Electronic device

Abstract

The present invention provides an electronic device capable of performing various displays. The present invention provides an electronic device capable of performing various operations. The electronic device includes a display device and first to third surfaces. The first surface includes a region arranged to contact the second surface, the second surface includes a region arranged to contact the third surface, and the first surface includes a region arranged to face the third surface. The display device includes first to third display regions. The first display region includes a region arranged to overlap the first surface, the second display region includes a region arranged to overlap the second surface, and the third display region includes a region arranged to overlap the third surface. The area of the first display region is larger than that of the third display region.

Description

[0001] This application is a divisional application of the patent application for invention with the application number 201480064843.6 (PCT / IB2014 / 066089), the application date of November 17, 2014 (the entry date into the national phase is May 27, 2016), and the invention title of "Electronic Device and Its Driving Method". Technical Field

[0002] One aspect of the present invention relates to a display device capable of displaying on a curved surface. Other aspects of the present invention relate to a display device capable of displaying on multiple different surfaces. Other aspects of the present invention relate to an electronic device, a light-emitting device, a lighting device including a display device capable of displaying on a curved surface, or a manufacturing method thereof. Other aspects of the present invention relate to an electronic device, a light-emitting device, a lighting device capable of displaying on multiple different surfaces, or a manufacturing method thereof.

[0003] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification, etc. relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, examples of the technical field of one aspect of the invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, liquid crystal display devices, power storage devices, storage devices, driving methods of these devices, or manufacturing methods of these devices. Background Art

[0004] In recent years, display devices have been expected to be applied to various uses and are required to be diversified. For example, the thinning, high performance, and multi-functionality of portable information terminals such as smartphones or tablet terminals equipped with touch panels have advanced rapidly.

[0005] Patent Document 1 discloses a flexible active matrix light-emitting device in which an organic EL element and a transistor serving as a switching element are provided on a thin film substrate.

[0006] [Reference]

[0007] [Patent Document]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention

[0009] One of the objectives of one embodiment of the present invention is to provide a novel electronic device. Other objectives of one embodiment of the present invention are to provide an electronic device capable of performing various displays. Other objectives of one embodiment of the present invention are to provide an electronic device capable of performing various operations. Other objectives of one embodiment of the present invention are to provide a display device (display panel) that can be used for such an electronic device. Other objectives of one embodiment of the present invention are to provide a novel display device and the like.

[0010] Other objectives of one embodiment of the present invention are to provide an electronic device and the like that can capture appropriate images. Other objectives of one embodiment of the present invention are to provide an electronic device and the like that can irradiate light on a subject to be photographed. Other objectives of one embodiment of the present invention are to provide an electronic device and the like that are easy to replace the battery. Other objectives of one embodiment of the present invention are to provide an electronic device and the like that are easy to operate. Other objectives of one embodiment of the present invention are to provide an electronic device and the like in which a subject can confirm the shooting status. Other objectives of one embodiment of the present invention are to provide an electronic device and the like that are easy to perform wireless communication. Other objectives of one embodiment of the present invention are to provide an electronic device and the like with good sound quality. Other objectives of one embodiment of the present invention are to provide an electronic device and the like that can be folded or unfolded.

[0011] Note that the description of the above objectives does not prevent the existence of other objectives. Note that one embodiment of the present invention does not need to achieve all of the above objectives. Objectives other than the above are obvious from the description in the specification and the like, and can be derived from the description.

[0012] One embodiment of the present invention is an electronic device including: a display device; and first to third surfaces. The first surface includes a region in contact with the second surface. The second surface includes a region in contact with the third surface. The first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface. The second display region includes a region overlapping with the second surface. The third display region includes a region overlapping with the third surface. The area of the first display region is larger than that of the third display region.

[0013] Another embodiment of the present invention is an electronic device including: a display device; an input device; and first to third surfaces. The first surface includes a region in contact with the second surface. The second surface includes a region in contact with the third surface. The first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface. The second display region includes a region overlapping with the second surface. The third display region includes a region overlapping with the third surface. The input device includes a region overlapping with the first display region, a region overlapping with the second display region, and a region overlapping with the third display region. The area of the first display region is larger than that of the third display region.

[0014] Another aspect of the present invention is an electronic device, comprising: a display device; and first to third surfaces. The first surface includes an area in contact with the second surface. The second surface includes an area in contact with the third surface. The first surface includes an area opposite to the third surface. The display device includes first to third display areas. The first display area includes an area overlapping with the first surface. The second display area includes an area overlapping with the second surface. The third display area includes an area overlapping with the third surface. The display device functions as a touch sensor in the first to third display areas. The area of the first display area is larger than that of the third display area.

[0015] Another aspect of the present invention is an electronic device, comprising: a display device; an image sensor; and first to third surfaces. The first surface includes an area in contact with the second surface. The second surface includes an area in contact with the third surface. The first surface includes an area opposite to the third surface. The display device includes first to third display areas. The first display area includes an area overlapping with the first surface. The second display area includes an area overlapping with the second surface. The third display area includes an area overlapping with the third surface. The display device is capable of displaying a first image obtained by the image sensor in the first display area. The display device is capable of displaying a second image obtained by the image sensor in the second display area.

[0016] Another aspect of the present invention is an electronic device having the above structure, wherein the second surface is a side surface.

[0017] Another aspect of the present invention is a driving method for an electronic device including a display device, an image sensor, and first to third surfaces. The first surface includes an area in contact with the second surface. The second surface includes an area in contact with the third surface. The first surface includes an area opposite to the third surface. The display device includes first to third display areas. The first display area includes an area overlapping with the first surface. The second display area includes an area overlapping with the second surface. The third display area includes an area overlapping with the third surface. The driving method of the electronic device includes displaying a first image obtained by the image sensor in the first display area and displaying a second image obtained by the image sensor in the second display area.

[0018] Another aspect of the present invention is a driving method for an electronic device having the above structure, wherein the second surface is a side surface.

[0019] Note that, in this specification, the display device includes the following modules within its scope: a module in which a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is installed in a light-emitting panel (light-emitting device); a module in which a printed circuit board is provided at an end of the TCP; and a module in which an integrated circuit (IC) is directly mounted on a substrate formed with a display element by a chip on glass (COG) method.

[0020] According to one aspect of the present invention, a novel electronic device can be provided. According to one aspect of the present invention, an electronic device capable of performing various displays can be provided. According to one aspect of the present invention, an electronic device capable of performing various operations can be provided. According to one aspect of the present invention, a display device (display panel) applicable to such an electronic device can be provided. According to one aspect of the present invention, a novel display device or the like can be provided.

[0021] According to one aspect of the present invention, an electronic device or the like capable of capturing an appropriate image can be provided. According to one aspect of the present invention, an electronic device or the like capable of irradiating light to a subject to be photographed can be provided. According to one aspect of the present invention, an electronic device or the like with an easily replaceable battery can be provided. According to one aspect of the present invention, an electronic device or the like that is easy to operate can be provided. According to one aspect of the present invention, an electronic device or the like in which a subject can confirm the photographing state can be provided. According to one aspect of the present invention, an electronic device or the like that is easy to perform wireless communication can be provided. According to one aspect of the present invention, an electronic device or the like with good sound quality can be provided. According to one aspect of the present invention, an electronic device or the like that can be folded or unfolded can be provided.

[0022] Note that the description of the above effects does not prevent the existence of other effects. One aspect of the present invention does not need to have all of the above effects. Effects other than these are obvious from the description in the specification, drawings, claims, etc., and can be derived from the description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1A1 、 Figure 1A2 、 Figure 1B1 and Figure 1B2 show structural examples of an electronic device according to an embodiment;

[0024] Figure 2A1 、 Figure 2A2 、 Figure 2B1 and Figure 2B2 show structural examples of an electronic device according to an embodiment;

[0025] Figure 3A1 , Figure 3A2 , Figure 3B1 and Figure 3B2 illustrate structural examples of an electronic device according to an embodiment;

[0026] Figure 4A1 , Figure 4A2 , Figure 4B1 and Figure 4B2 illustrate structural examples of an electronic device according to an embodiment;

[0027] Figures 5A to 5C illustrate structural examples of an electronic device according to an embodiment;

[0028] Figures 6A to 6C illustrate structural examples of an electronic device according to an embodiment;

[0029] Figure 7A and Figure 7B illustrate structural examples of an electronic device according to an embodiment;

[0030] Figure 8A1 , Figure 8A2 , Figure 8B1 and Figure 8B2 illustrate structural examples of an electronic device according to an embodiment;

[0031] Figure 9A1 , Figure 9A2 , Figure 9B1 and Figure 9B2 illustrate structural examples of an electronic device according to an embodiment;

[0032] Figure 10A1 , Figure 10A2 , Figure 10B1 and Figure 10B2 illustrate structural examples of an electronic device according to an embodiment;

[0033] Figure 11A1 , Figure 11A2 , Figure 11B1 and Figure 11B2 illustrate structural examples of an electronic device according to an embodiment;

[0034] Figure 12A1 and Figure 12A2 illustrate structural examples of an electronic device according to an embodiment;

[0035] Figure 13A1 , Figure 13A2 and Figure 13B illustrate structural examples of an electronic device according to an embodiment;

[0036] Figure 14A1 , Figure 14A2 and Figure 14BShows a structural example of an electronic device according to an embodiment;

[0037] Figure 15A and Figure 15B Shows a structural example of an electronic device according to an embodiment;

[0038] Figure 16A1 、 Figure 16A2 、 Figure 16B1 and Figure 16B2 Shows a structural example of an electronic device according to an embodiment;

[0039] Figure 17A1 and Figure 17A2 Shows a structural example of an electronic device according to an embodiment;

[0040] Figure 18A1 、 Figure 18A2 、 Figure 18B1 and Figure 18B2 Shows a structural example of an electronic device according to an embodiment;

[0041] Figure 19A1 、 Figure 19A2 、 Figure 19B1 and Figure 19B2 Shows a structural example of an electronic device according to an embodiment;

[0042] Figure 20 Shows a structural example of an electronic device according to an embodiment;

[0043] Figure 21 Shows a structural example of an electronic device according to an embodiment;

[0044] Figure 22 Shows a structural example of an electronic device according to an embodiment;

[0045] Figures 23A to 23C Shows a structural example of an electronic device according to an embodiment;

[0046] Figures 24A to 24E Shows a structural example of an electronic device according to an embodiment;

[0047] Figures 25A to 25C Shows a structural example of an electronic device according to an embodiment;

[0048] Figures 26A to 26D Shows a structural example of an electronic device according to an embodiment;

[0049] Figures 27A to 27C Shows a structural example of an electronic device according to an embodiment;

[0050] Figures 28A to 28C Shows a structural example of a light-emitting panel according to an embodiment;

[0051] Figures 29A to 29C Shows a structural example of a light-emitting panel according to an embodiment;

[0052] Figures 30A to 30C Shows a structural example of a light-emitting panel according to an embodiment;

[0053] Figures 31A to 31C Is a cross-sectional TEM image of an oxide semiconductor and a local Fourier transform image;

[0054] Figure 32A And Figure 32B Is a diagram showing a nanobeam electron diffraction pattern of an oxide semiconductor film, Figure 32C And Figure 32D Is a diagram showing an example of a transmission electron diffraction measurement apparatus;

[0055] Figure 33A Is a diagram showing an example of a structural analysis using transmission electron diffraction measurement, Figure 33B And Figure 33C Is a diagram showing a planar TEM image. Detailed Embodiments

[0056] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in a plurality of different ways. It is easily understood by those of ordinary skill in the art that the manner and details can be changed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited only to the content described in the following embodiments shown. Note that in the structures described below, the same reference numerals are commonly used in different drawings to denote the same parts or parts having the same functions, and the detailed description thereof is omitted. In addition, when denoting parts having the same function, the same hatching is sometimes used without particularly attaching reference numerals.

[0057] Note that the content (or a part thereof) described in one embodiment can be applied to, combined with, or replaced by the other content (or a part thereof) described in that embodiment and / or the content (or a part thereof) described in one or more other embodiments.

[0058] Note that in each embodiment, the content refers to the content described using various drawings or the content described using the articles described in the specification.

[0059] Note that by combining the drawings (or a part thereof) described in one embodiment with the other parts of the drawing, the other drawings (or a part thereof) described in that embodiment and / or the drawings (or a part thereof) described in one or more other embodiments, more drawings can be constituted.

[0060] Note that in the respective drawings shown in this specification, for the sake of clear illustration, the sizes of the respective constituent elements, the thicknesses of the layers, or the regions are sometimes exaggerated. Therefore, the present invention is not necessarily limited to such dimensions.

[0061] Note that in this specification and the like, ordinal numbers such as "first" and "second" are added to avoid confusion of the constituent elements, rather than for numerical limitation.

[0062] Embodiment 1

[0063] In the present embodiment, an electronic device of one aspect of the present invention and a display device (sometimes also referred to as a display panel) that can be used for the electronic device will be described with reference to the drawings.

[0064] [Examples of Electronic Devices]

[0065] Figure 1A1 is a perspective schematic view showing the front side of the electronic device exemplified below, Figure 1A2 is a perspective schematic view showing the back side.

[0066] Figure 1A1 and Figure 1A2 The electronic device shown includes a housing 101 and a display panel 110 that can be provided on the surface (for example, the front, back, side, etc.) of the housing 101 for display. Note that a cover or resin or the like may sometimes be provided on the display panel 110 to protect the display panel from damage or breakage.

[0067] The housing 101 includes a front, a back, a first side, a second side including a region in contact with the first side, a third side including a region opposite to the first side, and a fourth side including a region opposite to the second side. Alternatively, the housing 101 includes a first side. The first side includes a region in contact with the front and / or the back. Alternatively, the housing 101 includes a second side. The second side includes a region in contact with the front and / or the back. Alternatively, the housing 101 includes a third side. The third side includes a region in contact with the front and / or the back. Alternatively, the housing 101 includes a fourth side. The fourth side includes a region in contact with the front and / or the back.

[0068] Note that the front includes a region opposite to the back.

[0069] In other words, the housing 101 includes a plurality of surfaces. For example, the housing 101 includes a front, a back, and at least four sides. Since the respective surfaces sometimes change smoothly, it is sometimes not easy to determine the boundaries of the respective surfaces. Although the "sides" are used for description, sometimes the sides include a region of a part of the front or the back.

[0070] For example, the side refers to the area that can be seen when viewed from its lateral direction (e.g., from a direction where the back or front cannot be seen). Note that it is sometimes difficult to determine the boundary in cases where the front, back, side, etc. include curved surfaces. In such cases, for example, it can sometimes be said that a certain area is part of the front (back) and also part of the side. Similarly, for example, it can sometimes be said that a certain area is part of one side and also part of another side.

[0071] For example, the side includes the area in contact with the front. Alternatively, the side includes the area in contact with the back. For example, the side includes the area in contact with other sides.

[0072] Here, for example, the front and / or the back includes a flat area. Alternatively, for example, the front and / or the back includes a curved area. For example, the side includes a curved area. Alternatively, for example, the side includes a flat area. Note that it is sometimes difficult to distinguish between the front and the back. Therefore, sometimes the front is referred to as the back, or the back is referred to as the front. Note that the front sometimes includes a display area larger than the back. Note that, for example, the area of the side is smaller than the front or the back.

[0073] Note that in addition to the above-mentioned faces, there are sometimes other faces provided. That is, the housing 101 is not a hexahedron and sometimes includes more faces. Alternatively, the housing 101 sometimes includes fewer faces than the above.

[0074] The display panel 110 includes a display area 111 provided in such a way as to have an area overlapping with the front of the housing 101. The display panel 110 includes a display area 113 provided in such a way as to have an area overlapping with one of the sides of the housing 101. The display panel 110 includes a display area 116 provided in such a way as to have an area overlapping with a partial area of the back of the housing 101. Note that here, for example, the side length of the side where the display area 113 is provided is shorter than the side where the display area 113 is not provided. For example, the area of the side where the display area 113 is provided is smaller than the side where the display area 113 is not provided. That is, for example, the side where the display area 113 is provided is a face parallel to the short-axis direction and perpendicular to the long-axis direction.

[0075] In the drawings, the boundaries of the display area 111, the display area 113, and the display area 116 are sometimes indicated by dashed lines. Note that depending on the situation or condition, the boundaries sometimes differ from the boundaries indicated by the dashed lines in the drawings.

[0076] Among the four side surfaces of the housing 101, the area including at least the area overlapping with the display panel 110 preferably has a curved surface shape. For example, it is preferable that there are no corners between the front surface and the side surfaces and between the side surfaces and the back surface, and these surfaces are continuous. The side surface is preferably a curved surface with a continuously changing inclination angle of the tangent line from the front surface to the back surface of the housing 101. In particular, the side surface preferably has a developable surface obtained by changing the planar shape without stretching or shrinking the plane. By making the side surface have such a shape, the display panel 110 can be smoothly bent. In other words, the radius of curvature when bending the display panel 110 can be increased. As a result, the burden on the display panel 110 during bending can be reduced, and thus the service life of the display panel 110 can be extended. In addition, when the side surface has such a shape, the display image on the display panel 110 appears to change smoothly. Therefore, the image can be viewed comfortably. Note that one aspect of the present invention is not limited to these.

[0077] Here, for example, the area of the display region 111 is larger than the area of the display region 116. For example, the length of one side of the display region 111 is longer than the length of one side of the display region 116. Therefore, as Figure 1B1 and Figure 1B2 shown, the area 201 can be ensured on the back surface of the housing 101. In other words, the display region 116 and the area 201 are provided on the back surface of the housing 101. For example, the display region 116 is not provided in the area 201. Therefore, components with various functions can be arranged in the area 201.

[0078] For example, the area of the display region 116 is 10% or more and 90% or less of the area of the display region 111. Preferably, the area of the display region 116 is, for example, 30% or more and 70% or less of the area of the display region 111.

[0079] For example, the length of one side of the display region 116 is 10% or more and 90% or less of the length of one side of the display region 111. Preferably, the length of one side of the display region 116 is, for example, 30% or more and 70% or less of the length of one side of the display region 111.

[0080] Note that on the surface of the housing 101 (for example, the front surface, the back surface, or the side surface), in addition to the display panel 110, there may be provided hardware buttons, external connection terminals, image sensors, infrared sensors, microphones, or speakers, etc.

[0081] Although Figure 1A1 、 Figure 1A2 shows a case where one side surface of the housing 101 is used as the display region, the display region may also overlap with other side surfaces.

[0082] For example, Figure 2A1 and Figure 2A2Shows a structural example in which a display area 115 is also provided. The display area 115 includes an area overlapping the side surface opposite to the display area 113. Here, Figure 2A1 is a perspective schematic view showing the front side of the electronic device, Figure 2A2 is a perspective schematic view showing the back side. Figure 2B1 and Figure 2B2 show a case where an area 201 is provided.

[0083] As another example, Figure 3A1 and Figure 3A2 show a structural example in which the display panel 110 includes a display area 111, a display area 116, and a display area 112. Here, the display area 112 is provided in such a way as to include an area overlapping one of the side surfaces of the housing 101. Here, the length of one side of the side surface where the display area 112 is provided is longer than the length of one side of the side surface where the display area 112 is not provided (for example, the side surface where the display area 113 is provided in Figure 1A1 ). For example, the area of the side surface where the display area 112 is provided is larger than the side surface where the display area 112 is not provided. That is, for example, the side surface where the display area 112 is provided is a surface parallel to the long axis direction and perpendicular to the short axis direction. Here, Figure 3A1 is a perspective schematic view showing the front side of the electronic device, Figure 3A2 is a perspective schematic view showing the back side. Figure 3B1 and Figure 3B2 show a case where an area 201 is provided.

[0084] Furthermore, as another example, Figure 4A1 and Figure 4A2 show a structural example in which a display area 114 including an area overlapping the side surface opposite to the display area 112 is also provided. Here, Figure 4A1 is a perspective schematic view showing the front side of the electronic device, Figure 4A2 is a perspective schematic view showing the back side. Figure 4B1 and Figure 4B2 show a case where an area 201 is provided.

[0085] As another example, Figures 5A to 5CA structural example is shown in which the display panel 110 includes a display area 111, a display area 116, a display area 112, and a display area 113. Here, the display area 112 is arranged to include an area overlapping one of the sides of the housing 101. The display area 113 is arranged to include an area overlapping one of the other sides of the housing 101. Here, for example, the length of one side of the side where the display area 112 is provided is longer than the length of one side of the side where the display area 113 is provided. For example, the area of the side where the display area 112 is provided is larger than the area of the side where the display area 113 is provided. Here, Figure 5A An example of a perspective schematic view of the front side of the electronic device is shown, Figure 5B An example of a perspective schematic view of the back side thereof is shown. Figure 5C Examples different from Figure 5B are shown. Figures 6A to 6C An example where the area 201 is provided is shown.

[0086] By adopting such a structure, it is possible to perform displays not only on the surface parallel to the front of the housing but also on the side and back surfaces of the housing. It is particularly preferable to arrange the display areas along two or more sides of the housing because the diversity of the displays is improved.

[0087] The display area 111 arranged along the front of the housing 101, the display area 116 arranged along the back of the housing 101, and each display area arranged along the side of the housing 101 can be used as independent display areas to display different images, etc., or an image, etc. can be displayed on two or more of the above display areas. For example, continuous images can also be displayed on the display area 111 arranged along the front of the housing 101, the display area 112 arranged along the side of the housing 101, the display area 116 arranged along the back of the housing 101, etc.

[0088] For example, text data or a plurality of icons related to application programs, etc. can also be displayed on the display area 111 arranged along the front of the housing 101. Icons related to application programs, etc. can also be displayed on the display area 112.

[0089] In addition, text data, etc. can be scrolled (moved) and displayed across a plurality of display areas (for example, the display area 113 and the display area 112) arranged along the side of the housing 101. Or text data, etc. can also be scrolled (moved) and displayed across the display areas along the front, side, and back. In this way, by performing displays on two or more surfaces of the housing, it is possible to prevent, regardless of the orientation of the electronic device, the user from ignoring the displayed information, for example, when answering a phone call.

[0090] In addition, for example, when answering a call or receiving a text message, etc., the information of the sender (e.g., the name, phone number, email address, etc. of the sender) can be displayed not only on the display area 111 but also on the display areas arranged along the sides such as the display area 116 and the display area 112. For example, when receiving a text message, the information of the sender can be displayed in a flowing manner in the display area 112 and the display area 113.

[0091] Figure 7A And Figure 7B show examples of the usage states of the electronic device. In Figure 7A , a plurality of icons 121 are displayed on the display area 111, and a slider 125 is displayed on the display area 112. When the slider 125 is touched with a finger 126 or the like to move the slider up and down, as Figure 7B shown, the display contents of the icons 121 etc. displayed on the display area 111 move up and down correspondingly. Figure 7A And Figure 7B show the situation where when the slider 125 is scrolled down with a finger 126, images such as a plurality of icons 121 slide upward in the display area 111 to the display area 113.

[0092] Although the image displayed on the display area 111 is shown as an icon here, one mode of the present invention is not limited thereto, and various information such as files, static images or dynamic images can be displayed by sliding the slider 125 with a finger or the like according to the launched application program. The position of the slider 125 is not limited to the display area 112, and the slider 125 can also be arranged on the display area 111, the display area 113, the display area 114 or the display area 116 etc.

[0093] Also, during the standby time when the electronic device is not in use, the display state can be switched in a state where the display of the display area 111 arranged along the front surface of the housing 101 and / or the display area 116 arranged along the back surface is turned off (e.g., black display) and only information is displayed on the display areas arranged along the sides such as the display area 112. By not performing the display of the display area 111 or the display area 116 which has a larger area compared to other areas, the power consumption during standby can be reduced. Or, on the contrary, by only performing the display on the display area 111 and not performing the display on at least one of the display areas such as the display area 116 and the side display areas, the power consumption during use can also be reduced.

[0094] Alternatively, information may be displayed only on a part of the display area 111 provided on the front surface of the housing 101, the display area 116 provided on the back surface of the housing 101, the display area 112 provided on the side surface of the housing 101, etc. For example, display is performed only on the display area 111 and the display area 116, and display is turned off in the display area 112 provided along the side surface, etc.

[0095] In addition, preferably, at positions overlapping the display panel 110, specifically, regions overlapping the respective display areas include input devices such as touch sensors. As the touch sensor, for example, a sheet-like capacitive touch sensor may be provided to overlap the display panel 110. Alternatively, a so-called In-Cell type touch sensor that makes the display panel 110 itself have a touch sensor function may be used. In this case, it can be said that the display panel 110 has a function of a touch sensor in addition to the display function. As the In-Cell type touch panel, either a capacitive touch sensor or an optical touch sensor using a photoelectric conversion element may be used. Alternatively, a so-called On-Cell type touch sensor having a touch sensor function may be used on the counter substrate (a substrate on which no transistors, etc. are provided) of the display panel 110. Also in this case, it can be said that the display panel 110 has a function of a touch sensor in addition to the display function. Alternatively, a so-called touch panel integrally formed with a cover, which makes a cover or cover glass provided on the outermost surface of the housing 101 and protecting the display panel from damage, etc. have a touch sensor function, may be used. Alternatively, a touch sensor that makes an optical film included in the display panel 110 have a touch sensor function may be used.

[0096] For example, preferably, input devices such as touch sensors are provided over the entire area where the display panel 110 can display. Note that one aspect of the present invention is not limited to this. For example, regions where no input devices such as touch sensors are provided may be included in part or all of the display area 111, the display area 112, the display area 113, the display area 114, the display area 115, and the display area 116. For example, regions where no input devices such as touch sensors are provided may be included in part or all of the display area 116. Alternatively, regions where no input devices such as touch sensors are provided may be included in part or all of the display area 112 and part or all of the display area 114. Thus, by including regions where no touch sensors are provided, malfunction can be prevented. In addition, the electronic device can be made easier to hold.

[0097] For example, preferably, combinations of touch operations on the display area 111, the display area 112, the display area 113, the display area 114, the display area 115, or the display area 116 are associated with the operation of the application program.

[0098] Examples of establishing associations between combinations of touch operations on display areas 112, 113, or 115 and the operation of applications are shown below. For example, when touch operations are performed on all three display areas, the power is turned ON / OFF. When touch operations are performed on display area 112 and display area 114 simultaneously, the content of a text message is displayed while an application associated with the text message is launched. When touch operations are performed on display area 112 and display area 113 simultaneously, the application for making a phone call is launched. When touch operations are performed on display area 113 and display area 114 simultaneously, the browser is launched.

[0099] The association between the touch operations and the applications described above is an example. Preferably, the developer or user of the operating system or application software can appropriately set the association.

[0100] When each application operates by touching any one or more of the other display areas while in a state of touching display area 111, unintentional operations can be suppressed.

[0101] In this way, by combining the combinations of touch operations on multiple areas with the operation of applications, intuitive operations can be performed, and thus a user-friendly human interface can be obtained.

[0102] In the electronic device according to one aspect of the present invention, in addition to the front of the housing, display can be performed along one or more sides, and display can also be performed on the back of the housing. Therefore, various display expressions can be performed compared to existing electronic devices. In addition, touch sensors are provided in each display area, so various operations can be performed compared to existing electronic devices, and thus an electronic device that can perform more intuitive operations can be obtained.

[0103] Note that although examples of using the display panel 110 for various displays are shown here, one aspect of the present invention is not limited thereto. For example, depending on the situation or condition, data may not be displayed in one aspect of the present invention. As an example, in one aspect of the present invention, the electronic device can be used as a lighting device instead of the display panel 110. In one aspect of the present invention, by using the above device as a lighting device, the lighting device can be utilized as a beautifully designed indoor lighting. Or, in one aspect of the present invention, it can be used for lighting that can irradiate in various directions. Or, in one aspect of the present invention, it can be used as a light source such as a backlight or a front light instead of the display panel 110. In other words, in one aspect of the present invention, it can be used as a lighting device for the display panel.

[0104] Although an example of a case where one or both sides of the housing 101 are used as a display area is shown here, one aspect of the present invention is not limited to this. Figure 8A1 and Figure 8A2 show an example. Here, Figure 8A1 shows an example of a perspective schematic view of the front side of the electronic device, Figure 8A2 and shows an example of a perspective schematic view of the back side thereof. Similarly, Figure 8B1 and Figure 8B2 show an example of a perspective schematic view representing the front side and the back side of the electronic device. Figure 9A1 and Figure 9A2 show an example of a perspective schematic view representing the front side and the back side of the electronic device. Figure 9B1 and Figure 9B2 show an example of a perspective schematic view representing the front side and the back side of the electronic device.

[0105] The area 201 can also be set in these cases. As an example of this case, Figure 10A1 and Figure 10A2 show an example of a perspective schematic view representing the front side and the back side of the electronic device. Figure 10B1 and Figure 10B2 show an example of a perspective schematic view representing the front side and the back side of the electronic device. Figure 11A1 and Figure 11A2 show an example of a perspective schematic view representing the front side and the back side of the electronic device. Figure 11B1 and Figure 11B2 show an example of a perspective schematic view representing the front side and the back side of the electronic device.

[0106] Although this embodiment shows an example of a case where one display panel 110 includes a plurality of display areas, one aspect of the present invention is not limited to this. Each display area can be formed using a plurality of display panels. For example, the display area 111 and the display area 116 can be formed using different display panels. Figure 12A1 and Figure 12A2 show an example of this case. Here, Figure 12A1 is a perspective schematic view showing the front side of the electronic device, Figure 12A2 and is a perspective schematic view showing the back side.

[0107] This embodiment shows an example of the basic principle. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0108] Embodiment 2

[0109] In the present embodiment, an example is shown in which an image sensor is disposed in region 201. Here, an example is shown in which an image sensor is disposed in region 201 of Figure 1B1 and Figure 1B2 . Note that one aspect of the present invention is not limited thereto. In various other drawings, for example, in Figure 2B1 and Figure 2B2 etc., various elements and the like can also be disposed in region 201.

[0110] First, Figure 13A1 is a perspective schematic diagram showing the front side of the electronic device, Figure 13A2 is a perspective schematic diagram showing the back side. An image sensor 202 is provided in region 201. The image sensor 202 has a function of being able to capture a still image. Therefore, the image sensor 202 has the function of a camera. Thus, the image sensor 202 sometimes includes optical components such as a lens.

[0111] As Figure 13B shows, by turning the image sensor 202 toward the subject 205, a still image or a moving image or the like can be captured. At this time, an image 206 of the subject 205 is displayed on the display area 111, for example. The state of the subject 205 can be displayed in real time on the display area 111. When confirming the image 206, a still image or a moving image of the subject 205 is captured. At this time, when the illuminance of the subject 205 is low, for example, an illumination image 204 is displayed on the display area 116. Light is irradiated from the area where the illumination image 204 is displayed toward the subject 205. As a result, the illuminance of the subject 205 can be increased. Thereby, an appropriate and clear image can be captured.

[0112] For example, the illumination image 204 is preferably a white image. Note that one aspect of the present invention is not limited thereto. By changing the display color of the illumination image 204, the color of the light irradiated onto the subject 205 can be changed. As a result, images of the subject 205 in various states can be captured. For example, when the ambient light around is slightly red, blue, or green or the like, by adjusting the illumination image 204 to a suitable color, an appropriate image can be captured.

[0113] By changing the display color of the illumination image 204, images of the subject 205 can also be captured multiple times. For example, images are captured when the display color of the illumination image 204 is white, incandescent color, or daylight white, respectively. And by processing these images, an appropriate captured image can be obtained.

[0114] For example, the illumination image 204 preferably has the same color or grayscale over its entire surface. Note that one aspect of the present invention is not limited to this. Multiple regions may be provided, and images of different colors may be used for each of these regions.

[0115] Next, as another example, Figure 14A1 and Figure 14A2 An example showing a case where an image sensor 202 and an illumination element 203 are arranged in a region 201 is shown.

[0116] Here, Figure 14A1 is a perspective schematic view showing the front side of the electronic device, Figure 14A2 and is a perspective schematic view showing the back side. As Figure 14B shown, by turning the image sensor 202 and the illumination element 203 toward the subject 205, a still image, a moving image, or the like can be captured. At this time, for example, an image 206 of the captured subject 205 is displayed on the display area 111. The state of the subject 205 can be displayed in real time on the display area 111. When confirming the image 206, a still image or a moving image of the subject 205 is captured. At this time, for example, an image 207 of the captured subject 205 is also displayed on the display area 116. As a result, the subject 205 can confirm what it looks like in the image 207 while looking at the image 207. Thereby, an image can be captured at an appropriate angle.

[0117] The image 206 and the image 207 are displayed in different display areas. Therefore, the sizes, resolutions, etc. of the respective displayed images may sometimes be different from each other. Accordingly, it can also be said that the image 206 and the image 207 are different images. Note that the image 206 and the image 207 may also have the same size and the same resolution.

[0118] When the illuminance of the subject 205 is low, light is irradiated from the illumination element 203 to the subject 205. As a result, the illuminance of the subject 205 can be increased. Thereby, an appropriate and clear image can be captured.

[0119] For example, the illumination element 203 preferably emits white light. Note that one aspect of the present invention is not limited to this. By changing the emission color of the illumination element 203, the color of the light irradiated onto the subject 205 can be changed. As a result, the subject 205 in various states can be captured. For example, when the ambient light around is slightly reddish, bluish, or greenish, etc., the emission color of the illumination element 203 is adjusted to a suitable color, and thus an appropriate image can be captured.

[0120] By changing the emission color of the illumination element 203, it is also possible to take images of the subject 205 multiple times. For example, images are taken respectively when the emission color of the illumination element 203 is white, incandescent color, or daylight white. And by processing these images, an appropriate captured image can be obtained.

[0121] For example, the illumination element 203 preferably has the same color or gray level. Note that one aspect of the present invention is not limited to this. Here, a plurality of illumination elements 203 that emit light of different colors may also be provided.

[0122] Although the image 207 is displayed in Figure 14A2 , as shown in Figure 15A , it is also possible to display the illumination image 204, and depending on the situation, as shown in Figure 15B , it is also possible to display the illumination image 204 without displaying the image 207. By using the light from the illumination image 204 and the light from the illumination element 203, the brightness can be increased or the color of the illumination light can be changed. That is, the illumination element 203 and the illumination image 204 can also be used as a plurality of illumination elements.

[0123] Although an example of the case of using the display area 111 and the display area 116 is shown here, one aspect of the present invention is not limited to this. One aspect of the present invention can also use other display areas.

[0124] For example, the icon 208 may be displayed on the display area 113. Figure 16A1 And Figure 16A2 show examples of this case. Here, Figure 16A1 is a perspective schematic view showing the front side of the electronic device, Figure 16A2 is a perspective schematic view showing the back side. Figure 16B1 And Figure 16B2 show the same example. Here, Figure 16B1 is a perspective schematic view showing the front side of the electronic device, Figure 16B2 is a perspective schematic view showing the back side.

[0125] For example, the icon 208 has the function of a shutter button. By touching the icon 208, an image can be taken. Or, by touching the icon 208, the focal length can be adjusted.

[0126] Although the icon 208 has the function of a shutter button here, one aspect of the present invention is not limited to this. The shutter function can also be obtained by providing dedicated hardware such as a shutter button.

[0127] For example, the icon 209 may be displayed on the display area 112. Figure 17A1 And Figure 17A2 show examples of this case. Here,Figure 17A1 is a perspective schematic diagram showing the front side of the electronic device, Figure 17A2 is a perspective schematic diagram showing the back side.

[0128] Here, for example, the icon 209 has the function of a slider. By moving the slider, it is possible to magnify or reduce the image during shooting. That is, the zoom function can be controlled. At this time, the magnification or reduction of the image is controlled by optically controlling the lens of the image sensor 202 or by software controlling the digital image. Therefore, before shooting an image, by moving the slider of the icon 209, it is possible to control at what magnification to shoot.

[0129] Although the icon 209 is used here to obtain the zoom function, one embodiment of the present invention is not limited to this. It is also possible to obtain the zoom function by providing dedicated hardware such as operation buttons.

[0130] Note that the icon 208 and the icon 209 can also be displayed in the same display area (for example, the display area 112). In addition, various icons, texts, images, etc. can also be displayed in each display area.

[0131] In the case where the area 201 is provided, the image sensor 202 or the lighting element 203 can be arranged in a larger area. Therefore, for example, a larger lens or the like can be provided in the image sensor 202. Or, a larger image sensor 202 can also be arranged. Thus, it is possible to shoot clear and high-resolution images.

[0132] Although an example of the case where the image sensor 202 and the lighting element 203 are arranged in the area 201 is shown here, one embodiment of the present invention is not limited to this. For example, the image sensor 202 or the lighting element 203 can also be arranged in an area outside the area 201. Figure 18A1 and Figure 18A2 An example showing this situation is shown. Here, Figure 18A1 is a perspective schematic diagram showing the front side of the electronic device, Figure 18A2 is a perspective schematic diagram showing the back side. Similarly, Figure 18B1 and Figure 18B2 show other examples. Here, Figure 18B1 is a perspective schematic diagram showing the front side of the electronic device, Figure 18B2 is a perspective schematic diagram showing the back side.

[0133] In addition, a plurality of image sensors 202 can also be arranged. At least one image sensor 202 can be arranged in the area 201. Or, all the image sensors 202 can be arranged in an area outside the area 201.

[0134] Note that, although an example of the case where the area 201 is provided is shown, one aspect of the present invention is not limited thereto. Depending on the situation or circumstances, it is not necessarily required to provide the area 201. In this case, for example, the area of the display area 111 is substantially the same as the area of the display area 116. Figure 19A1 and Figure 19A2 Examples showing such cases are presented. Here, Figure 19A1 is a perspective schematic view showing the front side of the electronic device, Figure 19A2 is a perspective schematic view showing the back side. Similarly, Figure 19B1 and Figure 19B2 Examples showing other cases are presented. Here, Figure 19B1 is a perspective schematic view showing the front side of the electronic device, Figure 19B2 is a perspective schematic view showing the back side.

[0135] This imaging operation can be performed both when running software that implements the camera function and as part of software that implements other functions. For example, this imaging operation can also be performed when running software that implements the function of a videophone.

[0136] These functions can be implemented by software or hardware. In the case of implementation by software, it can be downloaded to the electronic device from a computer or through a wired or wireless telecommunication line. Alternatively, the software may have been initially stored in the storage device included in the electronic device.

[0137] This embodiment is obtained by making changes, additions, corrections, deletions, applications, generalization, or specialization to a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0138] Embodiment 3

[0139] This embodiment shows an example of the case where various components are arranged in the area 201. Although examples of the case where various components are arranged in the area 201 of Figure 1B1 and Figure 1B2 are shown here, one aspect of the present invention is not limited thereto. In various different drawings such as Figure 2B1 and Figure 2B2 etc., various components such as elements can also be arranged in the area 201. It is also possible to arrange the components as shown in Embodiment 2 in the area 201 or the like.

[0140] First, as an example, Figure 20 an example of the case where the battery 401 is provided in the area 201 is shown. Figure 20 is a perspective schematic view showing the back side of the electronic device.Figure 20 Shows the case where the cover is removed from the housing 101 and the battery 401 is taken out. When the battery 401 is assembled in the housing 101, the cover is put on the battery 401 to prevent the battery 401 from falling off. Thus, by arranging the battery 401 in the area 201, the operation of replacing the battery 401 can be made easier.

[0141] Although the battery 401 can be removed in Figure 20 , one mode of the present invention is not limited thereto. Depending on the situation or condition, the battery 401 may not be provided with a cover and may not be removable. In this case, although the battery 401 is provided in the area 201, the area is not shown, so the battery 401 can be made thick. Thereby, the capacity of the battery 401 can be increased.

[0142] Next, as another example, Figure 21 Shows an example of the case where a receiving unit 402 is provided in the area 201. Examples of the receiving unit 402 include an antenna, a coil, an electrode, etc. Figure 21 Is a perspective schematic diagram showing the back side of the electronic device. Figure 21 Shows the case where a receiving unit 402 is provided inside the housing 101 and communicates with a communication device 403 wirelessly. For example, the receiving unit 402 can be used as an antenna for near field communication (NFC: Near Field Communication). By using NFC, functions such as electronic money or credit cards can be realized. In this case, the area 201 is arranged so as not to overlap with the display area 116. For example, a touch sensor is not provided in the area 201 either. Therefore, there will be no interference from the touch sensor or display panel, etc. to radio waves, magnetic forces, electromagnetic waves, etc., and thus the receiving unit 402 can be effectively utilized.

[0143] The receiving unit 402 may also have a transmitting function instead of a receiving function. Or, the receiving unit 402 may have both a receiving function and a transmitting function. For example, the receiving unit 402 is not limited as long as it can receive or transmit information, energy, etc.

[0144] In addition to being used for NFC, the receiving unit 402 can also be used for various purposes such as television, telephone, Bluetooth, short-range communication, etc. In addition, the receiving unit 402 can also be used as a unit for charging the electronic device. For example, by using a coil or an antenna, etc., the electronic device can be charged wirelessly.

[0145] Next, as another example, Figure 22 Shows an example of the case where speakers 404 and 405 are provided in the area 201. Figure 22 Is a perspective schematic diagram showing the back side of the electronic device. Figure 22The case where speakers 404 and 405 are provided in the housing 101 is shown. As an example, the speaker 404 can emit sound for the left ear, and the speaker 405 can emit sound for the right ear. The speakers 404 and 405 can be separately arranged in the area 201. Therefore, stereophonic sound can be emitted.

[0146] This embodiment is obtained by changing, adding, modifying, deleting, applying, generalizing to a higher concept, or specializing to a lower concept of a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0147] Embodiment 4

[0148] In this embodiment, an example of a case where a display panel (display device) or an electronic device can be bent or folded to be deformed into various shapes for use is shown. First, refer to Figures 23A to 23C for description.

[0149] Figure 23A An electronic device 150 showing a mode (first mode) in which the display panel 110 is unfolded. Figure 23C An electronic device 150 showing a mode (second mode) in which the display panel 110 is folded. Figure 23B An electronic device 150 showing a mode in which the display panel 110 is bent. In other words, Figure 23B An electronic device 150 showing an intermediate mode in which the display panel 110 changes from one mode (first mode) of being unfolded and one mode (second mode) of being folded. In Figure 23B and Figure 23C , the display panel 110 is folded in such a way that its outside can be seen. Note that one aspect of the present invention is not limited to this. The display panel 110 can also be folded in such a way that it is hidden inside.

[0150] Figures 23A to 23C The electronic device 150 shown includes a flexible display panel 110. The electronic device 150 further includes a plurality of support panels 153a, a plurality of support panels 155a, and a plurality of support panels 155b.

[0151] The support panel 153a is formed, for example, of a material with lower flexibility than the display panel 110 (i.e., a material that is not easily bent). In addition, the support panels 155a and 155b are formed, for example, of a material with lower flexibility than the support panel 153a (i.e., a material that is not easily bent). As Figures 23A to 23CAs shown, it is preferable to dispose the support panel on the outer periphery of the display panel 110 and on the surface facing the display portion of the display panel 110, because the mechanical strength of the display panel 110 is improved, making it less likely to be damaged.

[0152] In addition, when the support panel 153a, the support panel 155a, and the support panel 155b are formed of a light-shielding material, external light can be suppressed from irradiating the drive circuit portion of the display panel 110. Thereby, light degradation of transistors and the like for the drive circuit portion can be suppressed.

[0153] Although not shown in Figures 23A to 23C the arithmetic unit, the storage unit, the detection unit, etc. of the electronic device 150 can be disposed between the display panel 110 and the support panel 155b.

[0154] The support panel 153a, the support panel 155a, and the support panel 155b can be formed using materials such as plastic, metal, alloy, rubber, etc. It is preferable to use plastic or rubber, etc., because a lightweight and less-damagable support panel can be formed. For example, as the support panel 153a, the support panel 155a, and the support panel 155b, silicone rubber, stainless steel, or aluminum can be used.

[0155] In addition, in the electronic device 150, the display panel 110 including a flexible display portion can be folded inward or outward. When the electronic device 150 is not in use, by bending in such a way that the display panel 110 is on the inside, damage or soiling of the display panel 110 can be suppressed.

[0156] Here, for example, as Figure 23A shown, a region 201 is provided near the display panel 110. Therefore, for example, similar to other embodiments, the area of the display region 111 is larger than the display region 116. Various components can be disposed in the region 201 in the same manner as in other embodiments.

[0157] Here, Figure 24A and Figure 24B show a case where the display panel is folded as Figure 23C shown. Figure 24A Shows an example of the front, Figure 24B shows an example of the back. For example, an image sensor 202 and an illumination element 203 are disposed in the region 201. An image 206 is displayed, for example, in the display region 111. An image 207 is displayed, for example, in the display region 116. Figure 24C Shows a case where icons 208 and 209 are displayed, for example, on the display region 112. As Figures 24C to 24E shown, by moving the slider, a zoom function such as magnification or reduction can be controlled.

[0158] AlthoughFigures 23A to 23C Illustrates a case where the area 201 is provided, but one aspect of the present invention is not limited thereto. For example, Figures 25A to 25C Illustrates a case where the area 201 is not provided. Similarly, Figure 26A and Figure 26B Illustrates a case where the display panel is folded. Figure 26B The state shown may also be Figure 26C or Figure 26D the state shown, etc.

[0159] Although Figures 23A to 23C Illustrates a case where there is one folding location, but one aspect of the present invention is not limited thereto. One aspect of the present invention may have multiple folding locations. For example, Figure 27A Illustrates an example of a case where there are three folding locations. For example, Figure 27B Illustrates an example of a case where there are four folding locations. In these cases, the area 201 may also not be provided. Figure 27C Illustrates an example of such a case.

[0160] This embodiment is obtained by changing, adding, modifying, deleting, applying, generalizing or specializing a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0161] Embodiment 5

[0162] In this embodiment, with reference to Figures 28A to 28C the structure of the touch panel of the electronic device applicable to one aspect of the present invention will be described.

[0163] Figure 28A is a front view for explaining the structure of the touch panel of the electronic device applicable to one aspect of the present invention.

[0164] Figure 28B is along Figure 28A the sectional views of the cutting lines A - B and the cutting line C - D.

[0165] Figure 28C is along Figure 28A the sectional view of the cutting line E - F.

[0166] <Front view>

[0167] In the touch panel 300 illustrated in this embodiment, there is a display unit 301 (refer to Figure 28A ).

[0168] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. The imaging pixels 308 can detect a finger or the like that touches the display unit 301. Thus, the imaging pixels 308 can be used to form a touch sensor.

[0169] Each pixel 302 includes a plurality of sub-pixels (e.g., sub-pixel 302R). In addition, a light-emitting element and a pixel circuit capable of supplying power for driving the light-emitting element are provided in the sub-pixel.

[0170] The pixel circuit is electrically connected to a wiring capable of supplying a selection signal and a wiring capable of supplying an image signal.

[0171] In addition, the touch panel 300 includes a scan line driving circuit 303g(1) capable of supplying a selection signal to the pixels 302 and an image signal line driving circuit 303s(1) capable of supplying an image signal to the pixels 302.

[0172] The imaging pixels 308 include a photoelectric conversion element and an imaging pixel circuit for driving the photoelectric conversion element.

[0173] The imaging pixel circuit is electrically connected to a wiring capable of supplying a control signal and a wiring capable of supplying a power supply potential.

[0174] Examples of the control signal include a signal capable of selecting the imaging pixel circuit for reading the recorded imaging signal, a signal capable of initializing the imaging pixel circuit, and a signal capable of determining the light detection time of the imaging pixel circuit.

[0175] The touch panel 300 is provided with an imaging pixel driving circuit 303g(2) capable of supplying a control signal to the imaging pixels 308 and an imaging signal line driving circuit 303s(2) for reading the imaging signal.

[0176] <Cross-sectional view>

[0177] The touch panel 300 has a substrate 310 and a counter substrate 370 opposed to the substrate 310 (see Figure 28B ).

[0178] The substrate 310 is a laminate in which a flexible substrate 310b, a barrier film 310a for preventing unintentional impurities from diffusing into the light-emitting element, and an adhesive layer 310c for bonding the substrate 310b and the barrier film 310a are laminated.

[0179] The counter substrate 370 is a laminate in which a flexible substrate 370b, a barrier film 370a for preventing unintentional impurities from diffusing into the light-emitting element, and an adhesive layer 370c for bonding the substrate 370b and the barrier film 370a are laminated (see Figure 28B ).

[0180] The sealant 360 adheres to the counter substrate 370 and the substrate 310. The sealant 360 has a refractive index higher than that of the atmosphere and also serves as an optical adhesive layer. The pixel circuit and the light-emitting element (such as the light-emitting element 350R) are provided between the substrate 310 and the counter substrate 370.

[0181] "Structure of Pixel"

[0182] Each pixel 302 has sub-pixels 302R, 302G, and 302B (refer to Figure 28C ). The sub-pixel 302R includes a light-emitting module 380R, the sub-pixel 302G includes a light-emitting module 380G, and the sub-pixel 302B includes a light-emitting module 380B.

[0183] For example, the sub-pixel 302R includes a light-emitting element 350R and a pixel circuit that can supply power to the light-emitting element 350R and includes a transistor 302t (refer to Figure 28B ). In addition, the light-emitting module 380R includes a light-emitting element 350R and an optical element (such as a coloring layer 367R).

[0184] The light-emitting element 350R includes a lower electrode 351R, an upper electrode 352, and a layer 353 containing a light-emitting organic compound between the lower electrode 351R and the upper electrode 352 (refer to Figure 28C ).

[0185] The layer 353 containing a light-emitting organic compound includes a light-emitting unit 353a, a light-emitting unit 353b, and an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.

[0186] The light-emitting module 380R includes a coloring layer 367R on the counter substrate 370. The coloring layer only needs to allow light with a specific wavelength to pass through. For example, a coloring layer that selectively allows light such as red, green, or blue to pass through can be used. Note that an area that allows the light emitted from the light-emitting element to pass through can also be provided.

[0187] For example, the light-emitting module 380R has a sealant 360 that contacts the light-emitting element 350R and the coloring layer 367R.

[0188] The coloring layer 367R is located at a position overlapping the light-emitting element 350R. As a result, a part of the light emitted from the light-emitting element 350R passes through the sealant 360 that also serves as an optical adhesive layer and the coloring layer 367R, and is emitted to the outside of the light-emitting module 380R in the direction indicated by the arrows in Figure 28B and Figure 28C .

[0189] Note that although the case of using a light-emitting element as a display element is shown here, one aspect of the present invention is not limited to this.

[0190] For example, in this specification and the like, a display element, a display device as a device having the display element, a light-emitting element, and a light-emitting device as a device having the light-emitting element can adopt various modes or have various elements. Examples of the display element, the display device, the light-emitting element, or the light-emitting device include display media in which contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic action, such as EL (electroluminescence) elements (including EL elements of organic and inorganic substances, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors (transistors that emit light according to current), electron-emitting elements, liquid crystal elements, electronic ink, electrophoretic elements, grating light valves (GLVs), plasma display panels (PDPs), elements using microelectromechanical systems (MEMS), digital micromirror devices (DMDs), digital microshutters (DMSs), MIRASOL (a trademark registered in Japan), interference modulation display (IMOD) elements, shutter-mode MEMS display elements, light interference-mode MEMS display elements, electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, etc. Examples of the display device using an EL element include an EL display. Examples of the display device using an electron-emitting element include a field emission display (FED) or a SED-mode flat panel display (SED: Surface-conduction Electron-emitter Display). Examples of the display device using a liquid crystal element include a liquid crystal display (e.g., a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, a projection liquid crystal display). Display devices using electronic ink or electrophoretic elements include electronic paper and the like. In the case of implementing a transflective liquid crystal display or a reflective liquid crystal display, it is sufficient to make a part or all of the pixel electrodes have the function of a reflective electrode. For example, a part or all of the pixel electrodes may have aluminum, silver, etc. At this time, a storage circuit such as an SRAM may also be provided under the reflective electrode. Thus, the power consumption is further reduced.

[0191] Structure of Touch Panel

[0192] The touch panel 300 includes a light-shielding layer 367BM on the opposed substrate 370. The light-shielding layer 367BM is provided so as to surround a colored layer (e.g., the colored layer 367R).

[0193] The touch panel 300 includes an antireflection layer 367p located at a position overlapping with the display unit 301. As the antireflection layer 367p, for example, a circularly polarized plate can be used.

[0194] The touch panel 300 includes an insulating film 321. The insulating film 321 covers the transistor 302t. Note that the insulating film 321 can be used as a layer for flattening the unevenness caused by the pixel circuit. An insulating film laminated with a layer capable of suppressing the diffusion of impurities into the transistor 302t or the like can be used for the insulating film 321.

[0195] The touch panel 300 includes a light-emitting element (e.g., the light-emitting element 350R) on the insulating film 321.

[0196] The touch panel 300 has a partition wall 328 (see Figure 28C ) overlapping with the end portion of the lower electrode 351R on the insulating film 321. In addition, a spacer 329 for controlling the interval between the substrate 310 and the counter substrate 370 is provided on the partition wall 328.

[0197] 《Structure of Image Signal Line Driving Circuit》

[0198] The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. Note that the driving circuit can be formed on the same substrate through the same process as the pixel circuit. As Figure 28B shown, the transistor 303t can also include a second gate on the insulating film 321. The second gate can be electrically connected to the gate of the transistor 303t, or different potentials can be applied to these gates. If necessary, a second gate can be provided in the transistor 308t, the transistor 302t, etc.

[0199] 《Structure of Imaging Pixel》

[0200] The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit for detecting the light irradiated to the photoelectric conversion element 308p. The imaging pixel circuit includes a transistor 308t.

[0201] For example, a pin-type photodiode can be used for the photoelectric conversion element 308p.

[0202] 《Other Structures》

[0203] The touch panel 300 includes a wiring 311 capable of supplying signals. Terminals 319 are provided on the wiring 311. Note that an FPC 309(1) capable of supplying signals such as an image signal or a synchronization signal is electrically connected to the terminal 319.

[0204] Note that a printed wiring board (PWB) can also be mounted on the FPC 309(1).

[0205] Transistors formed through the same process can be used for the transistor 302t, the transistor 303t, the transistor 308t, etc.

[0206] As the structure of the transistor, a bottom-gate type, a top-gate type, or the like of transistor can be adopted.

[0207] As the gate, source, drain of the transistor, and the wiring or electrodes included in the touch panel, a single layer or a stacked layer of a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy mainly composed of the above metals can be used. For example, a single-layer structure of an aluminum film containing silicon, a double-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a three-layer structure in which a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or a titanium nitride film are laminated in sequence, a three-layer structure in which a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film are laminated in sequence, etc. can be cited. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide can be used. Copper containing manganese is preferably used because the shape controllability during etching is improved.

[0208] For example, it is preferable to use silicon for the semiconductor forming the channels of transistors such as transistor 302t, transistor 303t, and transistor 308t. Although amorphous silicon can also be used as silicon, silicon having crystallinity is particularly preferably used. For example, microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. are preferably used. In particular, polycrystalline silicon can be formed at a lower temperature compared with single-crystalline silicon, and has a higher field-effect mobility and higher reliability compared with amorphous silicon. By using such a polycrystalline semiconductor for the pixel, the aperture ratio of the pixel can be increased. Even in the case of including pixels with extremely high resolution, a gate driving circuit and a source driving circuit can be formed on the same substrate as the pixel, thereby reducing the number of components included in the electronic device.

[0209] Here, semiconductor devices such as transistors for pixels or each driving circuit included in each display region in the display panel 110 preferably use an oxide semiconductor. In particular, an oxide semiconductor having a band gap larger than that of silicon is preferably included. A semiconductor material having a band gap larger than that of silicon and a carrier density smaller than that of silicon is preferably used because the current in the off-state of the transistor can be reduced.

[0210] For example, the above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). More preferably, the oxide semiconductor contains an oxide represented by In-M-Zn type oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0211] In particular, as the semiconductor layer, an oxide semiconductor film is preferably used: having a plurality of crystal parts, the c-axis of the crystal part is oriented in a direction perpendicular to the surface or the top surface of the semiconductor layer on which the semiconductor layer is formed, and there is no grain boundary between adjacent crystal parts.

[0212] In this oxide semiconductor, since there are no grain boundaries, stress caused when the display panel is bent is suppressed, and cracks are not generated in the oxide semiconductor film. Therefore, such an oxide semiconductor can be applied to a flexible display panel or the like used in a bent state.

[0213] By using the above material as the semiconductor layer, a transistor with suppressed electrical property variations and high reliability can be realized.

[0214] Since the off-state current of the transistor is low, the charge stored in the capacitor through the transistor can be maintained for a long time. When such a transistor is used for a pixel, the operation of the drive circuit can be stopped while maintaining the gray scale of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized.

[0215] Note that the preferred mode of the oxide semiconductor that can be used for the semiconductor layer and its forming method will be described in detail in the following embodiments.

[0216] Here, a method for forming a flexible light-emitting panel will be described.

[0217] Here, for convenience, a structure including pixels and a drive circuit or a structure including optical members such as color filters is referred to as an element layer. The element layer includes, for example, display elements, and in addition, may include wirings electrically connected to the display elements, elements such as transistors for pixels or circuits.

[0218] Here, a support body having an insulating surface on which the element layer is formed is referred to as a substrate.

[0219] As a method for forming an element layer on a flexible substrate having an insulating surface, a method of directly forming an element layer on the substrate; and a method of forming an element layer on a rigid support substrate different from the substrate and then peeling the element layer from the support substrate and transposing the element layer to the substrate can be cited.

[0220] When the material constituting the substrate has heat resistance to heating in the element layer forming process, when directly forming the element layer on the substrate, the process is simplified, so it is preferred. At this time, when forming the element layer in a state where the substrate is fixed to the support substrate, it is easy to transfer the element layer in and between devices, so it is preferred.

[0221] In the case of a method of forming an element layer on a support substrate and then transposing the element layer to a substrate, first, a release layer and an insulating layer are laminated on the support substrate, and the element layer is formed on the insulating layer. Then, the support substrate is peeled from the element layer to transpose the element layer to the substrate. At this time, it is sufficient to select a material that causes peeling at the interface between the support substrate and the release layer, at the interface between the release layer and the insulating layer, or in the release layer.

[0222] For example, preferably, a laminate in which a layer containing a high melting point metal material such as tungsten and a layer containing an oxide of the metal material are laminated is used as the release layer, and a layer in which a plurality of silicon nitrides or silicon oxynitrides are laminated is used on the release layer. It is preferable to use a high melting point metal material because the degree of freedom in the formation process of the element layer is increased.

[0223] Peeling can be performed by applying mechanical force, etching the release layer, or dripping a liquid onto a part of the peeling interface and infiltrating it into the entire peeling interface. Alternatively, peeling can also be performed by heating the peeling interface using the difference in thermal expansion coefficient.

[0224] When peeling can be performed at the interface between the support substrate and the insulating layer, the release layer may not be provided. For example, glass can be used as the support substrate, an organic resin such as polyimide can be used as the insulating layer, and a peeling starting point can be formed by locally heating a part of the organic resin using a laser or the like, thereby performing peeling at the interface between the glass and the insulating layer. Alternatively, a metal layer can be provided between the support substrate and the insulating layer formed of an organic resin, and the metal layer can be heated by passing an electric current through the metal layer, thereby performing peeling at the interface between the metal layer and the insulating layer. At this time, the insulating layer formed of an organic resin can be used as the substrate.

[0225] Examples of flexible substrates include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, and polyvinyl chloride resins. It is particularly preferable to use a material with a low coefficient of thermal expansion. For example, a polyamide-imide resin, a polyimide resin, PET, etc. with a coefficient of thermal expansion of 30×10 -6 / K or less can be used. In addition, a substrate in which a resin is impregnated in a fibrous body (also called a prepreg) or a substrate in which an inorganic filler is mixed into an organic resin to reduce the coefficient of thermal expansion can also be used.

[0226] In the case where the above-described material contains a fibrous body, high-strength fibers of an organic compound or an inorganic compound are used as the fibrous body. Specifically, the high-strength fibers are fibers having a high tensile elastic modulus or Young's modulus. Typical examples thereof include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aromatic polyamide fibers, poly(p-phenylene benzobisoxazole) fibers, glass fibers, and carbon fibers. As the glass fibers, glass fibers such as E glass, S glass, D glass, and Q glass can be cited. The above-described fibrous body is used in a state of a woven fabric or a non-woven fabric, and a structure in which a resin is impregnated in the fibrous body and the resin is cured can also be used as a flexible substrate. By using a structure including a fibrous body and a resin as a flexible substrate, the reliability against breakage caused by bending or local pressing can be improved, and thus it is preferable.

[0227] Note that, in a display device according to one embodiment of the present invention, an active matrix method having an active element in a pixel or a passive matrix method having no active element in a pixel can be employed.

[0228] In the active matrix method, various active elements (nonlinear elements) can be used as the active element (nonlinear element) in addition to a transistor. For example, a metal-insulator-metal (MIM: Metal Insulator Metal) or a thin film diode (TFD: Thin Film Diode) can also be used. Since the manufacturing processes of these elements are few, the manufacturing cost can be reduced or the yield can be increased. In addition, since the size of these elements is small, the aperture ratio can be increased, thereby achieving low power consumption or high brightness.

[0229] In addition to the active matrix method, a passive matrix method having no active element (nonlinear element) can also be employed. Since no active element (nonlinear element) is used, the manufacturing processes are few, and thus the manufacturing cost can be reduced or the yield can be increased. In addition, since no active element (nonlinear element) is used, the aperture ratio can be increased, thereby achieving low power consumption or high brightness, etc.

[0230] This embodiment changes, adds, corrects, deletes, applies, generalizes to a higher concept, or specializes to a lower concept for a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced with a part or all of other embodiments.

[0231] Embodiment 6

[0232] In this embodiment, with reference to Figures 29A to 29C the structure of a foldable touch panel of an electronic device applicable to one embodiment of the present invention will be described.

[0233] Figures 29A to 29CIt is a cross-sectional view of the touch panel 500.

[0234] The touch panel 500 includes a display unit 501 and a touch sensor 595. In addition, the touch panel 500 includes a substrate 510, a substrate 570, and a substrate 590. Note that the substrate 510, the substrate 570, and the substrate 590 are all flexible.

[0235] The display unit 501 includes: a substrate 510; a plurality of pixels on the substrate 510; and a plurality of wirings 511 capable of supplying signals to the pixels. The plurality of wirings 511 are led to the outer peripheral portion of the substrate 510, and a part of them constitutes a terminal 519. The terminal 519 is electrically connected to the FPC509(1).

[0236] <Touch sensor>

[0237] The substrate 590 includes a touch sensor 595 and a plurality of wirings 598 electrically connected to the touch sensor 595. The plurality of wirings 598 are led to the outer peripheral portion of the substrate 590, and a part of them constitutes a terminal. This terminal is electrically connected to the FPC509(2).

[0238] As the touch sensor 595, a capacitive touch sensor can be used. Examples of the capacitive touch sensor are a surface capacitive touch sensor and a projected capacitive touch sensor.

[0239] Examples of the projected capacitive touch sensor are mainly a self-capacitive touch sensor and a mutual-capacitive touch sensor according to different driving methods. It is preferable to use a mutual-capacitive touch sensor because multiple points can be detected simultaneously.

[0240] Next, an example of using a projected capacitive touch sensor will be described.

[0241] Note that various sensors capable of detecting the approach or contact of a detection object such as a finger can be used.

[0242] The projected capacitive touch sensor 595 includes electrodes 591 and 592. The electrode 591 is electrically connected to any one of the plurality of wirings 598, and the electrode 592 is electrically connected to any other one of the plurality of wirings 598.

[0243] The wiring 594 electrically connects two electrodes 591 sandwiching the electrode 592. The area of the intersection of the electrode 592 and the wiring 594 is preferably as small as possible. This structure can reduce the area of the region where no electrode is provided, thereby reducing the non-uniformity of the transmittance. As a result, the brightness non-uniformity of the light from the touch sensor 595 can be reduced.

[0244] Note that the electrodes 591 and 592 may have various shapes. For example, the following structure may be adopted: a plurality of electrodes 591 are arranged with as little gap therebetween as possible, and a plurality of electrodes 592 are arranged spaced apart via an insulating layer to form a region that does not overlap the electrodes 591. In this case, by providing a virtual electrode electrically insulated from these electrodes between two adjacent electrodes 592, the area of the region with different transmittance can be reduced, which is preferred.

[0245] The touch sensor 595 includes a substrate 590 , electrodes 591 and electrodes 592 arranged in a staggered pattern on the substrate 590 , an insulating layer 593 covering the electrodes 591 and the electrodes 592 , and wirings 594 that electrically connect adjacent electrodes 591 .

[0246] The adhesive layer 597 bonds the substrate 590 and the substrate 570 together in such a manner that the touch sensor 595 overlaps the display portion 501 .

[0247] The electrodes 591 and 592 are formed using a light-transmitting conductive material. As the light-transmitting conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide to which gallium is added, or graphene can be used.

[0248] After a light-transmitting conductive material is deposited on the substrate 590 by sputtering, unnecessary portions may be removed by various patterning techniques such as photolithography to form electrodes 591 and 592. Graphene may be formed by applying a solution in which graphene oxide is dispersed and then reducing the solution.

[0249] Examples of a material used for the insulating layer 593 include a resin such as an acrylic resin or an epoxy resin, a resin having a siloxane bond, and an inorganic insulating material such as silicon oxide, silicon oxynitride, or aluminum oxide.

[0250] In addition, an opening reaching the electrode 591 is formed in the insulating layer 593, and the wiring 594 electrically connects the adjacent electrodes 591. Since the light-transmitting conductive material can increase the aperture ratio of the touch panel, it can be applied to the wiring 594. In addition, since the material having higher conductivity than the electrode 591 and the electrode 592 can reduce the resistance, it can be applied to the wiring 594.

[0251] One electrode 592 extends in one direction, and a plurality of electrodes 592 are arranged in a stripe shape.

[0252] The wiring 594 intersects the electrode 592 .

[0253] Adjacent electrodes 591 are provided with one electrode 592 interposed therebetween. Wiring 594 electrically connects the adjacent electrodes 591 together.

[0254] Note that the multiple electrodes 591 do not necessarily have to be arranged in a direction orthogonal to one electrode 592, and may also be arranged to cross one electrode 592 at an angle less than 90°.

[0255] A wiring 598 is electrically connected to the electrode 591 or the electrode 592. A part of the wiring 598 is used as a terminal. As the wiring 598, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material containing any of the metal materials can be used.

[0256] Note that the touch sensor 595 can be protected by providing an insulating layer covering the insulating layer 593 and the wiring 594.

[0257] In addition, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0258] As the connection layer 599, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0259] The adhesive layer 597 has translucency. For example, a thermosetting resin or an ultraviolet curable resin can be used. Specifically, resins such as an acrylic resin, a polyurethane resin, an epoxy resin, or a resin having a siloxane bond can be used.

[0260] <Display unit>

[0261] The display unit 501 includes a plurality of pixels arranged in a matrix. Each pixel includes a display element and a pixel circuit for driving the display element.

[0262] In the present embodiment, an example in which an organic electroluminescent element that emits white light is applied to the display element is described, but the display element is not limited thereto. For example, organic electroluminescent elements having different colors such as an organic electroluminescent element that emits red light, an organic electroluminescent element that emits blue light, and an organic electroluminescent element that emits green light can also be used.

[0263] As the display element, in addition to the organic electroluminescent element, various display elements such as a display element (also referred to as electronic ink) that uses an electrophoresis method, an electrophoretic fluid method, etc. for display, a MEMS display element of a shutter method, and a MEMS display element of an optical interference method can also be used. A pixel circuit suitable for the structure of the display element employed can be selected and used from various pixel circuits.

[0264] The substrate 510 is a laminate in which a flexible substrate 510b, a barrier film 510a for preventing impurities from diffusing into the light-emitting element, and an adhesive layer 510c for bonding the barrier film 510a and the substrate 510b are laminated.

[0265] The substrate 570 is a laminate in which a flexible substrate 570b, a barrier film 570a for preventing impurities from diffusing into the light-emitting element, and an adhesive layer 570c for bonding the barrier film 570a and the substrate 570b are laminated.

[0266] The sealant 560 bonds the substrate 570 and the substrate 510. The sealant 560 has a refractive index higher than that of the atmosphere. When light is extracted on the side of the sealant 560, the sealant 560 also serves as an optical adhesive layer. The pixel circuit and the light-emitting element (e.g., the light-emitting element 550R) are provided between the substrate 510 and the substrate 570.

[0267] 《Structure of Pixel》

[0268] The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.

[0269] The sub-pixel 502R includes a light-emitting element 550R and a pixel circuit that can supply power to the light-emitting element 550R and includes a transistor 502t. In addition, the light-emitting module 580R includes a light-emitting element 550R and an optical element (e.g., a coloring layer 567R).

[0270] The light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.

[0271] The light-emitting module 580R has a coloring layer 567R on the light extraction side. As long as the coloring layer can transmit light with a specific wavelength, for example, a coloring layer that selectively transmits light such as red, green, or blue can be used. Note that an area through which light emitted from the light-emitting element directly passes may also be provided in other sub-pixels.

[0272] When the sealant 560 is provided on the light extraction side, the sealant 560 contacts the light-emitting element 550R and the coloring layer 567R.

[0273] The coloring layer 567R is located at a position overlapping the light-emitting element 550R. Thus, a part of the light emitted by the light-emitting element 550R passes through the coloring layer 567R and is emitted to the outside of the light-emitting module 580R in the direction indicated by the arrow in Figure 29A .

[0274] 《Structure of Display Unit》

[0275] The display unit 501 has a light-shielding layer 567BM on the light extraction side. The light-shielding layer 567BM is provided so as to surround a colored layer (e.g., colored layer 567R).

[0276] The display unit 501 includes an antireflection layer 567p located at a position overlapping with the pixel. As the antireflection layer 567p, for example, a circular polarizer can be used.

[0277] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Note that the insulating film 521 can be used as a layer for flattening the unevenness caused by the pixel circuit. In addition, a stacked film including a layer capable of suppressing the diffusion of impurities can be used for the insulating film 521. Thereby, it is possible to suppress a decrease in the reliability of the transistor 502t and the like due to unintentional impurity diffusion.

[0278] The display unit 501 includes a light-emitting element (e.g., light-emitting element 550R) on the insulating film 521.

[0279] The display unit 501 has a partition wall 528 overlapping with an end portion of the lower electrode on the insulating film 521. In addition, a spacer for controlling the interval between the substrate 510 and the substrate 570 is provided on the partition wall 528.

[0280] 《Structure of the scan line driving circuit》

[0281] The scan line driving circuit 503g(1) includes a transistor 503t and a capacitor 503c. Note that the driving circuit can be formed on the same substrate by the same process as the pixel circuit.

[0282] 《Other structures》

[0283] The display unit 501 includes a wiring 511 capable of supplying signals. A terminal 519 is provided on the wiring 511. Note that an FPC509(1) capable of supplying signals such as an image signal or a synchronization signal is electrically connected to the terminal 519.

[0284] Note that a printed wiring board (PWB) can also be mounted on the FPC509(1).

[0285] <Modification example 1 of the display unit>

[0286] Various transistors can be applied to the display unit 501.

[0287] Figure 29A and 29B The structure showing the case where a bottom-gate transistor is used for the display unit 501 is shown.

[0288] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. can be used for Figure 29AThe transistors 502t and 503t shown.

[0289] For example, a semiconductor layer containing polysilicon or the like can be used for Figure 29B The transistors 502t and 503t shown.

[0290] Figure 29C A structure showing a case where a top-gate transistor is used for the display unit 501.

[0291] For example, a semiconductor layer containing polysilicon or a transposed single-crystalline silicon film or the like can be used for Figure 29C The transistors 502t and 503t shown.

[0292] This embodiment changes, adds, corrects, deletes, applies, generalizes upward or specializes downward a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0293] Embodiment 7

[0294] In this embodiment, with reference to Figures 30A to 30C The structure of a foldable touch panel of an electronic device that can be used for one mode of the present invention will be described.

[0295] Figures 30A to 30C It is a cross-sectional view illustrating the touch panel 500B.

[0296] The difference between the touch panel 500B described in this embodiment and the touch panel 500 described in Embodiment 6 is that the touch panel 500B includes a display unit 501 that displays the supplied image data on the side where the transistors are provided; and a touch sensor is provided on the side of the substrate 510 of the display unit. Here, the structure different from the touch panel 500 will be described in detail, and the above description will be incorporated by reference for other identical structures.

[0297] <Display unit>

[0298] The display unit 501 includes a plurality of pixels arranged in a matrix. Each pixel includes a display element and a pixel circuit for driving the display element.

[0299] 《Structure of pixel》

[0300] The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.

[0301] The sub-pixel 502R includes a light-emitting element 550R and a pixel circuit that can supply power to the light-emitting element 550R and includes a transistor 502t.

[0302] The light-emitting module 580R includes a light-emitting element 550R and an optical element (e.g., a colored layer 567R).

[0303] The light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.

[0304] The light-emitting module 580R has a colored layer 567R on the light extraction side. The colored layer only needs to allow light with a specific wavelength to pass through. For example, a colored layer that selectively allows light presenting red, green, or blue to pass through can be used. Note that an area allowing the light emitted by the light-emitting element to directly pass through can also be provided in other sub-pixels.

[0305] The colored layer 567R is located at a position overlapping with the light-emitting element 550R. Figure 30A The illustrated light-emitting element 550R emits light toward the side where the transistor 502t is provided. Thus, a part of the light emitted by the light-emitting element 550R passes through the colored layer 567R and is emitted to the outside of the light-emitting module 580R in the direction indicated by the arrow in Figure 30A .

[0306] 《Structure of the display unit》

[0307] The display unit 501 has a light-shielding layer 567BM on the light-emitting side. The light-shielding layer 567BM is provided so as to surround a colored layer (e.g., the colored layer 567R).

[0308] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Note that the insulating film 521 can be used as a layer for flattening the unevenness caused by the pixel circuit. A laminated film including a layer capable of suppressing the diffusion of impurities can be used for the insulating film 521. Thus, for example, a reduction in the reliability of the transistor 502t and the like due to unintentional impurities diffused from the colored layer 567R can be suppressed.

[0309] 〈Touch sensor〉

[0310] The touch sensor 595 is provided on the side of the substrate 510 of the display unit 501 (refer to Figure 30A ).

[0311] An adhesive layer 597 is provided between the substrate 510 and the substrate 590 to bond the display unit 501 and the touch sensor 595.

[0312] 〈First modification example of the display unit〉

[0313] Various transistors can be applied to the display unit 501.

[0314] Figure 30A and 30BThe structure showing the case where a bottom-gate transistor is used for the display section 501.

[0315] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. can be used for Figure 30A the transistors 502t and 503t shown.

[0316] For example, a semiconductor layer containing polysilicon, etc. can be used for Figure 30B the transistors 502t and 503t shown.

[0317] Figure 30C The structure showing the case where a top-gate transistor is used for the display section 501.

[0318] For example, a semiconductor layer containing polysilicon or a transposed single-crystalline silicon film, etc. can be used for Figure 30C the transistors 502t and 503t shown.

[0319] This embodiment makes changes, additions, corrections, deletions, applications, generalization or specialization to a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0320] Embodiment 8

[0321] In this embodiment, an oxide semiconductor is described, which is suitable for the semiconductor layer that can be used in the semiconductor device of the display panel of one aspect of the present invention.

[0322] The oxide semiconductor has a high energy gap of 3.0 eV or more. In a transistor including an oxide semiconductor film obtained by processing the oxide semiconductor under appropriate conditions and sufficiently reducing its carrier density, the leakage current (off-state current) between the source and the drain in the off state can be made much lower than that of existing silicon-containing transistors.

[0323] The applicable oxide semiconductor preferably contains at least indium (In) or zinc (Zn). Particularly preferably, it contains In and Zn. In addition, as a stabilizer for reducing the electrical property non-uniformity of the transistor using this oxide semiconductor, it further contains one or more selected from gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), scandium (Sc), yttrium (Y), lanthanide elements (for example, cerium (Ce), neodymium (Nd), gadolinium (Gd)).

[0324] For example, as the oxide semiconductor, indium oxide, tin oxide, zinc oxide, In-Zn-based oxides, Sn-Zn-based oxides, Al-Zn-based oxides, Zn-Mg-based oxides, Sn-Mg-based oxides, In-Mg-based oxides, In-Ga-based oxides, In-Ga-Zn-based oxides (also denoted as IGZO), In-Al-Zn-based oxides, In-Sn-Zn-based oxides, Sn-Ga-Zn-based oxides, Al-Ga-Zn-based oxides, Sn-Al-Zn-based oxides, In-Hf-Zn-based oxides, In-Zr-Zn-based oxides, In-Ti-Zn-based oxides, In-Sc-Zn-based oxides, In-Y-Zn-based oxides, In-La-Zn-based oxides, In-Ce-Zn-based oxides, In-Pr-Zn-based oxides, In-Nd-Zn-based oxides, In-Sm-Zn-based oxides, In-Eu-Zn-based oxides, In-Gd-Zn-based oxides, In-Tb-Zn-based oxides, In-Dy-Zn-based oxides, In-Ho-Zn-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn-based oxides, In-Lu-Zn-based oxides, In-Sn-Ga-Zn-based oxides, In-Hf-Ga-Zn-based oxides, In-Al-Ga-Zn-based oxides, In-Sn-Al-Zn-based oxides, In-Sn-Hf-Zn-based oxides, In-Hf-Al-Zn-based oxides can be used.

[0325] Herein, the "In-Ga-Zn-based oxide" refers to an oxide mainly composed of In, Ga, and Zn, and the ratio of In:Ga:Zn is not limited. The In-Ga-Zn-based oxide may also contain metal elements other than In, Ga, and Zn.

[0326] In addition, as the oxide semiconductor, a material represented by InMO3(ZnO) m (where m>0 and m is not an integer) can also be used. Note that M represents one or more metal elements selected from Ga, Fe, Mn, and Co or an element used as the above stabilizer. In addition, as the oxide semiconductor, a material represented by In2SnO5(ZnO) n (where n>0 and n is an integer) can also be used.

[0327] For example, In-Ga-Zn-based oxides with an atomic ratio of In:Ga:Zn = 1:1:1, 1:3:2, 1:3:4, 1:3:6, 3:1:2, or 2:1:3 or oxides close to the above composition can be used.

[0328] Note that if the oxide semiconductor film contains a large amount of hydrogen, the hydrogen bonds with the oxide semiconductor and a part of the hydrogen becomes a donor, thus generating electrons as carriers. As a result, the threshold voltage of the transistor drifts in the negative direction. Therefore, it is preferable to perform a dehydration treatment (dehydrogenation treatment) after forming the oxide semiconductor film to remove hydrogen or moisture from the oxide semiconductor film and highly purify it so that it contains as few impurities as possible.

[0329] Note that sometimes oxygen in the oxide semiconductor film also decreases due to the dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film. Therefore, in order to fill the oxygen deficiency increased due to the dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film, it is preferable to add oxygen to the oxide semiconductor film. In this specification and the like, sometimes the case of supplying oxygen to the oxide semiconductor film is referred to as an oxidation treatment, or sometimes the case where the oxygen content of the oxide semiconductor film exceeds the stoichiometric composition is referred to as a per-oxidation treatment.

[0330] As described above, by performing a dehydration treatment (dehydrogenation treatment) to remove hydrogen or moisture from the oxide semiconductor film and an oxidation treatment to fill the oxygen deficiency, an oxide semiconductor film that is i-type (intrinsic) or an oxide semiconductor film that is infinitely close to an i-type oxide semiconductor (substantially an i-type oxide semiconductor) can be obtained. Note that "substantially intrinsic" means that the oxide semiconductor film includes extremely few (nearly zero) carriers from donors, and its carrier density is 1×10 17 / cm 3 Hereinafter, 1×10 16 / cm 3 Hereinafter, 1×10 15 / cm 3 Hereinafter, 1×10 14 / cm 3 Hereinafter, 1×10 13 / cm 3 Hereinafter, it is particularly preferably 8×10 11 / cm 3 Hereinafter, it is more preferably 1×10 11 / cm 3 Hereinafter, it is further preferably 1×10 10 / cm 3 Hereinafter and 1×10 -9 / cm 3 or more.

[0331] Thus, a transistor having an i-type or substantially i-type oxide semiconductor film can achieve extremely excellent off-state current characteristics. For example, the drain current when the transistor using the oxide semiconductor film is in the off state can be set to 1×10 -18 A or less at room temperature (about 25 °C), preferably 1×10-21 1 A or less, more preferably 1×10 -24 1 A or less. Alternatively, the drain current can be set to 1×10 -15 1 A or less, preferably 1×10 -18 1 A or less, more preferably 1×10 -21 1 A or less. "The transistor is in the off state" means that in the case of an n-channel transistor, the gate voltage is sufficiently lower than the threshold voltage. Specifically, when the gate voltage is 1 V or more, 2 V or more, or 3 V or more lower than the threshold voltage, the transistor becomes in the off state. Note that these current values are the values when the voltage between the source and the drain is, for example, 1 V, 5 V, or 10 V.

[0332] Next, the structure of the oxide semiconductor film will be described.

[0333] The oxide semiconductor film is roughly classified into a single-crystalline oxide semiconductor film and a non-single-crystalline oxide semiconductor film. The non-single-crystalline oxide semiconductor film includes any film such as a CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) film, a polycrystalline oxide semiconductor film, a microcrystalline oxide semiconductor film, and an amorphous oxide semiconductor film.

[0334] First, the CAAC-OS film will be described. Note that CAAC-OS can be referred to as an oxide semiconductor containing c-axis aligned nanocrystals (CANC).

[0335] The CAAC-OS film is an oxide semiconductor film including a plurality of crystalline portions aligned in the c-axis direction.

[0336] In a transmission electron microscope (TEM) image of the CAAC-OS film, a clear boundary, that is, a grain boundary, between the crystalline portions cannot be observed. Therefore, in the CAAC-OS film, a decrease in electron mobility caused by the grain boundary is not likely to occur.

[0337] From the TEM image (cross-sectional TEM image) of the CAAC-OS film observed from a direction substantially parallel to the sample surface, it is understood that metal atoms are arranged in layers in the crystalline portion. Each metal atom layer has a shape reflecting the unevenness of the surface on which the CAAC-OS film is formed (also referred to as the formed surface) or the top surface of the CAAC-OS film and is arranged in a manner parallel to the formed surface or the top surface of the CAAC-OS film.

[0338] On the other hand, from the TEM image (planar TEM image) of the CAAC-OS film observed from a direction substantially perpendicular to the sample surface, it can be seen that metal atoms are arranged in a triangular or hexagonal shape in the crystal part. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

[0339] Figure 31A is a cross-sectional TEM image of the CAAC-OS film. Figure 31B is a further magnified Figure 31A cross-sectional TEM image. In Figure 31B for easy understanding, the atomic arrangement is emphasized and shown.

[0340] Figure 31C is Figure 31A a local Fourier transform image of the area (with a diameter of approximately 4 nm) surrounded by circles between A and O and between O and A' in Figure 31C . In each area of

[0341] Figure 31C , c-axis orientation can be confirmed. In addition, the c-axis direction between A and O is different from the c-axis direction between O and A', from which it can be seen that the crystal grains between A and O are different from the crystal grains between O and A'. In addition, it can be seen that between A and O, the angle of the c-axis gradually and continuously changes at 14.3°, 16.6°, 26.4°, etc. Similarly, it can be seen that between O and A', the angle of the c-axis gradually and continuously changes at -18.3°, -17.6°, -15.9°, etc. Figure 32A )

[0342] From the results of the cross-sectional TEM image and the planar TEM image, orientation can be confirmed in the crystal part of the CAAC-OS film.

[0343] Almost all of the crystal parts contained in the CAAC-OS film can be accommodated in a cube with a side length of less than 100 nm. Therefore, sometimes the crystal parts included in the CAAC-OS film can be accommodated in a cube with a side shorter than 10 nm, shorter than 5 nm, or shorter than 3 nm. Note that sometimes multiple crystal parts included in the CAAC-OS film are connected to form a large crystal region. For example, in the planar TEM image, crystal regions of 2500 nm 2 or more, 5 μm 2 or more, or 1000 μm 2 or more are sometimes observed.

[0344] The structure of the CAAC-OS film was analyzed using an X-ray diffraction (XRD) apparatus. For example, when analyzing a CAAC-OS film including InGaZnO4 crystals by the out-of-plane method, peaks often appear around a diffraction angle (2θ) of 31°. Since this peak originates from the (009) plane of the InGaZnO4 crystal, it can be seen that the crystals in the CAAC-OS film have c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the formed surface or the top surface of the CAAC-OS film.

[0345] On the other hand, when analyzing the CAAC-OS film by the in-plane method in which X-rays are incident on the sample from a direction substantially perpendicular to the c-axis, peaks often appear around 2θ of 56°. This peak originates from the (110) plane of the InGaZnO4 crystal. Here, the analysis (φ scan) is performed under the condition that 2θ is fixed near 56° and the sample is rotated about the normal vector of the sample surface (φ axis). In the case where the sample is a single-crystalline oxide semiconductor film of InGaZnO4, six peaks appear. These six peaks originate from crystal planes equivalent to the (110) plane. On the other hand, in the case where the sample is a CAAC-OS film, no distinct peaks can be observed even when φ scan is performed with 2θ fixed near 56°.

[0346] From the above results, it can be seen that in the CAAC-OS film with c-axis orientation, although the directions of the a-axis and b-axis are different between crystal parts, the c-axis is oriented in a direction parallel to the normal vector of the formed surface or the top surface. Therefore, each metal atom layer arranged in a layered manner observed in the above cross-sectional TEM image corresponds to a plane parallel to the ab plane of the crystal.

[0347] Note that the crystal parts are formed when forming the CAAC-OS film or performing crystallization treatment such as heat treatment. As described above, the c-axis of the crystal is oriented in a direction parallel to the normal vector of the formed surface or the top surface of the CAAC-OS film. Thus, for example, when the shape of the CAAC-OS film is changed by etching or the like, the c-axis is not necessarily parallel to the normal vector of the formed surface or the top surface of the CAAC-OS film.

[0348] In addition, in the CAAC-OS film, the distribution of the c-axis oriented crystallization parts is not necessarily uniform. For example, when the crystal parts of the CAAC-OS film are formed by crystal growth near the top surface of the CAAC-OS film, the proportion of the c-axis oriented crystal parts near the top surface is sometimes higher than the crystallinity near the formed surface. Also, when impurities are added to the CAAC-OS film, the region where the impurities are added deteriorates, and sometimes the proportion of the c-axis oriented crystal parts in the CAAC-OS film varies depending on the region.

[0349] Note that when a CAAC-OS film including InGaZnO4 crystals is analyzed using an out-of-plane method, in addition to a peak near 2θ of 31°, a peak near 2θ of 36° is sometimes observed. The peak near 2θ of 36° means that a portion of the CAAC-OS film contains crystals that do not have a c-axis orientation. Preferably, a peak appears near 2θ of 31° in the CAAC-OS film, and no peak appears near 2θ of 36°.

[0350] The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities refer to elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, the bonding force between an element such as silicon and oxygen is stronger than the bonding force between the metal elements constituting the oxide semiconductor film and oxygen. This element will take away the oxygen in the oxide semiconductor film, thereby disrupting the atomic arrangement of the oxide semiconductor film, resulting in a decrease in crystallinity. In addition, since heavy metals such as iron or nickel, argon, carbon dioxide, etc. have large atomic radii (or molecular radii), if they are contained in the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film will be disrupted, resulting in a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film sometimes become carrier traps or carrier generation sources.

[0351] The CAAC-OS film is an oxide semiconductor film with a low defect state density. Oxygen vacancies in the oxide semiconductor film may become carrier traps or may become carrier generation sources by capturing hydrogen.

[0352] The state of low impurity concentration and low defect state density (low oxygen vacancy) is called "high-purity intrinsic" or "substantially high-purity intrinsic". In the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film, there are few carrier generation sources, so the carrier density can be reduced. Therefore, transistors including the oxide semiconductor film rarely have a negative threshold voltage (also called normally-on). High-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have very few carrier traps. Therefore, transistors including the oxide semiconductor film have very small changes in electrical characteristics and high reliability. The charge captured by the carrier trap of the oxide semiconductor film takes a long time until it is released, and sometimes behaves like a fixed charge. Therefore, the electrical characteristics of transistors including oxide semiconductor films with high impurity concentrations and high defect state density are sometimes unstable.

[0353] In an OS transistor using a CAAC-OS film, variation in electric characteristics due to irradiation with visible light or ultraviolet light is small.

[0354] Next, a microcrystalline oxide semiconductor film is described.

[0355] In the TEM image of the microcrystalline oxide semiconductor film, the crystalline part cannot sometimes be clearly identified. The size of the crystalline part contained in the microcrystalline oxide semiconductor film is mostly 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, microcrystals having a size of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less are called nanocrystals (nc: nanocrystal). An oxide semiconductor film including nanocrystals is called an nc-OS (nanocrystalline Oxide Semiconductor) film. For example, in the image of the nc-OS film obtained by TEM, the grain boundary cannot sometimes be clearly identified. Note that nc-OS can also be called an oxide semiconductor including randomly oriented nanocrystals (RANC: Random Aligned Nanocrystals) or an oxide semiconductor including non-aligned nanocrystals (NANC: Non-Aligned Nanocrystals).

[0356] In the nc-OS film, a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less) has a periodic atomic arrangement. In the nc-OS film, no regularity of crystal orientation can be observed between different crystalline parts. Therefore, no orientation can be observed in the whole film. So, sometimes the nc-OS film has no difference from the amorphous oxide semiconductor film in some analysis methods. For example, when performing a structure analysis of the nc-OS film by an out-of-plane method using an XRD apparatus using X-rays having a beam diameter larger than the diameter of the crystalline part, no peak indicating a crystal plane can be detected. Further, when performing electron diffraction (also called selected area electron diffraction) using an electron beam having a beam diameter larger than the diameter of the crystalline part (for example, 50 nm or more) on the nc-OS film, a diffraction pattern similar to a halo pattern is observed. On the other hand, when performing electron diffraction using an electron beam having a beam diameter close to or smaller than the diameter of the crystalline part on the nc-OS film, spots are observed. In addition, in the nano-beam electron diffraction pattern of the nc-OS film, a region having a high brightness like a circle (ring-shaped) is sometimes observed. In the nano-beam electron diffraction pattern of the nc-OS film, multiple spots in the ring-shaped region are sometimes also observed (see Figure 32B ).

[0357] Since the nc-OS film is an oxide semiconductor film having a higher regularity than the amorphous oxide semiconductor film, the density of defect states of the nc-OS film is lower than that of the amorphous oxide semiconductor film. However, no regularity of crystal orientation can be observed between different crystalline parts of the nc-OS film. Therefore, the density of defect states of the nc-OS film is higher than that of the CAAC-OS film.

[0358] Note that the oxide semiconductor film may also be a stacked film including two or more of an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, and a CAAC-OS film, for example.

[0359] In the case where the oxide semiconductor film has a plurality of structures, structural analysis can sometimes be performed by using nanobeam electron diffraction.

[0360] Figure 32C There is shown a transmission electron diffraction measurement apparatus including: an electron gun chamber 10; an optical system 12 below the electron gun chamber 10; a sample chamber 14 below the optical system 12; an optical system 16 below the sample chamber 14; an observation chamber 20 below the optical system 16; an imaging device 18 installed in the observation chamber 20; and a film chamber 22 below the observation chamber 20. The imaging device 18 is provided so as to face the inside of the observation chamber 20. Note that the film chamber 22 does not necessarily have to be provided.

[0361] Figure 32D There is shown Figure 32C the structure inside the transmission electron diffraction measurement apparatus shown. In the transmission electron diffraction measurement apparatus, electrons emitted from an electron gun provided in the electron gun chamber 10 are irradiated onto a substance 28 disposed in the sample chamber 14 through the optical system 12. The electrons passing through the substance 28 are incident on a fluorescent plate 32 provided inside the observation chamber 20 through the optical system 16. On the fluorescent plate 32, a transmission electron diffraction pattern can be measured by presenting a pattern corresponding to the intensity of the incident electrons.

[0362] Since the imaging device 18 is provided to face the fluorescent plate 32, the pattern on the fluorescent plate 32 can be imaged. The angle formed by a straight line passing through the middle part of the lens of the imaging device 18 and the middle part of the fluorescent plate 32 and the top surface of the fluorescent plate 32 is, for example, 15° or more and 80° or less, 30° or more and 75° or less, or 45° or more and 70° or less. The smaller this angle is, the greater the strain of the transmission electron diffraction pattern imaged by the imaging device 18. Note that if this angle is known in advance, the strain of the obtained transmission electron diffraction pattern can be corrected. Note that the imaging device 18 may sometimes be provided in the film chamber 22. For example, the imaging device 18 may be provided in the film chamber 22 so as to be opposite to the incident direction of the electrons 24. In this case, a transmission electron diffraction pattern with less strain can be imaged from the back surface of the fluorescent plate 32.

[0363] In the sample chamber 14, a holder for fixing the substance 28 is provided. The holder has a structure that allows electrons passing through the substance 28 to pass through. For example, the holder may also have a function of moving the substance 28 in the X-axis, Y-axis, Z-axis, etc. The moving function of the holder only needs to have an accuracy of moving within a range such as 1 nm or more and 10 nm or less, 5 nm or more and 50 nm or less, 10 nm or more and 100 nm or less, 50 nm or more and 500 nm or less, 100 nm or more and 1 μm or less, etc. As for these ranges, the most suitable range can be set according to the structure of the substance 28.

[0364] Next, a method for measuring the transmission electron diffraction pattern of a substance using the above transmission electron diffraction measurement device will be described.

[0365] For example, as Figure 32D shown, by changing the irradiation position (scanning) of the electrons 24 of the nanobeam in the substance, it is possible to confirm the situation where the structure of the substance gradually changes. At this time, when the substance 28 is a CAAC-OS film, the diffraction pattern shown in Figure 32A can be observed. When the substance 28 is an nc-OS film, the diffraction pattern shown in Figure 32B can be observed.

[0366] Even when the substance 28 is a CAAC-OS film, sometimes a diffraction pattern similar to that of an nc-OS film, etc. is partially observed. Therefore, sometimes the quality of the CAAC-OS film can be represented by the ratio of the area where the diffraction pattern of the CAAC-OS film is observed within a certain range (also called the CAAC rate). For example, the CAAC rate of an excellent CAAC-OS film is 50% or more, preferably 80% or more, more preferably 90% or more, and further preferably 95% or more. Note that the ratio of the area where a diffraction pattern different from that of the CAAC-OS film is observed is expressed as the non-CAAC rate.

[0367] For example, a transmission electron diffraction pattern is obtained while scanning the top surface of each sample of a CAAC-OS film just after deposition (expressed as "as-sputtered") or a CAAC-OS film heat-treated at 450 °C in an oxygen-containing atmosphere. Here, while scanning at a speed of 5 nm / second for 60 seconds, the diffraction pattern is observed, and the observed diffraction pattern is converted into a static image every 0.5 seconds, thereby deriving the CAAC rate. Note that a nanobeam with a beam diameter of 1 nm is used as the electron beam. The same measurement is performed on six samples. The CAAC rate is calculated using the average value of the six samples.

[0368] Figure 33AThe CAAC conversion rates of the respective samples are shown. The CAAC conversion rate of the CAAC-OS film just after film formation is 75.7% (the non-CAAC conversion rate is 24.3%). The CAAC conversion rate of the CAAC-OS film after heat treatment at 450 °C is 85.3% (the non-CAAC conversion rate is 14.7%). From this, it can be seen that the CAAC conversion rate after heat treatment at 450 °C is higher than that just after film formation. That is to say, it can be known that heat treatment at a high temperature (for example, 400 °C or higher) reduces the non-CAAC conversion rate (increases the CAAC conversion rate). In addition, a CAAC-OS film having a high CAAC conversion rate can also be obtained when heat treatment below 500 °C is performed.

[0369] Here, most of the diffraction patterns different from those of the CAAC-OS film are the same as those of the nc-OS film. In addition, no amorphous oxide semiconductor film is observed in the measurement region. From this, it can be seen that by heat treatment, the regions having the same structure as the nc-OS film are rearranged under the influence of the structure of the adjacent regions, and thus these regions become CAAC.

[0370] Figure 33B and Figure 33C are plan-view TEM images of the CAAC-OS film just after film formation and after heat treatment at 450 °C. By comparing Figure 33B and Figure 33C it can be seen that the properties of the CAAC-OS film after heat treatment at 450 °C are more uniform. That is to say, it can be known that the properties of the CAAC-OS film are improved by heat treatment at a high temperature.

[0371] By adopting this measurement method, structural analysis of an oxide semiconductor film having a plurality of structures can sometimes be performed.

[0372] The CAAC-OS film can be formed, for example, by the following method.

[0373] The CAAC-OS film is formed, for example, using a polycrystalline oxide semiconductor sputtering target and by a sputtering method.

[0374] By increasing the substrate temperature during film formation, the sputtered particles migrate after reaching the substrate. Specifically, the substrate temperature during film formation is set to 100 °C or higher and 740 °C or lower, preferably 200 °C or higher and 500 °C or lower. By increasing the substrate temperature during film formation, the flaky or pellet-shaped sputtered particles migrate on the substrate when they reach the substrate, and thus the flat surfaces of the sputtered particles adhere to the substrate. At this time, the sputtered particles are positively charged so that the sputtered particles repel each other and adhere to the substrate, and thus the sputtered particles do not overlap unevenly, and a CAAC-OS film having a uniform thickness can be formed.

[0375] By reducing the amount of impurities mixed into the CAAC-OS film during film formation, the disruption of the crystalline state due to impurities can be suppressed. For example, it is sufficient to reduce the concentration of impurities (such as hydrogen, water, carbon dioxide, and nitrogen) present in the film formation chamber. Alternatively, it is sufficient to reduce the impurity concentration in the film formation gas. Specifically, a film formation gas with a dew point of -80°C or lower, preferably -100°C or lower, is used.

[0376] In addition, it is preferable to reduce plasma damage during film formation by increasing the oxygen ratio in the film formation gas and optimizing the power. The oxygen ratio in the film formation gas is set to 30 vol.% or more, preferably 100 vol.%.

[0377] Alternatively, the CAAC-OS film is formed using the following method.

[0378] First, a first oxide semiconductor film with a thickness of 1 nm or more and less than 10 nm is formed. The first oxide semiconductor film is formed by sputtering. Specifically, the formation conditions for the first oxide semiconductor film are as follows: the substrate temperature is 100°C or more and 500°C or less, preferably 150°C or more and 450°C or less; and the oxygen ratio in the film formation gas is 30 vol.% or more, preferably 100 vol.%.

[0379] Next, a heat treatment is performed to form the first oxide semiconductor film into a highly crystalline first CAAC-OS film. The temperature of the heat treatment is set to 350°C or more and 740°C or less, preferably 450°C or more and 650°C or less. The time of the heat treatment is set to 1 minute or more and 24 hours or less, preferably 6 minutes or more and 4 hours or less. The heat treatment can be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, the heat treatment is first performed in an inert atmosphere and then in an oxidizing atmosphere. By performing the heat treatment in an inert atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, when the heat treatment is performed in an inert atmosphere, oxygen defects sometimes form in the first oxide semiconductor film. In this case, by performing the heat treatment in an oxidizing atmosphere, the oxygen deficiency can be reduced. Note that the heat treatment can also be performed under reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film can be reduced in a shorter time.

[0380] By setting the thickness of the first oxide semiconductor film to 1 nm or more and less than 10 nm, it can be more easily crystallized by heat treatment compared to the case where the thickness is 10 nm or more.

[0381] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed with a thickness of 10 nm or more and 50 nm or less. The second oxide semiconductor film is formed using a sputtering method. Specifically, the substrate temperature is 100°C or more and 500°C or less, preferably 150°C or more and 450°C or less; and the oxygen ratio in the film-forming gas is 30 vol.% or more, preferably 100 vol.%.

[0382] Next, a heat treatment is performed to cause solid-phase growth of the second oxide semiconductor film from the first CAAC-OS film to form a highly crystalline second CAAC-OS film. The temperature of the heat treatment is set to 350°C or more and 740°C or less, preferably 450°C or more and 650°C or less. The time of the heat treatment is set to 1 minute or more and 24 hours or less, preferably 6 minutes or more and 4 hours or less. The heat treatment can be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, the heat treatment is first performed in an inert atmosphere and then in an oxidizing atmosphere. By performing the heat treatment in an inert atmosphere, the impurity concentration of the second oxide semiconductor film can be reduced in a short time. On the other hand, when the heat treatment is performed in an inert atmosphere, oxygen defects sometimes form in the second oxide semiconductor film. In this case, by performing the heat treatment in an oxidizing atmosphere, the oxygen defects can be reduced. Note that the heat treatment can also be performed under reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced in a shorter time.

[0383] Through the above steps, a CAAC-OS film with a total thickness of 10 nm or more can be formed.

[0384] This embodiment makes changes, additions, corrections, deletions, applications, generalization, or specialization to a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0385] Embodiment 9

[0386] In other embodiments, various examples are shown. Note that one aspect of the present invention is not limited to the above examples.

[0387] For example, in this specification and the like, transistors of various structures can be used without restricting the type. For example, a transistor having single-crystalline silicon or a transistor having a non-single-crystalline semiconductor film represented by amorphous silicon, polycrystalline silicon, or microcrystalline (also referred to as microcrystalline, nanocrystalline, semi-amorphous) silicon, etc. can be used. Alternatively, a thin-film transistor (TFT) obtained by thinning these semiconductor films can be used. When using a TFT, there are various advantages. For example, since it can be manufactured at a lower temperature than when using single-crystalline silicon, reduction of manufacturing cost or enlargement of manufacturing equipment can be achieved. Since the manufacturing equipment can be made larger, a TFT can be formed using a large substrate. Thereby, many display devices can be formed simultaneously at low cost. Alternatively, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Thereby, a transistor can be formed using a light-transmissive substrate. Alternatively, a transistor formed from a light-transmissive substrate can be used to control the light transmission in a display element. Alternatively, since the thickness of the transistor is thin, a part of the film forming the transistor can transmit light. Thereby, the aperture ratio can be increased.

[0388] Note that when manufacturing polycrystalline silicon, the crystallinity can be further improved by using a catalyst (such as nickel), and thereby a transistor with good electrical characteristics can be formed. As a result, a gate drive circuit (scan line drive circuit), a source drive circuit (signal line drive circuit), and a signal processing circuit (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) can be formed on the same substrate.

[0389] Note that by using a catalyst (such as nickel) in forming microcrystalline silicon, the crystallinity can be further improved, and a transistor with good electrical characteristics can be formed. At this time, the crystallinity can be improved only by performing heat treatment without laser irradiation. As a result, a gate drive circuit (scan line drive circuit) and a part of the source drive circuit (such as an analog switch) can be formed on the same substrate. Note that in the case of not performing laser irradiation for crystallization, unevenness of silicon crystallinity can be suppressed. Therefore, an image with improved image quality can be displayed. Note that polycrystalline silicon or microcrystalline silicon can also be formed without using a catalyst (nickel), etc.

[0390] Note that although it is preferable to increase the crystallinity of silicon to polycrystalline or microcrystalline in the entire panel, the crystallinity of the silicon of the present invention is not limited thereto. The crystallinity of silicon may be increased only in a part of the panel. By selectively irradiating a laser or the like, the crystallinity can be selectively increased. For example, a laser may be irradiated only to the peripheral drive circuit region which is an area other than the pixels. Alternatively, a laser may be irradiated only to areas such as the gate drive circuit and the source drive circuit. Or, a laser may be irradiated only to a part (e.g., analog switch) of the source drive circuit. As a result, the crystallization of silicon can be increased only in the area where it is necessary to operate the circuit at high speed. Since there is no particular need for the pixel area to operate at high speed, the pixel circuit can operate normally even if the crystallinity is not increased. Thus, since the area where the crystallinity is increased is small, the manufacturing process can also be reduced. As a result, the production capacity can be increased and the manufacturing cost can be reduced. In addition, since the number of manufacturing apparatuses required is small, the manufacturing cost can be reduced.

[0391] Examples of transistors include transistors including compound semiconductors (e.g., SiGe, GaAs) or oxide semiconductors (e.g., ZnO, InGaZnO, indium zinc oxide (IZO), indium tin oxide (ITO), SnO, TiO, AlZnSnO (AZTO), In-Sn-Zn-O (ITZO)), etc., and thin film transistors including these compound semiconductors or oxide semiconductors thinned. Thereby, the manufacturing temperature can be reduced, so that, for example, transistors can be formed at room temperature. As a result, transistors can be directly formed on a substrate with low heat resistance, such as a plastic substrate or a thin film substrate. Note that these compound semiconductors or oxide semiconductors are used not only for the channel portion of the transistor, but also for other uses. For example, these compound semiconductors or oxide semiconductors can be used as wirings, resistance elements, pixel electrodes, light-transmissive electrodes, etc. Since these elements can be formed simultaneously with the transistor, the cost can be reduced.

[0392] Note that, for example, transistors formed by an inkjet method or a printing method can be used. Thereby, such transistors can be formed at room temperature, formed at a low vacuum degree, or formed using a large substrate. Thus, transistors can be formed without using a mask (reticule), so that the layout of the transistors can be changed more easily. Or, since transistors can be formed without using a resist, the material cost can be reduced and the number of processes can be reduced. Also, since a film can be formed only on a required part, compared with a manufacturing method in which a film is formed on the entire surface and then etched, materials are not wasted, and thus the cost can be reduced.

[0393] Note that, for example, a transistor having an organic semiconductor or a carbon nanotube can be used. Thus, a transistor can be formed on a substrate that can be bent. A device using a transistor having an organic semiconductor or a carbon nanotube is shock-resistant.

[0394] Note that transistors having various structures can be used. For example, MOS transistors, junction transistors, bipolar transistors, etc. can be used. Since small-sized MOS transistors are used, a large number of transistors can be mounted. Note that an MOS transistor and a bipolar transistor can also be formed on one substrate, where low power consumption, miniaturization, high-speed operation, etc. can be achieved.

[0395] Note that, for example, in this specification and the like, a multi-gate structure transistor having two or more gate electrodes can be adopted. When the multi-gate structure is adopted, since the channel regions are connected in series, it becomes a structure in which a plurality of transistors are connected in series. Therefore, by adopting the multi-gate structure, the off-state current can be reduced and the breakdown voltage of the transistor (reliability is improved) can be increased. Or, by using the multi-gate structure, when the transistor operates in the saturation region, even if the voltage between the drain and the source fluctuates, the change in the current between the drain and the source is not too large, so that a voltage-current characteristic with a flat slope angle can be obtained. By using the voltage-current characteristic with a flat slope angle, an ideal current source circuit or an active load with an extremely high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be obtained.

[0396] Note that, for example, a transistor having a structure in which gate electrodes are arranged above and below the channel can be used. By adopting a structure in which gate electrodes are arranged above and below the channel, a plurality of transistors are connected in parallel. Therefore, since the channel region increases, the current value can be increased. When a structure in which gate electrodes are arranged above and below the channel is adopted, a depletion layer is easily formed, so that the subthreshold swing (S value) can be improved.

[0397] Note that, for example, a transistor having a structure in which a gate electrode is formed on the channel region, a structure in which a gate electrode is arranged under the channel region, an interleaved structure, a de-interleaved structure, a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or a structure in which the channel regions are connected in series, etc. can also be used. As the transistor, transistors having various structures such as a planar type, a FIN (fin) type, a TRI-GATE (triple-gate) type, a top-gate type, a bottom-gate type, a double-gate type (gate electrodes are arranged above and below the channel), etc. can be used.

[0398] Note that, for example, a transistor having a structure in which the channel region (or a part thereof) overlaps with the source electrode or the drain electrode can be used. When a structure in which the channel region (or a part thereof) overlaps with the source electrode or the drain electrode is adopted, it is possible to prevent unstable operation caused by charge accumulation in a part of the channel region.

[0399] Note that, for example, a transistor having a structure provided with an LDD region can be used. By providing the LDD region, the off-state current can be reduced or the breakdown voltage of the transistor can be increased (reliability is improved). Alternatively, by providing the LDD region, when the transistor operates in the saturation region, even if the voltage between the drain and the source fluctuates, the change in the leakage current is not so large, and thus a voltage-current characteristic with a flat slope angle can be obtained.

[0400] For example, in the present specification and the like, various substrates can be used to form transistors. There is no particular limitation on the type of the substrate. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a bonded film, a paper or a base film containing fibrous materials, etc. Examples of the glass substrate include barium borosilicate glass, aluminosilicate glass, soda-lime glass, etc. Examples of the flexible substrate, the bonded film, the base film, etc. are as follows: plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES); synthetic resins such as acrylic resins; polypropylene; polyester; polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide; aromatic polyamide; epoxy resin; an inorganic vapor deposition film; and papers. In particular, when manufacturing a transistor using a semiconductor substrate, a single crystal substrate, an SOI substrate, etc., a transistor with small non-uniformity in characteristics, dimensions, shape, etc., high current capacity, and small size can be formed. By using the above transistors to form a circuit, low power consumption or high integration of the circuit can be achieved.

[0401] Note that a single substrate can also be used to form a transistor and then the transistor can be transferred onto another substrate. Examples of the substrate onto which the transistor is transferred include not only the substrates that can form transistors described above, but also a paper substrate, a glassine substrate, an aromatic polyamide film substrate, a polyimide film substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or regenerated fibers (acetate fiber, cuprammonium fiber, rayon, regenerated polyester), etc.), a leather substrate, a rubber substrate, etc. By using the above substrates, formation of a transistor with good characteristics, formation of a transistor with low power consumption, manufacture of a device that is not easily damaged, improvement of heat resistance, light weight, or thinning can be achieved.

[0402] Note that all the circuits required to achieve a specified function can be formed on the same substrate (e.g., a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, etc.). In this way, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connections between circuit components.

[0403] Note that it is not necessarily required to form all the circuits required to achieve the specified function using a single substrate. In other words, it is also possible to form a part of the circuits required to achieve the specified function using a certain substrate and form another part of the circuits required to achieve the specified function using another substrate. For example, it is also possible to form a part of the circuits required to achieve the specified function using a glass substrate and form another part of the circuits required to achieve the specified function using a single crystal substrate (or an SOI substrate). The single crystal substrate (also referred to as an IC chip) forming another part of the circuits required to achieve the specified function can be connected to the glass substrate through COG (Chip On Glass), thereby disposing the IC chip on the glass substrate. Alternatively, the IC chip and the glass substrate can be connected using TAB (Tape Automated Bonding), COF (Chip On Film), SMT (Surface Mount Technology), or a printed circuit board, etc. When a part of the circuit is formed on the same substrate as the pixel portion, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connections between the circuit components. In particular, in many cases, the power consumption of the circuit in the part with a high driving voltage or the part with a high driving frequency is high. Thus, the circuit is formed on a different substrate (for example, a single crystal substrate) from the pixel portion to form an IC chip. By using this IC chip, an increase in power consumption can be prevented.

[0404] In addition, an invention other than the content not specified in the drawings or text of this specification can be constituted. In addition, when a range of a certain value (for example, an upper limit value, a lower limit value, etc.) is described, by arbitrarily narrowing the range or removing a part of the range, an invention removing a part of the range can be specified. Thus, for example, it can be specified that the prior art is not included in the technical scope of the present invention.

[0405] As a specific example, a circuit diagram including a first transistor to a fifth transistor is shown. In this case, it can be specified that the circuit does not include a sixth transistor in the invention. In addition, it can be specified that the circuit does not include a capacitor in the invention. Furthermore, it can be specified that the circuit does not include a sixth transistor having a specific connection structure in the invention. Or, it can be specified that the circuit does not include a capacitor having a specific connection structure in the invention. For example, it can be specified that the invention does not include a sixth transistor whose gate is connected to the gate of the third transistor. For example, it can be specified that the invention does not include a capacitor whose first electrode is connected to the gate of the third transistor.

[0406] As other specific examples, regarding a certain value, it is described that "a certain voltage is preferably 3V or more and 10V or less". In this case, for example, it can be stipulated that the invention does not include the case where the voltage is -2V or more and 1V or less. For example, it can be stipulated that the invention does not include the case where the voltage is 13V or more. Note that, for example, it can be stipulated that in the invention, the voltage is 5V or more and 8V or less. For example, it can be stipulated that in the invention, the voltage is approximately 9V. For example, it can be stipulated that in the invention, the voltage is 3V or more and 10V or less but not 9V.

[0407] As other specific examples, it is described that "a certain voltage is preferably 10V". In this case, for example, it can be stipulated that the invention does not include the case where the voltage is -2V or more and 1V or less. For example, it can be stipulated that the invention does not include the case where the voltage is 13V or more.

[0408] As other specific examples, regarding the property of a certain substance, it is described that "a certain film is an insulating film". In this case, for example, it can be stipulated that the invention does not include the case where the insulating film is an organic insulating film. For example, it can be stipulated that the invention does not include the case where the insulating film is an inorganic insulating film.

[0409] As other specific examples, regarding a certain laminated structure, it is described that "a certain film is provided between A and B". In this case, for example, it can be stipulated that the invention does not include the case where the film is a laminated film of four or more layers. For example, it can be stipulated that the invention does not include the case where a conductive film is provided between A and the film.

[0410] Note that various persons can implement the invention described in this specification and the like. However, sometimes different persons participate in the implementation of the invention. For example, in the case of a transceiver system, sometimes Company A manufactures and sells a transmitter, and Company B manufactures and sells a receiver. As another example, in the case of a light-emitting device having a TFT and a light-emitting element, sometimes Company A manufactures and sells a semiconductor device including a TFT, and then, Company B purchases the semiconductor device and configures a light-emitting element in the semiconductor device to complete the light-emitting device.

[0411] In this case, one way of the invention that can be claimed for infringement against both Company A and Company B is constituted. Therefore, one way of the invention that can be claimed for infringement against Company A or Company B is clear, and it can be determined that it is described in this specification and the like. For example, in the case of a transceiver system, one way of the invention can be constituted only by a transmitter, and one way of the invention can also be constituted only by a receiver. These ways of the invention are clear, and it can be determined that they are described in this specification and the like. As another example, in the case of a light-emitting device including a TFT and a light-emitting element, one way of the invention can be constituted only by a semiconductor device including a TFT, and one way of the invention can also be constituted by a light-emitting device having a TFT and a light-emitting element. These ways of the invention are clear, and it can be determined that they are described in this specification and the like.

[0412] Note that in this specification and the like, even if all the connection parts of the terminals of active elements (such as transistors and diodes) and passive elements (such as capacitors and resistive elements) are not specified, those of ordinary skill in the art can constitute one way of the invention. In other words, even if the connection parts are not specified, it can be said that one way of the invention is clear. And when the content specifying the connection parts is described in this specification and the like, it can sometimes be determined that one way of the invention without specifying the connection parts is described in this specification and the like. Especially when there may be multiple terminal connection parts, it is not necessary to specify the connection parts of the terminals. Therefore, sometimes by only specifying the connection parts of a part of the terminals of active elements (such as transistors and diodes) and passive elements (such as capacitors and resistive elements), one way of the invention can be constituted.

[0413] Note that in this specification and the like, as long as at least the connection parts of a certain circuit are specified, those of ordinary skill in the art can sometimes constitute the invention. Or, as long as at least the function of a certain circuit is specified, those of ordinary skill in the art can sometimes constitute the invention. In other words, as long as the function is specified, it can be said that one way of the invention is clear. In addition, it can sometimes be determined that one way of the invention specifying the function is described in this specification and the like. Therefore, even if the function of a certain circuit is not specified, as long as the connection parts are specified, the circuit is one way of the disclosed invention and can constitute one way of the invention. In addition, even if the connection parts of a certain circuit are not specified, as long as its function is specified, the circuit is one way of the disclosed invention and can constitute one way of the invention.

[0414] Note that in this specification and the like, in one embodiment, a part can be taken from the attached drawings or the text shown in a certain embodiment to form one aspect of the invention. Therefore, when there is a drawing or text describing a certain part, the content of the part of the drawing or text taken out is also one aspect of the disclosed invention and can form one aspect of the invention. Thus, for example, in a drawing or text that describes one or more of active elements (transistors, diodes, etc.), wirings, passive elements (capacitors, resistance elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, working methods, manufacturing methods, etc., a part can be taken to form one aspect of the invention. For example, M circuit elements (transistors, capacitors, etc.; M is an integer, M < N) can be taken from a circuit diagram composed of N circuit elements (transistors, capacitors, etc.; N is an integer) to form one aspect of the invention. As another example, M layers (M is an integer, M < N) can be taken from a cross-sectional view composed of N (N is an integer) layers to form one aspect of the invention. As another example, M elements (M is an integer, M < N) can be taken from a flowchart composed of N (N is an integer) elements to form one aspect of the invention.

[0415] Note that in this specification and the like, when at least one specific example is described in the attached drawings or text shown in a certain embodiment, a person of ordinary skill in the art can easily understand the fact that the upper concept of the specific example is derived from the specific example. Therefore, when at least one specific example is described in the attached drawings or text shown in a certain embodiment, the upper concept of the specific example is also one aspect of the disclosed invention and can form one aspect of the invention.

[0416] Note that in this specification and the like, at least the content described in the attached drawings (which can also be a part thereof) is one aspect of the invention and can form one aspect of the invention. Therefore, as long as a certain content is described in the attached drawings, even if it is not described in text, the content is also one aspect of the disclosed invention and can form one aspect of the invention. Similarly, a part of the attached drawing taken out is also one aspect of the disclosed invention and can form one aspect of the invention.

[0417] Note that in the attached drawings, for clarity, sometimes the sizes, thicknesses of layers, or areas are exaggerated. Therefore, the present invention is not necessarily limited to such dimensions.

[0418] In this specification, for example, when defining the shape of an object using terms such as "diameter", "particle diameter (diameter)", "size", "dimension", "width", etc., it can also be replaced with the length of one side of the smallest cube that can accommodate the object or the equivalent circle diameter of a cross-section of the object. The "equivalent circle diameter of a cross-section of an object" refers to the diameter of a perfect circle that is equal to the area of a cross-section of the object.

[0419] Note that, for example, when the conductivity is sufficiently low, "semiconductor" sometimes includes the characteristics of "insulator". In addition, sometimes the boundary between "semiconductor" and "insulator" is blurred, and it is not possible to strictly distinguish between "semiconductor" and "insulator". Therefore, sometimes the "semiconductor" described in this specification can be replaced with "insulator". Similarly, sometimes the "insulator" described in this specification can be replaced with "semiconductor".

[0420] Note that, for example, when the conductivity is sufficiently high, "semiconductor" sometimes includes the characteristics of "conductor". In addition, sometimes the boundary between "semiconductor" and "conductor" is blurred, and it is not possible to strictly distinguish between "semiconductor" and "conductor". Therefore, sometimes the "semiconductor" described in this specification can be replaced with "conductor". Similarly, sometimes the "conductor" described in this specification can be replaced with "semiconductor".

[0421] Note that impurities in a semiconductor film, for example, refer to elements other than the main components that make up the semiconductor film. For example, an element with a concentration lower than 0.1 atomic% is an impurity. When impurities are included, for example, carrier traps may sometimes be formed in the semiconductor film, resulting in a decrease in carrier mobility or crystallinity. In the case where the semiconductor film is an oxide semiconductor film, examples of impurities that change the characteristics of the semiconductor film include Group 1 elements, Group 2 elements, Group 14 elements, Group 15 elements, transition metals other than the main components, etc. In particular, for example, there are hydrogen (including water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. In the case of using an oxide semiconductor, oxygen deficiency may be formed due to the mixing of impurities. In addition, when the semiconductor film is a silicon film, examples of impurities that change the characteristics of the semiconductor film include Group 1 elements, Group 2 elements, Group 13 elements, Group 15 elements other than oxygen and hydrogen.

[0422] In this specification, excess oxygen, for example, refers to oxygen that exceeds the stoichiometric composition. Or, excess oxygen, for example, refers to oxygen released by heating. Excess oxygen can move inside a film or layer. Excess oxygen moves between the atoms in a film or layer, or excess oxygen moves one by one like billiard balls while displacing the oxygen that makes up the film or layer. An insulating film containing excess oxygen, for example, has the function of releasing oxygen through heat treatment.

[0423] In this specification, "parallel" means a state in which two straight lines are arranged within an angle range of more than -10° and less than 10°. Therefore, it also includes a state in which the angle is more than -5° and less than 5°. In addition, "perpendicular" means a state in which two straight lines are arranged within an angle range of more than 80° and less than 100°. Therefore, it also includes a state in which the angle is more than 85° and less than 95°.

[0424] In this embodiment, as the conductive film, for example, a single layer or a stack of conductive films containing aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, ruthenium, silver, tantalum, or tungsten can be used. As the transparent conductive film, for example, oxide films such as In-Zn-W oxide film, In-Sn oxide film, In-Zn oxide film, indium oxide film, zinc oxide film, and tin oxide film can be used. In addition, trace amounts of Al, Ga, Sb, F, etc. can be added to the above oxide films. Furthermore, a metal thin film having a thickness (preferably about 5 nm or more and 30 nm or less) capable of transmitting light can also be used. For example, a 5-nm-thick Ag film, Mg film, or Ag-Mg alloy film can be used. As a film that highly efficiently reflects visible light, for example, a film containing lithium, aluminum, titanium, magnesium, lanthanum, silver, silicon, or nickel can be used.

[0425] As the insulating film, for example, a single layer or a stack of insulating films containing aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide can be used. Alternatively, as the insulating film, a resin film such as a polyimide resin, an acrylic resin, an epoxy resin, or a silicone resin can also be used.

[0426] In this specification, the hexagonal crystal system includes the trigonal crystal system and the rhombohedral crystal system.

[0427] In addition, the terms "first", "second", "third", etc. used in this specification are added to avoid confusion of components and are not used for numerical limitation. Therefore, for example, "first" can be appropriately replaced with "second" or "third", etc.

[0428] In this specification, when an etching process is performed after a photolithography process, the mask formed in the photolithography process is removed.

[0429] Sometimes a second gate for applying a potential to the back channel is provided in the transistor. At this time, in order to distinguish between the two gates here, the terminal usually called the gate is referred to as the "front gate", and the other terminal is referred to as the "back gate".

[0430] Note that voltage refers to the potential difference between two points, while potential refers to the electrostatic energy (potential energy) possessed by a unit charge at a certain point in an electrostatic field. Note that generally, the potential difference between the potential of a certain point and the reference potential (such as the ground potential) is simply referred to as potential or voltage. Usually, potential and voltage are synonyms. Therefore, in this specification, unless otherwise specified, either "potential" can be referred to as "voltage", or "voltage" can be referred to as "potential".

[0431] In this specification and the like, voltage mostly refers to the potential difference between a certain potential and the reference potential (such as the ground potential). Thus, voltage, potential, and potential difference can be respectively interchanged and referred to as potential, voltage, and voltage difference. Note that voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (potential energy) possessed by a unit charge in an electrostatic field.

[0432] Note that generally, potential and voltage are relative values. Therefore, the ground potential is not necessarily limited to 0 volts.

[0433] A transistor is a type of semiconductor device and can perform functions such as current or voltage amplification, and switching operations for controlling conduction or non-conduction. The transistors in this specification include insulated-gate field-effect transistors (IGFETs: Insulated Gate Field Effect Transistors) and thin-film transistors (TFTs: Thin Film Transistors).

[0434] In this specification and the like, a transistor refers to a device that includes at least three terminals: a gate, a drain, and a source. The transistor has a channel region between the drain (drain terminal, drain region, or drain electrode) and the source (source terminal, source region, or source electrode), and current can flow through the drain, the channel region, and the source. Here, since the source and the drain can be interchanged depending on the structure or operating conditions of the transistor, it is difficult to determine which is the source and which is the drain. Therefore, sometimes the part used as the source or the part used as the drain is not referred to as the source or the drain. In this case, for example, sometimes one of the source and the drain is referred to as the first terminal, the first electrode, or the first region, and the other of the source and the drain is referred to as the second terminal, the second electrode, or the second region.

[0435] In this specification and the like, when it is clearly stated that "X is connected to Y", it includes the case where X is electrically connected to Y; the case where X is functionally connected to Y; and the case where X is directly connected to Y. Here, both X and Y are objects (such as devices, components, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to the specified connection relationships shown in the drawings or the text, and connection relationships other than those shown in the drawings or the text are also described in the drawings or the text.

[0436] Examples of the case where X and Y are directly connected include: the case where there is no element (such as a switch, transistor, capacitor, inductor, resistive element, diode, display element, light-emitting element, load, etc.) that can electrically connect X and Y between X and Y; and the case where X and Y are not connected through an element that can electrically connect X and Y.

[0437] For example, in the case where X and Y are electrically connected, one or more elements (such as a switch, transistor, capacitor, inductor, resistive element, diode, display element, light-emitting element, load, etc.) that can electrically connect X and Y can be connected between X and Y. The switch has the function of controlling on and off. In other words, it is controlled whether current flows by making the switch in the conducting state or the non-conducting state (on state or off state). Or, the switch has the function of selecting and switching the current path. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.

[0438] For example, in the case where X and Y are functionally connected, one or more circuits (such as a logic circuit (inverter, NAND circuit, NOR circuit, etc.), a signal conversion circuit such as a DA conversion circuit, an AD conversion circuit, a gamma correction circuit, etc., a potential level conversion circuit such as a power supply circuit (boost circuit, buck circuit, etc.), a level shift circuit that changes the potential level of a signal, etc., a voltage source, a current source, a switching circuit, an amplifier circuit such as a circuit that can increase the signal amplitude or current amount, etc., an operational amplifier, a differential amplifier circuit, a source follower circuit, a buffer circuit, etc., a signal generation circuit, a storage circuit, and / or a control circuit) that can functionally connect X and Y can be connected between X and Y. Note that, for example, even if there are other circuits between X and Y, when the signal output from X is transmitted to Y, it can be said that X and Y are functionally connected. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

[0439] Note that in this specification, etc., the clearly described "X and Y are electrically connected" refers to the case where X and Y are electrically connected (in other words, X and Y are connected with other elements or other circuits in between); the case where X and Y are functionally connected (in other words, X and Y are functionally connected with other circuits in between); and the case where X and Y are directly connected (in other words, X and Y are connected without other elements or other circuits in between). In other words, in this specification, etc., the clearly described "X and Y are electrically connected" is the same as the case described as "connected".

[0440] Note that, for example, the following cases can be expressed in the following ways: the case where the source (or the first terminal, etc.) of the transistor is electrically connected to X through Z1 (or not through Z1), and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through Z2 (or not through Z2); and the case where the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y.

[0441] For example, the above expression methods include "X, Y, the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor and Y are electrically connected in sequence", "the source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor and Y are electrically connected in sequence", and "X is electrically connected to Y through the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are sequentially arranged to be connected to each other". When the connection order in the circuit structure is specified using the same expression methods as these examples, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor can be distinguished to determine the technical scope.

[0442] Other expression methods include "the source (or the first terminal, etc.) of the transistor is electrically connected to X at least through the first connection path, and the first connection path does not have the second connection path, where the second connection path is the path between the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor, Z1 is on the first connection path, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y at least through the third connection path, and the third connection path does not have the second connection path, and Z2 is on the third connection path". Or, it can also be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X through Z1 at least on the first connection path, the first connection path does not have the second connection path, and the second connection path has a connection path through the transistor, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through Z2 at least on the third connection path, and the third connection path does not have the second connection path". Or, it can also be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X through Z1 at least on the first circuit path, the first circuit path does not have the second circuit path, and the second circuit path is the circuit path from the source (or the first terminal, etc.) of the transistor to the drain (or the second terminal, etc.) of the transistor, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through Z2 at least on the third circuit path, and the third circuit path does not have the fourth circuit path, and the fourth circuit path is the circuit path from the drain (or the second terminal, etc.) of the transistor to the source (or the first terminal, etc.) of the transistor". By using the same expression methods as these examples to define the connection paths in the circuit structure, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor can be distinguished to determine the technical scope.

[0443] Note that this expression method is just an example and is not limited to the above expression method. Here, X, Y, Z1, and Z2 are all objects (such as devices, components, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0444] Even if independent components are electrically connected to each other on the circuit diagram, sometimes one component also has the functions of multiple components. For example, when a part of the wiring also serves as an electrode, one conductive film has the functions of two components, namely the wiring and the electrode. Therefore, the scope of "electrically connected" in this specification also includes the case where one conductive film has the functions of multiple components.

[0445] For example, in this specification, etc., when it is clearly stated that "Y is formed on X" or "Y is formed above X", it is not limited to the case where Y is formed directly in contact with X. The above expression methods include the case where X and Y are not in direct contact, that is, the case where other objects are sandwiched between X and Y. Here, X and Y are both objects (such as devices, components, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0446] Thus, for example, when it is explicitly described that layer Y is formed on (or above) layer X, it includes the following two cases: the case where layer Y is formed in direct contact with layer X; and the case where another layer (e.g., layer Z, etc.) is formed in direct contact with layer X, and layer Y is formed in direct contact with the other layer. Note that the other layer (e.g., layer Z, etc.) can be a single layer or multiple layers (laminated layers).

[0447] Similarly, when it is explicitly described that Y is formed above X, it is not limited to the case where Y is in direct contact with X, but also includes the case where other objects are sandwiched between X and Y. Thus, for example, when it is described that layer Y is formed above layer X, it includes the following two cases: the case where layer Y is formed in direct contact with layer X; the case where another layer (e.g., layer Z, etc.) is formed in direct contact with layer X, and layer Y is formed in direct contact with the other layer. Note that the other layer (e.g., layer Z, etc.) can be a single layer or multiple layers (laminated layers).

[0448] Note that when it is explicitly described that Y is formed on top of X, on X, or above X, it also includes the case where Y is formed diagonally above / on the diagonal of X.

[0449] Note that the same applies when Y is formed below X or under X.

[0450] For example, in this specification, etc., words indicating spatial configuration such as "above", "on top", "below", "under", "lateral", "right", "left", "diagonal", "rear", "front", "inner", "outer", or "middle" are often used to simply show the relationship between a certain factor or feature and other factors or features in the drawings. Note that it is not limited to this, and these words indicating spatial configuration can include other directions in addition to the directions described in the drawings. For example, when it is explicitly described that "there is Y above X", it is not limited to the case where Y exists above X. The device in the drawing can be inverted or rotated 180°, so it can also include the case where Y exists below X. Thus, the word "above" can include the "below" direction in addition to the "above" direction. However, it is not limited to this, and the device in the drawing is rotated in various directions, so the word "above" can include other directions such as "lateral", "right", "left", "diagonal", "rear", "front", "inner", "outer", or "middle" in addition to the "above" and "below" directions. In other words, it can be appropriately interpreted according to the situation.

[0451] This embodiment changes, adds, modifies, deletes, applies, generalizes, or specializes a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0452] Description of Reference Numerals

[0453] 10: Electron gun chamber; 12: Optical system; 14: Sample chamber; 16: Optical system; 18: Imaging device; 20: Observation chamber; 22: Film chamber; 32: Fluorescent plate; 101: Housing; 110: Display panel; 111: Display area; 112: Display area; 113: Display area; 114: Display area; 115: Display area; 116: Display area; 121: Icon; 125: Scroll bar; 126: Finger; 150: Electronic device; 153a: Support panel; 155a: Support panel; 155b: Support panel; 201: Area; 202: Image sensor; 203: Lighting element; 204: Lighting image; 205: Subject; 206: Image; 207: Image; 208: Icon; 209: Icon; 300: Touch panel; 301: Display section; 302: Pixel; 302B: Sub-pixel; 302G: Sub-pixel; 302R: Sub-pixel; 302t: Transistor; 303c: Capacitor; 303g(1): Scan line drive circuit; 303g(2): Imaging pixel drive circuit; 303s(1): Image signal line drive circuit; 303s(2): Imaging signal line drive circuit; 303t: Transistor; 308: Imaging pixel; 308p: Photoelectric conversion element; 308t: Transistor; 309: FPC; 310: Substrate; 310a: Barrier film; 310b: Substrate; 310c: Adhesive layer; 311: Wiring; 319: Terminal; 321: Insulating film; 328: Partition wall; 329: Spacer; 350R: Light-emitting element; 351R: Lower electrode; 352: Upper electrode; 353: Layer; 353a: Light-emitting unit; 353b: Light-emitting unit; 354: Intermediate layer; 360: Sealant; 367BM: Light-shielding layer; 367p: Anti-reflection layer; 367R: Coloring layer; 370: Opposing substrate; 370a: Barrier film; 370b: Substrate; 370c: Adhesive layer; 380B: Light-emitting module; 380G: Light-emitting module; 380R: Light-emitting module; 401: Battery; 402: Receiving unit; 403: Communication device; 404: Speaker; 405: Speaker; 500: Touch panel; 500B: Touch panel; 501: Display section; 502R: Sub-pixel; 502t: Transistor; 503c: Capacitor; 503g(1): Scan line drive circuit; 503t: Transistor; 509: FPC; 510: Substrate; 510a: Barrier film; 510b: Substrate; 510c: Adhesive layer; 511: Wiring; 519: Terminal; 521: Insulating film; 528: Partition wall; 550R: Light-emitting element; 560: Sealant; 567BM: Light-shielding layer; 567p: Anti-reflection layer; 567R: Coloring layer; 570: Substrate; 570a: Barrier film; 570b: Substrate; 570c: Adhesive layer; 580R: Light-emitting module; 590: Substrate; 591: Electrode; 592: Electrode; 593: Insulating layer;594: Wiring; 595: Touch sensor; 597: Adhesive layer; 598: Wiring; and 599: Connection layer;

[0454] This application is based on Japanese Patent Application No. 2003-245670, filed with the Japan Patent Office on Nov. 28, 2013, the entire contents of which are incorporated herein by reference.

Claims

1. An electronic device, comprising: a housing; a first display area on a first surface of the housing; a second display area on a second surface opposite to the first surface of the housing; a third display area on a third surface between the first surface and the second surface of the housing; and an image sensor and a lighting element on the second surface of the housing, wherein each of the first display area and the second display area includes a light-emitting element, the first display area is larger than the second display area, the image sensor is configured to capture an image of a subject, and the second display area is configured to display an illumination image when the image sensor captures the image of the subject, the electronic device is configured to control the light of the illumination image according to ambient light around, and the lighting element is configured to increase the illuminance of the subject.

2. An electronic device, comprising: a housing; a first display area on a first surface of the housing; a second display area on a second surface opposite to the first surface of the housing; a third display area on a third surface between the first surface and the second surface of the housing; and an image sensor, a lighting element and a receiving unit on the second surface of the housing, wherein the receiving unit serves as a near-field communication antenna, each of the first display area and the second display area includes a light-emitting element, the first display area is larger than the second display area, the image sensor is configured to capture an image of a subject, the second display area is configured to display an illumination image when the image sensor captures the image of the subject, the electronic device is configured to control the light of the illumination image according to ambient light around, and the lighting element is configured to increase the illuminance of the subject.

3. The electronic device according to claim 1 or 2, wherein the first display area or the second display area is on a flexible display panel.

4. The electronic device according to claim 1 or 2, wherein the first display area or the second display area has a touch sensor function.

5. The electronic device according to claim 1 or 2, wherein different images are configured to be displayed in the first display area and the second display area.

6. The electronic device according to claim 1 or 2, wherein the same image is configured to be displayed in the first display area and the second display area.

7. The electronic device according to claim 1 or 2, wherein the first display area is configured to display a plurality of icons.

8. The electronic device according to claim 1 or 2, wherein, The first display area, the second display area and the third display area are respectively continuously provided on the first surface, the second surface and the third surface of the housing.

Images