Stacked flexible microelectronic system-in-package method and package structure

Abstract

The application provides a laminated flexible microelectronic system-level packaging method and packaging structure, and the method comprises the following steps: providing a first auxiliary support plate, and arranging functional components on the first auxiliary support plate; manufacturing a packaging layer on the functional components; providing a second auxiliary support plate, and fixing the second auxiliary support plate on the side of the packaging layer far from the first auxiliary support plate; removing the first auxiliary support plate to form a conversion device; fixing two conversion devices together, arranging the second auxiliary support plates in the two conversion devices to be opposite to each other, and connecting the functional components in the two conversion devices through a first connecting line; and removing the second auxiliary support plate. The laminated flexible microelectronic system-level packaging method can improve the reliability of electrical connection and mechanical connection of components in the current complex microelectronic system-level flexible packaging.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic packaging, in particular to a laminated flexible microelectronic system-in-package method and a laminated flexible microelectronic system-in-package structure manufactured by using the method. BACKGROUND

[0002] At present, the laminated microelectronic system-in-package process technology has the following problems: on the one hand, the device stacking in the system, the device unit interconnection process technology, and the stress of the packaging structure are too concentrated, which can easily cause damage to the components if applied to the flexible electronic product system-in-package manufacturing; the bridge island structure design (i.e. the component dispersion arrangement design) is used to disperse the system stress in the manufacturing of some flexible electronic products, and the interconnection structure of the device is changed when the deformation occurs, but there are still problems of poor mechanical strength and unreliable electrical performance, and new problems are introduced: first, the long interconnection path leads to the reduction of electrical performance (such as power consumption, signal transmission delay, etc.), among which the high-frequency high-speed signal performance is most affected, and in serious cases, the product design performance requirements cannot be met. At the same time, the area size of the packaging product is also increased.

[0003] On the other hand, the current high-density device, high-frequency high-speed signal system-in-package scheme has the following problems in the treatment scheme of EMI and electrostatic interference: the flexible reliability is poor, and there are problems of using more materials, high material cost, and high cost of related manufacturing process, which are not suitable for the system-in-package of flexible electronic products. In addition, most of the current flexible electronic system-in-package uses flexible materials such as silicone, PET, and PDMS, which is easy to produce static electricity, and there is no technical scheme that has flexible extensibility and solves the problem of flexible electronic EMI and static electricity from the system-in-package scheme level.

[0004] In summary, the current packaging manufacturing process technology cannot well solve the above problems in the complex flexible electronic system-in-package manufacturing, and is not suitable for manufacturing flexible electronic products. SUMMARY

[0005] Therefore, the present application provides a laminated flexible microelectronic system-in-package method and a laminated flexible microelectronic system-in-package structure manufactured by using the method, which can improve the reliability of the electrical connection and mechanical connection of components in the current complex microelectronic system-in-package flexible packaging.

[0006] The present application provides a laminated flexible microelectronic system-in-package method, which comprises the following steps:

[0007] A first auxiliary support plate is provided, and functional components are arranged on the first auxiliary support plate;

[0008] An encapsulation layer is fabricated on the functional component;

[0009] A second auxiliary support plate is provided, and the second auxiliary support plate is fixed to the side of the encapsulation layer away from the first auxiliary support plate;

[0010] Remove the first auxiliary support plate to form a transition device;

[0011] The two adapters are fixed together, the second auxiliary support plates in the two adapters are arranged back to back, and the functional components in the two adapters are connected by a first connecting line.

[0012] Remove the second auxiliary support plate.

[0013] Furthermore, after removing the first auxiliary support plate, the method further includes forming a first connecting line between each of the functional components to form a plurality of functional module regions within the encapsulation layer, and electrically connecting the plurality of functional module regions, wherein at least one of the functional components is provided in each functional module region, and the first connecting line is provided on the side of the functional module region away from the second auxiliary support plate.

[0014] Furthermore, after removing the first auxiliary support plate, the method further includes forming a buffer layer on the side of the encapsulation layer away from the second auxiliary support plate.

[0015] Furthermore, a multi-layered buffer layer is formed on the side of the encapsulation layer away from the second auxiliary support plate.

[0016] Furthermore, after the two adapters are fixed together, the elastic modulus of the buffer layer gradually decreases or gradually increases from one adapter to the other.

[0017] Furthermore, after the two adapters are fixed together, the elastic modulus of the buffer layer gradually increases or decreases from the middle layer of the buffer layer towards both sides of the encapsulation layer.

[0018] Furthermore, the method also includes: forming a first through hole in the buffer layer;

[0019] A first connection line is formed in the first through hole to bring out the electrodes of the functional components in the encapsulation layer;

[0020] The first through hole is filled to fix the first connecting line within the buffer layer.

[0021] Furthermore, after the two adapters are fixed together, the elastic modulus of the buffer layer gradually decreases or gradually increases from one adapter to the other.

[0022] Furthermore, the method also includes: forming a first through hole in the buffer layer;

[0023] A first connection line is formed in the first through hole to bring out the electrodes of the functional components in the encapsulation layer;

[0024] The first through hole is filled to fix the first connecting line within the buffer layer.

[0025] Furthermore, the method also includes: forming a first through hole in the buffer layer;

[0026] A connecting device is provided, the connecting device including a filling portion adapted to the shape of the first through hole, and a first connecting line is formed in the filling portion;

[0027] The connecting device is fixed in the first through hole of the buffer layer to bring out the electrodes of the functional components in the encapsulation layer.

[0028] Furthermore, after fabricating the encapsulation layer, the method further includes forming a first electrostatic protection layer on the side of the encapsulation layer away from the first auxiliary support plate;

[0029] After removing the first auxiliary support plate, the method further includes forming an insulating layer on the encapsulation layer and forming a second electrostatic protection layer on the insulating layer;

[0030] The second connecting line is connected between the first electrostatic protection layer and the second electrostatic protection layer. The first electrostatic protection layer, the second electrostatic protection layer, and the second connecting line together form an electrostatic protection structure covering the functional module area.

[0031] Furthermore, after forming the encapsulation layer, the method further includes forming a microporous structure around the functional module region within the encapsulation layer along the thickness direction of the encapsulation layer.

[0032] Furthermore, the method also includes forming a protective layer outside the stacked encapsulation layers.

[0033] The present invention also provides a stacked flexible microelectronic system-level packaging structure, including stacked packaging layers, each packaging layer having a functional module region, each functional module region having at least one functional component, a buffer layer being provided between two adjacent packaging layers, and a first connecting line passing through the buffer layer and connecting the two functional module regions.

[0034] Furthermore, the buffer layer has a multi-layer structure, with multiple buffer layers stacked on top of each other, and the elastic modulus of the buffer layer decreasing or increasing layer by layer from one encapsulation layer to another.

[0035] Furthermore, the buffer layer has a multi-layer structure, with multiple buffer layers stacked on top of each other. From the middle layer to the two side layers of the buffer layer, the elastic modulus of the buffer layer decreases or increases layer by layer.

[0036] Furthermore, the functional module area is also surrounded by an electrostatic protection structure, which includes a first electrostatic protection layer, a second electrostatic protection layer, and a second connecting line. The first electrostatic protection layer and the second electrostatic protection layer are respectively disposed on the upper and lower parts of the functional module area, and the second connecting line passes through the functional module area and connects between the first electrostatic protection layer and the second electrostatic protection layer.

[0037] Furthermore, the buffer layer includes a first buffer layer and a second buffer layer, and the second electrostatic discharge protection layer is formed between the first buffer layer and the second buffer layer. Two adjacent encapsulation layers share one second electrostatic discharge protection layer.

[0038] Furthermore, both the first electrostatic protective layer and the second electrostatic protective layer are composed of multiple conductive lines, which extend in a tortuous manner.

[0039] Furthermore, all of the aforementioned leads extend parallel to each other.

[0040] Furthermore, both the first electrostatic discharge (ESD) shielding layer and the second ESD shielding layer include conductive lines extending in different directions. The conductive lines extending in different directions intersect to form a grid-like first ESD shielding layer and the second ESD shielding layer. The first connecting line passes through the grid-like second ESD shielding layer and electrically connects the functional components in the adjacent two encapsulation layers.

[0041] Furthermore, an electrostatic dissipation resistor is also connected to the conductive line.

[0042] Furthermore, within different functional module regions, the grid density of the first electrostatic discharge (ESD) shield and the second ESD shield are positively correlated with the signal frequency of the functional components.

[0043] Furthermore, the packaging structure also includes an electrostatic dissipation layer, which is connected to the first electrostatic protection layer and / or the second electrostatic protection layer.

[0044] Furthermore, the electrostatic dissipation layer is located between the two functional module regions.

[0045] Furthermore, the electrostatic dissipation layer is disposed within the gap between the conductive lines of the first electrostatic protection layer and / or the second electrostatic protection layer.

[0046] Furthermore, a microporous structure for absorbing stress is also formed within the encapsulation layer along its thickness direction.

[0047] Furthermore, a microporous structure for absorbing stress is disposed around the functional components.

[0048] In summary, this invention, by surrounding the components with an electrostatic discharge (ESD) shield, connects the ESD shield to the ground wire, effectively addressing product safety hazards caused by ESD. The flexible buffer layer, flexible interconnect structure, and microporous structure of the multi-layer packaging functional structure, along with the packaging layer and flexible buffer layer surrounding the functional components, combined with one or more of these fabrication methods, effectively solve the reliability issues of electrical interconnects in multi-layer flexible packaging while ensuring a certain packaging density. This reduces the risks of unreliable system electrical performance, device packaging layer delamination, and even device damage caused by deformation and mechanical stress.

[0049] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0050] Figures 1 to 9 The diagram shows the structural schematic of each step of the stacked flexible microelectronic system-level packaging method provided in the first embodiment of the present invention.

[0051] Figure 10 The diagram shown is a structural schematic of the connecting device in the second embodiment of the present invention.

[0052] Figures 11 to 14 The diagram shows the structural schematics of each step in the stacked flexible microelectronic system-level packaging method provided in the third embodiment of the present invention.

[0053] Figure 15 The diagram shown is a top view of the electrostatic discharge (ESD) shielding layer in the stacked flexible microelectronic system-level packaging method provided in the fourth embodiment of the present invention.

[0054] Figure 16 The diagram shown is a top view of the electrostatic protection layer provided in the fifth embodiment of the present invention.

[0055] Figure 17 The diagram shown is a schematic diagram of the stacked flexible microelectronic system-level packaging structure in the stacked flexible microelectronic system-level packaging method provided in the sixth embodiment of the present invention. Detailed Implementation

[0056] To further illustrate the technical means and effects adopted by the present invention in order to achieve the intended purpose, the following detailed description is provided in conjunction with the accompanying drawings and preferred embodiments.

[0057] This invention provides a method for stacked flexible microelectronic system-level packaging and a stacked flexible microelectronic system-level packaging structure made using this method. This method can improve the reliability of electrical and mechanical connections of components in current complex flexible microelectronic system-level packaging.

[0058] Figures 1 to 9 The diagram shown is a structural schematic of each step of the stacked flexible microelectronic system-level packaging method provided in the first embodiment of the present invention, as follows: Figures 1 to 9 As shown, the stacked flexible microelectronic system-level packaging method provided by the present invention includes the following steps:

[0059] S1: The method includes providing a first auxiliary support plate 11, and arranging functional components 21 on the first auxiliary support plate 11 (see...). Figure 1 ).

[0060] The first auxiliary support plate 11 can be made of rigid materials such as silicon wafers, ceramics, glass, or steel sheets, or an auxiliary support plate made of rigid polymer materials, to provide temporary support for the flexible microelectronic system-in-package structure. The functional component 21 can be one or more of the following: capacitors, resistors, sensors, or IC chips.

[0061] To facilitate the placement of the functional component 21 on the first auxiliary support plate 11, the method further includes forming a first auxiliary adhesive layer 13 on either the first auxiliary support plate 11 or the functional component 21, wherein the functional component 21 is formed on the first auxiliary adhesive layer 13.

[0062] The first auxiliary adhesive layer 13 provides temporary adhesive force between the first auxiliary support plate 11 and the functional component 21. When modifying factors are applied to the first auxiliary adhesive layer 13, its adhesiveness will decrease, facilitating subsequent detachment between the first auxiliary support plate 11 and the functional component 21. The aforementioned modifying factors refer to factors that can alter the adhesiveness of the first auxiliary adhesive layer 13, such as specific temperatures or light of specific intensity and wavelength.

[0063] Based on the above effects, the first auxiliary adhesive layer 13 can be formed of a heat-sensitive adhesive, and the tackiness of the first auxiliary adhesive layer 13 decreases with increasing modification temperature. Understandably, the first auxiliary adhesive layer 13 can also be formed of a UV-sensitive adhesive, and the tackiness of the first auxiliary adhesive layer 13 decreases with modification by UV irradiation.

[0064] S2: A packaging layer 31 is fabricated on the functional component 21, and the packaging layer 31 encapsulates the functional component 21 (see...). Figure 2 ).

[0065] S3: Provide a second auxiliary support plate 12, and fix the second auxiliary support plate 12 to the side of the encapsulation layer 31 away from the first auxiliary support plate 11 (see...). Figure 3 ).

[0066] Similarly, in order to facilitate the bonding of the second auxiliary support plate 12 and the encapsulation layer 31, a second auxiliary adhesive layer 14 is formed on the second auxiliary support plate 12 and / or the encapsulation layer 31, and the second auxiliary support plate 12 and the encapsulation layer 31 are fixed together by the second auxiliary adhesive layer 14.

[0067] In this embodiment, the material properties and material selection range of the second auxiliary support plate 12 and the second auxiliary adhesive layer 14 are the same as those of the first auxiliary support plate 11 and the first auxiliary adhesive layer 13, and will not be described again here.

[0068] S4: Remove the first auxiliary support plate 11 to form the adapter 40 (see Figure 4 For ease of understanding, and Figure 3 compared to, Figure 4 The adapter 40 in the middle rotated 180°, that is, the second auxiliary support plate 12 is located below.

[0069] Specifically, in this embodiment, the adhesiveness of the first auxiliary adhesive layer 13 can be reduced by heating or ultraviolet irradiation, so as to separate the first auxiliary adhesive layer 13 from the first auxiliary support plate 11 and the encapsulation layer 31.

[0070] Furthermore, in this step, a first connecting line 22 can be formed between each functional component 21 to form multiple functional module regions 23 within the encapsulation layer 31, each having a specific function or implementing a specific electrical signal function. These multiple functional module regions 23 are electrically connected, with at least one functional component 21 disposed within each functional module region 23. The first connecting line 22 is located on the side of the functional module region 23 away from the second auxiliary support plate 12, i.e., the side where the original first auxiliary support plate 11 was located. Since the functional component 21 was directly or indirectly fixed to the first auxiliary support plate 11 via the first auxiliary adhesive layer 13 in the previous step, after removing the first auxiliary support plate 11 and the first auxiliary adhesive layer 13, the electrodes of the functional component 21 can be directly exposed on the surface of the encapsulation layer 31, and the first connecting line 22 can be directly formed on the surface of the encapsulation layer 31.

[0071] In this embodiment, the first connecting line 22 is made of conductive ink such as nano-Ag, nano-Cu or carbon nano, and is formed on the surface of the encapsulation layer 31 by printing, inkjet printing or other processes.

[0072] S5: Fix the encapsulation layers 31 in the two adapter devices 40 into one unit, so that the second auxiliary support plates 12 in the two adapter devices 40 are arranged opposite to each other, that is, the sides of the encapsulation layers 31 in the two adapter devices 40 that are away from the second auxiliary support plates 12 are fixed together in a opposite manner (e.g. Figure 5 And connect the functional components 21 in the functional module area 23 of the two adapters 40 through the first connecting line 22.

[0073] Furthermore, in order to make the combination of the encapsulation layers 31 in the two adapters 40 more secure, in this embodiment, a buffer layer 32 is laid on the side of the encapsulation layer 31 away from the second auxiliary support plate 12, and then the encapsulation layers 31 in the two adapters 40 are combined and fixed together.

[0074] Preferably, the number of buffer layers 32 is not less than two, such as a first buffer layer 321 and a second buffer layer 322, with each buffer layer 32 stacked. The elastic moduli of the multiple buffer layers 32 are different. When the two adapters 40 are fixed together, the elastic modulus of the buffer layers 32 decreases or increases layer by layer from one adapter 40 to the other, so as to better buffer the stress of the encapsulation structure when bending. In another embodiment of the present invention, the elastic modulus of the buffer layer 32 may also change in the following manner: from the middle layer of the buffer layer 32 to both sides of the buffer layer 32, that is, from the middle of 32 to the direction where the adapter 40 is located, the elastic modulus of the buffer layer 32 gradually increases or decreases.

[0075] In this embodiment, the buffer layer 32 is formed on the encapsulation functional structure 31 of one adapter 40, and then the encapsulation functional structure 31 of another adapter 40 is fixed on the buffer layer 32, thereby fixing the encapsulation functional structures 31 of the two adapters 40 together.

[0076] Understandably, in other embodiments, the buffer layer 32 may also be formed on the encapsulation functional structure 31 of each adapter 40, and then the buffer layers 32 of the two adapters 40 are fixed to each other, thereby fixing the encapsulation functional structures 31 of the two adapters 40 together.

[0077] In this embodiment, the buffer layer 32 and the encapsulation functional structure 31 or the buffer layer 32 and the buffer layer 32 can be fixed together by heating, thereby achieving mutual fixation of the encapsulation functional structures 31 in the two adapters 40.

[0078] Furthermore, in order to achieve electrical interconnection between the functional module regions 23 within the two combined packaged functional structures 31, in this embodiment, when forming the buffer layer 32, a first through-hole 33 needs to be provided on the buffer layer 32 at a location corresponding to the functional component 21 (see...). Figure 5 The first connecting line 22 is formed in the through hole to bring out the electrode of the functional component 21 in the encapsulation layer 31. Finally, the first through hole 33 is filled to fix the first connecting line 22 in the buffer layer 32.

[0079] S6: Remove the second auxiliary support plate 12.

[0080] In this step, the adhesiveness of the second auxiliary adhesive layer 14 can also be reduced by heating or ultraviolet irradiation, so as to separate the second auxiliary adhesive layer 14 and the second auxiliary support plate 12 from the encapsulation layer 31.

[0081] S7: A protective layer 34 is formed outside the stacked packaging layer 31 to protect the entire stacked flexible microelectronic system-level packaging structure.

[0082] The protective layer 34 can be a flexible polymer or a composite membrane microporous breathable material.

[0083] In this embodiment, by providing a first auxiliary support plate 11 and a second auxiliary support plate 12, damage to the functional component 21 during manufacturing can be prevented. Furthermore, by fixing the two adapters 40 together to form a stacked architecture of the functional module region 23, excessive stress concentration in the stacked flexible microelectronic system-on-package structure can be prevented. Furthermore, the buffer layer 32 absorbs stress during manufacturing and stress during bending of the package structure, further reducing stress concentration within the package structure, while ensuring reliable physical and electrical connections and reducing the length of the first connecting line 22.

[0084] In this embodiment, the stacked flexible microelectronic system-in-package structure has a two-layer functional module area 23 architecture. In other embodiments, if the stacked flexible microelectronic system-in-package structure has a two-layer or more functional module area 23 architecture, in step S8, the second auxiliary support plate on one side can be removed, and then the third adapter can be fixed together to complete the assembly.

[0085] Figure 10 The diagram shown is a schematic diagram of the connecting device in the second embodiment of the present invention. The fabrication method of the stacked flexible microelectronic system-level flexible package provided in the second embodiment of the present invention is basically the same as that in the first embodiment. The difference is that in this embodiment, after the first through hole 33 is formed on the buffer layer 32, the method includes providing a connecting device 35. The connecting device 35 includes a filling portion 351 adapted to the shape of the first through hole 33, and a first connecting line 22 formed in the filling portion 351.

[0086] The connector 35 is placed into the first through hole 33 of the buffer layer 32, and the electrodes of the functional components 21 in the encapsulation layer 31 are brought out so that the first connecting line 22 can be electrically connected to the functional module areas 23 in the two encapsulation layers 31.

[0087] That is, in this embodiment, it is not necessary to first set the first connecting line 22 in the first through hole 33 and then fill the first through hole 33. The connecting device 35 can be directly placed in the first through hole 33, which simplifies the manufacturing process.

[0088] Figures 11 to 14 The diagram shown is a structural schematic of each step of the stacked flexible microelectronic system-level packaging method provided in the third embodiment of the present invention, as follows: Figures 11 to 14 As shown, the packaging method provided in the third embodiment of the present invention is basically the same as the packaging method in the first embodiment, except that an electrostatic protection structure covering the functional module area 23 is formed around the functional component 21. The specific method is as follows:

[0089] In step S2, after fabricating the encapsulation layer 31, a first electrostatic discharge (ESD) protection layer 361 is formed on the side of the encapsulation layer 31 away from the first auxiliary support plate 11 (see...). Figure 11 );

[0090] After step S4, i.e., the step of removing the first auxiliary support plate 11, the method further includes forming an insulating layer on the encapsulation layer 31, and forming a second electrostatic discharge protection layer 362 on the insulating layer (see...). Figure 12 For easier observation, Figure 12 and Figure 11 Compared to that, it was rotated 180°.

[0091] And a second connecting line 363 (see) forms through the encapsulation layer 31 and connects between the first electrostatic discharge (ESD) protection layer 361 and the second ESD protection layer 362. Figure 13 ).

[0092] By combining the first electrostatic discharge (ESD) shielding layer 361, the second ESD shielding layer 362, and the second connecting line 363, the ESD shielding layers located on both sides of the encapsulation layer 31 can be joined together to form a three-dimensional ESD shielding structure, thereby releasing static electricity and preventing ESD interference. This effectively solves the product safety performance hazards caused by ESD and / or electromagnetic interference from ESD discharge. The surface resistance of the first ESD shielding layer 361 and the second ESD shielding layer 362 is 10 Ω·cm. 6 Ω / m 2 Up to 10 11 Ω / m 2 (or volume resistivity of 10) 5 Ω*cm to 10 10 Ω*cm).

[0093] In this embodiment, the insulating layer can be replaced by the buffer layer 32, that is, there is no need to set an additional insulating layer, and the second electrostatic protection layer 362 is formed on the buffer layer 32.

[0094] In this embodiment, the buffer layer 32 includes a first buffer layer 321 and a second buffer layer 322, and a second electrostatic discharge protection layer 362 is disposed between the first buffer layer 321 and the second buffer layer 322. Two adjacent encapsulation layers 31 share one second electrostatic discharge protection layer 362.

[0095] Furthermore, when manufacturing the electrostatic protection structure, a second through hole 364 penetrating the upper and lower surfaces of the encapsulation layer 31 needs to be provided on the encapsulation layer 31. Then, a second connecting line 363 is formed in the second through hole 364, which can connect the first electrostatic protection layer 361 and the second electrostatic protection layer 362 to form a three-dimensional electrostatic protection structure.

[0096] To better protect against electrostatic discharge (ESD) and prevent potential hazards caused by ESD, such as... Figure 15As shown, in this embodiment, the first electrostatic discharge (ESD) shielding layer 361 and the second ESD shielding layer 362 are composed of multiple conductive lines 365, which can extend in a tortuous manner. When the packaging structure is bent, the conductive lines 365 can be stretched to prevent interference caused by the conductive lines 365 when the packaging structure is bent, and to prevent the conductive lines 365 from being pulled apart.

[0097] Specifically, the zigzag-shaped lead wire 365 can extend in shapes such as wavy, sawtooth, square, or sine waves.

[0098] Furthermore, both the first electrostatic discharge (ESD) shielding layer 361 and the second ESD shielding layer 362 are mesh-like. Each includes conductive lines 365 extending in different directions, which intersect to form the mesh-like first ESD shielding layer 361 and the second ESD shielding layer 362. The conductive lines 365 are connected to the second connecting lines 363. The first connecting line 22 passes through the mesh of the mesh-like second ESD shielding layer 362 to electrically connect the functional components 21 within two adjacent encapsulation layers 31. Similarly, the conductive lines 365 within the first ESD shielding layer 361 and the second ESD shielding layer 362 extend parallel to each other.

[0099] In this embodiment, each functional module region 23 is surrounded by an electrostatic discharge (ESD) protection structure. Within different functional module regions 23, the grid density of the first ESD protection layer 361 and the second ESD protection layer 362 is positively correlated with the signal frequency of the functional component 21; that is, the higher the signal frequency of the functional component 21, the higher the grid density. Here, the signal frequency of the functional module region 23 refers to the signal radiation generated by the module at a certain frequency that may interfere with the signals of other sensitive modules in the surrounding area, or a signal that is sensitive to a certain frequency. For example... Figure 15 As shown, Figure 15 The left side region houses low-frequency signal functional components 21, such as the front-end of the sensor module. Therefore, the grid density of the electrostatic discharge protection layer in this region is relatively small. Figure 15 The right side area is equipped with functional components 21 for connecting with high-frequency signals such as Bluetooth and WIFI, and the grid density of the electrostatic protection layer in this area is also relatively large.

[0100] In this embodiment, the thickness of the first electrostatic protective layer 361 and the second electrostatic protective layer 362 is 3-38 μm, preferably 4-12 μm; the line width is 25-500 μm, preferably 38-150 μm. The network spacing is 0.1-3 mm, and the material of the conductive wire 365 is conductive materials such as graphene, carbon nanotubes, nano-silver, nano-copper, and gold.

[0101] An electrostatic dissipation resistor 366 may also be provided on the lead wire 365 to dissipate the static electricity in the first electrostatic protection layer 361 and the second electrostatic protection layer 362.

[0102] In order to conduct static electricity inside the electrostatic shield into the ground wire, a zero-ohm resistor (not shown) is also installed between the electrostatic shield and the ground wire.

[0103] To further enhance electrostatic protection and prevent potential hazards from ESD and electromagnetic interference, the method also includes forming an electrostatic dissipation layer 367 on the encapsulation layer 31, which is connected to the electrostatic protection structure of the functional module region 23.

[0104] like Figure 15 As shown, in this embodiment, the electrostatic dissipation layer 367 is located on the buffer layer 32 and between the two functional module regions 23. That is, it is connected to the first electrostatic protection layer 361 within the two functional module regions 23. It can be understood that it can also be disposed on the lower surface of the encapsulation layer 31 and located between the two functional module regions 23. That is, it is connected to the second electrostatic protection layer 362 within the two functional module regions 23.

[0105] When fabricating the electrostatic protection structure, physical vapor deposition (PVD) (such as sputtering, vacuum evaporation, etc.) is used, or simple and low-cost processes such as spraying, printing or inkjet printing are used to form a network structure on the surface of the encapsulation layer 31 using conductive ink materials such as carbon nanotubes, nano-silver, nano-copper, gold, etc., and then cured by VU curing or heating sintering to form the first electrostatic protection layer 361 or the second electrostatic protection layer 362.

[0106] A second through hole 364 is formed on the encapsulation layer 31 by means of laser drilling, and then connecting wires are formed on the surface of the hole wall of the second through hole 364 by chemical plating, electroplating and other processes, so as to finally achieve the formation of a three-dimensional mesh electrostatic protection structure.

[0107] The electrostatic dissipation layer 367 and the electrostatic dissipation resistor 366 are fabricated using low-temperature processes such as plasma-enhanced chemical vapor deposition (PECVD), spraying, printing, or inkjet printing.

[0108] Figure 16 The diagram shown is a top view of the electrostatic protective layer provided in the fifth embodiment of the present invention. Figure 16As shown, the flexible electronic packaging device provided in the second embodiment of the present invention is basically the same as that in the first embodiment, except that in this embodiment, the electrostatic dissipation layer 367 is disposed in the gap between the conductive lines 365 of the first electrostatic protection layer 361 and the second electrostatic protection layer 362.

[0109] Figure 17 The diagram shown is a schematic representation of the stacked flexible microelectronic system-in-package structure in the stacked flexible microelectronic system-in-package method provided in the sixth embodiment of the present invention. Figure 17 As shown, in this embodiment, after forming the encapsulation layer 31, the method further includes forming a layer within the encapsulation layer 31 along the thickness direction of the encapsulation layer 31 (i.e., ...). Figure 17 Micropore structures 368 are formed in the vertical direction of the package. The micropore structures 368 penetrate one or more of the encapsulation layer 31 and buffer layer 32, and are disposed around the functional component 21. They have a specific shape and micropore density related to the material and shape. The shape of the micropore structures 368 can be cylindrical, polygonal, or other prisms. The pore size of the micropore structures 368 is 20-800 μm, preferably 50-300 μm. The micropore structures 368 can absorb deformation stress when the stacked flexible microelectronic system-in-package structure is bent, and slowly release the absorbed stress when the stacked flexible microelectronic system-in-package structure returns to its original shape. This improves the bending performance of the stacked flexible microelectronic system-in-package structure.

[0110] In this embodiment, by providing the first auxiliary support plate 11 and the second auxiliary support plate 12, damage to the functional component 21 during the manufacturing process can be prevented. Furthermore, by fixing the two adapters 40 together to form a stacked architecture of the functional component 21, excessive stress concentration in the stacked flexible microelectronic system-in-package structure can be prevented. Furthermore, the buffer layer 32 absorbs stress during manufacturing and stress during bending of the package structure, further reducing stress concentration within the package structure while ensuring reliable physical and electrical connections and reducing the length of the first connecting line 22. Furthermore, the electrostatic discharge (ESD) protection structure releases static electricity, preventing ESD interference. This effectively addresses product safety hazards caused by ESD and electromagnetic interference. Furthermore, the microporous structure 368 absorbs bending stress and slowly releases the absorbed stress, improving the bending performance of the package structure. The flexible buffer layer 32 and flexible interconnect structure of the multi-layer packaging functional structure, along with the microporous structure of the packaging layer 31 and flexible buffer layer 32 surrounding the functional component 21, can be combined with one or more of these fabrication schemes. This structure effectively solves the reliability problem of electrical interconnection in multi-layer flexible packaging while ensuring a certain packaging density. It reduces the risks of unreliable system electrical performance, delamination of the device packaging layer 31, and even device damage caused by deformation and mechanical stress.

[0111] The present invention also provides a stacked flexible microelectronic system-level packaging structure. The system and packaging structure include stacked packaging layers 31, each packaging layer 31 having a functional module region 23, each functional module region 23 having at least one functional component 21, a buffer layer 32 being provided between two adjacent packaging layers 31, and a first connecting line 22 passing through the buffer layer 32 and connecting the functional modules 23 in the two packaging layers 31.

[0112] Furthermore, the buffer layer 32 has a multi-layer structure, with multiple buffer layers 32 stacked on top of each other. The elastic modulus of the multiple buffer layers 32 is different. From one encapsulation layer 31 to another encapsulation layer 31, the elastic modulus of the buffer layer 32 decreases or increases layer by layer.

[0113] In another embodiment of the present invention, from the middle of the buffer layer 32 to both sides of the buffer layer 32, that is, to the direction where the two connecting devices 40 are located, the elastic modulus of the buffer layer 32 decreases or increases layer by layer.

[0114] Furthermore, an electrostatic discharge (ESD) protection structure is provided around the functional module area 23. This ESD protection structure includes a first ESD protection layer 361, a second ESD protection layer 362, and a second connecting line 363. The first ESD protection layer 361 and the second ESD protection layer 362 are respectively disposed on the upper and lower parts of the functional module area 23. The second connecting line 363 passes through the encapsulation layer 31 and connects between the first ESD protection layer 361 and the second ESD protection layer 362.

[0115] Furthermore, the buffer layer 32 includes a first buffer layer 321 and a second buffer layer 322. The first electrostatic discharge protection layer 361 is formed on the side of the encapsulation layer 31 away from the buffer layer 32, and the second electrostatic discharge protection layer 362 is formed between the first buffer layer 321 and the second buffer layer 322. Two adjacent encapsulation layers 31 share one second electrostatic discharge protection layer 362.

[0116] Furthermore, the first electrostatic protection layer 361 and the second electrostatic protection layer 362 are composed of multiple conductive lines 365, which can extend in a tortuous manner. The tortuous conductive lines 365 can extend in shapes such as wavy, sawtooth, square, or sine waves.

[0117] Both the first electrostatic discharge (ESD) shielding layer 361 and the second ESD shielding layer 362 are mesh-like. Each includes conductive lines 365 extending in different directions, which intersect to form the mesh-like first ESD shielding layer 361 and the second ESD shielding layer 362. The conductive lines 365 are connected to a second connecting line 363. A first connecting line 22 passes through the mesh of the mesh-like second ESD shielding layer 362 to electrically connect the functional components 21 within two adjacent encapsulation layers 31. In another embodiment of the invention, the conductive lines 365 within the first ESD shielding layer 361 and the second ESD shielding layer 362 extend parallel to each other.

[0118] An electrostatic dissipation resistor 366 may also be provided on the lead wire 365 to dissipate static electricity within the first electrostatic protection layer 361 and the second electrostatic protection layer 362. An electrostatic dissipation layer 367 is also formed on the encapsulation layer 31, and the electrostatic dissipation layer 367 is connected to the first electrostatic protection layer 361 and / or the second electrostatic protection layer 362.

[0119] Furthermore, the electrostatic dissipation layer 367 is located between the two functional module regions 23 and is simultaneously connected to two electrostatic protection structures. Within different functional module regions 23, the grid density of the first electrostatic protection layer 361 and the second electrostatic protection layer 362 is positively correlated with the signal frequency of the functional components.

[0120] In another embodiment of the present invention, the electrostatic dissipation layer 367 is disposed within the gap of the respective conductors 365 of the first electrostatic protection layer 361 and / or the second electrostatic protection layer 362.

[0121] Furthermore, a stress-absorbing microporous structure 368 is formed within the encapsulation layer 31 along the thickness direction of the encapsulation layer 31, and this microporous structure is disposed around the functional component 21.

[0122] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A method for stacked flexible microelectronic system-level packaging, characterized in that: The method includes the following steps: Provide a first auxiliary support plate, and arrange functional components on the first auxiliary support plate; An encapsulation layer is fabricated on the functional component; A second auxiliary support plate is provided, and the second auxiliary support plate is fixed to the side of the encapsulation layer away from the first auxiliary support plate; Remove the first auxiliary support plate to form a transition device; After removing the first auxiliary support plate, the method further includes forming a buffer layer on the side of the encapsulation layer away from the second auxiliary support plate; forming a first through hole in the buffer layer; forming a first connecting line in the first through hole to lead out the electrode of the functional component in the encapsulation layer; and filling the first through hole to fix the first connecting line in the buffer layer. The two adapters are fixed together, the second auxiliary support plates in the two adapters are arranged back to back, and the functional components in the two adapters are connected by a first connecting line. Remove the second auxiliary support plate.

2. The stacked flexible microelectronic system-level packaging method as described in claim 1, characterized in that: After removing the first auxiliary support plate, the method further includes forming a first connecting line between each of the functional components to form a plurality of functional module regions within the encapsulation layer, and electrically connecting the plurality of functional module regions, wherein at least one of the functional components is provided in each functional module region, and the first connecting line is provided on the side of the functional module region away from the second auxiliary support plate.

3. The stacked flexible microelectronic system-level packaging method as described in claim 2, characterized in that: A multi-layered buffer layer is formed on the side of the encapsulation layer away from the second auxiliary support plate.

4. The stacked flexible microelectronic system-level packaging method as described in claim 3, characterized in that: After the two adapters are fixed together, the elastic modulus of the buffer layer gradually decreases or gradually increases from one adapter to the other.

5. The stacked flexible microelectronic system-level packaging method as described in claim 3, characterized in that: After the two adapters are fixed together, the elastic modulus of the buffer layer gradually increases or decreases from the middle layer of the buffer layer to both sides of the encapsulation layer.

6. The stacked flexible microelectronic system-level packaging method as described in claim 2, characterized in that: The method further includes: forming a first through-hole in the buffer layer; A connecting device is provided, the connecting device including a filling portion adapted to the shape of the first through hole, and a first connecting line is formed in the filling portion; The connecting device is fixed in the first through hole of the buffer layer to bring out the electrodes of the functional components in the encapsulation layer.

7. The stacked flexible microelectronic system-level packaging method as described in claim 2, characterized in that: After fabricating the encapsulation layer, the method further includes forming a first electrostatic protection layer on the side of the encapsulation layer away from the first auxiliary support plate; After removing the first auxiliary support plate, the method further includes forming an insulating layer on the encapsulation layer and forming a second electrostatic protection layer on the insulating layer; The second connecting line is connected between the first electrostatic protection layer and the second electrostatic protection layer. The first electrostatic protection layer, the second electrostatic protection layer, and the second connecting line together form an electrostatic protection structure covering the functional module area.

8. The stacked flexible microelectronic system-level packaging method as described in claim 7, characterized in that: After forming the encapsulation layer, the method further includes forming a microporous structure around the functional module region within the encapsulation layer along the thickness direction of the encapsulation layer.

9. The stacked flexible microelectronic system-level packaging method as described in claim 1, characterized in that: The method also includes forming a protective layer outside the stacked encapsulation layers.

10. A layered flexible microelectronic system-level packaging structure, characterized in that: The stacked flexible microelectronic system-level packaging structure is prepared by any one of claims 1 to 9. The stacked microelectronic system-level packaging structure includes stacked packaging layers, each of the packaging layers has a functional module region, each functional module region has at least one functional component, a buffer layer is provided between two adjacent packaging layers, and a first connecting line passes through the buffer layer and connects the two functional module regions.

11. The stacked flexible microelectronic system-in-package structure as described in claim 10, characterized in that: The buffer layer has a multi-layer structure, with multiple buffer layers stacked on top of each other. From one encapsulation layer to another, the elastic modulus of the buffer layer decreases or increases layer by layer.

12. The stacked flexible microelectronic system-in-package structure as described in claim 10, characterized in that: The buffer layer has a multi-layer structure, with multiple buffer layers stacked on top of each other. From the middle layer to the two side layers of the buffer layer, the elastic modulus of the buffer layer decreases or increases layer by layer.

13. The stacked flexible microelectronic system-in-package structure as described in claim 10, characterized in that: The functional module area is also surrounded by an electrostatic protection structure, which includes a first electrostatic protection layer, a second electrostatic protection layer, and a second connecting line. The first electrostatic protection layer and the second electrostatic protection layer are respectively disposed on the upper and lower parts of the functional module area. The second connecting line passes through the functional module area and connects between the first electrostatic protection layer and the second electrostatic protection layer.

14. The stacked flexible microelectronic system-in-package structure as described in claim 13, characterized in that: The buffer layer includes a first buffer layer and a second buffer layer, and the second electrostatic discharge protection layer is formed between the first buffer layer and the second buffer layer. Two adjacent encapsulation layers share one second electrostatic discharge protection layer.

15. The stacked flexible microelectronic system-in-package structure as described in claim 13, characterized in that: Both the first electrostatic protection layer and the second electrostatic protection layer are composed of multiple conductive lines, which extend in a tortuous manner.

16. The stacked flexible microelectronic system-in-package structure as described in claim 15, characterized in that: All of the aforementioned leads extend parallel to each other.

17. The stacked flexible microelectronic system-in-package structure as described in claim 16, characterized in that: Both the first electrostatic discharge (ESD) shielding layer and the second ESD shielding layer include conductive lines extending in different directions. The conductive lines extending in different directions intersect to form a grid-like first ESD shielding layer and the second ESD shielding layer. The first connecting line passes through the grid-like second ESD shielding layer and electrically connects the functional components in the adjacent two encapsulation layers.

18. The stacked flexible microelectronic system-in-package structure as described in claim 16 or 17, characterized in that: An electrostatic dissipation resistor is also connected to the lead wire.

19. The stacked flexible microelectronic system-in-package structure as described in claim 17, characterized in that: Within different functional module regions, the grid density of the first electrostatic discharge (ESD) shield and the second ESD shield are positively correlated with the signal frequency of the functional components.

20. The stacked flexible microelectronic system-in-package structure as described in claim 16 or 17, characterized in that: The encapsulation structure further includes an electrostatic dissipation layer, which is connected to the first electrostatic protection layer and / or the second electrostatic protection layer.

21. The stacked flexible microelectronic system-in-package structure as described in claim 20, characterized in that: The electrostatic dissipation layer is located between the two functional module regions.

22. The stacked flexible microelectronic system-in-package structure as described in claim 20, characterized in that: The electrostatic dissipation layer is disposed within the gap between the conductors of the first electrostatic protection layer and / or the second electrostatic protection layer.

23. The stacked flexible microelectronic system-in-package structure as described in claim 12, characterized in that: The encapsulation layer also has a microporous structure that absorbs stress along its thickness direction.

24. The stacked flexible microelectronic system-in-package structure as described in claim 23, characterized in that: Stress-absorbing microporous structures are set around the functional components.

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