Manufacturing method of LED substrate, LED substrate and LED display module

Abstract

Embodiments of the present invention disclose a manufacturing method of an LED substrate, an LED substrate, and an LED display module. The method includes: forming a transparent conductive layer on a transparent substrate; forming a seed layer on the transparent conductive layer, with the seed layer partially covering the transparent conductive layer; forming a barrier wall on the transparent conductive layer; wherein, the barrier wall partially covers the transparent conductive layer, and along the horizontal direction of the transparent conductive layer, the barrier wall surrounds the seed layer; along the thickness direction of the transparent conductive layer, the height of the barrier wall is greater than the height of the seed layer; forming an electrode on the side of the seed layer away from the transparent conductive layer; wherein, along the thickness direction of the transparent conductive layer, the distance from the surface of the electrode away from the transparent conductive layer to the transparent conductive layer is greater than or equal to the distance from the surface of the barrier wall away from the transparent conductive layer to the transparent conductive layer; and isolating the transparent conductive layer at the communicating part of the transparent conductive layer covered by different seed layers. This solution realizes the simplification of the manufacturing process of the LED substrate while ensuring the low resistivity characteristic of the LED substrate.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technology, and in particular, to a method for manufacturing an LED substrate, an LED substrate, and an LED display module. Background Art

[0002] Mini Light Emitting Diode (MiniLED) / Micro Light Emitting Diode (Micro LED) technology is the miniaturization of Light Emitting Diode (LED) technology, and is a high-density and small-sized LED array display technology. Due to the advantages of self-luminescence, high brightness, low power consumption, high color gamut, etc., this technology has received wide attention and is gradually popularized in the market.

[0003] However, due to the light-emitting characteristics of LEDs themselves, they need to work under a large current to achieve high luminous efficiency and generate a stable emission spectrum. Therefore, MiniLED technology and Micro LED technology pose high requirements on the current supply network of the entire light-emitting circuit, and usually reduce the resistivity by increasing the thickness of the conductive layer. For increasing the thickness of the conductive layer, electroplating technology is usually used to rapidly grow a high-thickness metal layer.

[0004] Currently, the manufacturing of Micro LED substrates is to form a through hole and a seed layer above the bonding metal layer after setting the bonding metal layer and a relatively thick planarization layer, and finally grow a relatively thick conductive metal layer. Although the manufacturing method of Micro LED substrates can achieve a conductive layer with low resistivity, the overall process is relatively complex. Summary of the Invention

[0005] Embodiments of the present invention provide a method for manufacturing an LED substrate, an LED substrate, and an LED display module, which simplifies the manufacturing process of the LED substrate while ensuring the characteristics of low resistivity of the LED substrate.

[0006] In a first aspect, embodiments of the present invention provide a method for manufacturing an LED substrate, which includes:

[0007] Forming a transparent conductive layer on a transparent substrate;

[0008] Forming a seed layer on the transparent conductive layer, and the seed layer partially covers the transparent conductive layer;

[0009] Forming a barrier on the transparent conductive layer; wherein, the barrier partially covers the transparent conductive layer, and along the horizontal direction of the transparent conductive layer, the barrier surrounds the seed layer; along the thickness direction of the transparent conductive layer, the height of the barrier is greater than the height of the seed layer;

[0010] An electrode is formed on a side of the seed layer away from the transparent conductive layer; wherein, along the thickness direction of the transparent conductive layer, the distance from the surface of the electrode away from the transparent conductive layer to the transparent conductive layer is greater than or equal to the distance from the surface of the barrier wall away from the transparent conductive layer to the transparent conductive layer;

[0011] Partition the transparent conductive layer of the connected part covered by different seed layers.

[0012] Optionally, forming a barrier wall on the transparent conductive layer includes:

[0013] Form a negative photoresist layer on the transparent conductive layer;

[0014] Expose and cure the negative photoresist layer from the side of the transparent substrate away from the negative photoresist layer, and etch the unexposed and uncured part of the negative photoresist layer to form a barrier wall.

[0015] Optionally, forming an electrode on a side of the seed layer away from the transparent conductive layer includes:

[0016] Form an electrode by electroplating on a side of the seed layer away from the transparent substrate.

[0017] Optionally, before forming the barrier wall, it further includes:

[0018] Judge the size of the distance between adjacent seed layers and a preset distance along the horizontal direction of the transparent substrate;

[0019] When the distance between adjacent seed layers is less than or equal to the preset distance, partition the transparent conductive layer covered by adjacent seed layers; wherein the partitioned transparent conductive layers are connected.

[0020] Optionally, partitioning the transparent conductive layer of the connected part covered by different seed layers includes:

[0021] Laser partition the unpartitioned connected part of the transparent conductive layer covered by different seed layers.

[0022] Optionally, laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers includes:

[0023] When the distance between adjacent seed layers is greater than the preset distance, laser partition the transparent conductive layer covered by the unpartitioned adjacent seed layers;

[0024] Laser partition the transparent conductive layer around the transparent conductive layer covered by the seed layer; wherein the partitioned transparent conductive layers are not connected.

[0025] Optionally, the material of the seed layer includes at least one of copper, molybdenum, gold, aluminum, nickel, titanium, silver and tantalum.

[0026] In a second aspect, an embodiment of the present invention further provides an LED substrate, which is prepared by using the manufacturing method of the LED substrate provided in any embodiment of the first aspect.

[0027] In a third aspect, an embodiment of the present invention further provides an LED display module, which includes an LED substrate prepared by using the manufacturing method of the LED substrate provided in any embodiment of the first aspect and at least one chip; the LED substrate includes at least a pair of electrodes;

[0028] The chip is flip-chip mounted on at least a pair of electrodes.

[0029] Optionally, the chip includes: a first pin and a second pin, and the first pin and the second pin are respectively connected to a pair of electrodes on the LED substrate.

[0030] The technical solution of this embodiment can facilitate the energization of the transparent conductive layer after forming the seed layer on the transparent conductive layer by forming the transparent conductive layer on the transparent substrate, so as to realize the energization of all the seed layers on the transparent conductive layer, thereby facilitating the subsequent formation of electrodes on the side of the seed layer far from the transparent conductive layer. In addition, the seed layer formed on the transparent conductive layer can be used as a mask for forming the barrier wall when forming the barrier wall through a certain process, ensuring that the formed barrier wall only covers the area of the transparent conductive layer not covered by the seed layer, so as to ensure that the seed layers are completely isolated by the barrier wall, further solidifying the shape of the electrodes formed on the seed layer, and realizing the growth of electrodes with a thickness greater than that of the barrier wall on the side of the seed layer far from the transparent substrate, so that the electrodes have the characteristics of low resistance and high conductivity. It can be seen that this solution realizes the global energization of the seed layer when forming the electrodes, ensuring that the LED substrate has the characteristic of low resistivity. When forming the barrier wall, the seed layer is used to replace the mask, making the formation accuracy of the barrier wall higher, thereby realizing the simplification of the manufacturing process of the LED substrate. Description of the Drawings

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some specific embodiments of the present invention. For those skilled in the art, according to the basic concepts of the device structure, driving method, and manufacturing method disclosed and prompted by various embodiments of the present invention, they can be extended and extended to other structures and drawings. Undoubtedly, these should be within the scope of the claims of the present invention.

[0032] Figure 1 It is a schematic flowchart of a manufacturing method of an LED substrate provided by an embodiment of the present invention;

[0033] Figure 2 It is a cross-sectional view of the LED substrate manufactured in step S110 provided by an embodiment of the present invention;

[0034] Figure 3 Top view of the LED substrate fabricated in step S110 provided by an embodiment of the present invention;

[0035] Figure 4 Cross-sectional view of the LED substrate fabricated in step S120 provided by an embodiment of the present invention;

[0036] Figure 5 Top view of the LED substrate fabricated in step S120 provided by an embodiment of the present invention;

[0037] Figure 6 Another cross-sectional view of the LED substrate fabricated in step S120 provided by an embodiment of the present invention;

[0038] Figure 7 Another top view of the LED substrate fabricated in step S120 provided by an embodiment of the present invention;

[0039] Figure 8 Cross-sectional view of the LED substrate fabricated in step S130 provided by an embodiment of the present invention;

[0040] Figure 9 Top view of the LED substrate fabricated in step S130 provided by an embodiment of the present invention;

[0041] Figure 10 Another cross-sectional view of the LED substrate fabricated in step S130 provided by an embodiment of the present invention;

[0042] Figure 11 Another top view of the LED substrate fabricated in step S130 provided by an embodiment of the present invention;

[0043] Figure 12 Cross-sectional view of the LED substrate fabricated in step S140 provided by an embodiment of the present invention;

[0044] Figure 13 Top view of the LED substrate fabricated in step S140 provided by an embodiment of the present invention;

[0045] Figure 14 Another cross-sectional view of the LED substrate fabricated in step S140 provided by an embodiment of the present invention;

[0046] Figure 15 Another top view of the LED substrate fabricated in step S140 provided by an embodiment of the present invention;

[0047] Figure 16 Cross-sectional view of the LED substrate fabricated in step S150 provided by an embodiment of the present invention;

[0048] Figure 17Top view of the LED substrate fabricated in step S150 provided by the embodiment of the present invention;

[0049] Figure 18 Another cross-sectional view of the LED substrate fabricated in step S150 provided by the embodiment of the present invention;

[0050] Figure 19 Another top view of the LED substrate fabricated in step S150 provided by the embodiment of the present invention;

[0051] Figure 20 Cross-sectional view of an LED substrate after forming a negative photoresist layer on a transparent conductive layer provided by the embodiment of the present invention;

[0052] Figure 21 Cross-sectional view of partitioning the transparent conductive layer covered by adjacent seed layers provided by the embodiment of the present invention;

[0053] Figure 22 Top view of partitioning the transparent conductive layer covered by adjacent seed layers provided by the embodiment of the present invention;

[0054] Figure 23 Cross-sectional view of laser partitioning the unpartitioned connected portions of the transparent conductive layer covered by different seed layers provided by the embodiment of the present invention;

[0055] Figure 24 Top view of laser partitioning the unpartitioned connected portions of the transparent conductive layer covered by different seed layers provided by the embodiment of the present invention;

[0056] Figure 25 Another cross-sectional view of laser partitioning the unpartitioned connected portions of the transparent conductive layer covered by different seed layers provided by the embodiment of the present invention;

[0057] Figure 26 Another top view of laser partitioning the unpartitioned connected portions of the transparent conductive layer covered by different seed layers provided by the embodiment of the present invention;

[0058] Figure 27 Cross-sectional view of an LED display module provided by the embodiment of the present invention;

[0059] Figure 28 Top view of an LED display module provided by the embodiment of the present invention;

[0060] Figure 29 Another cross-sectional view of an LED display module provided by the embodiment of the present invention;

[0061] Figure 30 Another top view of an LED display module provided by the embodiment of the present invention. Detailed implementation manners

[0062] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0063] Figure 1 The flowchart of a method for manufacturing an LED substrate provided by an embodiment of the present invention is shown in Figure 1 , and the method specifically includes the following steps:

[0064] S110. Form a transparent conductive layer on a transparent substrate.

[0065] Specifically, Figure 2 The sectional view of the LED substrate manufactured in step S110 provided by an embodiment of the present invention is shown in Figure 3 The top view of the LED substrate manufactured in step S110 provided by an embodiment of the present invention is shown in. As shown in Figure 2 and Figure 3 shown, the transparent substrate 010 is the bottom support plate of the LED substrate and has light transmittance. The material of the transparent substrate 010 can be glass, polyethylene terephthalate, polyethylene naphthalate or polyimide film. The transparent conductive layer 020 has light transmittance and conductivity. The materials used for the transparent conductive layer 020 include at least one of indium tin oxide, indium zinc oxide, tungsten-doped indium oxide, aluminum-doped zinc oxide, zinc gallium oxide, silver nanowires and carbon nanowires.

[0066] S120. Form a seed layer on the transparent conductive layer, and the seed layer partially covers the transparent conductive layer.

[0067] Specifically, Figure 4 The sectional view of the LED substrate manufactured in step S120 provided by an embodiment of the present invention is shown in Figure 5 The top view of the LED substrate manufactured in step S120 provided by an embodiment of the present invention is shown in. Figure 6 Another sectional view of the LED substrate manufactured in step S120 provided by an embodiment of the present invention is shown in Figure 7 Another top view of the LED substrate manufactured in step S120 provided by an embodiment of the present invention is shown in. As shown in Figures 4 - 7As shown, a patterned seed layer 030 is formed on the transparent conductive layer 020. After the seed layer 030 is formed on the transparent conductive layer 020, the seed layer 030 can be etched through a mask to pattern the seed layer 030, so that the seed layer 030 partially covers the transparent conductive layer 020. Among them, the patterned seed layer 030 has the same pattern as the pattern required for forming the LED substrate electrode, which can lay the foundation for generating the electrode subsequently and facilitate the formation of the electrode on the basis of the patterned seed layer 030. In addition, by forming the seed layer 030 on the transparent conductive layer 020, all the seed layers 030 can be energized simultaneously through the transparent conductive layer 020, so that the electroplating process can be carried out simultaneously on all the seed layers 030, greatly simplifying the difficulty of the electroplating process for the seed layer 030.

[0068] It should be noted that: Figure 4 and Figure 5 The distances between the seed layers 030 formed on the transparent conductive layer 020 are all in a relatively large distance situation. Figure 6 and Figure 7 The distances between the seed layers 030 formed on the transparent conductive layer 020 include two situations: relatively large distance and relatively small distance. Figure 4 ( Figure 5 ) and Figure 6 ( Figure 7 ) correspond to different patterns required for the LED substrate electrode (patterned seed layer 030). The above only exemplarily shows two LED substrate electrode design patterns. Designers need to design the LED substrate electrode design pattern according to the actual needs of the design, and the LED substrate electrode design pattern is not limited here.

[0069] S130. Form a retaining wall on the transparent conductive layer; wherein, the retaining wall partially covers the transparent conductive layer, surrounds the seed layer along the horizontal direction of the transparent conductive layer, and the height of the retaining wall is greater than the height of the seed layer along the thickness direction of the transparent conductive layer.

[0070] Specifically, Figure 8 is a cross-sectional view of the LED substrate fabricated in step S130 provided by the embodiment of the present invention. Figure 9 is a top view of the LED substrate fabricated in step S130 provided by the embodiment of the present invention. Figure 10 is another cross-sectional view of the LED substrate fabricated in step S130 provided by the embodiment of the present invention. Figure 11 is another top view of the LED substrate fabricated in step S130 provided by the embodiment of the present invention. As Figures 8 - 11As shown, the retaining wall 040 has insulation properties and is mainly used to isolate adjacent seed layers 030 to prevent electrical connection between adjacent seed layers 030. The retaining wall 040 formed on the transparent conductive layer 020 is formed by using the seed layer 030 as a mask, ensuring that the retaining wall 040 only covers the area of the transparent conductive layer 020 not covered by the seed layer 030, thereby ensuring that the seed layer 030 and the seed layer 030 are completely isolated by the retaining wall 040. Along the horizontal direction of the transparent conductive layer 020, the retaining wall 040 surrounds the seed layer 030, thereby ensuring that the seed layer 030 is within the range surrounded by the retaining wall 040 and preventing leakage of electricity when the seed layer 030 grows into an electrode subsequently. Along the thickness direction of the transparent conductive layer 020, the height of the retaining wall 040 is greater than the height of the seed layer 030, which facilitates solidifying the shape and growth direction of the electrode growing on the seed layer 030.

[0071] It should be noted that, by comparing Figure 8 and Figure 10 it can be seen that in Figure 8 , the distances between adjacent seed layers 030 are relatively large. In Figure 10 , there is a case where the distances between adjacent seed layers 030 are relatively small. For Figure 10 the relatively small distances between adjacent seed layers 030, before forming the retaining wall 040, the transparent conductive layer 020 at the location where the distances between adjacent seed layers 030 are relatively small can be pre-separated.

[0072] S140. Form an electrode on the side of the seed layer away from the transparent conductive layer; wherein, along the thickness direction of the transparent conductive layer, the distance from the surface of the electrode away from the transparent conductive layer to the transparent conductive layer is greater than or equal to the distance from the surface of the retaining wall away from the transparent conductive layer to the transparent conductive layer.

[0073] Specifically, Figure 12 is a cross-sectional view of the LED substrate manufactured by step S140 provided by an embodiment of the present invention, Figure 13 is a top view of the LED substrate manufactured by step S140 provided by an embodiment of the present invention, Figure 14 is another cross-sectional view of the LED substrate manufactured by step S140 provided by an embodiment of the present invention, Figure 15 is another top view of the LED substrate manufactured by step S140 provided by an embodiment of the present invention. As Figures 12 - 15As shown, the electrode 050 is used for conducting electricity and needs to have the characteristics of low resistance and high conductivity. The electrode 050 formed on the side of the seed layer 030 away from the transparent conductive layer 020 is formed by energizing the transparent conductive layer 020, causing all the seed layers 030 on the transparent conductive layer 020 to grow away from the transparent conductive layer 020 simultaneously to form the electrode 050. Among them, the electrode 050 formed by the growth of the seed layer 030 has a large thickness, enabling the electrode 050 to have the conductive characteristics of low resistance and high conductivity. Along the thickness direction of the transparent conductive layer 020, the distance from the surface of the electrode 050 away from the transparent conductive layer 020 to the transparent conductive layer 020 is greater than or equal to the distance from the surface of the barrier 040 away from the transparent conductive layer 020 to the transparent conductive layer 020, that is, the thickness of the electrode 050 should be greater than or equal to the thickness of the barrier 040, thereby ensuring that the surface of the electrode 050 away from the transparent conductive layer 020 can be exposed, facilitating the connection of the electrode 050 with other devices.

[0074] S150, the transparent conductive layer that separates the connected parts of the transparent conductive layer covered by different seed layers.

[0075] Specifically, Figure 16 It is a cross-sectional view of the LED substrate fabricated by step S150 provided in an embodiment of the present invention. Figure 17 It is a top view of the LED substrate fabricated by step S150 provided in an embodiment of the present invention. Figure 18 It is another cross-sectional view of the LED substrate fabricated by step S150 provided in an embodiment of the present invention. Figure 19 It is another top view of the LED substrate fabricated by step S150 provided in an embodiment of the present invention. Separating the transparent conductive layer 020 of the connected parts of the transparent conductive layer 020 covered by different seed layers 030 can achieve electrical isolation of the seed layers 030 covering the transparent conductive layer 020 through the separation of the transparent conductive layer 020.

[0076] In summary, in the method for manufacturing the LED substrate of the present solution, by forming a transparent conductive layer on the transparent substrate, it is convenient to energize the transparent conductive layer after forming the seed layer on the transparent conductive layer, so as to energize all the seed layers on the transparent conductive layer, thereby facilitating the subsequent formation of an electrode on the side of the seed layer away from the transparent conductive layer. In addition, the seed layer formed on the transparent conductive layer can be used as a mask for forming the barrier wall when forming the barrier wall through a certain process, ensuring that the formed barrier wall only covers the area of the transparent conductive layer not covered by the seed layer, so as to ensure that the seed layers are completely isolated by the barrier wall, further solidifying the shape of the electrode formed on the seed layer, and realizing the growth of an electrode with a thickness greater than that of the barrier wall on the side of the seed layer away from the transparent substrate, making the electrode have the characteristics of low resistance and high conductivity. It can be seen that the present solution realizes global energization of the seed layer when forming the electrode, ensuring that the LED substrate has the characteristic of low resistivity. When forming the barrier wall, the seed layer is used to replace the mask, making the formation accuracy of the barrier wall higher, thereby realizing the simplification of the manufacturing process of the LED substrate.

[0077] Optionally, forming a barrier wall on the transparent conductive layer includes:

[0078] Forming a negative photoresist layer on the transparent conductive layer.

[0079] Figure 20 FIG. is a cross-sectional view of an LED substrate after forming a negative photoresist layer on a transparent conductive layer 020 provided by an embodiment of the present invention. As Figure 20 shown, the negative photoresist layer covers the seed layer 030 and the transparent conductive layer 020 not covered by the seed layer 030. Among them, the negative photoresist used for forming the barrier wall has the characteristic of curing when irradiated by light. Specifically, typical materials that can be selected for the negative photoresist include SU8 photoresist, acrylic, dry film photoresist, etc.

[0080] Exposing and curing the negative photoresist layer from the side of the transparent substrate away from the negative photoresist layer, and etching the unexposed and uncured part of the negative photoresist layer to form a barrier wall.

[0081] Continue to refer to Figure 8 and Figure 20 , Figure 8 is a cross-sectional view of the LED substrate after photolithography to form a barrier wall 040 on Figure 20 . Utilizing the characteristics that the negative photoresist cures when irradiated by light, the light-transmitting characteristics of the transparent substrate 010, and the light-blocking characteristics of the seed layer 030, from Figure 20Light is irradiated on the side of the transparent substrate 010 away from the photoresist layer. At this time, the irradiated part of the negative photoresist layer is cured, that is, the cured negative photoresist layer will surround the seed layer 030 along the horizontal direction of the transparent conductive layer 020. The part of the negative photoresist that is not exposed and cured due to the shielding of the seed layer 030 is etched away with an etching solution, and then Figure 8 can be obtained. From the above process, it can be seen that the light-impermeability of the seed layer 030 acts as a mask plate during the photolithography process of the negative photoresist layer. Therefore, the photolithography mask is saved in the process of patterning the negative photoresist layer to form the barrier wall 040, and through the photolithography exposure of the negative photoresist by the seed layer 030, "self-alignment" is achieved, the accuracy of photolithography is improved, and the line width loss is greatly reduced.

[0082] Optionally, an electrode is formed on the side of the seed layer away from the transparent conductive layer, including:

[0083] The electrode is formed by electroplating on the side of the seed layer away from the transparent substrate.

[0084] Continue to refer to Figure 12 , by applying electricity to the transparent conductive layer 020, the electroplating process can be used to electroplate the seed layer 030 formed on the transparent conductive layer 020, so that the seed layer 030 grows to form the electrode 050. For the seed layer 030, electroplating processes can be used to electroplate electroplatable metals such as copper, nickel, gold, and chromium to form the electrode 050.

[0085] Optionally, before forming the barrier wall, it further includes:

[0086] Along the horizontal direction of the transparent substrate, judge the size relationship between the distance between adjacent seed layers and a preset distance.

[0087] Among them, the transparent conductive layer covered by adjacent seed layers needs to be partitioned. Therefore, the size relationship between the distance between adjacent seed layers and the preset distance is directly related to the process selection for partitioning the transparent conductive layer covered by adjacent seed layers. If the distance between adjacent seed layers is less than or equal to the preset distance, the transparent conductive layer covered by adjacent seed layers needs to be partitioned by photolithography. If the distance between adjacent seed layers is greater than the preset distance, the transparent conductive layer covered by adjacent seed layers needs to be partitioned by laser ablation. The preset distance is determined according to the laser spot size. Exemplarily, if the laser spot is 20um - 100um, the preset distance can be set to 30um. In summary, by judging the size relationship between the distance between adjacent seed layers and the preset distance and selecting different processes for partitioning the transparent conductive layer, the partitioning accuracy of the transparent conductive layer covered by small-spacing seed layers is improved, and the partitioning process of the transparent conductive layer covered by large-spacing seed layers is simplified.

[0088] When the distance between adjacent seed layers is less than or equal to a preset distance, the transparent conductive layer covered by the adjacent seed layers is partitioned; the partitioned transparent conductive layer is connected.

[0089] Figure 21 This is a sectional view of a transparent conductive layer covered by adjacent seed layers partitioned according to an embodiment of the present invention. Figure 22 This is a top view of a transparent conductive layer covered by adjacent seed layers partitioned according to an embodiment of the present invention. As Figure 21 and Figure 22 shown, when the distance L1 between adjacent seed layers 030 is less than the preset distance, the transparent conductive layer 020 between the adjacent seed layers 030 at the distance L1 is partitioned by a photolithography process.

[0090] Optionally, partitioning the transparent conductive layer of the connected part covered by different seed layers includes:

[0091] Laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers.

[0092] Figure 23 This is a sectional view of laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers according to an embodiment of the present invention. Figure 24 This is a top view of laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers according to an embodiment of the present invention. Figure 25 This is another sectional view of laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers according to an embodiment of the present invention. Figure 26 This is another top view of laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers according to an embodiment of the present invention.

[0093] Specifically, laser partitioning the unpartitioned connected part of the transparent conductive layer 020 covered by different seed layers 030 includes: when the distance between adjacent seed layers 030 is greater than the preset distance, laser partitioning the transparent conductive layer 020 covered by the unpartitioned adjacent seed layers 030; laser partitioning the transparent conductive layer 020 around the transparent conductive layer 020 covered by the seed layer 030; the partitioned transparent conductive layer 020 is not connected.

[0094] Among them, if the distance between adjacent seed layers 030 is greater than a preset distance, it is necessary to cut off the transparent conductive layer 020 covered by the adjacent seed layers 030 by laser ablation. Among them, the laser can be incident from the side of the transparent substrate 010 away from the seed layer 030 or from the side of the retaining wall 040 away from the transparent conductive layer 020, and ablate the transparent conductive layer 020 between the transparent conductive layers 020 covered by the adjacent seed layers 030, so as to cut off the transparent conductive layer 020 covered by the adjacent seed layers 030. Laser ablation of the transparent conductive layer 020 around the transparent conductive layer 020 covered by the seed layer 030 can prevent the transparent conductive layers 020 covered by different seed layers 030 (electrodes 050) from being connected, ensuring that the transparent conductive layers 020 covered by different seed layers 030 are cut off, thereby achieving electrical isolation between different seed layers 030 (electrodes 050).

[0095] Optionally, the material of the seed layer includes at least one of copper, molybdenum, gold, aluminum, nickel, titanium, silver, and tantalum.

[0096] Among them, the material of the seed layer includes copper, molybdenum, aluminum, gold, nickel, titanium, silver, tantalum, or a laminated structure of these materials. Among them, the preferred laminated structure of the laminated structure of the seed layer is a molybdenum-aluminum-molybdenum three-layer laminated structure composed of molybdenum and aluminum. Using a laminated structure for the seed layer can reduce the resistivity of the seed layer and improve the conductive efficiency of the seed layer.

[0097] The embodiment of the present invention also provides an LED substrate, which is prepared by using the manufacturing method of the LED substrate in any one of the above embodiments.

[0098] Specifically, the LED substrate includes a transparent substrate, a transparent conductive layer, a seed layer, a retaining wall, and an electrode. The transparent conductive layer is disposed on the transparent substrate. The seed layer is disposed on the transparent conductive layer and partially covers the transparent conductive layer.

[0099] The retaining wall is disposed on the transparent conductive layer and partially covers the transparent conductive layer. Along the horizontal direction of the transparent conductive layer, the retaining wall surrounds the seed layer; along the thickness direction of the transparent conductive layer, the height of the retaining wall is greater than the height of the seed layer. The electrode is disposed on the side of the seed layer away from the transparent conductive layer. Along the thickness direction of the transparent conductive layer, the distance from the surface of the electrode away from the transparent conductive layer to the transparent conductive layer is greater than or equal to the distance from the surface of the retaining wall away from the transparent conductive layer to the transparent conductive layer.

[0100] The LED substrate is prepared by the manufacturing method of the LED substrate provided by any embodiment of the present invention, and thus has the beneficial effects of the manufacturing method of the LED substrate provided by the embodiment of the present invention, which will not be elaborated here.

[0101] An embodiment of the present invention further provides an LED display module, characterized in that it uses an LED substrate prepared by the method for manufacturing an LED substrate in any one of the above embodiments and at least one chip; the LED substrate includes at least a pair of electrodes; the chip is flip-chip mounted on at least a pair of electrodes.

[0102] Figure 27 It is a sectional view of an LED display module provided by an embodiment of the present invention. Figure 28 It is a top view of an LED display module provided by an embodiment of the present invention. Figure 29 It is a sectional view of another LED display module provided by an embodiment of the present invention. Figure 30 It is a top view of another LED display module provided by an embodiment of the present invention. As Figures 27 - 30 shown, the LED display module is composed of an LED substrate and at least one chip 060, wherein the LED substrate includes at least a pair of electrodes, such as electrode 051 and electrode 052. The chip 060 is connected to the LED substrate. Specifically, the chip 060 is bonded to a pair of electrodes on the LED substrate by a bonding process.

[0103] Continue to refer to Figures 27 - 30 , optionally, the chip includes: a first pin 061 and a second pin 062, and the first pin 061 and the second pin 062 are respectively connected to a pair of electrodes on the LED substrate.

[0104] Specifically, electrode 051 and electrode 052 are a pair of electrodes on the LED substrate, the first pin 061 is connected to electrode 051, and the first pin 062 is connected to electrode 052.

[0105] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A manufacturing method of an LED substrate, characterized in that Comprising: Forming a transparent conductive layer on a transparent substrate; Forming a seed layer on the transparent conductive layer, the seed layer partially covering the transparent conductive layer; Forming a barrier wall on the transparent conductive layer; wherein, the barrier wall partially covers the transparent conductive layer, along the horizontal direction of the transparent conductive layer, the barrier wall surrounds the seed layer; along the thickness direction of the transparent conductive layer, the height of the barrier wall is greater than the height of the seed layer; Forming an electrode on the side of the seed layer away from the transparent conductive layer; wherein, along the thickness direction of the transparent conductive layer, the distance from the surface of the electrode away from the transparent conductive layer to the transparent conductive layer is greater than or equal to the distance from the surface of the barrier wall away from the transparent conductive layer to the transparent conductive layer; Partitioning the transparent conductive layer at the connected part of the transparent conductive layer covered by different seed layers; Forming a barrier wall on the transparent conductive layer, including: Forming a negative photoresist layer on the transparent conductive layer; Using the seed layer as a mask to expose and cure the negative photoresist layer from the side of the transparent substrate away from the negative photoresist layer, and etching the unexposed and uncured part of the negative photoresist layer to form the barrier wall; Forming an electrode on the side of the seed layer away from the transparent conductive layer, including: Applying electricity to the transparent conductive layer to realize applying electricity to all the seed layers on the transparent conductive layer, and electroplating to form the electrode on the side of the seed layer away from the transparent substrate.

2. The manufacturing method of the LED substrate according to claim 1, wherein Before forming the barrier wall, it further includes: Along the horizontal direction of the transparent substrate, judging the size of the distance between adjacent seed layers and a preset distance; When the distance between adjacent seed layers is less than or equal to the preset distance, partitioning the transparent conductive layer covered by adjacent seed layers; wherein the partitioned transparent conductive layer is connected.

3. The manufacturing method of the LED substrate according to claim 2, wherein, Partitioning the transparent conductive layer at the connected part of the transparent conductive layer covered by different seed layers, including: Laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers.

4. The manufacturing method of the LED substrate according to claim 3, characterized in that, Laser partitioning the unpartitioned connected part of the transparent conductive layer covered by different seed layers, including: When the distance between adjacent seed layers is greater than the preset distance, laser partitioning the transparent conductive layer covered by adjacent unpartitioned seed layers; Laser partitioning the transparent conductive layer around the transparent conductive layer covered by the seed layer; wherein the partitioned transparent conductive layer is not connected.

5. The manufacturing method of the LED substrate according to claim 1, characterized in that, The material of the seed layer includes at least one of copper, molybdenum, gold, aluminum, nickel, titanium, silver and tantalum.

6. An LED substrate, characterized in that, Prepared by using the manufacturing method of the LED substrate according to any one of claims 1 - 5.

7. An LED display module, characterized in that, Including an LED substrate prepared by using the manufacturing method of the LED substrate according to any one of claims 1 - 5 and at least one chip; the LED substrate includes at least a pair of electrodes; The chip is flip - mounted on at least a pair of the electrodes.

8. The LED display module according to claim 7, wherein, The chip includes: a first pin and a second pin, and the first pin and the second pin are respectively connected to a pair of the electrodes on the LED substrate.

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