Semiconductor circuit and method for manufacturing semiconductor circuit

Abstract

The present invention relates to a semiconductor circuit and a method for preparing a semiconductor circuit, wherein an insulating layer is provided on a circuit substrate, and a circuit layer is provided on the insulating layer; the first ends of a plurality of pins are electrically connected to the circuit layer respectively; a sealing body at least wraps a surface of the circuit substrate on which the circuit layer is provided; the circuit layer includes a driver chip, and a wireless communication component and an inverter component respectively connected to the driver chip; the driver chip is configured to detect the working parameters of the circuit layer and obtain detection data according to a control signal transmitted by the received wireless communication component; the driver chip sends the detection data to a server through the wireless communication component, so as to realize real-time feedback of the detection data to the server, and facilitate technicians to understand the use of the product more quickly and accurately. The present application effectively solves the existing problem of real-time transmission and monitoring of detection data by integrating the wireless communication component in the circuit layer and wrapping it into a highly integrated semiconductor circuit through the packaging body.

Description

Technical Field

[0001] The invention relates to a semiconductor circuit and a method for preparing the semiconductor circuit, belonging to the technical field of semiconductor circuit application. Background Art

[0002] Semiconductor circuit is a power drive product that combines power electronics and integrated circuit technology. Semiconductor circuit integrates power switching devices and high-voltage drive circuits, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the semiconductor circuit receives the control signal of the MCU to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU for processing. Compared with traditional discrete solutions, semiconductor circuits have won an increasingly large market with their advantages such as high integration and high reliability. They are especially suitable for inverters and various inverter power supplies for driving motors. They are an ideal power electronic device for variable frequency speed regulation, metallurgical machinery, electric traction, servo drive, and variable frequency home appliances. Semiconductor circuits are composed of high-speed and low-power consumption tube cores, optimized gate-level drive circuits, and fast protection circuits. Even if a load accident or improper use occurs, the semiconductor circuit itself can be protected from damage. Semiconductor circuits generally use IGBT as a power switch element, and have an integrated structure of current sensors and drive circuits. In the face of market miniaturization and low-cost competition, higher requirements are placed on the high integration and high heat dissipation technology of semiconductor circuits.

[0003] During the implementation process, the inventors found that there are at least the following problems in the traditional technology: In the terminal application of semiconductor circuits, there is basically no monitoring of the real-time performance data of semiconductor circuit products, and the performance level of the product in the actual use process cannot be understood. In terms of product iteration development, when the product fails, the technicians cannot obtain the data at the time of failure, cannot accurately analyze the failure mechanism of the product, and cannot provide better suggestions for improving the product. Moreover, there is still a problem of real-time information transmission monitoring in current semiconductor circuit products. Summary of the invention

[0004] Based on this, it is necessary to address the problem that the real-time performance monitoring data of the traditional semiconductor circuit is missing, which is not conducive to the monitoring data analysis. Provided are a semiconductor circuit and a method for preparing the semiconductor circuit.

[0005] Specifically, the present invention discloses a semiconductor circuit, comprising:

[0006] A circuit substrate, wherein an insulating layer is provided on the circuit substrate;

[0007] A circuit layer, wherein the circuit layer is arranged on the insulating layer;

[0008] A plurality of pins, wherein first ends of the plurality of pins are electrically connected to the circuit layer respectively;

[0009] A sealing body, the sealing body at least wraps a surface of the circuit substrate provided with the circuit layer, and the second end of each pin is exposed from the sealing body;

[0010] Among them, the circuit layer includes a driving chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driving chip; the driving chip is configured to receive a control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip is also configured to send the detection data to the server through the wireless communication component.

[0011] Optionally, the semiconductor circuit further includes an MCU chip connected to the driver chip; the MCU chip is used to transmit a first PWM signal to the driver chip, so that the driver chip drives the inverter component to be turned on and off according to the first PWM signal.

[0012] Optionally, the circuit layer further includes a PFC component connected to the driver chip; the driver chip is used to receive a second PWM signal transmitted by the driver chip, and drive the PFC component to be turned on and off according to the second PWM signal.

[0013] Optionally, the wireless communication component is a WIFI communication component.

[0014] Optionally, the WIFI communication component includes a WIFI chip and an antenna connected to the WIFI chip; the WIFI chip is connected to the driving chip and is located between the driving chip and the antenna.

[0015] Optionally, the semiconductor circuit also includes a crystal oscillator circuit connected to the WIFI chip.

[0016] Optionally, the driving chip includes an inverter driving circuit and an operating parameter detection circuit; the inverter driving circuit is used to receive a first PWM signal transmitted by the wireless communication component, and drive the inverter component on and off according to the first PWM signal; the operating parameter detection circuit is used to detect the operating parameters of the circuit layer, obtain detection data, and send the detection data to the server through the wireless communication component.

[0017] Optionally, the inverter drive circuit includes a high-voltage side drive circuit and a low-voltage side drive circuit; the inverter component includes a high-voltage side bridge arm and a low-voltage side bridge arm; the first PWM signal includes a high-voltage side PWM signal and a low-voltage side PWM signal;

[0018] The high-voltage side driving circuit is configured to drive the high-voltage side bridge arm on and off according to the received high-voltage side PWM signal; the low-voltage side driving circuit is configured to drive the low-voltage side bridge arm on and off according to the received low-voltage side PWM signal.

[0019] Optionally, the semiconductor circuit further includes an auxiliary substrate; the MCU chip is disposed on the auxiliary substrate.

[0020] The present invention also discloses a method for preparing the semiconductor circuit, comprising the following steps:

[0021] Providing a circuit substrate;

[0022] preparing an insulating layer on a circuit substrate;

[0023] A circuit layer is prepared on the insulating layer; wherein the circuit layer includes a driving chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driving chip;

[0024] A plurality of pins are arranged on the circuit layer, and first ends of the plurality of pins are respectively connected to the circuit layer through metal wires;

[0025] A circuit substrate provided with a circuit layer and a plurality of pins is injection molded through a packaging mold to form a sealing body, and the second end of each pin is led out from the first side surface of the sealing body to form a semiconductor circuit.

[0026] One of the above technical solutions has the following advantages and beneficial effects:

[0027] In each embodiment of the semiconductor circuit described above, an insulating layer is provided on the circuit substrate, and the circuit layer is provided on the insulating layer; the first ends of the plurality of pins are electrically connected to the circuit layer respectively; the sealing body at least wraps one surface of the circuit substrate on which the circuit layer is provided, and the second end of each pin is exposed from the sealing body; the circuit layer includes a driver chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driver chip; the driver chip is configured to receive a control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driver chip sends the detection data to the server through the wireless communication component, so as to realize real-time feedback of the detection data to the server. This application effectively solves the existing real-time transmission and monitoring problem of detection data by integrating the wireless communication component in the circuit layer and wrapping the packaging body into a highly integrated semiconductor circuit, and provides convenient and reliable big data for the Internet of Things. It realizes real-time transmission of detection data such as operating temperature, voltage, current, fault, etc. to the server, and cloud storage is performed through the server, so that the technicians can understand the use of the product more quickly and accurately, and provide powerful data for the later iterative development of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the structure of a traditional semiconductor circuit;

[0029] Figure 2 is a schematic diagram of the internal structure of a semiconductor circuit according to an embodiment of the present invention;

[0030] Figure 3 A schematic diagram of an electrical transmission architecture of a semiconductor circuit according to an embodiment of the present invention;

[0031] Figure 4 is a SMT schematic diagram of a semiconductor circuit according to an embodiment of the present invention;

[0032] Figure 5 The figure is a schematic flow chart of a method for manufacturing a semiconductor circuit according to an embodiment of the present invention.

[0033] Reference numerals:

[0034] Circuit substrate 100 , pins 200 , sealing body 300 , driving chip 400 , WIFI communication component 500 , WIFI chip 510 , antenna 520 , inverter component 600 , MCU chip 700 , PFC component 800 , crystal oscillator circuit 900 . DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0036] It should be noted that, in the case where the structures or functions do not conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0037] Traditional semiconductor circuits, such as Figure 1 As shown, it includes a circuit substrate and pins, and the pins are connected to the circuit layer on the circuit substrate. Usually, there is no wireless communication component on the circuit layer, which causes the detection data detected by the traditional semiconductor circuit to be unable to be transmitted to the server in real time, so that the technicians cannot obtain the detection data of the semiconductor circuit in real time, cannot accurately analyze the failure mechanism of the product, and cannot provide better suggestions for improving the product. The problem of real-time information transmission and monitoring still exists in traditional semiconductor circuit products.

[0038] In one embodiment, Figure 2-4As shown, the present invention proposes a semiconductor circuit, which includes a circuit substrate 100, a circuit layer, a plurality of pins 200 and a sealing body 300; an insulating layer is provided on the circuit substrate 100; the circuit layer is arranged on the insulating layer; the first ends of the plurality of pins 200 are electrically connected to the circuit layer respectively; the sealing body 300 at least wraps a surface of the circuit substrate 100 on which the circuit layer is arranged, and the second end of each pin 200 is exposed from the sealing body 300; wherein the circuit layer includes a driving chip 400, a wireless communication component and an inverter component 600; the wireless communication component and the inverter component 600 are respectively connected to the driving chip 400; the driving chip 400 is configured to receive a control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip 400 is also configured to send the detection data to the server through the wireless communication component.

[0039] Among them, the circuit substrate 100 can be used to carry the driving circuit and corresponding components of the entire semiconductor circuit. The circuit substrate 100 can be made of metal materials, such as a rectangular plate made of aluminum made of materials such as 1100, 5052, etc., and its thickness is much thicker than other layers, generally 0.8mm to 2mm, and the commonly used thickness is 1.5mm, which mainly realizes the heat conduction and heat dissipation of components such as power devices. For example, the circuit substrate 100 can also be made of other metal materials with good thermal conductivity, for example, it can be a rectangular plate made of copper. It should be noted that the shape of the circuit substrate 100 of the present application is not limited to a rectangular shape, and can also be a circular or trapezoidal shape. An insulating layer is provided on the circuit substrate 100, and the insulating layer can be used to prevent the circuit layer from conducting electricity with the circuit substrate 100. The insulating layer is provided on the surface of the circuit substrate 100, and its thickness is relatively thinner than the circuit substrate 100, generally 50um to 150um, and 110um is commonly used. A circuit layer is provided on the insulating layer so that the circuit layer is insulated from the circuit substrate 100. The circuit layer is provided with internal circuits such as power switch devices, drive circuits, and fault detection circuits. The power switch devices, high-voltage drive circuits, and fault detection circuits are electrically connected through metal wires.

[0040] The pin 200 can be used to transmit signals to the corresponding internal circuit on the circuit substrate 100, and transmit the signal output by the corresponding internal circuit on the circuit layer to the external module. The plurality of pins 200 can be divided into a plurality of low-voltage side pins 200 and a plurality of high-voltage side pins 200 according to the voltage strength of the transmission signal. The low-voltage side pin 200 refers to a pin 200 terminal for transmitting a low-voltage logic control signal, and the plurality of low-voltage side pins 200 are arranged at at least one side edge of the circuit substrate 100, and the low-voltage side pin 200 is electrically connected to the circuit layer on the circuit substrate 100; the plurality of low-voltage side pins 200 are welded to the pads of the circuit layer on the circuit substrate 100 by welding such as solder paste welding, so as to realize electrical connection with the circuit layer on the circuit substrate 100. For example, the low-voltage side pins 200 can be electrically connected to the fault detection circuit on the circuit layer through metal wires, respectively, wherein the metal wires can be copper wires. The high-voltage side pin 200 refers to a pin 200 terminal for transmitting a high-voltage power output signal. A plurality of high-voltage side pins 200 are arranged at at least one side edge of the circuit substrate 100, and the high-voltage side pins 200 are electrically connected to the circuit layer on the circuit substrate 100; the plurality of high-voltage side pins 200 are welded to the pads of the circuit layer on the circuit substrate 100 by welding, such as solder paste welding, so as to realize electrical connection with the circuit layer on the circuit substrate 100. For example, the high-voltage side pins 200 can be electrically connected to the power switch device and the high-voltage drive circuit on the circuit layer respectively through metal wires, wherein the metal wires can be copper wires.

[0041] The material of the pin 200 can be C194 (-1 / 2H) sheet (chemical composition: Cu (≧97.0), Fe: 2.4, P: 0.03, Zn: 0.12) or KFC (-1 / 2H) sheet (chemical composition: Cu (≧99.6), Fe: 0.1 (0.05~0.15), P: 0.03 (0.025~0.04)), and 0.5mm C194 or KFC sheet is processed by stamping or etching process, and then the surface is first nickel-plated with a thickness of 0.1-0.5um and then tin-plated with a thickness of 2-5um; the redundant connecting ribs of the pin 200 are cut off and shaped into the required shape by specific equipment.

[0042] It should be noted that after each pin 200 passes through the first side surface of the sealing body 300 , each pin 200 is bent through a bending process to obtain a first bent end, and then the end of the first bent end is bent to obtain a second bent end. The first bent end may be parallel to the circuit substrate 100 .

[0043] The circuit layer may include a circuit wiring layer and circuit elements configured on the circuit wiring layer; the circuit wiring layer is arranged on the insulating layer. Among them, the circuit wiring layer is composed of metals such as copper and is insulated from the circuit substrate 100200. The circuit wiring layer includes a circuit line composed of etched copper foil, and the thickness of the circuit layer is also relatively thin, such as about 70um. In one example, the circuit wiring layer also includes a pad arranged near the side position of the circuit substrate 100, and the above-mentioned circuit wiring layer can be formed by 2 ounces of copper foil. Finally, a thinner green oil layer can be coated on the circuit wiring layer to play a circuit isolation role and cut off the electrical connection between the circuit lines. Multiple circuit elements are arranged on the circuit wiring layer, and multiple circuit elements or circuit elements and the circuit wiring layer can be electrically connected through metal wires; the circuit elements can be fixed to the circuit wiring layer by welding. In one example, the circuit elements include circuit elements corresponding to the inverter component 600 (such as IGBT and fast recovery diode) and circuit elements corresponding to the driver chip 400 (such as diodes, transistors, resistors and capacitors, etc.).

[0044] In one example, the circuit element may be an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. In addition, a heat sink made of copper or the like may be used to fix a high-heat-generating element such as a power element on the circuit substrate 100. The insulating layer is formed by covering at least one surface of the circuit substrate 100. The resin material such as epoxy resin forming the sealing layer may be filled with fillers such as alumina and silicon carbide aluminum at a high concentration to improve the thermal conductivity. In order to improve the thermal conductivity, the filler may be angular, and in order to avoid the risk of the filler damaging the surface of the circuit element, the filler may be spherical.

[0045] The driver chip 400 may include corresponding circuit wiring and circuit elements in the circuit wiring layer. The driver chip 400 may be used to drive the inverter component 600 to work. The driver chip 400 (i.e., the HVIC driver chip 400) is bonded to the circuit substrate 100 using silver glue or solder. The driver chip 400 may be connected to the circuit layer using bonding wires such as gold, copper, or aluminum, and may be connected to the inverter component 600 (such as a power MOS tube or IGBT) using bonding wires such as gold, copper, or aluminum. The driver chip 400 may also be used to detect the working parameters of the circuit layer and obtain detection data. The inverter component 600 includes corresponding circuit wiring and circuit elements in the circuit wiring layer; the inverter component 600 may be used to control the high-voltage side load to work or the low-voltage side load to work, and may also be used to control the high-voltage side load and the low-voltage side load to work separately. The inverter component 600 may be a full-bridge arm inverter module, and the inverter component 600 may also be a half-bridge arm inverter module. The inverter assembly 600 may be a three-phase inverter assembly 600; the inverter assembly 600 may be used to drive an external three-phase motor to work. The inverter assembly 600 may include a plurality of IGBTs, diodes (FRDs), and resistors and capacitors; the plurality of IGBTs, diodes (FRDs), and resistors and capacitors may be bonded to the circuit substrate 100 by silver glue or solder, and may be connected to the corresponding pins 200 by bonding wires such as gold, copper, or aluminum.

[0046] The wireless communication component includes corresponding circuit wiring and circuit elements in the circuit wiring layer; the wireless communication component is a signal converter for transmitting and receiving wireless signals. The wireless communication component can receive the detection data of the circuit layer transmitted by the driver chip 400 (i.e., the real-time signal of the working status), and transmit the received detection data to the server. The wireless communication component can also be used to receive the control signal sent by the server, and transmit the control signal to the driver chip 400, so that the driver chip 400 detects the working parameters of the circuit layer according to the control signal. For example, the driver chip 400 can detect the current working temperature, working voltage, working current and other detection data.

[0047] The sealing body 300 can be used to plastic-encapsulate the circuit substrate 100 electrically connected to a plurality of pins 200 and a circuit layer, so that the circuit layer connected to each pin 200 is wrapped in the sealing body 300, which plays a role in protecting the internal circuit and insulating and withstanding voltage. During the preparation process of the sealing body 300, the circuit layer electrically connected to a plurality of pins 200 can be plastic-encapsulated in the sealing body 300 by a plastic-encapsulation process and a plastic-encapsulation mold. The material of the sealing body 300 can be a thermosetting polymer, such as epoxy resin, phenolic resin, silica gel, amino, unsaturated resin; in order to improve the heat dissipation capacity, the sealing body 300 can be a composite material containing powder or fiber of metal, ceramic, silicon oxide, graphene, etc. In one example, the material used for the sealing body 300 can be a molding compound with epoxy resin as the base resin, high-performance phenolic resin as the curing agent, silicon micropowder as the filler, and a variety of additives.

[0048] According to different design requirements, different shapes of plastic encapsulation molds can be designed, and then different shapes and structures of the sealed body 300 can be obtained by plastic encapsulation. For example, the sealed body 300 can be a rectangular parallelepiped structure. By using an injection mold molding method using a thermoplastic resin or a transfer mold molding method using a thermosetting resin, the circuit layer connected to each pin 200 and provided with a driver chip 400, a wireless communication component and an inverter component 600 is wrapped to play a protective role.

[0049] Furthermore, a plastic encapsulation mold corresponding to the semiconductor circuit of the present application can be obtained by design. During the preparation process, the first end of each pin 200 is electrically connected to the circuit layer, and through the plastic encapsulation process, a pre-designed plastic encapsulation mold is used to plastic-encapsulate one surface of the circuit substrate 100 electrically connected to a plurality of pins 200 in the sealing body 300. It should be noted that, in some embodiments, the circuit substrate 100 electrically connected to a plurality of pins 200 can be completely plastic-encapsulated in the sealing body 300 by the plastic encapsulation mold.

[0050] In the above-mentioned embodiment, an insulating layer is provided on the circuit substrate 100, and the circuit layer is provided on the insulating layer; the first ends of the plurality of pins 200 are electrically connected to the circuit layer respectively; the sealing body 300 at least wraps a surface of the circuit substrate 100 on which the circuit layer is provided, and the second end of each pin 200 is exposed from the sealing body 300; the circuit layer includes a driver chip 400, a wireless communication component and an inverter component 600; the wireless communication component and the inverter component 600 are respectively connected to the driver chip 400; the driver chip 400 is configured to receive a control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driver chip 400 sends the detection data to the server through the wireless communication component, so as to realize real-time feedback of the detection data to the server. This application effectively solves the existing real-time transmission and monitoring problem of detection data by integrating the wireless communication component in the circuit layer and wrapping it into a highly integrated semiconductor circuit through the packaging body, and provides convenient and reliable big data for the Internet of Everything. It can transmit the working temperature, voltage, current, fault and other detection data to the server in real time and store them in the cloud through the server, so that technicians can understand the usage of the product more quickly and accurately, and provide powerful data for the later iterative development of the product.

[0051] In one example, the insulating layer is formed by covering at least one surface of the circuit substrate 100. The epoxy resin or other resin material forming the sealing layer can be filled with fillers such as aluminum oxide and silicon carbide aluminum at a high concentration to improve thermal conductivity. In order to improve thermal conductivity, the filler can be angular. In order to avoid the risk of the filler damaging the surface of the circuit element, the filler can be spherical. The pin 200 is generally made of metal such as copper. A nickel-tin alloy layer is formed on the copper surface by chemical plating and electroplating. The thickness of the alloy layer is generally 5μm. The plating can protect the copper from corrosion and oxidation and improve weldability.

[0052] In some embodiments of the present invention, Figure 3 As shown, the semiconductor circuit also includes an MCU chip 700 connected to the driver chip 400; the MCU chip 700 is used to transmit a first PWM signal to the driver chip 400, so that the driver chip 400 drives the inverter component 600 to be turned on and off according to the first PWM signal.

[0053] Among them, the MCU (single-chip microcomputer) chip is a micro control unit, also known as a single-chip microcomputer or a single-chip microcomputer. It is a chip-level computer that performs different combination controls for different applications. It has a fast speed and the program can be encrypted, but its processing power is limited. It is suitable for use in highly integrated, size, power consumption and other restricted control fields. The MCU chip 700 can be set on an auxiliary substrate. The first side of the auxiliary substrate is provided with an MCU mounting area. During packaging, the MCU mounting area is exposed from the sealing body 300, thereby facilitating the installation of the MCU chip 700 in the MCU mounting area and facilitating the removal of the MCU chip 700 from the MCU mounting area. The MCU chip 700 can send a control signal (such as a first PWM signal) according to a predetermined program.

[0054] Specifically, based on the MCU chip 700 connecting the driver chip 400, the MCU chip 700 can transmit a first PWM signal to the driver chip 400, and the driver chip 400 can convert the first PWM signal into a driving frequency to drive the inverter component 600, so that the inverter component 600 controls the operation of the external three-phase motor.

[0055] In some embodiments of the present invention, Figure 2 and 4 As shown, the circuit layer also includes a PFC component 800 connected to the driver chip 400; the driver chip 400 is used to receive a second PWM signal transmitted by the driver chip 400, and drive the PFC component 800 to be turned on and off according to the second PWM signal.

[0056] Among them, the PFC (Power Factor Correction) component can be used to improve the power factor of the equipment. It should be noted that the power factor refers to the relationship between effective power and total power consumption (apparent power), that is, the ratio of effective power to total power consumption (apparent power). The power factor can measure the degree to which electricity is effectively utilized. The larger the power factor value, the higher the power utilization rate. In one example, the PFC component 800 may include circuit elements such as a first IGBT (Insulated Gate Bipolar Transistor), a fast recovery diode and a Schottky diode. The gate coupling of the first IGBT is connected to the PFC drive output terminal group of the PFC drive circuit, the fast recovery diode D2 is connected between the collector and the emitter of the first IGBT, and the Schottky diode is connected between the collector and the power supply. The corresponding device chips of the PFC component 800 are mounted on the corresponding component installation positions of the circuit layer by brushing solder paste or applying silver glue, and the corresponding resistors and capacitors of the PFC component 800 are mounted on the corresponding component installation positions of the circuit layer by automatic SMT equipment; then the entire semi-finished product is passed through a reflow furnace to solder all the components to the corresponding installation positions, and the welding quality of the components is inspected by visual inspection AOI equipment; foreign matter such as flux and aluminum chips remaining on the circuit substrate 100 is removed by spraying, ultrasonic and other cleaning methods, and a connection is formed between the PFC component 800 and the circuit wiring through bonding wires to achieve the installation of the PFC component 800, thereby realizing the semiconductor circuit of the integrated PFC component 800.

[0057] Specifically, based on the connection between the PFC component 800 and the driver chip 400, the MCU chip 700 can transmit a second PWM signal to the driver chip 400, and the driver chip 400 can convert the second PWM signal into a driving frequency to drive the PFC component 800, thereby realizing the PFC component 800 controlling current rectification and power factor correction functions.

[0058] In some embodiments of the present invention, Figure 3 As shown, the wireless communication component is a WIFI communication component 500 .

[0059] The WIFI communication component 500 includes a WIFI chip 510 and an antenna 520 connected to the WIFI chip 510 ; the WIFI chip 510 is connected to the driving chip 400 and is located between the driving chip 400 and the antenna 520 .

[0060] Among them, the WIFI chip 510 can be used for wireless transmission of signals; the antenna 520 refers to the radio frequency line. The WIFI chip 510 is set between the driver chip 400 and the antenna 520. When the product is packaged, the end of the antenna 520 extends to maintain signal transmission with the environment; by setting the antenna 520 on the side of the current substrate, it can be away from the inverter drive signal to avoid signal interference and false triggering; by embedding the antenna 520 in the sealed body 300 and partially exposing it from the sealed body 300, it can avoid installation inconvenience.

[0061] Specifically, the WIFI chip 510 is connected between the driver chip 400 and the antenna 520, and then the antenna 520 can receive the control signal transmitted by the external terminal, and transmit the control signal to the WIFI chip 510, and then the WIFI chip 510 transmits the control signal to the driver chip 400, so that the driver chip 400 controls the working parameters of the detection circuit layer according to the control signal to obtain the detection data. The driver chip 400 can transmit the detected detection data to the WIFI chip 510, and then the WIFI chip 510 can send it to the server through the antenna 520, so as to realize the cloud storage of the detection data, which is convenient for technicians to understand the use of the product more quickly and accurately, and provide powerful data for the later iterative development of the product.

[0062] In some embodiments of the present invention, Figure 3 In the embodiment, the semiconductor circuit further includes a crystal oscillator circuit 900 connected to the WIFI chip 510 .

[0063] Among them, the crystal oscillator circuit 900 is used to generate the frequency of controlling and managing all communication systems. It is an important component in clocks and microprocessors. The crystal oscillator plays a very important role in WiFi technology. The crystal oscillator needs to have high precision, high stability and anti-interference ability to ensure the normal function of the WiFi component. The crystal oscillator frequency can be 20MHZ or 40MHZ.

[0064] Specifically, the crystal oscillator circuit 900 is connected to the WIFI chip 510, and the crystal oscillator circuit 900 can provide a precise clock frequency to the WIFI chip 510, thereby improving the stability of signal transmission.

[0065] Furthermore, the crystal oscillator circuit 900 can be arranged on the second surface of the auxiliary substrate. During packaging, the second surface of the auxiliary substrate is packaged on the sealing body 300, that is, the crystal oscillator circuit 900 is also packaged on the sealing body 300. By arranging the crystal oscillator circuit 900 on the auxiliary substrate, the crystal oscillator circuit 900 is separated from the high-voltage circuit components on the circuit substrate 100, thereby avoiding signal interference and affecting the accuracy of the hour hand.

[0066] In some embodiments of the present invention, the driving chip 400 includes an inverter driving circuit and an operating parameter detection circuit; the inverter driving circuit is used to receive a first PWM signal transmitted by the wireless communication component, and drive the inverter component 600 on and off according to the first PWM signal; the operating parameter detection circuit is used to detect the operating parameters of the circuit layer, obtain detection data, and send the detection data to the server through the wireless communication component.

[0067] Among them, the inverter drive circuit can be used to drive the on or off control of the inverter component 600; the working parameter detection circuit can be used to detect the working temperature, voltage, current, fault and other detection data on the circuit layer. Based on the working parameter detection circuit connecting the wireless communication component, the inverter drive circuit can receive the control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain the detection data; the working parameter detection circuit can also send the detection data to the server through the wireless communication component, so as to realize the real-time feedback of the detection data to the server, and realize the real-time transmission of the working temperature, voltage, current, fault and other detection data to the server, and perform cloud storage through the server, so as to facilitate the technicians to understand the use of the product faster and more accurately, and provide powerful data for the later iterative development of the product. Based on the inverter drive circuit connecting the wireless communication component, the MCU chip 700 can transmit the first PWM signal to the inverter drive circuit, and the inverter drive circuit can convert the first PWM signal into a driving frequency to drive the inverter component 600, so as to realize the inverter component 600 to control the external three-phase motor to work.

[0068] In one example, the operating parameter detection circuit includes a temperature detection subcircuit. The temperature detection subcircuit may include a temperature sensor (such as a thermistor), which can detect the current temperature of the location where the temperature sensor is located (i.e., the internal circuit of the chip), and then upload the detected current temperature data to the server through the wireless communication component. In this way, according to the internal temperature of the chip circuit, the fan is driven to dissipate the heat of the chip circuit, so as to avoid the internal temperature of the chip circuit being too high and burning the chip circuit, thereby improving the heat dissipation and cooling effect of the chip circuit while realizing the chip driving function.

[0069] Furthermore, the working parameter detection circuit also includes an undervoltage protection circuit, an overcurrent protection circuit and an overtemperature protection circuit. The undervoltage protection circuit can be used to detect the undervoltage of the power supply, and when the power supply is detected to be in an undervoltage state, the output power of the power supply can be disconnected in time, thereby playing a role in undervoltage protection of the power supply inside the chip. The overcurrent protection circuit can realize the overcurrent protection function of the internal circuit of the driver chip 400. The overcurrent protection circuit can monitor the working current of the driver chip 400 in real time, and when it is detected that the working current exceeds the current warning value, the chip operation can be cut off in time, thereby preventing the chip working current from being too high and burning the chip, thereby playing a role in overcurrent protection of the internal circuit of the driver chip 400. The overtemperature protection circuit can realize the overtemperature protection function of the internal circuit of the driver chip 400. The overtemperature protection circuit can be based on the current temperature detected by the temperature detection circuit, and when it is detected that the current temperature exceeds the temperature warning value, the chip operation can be cut off in time, thereby preventing the chip working voltage from being too high and burning the chip, thereby playing a role in overtemperature protection of the internal circuit of the driver chip 400 (inverter drive circuit).

[0070] In an example, the driver chip 400 further includes a PFC driver circuit, and the PFC driver circuit can be used to control the on and off of the PFC component 800 .

[0071] In some embodiments of the present invention, the inverter drive circuit includes a high-voltage side drive circuit and a low-voltage side drive circuit; the inverter component 600 includes a high-voltage side bridge arm and a low-voltage side bridge arm; the first PWM signal includes a high-voltage side PWM signal and a low-voltage side PWM signal; the high-voltage side drive circuit is configured to drive the high-voltage side bridge arm on and off according to the received high-voltage side PWM signal; the low-voltage side drive circuit is configured to drive the low-voltage side bridge arm on and off according to the received low-voltage side PWM signal.

[0072] Among them, the inverter component 600 may include a high-voltage side bridge arm (i.e., an upper bridge arm module) and a low-voltage side bridge arm (i.e., a lower bridge arm module), and the inverter drive circuit includes a high-voltage side drive circuit and a low-voltage side drive circuit; the high-voltage side drive circuit can be used to drive the conduction or shutdown of the high-voltage side bridge arm; the high-voltage side bridge arm (i.e., the upper bridge arm) can be used to control the operation of the high-voltage side load. The high-voltage side bridge arm can be a full bridge arm, or a half bridge arm. The low-voltage side drive circuit can be used to drive the conduction or shutdown of the low-voltage side bridge arm; the low-voltage side bridge arm (i.e., the lower bridge arm) can be used to control the operation of the low-voltage side load. The low-voltage side bridge arm can be a full bridge arm, or a half bridge arm.

[0073] Specifically, by inputting a high-side PWM signal to the high-side driving circuit, the high-side driving circuit receives the high-side PWM signal transmitted by the wireless communication component, and drives the high-side bridge arm according to the received high-side PWM signal, so that the high-side bridge arm drives and controls the high-side load, thereby realizing the driving function of the high-voltage side bridge arm of the chip. By inputting a low-voltage PWM signal to the low-voltage driving circuit, the low-voltage driving circuit receives the high-side PWM signal transmitted by the wireless communication component, and drives the low-voltage side bridge arm according to the received high-side PWM signal, so that the low-voltage side bridge arm drives and controls the low-voltage side load, thereby realizing the driving function of the low-voltage side bridge arm of the chip.

[0074] Furthermore, the high-voltage side bridge arm may include 3 IGBTs and 3 freewheeling diode assemblies; the low-voltage side bridge arm may include 3 IGBTs and 3 freewheeling diode assemblies.

[0075] The present invention also discloses a method for preparing the semiconductor circuit as described above. Figure 5 As shown, the preparation method comprises the following steps:

[0076] Step S100: providing a circuit substrate.

[0077] Step S200: preparing an insulating layer on a circuit substrate.

[0078] Step S300, preparing a circuit layer on the insulating layer; wherein the circuit layer includes a driving chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driving chip.

[0079] Step S400: multiple pins are arranged on the circuit layer, and first ends of the multiple pins are respectively connected to the circuit layer through metal wires.

[0080] Step S500: injection-molding the circuit substrate provided with the circuit layer and a plurality of pins through a packaging mold to form a sealing body, and leading the second end of each pin out from the first side surface of the sealing body to form a semiconductor circuit.

[0081] Specifically, the specific preparation process of the semiconductor circuit is as follows: design a circuit substrate of appropriate size according to the required circuit layout; place the prepared circuit substrate into a special carrier (the carrier can be aluminum, synthetic stone, ceramic, PPS and other materials that are resistant to high temperatures above 200°C), prepare an insulating layer on the circuit substrate, and then press copper foil on the surface of the insulating layer, and then etch the copper foil and partially remove the copper foil to form a circuit wiring layer; in the component installation positions reserved in the circuit layer, brush solder paste or apply silver glue to the bridge arm module, fan switch module and driver chip corresponding electronic components (IGBT, power MOS tube, fast recovery diode, etc.) through silver glue or solder to the component installation positions, and mount resistors and capacitors to the components through automatic SMT equipment. The pins are placed in the corresponding installation positions by a robot or manually and fixed by a carrier; then the entire semi-finished product including the carrier is passed through a reflow furnace to solder all the components to the corresponding installation positions, the welding quality of the components is inspected by visual inspection AOI equipment, and foreign matter such as flux and aluminum chips remaining on the metal aluminum substrate is removed by spraying, ultrasonic and other cleaning methods, and the circuit elements and circuit wiring contained in the driver chip, the circuit elements contained in the wireless communication component (such as WIFI chip and antenna) and the inverter component (such as IGBT, freewheeling diode and resistor and capacitor) are connected through bonding wires, so that the wireless communication component and the inverter component are electrically connected to the driver chip respectively, thereby forming a circuit layer on the circuit substrate.

[0082] All pins (such as low-voltage pins and high-voltage pins) are made of metal substrates such as copper substrates, such as long strips with a length C of 25mm, a width K of 1.5mm, and a thickness H of 1mm. For ease of assembly, one end can be pressed and shaped to a certain curvature, and then a nickel layer is formed on the surface of the pin by chemical plating: a nickel layer is formed on the surface of the copper material that has formed a specific shape through a mixed solution of nickel salt and sodium hypophosphite, and an appropriate complexing agent is added. The metal nickel has a strong passivation ability and can quickly generate a very thin passivation film that can resist corrosion from the atmosphere, alkali and certain acids. The nickel plating crystals are extremely fine, and the thickness of the nickel layer is generally 0.1μm; then, through the acid sulfate process, the copper material that has formed a shape and a nickel layer is immersed in a plating solution with positive tin ions at room temperature and energized to form a nickel-tin alloy layer on the surface of the nickel layer. The thickness of the nickel layer is generally controlled at 5μm. The formation of the nickel layer greatly improves the protection and solderability. In this way, the preparation of the pin is completed. Then, the first end of each pin is prepared on the circuit layer by reflow soldering and curing of solder paste or silver paste.

[0083] A pre-designed plastic encapsulation mold is used. During the preparation process, a plastic encapsulation process can be used to plastic encapsulate a circuit substrate electrically connected with multiple pins, a driver chip, a wireless communication component, and an inverter component in the plastic encapsulation mold through a plastic encapsulation process. Finally, demolding is performed. After demolding, the plastic encapsulation compound forms a sealed body, and the circuit substrate electrically connected with multiple pins, a driver chip, a wireless communication component, and an inverter component is plastic encapsulated in the sealed body, with only the pins exposed.

[0084] Finally, after processes such as marking, PMC post-curing, rib cutting and forming, a packaged semi-finished product is formed; the product is tested for electrical performance using an electrical parameter testing machine to form a semiconductor circuit.

[0085] In the above embodiments, based on the preparation process of the semiconductor circuit of the present application, by integrating the wireless communication component in the circuit layer and wrapping it into a highly integrated semiconductor circuit through the packaging body, the existing real-time transmission and monitoring problem of detection data is effectively solved, providing convenient and reliable big data for the Internet of Everything. The detection data such as operating temperature, voltage, current, fault, etc. can be transmitted to the server in real time, and cloud storage is performed through the server, which facilitates technicians to understand the use of the product faster and more accurately, and provides powerful data for the later iterative development of the product.

[0086] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0087] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0088] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0089] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0090] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0091] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A semiconductor circuit, characterized in that: include: A circuit substrate, wherein an insulating layer is provided on the circuit substrate; A circuit layer, wherein the circuit layer is disposed on the insulating layer; A plurality of pins, wherein first ends of the plurality of pins are electrically connected to the circuit layer respectively; A sealing body, the sealing body at least wraps a surface of the circuit substrate on which the circuit layer is disposed, and the second end of each of the pins is exposed from the sealing body; Wherein, the circuit layer includes a driving chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driving chip; the driving chip is configured to receive a control signal transmitted by the wireless communication component, and detect the working parameters of the circuit layer according to the control signal to obtain detection data; the driving chip is also configured to send the detection data to a server through the wireless communication component; The semiconductor circuit further comprises an MCU chip connected to the driving chip; the MCU chip is used to transmit a first PWM signal to the driving chip, so that the driving chip drives the switching of the inverter component according to the first PWM signal; The wireless communication component is a WIFI communication component; The WIFI communication component includes a WIFI chip and an antenna connected to the WIFI chip; the WIFI chip is connected to the driving chip and is located between the driving chip and the antenna; The driving chip includes an inverter driving circuit and an operating parameter detection circuit; the inverter driving circuit is used to receive the first PWM signal transmitted by the wireless communication component, and drive the inverter component to be turned on and off according to the first PWM signal; the operating parameter detection circuit is used to detect the operating parameters of the circuit layer, obtain detection data, and send the detection data to the server through the wireless communication component; The semiconductor circuit also includes an auxiliary substrate; the MCU chip is arranged on the auxiliary substrate.

2. The semiconductor circuit according to claim 1, characterized in that The circuit layer also includes a PFC component connected to the driving chip; the driving chip is used to receive a second PWM signal transmitted by the driving chip, and drive the PFC component to be turned on and off according to the second PWM signal.

3. The semiconductor circuit according to claim 1, wherein: The semiconductor circuit also includes a crystal oscillator circuit connected to the WIFI chip.

4. The semiconductor circuit according to claim 1, wherein: The inverter drive circuit includes a high-voltage side drive circuit and a low-voltage side drive circuit; the inverter component includes a high-voltage side bridge arm and a low-voltage side bridge arm; the first PWM signal includes a high-voltage side PWM signal and a low-voltage side PWM signal; The high-voltage side driving circuit is configured to drive the high-voltage side bridge arm to be turned on and off according to the received high-voltage side PWM signal; the low-voltage side driving circuit is configured to drive the low-voltage side bridge arm to be turned on and off according to the received low-voltage side PWM signal.

5. A method for preparing a semiconductor circuit according to any one of claims 1 to 4, characterized in that: The following steps are involved: Providing a circuit substrate; preparing an insulating layer on the circuit substrate; A circuit layer is prepared on the insulating layer; wherein the circuit layer includes a driving chip, a wireless communication component and an inverter component; the wireless communication component and the inverter component are respectively connected to the driving chip; A plurality of pins are arranged on the circuit layer, and first ends of the plurality of pins are respectively connected to the circuit layer through metal wires; The circuit substrate provided with the circuit layer and the plurality of pins is injection molded through a packaging mold to form a sealing body, and the second end of each pin is led out from the first side surface of the sealing body to form the semiconductor circuit.

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