Molybdenum-silicon target material and its combination manufacturing method

Abstract

A method for manufacturing a molybdenum-silicon target and a combination thereof, wherein the method for manufacturing a molybdenum-silicon target includes: providing molybdenum powder and silicon powder; mixing the molybdenum powder and the silicon powder using a mixing process to form a mixed powder; The mixed powder is made into a molybdenum-silicon target blank by using a cold pressing process; the molybdenum-silicon target blank is made into a molybdenum-silicon target material by a vacuum hot-pressing sintering process. 1. The molybdenum-silicon target manufacturing process of the present invention is a bold attempt, with fewer steps in the manufacturing process and high production speed. A molybdenum-silicon target with a density greater than or equal to 99% can be obtained by using the manufacturing method of the solution, and the obtained molybdenum-silicon target has a uniform microstructure and excellent sputtering performance. 2. The manufacturing method of the present invention can avoid the hot isostatic pressing process under high temperature and high pressure process conditions, saving production time, energy and cost.

Description

technical field

[0001] The invention relates to the technical field of sputtering targets, in particular to a molybdenum-silicon target and a method for manufacturing the combination thereof. Background technique

[0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved.

[0003] Molybdenum silicon target is a kind of target that is often used in vacuum sputtering process. Oxide gate formed by molybdenum-silicon target sputtering and polysilicon contact performance is stable, this silicide can wit...

Examples

Embodiment Construction

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] refer to figure 1 , figure 1 It is a flowchart of the method for manufacturing a molybdenum-silicon target in this embodiment, and the method for manufacturing a molybdenum-silicon target in this embodiment includes:

[0031] Execute step S1 to provide molybdenum powder and silicon powder;

[0032] Execute step S2, using a mixing process to mix molybdenum powder and silicon powder to form a mixed powder;

[0033] Execute step S3, using the cold pressing process to make the mixed powder into a molybdenum silicon target blank;

[0034] Step S4 is executed, and the molybdenum-silicon target blank is made into a molybdenum-silicon target by using a hot-press sintering process.

[0035] Compared with the prior art, the manufacturing ...

technical field

[0001] The invention relates to the technical field of sputtering targets, in particular to a molybdenum-silicon target and a method for manufacturing the combination thereof. Background technique

[0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved.

[0003] Molybdenum silicon target is a kind of target that is often used in vacuum sputtering process. Oxide gate formed by molybdenum-silicon target sputtering and polysilicon contact performance is stable, this silicide can wit...

Examples

Embodiment Construction

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] refer to figure 1 , figure 1 It is a flowchart of the method for manufacturing a molybdenum-silicon target in this embodiment, and the method for manufacturing a molybdenum-silicon target in this embodiment includes:

[0031] Execute step S1 to provide molybdenum powder and silicon powder;

[0032] Execute step S2, using a mixing process to mix molybdenum powder and silicon powder to form a mixed powder;

[0033] Execute step S3, using the cold pressing process to make the mixed powder into a molybdenum silicon target blank;

[0034] Step S4 is executed, and the molybdenum-silicon target blank is made into a molybdenum-silicon target by using a hot-press sintering process.

[0035] Compared with the prior art, the manufacturing ...

Images