Apparatus and method for processing a substrate

By optimizing the pressure and flow balance of the fluid supply and discharge units through the controller, the problems of poor flowability and particle generation in the supercritical drying process were solved, and a high-efficiency and low-pollution substrate drying process was achieved.

CN114203580BActive Publication Date: 2026-06-09SYSTEM ENGINEERING MEGA SOLUTION CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SYSTEM ENGINEERING MEGA SOLUTION CO LTD
Filing Date
2021-09-02
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In the supercritical drying process, the poor flow of the drying gas in the processing chamber leads to the ineffective removal of organic solvents, and frequent valve operation generates particles and increases processing time.

Method used

A controller is used to control the fluid supply and discharge unit. By setting pressure and flow balance, the dry fluid is ensured to flow on the substrate, reducing particle generation and optimizing the pressure change process.

Benefits of technology

It improves drying efficiency, reduces processing time, reduces particulate contamination, and optimizes the fluid transport process.

✦ Generated by Eureka AI based on patent content.

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Abstract

An apparatus for processing a substrate includes a main body having an internal space in which a substrate is dried by a drying fluid in a supercritical state, a fluid supply unit that supplies the drying fluid into the internal space, a fluid discharge unit that releases the drying fluid from the internal space, and a controller. The controller controls the fluid supply unit and the fluid discharge unit to perform a pressure increasing step of increasing a pressure in the internal space to a set pressure, and a flow step of generating a flow of a drying gas in the internal space by releasing the drying fluid from the internal space by the fluid discharge unit while supplying the drying fluid into the internal space by the fluid supply unit.
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Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to apparatus and methods for processing substrates. Background Technology

[0002] To manufacture semiconductor devices, desired patterns are formed on a substrate, such as a wafer, using various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Various process liquids and gases are used in these processes, and particles and process byproducts are generated during the process. Cleaning processes are performed before and after the actual process to remove these particles and process byproducts from the substrate.

[0003] In a typical cleaning process, the substrate is treated with chemicals and a rinsing solution, followed by a drying process. As an example of a drying process, a rotary drying process is illustrated, in which the substrate is rotated at high speed to remove residual rinsing solution. However, in the case of a rotary drying process, there is a risk of pattern collapse formed on the substrate.

[0004] Therefore, a supercritical drying process is used as follows: the residual rinsing solution on the substrate is replaced with an organic solvent with low surface tension, such as isopropanol (IPA), and the residual organic solvent on the substrate is removed with a process fluid in a supercritical state. In the supercritical drying process, drying gas is supplied to a sealed processing chamber and heated and pressurized. The temperature and pressure of the drying gas rise to the critical point or higher, and the drying gas undergoes a phase transition to the supercritical state.

[0005] Supercritical drying gases possess high solubility and permeability. That is, when supercritical drying gases are supplied to a substrate, the drying gas easily permeates into the patterns on the substrate, and organic solvents remaining on the substrate readily dissolve in the drying gas. Therefore, organic solvents remaining between the patterns formed on the substrate can be easily removed.

[0006] However, the supercritical drying gas in the processing chamber has low fluidity. Therefore, the supercritical drying gas may not be properly delivered to the substrate. In this case, the organic solvent remaining on the substrate may not be properly removed, or the supercritical drying gas containing dissolved organic solvent may not be properly released out of the processing chamber.

[0007] To solve this problem, a common method is to change the pressure in the processing chamber, such as... Figure 1 As shown. Reference Figure 1In the pressurization step S100, the pressure in the processing chamber is increased to a first pressure CP1. In the processing step S200, the pressure in the processing chamber is repeatedly varied between the first pressure CP1 and a second pressure CP2, which is lower than the first pressure CP1. Subsequently, in the discharge step S300, the pressure in the processing chamber is changed to atmospheric pressure. By repeatedly changing the pressure in the processing chamber in the processing step S200, a flow of supercritical dry gas can be generated in the processing chamber, and the supercritical dry gas can be delivered to the substrate.

[0008] The method of repeatedly changing the pressure in the processing chamber between the first pressure CP1 and the second pressure CP2 is typically performed by repeatedly opening and closing valves installed on the supply line, which supplies dry gas to the processing chamber, and valves installed on the discharge line, which evacuates the internal space of the processing chamber. When the valves are repeatedly opened and closed, particles may be generated in the valves, and these particles may be transported into the processing chamber through the supply line or the discharge line. Furthermore, the method of repeatedly changing the pressure in the processing chamber between the first pressure CP1 and the second pressure CP2 increases the time spent performing processing step S200. This is because there are physical limitations to reducing the time spent increasing or decreasing the pressure in processing step S200. Additionally, when valves are rapidly opened / closed to reduce the time spent increasing or decreasing the pressure, it may not be possible to increase or decrease the pressure properly, and there is a risk of obstructing the flow of the supercritical dry gas. Summary of the Invention

[0009] Embodiments of the present invention provide a substrate processing apparatus and method for effectively processing substrates.

[0010] Furthermore, embodiments of the present invention provide a substrate processing apparatus and method for improving the efficiency of drying substrates.

[0011] Furthermore, embodiments of the present invention provide a substrate processing apparatus and method for reducing the time spent performing the drying process of a dried substrate.

[0012] Furthermore, embodiments of the present invention provide a substrate processing apparatus and method for minimizing impurities such as particulate matter while performing a drying process on a dry substrate.

[0013] The technical problems to be solved by the present invention are not limited to those described above. Those skilled in the art will clearly understand from the following description any other technical problems not mentioned herein.

[0014] According to one embodiment, an apparatus for processing a substrate includes: a body having an internal space in which the substrate is dried by a drying fluid in a supercritical state; a fluid supply unit supplying the drying fluid into the internal space; a fluid discharge unit releasing the drying fluid from the internal space; and a controller. The controller controls the fluid supply unit and the fluid discharge unit to perform: a pressurization step of increasing the pressure of the internal space to a set pressure; and a flow step of generating a flow of the drying gas in the internal space by simultaneously supplying the drying fluid into the internal space by the fluid supply unit and releasing the drying fluid from the internal space by the fluid discharge unit.

[0015] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that the pressure in the internal space is maintained at the set pressure during the execution of the flow step.

[0016] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that, during the execution of the flow step, the amount of dry fluid supplied to the internal space per unit time by the fluid supply unit is the same as the amount of dry fluid released from the internal space per unit time by the fluid discharge unit.

[0017] According to one embodiment, the fluid discharge unit may include: a main discharge line connected to the main body; and a first discharge valve that allows the drying fluid to selectively flow through the main discharge line, and the controller may control the fluid supply unit and the fluid discharge unit such that the first discharge valve remains open during the execution of the flow step.

[0018] According to one embodiment, the fluid discharge unit may further include: a flow line branching from the main discharge line and having the first discharge valve installed thereon; a slow discharge line branching from the main discharge line and having a second discharge valve installed thereon; and a fast discharge line branching from the main discharge line and having a third discharge valve installed thereon, wherein the amount of dry fluid released per unit time through the fast discharge line is greater than the amount of dry fluid released per unit time through the slow discharge line.

[0019] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit to additionally perform: a first discharge step: reducing the pressure in the internal space by releasing the dry fluid in the internal space through the slow discharge line by opening the second discharge valve; and a second discharge step: reducing the pressure in the internal space by opening the third discharge valve through the fast discharge line.

[0020] According to one embodiment, a pressure regulating member can be installed on the flow line to measure the pressure of the drying fluid flowing through the main discharge line and to regulate the pressure in the internal space to the set pressure by adjusting the amount of the drying fluid released through the flow line per unit time.

[0021] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that the flow step is performed for a period of 20 to 65 seconds.

[0022] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that the flow step is performed for a period of 25 to 65 seconds.

[0023] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that the set pressure is in the range of 120 bar to 150 bar.

[0024] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that the set pressure is equal to 150 bar.

[0025] According to one embodiment, an apparatus for processing a substrate includes: a body having an internal space in which the substrate is dried by a drying fluid in a supercritical state; a fluid supply unit configured to supply the drying fluid into the internal space; a fluid discharge unit configured to release the drying fluid from the internal space; and a controller. The fluid discharge unit includes a main discharge line connected to the body; and a first discharge valve that selectively allows the drying fluid to flow through the main discharge line. The controller performs: a pressurization step: increasing the pressure in the internal space to a set pressure; a flow step: maintaining the pressure in the internal space at the set pressure; and a discharge step: decreasing the pressure in the internal space. The controller controls the fluid supply unit and the fluid discharge unit such that the first discharge valve remains open during the flow step.

[0026] According to one embodiment, the controller can control the fluid supply unit and the fluid discharge unit such that during the flow step, the amount of dry fluid supplied by the fluid supply unit per unit time and the amount of dry fluid released per unit time through the main discharge line are the same as each other.

[0027] According to one embodiment, the fluid discharge unit may further include a pressure regulating member configured to regulate the pressure in the internal space to the set pressure based on the pressure of the dry fluid flowing through the main discharge line during the flow step.

[0028] According to one embodiment, the main discharge line may branch into branch lines, and the branch lines may include: a discharge line that reduces the pressure in the internal space; and a flow line having the first discharge valve and the pressure regulating member mounted thereon.

[0029] According to one embodiment, the fluid supply unit may include: a first supply line supplying the drying fluid from above the substrate supported in the internal space; and a second supply line supplying the drying fluid from below the substrate supported in the internal space.

[0030] According to one embodiment, the fluid supply unit may include: a first supply line supplying the drying fluid from a side of the substrate supported in the internal space; and a second supply line configured to supply the drying fluid from below the substrate supported in the internal space.

[0031] According to one embodiment, an apparatus for processing a substrate includes: a body having an internal space in which an organic solvent remaining on the substrate is dried by a drying fluid in a supercritical state; a fluid supply unit supplying the drying fluid into the internal space; a fluid discharge unit releasing the drying fluid from the internal space; and a controller. The controller performs: a pressurization step: increasing the pressure in the internal space to a set pressure by supplying the drying fluid into the internal space by the fluid supply unit; a flow step: generating a flow of the drying gas in the internal space by releasing the drying fluid from the internal space by the fluid discharge unit while the fluid supply unit is supplying the drying fluid into the internal space; and a discharge step: reducing the pressure in the internal space by releasing the drying fluid from the internal space by the fluid discharge unit. The controller controls the fluid supply unit and the fluid discharge unit such that, during the execution of the flow step, the amount of dry fluid supplied to the internal space by the fluid supply unit per unit time is the same as the amount of dry fluid released from the internal space by the fluid discharge unit per unit time.

[0032] According to one embodiment, the fluid discharge unit may include: a main discharge line connected to the main body and evacuating the internal space; a discharge line branching from the main discharge line and reducing the pressure in the internal space; and a flow line branching from the main discharge line and having a pressure regulating member and a first discharge valve mounted thereon, wherein the pressure regulating member regulates the pressure in the internal space to a set pressure based on the pressure of the dried fluid flowing through the main discharge line. The controller may control the fluid supply unit and the fluid discharge unit such that, during the flow step, the first discharge valve remains open to release the dried fluid through the main discharge line and the flow line.

[0033] According to one embodiment, the discharge line may include: a fast discharge line having a third discharge valve mounted thereon; and a slow discharge line having a second discharge valve mounted thereon, wherein the amount of the dried fluid released per unit time through the slow discharge line is less than the amount of the dried fluid released per unit time through the fast discharge line. The controller may control the second discharge valve and the third discharge valve such that, in the discharge step, after the dried fluid is released through the slow discharge line, the dried fluid is released through the fast discharge line.

[0034] According to one embodiment, a method for processing a substrate includes: a liquid treatment step: liquid treating the substrate by supplying an organic solvent to the substrate; a transfer step: transferring the substrate with residual organic solvent thereon into a body (the body having an internal space for drying the substrate therein); and a drying step: drying the substrate by supplying a drying fluid in a supercritical state to the substrate in the internal space. The drying step includes: a pressurization step: increasing the pressure in the internal space to a set pressure; a flow step: generating flow of the drying fluid in the internal space by maintaining the same amount of drying fluid supplied to the internal space per unit time and the same amount of drying fluid released from the internal space per unit time for a set time period; and a discharge step: reducing the pressure in the internal space.

[0035] According to one embodiment, during the flow step, the pressure in the internal space can be maintained at the set pressure, and the set pressure can be in the range of 120 bar to 150 bar.

[0036] According to one implementation, the set pressure can be 150 bar.

[0037] According to one implementation, the set time period can range from 20 seconds to 65 seconds.

[0038] According to one implementation, the set time period can range from 25 seconds to 60 seconds.

[0039] According to one embodiment, during the flow step, a first discharge valve that selectively allows the drying fluid to flow through the main discharge line can remain open, and the main discharge line empties the internal space. Attached Figure Description

[0040] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals refer to the same parts in the various drawings, and wherein:

[0041] Figure 1 The figure illustrates the pressure changes in the treatment chamber during a typical supercritical drying process.

[0042] Figure 2 This is a schematic plan view illustrating a substrate processing apparatus according to one embodiment of the concept of the present invention;

[0043] Figure 3 It is shown Figure 2 A schematic diagram of one embodiment of the liquid handling chamber;

[0044] Figure 4 It is shown Figure 2 A schematic diagram of one embodiment of the drying chamber;

[0045] Figure 5 This is a flowchart illustrating a substrate processing method according to an embodiment of the concept of the present invention;

[0046] Figure 6 The diagram illustrates the execution. Figure 5 The liquid handling chamber for liquid handling steps;

[0047] Figure 7 The diagram illustrates the execution. Figure 5 The drying chamber in the first pressurization step;

[0048] Figure 8 The diagram illustrates the execution. Figure 5 The drying chamber in the second pressurization step;

[0049] Figure 9 The diagram illustrates the execution. Figure 5 The drying chamber for the flow steps;

[0050] Figure 10 The diagram illustrates the execution. Figure 5 The drying chamber of the first discharge step;

[0051] Figure 11 The diagram illustrates the execution. Figure 5 The drying chamber of the second discharge step;

[0052] Figure 12 The figure illustrates the pressure changes within the internal space of the main body during the drying process of the present invention.

[0053] Figure 13 This is a schematic diagram illustrating a drying chamber according to another embodiment of the concept of the present invention;

[0054] Figure 14 This is a schematic diagram illustrating a drying chamber according to another embodiment of the concept of the present invention; and

[0055] Figure 15 This is a schematic diagram illustrating a drying chamber according to another embodiment of the concept of the present invention. Detailed Implementation

[0056] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement the inventive concept. However, the inventive concept can be implemented in various different forms and is not limited to the embodiments described herein. Furthermore, in describing embodiments of the inventive concept, detailed descriptions related to well-known functions or configurations will be omitted where such descriptions might unnecessarily obscure the subject matter of the inventive concept. Additionally, throughout the drawings, components performing similar functions and operations have the same reference numerals.

[0057] The terms “comprising” and “including” in this specification are open-ended expressions used only to indicate the presence of the corresponding component and do not exclude but may include additional components unless specifically described to the contrary. Specifically, it should be understood that the terms “comprising,” “including,” and “having” as used herein specify the presence of the stated feature, integral, step, operation, component, and / or portion, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, components, portions, and / or groups thereof.

[0058] Unless otherwise stated, singular terms may include plural forms. Furthermore, in the accompanying drawings, the shape and size of parts may be exaggerated for clarity.

[0059] Terms such as "first" and "second" may be used to describe various components, but a component should not be limited by such terms. These terms may be used only to distinguish one component from other components. For example, without departing from the scope of the inventive concept, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component.

[0060] It should be understood that when an element is referred to as "connected" or "linked" to another element, it can be directly connected or linked to the other element, or there may be an intermediate element. Conversely, when an element is referred to as "directly connected" or "directly linked" to another element, there is no intermediate element. Other words used to describe the relationship between elements should be interpreted in a similar way (i.e., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.).

[0061] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those commonly understood by one of ordinary skill in the art to which this invention pertains. Such terms, as defined in a general dictionary, should be interpreted as having the same meaning as in the context of the relevant technical field, and not as having an idealized or overly formal meaning, unless expressly defined in this application as having such a meaning.

[0062] Figure 2This is a schematic plan view illustrating a substrate processing apparatus according to one embodiment of the concept of the present invention.

[0063] refer to Figure 2 The substrate processing apparatus includes a transposition module 10, a processing module 20, and a controller 30. When viewed from above, the transposition module 10 and the processing module 20 are arranged in one direction. Hereinafter, the arrangement direction of the transposition module 10 and the processing module 20 is referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above is referred to as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y is referred to as the third direction Z.

[0064] The transposition module 10 transfers the substrate W from the carrier C that receives the substrate W to the processing module 20, and places the substrate W, which has been fully processed in the processing module 20, into the carrier C. The longitudinal direction of the transposition module 10 is parallel to the second direction Y. The transposition module 10 has a loading port 12 and a transposition frame 14. The loading port 12 is located on the opposite side of the processing module 20 relative to the transposition frame 14. The carrier C, in which the substrate W is received, is placed on the loading port 12. Multiple loading ports 12 can be provided. The multiple loading ports 12 can be arranged along the second direction Y.

[0065] An airtight carrier, such as a front-opening standard container (FOUP), can be used as carrier C. Carrier C can be transported by a transfer unit (not shown), such as an overhead conveyor, overhead conveyor, or automated guided vehicle, or by being placed on loading port 12 by an operator.

[0066] A rotary manipulator 120 is disposed within a rotary frame 14. A guide rail 124, whose length direction is parallel to the second direction Y, can be disposed within the rotary frame 14, and the rotary manipulator 120 can move on the guide rail 124. The rotary manipulator 120 includes a hand 122 on which a substrate W is placed. The hand 122 is movable forward and backward, rotatable about an axis facing the third direction Z, and movable along the third direction Z. The hands 122 can be spaced apart from each other in the up / down direction. The hands 122 can move forward and backward independently.

[0067] Controller 30 can control the substrate processing apparatus. Controller 30 may include a process controller, a user interface, and a storage unit. The process controller may include a microprocessor (computer) for controlling the substrate processing apparatus. The user interface may include a keyboard for an operator to manage the substrate processing apparatus by inputting commands, or a display visually showing the operating status of the substrate processing apparatus. The storage unit may store process recipes, such as control programs for executing processes performed in the substrate processing apparatus under the control of the process controller, or programs for causing each component to perform processes according to various types of data and process conditions. The user interface and storage unit may be connected to the process controller. Process recipes may be stored in a storage medium in the storage unit. The storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0068] The controller 30 can control the substrate processing apparatus to perform the substrate processing method described below. For example, the controller 30 can control the fluid supply unit 530 and the fluid discharge unit 550 to perform the substrate processing method described below.

[0069] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides space for the substrate W being loaded into the processing module 20 and for the substrate W to be temporarily held before being loaded out of the processing module 20. The liquid processing chamber 400 performs a liquid processing process on the substrate W by dispensing liquid onto it. The drying chamber 500 performs a drying process to remove any remaining liquid from the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0070] The transfer chamber 300 can be configured such that its length direction is parallel to the first direction X. The buffer unit 200 can be disposed between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be disposed on the lateral side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be disposed along the second direction Y. The drying chamber 500 and the transfer chamber 300 can be disposed along the second direction Y. The buffer unit 200 can be located at one end of the transfer chamber 300.

[0071] According to one embodiment, the liquid processing chamber 400 may be disposed on the opposite side of the transfer chamber 300. The drying chamber 500 may be disposed on the opposite side of the transfer chamber 300. The liquid processing chamber 400 may be closer to the buffer unit 200 than the drying chamber 500. On one side of the transfer chamber 300, the liquid processing chamber 400 may be arranged in an A×B array (A and B are natural numbers 1 or greater) along the first direction X and the third direction Z. Furthermore, the drying chamber 500 may be arranged in a C×D array (C and D are natural numbers 1 or greater) on one side of the transfer chamber 300 along the first direction X and the third direction Z. Alternatively, only the liquid processing chamber 400 may be disposed on one side of the transfer chamber 300, and only the drying chamber 500 may be disposed on the opposite side of the transfer chamber 300.

[0072] The transfer chamber 300 includes a transfer robot 320. A guide rail 324, whose length direction is parallel to a first direction X, can be provided in the transfer chamber 300, and the transfer robot 320 can move along the guide rail 324. The transfer robot 320 includes a hand 322, on which a base plate W is placed. The hand 322 is movable forward and backward, rotatable about an axis facing a third third direction Z, and movable along the third third direction Z. The hands 322 can be spaced apart from each other in the up / down direction. The hands 322 can move forward and backward independently.

[0073] The buffer unit 200 includes multiple buffers 220, in which the substrate W is placed. The buffers 220 are spaced apart from each other along a third direction Z. The front and back of the buffer unit 200 are open. The front faces the indexing module 10, and the back faces the transfer chamber 300. The indexing robot 120 can enter the buffer unit 200 through the front, and the transfer robot 320 can enter the buffer unit 200 through the back.

[0074] Figure 3 It is shown Figure 2 A schematic diagram of one embodiment of the liquid handling chamber. (Reference) Figure 3 The liquid handling chamber 400 has a housing 410, a cup-shaped part 420, a support unit 440, a liquid distribution unit 460, and a lifting unit 480.

[0075] The housing 410 may have an internal space for processing the substrate W. The housing 410 may have a hexahedral shape. For example, the housing 410 may have a cuboid shape. The housing 410 may have an opening (not shown) through which the substrate W enters or exits the housing 410. The housing 410 may be equipped with a door (not shown) that selectively opens and closes the opening.

[0076] The cup-shaped portion 420 may have a container shape with an open top. The cup-shaped portion 420 may have a processing space in which the substrate W can be processed with liquid. A support unit 440 supports the substrate W within the processing space. A liquid dispensing unit 460 dispenses liquid onto the substrate W supported on the support unit 440. Liquid can be dispensed onto the substrate W sequentially. A lifting unit 480 adjusts the relative height between the cup-shaped portion 420 and the support unit 440.

[0077] According to one embodiment, the cup-shaped portion 420 has a plurality of recovery bowl-shaped portions 422, 424, and 426. The recovery bowl-shaped portions 422, 424, and 426 have recovery spaces for recovering liquid used in processing the substrate W. The recovery bowl-shaped portions 422, 424, and 426 have an annular shape surrounding the support unit 440. During liquid processing, liquid that is scattered due to the rotation of the substrate W is introduced into the recovery space through inlets 422a, 424a, and 426a of each of the recovery bowl-shaped portions 422, 424, and 426. According to one embodiment, the cup-shaped portion 420 has a first recovery bowl-shaped portion 422, a second recovery bowl-shaped portion 424, and a third recovery bowl-shaped portion 426. The first recovery bowl-shaped portion 422 is configured to surround the support unit 440, the second recovery bowl-shaped portion 424 is configured to surround the first recovery bowl-shaped portion 422, and the third recovery bowl-shaped portion 426 is configured to surround the second recovery bowl-shaped portion 424. The second inlet 424a for introducing liquid into the second recycling bowl 424 may be located at a higher position than the first inlet 422a for introducing liquid into the first recycling bowl 422, and the third inlet 426a for introducing liquid into the third recycling bowl 426 may be located at a higher position than the second inlet 424a.

[0078] The support unit 440 has a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 may have a substantially circular shape and may have a larger diameter than the substrate W. A support pin 442a is provided at the center of the support plate 442 to support the rear surface of the substrate W. The support pin 442a protrudes upward from the support plate 442 to space the substrate W from the support plate 442 by a predetermined distance. A chuck pin 442b is provided on the edge portion of the support plate 442. The chuck pin 442b protrudes upward from the support plate 442 and supports the lateral portion of the substrate W to prevent the substrate W from deviating from the support unit 440 when the substrate W rotates. The drive shaft 444 is driven by an actuator 446. The drive shaft 444 is connected to the center of the rear surface of the support plate 442 and rotates the support plate 442 about its central axis.

[0079] According to one embodiment, the liquid dispensing unit 460 may include nozzles 462. Nozzles 462 may dispense a processing liquid onto the substrate W. The processing liquid may be a chemical, a rinsing solution, or an organic solvent. Chemicals may be chemicals with strong acid or strong base properties. Rinsing solutions may be deionized water. Organic solvents may be isopropanol (IPA). The liquid dispensing unit 460 may include multiple nozzles 462, and nozzles 462 may dispense different types of processing liquids. For example, one nozzle 462 may dispense chemicals, another nozzle 462 may dispense rinsing solutions, and yet another nozzle 462 may dispense organic solvents. After the rinsing solution is dispensed onto the substrate W, the controller 30 may control the liquid dispensing unit 460 to dispense organic solvents onto the substrate W. Therefore, the rinsing liquid dispensed onto the substrate W may be replaced with an organic solvent having low surface tension.

[0080] The lifting unit 480 moves the cup-shaped portion 420 in the up / down direction. The height of the cup-shaped portion 420 relative to the substrate W is changed by the movement of the cup-shaped portion 420 in the up / down direction. Therefore, the recovery bowl-shaped portions 422, 424, and 426 for recovering the processing liquid can be changed according to the type of liquid dispensed onto the substrate W, thereby separating and recovering the liquid. Alternatively, the cup-shaped portion 420 can be fixed, and the lifting unit 480 can move the support unit 440 in the up / down direction.

[0081] Figure 4 It is shown Figure 2 A schematic diagram of one embodiment of the drying chamber. (See reference) Figure 4 According to an embodiment of the present invention, the drying chamber 500 can use a supercritical drying fluid G to remove the processing liquid remaining on the substrate W. For example, the drying chamber 500 can perform a drying process using supercritical carbon dioxide (CO2) to remove organic solvents remaining on the substrate W.

[0082] The drying chamber 500 may include a main body 510, a heating element 520, a fluid supply unit 530, a fluid discharge unit 550, and a lifting element 560. The main body 510 may have an internal space 518 for processing a substrate. The main body 510 may provide an internal space 518 for processing a substrate W. The main body 510 may provide an internal space 518 for drying the substrate W by passing a drying fluid G in a supercritical state.

[0083] The main body 510 may include an upper body 512 and a lower body 514. The upper body 512 and the lower body 514 may be combined with each other to form an internal space 518. A substrate W may be supported in the internal space 518. For example, the substrate W may be supported in the internal space 518 by a support member (not shown). The support member may be configured to support the lower surface of an edge region of the substrate W. One of the upper body 512 and the lower body 514 may be coupled to a lifting member 560 and may move in an up / down direction via the lifting member 560. For example, the lower body 514 may be coupled to the lifting member 560 and may move in an up / down direction via the lifting member 560. Therefore, the internal space 518 of the main body 510 may be selectively sealed. Although it has been shown that the lower body 514 is coupled to the lifting member 560 and may move in an up / down direction via the lifting member 560, the inventive concept is not limited thereto. For example, the upper body 512 may be coupled to the lifting member 560 and may move in an up / down direction via the lifting member 560.

[0084] The heating element 520 can heat the dry fluid G supplied to the internal space 518. The heating element 520 can raise the temperature in the internal space 518 of the main body 510 so that the dry fluid G supplied to the internal space 518 undergoes a phase transformation to a supercritical state. In addition, the heating element 520 can raise the temperature in the internal space 518 of the main body 510 so that the dry fluid G supplied to the internal space 518 in the supercritical state is maintained in the supercritical state.

[0085] Furthermore, the heating element 520 may be embedded in the main body 510. For example, the heating element 520 may be embedded in one of the upper main body 512 and the lower main body 514. For example, the heating element 520 may be disposed in the lower main body 514. However, it is not limited to this, and the heating element 520 may be disposed in different locations to raise the temperature in the interior space 518. The heating element 520 may be a heater. However, it is not limited to this, and the heating element 520 may be implemented using various well-known devices capable of raising the temperature in the interior space 518.

[0086] The fluid supply unit 530 can supply dry fluid G into the internal space 518 of the main body 510. The dry fluid G supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539.

[0087] The fluid supply source 531 can store the dry fluid G to be supplied to the internal space 518 of the main body 510 and / or supply the dry fluid G to the internal space 518 of the main body 510. The fluid supply source 531 can supply the dry fluid G to the first supply line 533 and / or the second supply line 537. For example, the first supply valve 535 can be arranged in a straight line with the first supply line 533. In addition, the second supply valve 539 can be arranged in a straight line with the second supply line 537. The first supply valve 535 and the second supply valve 539 can be on / off valves. When the first supply valve 535 and the second supply valve 539 are opened / closed, the dry fluid G can selectively flow through the first supply line 533 or the second supply line 537.

[0088] Although the connection of the first supply line 533 and the second supply line 537 to a fluid supply source 531 has been shown, the inventive concept is not limited thereto. For example, multiple fluid supply sources 531 may be provided. The first supply line 533 may be connected to one of the multiple fluid supply sources 531, and the second supply line 537 may be connected to another of the fluid supply sources 531.

[0089] The first supply line 533 may be an upper supply line that supplies the drying fluid G from above the interior space 518 of the main body 510. For example, the first supply line 533 may supply the drying fluid G into the interior space 518 of the main body 510 in a downward direction. For example, the first supply line 533 may be connected to the upper main body 512. Furthermore, the second supply line 537 may be a lower supply line that supplies the drying fluid G from below the interior space 518 of the main body 510. For example, the second supply line 537 may supply the drying fluid G into the interior space 518 of the main body 510 in an upward direction. For example, the second supply line 537 may be connected to the lower main body 514.

[0090] The fluid discharge unit 550 can release dry fluid G from the internal space 518 of the main body 510. The fluid discharge unit 550 may include a main discharge line 551, a flow line 553, a slow discharge line 555, a fast discharge line 557, and a pulse discharge line 559.

[0091] The main discharge line 551 can be connected to the main body 510. The main discharge line 551 can release the dried fluid G supplied to the interior space 518 of the main body 510 to the outside of the main body 510. For example, one end of the main discharge line 551 can be connected to the main body 510. One end of the main discharge line 551 can be connected to one of the upper main body 512 and the lower main body 514. For example, one end of the main discharge line 551 can be connected to the lower main body 514. Furthermore, the opposite end of the main discharge line 551 can branch. For example, the opposite end of the main discharge line 551 can branch. The branches of the main discharge line 551 can include a flow line 553, a slow discharge line 555, a fast discharge line 557, and a pulse discharge line 559.

[0092] Flow line 553 can branch off from the opposite end of main discharge line 551. First discharge valve 553a and pressure regulating member 553b can be arranged in a straight line with flow line 553. First discharge valve 553a can be installed upstream of pressure regulating member 553b. First discharge valve 553a can be an on / off valve. First discharge valve 553a allows the drying fluid G to selectively flow through flow line 553. Furthermore, flow line 553 can be used in flow step S33 as described below.

[0093] The pressure regulating member 553b can maintain the pressure in the internal space 518 of the main body 510 at a set pressure. For example, the pressure regulating member 553b can measure the pressure of the drying fluid G flowing through the main discharge line 551. Furthermore, the pressure regulating member 553b can measure the pressure in the internal space 518 of the main body 510 based on the pressure of the drying fluid G flowing through the main discharge line 551. In addition, to maintain the pressure in the internal space 518 of the main body 510 at the set pressure, the pressure regulating member 553b can regulate the amount of drying fluid G released per unit time through the flow line 533. For example, the pressure regulating member 553b can be a back pressure regulator (BRP). For example, assuming the set pressure in the internal space 518 of the main body 510 is 150 bar, the pressure regulating member 553b can prevent the drying fluid G from being released through the flow line 553 until the pressure in the internal space 518 of the main body 510 reaches the set pressure of 150 bar. Furthermore, when the pressure in the internal space 518 of the main body 510 reaches a pressure higher than the set pressure (e.g., 170 bar), the pressure regulating member 553b can release the dry fluid G through the flow line 553 to reduce the pressure in the internal space 518 of the main body 510 to 150 bar.

[0094] A slow discharge line 555 can branch off from the opposite end of the main discharge line 551. The slow discharge line 555 can reduce the pressure in the internal space 518 of the main body 510. The slow discharge line 555 can be used in the first discharge step S34 described below. A second discharge valve 555a and a slow discharge line orifice 553b can be arranged in a straight line with the slow discharge line 555. The second discharge valve 555a can be installed upstream of the slow discharge line orifice 555b. The second discharge valve 555a can be an on / off valve. Furthermore, the hydraulic diameter of the slow discharge line orifice 555b can be smaller than the hydraulic diameter of the fast discharge line orifice 557b, which will be described below.

[0095] A quick discharge line 557 can branch off from the opposite end of the main discharge line 551. The quick discharge line 557 can reduce the pressure in the internal space 518 of the main body 510. The quick discharge line 557 can be used in the second discharge step S35 described below. A third discharge valve 557a and a quick discharge line orifice 557b can be arranged in a straight line with the quick discharge line 557. The third discharge valve 557a can be installed upstream of the quick discharge line orifice 557b. The third discharge valve 557a can be an on / off valve. Furthermore, the hydraulic diameter of the quick discharge line orifice 557b can be larger than the hydraulic diameter of the slow discharge line orifice 555b, which will be described below.

[0096] The pulse discharge line 559 can branch off from the opposite end of the main discharge line 551. The pulse discharge line 559 can repeatedly change the pressure in the internal space 518 of the main body 510. For example, the fourth discharge valve 559a and the pulse discharge line orifice 559b can be arranged in a straight line with the pulse discharge line 559. The fourth discharge valve 559a can be an on / off valve. The controller 30 described above can raise / lower the pressure in the internal space 518 of the main body 510 by repeatedly opening / closing the fourth discharge valve 559a. That is, the pressure in the internal space 518 of the main body 510 can be repeatedly raised and lowered by opening / closing the fourth discharge valve 559a. In addition, the pulse discharge line 559 can be used in the flow step S33 described below. In the flow step S33 described below, the controller 30 can open / close the first discharge valve 553a or the fourth discharge valve 559a to release the dry fluid G in the internal space 518 of the main body 510 by selecting one of the flow line 553 and the pulse discharge line 559.

[0097] Hereinafter, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method described below can be performed by a substrate processing apparatus. The controller 30 can control the substrate processing apparatus to perform the substrate processing method described below.

[0098] Figure 5This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. (Reference) Figure 5 The substrate processing method according to an embodiment of the present invention may include a liquid processing step S10, a transfer step S20, and a drying step S30.

[0099] The liquid processing step S10 is a step of liquid processing the substrate W by dispensing a processing liquid onto the substrate W. The liquid processing step S10 can be performed in the liquid processing member 400. For example, in the liquid processing step S10, the processing liquid can be dispensed onto the rotating substrate W to liquid process the substrate W (see reference). Figure 6 The processing liquid dispensed in the liquid processing step S10 can be at least one of the above-mentioned chemicals, rinsing solutions, or organic solvents. For example, in the liquid processing step S10, a rinsing solution can be dispensed onto the rotating substrate W to rinse the substrate W. Subsequently, an organic solvent can be dispensed onto the rotating substrate W, and the rinsing solution remaining on the substrate W can be replaced with the organic solvent.

[0100] Transfer step S20 is the step of transferring the substrate W. Transfer step S20 can be the step of transferring the liquid-treated substrate W to the drying chamber 500. For example, in transfer step S20, the transfer robot 320 can transfer the substrate W from the liquid treatment chamber 400 to the drying chamber 500. The treatment liquid can remain on the substrate W transferred in transfer step S20. For example, an organic solvent can remain on the substrate W. That is, the substrate W immersed in an organic solvent can be transferred to the drying chamber 500.

[0101] Drying step S30 is the step of drying the substrate W. Drying step S30 can be performed in drying chamber 500. In drying step S30, drying fluid G can be supplied to the substrate W in the internal space 518 of the main body 510 to dry the substrate W. The drying fluid G supplied to the substrate W in drying step S30 can be in a supercritical state.

[0102] The drying step S30 may include pressurization steps S31 and S32, flow step S33, and discharge steps S34 and S35. Pressurization steps S31 and S32 may be steps to increase the pressure in the internal space 518 of the main body 510 to a set pressure.

[0103] The flow step S33 can be performed after the pressurization steps S31 and S32. The flow step S33 can be a step that causes the supercritical dry fluid G supplied to the internal space 518 of the body 510 to flow.

[0104] Discharge steps S34 and S35 can be performed after flow step S33. In discharge steps S34 and S35, the pressure in the internal space 518 of the main body 510 can be reduced. For example, in discharge steps S34 and S35, the pressure in the internal space 518 of the main body 510 can be reduced to atmospheric pressure.

[0105] The pressurization steps S31 and S32, the flow step S33, and the discharge steps S34 and S35 will be described in more detail below.

[0106] The boosting steps S31 and S32 may include a first boosting step S31 and a second boosting step S32.

[0107] In the first pressurization step S31, the second supply line 37 can supply the drying fluid G to the internal space 518 of the main body 510 (reference). Figure 7 That is, in the first pressurization step S31, the drying fluid G can be supplied to the lower part of the internal space 518 of the main body 510, specifically, to the area below the substrate W supported in the internal space 518. In the first pressurization step S31, the pressure within the internal space 518 of the main body 510 can be increased to a second set pressure P2. The second set pressure P2 can be 120 bar. Furthermore, while performing the first pressurization step S31, the first discharge valve 553a can remain open. Because the pressure in the internal space 518 of the main body 510 does not reach the desired pressure (e.g., the second pressure P2) in the first pressurization step S31, the pressure regulating member 553b can prevent the drying fluid G from flowing through the flow line 553, even if the first discharge valve 553a is open.

[0108] In the second pressurization step S32, the first supply line 533 can supply the drying fluid G to the internal space 518 of the main body 510 (reference). Figure 8 That is, in the second pressurization step S32, the drying fluid G can be supplied to the upper part of the internal space 518, specifically, to the substrate W supported in the internal space 518. In the second pressurization step S32, the pressure in the internal space 518 of the main body 510 can be increased to a first set pressure P1. The first set pressure P1 can be 150 bar. Furthermore, while performing the second pressurization step S32, the first discharge valve 553a can remain open. Because the pressure in the internal space 518 of the main body 510 does not reach the desired pressure (e.g., the second pressure P2) in the second pressurization step S32, the pressure regulating member 553b can prevent the drying fluid G from flowing through the flow line 553, even if the first discharge valve 553a is open.

[0109] Although the first supply line 533 has been shown supplying the dry fluid G in the second pressurization step S32, the inventive concept is not limited thereto. For example, in the second pressurization step S32, the second supply line 537 may supply the dry fluid G. Alternatively, both the first supply line 533 and the second supply line 537 may supply the dry fluid G.

[0110] During pressurization steps S31 and S32, the pressure in the internal space 518 can reach the desired pressure. During pressurization steps S31 and S32, the internal space 518 can be heated by the heating element 520. Therefore, the dry fluid G supplied to the internal space 518 can undergo a phase change to a supercritical state. However, this is not a limitation; the dry fluid G can be supplied to the internal space 518 in a supercritical state. In this case, the pressure in the internal space 518 can reach the desired pressure (e.g., a first set pressure P1) during pressurization steps S31 and S32, thus the dry fluid G supplied to the internal space 518 in a supercritical state can remain in the supercritical state.

[0111] In flow step S33, the supercritical dry fluid G supplied to the internal space 518 can be made to flow. In flow step S33, flow line 553 can continuously supply dry fluid G while simultaneously releasing dry fluid G from the first supply line 533 (see reference). Figure 9 That is, in flow step S33, the fluid discharge unit 550 can continuously release the dry fluid G from the internal space 518 while the fluid supply unit 530 supplies the dry fluid G into the internal space 518. Furthermore, in flow step S33, the first discharge valve 553a can remain open. Additionally, in flow step S33, the second discharge valve 555a, the third discharge valve 557a, and the fourth discharge valve 559a can remain closed.

[0112] To maintain the pressure in the internal space 518 at a first set pressure P1 (e.g., 150 bar), the pressure regulating member 553b regulates the amount of dry fluid G flowing through the flow line 553 per unit time. Therefore, the amount of dry fluid G supplied per unit time by the first supply line 533 of the fluid supply unit 530 can be the same as the amount of dry fluid G released per unit time by the fluid discharge unit 550 through the flow line 553. That is, in the flow step S33, the first supply line 533 can continuously supply dry fluid G, while the flow line 553 can continuously release dry fluid G. Thus, flow of dry fluid G in the internal space 518 can be generated.

[0113] In the first discharge step S34, the dried fluid G can be released through the slow discharge line 555, and the fluid supply unit 530 can stop supplying the dried fluid G (see reference). Figure 10 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the first discharge step S34, the second discharge valve 555a can be opened and can remain open. Additionally, in the first discharge step S34, the first discharge valve 553a, the third discharge valve 557a, and the fourth discharge valve 559a can remain closed.

[0114] In the second discharge step S35, the dried fluid G can be released through the rapid discharge line 557, and the fluid supply unit 530 can stop supplying the dried fluid G (see reference). Figure 11 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the second discharge step S35, the third discharge valve 557a can be opened and can remain open. Additionally, in the second discharge step S35, the first discharge valve 553a, the second discharge valve 555a, and the fourth discharge valve 559a can remain closed.

[0115] As mentioned above, the hydraulic diameter of the slow discharge pipeline orifice 555b is smaller than the hydraulic diameter of the fast discharge pipeline orifice 557b, so the decompression rate in the first discharge step S34 can be lower than the decompression rate in the second discharge step S35.

[0116] Figure 12 The figure illustrates the pressure changes within the internal space of the main body during the drying process described in this invention. (Reference) Figure 12 In the first pressurization step S31, the pressure in the internal space 518 can be increased to a second set pressure P2. The second set pressure P2 can be approximately 120 bar. In the second pressurization step S32, the pressure in the internal space 518 can be increased to a first set pressure P1. The first set pressure P1 can be approximately 150 bar. In the flow step S33, the pressure in the internal space 518 can be maintained at the first set pressure P1. In the first discharge step S34, the pressure in the internal space 518 can be slowly reduced, and in the second discharge step S35, the pressure in the internal space 518 can be rapidly reduced.

[0117] The effects of the present invention will be described in detail below.

[0118] The table below shows the processing time and the number of particles remaining on the substrate W when the flow step S33 is performed in a conventional pulse manner using the pulse discharge line 559 and when the flow step S33 is performed continuously using the flow line 553. The boosting steps S31 and S32, as well as the discharge steps S34 and S35, are performed simultaneously. Furthermore, the amount of organic solvent remaining on the substrate W is the same.

[0119] [Table 1]

[0120]

[0121] As can be seen from the table above, when the continuous flow step S33 is performed using the method conceived in this invention, even with a reduced set time for performing the flow step S33, the number of particles remaining on the substrate W will be equal to or less than the number of particles remaining on the substrate W when the flow step S33 is performed using a conventional pulse method. That is, according to the embodiments conceived in this invention, the number of particles remaining on the substrate W can be maintained at the same or lower level while reducing the time spent processing the substrate W. As can be seen from the experimental data, the set time (t2 to t3) during the flow step S33 can be in the range of 20 seconds to 65 seconds, preferably in the range of 25 seconds to 65 seconds. For example, the flow step S33 can be performed for 33 seconds or 40 seconds, showing a low particle level.

[0122] In this invention, the pressure in the internal space 518 during flow step S33 can be maintained in the range of 120 bar to 150 bar. For example, the pressure in the internal space 518 during flow step S33 can be maintained at approximately 150 bar.

[0123] Although the fluid discharge unit 550 has been shown to include a pulse discharge line 559, a fourth discharge valve 559a, and a pulse discharge line orifice 559b, these components can be omitted, such as... Figure 13 As shown.

[0124] Although the pressure regulating member 553b has been shown to be aligned with the flow line 553, the inventive concept is not limited thereto. For example, instead of the pressure regulating member 553b, the flow line orifice 553c may be aligned with the flow line 553. The flow line orifice 553c may have a hydraulic diameter suitable for maintaining the pressure in the internal space 518 at set pressures P1 and P2.

[0125] Although the main body 510 has been shown to include an upper body 512 and a lower body 514, the inventive concept is not limited thereto. For example, as Figure 15 As shown, the main body 510a may include a base 512a and a door 514a. The base 512a and the door 514a may be joined together to form an internal space 518a. The base 512a may have a container shape that opens on one side, and the door 514a may be movable in the lateral direction to selectively open and close the internal space 518a. A sealing member 560a may be provided between the door 514a and the base 512a. A support plate 516a may be connected to the door 514a, and the base plate W may be supported on the support plate 516a.

[0126] The first supply line 533a can supply drying fluid G from one side to the substrate W supported on the support plate 516a. The second supply line 537a can supply drying fluid G from below the substrate W. The main discharge line 551a can evacuate the internal space 518a from below the substrate W. The components of the fluid supply unit 530 and the fluid discharge unit 550 can be used in the same or similar manner.

[0127] As described above, according to embodiments of the present invention, the substrate processing apparatus and method can effectively process substrates.

[0128] Furthermore, according to embodiments of the present invention, the substrate processing apparatus and method can improve the efficiency of drying substrates.

[0129] Furthermore, according to embodiments of the present invention, the substrate processing apparatus and method can reduce the time spent performing the drying process of the dried substrate.

[0130] Furthermore, according to embodiments of the present invention, the substrate processing apparatus and method can minimize impurities, such as particles, while performing a drying process for a dried substrate.

[0131] The effects of this invention are not limited to those described above, and any other effects not mentioned herein can be clearly understood by those skilled in the art from this specification and the accompanying drawings.

[0132] The above description illustrates the inventive concept by example. Furthermore, while the foregoing describes embodiments of the inventive concept, it can be used in various other combinations, variations, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept disclosed herein, the equivalent scope of the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept and various changes can be made as needed for specific applications and purposes of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Furthermore, it should be understood that the appended claims include other embodiments.

[0133] Although the inventive concept has been described with reference to embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A main body having an internal space in which the substrate is dried by a drying fluid in a supercritical state; A fluid supply unit configured to supply the dry fluid to the interior space; A fluid discharge unit configured to release the dry fluid from the internal space; and Controller The controller therein controls the fluid supply unit and the fluid discharge unit to perform: Pressurization step: Increase the pressure in the internal space to a set pressure; and Flow step: The flow of the dry fluid is generated in the internal space by simultaneously supplying the dry fluid into the internal space by the fluid supply unit and releasing the dry fluid from the internal space by the fluid discharge unit. The fluid discharge unit includes: The main discharge pipeline is connected to the main body; and Multiple branch pipelines, which are connected to the main discharge pipeline. The plurality of branch lines include: A flow line, branching from the main discharge line, is equipped with a first discharge valve and a back pressure regulator configured to maintain the pressure in the internal space at a set pressure; and A pulse discharge line, which branches off from the main discharge line, is equipped with a fourth discharge valve and an orifice configured to control the discharge flow rate of the drying fluid.

2. The apparatus of claim 1, wherein the controller controls the fluid supply unit and the fluid discharge unit such that the pressure in the internal space is maintained at the set pressure during the execution of the flow step.

3. The apparatus of claim 1, wherein the controller controls the fluid supply unit and the fluid discharge unit such that, during the execution of the flow step, the amount of dry fluid supplied to the interior space per unit time by the fluid supply unit and the amount of dry fluid released from the interior space per unit time by the fluid discharge unit are the same as each other.

4. The apparatus of claim 1, wherein the first discharge valve is configured to selectively allow the drying fluid to flow through the main discharge line, and The controller controls the fluid supply unit and the fluid discharge unit such that the first discharge valve remains open during the execution of the flow step.

5. The apparatus of claim 4, wherein the fluid discharge unit further comprises: A slow discharge line, configured to branch off from the main discharge line, is equipped with a second discharge valve. and A fast discharge line is configured to branch off from the main discharge line, and a third discharge valve is installed on the fast discharge line thereon, wherein the amount of the dry fluid released per unit time through the fast discharge line is greater than the amount of the dry fluid released per unit time through the slow discharge line.

6. The apparatus of claim 5, wherein the controller controls the fluid supply unit and the fluid discharge unit to additionally perform: First discharge step: The pressure in the internal space is reduced by releasing the dry fluid from the internal space through the slow discharge line by opening the second discharge valve; and The second discharge step involves reducing the pressure in the internal space by opening the third discharge valve through the rapid discharge line.

7. The apparatus according to any one of claims 1 to 6, wherein the controller controls the fluid supply unit and the fluid discharge unit such that the flow step is performed for a period of 20 to 65 seconds.

8. The apparatus of claim 7, wherein the controller controls the fluid supply unit and the fluid discharge unit such that the flow step is performed for a period of 25 to 65 seconds.

9. The apparatus according to any one of claims 2 to 6, wherein the controller controls the fluid supply unit and the fluid discharge unit such that the set pressure is in the range of 120 bar to 150 bar.

10. The apparatus of claim 9, wherein the controller controls the fluid supply unit and the fluid discharge unit such that the set pressure is equal to 150 bar.

11. An apparatus for processing a substrate, the apparatus comprising: A main body having an internal space in which the substrate is dried by a drying fluid in a supercritical state; A fluid supply unit configured to supply the dry fluid to the interior space; A fluid discharge unit configured to release the dry fluid from the internal space; and Controller The fluid discharge unit includes: The main discharge pipeline is connected to the main body; and Multiple branch pipelines, which are connected to the main discharge pipeline. The plurality of branch lines include: A flow line, branching from the main discharge line, is equipped with a first discharge valve and a back pressure regulator configured to maintain the pressure in the internal space at a set pressure; and A pulse discharge line, branching from the main discharge line, is equipped with a fourth discharge valve and an orifice configured to control the discharge flow rate of the drying fluid. The first discharge valve is configured to selectively allow the dried fluid to flow through the main discharge line. The controller thereunder performs: Pressurization step: Increase the pressure in the internal space to the set pressure; Flow steps: maintaining the pressure in the internal space at the set pressure; and Discharge step: Reduce the pressure in the internal space, and The controller controls the fluid supply unit and the fluid discharge unit such that the first discharge valve remains open during the flow step.

12. The apparatus of claim 11, wherein the controller controls the fluid supply unit and the fluid discharge unit such that, during the flow step, the amount of dry fluid supplied by the fluid supply unit per unit time and the amount of dry fluid released per unit time through the main discharge line are the same as each other.

13. The apparatus according to claim 11 or 12, wherein the fluid supply unit comprises: A first supply line is configured to supply the drying fluid from above the substrate supported in the internal space; and A second supply line is configured to supply the drying fluid from below the substrate supported in the internal space.

14. The apparatus of claim 11 or 12, wherein the fluid supply unit comprises: A first supply line is configured to supply the drying fluid from the side of the substrate supported in the internal space; and A second supply line is configured to supply the drying fluid from below the substrate supported in the internal space.

15. An apparatus for processing a substrate, the apparatus comprising: The main body has an internal space in which organic solvents remaining on the substrate are dried by a drying fluid in a supercritical state. A fluid supply unit configured to supply the dry fluid to the interior space; A fluid discharge unit configured to release the dry fluid from the internal space; and Controller The controller thereunder performs: Pressurization step: The pressure in the internal space is increased to a set pressure by supplying the dried fluid into the internal space through the fluid supply unit; Flow step: The dry fluid is generated in the internal space by supplying the dry fluid into the internal space by the fluid supply unit and releasing the dry fluid from the internal space by the fluid discharge unit; and Discharge step: The pressure in the internal space is reduced by releasing the dried fluid from the internal space through the fluid discharge unit, and The controller controls the fluid supply unit and the fluid discharge unit such that, during the execution of the flow step, the amount of dry fluid supplied to the internal space per unit time by the fluid supply unit and the amount of dry fluid released from the internal space per unit time by the fluid discharge unit are the same. The fluid discharge unit includes: The main discharge pipeline is connected to the main body; and Multiple branch pipelines, which are connected to the main discharge pipeline. The plurality of branch lines include: A flow line, branching from the main discharge line, is equipped with a first discharge valve and a back pressure regulator configured to maintain the pressure in the internal space at a set pressure; and A pulse discharge line, which branches off from the main discharge line, is equipped with a fourth discharge valve and an orifice configured to control the discharge flow rate of the drying fluid.

16. The apparatus of claim 15, wherein the fluid discharge unit comprises: A discharge line, configured to branch off from the main discharge line and reduce pressure in the internal space. The controller controls the fluid supply unit and the fluid discharge unit such that, during the execution of the flow step, the first discharge valve remains open to release the dry fluid through the main discharge line and the flow line.

17. The apparatus of claim 16, wherein the discharge line comprises: A rapid discharge line, on which a third discharge valve is installed; and A slow discharge line, on which a second discharge valve is installed, wherein the amount of the dried fluid released per unit time through the slow discharge line is less than the amount of the dried fluid released per unit time through the fast discharge line, and The controller controls the second discharge valve and the third discharge valve such that, in the discharge step, after the dry fluid is released through the slow discharge line, the dry fluid is released through the fast discharge line.