Executing device and executing method

Abstract

An example embodiment relates to an execution device including a motion device, an acceleration sensor, and a calculation device. The motion device is a device for executing a predetermined motion. The acceleration sensor is capable of measuring acceleration applied to the execution device. The calculation device measures an elapsed time after acceleration measured by the acceleration sensor becomes a value within a reference range, and causes the motion device to execute the predetermined motion when a predetermined time elapses in a state where the acceleration remains a value within the reference range.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to an execution device and an execution method. Background Technology

[0002] Japanese Patent Application Publication No. 2017-183683 discloses a measuring device for performing actions such as measuring electrostatic capacitance. This measuring device includes a base plate, a first sensor, a second sensor, and a circuit board. The first sensor has a first electrode disposed along the edge of the upper surface of the base plate. The second sensor has a second electrode fixed to the bottom surface of the base plate. The circuit board is mounted on the base plate and connected to the first and second sensors. The circuit board applies a high-frequency signal to the first and second electrodes, obtains a first measured value corresponding to the electrostatic capacitance from the voltage amplitude of the first electrode, and obtains a second measured value corresponding to the electrostatic capacitance from the voltage amplitude of the second electrode. Summary of the Invention

[0003] In one exemplary embodiment, an actuator is provided, which is conveyed to a transport device disposed in a semiconductor manufacturing apparatus to perform a predetermined action. The actuator includes an actuation device, an acceleration sensor, and a computing device. The actuation device is a means for performing the predetermined action. The acceleration sensor is capable of measuring the acceleration applied to the actuator. The computing device causes the actuation device to perform the predetermined action based on the acceleration measured by the acceleration sensor. The computing device measures the elapsed time after the acceleration measured by the acceleration sensor becomes below a threshold value; if a predetermined time has elapsed while the acceleration does not exceed the threshold value, it determines that the actuator is placed on the mounting stage of the semiconductor manufacturing apparatus and causes the actuation device to perform the predetermined action. Attached Figure Description

[0004] Figure 1 This is a diagram illustrating the processing system.

[0005] Figure 2 This is a three-dimensional diagram illustrating an alignment device.

[0006] Figure 3 This is a diagram illustrating an example of a plasma processing device.

[0007] Figure 4 This is a top view of an example measuring instrument, viewed from the top surface side.

[0008] Figure 5 This is a top view of an example measuring instrument, viewed from the bottom side.

[0009] Figure 6 This is a three-dimensional diagram representing an example of the first sensor.

[0010] Figure 7 It is along Figure 6A sectional view cut along line VII-VII.

[0011] Figure 8 yes Figure 5 A magnified view of the second sensor.

[0012] Figure 9 This is a diagram illustrating the structure of the circuit board of the measuring instrument.

[0013] Figure 10 This is a schematic diagram illustrating an acceleration sensor of an example actuator.

[0014] Figure 11 This is a block diagram illustrating an example of a power supply control system circuit.

[0015] Figure 12 This is a flowchart illustrating an example of the operation method of an actuator. Detailed Implementation

[0016] The following describes various exemplary embodiments.

[0017] In one exemplary embodiment, an actuator is provided, which is conveyed to a transport device disposed in a semiconductor manufacturing apparatus to perform a predetermined action. The actuator includes an actuation device, an acceleration sensor, and a computing device. The actuation device is a means for performing the predetermined action. The acceleration sensor is capable of measuring the acceleration applied to the actuator. The computing device measures the elapsed time after the acceleration measured by the acceleration sensor reaches a value within a reference range. When a predetermined time has elapsed while the acceleration remains within the reference range, it is determined that the actuator has been placed on the mounting stage of the semiconductor manufacturing apparatus, and the actuation device is caused to perform the predetermined action.

[0018] In the execution device described in the above embodiments, the acceleration applied to the execution device can be detected by an acceleration sensor installed in the execution device. For example, when the execution device is conveyed to the transport device of a semiconductor manufacturing apparatus, acceleration is applied to the execution device based on speed changes. Furthermore, when the execution device is placed on a mounting table, the execution device is stationary and no acceleration is applied to it. The computing device can determine whether acceleration generated by movement based on the transport device is applied to the execution device. If a predetermined time has elapsed in a state where the acceleration does not exceed a reference range (i.e., acceleration generated by movement is not applied to the execution device), the computing device can determine that the execution device is placed on the mounting table. Based on this determination, the computing device causes the actuation device to perform a predetermined action. Therefore, the actuation device can automatically perform the predetermined action.

[0019] In one exemplary embodiment, if the acceleration exceeds a reference range within a specified time period from the start of the elapsed time measurement, the computing device may stop the elapsed time measurement and return to the initial state.

[0020] In one exemplary embodiment, if the acceleration exceeds a reference range after the actuator performs a predetermined action by the computing device, the computing device may determine that the actuator has been removed from the stage of the semiconductor manufacturing apparatus and stop the actuator from performing the predetermined action.

[0021] In another exemplary embodiment, an execution method is provided that causes an actuator conveyed to a transport device disposed in a semiconductor manufacturing apparatus to perform a predetermined action. The method includes the steps of: measuring an acceleration applied to the actuator, and measuring the elapsed time after the measured acceleration has reached a value within a reference range. Furthermore, the method includes the step of: when a predetermined time has elapsed since the start of the time measurement while the acceleration does not exceed the reference range, determining that the actuator has been placed on a mounting stage of the semiconductor manufacturing apparatus, and causing the actuator to perform the predetermined action.

[0022] In one exemplary embodiment, the execution method may further include the following steps: if the acceleration exceeds the reference range within a specified time period from the start of the elapsed time measurement, stop the elapsed time measurement and return to the initial state.

[0023] In one exemplary embodiment, the execution method may further include the following steps: if the acceleration exceeds a reference range after the actuator performs a predetermined action, it is determined that the actuator has been removed from the stage of the semiconductor manufacturing apparatus, and the actuator stops performing the predetermined action.

[0024] In one exemplary embodiment, the acceleration sensor may include: a first acceleration sensor capable of measuring a first acceleration in a first direction along the horizontal direction; and a second acceleration sensor capable of measuring a second acceleration in a second direction orthogonal to the first direction along the horizontal direction. The acceleration may be a composite value of the first acceleration and the second acceleration.

[0025] In one exemplary implementation, the reference range can be -0.005 m / s. 2 Up to 0.005m / s 2 .

[0026] In one exemplary implementation, the specified time can be 60 seconds or more.

[0027] In one exemplary embodiment, the prescribed action may be the measurement of electrostatic capacitance.

[0028] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent parts are labeled with the same symbols.

[0029] Regarding the execution device according to an exemplary embodiment, it can be transported by a processing system 1 having the function of a semiconductor manufacturing apparatus S1. First, the processing system will be described, which has a processing device for processing a workpiece and a transport device for transporting the workpiece to the processing device. Figure 1 This is a diagram illustrating a processing system. Processing system 1 includes platforms 2a-2d, containers 4a-4d, a loader module LM, an aligner AN, load locking modules LL1 and LL2, processing modules PM1-PM6, a transmission module TF, and a control unit MC. Furthermore, the number of platforms 2a-2d, containers 4a-4d, load locking modules LL1 and LL2, and processing modules PM1-PM6 is not limited and can be any number, including more than one.

[0030] Platforms 2a to 2d are arranged along one edge of the loader module LM. Containers 4a to 4d are respectively mounted on platforms 2a to 2d. Each of containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of containers 4a to 4d can be configured to hold a workpiece W. The workpiece W, like a wafer, has a generally disk-shaped design.

[0031] The loader module LM has a chamber wall that divides the transport space at atmospheric pressure within it. A transport device TU1 is installed within this transport space. The transport device TU1 is, for example, a multi-jointed robot and is controlled by a control unit MC. The transport device TU1 is configured to transport the workpiece W between containers 4a-4d and the aligner AN, between the aligner AN and the loading locking modules LL1-LL2, and between the loading locking modules LL1-LL2 and containers 4a-4d.

[0032] The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust the position (position calibration) of the workpiece W. Figure 2 This is a perspective view illustrating an alignment device. The alignment device AN includes a support platform 6T, a drive unit 6D, and a sensor 6S. The support platform 6T is a platform capable of rotating about an axis extending in the vertical direction. The support platform 6T is configured to support the workpiece W. The support platform 6T is rotated by the drive unit 6D. The drive unit 6D is controlled by a control unit MC. When the support platform 6T rotates under the power from the drive unit 6D, the workpiece W placed on the support platform 6T also rotates.

[0033] Sensor 6S is an optical sensor. Sensor 6S detects the edge of the workpiece W during its rotation. Based on the edge detection result, sensor 6S detects the offset of the angular position of the groove WN (or other markings) of the workpiece W relative to a reference angular position and the offset of the center position of the workpiece W relative to the reference position. Sensor 6S outputs the offset of the angular position of the groove WN and the offset of the center position of the workpiece W to the control unit MC. The control unit MC calculates the rotation amount of the support table 6T for correcting the angular position of the groove WN to the reference angular position based on the offset of the angular position of the groove WN. The control unit MC controls the drive device 6D to rotate the support table 6T by this rotation amount. Thus, the angular position of the groove WN can be corrected to the reference angular position. Furthermore, the control unit MC controls the position of the end effector of the conveying device TU1 when receiving the workpiece W from the alignment device AN based on the offset of the center position of the workpiece W. Thus, the center position of the workpiece W coincides with a predetermined position on the end effector of the conveying device TU1.

[0034] Return to Figure 1 Load locking modules LL1 and LL2 are each located between the loader module LM and the transmission module TF. Each of the load locking modules LL1 and LL2 provides a pre-decompression chamber.

[0035] The transfer module TF is airtightly connected to the loading and locking modules LL1 and LL2 via gate valves. The transfer module TF provides a decompression chamber capable of reducing pressure. A conveying device TU2 is installed within this decompression chamber. The conveying device TU2 is, for example, a multi-joint robot with a conveying arm TUa. The conveying device TU2 is controlled by a control unit MC. The conveying device TU2 is configured to convey the workpiece W between the loading and locking modules LL1-LL2 and the processing modules PM1-PM6, and between any two of the processing modules PM1-PM6.

[0036] Processing modules PM1 to PM6 are airtightly connected to the transmission module TF via gate valves. Each of the processing modules PM1 to PM6 is a processing device configured to perform specialized processing such as plasma treatment on the workpiece W.

[0037] The series of actions performed on the workpiece W in the processing system 1 are as follows: The conveying device TU1 of the loader module LM removes the workpiece W from any of the containers 4a to 4d and conveys it to the alignment device AN. Next, the conveying device TU1 removes the workpiece W, whose position has been adjusted, from the alignment device AN and conveys it to one of the loading locking modules LL1 and LL2. Then, one of the loading locking modules reduces the pressure in the pre-pressure chamber to a specified pressure. Next, the conveying device TU2 of the transfer module TF removes the workpiece W from one of the loading locking modules and conveys it to any of the processing modules PM1 to PM6. Then, one or more of the processing modules PM1 to PM6 process the workpiece W. Then, the conveying device TU2 conveys the processed workpiece W from the processing module to one of the loading locking modules LL1 and LL2. Next, the conveying device TU1 conveys the workpiece W from one of the loading locking modules to any of the containers 4a to 4d.

[0038] As described above, the processing system 1 includes a control unit MC. The control unit MC can be a computer equipped with a processor, a memory and other storage devices, a display device, an input / output device, a communication device, etc. A series of operations of the processing system 1 are realized by the control unit MC controlling each part of the processing system 1 according to the program stored in the storage device.

[0039] Figure 3 This diagram shows an example of a plasma processing device that can be used as any one of the processing modules PM1 to PM6. Figure 3 The plasma processing apparatus 10 shown is a capacitively coupled plasma etching apparatus. The plasma processing apparatus 10 has a generally cylindrical chamber body 12. The chamber body 12 is formed of, for example, aluminum, and its inner wall surface can be anodized. The chamber body 12 is safely grounded.

[0040] A generally cylindrical support portion 14 is provided on the bottom of the chamber body 12. The support portion 14 is made of, for example, an insulating material. The support portion 14 is provided inside the chamber body 12. The support portion 14 extends upward from the bottom of the chamber body 12. Furthermore, a worktable ST is provided inside the chamber S provided by the chamber body 12. The worktable ST is supported by the support portion 14.

[0041] The worktable ST has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum and are generally disk-shaped. The second plate 18b is disposed on the first plate 18a and is electrically connected to the first plate 18a.

[0042] An electrostatic chuck (ESC) is provided on the second plate 18b. The ESC has a structure in which electrodes, acting as conductive films, are disposed between a pair of insulating layers or sheets, and has a generally disc-shaped form. A DC power supply 22 is electrically connected to the electrodes of the ESC via a switch 23. The ESC attracts the workpiece W by electrostatic forces, such as the Coulomb force generated by the DC voltage from the DC power supply 22. Thus, the ESC is able to hold the workpiece W.

[0043] A focusing ring FR is provided on the periphery of the second plate 18b. The focusing ring FR is configured to surround the edge of the workpiece W and the electrostatic chuck ESC. The focusing ring FR has a first portion P1 and a second portion P2 (see reference). Figure 7 Part 1 P1 and Part 2 P2 have annular plate shapes. Part 2 P2 is the outermost part of Part 1 P1. Part 2 P2 has a greater thickness in the height direction than Part 1 P1. The inner edge P2i of Part 2 P2 has a larger diameter than the inner edge P1i of Part 1 P1. The workpiece W is placed on an electrostatic chuck ESC such that its edge region is located on Part 1 P1 of the focusing ring FR. The focusing ring FR can be formed from any of various materials such as silicon, silicon carbide, and silicon oxide.

[0044] A refrigerant flow path 24 is provided inside the second plate 18b. The refrigerant flow path 24 constitutes a temperature regulating mechanism. Refrigerant is supplied to the refrigerant flow path 24 from a refrigeration unit located outside the chamber body 12 via piping 26a. The refrigerant supplied to the refrigerant flow path 24 returns to the refrigeration unit via piping 26b. In this way, the refrigerant circulates between the refrigerant flow path 24 and the refrigeration unit. The temperature of the workpiece W supported by the electrostatic chuck ESC is controlled by controlling the temperature of this refrigerant.

[0045] Multiple (e.g., three) through holes 25 are formed on the worktable ST. These through holes 25 are formed inside the electrostatic chuck ESC when viewed from above. A lifting pin 25a is inserted into each of these through holes 25. Additionally, in... Figure 3 The image depicts a through hole 25 into which a lifting pin 25a is inserted. The lifting pin 25a is configured to move up and down within the through hole 25. The workpiece W, supported on the electrostatic chuck ESC, rises by the rising of the lifting pin 25a.

[0046] On the worktable ST, multiple (e.g., three) through holes 27 are formed at a position further outward than the electrostatic chuck ESC, penetrating the worktable ST (lower electrode LE). A lifting pin 27a is inserted into each of these through holes 27. Additionally, in... Figure 3The image depicts a through hole 27 into which a lifting pin 27a is inserted. The lifting pin 27a is configured to move up and down within the through hole 27. The focusing ring FR, supported on the second plate 18b, rises as the lifting pin 27a rises.

[0047] Furthermore, a gas supply line 28 is provided in the plasma processing apparatus 10. The gas supply line 28 supplies heat transfer gas (e.g., He gas) from the heat transfer gas supply mechanism to the area between the upper surface of the electrostatic chuck ESC and the back surface of the workpiece W.

[0048] Furthermore, the plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is positioned above and opposite the worktable ST. The upper electrode 30 is supported on the upper part of the chamber body 12 via an insulating shielding member 32. The upper electrode 30 may include a top plate 34 and a support body 36. The top plate 34 faces the chamber S. A plurality of exhaust holes 34a are provided on the top plate 34. The top plate 34 may be formed of silicon or quartz. Alternatively, the top plate 34 may be constructed by forming a plasma-resistant film such as yttrium oxide on the surface of an aluminum substrate.

[0049] The support body 36 detachably supports the top plate 34. The support body 36 may be made of a conductive material such as aluminum. The support body 36 may have a water-cooling structure. A gas diffusion chamber 36a is provided inside the support body 36. Multiple gas flow holes 36b, communicating with the exhaust port 34a, extend downwards from the gas diffusion chamber 36a. Furthermore, a gas inlet 36c is formed on the support body 36 to guide the processed gas into the gas diffusion chamber 36a. A gas supply pipe 38 is connected to this gas inlet 36c.

[0050] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow controller group 44. The gas source group 40 includes multiple gas sources for various gases. The valve group 42 includes multiple valves, and the flow controller group 44 includes multiple flow controllers such as a mass flow controller. The multiple gas sources of the gas source group 40 are respectively connected to the gas supply pipe 38 via corresponding valves in the valve group 42 and corresponding flow controllers in the flow controller group 44.

[0051] Furthermore, in the plasma processing apparatus 10, a deposit baffle 46 is detachably mounted along the inner wall of the chamber body 12. The deposit baffle 46 is also provided on the outer periphery of the support portion 14. The deposit baffle 46 prevents etching byproducts (deposits) from adhering to the chamber body 12. The deposit baffle 46 can be constructed by coating an aluminum material with a ceramic such as yttrium oxide.

[0052] An exhaust plate 48 is provided on the bottom side of the chamber body 12, between the support portion 14 and the side wall of the chamber body 12. The exhaust plate 48 can be constructed, for example, by coating aluminum with a ceramic such as yttrium oxide. Multiple holes extending through the thickness of the plate are formed on the exhaust plate 48. An exhaust port 12e is provided below the exhaust plate 48 and on the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump. The exhaust device 50 can reduce the pressure of the space inside the chamber body 12 to a desired vacuum level. Furthermore, a loading / unloading port 12g for the workpiece W is provided on the side wall of the chamber body 12. This loading / unloading port 12g can be opened and closed by a gate valve 54.

[0053] Furthermore, the plasma processing apparatus 10 also includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating a first high frequency for plasma generation. The first high-frequency power supply 62 generates, for example, a high frequency with a frequency of 27 to 100 MHz. The first high-frequency power supply 62 is connected to the upper electrode 30 via a matching device 66. The matching device 66 has circuitry for matching the output impedance of the first high-frequency power supply 62 with the input impedance of the load side (upper electrode 30 side). In addition, the first high-frequency power supply 62 can be connected to the lower electrode LE via the matching device 66.

[0054] The second high-frequency power supply 64 is a power supply that generates a second high frequency for introducing ions into the workpiece W. The second high-frequency power supply 64 generates, for example, a high frequency in the range of 400 kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the lower electrode LE via a matching converter 68. The matching converter 68 has circuitry for matching the output impedance of the second high-frequency power supply 64 with the input impedance on the load side (lower electrode LE side).

[0055] In the plasma processing apparatus 10, gas from one or more gas sources selected from a plurality of gas sources is supplied to the chamber S. The pressure in the chamber S is set to a predetermined pressure by an exhaust device 50. Furthermore, the gas in the chamber S is excited by a first high frequency from a first high-frequency power supply 62. This generates plasma. The workpiece W is then processed using the generated active species. Additionally, if necessary, ions can be introduced into the workpiece W by biasing a second high frequency based on a second high-frequency power supply 64.

[0056] Next, the actuator will be described. Figure 4 This is a top view of the actuator, viewed from the top surface side. Figure 5This is a top view showing the actuator, viewed from the bottom side. One example of the actuator 100 is a measuring device that measures the transport position of a transport device based on the processing system 1. The actuator 100 in the figure example is transported via a transport device of the processing system 1, which functions as a semiconductor manufacturing apparatus S1, and performs a predetermined operation of measuring electrostatic capacitance. Furthermore, the actuator 100 measures the transport position based on the measured electrostatic capacitance.

[0057] Figure 4 and Figure 5 The illustrated actuator 100 includes a base substrate 102. The base substrate 102 is formed of silicon, for example, and has a shape that is the same as the shape of the workpiece W, i.e., a generally disk-shaped shape. The diameter of the base substrate 102 is the same as the diameter of the workpiece W, for example, 300 mm. The shape and size of the actuator 100 are defined by the shape and size of the base substrate 102. Therefore, the actuator 100 has the same shape as the workpiece W and the same size as the workpiece W. Furthermore, a groove 102N (or other markings) is formed on the edge of the base substrate 102.

[0058] A plurality of first sensors 104A to 104C for measuring electrostatic capacitance are disposed on a base substrate 102. The plurality of first sensors 104A to 104C are arranged at equal intervals along the edge of the base substrate 102, for example, around the entire circumference of the edge. Specifically, each of the plurality of first sensors 104A to 104C is disposed along the edge of the upper surface side of the base substrate 102. The front end face of each of the plurality of first sensors 104A to 104C is along the side surface of the base substrate 102.

[0059] Furthermore, a plurality of second sensors 105A to 105C for measuring electrostatic capacitance are provided on the base substrate 102. The plurality of second sensors 105A to 105C are arranged at equal intervals along, for example, the entire circumference of the edge of the base substrate 102. Specifically, each of the plurality of second sensors 105A to 105C is arranged along the edge of the bottom surface of the base substrate. The sensor electrode 161 of each of the plurality of second sensors 105A to 105C is along the bottom surface of the base substrate 102. Furthermore, the second sensors 105A to 105C and the first sensors 104A to 104C are arranged alternately at 60° intervals in the circumferential direction. In the following description, the first sensors 104A to 104C and the second sensors 105A to 105C are sometimes collectively referred to as electrostatic capacitance sensors.

[0060] A circuit board 106 is disposed at the center of the upper surface of the base substrate 102. Wiring assemblies 108A to 108C for electrical connection are disposed between the circuit board 106 and the plurality of first sensors 104A to 104C. Wiring assemblies 208A to 208C for electrical connection are disposed between the circuit board 106 and the plurality of second sensors 105A to 105C. The circuit board 106, wiring assemblies 108A to 108C, and wiring assemblies 208A to 208C are covered by a cover 103.

[0061] The first sensor will be described in detail below. Figure 6 This is a 3D diagram representing an example of a sensor. Figure 7 It is along Figure 6 A sectional view cut along line VII-VII. Figure 6 and Figure 7 The first sensor 104 shown is one of a plurality of first sensors 104A to 104C used as actuators 100, and in one example, is configured as a chip-shaped device. Furthermore, in the following description, the XYZ orthogonal coordinate system is appropriately referenced. The X direction represents the forward direction of the first sensor 104, the Y direction represents a direction orthogonal to the X direction, i.e., the width direction of the first sensor 104, and the Z direction represents a direction orthogonal to both the X and Y directions, i.e., the upward direction of the first sensor 104. Figure 7 In the image, the focusing ring FR is shown together with the first sensor 104.

[0062] The first sensor 104 has an electrode 141, a protective electrode 142, a sensor electrode 143, a substrate portion 144, and an insulating region 147.

[0063] The substrate portion 144 is formed, for example, of borosilicate glass or quartz. The substrate portion 144 has an upper surface 144a, a lower surface 144b, and a front end face 144c. A protective electrode 142 is disposed below the lower surface 144b of the substrate portion 144 and extends along the X and Y directions. Furthermore, an electrode 141 is disposed below the protective electrode 142, separated by an insulating region 147, and extends along the X and Y directions. The insulating region 147 is formed, for example, of SiO2, SiN, Al2O3, or polyimide.

[0064] The front end face 144c of the substrate portion 144 is formed in a stepped shape. The lower portion 144d of the front end face 144c protrudes further toward the focusing ring FR than the upper portion 144u of the front end face 144c. The sensor electrode 143 extends along the upper portion 144u of the front end face 144c. In an exemplary embodiment, the upper portion 144u and the lower portion 144d of the front end face 144c are each curved surfaces with a predetermined curvature. That is, the upper portion 144u of the front end face 144c has a certain curvature at any position, and the curvature of the upper portion 144u is the reciprocal of the distance between the central axis AX100 of the actuator 100 and the upper portion 144u of the front end face 144c. Furthermore, the lower portion 144d of the front end face 144c has a certain curvature at any position of the lower portion 144d, and the curvature of the lower portion 144d is the reciprocal of the distance between the central axis AX100 of the actuator 100 and the lower portion 144d of the front end face 144c.

[0065] The sensor electrode 143 is disposed along the upper portion 144u of the front end face 144c. In an exemplary embodiment, the front surface 143f of the sensor electrode 143 is also a curved surface. That is, the front surface 143f of the sensor electrode 143 has a certain curvature at any position on the front surface 143f, and the curvature is the reciprocal of the distance between the central axis AX100 of the actuator 100 and the front surface 143f.

[0066] When the first sensor 104 is used as a sensor for the actuator 100, as described later, electrode 141 is connected to wiring 181, protection electrode 142 is connected to wiring 182, and sensor electrode 143 is connected to wiring 183.

[0067] In the first sensor 104, the sensor electrode 143 is shielded from the lower part of the first sensor 104 by the electrode 141 and the protective electrode 142. Therefore, according to this first sensor 104, the electrostatic capacitance can be measured with high directivity in a specific direction, that is, in the direction (X direction) in which the front surface 143f of the sensor electrode 143 faces.

[0068] The second sensor will be described in detail below. Figure 8 yes Figure 5The image shows a partial enlarged view, illustrating a second sensor. The second sensor 105 has a sensor electrode 161. The edges of the sensor electrode 161 are partially arc-shaped. That is, the sensor electrode 161 has a planar shape defined by an inner edge 161a and an outer edge 161b, which are two arcs with different radii centered on the central axis AX100. The radially outer outer edge 161b of the respective sensor electrodes 161 of the plurality of second sensors 105A to 105C extends on a common circle. Furthermore, the radially inner inner edge 161a of the respective sensor electrodes 161 of the plurality of second sensors 105A to 105C extends on other common circles. The curvature of a portion of the edge of the sensor electrode 161 coincides with the curvature of the edge of the electrostatic chuck ESC. In an exemplary embodiment, the curvature of the outer edge 161b forming the radially outer edge of the sensor electrode 161 coincides with the curvature of the edge of the electrostatic chuck ESC. In addition, the center of curvature of the outer edge 161b, that is, the center of the circle on which the outer edge 161b extends, shares the central axis AX100.

[0069] In one exemplary embodiment, the second sensor 105 further includes a protective electrode 162 surrounding the sensor electrode 161. The protective electrode 162 is frame-shaped and surrounds the sensor electrode 161 throughout its circumference. The protective electrode 162 and the sensor electrode 161 are separated from each other such that an insulating region 164 is located between the protective electrode 162 and the sensor electrode 161. Furthermore, in one exemplary embodiment, the second sensor 105 also includes an electrode 163 surrounding the protective electrode 162 on the outside of the protective electrode 162. The electrode 163 is frame-shaped and surrounds the protective electrode 162 throughout its circumference. The protective electrode 162 and the electrode 163 are separated from each other such that an insulating region 165 is located between the protective electrode 162 and the electrode 163.

[0070] The structure of circuit board 106 will be described below. Figure 9 This is a diagram illustrating the structure of the circuit board of the measuring device. The circuit board 106 includes a high-frequency oscillator 171, multiple C / V conversion circuits 172A-172C, multiple C / V conversion circuits 272A-272C, an A / D converter 173, a processor 174, a storage device 175, a communication device 176, and a power supply 177. In one example, the arithmetic unit consists of the processor 174, the storage device 175, etc. Furthermore, the circuit board 106 includes a temperature sensor 179. The temperature sensor 179 outputs a signal corresponding to the detected temperature to the processor 174. For example, the temperature sensor 179 can acquire the temperature of the ambient environment surrounding the actuator 100.

[0071] Each of the plurality of first sensors 104A to 104C is connected to the circuit board 106 via a corresponding wiring group among the plurality of wiring groups 108A to 108C. Furthermore, each of the plurality of first sensors 104A to 104C is connected to a corresponding C / V conversion circuit among the plurality of C / V conversion circuits 172A to 172C via several wires included in its corresponding wiring group. Each of the plurality of second sensors 105A to 105C is connected to the circuit board 106 via a corresponding wiring group among the plurality of wiring groups 208A to 208C. Furthermore, each of the plurality of second sensors 105A to 105C is connected to a corresponding C / V conversion circuit among the plurality of C / V conversion circuits 272A to 272C via several wires included in its corresponding wiring group. The following describes a first sensor 104 with the same structure as each of the first sensors 104A to 104C, a wiring group 108 with the same structure as each of the wiring groups 108A to 108C, and a C / V conversion circuit 172 with the same structure as each of the C / V conversion circuits 172A to 172C. Furthermore, a second sensor 105 with the same structure as each of the second sensors 105A to 105C, a wiring group 208 with the same structure as each of the wiring groups 208A to 208C, and a C / V conversion circuit 272 with the same structure as each of the C / V conversion circuits 272A to 272C will be described.

[0072] Wiring assembly 108 includes wirings 181 to 183. One end of wiring 181 is connected to electrode 141. Wiring 181 is connected to the ground potential line GL connected to the ground G on circuit board 106. Alternatively, wiring 181 can be connected to the ground potential line GL via switch SWG. Wiring 182 has one end connected to protection electrode 142 and the other end connected to C / V conversion circuit 172. Wiring 183 has one end connected to sensor electrode 143 and the other end connected to C / V conversion circuit 172.

[0073] Wiring assembly 208 includes wirings 281 to 283. One end of wiring 281 is connected to electrode 163. Wiring 281 is connected to the ground potential line GL connected to the ground G on circuit board 106. Alternatively, wiring 281 can be connected to the ground potential line GL via switch SWG. Wiring 282 has one end connected to the protection electrode 162 and the other end connected to the C / V conversion circuit 272. Wiring 283 has one end connected to the sensor electrode 161 and the other end connected to the C / V conversion circuit 272.

[0074] The high-frequency oscillator 171 is configured to be connected to a power source 177, such as a battery, and receives power from the power source 177 to generate a high-frequency signal. The power source 177 is also connected to a processor 174, a storage device 175, and a communication device 176. The high-frequency oscillator 171 has multiple output lines. The high-frequency oscillator 171 provides the generated high-frequency signal to wirings 182 and 183, and wirings 282 and 283, via the multiple output lines. Therefore, the high-frequency oscillator 171 is electrically connected to the protection electrode 142 and the sensor electrode 143 of the first sensor 104, and the high-frequency signal from the high-frequency oscillator 171 is provided to the protection electrode 142 and the sensor electrode 143. Furthermore, the high-frequency oscillator 171 is electrically connected to the sensor electrode 161 and the protection electrode 162 of the second sensor 105, and the high-frequency signal from the high-frequency oscillator 171 is provided to the sensor electrode 161 and the protection electrode 162.

[0075] A wiring 182 connected to the protection electrode 142 and a wiring 183 connected to the sensor electrode 143 are connected to the input of the C / V conversion circuit 172. That is, the protection electrode 142 and the sensor electrode 143 of the first sensor 104 are connected to the input of the C / V conversion circuit 172. Furthermore, the sensor electrode 161 and the protection electrode 162 are connected to the input of the C / V conversion circuit 272. The C / V conversion circuits 172 and 273 are configured to generate and output a voltage signal with an amplitude corresponding to the potential difference at their inputs. The C / V conversion circuit 172 generates a voltage signal corresponding to the electrostatic capacitance formed by the corresponding first sensor 104. That is, the larger the electrostatic capacitance of the sensor electrode connected to the C / V conversion circuit 172, the larger the voltage of the voltage signal output by the C / V conversion circuit 172. Similarly, the larger the electrostatic capacitance of the sensor electrode connected to the C / V conversion circuit 272, the larger the voltage of the voltage signal output by the C / V conversion circuit 272.

[0076] The input of A / D converter 173 is connected to the outputs of C / V conversion circuit 172 and C / V conversion circuit 272. Furthermore, A / D converter 173 is connected to processor 174. A / D converter 173 is controlled by control signals from processor 174 to convert the output signals (voltage signals) of C / V conversion circuit 172 and C / V conversion circuit 272 into digital values, which are then output as detection values ​​to processor 174.

[0077] A storage device 175 is connected to the processor 174. The storage device 175 is a storage device such as a volatile memory, configured, for example, to store measurement data. Furthermore, another storage device 178 is connected to the processor 174. The storage device 178 is a storage device such as a non-volatile memory, storing, for example, a program that is read and executed by the processor 174.

[0078] Communication device 176 is a communication device that conforms to any wireless communication standard. For example, communication device 176 conforms to Bluetooth (registered trademark). Communication device 176 is configured to wirelessly transmit measurement data stored in storage device 175.

[0079] The processor 174 is configured to control various parts of the execution device 100 by executing the aforementioned program. For example, the processor 174 controls the supply of high-frequency signals from the high-frequency oscillator 171 to the protection electrode 142, sensor electrode 143, sensor electrode 161, and protection electrode 162. Furthermore, the processor 174 controls the power supply from the power supply 177 to the storage device 175 and the power supply from the power supply 177 to the communication device 176, etc. Moreover, by executing the aforementioned program, the processor 174 acquires the measured values ​​of the first sensor 104 and the second sensor 105 based on the detection value input from the A / D converter 173. In one embodiment, when the detection value output from the A / D converter 173 is set to X, the processor 174 acquires the measured value based on the detection value, so that the measured value is a value proportional to (a·X+b). Here, a and b are constants that change according to circuit states, etc. The processor 174 may, for example, have a defined expression (function) such that the measured value is a value proportional to (a·X+b).

[0080] In the actuator 100 described above, when the actuator 100 is positioned in the area surrounded by the focusing ring FR, a plurality of sensor electrodes 143 and a protective electrode 142 are positioned opposite the inner edge of the focusing ring FR. A measured value generated based on the potential difference between the signals of these sensor electrodes 143 and the signals of the protective electrode 142 represents the electrostatic capacitance reflecting the distance between each of the plurality of sensor electrodes 143 and the focusing ring FR. Furthermore, the electrostatic capacitance C is represented by C = εS / d, where ε is the dielectric constant of the medium between the front surface 143f of the sensor electrode 143 and the inner edge of the focusing ring FR, S is the area of ​​the front surface 143f of the sensor electrode 143, and d can be considered as the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the focusing ring FR.

[0081] Therefore, according to the actuator 100, measurement data reflecting the relative positional relationship between the actuator 100 and the focusing ring FR, which simulates the workpiece W, can be obtained. For example, the greater the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the focusing ring FR, the smaller the multiple measurement values ​​obtained by the actuator 100. Therefore, the offset of each sensor electrode 143 of the focusing ring FR in each radial direction can be determined based on the measured value representing the electrostatic capacitance of each sensor electrode 143 of the first sensors 104A to 104C. Then, the transport position of the actuator 100 can be determined from the offset of each sensor electrode 143 of the first sensors 104A to 104C in each radial direction.

[0082] Furthermore, with the actuator 100 mounted on the electrostatic chuck ESC, multiple sensor electrodes 161 and protective electrodes 162 are positioned opposite the electrostatic chuck ESC. As described above, the electrostatic capacitance C is represented by C = εS / d. ε is the dielectric constant of the medium between the sensor electrodes 161 and the electrodes of the electrostatic chuck ESC. d is the distance between the sensor electrodes 161 and the electrodes of the electrostatic chuck ESC. S can be considered as the area where the sensors 161 and the electrodes of the electrostatic chuck ESC overlap in a top view. The area S varies depending on the relative positional relationship between the electrodes of the actuator 100 and the electrostatic chuck ESC. Therefore, according to the actuator 100, measurement data reflecting the relative positional relationship between the actuator 100 and the electrostatic chuck ESC, simulating the workpiece W, can be obtained.

[0083] In one example, when the actuator 100 is conveyed to a predetermined conveying position, i.e., the center of the electrostatic chuck ESC coincides with the center of the actuator 100, the outer edge 161b of the sensor electrode 161 may coincide with the edge of the electrostatic chuck ESC. In this case, for example, when the sensor electrode 161 is offset radially outward relative to the electrostatic chuck ESC due to the conveying position of the actuator 100 shifting from the predetermined conveying position, the area S becomes smaller. That is, the electrostatic capacitance measured by the sensor electrode 161 is smaller than the electrostatic capacitance when the actuator 100 is conveyed to the predetermined conveying position. Therefore, the offset of each sensor electrode 161 in each radial direction of the electrostatic chuck ESC can be determined based on the measured value representing the electrostatic capacitance of each sensor electrode 161 of the second sensors 105A to 105C. Then, the conveying position of the actuator 100 can be determined from the offset of each sensor electrode 161 of the second sensors 105A to 105C in each radial direction.

[0084] Furthermore, the circuit board 106 has an acceleration sensor 190. The acceleration sensor 190 detects the transport action of the actuator 100 within the processing system 1 by detecting the acceleration applied to the actuator 100. In one example, the acceleration sensor 190 is configured to include at least a first acceleration sensor 190X and a second acceleration sensor 190Y.

[0085] Figure 10 This is a schematic diagram illustrating the acceleration sensor 190 disposed in the actuator 100. Figure 10 The diagram shows a schematic top view of the actuator 100 as viewed from above. Figure 10 The Y-axis passes through the center of the actuator 100 and the groove 110N. The X-axis is orthogonal to the Y-axis and passes through the center of the actuator 100. The X-axis and Y-axis can be axes that are orthogonal (intersecting) to each other along the plane of the base plate.

[0086] The first accelerometer 190X is configured to detect acceleration in the X-axis direction, and the second accelerometer 190Y is configured to detect acceleration in the Y-axis direction. Therefore, when the actuator 100 is in a horizontal state, acceleration in a first direction along the horizontal direction can be detected by the first accelerometer 190X. Furthermore, acceleration in a second direction along the horizontal direction that intersects with the first direction can be detected by the second accelerometer 190Y.

[0087] In one example, when an acceleration applied along the positive X-axis is detected, the first accelerometer 190X outputs a positive detection value corresponding to the magnitude of the acceleration; when an acceleration applied along the negative X-axis is detected, the first accelerometer 190X outputs a negative detection value corresponding to the magnitude of the acceleration. Similarly, when an acceleration applied along the positive Y-axis is detected, the second accelerometer 190Y outputs a positive detection value corresponding to the magnitude of the acceleration; when an acceleration applied along the negative Y-axis is detected, the second accelerometer 190Y outputs a negative detection value corresponding to the magnitude of the acceleration.

[0088] In one example of the actuator 100, the detection values ​​from the first accelerometer 190X and the second accelerometer 190Y are input to the processor 174. The processor 174 sums (synthesizes) the detection values ​​from the first accelerometer 190X and the second accelerometer 190Y, and derives a sum value (synthesized value). The processor 174 can determine whether the actuator 100 is being transported by the transport device based on the sum value.

[0089] Along Figure 10When the actuator 100 is transported along the X-axis directions D1 and D2 as shown, no acceleration is substantially detected in the second acceleration sensor 190Y. Therefore, the processor 174 can set only the detection value of the first acceleration sensor 190X as the total value. Similarly, along... Figure 10 When the actuator 100 is transported along the Y-axis directions D3 and D4, the processor 174 can set only the detection value of the second accelerometer 190Y as the total value. Furthermore, when the actuator is transported along the positive directions D5 (X-axis and Y-axis) and the negative directions D6 (X-axis and Y-axis), the total value can be obtained by directly adding the detection values.

[0090] When the actuator 100 is transported in direction D7 (X-axis positive, Y-axis negative) and direction D8 (X-axis negative, Y-axis positive), the detected values ​​of the first acceleration sensor 190X and the second acceleration sensor 190Y have opposite signs. Therefore, the total value obtained by subtracting the detected value of the second acceleration sensor 190Y from the detected value of the first acceleration sensor 190X can be set as the total value. Furthermore, as long as the detected values ​​of the first acceleration sensor 190X and the second acceleration sensor 190Y do not cancel each other out when totaled, the total value obtained by subtracting the detected value of the first acceleration sensor 190X from the detected value of the second acceleration sensor 190Y can also be set as the total value.

[0091] As an example, if one of the two detected values ​​input to processor 174 is substantially zero, processor 174 can determine that execution device 100 delivers and calculates the total value in directions D1, D2, D3, and D4. Furthermore, if the two detected values ​​input to processor 174 have the same sign, processor 174 can determine that execution device 100 delivers and calculates the total value in directions D5 and D6. And, if the two detected values ​​input to processor 174 have different signs, processor 174 can determine that execution device 100 delivers and calculates the total value in directions D7 and D8.

[0092] Next, the motion control in the actuator 100 will be explained. Figure 11This is a block diagram representing the circuit of the power control system. In an example actuator 100, the power supply from the power supply 177 to the sensor output acquisition circuit (operating device) 195 is controlled based on the acceleration measured by the accelerometer 190. The sensor output acquisition circuit 195 is a circuit for acquiring the output signal from the electrostatic capacitance sensor, and includes the aforementioned high-frequency oscillator 171 and C / V conversion circuits 172 and 272. The C / V conversion circuits 172 and 272 include amplifier circuits 172a and 272a and filter circuits 172b and 272b. The amplifier circuits 172a and 272a amplify the potential difference between the signals from the sensor electrodes 143 and 161 and the signals from the protection electrodes 142 and 162 that are input to the C / V conversion circuits 172 and 272. Furthermore, the filter circuits 172b and 272b reduce the noise of the voltage signals output from the amplifier circuits 172a and 272a. In one example, amplifier circuits 172a and 272a and filter circuits 172b and 272b all include operational amplifiers and operate by power supplied from power source 177.

[0093] Power supply 177 and sensor output acquisition circuit 195 are electrically connected to each other via switch 198. Switch 198 has the function of switching the path between power supply 177 and sensor output acquisition circuit 195 to an electrically connected state and an electrically disconnected state. When switch 198 is connected, power is supplied from power supply 177 to sensor output acquisition circuit 195. That is, when switch 198 is connected, the first sensors 104A-104C and the second sensors 105A-105C operate, and electrostatic capacitance can be acquired. Furthermore, when switch 198 is disconnected, the power supply from power supply 177 to sensor output acquisition circuit 195 is stopped. Switch 198 can be, for example, an electronic switch such as a transistor.

[0094] The processor 174 controls the connection and disconnection of the switch 198. As described above, in one example, the actuator 100 performs electrostatic capacitance measurement and delivery position measurement while mounted on the electrostatic chuck ESC. Therefore, after the actuator 100 is mounted on the electrostatic chuck ESC, the processor 174 controls the switch 198 from the disconnected state to the connected state.

[0095] In one example, processor 174 measures the elapsed time after the acceleration measured by accelerometer 190 reaches a value within a specified reference range. For example, processor 174 can measure the elapsed time using a built-in timer. The reference range for acceleration is a range excluding the values ​​of acceleration applied to the actuator 100 being conveyed by conveying devices TU1 and TU2. That is, if acceleration exceeding the reference range is detected, it is assumed that the actuator 100 is being conveyed by conveying devices TU1 and TU2. For example, the reference range can be defined as the range from a positive threshold to a negative threshold. As an example, the reference range for acceleration can be -0.005 m / s². 2 Up to 0.005m / s 2 The range between them.

[0096] When a predetermined time has elapsed while the acceleration does not exceed a positive or negative threshold, the processor 174 determines that the actuator 100 is placed on the electrostatic chuck (stage) ESC of the processing system 1, and controls the wiring between the power supply 177 and the sensor output acquisition circuit 195 to be electrically connected. That is, the processor 174 causes the actuator 100 to perform the acquisition of electrostatic capacitance (prescribed action). For example, the processor 174 can be controlled such that when more than 60 seconds have elapsed while the measured acceleration is within the reference range, the switch 198 is connected.

[0097] Figure 12 This is a flowchart illustrating an example of the operation of an actuator. Figure 12 In the example, the following action is shown: the actuator 100 is transported to the electrostatic chuck ESC (stage) by the processing system 1, and position information is obtained based on the electrostatic capacitance obtained on the electrostatic chuck ESC. For example, the transport device of the processing system 1 is controlled as follows: the actuator 100, which is housed in a dedicated FOU P (container 4a to 4d), is placed on the electrostatic chuck ESC, and after a certain period of time, the actuator 100 is returned from the electrostatic chuck ESC to the FOU P.

[0098] exist Figure 12In this example, firstly, acceleration measurement is initiated by the actuator 100 (step ST1). For example, the actuator 100 can be started while housed in a dedicated FOUP connected to the processing system 1. If the actuator 100 is started, the acceleration sensor 190 is activated, thereby acquiring a signal from the acceleration sensor 190 via the processor 174. Furthermore, even when the actuator 100 is started, the switch 198 is initially in the off state. That is, the power supply from the power supply 177 to the sensor output acquisition circuit 195 is stopped. In step ST1, the control unit MC controls the processing system 1 to cause the conveying devices TU1 and TU2 to convey the actuator 100 from the FOUP to the electrostatic chuck ESC within the processing module PM.

[0099] Next, it is determined whether the acceleration measured by the accelerometer 190 exceeds the reference range (step ST2). When the actuator 100 is placed inside the FOUP, the acceleration detected by the accelerometer 190 of the actuator 100 is within the reference range. On the other hand, if the conveying of the actuator 100 has started, the acceleration measured by the accelerometer 190 exceeds the reference range. In step ST2, if the measurement value of the accelerometer 190 is within the reference range, it is determined that the conveying of the conveying device has not yet started, and step ST2 is repeated.

[0100] In step ST2, if it is determined that the acceleration measured by the acceleration sensor 190 exceeds the reference range, the timer of the processor 174 is reset and enters a standby state for measuring the elapsed time after the acceleration is within the reference range (step ST3).

[0101] Next, it is determined whether the acceleration measured by the accelerometer 190 is within the reference range (step ST4). The acceleration exceeds the reference range while the transport actuator 100 is in operation. Therefore, step ST4 is repeated during the transport actuator 100 operation. On the other hand, when transport ends and the actuator 100 is placed on the electrostatic chuck ESC, no acceleration generated by transport is applied to the actuator 100. That is, in step ST4, it is determined that the measurement value based on the accelerometer 190 is within the reference range.

[0102] If the acceleration is within the reference range, the processor 174 starts its timer and measures the elapsed time after the acceleration is within the reference range (step ST5). Furthermore, depending on the transport conditions, the following may be considered: due to reasons such as the actuator 100 being temporarily stationary during transport, the acceleration applied to the actuator 100 may be within the reference range. In this case, the actuator 100 is actually being transported, so it is necessary to avoid determining that the actuator 100 is placed on the electrostatic chuck ESC. Therefore, during the measurement of the elapsed time, it is repeatedly determined whether the acceleration is within the reference range (step ST6). Thus, if the acceleration exceeds the reference range, the process returns to step ST3, and the timer is reset. That is, the measurement of the elapsed time based on the timer stops, and the timer returns to its initial state.

[0103] In step ST6, if the acceleration is determined to be within the reference range, it is then determined whether the elapsed time after the acceleration is within the reference range exceeds a set time (step ST7). If the elapsed time does not exceed the set time, the process returns to step ST6. If the elapsed time exceeds the set time, the processor 174 ends the timer (step ST8) and activates the electrostatic capacitance sensor (step ST9). That is, the processor 174 sets the switch 198 to the connected state and supplies power from the power supply 177 to the sensor output acquisition circuit 195.

[0104] Next, the measurement of the conveying position of the execution device 100 is started using the method described above (step ST10), and the electrostatic capacitance value is measured (step ST11). During the electrostatic capacitance measurement, it is determined whether the acceleration measured by the acceleration sensor 190 exceeds the reference range (step ST12). That is, it is determined whether the process of conveying the execution device 100 from the electrostatic chuck ESC to the FOUP via the conveying devices TU1 and TU2 has started. If it is determined that the acceleration exceeds the reference range, the electrostatic capacitance sensor is stopped (step ST13). That is, the switch 198 is turned off, and the power supply from the power supply 177 to the sensor output acquisition circuit 195 is stopped. Then, data indicating the result of the measured position measurement is sent to an external computer, for example, and the operation ends.

[0105] As explained above, in one exemplary embodiment, an execution device 100 is provided, which is conveyed to conveying devices TU1 and TU2 provided in a processing system 1 to perform a predetermined action. The execution device 100 includes a first sensor 104 and a second sensor 105 as an actuation device, an acceleration sensor 190, and a processor 174. The acceleration sensor 190 measures the acceleration applied to the execution device 100. The processor 174 measures the elapsed time after the acceleration measured by the acceleration sensor 190 reaches a value within a reference range. When a predetermined time has elapsed while the acceleration remains within the reference range, the execution device 100 supplies power to the sensor output acquisition circuit 195. That is, it performs a measurement based on the electrostatic capacitance of the first sensor 104 and the second sensor 105.

[0106] In the aforementioned actuator 100, the acceleration applied to the actuator 100 can be detected by the acceleration sensor 190. For example, when the actuator 100 is conveyed to the conveying devices TU1 and TU2 of the processing system 1, acceleration is applied to the actuator 100 according to the speed change. Furthermore, when the actuator 100 is placed on the electrostatic chuck ESC, the actuator 100 is stationary and no acceleration is applied to the actuator 100.

[0107] The processor 174 can determine whether an acceleration generated by the movement of the conveying devices TU1 and TU2 is applied to the actuator 100. If a predetermined time has elapsed while the acceleration does not exceed a reference range (i.e., the acceleration generated by the movement is not applied to the actuator 100), the processor 174 can determine that the actuator 100 is mounted on the electrostatic chuck ESC. Based on this determination, the actuator 100 performs a measurement based on the electrostatic capacitance of the first sensor 104 and the second sensor 105. In this way, the actuator 100 can automatically perform a predetermined action.

[0108] When measuring electrostatic capacitance using the first sensor 104 and the second sensor 105, power needs to be supplied to the sensor output acquisition circuit 195. In the aforementioned actuator 100, during transport based on the transport devices TU1 and TU2, the power supply to the sensor output acquisition circuit 195 is stopped. Therefore, power consumption in the actuator 100 can be reduced.

[0109] In one exemplary embodiment, if the acceleration exceeds a reference range within a specified time from the start of the elapsed time measurement, the processor 174 may stop the elapsed time measurement. For example, in the case of a temporary stop in the conveying of the actuator 100 based on the conveying devices TU1, TU2, the processor 174 starts a timer and begins the elapsed time measurement. Even in this case, stopping the elapsed time measurement when the conveying resumes prevents erroneous determination that the actuator 100 has been conveyed to the electrostatic chuck ESC.

[0110] In one exemplary embodiment, if the acceleration exceeds a reference range after the electrostatic capacitance measurement is performed using the first sensor 104 and the second sensor 105, the processor 174 determines that the actuator 100 has been removed from the electrostatic chuck ESC. In this case, the power supply to the sensor output acquisition circuit 195 is stopped to halt the measurement of electrostatic capacitance based on the first sensor 104 and the second sensor 105. By stopping the power supply to the sensor output acquisition circuit 195 as the actuator 100 is removed, an increase in power consumption can be suppressed.

[0111] In one exemplary embodiment, the acceleration sensor 190 includes a first acceleration sensor 190X and a second acceleration sensor 190Y. The first acceleration sensor 190X measures a first acceleration in a first direction along the horizontal direction. The second acceleration sensor 190Y measures a second acceleration in a second direction along the horizontal direction orthogonal to the first direction. By including the first acceleration sensor 190X and the second acceleration sensor 190Y, the acceleration applied to the actuator 100 by the conveying devices TU1 and TU2 can be reliably detected.

[0112] In one exemplary implementation, the reference range can be -0.005 m / s. 2 Up to 0.005m / s 2 The range between. In this structure, it is possible to appropriately determine whether the actuator 100 is conveyed by the conveying devices TU1 and TU2.

[0113] In one exemplary embodiment, the set time for step ST7 can be 60 seconds or more. For example, even if the transport of the actuator 100 based on the transport devices TU1 and TU2 is temporarily stopped, in a typical semiconductor manufacturing apparatus, the transport can be restarted before 60 seconds have elapsed. Therefore, even if the processor 174 erroneously starts the timer, it can prevent the erroneous determination that the actuator 100 has been transported to the electrostatic chuck ESC can be prevented. In addition, the transport device of the processing system 1 is controlled such that after the actuator 100 is placed on the electrostatic chuck ESC, after a certain period of time exceeding the aforementioned set time, the actuator 100 is returned from the electrostatic chuck ESC to the FOUP.

[0114] In one exemplary embodiment, the actuator 100 can perform the measurement of electrostatic capacitance. Furthermore, the actuator 100 can be an action device that performs a predetermined action, including multiple light sources emitting light of different wavelengths, a camera capturing images of the area around the actuator, etc. Figure 12 After step ST8, power is supplied to the multiple light sources, and the camera device can also be activated.

[0115] The exemplary embodiments have been described above, but are not limited to the above exemplary embodiments. Various omissions, substitutions and changes can be made.

[0116] For example, the actuator 100 may also include a third acceleration sensor that detects acceleration in the Z-axis direction, which is orthogonal to the X-axis and Y-axis.

[0117] Furthermore, the acceleration output by the accelerometer can be represented by an absolute value. For example, the combined value of the first accelerometer 190X and the second accelerometer 190Y can be the absolute value of the vector sum of the acceleration measured by the first accelerometer 190X and the acceleration measured by the second accelerometer 190Y. In this case, the reference range of acceleration can be defined as a range from zero to a positive threshold.

[0118] As can be understood from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the invention is not limited to the various embodiments disclosed in this specification, and the true scope and spirit are shown in the appended claims.

Claims

1. An actuator, which is conveyed to a transport device disposed in a semiconductor manufacturing apparatus to perform a predetermined action, the actuator comprising: An actuating device for performing the prescribed action; An accelerometer sensor capable of measuring the acceleration applied to the actuator; and The computing device measures the elapsed time after the acceleration measured by the acceleration sensor becomes a value within a reference range. When a predetermined time has elapsed while the acceleration remains within the reference range, it determines that the execution device is placed on the stage of the semiconductor manufacturing apparatus and causes the actuation device to perform the predetermined action.

2. The actuator according to claim 1, wherein, If the acceleration exceeds the reference range within the specified time period from the start of the elapsed time measurement, the computing device stops the elapsed time measurement and returns to the initial state.

3. The actuator according to claim 1 or 2, wherein, The acceleration sensor includes: The first acceleration sensor is capable of measuring the first acceleration in the first direction along the horizontal direction; and The second acceleration sensor is capable of measuring a second acceleration in a second direction orthogonal to the first direction along the horizontal direction. The acceleration is the combined value of the first acceleration and the second acceleration.

4. The actuator according to claim 1 or 2, wherein, If, after the actuation device performs a predetermined action via the computing device, the acceleration exceeds the reference range, the computing device determines that the actuation device has been removed from the stage of the semiconductor manufacturing apparatus and stops the predetermined action of the actuation device.

5. The actuator according to claim 1 or 2, wherein, The reference range is -0.005 m / s 2 Up to 0.005m / s 2 The range between them.

6. The actuator according to claim 1 or 2, wherein, The specified time is 60 seconds or more.

7. The actuator according to claim 1 or 2, wherein, The prescribed action is the measurement of electrostatic capacitance.

8. An execution method that causes an execution device conveyed to a transport device disposed in a semiconductor manufacturing apparatus to perform a predetermined action, the execution method comprising: A process of measuring the time elapsed after the acceleration applied to the actuator reaches a value within a reference range by measuring the acceleration applied to the actuator; and When a predetermined time has elapsed since the start of the time measurement, provided that the acceleration does not exceed the reference range, it is determined that the actuator is placed on the stage of the semiconductor manufacturing apparatus and performs the predetermined action.

9. The execution method according to claim 8, further comprising the following steps: If the acceleration exceeds the reference range within the specified time period from the start of the time elapsed measurement, the time elapsed measurement is stopped and the system returns to the initial state.

10. The execution method according to claim 8 or 9, wherein, The acceleration is the combined value of the first acceleration along the first horizontal direction and the second acceleration along the second horizontal direction orthogonal to the first horizontal direction.

11. The execution method according to claim 8 or 9, further comprising the following steps: If the acceleration exceeds the reference range after the actuator performs the prescribed action, it is determined that the actuator has been removed from the stage of the semiconductor manufacturing apparatus, and the prescribed action is stopped.

12. The execution method according to claim 8 or 9, wherein, The reference range is -0.005 m / s 2 Up to 0.005m / s 2 The range between them.

13. The execution method according to claim 8 or 9, wherein, The specified time is 60 seconds or more.

14. The execution method according to claim 8 or 9, wherein, The prescribed action is the measurement of electrostatic capacitance.

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