Event-driven color image acquisition

Abstract

The object of the present invention is to obtain a color image. A solid-state image pickup element according to an embodiment includes a plurality of light receiving parts, each of which receives light of a specific wavelength to generate a charge corresponding to the amount of light received; a detection part, which detects a photocurrent based on the charge generated in at least one of the plurality of light receiving parts; a generation part, which generates a voltage signal based on the charge generated in each of the plurality of light receiving parts; and a drive circuit, which, based on the detection result of the photocurrent by the detection part, causes the generation part to generate a voltage signal based on the charge generated in at least two of the plurality of light receiving parts.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Japanese Priority Patent Application JP2018-187784 filed on Oct. 2, 2018, the entire contents of which are hereby incorporated by reference. Technical Field

[0003] The present disclosure relates to a solid-state image pickup element and an image pickup device. Background Art

[0004] In the past, synchronous solid-state image pickup elements that capture image data (frames) synchronously with a synchronization signal such as a vertical synchronization signal have been used in image pickup devices and the like. In such general synchronous solid-state image pickup elements, image data can be acquired only in each cycle (e.g., 1 / 60 second) of the synchronization signal. Therefore, it is difficult to cope with situations requiring faster processing in fields related to transportation, robots, and the like. Therefore, an asynchronous solid-state image pickup element has been proposed, in which a detection circuit for detecting in real time that the amount of light received exceeds a threshold value as an address event is set for each pixel. An asynchronous solid-state image pickup element that detects address events for each pixel is also called a dynamic vision sensor (DVS).

[0005] [Citation list]

[0006] [Patent Document]

[0007] [PTL 1] JP 2016-533140A Summary of the invention

[0008] [Technical issues]

[0009] However, in the DVS of the related art, due to the structural characteristics of asynchronously reading pixel signals from each pixel, a wavelength selection element such as a color filter is not installed. For this reason, there is a problem that a color image cannot be obtained by the DVS.

[0010] In this regard, the present disclosure proposes a solid-state image pickup element and an image pickup device capable of acquiring a color image.

[0011] [Solution to the problem]

[0012] According to an embodiment of the present disclosure, there is provided a solid-state image pickup element, which includes a plurality of light receiving portions, each of which receives light of a specific wavelength to generate an electric charge corresponding to the amount of light received; a detection portion, which detects a photocurrent based on the electric charge generated in at least one of the plurality of light receiving portions; a generation portion, which generates a voltage signal based on the electric charge generated in each of the plurality of light receiving portions; and a driving circuit, which, based on the detection result of the photocurrent by the detection portion, causes the generation portion to generate a voltage signal based on the electric charge generated in at least two of the plurality of light receiving portions respectively. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a block diagram showing a schematic configuration example of a solid-state image pickup element and an image pickup apparatus according to the first embodiment.

[0014] Figure 2 is a diagram showing a stacked structure example of the solid-state image pickup element according to the first embodiment.

[0015] Figure 3 is a block diagram showing a functional configuration example of the solid-state image pickup element according to the first embodiment.

[0016] Figure 4 is a block diagram showing a schematic configuration example of a pixel array section according to the first embodiment.

[0017] Figure 5 1 is a schematic diagram showing a configuration example in the case of adopting a Bayer array of pixel blocks according to the first embodiment.

[0018] Figure 6 : is a schematic diagram showing a configuration example in the case of adopting an X-Trans (registered trademark) type arrangement of pixel blocks according to the first embodiment.

[0019] Figure 7 : is a schematic diagram showing a configuration example in the case of adopting the Quad Bayer arrangement of pixel blocks according to the first embodiment.

[0020] Figure 8 1 is a schematic diagram showing a configuration example in the case where a unit pixel of a pixel block according to the first embodiment does not include a color filter.

[0021] Fig. 9 is a schematic diagram showing an example of a configuration for detecting an address event according to the first embodiment.

[0022] Fig.10 is another schematic diagram showing an example of the configuration for detecting an address event according to the first embodiment.

[0023] Fig.11is a circuit diagram showing a schematic configuration example of a pixel block according to the first embodiment.

[0024] Fig.12 : is a block diagram showing a schematic configuration example of an address event detection section according to the first embodiment.

[0025] Fig.13 is a circuit diagram showing a schematic configuration example of a current-voltage conversion unit according to the first embodiment.

[0026] Fig.14 is a circuit diagram showing a schematic configuration example of a subtractor and a quantizer according to the first embodiment.

[0027] Fig.15 is a block diagram showing a schematic configuration example of a column ADC according to the first embodiment.

[0028] Fig.16 is a timing chart showing an example of the operation of the solid-state image pickup element according to the first embodiment.

[0029] Fig.17 is a flowchart showing an example of the operation of the solid-state image pickup element according to the first embodiment.

[0030] Fig.18 is a schematic diagram showing an example of a configuration for detecting an address event according to the second embodiment.

[0031] Fig.19 is another schematic diagram showing an example of a configuration for detecting an address event according to the second embodiment.

[0032] Fig. 20 is a circuit diagram showing a schematic configuration example of a pixel block according to the second embodiment.

[0033] Fig.21 is a schematic diagram showing an example of a pixel block according to the third embodiment.

[0034] Fig. 22 is a schematic diagram showing an example of a pixel block according to the fourth embodiment.

[0035] Fig.23 is a schematic diagram showing an example of a pixel block according to the fifth embodiment.

[0036] Fig.24 is a schematic diagram showing an example of a pixel block according to Modification 1 of the fifth embodiment.

[0037] Fig.25 is a schematic diagram showing an example of a pixel block according to Modification 2 of the fifth embodiment.

[0038] Fig.26 is a schematic diagram showing an example of a pixel block according to the sixth embodiment.

[0039] Fig. 27 is a schematic diagram showing an example of a pixel block according to Modification 1 of the sixth embodiment.

[0040] Fig.28 is a schematic diagram showing an example of a pixel block according to Modification 2 of the sixth embodiment.

[0041] Fig.29 is a schematic diagram showing an example of a pixel block according to the seventh embodiment. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that in the following embodiments, by assigning the same reference numerals to the same parts, repeated descriptions will be omitted.

[0043] In addition, the present disclosure will be described according to the order of items shown below.

[0044] 1. Introduction

[0045] 2. First Implementation Method

[0046] 2.1 Example of Configuration of Image Pickup Device

[0047] 2.2 Example of a solid-state image pickup element configuration

[0048] 2.2.1 Example of stacked structure of solid-state image pickup element

[0049] 2.2.2 Example of functional configuration of solid-state image pickup element

[0050] 2.3 Configuration Example of Pixel Array Section

[0051] Example of a 2.4-pixel block

[0052] 2.4.1 Bayer arrangement

[0053] 2.4.2 X-Trans (registered trademark) type arrangement

[0054] 2.4.3 Quad Bayer Array

[0055] 2.4.4 Others

[0056] 2.5 Detection of triggering of address events

[0057] 2.6 Example of pixel block configuration

[0058] 2.7 Example of the configuration of the address event detection unit

[0059] 2.8 Example of the configuration of a current-voltage conversion unit

[0060] 2.9 Example of Subtractor and Quantizer Configuration

[0061] 2.10-column ADC configuration example

[0062] 2.11 Operation Example of Solid-State Image Pickup Element

[0063] 2.11.1 Timing diagram

[0064] 2.11.2 Flowchart

[0065] 2.12 Effect

[0066] 3. Second Implementation Method

[0067] 3.1 Detection of address event triggering

[0068] 3.2 Example of pixel block structure

[0069] 3.3 Operation Example of Solid-State Image Pickup Element

[0070] 3.4 Effect

[0071] 4. Third Implementation Method

[0072] 4.1 Example of a pixel block

[0073] 4.2 Effect

[0074] 5. Fourth Implementation Method

[0075] 5.1 Example of a pixel block

[0076] 5.2 Effect

[0077] 6. Fifth Implementation Method

[0078] 6.1 Example of a pixel block

[0079] 6.2 Modification 1

[0080] 6.3 Modification 2

[0081] 6.4 Effect

[0082] 7. Sixth Implementation Plan

[0083] 7.1 Example of a pixel block

[0084] 7.2 Modification 1

[0085] 7.3 Modification 2

[0086] 7.4 Effect

[0087] 8. Seventh Implementation Plan

[0088] 8.1 Effect

[0089] 1. Introduction

[0090] A general dynamic vision sensor (DVS) adopts a so-called event-driven driving method, which detects the presence or absence of a trigger of an address event for each unit pixel, and when the trigger of an address event is detected, reads out a pixel signal from the unit pixel that triggered the address event.

[0091] Note that a unit pixel in this specification is a minimum unit of a pixel including one photoelectric conversion element (also referred to as a light-receiving element), and corresponds to, for example, each point in the image data read out from the image sensor. In addition, an address event is an event that occurs for an address assigned to each of a plurality of unit pixels arranged in a 2D lattice pattern, and corresponds to, for example, an event in which a current value of a photocurrent based on charges generated in a photoelectric conversion element or an amount of change thereof exceeds a certain threshold value, etc.

[0092] In this event-driven DVS, unlike a general image sensor (e.g., a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD) image sensor), readout for each unit pixel is performed asynchronously. For this reason, for example, when only a wavelength selection element such as a color filter is installed on the DVS to acquire a color image, in the case of reconstructing a color based on a wavelength component for reconstructing the color (e.g., the three primary colors of RGB), it is not possible to ensure that the pixel signals of the wavelength component of red (R), the wavelength component of green (G), and the wavelength component of blue (B) are read out synchronously, and each pixel signal is read out at an irregular timing. As a result, a time offset or a spatial offset occurs in the wavelength component for reconstructing the color, making it difficult to reconstruct the correct color.

[0093] Note that, for example, the time offset refers to an offset on the time axis due to the time offset caused by asynchronously reading out the pixel signals of all wavelength components for reconstructing the color. Also, for example, the spatial offset refers to an offset in the color space due to the difficulty in determining the white level for white balance adjustment based on the pixel signals of all wavelength components for reconstructing the color.

[0094] Therefore, in the following embodiments, a solid-state image pickup element and an image pickup device capable of acquiring a color image in which colors are correctly reconstructed will be described in detail by way of some examples.

[0095] In addition, in some of the following embodiments, a solid-state image pickup element and an image pickup device capable of reconstructing polarization information of incident light instead of color reconstruction or together with color reconstruction will be described in detail by way of some examples.

[0096] 2. First Implementation Method

[0097] First, a solid-state image pickup element and an image pickup apparatus according to a first embodiment of the present disclosure will be described in detail with reference to the drawings.

[0098] 2.1 Example of Configuration of Image Pickup Device

[0099] Figure 1 1 is a block diagram showing a schematic configuration example of a solid-state image pickup element and an image pickup device according to the first embodiment. Figure 1 As shown, for example, the image pickup apparatus 100 includes an imaging lens 110, a solid-state image pickup element 200, a recording section 120, and a control section 130. As the image pickup apparatus 100, a camera mounted on an industrial robot, a vehicle-mounted camera, or the like is assumed.

[0100] The imaging lens 110 converges the incident light and forms an image on the light receiving surface of the solid-state image pickup element 200. The light receiving surface refers to the surface on which the photoelectric conversion element (also called the light receiving element) of the solid-state image pickup element 200 is arranged. The solid-state image pickup element 200 performs photoelectric conversion on the incident light to generate image data. In addition, the solid-state image pickup element 200 performs predetermined signal processing such as noise removal or white balance adjustment on the generated image data. The result obtained by the signal processing and the detection signal indicating the presence or absence of the trigger of the address event are output to the recording section 120 via the signal line 209. Note that the method for generating the detection signal indicating the presence or absence of the trigger of the address event will be described later.

[0101] The recording section 120 includes, for example, a flash memory, a dynamic random access memory (DRAM), a static random access memory (SRAM), or the like, and records data input from the solid-state image pickup element 200 .

[0102] The control section 130 includes, for example, a central processing unit (CPU) and the like, and outputs various instructions via a signal line 139 , thereby controlling the respective units such as the solid-state image pickup element 200 in the image pickup apparatus 100 .

[0103] 2.2 Example of a solid-state image pickup element configuration

[0104] Next, a configuration example of the solid-state image pickup element 200 will be described in detail with reference to the drawings.

[0105] 2.2.1 Example of stacked structure of solid-state image pickup element

[0106] Figure 2 1 is a diagram showing an example of a stacked structure of a solid-state image pickup element according to the first embodiment. Figure 2As shown, the solid-state image pickup element 200 has a structure in which a light receiving chip 201 and a detection chip 202 are stacked up and down. As the bonding of the light receiving chip 201 and the detection chip 202, for example, so-called direct bonding can be used, in which the respective bonding surfaces are flattened and bonded together by inter-electron forces. However, the present disclosure is not limited to this. For example, so-called Cu-Cu bonding, bump bonding, etc., in which copper (Cu) electrode pads formed on the bonding surfaces are bonded to each other, can be used.

[0107] In addition, the light receiving chip 201 and the detection chip 202 are electrically connected via a connection portion such as a through silicon via (TSV) that penetrates the semiconductor substrate. For connection using TSV, for example, a so-called dual TSV method in which two TSVs (i.e., a TSV provided on the light receiving chip 201 and a TSV provided from the light receiving chip 201 to the detection chip 202) are connected on the outer surface of the chip, a so-called shared TSV method in which each chip is connected via a TSV penetrating from the light receiving chip 201 to the detection chip 202, etc. can be adopted.

[0108] However, when the light receiving chip 201 and the detection chip 202 are bonded together using Cu-Cu bonding or bump bonding, the chips are electrically connected via the Cu-Cu bonding portion or the bump bonding portion.

[0109] 2.2.2 Example of functional configuration of solid-state image pickup element

[0110] Figure 3 1 is a block diagram showing an example of the functional configuration of a solid-state image pickup element according to the first embodiment. Figure 3 As shown, the solid-state image pickup element 200 includes a drive circuit 211 , a signal processing unit 212 , an arbitrator 213 , a column ADC 220 , and a pixel array section 300 .

[0111] In the pixel array section 300, a plurality of unit pixels are arranged in a 2D lattice pattern. As will be described in detail later, for example, a unit pixel includes a photoelectric conversion element such as a photodiode and a circuit for reading out the charge generated by photoelectric conversion from the photoelectric conversion element (hereinafter referred to as a pixel circuit or a pixel signal generating section). Here, the pixel circuit can be shared by a plurality of photoelectric conversion elements. In this case, each unit pixel includes a photoelectric conversion element and a shared pixel circuit.

[0112] A plurality of unit pixels arranged in a 2D lattice pattern in the pixel array section 300 are grouped into a plurality of pixel blocks, each pixel block including a predetermined number of unit pixels. Hereinafter, a set of unit pixels or pixel blocks arranged in a horizontal direction is referred to as a "row", and a set of unit pixels or pixel blocks arranged in a direction perpendicular to the row is referred to as a "column".

[0113] Each unit pixel generates a charge corresponding to the amount of light received by the photoelectric conversion element. Each pixel block detects the presence or absence of the triggering of an address event based on whether the current value or the amount of change of the current (hereinafter referred to as photocurrent) caused by the charge generated in any unit pixel belonging to the pixel block exceeds a predetermined threshold. Then, when the address event is triggered, each pixel block outputs a request for reading out a pixel signal having a voltage value corresponding to the amount of light received by the photoelectric conversion element from each unit pixel belonging to the pixel block to the arbitrator 213.

[0114] The driving circuit 211 drives each unit pixel to output a pixel signal from each unit pixel to the column ADC 220 .

[0115] The arbitrator 213 arbitrates the request from each pixel block and sends a predetermined response to the pixel block that issued the request based on the arbitration result. Upon receiving the response, the pixel block supplies a detection signal indicating the presence or absence of a trigger of an address event (hereinafter referred to as an address event detection signal) to the drive circuit 211 and the signal processing unit 212.

[0116] For each column of the pixel block, the column ADC 220 converts the analog pixel signal from the column into a digital signal. Then, the column ADC 220 supplies the digital signal generated by the conversion to the signal processing unit 212.

[0117] The signal processing unit 212 performs predetermined signal processing such as correlated double sampling (CDS) processing (noise removal) or white balance adjustment on the digital signal from the column ADC 220. Then, the signal processing unit 212 supplies the result of the signal processing and the address event detection signal to the recording section 120 via the signal line 209.

[0118] 2.3 Configuration Example of Pixel Array Section

[0119] Next, a configuration example of the pixel array section 300 will be described. Figure 4 1 is a block diagram showing a schematic configuration example of a pixel array section according to the first embodiment. Figure 4 As shown, a plurality of unit pixels in the pixel array section 300 are grouped into a plurality of pixel blocks 310. Each pixel block 310 includes a plurality of unit pixels arranged in I rows×J columns (I and J are positive integers).

[0120] Each pixel block 310 includes a pixel signal generating section 320, a plurality of light receiving sections 330 of I rows×J columns, and an address event detecting section 400. The pixel signal generating section 320 and the address event detecting section 400 are shared by a plurality of light receiving sections 330 within the pixel block 310. Therefore, each unit pixel includes one light receiving section 330 and the shared pixel signal generating section 320. The coordinates of each unit pixel coincide with the coordinates of the light receiving sections 330 arranged in a 2D lattice pattern on the light receiving surface of the solid-state image pickup element 200.

[0121] One vertical signal line VSL is wired in a column of one pixel block 310. Therefore, when the number of columns of the pixel block 310 is set to m (m is a positive integer), m vertical signal lines VSL are arranged in the pixel array section 300.

[0122] The light receiving unit 330 is a photoelectric conversion element that generates a photocurrent by performing photoelectric conversion on incident light. According to the control of the driving circuit 211, the light receiving unit 330 supplies the photocurrent generated by the photoelectric conversion to the pixel signal generating unit 320 or the address event detecting unit 400.

[0123] The pixel signal generating section 320 generates a signal having a voltage value corresponding to the charge amount of the photocurrent supplied from the light receiving section 330 as the pixel signal SIG. The pixel signal generating section 320 supplies the generated pixel signal SIG to the column ADC 220 via the vertical signal line VSL.

[0124] The address event detection unit 400 detects the presence or absence of a trigger of an address event based on whether the current value of the photocurrent supplied from the light receiving unit 330 within the same pixel block 310 or the amount of change thereof exceeds a predetermined threshold. For example, the address event includes an ON event indicating that the amount of change exceeds an upper threshold and an OFF event indicating that the amount of change is lower than a lower threshold. In addition, for example, the address event detection signal includes one bit indicating the detection result of the ON event and one bit indicating the detection result of the OFF event. Note that the address event detection unit 400 can be configured to detect either an ON event or an OFF event.

[0125] When an address event is triggered, the address event detection section 400 supplies a request to the arbitrator 213 to request transmission of a detection signal. Further, upon receiving a response to the request from the arbitrator 213, the address event detection section 400 supplies a detection signal to the drive circuit 211 and the signal processing unit 212.

[0126] The driving circuit 211 supplied with the detection signal performs readout for each unit pixel belonging to the pixel block 310 including the address event detection section 400 supplied with the detection signal. Through this readout, the pixel signal SIG having an analog value is sequentially input to the column ADC 220 from each unit pixel in the pixel block 310 to be read out.

[0127] Example of a 2.4-pixel block

[0128] exist Figure 4 In the illustrated configuration, for example, the pixel block 310 is composed of a combination of unit pixels that receive wavelength components for reconstructing colors. For example, in the case of reconstructing colors based on the three primary colors of RGB, the pixel block 310 is composed of a combination of unit pixels that receive red (R) light, unit pixels that receive green (G) light, and unit pixels that receive blue (B) light.

[0129] Therefore, in the present embodiment, for example, based on the arrangement of wavelength selection elements (e.g., color filters) provided for the light receiving portion 330 of each unit pixel (hereinafter referred to as a color filter array), a plurality of unit pixels arranged in a 2D grid pattern in the pixel array portion 300 are grouped into a plurality of pixel blocks 310.

[0130] As color filter arrays, there are various arrays, for example, a 2×2 pixel Bayer arrangement, a 3×3 pixel color filter array for an X-Trans (registered trademark) CMOS sensor (hereinafter referred to as an X-Trans (registered trademark) type arrangement), a 4×4 pixel Quad Bayer arrangement (also called a quadratic arrangement), etc.

[0131] Therefore, hereinafter, the pixel block 310 corresponding to the case where a representative color filter array is adopted will be explained through some examples.

[0132] 2.4.1 Bayer arrangement

[0133] Figure 5 2 is a schematic diagram showing an example of the configuration of a pixel block corresponding to the case where the Bayer arrangement is adopted in the color filter array. Figure 5 As shown, in the case where the color filter array adopts the Bayer arrangement, one pixel block 310A includes a basic pattern of 4 unit pixels (hereinafter, referred to as a unit pattern) having 2×2 pixels, which is a repeating unit in the Bayer arrangement. Therefore, for example, each pixel block 310A according to this example includes a light receiving portion 330R having a red (R) color filter, a light receiving portion 330Gr having a green (Gr) color filter, a light receiving portion 330Gb having a green (Gb) color filter, and a light receiving portion 330B having a blue (B) color filter.

[0134] 2.4.2 X-Trans (registered trademark) type arrangement

[0135] Figure 6 1 is a schematic diagram showing an example of the configuration of a pixel block corresponding to the case where the color filter array adopts an X-Trans (registered trademark) type arrangement. Figure 6As shown, in this example, one pixel block 310B includes a basic pattern of 9 unit pixels in total having 3×3 pixels (hereinafter, referred to as a unit pattern), which is a repeating unit in an X-Trans (registered trademark) type arrangement. Therefore, for example, each pixel block 310B according to this example includes five light receiving portions 330G having a green (G) color filter arranged along two diagonal lines of a rectangular area forming the unit pattern, two light receiving portions 330R having a red (R) color filter arranged point-symmetrically with respect to the light receiving portion 330G located at the center of the rectangular area as a central axis, and two light receiving portions 330B having a blue (B) color filter arranged point-symmetrically with respect to the light receiving portion 330G located at the center of the rectangular area as a central axis in the same manner.

[0136] 2.4.3 Quad Bayer Array

[0137] Figure 7 2 is a schematic diagram showing an example of the configuration of a pixel block corresponding to the case where the color filter array adopts the Quad Bayer arrangement. Figure 7 As shown, in the case where the color filter array adopts the Quad Bayer arrangement, one pixel block 310C includes a basic pattern of 4×4 pixels (hereinafter, referred to as a unit pattern) having a total of 16 unit pixels, which is a repeating unit in the Quad Bayer arrangement. Therefore, for example, each pixel block 310C according to this example includes a total of four light receiving portions 330R of 2×2 pixels with a red (R) color filter, a total of four light receiving portions 330Gr of 2×2 pixels with a green (Gr) color filter, a total of four light receiving portions 330Gb of 2×2 pixels with a green (Gb) color filter, and a total of four light receiving portions 330B of 2×2 pixels with a blue (B) color filter.

[0138] 2.4.4 Others

[0139] Figure 8 2 is a schematic diagram showing a configuration example of a pixel block in a case where a unit pixel does not include a color filter. For example, there is a case where the solid-state image pickup element 200 does not include a color filter, such as a case where the light receiving section 330 for the three primary colors of RGB is arranged along the incident direction of light (longitudinal product), etc. Figure 8 As shown, this case has a structure in which a light receiving portion 330G for receiving green (G) light, a light receiving portion 330B for receiving blue (B) light, and a light receiving portion 330R for receiving red (R) light are provided in one pixel region 330G / B / R. Therefore, in this case, in the present embodiment, the pixel block 310D includes three light receiving portions 330G, 330B, and 330R provided in one pixel region 330G / B / R.

[0140] As described above, when a color filter is provided for the light receiving portion 330, a set of unit pixels included in a repeated unit pattern in the color filter array can be used as a combination of unit pixels that receive wavelength components for reconstructing colors. In addition, when no color filter is provided, a set of unit pixels can be used for each color component provided in one pixel region 330G / B / R.

[0141] However, the present disclosure is not limited thereto, and one pixel block 310 may include a set of unit pixels arranged in a plurality of unit patterns or arranged in a plurality of pixel regions 330G / B / R. In addition, without being limited by the unit pattern, a plurality of unit pixels in the pixel array section 300 may be grouped into a plurality of pixel blocks 310, so that each pixel block 310 includes a unit pixel for reconstructing a color.

[0142] Note that in a structure in which the unit pixel does not include a color filter, that is, in a structure in which the light receiving portion 330 is arranged along the incident direction of light (longitudinal area), there is a structure in which the photoelectric conversion element 333 in one or more of the plurality of light receiving portions 330 is formed using an organic material (see Fig.11 However, in this case, the light receiving portion 330 including the photoelectric conversion element 333 formed using an organic material may not include the transfer transistor 331 described later (see Fig.11 Therefore, in this case, the light receiving unit 330 having the photoelectric conversion element 333 formed using an organic material and the light receiving unit 330 having the photoelectric conversion element 333 formed in a semiconductor layer can be grouped into different pixel blocks 310.

[0143] 2.5 Detection of triggering of address events

[0144] In the above configuration, in the present embodiment, the trigger of the address event is detected for each unit pixel, and the pixel signal SIG is read out from all the unit pixels belonging to the pixel block 310 including the unit pixel whose trigger of the address event is detected. Note that in the following description, for simplicity, an example is given of a case where the Bayer arrangement is adopted as the color filter array and each pixel block 310 (corresponding to the pixel block 310A) includes a total of four light receiving portions 330R, 330Gr, 330Gb, and 330B of 2×2 pixels included in a unit pattern.

[0145] Fig. 9 and Fig.10 FIG. 2 is a schematic diagram showing an example of a configuration for detecting an address event according to the present embodiment. Fig. 9As shown, each of the plurality of light receiving sections 330R, 330Gr, 330Gb, and 330B included in the pixel block 310 has a light receiving section 330 and a color filter 314R, 314Gr, 314Gb, or 314B. In addition, in the present embodiment, a separate address event detection section 400R, 400Gr, 400Gb, or 400B is provided for each of the plurality of light receiving sections 330R, 330Gr, 330Gb, and 330B. That is, in the present embodiment, Figure 4 The address event detection section 400 in FIG. 4 includes individual address event detection sections 400R, 400Gr, 400Gb, and 400B provided for each of the light receiving sections 330R, 330Gr, 330Gb, and 330B.

[0146] like Fig. 9 and Fig.10 As shown, the photocurrent output from each of the light receiving sections 330R, 330Gr, 330Gb, and 330B is input to the corresponding address event detection section 400R, 400Gr, 400Gb, or 400B. When the current value of the photocurrent input from the corresponding light receiving section 330R, 330Gr, 330Gb, or 330B or the amount of change thereof exceeds a predetermined threshold value, each of the address event detection sections 400R, 400Gr, 400Gb, and 400B outputs a request for requesting to read out the pixel signal SIG.

[0147] The outputs of the address event detection sections 400R, 400Gr, 400Gb, and 400B are integrated by the integration unit 150. Therefore, the request output from at least one of the address event detection sections 400R, 400Gr, 400Gb, and 400B is input to the arbitrator 213 as a request common to the address event detection sections 400R, 400Gr, 400Gb, and 400B, that is, a request in units of pixel blocks. As described above, in the present embodiment, in the case where the current value of the photocurrent output by at least one of the light receiving sections 330R, 330Gr, 330Gb, and 330B included in the pixel block 310 or the amount of change thereof exceeds a predetermined threshold value, a request to read out the pixel signal SIG from each of the four unit pixels belonging to the pixel block 310 is input to the arbitrator 213.

[0148] 2.6 Example of pixel block configuration

[0149] Next, a configuration example of a pixel block will be described. Fig.11 1 is a circuit diagram showing a schematic configuration example of a pixel block according to the first embodiment. Fig.11As shown, in the pixel block 310, the pixel signal generating section 320 includes a reset transistor 321, an amplifying transistor 322, a selecting transistor 323, and a floating diffusion layer 324. The outputs of the plurality of light receiving sections 330R, 330Gr, 330Gb, and 330B included in the pixel block 310 are connected to the address event detecting sections 400R, 400Gr, 400Gb, and 400B provided individually for the respective light receiving sections.

[0150] Each of the light receiving sections 330R, 330Gr, 330Gb, and 330B includes a transfer transistor 331, an overflow gate (OFG) transistor 332, and a photoelectric conversion element 333. When the number of pixels in the pixel block 310 is set to N (N is a positive integer), N transfer transistors 331, N OFG transistors 332, and N photoelectric conversion elements 333 are configured in each pixel block 310 (in this example, N=4).

[0151] In each pixel block 310, a transmission signal TRG-R is supplied from the drive circuit 211 to the gate of the transmission transistor 331 of the light receiving portion 330R, and a control signal OFG-R is supplied from the drive circuit 211 to the gate of the OFG transistor 332. In addition, a transmission signal TRG-Gr is supplied from the drive circuit 211 to the gate of the transmission transistor 331 of the light receiving portion 330Gr, and a control signal OFG-Gr is supplied from the drive circuit 211 to the gate of the OFG transistor 332. In addition, a transmission signal TRG-Gb is supplied from the drive circuit 211 to the gate of the transmission transistor 331 of the light receiving portion 330Gb, and a control signal OFG-Gb is supplied from the drive circuit 211 to the gate of the OFG transistor 332. In addition, the transmission signal TRG-B is supplied from the drive circuit 211 to the gate of the transmission transistor 331 of the light receiving section 330B, and the control signal OFG-B is supplied from the drive circuit 211 to the gate of the OFG transistor 332. Hereinafter, in the case where the transmission signals TRG-R, TRG-Gr, TRG-Gb, and TRG-B are not distinguished, their reference numerals are set to TRG. In a similar manner, in the case where the control signals OFG-R, OFG-Gr, OFG-Gb, and OFG-B are not distinguished, their reference numerals are set to OFG.

[0152] Each of the reset transistor 321, the amplification transistor 322, and the selection transistor 323 is configured using, for example, an N-type metal oxide semiconductor (MOS) transistor. In a similar manner, the transfer transistor 331 and the OFG transistor 332 are formed using, for example, an N-type MOS transistor.

[0153] The photoelectric conversion element 333 of each of the light receiving sections 330R, 330Gr, 330Gb, and 330B is arranged in the light receiving chip 201. In addition, elements other than the photoelectric conversion element 333 in each of the light receiving sections 330R, 330Gr, 330Gb, and 330B are arranged in the detection chip 202, for example.

[0154] In each of the light receiving parts 330R, 330Gr, 330Gb and 330B, the photoelectric conversion element 333 performs photoelectric conversion on the incident light to generate charges. The transfer transistor 331 transfers the charges from the corresponding photoelectric conversion element 333 to the floating diffusion layer 324 according to the transfer signal TRG. The OFG transistor 332 supplies the electrical signal generated by the photoelectric conversion element 333 to the corresponding address event detection part 400R, 400Gr, 400Gb or 400B according to the control signal OFG. Here, the electrical signal supplied to each address event detection part 400R, 400Gr, 400Gb and 400B is a photocurrent caused by the charges generated in the photoelectric conversion element 333 of the corresponding light receiving part 330R, 330Gr, 330Gb or 330B.

[0155] The floating diffusion layer 324 accumulates the charge transferred as a photocurrent from the photoelectric conversion element 333 via the transfer transistor 331, and generates a voltage corresponding to the amount of accumulated charge. The reset transistor 321 discharges (initializes) the charge accumulated in the floating diffusion layer 324 according to the reset signal from the drive circuit 211. The amplifier transistor 322 amplifies the voltage of the floating diffusion layer 324. The selection transistor 323 outputs the signal of the voltage amplified by the amplifier transistor 322 as a pixel signal SIG to the column ADC 220 via the vertical signal line VSL according to the selection signal SEL from the drive circuit 211.

[0156] In response to the instruction to start detecting the address event from the control section 130, the drive circuit 211 drives the OFG transistors 332 of all the light receiving sections 330R, 330Gr, 330Gb, and 330B in the pixel array section 300 by the control signal OFG to supply the photocurrent. In this way, the photocurrent is supplied from the corresponding light receiving section 330R, 330Gr, 330Gb, or 330B to the respective address event detection sections 400R, 400Gr, 400Gb, and 400B.

[0157] The outputs of the plurality of address event detection sections 400R, 400Gr, 400Gb, and 400B associated with one pixel block 310 are integrated by the integration unit 150, which is a node combining output lines of the respective address event detection sections 400R, 400Gr, 400Gb, and 400B. Therefore, when any one of the address event detection sections 400R, 400Gr, 400Gb, and 400B associated with a certain pixel block 310 detects a trigger of an address event, the request of the pixel block 310 is input to the arbitrator 213.

[0158] As described above, when a request in units of pixel blocks is input, the arbitrator 213 arbitrates the requests from the respective pixel blocks 310, and based on the arbitration result, sends a predetermined response to the pixel block 310 that issued the request. The pixel block 310 that has received the response supplies a detection signal (address event detection signal) indicating the presence or absence of a trigger of an address event to the drive circuit 211 and the signal processing unit 212.

[0159] The driving circuit 211 turns off the OFG transistor 332 in all the light receiving parts 330R, 330Gr, 330Gb, and 330B belonging to the pixel block 310 as the supply source of the address event detection signal. In this way, the supply of the photocurrent from each of the light receiving parts 330R, 330Gr, 330Gb, and 330B in the pixel block 310 to the corresponding address event detection part 400R, 400Gr, 400Gb, or 400B is suspended.

[0160] Subsequently, the drive circuit 211 sequentially drives the transfer transistors 331 in all the light receiving portions 330R, 330Gr, 330Gb, and 330B belonging to the pixel block 310 by the transfer signal TRG. In this way, the charges accumulated in the photoelectric conversion element 333 are sequentially transferred from all the light receiving portions 330R, 330Gr, 330Gb, and 330B of the pixel block 310 to the floating diffusion layer 324 of the pixel signal generating section 320. Then, the pixel signals SIG of the plurality of corresponding unit pixels within the pixel block 310 are sequentially output from the pixel signal generating section 320.

[0161] As described above, the solid-state image pickup element 200 outputs the pixel signals SIG from the light receiving portions 330R, 330Gr, 330Gb, and 330B included in the pixel block 310 in which the trigger of the address event is detected to the column ADC 220. In this way, compared with the case where the pixel signals SIG are read out from all unit pixels regardless of the presence or absence of the trigger of the address event, the power consumption of the solid-state image pickup element 200 and the processing amount of image processing can be reduced.

[0162] 2.7 Example of the configuration of the address event detection unit

[0163] Fig.121 is a block diagram showing a schematic configuration example of an address event detection unit according to the first embodiment. Fig.12 As shown, the address event detection section 400 includes a current-voltage conversion unit 410, a buffer 420, a subtractor 430, a quantizer 440, and a transmission unit 450. Note that in the following description, in the case where the light receiving sections 330R, 330Gr, 330Gb, and 330B are not distinguished, their reference numerals are set to 330. In a similar manner, in the following description, in the case where the address event detection sections 400R, 400Gr, 400Gb, and 400B are not distinguished, their reference numerals are set to 400.

[0164] The current-voltage conversion unit 410 converts the photocurrent from the light receiving section 330 into a logarithmic voltage signal, and supplies the voltage signal generated in this manner to the buffer 420 .

[0165] The buffer 420 corrects the voltage signal from the current-voltage conversion unit 410 and outputs the corrected voltage signal to the subtractor 430 .

[0166] The subtractor 430 reduces the voltage level of the voltage signal from the buffer 420 according to the row driving signal from the driving circuit 211 , and supplies the reduced voltage signal to the quantizer 440 .

[0167] The quantizer 440 quantizes the voltage signal from the subtractor 430 into a digital signal, and outputs the digital signal generated in this manner as a detection signal to the transmission unit 450 .

[0168] The transmission unit 450 transmits the detection signal from the quantizer 440 to the signal processing unit 212 and the like. For example, when detecting the triggering of an address event, the transmission unit 450 supplies the arbitrator 213 with a request for requesting that the address event detection signal be sent from the transmission unit 450 to the drive circuit 211 and the signal processing unit 212. Then, after receiving a response to the request from the arbitrator 213, the transmission unit 450 supplies the detection signal to the drive circuit 211 and the signal processing unit 212.

[0169] 2.8 Example of the configuration of a current-voltage conversion unit

[0170] Fig.13 1 is a circuit diagram showing a schematic configuration example of a current-voltage conversion unit according to the first embodiment. Fig.13 As shown, the current-voltage conversion unit 410 includes N-type transistors 411 and 413 and a P-type transistor 412. The N-type transistors 411 and 413 and the P-type transistor 412 may be, for example, MOS transistors.

[0171] The source of the N-type transistor 411 is connected to the light receiving unit 330, and the drain thereof is connected to the power supply terminal. The P-type transistor 412 and the N-type transistor 413 are connected in series between the power supply terminal and the ground terminal. In addition, the connection node between the P-type transistor 412 and the N-type transistor 413 is connected to the gate of the N-type transistor 411 and the input terminal of the buffer 420. In addition, a predetermined bias voltage Vbias is applied to the gate of the P-type transistor 412.

[0172] The drains of the N-type transistors 411 and 413 are connected to the power supply side, thereby forming a source follower circuit. By forming such a ring-shaped source follower circuit, the photocurrent from the light receiving unit 330 is converted into a voltage signal having a logarithmic value corresponding to the amount of its charge. In addition, the P-type transistor 412 supplies a constant current to the N-type transistor 413.

[0173] 2.9 Example of Subtractor and Quantizer Configuration

[0174] Fig.14 4 is a circuit diagram showing a schematic configuration example of a subtractor and a quantizer according to the first embodiment. The subtractor 430 includes capacitors 431 and 433, an inverter 432, and a switch 434. In addition, the quantizer 440 includes a comparator 441.

[0175] One end of the capacitor 431 is connected to the output terminal of the buffer 420, and the other end is connected to the input terminal of the inverter 432. The capacitor 433 is connected in parallel to the inverter 432. The switch 434 opens and closes a path connecting both ends of the capacitor 433 according to a row driving signal.

[0176] The inverter 432 inverts the voltage signal input via the capacitor 431. The inverter 432 outputs the inverted signal to the non-inverting input terminal (+) of the comparator 441.

[0177] When the switch 434 is turned on, the voltage signal Vinit is input to the buffer 420 side of the capacitor 431. In addition, the opposite side corresponds to the virtual ground terminal. For convenience, the potential of the virtual ground terminal is set to zero. In this case, when the capacitance of the capacitor 431 is set to C1, the potential Qinit accumulated in the capacitor 431 is expressed by the following formula (1). On the other hand, since both ends of the capacitor 433 are short-circuited, its accumulated charge becomes zero.

[0178] Qinit=C1×Vinit (1)

[0179] Then, considering the case where the switch 434 is turned off and the voltage on the buffer 420 side of the capacitor 431 changes to Vafter, the charge Qafter accumulated in the capacitor 431 is expressed by the following equation (2).

[0180] Qafter=C1×Vafter (2)

[0181] On the other hand, when the output voltage is set to Vout, the charge Q2 accumulated in the capacitor 433 is expressed by the following equation (3).

[0182] Q2=-C2×Vout (3)

[0183] In this case, since the total amount of charge of the capacitors 431 and 433 does not change, the following equation (4) is satisfied.

[0184] Qinit=Qafter+Q2 (4)

[0185] When equation (4) is transformed by substituting equations (1) to (3) into equation (4), the following equation (5) is obtained.

[0186] Vout=-(C1 / C2)×(Vafter-Vinit) (5)

[0187] Formula (5) represents the subtraction operation of the voltage signal, and the benefit of the subtraction result is C1 / C2. Generally, since it is desired to maximize the benefit, it is preferred to design C1 to be large and C2 to be small. On the other hand, when C2 is too small, the kTC noise increases and the noise characteristics may deteriorate. Therefore, the capacity reduction of C2 is limited to the range of allowable noise. In addition, since the address event detection unit 400 including the subtractor 430 is installed for each pixel block, the capacitors C1 and C2 are limited in area. Taking these facts into consideration, the values ​​of the capacitors C1 and C2 are determined.

[0188] The comparator 441 compares the voltage signal from the subtractor 430 with a predetermined threshold voltage Vth applied to the inverting input terminal (−). The comparator 441 outputs a signal indicating the comparison result to the transmission unit 450 as a detection signal.

[0189] In addition, when the conversion gain of the current-voltage conversion unit 410 is set to CG log When the gain of the buffer 420 is set to "1", the gain A of the entire address event detection unit 400 is expressed by the following equation (6).

[0190] [Mathematical formula 1]

[0191]

[0192] In formula (6), i photo _n is the photocurrent of the nth unit pixel. For example, its unit is ampere (A). N is the number of unit pixels in the pixel block 310.

[0193] 2.10-column ADC configuration example

[0194] Fig.15 Column ADC 220 is a block diagram showing a schematic configuration example of a column ADC according to the first embodiment. Column ADC 220 includes a plurality of ADCs 230 provided for each column of a pixel block 310 .

[0195] Each ADC 230 converts the analog pixel signal SIG supplied via the vertical signal line VSL into a digital signal. The pixel signal SIG is converted into a digital signal having a larger number of bits than the detection signal. For example, when the detection signal is set to 2 bits, the pixel signal SIG is converted into a digital signal of 3 bits or more (16 bits, etc.). The ADC 230 supplies the generated digital signal to the signal processing unit 212.

[0196] 2.11 Operation Example of Solid-State Image Pickup Element

[0197] Next, the operation of the solid-state image pickup element 200 according to the present embodiment will be described in detail with reference to the drawings.

[0198] 2.11.1 Timing diagram

[0199] First, an example of the operation of the solid-state image pickup element 200 will be described with reference to a timing chart. Fig.16 is a timing chart showing an example of the operation of the solid-state image pickup element according to the first embodiment.

[0200] like Fig.16 As shown in , when the control section 130 instructs to start detection of an address event at time T0, the drive circuit 211 raises the control signals OFG-R, OFG-Gr, OFG-Gb, and OFG-B applied to the gates of the OFG transistors 332 of all the light receiving sections 330 in the pixel array section 300 to a high level. In this way, the OFG transistors 332 of all the light receiving sections 330R, 330Gr, 330Gb, and 330B are turned on, and photocurrents based on the charges generated in the photoelectric conversion elements 333 of the respective light receiving sections 330R, 330Gr, 330Gb, and 330B are supplied from the respective light receiving sections 330R, 330Gr, 330Gb, and 330B to the respective address event detection sections 400R, 400Gr, 400Gb, and 400B.

[0201] In addition, during the period when the control signals OFG-R, OFG-Gr, OFG-Gb, and OFG-B are at a high level, the transmission signals TRG-R, TRG-Gr, TRG-Gb, and TRG-B applied to the gates of the transmission transistors 331 in the light receiving units 330R, 330Gr, 330Gb, and 330B are maintained at a low level. Therefore, during this period, the transmission transistors 331 of all the light receiving units 330 are in a disconnected state.

[0202] Subsequently, it is assumed that one or more address event detection sections 400 in each pixel block 310 detect the triggering of an address event during the period when the control signals OFG-R, OFG-Gr, OFG-Gb, and OFG-B are at a high level. In this case, the address event detection section 400 that detects the triggering of an address event sends a request to the arbitrator 213. However, as described above, the outputs of all address event detection sections 400 belonging to each pixel block 310 are integrated by the integration unit 150 and are input to the arbitrator 213 as a request in units of pixel blocks. For this reason, a response to the request is returned from the arbitrator 213 to all address event detection sections 400R, 400Gr, 400Gb, and 400B belonging to the pixel block 310 (hereinafter, referred to as the pixel block 310 to be read out) including the address event detection section 400 that issued the request.

[0203] For example, the address event detection units 400R, 400Gr, 400Gb, and 400B receiving the response raise the detection signal input to the drive circuit 211 and the signal processing unit 212 to a high level during the period from time T1 to time T2. Note that in this specification, it is assumed that the detection signal is a 1-bit signal indicating the detection result of the ON event.

[0204] The drive circuit 211 to which the detection signal of the high level is inputted from the address event detection sections 400R, 400Gr, 400Gb and 400B at the time T1 lowers all the control signals OFG-R, OFG-Gr, OFG-Gb and OFG-B to the low level at the subsequent time T2. In this way, the photocurrent from all the light receiving sections 330 of the pixel array section 300 to the address event detection section 400 is suspended.

[0205] In addition, the drive circuit 211 raises the selection signal SEL applied to the gate of the selection transistor 323 in the pixel signal generating section 320 of the pixel block 310 to be read out to a high level at time T2, and raises the reset signal RST applied to the gate of the reset transistor 321 of the same pixel signal generating section 320 to a high level for a certain pulse period, thereby discharging (initializing) the charge accumulated in the floating diffusion layer 324 of the pixel signal generating section 320. In this way, the voltage appearing on the vertical signal line VSL in the state where the floating diffusion layer 324 is initialized is read out as a pixel signal of a reset level (hereinafter, simply referred to as a reset level) by the ADC 230 connected to the vertical signal line VSL in the column ADC 220, and converted into a digital value.

[0206] Subsequently, at time T3 after the reset level is read out, the drive circuit 211 applies the transfer signal TRG-R of a certain pulse period to the gate of the transfer transistor 331 of, for example, the light receiving section 330R in the pixel block 310 to be read out. In this way, the charge generated in the photoelectric conversion element 333 of the light receiving section 330R is transferred to the floating diffusion layer 324 in the pixel signal generating section 320, and a voltage corresponding to the charge accumulated in the floating diffusion layer 324 appears on the vertical signal line VSL. In this way, the voltage appearing on the vertical signal line VSL is read out as a pixel signal of the signal level of the light receiving section 330R (hereinafter, simply referred to as the signal level) by the ADC 230 connected to the vertical signal line VSL in the column ADC 220, and converted into a digital value.

[0207] The signal processing unit 212 performs CDS processing to acquire the difference between the reset level and the signal level read out in this manner as a net pixel signal corresponding to the amount of received light of the photoelectric conversion element 333 .

[0208] Subsequently, at time T4 after the signal level of the light receiving section 330R is read out, the drive circuit 211 applies the transfer signal TRG-Gr of a certain pulse period to the gate of the transfer transistor 331 of, for example, the light receiving section 330Gr in the pixel block 310 to be read out. In this way, the charge generated in the photoelectric conversion element 333 of the light receiving section 330Gr is transferred to the floating diffusion layer 324 in the pixel signal generating section 320, and a voltage corresponding to the charge accumulated in the floating diffusion layer 324 appears on the vertical signal line VSL. Then, the voltage appearing on the vertical signal line VSL is read out by the ADC 230 of the column ADC 220 as the signal level of the light receiving section 330Gr, and converted into a digital value.

[0209] Thereafter, similarly, the signal levels of the light receiving portions 330Gb and 330B in the pixel block 310 to be read out are read out by the ADC 230 of the column ADC 220 and converted into digital values ​​(timings T5 and T6 ).

[0210] Thereafter, when the reading of the signal levels from all the light receiving portions 330 in the pixel block 310 to be read out is completed, the driving circuit 211 raises the control signals OFG-R, OFG-Gr, OFG-Gb and OFG-B applied to the gates of the OFG transistors 332 of all the light receiving portions 330 in the pixel array portion 300 to a high level, thereby supplying photocurrents based on the charges generated in the photoelectric conversion elements 333 of each of the light receiving portions 330R, 330Gr, 330Gb and 330B from each of the light receiving portions 330R, 330Gr, 330Gb and 330B to each of the address event detection portions 400R, 400Gr, 400Gb and 400B.

[0211] 2.11.2 Flowchart

[0212] Next, an example of the operation of the solid-state image pickup element 200 will be described with reference to a flowchart. Fig.17 1 is a flowchart showing an example of the operation of the solid-state image pickup element according to the first embodiment. For example, when a predetermined application for detecting an address event is executed, the operation is started.

[0213] like Fig.17 As shown, in this operation, first, each pixel block 310 in the pixel array section 300 detects the presence or absence of a trigger of an address event (step S901). Then, the drive circuit 211 determines whether a trigger of an address event has been detected in any pixel block 310 (step S902).

[0214] In the case where the trigger of the address event is not detected ("No" in step S902), the operation proceeds to step S904. On the other hand, in the case where the trigger of the address event is detected ("Yes" in step S902), the drive circuit 211 sequentially performs the reading of the pixel signal SIG on the unit pixels belonging to the pixel block 310 in which the trigger of the address event has been detected, thereby sequentially reading out the pixel signal SIG from each unit pixel belonging to the pixel block 310 to be read out (step S903), and the operation proceeds to step S904.

[0215] In step S904, it is determined whether to terminate the operation. If the operation is not terminated ("No" in step S904), the operation returns to step S901 and the subsequent operation is repeated. On the other hand, if the operation is terminated ("Yes" in step S904), the operation is terminated.

[0216] 2.12 Effect

[0217] As described above, in the first embodiment, a set (pixel block 310) of a plurality of (N) unit pixels receiving wavelength components for reconstructing colors is set as a unit (pixel block unit) for detecting the presence or absence of a trigger of an address event. In addition, in the case where the trigger of an address event is detected in units of pixel blocks, the pixel signal SIG is read out in units of pixel blocks. In this way, when an address event is triggered in a unit pixel of a certain wavelength component, the pixel signals SIG of all wavelength components for reconstructing the color are synchronously read out, so that the correct color can be reconstructed. As a result, an event-driven solid-state image pickup element and an image pickup device capable of acquiring a color image in which the color is correctly reconstructed can be realized.

[0218] 3. Second Implementation Method

[0219] Next, a solid-state image pickup element and an image pickup device according to a second embodiment of the present disclosure will be described in detail with reference to the drawings. Note that in the following description, similar configurations, operations, and effects to those of the above-described embodiment will be cited, and repeated descriptions thereof will be omitted.

[0220] In the above-described first embodiment, each address event detection section 400 is provided for each light receiving section 330, and the outputs of the address event detection sections 400 belonging to the same pixel block 310 are integrated by the integration unit 150, so that a request in units of pixel blocks is input to the arbiter 213. On the other hand, in the second embodiment, a case where a common address event detection section 400 is provided for all light receiving sections 330 belonging to the same pixel block will be described by giving an example.

[0221] In the second embodiment, for example, the configuration example of the image pickup device, the configuration example of the solid-state image pickup element, the stacked configuration example of the solid-state image pickup element, the functional configuration example of the solid-state image pickup element, the configuration example of the pixel array section, and the example of the pixel block may be similar to those in the first embodiment. Figures 1 to 8 However, in this embodiment, the reference numeral of the pixel block is set to 510 for convenience of explanation.

[0222] 3.1 Detection of address event triggering

[0223] In the present embodiment, as described above, a common address event detection section 400 is provided for all light receiving sections 330 belonging to the same pixel block 510. Therefore, in the present embodiment, a trigger of an address event is detected for each pixel block 510, and a pixel signal SIG is read out from all unit pixels belonging to the pixel block 510 in which the trigger of the address event is detected. Note that in the following description, for simplicity, an example is given for a case where a Bayer arrangement is adopted as a color filter array, and each pixel block 510 (corresponding to the pixel block 310A) includes a total of four light receiving sections 330R, 330Gr, 330Gb, and 330B of 2×2 pixels constituting a unit pattern.

[0224] Fig.18 and Fig.19 FIG. 2 is a schematic diagram showing an example of a configuration for detecting an address event according to the present embodiment. Fig.18 As shown, for example, each of the plurality of light receiving portions 330R, 330Gr, 330Gb, and 330B included in the pixel block 510 has the same structure as that of the reference numerals in the first embodiment. Fig. 9 On the other hand, in the present embodiment, a common address event detection unit 400 is provided for the plurality of light receiving units 330R, 330Gr, 330Gb, and 330B.

[0225] like Fig.18 and Fig.19 As shown, the photocurrents output from the respective light receiving portions 330R, 330Gr, 330Gb, and 330B are integrated by the integration unit 250 and input to the common address event detection portion 400. In the case where the sum of the photocurrents input from the light receiving portions 330R, 330Gr, 330Gb, and 330B belonging to the same pixel block 510 or the amount of change in the sum exceeds a predetermined threshold, the address event detection portion 400 outputs a request for reading out the pixel signal SIG to the arbitrator 213. In this way, in the present embodiment, in the case where the sum of the photocurrents input from the light receiving portions 330R, 330Gr, 330Gb, and 330B belonging to the pixel block 510 or the amount of change in the sum exceeds a predetermined threshold, a request for reading out the pixel signal SIG from the four corresponding unit pixels belonging to the pixel block 510 is input to the arbitrator 213.

[0226] 3.2 Example of pixel block structure

[0227] Next, a configuration example of a pixel block will be described. Fig. 20 1 is a circuit diagram showing a schematic configuration example of a pixel block according to the second embodiment. Fig. 20 As shown, in the pixel block 510 according to the present embodiment, in contrast to the reference pixel block 510 in the first embodiment, Fig.11 In a configuration similar to the configuration of the pixel block 310 described above, a plurality of address event detection sections 400R, 400Gr, 400Gb, and 400B provided one-to-one for each light receiving section are replaced by a common address event detection section 400. In addition, the outputs of the light receiving sections 330R, 330Gr, 330Gb, and 330B are integrated by the integration unit 250 and input to the address event detection section 400.

[0228] In each of the light receiving sections 330R, 330Gr, 330Gb, and 330B, the OFG transistor 332 outputs an electrical signal generated by the photoelectric conversion element 333 according to the control signal OFG. The electrical signals (photocurrents) output from the light receiving sections 330R, 330Gr, 330Gb, and 330B are integrated by the integration unit 250 and supplied to the address event detection section 400.

[0229] When detecting the trigger of the address event based on the integrated electrical signal, the address event detection section 400 outputs a request to the arbitrator 213. In this way, the request is input to the arbitrator 213 in units of pixel blocks.

[0230] When a request in units of pixel blocks is input, the arbitrator 213 arbitrates the request from each pixel block 510, and sends a predetermined response to the pixel block 510 that issued the request based on the arbitration result. The pixel block 510 that receives the response supplies a detection signal (address event detection signal) indicating the presence or absence of a trigger of an address event to the drive circuit 211 and the signal processing unit 212.

[0231] The driving circuit 211 turns off the OFG transistor 332 in all the light receiving parts 330R, 330Gr, 330Gb, and 330B belonging to the pixel block 510 as the supply source of the address event detection signal. In this way, the supply of the photocurrent from the light receiving parts 330R, 330Gr, 330Gb, and 330B in the pixel block 510 to the address event detection part 400 is suspended.

[0232] Subsequently, the drive circuit 211 sequentially drives the transfer transistors 331 in all the light receiving portions 330R, 330Gr, 330Gb, and 330B belonging to the pixel block 510 by the transfer signal TRG. In this way, the charges accumulated in the photoelectric conversion element 333 are sequentially transferred from all the light receiving portions 330R, 330Gr, 330Gb, and 330B of the pixel block 510 to the floating diffusion layer 324 of the pixel signal generating section 320. Then, the pixel signals SIG of the plurality of corresponding unit pixels within the pixel block 510 are sequentially output from the pixel signal generating section 320.

[0233] Since the other configurations can be similar to those in the first embodiment, Fig.11 The configuration of the pixel block 310 described above is not described, so its detailed description will be omitted here. In addition, in this embodiment, for example, the configuration example of the address event detection unit, the configuration example of the current-voltage conversion unit, the configuration example of the subtractor and the quantizer, and the configuration example of the column ADC are the same as those in the first embodiment. Figures 12 to 15 Those described are similar, so their detailed description will be omitted here.

[0234] 3.3 Operation Example of Solid-State Image Pickup Element

[0235] Next, the operation of the solid-state image pickup element 200 according to the present embodiment will be described. For example, the operation example of the solid-state image pickup element 200 according to the present embodiment may be similar to that of the reference image pickup element 200 in the first embodiment. Fig.16 and Fig.17 However, in this embodiment, during the period when the control signals OFG-R, OFG-Gr, OFG-Gb, and OFG-B are at a high level (refer to Fig.16At time T0 to T2), the photocurrent output from the light receiving parts 330R, 330Gr, 330Gb and 330B and integrated by the integration unit 250 is input to the address event detection unit 400. Therefore, in the present embodiment, the address event detection unit 400 detects the presence or absence of the trigger of the address event in units of pixel blocks based on the integrated photocurrent, and sends a request to the arbitrator 213 when the trigger of the address event is detected. Then, for example, upon receiving a predetermined response from the arbitrator 213, the address event detection unit 400 raises the detection signal input to the drive circuit 211 and the signal processing unit 212 to a high level during the period from time T1 to T2.

[0236] Since other operations can be similar to those in the first embodiment, Fig.16 and Fig.17 The operations described are simple, so their detailed description will be omitted here.

[0237] 3.4 Effect

[0238] As described above, in the second embodiment, similar to the first embodiment, a set (pixel block 310) of a plurality of (N) unit pixels receiving wavelength components for color reconstruction is set as a unit (pixel block unit) for detecting the presence or absence of a trigger of an address event, and in the case of detecting the trigger of an address event in units of pixel blocks, the pixel signal SIG is read out in units of pixel blocks. In this way, when an address event is triggered in a unit pixel of a certain wavelength component, the pixel signals SIG of all wavelength components for color reconstruction are synchronously read out, so that the correct color can be reconstructed. As a result, an event-driven solid-state image pickup element and an image pickup device capable of acquiring a color image in which the color is correctly reconstructed can be realized.

[0239] In addition, instead of the address event detection unit 400 set one-to-one for the light receiving unit 330, the second embodiment includes an address event detection unit 400 set one-to-one for the pixel block 510. In this way, by adopting a configuration in which one address event detection unit 400 is shared by multiple light receiving units 330 belonging to the same pixel block 510, the circuit scale can be reduced compared to the case in which a separate address event detection unit 400 is set for the light receiving unit 330.

[0240] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0241] 4. Third Implementation Method

[0242] Next, a solid-state image pickup element and an image pickup device according to a third embodiment of the present disclosure will be described in detail with reference to the drawings. Note that in the following description, similar configurations, operations, and effects to those of the above-described embodiment will be cited, and repeated descriptions thereof will be omitted.

[0243] In the above-described embodiment, the case where each pixel block 310 / 510 includes a combination of unit pixels that receive wavelength components for reconstructing a color to reconstruct a correct color has been described by giving an example. On the other hand, in the present embodiment, the case of reconstructing correct polarization information will be described by giving an example.

[0244] Note that the polarization information is information related to the polarization of the incident light, and may correspond to, for example, information related to the polarization state of linear polarization, circular polarization, elliptical polarization, random polarization, etc., information related to the polarization direction in the case of linear polarization, information related to the major axis or minor axis in the case of elliptical polarization, etc.

[0245] In the third embodiment, for example, a configuration example of an image pickup device, a configuration example of a solid-state image pickup element, a stacked configuration example of a solid-state image pickup element, a functional configuration example of a solid-state image pickup element, a configuration example of a pixel array section, a configuration example of an address event detection section, a configuration example of a current-voltage conversion unit, a configuration example of a subtractor and a quantizer, and a column ADC may be similar to those in the first embodiment. Figures 1 to 4 as well as Figures 12 to 15 Therefore, detailed description is omitted here.

[0246] In addition, in the third embodiment, for example, the detection of the trigger of the address event and the configuration example of the pixel block can be similar to the reference example in the first embodiment. Fig. 9 , Fig.10 and Fig.11 Those described or referenced in the second embodiment Fig.18 , Fig.19 and Fig. 20 Therefore, detailed description is omitted here.

[0247] Furthermore, for example, the operation example of the solid-state image pickup element 200 according to the third embodiment may be similar to that in the first or second embodiment. Fig.16 and Fig.17 Therefore, detailed description is omitted here.

[0248] However, in the present embodiment, for convenience of explanation, the reference numeral of the pixel block is set to 610. In addition, in the present embodiment, for reasons to be described later, the number of light receiving units 330 belonging to one pixel block 610 is set to three.

[0249] 4.1 Example of a pixel block

[0250] For example, the pixel block 610 according to the present embodiment includes a combination of unit pixels that receive polarization components for reconstructing polarization information. For example, the polarization information can be obtained by fitting a sine curve. To this end, in order to reconstruct the polarization information, at least three polarizers with different rotation angles around the optical axis of the polarization axis are required to observe the incident light.

[0251] Therefore, in this embodiment, as Fig.21 As in the pixel block 610 shown in the figure, for example, three types of polarizers 614H, 614V, and 614S having different rotation angles around the optical axis of the polarization axis are used, and the three types of polarizers 614H, 614V, and 614S are arranged in a predetermined repeating pattern relative to the plurality of light receiving portions 330 arranged in a 2D lattice pattern. In addition, in the present embodiment, a set of three unit pixels including respective repeating patterns (i.e., the three types of polarizers 614H, 614V, and 614S, respectively) are grouped into one pixel block 610. Note that in order to simplify the description, Fig.21 , the pixel signal generating section 320 and the address event detecting section 400 are omitted.

[0252] exist Fig.21 In the configuration shown, for example, the polarizer 614H is a polarizer that is set so that the polarization axis is parallel to the row direction of the light receiving section 330. Therefore, the light receiving section 630H formed by combining the polarizer 614H and the light receiving section 330 receives a polarization component parallel to the row direction of the light receiving section 330, and generates a charge corresponding to the amount of light received. In addition, for example, the polarizer 614V is a polarizer that is set so that the polarization axis is parallel to the column direction of the light receiving section 330. Therefore, the light receiving section 630V formed by combining the polarizer 614V and the light receiving section 330 receives a polarization component parallel to the column direction of the light receiving section 330, and generates a charge corresponding to the amount of light received. In addition, for example, the polarizer 614S is a polarizer that is set so that the polarization axis is inclined at a predetermined inclination relative to the row direction and the column direction of the light receiving section 330. Therefore, the light receiving section 630S formed by combining the polarizer 614S and the light receiving section 330 receives polarization components tilted at a predetermined tilt with respect to the row direction and the column direction of the light receiving section 330 , and generates charges corresponding to the amount of received light.

[0253] Notice, Fig.21The case where each pixel block 610 is grouped based on three polarizers 614H, 614V, and 614S arranged sequentially in the row direction is shown. However, the present disclosure is not limited thereto. For example, each pixel block 610 may be grouped based on a pattern in which two of the three polarizers 614H, 614V, and 614S are arranged in the row direction and the remaining one is arranged in the column direction relative to one of the other two.

[0254] 4.2 Effect

[0255] As described above, in the third embodiment, instead of the wavelength selection element (color filter 314R, 314Gr, 314Gb, 314B, etc.) used in the first and second embodiments, at least three polarizers 614H, 614V, and 614S having different rotation angles around the optical axis of the polarization axis are provided for the light receiving portion 330, and a set of unit pixels including at least one of the polarizers 614H, 614V, and 614S is grouped into a pixel block 610. In this way, similar to the above-mentioned embodiment, in the case where the triggering of the address event is detected in units of pixel blocks, the pixel signal SIG is read out in units of pixel blocks. Therefore, when the address event is triggered in the unit pixel of a certain polarization component, the pixel signals SIG of at least three polarization components for reconstructing the polarization information are synchronously read out. In this way, the correct polarization information can be reconstructed based on the pixel signal SIG read out in units of pixel blocks. As a result, an event-driven solid-state image pickup element and image pickup device can be realized that can acquire image data including information such as whether the incident light is natural light or reflected light reflected by an object, water surface, etc., or the polarization state of light from a light source.

[0256] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0257] 5. Fourth Implementation Method

[0258] The third embodiment described above shows a case where three types of polarizers 614H, 614V, and 614S having different rotation angles about the optical axis of the polarization axis are arranged in a predetermined repeating pattern with respect to a plurality of light receiving portions 330 arranged in a 2D lattice pattern, and a set of three unit pixels including respective repeating patterns (i.e., the three types of polarizers 614H, 614V, and 614S, respectively) are grouped into one pixel block 610. On the other hand, in a fourth embodiment, four types of polarizers are arranged in a predetermined repeating pattern with respect to a plurality of light receiving portions 330 arranged in a 2D lattice pattern, and a set of four unit pixels including respective repeating patterns (i.e., the four types of polarizers, respectively) are grouped into one pixel block.

[0259] In the fourth embodiment, for example, the configuration example of the image pickup device, the configuration example of the solid-state image pickup element, the stacking configuration example of the solid-state image pickup element, the functional configuration example of the solid-state image pickup element, the configuration example of the pixel array unit, the detection of the triggering of the address event, the configuration example of the pixel block, the configuration example of the address event detection unit, the configuration example of the current-voltage conversion unit, the configuration example of the subtractor and the quantizer, the configuration example of the column ADC, and the operation example of the solid-state image pickup element 200 may be similar to those described in the third embodiment, so the detailed description is omitted here. However, in this embodiment, for the convenience of description, the reference numeral of the pixel block is set to 710.

[0260] 5.1 Example of a pixel block

[0261] Fig. 22 is a schematic diagram showing an example of a pixel block according to the fourth embodiment. Note that in order to simplify the description, Fig. 22 , the pixel signal generating section 320 and the address event detecting section 400 are omitted.

[0262] like Fig. 22 As shown, the pixel block 710 according to the present embodiment has a structure in which polarizers 614H1 and 614H2 whose polarization axes are arranged in a row direction parallel to the light receiving portion 330 and polarizers 614V1 and 614V2 whose polarization axes are arranged in a column direction parallel to the light receiving portion 330 are arranged in a predetermined arrangement.

[0263] The light receiving section 630H1 formed by combining the polarizer 614H1 and the light receiving section 330 receives a polarization component parallel to the row direction of the light receiving section 330, and generates a charge corresponding to the amount of light received. The light receiving section 630H2 formed by combining the polarizer 614H2 and the light receiving section 330 receives a polarization component parallel to the row direction of the light receiving section 330, and generates a charge corresponding to the amount of light received. The light receiving section 630V1 formed by combining the polarizer 614V1 and the light receiving section 330 receives a polarization component parallel to the column direction of the light receiving section 330, and generates a charge corresponding to the amount of light received. The light receiving section 630V2 formed by combining the polarizer 614V2 and the light receiving section 330 receives a polarization component parallel to the column direction of the light receiving section 330, and generates a charge corresponding to the amount of light received.

[0264] Note that the polarization axis of polarizer 614H1 and the polarization axis of polarizer 614H2 may be parallel to each other or tilted at a predetermined angle. Similarly, the polarization axis of polarizer 614V1 and the polarization axis of polarizer 614V2 may be parallel to each other or tilted at a predetermined angle. However, assuming that in the case where the polarization axis of polarizer 614H1 and the polarization axis of polarizer 614H2 are parallel to each other, the polarization axis of polarizer 614V1 and the polarization axis of polarizer 614V2 are tilted at a predetermined angle, and in the case where the polarization axis of polarizer 614V1 and the polarization axis of polarizer 614V2 are parallel to each other, the polarization axis of polarizer 614H1 and the polarization axis of polarizer 614H2 are tilted at a predetermined angle.

[0265] 5.2 Effect

[0266] As described above, even in the case where the number of unit pixels for reconstructing polarization information is set to four, similar to the third embodiment, when an address event is triggered in a unit pixel of a certain polarization component, the pixel signals SIG of at least three polarization components for reconstructing polarization information are synchronously read out. Therefore, the correct polarization information can be reconstructed based on the pixel signal SIG read out in units of pixel blocks. As a result, an event-driven solid-state image pickup element and an image pickup device capable of acquiring image data including information on whether the incident light is natural light or whether it is reflected light reflected by an object, a water surface, etc., or the polarization state of light from a light source can be realized.

[0267] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0268] 6. Fifth Implementation Method

[0269] The wavelength selection element shown in the first or second embodiment can be combined with the polarizer shown in the third or fourth embodiment. That is, a configuration can be adopted in which a polarization component for reconstructing polarization information is obtained for each wavelength component for reconstructing color. In this way, a color image can be obtained, which includes information on whether the incident light is natural light or whether it is reflected light reflected by an object, a water surface, etc., or the polarization state of light from a light source, and in which the color is correctly reconstructed.

[0270] In the fifth embodiment, for example, the configuration example of the image pickup device, the configuration example of the solid-state image pickup element, the stacking configuration example of the solid-state image pickup element, the functional configuration example of the solid-state image pickup element, the configuration example of the pixel array unit, the detection of the triggering of the address event, the configuration example of the pixel block, the configuration example of the address event detection unit, the configuration example of the current-voltage conversion unit, the configuration example of the subtractor and the quantizer, the configuration example of the column ADC, and the operation example of the solid-state image pickup element 200 may be similar to those described in the third embodiment, so the detailed description is omitted here. However, in the present embodiment, for the convenience of description, the reference numeral of the pixel block is set to 810.

[0271] In addition, in the following description, a case where the Bayer arrangement is adopted as the color filter array and the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment are combined with the Bayer arrangement is shown. However, the present disclosure is not limited thereto, and the polarizers 614H, 614V, and 614S shown in the third embodiment, the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment, and the like may be combined with other color filter arrays such as an X-Trans (registered trademark) type arrangement or a Quad Bayer arrangement.

[0272] 6.1 Example of a pixel block

[0273] Fig.23 is a schematic diagram showing an example of a pixel block according to the fifth embodiment. Fig.23 In the figure, the light receiving unit 330, the pixel signal generating unit 320 and the address event detecting unit 400 are omitted.

[0274] like Fig.23 As shown, the pixel block 810 according to the present embodiment has a configuration in which each of the polarizers 614H1, 614V1, 614V2, and 614H2 is combined with a unit pattern 820A of a Bayer arrangement of 2×2 pixels including a red (R) color filter 314R, a green (Gr) color filter 314Gr, a green (Gb) color filter 314Gb, and a blue (B) color filter 314B.

[0275] More specifically, for example, in Fig.23 , in the upper left pixel group 830H1, the unit pattern 820A is combined with a polarizer group 840H1. The polarizer group 840H1 includes a total of four polarizers 614H1 corresponding one-to-one to the respective color filters 314R, 314Gr, 314Gb, and 314B included in the unit pattern 820A.

[0276] Similarly, in the upper right pixel group 830V1, the polarizer group 840V1 is combined with the unit pattern 820A, wherein the polarizer group 840V1 includes a total of four polarizers 614V1 corresponding to each color filter 314R, 314Gr, 314Gb, and 314B one-to-one. In addition, in the lower left pixel group 830V2, the polarizer group 840V2 is combined with the unit pattern 820A, wherein the polarizer group 840V2 includes a total of four polarizers 614V2 corresponding to each color filter 314R, 314Gr, 314Gb, and 314B one-to-one. Furthermore, in the lower right pixel group 830H2, a polarizer group 840H2 is combined with the unit pattern 820A, wherein the polarizer group 840H2 includes a total of four polarizers 614H2 corresponding one-to-one to the respective color filters 314R, 314Gr, 314Gb, and 314B.

[0277] As described above, the pixel block 810 according to the present embodiment has unit pixels, the number of which (16) is obtained by multiplying the number of color filters 314R, 314Gr, 314Gb, and 314B included in the unit pattern 820A (4) by the number of types of polarizers 614H1, 614V1, 614V2, and 614H2 combined therewith (4).

[0278] 6.2 Modification 1

[0279] Fig.24 is a schematic diagram showing an example of a pixel block according to Modification 1 of the fifth embodiment. Fig.23 The case where the polarizers 614H1, 614V1, 614V2, and 614H2 are combined one-to-one with the color filters 314R, 314Gr, 314Gb, and 314B included in the unit pattern 820A is shown. However, the present disclosure is not limited to this configuration. For example, Fig.24 As in the illustrated pixel block 910 , each of the polarizer groups 840H1 , 840V1 , 840V2 , and 840H2 respectively combined with four unit patterns 820A may be composed of one polarizer 914H1 , 914V1 , 914V2 , or 914H2 .

[0280] 6.3 Modification 2

[0281] in addition, Fig.25 1 is a schematic diagram showing an example of a pixel block according to a modification 2 of the fifth embodiment. Modification 2 shows a pixel block 1210 in the case of adopting an X-Trans (registered trademark) type arrangement as a color filter array. Note that in this specification, for the sake of clarity, the polarizers combined with the X-Trans (registered trademark) type arrangement are set to the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment. In addition, Fig.25 In order to simplify the description, the light receiving unit 330, the pixel signal generating unit 320 and the address event detecting unit 400 are omitted.

[0282] like Fig.25 As shown, for example, the pixel block 1210 based on the X-Trans (registered trademark) type arrangement includes a pixel group 1230H1 in which a polarizer group 1240H1 having 9 polarizers 614H1 is combined with a unit pattern 1220A of the X-Trans (registered trademark) type arrangement, a pixel group 1230V1 in which a polarizer group 1240V1 having 9 polarizers 614V1 is combined with a unit pattern 1220A, a pixel group 1230V2 in which a polarizer group 1240V2 having 9 polarizers 614V2 is combined with a unit pattern 1220A, and a pixel group 1230H2 in which a polarizer group 1240H2 having 9 polarizers 614H2 is combined with a unit pattern 1220A.

[0283] 6.4 Effect

[0284] As described above, by combining the wavelength selection element shown in the first or second embodiment with the polarizer shown in the third or fourth embodiment, an event-driven solid-state image pickup element or image pickup device capable of acquiring a color image can be realized, the color image including information such as whether the incident light is natural light or reflected light reflected by an object, water surface, etc., or the polarization state of light from a light source and in which the color is correctly reconstructed.

[0285] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0286] 7. Sixth Implementation Plan

[0287] In the fifth embodiment described above, the case where the polarizer is combined with the color filter without changing its arrangement is shown. On the other hand, in the sixth embodiment, for example, the case where the color filter is combined with the polarizer without changing its repeated pattern will be described by giving an example.

[0288] Note that in the following description, a case where a Bayer arrangement is adopted as a color filter array and the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment are combined with the Bayer arrangement is shown. However, the present disclosure is not limited thereto, and the polarizers 614H, 614V, and 614S shown in the third embodiment, the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment, and the like may be combined with other color filter arrays such as an X-Trans (registered trademark) type arrangement or a Quad Bayer arrangement.

[0289] 7.1 Example of a pixel block

[0290] Fig.26 is a schematic diagram showing an example of a pixel block according to the sixth embodiment. Fig.26 In the figure, the light receiving unit 330, the pixel signal generating unit 320 and the address event detecting unit 400 are omitted.

[0291] like Fig.26 As shown in FIG. 1 , the pixel block 1010 according to the present embodiment has a configuration in which each of the color filters 314R, 314Gr, 314Gb, and 314B included in the unit pattern of the Bayer arrangement is divided into four parts. Note that, for example, a configuration example in which each of the color filters 314R, 314Gr, 314Gb, and 314B included in the unit pattern of the Bayer arrangement is divided into four parts corresponds to a configuration similar to Figure 7 The color filter array of the Quad Bayer arrangement is shown.

[0292] exist Fig.26 In the embodiment, for example, in the upper left pixel group 1030R corresponding to the color filter of red (R) in the unit pattern of the Bayer arrangement, the polarizer group 1040A is combined with the color filter group 1020R, wherein the polarizer group 1040A includes four polarizers 614H1, 614V1, 614V2, and 614H2 corresponding one-to-one to the color filter 314R, and the color filter group 1020R includes a total of four red (R) color filters 314R of 2×2 pixels. For example, the arrangement (repeating pattern) of the polarizers 614H1, 614V1, 614V2, and 614H2 in the polarizer group 1040A may be similar to that of the fourth embodiment described above.

[0293] Similarly, in the upper right pixel group 1030Gr corresponding to the color filter of green (Gr) in the unit pattern of the Bayer arrangement, the polarizer group 1040A is combined with the color filter group 1020Gr, wherein the color filter group 1020Gr includes a total of four green (Gr) color filters 314Gr of 2×2 pixels. In addition, in the lower left pixel group 1030Gb corresponding to the color filter of green (Gb) in the unit pattern of the Bayer arrangement, the polarizer group 1040A is combined with the color filter group 1020Gb, wherein the color filter group 1020Gb includes a total of four green (Gb) color filters 314Gb of 2×2 pixels. In addition, in lower right pixel group 1030B corresponding to the green (Gb) color filter in the unit pattern of the Bayer arrangement, polarizer group 1040A is combined with color filter group 1020B including a total of four blue (B) color filters 314B of 2×2 pixels.

[0294] 7.2 Modification 1

[0295] Fig. 27is a schematic diagram showing an example of a pixel block according to Modification 1 of the sixth embodiment. Fig.26 The case where each color filter arranged in a predetermined color filter array (for example, a Bayer arrangement) is divided into a plurality of parts, the number of which corresponds to the number of polarizers to be combined therewith. However, the present disclosure is not limited to this configuration. For example, Fig. 27 As in the illustrated pixel block 1110 , each color filter 314R, 314Gr, 314Gb, and 314B may not be segmented and its size may be changed to combine the polarizer group 1040A with each color filter 314R, 314Gr, 314Gb, and 314B.

[0296] 7.3 Modification 2

[0297] in addition, Fig.28 1 is a schematic diagram showing an example of a pixel block according to a modification 2 of the sixth embodiment. Modification 2 shows a pixel block 1310 in the case of adopting an X-Trans (registered trademark) type arrangement as a color filter array. Note that in this specification, for the sake of clarity, the polarizers combined with the X-Trans (registered trademark) type arrangement are set to the polarizers 614H1, 614V1, 614V2, and 614H2 shown in the fourth embodiment. In addition, in Fig.28 In order to simplify the description, the light receiving unit 330, the pixel signal generating unit 320 and the address event detecting unit 400 are omitted.

[0298] like Fig.28 As shown, for example, the pixel block 1310 based on the X-Trans (registered trademark) type arrangement has a structure in which each color filter 314R, 314G and 314B in the unit pattern 1220A of the X-Trans (registered trademark) type arrangement is divided into a plurality of parts, the number of which (4) corresponds to the number of polarizers 614H1, 614V1, 614V2 and 614H2 to be combined therewith.

[0299] Therefore, in Fig.28 For example, in each of the upper left, upper right, middle, lower left and lower right pixel groups 1330G1, 1330G2, 1330G3, 1330G4 and 1330G5 of the color filter corresponding to green (G) in the unit pattern of the X-Trans (registered trademark) type arrangement, the polarizer group 1040A is combined with the color filter group 1320G, wherein the polarizer group 1040A includes four polarizers 614H1, 614V1, 614V2 and 614H2 corresponding one-to-one to the color filter 314G, and the color filter group 1320G includes 2×2 pixels of the color filter 314G.

[0300] Similarly, in each of the upper middle and lower pixel groups 1330B1 and 1330B2 corresponding to the blue (B) color filter in the unit pattern, the polarizer group 1040A is combined with the color filter group 1320B, wherein the color filter group 1320B includes a total of four blue (B) color filters 314B of 2×2 pixels. In addition, in each of the left middle and right middle pixel groups 1330R1 and 1330R2 corresponding to the red (R) color filter in the unit pattern, the polarizer group 1040A is combined with the color filter group 1320R, wherein the color filter group 1320R includes a total of four red (R) color filters 314R of 2×2 pixels.

[0301] 7.4 Effect

[0302] As described above, even in the case where a color filter is combined with a polarizer without changing its repeating pattern, similar to the fifth embodiment, an event-driven solid-state image pickup element or image pickup device capable of acquiring a color image including information such as whether the incident light is natural light or reflected light reflected by an object, a water surface, etc., or the polarization state of light from a light source and in which the color is correctly reconstructed can be realized.

[0303] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0304] 8. Seventh Implementation Plan

[0305] In addition, for example, the polarizer shown in the third or fourth embodiment may be the same as the reference polarizer shown in the first embodiment. Figure 8 The pixel block 310D shown has a structure in which the light receiving portions 330G, 330B, and 330R are provided for one pixel region 330G / B / R.

[0306] Fig.29 is a schematic diagram showing an example of a pixel block according to the seventh embodiment. Fig.29 In the figure, the light receiving unit 330, the pixel signal generating unit 320 and the address event detecting unit 400 are omitted.

[0307] like Fig.29 As shown, in the case where the light receiving portions 330G, 330B, and 330R for receiving the wavelength components for reconstructing the color are concentrated in one pixel area 330G / B / R, the light receiving portions 330G / B / R grouped into the pixel block 1410 are determined by the number of polarizers included in the repeated pattern. Fig.29As shown, in the case where the polarizers 614H1 , 614V1 , 614V2 , and 614H2 shown in the fourth embodiment are combined, the number of light receiving portions 330G / B / R grouped into the pixel block 1410 is four.

[0308] 8.1 Effect

[0309] As described above, even in the case where the light receiving portions 330G, 330B and 330R for receiving wavelength components for reconstructing colors are concentrated in one pixel area 330G / B / R, for example, by combining with the polarizer shown in the third or fourth embodiment, an event-driven solid-state image pickup element or image pickup device capable of acquiring a color image including information such as whether the incident light is natural light or reflected light reflected by an object, a water surface, etc., or the polarization state of light from a light source and in which the color is correctly reconstructed can be realized.

[0310] Since other configurations, operations, and effects may be similar to those of the above embodiment, detailed descriptions thereof will be omitted.

[0311] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above embodiments, and various modifications may be made without departing from the subject matter of the present disclosure. In addition, constituent elements according to different embodiments and modifications may be appropriately combined.

[0312] In addition, the effects of each embodiment described in this specification are merely examples and are not limiting, and other effects may be provided.

[0313] Note that the present technology can adopt the following configurations.

[0314] (1) A solid-state image pickup element comprising

[0315] Multiple light receiving parts, each of which receives light of a specific wavelength to generate an electric charge corresponding to the amount of light received,

[0316] a detection unit that detects a photocurrent based on the charge generated in at least one of the plurality of light receiving units,

[0317] a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and

[0318] A driving circuit causes the generating section to generate a voltage signal based on the charges generated in at least two of the plurality of light receiving sections, based on a detection result of the photocurrent by the detecting section.

[0319] (2) The solid-state image pickup element according to Item (1), wherein the detection section detects a current value of the photocurrent or an amount of change in the current value.

[0320] (3) The solid-state image pickup element according to item (1) or (2),

[0321] wherein the plurality of light receiving parts are grouped into pixel blocks for every at least two light receiving parts,

[0322] The detection section detects a photocurrent based on the charge generated in at least one of the light receiving sections belonging to the pixel block for each pixel block, and

[0323] The drive circuit causes the generation unit to generate a voltage signal for each pixel block based on the respective charges generated in the light receiving unit belonging to the pixel block, based on the detection result of the photocurrent for each pixel block by the detection unit.

[0324] (4) The solid-state image pickup element according to Item (3), wherein the light receiving sections belonging to each pixel block receive lights of specific wavelengths different from each other.

[0325] (5) The solid-state image pickup element according to item (4), wherein each pixel block includes a combination of light receiving portions that respectively receive wavelength components for reconstructing a color of incident light.

[0326] (6) A solid-state image pickup element according to any one of items (3) to (5), wherein each pixel block includes a first light receiving portion that receives a red wavelength component, a second light receiving portion that receives a green wavelength component, and a third light receiving portion that receives a blue wavelength component.

[0327] (7) The solid-state image pickup element according to any one of items (3) to (6),

[0328] wherein the detection unit is provided for each of the plurality of light receiving units, and

[0329] The solid-state image pickup element further includes

[0330] The integration unit integrates, for each pixel block, the detection results output from the plurality of detection units provided for the light receiving units belonging to the pixel block.

[0331] (8) The solid-state image pickup element according to any one of items (3) to (6),

[0332] The detection unit is set for each pixel block.

[0333] The solid-state image pickup element further includes

[0334] a synthesis unit that synthesizes the photocurrents output from the light receiving parts belonging to each pixel block for each pixel block, and

[0335] The detection section for each pixel block detects the photocurrent input via the integration unit.

[0336] (9) The solid-state image pickup element according to any one of Items (3) to (8), wherein the plurality of light receiving sections are arranged in a 2D lattice pattern according to a predetermined arrangement.

[0337] (10) The solid-state image pickup element according to Item (9), wherein the predetermined arrangement corresponds to any one of a Bayer arrangement, an X-Trans (registered trademark) type arrangement, and a Quad Bayer arrangement.

[0338] (11) The solid-state image pickup element according to item (9) or (10),

[0339] wherein the predetermined arrangement has a configuration in which a basic pattern obtained by combining light receiving sections for each wavelength component for reconstructing the color of incident light in a predetermined arrangement is repeatedly configured, and

[0340] The plurality of light receiving sections are grouped into the pixel blocks for each basic pattern.

[0341] (12) The solid-state image pickup element according to any one of items (1) to (11),

[0342] Each of the plurality of light receiving parts includes

[0343] a photoelectric conversion element that receives light of a specific wavelength to generate an electric charge corresponding to the amount of received light, and

[0344] A first transistor supplies the charge generated in the photoelectric conversion element to the detection unit as a photocurrent according to control from the drive circuit.

[0345] (13) The solid-state image pickup element according to item (12),

[0346] wherein each of the plurality of light receiving sections further includes a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the drive circuit, and

[0347] The generating unit includes

[0348] a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor,

[0349] a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit,

[0350] a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on the predetermined signal line, and

[0351] A fifth transistor switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit.

[0352] (14) The solid-state image pickup element according to any one of items (3) to (11),

[0353] Each of the plurality of light receiving parts further includes

[0354] A photoelectric conversion element receives light of a specific wavelength and generates an electric charge corresponding to the amount of light received.

[0355] a first transistor that supplies the charge generated in the photoelectric conversion element to the detection section as a photocurrent according to control from the drive circuit, and

[0356] a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the driving circuit;

[0357] The generating unit includes

[0358] a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor,

[0359] a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit,

[0360] a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on the predetermined signal line, and

[0361] a fifth transistor that switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit,

[0362] The detection unit detects the presence or absence of a trigger of an event based on the photocurrent, and

[0363] During the period when the first transistor of each of the multiple light receiving parts is controlled to be in the on state, when the detection part detects the trigger of an event, the driving circuit performs a control operation to turn off the first transistor of each light receiving part of the pixel block where the trigger of the event is detected, performs a control operation to turn on the fifth transistor, turns on the third transistor for a certain period, and then performs a control operation to turn on the second transistor of each light receiving part of the pixel block for a certain period according to a predetermined order.

[0364] (15) The solid-state image pickup element according to Item (13) or (14), further including a conversion unit that converts a voltage signal appearing on the predetermined signal line into a digital value corresponding to the voltage value.

[0365] (16) The solid-state image pickup element according to any one of items (1) to (15),

[0366] Each of the plurality of light receiving parts includes

[0367] a photoelectric conversion element that receives light of a specific wavelength to generate an electric charge corresponding to the amount of received light, and

[0368] A wavelength selection element that limits the wavelength of light incident on the photoelectric conversion element to the specific wavelength.

[0369] (17) The solid-state image pickup element according to any one of Items (1) to (16), further including a polarizing member provided for each of the plurality of light receiving portions.

[0370] (18) The solid-state image pickup element according to any one of items (3) to (11), further comprising

[0371] a polarizer provided for each of the plurality of light receiving parts,

[0372] The polarizers respectively arranged for at least two light receiving parts belonging to each pixel block have different rotation angles around the optical axis of the polarization axis.

[0373] (19) A solid-state image pickup element according to item (18), wherein the number of light receiving parts included in each pixel block is obtained by multiplying the number of wavelength components used to reconstruct the color of the incident light by the number of polarizers having different rotation angles around the optical axis of the polarization axis.

[0374] (20) An image pickup device comprising

[0375] Multiple light receiving parts, each of which receives light of a specific wavelength to generate an electric charge corresponding to the amount of light received,

[0376] a detection unit that detects a photocurrent based on the charge generated in at least one of the plurality of light receiving units,

[0377] a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and

[0378] A driving circuit causes the generating section to generate a voltage signal based on the charges generated in at least two of the plurality of light receiving sections, based on a detection result of the photocurrent by the detecting section.

[0379] (21) A solid-state image pickup element comprising

[0380] Multiple light receiving parts, each light receiving part receives light with a specific polarization direction to generate an electric charge corresponding to the amount of light received,

[0381] a detection unit that detects a photocurrent based on the charge generated in at least one of the plurality of light receiving units,

[0382] a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and

[0383] A driving circuit causes the generating section to generate a voltage signal based on the charges generated in at least two of the plurality of light receiving sections, based on a detection result of the photocurrent by the detecting section.

[0384] (22) The solid-state image pickup element according to Item (21), wherein the detection section detects a current value of the photocurrent or an amount of change in the current value.

[0385] (23) The solid-state image pickup element according to item (21) or (22),

[0386] wherein the plurality of light receiving parts are grouped into pixel blocks for every at least two light receiving parts,

[0387] The detection section detects a photocurrent based on the charge generated in at least one of the light receiving sections belonging to the pixel block for each pixel block, and

[0388] The drive circuit causes the generation unit to generate a voltage signal for each pixel block based on the respective charges generated in the light receiving unit belonging to the pixel block, based on the detection result of the photocurrent for each pixel block by the detection unit.

[0389] (24) The solid-state image pickup element according to item (23), wherein the light receiving sections belonging to each pixel block receive light of specific polarization directions different from each other.

[0390] (25) The solid-state image pickup element according to item (24), wherein each pixel block includes a combination of light receiving portions that respectively receive light of a specific polarization direction for reconstructing polarization information of incident light.

[0391] (26) A solid-state image pickup element according to any one of items (23) to (25), wherein each pixel block includes a first light receiving portion for receiving light in a first polarization direction, a second light receiving portion for receiving light in a second polarization direction, and a third light receiving portion for receiving light in a third polarization direction.

[0392] (27) The solid-state image pickup element according to any one of items (23) to (26),

[0393] wherein the detection unit is provided for each of the plurality of light receiving units, and

[0394] The solid-state image pickup element further includes

[0395] The integration unit integrates, for each pixel block, the detection results output from the plurality of detection units provided for the light receiving units belonging to the pixel block.

[0396] (28) The solid-state image pickup element according to any one of items (23) to (26),

[0397] The detection unit is set for each pixel block.

[0398] The solid-state image pickup element further includes

[0399] a synthesis unit that synthesizes the photocurrents output from the light receiving parts belonging to each pixel block for each pixel block, and

[0400] The detection section for each pixel block detects the photocurrent input via the integration unit.

[0401] (29) The solid-state image pickup element according to any one of Items (23) to (28), wherein the plurality of light receiving portions are arranged in a 2D lattice pattern according to a predetermined arrangement.

[0402] (30) The solid-state image pickup element according to item (29),

[0403] wherein the predetermined arrangement has a configuration in which a repeated pattern formed by combining light receiving sections for each polarization direction for reconstructing polarization information of incident light in a predetermined arrangement is repeatedly configured, and

[0404] The plurality of light receiving sections are grouped into the pixel blocks for each repeated pattern.

[0405] (31) The solid-state image pickup element according to any one of items (21) to (30),

[0406] Each of the plurality of light receiving parts includes

[0407] a photoelectric conversion element that receives light to generate electric charge corresponding to the amount of received light, and

[0408] A first transistor supplies the charge generated in the photoelectric conversion element to the detection unit as a photocurrent according to control from the drive circuit.

[0409] (32) The solid-state image pickup element according to item (31),

[0410] wherein each of the plurality of light receiving sections further includes a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the drive circuit, and

[0411] The generating unit includes

[0412] a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor,

[0413] a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit,

[0414] a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on the predetermined signal line, and

[0415] A fifth transistor switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit.

[0416] (33) The solid-state image pickup element according to any one of items (23) to (30),

[0417] Each of the plurality of light receiving parts further includes

[0418] A photoelectric conversion element receives light to generate electric charge corresponding to the amount of light received,

[0419] a first transistor that supplies the charge generated in the photoelectric conversion element to the detection section as a photocurrent according to control from the drive circuit, and

[0420] a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the driving circuit;

[0421] The generating unit includes

[0422] a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor,

[0423] a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit,

[0424] a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on the predetermined signal line, and

[0425] a fifth transistor that switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit,

[0426] The detection unit detects the presence or absence of a trigger of an event based on the photocurrent, and

[0427] During the period when the first transistor of each of the multiple light receiving parts is controlled to be in the on state, when the detection part detects the trigger of an event, the driving circuit performs a control operation to turn off the first transistor of each light receiving part of the pixel block where the trigger of the event is detected, performs a control operation to turn on the fifth transistor, turns on the third transistor for a certain period, and then performs a control operation to turn on the second transistor of each light receiving part of the pixel block for a certain period according to a predetermined order.

[0428] (34) The solid-state image pickup element according to item (32) or (33), further including a conversion unit that converts the voltage signal appearing on the predetermined signal line into a digital value corresponding to the voltage value.

[0429] (35) The solid-state image pickup element according to any one of items (21) to (34),

[0430] Each of the plurality of light receiving parts includes

[0431] a photoelectric conversion element that receives light to generate electric charge corresponding to the amount of received light, and

[0432] A polarizer that limits the polarization direction of light incident on the photoelectric conversion element to the specific polarization direction.

[0433] (36) The solid-state image pickup element according to any one of items (23) to (35),

[0434] Each of the plurality of light receiving sections has a configuration in which the light receiving sections for each wavelength component for reconstructing the color of the incident light are arranged in a 2D lattice pattern according to a predetermined arrangement.

[0435] (37) The solid-state image pickup element according to Item (36), wherein the predetermined arrangement corresponds to any one of a Bayer arrangement, an X-Trans (registered trademark) type arrangement, and a Quad Bayer arrangement.

[0436] (38) The solid-state image pickup element according to item (36) or (37), further including a wavelength selection element provided for each of the plurality of light receiving portions to transmit light of each wavelength component.

[0437] (39) A solid-state image pickup element according to any one of items (36) to (38), wherein the number of light receiving parts included in each pixel block is obtained by multiplying the number of polarizers used to reconstruct the polarization information of the incident light by the number of wavelength components used to reconstruct the color of the incident light.

[0438] (40) An image pickup device comprising

[0439] Multiple light receiving parts, each light receiving part receives light with a specific polarization direction to generate an electric charge corresponding to the amount of light received,

[0440] a detection unit that detects a photocurrent based on the charge generated in at least one of the plurality of light receiving units,

[0441] a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and

[0442] A driving circuit causes the generating section to generate a voltage signal based on the charges generated in at least two of the plurality of light receiving sections, based on a detection result of the photocurrent by the detecting section.

[0443] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

[0444] [reference numerals list]

[0445] 100 Image pickup device

[0446] 110 Imaging lens

[0447] 120 Records Department

[0448] 130 Control Department

[0449] 139, 209 signal line

[0450] 150, 250 comprehensive units

[0451] 200 Solid-state image pickup element

[0452] 201 Light receiving chip

[0453] 202 Detection Chip

[0454] 211 drive circuit

[0455] 212 Signal Processing Unit

[0456] 213 Arbitrator

[0457] 220 columns ADC

[0458] 230 ADC

[0459] 300 pixel array

[0460] 310, 310A, 310B, 310C, 310D, 510, 610, 710, 810, 910, 1010, 1110, 1210, 1310, 1410 pixel blocks

[0461] 314R, 314Gr, 314Gb, 314B color filters

[0462] 320 pixel signal generating unit

[0463] 321 Reset transistor

[0464] 322 Amplifier Transistor

[0465] 323 Select transistor

[0466] 324 Floating Diffusion Layer

[0467] 330, 330R, 330G, 330Gr, 330Gb, 330B, 630H, 630H1, 630H2, 630V, 630V1, 630V2, 630S light receiving part

[0468] 330G / B / R pixel area

[0469] 331 Pass transistor

[0470] 332 OFG transistor

[0471] 333 Photoelectric conversion element

[0472] 400, 400R, 400Gr, 400Gb, 400B Address Event Detection Unit

[0473] 410 Current-voltage conversion unit

[0474] 411, 413 N-type transistor

[0475] 412 P-type transistor

[0476] 420 Buffer

[0477] 430 Subtractor

[0478] 431, 433 Capacitor

[0479] 432 Inverter

[0480] 434 Switch

[0481] 440 Quantizer

[0482] 441 Comparator

[0483] 450 Transmission Unit

[0484] 614H, 614H1, 614H2, 614V, 614V1, 614V2, 614S, 914H1, 914H2, 914V1, 914V2 Polarizer

[0485] 820A, 1220A unit pattern

[0486] 830H1, 830H2, 830V1, 830V2, 1030R, 1030Gr, 1030Gb, 1030B, 1230H1, 1230H2, 1230V1, 1230V2, 1330R1, 1330R2, 1330G1~1330G5, 1330B1, 1330B2 Pixel Group

[0487] 840H1, 840H2, 840V1, 840V2, 1040A, 1240H1, 1240H2, 1240V1, 1240V2 Polarizer Set

[0488] 1020R, 1020Gr, 1020Gb, 1020B, 1320R, 1320G, 1320B Color Filter Set

[0489] SIG Pixel Signal

[0490] VSL Vertical Signal Line

Claims

1. A solid-state image pickup element comprising: a plurality of light receiving sections, each of which receives light of a specific wavelength to generate a charge corresponding to the amount of light received and generates a photocurrent based on the charge, the plurality of light receiving sections being grouped into a pixel block for every at least two light receiving sections, an integrating unit that integrates the photocurrent output from the light receiving portion belonging to the pixel block, a detection unit, which is provided for each of the pixel blocks and detects the integrated photocurrent, a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and A driving circuit causes the generating unit to generate a voltage signal for the pixel block based on the integrated photocurrent detected by the detecting unit. 2 . The solid-state image pickup element according to claim 1 , wherein the detection section detects a current value of the photocurrent or an amount of change in the current value. 3 . The solid-state image pickup element according to claim 1 , wherein the light receiving sections belonging to each of the pixel blocks receive lights of specific wavelengths different from each other. 4 . The solid-state image pickup element according to claim 3 , wherein each of the pixel blocks includes a combination of light receiving portions that respectively receive wavelength components for reconstructing a color of incident light. 5 . The solid-state image pickup element according to claim 1 , wherein each of the pixel blocks includes a first light receiving portion that receives a red wavelength component, a second light receiving portion that receives a green wavelength component, and a third light receiving portion that receives a blue wavelength component. 6 . The solid-state image pickup element according to claim 1 , wherein the plurality of light receiving sections are arranged in a 2D lattice pattern according to a predetermined arrangement. 7 . The solid-state image pickup element according to claim 6 , wherein the predetermined arrangement corresponds to any one of a Bayer arrangement, an X-Trans type arrangement, and a Quad Bayer arrangement.

8. The solid-state image pickup element according to claim 6, wherein the predetermined arrangement has a configuration in which a basic pattern obtained by combining light receiving sections for each wavelength component for reconstructing the color of incident light in a predetermined arrangement is repeatedly configured, and The plurality of light receiving sections are grouped into the pixel blocks for each basic pattern.

9. The solid-state image pickup element according to claim 1, Each of the plurality of light receiving parts includes a photoelectric conversion element that receives light of a specific wavelength to generate an electric charge corresponding to the amount of received light, and A first transistor supplies the charge generated in the photoelectric conversion element to the detection unit as a photocurrent according to control from the drive circuit.

10. The solid-state image pickup element according to claim 9, wherein each of the plurality of light receiving sections further includes a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the drive circuit, and The generating unit includes a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor, a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit, a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on a predetermined signal line, and A fifth transistor switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit.

11. The solid-state image pickup element according to claim 1, Each of the plurality of light receiving parts further includes A photoelectric conversion element receives light of a specific wavelength and generates an electric charge corresponding to the amount of light received. a first transistor that supplies the charge generated in the photoelectric conversion element to the detection section as a photocurrent according to control from the drive circuit, and a second transistor that transfers the charge generated in the photoelectric conversion element to the generating section according to control from the driving circuit; The generating unit includes a floating diffusion layer that accumulates charges transferred from any one of the plurality of light receiving portions via the second transistor, a third transistor that discharges the charge accumulated in the floating diffusion layer according to control from the drive circuit, a fourth transistor that causes a voltage signal corresponding to the charge amount of the charges accumulated in the floating diffusion layer to appear on a predetermined signal line, and a fifth transistor that switches connection between the fourth transistor and the predetermined signal line according to control from the drive circuit, The detection unit detects the presence or absence of a trigger of an event based on the photocurrent, and During the period when the first transistor of each of the multiple light receiving parts is controlled to be in the on state, when the detection part detects the trigger of an event, the driving circuit performs a control operation to turn off the first transistor of each light receiving part of the pixel block where the trigger of the event is detected, performs a control operation to turn on the fifth transistor, turns on the third transistor for a certain period, and then performs a control operation to turn on the second transistor of each light receiving part of the pixel block for a certain period according to a predetermined order. 12 . The solid-state image pickup element according to claim 10 , further comprising a conversion unit that converts a voltage signal appearing on a predetermined signal line into a digital value corresponding to the voltage value.

13. The solid-state image pickup element according to claim 1, Each of the plurality of light receiving parts includes a photoelectric conversion element that receives light of a specific wavelength to generate an electric charge corresponding to the amount of received light, and A wavelength selection element that limits the wavelength of light incident on the photoelectric conversion element to the specific wavelength. 14 . The solid-state image pickup element according to claim 1 , further comprising a polarizing member provided for each of the plurality of light receiving portions.

15. The solid-state image pickup element according to claim 1, further comprising a polarizer provided for each of the plurality of light receiving parts, The polarizers respectively arranged for at least two light receiving parts belonging to each pixel block have different rotation angles around the optical axis of the polarization axis.

16. A solid-state image pickup element according to claim 15, wherein the number of light receiving portions included in each pixel block is obtained by multiplying the number of wavelength components for reconstructing the color of incident light by the number of polarizers having different rotation angles around the optical axis of the polarization axis.

17. An image pickup device comprising a plurality of light receiving sections, each of which receives light of a specific wavelength to generate a charge corresponding to the amount of light received and generates a photocurrent based on the charge, the plurality of light receiving sections being grouped into a pixel block for every at least two light receiving sections, an imaging lens that converges incident light onto the surfaces of the plurality of light receiving portions, an integrating unit that integrates the photocurrent output from the light receiving portion belonging to the pixel block, a detection unit, which is provided for each of the pixel blocks and detects the integrated photocurrent, a generating section that generates a voltage signal based on the charge generated in each of the plurality of light receiving sections, and A driving circuit causes the generating unit to generate a voltage signal for the pixel block based on the integrated photocurrent detected by the detecting unit.

Images