Color film substrate, display panel and display device

Abstract

Provided are a color film substrate, a display panel, and a display device. The color film substrate comprises: a base substrate; a color conversion layer disposed on the base substrate; a cover layer disposed on a side of the color conversion layer away from the base substrate; and a polarization layer disposed on a side of the cover layer away from the base substrate, wherein the polarization layer comprises a wire grid polarizer, and the cover layer comprises a first cover sublayer and a second cover sublayer, the first cover sublayer is located on a side of the color conversion layer away from the base substrate, the second cover sublayer is located on a side of the first cover sublayer away from the base substrate, and the material of the first cover sublayer is different from the material of the second cover sublayer.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a color film substrate, a display panel and a display device. Background Art

[0002] Existing liquid crystal display panels usually include a color filter (CF) substrate, an array substrate, a liquid crystal layer and a backlight module, and the liquid crystal layer is arranged between the color filter substrate and the array substrate. A color filter layer (such as a color filter) is arranged on the color filter substrate, and the color filter layer is a key component that enables the display device to be colored. Usually, the color filter layer includes multiple sub-color filter layers such as red, green, and blue. The white light emitted by the backlight module passes through the color filter layer, and the color light resistance of the color filter layer is used to generate red, green, and blue light of three primary colors respectively. However, this display panel with a white backlight source + a conventional color filter layer has defects such as low light efficiency, narrow color gamut, and small viewing angle. Summary of the invention

[0003] In order to solve at least one aspect of the above problems, the present disclosure provides a color film substrate, a display panel and a display device.

[0004] In one aspect, a color film substrate is provided, comprising: a base substrate; a color conversion layer arranged on the base substrate; a covering layer arranged on a side of the color conversion layer away from the base substrate; and a polarization layer arranged on a side of the covering layer away from the base substrate, wherein the polarization layer comprises a wire grid polarizer, and the covering layer comprises a first covering sublayer and a second covering sublayer, the first covering sublayer is located on a side of the color conversion layer away from the base substrate, the second covering sublayer is located on a side of the first covering sublayer away from the base substrate, and a material of the first covering sublayer is different from a material of the second covering sublayer.

[0005] According to some exemplary embodiments, the color film substrate also includes a buffer layer arranged between the covering layer and the polarization layer, the buffer layer includes a first buffer sublayer and a second buffer sublayer, the first buffer sublayer is arranged on a side of the wire grid polarizer close to the base substrate, the second buffer sublayer is arranged on a side of the first buffer sublayer close to the base substrate, and the refractive index of the material of the first buffer sublayer is less than the refractive index of the material of the second buffer sublayer.

[0006] According to some exemplary embodiments, the color film substrate also includes a protective layer arranged on the side of the polarization layer away from the base substrate, the protective layer includes a first protective sublayer and a second protective sublayer, the first protective sublayer is arranged on the side of the wire grid polarizer away from the base substrate, the second protective sublayer is arranged on the side of the first protective sublayer away from the base substrate, and the refractive index of the material of the first protective sublayer is less than the refractive index of the material of the second protective sublayer.

[0007] According to some exemplary embodiments, the color film substrate further includes a filter layer disposed on a side of the color conversion layer close to the base substrate, wherein the filter layer includes a first filter structure, a second filter structure, and a third filter structure, the first filter structure being used to allow light having a first wavelength range to pass through, the second filter structure being used to allow light having a second wavelength range to pass through, the third filter structure being used to allow light having a third wavelength range to pass through, and the first wavelength range, the second wavelength range, and the third wavelength range are different from each other.

[0008] According to some exemplary embodiments, the color conversion layer includes a first quantum dot structure and a second quantum dot structure, the first quantum dot structure is used to convert light with a third wavelength range incident thereon into light with a first wavelength range, and the second quantum dot structure is used to convert light with a third wavelength range incident thereon into light with a second wavelength range, wherein the color film substrate includes a plurality of pixels, each pixel includes at least a first sub-pixel, a second sub-pixel and a third sub-pixel, the first sub-pixel includes the first quantum dot structure and the first filter structure, the second sub-pixel includes the second quantum dot structure and the second filter structure, and the third sub-pixel includes the third filter structure.

[0009] According to some exemplary embodiments, the third sub-pixel further includes a transparent structure, the transparent structure allows light with a third wavelength range incident thereon to directly pass therethrough, and the transparent structure is located on a side of the third filter structure away from the base substrate.

[0010] According to some exemplary embodiments, the orthographic projection of the first quantum dot structure on the substrate falls within the orthographic projection of the first filter structure on the substrate, and the orthographic projection of the second quantum dot structure on the substrate falls within the orthographic projection of the second filter structure on the substrate.

[0011] According to some exemplary embodiments, an orthographic projection of the transparent structure on the base substrate falls within an orthographic projection of the third filter structure on the base substrate.

[0012] According to some exemplary embodiments, the thickness of the first filter structure is equal to the thickness of the second filter structure, the thickness of the first quantum dot structure is equal to the thickness of the second quantum dot structure, the thickness of the third filter structure is equal to the sum of the thicknesses of the first filter structure and the first quantum dot structure, and the thickness of the first filter structure is less than the thickness of the first quantum dot structure.

[0013] According to some exemplary embodiments, the thickness of the first filter structure, the thickness of the second filter structure and the thickness of the third filter structure are equal to each other, the thickness of the first quantum dot structure, the thickness of the second quantum dot structure and the thickness of the transparent structure are equal to each other, and the thickness of the first filter structure is less than the thickness of the first quantum dot structure.

[0014] According to some exemplary embodiments, a thickness of the first cover sublayer is greater than a thickness of the second cover sublayer.

[0015] According to some exemplary embodiments, the second cover sub-layer includes at least a photoinitiator.

[0016] According to some exemplary embodiments, the pitch of the wire grid polarizer is in the range of 100 to 140 nm; and / or the duty cycle of the wire grid polarizer is 0.5; and / or the thickness of the wire grid polarizer is in the range of 150 to 200 nm.

[0017] According to some exemplary embodiments, the thickness of the first buffer sublayer is in the range of 275.5 to 304.5 nm, and the thickness of the second buffer sublayer is in the range of 95 to 105 nm; and / or the thickness of the first protective sublayer is in the range of 427.5 to 472.5 nm, and the thickness of the second protective sublayer is in the range of 47.5 to 52.5 nm.

[0018] According to some exemplary embodiments, the first buffer sublayer and the first protective sublayer are both silicon oxide layers; and / or the second buffer sublayer and the second protective sublayer are both silicon nitride layers.

[0019] According to some exemplary embodiments, the refractive indexes of the first buffer sublayer and the first protective sublayer are both in the range of 1.35 to 1.65; and / or the refractive indexes of the second buffer sublayer and the second protective sublayer are both in the range of 1.6 to 2.0.

[0020] According to some exemplary embodiments, the color filter substrate further includes a black matrix and an isolation dam, the black matrix being located on a side of the filter layer close to the base substrate, and the isolation dam being located on a side of the black matrix away from the base substrate, so as to form a plurality of grooves on a side of the filter layer away from the base substrate, the plurality of grooves including a first groove located in the first sub-pixel and a second groove located in the second sub-pixel, the first quantum dot structure being located in the first groove, and the second quantum dot structure being located in the second groove.

[0021] According to some exemplary embodiments, the color filter substrate further includes a black matrix, an isolation dam and a planarization layer, the black matrix is ​​located on a side of the filter layer close to the base substrate, the planarization layer is located on a side of the filter layer away from the base substrate, and the isolation dam is located on a side of the planarization layer away from the base substrate, so as to form a plurality of grooves on a side of the planarization layer away from the base substrate, the plurality of grooves include a first groove located in the first sub-pixel and a second groove located in the second sub-pixel, the first quantum dot structure is located in the first groove, and the second quantum dot structure is located in the second groove.

[0022] According to some exemplary embodiments, the isolation dam has a first isolation dam top surface away from the substrate, the first quantum dot structure has a first top surface away from the substrate, the second quantum dot structure has a second top surface away from the substrate, and the first isolation dam top surface is farther away from the substrate than each of the first top surface and the second top surface.

[0023] According to some exemplary embodiments, the color filter substrate further includes a barrier layer, wherein the barrier layer is located between the layer where the first quantum dot structure and the second quantum dot structure are located and the covering layer.

[0024] According to some exemplary embodiments, an orthographic projection of the isolation dam on the base substrate overlaps with an orthographic projection of the black matrix on the base substrate.

[0025] According to some exemplary embodiments, the first quantum dot structure has a first bottom surface close to the substrate and a first top surface away from the substrate, and the orthographic projection of the first bottom surface on the substrate falls within the orthographic projection of the first top surface on the substrate; and / or, the second quantum dot structure has a second bottom surface close to the substrate and a second top surface away from the substrate, and the orthographic projection of the second bottom surface on the substrate falls within the orthographic projection of the second top surface on the substrate.

[0026] According to some exemplary embodiments, a thickness of each of the first quantum dot structure and the second quantum dot structure is in a range of 5 to 15 μm.

[0027] According to some exemplary embodiments, the color filter substrate further includes an alignment layer, and the alignment layer is located on a side of the second protection sublayer away from the base substrate.

[0028] In another aspect, a display panel is provided, wherein the display panel includes the color film substrate described above.

[0029] According to some exemplary embodiments, the display panel further includes:

[0030] An array substrate disposed opposite to the color filter substrate;

[0031] A liquid crystal layer disposed between the color filter substrate and the array substrate; and

[0032] A backlight module is arranged on a side of the array substrate away from the liquid crystal layer, and the backlight module emits blue light.

[0033] In yet another aspect, a display device is provided, wherein the display device includes the above-mentioned display panel.

[0034] According to various aspects of the present disclosure, a color film substrate, a display panel, and a display device are provided, which are beneficial to improving at least one of the color gamut, light effect, and viewing angle of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Other objects and advantages of the present disclosure will be apparent from the following description of the present disclosure with reference to the accompanying drawings and will help to have a comprehensive understanding of the present disclosure.

[0036] Figure 1 is a plan view of a color film substrate according to an embodiment of the present disclosure;

[0037] Figure 2 According to an embodiment of the present disclosure, a color film substrate is provided along Figure 1 A schematic cross-sectional view taken along line AA' in FIG.

[0038] Figure 3 is a structural schematic diagram of a display panel according to an embodiment of the present disclosure;

[0039] Figure 4 is a structural schematic diagram of a color film substrate according to an embodiment of the present disclosure;

[0040] Figure 5 is a schematic structural diagram of a wire grid polarizer according to an embodiment of the present disclosure;

[0041] Figure 6 is a transmittance curve diagram of the wire grid polarizer assembly in the embodiment of the present disclosure and the comparative embodiment;

[0042] Figure 7 is a partial plan view of a color filter substrate according to an embodiment of the present disclosure;

[0043] Figure 8 The color film substrate according to the embodiment of the present disclosure is Figure 7 A cross-sectional view taken along line BB';

[0044] Fig. 9 is a structural schematic diagram of a display panel according to an embodiment of the present disclosure;

[0045] Fig.10 According to other embodiments of the present disclosure, the color film substrate is Figure 7 A cross-sectional view taken along line BB';

[0046] Fig.11 is a partial enlarged view of the isolation bank and the black matrix of the color filter substrate according to an embodiment of the present disclosure;

[0047] Fig.12 According to other embodiments of the present disclosure, the color film substrate is Figure 7 A cross-sectional view taken along line BB';

[0048] Fig.13 According to other embodiments of the present disclosure, the color film substrate is Figure 7 A cross-sectional view taken along line BB';

[0049] Fig.14 is a plan view of a display device according to an embodiment of the present disclosure;

[0050] Fig.15 is a flow chart of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure; and

[0051] Fig.16 is a flow chart of a method for manufacturing a color filter substrate according to other embodiments of the present disclosure.

[0052] It should be noted that, for the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the sizes of layers, structures or regions may be enlarged or reduced, that is, these drawings are not drawn according to the actual scale. DETAILED DESCRIPTION

[0053] The technical solution of the present disclosure is further specifically described below through examples and in conjunction with the accompanying drawings. In the specification, the same or similar figure numbers indicate the same or similar parts. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the overall inventive concept of the present disclosure and should not be construed as a limitation of the present disclosure.

[0054] In addition, in the following detailed description, for the purpose of explanation, numerous specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details.

[0055] It should be noted that the terms “on…”, “formed on…” and “disposed on…” mentioned herein may mean that one layer is directly formed or disposed on another layer, or may mean that one layer is indirectly formed or disposed on another layer, i.e., there are other layers between the two layers.

[0056] It should be noted that, although the terms "first", "second", etc. may be used herein to describe various parts, components, elements, regions, layers and / or parts, these parts, components, elements, regions, layers and / or parts should not be limited by these terms. Instead, these terms are used to distinguish one part, component, element, region, layer and / or part from another. Thus, for example, the first part, first member, first element, first region, first layer and / or first part discussed below may be referred to as the second part, second member, second element, second region, second layer and / or second part without departing from the teachings of the present disclosure.

[0057] It should be noted that, in this article, "thickness" refers to the dimension along the light emitting direction of the color filter substrate or display panel (i.e., the direction perpendicular to the surface of the base substrate of the color filter substrate on which the color conversion layer is disposed, i.e., the Y direction shown in the figure). "Width" refers to the dimension along the direction perpendicular to the light emitting direction of the color filter substrate or display panel (i.e., the direction parallel to the surface of the base substrate of the color filter substrate on which the color conversion layer is disposed) and parallel to the row direction of the pixel array on the color filter substrate or display panel (i.e., the X direction shown in the figure).

[0058] Figure 1 is a plan view of a color film substrate according to an embodiment of the present disclosure, Figure 2 According to an embodiment of the present disclosure, a color film substrate is provided along Figure 1 A schematic cross-sectional view taken along line AA' in FIG. Figure 1 and Figure 2The color filter substrate 10 of the embodiment of the present disclosure may include a base substrate 1, a color conversion layer 2, a cover layer 3, a buffer layer 4, a polarizing layer 5, and a protective layer 6. The color conversion layer 2, the cover layer 3, the buffer layer 4, the polarizing layer 5, and the protective layer 6 are sequentially arranged on the base substrate 1 in a direction away from the base substrate 1. That is, the color conversion layer 2 is arranged on the base substrate 1, the cover layer 3 is arranged on a side of the color conversion layer 2 away from the base substrate 1, the buffer layer 4 is arranged on a side of the cover layer 3 away from the base substrate 1, the polarizing layer 5 is arranged on a side of the buffer layer 4 away from the base substrate 1, and the protective layer 6 is arranged on a side of the polarizing layer 5 away from the base substrate 1.

[0059] Figure 3 is a schematic diagram of the structure of a display panel according to an embodiment of the present disclosure. Figure 2 According to the embodiment of the present disclosure, the display panel 100 may include a color filter substrate 10, an array substrate 20, a backlight module 30, and a liquid crystal layer 40 sandwiched between the color filter substrate 10 and the array substrate 20. It should be understood that the color filter substrate 10 is the color filter substrate according to any embodiment of the present disclosure.

[0060] In the embodiments of the present disclosure, the substrate 1 may be a rigid substrate or a flexible substrate, including but not limited to a glass substrate or a polyimide (PI) substrate.

[0061] In the embodiments of the present disclosure, Figure 1 and Figure 2 , the color filter substrate 10 may include a plurality of pixels PX, such as the area surrounded by the dotted line frame. It should be understood that the plurality of pixels PX may be arranged in an array, that is, including a plurality of rows and a plurality of columns. Figure 1 In FIG. 1 , only a part of the pixels of the color filter substrate 10 is schematically shown, rather than all the pixels. Figure 1 In the embodiment of the present invention, the horizontal direction may be referred to as the row direction, and the vertical direction may be referred to as the column direction. Each pixel PX may include a plurality of sub-pixels SPX for emitting a plurality of different colors, for example, different colors such as red, green, blue, and yellow may be emitted to achieve color display. For example, the color film substrate according to the embodiment of the present disclosure may include at least 3 sub-pixels SPX, for example, the 3 sub-pixels SPX may include a first sub-pixel 2R for emitting light having a first wavelength range, a second sub-pixel 2G for emitting light having a second wavelength range, and a third sub-pixel 2B for emitting light having a third wavelength range.

[0062] It should be noted that in Figure 1 In order to clearly show images such as dotted boxes and cross-section lines, the black matrix is ​​shown with a gray ground line; however, this is not to be regarded as a limitation to the embodiments of the present disclosure.

[0063] In this document, unless otherwise specified, the first wavelength range, the second wavelength range, and the third wavelength range are different from each other. For example, the first wavelength range, the second wavelength range, and the third wavelength range may correspond to a first color, a second color, and a third color, respectively. For another example, the first color, the second color, and the third color may refer to red, green, and blue, respectively. Of course, the color filter substrate may also include pixels for emitting other colors, such as pixels emitting yellow light, and the embodiments of the present disclosure do not impose any particular restrictions on them.

[0064] like Figure 1 As shown, the color conversion layer 2 may include at least a quantum dot structure. Specifically, the color conversion layer 2 may include a plurality of quantum dot structures for emitting different colors. For example, the first sub-pixel 2R may include a first quantum dot structure 221 for emitting light having a first wavelength range, and the second sub-pixel 2G may include a second quantum dot structure 222 for emitting light having a second wavelength range. Of course, the color conversion layer 2 may also include a quantum dot structure for emitting light having other wavelength ranges, such as a quantum dot structure for emitting yellow light.

[0065] In this article, the expression "quantum dot (QD)" is a semiconductor nanostructure that binds excitons in three spatial directions. Those skilled in the art should understand that quantum dots have the following characteristics: when excited by light of a predetermined wavelength, the quantum dot can convert the light of the predetermined wavelength into light of another predetermined wavelength, and the wavelength of the converted light of the other predetermined wavelength can be determined by factors such as the constituent material of the quantum dot, the shape of the quantum dot, and the size of the quantum dot.

[0066] For example, the first quantum dot structure 221 can be used to convert light with a third wavelength range (e.g., blue light) incident thereon into light with a first wavelength range (e.g., red light), and the second quantum dot structure 222 can be used to convert light with a third wavelength range (e.g., blue light) incident thereon into light with a second wavelength range (e.g., green light).

[0067] It should also be understood that, in this article, a quantum dot structure may include multiple quantum dots, for example, the first quantum dot structure 221 may include multiple first quantum dots 2211, each of which may be used to convert the third color light incident thereon into the first color light. The second quantum dot structure 222 may include multiple second quantum dots 2221, each of which may be used to convert the third color light incident thereon into the second color light.

[0068] For example, the material of the quantum dot can be selected from the commonly used quantum dot materials in the art, including but not limited to one or more selected from the following materials: CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, CuInSe, AlSb. Of course, the material of the quantum dot includes but is not limited to the several listed above, and other materials that are the same or similar to the above substances can also be applied. Those skilled in the art should also understand that the emission spectrum of the quantum dot can be controlled by changing the size of the quantum dot, that is, the quantum dot is formed into different sizes and can emit light of different colors. Taking zinc sulfide (ZnS) quantum dots as an example, the size of the quantum dot emitting red light is mainly about 9 to 10nm, the size of the quantum dot emitting yellow light is about 8nm, and the size of the quantum dot emitting green light is about 7nm.

[0069] In some exemplary embodiments of the present disclosure, in combination with reference Figure 2 and Figure 3 The third sub-pixel 2B may include a transparent structure 223 that allows light incident thereon to directly pass therethrough. For example, the transparent structure 223 of the third sub-pixel 2B may allow light having a third wavelength range (eg, blue light) incident thereon to directly pass therethrough.

[0070] In an embodiment of the present disclosure, the quantum dot structure may be formed by a photolithography process, and optionally, the thickness of the quantum dot structure may be in the range of 5 to 15 μm. For example, in an embodiment of the present disclosure, the thicknesses of the first quantum dot structure 221, the second quantum dot structure 222, and the transparent structure 223 may be equal to each other and fall within the range of 5 to 15 μm.

[0071] Combined with reference Figure 2 and Figure 3 The backlight module 30 may include a backlight source that emits light having a third wavelength range (eg, blue light), such as a blue light LED. For example, the backlight source of the backlight module 30 may emit blue light having a central wavelength of 450 nm and a half-peak width of 30-40 nm.

[0072] like Figure 3 As shown, the color filter substrate 10 is arranged on the light-emitting side of the backlight module 30. Figure 2 and Figure 3When the blue light LB emitted by the backlight module 30 is incident on the quantum dot structures 221, 222 and the transparent structure 223, the first quantum dot structure 221 can emit red light under the excitation of the blue light LB, that is, convert the blue light LB into red light LR; the second quantum dot structure 222 can emit green light under the excitation of the blue light LB, that is, convert the blue light LB into green light LG; the blue light LB directly transmits through the transparent structure 223. In this way, the first sub-pixel 2R emits red light, the second sub-pixel 2G emits green light, and the third sub-pixel 2B emits blue light, so that the display panel according to the embodiment of the present disclosure can achieve color display.

[0073] In the color filter substrate, display panel and display device of the embodiments of the present disclosure, the color conversion layer of the color filter substrate includes a quantum dot structure, which can utilize the advantages of quantum dots to realize a display panel and display device with a high color gamut and a large viewing angle.

[0074] Optionally, in the embodiment of the present disclosure, scattering particles 224 may be further provided in the first quantum dot structure 221, the second quantum dot structure 222 and / or the transparent structure 223 (see Figure 2 ) to improve the conversion efficiency of blue light, thereby improving the light efficiency of the display panel. Figure 2 In the illustrated embodiment, a plurality of scattering particles 224 are disposed in the first quantum dot structure 221, the second quantum dot structure 222, and the transparent structure 223. The scattering particles 224 can scatter blue light, effectively increasing the optical distance and path of blue light in the quantum dot structure and the transparent structure, and increasing the probability of blue light incident on each quantum dot, thereby increasing the light conversion rate of blue light into red light and green light, and more blue light is transmitted through the transparent structure 223. In this way, the overall light effect and viewing angle of the display panel are improved.

[0075] For example, the particle size of the scattering particles 224 may be in the range of 60 to 500 nm, and the distribution concentration of the scattering particles 224 may be in the range of 1% to 15%. The distribution concentration of the scattering particles 224 may be represented by the volume percentage of the scattering particles in the quantum dot structure or the transparent structure.

[0076] Continue to refer to Figure 2 The color filter substrate 10 may further include a filter layer 21, which is disposed between the base substrate 1 and the layer where the quantum dot structure and the transparent structure are located. The filter layer 21 may include a plurality of filter structures for allowing light of different colors to pass through. For example, the plurality of filter structures may be disposed in a one-to-one correspondence with the plurality of sub-pixels. Figure 1As shown, the filter layer 21 may include a first filter structure 211, a second filter structure 212, and a third filter structure 213. It should be understood that the first sub-pixel 2R includes the first filter structure 211, the second sub-pixel 2G includes the second filter structure 212, and the third sub-pixel 2B includes the third filter structure 213. The first filter structure 211 is used to allow light of the first color to pass through, the second filter structure 212 is used to allow light of the second color to pass through, and the third filter structure 213 is used to allow light of the third color to pass through.

[0077] Specifically, the first filter structure 211 is arranged corresponding to the first quantum dot structure 221, that is, the first sub-pixel 2R includes the first filter structure 211 and the first quantum dot structure 221, and the orthographic projection of the first quantum dot structure 221 on the substrate 1 falls within the orthographic projection of the first filter structure 211 on the substrate 1. For example, the area of ​​the orthographic projection of the first quantum dot structure 221 on the substrate 1 is smaller than the area of ​​the orthographic projection of the first filter structure 211 on the substrate 1. Figure 2 As shown, the thickness of the first filter structure 211 may be smaller than the thickness of the first quantum dot structure 221 . For example, the thickness of the first filter structure 211 may be in the range of 1.5 to 3.0 μm, and the thickness of the first quantum dot structure 221 may be in the range of 5 to 15 μm.

[0078] The second filter structure 212 is arranged correspondingly to the second quantum dot structure 222, that is, the second sub-pixel 2G includes the second filter structure 212 and the second quantum dot structure 222, and the orthographic projection of the second quantum dot structure 222 on the substrate 1 falls within the orthographic projection of the second filter structure 212 on the substrate 1. For example, the orthographic projection area of ​​the second quantum dot structure 222 on the substrate 1 is smaller than the orthographic projection area of ​​the second filter structure 212 on the substrate 1. Figure 2 As shown, the thickness of the second filter structure 212 may be smaller than the thickness of the second quantum dot structure 222. For example, the thickness of the second filter structure 212 may be in the range of 1.5 to 3.0 μm, and the thickness of the second quantum dot structure 222 may be in the range of 5 to 15 μm.

[0079] The third filter structure 213 is arranged corresponding to the transparent structure 223, that is, the third sub-pixel 2B includes the third filter structure 213 and the transparent structure 223, and the orthographic projection of the transparent structure 223 on the substrate 1 falls within the orthographic projection of the third filter structure 213 on the substrate 1. For example, the orthographic projection area of ​​the transparent structure 223 on the substrate 1 is smaller than the orthographic projection area of ​​the third filter structure 213 on the substrate 1. Figure 2As shown, the thickness of the third filter structure 213 may be smaller than the thickness of the transparent structure 223 . For example, the thickness of the third filter structure 213 may be in the range of 1.5 to 3.0 μm, and the thickness of the transparent structure 223 may be in the range of 5 to 15 μm.

[0080] like Figure 2 As shown, the filter layer 21 can be arranged between the substrate 1 and the layer where the quantum dot structure and the transparent structure are located, that is, the filter layer 21 can be arranged on the light-emitting side of the quantum dot structure and the transparent structure. As described above, the first quantum dot structure 221 and the second quantum dot structure 223 can convert blue light into red light and green light respectively. In addition, there is part of the blue light that has not been converted by the first quantum dot structure 221 and the second quantum dot structure 223. By setting the filter layer 21, this part of the blue light can be absorbed, avoiding the mixing of blue light in the red light emitted from the first sub-pixel and the green light emitted from the second sub-pixel, thereby further improving the color gamut of the display panel. Furthermore, the filter layer 21 can also absorb external light to avoid poor display caused by external light exciting the quantum dot structure.

[0081] In the embodiment of the present disclosure, the thicknesses of the first filter structure 211, the second filter structure 212 and the third filter structure 213 are equal to each other and can be set in the range of 1.5-3.0 μm. With such a setting, the filter layer can meet the requirements of sRGB 100% color gamut.

[0082] As described above, the thicknesses of the first quantum dot structure 221, the second quantum dot structure 222 and the transparent structure 223 may be equal to each other, and the thickness of the first light filter structure 211 is less than the thickness of the first quantum dot structure 221, the thickness of the second light filter structure 212 is less than the thickness of the second quantum dot structure 222, and the thickness of the third light filter structure 213 is less than the thickness of the transparent structure 223. In the actual manufacturing process, the same mask plate may be used to manufacture the corresponding light filter structure and the quantum dot structure. Since the light filter structure and the quantum dot structure are made of different materials and the thickness of the quantum dot structure is relatively large, incomplete curing may occur when manufacturing the quantum dot structure, resulting in the part of the material of the quantum dot structure close to the substrate 1 being easily peeled off. Therefore, the light filter structure and the quantum dot structure actually manufactured have different cross-sectional shapes.

[0083] like Figure 2 As shown, the first filter structure 211 may have a trapezoidal structure. Specifically, it has a cross section perpendicular to the light emitting direction (ie, the Y direction in the figure), and the area of ​​the cross section of the first filter structure 211 gradually decreases in a direction away from the substrate 1.

[0084] Continue to refer to Figure 2, the first quantum dot structure 221 has a first bottom surface 221A close to the substrate 1 and a first top surface 221B away from the substrate 1, the orthographic projection of the first bottom surface 221A of the first quantum dot structure 221 on the substrate 1 falls within the orthographic projection of the first top surface 221B of the first quantum dot structure 221 on the substrate 1, and the area of ​​the first bottom surface 221A of the first quantum dot structure 221 is smaller than the area of ​​the first top surface 221B of the first quantum dot structure 221. In this way, the orthographic projection of the first quantum dot structure 221 on the substrate 1 falls within the orthographic projection of the first filter structure 211 on the substrate 1, and the area of ​​the orthographic projection of the first quantum dot structure 221 on the substrate 1 is smaller than the area of ​​the orthographic projection of the first filter structure 211 on the substrate 1.

[0085] Similarly, the second quantum dot structure 222 has a second bottom surface 222A close to the base substrate 1 and a second top surface 222B away from the base substrate 1, the orthographic projection of the second bottom surface 222A of the second quantum dot structure 222 on the base substrate 1 falls within the orthographic projection of the second top surface 222B of the second quantum dot structure 222 on the base substrate 1, and the area of ​​the second bottom surface 222A of the second quantum dot structure 222 is smaller than the area of ​​the second top surface 222B of the second quantum dot structure 222. In this way, the orthographic projection of the second quantum dot structure 222 on the base substrate 1 falls within the orthographic projection of the second filter structure 212 on the base substrate 1, and the area of ​​the orthographic projection of the second quantum dot structure 222 on the base substrate 1 is smaller than the area of ​​the orthographic projection of the second filter structure 212 on the base substrate 1.

[0086] Optionally, refer to Figure 2 The color filter substrate 10 may further include a black matrix 8. It should be understood that the black matrix 8 may separate pixels and prevent light leakage and color crosstalk.

[0087] It should be understood that the arrangement of the black matrix 8 may refer to the arrangement of the black matrix in a conventional color filter substrate, and will not be described in detail here.

[0088] Figure 4 Schematic diagram of the structure of a color filter substrate according to an embodiment of the present disclosure. Figure 4 The embodiment shown is different from the above-mentioned embodiment in that Figure 4 For other structures in the illustrated embodiment, reference may be made to the above description.

[0089] Reference Figure 4 The first sub-pixel 2R includes a first light filtering structure 211 and a first quantum dot structure 221 , the second sub-pixel 2G includes a second light filtering structure 212 and a second quantum dot structure 222 , and the third sub-pixel 2B includes a third light filtering structure 213 ′.

[0090] The thickness of the first filter structure 211 may be equal to the thickness of the second filter structure 212, for example, in the range of 1.5 to 3.0 μm. The thickness of the first quantum dot structure 221 may be equal to the thickness of the second quantum dot structure 222, for example, in the range of 5 to 15 μm. The thickness of the third filter structure 213' may be equal to the sum of the thicknesses of the first filter structure 211 and the first quantum dot structure 221.

[0091] That is, in this embodiment, in the third sub-pixel 2B, an integral third filter structure 213' is provided instead of a filter structure + transparent structure. In this way, the third filter structure 213' allows light of a third color (eg, blue light) to pass through.

[0092] It should be understood that the third filter structure 213' may also be doped with the above-mentioned scattering particles 224. For example, the particle size of the scattering particles 224 may be in the range of 60 to 500 nm, and the distribution concentration of the scattering particles 224 may be in the range of 1% to 15%. The distribution concentration of the scattering particles 224 may be represented by the volume percentage of the scattering particles in the quantum dot structure or the transparent structure.

[0093] Reference Figure 2-Figure 4 , there is a gap 8G between two adjacent sub-pixels. That is, the first filter structure 211 and the first quantum dot structure 221 of the first sub-pixel 2R are spaced from the second filter structure 212 and the second quantum dot structure 222 of the second sub-pixel 2G, and the second filter structure 212 and the second quantum dot structure 222 of the second sub-pixel 2G are spaced from the third filter structure 213 and the transparent structure 223 of the third sub-pixel 2B. Due to the existence of the gap 8G, there is a step difference between adjacent sub-pixels. For example, the step difference can be in the range of 5 to 15 μm.

[0094] Reference Figure 2 , the cover layer 3 may include a first cover sublayer 31 and a second cover sublayer 32. The first cover sublayer 31 is disposed on the surface of the layer where the quantum dot structure and the transparent structure are located away from the base substrate 1, and the first cover sublayer 31 fills the gap 8G. The second cover sublayer 32 is disposed on the surface of the first cover sublayer 31 away from the base substrate 1. By providing the cover layer, the step difference can be filled to form a flattened surface.

[0095] In an embodiment of the present disclosure, the material of the first cover sub-layer 31 may be different from the material of the second cover sub-layer 32 .

[0096] The first covering sublayer 31 may be a heat-curing covering layer. That is, the first covering sublayer 31 may achieve material curing by heating, for example, the curing temperature may be around 150°C. Exemplarily, the main components of the material of the heat-curing covering layer may include silicone resin, acrylic resin, isopropyl alcohol, hardener, silicon dioxide, etc. The thickness of the first covering sublayer 31 may be in the range of 3 to 7 μm. The inventors have found through research that there are large step differences between each sub-pixel, and by providing the first covering sublayer 31, the step differences can be filled to a certain extent. Reference Figure 2 Although the surface of the first covering sublayer 31 away from the base substrate 1 is still uneven, the depth of the recess 31R (corresponding to the gap 8G) in the surface is much smaller than the step difference, that is, the larger step difference at the gap 8G is filled to a certain extent.

[0097] The second covering sublayer 32 may be a photocurable covering layer, for example, an ultraviolet light-curable covering layer. Exemplarily, the main components of the material of the photocurable covering layer may include acrylic resin, isopropyl alcohol, a hardener, silicon dioxide, and a photoinitiator, etc. The thickness of the second covering sublayer 32 may be in the range of 2 to 3 μm. In an embodiment of the present disclosure, the leveling property of the material of the second covering sublayer 32 is greater than the leveling property of the material of the first covering sublayer 31. The second covering sublayer 32 may be used in conjunction with a nanoimprinting process. The second covering sublayer 32 may further fill the above-mentioned step difference. For example, the second covering sublayer 32 may be flattened by a nanoimprinting device and then cured by ultraviolet light so that the size of the step difference meets the requirements of the NIL process (i.e., nanoimprinting process). For example, after the first covering sublayer 31 and the second covering sublayer 32 are flattened, the step difference may be reduced to tens of nanometers, that is, the step difference is less than or equal to 100 nanometers.

[0098] It should be noted that, in this article, the expression "leveling property" refers to the property of the covering material to flow evenly without pores on the surface of the material to be covered. For example, it can be expressed by the time required for the coated covering material to reach a uniform surface.

[0099] In the embodiment of the present disclosure, by providing two covering sub-layers 31 and 32 made of different materials, the above-mentioned large step difference can be basically filled, for example, the step difference can be reduced to tens of nanometers, which is beneficial to the formation of subsequent film layers.

[0100] In the embodiment of the present disclosure, the thickness of the first cover sublayer 31 is greater than or equal to the thickness of the second cover sublayer 32. Exemplarily, the thickness of the first cover sublayer 31 may be 1 to 4 times the thickness of the second cover sublayer 32. For example, the thickness of the first cover sublayer 31 may be 2 times the thickness of the second cover sublayer 32. Through such thickness matching, the step difference can be well filled, so that the surface of the cover layer away from the base substrate is relatively flat.

[0101] Reference Figure 2 , the polarizing layer 5 is arranged on the side of the quantum dot structure 221, 222 away from the base substrate 1, that is, the polarizing layer 5 is located on the light incident side of the quantum dot structure 221, 222. Since the quantum dot structure 221, 222 has a depolarization function, if the upper polarizer is arranged on the light emitting side of the quantum dot structure 221, 222, the grayscale cannot be adjusted. In the embodiment of the present disclosure, by arranging the polarizing layer 5 on the light incident side of the quantum dot structure 221, 222, the grayscale display of the display panel can be achieved.

[0102] In the embodiment of the present disclosure, the polarization layer 5 may be a wire grid polarizer. Compared with conventional polarizers, the wire grid polarizer 5 may increase the transmittance of backlight such as blue light, thereby further improving the light effect.

[0103] Further references Figure 2 The buffer layer 4 and the protective layer 6 are respectively located on the upper and lower sides of the wire grid polarizer 5, that is, the buffer layer 4 is arranged on the side of the wire grid polarizer 5 close to the substrate 1, and the protective layer 6 is arranged on the side of the wire grid polarizer 5 away from the substrate 1.

[0104] Figure 5 is a schematic diagram of the structure of a wire grid polarizer according to an embodiment of the present disclosure. Figure 2 and Figure 5 The wire grid polarizer 5 may include a plurality of light shielding elements 51 arranged at intervals and a gap 52 between two adjacent light shielding elements 51. For example, the light shielding elements 51 may be made of a metal material such as aluminum or silver.

[0105] In the wire grid polarizer 5, a plurality of light shielding elements 51 and a plurality of gaps 52 are arranged alternately. Figure 1-3, the wire grid polarizer 5 has a pitch or period (pitch) P, a shading element 51 has a dimension (i.e., width in the figure) W1 along a direction perpendicular to the light emitting direction (i.e., X direction in the figure) and a dimension (i.e., thickness in the figure) H1 along the light emitting direction (i.e., Y direction in the figure), and a gap 52 has a dimension (i.e., width in the figure) W2 along a direction perpendicular to the light emitting direction and a dimension (i.e., thickness in the figure) H2 along the light emitting direction. A shading element 51 and a gap 52 constitute a unit, and a plurality of units are periodically arranged along a direction perpendicular to the light emitting direction. The dimension of a unit constituted by a shading element 51 and a gap 52 along the X direction in the figure is the pitch P. It should be understood that the pitch P is equal to the sum of the width W1 of the shading element 51 and the width W2 of the gap 52. In addition, the ratio of the width W1 of the shading element 51 to the pitch P is called the duty cycle. Optionally, the thickness H1 of the shading element 51 is equal to the thickness H2 of the gap 52 , and the size of the wire grid polarizer 5 along the light emitting direction (ie, the thickness in the figure) can be represented by the thickness H1 of the shading element 51 .

[0106] In an embodiment of the present disclosure, the shading elements 51 are relatively long and thin. For example, the shading elements 51 are arranged in a substantially parallel manner, and the pitch or period P is smaller than the wavelength of light incident on the wire grid polarizer.

[0107] It should be understood that the pitch or period P, duty cycle and thickness of the wire grid polarizer 5 have a great influence on the performance of the wire grid polarizer, including the polarization degree, transmittance and wavelength of light to which it is applied.

[0108] Through a large number of experiments, the inventors studied the effects of the pitch or period P, duty cycle and thickness of the wire grid polarizer 5 on the polarization degree and transmittance of blue light. Some experimental data are shown in Tables 1 to 3 below.

[0109] Table 1 Effect of pitch P on polarization and transmittance of blue light

[0110] Pitch P / nm Polarization Transmittance 40 99.9999％ 43.7720％ 50 99.9999％ 43.4653％ 80 99.9990％ 42.0039％ 100 99.9943％ 40.6417％ 120 99.9957％ 40.2171％ 140 99.9742％ 40.2013％ 150 99.9772％ 39.0102％ 200 99.3520％ 36.1003％ 250 92.0875％ 30.5608％ 300 88.5012％ 27.3971％

[0111] Table 2 Effect of duty cycle on polarization and transmittance of blue light

[0112] Duty Cycle Polarization Transmittance 0.3 99.9324％ 47.2553％ 0.4 99.9949％ 43.8460％ 0.5 99.9943％ 40.6417％ 0.6 99.9997％ 36.9792％ 0.7 99.9999％ 26.4238％ 0.8 99.9999％ 17.8956％

[0113] Table 3 Effect of thickness on polarization and transmittance of blue light

[0114] Thickness / nm Polarization Transmittance 30 70.3771％ 47.6661％ 50 94.0952％ 40.5349％ 80 99.4075％ 40.8691％ 100 99.8314％ 40.9579％ 110 99.9315％ 41.6503％ 130 99.9833％ 41.5477％ 150 99.9943％ 40.6417％ 200 99.9999％ 38.9699％ 250 99.9999％ 37.6231％ 300 99.9999％ 36.2047％

[0115] It can be seen from Table 1 above that, as the pitch P increases, basically, the polarization degree of the wire grid polarizer 5 for blue light decreases, and its transmittance to blue light also decreases. It can be seen from Table 2 above that, as the duty cycle increases, basically, the polarization degree of the wire grid polarizer 5 for blue light increases, and its transmittance to blue light decreases. It can be seen from Table 3 above that, as the thickness increases, basically, the polarization degree of the wire grid polarizer 5 for blue light increases, and its transmittance to blue light decreases.

[0116] In order to make the wire grid polarizer have a larger polarization degree and transmittance for the incident light (such as blue light), while taking into account the difficulty of processing the wire grid polarizer, in the embodiment of the present disclosure, the pitch P can be set in the range of 100 to 140nm, because when the pitch P is less than 100nm, although a larger polarization degree and transmittance can be obtained, the processing difficulty of the wire grid polarizer is greater at this time; when the pitch P is greater than 140nm, the polarization degree and transmittance of the wire grid polarizer are small. Furthermore, the duty cycle can be around 0.5 to obtain better polarization and transmittance at the same time. In addition, the thickness can be in the range of 150 to 200nm to obtain better polarization and transmittance at the same time.

[0117] Reference Figure 2 , the buffer layer 4 may include a first buffer sublayer 41 and a second buffer sublayer 42. The first buffer sublayer 41 is closer to the wire grid polarizer 5 than the second buffer sublayer 42. In the process of forming the wire grid polarizer 5, a metal layer such as aluminum is usually etched by a dry etching process. The buffer layer 4 is disposed between the cover layer 3 and the wire grid polarizer 5 to prevent the dry etching process from damaging the cover layer 3, that is, the buffer layer 4 can act as an etching barrier.

[0118] Further, the first buffer sublayer 41 may be composed of a low refractive index material, for example, the first buffer sublayer 41 may be a silicon oxide layer. The second buffer sublayer 42 may be composed of a high refractive index material, for example, the second buffer sublayer 42 may be a silicon nitride layer. It should be understood that the low refractive index and high refractive index here are relative concepts, which are intended to express that the refractive index of the material of the first buffer sublayer 41 is less than the refractive index of the material of the second buffer sublayer 42. For example, the refractive index of the material of the first buffer sublayer 41 may be in the range of 1.48 to 1.52, and the refractive index of the material of the second buffer sublayer 42 may be around 1.8. By such an arrangement, a gradually changing refractive index is formed on the light-emitting side of the wire grid polarizer 5, which can further improve the light efficiency of the display panel. In addition, the second buffer sublayer 42 is composed of silicon nitride, and silicon nitride can act as an etching stopper, so that the formed buffer layer can act as an etching stopper.

[0119] Continue to refer to Figure 2, the protective layer 6 may include a first protective sublayer 61 and a second protective sublayer 62. The first protective sublayer 61 is closer to the wire grid polarizer 5 than the second protective sublayer 62. By providing the protective layer 6 on the side of the wire grid polarizer 5 away from the substrate 1, the wire grid polarizer can be protected. In addition, the protective layer 6 can also play a role in planarization.

[0120] Furthermore, the first protective sublayer 61 may be composed of a low refractive index material, for example, the first protective sublayer 61 may be a silicon oxide layer. The second protective sublayer 62 may be composed of a high refractive index material, for example, the second protective sublayer 62 may be a silicon nitride layer. It should be understood that the low refractive index and high refractive index here are relative concepts, which are intended to express that the refractive index of the material of the first protective sublayer 61 is less than the refractive index of the material of the second protective sublayer 62. For example, the refractive index of the material of the first protective sublayer 61 may be in the range of 1.48 to 1.52, and the refractive index of the material of the second protective sublayer 62 may be around 1.8. Through such a setting, a gradually changing refractive index is also formed on the light incident side of the wire grid polarizer 5, which can further improve the light efficiency of the display panel.

[0121] That is to say, in the embodiment of the present disclosure, the buffer layer 4, the wire grid polarizer 5 and the protective layer 6 together constitute a wire grid polarizer assembly. By designing the thickness and refractive index of each film layer in the wire grid polarizer assembly, the transmittance of the wire grid polarizer assembly to blue light can be improved.

[0122] For example, in the embodiment of the present disclosure, the central value of the thickness of the first buffer sublayer 41 can be 290nm. Limited by the actual processing technology, the actual thickness value can fluctuate within the range of 5% above and below 290nm, that is, the thickness of the first buffer sublayer 41 can be in the range of 275.5 to 304.5nm; the central value of the thickness of the second buffer sublayer 42 can be 100nm. Limited by the actual processing technology, the actual thickness value can fluctuate within the range of 5% above and below 100nm, that is, the thickness of the second buffer sublayer 42 can be in the range of 95 to 105nm. m; the central value of the thickness of the first protective sublayer 61 may be 450nm. Limited by the actual processing technology, the actual thickness value may fluctuate within the range of 5% above and below 450nm, that is, the thickness of the first protective sublayer 61 may be in the range of 427.5 to 472.5nm; the central value of the thickness of the second protective sublayer 62 may be 50nm. Limited by the actual processing technology, the actual thickness value may fluctuate within the range of 5% above and below 50nm, that is, the thickness of the second protective sublayer 62 may be in the range of 47.5 to 52.5nm.

[0123] Furthermore, the first buffer sublayer 41 and the first protective sublayer 61 can both be silicon oxide layers, whose refractive index can be in the range of 1.35 to 1.65, for example, 1.44; the second buffer sublayer 42 and the second protective sublayer 62 can both be silicon nitride layers, whose refractive index can be in the range of 1.6 to 2.0, for example, 1.8.

[0124] In addition, the inventors also designed a group of comparative examples, the specific parameters of which can be seen in Table 4 below.

[0125] Table 4 Relationship between the thickness and refractive index of each film layer in the wire grid polarizer assembly and the transmittance

[0126]

[0127] Figure 6 is a transmittance curve diagram of the wire grid polarizer assembly in the embodiment of the present disclosure and the comparative embodiment. By comparing the embodiment of the present disclosure and the comparative embodiment listed in Table 4 and the reference Figure 6 It can be concluded that by designing the thickness and refractive index of each film layer in the wire grid polarizer assembly to the above-mentioned value or value range, the transmittance of the wire grid polarizer assembly to blue light (within the wavelength range of about 435 to 480 nm) can be increased from 61% to 80%, thereby achieving the purpose of further improving the light efficiency of the display panel.

[0128] Optionally, the color filter substrate 10 may further include an alignment layer 7 disposed on a side of the protective layer 6 away from the base substrate 1. For example, the alignment layer 7 may be made of polyimide (PI). In the embodiment of the present disclosure, a second protective sublayer 62 made of silicon nitride is provided. Since the bonding force between silicon nitride and PI is relatively large, the adhesion between the alignment layer 7 and the protective layer 6 can be increased, which is beneficial to the coating of the alignment layer.

[0129] Figure 7 is a partial plan view of a color film substrate according to an embodiment of the present disclosure, Figure 8 The color film substrate according to the embodiment of the present disclosure is Figure 7 The cross-sectional view taken along line BB' in Fig. 9 Schematic diagram of a display panel according to an embodiment of the present disclosure. Figure 7-Figure 9 The embodiment shown is different from the above-mentioned embodiment in that Figure 7-Figure 9 For other structures in the illustrated embodiment, reference may be made to the above description.

[0130] It should be noted that in Figure 7In the plan view shown, in order to clearly show the black matrix and the isolation dam, the isolation dam 9 is schematically shown to leak out a part of the black matrix 8, but this does not mean that the isolation dam 9 must leak out a part of the black matrix 8; and, the black matrix 8 is shown using a gray fill color, but this does not mean that the black matrix 8 must be gray.

[0131] Combined with reference Figure 7-Figure 9 The color filter substrate 10 of the embodiment of the present disclosure may include a base substrate 1, a color conversion layer 2, a cover layer 3, a buffer layer 4, a polarization layer 5, a protective layer 6, an alignment layer 7, an isolation bank 9 and a barrier layer 11. The color conversion layer 2, the barrier layer 11, the cover layer 3, the buffer layer 4, the polarization layer 5, the protective layer 6 and the alignment layer 7 are sequentially arranged on the base substrate 1 in a direction away from the base substrate 1. That is, the color conversion layer 2 is arranged on the base substrate 1, the barrier layer 11 is arranged on a side of the color conversion layer 2 away from the base substrate 1, the cover layer 3 is arranged on a side of the barrier layer 11 away from the base substrate 1, the buffer layer 4 is arranged on a side of the cover layer 3 away from the base substrate 1, the polarization layer 5 is arranged on a side of the buffer layer 4 away from the base substrate 1, the protective layer 6 is arranged on a side of the polarization layer 5 away from the base substrate 1, and the alignment layer 7 is arranged on a side of the protective layer 6 away from the base substrate 1.

[0132] like Figure 7 and Figure 8 As shown, a plurality of isolation dams 9 are disposed on the base substrate 1 to form a plurality of grooves 91 on the base substrate 1 .

[0133] For example, the color filter substrate 10 may further include a black matrix 8. It should be understood that the black matrix 8 may play a role in separating pixels, preventing light leakage and color crosstalk. The isolation dam 9 may be disposed on a side of the black matrix 8 away from the base substrate 1. The orthographic projection of the isolation dam 9 on the base substrate 1 overlaps with the orthographic projection of the black matrix 8 on the base substrate 1. Exemplarily, the orthographic projection of the isolation dam 9 on the base substrate 1 may substantially coincide with the orthographic projection of the black matrix 8 on the base substrate 1.

[0134] For example, the material of the isolation dam 9 may be a transparent material. Optionally, the material of the isolation dam 9 may be a black material, which has good light absorption and can effectively reduce color mixing between multiple pixels. Optionally, the material of the isolation dam 9 may be a gray reflective material. For example, in the case where the material of the isolation dam 9 is a transparent material or a gray reflective material, high-refractive-index scattering particles such as titanium oxide may be added to the material of the isolation dam 9. For example, the particle size of the scattering particles may be in the range of 60 to 500 nm, and the distribution concentration of the scattering particles may be in the range of 1% to 15%. Among them, the distribution concentration of the scattering particles may be represented by the volume percentage of the scattering particles in the isolation dam. In this way, light reflection can be formed on the interface of the isolation dam 9, thereby improving the light effect and effectively reducing color mixing between multiple sub-pixels.

[0135] Specifically, continue to refer to Figure 8 The color filter substrate 10 may include a first sub-pixel 2R, a second sub-pixel 2G, and a third sub-pixel 2B. The color filter substrate 10 may also include a filter layer 21, which is disposed between the base substrate 1 and the layer where the quantum dot structure and the transparent structure are located. The filter layer 21 may include a plurality of filter structures for allowing light of different colors to pass through. For example, the plurality of filter structures may be disposed in a one-to-one correspondence with the plurality of sub-pixels. Figure 8 As shown, the filter layer 21 may include a first filter structure 211 , a second filter structure 212 and a third filter structure 213 .

[0136] The isolation dam 9 forms a plurality of grooves 91 on the side of the filter layer 21 away from the base substrate 1. For example, the plurality of grooves 91 may include a first groove 91R, a second groove 91G, and a third groove 91B. The first quantum dot structure 221 is located in the first groove 91R, the second quantum dot structure 222 is located in the second groove 91G, and the transparent structure 223 is located in the third groove 91B. That is, the first sub-pixel 2R may include the first quantum dot structure 221 located in the first groove 91R, and the second sub-pixel 2G may include the second quantum dot structure 222 located in the second groove 91G. The third sub-pixel 2B may include a transparent structure 223 located in the third groove 91B.

[0137] In the embodiments of the present disclosure, by setting the isolation bank, the color conversion layer, in particular the quantum dot structure, can be formed by a printing process (ie, Ink process).

[0138] Fig.11 FIG. 1 is a partial enlarged view of the isolation bank and the black matrix of the color filter substrate according to the embodiment of the present disclosure. In an exemplary embodiment, an isolation bank 9 may have a "mushroom-shaped" shape, referring to FIG. Fig.11The isolation bank 9 may include a neck portion 91A and a main body portion 91B. For example, the cross section of the main body portion 91B in the XY plane may be trapezoidal, that is, the main body portion 91B has a maximum width Dmax, such as Fig.11 As shown. The width of the neck 91A is smaller than the maximum width Dmax of the main body 91B. Fig.11 As shown, the portion of the black matrix 8 located between two sub-pixels may have a width Dbm. Optionally, the maximum width Dmax of the main body 91B is substantially equal to the width Dbm of the portion of the black matrix 8 located between two sub-pixels.

[0139] Optionally, in Fig.10 In the illustrated embodiment, one isolation bank 9 may have a columnar shape, for example, the isolation bank 9 extends with equal width along the Y direction. Also, the width of one isolation bank 9 may be equal to the width of the portion of the black matrix 8 located between two sub-pixels.

[0140] In the embodiment of the present disclosure, the thickness of the isolation bank 9 can be greater than the sum of the thicknesses of the color conversion layer 2 and the filter layer 21. In this way, the depth of the formed groove 91 can be greater than the thickness of the color conversion layer 2, which is conducive to forming the color conversion layer by printing process.

[0141] For example, the thickness of the filter layer 21 may be in the range of 2.1 to 3.0 μm, the thickness of the color conversion layer 2 may be in the range of 5 to 10 μm, and therefore, the thickness of the isolation bank 9 may be in the range of 7.1 to 13 μm.

[0142] like Figure 8 As shown, the isolation dam 9 has a first isolation dam top surface 9T away from the substrate substrate 1, the first quantum dot structure 221 has a first top surface 221A away from the substrate substrate 1, the second quantum dot structure 222 has a second top surface 222A away from the substrate substrate 1, and the first isolation dam top surface 9T is farther away from the substrate substrate 1 than each of the first top surface 221A and the second top surface 222A.

[0143] Reference Figure 8 The barrier layer 11 is disposed between the color conversion layer 2 and the cover layer 3, specifically, between the layer where the quantum dot structures 221, 222 and the transparent structure 223 are located and the first cover sublayer 31. The barrier layer 11 can protect the quantum dot structure (including QD Ink) formed by the printing process from being corroded by water, oxygen, etc., that is, it can play a role in blocking water and oxygen. For example, the barrier layer 11 can be a silicon oxide layer with a thickness in the range of 300 to 400 nm, and its water and oxygen blocking capacity can be less than 10 -5 In addition, since the barrier layer 11 is made of a low refractive index material such as silicon oxide, it can further improve the light efficiency of the display panel.

[0144] It should be noted that in the above Figure 1 to Figure 4 In the embodiment shown, the quantum dot layer is formed by photolithography, and the formed quantum dot layer has better protection for the quantum dots, and such a barrier layer may not be provided. Figure 1 to Figure 4 In the illustrated embodiment, such a barrier layer is added.

[0145] Fig.12 Schematic diagram of the structure of a color filter substrate according to an embodiment of the present disclosure. Fig.12 The embodiment shown is different from the above-mentioned embodiment in that Fig.12 For other structures in the illustrated embodiment, reference may be made to the above description.

[0146] Reference Fig.12 The first sub-pixel 2R includes a first light filtering structure 211 and a first quantum dot structure 221 , the second sub-pixel 2G includes a second light filtering structure 212 and a second quantum dot structure 222 , and the third sub-pixel 2B includes a third light filtering structure 213 ′.

[0147] The thickness of the first filter structure 211 may be equal to the thickness of the second filter structure 212. The thickness of the first quantum dot structure 221 may be equal to the thickness of the second quantum dot structure 222. The thickness of the third filter structure 213' may be equal to the sum of the thicknesses of the first filter structure 211 and the first quantum dot structure 221.

[0148] That is, in this embodiment, in the third sub-pixel 2B, an integral third filter structure 213' is provided instead of a filter structure + transparent structure. In this way, the third filter structure 213' allows light of a third color (eg, blue light) to pass through.

[0149] Reference Figure 7-Figure 12 There is a thickness difference between the isolation dam and the quantum dot structure, between the isolation dam and the transparent structure, or between the isolation dam and the third filter structure 213', that is, there is a step difference, for example, the step difference can be in the range of 5 to 15 μm. The step difference causes the barrier layer 11 to form an uneven surface away from the surface of the substrate 1.

[0150] Reference Figure 8-12, the covering layer 3 may include a first covering sublayer 31 and a second covering sublayer 32. The first covering sublayer 31 is arranged on the surface of the barrier layer 11 away from the base substrate 1, and the second covering sublayer 32 is arranged on the surface of the first covering sublayer 31 away from the base substrate 1. By setting the covering layer, the step difference can be filled to form a flattened surface. For example, the thickness of the first covering sublayer 31 is greater than or equal to the thickness of the second covering sublayer 32. Exemplarily, the thickness of the first covering sublayer 31 may be 1 to 4 times the thickness of the second covering sublayer 32, for example, the thickness of the first covering sublayer 31 may be 2 times the thickness of the second covering sublayer 32. Through such thickness matching, the step difference can be better filled, so that the surface of the covering layer away from the base substrate is flatter.

[0151] It should be noted that the first covering sublayer 31 and the second covering sublayer 32 may refer to the above description and will not be described in detail herein.

[0152] Fig.13 Schematic diagram of the structure of a color filter substrate according to an embodiment of the present disclosure. Fig.13 The embodiment shown is different from the above-mentioned embodiment in that Fig.13 For other structures in the illustrated embodiment, reference may be made to the above description.

[0153] Reference Fig.13 The color filter substrate 10 of the embodiment of the present disclosure may include a base substrate 1, a filter layer 21, a planarization layer 12, a color conversion layer 2, a cover layer 3, a buffer layer 4, a polarization layer 5, a protection layer 6, an alignment layer 7, an isolation bank 9 and a barrier layer 11. The filter layer 21, the planarization layer 12, the color conversion layer 2, the barrier layer 11, the cover layer 3, the buffer layer 4, the polarization layer 5, the protection layer 6 and the alignment layer 7 are sequentially arranged on the base substrate 1 in a direction away from the base substrate 1. That is, the filter layer 21 is arranged on the base substrate 1, the planarization layer 12 is arranged on the side of the filter layer 21 away from the base substrate 1, the color conversion layer 2 is arranged on the side of the planarization layer 12 away from the base substrate 1, the barrier layer 11 is arranged on the side of the color conversion layer 2 away from the base substrate 1, the covering layer 3 is arranged on the side of the barrier layer 11 away from the base substrate 1, the buffer layer 4 is arranged on the side of the covering layer 3 away from the base substrate 1, the polarization layer 5 is arranged on the side of the buffer layer 4 away from the base substrate 1, the protective layer 6 is arranged on the side of the polarization layer 5 away from the base substrate 1, and the orientation layer 7 is arranged on the side of the protective layer 6 away from the base substrate 1.

[0154] like Fig.13As shown, the filter layer 21 may include a first filter structure 211, a second filter structure 212, and a third filter structure 213. It should be understood that the first sub-pixel 2R includes the first filter structure 211, the second sub-pixel 2G includes the second filter structure 212, and the third sub-pixel 2B includes the third filter structure 213. The first filter structure 211 is used to allow light of the first color to pass through, the second filter structure 212 is used to allow light of the second color to pass through, and the third filter structure 213 is used to allow light of the third color to pass through.

[0155] The color filter substrate 10 may further include a black matrix 8. It should be understood that the black matrix 8 may separate pixels and prevent light leakage and color crosstalk.

[0156] Reference Fig.13 There is a gap between two adjacent sub-pixels. That is, the first filter structure 211 of the first sub-pixel 2R is spaced from the second filter structure 212 of the second sub-pixel 2G, and the second filter structure 212 of the second sub-pixel 2G is spaced from the third filter structure 213 of the third sub-pixel 2B. Due to the existence of the gap, there is a step difference between adjacent sub-pixels. Since the thickness of the filter layer 21 is small, the step difference is also small.

[0157] Continue to refer to Fig.13 The planarization layer 12 is disposed on a side of the filter layer 21 away from the base substrate 1 to substantially fill in the step differences between the sub-pixels.

[0158] Continue to refer to Fig.13 The plurality of isolation banks 9 are disposed on the surface of the planarization layer 12 away from the base substrate 1 to form a plurality of grooves 91 on the side of the planarization layer 12 away from the base substrate 1. The quantum dot structures are filled in the plurality of grooves 91.

[0159] Specifically, the plurality of grooves 91 may include a first groove 91R, a second groove 91G, and a third groove 91B. The color conversion layer 2 may include a first quantum dot structure 221 and a second quantum dot structure 222. The first sub-pixel 2R may include the first quantum dot structure 221 located in the first groove 91R, and the second sub-pixel 2G may include the second quantum dot structure 222 located in the second groove 91G. Fig.12 , the third sub-pixel 2B may include a transparent structure 223 located in the third groove 91B.

[0160] In this embodiment, the thicknesses of the first quantum dot structure 221, the second quantum dot structure 222, and the transparent structure 223 may be equal to each other. The thickness of the isolation bank 9 may be greater than the thickness of any one of the first quantum dot structure 221, the second quantum dot structure 222, and the transparent structure 223. For example, the thickness of any one of the first quantum dot structure 221, the second quantum dot structure 222, and the transparent structure 223 may be in the range of 5 to 15 μm.

[0161] In this embodiment, by setting the isolation bank, the color conversion layer, in particular the quantum dot structure, can be formed by a printing process (ie, Ink process).

[0162] Return to reference Figure 3 and Fig. 9 According to the embodiment of the present disclosure, the display panel 100 may include a color filter substrate 10 , an array substrate 20 , a backlight module 30 , and a liquid crystal layer 40 sandwiched between the color filter substrate 10 and the array substrate 20 .

[0163] It should be understood that, since the display panel 100 includes the color filter substrate 10 , the display panel 100 should have all the structures and advantages of the color filter substrate 10 , which will not be described in detail herein.

[0164] like Figure 3 and Fig. 9 As shown, the array substrate 20 may include: a base substrate 201; and a polarization component 202 disposed on the base substrate 201. The polarization component 202 may be located on the surface of the base substrate 201 facing away from the color filter substrate 10, and is used to convert the light emitted by the backlight module 30 into linear polarized light. In some embodiments of the present disclosure, the polarization component 202 may be a polarizer.

[0165] It should be understood that the array substrate 20 , the backlight module 30 and the liquid crystal layer 40 may adopt the structures of the array substrate, the backlight module and the liquid crystal layer known in the art, which will not be described in detail here.

[0166] The embodiment of the present disclosure further provides a display device, comprising the display panel provided by the above embodiment. Fig.14 , which shows a plan view of a display device according to an embodiment of the present disclosure, and the display device 700 may include any of the display panels described above. For example, the display device may be any product or component with a display function, such as a smart phone, a wearable smart watch, smart glasses, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, a car display, an e-book, or the like.

[0167] Fig.15 is a flow chart of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure. Figure 2 , Figure 4 and Fig.15 , the manufacturing method may include at least the following steps.

[0168] In step S151 , a black matrix 8 is formed on the base substrate 1 .

[0169] In step S152, a filter layer 21 is formed on the base substrate 1. For example, the filter layer 21 may include a first filter structure 211, a second filter structure 212, and a third filter structure 213 or 213'. Exemplarily, the first filter structure 211 is used to allow light of a first color to pass through, for example, the first filter structure 211 may be a red filter; the second filter structure 212 is used to allow light of a second color to pass through, for example, the second filter structure 212 may be a green filter; the third filter structure 213 or 213' is used to allow light of a third color to pass through, for example, the third filter structure 213 or 213' may be a blue filter.

[0170] For example, the first filter structure 211 , the second filter structure 212 , and the third filter structure 213 or 213 ′ may be formed by a photolithography process.

[0171] In step S153 , a quantum dot structure is formed on a side of the filter layer 21 away from the base substrate 1 .

[0172] For example, the first quantum dot structure 221 and the second quantum dot structure 222 can be formed by a photolithography process. The first quantum dot structure 221 corresponds to the first light filtering structure 211, and they can be formed using the same mask; the second quantum dot structure 222 corresponds to the second light filtering structure 212, and they can be formed using the same mask.

[0173] Optionally, a transparent structure 223 corresponding to the third filter structure 213 may also be formed on a side of the filter layer 21 away from the base substrate 1 .

[0174] In step S154 , a first covering sublayer 31 is formed on a side of the quantum dot structure away from the base substrate 1 .

[0175] For example, the first covering material may be applied by spin coating or scraping, for example, the first covering material includes silicone resin, acrylic resin, isopropyl alcohol, hardener, silicon dioxide, etc. Then, the first covering material is cured by thermal curing to form the first covering sublayer 31. For example, the curing temperature may be around 150°C.

[0176] In step S155 , a second covering sub-layer 32 is formed on a side of the first covering sub-layer 31 away from the base substrate 1 .

[0177] For example, the second covering material may be applied by spin coating, for example, the second covering material includes components such as acrylic resin, isopropyl alcohol, hardener, silicon dioxide, and photoinitiator. Then, the second covering material is flattened by a nanoimprinting process. Then, the second covering material is cured by photocuring to form the second covering sublayer 32. For example, ultraviolet light may be used to cure the second covering material.

[0178] In step S156 , a buffer layer 4 , a polarizing layer 5 and a protective layer 6 are sequentially formed on a side of the second cover sublayer 32 away from the base substrate 1 .

[0179] Fig.16 is a flow chart of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure. Figure 8 and Fig.16 , the manufacturing method may include at least the following steps.

[0180] In step S161 , a black matrix 8 is formed on the base substrate 1 .

[0181] In step S162, a filter layer 21 is formed on the base substrate 1. For example, the filter layer 21 may include a first filter structure 211, a second filter structure 212, and a third filter structure 213 or 213'.

[0182] In step S163, an isolation bank 9 is formed on the side of the black matrix 8 away from the base substrate 1. The isolation bank 9 is located between two adjacent filter structures to form a plurality of grooves 91 on the side of the filter structure away from the base substrate 1.

[0183] In step S164 , a quantum dot structure is formed in the plurality of grooves 91 .

[0184] For example, the first quantum dot structure 221 and the second quantum dot structure 222 may be formed by an inkjet printing process. The first quantum dot structure 221 corresponds to the first light filtering structure 211 ; the second quantum dot structure 222 corresponds to the second light filtering structure 212 .

[0185] Optionally, a transparent structure 223 corresponding to the third filter structure 213 may also be formed on a side of the filter layer 21 away from the base substrate 1 .

[0186] In step S165 , a barrier layer 11 is formed on a side of the quantum dot structure away from the base substrate 1 .

[0187] In step S166 , a first covering sub-layer 31 is formed on a side of the barrier layer 11 away from the base substrate 1 .

[0188] For example, the first covering material may be applied by spin coating or scraping, for example, the first covering material includes silicone resin, acrylic resin, isopropyl alcohol, hardener, silicon dioxide, etc. Then, the first covering material is cured by thermal curing to form the first covering sublayer 31. For example, the curing temperature may be around 150°C.

[0189] In step S167 , a second covering sub-layer 32 is formed on a side of the first covering sub-layer 31 away from the base substrate 1 .

[0190] For example, the second covering material may be applied by spin coating, for example, the second covering material includes components such as acrylic resin, isopropyl alcohol, hardener, silicon dioxide, and photoinitiator. Then, the second covering material is flattened by a nanoimprinting process. Then, the second covering material is cured by photocuring to form the second covering sublayer 32. For example, ultraviolet light may be used to cure the second covering material.

[0191] In step S168 , a buffer layer 4 , a polarizing layer 5 and a protective layer 6 are sequentially formed on a side of the second cover sublayer 32 away from the base substrate 1 .

[0192] Although some embodiments of the general inventive concept of the present disclosure have been illustrated and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the general inventive concept of the present disclosure, the scope of which is defined by the claims and their equivalents.

Claims

1. A color film substrate, comprising: substrate substrate; A color conversion layer disposed on the base substrate; A covering layer disposed on a side of the color conversion layer away from the base substrate; and A polarizing layer is arranged on a side of the cover layer away from the base substrate, Wherein, the polarization layer comprises a wire grid polarizer, and the cover layer comprises a first cover sublayer and a second cover sublayer, the first cover sublayer is located on a side of the color conversion layer away from the base substrate, the second cover sublayer is located on a side of the first cover sublayer away from the base substrate, and a material of the first cover sublayer is different from a material of the second cover sublayer; The color conversion layer includes a first quantum dot structure and a second quantum dot structure; The color filter substrate further includes a filter layer, a black matrix and an isolation dam, wherein the isolation dam is located on a side of the black matrix away from the base substrate, so as to form a plurality of grooves on a side of the filter layer away from the base substrate. The plurality of grooves include a first groove located in a first sub-pixel and a second groove located in a second sub-pixel, the first quantum dot structure is located in the first groove, and the second quantum dot structure is located in the second groove; The isolation dam has a first isolation dam top surface away from the substrate, the first quantum dot structure has a first top surface away from the substrate, the second quantum dot structure has a second top surface away from the substrate, and the first isolation dam top surface is farther away from the substrate than each of the first top surface and the second top surface; The isolation dam comprises a neck portion and a main body portion, the main body portion has a trapezoidal cross section, the main body portion has a maximum width, and the width of the neck portion is smaller than the maximum width of the main body portion; The first quantum dot structure has a first bottom surface close to the base substrate and a first top surface away from the base substrate, the orthographic projection of the first bottom surface on the base substrate falls within the orthographic projection of the first top surface on the base substrate, and the area of ​​the first bottom surface of the first quantum dot structure is smaller than the area of ​​the first top surface of the first quantum dot structure; and / or, The second quantum dot structure has a second bottom surface close to the base substrate and a second top surface away from the base substrate, the orthographic projection of the second bottom surface on the base substrate falls within the orthographic projection of the second top surface on the base substrate, and the area of ​​the first bottom surface of the first quantum dot structure is smaller than the area of ​​the first top surface of the first quantum dot structure.

2. The color filter substrate according to claim 1, further comprising: A buffer layer is arranged between the covering layer and the polarization layer, wherein the buffer layer includes a first buffer sublayer and a second buffer sublayer, the first buffer sublayer is arranged on a side of the wire grid polarizer close to the base substrate, the second buffer sublayer is arranged on a side of the first buffer sublayer close to the base substrate, and the refractive index of the material of the first buffer sublayer is less than the refractive index of the material of the second buffer sublayer.

3. The color filter substrate according to claim 2, further comprising: A protective layer is arranged on the side of the polarization layer away from the base substrate, wherein the protective layer includes a first protective sublayer and a second protective sublayer, the first protective sublayer is arranged on the side of the wire grid polarizer away from the base substrate, the second protective sublayer is arranged on the side of the first protective sublayer away from the base substrate, and the refractive index of the material of the first protective sublayer is less than the refractive index of the material of the second protective sublayer.

4. The color film substrate according to any one of claims 1 to 3, wherein the filter layer is located on a side of the color conversion layer close to the base substrate, the black matrix is ​​located on a side of the filter layer close to the base substrate, the filter layer comprises a first filter structure, a second filter structure and a third filter structure, the first filter structure is used to allow light with a first wavelength range to pass through, the second filter structure is used to allow light with a second wavelength range to pass through, the third filter structure is used to allow light with a third wavelength range to pass through, and the first wavelength range, the second wavelength range and the third wavelength range are different from each other.

5. The color film substrate according to claim 4, wherein: The color film substrate includes a plurality of pixels, each pixel includes at least a first sub-pixel, a second sub-pixel and a third sub-pixel, the first sub-pixel includes the first quantum dot structure and the first filter structure, the second sub-pixel includes the second quantum dot structure and the second filter structure, the third sub-pixel includes the third filter structure, the first quantum dot structure is used to convert light with a third wavelength range incident thereon into light with a first wavelength range, and the second quantum dot structure is used to convert light with a third wavelength range incident thereon into light with a second wavelength range.

6. The color film substrate according to claim 5, wherein: The third sub-pixel further includes a transparent structure, which allows light with a third wavelength range incident thereon to directly pass therethrough, and the transparent structure is located on a side of the third filter structure away from the base substrate.

7. The color film substrate according to claim 5 or 6, wherein: The orthographic projection of the first quantum dot structure on the substrate falls within the orthographic projection of the first filter structure on the substrate, and the orthographic projection of the second quantum dot structure on the substrate falls within the orthographic projection of the second filter structure on the substrate.

8. The color film substrate according to claim 6, wherein: The orthographic projection of the transparent structure on the base substrate falls within the orthographic projection of the third filter structure on the base substrate.

9. The color film substrate according to claim 5, wherein: The thickness of the first filter structure is equal to the thickness of the second filter structure, the thickness of the first quantum dot structure is equal to the thickness of the second quantum dot structure, and the thickness of the third filter structure is equal to the sum of the thicknesses of the first filter structure and the first quantum dot structure. Furthermore, the thickness of the first filter structure is smaller than the thickness of the first quantum dot structure.

10. The color film substrate according to claim 6, wherein: The thickness of the first filter structure, the thickness of the second filter structure and the thickness of the third filter structure are equal to each other, the thickness of the first quantum dot structure, the thickness of the second quantum dot structure and the thickness of the transparent structure are equal to each other, Furthermore, the thickness of the first filter structure is smaller than the thickness of the first quantum dot structure.

11. The color film substrate according to claim 1, wherein: The thickness of the first cover sublayer is greater than the thickness of the second cover sublayer.

12. The color film substrate according to claim 11, wherein: The second cover sublayer comprises at least a photoinitiator.

13. The color film substrate according to claim 3, wherein: The pitch of the wire grid polarizer is in the range of 100-140 nm; and / or, The duty cycle of the wire grid polarizer is 0.5; and / or, The thickness of the wire grid polarizer is in the range of 150-200 nm.

14. The color film substrate according to claim 13, wherein: The thickness of the first buffer sublayer is in the range of 275.5-304.5 nm, and the thickness of the second buffer sublayer is in the range of 95-105 nm; and / or, The thickness of the first protective sublayer is in the range of 427.5-472.5 nm, and the thickness of the second protective sublayer is in the range of 47.5-52.5 nm.

15. The color film substrate according to claim 14, wherein: The first buffer sublayer and the first protective sublayer are both silicon oxide layers; and / or, The second buffer sublayer and the second protection sublayer are both silicon nitride layers.

16. The color film substrate according to claim 15, wherein: The refractive indexes of the first buffer sublayer and the first protective sublayer are both within the range of 1.35 to 1.65; and / or the refractive indexes of the second buffer sublayer and the second protective sublayer are both within the range of 1.6 to 2.

0.

17. The color film substrate according to claim 1, further comprising a barrier layer, wherein: The barrier layer is located between the layer where the first quantum dot structure and the second quantum dot structure are located and the covering layer.

18. The color film substrate according to claim 1, wherein: The orthographic projection of the isolation dam on the base substrate overlaps with the orthographic projection of the black matrix on the base substrate.

19. The color film substrate according to any one of claims 5-6, 8-16, and 17, wherein: The thickness of each of the first quantum dot structure and the second quantum dot structure is in the range of 5 to 15 μm.

20. The color film substrate according to claim 3, wherein: The color filter substrate further includes an alignment layer, and the alignment layer is located on a side of the second protection sublayer away from the base substrate.

21. A display panel, wherein: The display panel comprises the color film substrate according to any one of claims 1 to 20.

22. The display panel according to claim 21, wherein: The display panel further includes: An array substrate disposed opposite to the color filter substrate; A liquid crystal layer disposed between the color filter substrate and the array substrate; and A backlight module is arranged on a side of the array substrate away from the liquid crystal layer, and the backlight module emits blue light.

23. A display device, wherein: The display device comprises the display panel according to claim 21 or 22.

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