Optical conversion substrate, display device, and manufacturing method thereof

Abstract

Provided is a light conversion substrate, a display device, and a manufacturing method thereof. The light conversion substrate includes: a first substrate; a first light conversion pattern disposed on the first substrate and including first wavelength conversion particles; a second light conversion pattern disposed on the first substrate separately from the first light conversion pattern and including second wavelength conversion particles; and a first scattering pattern disposed on the first substrate and including scattering particles, the first scattering pattern overlapping a part of the first light conversion pattern and a part of the second light conversion pattern.

Description

Technical Field

[0001] The present invention relates to a light conversion substrate, a display device, and a manufacturing method thereof. Background Art

[0002] With the development of multimedia, the importance of display devices has become increasingly prominent. In response to this, various display devices have been developed, such as liquid crystal display devices (LCDs) and organic light emitting diode display devices (OLEDs).

[0003] In a display device, an organic light emitting display device includes organic light emitting elements as self-luminous elements. An organic light emitting element may include two opposing electrodes and an organic light emitting layer sandwiched therebetween. Electrons and holes provided from the two electrodes recombine again in the light emitting layer to generate excitons, and the generated excitons change from the excited state to the ground state, thereby emitting light.

[0004] For such an organic light emitting display device, no additional light source is required. Therefore, it can not only be configured as a device with low power consumption, light weight, and thinness, but also has high-quality characteristics such as a wide viewing angle, high brightness and contrast, and a fast response speed, and thus has attracted much attention as a next-generation display device. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a light conversion substrate and a display device that can improve the color mixing of light emitted from a light emitting element of a pixel toward a light conversion pattern layer of an adjacent pixel.

[0006] In addition, the technical problem to be solved by the present invention is also to provide a manufacturing method that can reduce the number of masks and process steps through a half-tone mask (halftone or slit mask).

[0007] The technical problems of the present invention are not limited to the above-mentioned technical problems, and those skilled in the art should be able to accurately understand other technical problems not mentioned based on the following description.

[0008] A light conversion substrate according to an embodiment for solving the above technical problem includes: a first substrate including a first region, a second region, and a third region; a first light conversion pattern disposed on the first region and including first wavelength conversion particles; a second light conversion pattern disposed on the second region separately from the first light conversion pattern and including second wavelength conversion particles; and a first scattering pattern disposed on the third region to fill a space between the first light conversion pattern and the second light conversion pattern and including scattering particles, the first scattering pattern overlapping a part of the first light conversion pattern and a part of the second light conversion pattern.

[0009] The first scattering pattern may include: a flat portion; a first overlapping portion extending from one side of the flat portion and overlapping the second light conversion pattern; and a second overlapping portion extending from the other side of the flat portion and overlapping the first light conversion pattern.

[0010] The thickness of the first overlapping portion and the second overlapping portion may be thicker than the thickness of the flat portion.

[0011] The light conversion substrate may further include: a covering layer disposed above the first light conversion pattern and the second light conversion pattern and between the first substrate and the first scattering pattern.

[0012] The light conversion substrate may further include: a second scattering pattern disposed between the first region and the second region to fill a space between the first light conversion pattern and the second light conversion pattern and overlapping a part of the first light conversion pattern and a part of the second light conversion pattern.

[0013] The first light conversion pattern, the second light conversion pattern, and the first scattering pattern may be in a shape of a stripe extending along a column direction on a plane.

[0014] The first scattering pattern and the second scattering pattern may include the same scattering particles.

[0015] The maximum thickness of the second scattering pattern may be thicker than the maximum thickness of the first light conversion pattern and thicker than the maximum thickness of the second light conversion pattern.

[0016] The first light conversion pattern and the second light conversion pattern may respectively further include the same scattering particles as the scattering particles in the first scattering pattern.

[0017] The size of the first wavelength conversion particles may be larger than the size of the second wavelength conversion particles.

[0018] The first region, the second region, and the third region may include a plurality of pixels along the column direction and a row direction intersecting the column direction. The light conversion substrate may include: a third scattering pattern disposed on the first light conversion pattern and the second light conversion pattern along the row boundaries of the plurality of pixels, and disposed between the first overlapping portion and the second scattering pattern and between the second overlapping portion and the second scattering pattern.

[0019] The thicknesses of the first overlapping portion, the second overlapping portion, the second scattering pattern, and the third scattering pattern may be the same.

[0020] A display device according to an embodiment for solving the above technical problem includes: a light conversion substrate and a light providing substrate that face each other, and may include a first pixel region, a second pixel region, and a third pixel region. The light conversion substrate includes a first substrate, and the light conversion substrate includes: a first light conversion pattern disposed on the first pixel region and including first wavelength conversion particles; a second light conversion pattern disposed separately from the first light conversion pattern on the second pixel region and including second wavelength conversion particles; and a first scattering pattern disposed on the third pixel region to fill the space between the first light conversion pattern and the second light conversion pattern and including scattering particles. The light providing substrate includes: a first light emitting region overlapping with the first light conversion pattern; a second light emitting region overlapping with the second light conversion pattern; and a third light emitting region overlapping with the first scattering pattern. The first scattering pattern overlaps with a part of the first light conversion pattern and a part of the second light conversion pattern.

[0021] The display device may further include: a second scattering pattern disposed between the first pixel region and the second pixel region to fill the space between the first light conversion pattern and the second light conversion pattern, and overlapping with a part of the first light conversion pattern and a part of the second light conversion pattern.

[0022] The first scattering pattern and the second scattering pattern may include the same scattering particles.

[0023] The first light emitting region to the third light emitting region may emit light of a first color. The first light conversion pattern may convert the light of the first color into light of a second color and output it. The second light conversion pattern may convert the light of the first color into light of a third color and output it.

[0024] The display device may further include: a filling material disposed between the light conversion substrate and the light providing substrate.

[0025] A method of manufacturing a display device according to an embodiment for solving the above technical problem includes: forming a first light conversion pattern including first wavelength conversion particles on a first substrate; forming a second light conversion pattern which is separately disposed from the first light conversion pattern and includes second wavelength conversion particles on the first substrate; and simultaneously forming the first substrate, a first scattering pattern, and a second scattering pattern, wherein the first substrate is exposed without being covered by the first light conversion pattern and the second light conversion pattern, the first scattering pattern covers a part of the first light conversion pattern and a part of the second light conversion pattern, and the second scattering pattern is disposed between the first light conversion pattern and the second light conversion pattern.

[0026] The method of manufacturing the display device may further include: forming a first cover layer on the first substrate before forming the first light conversion pattern; and forming a second cover layer on the first light conversion pattern and the second light conversion pattern.

[0027] The step of simultaneously forming the first scattering pattern and the second scattering pattern may include: coating a photoresist on the first substrate, the first light conversion pattern, and the second light conversion pattern; disposing a mask on the photoresist, wherein the mask includes: a light-shielding portion overlapping with the first light conversion pattern and the second light conversion pattern, a light-transmitting portion overlapping with the first scattering pattern covering the first substrate exposed without being covered by the first light conversion pattern and the second light conversion pattern, and a semi-transmitting portion overlapping with the first scattering pattern covering a part of the first light conversion pattern and the second scattering pattern; exposing the photoresist through the mask; and developing the photoresist.

[0028] According to an embodiment of the present invention, a light conversion substrate and a display device that can improve color mixing of light emitted from a light-emitting element of a pixel traveling to a light conversion pattern layer of an adjacent pixel can be provided.

[0029] An organic light-emitting display device according to an embodiment of the present invention can improve productivity by reducing the number of masks and process steps.

[0030] The effects according to the embodiment are not limited to the above-exemplified contents, and this specification includes more various effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a planar layout diagram showing the configuration of each pixel of the display device, and the first scattering pattern and the second scattering pattern.

[0032] Figure 2 is alongFigure 1 Cross-sectional view of a display device according to an embodiment, cut along line II-II'.

[0033] Figure 3 is along Figure 1 Cross-sectional view of a display device according to an embodiment, cut along line III-III'.

[0034] Figure 4 Figure showing the path of light passing through the first scattering pattern and the second scattering pattern.

[0035] Figure 5 Flowchart showing a manufacturing method of a first scattering pattern and a second scattering pattern according to an embodiment.

[0036] Figure 6 and Figure 7 Figure showing a manufacturing method of a first scattering pattern and a second scattering pattern according to an embodiment.

[0037] Figure 8 is along Figure 1 Cross-sectional view of a display device according to another embodiment, cut along line II-II'.

[0038] Figure 9 and Figure 10 Figure showing a manufacturing method of a first scattering pattern and a second scattering pattern according to another embodiment.

[0039] Figure 11 is along Figure 1 Cross-sectional view of a display device according to yet another embodiment, cut along line II-II'.

[0040] Figure 12 and Figure 13 Figure showing a manufacturing method of a first scattering pattern and a second scattering pattern according to yet another embodiment.

[0041] Figure 14 Planar layout diagram showing the arrangement of each pixel, the first scattering pattern, and the second scattering pattern of a display device according to another embodiment.

[0042] Figure 15 is along Figure 14 Cross-sectional view of a display device according to an embodiment, cut along line IV-IV'.

[0043] Figure 16 is along Figure 14 Cross-sectional view of a display device according to an embodiment, cut along line V-V'.

[0044] Figures 17 to 18 Figure showing a manufacturing method of a first scattering pattern and a second scattering pattern according to an embodiment. Detailed Implementation Modes

[0045] With reference to the accompanying drawings and the embodiments described in detail below, the advantages and features of the present invention, as well as the methods for achieving the above advantages and features, can be clarified. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various different ways. The embodiments are only for making the disclosure of the present invention complete and for fully informing those skilled in the technical field to which the present invention pertains about the scope of the invention. The protection scope of the present invention is determined only by the claims.

[0046] When an element or layer is described as "on" another element or layer, it includes the case where it is located directly on the other element and also includes the case where other layers or other elements are interposed therebetween. On the contrary, when an element is described as "directly on", it means that no other elements or layers are interposed therebetween. Throughout the specification, the same reference signs denote the same components.

[0047] Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described.

[0048] Figure 1 is a plan view showing the arrangement of each pixel, the first scattering pattern, and the second scattering pattern of a display device. Figure 2 is along Figure 1 a cross-sectional view of a display device according to an embodiment taken along line II-II' of Figure 3 is along Figure 1 a cross-sectional view of a display device according to an embodiment taken along line III-III' of Figure 4 is a view showing the path of light passing through the first scattering pattern and the second scattering pattern. Referring to Figures 1 to 4 , as a display device according to an embodiment, an organic light-emitting display device, a liquid crystal display device, a quantum nano-light-emitting display device, a Micro LED device, a field emission display device, an electrophoretic device, etc. can be applied. In the illustrated embodiment, an organic light-emitting display device is applied as the display device 1.

[0049] As Figure 1 shown, the display device 1 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image. In Figure 1 , the first direction DR1 represents the row direction of the pixels, and the second direction DR2 represents the column direction of the pixels.

[0050] The display area DA may be configured in the central part of the display device 1. The display area DA may include a plurality of pixels. The plurality of pixels may be arranged in a matrix form. The plurality of pixels may include: a plurality of first pixels PX1 that display a first color; a plurality of second pixels PX2 that display a second color; and a plurality of third pixels PX3 that display a third color. The first pixel PX1 may be a red pixel that emits red light having a peak wavelength in the range of about 610 nm to about 650 nm, the second pixel PX2 may be a green pixel that emits green light having a peak wavelength in the range of about 510 nm to about 550 nm, and the third pixel PX3 may be a blue pixel that emits blue light L1 having a peak wavelength in the range of about 430 nm to about 470 nm, but the embodiments of the present invention are not limited thereto.

[0051] The first pixel PX1, the second pixel PX2, and the third pixel PX3 may be arranged in a strip shape. Pixels belonging to the same pixel column may all display the same color. For example, a plurality of first pixels PX1 are arranged in the first column of pixels, a plurality of second pixels PX2 are arranged in the second column of pixels, and a plurality of third pixels PX3 are arranged in the third column of pixels, and the above-described arrangement may repeat along the row direction.

[0052] A light-shielding pattern 320 may be configured at the boundary of the pixels. The light-shielding pattern 320 may be configured between the color filters 331, 332, and 333. The first scattering pattern 353 and the second scattering pattern 360 may be arranged along the pixel row boundaries RL1, RL2, RL3 and the pixel column boundaries CL1, CL2, CL3. A detailed description of the first scattering pattern 353 and the second scattering pattern 360 will be described later.

[0053] Hereinafter, with reference to Figures 2 to 4 , a more detailed description of the cross-sectional structure of the display device 1 will be given.

[0054] As Figures 2 to 4 shown, the display device 1 may include a light-providing substrate 100, a light-converting substrate 300, and a filling material 70.

[0055] The light-providing substrate 100 may include a first base substrate 110, switching elements T1, T2, and T3, an insulating film 130, a Bank layer 150, organic light-emitting elements ED1, ED2, and ED3, and a thin-film encapsulation layer 170.

[0056] The first base substrate 110 may be formed of a light-transmissive material. The first base substrate 110 may be an organic substrate or a plastic substrate.

[0057] On the first substrate 110, at least one switching element T1, T2, T3 can be disposed for each pixel PX1, PX2, PX3. Further, on the first substrate 110, a plurality of signal lines (e.g., gate lines, data lines, power supply lines, etc.) for transmitting signals to the respective switching elements T1, T2, T3 can also be disposed.

[0058] An insulating film 130 can be disposed on the switching elements T1, T2, T3. The insulating film 130 can be formed of an organic film. Exemplarily, the insulating film 130 can include an acrylic resin, an epoxy resin, an imide resin, an ester resin, etc.

[0059] On the insulating film 130, pixel electrodes AE1, AE2, AE3 can be disposed for each pixel PX1, PX2, PX3. The respective pixel electrodes AE1, AE2, AE3 can be connected to the respective switching elements T1, T2, T3 through through-holes penetrating the insulating film 130.

[0060] In one embodiment, the pixel electrodes AE1, AE2, AE3 can be anodes of organic light-emitting elements. The pixel electrodes AE1, AE2, AE3 can include substances with a high work function that are easy to inject holes, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), etc. In the case of a front-emission display device, the pixel electrodes AE1, AE2, AE3 can further include a reflective material layer.

[0061] The Bank layer 150 can be located on the pixel electrodes AE1, AE2, AE3. The Bank layer 150 can be formed in a lattice shape along the pixel column boundaries CL1, CL2, pixel row boundaries RL1, RL2. In addition, the Bank layer 150 can include openings that partially expose the pixel electrodes AE1, AE2, AE3. Among the pixel electrodes AE1, AE2, AE3, the regions that are not covered by the Bank layer 150 and are exposed can be light-emitting regions PA1, PA2, PA3, and the regions covered by the Bank layer 150 can be non-light-emitting regions PB. The Bank layer 150 can be formed to include an organic insulating material.

[0062] On the pixel electrodes AE1, AE2, AE3 exposed due to the openings of the Bank layer 150, organic layers OL1, OL2, OL3 can be disposed. Although in the figure, the organic layer OL is shown as being connected integrally without being distinguished by pixels, the organic layer OL can also be formed to be separated by pixels PX1, PX2, PX3.

[0063] The organic layers OL1, OL2, and OL3 include an organic light-emitting layer. In the organic light-emitting layer, electrons and holes provided from the anode and the cathode recombine again to generate excitons, and the generated excitons can change from the excited state to the ground state to emit blue light L1. The organic layers OL1, OL2, and OL3 may also include auxiliary layers that assist in the injection / movement of holes and electrons.

[0064] A common electrode CE may be disposed on the organic layers OL1, OL2, and OL3. When the pixel electrodes AE1, AE2, and AE3 are the anodes of the organic light-emitting elements, the common electrode CE serves as the cathode of the organic light-emitting elements. The common electrode CE may include a material with a low work function that is easy to inject electrons, such as Li, Ca, LiF / Ca, LiF / Al, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF, Ba, or their compounds or mixtures (for example, a mixture of Ag and Mg, etc.).

[0065] The first pixel electrode AE1, the organic layer OL1, and the common electrode CE may form a first organic light-emitting element ED1, the second pixel electrode AE2, the organic layer OL2, and the common electrode CE may form a second organic light-emitting element ED2, and the third pixel electrode AE3, the organic layer OL3, and the common electrode CE may form a third organic light-emitting element ED3.

[0066] The blue light L1 emitted from the organic light-emitting elements ED1, ED2, and ED3 disposed on the respective pixels PX1, PX2, and PX3 can be supplied to the corresponding pixels PX1, PX2, and PX3. Furthermore, the light emitted from the organic light-emitting elements ED1, ED2, and ED3 can also be supplied to adjacent pixels.

[0067] The thin film encapsulation layer 170 may be disposed on the common electrode CE. In order to prevent the penetration of impurities, moisture, etc. from the outside, the thin film encapsulation layer 170 may be disposed on the upper part of the organic light-emitting elements ED1, ED2, and ED3 to seal the organic light-emitting elements ED1, ED2, and ED3. The thin film encapsulation layer 170 may include a first encapsulating inorganic film 171 containing an inorganic substance, a third encapsulating inorganic film 173, and an encapsulating organic film 172 disposed between the first encapsulating inorganic film 171 and the third encapsulating inorganic film 173.

[0068] Hereinafter, the light conversion substrate 300 will be described. The light conversion substrate 300 may include a second base substrate 310, a light-shielding pattern 320, color filters 331, 332, and 333, light conversion patterns 351 and 352, a plurality of stacked cover layers 341 and 342, a first scattering pattern 353, and a second scattering pattern 360.

[0069] The second base substrate 310 faces the first base substrate 110. The second base substrate 310 may be configured to include at least one substance selected from the exemplified substances of the first base substrate 110.

[0070] A light-shielding pattern 320 may be disposed on one surface of the second base substrate 310 facing the light-providing substrate 100. The light-shielding pattern 320 may be formed in a lattice shape along the pixel column boundaries CL1, CL2, pixel row boundaries RL1, RL2.

[0071] The light-shielding pattern 320 may block the transmission of light. Specifically, it may function to prevent color mixing of the light emitted from each pixel PX1, PX2, PX3 to the display surface. The light-shielding pattern 320 may be configured to include at least one of opaque series of organic substances, chromium-containing metal substances, or carbon black.

[0072] A color filter 330 may be disposed on one surface of the second base substrate 310. Further, the color filter 330 may be disposed on the light-shielding pattern 320. The color filter 330 may be an absorption-type filter that absorbs light of a specific wavelength and transmits light of other specific wavelengths.

[0073] The color filter 330 may include a first color filter 331, a second color filter 332, and a third color filter 333. The first color filter 331 to the third color filter 333 may be arranged in a stripe manner. The first color filter 331 to the third color filter 333 may be configured to be connected integrally along the column direction (second direction DR2) respectively. The first color filter 331 may be disposed in the first column of the pixels, the second color filter 332 may be disposed in the second column of the pixels, and the third color filter 333 may be disposed in the third column of the pixels. That is, each color filter 331, 332, 333 may extend regardless of the pixel row boundaries RL1, RL2, RL3 arranged along the column direction.

[0074] The first color filter 331 may block or absorb the blue light L1 among the blue light L1 and the red light L2 emitted from the first light conversion pattern 351. That is, the first color filter 331 may function as a blue light blocking filter that blocks the blue light L1, and may function as a filter that selectively transmits the red light L2. The first color filter 331 may include a red colorant.

[0075] The second color filter 332 can block or absorb the blue light L1 among the blue light L1 and the green light L3 emitted from the second light conversion pattern 352. That is, the second color filter 332 can function as a blue light blocking filter that blocks the blue light L1, and can also function as a filter that selectively transmits the green light L3. The second color filter 332 may include a green colorant.

[0076] The third color filter 333 can transmit the blue light L1 emitted from the first scattering pattern 353 described later. The third color filter 333 can function as a blue light transmission filter. The third color filter 333 may include a blue colorant.

[0077] The adjacent color filters 331, 332, and 333 may partially overlap each other at the pixel column boundaries CL1, CL2, and CL3, but are not limited thereto, and may also be separately arranged without overlapping each other.

[0078] A first cover layer 341 may be disposed on each of the color filters 331, 332, and 333. The first cover layer 341 may be disposed on the entire surface of the color filters 331, 332, and 333.

[0079] The first cover layer 341 can prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating each of the color filters 331, 332, and 333.

[0080] The first cover layer 341 may be formed of an inorganic substance. For example, the first cover layer 341 may be formed to include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride, etc.

[0081] A light conversion pattern 350 may be disposed on the first cover layer 341. The light conversion pattern 350 may include a first light conversion pattern 351 and a second light conversion pattern 352.

[0082] The first light conversion pattern 351 converts the blue light L1 into red light L2 and emits it, the second light conversion pattern 352 converts the blue light L1 into green light L3 and emits it, and the first scattering pattern 353 described later can transmit the blue light L1 as it is.

[0083] Refer to Figure 4, the first light conversion pattern 351 may include a first base resin 3511 and first wavelength conversion particles 3512 dispersed in the first base resin 3511, and the second light conversion pattern 352 may include a second base resin 3521 and second wavelength conversion particles 3522 dispersed in the second base resin 3521. Although not shown, each light conversion pattern 351, 352, 353 may further include scattering particles dispersed in the respective base resins 3511, 3521. The scattering particles may be metal oxide particles such as titanium oxide (TiO2), silicon oxide (SiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), or organic particles such as acrylic resin or polyurethane resin. Thereby, the path length of the light passing through the light conversion pattern 350 can be increased, and the color conversion efficiency based on the light conversion pattern 350 can be increased.

[0084] In some embodiments, the thickness of the light conversion pattern 350 may be 3 μm to 15 μm. When the light conversion pattern 350 is formed to have a thickness of 3 μm or more, the color conversion efficiency of the light passing through the light conversion pattern 350 can be improved. In some embodiments, from the viewpoint of process ease, the upper limit of the thickness of the light conversion pattern 350 may be about 15 μm.

[0085] In some embodiments, the content of the first wavelength conversion particles 3512 included in the first light conversion pattern 351 and the second wavelength conversion particles 3522 included in the second light conversion pattern 352 may be 10% to 60%. In addition, the content of the scattering particles included in the first light conversion pattern 351 and the second light conversion pattern 352 may be less than 5%. More preferably, the content of the scattering particles may be 2% or less. When the content of the scattering particles in the light conversion pattern 350 is 5% or more, the transparency of the light conversion pattern 350 becomes low, and thus the light extraction efficiency becomes low.

[0086] As the respective base resins 3511, 3521, there is no particular limitation as long as they are materials with high light transmittance and excellent dispersion characteristics with respect to the respective wavelength conversion particles 3512, 3522 and the scattering particles. For example, the respective base resins 3511, 3521 may include organic materials such as epoxy resins, acrylic resins, cardo resins, or imide resins.

[0087] The first wavelength conversion particle 3512 can convert blue light L1 into red light L2, and the second wavelength conversion particle 3522 can convert blue light L1 into green light L3. As examples of the wavelength conversion particles 3512 and 3522, quantum dots, quantum rods, phosphors, etc. can be cited. For example, a quantum dot can be a particulate substance that emits a specific color when an electron transfers from a conduction band to a valence band. In the case where both the first wavelength conversion particle 3512 and the second wavelength conversion particle 3522 are formed of quantum dots, the diameter of the quantum dots constituting the first wavelength conversion particle 3512 can be larger than the diameter of the quantum dots constituting the second wavelength conversion particle 3522.

[0088] The quantum dots can be semiconductor nanocrystal substances. The quantum dots have a specific band gap according to their composition and size, and can emit light with an inherent wavelength after absorbing light. As examples of the semiconductor nanocrystals of the quantum dots, group IV-based nanocrystals, II-VI group compound nanocrystals, III-V group compound nanocrystals, IV-VI group nanocrystals, or combinations thereof can be cited. The quantum dots can have a core-shell structure including a core and a shell, where the core includes the aforementioned nanocrystals and the shell surrounds the core.

[0089] The light conversion pattern 350 can be arranged in a stripe manner. Similar to the color filter 330, the first light conversion pattern 351 and the second light conversion pattern 352 can be configured to be connected integrally along the column direction (second direction DR2). That is, the first light conversion pattern 351 can be arranged in the first column of the pixel, and the second light conversion pattern 352 can be arranged in the second column of the pixel. That is, the first light conversion pattern 351 and the second light conversion pattern 352 can extend regardless of the pixel row boundaries RL1 and RL2 arranged along the column direction.

[0090] In addition, the light conversion pattern 350 can be formed to protrude in the thickness direction. The thickness of the light conversion pattern 350 can be about 3 μm to about 15 μm.

[0091] On a plane, the first light conversion pattern 351 and the second light conversion pattern 352 can be arranged within the corresponding pixels PX1 and PX2. That is, the sizes of the first light conversion pattern 351 and the second light conversion pattern 352 on the plane can be smaller than the sizes of the respective pixels PX1 and PX2. Therefore, the first light conversion pattern 351 and the second light conversion pattern 352 can be separately arranged with reference to the first column boundary CL1 of the pixel.

[0092] Accordingly, a height difference corresponding to the protruding height of the first light conversion pattern 351 and the second light conversion pattern 352 can be formed between the region provided with the first light conversion pattern 351 and the second light conversion pattern 352 and the region between the first light conversion pattern 351 and the second light conversion pattern 352.

[0093] A second cover layer 342 can be provided on the light conversion pattern 350. The second cover layer 342 can cover the light conversion pattern 350.

[0094] The second cover layer 342 can include an inorganic substance. The second cover layer 342 can be formed of the same substance as the first cover layer 341 or can be selected from the substances exemplified in the description of the first cover layer 341.

[0095] The first scattering pattern 353 and the second scattering pattern 360 can be provided on the second cover layer 342.

[0096] Refer to Figure 4 , the first light conversion pattern 351 is provided in the first region, the second light conversion pattern 352 is provided separately from the first light conversion pattern 351 in the second region, and the first scattering pattern 353 can be provided in the third region so as to fill the space between the first light conversion pattern 351 and the second light conversion pattern 352. The first scattering pattern 353 can be provided so as to overlap a part of the first light conversion pattern 351 and a part of the second light conversion pattern 352. The first scattering pattern 353 includes a third base resin 3531 and scattering particles 3533, and the second scattering pattern 360 can include a fourth base resin 3611 and scattering particles 3613.

[0097] In one embodiment, the first scattering pattern 353 and the second scattering pattern 360 can be made of the same substance and can be formed simultaneously by one process. Hereinafter, the specific manufacturing method will be described through Figure 6 and Figure 7 to illustrate the specific manufacturing method.

[0098] The scattered particles 3533, 3613 may have a refractive index different from that of the third base resin 3531 and the fourth base resin 3611, and may form an optical interface with the third base resin 3531 and the fourth base resin 3611. For example, the scattered particles 3533, 3613 may be light-scattering particles. As the scattered particles 3533, 3613, there is no particular limitation as long as it is a material capable of scattering at least a part of the transmitted light. For example, it may be metal oxide particles or organic particles. Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), etc. Examples of the material of the organic particles include acrylic resins or polyurethane resins, etc. The scattered particles 3533, 3613 may scatter light in a random direction regardless of the incident direction of the incident light without substantially changing the wavelength of the light transmitted through the first scattering pattern 353.

[0099] As the third base resin 3531 and the fourth base resin 3611, there is no particular limitation as long as it is a material with high light transmittance and excellent dispersion characteristics with respect to each of the scattered particles 3533, 3613. For example, each of the base resins 3531, 3611 may include an organic material such as an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0100] Similar to the light conversion pattern 350, the second scattering pattern 360 may also be arranged in a band shape. That is, the second scattering pattern 360 may be formed integrally along the pixel column boundary CL1.

[0101] The second scattering pattern 360 may overlap with the light shielding pattern 320 in the thickness direction. The second scattering pattern 360 may overlap with the light shielding pattern 320 at the pixel column boundary CL1. The width of the second scattering pattern 360 in the plane may be greater than the width of the light shielding pattern 320 in the plane. However, this is not limited thereto, and the width of the second scattering pattern 360 in the plane may be less than or equal to the width of the light shielding pattern 320 in the plane.

[0102] Specifically, the second scattering pattern 360 may be disposed between adjacent first and second regions and fill the space between the first light conversion pattern 351 and the second light conversion pattern 352. Further, as Figure 2 shown, the second scattering pattern 360 may be configured to extend to a partial region of the upper surfaces of the adjacent light conversion patterns 351, 352 and overlap with a part of the light conversion patterns 351, 352 in the thickness direction.

[0103] Furthermore, the second scattering pattern 360 may be formed to protrude more in the thickness direction than the surfaces of the respective light conversion patterns 351, 352.

[0104] The first scattering pattern 353 may include a flat portion 353a, a first overlapping portion 353b, and a second overlapping portion 353c.

[0105] The flat portions 353a of the first scattering pattern 353 may be arranged in a strip shape. Similar to the color filter 330, the flat portions 353a may be configured to be connected integrally along the column direction (second direction DR2). That is, the flat portions 353a may be disposed in the third column of the pixels.

[0106] In some embodiments, the flat portion 353a may be formed to have the same thickness as the thickness of the light conversion pattern 350.

[0107] The first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 may overlap at least a part of the region of the light shielding pattern 320 in the thickness direction. The first overlapping portion 353b and the second overlapping portion 353c may be formed integrally along the pixel column boundaries CL2, CL3. The width of the first overlapping portion 353b and the second overlapping portion 353c in the plane may be smaller than the width of the second scattering pattern 360 in the plane. According to an embodiment, the width of the first overlapping portion 353b and the second overlapping portion 353c in the plane may be equivalent to half of the width of the second scattering pattern 360 in the plane.

[0108] The first overlapping portion 353b may be configured to extend to a part of the upper surface of an adjacent second light conversion pattern 352 and overlap in the thickness direction, and may be formed to protrude more than the surface of the second light conversion pattern 352 in the thickness direction. The second overlapping portion 353c may be configured to extend to a part of the upper surface of an adjacent first light conversion pattern 351 and overlap in the thickness direction, and may be formed to protrude more than the surface of the first light conversion pattern 351 in the thickness direction.

[0109] As described above, the second scattering pattern 360 and the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 may be disposed at the boundaries of adjacent pixels, thereby improving the color mixing of light between the respective pixels PX1, PX2, PX3.

[0110] Refer to Figure 4Specifically, the blue light L1 emitted from each organic light-emitting element ED1, ED2, ED3 can travel in the upward direction of the corresponding pixels PX1, PX2, PX3 of the display device, or can travel in the lateral direction toward the adjacent pixels PX1, PX2, PX3. In this case, the light emitted from each organic light-emitting element ED1, ED2, ED3 is also provided to the light conversion patterns 351, 352 of the adjacent pixels and the first scattering pattern 353, which may cause the adjacent pixels to emit light due to leakage current undesirably.

[0111] However, in the display device 1 according to the present embodiment, the overlapping portions 353b, 353c of the second scattering pattern 360 and the first scattering pattern 353 are respectively arranged between the flat portions 353a of the adjacent light conversion patterns 351, 352 and the first scattering pattern 353 to fill the space between the flat portions 353a of the light conversion patterns 351, 352 and the first scattering pattern 353, and at the same time, they can be formed to protrude more in the thickness direction than the surfaces of the flat portions 353a of the respective light conversion patterns 351, 352 and the first scattering pattern 353.

[0112] As described above, the second scattering pattern 360 may include scattering particles 3613, and the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 may include scattering particles 3533.

[0113] Generally, the scattering particles can perform the function of scattering the incident light to uniformly control the emission angles of lights of different wavelengths. That is, the emission direction of the light passing through the scattering particles has random scattering characteristics, so the viewing angle characteristics of the display device can be improved.

[0114] On the contrary, the scattering particles can scatter the light in random directions regardless of the incident direction of the incident light, so at least a part of the incident light will be emitted in the direction opposite to the traveling path. For example, as Figure 4 shown, the light emitted from the organic light-emitting element ED1 can be incident on the left side of the second scattering pattern 360. In this case, assuming that the light passing through the scattering particles 3613 is emitted through 5 paths, the light emitted in the first emission direction OL1 and the second emission direction OL2 may not be incident on the second light conversion pattern 352. Similarly, due to the scattering particles 3613, 3533 included in the second scattering pattern 360 and the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353, at least a part of the light emitted from the other organic light-emitting elements ED2, ED3 will also be emitted in the direction opposite to the traveling path, and thus will not be incident on the adjacent light conversion pattern 350 or the first scattering pattern 353.

[0115] Therefore, it is possible to prevent light emitted from each of the organic light-emitting elements ED1, ED2, and ED3 from traveling in the lateral direction and reaching adjacent pixels PX1, PX2, and PX3. That is, it is possible to prevent a decrease in color purity caused by adjacent pixels PX1, PX2, and PX3.

[0116] Generally, a light-shielding member used to prevent color mixing of adjacent pixels can be formed to include at least one of an opaque series of organic substances, a chromium-containing metal substance, or carbon black. Therefore, light emitted from each of the organic light-emitting elements ED1, ED2, and ED3 is absorbed by the light-shielding member, and thus the amount of light incident on the wavelength conversion pattern may decrease. Therefore, in the case where the second scattering pattern 360 that does not include an opaque series of organic substances, etc. is used as the light-shielding member, the amount of light applied to the wavelength conversion pattern increases, and thus the wavelength conversion efficiency can be increased.

[0117] Figure 5 is a flowchart showing a method of manufacturing a first scattering pattern and a second scattering pattern according to an embodiment, Figure 6 and Figure 7 is a diagram showing a method of manufacturing a first scattering pattern 353 and a second scattering pattern 360 according to an embodiment.

[0118] Referring to Figures 5 to 7 , first, a light conversion pattern layer QD1, QD2 can be formed on a second substrate (S100). A cover layer CP can be formed on the light conversion pattern layer QD1, QD2 and the second substrate not covered by the light conversion pattern layer QD1, QD2.

[0119] Then, a photoresist can be coated on the cover layer CP covering the light conversion pattern layer QD1, QD2 (S101). The photoresist can be a photosensitive organic film PR. The upper surface of the photosensitive organic film PR can be formed to be substantially parallel to the upper surface of the cover layer CP. The photosensitive organic film PR can be formed to include at least one organic substance selected from, for example, benzo cyclo butene (BCB), polyimide (PI), poly amide (PA), acrylic resin, and phenolic resin.

[0120] The photosensitive organic film PR may include scattering particles. The scattering particles may be light-scattering particles. As the scattering particles, there is no particular limitation as long as it is a material that can scatter at least a part of the transmitted light. For example, it may be metal oxide particles or organic particles. As the metal oxide, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) etc. may be cited. As the material of the organic particles, acrylic resin or polyurethane resin etc. may be cited.

[0121] Then, in order to perform a semi-transmissive exposure process (for example, using a half-tone mask or a slit mask), a half-tone mask corresponding to the first scattering pattern and the second scattering pattern may be disposed on the photosensitive organic film PR (S102). Hereinafter, the case where the photosensitive organic film PR is formed using a photosensitive layer including a negative photosensitive material will be described as an example, but the present invention is not limited thereto, and in other embodiments, a photosensitive organic film PR may also be formed using a photosensitive layer including a positive photosensitive material. At this time, due to the half-tone mask or the slit mask, the area where the photosensitive organic film PR will be removed in the future, the area where the photosensitive organic film PR remains and the second scattering pattern 360 will be formed in the future, and the area where the photosensitive organic film PR remains and the first scattering pattern 353 will be formed in the future are respectively exposed to different degrees.

[0122] That is, the half-tone mask or the slit mask includes: a first light-transmitting portion Ma that allows 100% of the light to pass through; a second light-transmitting portion Mb that allows the light to pass through to a medium degree; and a third light-transmitting portion Mc that hardly allows the light to pass through. The half-tone mask or the slit mask may be respectively disposed such that: the first light-transmitting portion Ma is disposed in the area of the flat portion 353a of the first scattering pattern 353 where the photosensitive organic film PR remains and will be formed in the future; the second light-transmitting portion Mb is disposed in the area of the first overlapping portion 353b and the second overlapping portion 353c of the second scattering pattern 360 and the first scattering pattern 353 where the photosensitive organic film PR remains approximately half; and the third light-transmitting portion Mc is disposed in the area where the photosensitive organic film PR will be removed in the future. Among them, in the case where a positive photosensitive substance is used as the above-mentioned photosensitive organic film PR, the positions of the second light-transmitting portion Mb and the first light-transmitting portion Ma may be swapped with each other.

[0123] Next, irradiation light for a normal patterning process, such as UV ultraviolet rays or CW laser, can be irradiated from the upper part of the dimming mask device M, thereby performing exposure (S103).

[0124] Finally, a process of developing the photosensitive organic film PR that has been exposed can be performed (S104). As a result, for the portion that has been 100% exposed through the first light-transmitting portion Ma, through development, the photosensitive organic film PR remains as it is, thus having the form of the flat portion 353a of the first scattering pattern 353. In addition, for the portion where 100% of the light is blocked by the third light-transmitting portion Mc, the photosensitive organic film PR is removed, thereby exposing the covering layer CP. Further, in the region of the second light-transmitting portion Mb where light passes through moderately, the photosensitive organic film PR remains moderately, thereby forming the second scattering pattern 360 and the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353.

[0125] As a result, as Figure 7 shown, a structure in which the flat portion 353a of the first scattering pattern 353 corresponding to the light conversion patterns 351 and 352 and the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 corresponding to the second scattering pattern 360 are integrated can be formed. Specifically, the thickness H1 of the flat portion 353a of the first scattering pattern 353 can be about twice as thick as the thickness H2 of the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353. The thickness H2 of the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 can be the same as the thickness H3 of the second scattering pattern 360.

[0126] In the case of this embodiment, the problem of being complicated due to the existing use of two mask processes can be solved, one mask process can be reduced, and thereby the process for ashing or peeling the photoresist film can also be omitted.

[0127] Hereinafter, another embodiment will be described. In the following embodiment, the same reference numerals are used for the same structures as those in the embodiments already described, and the description thereof is omitted or simplified.

[0128] Figure 8 is a cross-sectional view of a display device according to another embodiment taken along the line II-II' of Figure 1 , and Figure 9 and Figure 10 is a diagram showing a method of manufacturing the second scattering pattern and the first scattering pattern according to another embodiment.

[0129] Refer to Figure 8, the structures of the first scattering pattern 353_1 and the second scattering pattern 360_1 of the display device 1_1 according to the present embodiment are different from Figure 2 the structures of the first scattering pattern 353 and the second scattering pattern 360 of the display device 1 shown, and the other structures are substantially the same or similar. Therefore, the following description will focus on the differences.

[0130] The first scattering pattern 353_1 and the second scattering pattern 360_1 of the present embodiment are different from Figure 2 the first scattering pattern 353 and the second scattering pattern 360 shown. The thickness H1_1 of the flat portion 353_1a of the first scattering pattern 353_1 is equal to the thickness H2_1 of the first overlapping portion 353_1b and the second overlapping portion 353_1c of the first scattering pattern 353_1.

[0131] In other words, Figure 8 the thickness H2_1 of the overlapping portion 353_1b of the first scattering pattern 353_1 and the thickness H3_1 of the second scattering pattern 360_1 shown can be about twice as thick as Figure 2 the thickness H2 of the first overlapping portion 353b and the second overlapping portion 353c of the first scattering pattern 353 and the thickness H3 of the second scattering pattern 360 shown.

[0132] Therefore, it is possible to further prevent the light emitted from each organic light-emitting element ED1, ED2, ED3 from traveling in the lateral direction and traveling to the adjacent pixels PX1, PX2, PX3. That is, it is possible to prevent color mixing between adjacent pixels and improve the color purity of the pixels.

[0133] As above, taking the case where Figure 8 the content of the scattering particles included in the first scattering pattern 353_1 and the second scattering pattern 360_1 shown is equal to Figure 2 the content of the scattering particles included in the first scattering pattern 353 and the second scattering pattern 360 shown as an example for explanation.

[0134] On the other hand, Figure 8 the content of the scattering particles included in the first scattering pattern 353_1 and the second scattering pattern 360_1 shown can be less than Figure 2 the content of the scattering particles included in the first scattering pattern 353 and the second scattering pattern 360 shown.

[0135] As described above, the thicker the overlapping portion of the first scattering pattern and the thickness of the second scattering pattern, the more it is possible to prevent the light emitted from each of the organic light-emitting elements ED1, ED2, and ED3 from traveling in the lateral direction and traveling to the adjacent pixels PX1, PX2, and PX3. However, on the other hand, the thicker the overlapping portion of the first scattering pattern and the thickness of the second scattering pattern, the lower the probability that the light emitted from each of the organic light-emitting elements ED1, ED2, and ED3 excites the wavelength conversion particles included in the first scattering pattern. Therefore, the content of the included scattering particles can be reduced in proportion to the increase in the thickness of the overlapping portion of the first scattering pattern and the thickness of the second scattering pattern.

[0136] Referring Figure 8 and Figure 10 , first, a photosensitive organic film PR is formed on the cover layer CP covering the light conversion pattern layers QD1 and QD2. The upper surface of the photosensitive organic film PR can be formed to be substantially parallel to the upper surface of the cover layer CP. The photosensitive organic film PR can be formed to include at least one organic substance selected from, for example, Benzo Cyclo Butene (BCB), polyimide (PI), polyamide (PA), acrylic resin, and phenolic resin.

[0137] The photosensitive organic film PR may include scattering particles. The scattering particles may be light-scattering particles. As the scattering particles, there is no particular limitation as long as it is a material that can scatter at least a part of the transmitted light. For example, it may be metal oxide particles or organic particles. As the metal oxide, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) etc. can be cited. As the material of the organic particles, acrylic resin or polyurethane resin etc. can be cited.

[0138] Then, an exposure process is performed. At this time, irradiation light for a normal patterning process, such as UV ultraviolet rays or CW laser, can be irradiated from above the dimming mask device M, thereby performing exposure.

[0139] Hereinafter, the case where the photosensitive organic film PR is formed using a photosensitive layer including a negative photosensitive material will be described as an example, but the present invention is not limited thereto. In other embodiments, the photosensitive organic film PR can also be formed using a photosensitive layer including a positive photosensitive material. At this time, the region where the photosensitive organic film PR remains and will form the first scattering pattern 353 and the second scattering pattern 360 through the first mask Ma, and the region where the photosensitive organic film PR will be removed through the third mask Mc are exposed to different degrees respectively.

[0140] That is, the mask includes a first light-transmitting portion Ma that allows 100% of light to pass through and a third light-transmitting portion Mc that hardly allows light to pass through. The mask can be correspondingly arranged such that the first light-transmitting portion Ma is arranged in the region where the photosensitive organic film PR remains and the first scattering pattern 353 and the second scattering pattern 360 will be formed in the future, and the third light-transmitting portion Mc is arranged in the region where the photosensitive organic film PR will be removed in the future. Among them, when a positive photosensitive material is used as the above-mentioned photosensitive organic film PR, the positions of the first light-transmitting portion Ma and the third light-transmitting portion Mc can be mutually swapped.

[0141] Thus, for the portion that is 100% exposed through the first light-transmitting portion Ma, through development, the photosensitive organic film PR remains as it is and has the form of the first scattering pattern 353 and the second scattering pattern 360. In addition, for the portion that is 100% blocked from light through the third light-transmitting portion Mc, the photosensitive organic film PR is removed, thereby exposing the cover layer CP.

[0142] As a result, as Figure 10 shown, a structure can be formed in which the flat portion 353_1a of the first scattering pattern 353_1 corresponding to the light conversion pattern 350 and the overlapping portion 353_1b of the first scattering pattern 353 corresponding to the second scattering pattern 360_1 are integrated. Specifically, the thickness H1_1 of the flat portion 353_1a of the first scattering pattern 353_1 can be the same as the thickness H2_1 of the overlapping portion 353_1b of the first scattering pattern 353_1. The thickness H2_1 of the overlapping portion 353_1b of the first scattering pattern 353_1 can be the same as the thickness H3_1 of the second scattering pattern 360_1.

[0143] In the case of this embodiment, the process can be implemented only by using the first mask Ma that allows light to completely pass through and the third mask Mc that completely blocks light, so that even when the size of the mask is larger than a specified size, uniform patterning can be achieved.

[0144] Figure 11 is a cross-sectional view of a display device according to another embodiment cut along the II-II' line of Figure 1 , and Figure 12 and Figure 13 is a diagram showing a method for manufacturing the first scattering pattern and the second scattering pattern according to an embodiment.

[0145] Referring to Figure 11 , in the display device 1_2 according to this embodiment, the structures of the first scattering pattern 353_2 and the second scattering pattern 360_2 are different from Figure 2The structures of the first scattering pattern 353 and the second scattering pattern 360 of the display device 1 shown are substantially the same or similar except for this. Therefore, the following description will focus on the differences.

[0146] Specifically, the first scattering pattern 353_2 and the second scattering pattern 360_2 of this embodiment are different from Figure 2 the first scattering pattern 353 and the second scattering pattern 360 shown. Compared with the thickness of the flat part 353_2a of the first scattering pattern 353_2, the thicknesses of the first overlapping part 353_2b and the second overlapping part 353_2c of the first scattering pattern 353_2 are thicker.

[0147] In other words, Figure 11 the thicknesses of the first overlapping part 353_2b and the second overlapping part 353_2c of the first scattering pattern 353_2 shown and the thickness of the second scattering pattern 360_2 can be respectively about 4 times thicker than Figure 2 the thicknesses of the first overlapping part 353b and the second overlapping part 353c of the first scattering pattern 353 shown and the thickness of the second scattering pattern 360.

[0148] Therefore, it is possible to further prevent the light emitted from each organic light-emitting element ED1, ED2, ED3 from traveling in the lateral direction and reaching the adjacent pixels PX1, PX2, PX3. That is, it is possible to prevent color mixing between adjacent pixels and improve the color purity of the pixels.

[0149] Above, Figure 11 the case where the thicknesses of the light conversion patterns 351, 352 and the first scattering pattern 353_2 shown are equal to Figure 2 the thicknesses of the light conversion patterns 351, 352 and the first scattering pattern 353 shown has been described as an example.

[0150] On the other hand, Figure 11 the wavelength conversion efficiency of the wavelength conversion particles included in the light conversion patterns 351, 352 shown can be superior to Figure 2 the wavelength conversion efficiency of the wavelength conversion particles included in the light conversion patterns 351, 352 shown. In this case, Figure 11 the thicknesses of the light conversion patterns 351, 352 shown can be thinner than Figure 2 the thicknesses of the light conversion patterns 351, 352 shown. That is, Figure 11 the overall height of the first scattering pattern 353_2 and the second scattering pattern 360_2 shown can be equal to Figure 2 or Figure 8 the overall height of the first scattering pattern 353 / 353_1 and the second scattering pattern 360 / 360_1 shown.

[0151] Refer toFigure 12 and Figure 13 , first, a photosensitive organic film PR_1 is formed on a cover layer CP covering the light conversion pattern layers QD1 and QD2. The upper surface of the photosensitive organic film PR_1 can be formed to be substantially parallel to the upper surface of the cover layer CP. At this time, when adjusting the amount of the photosensitive organic film PR_1 coated on the cover layer CP, the thicknesses of the first scattering pattern 353_2 and the second scattering pattern 360_2 can be adjusted. Taking the case where the thickness of the photosensitive organic film PR_1 shown in Figure 12 is about twice the thickness of the photosensitive organic film PR shown in Figure 6 as an example for explanation.

[0152] The photosensitive organic film PR_1 can be formed to include at least one organic substance selected from, for example, Benzo Cyclo Butene (BCB), polyimide (PI), polyamide (PA), acrylic resin, and phenolic resin.

[0153] The photosensitive organic film PR_1 can include scattering particles. The scattering particles can be light-scattering particles. As the scattering particles, there is no particular limitation as long as it is a material that can scatter at least a part of the transmitted light. For example, it can be metal oxide particles or organic particles. As the metal oxide, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) etc. can be cited. As the material of the organic particles, acrylic resin or polyurethane resin etc. can be cited.

[0154] Then, a semi-transmissive exposure process (for example, using a halftone mask or a slit mask) is performed. At this time, irradiation light for a normal patterning process, such as UV ultraviolet rays or CW laser, can be irradiated from the upper part of the dimming mask device M, thereby performing exposure.

[0155] Hereinafter, the case where the photosensitive organic film PR_1 is formed using a photosensitive layer including a negative photosensitive material is taken as an example for explanation. However, the present invention is not limited thereto. In other embodiments, the photosensitive organic film PR_1 can also be formed using a photosensitive layer including a positive photosensitive material. At this time, the areas where the photosensitive organic film PR_1 will be removed in the future and the areas where the photosensitive organic film PR_1 remains and will form the first scattering pattern 353_2 and the second scattering pattern 360_2 through the halftone mask or the slit mask are exposed to different degrees respectively.

[0156] That is, the halftone mask or slit mask includes a first light-transmitting portion Ma that allows 100% of light to pass through, a second light-transmitting portion Mb that allows light to pass through to a medium extent, and a third light-transmitting portion Mc that hardly allows light to pass through. The halftone mask or slit mask can be respectively arranged as follows: The first light-transmitting portion Ma is arranged in the regions of the overlapping portions 353_2b and 353_2c where the photosensitive organic film PR_1 remains and will form the second scattering pattern 360_2 and the first scattering pattern 353_2 in the future. The second light-transmitting portion Mb is arranged in the region of the flat portion 353_2a of the first scattering pattern 353_2 where the photosensitive organic film PR_1 remains approximately half. The third light-transmitting portion Mc is arranged in the region where the photosensitive organic film PR_1 will be removed in the future. Among them, when a positive photosensitive material is used as the above-mentioned photosensitive organic film PR_1, the positions of the first light-transmitting portion Ma and the second light-transmitting portion Mb can be interchanged with each other.

[0157] Thus, for the portion that is 100% exposed through the first light-transmitting portion Ma, through development, the photosensitive organic film PR_1 remains as it is and has the forms of the overlapping portions 353_2b and 353_2c of the first scattering pattern 353_2 and the second scattering pattern 360_2. In addition, for the portion where light is 100% blocked through the third light-transmitting portion Mc, the photosensitive organic film PR_1 is removed, thereby exposing the cover layer CP. Further, in the region of the second light-transmitting portion Mb where light passes through to a medium extent, the photosensitive organic film PR_1 remains to a medium extent, thereby forming the flat portion 353_2a of the first scattering pattern 353_2.

[0158] As a result, as Figure 13 shown, a structure can be formed in which the flat portion 353_2a of the first scattering pattern 353_2 corresponding to the light conversion patterns QD1 and QD2 and the first overlapping portion 353_2b and the second overlapping portion 353_2c of the first scattering pattern 353_2 corresponding to the second scattering pattern 360_2 are integrated. Specifically, the thickness H2_2 of the overlapping portion 353_2b of the first scattering pattern 353_2 can be about twice as thick as the thickness H1_2 of the flat portion 353_2a of the first scattering pattern 353_2. The thickness H2_2 of the first overlapping portion 353_2b and the second overlapping portion 353_2c of the first scattering pattern 353_2 can be equal to the thickness H3_2 of the second scattering pattern 360_2.

[0159] Figure 14 is a plan view showing the arrangement of each pixel of a display device according to another embodiment and the second scattering pattern and the first scattering pattern. Figure 15 is along Figure 14 a cross-sectional view of a display device according to an embodiment cut along the line IV-IV'.Figure 16 is a cross-sectional view of a display device according to an embodiment cut along the V-V' line of Figure 14 .

[0160] Referring to Figures 14 to 16 , the second scattering pattern 360_3 according to the present embodiment includes a third scattering pattern 361 disposed at pixel row boundaries RL1, RL2, RL3 and a fourth scattering pattern 360' disposed at pixel column boundaries CL1, CL2, CL3, which is different from the second scattering pattern 360 according to an embodiment shown in Figure 2 .

[0161] Specifically, in a plane, the third scattering pattern 361 may be disposed between adjacent fourth scattering patterns 360', or may be disposed between an adjacent fourth scattering pattern 360' and first overlapping portions 353b and second overlapping portions 353c of the first scattering pattern 353.

[0162] The third scattering pattern 361 may include substantially the same material as the fourth scattering pattern 360'.

[0163] The third scattering pattern 361 may be disposed on the first light conversion pattern 351 and the second light conversion pattern 352. The width of the third scattering pattern 361 in a plane may be smaller than the widths of the first light conversion pattern 351 and the second light conversion pattern 352 in a plane. The third scattering pattern 361 is disposed on the first light conversion pattern 351 and the second light conversion pattern 352 extending along the column direction (second direction DR2), and its surface may substantially have a curved surface shape.

[0164] Each third scattering pattern 361 may be directly connected in contact with an end portion of an adjacent fourth scattering pattern 360' midway along the extension of each pixel column boundary CL1, CL2, CL3.

[0165] That is, each third scattering pattern 361 may be connected by gathering with adjacent fourth scattering patterns 360' on both sides, or may be connected by gathering with an overlapping portion of an adjacent fourth scattering pattern 360' and the first scattering pattern 353. Thus, in a plane, the second scattering pattern 360_3 may have a lattice shape in which the fourth scattering pattern 360' and the third scattering pattern 361 are connected integrally and disposed along the pixel row boundary RL and the pixel column boundary CL.

[0166] The third scattering pattern 361 and the fourth scattering pattern 360' may respectively have maximum protrusion thicknesses TPa and TP based on the surfaces of the light conversion patterns 351 and 352.

[0167] On the other hand, the fourth scattering pattern 360' can be formed by a photolithography process. That is, a photosensitive organic film PR_2 is formed on the second substrate 310 on which the first light conversion pattern 351 and the second light conversion pattern 352 are disposed. The photosensitive organic film PR_2 can be formed to include at least one organic substance selected from, for example, Benzo Cyclo Butene (BCB), polyimide (PI), polyamide (PA), acrylic resin, and phenolic resin.

[0168] The photosensitive organic film PR_2 can include scattering particles. The scattering particles can be light-scattering particles. As the scattering particles, there is no particular limitation as long as it is a material that can scatter at least a part of the transmitted light. For example, it can be metal oxide particles or organic particles. As the metal oxide, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) etc. can be cited. As the material of the organic particles, acrylic resin or polyurethane resin etc. can be cited.

[0169] As described above, a surface height difference is formed between the region where the light conversion patterns 351 and 352 are disposed and the region where the light conversion patterns 351 and 352 are not disposed, so that the surface height of the first scattering pattern material layer in the region where the light conversion patterns 351 and 352 are disposed can be higher than the surface height in the region where the light conversion patterns 351 and 352 are not disposed. That is, the surface height of the first scattering pattern material layer forming the third scattering pattern 361 can be higher than the surface height of the first scattering pattern material layer forming the fourth scattering pattern 360'. Of course, although a part of the first scattering pattern material layer disposed on the light conversion patterns 351 and 352 will flow to the adjacent region (the region where the light conversion patterns 351 and 352 are not disposed), and thus its surface height will decrease, it is still higher than the surface height of the first scattering pattern material layer located in the region where the light conversion patterns 351 and 352 are not disposed.

[0170] As described above, after the bonding process, in order to prevent damage caused by contact and / or collision between the second scattering pattern 360_3 and the light-providing substrate 100, the filling material 70 maintains the minimum thickness between the surface of the second scattering pattern 360_3 and the light-providing substrate 100. When the surface height of the first scattering pattern material layer forming the third scattering pattern 361 is higher than the surface height of the first scattering pattern material layer forming the fourth scattering pattern 360′, in order to maintain the minimum thickness between the surface of the third scattering pattern 361 with a surface height higher than that of the fourth scattering pattern 360′ and the light-providing substrate 100, the overall thickness of the filling material 70 may increase. This will cause a hindrance to the light transmittance of the display device 1_3.

[0171] In this embodiment, by using a dimming mask device M that can adjust the surface height according to the region of the second scattering pattern 360_3, the surface heights of the fourth scattering pattern 360′ and the third scattering pattern 361 can be adjusted to be the same with reference to the surfaces of the light conversion patterns 351 and 352. Refer to Figures 17 to 12 , and an explanation will be given for this.

[0172] Figures 16 to 17 FIG. is a diagram showing a method of manufacturing a second scattering pattern according to an embodiment.

[0173] Refer to Figures 16 to 18 , and the second scattering pattern 360_3 according to this embodiment can be formed by a dimming mask device M whose thickness can be adjusted according to the region. The dimming mask device M can be a halftone mask or a slit mask. Hereinafter, an example in which a halftone mask is applied will be mainly described.

[0174] Refer to Figure 17 , the dimming mask device M is disposed on the photosensitive organic film PR_2, and a height difference caused by the presence or absence of the light conversion patterns 351 and 352 is formed on the photosensitive organic film PR_2.

[0175] On the other hand, the photosensitive organic film PR_2 may include a negative photosensitive material (Negative PR). However, it is not limited thereto, and the photosensitive organic film PR_2 may include a positive photosensitive material (Positive PR). Hereinafter, an example in which the photosensitive organic film PR_2 includes a negative photosensitive material (Negative PR) will be mainly described.

[0176] The dimming mask device M may include a first light-transmitting portion Ma that allows 100% of the light to pass through, a second light-transmitting portion Mb that allows the light to pass through to a medium extent, and a third light-transmitting portion Mc that hardly allows the light to pass through. As Figure 17As shown, on the photosensitive organic film PR_2 disposed on the second light conversion pattern 352, the second light-transmitting portion Mb of the dimming mask device M is disposed, and on the photosensitive organic film PR_2 where the second light conversion pattern 352 is not disposed, the first light-transmitting portion Ma of the dimming mask device M may be disposed. Among them, when a positive photosensitive material is used as the above-mentioned photosensitive organic film PR_2, the positions of the above-mentioned second light-transmitting portion Mb and the first light-transmitting portion Ma may be mutually interchanged.

[0177] Next, irradiation light for a normal patterning process, such as UV ultraviolet rays or CW laser, is irradiated from above the dimming mask device M.

[0178] In the region where the first light-transmitting portion Ma of the dimming mask device M is disposed, the irradiation light can pass through the first light-transmitting portion Ma as it is and irradiate the photosensitive organic film PR_2. In the region where the second light-transmitting portion Mb of the dimming mask device M is disposed, at least a part of the irradiation light passes through the second light-transmitting portion Mb and irradiates the photosensitive organic film PR_2.

[0179] Therefore, for the portion that is 100% exposed through the first light-transmitting portion Ma, the photosensitive organic film PR_2 remains as it is through development and has the form of the fourth scattering pattern 360'. In addition, in the region of the second light-transmitting portion Mb where light passes through moderately, the photosensitive organic film PR_2 remains moderately and forms the third scattering pattern 361.

[0180] Thus, referring to Figures 16 to 18 , as Figure 18 shown, in the final structure, the difference in the surface protrusion heights TP and TPa between the fourth scattering pattern 360' disposed below the first light-transmitting portion Ma and the third scattering pattern 361 disposed below the second light-transmitting portion Mb may be between about 0.8 μm and about 1.2 μm. From the viewpoint of preventing the increase in the thickness of the above-mentioned filling material 70, it is preferable that the surface protrusion heights TP and TPa of the two are substantially the same.

[0181] Therefore, as Figure 16 shown, the filling material 70 has the same minimum thicknesses TH1 and TH2 in the regions where the fourth scattering pattern 360' and the third scattering pattern 361 are disposed, thereby preventing the unnecessary reduction in light transmittance caused by the increase in the thickness of the filling material 70 in the region overlapping with the third scattering pattern 361.

[0182] Referring to Figure 14 and Figure 15 , a filling material 70 is formed on the second base substrate 310 where the third scattering pattern 361 is disposed. The filling material 70 may be disposed on the entire surface of the second base substrate 310.

[0183] On the other hand, the fourth scattering pattern 360' disposed along the pixel row boundaries RL1, RL2, RL3 and the pixel column boundaries CL1, CL2, CL3 can function to guide the traveling direction of the flow of the filling material 70. That is, the fourth scattering pattern 360' can guide the traveling direction of the flow of the filling material 70 along the column direction of the pixels, and the third scattering pattern 361 can guide the traveling direction of the flow of the filling material 70 along the row direction of the pixels.

[0184] Accordingly, the filling material 70 can also travel along the row direction of the pixels and be evenly spread over the pixels PX1, PX2, PX3. Therefore, the third scattering pattern 361 can improve the unfilled defect of the filling material 70.

[0185] Furthermore, similar to the fourth scattering pattern 360', the third scattering pattern 361 can also perform the following function, that is, when performing the bonding process of the light-providing substrate 100 and the light-converting substrate 300, maintaining the gap between the light-providing substrate 100 and the light-converting substrate 300, and preventing in advance the situation of damage caused by the contact and / or collision of the two.

[0186] As described above, embodiments of the present invention have been described with reference to the drawings. However, those skilled in the art can understand that the present invention can be implemented in other specific manners without changing the technical idea or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and should not be construed as restrictive.

Claims

1. A light conversion substrate, comprising: A first substrate, comprising a first region, a second region, and a third region; A first color filter, disposed on the first region and comprising a first colorant; A second color filter, disposed on the second region and comprising a second colorant different from the first colorant; A first light conversion pattern, disposed on the first region and comprising first wavelength conversion particles; A second light conversion pattern, disposed on the second region separately from the first light conversion pattern and comprising second wavelength conversion particles; And A first scattering pattern, disposed on the third region to fill the space between the first light conversion pattern and the second light conversion pattern and comprising scattering particles, The first color filter overlaps with the first light conversion pattern, The second color filter overlaps with the second light conversion pattern, The first scattering pattern overlaps with a part of the first light conversion pattern and a part of the second light conversion pattern, and The first scattering pattern overlaps with the first color filter and the second color filter.

2. The light conversion substrate according to claim 1, wherein The first scattering pattern comprises: a flat portion; a first overlapping portion extending from one side of the flat portion and overlapping with the second light conversion pattern; and a second overlapping portion extending from the other side of the flat portion and overlapping with the first light conversion pattern.

3. The light conversion substrate according to claim 2, wherein The thicknesses of the first overlapping portion and the second overlapping portion are thicker than the thickness of the flat portion.

4. The light conversion substrate according to claim 1, further comprising: A cover layer, disposed above the first light conversion pattern and the second light conversion pattern and between the first substrate and the first scattering pattern.

5. The light conversion substrate according to claim 2, further comprising: A second scattering pattern, disposed between the first region and the second region to fill the space between the first light conversion pattern and the second light conversion pattern and overlapping with a part of the first light conversion pattern and a part of the second light conversion pattern.

6. The light conversion substrate according to claim 5, wherein The first light conversion pattern, the second light conversion pattern, and the first scattering pattern are in a strip shape extending along the column direction on a plane.

7. The light conversion substrate according to claim 5, wherein The first scattering pattern and the second scattering pattern comprise the same scattering particles.

8. The light conversion substrate according to claim 5, wherein The maximum thickness of the second scattering pattern is thicker than the maximum thickness of the first light conversion pattern and thicker than the maximum thickness of the second light conversion pattern.

9. The light conversion substrate according to claim 1, wherein The first light conversion pattern and the second light conversion pattern respectively further comprise the same scattering particles as the scattering particles in the first scattering pattern.

10. The light conversion substrate according to claim 1, wherein The size of the first wavelength conversion particles is larger than the size of the second wavelength conversion particles.

11. The light conversion substrate according to claim 6, wherein The first region, the second region, and the third region include a plurality of pixels along the column direction and a row direction intersecting the column direction. The light conversion substrate further includes: a third scattering pattern disposed above the first light conversion pattern and the second light conversion pattern along the row boundaries of the plurality of pixels, and disposed between the first overlapping portion and the second scattering pattern and between the second overlapping portion and the second scattering pattern.

12. The light conversion substrate according to claim 11, wherein the thicknesses of the first overlapping portion, the second overlapping portion, the second scattering pattern, and the third scattering pattern are the same.

13. A display device, comprising: a light conversion substrate and a light providing substrate disposed opposite to each other, including a first pixel region, a second pixel region, and a third pixel region, the light conversion substrate includes: a first substrate; a first color filter disposed on the first pixel region and including a first colorant; a second color filter disposed on the second pixel region and including a second colorant different from the first colorant; a first light conversion pattern disposed on the first pixel region and including first wavelength conversion particles; a second light conversion pattern disposed separately from the first light conversion pattern on the second pixel region and including second wavelength conversion particles; and a first scattering pattern disposed on the third pixel region to fill a space between the first light conversion pattern and the second light conversion pattern and including scattering particles, the light providing substrate includes: a first light emitting region overlapping with the first light conversion pattern; a second light emitting region overlapping with the second light conversion pattern; and a third light emitting region overlapping with the first scattering pattern, the first color filter overlaps with the first light conversion pattern, the second color filter overlaps with the second light conversion pattern, the first scattering pattern overlaps with a part of the first light conversion pattern and a part of the second light conversion pattern, and the first scattering pattern overlaps with the first color filter and the second color filter.

14. The display device according to claim 13, further comprising: a second scattering pattern disposed between the first pixel region and the second pixel region to fill a space between the first light conversion pattern and the second light conversion pattern and overlapping with a part of the first light conversion pattern and a part of the second light conversion pattern.

15. The display device according to claim 14, wherein the first scattering pattern and the second scattering pattern include the same scattering particles.

16. The display device according to claim 13, wherein the first light emitting region to the third light emitting region emit light of a first color, the first light conversion pattern converts the light of the first color into light of a second color and outputs it, and the second light conversion pattern converts the light of the first color into light of a third color and outputs it.

17. The display device according to claim 13, further comprising: The filling material is disposed between the light conversion substrate and the light providing substrate.

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