Inspection jigs and inspection devices

Abstract

The present invention provides an inspection jig and an inspection device, which can prevent the pressure contact force of a probe on an electrode of an inspection object from becoming too high and can appropriately remove the oxide film on the surface of the electrode. The inspection jig of the present invention comprises: a rod-shaped probe (Pr), having an end (Pa) conductively connected to an inspection point (101) of an inspection object (100), a main body (Pc) connected to the end (Pa), and another end (Pb) connected to the main body (Pc); and a support member (31) supporting the probe (Pr), the probe having a locking portion, the locking portion being able to be engaged and disengaged with an abutment portion provided on the support member, the locking portion being configured such that when the probe is used for inspection, when a compressive load of a certain value or more acts in the axial direction of the probe, the locking portion is disengaged from the abutment portion.

Description

[0001] This application is based on Japanese patent application No. 2018-133737 filed on July 31, 2018, the contents of which are incorporated herein by reference. Technical Field

[0002] The present invention relates to an inspection jig and an inspection device for inspecting an inspection object. Background Art

[0003] Conventionally, inspection of an inspection object is performed by bringing multiple needle-shaped probes into contact with inspection points of an inspection object such as a semiconductor chip or a substrate on which circuits or wiring are formed, and applying an electrical signal between the probes or measuring the voltage between the probes. When bringing multiple probes into contact with the inspection points in this way, the probes may bend and come into contact with adjacent probes.

[0004] Therefore, there is known an inspection jig (probe unit) comprising the following probe: the probe comprises a needle tip portion, a needle middle portion continuous with the needle tip portion, and a needle rear portion continuous with the needle middle portion, the needle tip portion, the needle middle portion, and the needle rear portion respectively having a plate-like region, and when viewed from the front end side or the rear end side of the needle, the width direction of the plate-like region of the needle tip portion and the needle rear portion is set to an angle of approximately 90 degrees relative to the width direction of the plate-like region of the needle middle portion (for example, refer to patent document 1).

[0005] Patent document 1 states that: the orientation of each probe is determined by inserting the needle tip and the plate-like area at the rear of the needle into a slit, and the bending direction of the probe is controlled by using the plate-like area in the middle of the needle; the probes can be arranged at a narrow interval by elastically deforming adjacent probes in the same direction when overdrive occurs; and the oxide film formed on the electrode surface of the object to be inspected can be removed by elastically deforming the plate-like area to slide the needle tip along the electrode surface.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2001-74779 Summary of the invention

[0009] However, even if the probe tip is slid along the electrode surface as in the inspection jig described in Patent Document 1, it is difficult to properly remove the oxide film on the electrode surface if the pressure contact force of the probe on the electrode surface of the inspection object is insufficient. Therefore, it is necessary to ensure sufficient pressure contact force of the probe on the electrode, but if the pressure contact force becomes too high, it may have an adverse effect on the inspection object.

[0010] An object of the present invention is to provide an inspection jig and an inspection device which can suppress the pressure contact force of a probe to an electrode of an inspection object from becoming too high and can appropriately remove an oxide film on the surface of the electrode.

[0011] The inspection jig of the present invention comprises: a rod-shaped probe having one end conductively connected to an inspection point of an inspection object, a main body connected to the one end, and another end connected to the main body; and a support component supporting the probe, wherein the probe has a locking portion that can be engaged and disengaged with an abutment portion provided on the support component, and the locking portion is configured such that when the probe is used for inspection, when a compressive load of a certain value or more acts in the axial direction of the probe, the locking portion disengages from the abutment portion.

[0012] Furthermore, an inspection device of the present invention includes the inspection jig, and the inspection device inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a conceptual diagram schematically showing the configuration of a semiconductor inspection apparatus including the inspection jig according to the first embodiment of the present invention.

[0014] Figure 2 This is a side view showing an example of a probe provided on a testing jig.

[0015] Figure 3 yes Figure 2 Cross-sectional view along line III-III.

[0016] Figure 4 It is a cross-sectional view showing the structure of an inspection section provided in the inspection device.

[0017] Figure 5 It is a cross-sectional view showing the structure of an inspection jig provided in the inspection section.

[0018] Figure 6 It is a cross-sectional view showing an initial stage of inspection using a probe.

[0019] Figure 7 It is a cross-sectional view showing a later stage of inspection using a probe.

[0020] Figure 8 It is a graph showing the relationship between the compressive deformation amount and the compressive stress of the probe.

[0021] Fig. 9 It is a cross-sectional view showing the structure of an inspection jig according to a second embodiment of the present invention.

[0022] Fig.10It is a cross-sectional view showing a modified example of the inspection jig according to the second embodiment of the present invention.

[0023] Fig.11 It is a cross-sectional view showing the structure of an inspection jig according to a third embodiment of the present invention.

[0024] Fig.12 It is a cross-sectional view showing a later stage of the inspection in the third embodiment.

[0025] Fig.13 It is a cross-sectional view showing the structure of an inspection jig according to a fourth embodiment of the present invention.

[0026] Fig.14 It is a cross-sectional view showing a later stage of inspection in the fourth embodiment of the inspection jig.

[0027] [Explanation of Symbols]

[0028] 1: Semiconductor inspection equipment (inspection equipment)

[0029] 3, 3a, 3b, 3c, 3d: Inspection fixture

[0030] 4: Inspection Department

[0031] 6: Sample table

[0032] 6a: Loading section

[0033] 8: Inspection and processing department

[0034] 31: Support components

[0035] 32: First support plate

[0036] 33: Second support plate

[0037] 34: The third support plate

[0038] 35: First pitch transformation block

[0039] 36: Second pitch transformation block

[0040] 37: Connecting plate

[0041] 38: Connecting parts

[0042] 100: Semiconductor wafer (inspection object)

[0043] 101: Checkpoint

[0044] 321: First support hole

[0045] 322, 342: Contact part

[0046] 331: Second support hole

[0047] 341: The third support hole

[0048] 351, 361: Wiring

[0049] 352, 362: Electrode

[0050] A, E: Pressing force

[0051] A1, B, C: Compression load

[0052] A2: Push-up load

[0053] B1, B2: reaction force

[0054] D: Caliber

[0055] d: diameter

[0056] da, db: outer diameter

[0057] F1: Facing faces

[0058] F2: Back

[0059] K: Sloping line

[0060] Pa: one end

[0061] Pa2: Circumference

[0062] Pb: The other end

[0063] Pc: Main body

[0064] Pd: protrusion (stopping part)

[0065] Pd1: Stop surface

[0066] Pd2: Inclined surface

[0067] Pe, Pfa: Large diameter part

[0068] Pe1, Pe2, Pg1: Stepped part (locking part)

[0069] Pf, Pfb: small diameter part

[0070] Pg: concave portion

[0071] Ph: Bending part (stopping part)

[0072] Ph1: upper surface

[0073] Pj: Anti-slip part

[0074] Pr, Pra, Prb, Prc, Prd: probes

[0075] s: protrusion

[0076] T1: Moment

[0077] t, W: width dimension

[0078] V: Vertical line

[0079] θ: specified angle

[0080] σ: compressive stress

[0081] σ1, σ2: stress lines DETAILED DESCRIPTION

[0082] Hereinafter, embodiments of the present invention will be described based on the drawings. Note that components with the same reference numerals in the drawings represent the same components, and description thereof will be omitted.

[0083] (First Embodiment)

[0084] Figure 1 This is a conceptual diagram schematically showing the configuration of a semiconductor inspection apparatus 1 including an inspection jig 3 according to the first embodiment of the present invention. Figure 1 The semiconductor inspection apparatus 1 shown corresponds to an example of the inspection apparatus of the present invention, and inspects a circuit formed on a semiconductor wafer 100 which is an example of an inspection target object.

[0085] Circuits corresponding to a plurality of semiconductor chips are formed on a semiconductor substrate such as silicon on the semiconductor wafer 100. The inspection object may be an electronic component such as a semiconductor chip, a chip size package (CSP), a semiconductor element (IC: Integrated Circuit), or other items that are subject to electrical inspection.

[0086] In addition, the inspection device is not limited to the semiconductor inspection device 1, and may be, for example, a substrate inspection device for inspecting a substrate. The substrate to be inspected may be, for example, a printed wiring substrate, a glass epoxy substrate, a flexible substrate, a ceramic multilayer wiring substrate, a packaging substrate for semiconductor packaging, an interposer substrate, a film carrier, or an electrode plate for a display such as a liquid crystal display, an electroluminescence (EL) display, a touch screen display, or an electrode plate for touch screens, and may be various substrates.

[0087] Figure 1 The semiconductor inspection apparatus 1 shown includes an inspection unit 4, a sample stage 6, and an inspection processing unit 8. A placement unit 6a is provided on the upper surface of the sample stage 6, and the placement unit 6a places and fixes the semiconductor wafer 100 at a predetermined position.

[0088] The loading portion 6a is, for example, configured to be supported so as to be able to be raised and lowered, so that the semiconductor wafer 100 accommodated in the sample stage 6 can be raised to the inspection position, and the inspected semiconductor wafer 100 can be stored in the sample stage 6. In addition, the loading portion 6a has a rotating mechanism, which can, for example, rotate the semiconductor wafer 100 and make the orientation flat face a predetermined direction. In addition, the semiconductor inspection device 1 includes a transport mechanism, which includes a robot (not shown) that can load the semiconductor wafer 100 on the loading portion 6a, or carry out the inspected semiconductor wafer 100 from the loading portion 6a.

[0089] The inspection unit 4 includes an inspection jig 3, a first pitch changing block 35, a second pitch changing block 36, and a connection plate 37. The inspection jig 3 is a jig for inspecting by bringing a plurality of probes Pr into contact with the semiconductor wafer 100, and is configured as a so-called probe card, for example.

[0090] A plurality of chips are formed on the semiconductor wafer 100. Inspection points such as electrodes, wiring patterns, solder bumps, and connection terminals are provided on each chip. The inspection jig 3 holds a plurality of probes Pr, which are arranged to contact a portion of the plurality of chips formed on the semiconductor wafer 100 (e.g., Figure 1 The inspection areas (inspection areas shown with hatched lines) are arranged in a manner corresponding to each inspection point.

[0091] When the probe Pr is brought into contact with each inspection point in the inspection area and the inspection in the inspection area is completed, the semiconductor wafer 100 is lowered together with the mounting portion 6a, and the sample stage 6 is moved parallel to move the inspection area. Then, the mounting portion 6a raises the semiconductor wafer 100 and brings the probe Pr into contact with a new inspection area for inspection. In this way, by moving the inspection area sequentially while performing the inspection, the entire semiconductor wafer 100 is inspected.

[0092] Furthermore, Figure 1 This is an explanatory diagram that briefly and conceptually shows an example of the configuration of a semiconductor inspection device 1 from the perspective of easy understanding of the invention, and the number, density, and arrangement of the probes Pr, or the shapes and size ratios of the various parts of the inspection section 4 and the sample stage 6 are also described in a simplified and conceptual manner. For example, from the perspective of easy understanding of the arrangement of the probes Pr, the inspection area is enlarged and emphasized compared to a conventional semiconductor inspection device, and the inspection area may be smaller or larger.

[0093] The connection plate 37 is provided with a plurality of electrodes (not shown) connected to the second pitch conversion block 36. Each electrode of the connection plate 37 is electrically connected to the inspection processing unit 8, for example, via a cable or a connection terminal (not shown). The first pitch conversion block 35 and the second pitch conversion block 36 are pitch conversion components for converting the interval between the probes Pr to the electrode pitch of the connection plate 37.

[0094] As described later, the inspection jig 3 is provided with: a plurality of probes Pr having one end Pa conductively connected to the inspection point of the inspection object, the other end Pb, and a main body Pc; and a support member 31 for holding each probe Pr in a state where the one end Pa of each probe Pr is directed toward the semiconductor wafer 100. The inspection jig 3 is configured to be replaceable according to the semiconductor wafer 100 as the inspection object.

[0095] The first pitch conversion block 35 has an electrode 352 (described later) that is in contact with and electrically connected to the other end Pb of each probe Pr. The inspection unit 4 includes a connection circuit (not shown) that electrically connects each probe Pr of the inspection jig 3 to the inspection processing unit 8 via the connection board 37, the second pitch conversion block 36, and the first pitch conversion block 35, or switches the connection.

[0096] The support member 31 includes a first support plate 32 disposed so as to face the semiconductor wafer 100, a second support plate 33 disposed so as to face the first pitch changing block 35, and a third support plate 34 disposed between the first support plate 32 and the second support plate 33. The first support plate 32, the second support plate 33, and the third support plate 34 are connected by a connecting member 38 while being disposed in parallel with each other at a predetermined distance.

[0097] As described later, support holes are formed in the first support plate 32, the second support plate 33, and the third support plate 34, and the support holes include a plurality of insertion holes for supporting the probes Pr. The support holes of the first support plate 32 are arranged at positions corresponding to inspection points set on the wiring pattern of the semiconductor wafer 100 as the inspection object. Thus, one end Pa of the probe Pr can contact the inspection point of the semiconductor wafer 100.

[0098] Figure 2 1 is a side view showing an example of a probe Pr provided on an inspection jig. Figure 3 yes Figure 2 The probe Pr has one end Pa whose front end is formed into a conical shape with a narrowed front end, a main body Pc connected to the one end Pa, and another end Pb connected to the main body Pc. The probe Pr is formed of a conductive metal material and has an overall shape that is roughly rod-shaped.

[0099] The main body Pc of the probe Pr is provided with a protrusion Pd which protrudes in the radial direction of the probe Pr by forging the middle part of the axial direction of the probe Pr from the side, etc. The protrusion Pd is formed into a triangle having a stopper surface Pd1 and an inclined surface Pd2, wherein the stopper surface Pd1 extends in the radial direction of the main body Pc, and the inclined surface Pd2 extends from the front end of the stopper surface Pd1 toward the peripheral surface of the main body Pc located on the side of one end Pa of the probe Pr and narrows at the front end.

[0100] The other end Pb of the probe Pr is provided with an anti-slip portion Pj, and the anti-slip portion Pj includes a pair of left and right bulges or a disc-shaped flange portion for preventing the probe Pr from falling off as described later. Furthermore, the cross-sectional shape of the probe Pr is not limited to a circle, but may also be a square or an ellipse. In addition, the front end of one end Pa is not limited to a conical shape with a narrowed front end, but may also be a spherical shape, or a so-called crown shape with a plurality of protrusions, and may be set to various shapes. In the illustration, the front end of the other end Pb is formed as a flat surface, but is not limited to this, and may also be a conical shape, a spherical shape, or a crown shape.

[0101] The length of the probe Pr is, for example, 3.0 mm to 8.0 mm, and the diameter d of the probe Pr is, for example, 30 μm to 100 μm, or 50 μm to 65 μm. The lengths of one end Pa and the other end Pb of the probe Pr are, for example, 0.8 mm to 1.6 mm, or 0.3 mm to 0.6 mm.

[0102] The preferred value of the protrusion amount s of the protrusion Pd formed on the main body Pc is 0.3 to 0.5 times the diameter d of the probe Pr. The preferred value of the width dimension t of the protrusion Pd is 0.3 to 0.5 times the diameter d of the probe Pr.

[0103] Figure 4 is a cross-sectional view showing the structure of the inspection unit 4 provided in the semiconductor inspection device 1. Figure 5 4 is a cross-sectional view showing an example of the structure of the inspection jig 3 provided in the inspection section 4. Figure 4 , the inspection jig 3 and the first pitch conversion block 35 are shown in a state where they are separated.

[0104] lie in Figure 4 and Figure 5 The first support plate 32 below has a facing surface F1 disposed facing the semiconductor wafer 100. Figure 4 and Figure 5 The second support plate 33 above has a back surface F2 that is in close contact with the lower surface of the first pitch conversion block 35.

[0105] On the lower surface of the first pitch conversion block 35 disposed above the first support plate 32, a plurality of electrodes 352 are provided at positions corresponding to the other end portions Pb of each probe Pr supported by the support member 31. On the other hand, on the upper surface of the first pitch conversion block 35, a plurality of electrodes are provided with a larger interval than the electrodes 352 on the lower surface. Furthermore, the electrodes 352 on the lower surface side of the first pitch conversion block 35 are connected to the electrodes on the upper surface side by wiring 351.

[0106] On the lower surface of the second pitch conversion block 36 disposed above the first pitch conversion block 35, a plurality of electrodes are provided at positions corresponding to the electrodes disposed on the upper surface of the first pitch conversion block 35. On the other hand, on the upper surface of the second pitch conversion block 36, a plurality of electrodes 362 are provided at positions corresponding to the electrodes disposed on the connection plate 37. The electrodes on the lower surface of the second pitch conversion block 36 are connected to the electrodes 362 on the upper surface via wiring 361.

[0107] The inspection jig 3 , the first pitch conversion block 35 , and the second pitch conversion block 36 are assembled, and the second pitch conversion block 36 is mounted on the lower surface of the connection plate 37 , thereby forming the inspection section 4 for inputting and outputting signals between the inspection processing section 8 and each probe Pr.

[0108] The first pitch conversion block 35 and the second pitch conversion block 36 can be formed by using a multi-layer wiring substrate such as a multi-layer organic board (Multi-Layer Organic, MLO) or a multi-layer ceramic board (Multi-Layer Ceramic, MLC).

[0109] like Figure 5 As shown, a first support hole 321 is formed on the first support plate 32 of the inspection jig 3, and the first support hole 321 includes a plurality of insertion holes for inserting and supporting one end Pa of the probe Pr. Each of the first support holes 321 is arranged at a position facing each inspection point 101 provided on the semiconductor wafer 100 while supporting one end Pa of the probe Pr.

[0110] One end Pa of the probe Pr is provided with its tip protruding a predetermined distance from the facing surface F1 of the first support plate 32. During the inspection described below, the tip of the one end Pa abuts against the inspection point 101 of the inspection object including the semiconductor wafer 100 and is electrically connected to each other.

[0111] The second support plate 33 is located Figure 5The upper surface of the probe Pr becomes the back surface F2 facing the first pitch conversion block 35. The second support plate 33 is formed with a second support hole 331, and the second support hole 331 includes a plurality of insertion holes for the other end Pb of the probe Pr to be inserted and supported. The other end Pb of the probe Pr is supported in a state of being inserted into the second support hole 331.

[0112] In addition, the anti-detachment portion Pj of the probe Pr is disposed on the upper side of the back surface F2 of the second support plate 33. Thus, the other end Pb of the probe Pr is prevented from being sunken into the second support hole 331 of the second support plate 33 and falling off, and the vertex of the other end Pb is supported in a state of protruding from the back surface F2 of the second support plate 33. Moreover, the vertex of the other end Pb is pressed against the electrode 352 of the first pitch conversion block 35, and they are electrically connected to each other.

[0113] In addition, a third support hole 341 is formed in the third support plate 34 disposed between the first support plate 32 and the second support plate 33. The third support hole 341 includes a plurality of insertion holes through which the main body Pc of the probe Pr is inserted and supported. The diameter D of the third support hole 341 is set to be greater than the value d+s obtained by adding the diameter d of the probe Pr and the protrusion amount s of the protrusion Pd (see Figure 3 ) slightly larger value.

[0114] The probe Pr is supported by the support member 31 in a state where the protrusion Pd is disposed below the third support hole 341. In addition, in the initial stage of the inspection described later, the stop surface Pd1 of the protrusion Pd abuts against the abutment portion 342 of the peripheral wall located at the lower part including the third support hole 341, thereby restricting the upward movement of the protrusion Pd. In addition, when a compressive load of a certain value or more acts on the axial direction of the probe Pr, the protrusion Pd is configured to be able to detach from the abutment portion 342 and sink into the third support hole 341.

[0115] The first support plate 32, the second support plate 33 and the third support plate 34 are provided with corresponding first support holes 321, second support holes 331 and third support holes 341. Figure 5 The probes Pr are arranged in a manner of being slightly offset one by one in the left-right direction, that is, in the direction orthogonal to the axial direction of each probe Pr. Thus, the probes Pr are arranged along an inclined line K, which is inclined at a predetermined angle θ relative to a vertical line V extending in a vertical direction to the facing surface F1 of the first support plate 32 and the back surface F2 of the second support plate 33.

[0116] Furthermore, the probe Pr may be inserted into the corresponding first support hole 321, second support hole 331 and third support hole 341 while the corresponding first support hole 321, second support hole 331 and third support hole 341 are located on the vertical line V. Then, the first support plate 32, the second support plate 33 and the third support plate 34 are placed on the vertical line V. Figure 5The first supporting holes 321, the second supporting holes 331 and the third supporting holes 341 are relatively shifted in the left-right direction so that the first supporting holes 321, the second supporting holes 331 and the third supporting holes 341 are offset from each other, thereby allowing the probe Pr to be set along the inclined line K.

[0117] exist Figure 5 In the illustrated embodiment, an example is shown in which one end Pa of each probe Pr supported by the first support plate 32 is supported in a state of being in contact with the inspection point 101 of the semiconductor wafer 100. Instead of the above configuration, a configuration may be adopted in which each probe Pr is supported by the support member 31 in a state in which one end Pa of each probe Pr is separated from the inspection point 101 of the semiconductor wafer 100 by a predetermined distance.

[0118] Figure 6 is a cross-sectional view showing an initial stage of inspection using the probe Pr, Figure 7 is a cross-sectional view showing a later stage of inspection using the probe Pr, Figure 8 It is a graph showing the relationship between the compressive deformation amount λ and the compressive stress σ of the probe Pr.

[0119] exist Figure 6 In the initial stage of the inspection shown, the semiconductor wafer 100 placed on the sample stage is driven upward so that the inspection point 101 is pressed against one end Pa of the probe Pr with a predetermined pressing force A. According to the pressing force A, a compression load A1 that compresses the one end Pa of the probe Pr in the axial direction and an upward push load A2 that pushes the one end Pa of the probe Pr obliquely upward act.

[0120] One end Pa of the probe Pr is compressed in the axial direction according to the compression load A1, thereby elastically deforming. In addition, according to the push-up load A2, the peripheral surface Pa2 of the one end Pa is pressed against the abutment portion 322 of the lower peripheral wall including the first support hole 321, and the one end Pa of the probe Pr is elastically deformed in a curved arc shape with the abutment portion 322 as a fulcrum.

[0121] Furthermore, according to the compressive load B transmitted from the one end Pa of the probe Pr to the setting portion of the protrusion Pd, the stopper surface Pd1 including the upper surface of the protrusion Pd is pressed against the abutment portion 342 of the third support hole 341, thereby restricting the protrusion Pd from moving upward. As a result, the one end side portion of the probe Pr including the one end Pa of the probe Pr and the main body Pc located below the protrusion Pd is compressed in the axial direction according to the compressive load B, thereby elastically deforming, and generating a compressive stress σ at the one end side portion of the probe Pr.

[0122] In addition, a reaction force B1 which is opposite to the compressive load B and which presses the protrusion Pd downward to restrict its upward movement and a reaction force B2 which restricts the protrusion Pd from moving sideways to the middle of the probe Pr in the vertical direction acts. Figure 6 The reaction force B2 presses the protrusion Pd in ​​the left direction. The middle part of the probe Pr in the vertical direction is pressed to the side by the reaction force B2, thereby elastically deforming the probe Pr so that the inclination angle becomes smaller than the original inclination line K.

[0123] As the inspection proceeds, the inspection point 101 of the semiconductor wafer 100 is gradually driven upward, thereby Figure 8 As shown in FIG. 1 , the compressive deformation amount λ of the one end side portion of the probe Pr gradually increases. The compressive stress σ generated in the one end side portion of the probe Pr increases in proportion to the increase in the compressive deformation amount λ.

[0124] In the initial stage of inspection, the compressive load B acts concentratedly on one end side of the probe Pr, so the compressive stress σ generated in the probe Pr changes along the steeply angled stress line σ1, and the compressive stress σ generated in the one end side of the probe Pr rises sharply only when the compressive deformation λ increases slightly. Therefore, the pressing force between the one end Pa of the probe Pr and the inspection point 101 of the semiconductor wafer 100 can be fully ensured, and the oxide film on the electrode surface located at the inspection point 101 can be removed.

[0125] When the compressive load B acting on the one end side portion of the probe Pr further increases, the reaction force B2 pressing the protrusion Pd of the probe Pr to the side gradually increases accordingly, so that the axial middle portion of the probe Pr is deformed in such a way that the inclination angle gradually decreases. Figure 7 As shown, when the axial middle portion of the probe Pr is deformed to be substantially vertical, the protrusion Pd of the probe Pr is separated from the contact portion 342 of the third support plate 34 and is sunk into the third support hole 341. As a result, the engagement between the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr is released.

[0126] As described above, when the locking state of the protrusion Pd by the contact portion 342 of the third support plate 34 is released, the compressive load C equivalent to the one end side portion of the probe Pr is also transmitted to the other end side portion of the probe Pr located on the upper side of the third support plate 34, that is, the main body Pc located on the upper side of the protrusion Pd and the other end Pb of the probe Pr. As a result, the compressive load is dispersed over the entire length of the probe Pr, and a substantially uniform compressive stress σ is generated throughout the entire probe Pr.

[0127] The results, such as Figure 8As shown, at the time T1 when the engagement between the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr is released, the inclination angle of the stress line σ2 indicating the rate of change of the compressive stress σ generated in the probe Pr becomes smaller than that in the initial stage of the inspection. Therefore, in the later stage of the inspection, the pressing force of the probe Pr on the inspection point 101 of the semiconductor wafer 100 does not increase sharply, and the occurrence of disadvantages caused by the excessively high pressing force can be suppressed.

[0128] Furthermore, if Figure 7 As shown, according to the compressive load C transmitted to the other end side portion of the probe Pr, the other end Pb of the probe Pr is pressed against the lower surface of the first pitch conversion block 35, thereby, the pressing force E that restricts the other end Pb of the probe Pr from moving upward is applied to the vertex of the other end Pb. According to the pressing force E, the other end side portion of the probe Pr, that is, the main body Pc located on the upper side of the protrusion Pd and the other end Pb of the probe Pr are elastically deformed in a shape that is point-symmetrical with the one end side portion of the probe Pr and bent into an arc shape, so that the entire probe Pr including the one end side portion and the other end side portion of the probe Pr is deformed in a roughly S-shaped shape.

[0129] As described above, in the inspection jig 3 including a roughly rod-shaped probe Pr and a support member 31 supporting the probe Pr, and an inspection device including the inspection jig 3, a locking portion including a protrusion Pd that can be engaged and disengaged with a contact portion 342 of the support member 31 is provided on the probe Pr, thereby preventing the pressing force of the probe Pr on the electrode provided at the inspection point 101 from becoming too high, and sufficiently ensuring the pressing force of the probe Pr on the electrode surface to remove the oxide film on the electrode surface. The probe Pr has an end Pa that is conductively connected to the inspection point 101 of the inspection object, a main body Pc connected to the one end Pa, and another end Pb connected to the main body Pc.

[0130] That is, in the first embodiment, a third support hole 341 for inserting and supporting the main body Pc of the probe Pr is formed in the third support plate 34 disposed between the first support plate 32 supporting the one end Pa of the probe Pr and the second support plate 33 supporting the other end Pb of the probe Pr. Furthermore, a protrusion Pd formed by protruding a part of the main body Pc in the radial direction of the probe Pr is provided at a position below the third support hole 341, and a diameter D of the third support hole 341 is set to a value slightly larger than a value (d+s) obtained by adding the diameter d of the probe Pr and the protrusion amount s of the protrusion Pd.

[0131] According to the above configuration, in the initial stage of inspection when the compressive load B acting on one end side portion of the probe Pr is small, the locking portion including the protrusion Pd of the probe Pr abuts and locks with the abutment portion 342 including the lower peripheral wall of the third support hole 341. In addition, in the later stage of inspection when the compressive load B of the probe Pr becomes equal to or greater than a predetermined value, the main body Pc of the probe Pr is elastically deformed to allow the protrusion Pd to sink into the third support hole 341, thereby releasing the engagement between the protrusion Pd and the abutment portion 342.

[0132] Therefore, in the initial stage of the inspection, the compressive load B acts intensively on the one end side portion of the probe Pr including the one end Pa of the probe Pr and the portion of the main body Pc located below the protrusion Pd, and mainly only the one end side portion of the probe Pr is elastically deformed and generates a compressive deformation amount λ. Figure 8 As shown by the stress line σ1 shown, the compressive stress σ generated at one end side of the probe Pr can be increased sharply in proportion to the compressive deformation λ, thereby fully ensuring the pressing force of the probe Pr on the electrode surface set at the inspection point 101 of the inspection object and effectively removing the oxide film on the electrode surface.

[0133] In addition, in the later stage of the inspection, at the time T1 when the engagement between the protrusion Pd of the probe Pr and the contact portion 342 of the third support plate 34 is released, the compressive load acting on the probe Pr can be evenly dispersed over the entire length of the probe Pr. Therefore, as shown by the stress line σ2, the rate of change of the compressive stress σ that increases corresponding to the increase in the compressive deformation λ of the probe Pr is significantly reduced, which has the advantage of being able to effectively suppress the pressure contact force of the probe Pr on the inspection point 101 of the inspection object from becoming too high.

[0134] As described above, the first embodiment is configured such that the locking portion (protrusion Pd) of the probe Pr is locked to an abutment portion provided on the support component 31 of the probe Pr in a manner that allows it to be engaged and disengaged, specifically, to an abutment portion 342 including the lower peripheral wall of the third support hole 341 formed on the third support plate 34. Alternatively, the first embodiment may be replaced by the following configuration: an independent locking plate that can engage and disengage the locking portion of the probe Pr is provided on the support component 31.

[0135] However, as shown in the first embodiment, when the lower peripheral wall of the third support hole 341 formed on the third support plate 34 supporting the main body Pc of the probe Pr is used to form the abutment portion 342 that can be engaged and disengaged to stop the protrusion Pd of the probe Pr, the third support plate 34 constituting the support member 31 can have both the function of supporting the main body Pc of the probe Pr and the function of engaging and disengaging to stop the protrusion Pd of the probe Pr. Therefore, there are the following advantages: the probe Pr can be stably supported with a simple structure, the oxide film on the surface of the electrode provided at the inspection point 101 can be appropriately removed, and the pressing force of the probe Pr on the electrode can be suppressed from becoming too high.

[0136] Furthermore, for example, the following configuration may be adopted: the third support plate 34 is omitted, and a locking portion including a protrusion provided at one end Pa of the probe Pr is engaged and disengaged with a contact portion including a lower peripheral wall of the first support hole 321 formed in the first support plate 32. However, in the above configuration, the compressive stress σ of the probe Pr increases sharply in the initial stage of the inspection, and the pressing force of the probe Pr on the electrode surface of the inspection object may become too high.

[0137] In addition, the locking portion including the protrusion provided near the other end Pb of the probe Pr may be engaged and disengaged with the abutment portion 342 including the lower peripheral wall of the second support hole 331 formed in the second support plate 33. However, in the above-described configuration, the compressive stress σ of the probe Pr rises slowly in the initial stage of the inspection, so that the pressing force of the probe Pr on the electrode surface of the inspection object cannot be sufficiently ensured, and it is difficult to appropriately remove the oxide film on the electrode surface.

[0138] Therefore, it is desirable to have the following configuration: as shown in the first embodiment, a protrusion Pd is provided on the main body Pc of the probe Pr, and the protrusion Pd is engaged and disengaged with the abutment portion 342 of the lower peripheral wall including the third support hole 341. Thus, in the initial stage of the inspection, the pressing force of the probe Pr on the electrode surface of the inspection object can be sufficiently ensured, and in the later stage of the inspection, by releasing the engagement between the locking portion of the probe Pr and the abutment portion 342 of the support member 31 at an appropriate time, the pressing force of the probe Pr on the inspection object can be effectively prevented from becoming too high.

[0139] In addition, when the protrusion Pd formed by making a part of the probe Pr protrude in the radial direction constitutes a locking portion that can be engaged and disengaged with the abutment portion, in the initial stage of inspection when the compressive load B acting on the one end side portion of the probe Pr is small, the protrusion Pd of the probe Pr is locked to the abutment portion and the compressive load is concentrated on the one end side portion of the probe Pr, thereby effectively removing the oxide film on the electrode surface. In addition, there is the following advantage: in the later stage of inspection when the compressive load B of the probe Pr becomes more than a specified value, the probe Pr is elastically deformed and the engagement of the protrusion Pd and the abutment portion is easily released, thereby effectively preventing the pressure contact force of the probe on the inspection object from becoming too high with a simple structure.

[0140] Furthermore, the protrusion Pd formed on the probe Pr is not necessarily in the above-mentioned triangular shape, and may be changed to various shapes such as a semicircular shape, a trapezoidal shape, or a rectangular shape.

[0141] However, as shown in the first embodiment, when the protrusion Pd formed on the probe Pr is formed into a triangular shape having a stopper surface Pd1 extending radially along the main body Pc and a narrowed inclined surface Pd2 extending from the front end of the stopper surface Pd1 toward one end side of the probe Pr, when the support member 31 supports the probe Pr, the protrusion Pd can be easily moved downward to the third support plate 34 by sliding the inclined surface Pd2 along the wall surface of the third support hole 341, etc.

[0142] In addition, in the early stages of the inspection, such as Figure 6 As shown, by making the stop surface Pd1 of the protrusion Pd contact and stop with the contact portion 342 of the lower peripheral wall including the third support hole 341, the compressive load can be concentrated on the end side of the probe Pr. In addition, there is the following advantage: after the inspection is completed, if the semiconductor wafer 100 is allowed to self- Figure 7 When the raised position shown in the figure drops and the pressing force A pressing one end Pa of the probe Pr upward is released, the inclined surface Pd2 slides along the wall surface of the third support hole 341 according to the restoring force of the probe Pr, thereby enabling the protrusion Pd to move smoothly downward to the third support plate 34.

[0143] (Second Embodiment)

[0144] Fig. 9 2 is a cross-sectional view showing the structure of a testing jig 3a according to a second embodiment of the present invention. Fig.10 It is a cross-sectional view showing a modified example 3b of the inspection jig.

[0145] Set at Fig. 9The probe Pra of the inspection jig 3a shown has a large diameter portion Pe with a large radial dimension and a small diameter portion Pf with a small radial dimension located above the large diameter portion Pe. The large diameter portion Pe of the probe Pra is easily formed by, for example, coating an acrylic resin or Teflon (registered trademark) on the axial middle portion of the probe Pra, or by electrodepositing a ring-shaped component by Ni electroforming.

[0146] The outer diameter da of the large diameter portion Pe is set to a value slightly smaller than the diameter D of the third support hole 341, and is supported in a state of being located below the third support hole 341. As a result, the step portion Pe1 formed between the large diameter portion Pe and the small diameter portion Pf abuts against, for example, the abutment portion 342 of the lower peripheral wall of the third support hole 341, and is engaged and disengaged.

[0147] That is, in the initial stage of inspection using the probe Pra, the step portion Pe1 abuts against the lower peripheral wall (abutment portion 342) of the third support hole 341, thereby limiting the upward movement of the step portion Pe1. Moreover, when the axial compressive load B acting on the probe Pra becomes greater than a certain value, the probe Pra is elastically deformed according to the reaction force B2 acting on the step portion Pe1 of the probe Pra, so that the stopper including the step portion Pe1 is immersed in the third support hole 341. As a result, the engagement between the stopper portion (step portion Pe1) of the probe Pra and the abutment portion 342 of the support member 31 can be released.

[0148] Therefore, in the initial stage of the inspection using the probe Pra, by sufficiently ensuring the pressing force of the probe Pra on the inspection point 101, the oxide film on the electrode surface of the inspection point 101 can be appropriately removed. In addition, in the later stage of the inspection using the probe Pra, the pressing force of the probe Pra on the inspection point 101 of the inspection object including the semiconductor wafer 100 can be suppressed from becoming too high.

[0149] On the other hand, Fig.10 In the modified example 3b of the inspection jig shown, a probe Prb is provided, and the probe Prb has a large diameter portion Pfa formed continuously from the axial middle portion of the main body Pc to one end Pa, and a small diameter portion Pfb formed continuously from the axial middle portion of the main body Pc to the other end Pb. For example, by cutting a rod-shaped body having a predetermined outer diameter, or inserting a rod-shaped body constituting the small diameter portion Pfb into a cylindrical body constituting the large diameter portion Pfa, etc., it is possible to easily form a probe Prb having a large diameter portion Pfa and a small diameter portion Pfb with appropriate rigidity.

[0150] Moreover, by setting the outer diameter db of the large diameter portion Pfa to a value slightly smaller than the diameter D of the third support hole 341, in the initial stage of inspection using the probe Prb, the step portion Pe2 formed between the large diameter portion Pfa and the small diameter portion Pfb abuts against the lower peripheral wall (abutment portion 342) of the third support hole 341, thereby limiting the upward movement of the step portion Pe2. In addition, when the axial compressive load B acting on the probe Prb becomes greater than a certain value, the probe Prb is elastically deformed according to the reaction force B2 acting on the step portion Pe2 of the probe Prb, thereby causing the step portion Pe2 to sink into the third support hole 341. As a result, the engagement between the locking portion (step portion Pe2) of the probe Prb and the abutment portion 342 of the support member 31 can be released.

[0151] Therefore, in the initial stage of the inspection using the probe Prb, by sufficiently ensuring the pressing force of the probe Prb on the inspection point 101, the oxide film on the electrode surface of the inspection point 101 can be appropriately removed. In addition, in the later stage of the inspection using the probe Prb, the pressing force of the probe Prb on the inspection point 101 of the inspection object including the semiconductor wafer 100 can be effectively suppressed from becoming too high.

[0152] (Third Embodiment)

[0153] Fig.11 2 is a cross-sectional view showing the structure of a test jig 3c according to a third embodiment of the present invention. Fig.12 It is a cross-sectional view showing a third embodiment of the inspection jig 3c at a later stage of inspection.

[0154] The probe Prc provided on the inspection jig 3c has a concave portion Pg in which a portion of its axial direction is concave in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the diameter d of the probe Prc. Fig.11 As shown in the figure, the axial middle portion of the probe Prc is supported by the third support plate 34 in a state where the peripheral wall portion of the third support hole 341 is fitted into the recessed portion Pg of the probe Prc.

[0155] According to the above configuration, in the initial stage of inspection when the axial compressive load B acting on the probe Prc is small, the step portion Pg1 formed between the recessed portion Pg and the peripheral surface of the probe Prc, i.e., the step portion Pg2 formed between the recessed portion Pg and the peripheral surface of the probe Prc, Fig.11The side wall of the concave portion Pg on the lower side of the third support hole 341 abuts against the abutment portion 342 of the lower peripheral wall including the third support hole 341, thereby limiting the upward movement of the concave portion Pg. Moreover, when the axial compressive load B acting on the probe Prc becomes greater than a certain value, the probe Prc is elastically deformed according to the reaction force B2 acting on the step portion Pg1 of the probe Prc, thereby separating the stopper portion of the probe Prc including the step portion Pg1 from the abutment portion 342. As a result, the engagement between the stopper portion (step portion Pg1) of the probe Prc and the abutment portion 342 can be released.

[0156] Therefore, in the early stage of the inspection using the probe Prc, by sufficiently ensuring the pressing force of the probe Prc on the inspection point 101, the oxide film on the electrode surface located at the inspection point 101 can be properly removed. In addition, in the later stage of the inspection using the probe Prc, the pressing force of the probe Prc on the inspection point 101 of the inspection object including the semiconductor wafer 100 can be effectively suppressed from becoming too high.

[0157] (Fourth Embodiment)

[0158] Fig.13 2 is a cross-sectional view showing the structure of an inspection jig 3d according to a fourth embodiment of the present invention. Fig.14 It is a cross-sectional view showing the inspection jig 3d in the fourth embodiment at a later stage of inspection.

[0159] The probe Prd provided on the inspection jig 3d has a bent portion Ph in which a part of its axial direction is bent in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the width dimension W of the bent portion Ph. Moreover, the upper surface Ph1 of the locking portion including the bent portion Ph is configured to be engaged and disengaged with, for example, the abutment portion 342 of the lower peripheral wall including the third support hole 341.

[0160] In the early stages of inspection using probe Prd, such as Fig.13 As shown, the upper surface Ph1 of the curved portion Ph abuts against the lower peripheral wall (abutment portion 342) of the third support hole 341, thereby limiting the upward movement of the curved portion Ph. In addition, when the probe Prd is used for inspection, when a compressive load B of a certain value or more acts in the axial direction of the probe Prd, as shown in FIG. Fig.14 As shown, by elastically deforming the probe Prd, the curved portion Ph can be sunk into the third support hole 341. Thus, the locking portion including the curved portion Ph is separated from the contact portion 342, and the engagement between the locking portion of the probe Prd and the contact portion 342 of the support member 31 can be released.

[0161] Therefore, in the initial stage of the inspection using the probe Prd, by sufficiently ensuring the pressing force of the probe Prd on the inspection point 101, the oxide film on the electrode surface of the inspection point 101 can be appropriately removed. In addition, in the later stage of the inspection using the probe Prd, the pressing force of the probe Prd on the inspection point 101 of the inspection object including the semiconductor wafer 100 can be effectively suppressed from becoming too high.

[0162] That is, the inspection jig of the present invention includes: a roughly rod-shaped probe, having one end conductively connected to an inspection point of an inspection object, a main body connected to the one end, and the other end connected to the main body; and a support component that supports the probe, the probe having a locking portion that can be engaged and disengaged with an abutment portion provided on the support component, and the locking portion is configured such that when the probe is used for inspection, when a compressive load of a certain value or more acts in the axial direction of the probe, the locking portion disengages from the abutment portion.

[0163] According to the configuration, in the initial stage of inspection when the compressive load acting on the side portion of one end of the probe is small, the stopper of the probe is stopped by the abutment portion of the support component, and the compressive load acts on the side portion of one end of the probe. Therefore, the pressing force of the probe on the electrode surface set at the inspection point of the inspection object can be fully ensured, and the oxide film on the electrode surface can be properly removed. In addition, in the later stage of inspection when the compressive load of the probe becomes above a specified value, the engagement of the stopper with the abutment portion of the support component is released by elastically deforming the probe, so that the compressive load acting on the probe can be evenly dispersed over the entire length of the probe. Therefore, there is an advantage that the pressing force of the probe on the inspection object can be effectively suppressed from becoming too high.

[0164] In addition, it is preferred that the supporting component is configured to include a supporting plate, the supporting plate is formed with a supporting hole for the probe to be inserted and supported, the locking portion is locked by abutting against the abutting portion of the peripheral wall including the supporting hole, and the locking portion is released from the engagement with the abutting portion by sinking into the supporting hole.

[0165] According to the above structure, the support plate constituting the support member can have both the function of supporting the probe and the function of the locking portion that can lock the probe in a detachable manner. Therefore, it has the following advantages: the probe can be stably supported with a simple structure, the oxide film on the surface of the electrode provided at the inspection point can be appropriately removed, and the pressing force of the probe on the electrode can be suppressed from becoming too high.

[0166] In addition, preferably, the support component includes a first support plate supporting one end of the probe, a second support plate supporting the other end of the probe, and a third support plate supporting the main body of the probe, and the abutment portion includes a peripheral wall of a third support hole formed in the third support plate.

[0167] According to the above configuration, in the initial stage of the inspection using the probe, the locking portion of the probe is detachably locked to the abutment portion provided on the third support plate, so that the main body of the probe generates appropriate compressive stress, and the pressing force of the probe on the electrode surface of the inspection object can be fully ensured. In addition, it has the following advantages: in the later stage of the inspection, by releasing the engagement between the locking portion of the probe and the abutment portion of the support member at an appropriate time, the pressing force of the probe on the inspection object can be effectively prevented from becoming too high.

[0168] Furthermore, it is preferable that the locking portion is constituted by a protrusion formed by making a part of the probe protrude in a radial direction of the probe.

[0169] According to the above configuration, in the initial stage of inspection when the compressive load acting on one end side portion of the probe is small, the protrusion of the probe is locked on the abutment portion and the compressive load is concentrated on the one end side portion of the probe, thereby appropriately removing the oxide film on the electrode surface. In addition, in the later stage of inspection when the compressive load of the probe becomes more than a specified value, the probe is elastically deformed to easily release the engagement of the locking portion and the abutment portion, thereby effectively preventing the pressure contact force of the probe on the inspection object from becoming too high with a simple configuration.

[0170] In addition, it is preferred that the protrusion is formed into a triangular shape having a locking surface and an inclined surface, the locking surface extending in the radial direction of the probe, the inclined surface extending from the front end of the locking surface toward one end side of the probe and narrowing at the front end, and the locking surface can be engaged and disengaged by abutting against the abutment portion.

[0171] According to the above configuration, when the support member supports the probe, the protrusion of the probe can be easily moved to the bottom of the support plate by sliding the inclined surface along the wall of the support hole. This has the following advantages: after the inspection is completed, the protrusion of the probe can be smoothly moved to the bottom of the support plate by sliding the inclined surface along the wall of the support hole according to the restoring force of the probe.

[0172] Furthermore, the probe may include a large diameter portion having a large radial dimension and a small diameter portion having a small radial dimension, and the locking portion may include a step portion formed between the large diameter portion and the small diameter portion.

[0173] According to the above configuration, in the initial stage of inspection using the probe, the step portion is brought into contact with the contact portion of the support member, thereby limiting the upward movement of the step portion, etc. Furthermore, when the compressive load acting in the axial direction of the probe becomes greater than a certain value, the probe is elastically deformed to cause the step portion to sink into the support hole, etc., thereby releasing the engagement between the step portion and the contact portion of the support member.

[0174] Furthermore, it is preferable that the large diameter portion includes a bulging portion formed in a part of the main body portion.

[0175] According to the above configuration, the probe having the large diameter portion can be easily formed by, for example, coating an acrylic resin or Teflon (registered trademark) on the axial middle portion of the probe or electrodepositing a ring-shaped member by Ni electroforming.

[0176] Furthermore, the large diameter portion may be formed continuously from an axial middle portion of the main body portion to the one end portion, and the small diameter portion may be formed continuously from an axial middle portion of the main body portion to the other end portion.

[0177] According to the above configuration, a probe having a large diameter portion and a small diameter portion having appropriate rigidity can be easily formed by cutting the rod-shaped body or inserting the rod-shaped body constituting the small diameter portion into the cylindrical body constituting the large diameter portion.

[0178] Furthermore, the probe may include a recessed portion in which a portion of the axial direction of the probe is recessed in the radial direction, and the locking portion may include a step portion formed between the recessed portion and a peripheral surface of the probe.

[0179] According to the above configuration, in the initial stage of inspection when the axial compressive load acting on the probe is small, the step portion formed between the recessed portion and the peripheral surface of the probe abuts against the abutment portion of the lower peripheral wall including the support hole, thereby restricting the upward movement of the stopper including the step portion, etc. Furthermore, when the axial compressive load acting on the probe becomes greater than a certain value, the stopper including the step portion of the probe is separated from the abutment portion by elastically deforming the probe, thereby releasing the engagement between the stopper of the probe and the abutment portion of the support member.

[0180] Furthermore, the probe may include a bent portion formed by bending a portion of the probe in the axial direction in the radial direction, and the locking portion may be formed by the bent portion.

[0181] According to the above configuration, in the initial stage of inspection using the probe, the stopper including the upper surface of the curved portion and the like are brought into contact with the contact portion including the lower peripheral wall of the support hole, so that the stopper can be restricted from moving upward, etc. In addition, when a compressive load of a certain value or more acts in the axial direction of the probe, the curved portion of the probe is elastically deformed, so that the curved portion of the probe is sunk into the support hole, etc., thereby separating the curved portion from the contact portion, thereby releasing the engagement between the curved portion of the probe and the contact portion of the support member.

[0182] Furthermore, an inspection device of the present invention includes the inspection jig, and the inspection device inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

[0183] According to the above configuration, in the initial stage of inspection using the inspection device, the pressure contact force of the probe on the electrode surface provided at the inspection point of the inspection object can be sufficiently ensured, thereby appropriately removing the oxide film on the electrode surface. In addition, there is the following advantage: in the later stage of inspection when the compression load of the probe becomes more than a specified value, the compression load acting on the probe is evenly distributed over the entire length of the probe, thereby effectively preventing the pressure contact force of the probe on the inspection object from becoming too high.

[0184] The inspection jig and the inspection device having such a configuration can suppress the pressure contact force of the probes on the electrodes of the inspection object from becoming too high, and can remove the oxide film on the surface of the electrodes.

[0185] Furthermore, the specific embodiments or examples in the section of the specific embodiments are merely to clarify the technical contents of the present invention, and the present invention should not be limited to such specific examples and should not be narrowly interpreted.

Claims

1. An inspection jig, characterized in that: include: A rod-shaped probe having one end conductively connected to an inspection point of an inspection object, a main body connected to the one end, and another end connected to the main body; and a supporting member, supporting the probe, The probe has a locking portion that can be engaged with and disengaged from a contact portion provided on the support member. The supporting member includes a first supporting plate and a second supporting plate. The first support plate supports one end of the probe, The second support plate supports the other end of the probe, The probe is arranged along an inclined line, and the inclined line is inclined at a predetermined angle with respect to a vertical line extending in a vertical direction between the facing surface of the first support plate and the back surface of the second support plate. The locking portion is formed by a protrusion formed by making a part of the probe protrude in the radial direction of the probe, and the protrusion protrudes in the inclination direction of the probe, and the portion of the probe where the protrusion is provided is inclined in the inclination direction of the probe, The locking portion is configured to be disengaged from the contact portion when a compressive load of a certain value or more acts in the axial direction of the probe during inspection using the probe.

2. The inspection jig according to claim 1, characterized in that: The support member has a support hole, the locking portion is locked by abutting against the abutment portion including a peripheral wall of the support hole, and the locking portion is released from engagement with the abutment portion by sinking into the support hole.

3. The inspection jig according to claim 2, characterized in that: The supporting member has a third supporting plate supporting the main body of the probe, The abutting portion includes a peripheral wall of a third supporting hole formed in the third supporting plate.

4. The inspection jig according to claim 2, characterized in that: The protrusion is formed into a triangular shape having a stop surface and an inclined surface, wherein the stop surface extends in the radial direction of the probe, and the inclined surface extends from the front end of the stop surface toward one end side of the probe and narrows at the front end. The locking surface is locked in a disengageable manner by abutting against the abutting portion.

5. The inspection jig according to claim 1, characterized in that: The probe has a large diameter portion with a large radial dimension and a small diameter portion with a small radial dimension. The locking portion includes a step portion formed between the large diameter portion and the small diameter portion.

6. The inspection jig according to claim 5, characterized in that: The large diameter portion includes a bulging portion formed in a portion of the main body portion.

7. The inspection jig according to claim 5, characterized in that: The large diameter portion is formed continuously from the axial middle portion of the main body portion to the one end portion. The small diameter portion is formed continuously from an axial middle portion of the main body portion to the other end portion.

8. The inspection jig according to claim 2, characterized in that: The probe has a concave portion that makes a portion of the axial direction of the probe concave in the radial direction. The locking portion includes a step portion formed between the recessed portion and a peripheral surface of the probe.

9. The inspection jig according to claim 1, characterized in that: The probe has a curved portion that curves a portion of the axial direction of the probe in a radial direction. The locking portion includes the bent portion.

10. An inspection device, characterized in that: The inspection device comprises the inspection jig according to any one of claims 1 to 9, wherein the inspection device inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

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