Photoresist resin composition, film, color conversion element, and electronic device

Abstract

Provided are a photoresist resin composition, a film, a color conversion element, and an electronic device. The photoresist resin composition comprises: a plurality of quantum dots; a photopolymerizable monomer; a photopolymerization initiator; a scatterer; a binder resin; and a solvent, wherein the amount of the scatterer is in a range of about 2 parts by weight to about 20 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0008410, filed on January 23, 2018, which is hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0003] Exemplary embodiments of the present invention generally relate to a photoresist resin composition, a film prepared therefrom, a color conversion element including the film, and an electronic device including the color conversion element. Background Art

[0004] Liquid crystal display (LCD) devices are currently widely used flat panel display devices. An LCD device includes electric field generating electrodes (e.g., pixel electrodes and common electrodes) disposed on a pair of display panels with a liquid crystal layer interposed therebetween. The LCD device generates an electric field in the liquid crystal layer by applying a voltage to the electric field generating electrodes, aligning the orientation of liquid crystal molecules in the liquid crystal layer and thereby controlling the polarization of incident light, thereby displaying an image.

[0005] The LCD device includes a color conversion element that realizes color, but the light emitting efficiency of the color conversion element is low because the intensity of light emitted from a backlight source is reduced by about 1 / 3 while passing through a red filter, a green filter, and a blue filter.

[0006] Therefore, in order to prevent the decrease in luminous efficiency and improve color reproducibility, a photoluminescent liquid crystal display (PL-LCD) device has been developed in which a quantum dot color conversion layer (QD-CCL) replaces a color conversion element in a conventional LCD device. The PL-LCD device displays a color image by using visible light generated by a light source that generates light of a lower wavelength such as ultraviolet light or blue light, which is modulated by a liquid crystal layer and applied to a color conversion layer (CCL).

[0007] The above information disclosed in this Background section is only for understanding the background of the inventive concept and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0008] One or more exemplary embodiments include a color conversion element having improved color reproducibility and light emitting efficiency and an electronic device including the color conversion element.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented exemplary embodiments.

[0010] According to one or more exemplary embodiments, a photoresist resin composition is provided, including: a plurality of quantum dots; a photopolymerizable monomer; a photopolymerization initiator; a scatterer; a binder resin; and a solvent, wherein an amount of the scatterer is in a range of about 2 parts by weight to about 20 parts by weight based on 100 parts by weight of the photoresist resin composition.

[0011] According to one or more exemplary embodiments, provided is a film prepared by using the photoresist resin composition.

[0012] According to one or more exemplary embodiments, there is provided a color conversion element including the film.

[0013] According to one or more exemplary embodiments, there is provided an electronic device including the color conversion element and a display device.

[0014] Other features of the inventive concept will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practicing the inventive concept.

[0015] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the inventive concept.

[0017] Figure 1 is a schematic diagram of the structure of a color conversion element according to an exemplary embodiment.

[0018] Figure 2 is a schematic diagram of a structure of a color conversion element according to another exemplary embodiment.

[0019] Figure 3 is a schematic diagram of an electronic device according to an exemplary embodiment.

[0020] Figure 4 is a schematic diagram of an electronic device according to another exemplary embodiment.

[0021] Figure 5 is a schematic diagram of an electronic device according to another exemplary embodiment.

[0022] Figure 6 is a graph showing the light absorption rate of the quantum dots according to Examples 1 to 9.

[0023] Figure 7This is a graph showing the dependency of the refractive index of a quantum dot photoresist film formed using a photoresist resin composition on the photon conversion efficiency of the quantum dot photoresist film.

[0024] Figure 8 is a graph showing the change in refractive index depending on the amount of a high refractive material (refractive index = 2.8) in a photoresist resin composition. DETAILED DESCRIPTION

[0025] In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of various exemplary embodiments of the present invention. However, it is apparent that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other cases, known structures and devices are shown in block diagram form to avoid unnecessary obscurity of various exemplary embodiments. In addition, various exemplary embodiments may be different, but not necessarily exclusive. For example, without departing from the concept of the present invention, specific shapes, configurations, and characteristics of exemplary embodiments may be used or implemented in another exemplary embodiment.

[0026] Unless otherwise specified, the exemplary embodiments shown should be understood as providing exemplary features of different details of some ways in which the inventive concept can be implemented in practice. Therefore, without departing from the inventive concept, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter individually or collectively referred to as "elements") of various embodiments may be further combined, separated, interchanged and / or rearranged.

[0027] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify the boundaries between adjacent elements. Therefore, the presence or absence of cross-hatching or shading will not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements, unless otherwise stated. In addition, in the accompanying drawings, the size and relative size of the elements may be magnified for the purpose of clarity and / or description. When the exemplary embodiments can be implemented in different ways, the specific process sequence can be performed differently from the described order. For example, two consecutively described processes can be performed substantially simultaneously or in an order opposite to the described order. Moreover, the same reference numerals represent the same elements.

[0028] When an element such as a layer is referred to as "on another element or layer", "connected to" or "coupled to" another element or layer, it can be directly on another element or layer, directly connected to or coupled to another element or layer, or there can be an intermediate element or layer. However, when an element or layer is referred to as "directly on another element or layer", "directly connected to" or "directly coupled to" another element or layer, there is no intermediate element or layer. For this reason, the term "connection" can refer to physical, electrical and / or fluid connections, with or without intermediate elements. For the purpose of this disclosure, "at least one of X, Y and Z", "at least one selected from the group consisting of X, Y and Z" and "at least one element selected from the group consisting of X, Y and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y and Z, such as, for example, XYZ, XYY, YZ and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more related listed items.

[0029] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element.

[0030] Spatially relative terms, such as "under," "below," "below," "above," "above," "higher," "side" (e.g., as in "sidewall"), and the like, may be used herein for descriptive purposes and to describe the relationship of one element to another element shown in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the accompanying drawings. For example, if the device in the figure is flipped, elements described as being "below" or "beneath" other elements or features will be oriented "above" the other elements or features. Thus, the exemplary term "below" may encompass both orientations of above and below. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative descriptors used herein are interpreted accordingly.

[0031] The terms used herein are for the purpose of describing specific embodiments and are not intended to be restrictive. As used herein, the singular forms "a", "an" and "said" are also intended to include plural forms, unless the context clearly states otherwise. In addition, when used in this specification, the terms "comprises", "comprising", "includes" and / or "including" specify the presence of the features, integers, steps, operations, elements, components and / or their groups, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or their groups. It should also be noted that, as used herein, the terms "substantially", "about" and other similar terms are used as approximate terms rather than terms of degree, and are therefore used to illustrate the inherent deviations in the measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0032] Hereinafter, a photoresist resin composition according to an exemplary embodiment will be described.

[0033] Photoresist resin composition

[0034] A photoresist resin composition according to one exemplary embodiment may include a plurality of quantum dots, a photopolymerization monomer, a photopolymerization initiator, a scatterer, a binder resin, and a solvent.

[0035] The amount of the scatterer may be in the range of about 2 parts by weight to about 20 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition.

[0036] When the amount of the scatterer is within the above range, since the front light conversion rate increases with the increase of the blue light absorption rate, a synergistic effect of light conversion and / or brightness can be expected.

[0037] According to an exemplary embodiment, the scatterer is a light scattering particle capable of reflecting light. The light scattering particle may be selected from inorganic particles, organic particles, and a composite of organic particles and inorganic particles.

[0038] According to one exemplary embodiment, the scatterer may include a plurality of inorganic particles having particle sizes different from each other. For example, the scatterer may include two or more kinds of inorganic particles having particle sizes different from each other.

[0039] According to an exemplary embodiment, the plurality of inorganic particles may include first inorganic particles and second inorganic particles, wherein the particle size of the first inorganic particles may be larger than the particle size of the second inorganic particles. Here, the first inorganic particles may be referred to as particles of large particle size, and the second particles may be referred to as particles of small particle size.

[0040] Since the photoresist resin composition includes scatterers with large particle sizes, the effects of increasing the scattering effect and the refractive index can be obtained. At the same time, since the photoresist resin composition includes scatterers with small particle sizes, the additional effect of increasing the refractive index can be obtained.

[0041] According to an exemplary embodiment, the particle size of the inorganic particles may be greater than 20nm and less than 2μm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 1.5μm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 1μm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 900nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 800nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 700nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 600nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 500nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 400nm. For example, the particle size of the inorganic particles may be greater than 20nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 30nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 40nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 50nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 60nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 70nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 80nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 90nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 100nm and less than or equal to 300nm. For example, the particle size of the inorganic particles may be greater than or equal to 100nm and less than or equal to 400nm. For example, the particle size of the inorganic particles may be greater than or equal to 100nm and less than or equal to 500nm. For example, the particle size of the inorganic particles may be greater than or equal to 100nm and less than or equal to 600nm. For example, the particle size of the inorganic particles may be greater than or equal to 100 nm and less than or equal to 700 nm. For example, the particle size of the inorganic particles may be greater than or equal to 100 nm and less than or equal to 800 nm. For example, the particle size of the inorganic particles may be greater than or equal to 100 nm and less than or equal to 900 nm. For example, the particle size of the inorganic particles may be greater than or equal to 100 nm and less than or equal to 1 μm.

[0042] When the particle size of the scatterer is too small, the scattering effect is small, so that the amount of scattered light absorbed by the quantum dots is reduced, resulting in the failure to increase the sufficient light conversion rate. At the same time, when the particle size of the scatterer is too large, the scattering effect is large, so that the incident light is hardly emitted to the outside, resulting in a decrease in brightness. Therefore, when the particle size of the scatterer is within the above range, the light conversion rate is improved.

[0043] When the scatterer has a particle size within the above range (e.g., greater than 20 nm and less than 2 μm) and a large particle size scatterer and a small particle size scatterer having different particle sizes are used together, the refractive index difference between the upper resin film and the lower resin film may be caused by the effect of the small particle size scatterer increasing the refractive index. As a result, the blue light can be fully reflected into the resin, so that the blue light can be recovered. Therefore, the absorptivity and light conversion efficiency of the blue light are also increased.

[0044] According to one exemplary embodiment, the scatterer may include inorganic particles having a refractive index greater than 1.5. When the scatterer has a refractive index exceeding 1.5, sufficient scattering may be obtained.

[0045] For example, the scatterer may have a refractive index of 1.8 or greater. For example, the scatterer may have a refractive index of 2.0 or greater. For example, the scatterer may have a refractive index of 2.1 or greater. For example, the scatterer may have a refractive index of 2.2 or greater. For example, the scatterer may have a refractive index of 2.3 or greater. For example, the scatterer may have a refractive index of 2.4 or greater. For example, the scatterer may have a refractive index of 2.5 or greater. For example, the scatterer may have a refractive index of 2.6 or greater. For example, the scatterer may have a refractive index of 2.7 or greater. For example, the scatterer may have a refractive index of 4.0 or less.

[0046] When the scatterer has a refractive index greater than 1.5, an excellent scattering effect may be obtained due to the difference from the resin refractive index of 1.5.

[0047] The scatterer may be an inorganic particle having the above-mentioned particle size and the above-mentioned refractive index. For example, the scatterer may be an inorganic particle having a refractive index greater than 1.5 and a particle size in the range of about 100 nm to about 300 nm.

[0048] According to an exemplary embodiment, the scatterer may include inorganic oxide particles, organic particles, or any combination thereof.

[0049] According to one exemplary embodiment, the scatterer may include BiFeO 3 , Fe 2 O 3 , WO 3 、TiO 2 、SiC、BaTiO 3 、ZnO、ZrO 2、ZrO、Ta 2 O 5 、MoO 3 、TeO 2 , Nb 2 O 5 , Fe 3 O 4 、V 2 O 5 , Cu 2 O, BP, Al 2 O 3 、In 2 O 3 SnO 2 , Sb 2 O 3 , ITO or any combination thereof.

[0050] For example, the scatterer may include TiO 2 .

[0051] According to one exemplary embodiment, the photoresist resin composition may include a plurality of quantum dots.

[0052] The quantum dots may each be a particle having a size of several nanometers to several tens of nanometers and formed of hundreds to thousands of atoms.

[0053] The quantum confinement effect can be observed in quantum dots due to the very small particle size. The term "quantum confinement effect" refers to the phenomenon that the band gap of an object increases as the size of the object decreases to nanometers or less. Therefore, when light with a wavelength having energy greater than the band gap of the quantum dot is applied to the quantum dot, the quantum dot absorbs the light and undergoes a transition to an excited state. While emitting light with a predetermined wavelength, the quantum dot falls to the ground state. Here, the wavelength of the light emitted therefrom corresponds to the band gap.

[0054] According to an exemplary embodiment, the quantum dot may include at least one selected from the group consisting of: a compound of Group II-VI in the periodic table, a compound of Group III-V in the periodic table, a compound of Group IV-VI, an element of Group IV, a compound of Group IV-IV in the periodic table, and any combination thereof. According to an exemplary embodiment, the quantum dot may include an alloy of the aforementioned compound and element. Herein, the alloy may include an alloy of the aforementioned compound and a transition metal.

[0055] The quantum dot may have a core-shell structure including a core and a shell covering the core.

[0056] For example, the II-VI semiconductor nanocrystals may include: a binary compound selected from CdO, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, MgSe, MgS, or any combination thereof; a binary compound selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, Cd The invention relates to a ternary compound of ZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS or any combination thereof; a quaternary compound selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe or any combination thereof. The II-VI semiconductor nanocrystals may include alloys of the aforementioned compounds and transition metals.

[0057] For example, III-V semiconductor nanocrystals may include: binary compounds selected from GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, InSb, and any combination thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InPAs, InPSb, GaAlNP, or any combination thereof; and quaternary compounds selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof. III-V semiconductor nanocrystals may include alloys of the aforementioned compounds and transition metals.

[0058] The III-V semiconductor nanocrystal may further include at least one element selected from the group II elements such as Zn, Cd, Hg and Mg in addition to the group III and V elements. For example, when the III-V semiconductor nanocrystal further includes the group II element, the III-V semiconductor nanocrystal may include InZnP.

[0059] For example, IV-VI semiconductor nanocrystals may include: a binary compound selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, or any combination thereof; a ternary compound selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or any combination thereof; and a quaternary compound selected from SnPbSSe, SnPbSeTe, SnPbSTe, or any combination thereof. IV-VI semiconductor nanocrystals may include alloys of the aforementioned compounds and transition metals.

[0060] For example, the element of Group IV of the periodic table may be selected from Si, Ge, and any combination thereof.

[0061] For example, the compound of Group IV-IV in the periodic table may be a binary compound selected from SiC, SiGe, and any combination thereof, or an alloy of the binary compound and a transition metal.

[0062] Here, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle at a concentration that is divided into partially different states. In addition, the quantum dot may have a core-shell structure so that one quantum dot may be covered by another quantum dot. The interface between the core and the shell may have a concentration gradient, wherein the concentration of the element present on the shell becomes lower toward the center.

[0063] The core may include at least one compound selected from CdS, CdSe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdTe, CdSeS, CdSeTe, CdZnS, CdZnSe, GaN, GaP, GaAs, GaInP, GaInN, InP, InAs, InZnP, ZnO or an alloy thereof with a transition metal.

[0064] The shell may include at least one compound selected from CdS, CdSe, ZnSe, ZnSeS, ZnS, ZnTe, CdTe, CdO, ZnO, InP, GaN, GaP, GaInP, GaInN, HgS and HgSe, or an alloy thereof with a transition metal.

[0065] The quantum dots having a core-shell structure may have an average core diameter in the range of about 2 nm to about 10 nm and an average shell thickness in the range of about 1 nm to about 10 nm. In addition, the quantum dots may have an average diameter in the range of about 3 nm to about 20 nm.

[0066] The quantum dot may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Within this range, the color purity or color reproducibility of the quantum dot may be improved. In addition, the light emitted by the quantum dot may be emitted in all directions, and therefore, a wide viewing angle may be improved.

[0067] Although quantum dots are composed of the same material, they can have different emission wavelengths depending on the size of the quantum dots. The smaller the size of the quantum dots, the shorter the wavelength of the emitted light. Therefore, by controlling the size of the quantum dots included in the photoresist resin composition, the emission color of the quantum dots can be changed in various ways.

[0068] In addition, the shape of the quantum dot may be spherical, pyramidal or multi-armed, nanowire or cubic nanoparticles, nanotubes, nanofibers or nanosheet particles. However, the shape is not limited thereto and may include any shape commonly used in the related art.

[0069] According to an exemplary embodiment, the amount of quantum dots may be in the range of about 1 part by weight to about 80 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition. For example, the amount of quantum dots may be in the range of about 2 parts by weight to about 75 parts by weight, or in the range of about 5 parts by weight to about 70 parts by weight, based on 100 parts by weight of the total amount of the photoresist resin composition. For example, the amount of quantum dots may be in the range of about 20 parts by weight to about 60 parts by weight, based on 100 parts by weight of the total amount of the photoresist resin composition.

[0070] For example, based on 100 parts by weight of the total amount of the photoresist resin composition, the amount of quantum dots may be in the range of about 20 parts by weight to about 50 parts by weight. For example, based on 100 parts by weight of the total amount of the photoresist resin composition, the amount of quantum dots may be in the range of about 30 parts by weight to about 50 parts by weight. For example, based on 100 parts by weight of the total amount of the photoresist resin composition, the amount of quantum dots may be in the range of about 30 parts by weight to about 60 parts by weight.

[0071] When the amount of the quantum dots satisfies the above range, the brightness can be improved by sufficient light emission.

[0072] According to one exemplary embodiment, the quantum dots and the scatterers may be included in a weight ratio ranging from about 1:1 to about 10:1.

[0073] For example, the quantum dots and the scatterers may be included in a weight ratio in the range of about 2:1 to about 10:1. For example, the quantum dots and the scatterers may be included in a weight ratio in the range of about 2:1 to about 9:1. However, the weight ratio is not limited thereto. Considering the light scattering of the scatterers, the weight ratio of the included quantum dots and the scatterers may be appropriately selected within the above range.

[0074] According to one exemplary embodiment, the photoresist resin composition may include a photopolymerizable monomer.

[0075] The photopolymerizable monomer may be polymerized upon exposure to light to form a pattern during the pattern forming process.

[0076] For example, the photopolymerizable monomer may include a monofunctional ester of (meth) acrylic acid having at least one ethylenically unsaturated double bond, a polyfunctional ester of (meth) acrylic acid having at least one ethylenically unsaturated double bond, or any combination thereof. When the photopolymerizable compound has an ethylenically unsaturated double bond, polymerization thereof can be fully performed when exposed during the pattern forming process. A pattern having excellent heat resistance, light resistance, and chemical resistance can be formed.

[0077] According to an exemplary embodiment, the photopolymerizable monomer may include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, bisphenol A type di(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol acrylate, The term "(meth)acrylate" may refer to acrylate and / or methacrylate.

[0078] The amount of the photopolymerizable monomer may be from about 0.5 parts by weight to about 30 parts by weight based on 100 parts by weight of the total amount of the photoresist composition. For example, the amount of the photopolymerizable monomer may be from about 1 part by weight to about 30 parts by weight based on 100 parts by weight of the total amount of the photoresist composition. According to an exemplary embodiment, the amount of the photopolymerizable monomer may be from about 5 parts by weight to about 20 parts by weight based on 100 parts by weight of the total amount of the photoresist composition. When the amount of the photopolymerizable monomer is within this range, the color conversion element prepared by using the photoresist composition may have excellent pattern characteristics and development performance.

[0079] According to one exemplary embodiment, the photoresist resin composition may include a photopolymerization initiator.

[0080] The photopolymerization initiator may initiate polymerization of the photopolymerizable monomer according to the wavelength of light such as visible light, ultraviolet light, and deep ultraviolet light.

[0081] The photoresist resin composition may include a photopolymerization initiator. Therefore, its high degree of photocuring can prevent undercut formation in a pattern formed by using the photoresist resin composition. Therefore, a color conversion element including a film prepared by using the photoresist resin composition can have excellent pattern characteristics.

[0082] The photopolymerization initiator may include oxime-based compounds, acetophenone-based compounds, thioxanthone-based compounds, and benzophenone-based compounds, or any combination thereof.

[0083] Oxime compounds may include 1-[4-(phenylthio)phenyl]-1,2-octanedione 2-(O-benzoyl oxime), 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butane-1-one, 1-(4-phenylsulfanylphenyl)-butane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-butane-1-one-2-oxime-O-acetate, 2-(O-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(O-acetooxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, O-ethoxycarbonyl-α-oxyamino-1-phenylpropane-1-one, or any combination thereof.

[0084] The acetophenone compound may include 4-phenoxydichloroacetophenone, 4-tert-butyldichloroacetophenone, 4-tert-butyltrichloroacetophenone, 2,2-diethoxyacetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 1-(4-isopropylphenyl)-2-hydroxy-2-methyl-propane-1-one, 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropane-1-one, 4-(2-hydroxyethoxy)-phenyl-(2-hydroxy-2-propyl)ketone, 1-hydroxycyclohexylphenylketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propane-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1, or any combination thereof.

[0085] The thioxanthone compound may include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, or any combination thereof.

[0086] The benzophenone-based compound may include benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, 4-benzoyl-4′-methyldiphenyl sulfide, 3,3′-dimethyl-4-methoxybenzophenone, or any combination thereof.

[0087] According to one exemplary embodiment, the photoresist resin composition may include at least one photopolymerization initiator.

[0088] For example, the photoresist resin composition may include a first photopolymerization initiator and a second photopolymerization initiator. The first photopolymerization initiator and the second photopolymerization initiator may be independently selected from the aforementioned oxime compounds, acetophenone compounds, thioxanthone compounds, and benzophenone compounds. Here, the photoresist resin composition may include the first photopolymerization initiator and the second photopolymerization initiator in a weight ratio in the range of about 1:1 to about 50:1. When the weight ratio of the included first photopolymerization initiator and the second photopolymerization initiator is within this range, the pattern characteristics may be improved due to the increase in photoinitiation efficiency.

[0089] According to an exemplary embodiment, the total amount of the first photopolymerization initiator and the second photopolymerization initiator in the photoresist resin composition may be in a range of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition. When the total amount of the first photopolymerization initiator and the second photopolymerization initiator is within this range, the photopolymerizable monomer may be sufficiently photopolymerized when exposed during a pattern forming process, thereby preventing a decrease in transmittance caused by unreacted initiators.

[0090] According to one exemplary embodiment, the photoresist resin composition may include a binder resin.

[0091] The binder resin may increase adhesion between a color conversion element prepared by using the photoresist resin composition and a substrate by adjusting the viscosity of the photoresist resin composition, so that a pattern having excellent surface smoothness may be formed during a developing process.

[0092] According to one exemplary embodiment, the binder resin may be alkali soluble.

[0093] According to one exemplary embodiment, the binder resin may include epoxy resin, acrylic resin, or any combination thereof.

[0094] The epoxy resin may improve heat resistance of a pattern formed by using the photoresist resin composition and dispersion stability of quantum dots, so that pixels having a desired resolution may be formed during a development process.

[0095] According to an exemplary embodiment, the epoxy resin may be a novolac epoxy resin, a tetramethyl biphenyl epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, an alicyclic epoxy resin, or any combination thereof.

[0096] According to another exemplary embodiment, the epoxy equivalent of the epoxy resin may be about 150 g / eq to about 200 g / eq. If the epoxy equivalent of the epoxy resin is within this range, the hardness of the pattern formed by using the photoresist resin composition can be increased, and the quantum dots can be effectively fixed in the structure forming the pattern.

[0097] The acrylic resin may prevent protrusions from being formed on a pattern formed by using the photoresist resin composition, to improve heat resistance of the pattern, to improve color properties of the pattern such as brightness and contrast by increasing transmittance, and to improve chemical resistance of the pattern.

[0098] The acrylic resin, which may be a copolymer of a first ethylenically unsaturated monomer and a second ethylenically unsaturated monomer copolymerizable therewith, may be a resin including at least one acrylic acid repeating unit.

[0099] The first ethylenically unsaturated monomer may be an ethylenically unsaturated monomer including at least one carboxyl group. For example, the first ethylenically unsaturated monomer may include acrylic acid, methacrylic acid, maleic acid, itaconic acid, fumaric acid, or any combination thereof.

[0100] According to one exemplary embodiment, the amount of the first ethylenically unsaturated monomer may be about 5 parts by weight to about 50 parts by weight based on 100 parts by weight of the total amount of the acrylic resin. According to another exemplary embodiment, the amount of the first ethylenically unsaturated monomer may be about 10 parts by weight to about 40 parts by weight based on 100 parts by weight of the total amount of the acrylic resin.

[0101] According to one exemplary embodiment, the second ethylenically unsaturated monomer may include: an aromatic vinyl compound such as styrene, α-methylstyrene, vinyltoluene, and vinylbenzyl methyl ether; an unsaturated carboxylic acid ester compound such as methyl(meth)acrylate, ethyl(meth)acrylate, butyl(meth)acrylate, 2-hydroxyethyl(meth)acrylate, 2-hydroxybutyl(meth)acrylate, benzyl(meth)acrylate, cyclohexyl(meth)acrylate, and phenyl(meth)acrylate; an unsaturated carboxylic acid aminoalkyl ester compound such as 2-aminoethyl(meth)acrylate and 2-dimethylaminoethyl(meth)acrylate; a carboxylic acid vinyl ester compound such as vinyl acetate and vinyl benzoate; an unsaturated carboxylic acid glycidyl ester compound such as glycidyl(meth)acrylate; an acrylonitrile compound such as (meth)acrylonitrile; an unsaturated amide compound such as (meth)acrylamide; or any combination thereof.

[0102] According to one exemplary embodiment, the acrylic resin may include a (meth)acrylic acid / benzyl methacrylate copolymer, a (meth)acrylic acid / benzyl methacrylate / styrene copolymer, a (meth)acrylic acid / benzyl methacrylate / 2-hydroxyethyl methacrylate copolymer, a (meth)acrylic acid / benzyl methacrylate / styrene / 2-hydroxyethyl methacrylate copolymer, or any combination thereof.

[0103] According to one exemplary embodiment, the binder resin may have a weight average molecular weight of about 6,000 g / mol to about 50,000 g / mol. According to another exemplary embodiment, the binder resin may have a weight average molecular weight of about 6,000 g / mol to about 16,000 g / mol. When the weight average molecular weight of the binder resin is within these ranges, the photoresist resin composition may have excellent physical and chemical properties and appropriate viscosity, and may provide excellent adhesion between the color conversion element and the substrate.

[0104] According to one exemplary embodiment, the amount of the binder resin may be about 1 part by weight to about 30 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition. According to another exemplary embodiment, the amount of the binder resin may be about 5 parts by weight to about 20 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition. When the amount of the binder resin is within these ranges, excellent developing performance and high surface smoothness due to increased cross-linking may be obtained while preparing a color conversion element.

[0105] According to one exemplary embodiment, the photoresist resin composition may include a solvent.

[0106] The solvent may be a material that has compatibility with the quantum dots, the photopolymerization monomer, the photopolymerization initiator, and the binder resin but does not participate in the reaction therewith.

[0107] For example, the solvent may include: alcohols such as methanol and ethanol; ethers such as dichloroethyl ether, n-butyl ether, diisoamyl ether, methylphenyl ether and tetrahydrofuran; glycol ethers such as ethylene glycol methyl ether, ethylene glycol ethyl ether and propylene glycol methyl ether; cellosolve acetates such as methyl cellosolve acetate, ethyl cellosolve acetate and diethyl cellosolve acetate; carbitols such as methyl ethyl carbitol, diethyl carbitol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether and diethylene glycol diethyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol monoethyl ether acetate and propylene glycol propyl ether acetate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, methyl n-propyl ketone, methyl n-butyl ketone, methyl n-amyl ketone and 2-heptanone; saturated aliphatic monocarboxylic acid alkyl esters such as ethyl acetate, n-butyl acetate and isobutyl acetate; lactic acid alkyl esters such as methyl lactate and ethyl lactate; glycolic acid alkyl esters such as methyl glycolate, ethyl glycolate and butyl glycolate; alkoxy acetate alkyl esters such as Methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate and ethyl ethoxyacetate; alkyl 3-hydroxypropionates, such as methyl 3-hydroxypropionate and ethyl 3-hydroxypropionate; alkyl 3-alkoxypropionates, such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate and methyl 3-ethoxypropionate; alkyl 2-hydroxypropionates, such as methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate and propyl 2-hydroxypropionate; alkyl 2-alkoxypropionates, such as methyl 2-methoxypropionate , ethyl 2-methoxypropionate, ethyl 2-ethoxypropionate and methyl 2-ethoxypropionate; alkyl 2-hydroxy-2-methylpropionates, such as methyl 2-hydroxy-2-methylpropionate and ethyl 2-hydroxy-2-methylpropionate; alkyl 2-alkoxy-2-methylpropionates, such as methyl 2-methoxy-2-methylpropionate and ethyl 2-ethoxy-2-methylpropionate; esters, such as 2-hydroxyethyl propionate, 2-hydroxy-2-methylethyl propionate, hydroxyethyl acetate and methyl 2-hydroxy-3-methylbutyrate; or ketoesters, such as ethyl pyruvate. In addition, the solvent may include N-methylformamide, N,N-dimethylformamide, N-methylformamide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzyl ethyl ether, dihexyl ether, acetylacetone, isophorone, hexanoic acid, octanoic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl malate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate, or any combination thereof.

[0108] According to an exemplary embodiment, the solvent may include: glycol ethers, such as ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates, such as ethyl cellosolve acetate; esters, such as 2-hydroxyethyl propionate; diethylene glycol, such as diethylene glycol monomethyl ether; propylene glycol alkyl ether acetates, such as propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate; or any combination thereof.

[0109] The amount of the solvent may be about 1 to 99 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition. For example, the amount of the solvent may be about 30 to 99 parts by weight, or about 70 to 98 parts by weight, or about 70 to 95 parts by weight, based on 100 parts by weight of the total amount of the photoresist resin composition. When the amount of the solvent is within this range, the photoresist resin composition may have a suitable viscosity, so that the efficiency of processing a color conversion element using the photoresist resin composition may be increased.

[0110] According to one exemplary embodiment, the photoresist resin composition may optionally include additives.

[0111] The photoresist resin composition may further include an additive. The additive may include a thermal curing agent, a dispersant, an antioxidant, a UV absorber, or any combination thereof.

[0112] The photoresist resin composition may further include a thermal curing agent to increase the curing efficiency and curing rate of the composition.

[0113] For example, the thermal curing agent may include 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, 2,5-dimercapto-1,3,4-thiadiazole, 2-mercapto-4,6-dimethylaminopyridine, pentaerythritol tetrakis(3-mercaptopropionate), pentaerythritol tris(3-mercaptopropionate), pentaerythritol tetrakis(2-mercaptoacetate), pentaerythritol tris(2-mercaptoacetate), trimethylolpropane tris(2-mercaptoacetate), trimethylolpropane tris(3-mercaptopropionate), trimethylolethane tris(2-mercaptoacetate) and trimethylolethane tris(3-mercaptopropionate), or any combination thereof.

[0114] The photoresist resin composition may further include a dispersant to increase the dispersibility of the quantum dots.

[0115] For example, the dispersant may include a commercially available surfactant. The dispersant may include a silicon-based surfactant, a fluorine-based surfactant, an ester surfactant, a cationic surfactant, an anionic surfactant, a nonionic surfactant, an amphoteric surfactant, or any combination thereof. According to an exemplary embodiment, the dispersant may include a polyoxyethylene alkyl ether, a polyoxyethylene alkylphenyl ether, a polyethylene glycol diester, a sorbitan fatty acid ester, a fatty acid-modified polyester, a tertiary amine-modified polyurethane, a polyethyleneimine, or any combination thereof. According to another exemplary embodiment, the dispersant may include commercially available products such as KP (manufactured by Shin-Etsu Chemical Co., Ltd.), POLYFLOW (manufactured by Kyoeisha Chemical Co., Ltd.), EFTOP (manufactured by Tohkem Products Corporation), MEGAFACE (manufactured by Dainippon Ink and Chemicals, Inc.), Fluorad (manufactured by Sumitomo 3M, Ltd.), AsahiGuard and Surflon (manufactured by Asahi Glass Co., Ltd.), SORSPERSE (manufactured by Zeneka Co.), EFKA (manufactured by EFKA Chemicals), PB 821 (manufactured by Ajinomoto Fine-Techno Co., Ltd.), or any combination thereof.

[0116] Examples of the antioxidant may include 2,2'-thiobis(4-methyl-6-tert-butylphenol), 2,6-di-tert-butyl-4-methylphenol, or any combination thereof, and examples of the UV absorber may include 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, alkoxybenzophenone, or any combination thereof.

[0117] According to one exemplary embodiment, the amount of the additive may be about 0.01 parts by weight to about 10 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition.

[0118] According to another aspect of the present disclosure, a photoresist resin composition is provided, which is prepared by adding a plurality of quantum dots, a photopolymerizable monomer, a photopolymerization initiator, a scatterer, a binder resin and a solvent into a stirrer and stirring the mixture at room temperature for 30 minutes to 1 hour. Here, additives may be further included to obtain the desired properties of the photoresist resin composition.

[0119] The quantum dots, the photopolymerization monomers, the photopolymerization initiator, the scatterer, the binder resin, the solvent, and the additives may be as described above.

[0120] According to another aspect of the present disclosure, a film prepared by heat-treating a photoresist resin composition is provided. For example, the film may not contain a solvent.

[0121] According to an exemplary embodiment, a film can be prepared on a substrate by using a photoresist resin composition according to a method known in the art. For example, the film can be prepared by: (i) a coating process of coating a substrate with a photoresist resin composition; (ii) a solvent removal process of removing a solvent from the coated photoresist resin composition; (iii) an exposure process of exposing the photoresist resin composition from which the solvent is removed into a pattern shape by actinic light; (iv) a developing process of developing the exposed photoresist resin composition with an aqueous developing solution; and (v) a heat treatment process performed on the developed photoresist resin composition.

[0122] According to another aspect of the present disclosure, a color conversion element including the film is provided.

[0123] Figure 1 is a schematic diagram of the structure of a color conversion element 100 according to an exemplary embodiment.

[0124] refer to Figure 1 The color conversion element 100 includes a first region C1, a second region C2, and a third region C3 to realize different colors. For example, when external light (e.g., blue light) is incident on the color conversion element 100, the first region C1, the second region C2, and the third region C3 may emit red light, green light, and blue light, respectively.

[0125] The first region C1 may convert incident light into light with a longer wavelength than the incident light and emit the converted light.

[0126] According to an exemplary embodiment, the first region C1 may include a first film 140 prepared by using a photoresist resin composition including a plurality of quantum dots. Here, the quantum dots may be the same as those described above. As described above, when external light (e.g., blue light) is applied thereto, the quantum dots may emit light (i.e., red light) having a wavelength of about 620 nm to about 670 nm. Therefore, when blue light is incident on the first region C1, the blue light may be converted into red light by the quantum dots included in the first film 140.

[0127] The first film 140 may further include a scatterer. Here, the scatterer may be as described above. The scatterer may scatter the light incident on the first film 140 so that the front brightness and the side brightness of the light emitted from the first film 140 may become consistent, thereby increasing color reproducibility. In addition, the scatterer may scatter the incident light so that the contact efficiency between the incident light and the quantum dots may be increased, thereby improving the light conversion rate.

[0128] According to an exemplary embodiment, the first region C1 may further include a first band-cut filter 120 to prevent blue light that is not converted by the first film 140 from being emitted from the first region C1.

[0129] The first band-cut filter 120 may refer to a filter that selectively transmits light having a specific wavelength band. For example, the first band-cut filter 120 may transmit light having a specific wavelength band and include a single layer or multiple layers for absorbing or reflecting light outside the specific wavelength band. Here, when the first band-cut filter 120 includes multiple layers, each of the multiple layers includes a different material and has a different refractive index. For example, the first band-cut filter 120 may be a yellow filter that absorbs blue light and transmits light other than blue light.

[0130] The second region C2 may convert incident light into second color light having a longer wavelength than the incident light and emit the converted light.

[0131] According to an exemplary embodiment, the second region C2 may include a second film 150 prepared by using a photoresist resin composition including a plurality of quantum dots. Here, the quantum dots may be the same as those described above. As described above, when external light (e.g., blue light) is applied thereto, the quantum dots may emit light (i.e., green light) having a wavelength of about 520 nm to about 570 nm. Therefore, when blue light is incident on the second region C2, the blue light may be converted into green light by the quantum dots included in the second film 150.

[0132] The second film 150 may further include a scatterer. Here, the scatterer may be as described above. The scatterer may scatter the light incident on the second film 150 so that the front brightness and the side brightness of the light emitted from the second film 150 may become consistent. In addition, the scatterer may scatter the incident light so that the contact efficiency between the incident light and the quantum dots may be increased, thereby improving the light conversion rate.

[0133] According to another exemplary embodiment, the second region C2 may further include a first band-cut filter 120 to prevent blue light that is not converted by the second film 150 from being emitted from the second region C2.

[0134] The third region C3 may include a third film 160 including a scatterer that scatters incident light. Since the third film 160 passes the incident blue light as it is, the third region C3 emits blue light.

[0135] The diffuser may diffuse light incident on the third film 160 so that front brightness and side brightness of light emitted from the third film 160 may become uniform.

[0136] Figure 2is a schematic diagram of a structure of a color conversion element according to another exemplary embodiment.

[0137] refer to Figure 2 In order to transmit incident light but prevent color-converted light from being emitted toward the incident light, a second band-cut filter 170 may be further disposed on surfaces of the first film 140 , the second film 150 , and the third film 160 , on which light is incident.

[0138] According to an exemplary embodiment, the second band-cut filter 170 may refer to a filter that emits light having a specific wavelength band and reflects light other than the light having the specific wavelength band. For example, the second band-cut filter 170 may be a filter that transmits blue light but reflects green light and red light. The second band-cut filter 170 may be arranged on the surface of the first film 140, the second film 150, and the third film 160 on which light is incident, so that the color-converted light emitted from the quantum dot toward the incident light can be reflected and emitted to the outside. Therefore, the light conversion rate can be increased by the second band-cut filter 170.

[0139] According to one exemplary embodiment, the second band-cut filter 170 may include a single layer or a plurality of layers.

[0140] For example, the second band-cut filter 170 may include a plurality of layers, wherein each of the plurality of layers includes a different material and has a different refractive index. For example, the second band-cut filter 170 may include a plurality of layers, wherein the first layer and the second layer are alternately stacked. For example, the first layer may have a low refractive index, and the second layer may have a high refractive index.

[0141] According to an exemplary embodiment, the second band-cut filter 170 may include Si oxide, Si carbide, Si nitride, or metal oxide. For example, the first layer may include Si oxide, Si carbide, or Si nitride, and the second layer may include oxides of Ti, Ta, Hf, and Zr. Alternatively, the first layer may include oxides of Ti, Ta, Hf, and Zr, and the second layer may include Si oxide, Si carbide, or Si nitride.

[0142] According to one exemplary embodiment, the second band cut filter 170 may include a Si nitride layer and a Si oxide layer. For example, the second band cut filter 170 may include a plurality of layers in which Si nitride layers and Si oxide layers are alternately stacked.

[0143] According to one exemplary embodiment, the first region C1, the second region C2, and the third region C3 may be disposed on the transparent substrate 110. The barrier wall 130 may be formed on the transparent substrate 110 to partition each of the regions C1 to C3.

[0144] refer to Figures 3 to 5, electronic devices including color conversion elements 1300, 1400, and 1500 and display devices 2300, 2400, and 2500 are provided.

[0145] According to an exemplary embodiment, the color conversion elements 1300, 1400, and 1500 may be as follows: Figure 1 and Figure 2 The electronic device may include: a first film 1340 configured to convert incident light emitted from a display device into a first color light and emit the first color light; a second film 1350 configured to convert incident light emitted from the display device into a second color light and emit the second color light; and a third film 1360 configured to transmit incident light emitted from the display device.

[0146] According to an exemplary embodiment, although not specifically shown, the electronic device may further include a first band-cut filter disposed on the color conversion element and configured to prevent emission of light having the same wavelength range as the incident light. The first band-cut filter may be as described above.

[0147] According to one exemplary embodiment, the first color light may be red light, and the second color light may be green light.

[0148] According to an exemplary embodiment, although not specifically shown, the electronic device may further include a second band-cut filter disposed between the display device and the color conversion element and configured to prevent light emitted from the conversion element from being emitted toward the display device. The second band-cut filter may be as described above.

[0149] According to one exemplary embodiment, the display device may include a liquid crystal display device, an organic light emitting display device, or an inorganic light emitting display device.

[0150] According to one exemplary embodiment, the display device may include a liquid crystal display device, and the liquid crystal display device may include a light source for emitting blue light.

[0151] refer to Figure 3 , the liquid crystal display device 2300 may include a liquid crystal layer 2340, a thin film transistor (TFT) array layer 2330, and a substrate 2320, and may further include a light source 2310 for emitting blue light.

[0152] Although not shown, the liquid crystal display device 2300 may include a common electrode between the liquid crystal layer 2340 and the color conversion element 1300, and a pixel electrode between the liquid crystal layer 2340 and the TFT array layer 2330. With the liquid crystal layer 2340 between the pixel electrode and the common electrode, liquid crystal molecules may be aligned in a predetermined direction by an electric field generated by the pixel electrode and the common electrode, thereby controlling the amount of light by blocking or passing the light.

[0153] In addition, although not shown, the liquid crystal display device 2300 may include a first alignment layer between the liquid crystal layer 2340 and the common electrode and a second alignment layer between the liquid crystal layer 2340 and the pixel electrode.

[0154] The first alignment layer and the second alignment layer may result in uniformly aligned liquid crystal molecules, and may be formed by methods known in the art. For example, the first alignment layer and the second alignment layer may each include polyimide.

[0155] In addition, the TFT array layer 2330 may include a plurality of transistors (not shown) and gate lines and data lines that apply gate signals and data signals to the plurality of transistors, respectively. The pixel electrode may be connected to the drain of the transistor included in the TFT array layer and receive a data voltage.

[0156] In addition, although not shown, the liquid crystal display device 2300 may include a first polarizer between the common electrode and the color conversion element 1300 .

[0157] The first polarizer may be a wire grid polarizer (WGP). The WGP may include a regular array of micro metal wires arranged in parallel. The WGP reflects polarization components parallel to the metal grid and transmits polarization components perpendicular to the metal grid, thereby providing high efficiency and high brightness. In addition, the first polarizer may be a thin film formed of a polymer material.

[0158] In addition, although not shown, the liquid crystal display device 2300 may include a second polarizer between the light source 2310 and the substrate 2320 .

[0159] The substrate 2320 may be formed of various materials, such as glass or transparent plastic. According to one exemplary embodiment, the substrate 2320 may include a flexible substrate.

[0160] The light source 2310 may be a backlight unit that emits blue light.

[0161] refer to Figure 4 , the display device may be an organic light emitting display device 2400 that emits blue light.

[0162] According to one exemplary embodiment, a display apparatus may include an organic light emitting display apparatus including an organic light emitting device including an organic light emitting layer including an organic compound and emitting blue light.

[0163] The organic light emitting display device 2400 may include a light emitting layer 2410 emitting blue light, a TFT array layer 2430 , and a substrate 2420 .

[0164] The TFT array layer 2430 and the substrate 2420 may be as described above.

[0165] The organic light-emitting display device 2400 may include an organic light-emitting device disposed between the TFT array layer 2430 and the color conversion element 1400 and configured to emit blue light. Although not specifically shown, such an organic light-emitting device may include: a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode and including the light-emitting layer 2410, wherein the organic layer may include: i) a hole transport region disposed between the first electrode and the light-emitting layer 2410 and including a hole injection layer, a hole transport layer, a buffer layer, an electron blocking layer, or any combination thereof, and ii) an electron transport region disposed between the light-emitting layer 2410 and the second electrode and including a hole blocking layer, a buffer layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0166] According to an exemplary embodiment, the organic light-emitting device may include an organic layer including at least two light-emitting layers. For example, the organic light-emitting device may include an organic layer between a first electrode and a second electrode, the organic layer including at least two light-emitting units, each light-emitting unit including a hole transport layer, a light-emitting layer, and an electron transport layer. In addition, a charge generation layer (CGL) may be further included between the at least two light-emitting units.

[0167] Can be manufactured according to the sequential stacking process from substrate to color conversion element Figure 4 In this regard, the process of manufacturing the color conversion element on the substrate can be omitted, resulting in an advantage of simplifying the process.

[0168] According to another exemplary embodiment, referring to Figure 5 , a color conversion element can be manufactured separately on the substrate 1510, and then the process of setting the color conversion element on the organic light emitting display device is performed to manufacture an electronic device. In addition to the substrate 1510, Figure 5 The color conversion element and Figure 5 The display device can be compared with the reference Figure 4 Same as those described.

[0169] According to another exemplary embodiment, a display apparatus may include an inorganic light emitting display apparatus including an inorganic light emitting device, wherein the inorganic light emitting device includes an inorganic light emitting layer including an inorganic compound and emitting blue light.

[0170] exist Figure 4 and 5 In the embodiment of the present invention, an organic light emitting display device is described as an example of a display device. However, the organic light emitting display device may be replaced by an inorganic light emitting device including inorganic light emitting layers 2410 and 2510 including an inorganic compound such as an inorganic fluorescent substance or a quantum dot. Here, in addition to using an inorganic light emitting device instead of an organic light emitting device, Figure 4 and Figure 5 The description of can be equally applied to the inorganic light emitting display device Figure 4 and Figure 5 middle.

[0171] Hereinafter, a photoresist resin composition and a color conversion element according to one or more exemplary embodiments will be described in more detail according to the following Synthesis Examples, Examples, and Comparative Examples.

[0172] Example

[0173] Preparation of photoresist resin composition

[0174] Preparation Example 1 (based on the solid content of the photoresist resin composition, quantum dots (QD) are 33 parts by weight, TiO 2 11.5 parts by weight)

[0175] Quantum dot inorganic particles InZnP / ZnSeS (12 wt %, 33 parts by weight based on solid content), photopolymerizable monomer (Kayarad DPHA, which is dipentaerythritol hexaacrylate) (7 wt %), photopolymerization initiator ( 369, which is 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone) (1wt%), scatterer (TiO 2 ) (3.5 wt%, 11.5 parts by weight based on solid content), a binder resin (alkali soluble resin) (6.5 wt%) and a solvent (propylene glycol methyl ether, also known as PGME) (70 wt%) were added to a reactor, and the mixture was stirred to prepare a photoresist resin composition.

[0176] Preparation Example 2

[0177] In addition to using 35 parts by weight of QD and 8 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0178] Preparation Example 3

[0179] In addition to using 35 parts by weight of QD and 15 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0180] Preparation Example 4

[0181] In addition to using 40 parts by weight of QD and 6.5 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0182] Preparation Example 5

[0183] In addition to using 40 parts by weight of QD and 11.5 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0184] Preparation Example 6

[0185] In addition to using 40 parts by weight of QD and 16.5 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0186] Preparation Example 7

[0187] In addition to using 45 parts by weight of QD and 8 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0188] Preparation Example 8

[0189] In addition to using 45 parts by weight of QD and 15 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0190] Preparation Example 9

[0191] In addition to using 47 parts by weight of QD and 11.5 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0192] Preparation Example 10

[0193] In addition to using 40 parts by weight of QD and 25 parts by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0194] Preparation Example 11

[0195] In addition to using 40 parts by weight of QD and 1 part by weight of TiO based on the solid content of the photoresist resin composition in the preparation of the photoresist resin composition, 2 A photoresist resin composition was prepared in the same manner as in Preparation Example 1 except for the above.

[0196] Evaluation Example 1: Evaluation of the light absorption rate of QD

[0197] Production of reference spectra

[0198] Before evaluating the light absorption rate of QD, in order to obtain reference data, a photoresist resin composition prepared in the same manner as Preparation Example 1 except that the QD inorganic particles were not included was applied to a glass substrate according to a spin coating method. Then, the glass substrate was dried at a temperature of 100° C. for 3 minutes to form a thin film thereon.

[0199] The thin film was placed on QE-2100 (manufactured by Otsuka Electronics Co., Ltd), and then irradiated with a light source, thereby obtaining a reference excitation spectrum.

[0200] Example 1

[0201] The photoresist resin composition of Preparation Example 1 was applied onto a glass substrate according to a spin coating method, and then, the glass substrate was dried at a temperature of 100° C. for 3 minutes to form a thin film thereon.

[0202] The thin film was placed on QE-2100 (manufactured by Otsuka Electronics Co., Ltd), and then irradiated with a light source, thereby obtaining a reference excitation spectrum.

[0203] Examples 2 to 9

[0204] A reference excitation spectrum was obtained in the same manner as in Example 1, except that the photoresist resin compositions of Preparation Examples 2 to 9 were each used instead of the photoresist resin composition of Preparation Example 1.

[0205] Comparative Examples 1 and 2

[0206] A reference excitation spectrum was obtained in the same manner as in Example 1, except that the photoresist resin compositions of Preparation Examples 10 and 11 were each used instead of the photoresist resin composition of Preparation Example 1.

[0207] Evaluation of light absorption

[0208] According to the spectra obtained in Examples 1 to 9 and Comparative Examples 1 and 2, the peak in the same band as the reference excitation spectrum is generated by absorbed photons, and the peak not shown in the reference excitation spectrum is generated by photoconverted photons. Therefore, in the reference excitation spectrum and the spectra obtained in Examples 1 to 9, the light absorption rate can be calculated by comparing the areas of the peaks generated by absorbed photons, and the calculation results are shown in Table 1.

[0209] (Table 1)

[0210]

[0211] As shown in Table 1 and Figure 6 As shown, it is confirmed that when the amount of QDs and scatterers in the photoresist resin composition is controlled, the light absorptivity of the QDs also changes, resulting in an overall increase in absorptivity with an increase in the amount of scatterers.

[0212] Evaluation Example 2: Evaluation of Color Conversion Element on Simulation of Emission Conversion Efficiency

[0213] Example 10

[0214] TiO with low refractive index (film transmittance) 2 The Mie scattering material was combined with a Monte Carlo method based on ray tracing using custom code in Python 2.7. Then, after approximating the actual spectrum, the backlight unit was defined with a random distribution and the TiO 2 After scattering, the light scattering angle is defined with a random distribution.

[0215] Here, QDs, quantum yield and absorption spectra, QDs and TiO 2 The concentration of , the thickness of a film including the QD photoresist resin composition, the transmission spectrum of the band-cut filter, and the refractive index of each layer are set as parameters.

[0216] The simulation results of the emission conversion efficiency of the color conversion element represent the relationship between the light conversion efficiency and the refractive index of the color filter including the thin film containing the photoresist resin composition, and are shown in Figure 7 In. Figure 8 As shown, the refractive index is calculated from a graph showing a change in the refractive index when a scatterer having a refractive index of 2.8 is added according to the Vegard principle.

[0217] like Figure 7 As shown, as the refractive index of the film including the photoresist resin composition increases, the front photon conversion rate also increases while the rear photon conversion rate tends to decrease. That is, it can be expected that based on the increase in the refractive index of the photoresist resin composition, the increase in the front luminous efficiency and the improvement in the front luminous brightness can be increased.

[0218] According to one or more exemplary embodiments, a color conversion element including a film prepared by using the photoresist resin composition may have excellent luminous efficiency and color reproducibility.

[0219] It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in each exemplary embodiment should generally be considered to be available for other similar features or aspects in other exemplary embodiments.

[0220] Although one or more exemplary embodiments have been described with reference to the drawings, persons skilled in the art will recognize that various changes in form and details may be made without departing from the spirit and scope defined by the following claims.

Claims

1. A photoresist resin composition comprising: Multiple quantum dots; Photopolymerizable monomers; Photopolymerization initiator; Scatterers; Binder resin; and Solvents, wherein the amount of the scatterer is in the range of 2 parts by weight to 20 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition, The photoresist resin composition includes the quantum dots and the scatterers in a weight ratio ranging from 1:1 to 10:

1.

2. The photoresist resin composition according to claim 1, wherein the scatterer comprises a plurality of inorganic particles having particle sizes different from each other, The plurality of inorganic particles each have a particle size greater than 20 nm and less than 2 μm.

3. The photoresist resin composition according to claim 1, wherein the scatterer comprises a plurality of inorganic particles having particle sizes different from each other, The plurality of inorganic particles each have a refractive index greater than 1.

5.

4. The photoresist resin composition of claim 1, wherein the scatterer comprises at least one compound selected from the group consisting of BiFeO3, Fe2O3, WO3, TiO2, SiC, BaTiO3, ZnO, ZrO2, ZrO, Ta2O5, MoO3, TeO2, Nb2O5, Fe3O4, V2O5, Cu2O, BP, Al2O3, In2O3, SnO2, Sb2O3 and ITO.

5. The photoresist resin composition of claim 1, wherein the quantum dots include at least one selected from the group consisting of: a II-VI compound, a III-V compound, a IV-VI compound, a IV-IV compound, and a IV element, or an alloy thereof with a transition metal, and The quantum dot has a core-shell structure including a core and a shell covering the core.

6. The photoresist resin composition of claim 5, wherein the core comprises at least one selected from the group consisting of CdS, CdSe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdTe, CdSeS, CdSeTe, CdZnS, CdZnSe, GaN, GaP, GaAs, GaInP, GaInN, InP, InAs, InZnP, ZnO, and alloys thereof with transition metals, and The shell includes at least one selected from the group consisting of CdS, CdSe, ZnSe, ZnS, ZnSeS, ZnTe, CdTe, CdO, ZnO, InP, GaN, GaP, GaInP, GaInN, HgS, HgSe and alloys thereof with transition metals. 7 . The photoresist resin composition of claim 1 , wherein the quantum dot has a particle size in the range of 3 nm to 20 nm. 8 . The photoresist resin composition of claim 1 , wherein an amount of the quantum dots is in a range of 20 to 60 parts by weight based on 100 parts by weight of the total amount of the photoresist resin composition.

9. The photoresist resin composition according to claim 1, wherein the photopolymerizable monomer comprises at least one compound selected from the group consisting of ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, bisphenol A di(meth)acrylate, pentaerythritol di(meth)acrylate. Acid esters, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, pentaerythritol hexa(meth)acrylate, dipentaerythritol di(meth)acrylate, dipentaerythritol tri(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, bisphenol A epoxy (meth)acrylate, ethylene glycol monomethyl ether (meth)acrylate, trimethylolpropane tri(meth)acrylate, tri(meth)acryloyloxyethyl phosphate and novolac epoxy (meth)acrylate. 10 . The photoresist resin composition of claim 1 , wherein the photopolymerization initiator comprises at least one compound selected from the group consisting of oxime compounds, acetophenone compounds, thioxanthone compounds, and benzophenone compounds. 11 . The photoresist resin composition of claim 1 , wherein the binder resin comprises at least one resin selected from the group consisting of an epoxy resin and an acrylic resin.

12. The photoresist resin composition of claim 1, wherein the solvent comprises at least one compound selected from the group consisting of ethylene glycol monoethyl ether, ethyl cellosolve acetate, 2-hydroxyethyl propionate, diethylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and propylene glycol propyl ether acetate.

13. A film prepared by heat-treating the photoresist resin composition according to any one of claims 1 to 12.

14. A color conversion element comprising the film of claim 13.

15. An electronic device comprising the color conversion element and a display device according to claim 14. 16 . The electronic device of claim 15 , wherein the display device comprises a liquid crystal display device, an organic light emitting device, or an inorganic light emitting device. 17 . The electronic device of claim 16 , wherein the display device comprises the liquid crystal display device, and the liquid crystal display device comprises a light source configured to emit blue light.

18. The electronic device of claim 16, wherein the display device comprises the organic light emitting device, the organic light emitting device comprises an organic light emitting device, and The organic light-emitting device includes a light-emitting layer including an organic compound configured to emit blue light.

19. The electronic device according to claim 16, wherein the display device comprises the inorganic light emitting device, the inorganic light emitting device comprises an inorganic light emitting device, and The inorganic light-emitting device includes a light-emitting layer, and the light-emitting layer includes an inorganic compound configured to emit blue light.

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