Antenna packaging structure and packaging method

Abstract

The present invention provides an antenna packaging structure and a packaging method. The packaging method includes: providing a support substrate, forming a redistribution layer, a first antenna layer, a first metal feedthrough pillar, a first packaging layer, a second antenna layer, a second metal feedthrough pillar, a second packaging layer, a third antenna layer, a semiconductor chip, metal bumps, and a third packaging layer. The present invention protects the semiconductor chip based on the third packaging layer, encapsulates the chip and the metal bumps simultaneously, can effectively improve the stability of the packaging structure, forms the metal bumps after opening holes in the packaging layer first, simplifies the process, is beneficial to the preparation of the metal bumps, forms a multi-layer antenna structure through multi-layer metal feedthrough pillars and multi-layer packaging layers, reduces the packaging size, enhances the signal receiving ability, expands the signal receiving bandwidth, forms a bottom filling layer, improves the packaging stability, adds a dam dispensing process, improves the stability of the chip, provides double protection for the chip, and can effectively reduce the packaging process flow and improve the process cycle.

Description

Technical Field

[0001] The present invention belongs to the fields of packaging and communication devices, and particularly relates to an antenna packaging structure and a packaging method. Background Art

[0002] Due to the progress of technology, various high-tech electronic products have been developed to facilitate people's lives, including various electronic devices such as notebook computers, mobile phones, tablet computers (PADs), etc.

[0003] With the popularization of these high-tech electronic products and the increasing demands of people, in addition to the significant increase in various functions and applications configured in these high-tech products, especially the wireless communication function has been added to meet people's mobile needs. Thus, people can use these high-tech electronic products at any place or at any time through these high-tech electronic devices with wireless communication functions. This has greatly increased the flexibility and convenience of using these high-tech electronic products. Therefore, people no longer have to be confined to a fixed area, breaking the boundary of the usage range, making the application of these electronic products truly convenient for people's lives.

[0004] Package Antenna (Antenna in Package, abbreviated as AiP) is a technology that integrates an antenna and a chip in a package based on packaging materials and processes to achieve system-level wireless functions. Since the AiP technology conforms to the trend of increasing the integration degree of silicon-based semiconductor processes, it provides a good antenna and packaging solution for system-level wireless chips. With the rapid development of communication information, the AiP technology has become an essential technology for 5G (5th Generation) communication and automotive radar chips. Therefore, the AiP technology has received extensive attention. Wafer-level Package Antenna (WLP AiP) operates on a whole wafer, making an antenna on the encapsulation layer, which has higher precision and is thinner, lighter, shorter, and smaller in size compared to traditional AiP modules. Therefore, it has been widely used. In the application of antennas, such as in mobile phone terminals, the antenna transmits and receives signals through a combination of multiple functional chip modules. The known method is to directly fabricate the antenna on the surface of a printed circuit board (PCB). The disadvantage is that this method will make the antenna occupy additional PCB area. Moreover, due to the long transmission signal line, the performance is poor, the power consumption is large, and the package volume is large. Especially, the loss of traditional PCB packaging is too large under 5G millimeter-wave transmission, and it is difficult to effectively protect the antenna circuit chip in the existing packaging process. The process flow is still relatively complex, and the antenna electrothermal performance and antenna performance efficiency need to be improved. The existing packaging structure is generally single-layer encapsulation (single-layer compound), making the size of the packaging structure for achieving the expected function large, and the packaging stability of the chip and its metal bumps also needs to be improved. In addition, the method of chip protection packaging in the packaging structure is relatively complex.

[0005] Therefore, it is necessary to provide an antenna packaging structure and a packaging method to solve the above problems in the prior art. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide an antenna packaging structure and a packaging method, which are used to solve the problems of large antenna packaging volume, difficult effective protection of chips, and simple and stable packaging in the prior art.

[0007] To achieve the above object and other related objects, the present invention provides an antenna packaging method, including the steps of:

[0008] Provide a support substrate, and form a temporary bonding layer on the support substrate;

[0009] Form a redistribution layer on the temporary bonding layer, the redistribution layer including a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0010] Form a first antenna layer electrically connected to the redistribution layer on the second surface;

[0011] Form a first metal feed pillar electrically connected to the first antenna layer on the first antenna layer;

[0012] Encapsulate the first metal feed pillar with a first encapsulation layer, and make the first encapsulation layer expose the top surface of the first metal feed pillar;

[0013] Form a second antenna layer electrically connected to the first metal feed pillar on the first encapsulation layer;

[0014] Form a second metal feed pillar electrically connected to the second antenna layer on the second antenna layer;

[0015] Encapsulate the second metal feed pillar with a second encapsulation layer, and make the second encapsulation layer expose the top surface of the second metal feed pillar;

[0016] Form a third antenna layer electrically connected to the second metal feed pillar on the second encapsulation layer;

[0017] Based on the temporary bonding layer, peel off the redistribution layer and the support substrate, expose the first surface of the redistribution layer, form a first opening in the redistribution layer from the first surface, and form at least one semiconductor chip electrically connected to the redistribution layer on the first surface;

[0018] Encapsulate the semiconductor chip with a third encapsulation layer, and the third encapsulation layer is formed on the surface of the first surface;

[0019] A second opening communicating with the first opening is formed in the third encapsulation layer. The first opening and the second opening constitute a lead-out hole, and a metal bump electrically connected to the redistribution layer is formed in the lead-out hole.

[0020] Optionally, the support substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

[0021] Optionally, the temporary bonding layer includes a photothermal conversion layer. Herein, the photothermal conversion layer is irradiated with a laser to separate the photothermal conversion layer from the redistribution layer and the support substrate, and then the redistribution layer and the support substrate are peeled off.

[0022] Optionally, forming the redistribution layer includes the steps of:

[0023] forming a first dielectric layer on the surface of the temporary bonding layer;

[0024] forming a seed layer on the surface of the first dielectric layer by a sputtering process, forming a first metal layer on the seed layer, and etching the first metal layer and the seed layer to form a patterned first metal wiring layer;

[0025] forming a second dielectric layer on the surface of the patterned first metal wiring layer, and etching the second dielectric layer to form a second dielectric layer with patterned through holes;

[0026] filling a conductive plug in the patterned through holes, then forming a second metal layer on the surface of the second dielectric layer by a sputtering process, and etching the metal layer to form a patterned second metal wiring layer.

[0027] Optionally, after forming the first antenna layer, the following steps are further included: forming a first protective adhesion layer covering the first antenna layer on the redistribution layer, forming the first metal feed post on the surface of the first antenna layer via the first protective adhesion layer, and forming the first encapsulation layer on the first protective adhesion layer; and / or, after forming the second antenna layer, the following steps are further included: forming a second protective adhesion layer covering the second antenna layer on the first encapsulation layer, forming the second metal feed post on the surface of the second antenna layer via the second protective adhesion layer, and forming the second encapsulation layer on the second protective adhesion layer.

[0028] Optionally, before forming the first metal feeder post, the following steps are further included: forming a first lower metal layer on the surface of the first antenna layer, wherein the first metal feeder post is formed on the surface of the first lower metal layer, and the first metal feeder post is formed by wire bonding process or electroplating process or electroless plating process; and / or, before forming the second metal feeder post, the following steps are further included: forming a second lower metal layer on the surface of the second antenna layer, wherein the second metal feeder post is formed on the surface of the second lower metal layer, and the second metal feeder post is formed by wire bonding process or electroplating process or electroless plating process.

[0029] Optionally, there are multiple first metal feeder posts, and the arrangement of the multiple first metal feeder posts includes: forming a first electromagnetic shielding structure based on the first metal feeder posts and the first antenna layer to achieve electromagnetic shielding of the packaging structure; and / or, there are multiple second metal feeder posts, and the arrangement of the multiple second metal feeder posts includes: forming a second electromagnetic shielding structure based on the second metal feeder posts and the second antenna layer to achieve electromagnetic shielding of the packaging structure.

[0030] Optionally, the number of the semiconductor chips is multiple, and the semiconductor chips include one of active components and passive components, wherein the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor.

[0031] Optionally, after forming the semiconductor chips, the following steps are further included: performing underfill on each of the semiconductor chips to form an underfill layer, and the underfill layer is formed between the semiconductor chips and the redistribution layer.

[0032] Further optionally, after forming the underfill layer, the following steps are further included: performing dam and fill on each of the semiconductor chips to form a dam and fill protective layer, and the dam and fill protective layer is at least formed on the bottom and the periphery of the semiconductor chips, and the dam and fill protective layer and the underfill layer surround the semiconductor chips, and the third encapsulation layer further encapsulates the dam and fill protective layer.

[0033] The present invention further provides an antenna packaging structure, and the antenna packaging structure is preferably manufactured by using the antenna packaging method of the present invention. Among them, the antenna packaging structure includes:

[0034] A redistribution layer, the redistribution layer includes a first surface and a second surface opposite to the first surface, and a first opening opened from the first surface is formed in the redistribution layer;

[0035] A first antenna layer, formed on the second surface and electrically connected to the redistribution layer;

[0036] The first metal feeder post is formed on the first antenna layer and electrically connected to the first antenna layer;

[0037] The first encapsulation layer covers the first metal feeder post and exposes the top surface of the first metal feeder post;

[0038] The second antenna layer is formed on the first encapsulation layer and electrically connected to the first metal feeder post;

[0039] The second metal feeder post is formed on the second antenna layer and electrically connected to the second antenna layer;

[0040] The second encapsulation layer covers the second metal feeder post and exposes the top surface of the second metal feeder post;

[0041] The third antenna layer is formed on the second encapsulation layer and electrically connected to the second metal feeder post;

[0042] At least one semiconductor chip is bonded to the first surface and electrically connected to the redistribution layer;

[0043] The third encapsulation layer covers the semiconductor chip, and a second opening penetrating the upper and lower surfaces is formed in the third encapsulation layer. The second opening is communicated with the first opening to form an extraction opening; and

[0044] Metal bumps are formed in the extraction opening and electrically connected to the redistribution layer.

[0045] Optionally, the connection part of the first metal feeder post and the first antenna layer has a first lower metal layer. The material of the first metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the first lower metal layer includes a stack layer composed of a Ni layer and an Au layer; and / or, the connection part of the second metal feeder post and the second antenna layer has a second lower metal layer. The material of the second metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the second lower metal layer includes a stack layer composed of a Ni layer and an Au layer.

[0046] Optionally, the antenna packaging structure further includes a first protective adhesive layer. The first protective adhesive layer covers the first antenna layer. The first metal feeder post is formed on the surface of the first antenna layer via the first protective adhesive layer, and the first encapsulation layer is formed on the first protective adhesive layer; and / or, the antenna packaging structure further includes a second protective adhesive layer. The second protective adhesive layer covers the second antenna layer. The second metal feeder post is formed on the surface of the second antenna layer via the second protective adhesive layer, and the second encapsulation layer is formed on the second protective adhesive layer.

[0047] Optionally, there are multiple first metal feeder posts, and the arrangement of the multiple first metal feeder posts includes: forming a first electromagnetic shielding structure based on the first metal feeder posts and the first antenna layer to achieve electromagnetic shielding of the package structure; and / or, there are multiple second metal feeder posts, and the arrangement of the multiple second metal feeder posts includes: forming a second electromagnetic shielding structure based on the second metal feeder posts and the second antenna layer to achieve electromagnetic shielding of the package structure.

[0048] Optionally, the material of the first encapsulation layer includes one of silicone and epoxy resin; the material of the second encapsulation layer includes one of silicone and epoxy resin; the material of the third encapsulation layer includes one of silicone and epoxy resin.

[0049] Optionally, the number of the semiconductor chips is multiple, and the semiconductor chips include one of active components and passive components. Among them, the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor.

[0050] Optionally, the antenna package structure further includes an underfill layer formed between the semiconductor chip and the redistribution layer.

[0051] Further optionally, the antenna package structure further includes a dam dispensing protection layer formed at least on the bottom and around the semiconductor chip, and the dam dispensing protection layer and the underfill layer surround the semiconductor chip, and the third encapsulation layer also encapsulates the dam dispensing protection layer.

[0052] As described above, for the antenna packaging structure and packaging method of the present invention, the semiconductor chip is protected based on the third packaging layer, and the chip and metal bumps are packaged simultaneously, which can effectively improve the stability of the packaging structure. The metal bumps are formed after opening holes in the packaging layer first, simplifying the process and facilitating the preparation of the metal bumps. A multi-layer antenna structure is formed through multi-layer metal feeder columns and multi-layer packaging layers, which can have a small packaging size, enhance the signal receiving ability, and expand the signal receiving bandwidth. A bottom filling layer is formed through the bottom filling process to improve the packaging stability. A dam dispensing process is added to the wafer-level packaging to improve the stability of the chip, providing double protection for the chip, effectively reducing the packaging process flow, and improving the process cycle. All active components or passive components are integrated in one packaging structure through the circuit arrangements of different redistribution layers, which can effectively reduce the packaging size. The semiconductor chip, redistribution layer, antenna metal, etc. are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption. The process structure has high integration. The antenna structure is packaged using the fan-out packaging method, effectively reducing the packaging volume, making the antenna packaging structure have a high integration degree and better packaging performance, and having broad application prospects in the field of semiconductor packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 It shows a flowchart of the chip packaging method provided by an embodiment of the present invention.

[0054] Figure 2 It shows a schematic structural diagram of forming a temporary bonding layer in the antenna packaging method according to an embodiment of the present invention.

[0055] Figure 3 It shows a schematic structural diagram of forming a first dielectric layer in the antenna packaging method according to an embodiment of the present invention.

[0056] Figure 4 It shows a schematic structural diagram of forming a first metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0057] Figure 5 It shows a diagram of forming a second dielectric layer and a second metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0058] Figure 6 It shows a schematic diagram of forming a redistribution layer with a multi-layer stacked structure in the antenna packaging method according to an embodiment of the present invention.

[0059] Figure 7 It shows a schematic structural diagram of forming a first antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0060] Figure 8Schematic diagram showing the formation of the first metal feeder post in the antenna packaging method according to an embodiment of the present invention.

[0061] Figure 9 Schematic diagram showing the formation of the first encapsulation material layer in the antenna packaging method according to an embodiment of the present invention.

[0062] Figure 10 Schematic diagram showing the formation of the first encapsulation layer in the antenna packaging method according to an embodiment of the present invention.

[0063] Figure 11 Schematic diagram showing the structure after forming the first protective adhesion layer in the antenna packaging method according to an embodiment of the present invention.

[0064] Figure 12 Schematic diagram showing the formation of the second antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0065] Figure 13 Schematic diagram showing the formation of the second metal feeder post in the antenna packaging method according to an embodiment of the present invention.

[0066] Figure 14 Schematic diagram showing the formation of the second encapsulation material layer in the antenna packaging method according to an embodiment of the present invention.

[0067] Figure 15 Schematic diagram showing the formation of the second encapsulation layer in the antenna packaging method according to an embodiment of the present invention.

[0068] Figure 16 Schematic diagram showing the formation of the third antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0069] Figure 17 Schematic diagram showing the structure after peeling off the support substrate in the antenna packaging method according to an embodiment of the present invention.

[0070] Figure 18 Schematic diagram showing the formation of the semiconductor chip and the first opening in the antenna packaging method according to an embodiment of the present invention.

[0071] Figure 19 Schematic diagram showing the formation of the bottom filling layer in the antenna packaging method according to an embodiment of the present invention.

[0072] Figure 20 Schematic diagram showing the formation of the third encapsulation layer in the antenna packaging method according to an embodiment of the present invention.

[0073] Figure 21 Schematic diagram showing the formation of the dam dispensing protection layer in the antenna packaging method according to an embodiment of the present invention.

[0074] Figure 22Schematic diagram showing the formation of the second opening in the antenna packaging method according to an embodiment of the present invention.

[0075] Figure 23 Schematic diagram showing the formation of metal bumps in the antenna packaging method according to an embodiment of the present invention.

[0076] Element number description

[0077] 101 Support substrate

[0078] 102 Temporary bonding layer

[0079] 201 First dielectric layer

[0080] 202 First metal wiring layer

[0081] 203 Second dielectric layer

[0082] 204 Second metal wiring layer

[0083] 301 First antenna layer

[0084] 302 First lower metal layer

[0085] 303 First metal feeder post

[0086] 304 First encapsulation material layer

[0087] 305 First encapsulation layer

[0088] 306 First protection adhesion layer

[0089] 307 Second antenna layer

[0090] 308 Second lower metal layer

[0091] 309 Second metal feeder post

[0092] 310 Second encapsulation material layer

[0093] 311 Second encapsulation layer

[0094] 312 Third antenna layer

[0095] 401 Semiconductor chip

[0096] 402 Underfill layer

[0097] 403 Dam dispensing protection layer

[0098] 501 First opening

[0099] 502 Third encapsulation layer

[0100] 503 Second opening

[0101] 504 Metal Bumps

[0102] Steps S1 - S12 Specific Embodiment

[0103] The following uses specific specific examples to illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0104] When detailing the embodiments of the present invention, for ease of explanation, the cross-sectional views showing the device structure will be enlarged locally out of the general proportion, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0105] For convenience of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on", etc. may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can also be one or more intervening layers.

[0106] In the context of this application, the structure in which the first feature is "above" the second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0107] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0108] Embodiment 1:

[0109] As Figure 1 shown, the present invention provides an antenna packaging method, and the packaging method includes the steps of:

[0110] Provide a support substrate, and form a temporary bonding layer on the support substrate;

[0111] A redistribution layer is formed on the temporary bonding layer. The redistribution layer includes a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0112] A first antenna layer electrically connected to the redistribution layer is formed on the second surface;

[0113] A first metal feedthrough post electrically connected to the first antenna layer is formed on the first antenna layer;

[0114] The first metal feedthrough post is encapsulated with a first encapsulation layer, and the top surface of the first metal feedthrough post is exposed by the first encapsulation layer;

[0115] A second antenna layer electrically connected to the first metal feedthrough post is formed on the first encapsulation layer;

[0116] A second metal feedthrough post electrically connected to the second antenna layer is formed on the second antenna layer;

[0117] The second metal feedthrough post is encapsulated with a second encapsulation layer, and the top surface of the second metal feedthrough post is exposed by the second encapsulation layer;

[0118] A third antenna layer electrically connected to the second metal feedthrough post is formed on the second encapsulation layer;

[0119] Based on the temporary bonding layer, the redistribution layer and the support substrate are peeled off to expose the first surface of the redistribution layer. A first opening is formed in the redistribution layer from the first surface, and at least one semiconductor chip electrically connected to the redistribution layer is formed on the first surface;

[0120] The semiconductor chip is encapsulated with a third encapsulation layer, and the third encapsulation layer is formed on the surface of the first surface;

[0121] A second opening communicating with the first opening is formed in the third encapsulation layer. The first opening and the second opening constitute an extraction hole, and a metal bump electrically connected to the redistribution layer is formed in the extraction hole.

[0122] The encapsulation method of the present invention will be described in detail below with reference to specific embodiments.

[0123] As Figure 1 in S1 and Figure 2 shown, a support substrate 101 is provided, and a temporary bonding layer 102 is formed on the support substrate.

[0124] As an example, the support substrate 101 includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate. Specifically, in this embodiment, the support substrate 101 is selected as a glass substrate, which has a lower cost, is easy to form a separation layer on its surface, and can reduce the difficulty of subsequent peeling processes.

[0125] As an example, the temporary bonding layer 102 includes a light-to-heat conversion layer. Referring to Figure 17 as shown, in subsequent steps, the light-to-heat conversion layer is irradiated with a laser to separate the light-to-heat conversion layer from the redistribution layer and the support substrate 101, and then the redistribution layer and the support substrate 101 are peeled off.

[0126] Specifically, the temporary bonding layer 102 includes a light-to-heat conversion layer (LTHC), which is formed on the support substrate 101 by a spin coating process and then cured by a curing process. The light-to-heat conversion layer (LTHC) has stable performance and a relatively smooth surface, which is beneficial to the subsequent production of the redistribution layer. Moreover, in the subsequent peeling process, the peeling difficulty is relatively low. In addition, after the redistribution layer and the support substrate 101 are peeled off, the support substrate 101 can be reused, saving costs.

[0127] As Figure 1 shown in S2 and Figures 3 - 6 as shown, a redistribution layer (RDL) is formed on the temporary bonding layer 102. The redistribution layer includes a first surface connected to the temporary bonding layer 102 and a second surface opposite to the first surface.

[0128] As an example, forming the redistribution layer includes the steps of:

[0129] As Figure 3 shown, a first dielectric layer 201 is formed on the surface of the temporary bonding layer 102 by a chemical vapor deposition process or a physical vapor deposition process. The material of the first dielectric layer 201 includes one or more combinations of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass. For example, the material of the first dielectric layer 201 is selected as PI (polyimide) to further reduce the process difficulty and process cost.

[0130] Next, as Figure 4 shown, a seed layer is formed on the surface of the first dielectric layer 201 by a sputtering process, a first metal layer is formed on the seed layer, and the first metal layer and the seed layer are etched to form a patterned first metal wiring layer 202. The material of the seed layer includes a stack of a titanium layer and a copper layer. The material of the first metal wiring layer 202 includes one or more combinations of copper, aluminum, nickel, gold, silver, and titanium.

[0131] Next, as Figure 5 shown, a second dielectric layer 203 is formed on the surface of the patterned first metal wiring layer 202 by a chemical vapor deposition process or a physical vapor deposition process, and the second dielectric layer 203 is etched to form a second dielectric layer 203 with patterned vias. The material of the second dielectric layer 203 includes one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass. For example, the material of the second dielectric layer 203 is selected as PI (polyimide) to further reduce the process difficulty and process cost.

[0132] Continuing, as Figure 5 shown, conductive plugs are filled in the patterned vias, and then a second metal layer is formed on the surface of the second dielectric layer 203 by a sputtering process, and the metal layer is etched to form a patterned second metal wiring layer 204. The material of the second metal wiring layer includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.

[0133] In addition, as Figure 6 shown, the steps of forming the second dielectric layer 203 and the second metal layer are repeated to form multiple metal layers and multiple dielectric layers, thereby forming a rewiring layer with a multi-layer stacked structure to achieve different wiring functions.

[0134] As Figure 1 in S3 and Figure 7 shown, a first antenna layer 301 electrically connected to the rewiring layer is formed on the second surface. Among them, the material of the first antenna layer 301 can be copper, etc., and the structure of the first antenna layer is set according to the actual situation.

[0135] As an example, referring to Figure 11 shown, after forming the first antenna layer 301, the steps further include: forming a first protective adhesion layer 306 covering the first antenna layer 301 on the rewiring layer, the first metal feed pillar 303 is formed on the surface of the first antenna layer 301 via the first protective adhesion layer 306, and the first encapsulation layer 305 is formed on the first protective adhesion layer 306. In an optional example, the material of the first protective adhesion layer 306 includes polyimide. Since adjacent two-layer antenna structures are separated by an antenna layer, it is easy to cause a decrease in the adhesion strength between the two-layer antenna structures, resulting in displacement or rupture. In the present invention, a first protective adhesion layer 306 is provided between adjacent two-layer antenna structures, which can protect the antenna metal on the one hand and improve the adhesion performance between adjacent two-layer antenna structures on the other hand, and improve the mechanical structure strength of the antenna.

[0136] As Figure 1 in S4 andFigure 8 As shown, a first metal feed column 303 electrically connected to the first antenna layer 301 is formed on the first antenna layer 301.

[0137] As an example, before forming the first metal feed column 303 (wire bond), the steps further include: forming a first lower metal layer 302 on the surface of the first antenna layer, and the first metal feed column 303 is formed on the surface of the first lower metal layer 302. Wherein, in an alternative example, the first metal feed column 303 is formed by wire bonding process or electroplating process or electroless plating process.

[0138] Specifically, the first lower metal layer 302 includes a stack layer composed of a Ni layer and an Au layer. The material of the first metal feed column 303 includes one of Au, Ag, Cu, and Al, but is not limited thereto. It can also be any material that can be used as the stud metal material. In this embodiment, the first metal feed column 303 is formed on the first lower metal layer 302 by wire bonding process. The first lower metal layer 302 can effectively enhance the bonding strength between the first metal feed column 303 and the first antenna layer and reduce the contact resistance. In an alternative example, when the first protective adhesion layer 306 exists, the step of forming an opening in the first protective adhesion layer 306 to form the first metal feed column 303 is further included.

[0139] As an example, the first metal feed column 303 is multiple, and the arrangement of the multiple first metal feed columns 303 includes: forming an electromagnetic shielding structure based on the first metal feed column 303 and the first antenna layer 301 to achieve electromagnetic shielding of the package structure.

[0140] Specifically, in an example, a layout of the first metal feed column 303 is provided. The first metal feed column 303 is formed on the surface of the first antenna layer 301. Through the layout of the first metal feed column 303, the first metal feed column 303 and specific positions of some metal layers in the first antenna layer 301 jointly form an electromagnetic shielding protection structure, thereby achieving electromagnetic shielding of the obtained package structure.

[0141] As Figure 1 shown in S5 and Figures 9 - 11 as shown, the first metal feed column 303 is encapsulated by the first encapsulation layer 305, and the top surface of the first metal feed column 303 is exposed by the first encapsulation layer 305.

[0142] Specifically, in one example, the first metal feeder post 303 is encapsulated with the first encapsulation material layer 304, and the first encapsulation material layer 304 is thinned (ground) so that the top surface of the first metal feeder post 303 is exposed. The thinned first encapsulation material layer 304 forms the first encapsulation layer 305. As an example, the method of encapsulating the first metal feeder post 303 with the first encapsulation material layer 304 includes one of compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, and spin coating. The material of the first encapsulation layer 305 includes one of silicone and epoxy resin. As Figure 11 shown, when the first protective adhesion layer 306 exists, the first encapsulation layer 305 is formed on the first protective adhesion layer 306.

[0143] As Figure 1 in S6 of Figure 12 shown, a second antenna layer 307 electrically connected to the first metal feeder post 303 is formed on the first encapsulation layer 305.

[0144] Specifically, the material of the second antenna layer 307 can be copper or the like, and the structure of the second antenna layer is set according to actual needs. In one example, as Figure 16 shown, a dielectric layer is formed around the second antenna layer. The material of the dielectric layer can be selected as PI (polyimide). Optionally, the upper surface of the dielectric layer is flush with the upper surface of the second antenna layer. The second encapsulation layer is formed on the upper surfaces of the dielectric layer and the second antenna layer. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the first metal feeder post 303. The multi-layer antenna layer can enhance the signal reception ability and expand the signal reception bandwidth. The present invention can obtain an antenna structure layer with a multi-layer structure, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and at the same time have lower power consumption. The structures such as the semiconductor chip 401, the redistribution layer, and the antenna metal are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption, and the process structure integration is high.

[0145] As an example, after forming the second antenna layer 307, the following steps are further included: forming a second protective adhesive layer covering the second antenna layer 307 on the first encapsulation layer. At this time, subsequently, the second metal feedthrough pillar 309 is formed on the surface of the second antenna layer via the second protective adhesive layer, and subsequently, the second encapsulation layer 311 is formed on the second protective adhesive layer. In an alternative example, the material of the second protective adhesive layer includes polyimide. Since two adjacent antenna structures are separated by an antenna layer, it is likely to cause a decrease in the adhesion strength between the two antenna structures, resulting in displacement or rupture. In the present invention, a second protective adhesive layer is provided between two adjacent antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between two adjacent antenna structures, enhancing the mechanical strength of the antenna. Additionally, "and / or" herein means that it can be either one of the two described solutions only, or both of the two described solutions can be carried out simultaneously. For example, after forming the first antenna layer, the following steps are further included: forming a first protective adhesive layer covering the first antenna layer on the redistribution layer, the first metal feedthrough pillar is formed on the surface of the first antenna layer via the first protective adhesive layer, and the first encapsulation layer is formed on the first protective adhesive layer; and / or, after forming the second antenna layer, the following steps are further included: forming a second protective adhesive layer covering the second antenna layer on the first encapsulation layer, the second metal feedthrough pillar is formed on the surface of the second antenna layer via the second protective adhesive layer, and the second encapsulation layer is formed on the second protective adhesive layer, which means that it can be that only the first protective adhesive layer is formed after forming the first antenna layer, without forming the second protective adhesive layer, or it can be that only the second protective adhesive layer is formed after forming the second antenna layer, without forming the first protective adhesive layer, or it can be that both the first protective adhesive layer and the second protective adhesive layer are formed.

[0146] As Figure 1 shown in S7 of Figure 13 and as shown in the figure, a second metal feedthrough pillar 309 electrically connected to the second antenna layer 307 is formed on the second antenna layer 307. In an alternative example, the second metal feedthrough pillar 309 and the first metal feedthrough pillar 303 are arranged vertically corresponding to each other.

[0147] As an example, before forming the second metal feedthrough pillar 309 (wire bond), the following steps are further included: forming a second lower metal layer 308 on the surface of the second antenna layer, and the second metal feedthrough pillar 309 is formed on the surface of the second lower metal layer 308. In an alternative example, the second metal feedthrough pillar 309 is formed by a wire bonding process, an electroplating process, or an electroless plating process.

[0148] Specifically, the second lower metal layer 308 includes a stack layer composed of a Ni layer and an Au layer. The material of the second metal feed pillar 309 includes one of Au, Ag, Cu, and Al, but is not limited thereto. It can also be any material that can be used as the pillar metal material. In this embodiment, the second metal feed pillar 309 is formed on the second lower metal layer 308 by wire bonding. The second lower metal layer 308 can effectively enhance the bonding strength between the second metal feed pillar 309 and the second antenna layer and reduce the contact resistance. In an alternative example, when there is the second protective adhesion layer, it further includes the step of forming an opening in the second protective adhesion layer to form the second metal feed pillar 309.

[0149] As an example, there are multiple second metal feed pillars 309, and the arrangement of the multiple second metal feed pillars 309 includes: forming a second electromagnetic shielding structure based on the second metal feed pillar 309 and the second antenna layer 307 to achieve electromagnetic shielding of the packaging structure.

[0150] Such as Figure 1 in S8 and Figures 14 - 15 as shown, the second metal feed pillar 309 is encapsulated by the second encapsulation layer 311, and the top surface of the second metal feed pillar 309 is exposed by the second encapsulation layer 311.

[0151] Specifically, in an example, the second metal feed pillar 309 is encapsulated by the second encapsulation material layer 310, and the second encapsulation material layer 310 is thinned (ground) so that the top surface of the second metal feed pillar 309 is exposed, and the thinned second encapsulation material layer 310 forms the second encapsulation layer 311. As an example, the method of encapsulating the second metal feed pillar 309 by the second encapsulation material layer 310 includes one of compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, and spin coating. The material of the second encapsulation layer 311 includes one of silica gel and epoxy resin. When there is the second protective adhesion layer, the second encapsulation layer is formed on the second protective adhesion layer.

[0152] Such as Figure 1 in S9 and Figure 16 as shown, a third antenna layer 312 electrically connected to the second metal feed pillar 309 is formed on the second encapsulation layer 311.

[0153] Specifically, the material of the third antenna layer 312 can be copper or the like, and the structure of the third antenna layer is set according to actual requirements. The third antenna layer 312 is electrically connected to the second antenna layer 307 through the second metal feeder post 309. The multi-layer antenna layer can enhance the signal receiving ability and expand the signal receiving bandwidth. The present invention can obtain an antenna structure layer with a multi-layer structure, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and at the same time have lower power consumption. The structures such as semiconductor chips, rewiring layers, and antenna metals are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption, and the process structure integration is high. The present invention is encapsulated by a multi-layer encapsulation layer, that is, a multi-layer compound antenna structure, which can reduce the package size.

[0154] As Figure 1 S10 in Figures 17 - 18 shown, based on the temporary bonding layer 102, the rewiring layer and the support substrate 101 are peeled off to expose the first surface of the rewiring layer. A first opening 501 is formed in the rewiring layer from the first surface, and at least one semiconductor chip 401 (die bonder) electrically connected to the rewiring layer is formed on the first surface. For example, the semiconductor chip can be formed by a bonding method well-known in the art. After Die bonder, the chip is preliminarily fixed on the wafer through reflow soldering.

[0155] Specifically, in one example, in subsequent steps, the photothermal conversion layer is irradiated with a laser to separate the photothermal conversion layer from the rewiring layer and the support substrate 101. In addition, after separation, a first opening 501 can be formed by punching on the first surface of the rewiring layer. The punching can be performed by laser drilling technology. The first opening 501 exposes the metal lines in the rewiring layer. The first opening defines the position where subsequent metal bumps are formed, and at the same time, it is also beneficial to the implementation of the process of forming a second opening in the third encapsulation layer, improving the encapsulation accuracy. In one example, the first opening can be formed first, and then the semiconductor chip 401 is formed on the first surface of the rewiring layer to facilitate the protection of the antenna circuit chip. There is a spacing between the first opening 501 and the semiconductor chip 401 to facilitate subsequent encapsulation processes, and the specific size is set according to actual requirements.

[0156] As an example, the number of the semiconductor chips 401 is multiple, for example, it can be two. The semiconductor chip 401 includes one of active components and passive components. Among them, the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor. The types of different semiconductor chips are set according to actual situations. The present invention can integrate all active components or passive components in one packaging structure through the circuit layout of different redistribution layers, and mount active and passive components on the same wafer at the same time, which can effectively reduce the packaging size.

[0157] As an example, as Figure 19 shown, after forming the semiconductor chip 401, the following step is further included: performing underfill on each of the semiconductor chips 401 to form an underfill layer 402.

[0158] Specifically, in one example, an underfill layer is further formed between the semiconductor chip 401 and the redistribution layer. The filling material flows to the bottom of the chip through capillary siphon action to fill the gaps between bumps, and after solidification, it plays a role in fixing the chip. The filling material for underfill can be epoxy resin.

[0159] As an example, referring to Figure 21 shown, after forming the underfill layer 402, the following step is further included: performing dam and dispense on each of the semiconductor chips 401 to form a dam and dispense protection layer 403. The dam and dispense protection layer 403 is at least formed on the bottom and around the semiconductor chip 401, and the dam and dispense protection layer 403 and the underfill layer 402 surround the semiconductor chip 401.

[0160] Specifically, in the present invention, after the semiconductor chip 401 is fixed, a dam and dispense process is performed on it. Using the dispensing technology, dams are formed around the semiconductor chip 401, and then dispensing is performed in the middle to form the dam and dispense protection layer 403. The formed dam and dispense protection layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. After underfill, that is, after performing underfill on the semiconductor chip 401 to form an underfill layer, the dam and dispense process is performed. The dam and dispense protection layer 403 and the underfill layer 402 surround the semiconductor chip 401, thereby realizing double protection of the semiconductor chip 401 and reducing the process flow. Among them, the dam and dispense protection layer 403 can be formed based on the dispensing process, and the material of the dam and dispense protection layer 403 can be epoxy resin.

[0161] As Figure 1 in S11 and Figures 20 - 21As shown, the semiconductor chip 401 is encapsulated by a third encapsulation layer 502, and the third encapsulation layer 502 is formed on the surface of the first side.

[0162] Specifically, the method of forming the third encapsulation layer 502 includes one of compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, and spin coating, and the material of the third encapsulation layer 502 includes one of silica gel and epoxy resin. Among them, when any one of the underfill layer and the dam dispensing protection layer is also formed during the encapsulation process, the encapsulation layer encapsulates them together, thereby further improving the stability of the encapsulation structure.

[0163] As Figure 1 in S12 and Figures 22 - 23 As shown, a second opening 503 communicating with the first opening 501 is formed in the third encapsulation layer 502. The first opening and the second opening constitute an extraction hole, and a metal bump 504 electrically connected to the redistribution layer is formed in the extraction hole.

[0164] Specifically, laser technology can be used to open a hole (laser drill) in the third encapsulation layer 502, such as laser drilling, to form the second opening 503. The second opening 503 communicates with the first opening formed in the redistribution layer before, and the two together constitute an extraction hole. It is possible to directly drill a hole in the third encapsulation layer 502, which is simple and convenient. Then, the metal bump 504 is formed in the extraction hole for electrical extraction. The metal bump 504 can be one of solder, silver solder, and gold-tin alloy solder. In the present invention, the third encapsulation layer forming (molding) process is used to reinforce the chip, and then laser drilling (Laser drill) is used to open the hole. Laser drilling technology has high precision, strong versatility, high efficiency, low cost, and significant comprehensive technical and economic benefits.

[0165] Embodiment 2:

[0166] As Figure 23 shown, and referring to Figures 1 to 22 , the present invention also provides an antenna encapsulation structure. Among them, the antenna encapsulation structure is preferably encapsulated by the antenna encapsulation method of the present invention. Of course, the antenna encapsulation structure can also be encapsulated by other encapsulation methods. The antenna encapsulation structure includes:

[0167] A redistribution layer, the redistribution layer includes a first side and a second side opposite to the first side, and a first opening 501 opened from the first side is formed in the redistribution layer;

[0168] A first metal feeder post 303, formed on the first antenna layer 301 and electrically connected to the first antenna layer 301;

[0169] A first encapsulation layer 305 covers the first metal feedthrough post 303, and the first encapsulation layer 305 exposes the top surface of the first metal feedthrough post 303;

[0170] A second antenna layer 307 is formed on the first encapsulation layer 305, and the second antenna layer 307 is electrically connected to the first metal feedthrough post 303;

[0171] A second metal feedthrough post 309 is formed on the second antenna layer 307 and is electrically connected to the second antenna layer 307;

[0172] A second encapsulation layer 311 covers the second metal feedthrough post 309 and exposes the top surface of the second metal feedthrough post;

[0173] A third antenna layer 312 is formed on the second encapsulation layer 311 and is electrically connected to the second metal feedthrough post 309;

[0174] At least one semiconductor chip 401 is bonded to the first surface and is electrically connected to the redistribution layer;

[0175] A third encapsulation layer 502 covers the semiconductor chip 401, and a second opening 503 penetrating the upper and lower surfaces is formed in the third encapsulation layer 502. The second opening 503 is communicated with the first opening 501 to form an extraction opening; and metal bumps 504 are formed in the extraction opening and are electrically connected to the redistribution layer.

[0176] Specifically, in one example, the redistribution layer includes a first dielectric layer 201, a first metal wiring layer 202, a second dielectric layer 203, conductive vias, and a second metal wiring layer 204. Of course, it can also be multiple metal layers and multiple dielectric layers, so as to form a redistribution layer with a multi-layer stacked structure to achieve different wiring functions. Among them, the material of the dielectric layer includes one or more combinations of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass. For example, the material of the dielectric layer is selected as PI (polyimide) to further reduce the process difficulty and process cost. The material of the metal wiring layer includes one or more combinations of copper, aluminum, nickel, gold, silver, and titanium.

[0177] As an example, the connection part of the first metal feeder column 303 and the first antenna layer 301 has a first lower metal layer 302, that is, at the interface where they are in contact, the first lower metal layer is formed between them. The material of the first metal feeder column 303 includes one of Au, Ag, Cu, and Al, but is not limited thereto, and can also be any material that can be used as the stud metal material. The material of the first lower metal layer 302 includes a laminate composed of a Ni layer and an Au layer. The first lower metal layer 302 can effectively enhance the bonding strength between the first metal feeder column 303 and the redistribution layer and reduce the contact resistance.

[0178] As an example, the connection part of the second metal feeder column 309 and the second antenna layer 307 has a second lower metal layer 308, that is, at the interface where they are in contact, the second lower metal layer is formed between them. The material of the second metal feeder column 309 includes one of Au, Ag, Cu, and Al, but is not limited thereto, and can be any material that can be used as the stud metal material. The material of the second lower metal layer 308 includes a laminate composed of a Ni layer and an Au layer. The second lower metal layer 308 can effectively enhance the bonding strength between the second metal feeder column 309 and the second antenna layer 307 and reduce the contact resistance.

[0179] Specifically, the material of the first antenna layer 301 can be copper, the material of the second antenna layer 307 can be copper, the material of the third antenna layer 312 can be copper, etc. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the first metal feeder column 303, and the third antenna layer 312 is electrically connected to the second antenna layer 307 through the second metal feeder column 309. The multi-layer antenna layer can enhance the signal receiving ability and expand the signal receiving bandwidth. The present invention can obtain an antenna structure layer with a multi-layer structure, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and at the same time have lower power consumption. The present invention is encapsulated by a multi-layer encapsulation layer, that is, a multi-layer compound antenna structure, which can reduce the encapsulation size and the package size. The structures such as semiconductor chips, redistribution layers, and antenna metals are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption, and the process structure integration is high.

[0180] As an example, the antenna package structure further includes a first protective adhesion layer 306. The first protective adhesion layer 306 covers the first antenna layer 301. The first metal feeder column 303 is formed on the surface of the first antenna layer 301 via the first protective adhesion layer 306. The first encapsulation layer 305 is formed on the first protective adhesion layer 306.

[0181] As an example, the antenna packaging structure further includes a second protective adhesive layer (not shown in the figure). The second protective adhesive layer covers the second antenna layer 307, the second metal feeder post 309 is formed on the surface of the second antenna layer 307 via the second protective adhesive layer, and the second encapsulation layer 311 is formed on the second protective adhesive layer.

[0182] Specifically, a first protective adhesive layer 306 covering the first antenna layer 301 is formed on the rewiring layer. The first metal feeder post 303 is formed on the surface of the first antenna layer 301 via the first protective adhesive layer 306, and the first encapsulation layer 305 is formed on the first protective adhesive layer 306. Refer to Figure 11 shown. Optionally, the material of the first protective adhesive layer 306 includes polyimide. Since there is an antenna layer separating two adjacent antenna structures, it is likely to cause a reduction in the adhesion strength between the two antenna structures, resulting in displacement or rupture. In the present invention, the first protective adhesive layer 306 is provided between two adjacent antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between two adjacent antenna structures, enhancing the mechanical structure strength of the antenna. Similarly, the second protective adhesive layer also has the above effects.

[0183] As an example, the material of the first encapsulation layer 305 includes one of silicone and epoxy resin. Additionally, as Figure 11 shown, when the first protective adhesive layer 306 exists, the first encapsulation layer 305 is formed on the first protective adhesive layer 306. As an example, the material of the second encapsulation layer 311 includes one of silicone and epoxy resin. Additionally, when the second protective adhesive layer exists, the second encapsulation layer 311 is formed on the second protective adhesive layer.

[0184] As an example, the number of semiconductor chips 401 is multiple, for example, it can be two. The semiconductor chip 401 includes one of an active component and a passive component. Among them, the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor. The present invention can integrate all active components or passive components in one packaging structure through the circuit layout of different rewiring layers, and simultaneously mount active and passive components on the same wafer, effectively reducing the packaging size.

[0185] As an example, the number of the first metal feeder posts 303 is multiple. The arrangement manner of the multiple first metal feeder posts 303 includes: forming a first electromagnetic shielding structure based on the first metal feeder posts and the first antenna layer 301 to achieve electromagnetic shielding of the packaging structure.

[0186] As an example, the number of the second metal feeder posts 309 is plural, and the arrangement of the plural second metal feeder posts 309 includes: forming a second electromagnetic shielding structure based on the second metal feeder posts 309 and the second antenna layer 307 to achieve electromagnetic shielding of the package structure.

[0187] Specifically, in one example, an arrangement of the first metal feeder posts 303 is provided. The first metal feeder posts 303 are formed on the surface of the first antenna layer 301. Through the arrangement of the first metal feeder posts 303, the first metal feeder posts 303 and specific positions of some metal layers in the first antenna layer 301 jointly form a first electromagnetic shielding protection structure, thereby achieving electromagnetic shielding of the obtained package structure.

[0188] As an example, the antenna package structure further includes an underfill layer 402, and the underfill layer 402 is formed between the semiconductor chip 401 and the redistribution layer.

[0189] As an example, the material of the underfill layer 402 includes epoxy resin. In one example, the underfill layer 402 is an epoxy resin layer.

[0190] As an example, the antenna package structure further includes a dam and dispense protection layer 403, and the underfill layer 402 and the dam and dispense protection layer 403 surround the semiconductor chip 401.

[0191] As an example, the material of the dam and dispense protection layer 403 includes epoxy resin. In one example, the dam and dispense protection layer is an epoxy resin layer.

[0192] Specifically, the first opening 501 exposes the metal lines in the redistribution layer. The first opening defines the positions where subsequent metal bumps are formed. There is a spacing between the first opening 501 and the semiconductor chip 401 to facilitate subsequent packaging processes, and the specific size is set according to actual requirements.

[0193] In the encapsulation structure of the present invention, the bottom fill layer 402 is further formed, which can improve the encapsulation stability of the semiconductor chip. Further, the dam dispensing protection layer 403 is formed. The formed dam dispensing protection layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. The dam dispensing protection layer 403 and the bottom fill layer 402 surround the semiconductor chip 401, thereby realizing double protection of the semiconductor chip 401 and reducing the process flow. Among them, the material of the bottom fill layer 402 can be epoxy resin, and the material of the dam dispensing protection layer 403 can be epoxy resin. In addition, the semiconductor chip is protected by the third encapsulation layer. The material of the third encapsulation layer 502 includes one of silicone and epoxy resin. Laser technology can be used to drill holes (laser drill) in the third encapsulation layer 502 to form the second opening 503. The second opening 503 communicates with the first opening formed in the redistribution layer before, and the two together form an extraction hole. Drilling can be directly performed in the third encapsulation layer 502, which is simple and convenient. Then, metal bumps 504 are formed in the extraction hole for electrical extraction. In addition, the metal bump 504 can be one of solder, silver solder, and gold-tin alloy solder.

[0194] As described above, for the antenna encapsulation structure and encapsulation method of the present invention, the semiconductor chip is protected based on the third encapsulation layer, and the chip and the metal bumps are encapsulated simultaneously, which can effectively improve the stability of the encapsulation structure. First, holes are drilled in the encapsulation layer and then metal bumps are formed, simplifying the process and facilitating the preparation of the metal bumps. A multi-layer antenna structure is formed through multi-layer metal feed pillars and multi-layer encapsulation layers, which can reduce the encapsulation size, enhance the signal reception ability, and expand the signal reception bandwidth. The bottom fill layer is formed through the bottom fill process to improve the encapsulation stability. The dam dispensing process is added to the wafer-level encapsulation to improve the stability of the chip, provide double protection for the chip, and effectively reduce the encapsulation process flow and improve the process cycle. All active components or passive components are integrated into one encapsulation structure through the circuit arrangement of different redistribution layers, which can effectively reduce the encapsulation size. The semiconductor chip, redistribution layer, and antenna metal and other structures are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have low power consumption. The process structure has high integration. The antenna structure is encapsulated by the fan-out encapsulation method, effectively reducing the encapsulation volume, making the antenna encapsulation structure have high integration and better encapsulation performance, and having a wide application prospect in the field of semiconductor encapsulation.

[0195] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. An antenna packaging method, characterized in that, the packaging method includes the steps of: providing a support substrate and forming a temporary bonding layer on the support substrate; forming a redistribution layer on the temporary bonding layer, the redistribution layer including a first surface connected to the temporary bonding layer and a second surface opposite to the first surface; forming a first antenna layer electrically connected to the redistribution layer on the second surface; forming a first metal feed post electrically connected to the first antenna layer on the first antenna layer; encapsulating the first metal feed post with a first encapsulation layer and exposing the top surface of the first metal feed post by the first encapsulation layer; forming a second antenna layer electrically connected to the first metal feed post on the first encapsulation layer; forming a second metal feed post electrically connected to the second antenna layer on the second antenna layer; encapsulating the second metal feed post with a second encapsulation layer and exposing the top surface of the second metal feed post by the second encapsulation layer; forming a third antenna layer electrically connected to the second metal feed post on the second encapsulation layer; peeling off the redistribution layer and the support substrate based on the temporary bonding layer, exposing the first surface of the redistribution layer, forming a first opening in the redistribution layer from the first surface, and forming at least one semiconductor chip electrically connected to the redistribution layer on the first surface; encapsulating the semiconductor chip with a third encapsulation layer, the third encapsulation layer being formed on the surface of the first surface; forming a second opening communicating with the first opening in the third encapsulation layer, the first opening and the second opening constituting an extraction hole, and forming a metal bump electrically connected to the redistribution layer in the extraction hole.

2. The antenna packaging method according to claim 1, characterized in that, the support substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

3. The antenna packaging method according to claim 1, characterized in that, the temporary bonding layer includes a photothermal conversion layer, wherein the photothermal conversion layer is irradiated with a laser to separate the photothermal conversion layer from the redistribution layer and the support substrate, and then the redistribution layer and the support substrate are peeled off.

4. The antenna packaging method according to claim 1, characterized in that, forming the redistribution layer includes the steps of: forming a first dielectric layer on the surface of the temporary bonding layer; forming a seed layer on the surface of the first dielectric layer by a sputtering process, forming a first metal layer on the seed layer, and etching the first metal layer and the seed layer to form a patterned first metal wiring layer; forming a second dielectric layer on the surface of the patterned first metal wiring layer and etching the second dielectric layer to form a second dielectric layer with patterned vias; filling conductive plugs in the patterned vias, then forming a second metal layer on the surface of the second dielectric layer by a sputtering process, and etching the metal layer to form a patterned second metal wiring layer.

5. The antenna packaging method according to claim 1, characterized in that, After forming the first antenna layer, the method further includes the steps of: forming a first protective adhesive layer covering the first antenna layer on the redistribution layer, forming the first metal feed pillar on the surface of the first antenna layer via the first protective adhesive layer, and forming the first encapsulation layer on the first protective adhesive layer; and / or, after forming the second antenna layer, the method further includes the steps of: forming a second protective adhesive layer covering the second antenna layer on the first encapsulation layer, forming the second metal feed pillar on the surface of the second antenna layer via the second protective adhesive layer, and forming the second encapsulation layer on the second protective adhesive layer.

6. The antenna encapsulation method according to claim 1, wherein, before forming the first metal feed pillar, the method further includes the step of: forming a first lower metal layer on the surface of the first antenna layer, wherein the first metal feed pillar is formed on the surface of the first lower metal layer, and the first metal feed pillar is formed by wire bonding process or electroplating process or electroless plating process; and / or, before forming the second metal feed pillar, the method further includes the step of: forming a second lower metal layer on the surface of the second antenna layer, wherein the second metal feed pillar is formed on the surface of the second lower metal layer, and the second metal feed pillar is formed by wire bonding process or electroplating process or electroless plating process.

7. The antenna encapsulation method according to claim 1, wherein, the number of the semiconductor chips is multiple, the semiconductor chips include one of active components and passive components, wherein the active components include one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive components include one of a resistor, a capacitor and an inductor.

8. The antenna encapsulation method according to any one of claims 1-7, wherein, after forming the semiconductor chips, the method further includes the step of: performing underfill on each of the semiconductor chips to form an underfill layer, and the underfill layer is formed between the semiconductor chips and the redistribution layer.

9. The antenna encapsulation method according to claim 8, wherein, after forming the underfill layer, the method further includes the step of: performing dam and fill on each of the semiconductor chips to form a dam and fill protective layer, the dam and fill protective layer is formed at least at the bottom and around the semiconductor chips, and the dam and fill protective layer and the underfill layer surround the semiconductor chips, and the third encapsulation layer also encapsulates the dam and fill protective layer.

10. An antenna encapsulation structure, wherein, the antenna encapsulation structure includes: a redistribution layer, the redistribution layer includes a first surface and a second surface opposite to the first surface, and a first opening opened from the first surface is formed in the redistribution layer; a first antenna layer, formed on the second surface and electrically connected to the redistribution layer; a first metal feed pillar, formed on the first antenna layer and electrically connected to the first antenna layer; a first encapsulation layer, covering the first metal feed pillar and exposing the top surface of the first metal feed pillar; a second antenna layer, formed on the first encapsulation layer and electrically connected to the first metal feed pillar; A second metal feedthrough post, formed on the second antenna layer and electrically connected to the second antenna layer; A second encapsulation layer, covering the second metal feedthrough post and exposing the top surface of the second metal feedthrough post; A third antenna layer, formed on the second encapsulation layer and electrically connected to the second metal feedthrough post; At least one semiconductor chip, bonded to the first surface and electrically connected to the redistribution layer; A third encapsulation layer, covering the semiconductor chip, and a second opening penetrating the upper and lower surfaces is formed in the third encapsulation layer, and the second opening is communicated with the first opening to form an extraction opening; and Metal bumps, formed in the extraction opening and electrically connected to the redistribution layer, and the metal bumps are one of solder, silver solder, and gold-tin alloy solder.

11. The antenna packaging structure according to claim 10, wherein, The connection part of the first metal feedthrough post and the first antenna layer has a first lower metal layer, the material of the first metal feedthrough post includes one of Au, Ag, Cu, and Al, and the material of the first lower metal layer includes a stack composed of a Ni layer and an Au layer; and / or, the connection part of the second metal feedthrough post and the second antenna layer has a second lower metal layer, the material of the second metal feedthrough post includes one of Au, Ag, Cu, and Al, and the material of the second lower metal layer includes a stack composed of a Ni layer and an Au layer.

12. The antenna packaging structure according to claim 10, wherein, The antenna packaging structure further includes a first protective adhesive layer, the first protective adhesive layer covers the first antenna layer, the first metal feedthrough post is formed on the surface of the first antenna layer via the first protective adhesive layer, and the first encapsulation layer is formed on the first protective adhesive layer; and / or, the antenna packaging structure further includes a second protective adhesive layer, the second protective adhesive layer covers the second antenna layer, the second metal feedthrough post is formed on the surface of the second antenna layer via the second protective adhesive layer, and the second encapsulation layer is formed on the second protective adhesive layer.

13. The antenna packaging structure according to claim 10, wherein, The material of the first encapsulation layer includes one of silicone and epoxy resin; the material of the second encapsulation layer includes one of silicone and epoxy resin; the material of the third encapsulation layer includes one of silicone and epoxy resin.

14. The antenna packaging structure according to claim 10, wherein, The number of the semiconductor chips is multiple, and the semiconductor chips include one of active components and passive components. Among them, the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor.

15. The antenna packaging structure according to any one of claims 10-14, wherein, The antenna packaging structure further includes a bottom filling layer, and the bottom filling layer is formed between the semiconductor chip and the redistribution layer.

16. The antenna packaging structure according to claim 15, wherein, The antenna packaging structure further includes a dam dispensing protective layer, the dam dispensing protective layer is formed at least on the bottom and around the semiconductor chip, and the semiconductor chip is surrounded by the dam dispensing protective layer and the bottom filling layer, and the third packaging layer further packages the dam dispensing protective layer.

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