, and Figure 1A4 is a perspective view of a manufacturing substrate for a photodetector. Figure 1B is a perspective view of a substrate in the process of assembly, showing one embodiment of the present invention. Figures 2A and 2E are cross-sectional views showing examples of the configuration of a display device. Figures 2B to 2D and 2F to 2H are top views showing examples of pixels. Figures 3A and 3B are cross-sectional views showing examples of the configuration of a display device. Figures 3C and 3D are top views showing examples of pixels. Figures 4A and 4B are block diagrams of a display panel 200 showing one embodiment of the present invention. Figures 5A and 5B illustrate examples of circuit configurations for imaging pixels. Figures 6A to 6D illustrate examples of display pixel configurations. Figures 7A, 7B, and 7C show examples of light-emitting element configurations. Figures 8A1, 8A2, and 8A3 are perspective views of a manufacturing substrate for a light-emitting diode. Figure 8B is a perspective view of a substrate in the process of assembly, showing one embodiment of the present invention. Figures 9A and 9B illustrate a Si transistor. Figures 10A to 10D illustrate the OS transistor. Figure 11 is a cross-sectional view showing an example of the configuration of a display device. Figures 12A to 12D show examples of transistors. Figures 13A to 13F illustrate an example of an electronic device. Figures 14A to 14F illustrate an example of an electronic device. [Modes for carrying out the invention]

[0025] Embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and its form and details can be modified in various ways. Furthermore, the present invention is not to be interpreted as being limited to the embodiments described below.

[0026] Furthermore, when it is stated in this specification that X and Y are connected, it is assumed that this specification discloses the cases in which X and Y are electrically connected, functionally connected, and directly connected. Therefore, it is assumed that the disclosed connections are not limited to predetermined connections, such as those shown in the figures or text, but also include connections other than those shown in the figures or text. X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0027] One example of a case where X and Y are electrically connected is that one or more elements that enable electrical connection between X and Y (e.g., switches, transistors, capacitive elements, inductors, resistors, diodes, display devices, light-emitting devices, loads, etc.) can be connected between X and Y. Note that a switch has an on state and an off state. In other words, a switch has the function of controlling whether or not current flows by being in a conductive state (on state) or a non-conductive state (off state).

[0028] One example of a functional connection between X and Y is when one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal conversion circuits (digital-to-analog conversion circuits, analog-to-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplification circuits (circuits that can increase the signal amplitude or current amount, such as operational amplifiers, differential amplifiers, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y.

[0029] Furthermore, when it is explicitly stated that X and Y are electrically connected, this includes both cases where X and Y are electrically connected (i.e., connected with another element or circuit in between) and cases where X and Y are directly connected (i.e., connected without another element or circuit in between).

[0030] Furthermore, for example, it can be expressed as, "X, Y, the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and the connection is in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Alternatively, it can be expressed as, "The source (or first terminal, etc.) of the transistor is electrically connected to X, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Alternatively, it can be expressed as, "X is electrically connected to Y via the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using similar notation to these examples to define the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and their technical scope determined. Note that these notational methods are examples only and are not limited to them. Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0031] Even if independent components are shown as electrically connected in a circuit diagram, a single component may possess the functions of multiple components. For example, if part of a wire also functions as an electrode, a single conductive film possesses the functions of both the wire and the electrode. Therefore, in this specification, "electrically connected" includes cases where a single conductive film possesses the functions of multiple components.

[0032] Furthermore, in this specification, "capacitive element" can refer to, for example, a circuit element having a capacitance value higher than 0F, a region of wiring having a capacitance value higher than 0F, parasitic capacitance, the gate capacitance of a transistor, etc. Therefore, in this specification, "capacitive element" includes not only a circuit element comprising a pair of electrodes and a dielectric material contained between the electrodes, but also parasitic capacitance occurring between wirings, the gate capacitance occurring between one of the sources or drains of a transistor and the gate, etc. Also, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" can be replaced with terms such as "capacitance," and conversely, the term "capacitance" can be replaced with terms such as "capacitive element," "parasitic capacitance," and "gate capacitance." In addition, the term "a pair of electrodes" in "capacitance" can be replaced with terms such as "a pair of conductors," "a pair of conductive regions," and "a pair of regions." The capacitance value can be, for example, 0.05fF or more and 10pF or less. Alternatively, it may be, for example, 1pF or more and 10μF or less.

[0033] Furthermore, in this specification, a transistor has three terminals called the gate, source, and drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as either the source or the drain are the input and output terminals of the transistor. Depending on the conductivity type of the transistor (n-channel type, p-channel type) and the potential applied to the three terminals of the transistor, one of the two input and output terminals becomes the source and the other becomes the drain. For this reason, in this specification, the terms source and drain can be used interchangeably. Also, in this specification, when describing the connection relationships of a transistor, the notation "one of the source or drain" (or first electrode, or first terminal) and "the other of the source or drain" (or second electrode, or second terminal) is used. Depending on the structure of the transistor, in addition to the three terminals described above, there may be a back gate. In this case, in this specification, one of the gate or back gate of the transistor may be called the first gate, and the other of the gate or back gate of the transistor may be called the second gate. Furthermore, in the same transistor, the terms "gate" and "back gate" may be interchangeable. Furthermore, if a transistor has three or more gates, in this specification, each gate may be referred to as the first gate, second gate, third gate, and so on.

[0034] Furthermore, in this specification, the term "node" can be replaced with terminals, wiring, electrodes, conductive layers, conductors, impurity regions, etc., depending on the circuit configuration, device structure, etc. Also, terminals, wiring, etc. can be replaced with "node".

[0035] Furthermore, the ordinal numbers "1st," "2nd," and "3rd" in this specification are used to avoid confusion of constituent elements. Therefore, they do not limit the number of constituent elements, nor do they limit the order of the constituent elements. For example, a constituent element referred to as "1st" in one embodiment of this specification may be referred to as "2nd" in another embodiment or in the claims. Also, for example, a constituent element referred to as "1st" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0036] Furthermore, in this specification, phrases indicating arrangement such as "above," "below," "upward," or "downward" are sometimes used for convenience to explain the positional relationship between components with reference to the drawings. Also, the positional relationship between components changes as appropriate depending on the direction in which each component is depicted. Therefore, the phrases explained in the specification are not limited to those described and can be appropriately rephrased depending on the situation. For example, the expression "insulator located on the upper surface of the conductor" can be rephrased as "insulator located on the lower surface of the conductor" by rotating the orientation of the drawing shown by 180 degrees.

[0037] Furthermore, the terms "above" and "below" do not limit the positional relationship of the components to being directly above or below each other and in direct contact. For example, the expression "electrode B on insulating layer A" does not require electrode B to be formed in direct contact with insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0038] Furthermore, in this specification, terms such as "overlapping" do not limit the state of the stacking order of the components. For example, the expression "electrode B overlapping insulating layer A" does not exclude not only the state in which electrode B is formed on top of insulating layer A, but also the state in which electrode B is formed below insulating layer A or the state in which electrode B is formed to the right (or left) of insulating layer A.

[0039] Furthermore, in this specification, the terms "adjacent" and "proximity" are not limited to direct contact between components. For example, the expression "electrode B adjacent to insulating layer A" does not require that insulating layer A and electrode B be formed in direct contact, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0040] Furthermore, in this specification, terms such as "film" and "layer" can be interchanged as needed. For example, the term "conductive layer" may be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to the term "insulating layer." Alternatively, depending on the circumstances, terms such as "film" and "layer" can be omitted and replaced with other terms. For example, the term "conductive layer" or "conductive film" may be changed to the term "conductor." Or, the term "conductor" may be changed to the term "conductive layer" or "conductive film." Alternatively, for example, the term "insulating layer" or "insulating film" may be changed to the term "insulator." Or, the term "insulator" may be changed to the term "insulating layer" or "insulating film."

[0041] Furthermore, in this specification, terms such as "electrode," "wiring," and "terminal" do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" or "wiring" include cases where multiple "electrodes" or "wiring" are formed as a single unit. Similarly, for example, "terminal" may be used as part of "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" also includes cases where multiple "electrodes," "wiring," or "terminals" are formed as a single unit. Therefore, for example, an "electrode" can be part of "wiring" or a "terminal," and for example, a "terminal" can be part of "wiring" or an "electrode." In addition, terms such as "electrode," "wiring," and "terminal" may be replaced with terms such as "region" depending on the circumstances.

[0042] Furthermore, in this specification, terms such as "wiring," "signal line," and "power line" can be interchanged with each other depending on the circumstances or situation. For example, the term "wiring" may be changed to the term "signal line." Also, for example, the term "wiring" may be changed to the term "power line." Similarly, the reverse is also true; terms such as "signal line" and "power line" may be changed to the term "wiring." Terms such as "power line" may be changed to the term "signal line." Similarly, the reverse is also true; terms such as "signal line" may be changed to the term "power line." In addition, the term "potential" applied to the wiring may be changed to the term "signal," depending on the circumstances or situation. Similarly, the reverse is also true; terms such as "signal" may be changed to the term "potential."

[0043] In this specification, "parallel" means that two lines are positioned at an angle of -10° or more and 10° or less. Therefore, the case of -5° or more and 5° or less is also included. "Approximately parallel" or "roughly parallel" means that two lines are positioned at an angle of -30° or more and 30° or less. "Perpendicular" means that two lines are positioned at an angle of 80° or more and 100° or less. Therefore, the case of 85° or more and 95° or less is also included. "Approximately perpendicular" or "roughly perpendicular" means that two lines are positioned at an angle of 60° or more and 120° or less.

[0044] In this specification, when count values ​​and measured values ​​are referred to as "identical," "same," "equal," or "uniform" (including synonyms thereof), unless otherwise explicitly stated, this refers to a margin of error of plus or minus 20%.

[0045] The embodiments described herein will be explained with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope. Therefore, the present invention is not to be interpreted as being limited to the contents of the embodiments. In the configuration of the invention in the embodiments, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated explanations may be omitted. Also, when referring to similar functions, the hatch patterns may be the same, and reference numerals may not be assigned. Furthermore, in order to make the drawings easier to understand, some components may be omitted in perspective views or top views, etc.

[0046] Furthermore, in the drawings and other illustrations relating to this specification, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to the size or aspect ratio. The drawings are schematic representations of ideal examples and are not limited to the shapes or values ​​shown in the drawings. For example, they may include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences.

[0047] Furthermore, in drawings and other illustrations relating to this specification, arrows indicating the X, Y, and Z directions may be included. In this specification, the "X direction" refers to the direction along the X-axis, and unless explicitly stated, the forward and reverse directions may not be distinguished. The same applies to the "Y direction" and "Z direction." Also, the X, Y, and Z directions are directions that intersect each other. More specifically, the X, Y, and Z directions are directions that are orthogonal to each other. In this specification, one of the X, Y, or Z directions may be referred to as the "first direction" or "first direction." Another may be referred to as the "second direction" or "second direction." The remaining one may be referred to as the "third direction" or "third direction."

[0048] In this specification, when the same symbol is used for multiple elements, and especially when it is necessary to distinguish them, an identifying symbol such as "A", "b", "_1", "[n]", or "[m,n]" may be added to the symbol.

[0049] (Embodiment 1) In this embodiment, a pixel circuit or a driving circuit is formed on a glass substrate 201, and multiple terminal electrodes are formed. A light-emitting element and a light-receiving element are mounted on the multiple formed terminal electrodes to fabricate a display device.

[0050] The light-emitting element uses a light-emitting diode formed on a sapphire substrate. Prior to this, a sapphire substrate is used as the initial growth substrate, and multiple light-emitting diodes of the desired size are manufactured on the substrate using a known method. Since the material of the light-emitting layer differs depending on the light-emitting color of the diode, the same number of sapphire substrates as there are different light-emitting colors are prepared.

[0051] In this embodiment, a red light-emitting diode substrate 901 shown in Figure 1A1, a green light-emitting diode substrate 902 shown in Figure 1A2, and a blue light-emitting diode substrate 903 shown in Figure 1A3 are prepared. Micro-LEDs with a rectangular planar shape and a chip size of at least one side less than 0.1 mm, or mini-LEDs with a rectangular planar shape and a chip size of at least one side 0.1 mm or more, are arranged continuously in the vertical and horizontal directions on each substrate.

[0052] Furthermore, a photodetector is prepared by forming a photodetector on a single-crystal silicon wafer 904. Figure 1A4 is a perspective view of the substrate on which the photodetector is provided.

[0053] First, the photodetectors 212 are mounted on the terminal electrodes arranged in a matrix on the glass substrate 201, and then the light-emitting diodes are mounted one by one. Figure 1B shows a perspective view during the mounting process, illustrating the stage in which one red light-emitting diode 11R, one green light-emitting diode 11G, and one blue light-emitting diode 11B are mounted on the glass substrate 201 on which the photodetectors 212 have been mounted.

[0054] In Figure 1B, three sub-pixels—a red light-emitting diode 11R, a green light-emitting diode 11G, and a blue light-emitting diode 11B—are provided as a single pixel to enable full-color display, and a light-receiving element 212 is also provided. Note that the arrangement of the sub-pixels and the size of the light-emitting area are not limited to the example in Figure 1B and can be set as appropriate by the designer.

[0055] Furthermore, by using only light-emitting diodes 11B that emit excitation light in the blue wavelength range (peak wavelength between 400 nm and 500 nm) as sub-pixels, full-color display can be achieved in combination with a color conversion layer (also called a phosphor layer).

[0056] Furthermore, full-color display can be achieved by using only light-emitting diodes (peak wavelength 200 nm to less than 400 nm) as sub-pixels, in combination with a color conversion layer and a coloring layer. The color conversion layer (or coloring layer) is a resin layer containing a fluorescent dye (pigment or dye).

[0057] The pixel circuit or driving circuit formed on the glass substrate 201 can be constructed using thin-film transistors, and the semiconductor layer material of the thin-film transistor can be an amorphous semiconductor film, a polycrystalline semiconductor film, or an oxide semiconductor film. A polycrystalline silicon film (also called a polysilicon film) can be used as the polycrystalline semiconductor film, and an IGZO film can be used as the oxide semiconductor film. Alternatively, a pixel circuit or driving circuit can be constructed by combining a first thin-film transistor using a polycrystalline semiconductor film and a second thin-film transistor using an oxide semiconductor film on the glass substrate 201.

[0058] After mounting the light-emitting diodes and photodetectors, a protective substrate is placed. Preferably, the protective substrate is made of a material that transmits light from the light-emitting diodes and does not block light reception to the photodetectors. Examples include a quartz substrate, a glass substrate, or a film.

[0059] A schematic cross-sectional view of the display panel 200 manufactured in this manner is shown in Figure 2A.

[0060] [Example of display device configuration 1] [Configuration Example 1-1]

[0061] As shown in Figure 2A, the display panel 200 has a functional layer 203 on a glass substrate 201 which includes a pixel circuit or a driving circuit, on which light-emitting diodes and photodetectors are provided, and a protective substrate 202 is provided. The functional layer 203 has switches, transistors, capacitors, wiring, and terminal electrodes 203a, and the terminal electrodes 203a are electrically connected to the electrodes 11a of the light-emitting diodes. Solder or a connecting layer containing conductive fine particles may be used to connect the terminal electrodes to the electrodes of the light-emitting diodes and photodetectors.

[0062] The gap between the protective substrate 202 and the glass substrate 201 may be filled with resin or a dry gas. A gap material may be placed to maintain the distance between the protective substrate 202 and the glass substrate 201, or the peripheral edges of the protective substrate 202 and the glass substrate 201 may be fixed with a sealing material.

[0063] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting diode. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Also, a single pixel may have multiple light-receiving elements 212.

[0064] Figure 2A shows how a finger 220 touches the surface of the protective substrate 202. A portion of the light emitted by the light-emitting diode 11G is reflected at the contact point between the protective substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, allowing detection that the finger 220 has touched the protective substrate 202. In other words, the display panel 200 can function as a touch panel.

[0065] Here, Figures 2B to 2D show examples of pixels applicable to the display panel 200.

[0066] The pixels shown in Figures 2B and 2C each have a red (R) light-emitting diode 11R, a green (G) light-emitting diode 11G, a blue (B) light-emitting diode 11B, and a light-receiving element 212, respectively.

[0067] Figure 2B shows an example where three light-emitting diodes and one photodetector are arranged in a 2x2 matrix. Figure 2C shows an example where three light-emitting diodes are arranged in a row, with a horizontally elongated photodetector 212 positioned below them.

[0068] The pixel shown in Figure 2D is an example that has a white (W) light-emitting diode 11W. The white (W) light-emitting diode 11W uses a blue light-emitting diode to illuminate a yellow phosphor, thereby producing white light. In this example, four types of light-emitting diodes are arranged in a row, with a light-receiving element 212 positioned below them.

[0069] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0070] [Configuration Example 1-2] The following describes an example of the configuration of a display panel 200A that includes a light-emitting diode that emits visible light, a light-emitting diode that emits infrared light, and a light-receiving element.

[0071] The display panel 200A shown in Figure 2E includes a light-emitting diode 11IR in addition to the configuration illustrated in Figure 2A. The light-emitting diode 11IR is a light-emitting diode that emits infrared light (IR). In this case, it is preferable to use a light-receiving element 212 that can receive at least the infrared light (IR) emitted by the light-emitting diode 11IR.

[0072] As shown in Figure 2E, when a finger 220 touches the protective substrate 202, infrared light IR emitted from the light-emitting diode 11IR is reflected by the finger 220, and a portion of this reflected light is incident on the light-receiving element 212, thereby allowing the position information of the finger 220 to be acquired.

[0073] Figures 2F to 2H show examples of pixels applicable to the display panel 200A.

[0074] Figure 2F shows an example where three light-emitting diodes are arranged in a row, with the light-emitting diode 11IR and the photodetector 212 positioned side by side below them. Figure 2G shows an example where four types of light-emitting diodes, including the light-emitting diode 11IR, are arranged in a row, with the photodetector 212 positioned below them.

[0075] Figure 2H shows an example where three types of light-emitting diodes and a light-receiving element 212 are arranged around the light-emitting diode 11IR in the center.

[0076] In addition, in the pixels shown in Figures 2F to 2H, the positions of the light-emitting diodes with each other, and the positions of the light-emitting diodes with the photodetectors, are interchangeable.

[0077] [Configuration Examples 1-3] The following describes an example of the configuration of a display panel 200B that includes a light-emitting diode that emits blue light, a light-emitting diode that emits infrared light, and a light-receiving element that receives infrared light.

[0078] The display panel 200B shown in Figure 3A has a color conversion layer 202R that overlaps with the light-emitting diode 11B. It also has a color conversion layer 202G that overlaps with the light-emitting diode 11B. When mounting, multiple identical light-emitting diodes 11B are mounted, so they can be mounted together.

[0079] [Configuration Examples 1-4] The following describes an example of the configuration of a display panel 200C that includes a light-emitting diode that emits ultraviolet light and a light-receiving element that receives ultraviolet light.

[0080] The display panel 200C shown in Figure 3B is capable of full-color display using only the light-emitting diode 11UV and can receive ultraviolet light. The light-emitting diode 11UV is a light-emitting diode that emits ultraviolet light (UV).

[0081] The display panel 200C shown in Figure 3B has a color conversion layer 202r that overlaps with the light-emitting diode 11UV. It also has a color conversion layer 202b that overlaps with the light-emitting diode 11UV. Furthermore, it has a color conversion layer 202g that overlaps with the light-emitting diode 11UV. When mounting, multiple identical light-emitting diodes 11UV can be mounted together.

[0082] [Configuration Examples 1-5] Figure 3C shows four pixels to which a PenTile array has been applied, with two adjacent pixels having light-emitting diodes that emit two different colored light in different combinations. Figure 3C also shows the top surface shape of the light-emitting diodes.

[0083] In Figure 3C, the upper left and lower right pixels have light-emitting diodes 11R and 11G, respectively. The upper right and lower left pixels also have light-emitting diodes 11G and 11B. In other words, in the example shown in Figure 3C, each pixel is provided with a light-emitting diode 11G. Each light-emitting diode constitutes a sub-pixel, and the pixels are arranged using two types of combinations: pixels with light-emitting diodes 11R and 11G, and pixels with light-emitting diodes 11G and 11B.

[0084] The top surface shape of the light-emitting diode (LED) is not particularly limited and can be a circle, ellipse, polygon, rounded polygon, etc. Figure 3C shows an example where the top surface shape of the LED is a square (rhombus) tilted at approximately 45 degrees. Note that the top surface shapes of each color of LED may be different from each other, or they may be the same for some or all colors.

[0085] Furthermore, the size of the light-emitting region of each colored light-emitting diode may differ from one another, or it may be the same for some or all of the colors. For example, in Figure 3C, the area of ​​the light-emitting region of the light-emitting diode 11G provided in each pixel may be smaller than the light-emitting region of the other elements.

[0086] Figure 3D shows a modified version of the pixel arrangement shown in Figure 3C. The top-left and bottom-right pixels in Figure 3D have light-emitting diodes 11R and 11G, respectively. The top-right and bottom-left pixels also have light-emitting diodes 11R and 11B. In other words, in the example shown in Figure 3D, each pixel is provided with a light-emitting diode 11R. Each light-emitting diode constitutes a sub-pixel, and the arrangement uses two types of pixels: one with a combination of light-emitting diode 11R and light-emitting diode 11G, and another with a combination of light-emitting diode 11R and light-emitting diode 11B.

[0087] Furthermore, although the light-receiving elements are not shown in Figures 3C and 3D, they are not particularly limited to being placed between light-emitting diodes; for example, one could be placed between two adjacent subpixels.

[0088] As described above, various pixel arrangements can be applied to the display device having the display panel of this embodiment.

[0089] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0090] (Embodiment 2) The display device includes three types of light-emitting diodes 11R, 11G, and 11B, and a light-receiving device. It may also include a light-emitting diode 11IR that emits near-infrared light as a light source. The light-receiving device has the function of sensing light emitted from a visible light or near-infrared light source and reflected by an object. When a near-infrared light source is used, there is virtually no visual sensitivity, so even if light from the first, second, and third light-emitting devices is emitted from the display unit at high brightness, it does not affect the visibility of the display.

[0091] Figure 4A shows a block diagram of the light-receiving element 212 and the driving circuit in the display panel 200. Figure 4B shows a block diagram of the light-emitting diode and the driving circuit in the display panel 200. Since the light-receiving element 212 and the light-emitting diode are driven independently, separate driving circuits are required for each. For clarity, they are shown separately in Figures 4A and 4B, but in reality, they are composed of the functional layer 203 shown in Figure 2A or an external driving IC. Note that the same reference numerals will be used in Figures 4A and 4B for parts corresponding to the display panel 200 in Figure 2A.

[0092] In Figure 4A, the display panel 200 comprises a pixel array 17, a light-receiving element 212, a first drive circuit unit 13, a second drive circuit unit 14, a readout circuit unit 15, wiring 131, wiring 132, wiring 133, and a control circuit unit 16. A configuration including a microlens array containing multiple microlenses may be provided, superimposed on the light-receiving element 212. Furthermore, the light-receiving element 212 is mounted in the column and row directions so as not to overlap with the light-emitting diodes. In Figure 4A, terminal OUT indicates an output terminal.

[0093] For example, a pn-type or pin-type photodiode can be used as the light-receiving element 212. A photodiode chip made of crystalline silicon (such as single-crystal silicon, polycrystalline silicon, or microcrystalline silicon) can also be used as the light-receiving device. The light-receiving device can be a photoelectric conversion element that detects incident light and generates an electric charge. In the light-receiving device, the amount of charge generated is determined based on the amount of incident light.

[0094] As the light-receiving element 212, an organic photodiode having an organic compound in its photoelectric conversion layer can also be used. Organic photodiodes are easy to make thin, light, and large in area. In addition, because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0095] In Figure 4B, the display panel 200 comprises a pixel array 17, three types of light-emitting diodes 11R, 11G, and 11B, a first drive circuit unit 231, and a second drive circuit unit 232. In Figure 4B, the mounting position of the light-receiving element 212 is indicated by a dotted line, showing the positional relationship between one pixel 10 and the mounting positions of the three sub-pixels, i.e., the three types of light-emitting diodes 11R, 11G, and 11B. It can also be said that the display panel 200 has three display pixels and one imaging pixel in one pixel 10.

[0096] In this specification, the smallest unit in which an independent operation takes place within a single "pixel" is conveniently defined as a "sub-pixel" for explanation purposes. However, "pixel" may be replaced with "region," and "sub-pixel" may be replaced with "pixel."

[0097] The three types of light-emitting diodes 11R, 11G, and 11B are LEDs such as micro-LEDs. Micro-LEDs have a chip size in which at least one side of a rectangular planar shape is less than 0.1 mm. Alternatively, mini-LEDs with a chip size in which at least one side of a rectangular planar shape is 0.1 mm or larger may be used.

[0098] The light-receiving element 212 has the function of sensing light emitted by a green light-emitting diode 11G and reflected from an object. The light-receiving element 212 may be a light-receiving device that is sensitive to near-infrared light. In addition, a light-emitting diode that emits infrared light may be further provided in the pixel 10.

[0099] The drive circuit for imaging using the light-receiving element 212 is provided independently of the drive circuit for display. Specifically, the drive circuit for imaging is shown in Figures 5A and 5B. The drive circuit for display is shown in Figures 6A, 6B, 6C, and 6D.

[0100] <Example of circuit configuration for imaging pixels> Figure 5A is a circuit diagram illustrating an example of the circuit configuration of the light-receiving element 212. The drive circuit including the light-receiving element 212 comprises transistors 102, 103, 104, 105, and capacitor 108. Note that the capacitor 108 may be omitted. Furthermore, a transistor variation correction circuit may be provided, or the transistor variation may be externally corrected.

[0101] One electrode (cathode) of the light-receiving element 212 is electrically connected to either the source or the drain of transistor 102. The other source or drain of transistor 102 is electrically connected to either the source or the drain of transistor 103. One source or drain of transistor 103 is electrically connected to one electrode of capacitor 108. One electrode of capacitor 108 is electrically connected to the gate of transistor 104. One source or drain of transistor 104 is electrically connected to either the source or the drain of transistor 105.

[0102] Here, the wiring connecting the source or drain of transistor 102, one electrode of capacitor 108, and the gate of transistor 104 is defined as node FD. Node FD can function as a charge detection unit.

[0103] The other electrode (anode) of the light-receiving element 212 is electrically connected to the wiring 121. The gate of transistor 102 is electrically connected to the wiring 127. The other source or drain of transistor 103 is electrically connected to the wiring 122. The other source or drain of transistor 104 is electrically connected to the wiring 123. The gate of transistor 103 is electrically connected to the wiring 126. The gate of transistor 105 is electrically connected to the wiring 128. The other electrode of capacitor 108 is electrically connected to a reference potential line, such as the GND wiring. The other source or drain of transistor 105 is electrically connected to the wiring 352.

[0104] Wires 127, 126, and 128 function as signal lines to control the on / off states of each transistor. Wire 352 functions as an output line.

[0105] Wires 121, 122, and 123 function as power lines. In the configuration shown in Figure 5A, the cathode side of the photodetector 212 is electrically connected to the transistor 102, and the node FD is reset to a high potential for operation. Therefore, wire 122 is at a high potential (higher than wire 121).

[0106] In Figure 5A, the cathode of the photodetector 212 is shown to be electrically connected to node FD. However, the anode side of the photodetector 212 may also be electrically connected to either the source or drain of transistor 102. In this case, since node FD is reset to a low potential for operation, the wiring 122 should be at a low potential (lower than the wiring 121).

[0107] Transistor 102 has the function of controlling the potential of node FD. Transistor 102 is also called the "transfer transistor". Transistor 103 has the function of resetting the potential of node FD. Transistor 103 is also called the "reset transistor". Transistor 104 functions as a source follower circuit and can output the potential of node FD as image data to wiring 352. Transistor 105 has the function of selecting the pixel to which the image data is output. Transistor 104 is also called the "amplifier transistor". Transistor 105 is also called the "selection transistor".

[0108] Furthermore, as shown in Figure 5B, multiple sets of photodetectors 212 and transistors 102 may be connected to node FD, with each set of photodetectors 212 and transistor 102 considered as one unit. The circuit configuration shown in Figure 5B reduces the area occupied by each photodetector 212. Therefore, the mounting density of the photodetectors 212 can be increased.

[0109] In Figure 5B, the first pair of light-receiving elements 212 and transistor 102 is shown as light-receiving element 212_1 and transistor 102_1. The gate of transistor 102_1 is electrically connected to wiring 127_1. The second pair of light-receiving elements 212 and transistor 102 is shown as light-receiving element 212_2 and transistor 102_2. The gate of transistor 102_2 is electrically connected to wiring 127_2. The kth pair (where k is an integer greater than or equal to 1) of light-receiving elements 212 and transistor 102 is shown as light-receiving element 212_k and transistor 102_k. The gate of transistor 102_k is electrically connected to wiring 127_k.

[0110] <Example of circuit configuration for display pixels 1> Figure 6A shows an example of the circuit configuration of a sub-pixel within a single pixel 10. In this embodiment, a sub-pixel that emits red light will be used as an example. The sub-pixel has a display pixel circuit 431 and a light-emitting diode 11R. The other sub-pixels are a sub-pixel that emits blue light and a sub-pixel that emits green light. The three types of light-emitting diodes form a single pixel 10, which is arranged in m rows and n columns to form a display area. m and n are both integers of 1 or more.

[0111] The display pixel circuit 431 includes a transistor 436, a capacitive element 433, a transistor 251, and a transistor 434. The display pixel circuit 431 is also electrically connected to the light-emitting diode 11R.

[0112] One of the source and drain electrodes of transistor 436 is electrically connected to a wiring to which a data signal (also called a "video signal") is supplied (hereinafter referred to as signal line DL_n). Furthermore, the gate electrode of transistor 436 is electrically connected to a wiring to which a gate signal is supplied (hereinafter referred to as scan line GL_m). Signal line DL_n and scan line GL_m correspond to wiring 237 and wiring 236 (in Figure 4B), respectively.

[0113] Transistor 436 has the function of controlling the writing of data signals to node 435.

[0114] One of the pair of electrodes of the capacitive element 433 is electrically connected to node 435, and the other is electrically connected to node 437. Additionally, the source electrode and the other drain electrode of the transistor 436 are electrically connected to node 435.

[0115] The capacitive element 433 functions as a holding capacitor that holds the data written to node 435.

[0116] One of the source and drain electrodes of transistor 251 is electrically connected to the potential supply line VL_a, and the other is electrically connected to node 437. Furthermore, the gate electrode of transistor 251 is electrically connected to node 435.

[0117] One of the source and drain electrodes of transistor 434 is electrically connected to the potential supply line V0, and the other is electrically connected to node 437. Furthermore, the gate electrode of transistor 434 is electrically connected to the scan line GL_m.

[0118] One of the light-emitting diodes 11R, either the anode or the cathode, is electrically connected to the potential supply line VL_b, and the other is electrically connected to node 437.

[0119] Furthermore, the power supply potential can be, for example, the potential on the relatively higher or lower side. The power supply potential on the higher side is called the high power supply potential (also called "VDD"), and the power supply potential on the lower side is called the low power supply potential (also called "VSS"). In addition, the ground potential can be used as the high or low power supply potential. For example, if the high power supply potential is the ground potential, the low power supply potential is lower than the ground potential, and if the low power supply potential is the ground potential, the high power supply potential is higher than the ground potential.

[0120] For example, a high power supply potential VDD is supplied to one of the potential supply lines VL_a or VL_b, and a low power supply potential VSS is supplied to the other.

[0121] In a display device having a display pixel circuit 431, the peripheral drive circuit sequentially selects the display pixel circuit 431 for each row, turns on transistors 436 and 434, and writes a data signal to node 435.

[0122] When data is written to node 435, the display pixel circuit 431 enters a hold state when transistors 436 and 434 are turned off. Furthermore, the amount of current flowing between the source and drain electrodes of transistor 251 is controlled according to the potential of the data written to node 435, and the light-emitting diode 11R emits red light with a brightness corresponding to the amount of current flowing. By performing this sequentially for each row, a red image can be displayed. Furthermore, by driving light-emitting diodes 11B and 11G in the same manner, a full-color image can be displayed.

[0123] Furthermore, a transistor variation correction circuit may be provided, or the transistor variation may be corrected externally.

[0124] <Example of circuit configuration for display pixels 2> Figure 6B shows a modified version of the circuit configuration of the display pixel shown in Figure 6A. In the circuit configuration shown in Figure 6B, the gate electrode of transistor 436 is electrically connected to the line to which the first scan signal is supplied (hereinafter referred to as scan line GL1_m). In addition, the gate electrode of transistor 434 is electrically connected to the line to which the second scan signal is supplied (hereinafter referred to as scan line GL2_m).

[0125] Furthermore, the circuit configuration shown in Figure 6B includes a transistor 438 in addition to the circuit configuration shown in Figure 6A. One of the source and drain electrodes of transistor 438 is electrically connected to the potential supply line V0, and the other is electrically connected to node 435. In addition, the gate electrode of transistor 438 is electrically connected to the line to which the third scanning signal is supplied (hereinafter referred to as the scanning line GL3_m).

[0126] Scan line GL1_m corresponds to wiring 236 shown in Figure 4B. Although Figure 4B does not show the wiring corresponding to scan lines GL2_m and GL3_m, scan lines GL2_m and GL3_m are electrically connected to the first drive circuit unit 231.

[0127] For example, to display black on the light-emitting diode 11R, both transistors 434 and 438 are turned on. This makes the potential of the source electrode and gate electrode of transistor 251 equal. Therefore, the gate voltage of transistor 251 becomes 0V, and the current flowing through the light-emitting diode 11R can be cut off.

[0128] Furthermore, some or all of the transistors constituting the display pixel circuit 431 may be transistors having back gates. In the circuit configuration shown in Figure 6B, transistors having back gates are used as transistors. For example, transistors 434, 436, and 438 each show examples where the gate and back gate are electrically connected. Also, in the transistor 251 shown in Figure 6B, the back gate is electrically connected to node 437.

[0129] Furthermore, a transistor variation correction circuit may be provided, or the transistor variation may be corrected externally.

[0130] <Example of circuit configuration for display pixels 3> Figure 6C shows a modified version of the display pixel circuit configuration shown in Figure 6A. The circuit configuration shown in Figure 6C is the same as the circuit configuration shown in Figure 6A, but without transistor 434 and the potential supply line V0. The other components can be understood by referring to the explanation of the circuit configuration shown in Figure 6A. Therefore, in order to reduce repetition of explanations, a detailed explanation of the circuit configuration shown in Figure 6C will be omitted.

[0131] Furthermore, as mentioned above, some or all of the transistors constituting the display pixel circuit 431 may be transistors having back gates. For example, as shown in Figure 6D, a transistor having a back gate may be used for transistor 436, and the back gate and the gate may be electrically connected. Alternatively, as shown for transistor 251 in Figure 6D, the back gate and either the source or drain of the transistor may be electrically connected.

[0132] Alternatively, the common wiring of the light-emitting diodes 11R, 11G, and 11B and the common wiring of the light-receiving element 212 may be shared to reduce the number of wires.

[0133] Furthermore, the light-receiving element 212 can be used to acquire imaging data such as fingerprints, palm prints, or iris scans. In other words, a biometric authentication function can be added to the display device. Alternatively, imaging data may be acquired by bringing the object into contact with the display device.

[0134] Furthermore, the light-receiving element 212 can be used to acquire imaging data such as the user's facial expressions, eye movements, or changes in pupil diameter. By analyzing this image data, information about the user's physical and mental state can be obtained. Based on this information, the display device can perform actions that match the user's physical and mental state, such as changing one or both of the display and sound output. These actions are effective, for example, for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality) devices.

[0135] Furthermore, a transistor variation correction circuit may be provided, or the transistor variation may be corrected externally.

[0136] (Embodiment 3) In this embodiment, the configuration of the light-emitting diode is described below. Individually cut light-emitting diode chips are sometimes referred to as LED chips 51.

[0137] The configuration of the light-emitting diode is not particularly limited and may include a Metal Insulator Semiconductor (MIS) junction, a homostructure having a PN junction or a PIN junction, a heterostructure, or a double heterostructure. Furthermore, a superlattice structure, a single quantum well structure or a multi-quantum well (MQW) structure with stacked thin films producing quantum effects may also be used. Additionally, LED chips using nanocolumns may be employed.

[0138] Examples of LED chips are shown in Figures 7A and 7B. Figure 7A is a cross-sectional view of the LED chip 51, and Figure 7B is a top view of the LED chip 51. The LED chip 51 has a semiconductor layer 81, etc. The semiconductor layer 81 has an n-type semiconductor layer 75, an emissive layer 77 on the n-type semiconductor layer 75, and a p-type semiconductor layer 79 on the emissive layer 77. As the material for the p-type semiconductor layer 79, a material with a larger bandgap energy than the emissive layer 77 and capable of confining carriers to the emissive layer 77 can be used. The LED chip 51 also has an electrode 85 that functions as a cathode on the n-type semiconductor layer 75, an electrode 83 that functions as a contact electrode on the p-type semiconductor layer 79, and an electrode 87 that functions as an anode on the electrode 83. It is also preferable that the top and side surfaces of the electrode 83 are covered with an insulating layer 89. The insulating layer 89 functions as a protective film for the LED chip 51.

[0139] An example of an enlarged view of the semiconductor layer 81 is shown in Figure 7C. As shown in Figure 7C, the n-type semiconductor layer 75 may have an n-type contact layer 75a on the substrate 71 side and an n-type cladding layer 75b on the light-emitting layer 77 side. The p-type semiconductor layer 79 may have a p-type cladding layer 79a on the light-emitting layer 77 side and a p-type contact layer 79b on the p-type cladding layer 79a.

[0140] The light-emitting layer 77 can utilize a multiple quantum well (MQW) structure in which a barrier layer 77a and a well layer 77b are stacked multiple times. Preferably, the barrier layer 77a is made of a material with a larger bandgap energy than the well layer 77b. With this configuration, energy can be confined to the well layer 77b, improving quantum efficiency and thus improving the luminous efficiency of the LED chip 51.

[0141] In a face-up type LED chip 51, the electrode 83 can be made of a light-transmitting material, such as oxides such as ITO (In2O3-SnO2), AZO (Al2O3-ZnO), In-Zn oxide (In2O3-ZnO), GZO (GeO2-ZnO), and ICO (In2O3-CeO2). In a face-up type LED chip 51, light is mainly emitted towards the electrode 87. In a face-down type LED chip 51, the electrode 83 can be made of a light-reflecting material, such as metals such as silver, aluminum, and rhodium. In a face-down type LED chip 51, light is mainly emitted towards the substrate 71.

[0142] As the substrate 71, oxide single crystals such as sapphire single crystal (Al2O3), spinel single crystal (MgAl2O4), ZnO single crystal, LiAlO2 single crystal, LiGaO2 single crystal, MgO single crystal, Si single crystal, SiC single crystal, GaAs single crystal, AlN single crystal, GaN single crystal, and boride single crystal such as ZrB2 can be used. In a face-down type LED chip 51, it is preferable to use a light-transmitting material for the substrate 71, for example, a light-transmitting sapphire single crystal can be used.

[0143] A buffer layer (not shown) may be provided between the substrate 71 and the n-type semiconductor layer 75. The buffer layer has the function of mitigating the difference in lattice constants between the substrate 71 and the n-type semiconductor layer 75.

[0144] The LED chip 51 that can be used as a light-emitting diode chip preferably has a horizontal structure in which electrodes 85 and 87 are arranged on the same side, as shown in Figure 7A. By providing electrodes 85 and 87 of the LED chip 51 on the same side, connection to terminal electrodes is made easier, and the structure of the terminal electrodes can be simplified. Furthermore, the LED chip 51 that can be used as a light-emitting diode chip preferably has a face-down type. By using a face-down type LED chip 51, the light emitted from the LED chip 51 is efficiently emitted to the display surface side of the display device, resulting in a display device with high brightness. A commercially available LED chip may be used as the LED chip 51.

[0145] To obtain white light emission, a color conversion layer is used. The phosphor in the color conversion layer can be an organic resin layer with a phosphor printed or painted on its surface, or an organic resin layer with a phosphor mixed in. The color conversion layer can be made of a material that is excited by the light emitted by the LED chip 51 and emits light of the complementary color to the light emitted by the LED chip 51. With this configuration, the light emitted by the light-emitting diode chip and the light emitted by the phosphor combine to emit white light from the color conversion layer.

[0146] For example, by using an LED chip 51 that emits blue light and a phosphor that emits yellow light, which is the complementary color of blue, a configuration can be made in which white light is emitted from the color conversion layer. Typical LED chips 51 capable of emitting blue light include diodes made of group 13 nitride compound semiconductors, and one example is In x Al y Ga 1-x-y There are diodes containing GaN systems, represented by the formula N(x is between 0 and 1, y is between 0 and 1, and x+y is between 0 and 1). A typical example of a phosphor that is excited by blue light and emits yellow light is Y3Al5O 12 Examples include Ce(YAG:Ce), (Ba,Sr,Mg)2SiO4:Eu,Mn, etc.

[0147] For example, it is possible to adopt a configuration in which white light is emitted from a color conversion layer by using an LED chip 51 that emits cyan light and a phosphor that emits red light, which is the complementary color of cyan.

[0148] The color conversion layer may have a plurality of types of phosphors, and may also be configured such that each phosphor emits light of a different color. For example, it is possible to adopt a configuration in which white light is emitted from a color conversion layer by using an LED chip 51 that emits blue light, a phosphor that emits red light, and a phosphor that emits green light. Representative examples of phosphors that are excited by blue light and emit red light include (Ca,Sr)S:Eu, Sr2Si7Al3ON 13 :Eu, etc. Representative examples of phosphors that are excited by blue light and emit green light include SrGa2S4:Eu, Sr3Si 13 Al3O2N 21 :Eu, etc.

[0149] Further, it is possible to adopt a configuration in which white light is emitted from a color conversion layer by using an LED chip 51 that emits near-ultraviolet light or violet light, a phosphor that emits red light, a phosphor that emits green light, and a phosphor that emits blue light. Representative examples of phosphors that are excited by near-ultraviolet light or violet light and emit red light include (Ca,Sr)S:Eu, Sr2Si7Al3ON 13 :Eu, La2O2S:Eu, etc. Representative examples of phosphors that are excited by near-ultraviolet light or violet light and emit green light include SrGa2S4:Eu, Sr3Si 13 Al3O2N 21 :Eu, etc. Representative examples of phosphors that are excited by near-ultraviolet light or violet light and emit blue light include Sr 10 (PO4)6Cl2:Eu, (Sr,Ba,Ca) 10 (PO4)6Cl2:Eu, etc.

[0150] Near-ultraviolet light has its maximum peak in the emission spectrum at wavelengths of 200 nm to 380 nm. Violet light has its maximum peak in the emission spectrum at wavelengths of 380 nm to 430 nm. Blue light has its maximum peak in the emission spectrum at wavelengths of 430 nm to 490 nm. Green light has its maximum peak in the emission spectrum at wavelengths of 490 nm to 550 nm. Yellow light has its maximum peak in the emission spectrum at wavelengths of 550 nm to 590 nm. Red light has its maximum peak in the emission spectrum at wavelengths of 640 nm to 770 nm.

[0151] When a color conversion layer has a phosphor that emits yellow light and an LED chip 51 that emits blue light is used, the light emitted by the LED chip 51 preferably has a maximum peak in its emission spectrum at a wavelength of 330 nm to 500 nm, more preferably at a wavelength of 430 nm to 490 nm, and even more preferably at a wavelength of 450 nm to 480 nm. This allows the phosphor to be excited efficiently. Furthermore, by having a maximum peak in the emission spectrum of the light emitted by the LED chip 51 at 430 nm to 490 nm, the blue light, which is the excitation light, and the yellow light from the phosphor can be mixed to produce white light. Moreover, by having a maximum peak in the light emitted by the LED chip 51 at 450 nm to 480 nm, a highly pure white light can be produced.

[0152] The above is a description of an example configuration of the LED chip 51.

[0153] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0154] (Embodiment 4) In Embodiment 1, an example using a rectangular sapphire substrate was shown, but in this embodiment, an example using a single-crystal silicon substrate is shown. When using a single-crystal silicon substrate, it is possible to form a drive circuit for light-emitting diodes (for example, a demultiplexer circuit or a digital-to-analog conversion circuit), and furthermore, a drive circuit for sensors can also be formed.

[0155] Figure 8A1 shows a perspective view of the single-crystal silicon substrate 71R. For the red LED chip, semiconductor layers having an n-type semiconductor layer, an emissive layer, and a p-type semiconductor layer, as well as electrodes that function as a cathode and electrodes that function as an anode, are formed on the single-crystal silicon substrate 71R.

[0156] Multiple red LED chips are formed on a single-crystal silicon substrate 71R, and by separating the single-crystal silicon substrate 71R along the LED chip section, multiple red LED chips can be fabricated.

[0157] Figure 8A2 shows a perspective view of the single-crystal silicon substrate 71G. For the green LED chip, semiconductor layers having an n-type semiconductor layer, an emissive layer, and a p-type semiconductor layer, as well as electrodes that function as a cathode and electrodes that function as an anode, are formed on the single-crystal silicon substrate 71G.

[0158] Multiple green LED chips are formed on a single-crystal silicon substrate 71G, and by separating the single-crystal silicon substrate 71G along the LED chip section, multiple green LED chips can be fabricated.

[0159] Figure 8A3 shows a perspective view of the single-crystal silicon substrate 71B. For the blue LED chip, semiconductor layers having an n-type semiconductor layer, an emissive layer, and a p-type semiconductor layer, as well as electrodes that function as a cathode and electrodes that function as an anode, are formed on the single-crystal silicon substrate 71B.

[0160] Multiple blue LED chips are formed on a single-crystal silicon substrate 71B, and by separating the single-crystal silicon substrate 71B along the LED chip section, multiple blue LED chips can be fabricated.

[0161] Furthermore, a CMOS image sensor is formed on the single-crystal silicon substrate 71S. The CMOS image sensor can be fabricated using known techniques. A top-illuminated CMOS image sensor is used. A light-receiving region 82 is also formed. The light-receiving region 82 may be configured to have a microlens or a colored layer in the region overlapping with the light-receiving region 82.

[0162] To avoid overlapping with the light-receiving area 82, the red, green, and blue LED chips are mounted separately. Figure 8B is a perspective view showing how each light-emitting diode is picked up and mounted onto the single-crystal silicon substrate 71S.

[0163] Furthermore, the single-crystal silicon substrate 71S is provided with terminal electrodes and drive circuits electrically connected to the terminal electrodes, for mounting red, green, and blue LED chips, respectively. Of course, the drive circuits for the CMOS sensor may also be provided on the single-crystal silicon substrate 71S. Alternatively, these drive circuits may be formed separately on semiconductor substrates, and the semiconductor substrates may be bonded together to make electrical connections.

[0164] For example, a single-crystal silicon substrate with a drive circuit formed using a planar transistor as shown in Figure 9A may be bonded to the substrate. Alternatively, a single-crystal silicon substrate with a drive circuit formed using a fin-type transistor may be bonded to the substrate.

[0165] Alternatively, as shown in Figure 9B, the transistor may have a semiconductor layer 545 made of a silicon thin film. The semiconductor layer 545 can be, for example, single-crystal silicon (SOI (Silicon on Insulator)) formed on an insulating layer 546 on a silicon substrate 211.

[0166] [Example of OS transistor configuration] Alternatively, a single-crystal silicon substrate on which an OS transistor is provided to form a drive circuit may be bonded to another single-crystal silicon substrate.

[0167] Figure 10A shows the details of the OS transistor. The OS transistor shown in Figure 10A has a self-aligned configuration in which an insulating layer is provided on a stack of oxide semiconductor layers and conductive layers, and an opening is provided that reaches the oxide semiconductor layer to form the source electrode 705 and drain electrode 706.

[0168] The OS transistor may have a channel formation region, a source region 703, and a drain region 704 formed in an oxide semiconductor layer, as well as a gate electrode 701 and a gate insulating film 702. At least the gate insulating film 702 and the gate electrode 701 are provided in the opening. An oxide semiconductor layer 707 may be further provided in the opening.

[0169] The OS transistor may also have a self-aligned configuration, as shown in Figure 10B, where the gate electrode 701 is used as a mask to form a source region 703 and a drain region 704 in the semiconductor layer.

[0170] Alternatively, as shown in Figure 10C, a non-self-aligned top-gate transistor may be used, having a region where the source electrode 705 or drain electrode 706 and the gate electrode 701 overlap.

[0171] Although the OS transistor is shown with a back gate 535, it may also have a structure without a back gate. The back gate 535 may be electrically connected to the front gate of an opposing transistor, as shown in the cross-sectional view in the channel width direction of the transistor in Figure 10D. Note that Figure 10D shows the B1-B2 cross-section shown in Figure 10A as an example, but the same applies to transistors with other structures. Furthermore, the back gate 535 may be configured to be supplied with a fixed potential different from that of the front gate.

[0172] As the semiconductor material used in OS transistors, metal oxides with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used. Typical examples include indium-containing oxide semiconductors, such as CAAC-OS or CAC-OS, which will be described later. CAAC-OS has stable atoms constituting the crystal, making it suitable for transistors where reliability is important. In addition, CAC-OS exhibits high mobility characteristics, making it suitable for transistors that require high-speed operation.

[0173] OS transistors exhibit extremely low off-current characteristics of a few yA / μm (current value per 1 μm channel width) due to the large energy gap of the semiconductor layer. Furthermore, OS transistors have characteristics that differ from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, enabling the formation of highly reliable circuits with high voltage resistance. Additionally, variations in electrical characteristics caused by crystalline non-uniformity, which are problematic in Si transistors, are less likely to occur in OS transistors.

[0174] The semiconductor layer of an OS transistor can be a film represented as an In-M-Zn oxide containing, for example, indium, zinc, and M (one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). In-M-Zn oxides can typically be formed by sputtering, or by ALD (Atomic Layer Deposition).

[0175] For sputtering to form an In-M-Zn oxide, the atomic ratio of the metal elements in the sputtering target is preferably such that In≧M and Zn≧M. Preferred atomic ratios for such a sputtering target include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, and In:M:Zn=5:1:8. The atomic ratio of the resulting semiconductor layer includes a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the sputtering target.

[0176] For the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1 × 10⁻¹⁶. 17 / cm 3 The following is preferably 1 × 10 15 / cm 3 More preferably 1 × 10 13 / cm 3 More preferably 1 × 10 11 / cm 3 More preferably 1 × 10 10 / cm 3 It is less than 1 × 10 -9 / cm 3 The above oxide semiconductors can be used. Such oxide semiconductors are called high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. These oxide semiconductors have a low defect level density and are considered to be oxide semiconductors with stable properties.

[0177] However, this is not limited to these, and an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor required. Furthermore, in order to obtain the required semiconductor characteristics of the transistor, it is preferable to set the carrier density and impurity concentration of the semiconductor layer, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. to appropriate values.

[0178] In oxide semiconductors that constitute a semiconductor layer, the presence of silicon or carbon, which are among the Group 14 elements, increases oxygen vacancies and leads to n-type semiconductor formation. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 × 10⁻¹⁰. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0179] Furthermore, alkali metals and alkaline earth metals can generate carriers when bonded with oxide semiconductors, which can increase the transistor's off-current. For this reason, the concentration of alkali metals or alkaline earth metals in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0180] Furthermore, if nitrogen is present in the oxide semiconductor constituting the semiconductor layer, electrons, which act as carriers, are generated, increasing the carrier density and making it easier to achieve n-type characteristics. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. For this reason, the nitrogen concentration in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 5 × 10⁻¹⁰. 18 atoms / cm 3 The following is preferable:

[0181] Furthermore, if the oxide semiconductor constituting the semiconductor layer contains hydrogen, it can react with oxygen bonded to metal atoms to form water, thus potentially creating oxygen vacancies in the oxide semiconductor. If oxygen vacancies are present in the channel formation region of the oxide semiconductor, the transistor may exhibit normally-on characteristics. Moreover, a defect containing hydrogen can function as a donor, generating electrons as carriers. Additionally, some of the hydrogen may combine with oxygen bonded to metal atoms to generate electrons as carriers. Therefore, transistors using oxide semiconductors with a high hydrogen content tend to exhibit normally-on characteristics.

[0182] Defects where hydrogen fills an oxygen vacancy can function as donors in oxide semiconductors. However, quantitatively evaluating such defects is difficult. Therefore, in oxide semiconductors, evaluation is sometimes done using carrier concentration rather than donor concentration. Accordingly, in this specification, the carrier concentration, assuming no electric field is applied, may be used as a parameter for oxide semiconductors, rather than the donor concentration. In other words, "carrier concentration" as described in this specification may sometimes be rephrased as "donor concentration."

[0183] Therefore, it is preferable that the hydrogen content in the oxide semiconductor be reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by secondary ion mass spectrometry (SIMS) should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 It should be less than [amount]. By using an oxide semiconductor with sufficiently reduced impurities such as hydrogen in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0184] Furthermore, the semiconductor layer may have a non-single-crystal structure, for example. Non-single-crystal structures include, for example, CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) having crystals oriented along the c axis, polycrystalline structures, microcrystalline structures, or amorphous structures. Among non-single-crystal structures, the amorphous structure has the highest defect level density, while CAAC-OS has the lowest defect level density.

[0185] An amorphous oxide semiconductor film, for example, has a disordered atomic arrangement and does not contain crystalline components. Alternatively, an amorphous oxide semiconductor film, for example, has a completely amorphous structure and does not contain crystalline parts.

[0186] Furthermore, the semiconductor layer may be a mixed film having two or more regions from among amorphous, microcrystalline, polycrystalline, CAAC-OS, and single-crystal structures. The mixed film may have a single-layer structure or a stacked structure that includes, for example, two or more of the regions described above.

[0187] The following describes the configuration of CAC (Cloud-Aligned Composite)-OS, which is one form of a non-single-crystal semiconductor layer.

[0188] CAC-OS is a material composition in which the elements constituting the oxide semiconductor are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or close to that size. In the following, in an oxide semiconductor, a state in which one or more metal elements are unevenly distributed, and the regions containing the metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0189] Furthermore, the oxide semiconductor preferably contains at least indium. It is particularly preferable that it contains indium and zinc. In addition, it may also contain one or more elements selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium.

[0190] For example, CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide within CAC-OS may be specifically called CAC-IGZO) refers to indium oxide (hereinafter, InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc oxide (hereinafter, In X2 Zn Y2 O Z2 (Let X2, Y2, and Z2 be real numbers greater than 0.) and gallium oxide (hereinafter referred to as GaO X3 (Let X3 be a real number greater than 0.) or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (Let X4, Y4, and Z4 be real numbers greater than 0).) The material separates into mosaic-like structures, and the mosaic-like InO X1 , or In X2 Zn Y2 O Z2 However, it is a uniformly distributed structure within the membrane (hereinafter also referred to as a cloud-like structure).

[0191] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 This is a composite oxide semiconductor having a structure in which a region in which is the main component is mixed with another region. In this specification, for example, if the atomic ratio of In to element M in the first region is greater than the atomic ratio of In to element M in the second region, then the first region is considered to have a higher concentration of In compared to the second region.

[0192] Note that IGZO is a common name and can refer to a single compound composed of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 Examples include crystalline compounds represented by (-1 ≤ x0 ≤ 1, where m0 is any number).

[0193] The above-mentioned crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure. A CAAC structure is a crystalline structure in which multiple IGZO nanocrystals are c-axis oriented and linked together without orientation in the ab-plane.

[0194] On the other hand, CAC-OS refers to the material composition of oxide semiconductors. CAC-OS is a material composition containing In, Ga, Zn, and O, in which regions observed as nanoparticles mainly composed of Ga and regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic-like manner. Therefore, in CAC-OS, the crystal structure is a secondary element.

[0195] Furthermore, CAC-OS does not include layered structures of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is not included.

[0196] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 In some cases, a clear boundary may not be observable in a region where [this component] is the main component.

[0197] Furthermore, if gallium is replaced with one or more elements selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, CAC-OS refers to a configuration in which regions observed as nanoparticles mainly composed of the said metal element and regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic pattern.

[0198] CAC-OS can be formed by sputtering, for example, under conditions where the substrate is not intentionally heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. Furthermore, a lower ratio of oxygen gas flow rate to the total deposition gas flow rate during film formation is preferable; for example, an oxygen gas flow rate ratio of 0% or more and less than 30%, preferably 0% or more and 10% or less, is preferable.

[0199] CAC-OS is characterized by the absence of a clear peak when measured using the θ / 2θ scan method, an out-of-plane X-ray diffraction (XRD) measurement technique. In other words, X-ray diffraction measurements indicate that no orientation in the ab-plane direction or the c-axis direction of the measurement region is observed.

[0200] Furthermore, in the electron diffraction pattern obtained by irradiating CAC-OS with an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam), a ring-shaped region of high brightness (ring region) and multiple bright spots are observed within this ring region. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure that does not have orientation in the planar and cross-sectional directions.

[0201] Also, for example, in CAC-OS in In-Ga-Zn oxide, by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX), GaO X3 regions where it is the main component and In X2 Zn Y2 O Z2 or regions where InO X1 is the main component are unevenly distributed and mixed, and it can be confirmed that they have a structure.

[0202] CAC-OS has a structure different from that of an IGZO compound in which metal elements are uniformly distributed and has properties different from those of an IGZO compound. That is, CAC-OS has regions where components such as GaO X3 are the main components and regions where In X2 Zn Y2 O Z2 or regions where InO X1 is the main component are phase-separated from each other, and the regions with each element as the main component have a mosaic-like structure.

[0203] Here, regions where In X2 Zn Y2 O Z2 or regions where InO X1 is the main component are regions with higher conductivity compared to regions where components such as GaO X3 are the main components. That is, In X2 Zn Y2 O Z2 or regions where InO X1 is the main component exhibit conductivity as an oxide semiconductor when carriers flow through them. Therefore, when regions where In X2 Zn Y2 O Z2 or regions where InO X1 is the main component are distributed in a cloud-like manner in the oxide semiconductor, high field-effect mobility (μ) can be realized.

[0204] On the other hand, regions where components such as GaO X3 are the main components are In X2 Zn Y2 O Z2 or regions where InOX1 is a region with high insulation compared to the region where it is the main component. That is, the region where X3 such as is the main component is distributed in the oxide semiconductor, suppressing the leakage current and enabling a good switching operation.

[0205] Therefore, when CAC-OS is used in a semiconductor device, the insulation caused by X3 such as and the conductivity caused by X2 In Y2 Zn Z2 O X1 or InO on act complementarily to achieve a high on-current (I

[0206] Also, the semiconductor device using CAC-OS has high reliability. Therefore, CAC-OS is suitable as a constituent material for various semiconductor devices.

[0207] Note that for conductors that can be used as wiring, electrodes, and plugs for electrical connection between devices, metal elements selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc., alloys containing the above-mentioned metal elements as components, or alloys combining the above-mentioned metal elements can be appropriately selected and used. The conductor is not limited to a single layer and may be a plurality of layers composed of different materials.

[0208] A display panel can be fabricated by mounting multiple light-emitting diodes in a row or column direction and separating a single-crystal silicon substrate 71S along the divisions so that these diodes constitute a display area. However, display panels using a single-crystal silicon substrate are smaller than the size of the single-crystal silicon substrate, limiting them to small display panels. Furthermore, by narrowing the spacing between adjacent display areas and arranging multiple small display panels in a row or column direction, a large display panel can be realized.

[0209] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0210] (Embodiment 5) In this embodiment, an example is shown in which an organic photodiode having an organic compound in its photoelectric conversion layer is used as the light-receiving element 212. Organic photodiodes are easy to make thin, light, and large in area. In addition, because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0211] Figure 11 shows a schematic cross-sectional view of a display device 50A according to one embodiment of the present invention. The display device 50A has a light-receiving area 110, a light-emitting area 190, and a light-emitting area 180. The light-emitting area 190 has a light-emitting diode comprising a color conversion layer 797G and a blue light-emitting diode 11B. The light-emitting area 180 corresponds to a light-emitting diode (emitting green light) comprising a color conversion layer 797G and a blue light-emitting diode 11B.

[0212] In the configuration of the light-emitting region 190 and the light-emitting region 180, and their surrounding areas, the configuration other than the color conversion layer can be the same. Therefore, the details of the light-emitting region 190 will be explained here, and the explanation of the light-emitting region 180 will be omitted.

[0213] The light-emitting region 190 has terminal electrodes 191, a conductive layer 774, and conductive bumps 791 and 793. In the display device 50A shown in Figure 11, the bumps 791 and 793 are shown to be at different heights. However, if the cathode electrode and anode electrode of the blue light-emitting diode 11B are at the same height, the bumps 791 and 793 can be configured to be at approximately the same height.

[0214] The light-receiving region 110 includes a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, a common layer 114, and a common electrode 115.

[0215] The pixel electrode 111, terminal electrode 191, common layer 112, photoelectric conversion layer 113, common layer 114, and common electrode 115 may each be a single-layer structure or a stacked structure.

[0216] The pixel electrode 111, terminal electrode 191, and conductive layer 774 are located on the insulating layer 214. The pixel electrode 111, terminal electrode 191, and conductive layer 774 can be formed using the same material and the same process.

[0217] The common layer 112 is located on the pixel electrode 111. The common layer 112 is a layer used in common by the light-receiving elements 212 that are placed in each pixel.

[0218] The photoelectric conversion layer 113 has a region that overlaps with the pixel electrode 111 via the common layer 112. The photoelectric conversion layer 113 contains a first organic compound.

[0219] The common layer 114 is located on the common layer 112 and the photoelectric conversion layer 113. The common layer 114 is a layer used in common by the light-receiving elements 212 that are placed in each pixel.

[0220] The common electrode 115 has a region that overlaps with the pixel electrode 111 via the common layer 112, the photoelectric conversion layer 113, and the common layer 114. The common electrode 115 is a layer used in common by the light-receiving elements 212 that are placed in each pixel.

[0221] In this embodiment of the display device, an organic compound is used for the photoelectric conversion layer 113 of the light-receiving element 212. Furthermore, the light-emitting region 190 and the light-receiving region 110 can be formed on the same substrate. Therefore, the light-receiving region 110 can be incorporated into the display device.

[0222] The display device 50A has a light-receiving area 110, a light-emitting area 190, a transistor 41, and a transistor 42 between a pair of substrates (an insulating substrate 151 and an insulating substrate 152).

[0223] As insulating substrates 151 and 152, glass substrates, quartz substrates, or plastic films can be used. As plastic films, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. can be used.

[0224] In the light-receiving region 110, the common layer 112, the photoelectric conversion layer 113, and the common layer 114, located between the pixel electrode 111 and the common electrode 115, can also be called organic layers (layers containing organic compounds). The pixel electrode 111 preferably has the function of reflecting near-infrared light. The common electrode 115 has the function of transmitting visible light and near-infrared light.

[0225] The light-receiving element 212 has the function of detecting light. Specifically, the light-receiving element 212 is a photoelectric conversion element that converts incident light 22 into an electrical signal.

[0226] A light-shielding layer 148 is provided on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 148 has openings at positions that overlap with the light-receiving area 110 and at positions that overlap with the light-emitting area 190. By providing the light-shielding layer 148, the range in which the light-receiving area 110 detects light can be controlled.

[0227] As the light-shielding layer 148, a material that blocks the light emitted by the light-emitting diode 11B can be used. Preferably, the light-shielding layer 148 absorbs visible light and near-infrared light. As the light-shielding layer 148, for example, a metal material, or a resin material containing a pigment (such as carbon black) or dye can be used. The light-shielding layer 148 may also have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0228] Furthermore, it is preferable that a filter 149 is provided in the opening of the light-shielding layer 148 that overlaps with the light-receiving area 110, which cuts out light with wavelengths shorter than the wavelength of light (near-infrared light) (received by the light-receiving element 212). As the filter 149, for example, a long-pass filter that cuts out light with wavelengths shorter than near-infrared light, or a band-pass filter that cuts out wavelengths in the visible light region can be used. As the filter that cuts out visible light, a resin film containing a dye, or a semiconductor film such as an amorphous silicon thin film can be used. By providing the filter 149, the incidence of visible light on the light-receiving element 212 can be suppressed, and near-infrared light can be detected with low noise.

[0229] The filter 149 may be provided stacked with the light-receiving element 212.

[0230] Alternatively, the filter 149 may be in the shape of a lens. The lens-shaped filter 149 is a convex lens having a convex surface on the substrate 151 side. It may also be arranged so that the substrate 152 side has a convex surface. When both the light-shielding layer 148 and the lens-shaped filter 149 are formed on the same surface of the substrate 152, the order of formation does not matter.

[0231] Alternatively, the filter 149 may be omitted. If the characteristics of the light-receiving element 212 indicate that it is not sensitive to visible light, or that its sensitivity to near-infrared light is sufficiently higher than that of visible light, the filter 149 can be omitted. In this case, a lens with a shape similar to that of the lens-type filter 149 may be placed on top of the light-receiving element 212. This lens may be made of a material that transmits visible light.

[0232] Here, as shown in Figure 11, the light-receiving area 110 can detect the light 22 that has been reflected by an object 60, such as a finger, from the light 21 emitted by the light-emitting diode 11B. However, there are cases where some of the light emitted by the light-emitting diode 11B is reflected within the display device 50A and enters the light-receiving area 110 without passing through the object 60.

[0233] The light-shielding layer 148 can suppress the effects of such stray light. For example, if the light-shielding layer 148 is not provided, the light 23a emitted by the light-emitting diode 11B may be reflected by the substrate 152, etc., and the reflected light 23b may be incident on the light-receiving region 110. By providing the light-shielding layer 148, the incident of reflected light 23b on the light-receiving element 212 can be suppressed. This reduces noise and improves the light-sensing accuracy of the light-receiving element 212.

[0234] The light-emitting region 190 has the function of emitting green light. Specifically, the light-emitting diode 11B is an electroluminescent device that emits blue light towards the substrate 152 when a voltage is applied between the terminal electrode 191 and the conductive layer 774, and then emits green light 21 by passing through the color conversion layer 797G.

[0235] In the light-emitting region 190, a color conversion layer 797G is provided on the substrate 151 side of the substrate 152 at a position overlapping with the light-emitting diode 11B. In the light-emitting region 180, a color conversion layer 797R is provided on the substrate 151 side of the substrate 152 at a position overlapping with the light-emitting diode 11B.

[0236] In this embodiment, an example using a blue light-emitting diode 11B is shown, but it is not particularly limited. When using three types of light-emitting diodes 11R, 11B, and 11G, a color conversion layer does not need to be provided. Also, a light-emitting diode that emits ultraviolet light can be used instead of light-emitting diode 11B. When a light-emitting diode that emits ultraviolet light is used, a color conversion layer capable of converting to white light and a colored layer may be laminated. When ultraviolet light passes through the color conversion layer, white light is emitted, and when it passes through the colored layer that transmits red light, it is emitted as red light towards the display surface.

[0237] Preferably, at least a portion of the circuit electrically connected to the light-receiving element 212 is formed using the same material and process as the circuit electrically connected to the light-emitting diode 11B. This allows for a thinner display device and simplifies the manufacturing process compared to forming the two circuits separately.

[0238] The light-receiving element 212 is preferably covered with a protective layer 195. Furthermore, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is preferably made of a material with high light transmittance to allow light to pass through.

[0239] Furthermore, the light-emitting diodes 11B are bonded together by the adhesive layer 142, which fills the gaps between adjacent light-emitting diodes, and the substrates 152 and 151 are bonded together.

[0240] Alternatively, the configuration may be one in which the light-shielding layer 148 is not provided.

[0241] The substrate 152 may be an optical component such as a scattering plate, an input device such as a touch sensor panel, or a configuration in which two or more of these are stacked.

[0242] The pixel electrode 111 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214.

[0243] The terminal electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 has a function of controlling the driving of the light-emitting diode 11B.

[0244] The transistor 41 and the transistor 42 are provided on the same layer (substrate 151 in FIG. 11).

[0245] [Configuration example of transistor] Hereinafter, a cross-sectional configuration example of the transistors 41 and 42 applicable to the display device 50A will be described.

[0246] [Configuration example 1] FIG. 12A is a cross-sectional view including the transistor 410.

[0247] The transistor 410 is provided on the substrate 401 and is a transistor in which polycrystalline silicon is applied to the semiconductor layer. For example, the transistor 410 corresponds to the transistor 42. Also, the transistor 42 corresponds to the transistor 251 in the circuit of FIG. 6A. That is, FIG. 12A is an example in which one of the source and drain of the transistor 410 is electrically connected to the light-emitting diode. As one of the transistors in which polycrystalline silicon is applied to the semiconductor layer, a transistor having low-temperature poly-silicon (LTPS (Low Temperature Poly Silicon)) (hereinafter also referred to as an LTPS transistor) can be used. The LTPS transistor has a high field-effect mobility and good frequency characteristics.

[0248] The transistor 410 has a semiconductor layer 411, an insulating layer 412, a conductive layer 413, etc. The semiconductor layer 411 has a channel formation region 411i and a low-resistance region 411n. The semiconductor layer 411 has silicon. The semiconductor layer 411 preferably has polycrystalline silicon. A part of the insulating layer 412 functions as a gate insulating layer. A part of the conductive layer 413 functions as a gate electrode.

[0249] Note that the semiconductor layer 411 may be configured to include a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor characteristics. In this case, the transistor 410 can be referred to as an OS transistor.

[0250] The low-resistance region 411n is a region containing impurity elements. For example, when the transistor 410 is an n-channel transistor, phosphorus, arsenic, etc. may be added to the low-resistance region 411n. On the other hand, when it is a p-channel transistor, boron, aluminum, etc. may be added to the low-resistance region 411n. Further, in order to control the threshold voltage of the transistor 410, the above-described impurities may be added to the channel formation region 411i.

[0251] An insulating layer 421 is provided on the substrate 401. The semiconductor layer 411 is provided on the insulating layer 421. The insulating layer 412 is provided so as to cover the semiconductor layer 411 and the insulating layer 421. The conductive layer 413 is provided at a position on the insulating layer 412 that overlaps with the semiconductor layer 411.

[0252] Also, an insulating layer 422 is provided so as to cover the conductive layer 413 and the insulating layer 412. On the insulating layer 422, a conductive layer 414a and a conductive layer 414b are provided. The conductive layer 414a and the conductive layer 414b are electrically connected to the low-resistance region 411n at openings provided in the insulating layer 422 and the insulating layer 412. A part of the conductive layer 414a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 414b functions as the other of the source electrode and the drain electrode. Further, an insulating layer 423 is provided so as to cover the conductive layer 414a, the conductive layer 414b, and the insulating layer 422.

[0253] On the insulating layer 423, a conductive layer 427 that functions as a pixel electrode is provided. The conductive layer 427 is provided on the insulating layer 423 and is electrically connected to the conductive layer 414b at an opening provided in the insulating layer 423. Although omitted here, by electrically connecting an electrode of an LED to the conductive layer 427, an LED can be mounted on the drive circuit.

[0254] [Configuration Example 2] Figure 12B shows a transistor 410a having a pair of gate electrodes. The transistor 410a shown in Figure 12B differs from that in Figure 12A mainly in that it has a conductive layer 415 and an insulating layer 416.

[0255] The conductive layer 415 is provided on the insulating layer 421. Furthermore, an insulating layer 416 is provided covering the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided such that at least the channel-forming region 411i overlaps with the conductive layer 415 via the insulating layer 416.

[0256] In the transistor 410a shown in Figure 12B, a portion of the conductive layer 413 functions as a first gate electrode, and a portion of the conductive layer 415 functions as a second gate electrode. At the same time, a portion of the insulating layer 412 functions as a first gate insulating layer, and a portion of the insulating layer 416 functions as a second gate insulating layer.

[0257] Here, when electrically connecting the first gate electrode and the second gate electrode, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 412 and the insulating layer 416 in a region not shown. Also, when electrically connecting the second gate electrode to the source or drain, the conductive layer 414a or conductive layer 414b and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 422, the insulating layer 412, and the insulating layer 416 in a region not shown.

[0258] When LTPS transistors are applied to all transistors constituting a pixel, transistor 410 as exemplified in Figure 12A, or transistor 410a as exemplified in Figure 12B, can be applied. In this case, transistor 410a may be used for all transistors constituting the pixel, transistor 410 may be applied to all transistors, or transistor 410a and transistor 410 may be used in combination.

[0259] [Configuration Example 3] The following describes an example of a configuration that includes both transistors with silicon semiconductor layers and transistors with metal oxide semiconductor layers.

[0260] Figure 12C shows a schematic cross-sectional view including transistors 410a and 450.

[0261] For transistor 410a, the above configuration example 2 can be used. Although an example using transistor 410a is shown here, a configuration with transistors 410 and 450 is also possible, or a configuration with all three transistors 410, 410a, and 450 is also possible.

[0262] Transistor 450 is a transistor in which a metal oxide is applied to the semiconductor layer. The configuration shown in Figure 12C is an example in which, for example, transistor 450 corresponds to transistor 436 in the circuit of Figure 6A, and transistor 410a corresponds to transistor 251. That is, Figure 12C is an example in which one of the source and drain of transistor 410a is electrically connected to a conductive layer 427 that is electrically joined to the electrodes of the LED.

[0263] Figure 12C also shows an example where transistor 450 has a pair of gates.

[0264] The transistor 450 has a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, etc. A portion of the conductive layer 453 functions as the first gate of the transistor 450, and a portion of the conductive layer 455 functions as the second gate of the transistor 450. At this time, a portion of the insulating layer 452 functions as the first gate insulating layer of the transistor 450, and a portion of the insulating layer 422 functions as the second gate insulating layer of the transistor 450.

[0265] The conductive layer 455 is provided on the insulating layer 412. The insulating layer 422 covers the conductive layer 455. The semiconductor layer 451 is provided on the insulating layer 422. The insulating layer 452 covers the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided on the insulating layer 452 and has a region that overlaps with the semiconductor layer 451 and the conductive layer 455.

[0266] Furthermore, an insulating layer 426 is provided covering the insulating layer 452 and the conductive layer 453. Conductive layers 454a and 454b are provided on the insulating layer 426. Conductive layers 454a and 454b are electrically connected to the semiconductor layer 451 at openings provided in the insulating layer 426 and the insulating layer 452. A portion of the conductive layer 454a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 454b functions as the other of the source electrode and drain electrode. In addition, an insulating layer 423 is provided covering the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0267] Here, it is preferable that the conductive layers 414a and 414b, which are electrically connected to the transistor 410a, are formed by processing the same conductive film as conductive layers 454a and 454b. Figure 12C shows a configuration in which conductive layers 414a, 414b, 454a, and 454b are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 426) and contain the same metal element. In this case, conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, insulating layer 452, insulating layer 422, and insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0268] Also, the conductive layer 413 that functions as the first gate electrode of the transistor 410a and the conductive layer 455 that functions as the second gate electrode of the transistor 450 are preferably formed by processing the same conductive film. In FIG. 12C, the conductive layer 413 and the conductive layer 455 are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 412) and have a configuration including the same metal element. This is preferable because the manufacturing process can be simplified.

[0269] In FIG. 12C, the insulating layer 452 that functions as the first gate insulating layer of the transistor 450 is configured to cover the end portion of the semiconductor layer 451. However, as in the transistor 450a shown in FIG. 12D, the insulating layer 452 may be processed so that the upper surface shape thereof coincides with or substantially coincides with that of the conductive layer 453.

[0270] As shown in FIGS. 12C and 12D, by adopting a configuration having both a transistor in which silicon is applied to the semiconductor layer and a transistor in which a metal oxide is applied to the semiconductor layer, a semiconductor device with low power consumption and high driving ability can be realized. Also, a configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. As a more preferable example, it is preferable to apply an OS transistor to a transistor that functions as a switch for controlling conduction and non - conduction between wirings, and apply an LTPS transistor to a transistor that controls current.

[0271] In this specification and the like, "the upper surface shape is substantially coincident" means that at least a part of the contour overlaps between the stacked layers. For example, it includes the case where the upper layer and the lower layer are processed by the same mask pattern or a part thereof is processed by the same mask pattern. However, strictly speaking, the contours may not overlap exactly, and the upper layer may be located inside the lower layer or the upper layer may be located outside the lower layer. In this case, it is also said that "the upper surface shape is substantially coincident".

[0272] In this example, transistor 410a corresponds to transistor 251 and is electrically connected to the pixel electrode, but this is not the only example. For example, transistor 450 or transistor 450a may correspond to transistor 251. In this case, transistor 410a corresponds to transistor 436, transistor 434, or another transistor.

[0273] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0274] (Embodiment 6) This embodiment describes electronic equipment to which a semiconductor device according to one aspect of the present invention can be applied.

[0275] A semiconductor device according to one aspect of the present invention can be applied to the display unit of an electronic device. Therefore, it is possible to realize an electronic device with high display quality, or an extremely high-definition electronic device, or a highly reliable electronic device.

[0276] Electronic devices using a semiconductor device according to one aspect of the present invention include televisions, display devices such as monitors, lighting devices, desktop or notebook personal computers, word processors, and DVDs (Digital Versatile). Examples include image playback devices that play still images or videos stored on recording media such as discs, portable CD players, radios, tape recorders, headphone stereos, stereos, desk clocks, wall clocks, cordless telephone handsets, transceivers, car phones, mobile phones, personal digital assistants, tablet devices, portable game consoles, fixed game machines such as pachinko machines, calculators, electronic organizers, e-book readers, electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, electric fans, hair dryers, air conditioning equipment such as air conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, tools such as chainsaws, smoke detectors, and medical equipment such as dialysis machines. Furthermore, industrial equipment such as guide lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, and energy storage devices for power leveling and smart grids can also be included in the category of electronic equipment. In addition, mobile devices propelled by engines using fuel or electric motors using electricity from energy storage devices may also be included in the category of electronic equipment. Examples of such mobile devices include electric vehicles (EVs), hybrid vehicles (HVs) that combine internal combustion engines and electric motors, plug-in hybrid vehicles (PHVs), tracked vehicles in which the tires and wheels of these vehicles are replaced with tracks, motorized bicycles including electric assist bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary probes, and spacecraft.

[0277] An electronic device according to one aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged using contactless power transmission.

[0278] Examples of secondary batteries include lithium-ion batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air batteries, nickel-zinc batteries, and silver-zinc batteries.

[0279] An electronic device according to one aspect of the present invention may have an antenna. By receiving signals with the antenna, the display unit can display images and information. Furthermore, if the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0280] An electronic device according to one aspect of the present invention may have sensors (including those with functions to measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0281] An electronic device according to one aspect of the present invention can have various functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0282] Furthermore, electronic devices having multiple display units may have functions such as displaying image information primarily on one part of the display unit and text information primarily on another part, or displaying a three-dimensional image by displaying images that take parallax into account on multiple display units. Furthermore, electronic devices having an image receiving unit may have functions such as capturing still images or moving images, automatically or manually correcting captured images, saving captured images to a recording medium (external or built into the electronic device), and displaying captured images on a display unit. It should be noted that the functions of an electronic device according to one aspect of the present invention are not limited to these, and it may have a variety of functions.

[0283] A semiconductor device according to one aspect of the present invention can display high-definition images. Therefore, it can be suitably used in portable electronic devices, wearable electronic devices, and e-book readers. For example, it can be suitably used in xR devices such as VR devices or AR devices.

[0284] Figure 13A shows the external appearance of the camera 8000 with the viewfinder 8100 attached.

[0285] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, etc. A detachable lens 8006 is also attached to the camera 8000. The lens 8006 and the housing of the camera 8000 may be integrated into a single unit.

[0286] Camera 8000 can take an image by pressing the shutter button 8004 or by touching the display unit 8002, which functions as a touch panel.

[0287] The housing 8001 has a mount with electrodes, and in addition to the viewfinder 8100, a strobe device and the like can be connected to it.

[0288] The viewfinder 8100 includes a housing 8101, a display unit 8102, buttons 8103, etc.

[0289] The housing 8101 is attached to the camera 8000 by a mount that engages with the camera 8000's mount. The viewfinder 8100 can display images and other data received from the camera 8000 on the display unit 8102.

[0290] Button 8103 functions as a power button, etc.

[0291] A semiconductor device according to one aspect of the present invention can be applied to the display unit 8002 of the camera 8000 and the display unit 8102 of the viewfinder 8100. The viewfinder 8100 may be built into the camera 8000. The size of the display area of ​​the display unit 8002 and the display unit 8102, i.e., the screen size, is 0.5 inches or more and 10 inches or less.

[0292] Figure 13B shows the external appearance of the head-mounted display 8200.

[0293] The head-mounted display 8200 includes a mounting section 8201, lenses 8202, a main unit 8203, a display unit 8204, a cable 8205, etc. The mounting section 8201 also has a built-in battery 8206.

[0294] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 8203 is equipped with a wireless receiver and can display received video information on display unit 8204. In addition, main unit 8203 is equipped with a camera and can use information about the user's eyeball or eyelid movements as an input means.

[0295] Furthermore, the attachment unit 8201 may be provided with multiple electrodes at a position that touches the user, capable of detecting the current flowing in accordance with the user's eye movements, and may have a function to recognize the user's gaze. It may also have a function to monitor the user's pulse rate based on the current flowing through the electrodes. In addition, the attachment unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function to display the user's biometric information on the display unit 8204, or a function to change the image displayed on the display unit 8204 in accordance with the user's head movements.

[0296] A semiconductor device according to one aspect of the present invention can be applied to the display unit 8204. The size of the display area of ​​the display unit 8204, i.e., the screen size, is 0.5 inches or more and 3 inches or less.

[0297] Figures 13C to 13E show the external appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixing device 8304, and a pair of lenses 8305.

[0298] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to position the display unit 8302 in a curved shape, as this allows the user to experience a greater sense of presence. Furthermore, by viewing different images displayed in different areas of the display unit 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to a single display unit 8302; two display units 8302 may be provided, with one display unit for each of the user's eyes.

[0299] A semiconductor device according to one aspect of the present invention can be applied to the display unit 8302. The semiconductor device according to one aspect of the present invention can also achieve extremely high resolution. For example, even when the display is magnified and viewed using the lens 8305 as shown in Figure 13E, the pixels are difficult for the user to see. In other words, the display unit 8302 can be used to allow the user to view a highly realistic image.

[0300] Figure 13F shows the external appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 has a pair of housings 8401, a mounting part 8402, and a cushioning member 8403. A display unit 8404 and a lens 8405 are provided inside each of the pair of housings 8401. By displaying different images on the pair of display units 8404, a three-dimensional display using parallax can be achieved.

[0301] The user can view the display unit 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism and its position can be adjusted according to the user's eyesight. The display unit 8404 is preferably a square or a horizontally elongated rectangle. This can enhance the sense of realism.

[0302] The mounting portion 8402 is preferably adjustable to the size of the user's face and has plasticity and elasticity to prevent it from slipping off. Furthermore, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as a bone conduction earphone. This eliminates the need for separate audio equipment such as earphones or speakers, allowing users to enjoy video and audio simply by wearing the device. The housing 8401 may also have a function to output audio data via wireless communication.

[0303] The mounting portion 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). By ensuring that the cushioning member 8403 is in close contact with the user's face, light leakage can be prevented, thereby enhancing the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that it adheres closely to the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, if the surface of a sponge or similar material is covered with cloth, leather (genuine leather or synthetic leather), gaps are less likely to form between the user's face and the cushioning member 8403, effectively preventing light leakage. In addition, using such materials is preferable because it feels good against the skin and does not make the user feel cold when worn in cold seasons. It is preferable that the components that come into contact with the user's skin, such as the cushioning member 8403 or the mounting portion 8402, are removable, as this makes cleaning or replacement easier.

[0304] Figure 14A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0305] A semiconductor device according to one embodiment of the present invention can be applied to the display unit 7000. The size of the display area of ​​the display unit 8204, i.e., the screen size, is 8 inches or more and 100 inches or less.

[0306] The television device 7100 shown in Figure 14A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0307] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0308] Figure 14B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0309] A semiconductor device according to one aspect of the present invention can be applied to the display unit 7000.

[0310] Figures 14C and 14D show examples of digital signage.

[0311] The digital signage 7300 shown in Figure 14C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may have LED lamps, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0312] Figure 14D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0313] In Figures 14C and 14D, a semiconductor device according to one embodiment of the present invention can be applied to the display unit 7000.

[0314] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0315] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0316] Furthermore, as shown in Figures 14C and 14D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0317] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0318] The information terminal 7550 shown in Figure 14E includes a housing 7551, a display unit 7552, a microphone 7557, a speaker unit 7554, a camera 7553, and an operation switch 7555. A semiconductor device according to one aspect of the present invention can be applied to the display unit 7552. The display unit 7552 also functions as a touch panel. Furthermore, the information terminal 7550 is equipped with an antenna, battery, etc. inside the housing 7551. The information terminal 7550 can be used, for example, as a smartphone, mobile phone, tablet information terminal, tablet personal computer, e-book reader, etc.

[0319] Figure 14F shows an example of a wristwatch-type information terminal. The information terminal 7660 comprises a housing 7661, a display unit 7662, a band 7663, a buckle 7664, an operation switch 7665, and input / output terminals 7666. The information terminal 7660 also includes an antenna and battery inside the housing 7661. The information terminal 7660 can run various applications such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games.

[0320] Furthermore, the display unit 7662 is equipped with a touch sensor and can be operated by touching the screen with a finger or stylus. For example, an application can be launched by touching the icon 7667 displayed on the display unit 7662. The operation switch 7665 can have various functions, including setting the time, turning the power on and off, turning wireless communication on and off, activating and deactivating silent mode, and activating and deactivating power saving mode. For example, the functions of the operation switch 7665 can also be configured by the operating system built into the information terminal 7660.

[0321] Furthermore, the information terminal 7660 is capable of performing standardized short-range wireless communication. For example, it can communicate with a wireless communication-enabled headset to make hands-free calls. The information terminal 7660 is also equipped with an input / output terminal 7666, which can be used to send and receive data with other information terminals. It can also be charged via the input / output terminal 7666. Note that charging may be performed by wireless power supply without using the input / output terminal 7666.

[0322] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments. [Explanation of symbols]

[0323] 10: Pixel, 11a: Electrode, 11B: Light-emitting diode, 11G: Light-emitting diode, 11IR: Light-emitting diode, 11R: Light-emitting diode, 11UV: Light-emitting diode, 11W: Light-emitting diode, 13: Driving circuit section, 14: Driving circuit section, 15: Circuit section, 16: Control circuit section, 17: Pixel array, 21: Light, 22: Light, 23a: Light, 23b: Reflected light, 41: Transistor, 42: Transistor, 50A: Display device, 51: LED chip, 60: Object, 71: Substrate, 71B: Single-crystal silicon substrate, 71G: Single-crystal silicon substrate, 71R: Single-crystal silicon substrate, 71S: Single crystal silicon substrate, 75: n-type semiconductor layer, 75a: n-type contact layer, 75b: n-type cladding layer, 77: light-emitting layer, 77a: barrier layer, 77b: well layer, 79: p-type semiconductor layer, 79a: p-type cladding layer, 79b: p-type contact layer, 81: semiconductor layer, 82: light-receiving region, 83: electrode, 85: electrode, 87: electrode, 89: insulating layer, 102: transistor, 102_k: transistor, 102_1: transistor, 102_2: transistor, 103: transistor, 104: transistor, 105: transistor, 108: capacitor, 110: light-receiving region 111: Pixel electrode, 112: Common layer, 113: Photoelectric conversion layer, 114: Common layer, 115: Common electrode, 121: Wiring, 122: Wiring, 123: Wiring, 126: Wiring, 127: Wiring, 127_k: Wiring, 127_1: Wiring, 127_2: Wiring, 128: Wiring, 131: Wiring, 132: Wiring, 133: Wiring, 142: Adhesive layer, 148: Light-shielding layer, 149: Filter, 151: Substrate, 152: Substrate, 180: Light-emitting region, 190: Light-emitting region, 191: Terminal electrode, 193: Light-emitting layer, 195: Protective layer, 200: Display panel, 200A: Display panel, 200B: Display panel 200C: Display panel, 201: Glass substrate, 202: Protective substrate, 202b: Color conversion layer, 202g: Color conversion layer, 202G: Color conversion layer, 202r: Color conversion layer, 202R: Color conversion layer, 203: Functional layer, 203a: Terminal electrode, 211: Silicon substrate, 212: Photodetector, 212_k: Photodetector, 212_1: Photodetector, 212_2: Photodetector, 214: Insulating layer, 220: Finger, 231: Drive circuit section, 232: Drive circuit section, 236: Wiring, 237: Wiring, 251: Transistor, 352: Wiring, 401: Substrate, 410: Transistor, 410a: Transistor,411: Semiconductor layer, 411i: Channel formation region, 411n: Low resistance region, 412: Insulating layer, 413: Conductive layer, 414a: Conductive layer, 414b: Conductive layer, 415: Conductive layer, 416: Insulating layer, 421: Insulating layer, 422: Insulating layer, 423: Insulating layer, 426: Insulating layer, 427: Conductive layer, 431: Display pixel circuit, 433: Capacitive element, 434: Transistor, 435: Node, 436: Transistor, 437: Node, 438: Transistor, 450: Transistor, 450a: Transistor, 451: Semiconductor layer, 452: Insulating layer, 453: Conductive layer, 454a: Conductive layer 454b: Conductive layer, 455: Conductive layer, 535: Back gate, 545: Semiconductor layer, 546: Insulating layer, 701: Gate electrode, 702: Gate insulating film, 703: Source region, 704: Drain region, 705: Source electrode, 706: Drain electrode, 707: Oxide semiconductor layer, 774: Conductive layer, 791: Bump, 793: Bump, 797G: Color conversion layer, 797R: Color conversion layer, 901: Substrate, 902: Substrate, 903: Substrate, 904: Single crystal silicon wafer, 7000: Display unit, 7100: Television equipment, 7101: Housing, 7103: Stand, 7111: Remote 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 7550: Information terminal, 7551: Enclosure, 7552: Display unit, 7553: Camera, 7554: Speaker unit, 7555: Operation switch, 7557: Microphone, 7660: Information terminal, 7661: Enclosure, 7662: Display unit, 7 663: Band, 7664: Buckle, 7665: Operation switch, 7666: Input / output terminal, 7667: Icon, 8000: Camera, 8001: Housing, 8002: Display unit, 8003: Operation button, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Housing, 8102: Display unit, 8103: Button, 8200: Head-mounted display, 8201: Mounting part, 8202: Lens, 8203: Main unit, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head-mounted display, 8301: Housing,8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head-mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning material, 8404: Display unit, 8405: Lens,

Claims

1. A first semiconductor substrate has a plurality of first terminal electrodes and a plurality of second terminal electrodes, A light-emitting diode is placed on the first terminal electrode, The device comprises a photodetector having a photoelectric conversion layer on the second terminal electrode, The light-emitting diode has a first electrode and a second electrode, The first electrode overlaps the first terminal electrode, The first terminal electrode is electrically connected to the drive circuit of the light-emitting diode. The light-emitting diode drive circuit is formed on the first semiconductor substrate, The second terminal electrode is electrically connected to the drive circuit of the light-receiving element. The light-receiving element is a photodiode chip, The light-emitting diode is a light-emitting diode chip in which the first electrode or the second electrode is connected to the first terminal electrode. The second semiconductor substrate is bonded to the side of the first semiconductor substrate where terminal electrodes are not formed. The driving circuit for the light-receiving element is formed on the second semiconductor substrate. Semiconductor equipment.

2. The semiconductor device according to claim 1, wherein the first electrode is electrically connected to the first terminal electrode via a connecting layer.

3. A semiconductor device according to claim 1, wherein the first semiconductor substrate is a single-crystal silicon substrate.

4. A semiconductor device according to claim 1, further comprising a color conversion layer on the light-emitting diode, wherein the light emitted from the light-emitting diode passes through the color conversion layer.

5. A first light-emitting diode overlapping a first region of a first semiconductor substrate, A second light-emitting diode overlapping a second region of the first semiconductor substrate, The present invention comprises a third light-emitting diode that overlaps a third region of the first semiconductor substrate, The first semiconductor substrate has a fourth region adjacent to one or more of the first region, the second region, or the third region. The fourth region of the first semiconductor substrate has a photoelectric conversion layer and functions as a light-receiving element. The first light-emitting diode has a first electrode and a second electrode, The first region has a first terminal electrode, The first light-emitting diode is a light-emitting diode chip in which the first electrode or the second electrode is connected to the first terminal electrode. The drive circuit for the light-emitting diode chip is formed on the first semiconductor substrate. The second semiconductor substrate is bonded to the side of the first semiconductor substrate where the first terminal electrode is not formed. The driving circuit for the light-receiving element is formed on the second semiconductor substrate. Semiconductor equipment.

6. The semiconductor device according to claim 5, wherein the first semiconductor substrate is a single-crystal silicon substrate.

7. The semiconductor device according to claim 5, wherein the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode each have different light-emitting colors.

8. A semiconductor device according to claim 5, further comprising a color conversion layer on the second light-emitting diode, wherein the light emitted from the second light-emitting diode passes through the color conversion layer.

Images