Component using anodic oxide film and manufacturing method therefor
The method of atomic layer deposition on anodic oxide films addresses capacitance limitations by strategically forming electrode layers within pores, enhancing capacity and efficiency without etching or masking, thus improving multilayer ceramic capacitors.
Patent Information
- Application Number
- PCT/KR2025/006788
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-06-20
- Filing Date
- 2025-05-19
- Publication Date
- 2025-12-04
AI Technical Summary
Conventional multilayer ceramic capacitors using anodic oxide films face limitations in increasing capacitance due to the two-dimensional planar form of internal electrode layers, requiring additional etching processes or deposition masks to connect electrode layers, and are limited by installation positions when connecting on both surfaces.
A method involving atomic layer deposition to form first, second, and third layers on an anodic oxide film, utilizing some pores as electric energy storage space, without the need for etching or deposition masks, by strategically positioning these layers to overlap and cover each other partially within the pores.
Enhances capacitance by allowing efficient connection of electrode layers on the upper surface of the anodic oxide film, eliminating the need for additional processes, thus improving manufacturing efficiency and capacity.