Display device

Abstract

A display device according to an embodiment of the present invention includes: a substrate; a first electrode and a second electrode, which are spaced apart from each other along a first direction on the substrate; a light-emitting element, which is arranged between the first electrode and the second electrode; a blocking structure, which is provided on the substrate and includes a first surface, a second surface and a third surface; a light conversion layer, which is arranged on the blocking structure; and a passivation layer, which is arranged on the light conversion layer, wherein a first space defined by the second surface and the third surface is formed between the substrate and the blocking structure, and a second space defined by the first surface and the second surface is formed between the blocking structure and the passivation layer, the first space and the second space alternate with each other along the first direction, the light-emitting element is arranged inside the first space, and the light conversion layer is arranged inside at least one of the second spaces.

Description

Technical Field

[0001] The present invention relates to a display device, and, for example, to a display device including a light emitting element. Background Art

[0002] Display devices can use light-emitting elements such as light-emitting diodes as light sources for pixels to display images. Even under harsh environmental conditions, light-emitting diodes can maintain relatively suitable or satisfactory durability and are excellent in lifespan and brightness.

[0003] Recently, research has become more active into technologies for manufacturing light-emitting diodes using materials having a highly reliable inorganic crystal structure and utilizing them in panels of light-emitting display devices as next-generation pixel light sources. As part of this research, development of light-emitting display devices is underway that use light-emitting diodes manufactured in small sizes corresponding to the micrometer or nanometer scale as the light source for each pixel. Summary of the Invention

[0004] Technical issues

[0005] An object of the present invention is to provide a display device capable of improving the efficiency with which light emitted from a light emitting element is incident on a light conversion layer.

[0006] The objects of the present invention are not limited to the objects stated above, and those skilled in the art will clearly understand other technical objects from the following description.

[0007] Technical Solution

[0008] Embodiments of the present invention may provide a display device comprising: a substrate; a first electrode and a second electrode disposed on the substrate at positions spaced apart from each other along a first direction; a light-emitting element disposed between the first electrode and the second electrode; a blocking structure disposed on the substrate and including a first surface, a second surface, and a third surface; a light-conversion layer disposed on the blocking structure; and a passivation layer disposed on the light-conversion layer. A first space defined by the second surface and the third surface may be formed between the substrate and the blocking structure. A second space defined by the first surface and the second surface may be formed between the blocking structure and the passivation layer. The first space and the second space may be positioned alternately in the first direction. The light-emitting element may be disposed in the first space. The light-conversion layer may be disposed in at least one of the second spaces.

[0009] In an embodiment, the third surface may have a hole overlapping the light emitting element.

[0010] In an embodiment, the display device may further include: a color filter disposed on the light conversion layer.

[0011] In an embodiment, the light conversion layer may include a matrix resin and wavelength conversion particles dispersed in the matrix resin.

[0012] In an embodiment, the light conversion layer may further include light scattering particles dispersed in the matrix resin.

[0013] In an embodiment, the first surface may be closer to the substrate than the third surface, and the first surface and the third surface may be alternately arranged in the first direction.

[0014] In an embodiment, the second surface may be disposed between the first surface and the third surface and couple the first surface with the third surface.

[0015] In an embodiment, the first space may be sealed by the substrate, the barrier structure, and the passivation layer, and filled with air.

[0016] In an embodiment, the display device may further include: an anchor pattern disposed in the first space, and the light emitting element may be fixed between the substrate and the anchor pattern.

[0017] In an embodiment, the display device may further include: a light shielding pattern positioned along the second surface in the second space where the light conversion layer is not included. The light shielding pattern may include metal.

[0018] In an embodiment, the display device may further include: a black matrix filled in the second space not including the light conversion layer, and the black matrix may be configured to absorb and block incident light.

[0019] Embodiments of the present invention may provide a display device comprising: a substrate; a first electrode and a second electrode disposed on the substrate at positions spaced apart from each other along a first direction; a light-emitting element disposed between the first electrode and the second electrode; a light-conversion layer disposed on the substrate; and a blocking structure disposed on the substrate and including a first surface, a second surface, and a third surface. A first space defined by the second surface and the third surface may be formed between the substrate and the blocking structure. A second space defined by the first surface and the second surface may be formed in the blocking structure. The first space and the second space may be positioned alternately in the first direction. The light-conversion layer may be disposed in the first space. The light-emitting element may be disposed in at least one of the second spaces.

[0020] In an embodiment, the first surface may expose at least a portion of the first electrode and at least a portion of the second electrode, and have a first hole overlapping the light emitting element.

[0021] In an embodiment, the third surface may have a second hole overlapping the light conversion layer.

[0022] In an embodiment, the display device may further include: a passivation layer disposed on the blocking structure; and a color filter disposed on the passivation layer.

[0023] In an embodiment, the light conversion layer may include a matrix resin, wavelength conversion particles dispersed in the matrix resin, and light scattering particles dispersed in the matrix resin.

[0024] In an embodiment, the first surface may be disposed closer to the substrate than the third surface, and the first surface and the third surface may be alternately arranged in the first direction.

[0025] In an embodiment, the second surface may be disposed between the first surface and the third surface and couple the first surface with the third surface.

[0026] In an embodiment, the display device may further include: a light shielding pattern positioned along the second surface in the second space where the light emitting element is not included. The light shielding pattern may include metal.

[0027] In an embodiment, the display device may further include: a black matrix overlapping the second space in which the light emitting element is not disposed on the blocking structure. The black matrix may be configured to absorb and block incident light.

[0028] Details of various embodiments are included in the detailed description and accompanying drawings.

[0029] Effects of the Invention

[0030] In various embodiments of the present invention, the light conversion layer may be disposed at the same height as the light emitting element via a blocking structure, thereby improving the efficiency of light emitted from the light emitting element incident on the light conversion layer.

[0031] The effects according to the embodiments of the present invention are not limited to the foregoing, and include other various effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1a and Figure 1b is a perspective view showing a light emitting element according to an embodiment of the present invention.

[0033] Figure 2 is a plan view schematically showing a display device according to an embodiment of the present invention.

[0034] Figure 3a and Figure 3b are circuit diagrams each showing a pixel according to an embodiment of the present invention.

[0035] Figure 4 is a circuit diagram illustrating a pixel according to an embodiment of the present invention.

[0036] Figure 5is a plan view showing a pixel unit according to an embodiment of the present invention.

[0037] Figure 6 It is shown along Figure 5 A schematic cross-sectional view of a pixel unit according to an embodiment taken along line AA′.

[0038] Figures 7 to 9 is with Figure 5 The line AA′ corresponds to a cross-sectional view of a pixel unit according to various embodiments.

[0039] Figure 10 is a plan view showing a pixel unit according to an embodiment of the present invention.

[0040] Figure 11 It is shown along Figure 10 A schematic cross-sectional view of a pixel unit according to an embodiment taken along line BB′.

[0041] Figure 12 and Figure 13 is with Figure 10 The line BB′ corresponds to a cross-sectional view of a pixel unit according to various embodiments. DETAILED DESCRIPTION

[0042] The advantages and features of the present invention and methods for achieving the same will become apparent with reference to the embodiments described in detail later in conjunction with the accompanying drawings. However, the present invention may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will be limited only by the appended claims.

[0043] It will be understood that when an element or layer is referred to as being “on” another element or layer, it can be directly on, directly connected to or coupled to the other element or layer, or one or more intervening elements or layers may be present. Like reference numerals refer to like elements throughout.

[0044] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the present invention. In the present invention, unless the context clearly indicates otherwise, the singular form is intended to include the plural form.

[0045] Some elements not directly related to the features of the present invention in the drawings may be omitted to clearly illustrate the present invention. In addition, the sizes, proportions, etc. of some elements in the drawings may be slightly exaggerated. It should be noted that throughout the drawings, the same reference numerals are used to represent the same or similar elements, and repeated descriptions will be omitted.

[0046] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0047] Figure 1a and Figure 1b is a perspective view showing a light emitting element LD according to an embodiment of the present invention.

[0048] Reference Figure 1a and Figure 1b The light emitting element LD according to an embodiment of the present invention may include a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12 disposed between the first semiconductor layer 11 and the second semiconductor layer 13. For example, the light emitting element LD may be implemented as a stacked body formed by sequentially stacking the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13.

[0049] In an embodiment of the present invention, the light emitting element LD may be provided in the form of a rod extending in one direction. If the direction in which the light emitting element LD extends is defined as a longitudinal direction, the light emitting element LD may have a first end EP1 relative to the longitudinal direction (see Figure 5 ) and the second end EP2 (see Figure 5 ).

[0050] In an embodiment, one of the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed on the first end EP1, and the other of the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed on the second end EP2. For example, the first semiconductor layer 11 may be disposed on the first end EP1, and the second semiconductor layer 13 may be disposed on the second end EP2.

[0051] In an embodiment of the present invention, the light-emitting element LD may be provided in the form of a rod. Here, the term "rod-type" includes rod-like shapes and strip-like shapes, such as cylindrical shapes and prismatic shapes extending in the longitudinal direction (for example, having an aspect ratio greater than 1). For example, the length of the light-emitting element LD may be greater than its diameter. However, the present invention is not limited thereto. For example, the light-emitting element LD may be a light-emitting element having a core-shell structure.

[0052] The light-emitting element LD can be manufactured with a small size having a diameter and / or length corresponding to, for example, micrometer- or nanometer-scale dimensions. For example, the diameter of the light-emitting element LD can be equal to or less than 600 nm, and the length of the light-emitting element LD can be equal to or less than 4 μm. However, the size of the light-emitting element LD is not limited thereto. For example, the size of the light-emitting element LD can be varied to meet the requirements of the display device to which the light-emitting element LD is applied.

[0053] The first semiconductor layer 11 may include, for example, at least one n-type semiconductor layer. For example, the first semiconductor layer 11 may include a semiconductor layer including any one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN semiconductor materials, and doped with a first dopant such as Si, Ge, or Sn.

[0054] The material forming the first semiconductor layer 11 is not limited thereto, and the first semiconductor layer 11 may be formed of various other materials.

[0055] The active layer 12 may be formed on the first semiconductor layer 11 and have a single quantum well structure or a multi-quantum well structure. The active layer 12 may emit light having a wavelength in a range from 400 nm to 900 nm and use a double heterostructure. In an embodiment of the present invention, a capping layer (not shown) doped with a dopant may be formed on and / or below the active layer 12. For example, the capping layer may be formed of an AlGaN layer or an InAlGaN layer. In an embodiment, a material such as AlGaN or AlInGaN may also be used to form the active layer 12, and various other materials may be used to form the active layer 12.

[0056] If an electric field having a predetermined voltage or more is applied to opposite ends of the light-emitting element LD, the light-emitting element LD emits light by recombination of electron-hole pairs in the active layer 12. Since the light emission of the light-emitting element LD can be controlled based on the aforementioned principle, the light-emitting element LD can be used as a light source for pixels of various light-emitting devices and display devices.

[0057] The second semiconductor layer 13 may be provided on the active layer 12 and include a semiconductor layer of a different type (or kind) from the type (or kind) of the first semiconductor layer 11. For example, the second semiconductor layer 13 may include at least one p-type semiconductor layer. For example, the second semiconductor layer 13 may include a semiconductor layer including any one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN semiconductor materials, and doped with a second dopant such as Mg. The material forming the second semiconductor layer 13 is not limited thereto, and the second semiconductor layer 13 may be formed of various other materials.

[0058] In an embodiment of the present invention, the light emitting element LD may include not only a first semiconductor layer 11, an active layer 12 and a second semiconductor layer 13, but may also include a fluorescent layer, another active layer, another semiconductor layer and / or an electrode layer arranged on and / or below each layer.

[0059] In an embodiment, the light emitting element LD may further include at least one electrode layer provided on one side (eg, upper surface) of the second semiconductor layer 13 or one side (eg, lower surface) of the first semiconductor layer 11. Figure 1b As shown in , the light emitting element LD may further include an electrode layer 15 provided on one side of the second semiconductor layer 13. The electrode layer 15 may be an ohmic contact electrode, but is not limited thereto. In addition, the electrode layer 15 may include a metal or a metal oxide. For example, chromium (Cr), titanium (Ti), aluminum (Al), gold (Au), nickel (Ni), and oxides or alloys thereof, ITO may be used alone or in combination with one another. However, the present invention is not limited thereto. In an embodiment, the electrode layer 15 may be substantially transparent or translucent. Thus, the light generated from the light emitting element LD may be emitted to the outside after passing through the electrode layer 15.

[0060] The light emitting element LD may further include an insulating film 14. However, in an embodiment of the present invention, the insulating film 14 may be omitted, or the insulating film 14 may be provided to cover only some of the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13. For example, the insulating film 14 may be provided on a portion of the light emitting element LD except for the opposite ends thereof, so that the opposite ends of the light emitting element LD are exposed.

[0061] For illustrative purposes, Figure 1a and Figure 1b The insulating film 14 is shown with a portion thereof removed. The entire side surface of the light emitting element LD may be surrounded by the insulating film 14 .

[0062] In an embodiment of the present invention, the insulating film 14 may include a transparent insulating material. For example, the insulating film 14 may include at least one or more insulating materials selected from SiO2, Si3N4, Al2O3, and TiO2, but is not limited thereto. In other words, various materials having insulating properties may be used.

[0063] The insulating film 14 can prevent the active layer 12 from shorting due to electrical contact with conductive materials other than the first semiconductor layer 11 and the second semiconductor layer 13, or reduce the possibility or occurrence of such a short circuit. Due to the insulating film 14, the occurrence of defects on the surface of the light-emitting element LD can be minimized or reduced, thereby improving the lifespan and efficiency of the light-emitting element LD. When multiple light-emitting elements LD are arranged in close contact with each other, the insulating film 14 can prevent the occurrence of undesirable short circuits between the light-emitting elements LD or reduce the possibility or occurrence of such short circuits.

[0064] The type, structure, shape, etc. of the light emitting element LD according to the embodiment of the present invention may be changed in various ways.

[0065] Figure 2 is a plan view schematically showing a display device 1000 according to an embodiment of the present invention.

[0066] Reference Figures 1a to 2 The display device 1000 may include a substrate SUB and a plurality of pixels PXL disposed on the substrate SUB. In detail, the display device 1000 may include a display area DA configured to display an image and a non-display area NDA formed in a predetermined area other than the display area DA.

[0067] The display area DA may be a region in which the pixels PXL are disposed. The non-display area NDA may be a region in which a driver for driving the pixels PXL and various lines (not shown) for coupling the pixels PXL to the driver are disposed.

[0068] The display area DA may have various shapes. For example, the display area DA may be provided in various forms, such as a closed polygon including sides formed by straight lines, a circle or an ellipse including sides formed by curved lines, or a semicircle or a semiellipse including sides formed by straight lines and curved lines.

[0069] When the display area DA includes a plurality of regions, each region may be provided in various forms such as a closed polygon including straight lines, and a semicircle, a semi-ellipse including curved lines. The surface areas of the plurality of regions may be the same as or different from each other.

[0070] In the embodiment of the present invention, an example in which the display area DA is provided with a single area having a rectangular shape including straight line sides will be described.

[0071] The non-display area NDA may be provided on at least one side of the display area DA. In an embodiment of the present invention, the non-display area NDA may surround the display area DA.

[0072] The pixels PXL may be disposed in the display area DA on the substrate SUB. Each of the pixels PXL may include at least one light emitting element LD configured to be driven in response to a corresponding scan signal and a corresponding data signal.

[0073] Each pixel PXL may include a light-emitting element that emits white light and / or colored light. Each pixel PXL may emit light having any one of red, green, and blue colors, but is not limited thereto. For example, each pixel PXL may emit light having any one of cyan, magenta, yellow, and white colors.

[0074] In detail, the pixel PXL may include a first pixel PXL1 configured to emit light having a first color, a second pixel PXL2 configured to emit light having a second color different from the first color, and a third pixel PXL3 configured to emit light having a third color different from the first color or the second color. At least one first pixel PXL1, at least one second pixel PXL2, and at least one third pixel PXL3 disposed adjacent to each other may form one pixel unit PXU that may emit light having various colors.

[0075] In an embodiment, the first pixel PXL1 may be a red pixel that emits red light, the second pixel PXL2 may be a green pixel that emits green light, and the third pixel PXL3 may be a blue pixel that emits blue light. In an embodiment, the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may include a light-emitting element associated with a first color, a light-emitting element associated with a second color, and a light-emitting element associated with a third color as light sources, so that the pixels can respectively emit light having a first color, light having a second color, and light having a third color. In an embodiment, the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may respectively include light-emitting elements having the same (or substantially the same) color, and light conversion layers having different colors are provided on the corresponding light-emitting elements, so that the pixels can respectively emit light having a first color, light having a second color, and light having a third color.

[0076] However, the color, type, and / or number of the pixels PXL forming each pixel unit PXU are not particularly limited.

[0077] The pixels PXL may be arranged in a matrix having rows and columns extending in a first direction DR1 and a second direction DR2 crossing the first direction DR1. However, the arrangement of the pixels PXL is not limited to a specific arrangement. In other words, the pixels PXL may be arranged in various forms.

[0078] The driver may provide a signal to the pixel PXL through a line (not shown), thereby controlling the operation of the pixel PXL. Figure 2 In the figure, lines (not shown) are omitted for illustration purposes.

[0079] The driver may include a scan driver SDV configured to provide a scan signal to the pixel PXL via a scan line, an emission driver EDV configured to provide an emission control signal to the pixel PXL via an emission control line, a data driver DDV configured to provide a data signal to the pixel PXL via a data line, and a timing controller (not shown). The timing controller may control the scan driver SDV, the emission driver EDV, and the data driver DDV.

[0080] In an embodiment, each of the pixels PXL may be formed of an active pixel. However, the type, structure, and / or driving method of the pixel PXL applicable to the present invention are not particularly limited.

[0081] Figure 3a and 3b are circuit diagrams each showing a pixel according to an embodiment of the present invention. For example, Figure 3a and Figure 3b An example of forming pixels of an active emissive display panel is shown.

[0082] Reference Figure 3a , each of the pixels PXL may include at least one light emitting element LD and a pixel driving circuit (or drive circuit) DC coupled to the light emitting element LD and configured to drive the light emitting element LD.

[0083] A first electrode (eg, an anode electrode) of the light emitting element LD may be coupled to a first driving power source VDD via the pixel driving circuit DC, and a second electrode (eg, a cathode electrode) of the light emitting element LD may be coupled to a second driving power source VSS.

[0084] The first driving power source VDD and the second driving power source VSS may have different potentials. For example, the second driving power source VSS may have a potential lower than that of the first driving power source VDD by a value equal to or greater than the threshold voltage of the light emitting element LD.

[0085] The light emitting element LD can emit light with luminance corresponding to the driving current controlled by the pixel driving circuit DC.

[0086] although Figure 3a An embodiment is shown in which each of the pixels PXL includes only one light emitting element LD, but the present invention is not limited thereto. For example, each of the pixels PXL may include a plurality of light emitting elements coupled in parallel and / or in series.

[0087] In an embodiment of the present invention, the pixel driving circuit DC may include a first transistor M1, a second transistor M2 and a storage capacitor Cst. The structure of the pixel driving circuit DC is not limited to Figure 3a The structure of the pixel driving circuit DC of the embodiment shown in FIG. In an embodiment, each of the pixels PXL may further include a pixel sensing circuit (not shown). The pixel sensing circuit may measure the driving current value of each of the pixels PXL and transmit the driving current value to an external circuit (e.g., a timing controller) so that the pixels PXL can be compensated.

[0088] The first transistor (switching transistor) M1 may include a first electrode coupled to the data line DL and a second electrode coupled to the first node N1. Here, the first electrode and the second electrode of the first transistor M1 may be different electrodes. For example, if the first electrode is a source electrode, the second electrode is a drain electrode. The gate electrode of the first transistor M1 may be coupled to the scan line SL.

[0089] When a scan signal having a voltage (e.g., a gate-on voltage) capable of turning on the first transistor M1 is supplied from the scan line SL, the first transistor M1 is turned on to electrically couple the data line DL to the first node N1. Here, by supplying a data signal of a corresponding frame to the data line DL, the data signal can be transmitted to the first node N1. The data signal transmitted to the first node N1 can be stored in the storage capacitor Cst.

[0090] The second transistor (driving transistor) M2 may include a first electrode coupled to a first driving power source VDD and a second electrode electrically coupled to a first electrode (e.g., an anode electrode) of the light-emitting element LD. The gate electrode of the second transistor M2 may be coupled to the first node N1. As such, the second transistor M2 may control the amount of driving current supplied to the light-emitting element LD in response to the voltage of the first node N1.

[0091] The storage capacitor Cst may include a first electrode coupled to the first driving power source VDD and a second electrode coupled to the first node N1. The storage capacitor Cst may be charged with a voltage corresponding to the data signal supplied to the first node N1 and maintain the charged voltage until a data signal of a subsequent frame is supplied.

[0092] For illustrative purposes, Figure 3a A driving circuit DC having a relatively simple structure is shown, which includes a first transistor M1 configured to transmit a data signal to the pixel PXL, a storage capacitor Cst configured to store the data signal, and a second transistor M2 configured to supply a driving current corresponding to the data signal to the light emitting element LD.

[0093] However, the present invention is not limited thereto, and the structure of the driving circuit DC may be modified in various ways. For example, the driving circuit DC may further include at least one transistor (such as a transistor configured to compensate for the threshold voltage of the second transistor M2, a transistor configured to initialize the first node N1, and / or a transistor configured to control the emission time of the light-emitting element LD) or other circuit elements (such as a boosting capacitor for boosting the voltage of the first node N1).

[0094] In addition, despite Figure 3a In the embodiment of the present invention, the transistors (e.g., the first transistor M1 and the second transistor M2) included in the driving circuit DC have been shown to be formed of P-type transistors, but the present invention is not limited thereto. In other words, at least one of the first transistor M1 and the second transistor M2 included in the driving circuit DC may be changed to an N-type transistor.

[0095] For example, refer to Figure 3b , each of the first transistor M1 and the second transistor M2 of the driving circuit DC can be formed by an N-type transistor. In addition to the change in the connection position of some components due to the change in the transistor type, Figure 3b The structure and operation of the driving circuit DC shown in Figure 3a The structure and operation of the driving circuit DC are similar. Therefore, detailed description thereof will be omitted.

[0096] Figure 4 is a circuit diagram illustrating a pixel according to an embodiment of the present invention.

[0097] Reference Figure 4 , each of the pixels PXL according to an embodiment of the present invention may include a light emitting element LD, first, second, third, fourth, fifth, sixth, and seventh transistors T1, T2, T3, T4, T5, T6, and T7, and a storage capacitor Cst.

[0098] A first electrode (e.g., an anode electrode) of the light emitting element LD may be coupled to the first transistor T1 via the sixth transistor T6. A second electrode (e.g., a cathode electrode) of the light emitting element LD may be coupled to the second driving power source VSS. The light emitting element LD may emit light having a predetermined brightness corresponding to the current supplied from the first transistor T1.

[0099] The first transistor (driving transistor) T1 may include a first electrode coupled to the first driving power source VDD via a fifth transistor T5 and a second electrode coupled to the first electrode of the light-emitting element LD via a sixth transistor T6. The first transistor T1 may control a current flowing from the first driving power source VDD to the second driving power source VSS via the light-emitting element LD in response to a voltage of a first node N1 as a gate electrode thereof.

[0100] The second transistor (switching transistor) T2 may be coupled between the data line DL and the first electrode of the first transistor T1. The gate electrode of the second transistor T2 may be coupled to the scan line SL. When a scan signal having a gate-on voltage is supplied to the scan line SL, the second transistor T2 may be turned on, so that the data line DL may be electrically coupled to the first electrode of the first transistor T1.

[0101] The third transistor T3 may be coupled between the second electrode of the first transistor T1 and the first node N1. A gate electrode of the third transistor T3 may be coupled to the scan line SL. When a scan signal having a gate-on voltage is supplied to the scan line SL, the third transistor T3 may be turned on, so that the second electrode of the first transistor T1 may be electrically coupled to the first node N1.

[0102] The fourth transistor T4 may be coupled between the first node N1 and the initialization power supply Vint. The gate electrode of the fourth transistor T4 may be coupled to the scan line SL-1 of the previous stage. When a scan signal having a gate-on voltage is supplied to the scan line SL-1 of the previous stage, the fourth transistor T4 is turned on, so that the voltage of the initialization power supply Vint can be supplied to the first node N1. The initialization power supply Vint may be set to a voltage lower than the voltage of the data signal.

[0103] The fifth transistor T5 may be coupled between the first driving power source VDD and the first electrode of the first transistor T1. A gate electrode of the fifth transistor T5 may be coupled to the emission control line EL. The fifth transistor T5 may be turned on when an emission control signal having a gate-on voltage is supplied to the emission control line EL, and may be turned off otherwise.

[0104] The sixth transistor T6 is coupled between the second electrode of the first transistor T1 and the first electrode of the light emitting element LD. The gate electrode of the sixth transistor T6 may be coupled to the emission control line EL. When an emission control signal having a gate-on voltage is supplied to the emission control line EL, the sixth transistor T6 may be turned on, and may be turned off otherwise.

[0105] The seventh transistor T7 may be coupled between the initialization power supply Vint and the first electrode of the light-emitting element LD. The gate electrode of the seventh transistor T7 may be coupled to the scan line SL+1 of the subsequent stage. When a scan signal having a gate-on voltage is supplied to the scan line SL+1 of the subsequent stage, the seventh transistor T7 may be turned on, so that the voltage of the initialization power supply Vint can be supplied to the first electrode of the light-emitting element LD.

[0106] The storage capacitor Cst may be coupled between the first driving power source VDD and the first node N1. The storage capacitor Cst may store a voltage corresponding to both the data signal and the threshold voltage of the first transistor T1.

[0107] Despite Figure 4 In the embodiment of the present invention, the transistors (e.g., the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7) included in the driving circuit DC have been shown to be formed of P-type transistors, but the present invention is not limited thereto. For example, at least one of the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7 may be changed to an N-type transistor.

[0108] Figure 5 is a plan view showing a pixel unit according to an embodiment of the present invention. Figure 6 It is shown along Figure 5 A schematic cross-sectional view of a pixel unit taken along line AA′.

[0109] Although each electrode is simply shown as being formed of a single electrode layer for illustrative purposes, the present invention is not limited thereto. In an embodiment of the present invention, the expression "components are disposed and / or formed on the same layer" may mean that the components are formed by the same process.

[0110] Although for illustrative purposes, Figure 5 The plurality of light emitting elements LD are shown to be arranged in the first direction DR1 , but the arrangement of the light emitting elements LD is not limited thereto. For example, the light emitting elements LD may be arranged diagonally between the first electrode ELT1 and the second electrode ELT2 .

[0111] Reference Figure 1a 、 Figure 5 and Figure 6 , the display device according to the embodiment may include a substrate SUB, a first electrode ELT1, a second electrode ELT2, a light emitting element LD, a blocking structure CSL, a light conversion layer LCL, a light shielding pattern SDM, and a passivation layer PSL.

[0112] The substrate SUB may be a rigid substrate or a flexible substrate, and the material or properties of the substrate SUB are not particularly limited. For example, the substrate SUB may be a rigid substrate made of glass or tempered glass, or a flexible substrate formed of a thin film made of plastic or metal. In addition, the substrate SUB may be a transparent substrate, but is not limited thereto. For example, the substrate SUB may be a translucent substrate, an opaque substrate, or a reflective substrate.

[0113] The substrate SUB may be divided into a first pixel region PXA1, a second pixel region PXA2, and a third pixel region PXA3 to form pixel regions PXA. The first pixel region PXA1 may be a region in which the first pixel PXL1 is disposed. The second pixel region PXA2 may be a region in which the second pixel PXL2 is disposed. The third pixel region PXA3 may be a region in which the third pixel PXL3 is disposed. The first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may be arranged continuously in the first direction DR1 in the pixel unit PXU1. Therefore, the first pixel region PXA1, the second pixel region PXA2, and the third pixel region PXA3 may also be arranged continuously in the first direction DR1.

[0114] The first electrode ELT1 and the second electrode ELT2 may be disposed on the substrate SUB. The first electrode ELT1 and the second electrode ELT2 may be disposed in each of the pixel areas PXA of the substrate SUB. Figure 5 As shown in , the first electrodes ELT1 and the second electrodes ELT2 may be alternately arranged in the first direction DR1. In other words, the first electrodes ELT1 and the second electrodes ELT2 may be arranged on the substrate SUB at positions spaced apart from each other along the first direction DR1, and at least one light emitting element LD is arranged between the first electrode ELT1 and the second electrode ELT2. The first electrodes ELT1 and the second electrodes ELT2 may extend in the second direction DR2.

[0115] In an embodiment, the first electrode ELT1 may be electrically coupled to the first end EP1 of each light emitting element LD. The second electrode ELT2 may be electrically coupled to the second end EP2 of each light emitting element LD.

[0116] The first and second electrodes ELT1 and ELT2 may be disposed on the same plane and have the same (or substantially the same) height. If the first and second electrodes ELT1 and ELT2 have the same height, each light emitting element LD may be more reliably coupled to the first and second electrodes ELT1 and ELT2.

[0117] The first electrode ELT1 and the second electrode ELT2 may be formed of a conductive material, which may include metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Ti, and alloys thereof.

[0118] Each of the first electrode ELT1 and the second electrode ELT2 may have a single-layer structure, but the present invention is not limited thereto. For example, each of the first electrode ELT1 and the second electrode ELT2 may have a multi-layer structure. For example, each of the first electrode ELT1 and the second electrode ELT2 may further include a cover layer (not shown) formed of a transparent conductive material. The cover layer may be provided to cover the first electrode ELT1 and the second electrode ELT2 to prevent or reduce damage to the first electrode ELT1 and the second electrode ELT2 during the process of manufacturing the display device.

[0119] The materials of the first and second electrodes ELT1 and ELT2 are not limited to those mentioned above. For example, the first and second electrodes ELT1 and ELT2 can be made of a conductive material having a predetermined reflectivity. When the first and second electrodes ELT1 and ELT2 are made of a conductive material having a predetermined reflectivity, light emitted from the opposing ends EP1 and EP2 of the light-emitting element LD can travel in the direction of the displayed image (e.g., the third direction DR3). In other words, the light output efficiency of the display device can be improved.

[0120] Either the first electrode ELT1 or the second electrode ELT2 may be an anode electrode, and the other may be a cathode electrode. For example, the first electrode ELT1 may be a cathode electrode, and the second electrode ELT2 may be an anode electrode. However, the present invention is not limited thereto, and the first electrode ELT1 may be an anode electrode, and the second electrode ELT2 may be a cathode electrode.

[0121] Although the first and second electrodes ELT1 and ELT2 are shown as being directly disposed on the substrate SUB for illustrative purposes, the present invention is not limited thereto. For example, a component (pixel circuit layer) for allowing the display device to be driven as a passive matrix or an active matrix may be disposed between the substrate SUB and the first and second electrodes ELT1 and ELT2.

[0122] The first electrode ELT1 and the second electrode ELT2 can provide a driving signal for driving the corresponding light emitting element LD. Figure 3a The first electrode ELT1 and the second electrode ELT2 can be electrically coupled to either a drive circuit DC or a second drive power supply VSS. The first electrode ELT1 can be electrically coupled to the second drive power supply VSS. The second electrode ELT2 can be electrically coupled to the drive circuit DC. The first electrode ELT1 and the second electrode ELT2 can be respectively coupled to a first terminal EP1 and a second terminal EP2 of a light-emitting element LD, so that a drive signal can be supplied to the light-emitting element LD. The light-emitting element LD can emit light having a predetermined brightness corresponding to the drive current supplied from the drive circuit DC.

[0123] Although for illustrative purposes, Figure 5and Figure 6 It is shown that two first electrodes ELT1 and two second electrodes ELT2 are provided in each pixel area PXA, but the number of the first electrodes ELT1 and the second electrodes ELT2 provided in each pixel area PXA may be changed as needed.

[0124] The light-emitting element LD may be disposed on the substrate SUB and, for example, between the first electrode ELT1 and the second electrode ELT2. As described above, the first end EP1 of the light-emitting element LD may be in contact with either the first electrode ELT1 or the second electrode ELT2. The second end EP2 may be in contact (e.g., electrically, directly, or physically) with the other of the first and second electrodes ELT1 and ELT2. The light-emitting element LD may receive a drive current from the first and second electrodes ELT1 and ELT2 and emit light having a predetermined brightness corresponding to the supplied drive current.

[0125] As described above, for example, the light emitting element LD may be a blue light emitting element that emits light of the same color (e.g., blue). However, the present invention is not limited thereto. The light emitting element LD may be a light emitting element that emits light of different colors (e.g., red, green, and blue).

[0126] The barrier structure CSL may be provided on the entire area of ​​the substrate SUB. The barrier structure CSL may be provided with an overall uniform (or substantially uniform) thickness. In an embodiment, the thickness of the barrier structure CSL may be 1 μm or less, but the present invention is not limited thereto.

[0127] The barrier structure CSL may be an inorganic layer including an inorganic material. For example, the barrier structure CSL may be made of silicon nitride SiN x , silicon oxide SiO x and silicon oxynitride SiO x N y In an embodiment, the blocking structure CSL may include silicon nitride SiN x of the inorganic layer.

[0128] The barrier structure CSL may be divided into a concave area VA, a convex area RA, and a connection area CA connecting the concave area VA with the convex area RA. In an embodiment, the concave area VA and the convex area RA may be alternately defined in the first direction DR1. The connection area CA may be defined between each concave area VA and the corresponding convex area RA.

[0129] The barrier structure CSL may be formed of a first surface S1, a second surface S2, and a third surface S3. The first surface S1 may be a surface disposed in the concave area VA. The second surface S2 may be a surface disposed in the connection area CA. The third surface S3 may be a surface disposed in the convex area RA. The first surface S1, the second surface S2, and the third surface S3 may be integrally bonded to each other.

[0130] The first surface S1 may be a lower surface of the barrier structure CSL and may be a surface disposed adjacent to the substrate SUB. In an embodiment, the first surface S1 may be in contact with the first and second electrodes ELT1 and ELT2.

[0131] The second surface S2 may be a sidewall of the blocking structure CSL and may be a surface surrounding sides of the light conversion layer LCL and the light-shielding pattern SDM to be described below. The first surface S1 and the third surface S3 of the blocking structure CSL may be coupled to each other through the second surface S2.

[0132] The second surface S2 may be oriented at an angle to the first surface S1. In an embodiment, the obtuse angle formed between the first surface S1 and the second surface S2 may be greater than 90° and less than 120°. However, the present invention is not limited thereto, and depending on the process of forming the barrier structure CSL, the obtuse angle formed between the first surface S1 and the second surface S2 may be greater than 120°.

[0133] The third surface S3 may be an upper surface of the barrier structure CSL and may be a surface spaced apart from the substrate SUB by a distance greater than that between the first surface S1 and the substrate SUB. A first space IS defined by the substrate SUB, the second surface S2, and the third surface S3 may be formed between the barrier structure CSL and the substrate SUB.

[0134] Portions of the first and second electrodes ELT1 and ELT2 and the light emitting element LD may be disposed in a first space IS defined between the barrier structure CSL and the substrate SUB. In an embodiment, the first space IS may be sealed by the substrate SUB, the barrier structure CSL, and the passivation layer PSL and filled with air, but the present invention is not limited thereto. For example, the first space IS may be filled with other materials.

[0135] The third surface S3 may include a hole HP. The hole HP may be an insertion hole through which the light emitting element LD is disposed in the first space IS between the substrate SUB and the barrier structure CSL. At least a portion of the hole HP may overlap the light emitting element LD with respect to the third direction DR3.

[0136] The second space OS may be formed between the blocking structure CSL and the passivation layer PSL. Specifically, the second space OS may be a space defined by the first surface S1 and the second surface S2 of the blocking structure CSL. The light conversion layer LCL, which will be described below, may be disposed in the second space OS. The first space IS and the second space OS may be alternately formed in the first direction DR1.

[0137] The light conversion layer LCL may be disposed on the substrate SUB. The light conversion layer LCL may include a first wavelength conversion pattern LCP1, a second wavelength conversion pattern LCP2, and a light scattering pattern LCP3. The first wavelength conversion pattern LCP1 may be disposed in the first pixel area PXA1. The second wavelength conversion pattern LCP2 may be disposed in the second pixel area PXA2. The light scattering pattern LCP3 may be disposed in the third pixel area PXA3.

[0138] like Figure 5 As shown in FIG, the first wavelength conversion pattern LCP1, the second wavelength conversion pattern LCP2, and the light scattering pattern LCP3 may be spaced apart from each other in the first direction DR1 and extend in the second direction DR2.

[0139] The light conversion layer LCL may be formed in the second space OS defined by the first and second surfaces S1 and S2 of the blocking structure CSL. The shape of the light conversion layer LCL may be determined according to the shape of the blocking structure CSL.

[0140] The first wavelength conversion pattern LCP1, the second wavelength conversion pattern LCP2, and the light scattering pattern LCP3 may each include a base resin BR and various particles dispersed in the base resin BR. In detail, the first wavelength conversion pattern LCP1 may include first wavelength conversion particles WC1 dispersed in the base resin BR. The second wavelength conversion pattern LCP2 may include second wavelength conversion particles WC2 dispersed in the base resin BR. The light scattering pattern LCP3 may include scattering particles SCT dispersed in the base resin BR. The first wavelength conversion pattern LCP1 and the second wavelength conversion pattern LCP2 may also each include scattering particles SCT dispersed in the base resin BR.

[0141] The material of the matrix resin BR is not particularly limited as long as it is a material having high transmittance and excellent dispersion characteristics for the first wavelength conversion particles WC1, the second wavelength conversion particles WC2, and the scattering particles SCT. For example, the matrix resin BR may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0142] The first wavelength conversion particles WC1 of the first wavelength conversion pattern LCP1 and the second wavelength conversion particles WC2 of the second wavelength conversion pattern LCP2 can convert the peak wavelength of the incident light into another specific peak wavelength. In other words, the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2 can convert the color of the incident light.

[0143] For example, the first wavelength conversion particles WC1 can convert the blue light provided by the light emitting element LD into red light and emit red light. The second wavelength conversion particles WC2 can convert the blue light provided by the light emitting element LD into green light and emit green light. In other words, the first pixel area PXA1 in which the first wavelength conversion pattern LCP1 is provided can be a region that emits red light. The second pixel area PXA2 in which the second wavelength conversion pattern LCP2 is provided can be a region that emits green light.

[0144] Examples of the first and second wavelength conversion particles WC1 and WC2 may include quantum dots, quantum rods, fluorescent substances, etc. Quantum dots may be a particle material that emits light having a specific wavelength while electrons transition from a conduction band to a valence band.

[0145] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have a specific band gap depending on their composition and size, and thus absorb light and then emit light with an intrinsic wavelength. Examples of semiconductor nanocrystals that are quantum dots can include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI compound nanocrystals, and combinations thereof.

[0146] For example, examples of Group IV nanocrystals may include silicon (Si), germanium (Ge), and binary compounds such as silicon carbide (SiC) and silicon germanium (SiGe), but the present invention is not limited thereto.

[0147] Examples of II-VI compound nanocrystals may include binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof, binary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe , CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and quaternary compounds such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. However, the present invention is not limited thereto.

[0148] Examples of III-V compound nanocrystals may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof, ternary compounds such as GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InNPs, InNAs, InNSb, InPAs, and mixtures thereof, and quaternary compounds such as GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, and mixtures thereof. However, the present invention is not limited thereto.

[0149] Examples of IV-VI group compound nanocrystals may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof, ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof, and quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. However, the present invention is not limited thereto.

[0150] The quantum dots can have any shape commonly used in the art and are not particularly limited. For example, spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanoplate particles can be used. The binary, ternary and / or quaternary compounds can be present in the particles in a substantially uniform concentration, or can be present in the same particle in different concentration distributions.

[0151] The quantum dot may have a core-shell structure comprising a core having the above-mentioned nanocrystals and a shell surrounding the core. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases in the direction from the surface of the particle to the center of the particle. The shell of the quantum dot may serve as a protective layer to prevent or reduce chemical changes in the core so that semiconductor properties can be maintained, and / or may serve as a charging layer for assigning electrophoretic properties to the quantum dot. The shell may have a single-layer structure or a multi-layer structure. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0152] For example, although examples of metal or non-metal oxides may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 and / or NiO, and / or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4 and / or CoMn2O4, the present invention is not limited thereto.

[0153] In addition, although examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, and AlSb, the present invention is not limited thereto.

[0154] The light emitted from the aforementioned quantum dots can have a full width at half maximum (FWHM) of the emission wavelength spectrum of approximately 45 nm or less. This can improve the purity and reproducibility of the colors displayed by the display device. Furthermore, the light emitted from the quantum dots can be emitted in a variety of directions, regardless of the direction of the incident light. Therefore, the side visibility of the display device can be improved.

[0155] The first wavelength conversion particles WC1 and the second wavelength conversion particles WC2 may be formed of quantum dots. In this case, the diameter of the quantum dots forming each first wavelength conversion particle WC1 may be larger than the diameter of the quantum dots forming each second wavelength conversion particle WC2. For example, the diameter of the quantum dots forming the first wavelength conversion particles WC1 may be approximately to approximate and the diameter of the quantum dots forming the second wavelength conversion particles WC2 can be approximately to approximate However, the present invention is not limited thereto.

[0156] The light scattering pattern LCP3 may include scattering particles SCT. In addition, as described above, the first wavelength conversion pattern LCP1 and the second wavelength conversion pattern LCP2 may each further include scattering particles SCT.

[0157] The scattering particles SCT may have a refractive index different from that of the matrix resin BR and form an optical interface with the matrix resin BR. The material of each scattering particle SCT is not particularly limited as long as it can scatter at least some of the transmitted light. For example, the scattering particles SCT may be made of oxide particles such as titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), or silicon dioxide.

[0158] The scattering particles SCT can scatter light in random directions regardless of the direction of incident light and substantially do not convert the wavelength of light passing through the light scattering pattern LCP3. Thus, the side visibility of the display device can be enhanced.

[0159] The light shielding pattern SDM may be provided on the substrate SUB. Figure 5 As shown in FIG, a plurality of light-shielding patterns SDM may be spaced apart from each other in the first direction DR1 and extend in the second direction DR2. Each light-shielding pattern SDM may be disposed along a boundary between corresponding pixel areas PXA. In other words, the light-shielding pattern SDM may be disposed between the first wavelength conversion pattern LCP1 and the second wavelength conversion pattern LCP2, between the second wavelength conversion pattern LCP2 and the light scattering pattern LCP3, or between the light scattering pattern LCP3 and the first wavelength conversion pattern LCP1.

[0160] The light-shielding pattern SDM may be disposed in the second space OS of the blocking structure CSL, which is defined by the first and second surfaces S1 and S2 disposed in a boundary between corresponding pixel areas PXA.

[0161] The light-shielding patterns SDM may include a light-shielding material capable of blocking or reducing light transmission. Each light-shielding pattern SDM may be disposed between corresponding pixel areas PXA, thereby preventing or reducing light leakage or color mixing between adjacent pixels. Furthermore, the light-shielding patterns SDM may include metal or a material with high reflectivity, thereby enhancing the light output efficiency of the display device.

[0162] For example, when light emitted from the light-emitting element LD disposed in the first pixel area PXA1 travels toward the second pixel area PXA2, which is an adjacent pixel area, the light-shielding pattern SDM disposed between the first pixel area PXA1 and the second pixel area PXA2 can block or reduce the amount of light traveling toward the second pixel area PXA2. Furthermore, the light-shielding pattern SDM can reflect the light traveling toward the second pixel area PXA2, causing the light to travel back toward the first pixel area PXA1. The light reflected toward the first pixel area PXA1 can be emitted in a third direction DR3, which is a display direction, through the metal layer (e.g., the first electrode ELT1 and the second electrode ELT2) disposed in the first pixel area PXA1. Therefore, the light output efficiency of the first pixel area PXA1 can be enhanced.

[0163] The passivation layer PSL may be disposed on the entire area of ​​the substrate SUB. The passivation layer PSL may include an organic insulating layer formed of an organic material or an inorganic insulating layer formed of an inorganic material.

[0164] The passivation layer PSL may cover the light conversion layer LCL. In other words, the passivation layer PSL may cover the upper surface of the first wavelength conversion pattern LCP1, the upper surface of the second wavelength conversion pattern LCP2, and the upper surface of the light scattering pattern LCP3. The first wavelength conversion pattern LCP1, the second wavelength conversion pattern LCP2, and the light scattering pattern LCP3 may be sealed by the blocking structure CSL and the passivation layer PSL. The sealing structure of the blocking structure CSL and the passivation layer PSL may prevent or reduce the degradation of the first wavelength conversion particles WC1 in the first wavelength conversion pattern LCP1 or the second wavelength conversion particles WC2 in the second wavelength conversion pattern LCP2.

[0165] In an embodiment, the passivation layer PSL may include a protrusion formed in a region where the passivation layer PSL overlaps the hole HP formed in the third surface S3 of the barrier structure CSL. The protrusion of the passivation layer PSL may protrude toward the substrate SUB so that at least a portion of the hole HP may be filled with the protrusion.

[0166] As described above, the light-emitting element LD can receive a drive signal from the first electrode ELT1 and the second electrode ELT2 and emit light in response to the drive signal. Light emitted from the light-emitting element LD can be incident on the light conversion layer LCL provided in each pixel area PXA and travel in random directions through particles within the light conversion layer LCL. Light traveling in directions other than the third direction DR3 can be reflected by the first electrode ELT1, the second electrode ELT2, and the light-shielding pattern SDM provided on the substrate SUB, and thus travel in the third direction DR3.

[0167] Figures 7 to 9 is with Figure 5 The line AA′ corresponds to a cross-sectional view of a pixel unit according to various embodiments.

[0168] Figures 7 to 9 The embodiments shown in may include Figure 6 Components identical or similar to those of the embodiments shown in FIG. 1 and FIG. 2 are shown in FIG. 3 . The same components will be represented by the same reference numerals, and their description will be omitted or simplified. The following description will focus on the differences between the embodiments.

[0169] and Figure 6 The embodiments are different. Figure 7 In the embodiment shown in FIG, the pixel unit PXU1a may further include a color filter layer CFL disposed in each pixel area PXA.

[0170] Reference Figure 7 Pixel unit PXU1a may include a first pixel PXL1a, a second pixel PXL2a, and a third pixel PXL3a, and may further include a color filter layer CFL. The color filter layer CFL may be disposed on a substrate SUB. The color filter layer CFL may include a first color filter CF1, a second color filter CF2, and a third color filter CF3. The first pixel PXL1a may include a first color filter CF1. The second pixel PXL2a may include a second color filter CF2. The third pixel PXL3a may include a third color filter CF3.

[0171] The first color filter CF1 may be provided in the first pixel region PXA1 and may not be provided in the second pixel region PXA2 or the third pixel region PXA3. The second color filter CF2 may be provided in the second pixel region PXA2 and may not be provided in the first pixel region PXA1 or the third pixel region PXA3. The third color filter CF3 may be provided in the third pixel region PXA3 and may not be provided in the first pixel region PXA1 or the second pixel region PXA2.

[0172] As such, although the color filters CF1, CF2, and CF3 may be spaced apart from each other based on the corresponding pixel area PXA, the present invention is not limited thereto. In an embodiment, portions of the color filters CF1, CF2, and CF3 may overlap each other along a boundary of the pixel area PXA.

[0173] Each of the color filters CF1 , CF2 , and CF3 may allow light having a specific wavelength to be transmitted therethrough while partially absorbing light having other wavelengths.

[0174] For example, the first color filter CF1 may be a red color filter. In other words, the first color filter CF1 may allow light having a red wavelength to transmit therethrough and may partially absorb light in a wavelength band adjacent to the red wavelength, thereby sharpening (or narrowing) the wavelength spectrum of red light represented by the first pixel PXL1a, thereby improving color purity.

[0175] The second color filter CF2 may be a green color filter and may allow light having a green wavelength to transmit therethrough while partially absorbing light of a wavelength band adjacent to the green wavelength, thereby sharpening the wavelength spectrum of the green light represented by the second pixel PXL2a.

[0176] The third color filter CF3 may be a blue color filter and may allow light having a blue wavelength to transmit therethrough while partially absorbing light of a wavelength band adjacent to the blue wavelength, thereby sharpening the wavelength spectrum of blue light represented by the third pixel PXL3a.

[0177] Therefore, the display device can ensure excellent color reproducibility through the first color filter CF1, the second color filter CF2, and the third color filter CF3.

[0178] and Figure 7 The embodiments are different. Figure 8 In the embodiment shown in FIG, the pixel unit PXU1b may include a first pixel PXL1b, a second pixel PXL2b, and a third pixel PXL3b, and may further include a black matrix BM positioned along a boundary of each pixel area PXA.

[0179] Reference Figure 8 The pixel unit PXU1b may further include a black matrix BM. The black matrix BM may be disposed on the substrate SUB and along the boundary of each pixel area PXA.

[0180] The black matrix BM may be disposed in the second space OS of the blocking structure CSL defined by the first and second surfaces S1 and S2 disposed in a boundary between corresponding pixel areas PXA. In an embodiment, the black matrix BM may overlap the light blocking pattern SDM.

[0181] The black matrix BM may absorb light of all colors incident on the black matrix BM, thereby preventing or reducing a light leakage phenomenon and a color mixing phenomenon between adjacent pixels.

[0182] and Figure 6 The embodiments are different. Figure 9 In the embodiment shown in FIG, the pixel unit PXU1c may further include an anchor pattern ANCP disposed in the first space ISc of each pixel area PXA.

[0183] Reference Figure 9 , the pixel unit PXU1c may include a first pixel PXL1c, a second pixel PXL2c, and a third pixel PXL3c, and may further include an anchor pattern ANCP disposed in each pixel area PXA.

[0184] The anchor pattern ANCP may fill the first space ISc formed between the substrate SUB and the barrier structure CSL. The anchor pattern ANCP may cover the upper portion of the light emitting element LD. In an embodiment, the anchor pattern ANCP may also be provided between the substrate SUB and the light emitting element LD.

[0185] The light-emitting element LD can be stably fixed to the substrate SUB by the anchor pattern ANCP. The anchor pattern ANCP can prevent the light-emitting element LD from being removed from the substrate SUB during the process of manufacturing the display device. Therefore, the occurrence of malfunctions that may be caused by the removal of the light-emitting element LD can be prevented or reduced, thereby enhancing the reliability of the display device.

[0186] Although the anchor pattern ANCP may completely fill the first space ISc formed by the substrate SUB and the barrier structure CSL, the present invention is not limited thereto. In an embodiment, the anchor pattern ANCP may cover at least a portion of the light emitting element LD and fill only a portion of the first space ISc.

[0187] The material of the anchor pattern ANCP is not particularly limited. In an embodiment, the anchor pattern ANCP may include an organic material.

[0188] Figure 10 is a plan view showing a pixel unit according to an embodiment of the present invention. Figure 11 It is shown along Figure 10 A schematic cross-sectional view of a pixel unit according to an embodiment taken along line BB′.

[0189] With reference Figures 5 to 9 The described embodiments are different. Figure 10 and Figure 11 In the embodiment shown in , the light conversion layer LCLd can be disposed in a first space IS formed by the substrate SUB and the second and third surfaces S2 and S3 of the blocking structure CSLd, and the light emitting element LD can be disposed in a second space OS formed by the first and second surfaces S1 and S2 of the blocking structure CSLd. Figure 10 and Figure 11 Other configurations and references to the embodiments shown in Figures 5 to 9 The described embodiments are of the same or similar construction.

[0190] Reference Figure 10 and Figure 11According to an embodiment, the pixel unit PXU2 may include a first pixel PXL1d, a second pixel PXL2d, and a third pixel PXL3d. The first pixel PXL1d, the second pixel PXL2d, and the third pixel PXL3d may each include a substrate SUB, a first electrode ELT1, a second electrode ELT2, a light emitting element LD, a blocking structure CSLd, a light conversion layer LCLd, a light shielding pattern SDM, and a passivation layer PSL.

[0191] The substrate SUB, the first electrode ELT1, the second electrode ELT2, the light emitting element LD, the light shielding pattern SDM and the passivation layer PSL are the same as or similar to the above-mentioned substrate SUB, the first electrode ELT1, the second electrode ELT2, the light emitting element LD, the light shielding pattern SDM and the passivation layer PSL; therefore, repeated description thereof will be omitted.

[0192] The barrier structure CSLd may be disposed on the entire area of ​​the substrate SUB. The barrier structure CSLd may be formed of a first surface S1, a second surface S2, and a third surface S3.

[0193] The first space IS may be formed between the substrate SUB and the barrier structure CSLd by the substrate SUB and the second and third surfaces S2 and S3 of the barrier structure CSLd.

[0194] The first hole HP1 may be formed in the third surface S3 of the blocking structure CSLd. The first hole HP1 may be an inlet through which the light conversion layer LCLd is injected.

[0195] The light conversion layer LCLd may be disposed in the first space IS between the blocking structure CSLd and the substrate SUB. Although the light conversion layer LCLd disposed in the first space IS completely fills the first space IS, the present invention is not limited thereto. For example, the light conversion layer LCLd may partially fill the first space IS.

[0196] Second spaces OS defined by the first and second surfaces S1 and S2 of the barrier structure CSLd may be formed in the barrier structure CSLd. The first and second spaces IS and OS may be alternately formed in the first direction DR1.

[0197] At least a portion of the first electrode ELT1 and at least a portion of the second electrode ELT2 may be disposed in the second space OS. The light emitting element LD may be disposed between the first electrode ELT1 and the second electrode ELT2 in the second space OS.

[0198] The second hole HP2 may be formed in the first surface S1 of the blocking structure CSLd. The first electrode ELT1 and the second electrode ELT2 may be exposed through the second hole HP2. The light emitting element LD may be disposed between the first electrode ELT1 and the second electrode ELT2. The light emitting element LD may contact each of the first electrode ELT1 and the second electrode ELT2 in the second space OS and receive a driving signal from the first electrode ELT1 and the second electrode ELT2.

[0199] As described above, the light conversion layer LCLd may be disposed in the first space IS formed between the substrate SUB and the blocking structure CSLd.

[0200] The light conversion layer LCLd may include a first wavelength conversion pattern LCP1d, a second wavelength conversion pattern LCP2d, and a light scattering pattern LCP3d. The first wavelength conversion pattern LCP1d may be disposed in the first pixel area PXA1, the second wavelength conversion pattern LCP2d may be disposed in the second pixel area PXA2, and the light scattering pattern LCP3d may be disposed in the third pixel area PXA3.

[0201] Figure 12 and Figure 13 is with Figure 10 The line BB′ corresponds to a cross-sectional view of a pixel unit according to various embodiments.

[0202] Reference Figure 12 The pixel unit PXU2a may further include a color filter layer CFLe. The color filter layer CFLe may be disposed on the substrate SUB and on the passivation layer PSL.

[0203] The color filter layer CFLe may include a first color filter CF1e, a second color filter CF2e, and a third color filter CF3e. The first pixel PXL1e may include the first color filter CF1e. The second pixel PXL2e may include the second color filter CF2e. The third pixel PXL3e may include the third color filter CF3e.

[0204] Therefore, the display device can ensure excellent color reproducibility through the first color filter CF1e, the second color filter CF2e, and the third color filter CF3e.

[0205] Figure 12 The color filter layer CFLe may have Figure 7 The configuration of the color filter layer CFL is similar to that of FIG. 4 ; therefore, repeated description of the color filter layer CFLe will be omitted.

[0206] Reference Figure 13 The pixel unit PXU2b may include a first pixel PXL1f, a second pixel PXL2f, and a third pixel PXL3f, and may further include a black matrix BMf. Figure 13 Examples and Figure 12 The difference between the embodiments is that: Figure 13 In the embodiment, a black matrix BMf is also provided. Figure 13 Other configurations of the embodiments and Figure 12 The structures of the embodiments are the same or similar.

[0207] The black matrix BMf may be disposed on the substrate SUB and on the passivation layer PSL. The black matrix BMf may be disposed along a boundary of each of the pixels PXL1f, PXL2f, and PXL3f and on the same plane as that of the color filter layer CFL.

[0208] The black matrix BMf may prevent or reduce light leakage that may occur between the pixels PXL1f, PXL2f, and PXL3f.

[0209] Figure 13 The structure of the black matrix BMf can be Figure 8 The configuration of the black matrix BMf is similar; therefore, repeated description of the black matrix BMf will be omitted.

[0210] While the embodiments of the present invention have been described above with reference to the accompanying drawings, it will be understood by those skilled in the art that the present invention may be implemented in other specific forms without changing the technical spirit or essential characteristics. Therefore, it should be understood that the above embodiments are illustrative in all respects and not restrictive.

Claims

1. A display device, comprising: substrate; a first electrode and a second electrode disposed on the substrate at positions spaced apart from each other along a first direction; a light-emitting element, disposed between the first electrode and the second electrode; a blocking structure disposed on the first electrode and the second electrode and comprising a first surface, a third surface, and a second surface disposed between the first surface and the third surface and coupling the first surface to the third surface; a light conversion layer, disposed on the blocking structure; as well as a passivation layer, disposed on the light conversion layer, wherein a first space defined by the second surface and the third surface is formed between the substrate and the blocking structure, wherein a second space defined by the first surface and the second surface is formed between the blocking structure and the passivation layer, wherein the first spaces and the second spaces are positioned alternately in the first direction, wherein the light emitting element is arranged in the first space, and Wherein, the light conversion layer is arranged in at least one of the second spaces.

2. The display device according to claim 1, wherein The third surface has a hole overlapping the light emitting element.

3. The display device according to claim 1 , further comprising: A color filter is disposed on the light conversion layer.

4. The display device according to claim 1, wherein The light conversion layer includes a matrix resin and wavelength conversion particles dispersed in the matrix resin.

5. The display device according to claim 4, wherein The light conversion layer further includes light scattering particles dispersed in the matrix resin. The display device according to claim 1 , wherein: The first surface is closer to the substrate than the third surface, and the first surface and the third surface are alternately arranged in the first direction.

7. The display device according to claim 1, wherein The first space is sealed by the substrate, the barrier structure, and the passivation layer, and is filled with air.

8. The display device according to claim 1, further comprising: An anchoring pattern is disposed in the first space, wherein the light emitting element is fixed between the substrate and the anchoring pattern.

9. The display device according to claim 1, further comprising: A light-shielding pattern is positioned along the second surface in the second space where the light conversion layer is not included, wherein the light-shielding pattern includes metal.

10. The display device according to claim 1, further comprising: A black matrix is ​​filled in the second space excluding the light conversion layer, the black matrix being configured to absorb and block incident light.

11. A display device, comprising: substrate; a first electrode and a second electrode disposed on the substrate at positions spaced apart from each other along a first direction; a light-emitting element, disposed between the first electrode and the second electrode; a light conversion layer, disposed on the substrate; as well as a blocking structure disposed on the first electrode and the second electrode and including a first surface, a third surface, and a second surface disposed between the first surface and the third surface and coupling the first surface with the third surface, wherein a first space defined by the second surface and the third surface is formed between the substrate and the blocking structure, wherein a second space defined by the first surface and the second surface is formed in the blocking structure, wherein the first spaces and the second spaces are positioned alternately in the first direction, Wherein, the light conversion layer is arranged in the first space, and Wherein, the light emitting element is arranged in at least one of the second spaces.

12. The display device according to claim 11, wherein The first surface exposes at least a portion of the first electrode and at least a portion of the second electrode, and has a first hole overlapping the light emitting element.

13. The display device according to claim 11, wherein The third surface has a second hole overlapping the light conversion layer.

14. The display device according to claim 11, further comprising: a passivation layer, disposed on the blocking structure; and a color filter disposed on the passivation layer.

15. The display device according to claim 11, wherein The light conversion layer includes a matrix resin, wavelength conversion particles dispersed in the matrix resin, and light scattering particles dispersed in the matrix resin.

16. The display device according to claim 11, wherein The first surface is closer to the substrate than the third surface, and the first surface and the third surface are alternately arranged in the first direction.

17. The display device according to claim 11, further comprising: A light-shielding pattern is positioned along the second surface in the second space where the light-emitting element is not included, wherein the light-shielding pattern includes metal.

18. The display device according to claim 11, further comprising: A black matrix overlaps the second space where the light emitting element is not disposed on the blocking structure, and the black matrix is ​​configured to absorb and block incident light.

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