Light-emitting panel and display device

Abstract

The application discloses a light-emitting panel and a display device, and belongs to the technical field of display. The light-emitting panel comprises a substrate, a plurality of driving transistors and a plurality of light-emitting elements. One driving transistor is electrically connected with at least one light-emitting element. The plurality of light-emitting elements are arranged in an array on the substrate. The plurality of light-emitting elements are arranged along a first direction to form a light-emitting element row, and are arranged along a second direction to form a light-emitting element column. In the direction parallel to the plane where the substrate is located, the first direction and the second direction intersect. In the direction parallel to the plane where the substrate is located, the number of driving transistors adjacent to one light-emitting element is A, and A is less than 2. The display device comprises the light-emitting panel. The application can improve the light shadow phenomenon caused by the low local brightness of the light-emitting panel, and further improve the light-emitting uniformity and light-emitting quality of the light-emitting panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, more particularly, to a light-emitting panel and a display device. BACKGROUND

[0002] With the advent of the era of ultra-high-definition display, higher requirements are put forward for display quality and resolution specifications, and LED (Light-Emitting Diode) display technology shows more excellent performance than LCD (Liquid Crystal Display) and OLED (Organic Light-Emitting Diode), so Mini / Micro LED is the most promising new display technology in the display field.

[0003] Usually, a plurality of light-emitting elements and signal lines connected with the light-emitting elements are provided on the Mini / Micro LED display device, and the light-emitting elements can receive signals via the signal lines to emit light display. The light-emitting elements also have switching devices connected with each light-emitting element as switches, and the conduction time of the switching devices is controlled by outputting different pulse width modulation signals (PWM) to the signal lines to adjust the light-emitting brightness of each light-emitting element.

[0004] However, the conventional switching devices such as mos tubes in the prior art are mostly large in size and black, and after the panel is lighted and emits light, the switching devices will absorb and block the light emitted by the light-emitting elements, causing local brightness to be too low, causing the problem of light shadow, and affecting the light-emitting effect.

[0005] Therefore, it is a technical problem to be solved by those skilled in the art to provide a light-emitting panel and a display device which can avoid the problem of local brightness being too low to produce light shadow, reduce the influence of the switching device on the light path, and improve the light-emitting effect. SUMMARY

[0006] Therefore, the present application provides a light-emitting panel and a display device to solve the problem that the light-emitting panel in the prior art is prone to have local brightness being too low to produce light shadow, which affects the light-emitting effect.

[0007] The present invention discloses a light-emitting panel, comprising: a base substrate and a plurality of driving transistors and a plurality of light-emitting elements located on the base substrate; a driving transistor is electrically connected to at least one light-emitting element; a plurality of light-emitting elements are arranged in an array on the base substrate, wherein the plurality of light-emitting elements are arranged along a first direction to form light-emitting element rows, and the plurality of light-emitting elements are arranged along a second direction to form light-emitting element columns; wherein, in a direction parallel to the plane where the base substrate is located, the first direction and the second direction intersect; and in a direction parallel to the plane where the base substrate is located, the number of driving transistors adjacent to a light-emitting element is A, and A is less than 2.

[0008] Based on the same inventive concept, the present invention also discloses a display device, which includes the above-mentioned light-emitting panel.

[0009] Compared with the prior art, the light-emitting panel and display device provided by the present invention achieve at least the following beneficial effects:

[0010] In the light-emitting panel of the present invention, the number of driving transistors adjacent to a light-emitting element in a direction parallel to the plane of the substrate is less than 2, and the driving transistors are dispersedly arranged on the substrate of the light-emitting panel. By improving the relative position of the driving transistors and the light-emitting elements, the driving transistors are avoided from being clustered in local areas. This can avoid the presence of multiple driving transistors around a light-emitting element to block light, and can also make the driving transistors absorb light more evenly on the substrate, reducing the influence of the driving transistors on the light path of the light-emitting element, and trying to avoid the phenomenon that there are a large number of driving transistors around the light-emitting elements in a certain area, and the area absorbs light severely when the panel is lit. This can improve the lamp shadow phenomenon caused by the local low brightness of the light-emitting panel, and is beneficial to improving the uniformity of the light-emitting panel and improving the light-emitting quality.

[0011] Of course, any product implementing the present invention does not necessarily need to achieve all of the above-mentioned technical effects at the same time.

[0012] Further features and advantages of the present invention will become apparent from the following detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0014] Figure 1 This is a schematic diagram of a planar structure of a light-emitting panel in the related art;

[0015] Figure 2 yes Figure 1 Schematic diagram of the optical simulation structure after the P' area is lit;

[0016] Figure 3 This is a schematic diagram of a planar structure of a light-emitting panel provided by an embodiment of the present invention;

[0017] Figure 4 yes Figure 3 A schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the middle light-emitting panel;

[0018] Figure 5 yes Figure 4 Schematic diagram of equivalent circuit connection between the driving transistor and the light-emitting element;

[0019] Figure 6 yes Figure 4 A driving timing diagram of the light-emitting panel is provided;

[0020] Figure 7 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0021] Figure 8 yes Figure 3 Schematic diagram of the optical simulation structure after the P area is lit;

[0022] Figure 9 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0023] Figure 10 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0024] Figure 11 yes Figure 10 A schematic diagram of the planar structure of a partition in the provided light-emitting panel;

[0025] Figure 12 yes Figure 10 A schematic diagram of the plan structure of another partition in the provided light-emitting panel;

[0026] Figure 13 is a schematic diagram of a planar arrangement structure of a first partition included in the light-emitting panel provided by an embodiment of the present invention;

[0027] Figure 14 is a schematic diagram of a planar arrangement structure of another first partition included in the light-emitting panel provided by an embodiment of the present invention;

[0028] Figure 15 is a schematic diagram of a planar arrangement structure of a second partition included in the light-emitting panel provided by an embodiment of the present invention;

[0029] Figure 16 is a schematic diagram of a planar arrangement structure of another second partition included in the light-emitting panel provided in an embodiment of the present invention;

[0030] Figure 17 is a schematic diagram of a planar arrangement structure of a third subarea included in the light-emitting panel provided in an embodiment of the present invention;

[0031] Figure 18 is a schematic diagram of a planar arrangement structure of another third subarea included in the light-emitting panel provided in an embodiment of the present invention;

[0032] Figure 19 1 is a schematic diagram of a planar arrangement structure of a fourth subarea included in the light-emitting panel provided in an embodiment of the present invention;

[0033] Figure 20 is a schematic diagram of a planar arrangement structure of another fourth subarea included in the light-emitting panel provided in an embodiment of the present invention;

[0034] Figure 21 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0035] Figure 22 yes Figure 21 A schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the middle light-emitting panel;

[0036] Figure 23 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0037] Figure 24 This is a schematic diagram of the arrangement structure of a repeating unit provided by an embodiment of the present invention;

[0038] Figure 25 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0039] Figure 26 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0040] Figure 27 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0041] Figure 28 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0042] Figure 29 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0043] Figure 30 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0044] Figure 31 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0045] Figure 32 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0046] Figure 33 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0047] Figure 34 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0048] Figure 35 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0049] Figure 36 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0050] Figure 37 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0051] Figure 38 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0052] Figure 39 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0053] Figure 40 yes Figure 39 A schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the middle light-emitting panel;

[0054] Figure 41 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0055] Figure 42 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0056] Figure 43 yes Figure 42 A schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the middle light-emitting panel;

[0057] Figure 44 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0058] Figure 45 Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention;

[0059] Figure 46 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0060] Figure 47 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0061] Figure 48 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0062] Figure 49 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0063] Figure 50 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0064] Figure 51 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0065] Figure 52 yes Figure 46 A schematic diagram of the structure of a repeating unit in ;

[0066] Figure 53 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0067] Figure 54 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0068] Figure 55 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0069] Figure 56 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0070] Figure 57 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0071] Figure 58 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0072] Figure 59 yes Figure 53 A schematic diagram of the structure of a repeating unit in ;

[0073] Figure 60 yes Figure 54 A schematic diagram of the structure of a repeating unit in ;

[0074] Figure 61 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0075] Figure 62 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0076] Figure 63 yes Figure 62 Schematic diagram of the cross-sectional structure of A-A';

[0077] Figure 64 yes Figure 62 Another cross-sectional structural diagram of A-A';

[0078] Figure 65 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention;

[0079] Figure 66 It is a structural schematic diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0080] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention.

[0081] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0082] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0083] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0084] It should be noted that like reference numerals and letters refer to like items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0085] In related technologies, such as Figure 1 and Figure 2 As shown, Figure 1 This is a schematic diagram of a planar structure of a light-emitting panel in related technology. Figure 2 yes Figure 1 The optical simulation structure diagram after the P' area in the figure is lit is shown in the figure below. Figure 1The light emitting panel 000' shown in FIG. 1 is generally provided with a plurality of light emitting elements 20' and signal lines ( Figure 1 (not shown in the figure), the light emitting element 20' can receive a signal via the signal line to emit light for display. The light emitting element 20' further includes a switch device 10' connected to each light emitting element 20' as a switch. When the switch device 10' is turned on, different pulse width modulation signals are output to the signal line to control the conduction time of these switch devices 10', thereby adjusting the light emitting brightness of each light emitting element 20' ( Figure 1 Only the arrangement of the light emitting elements 20' and the switch devices 10' in the panel is shown, and the electrical connection relationship is not shown). However, most conventional switch devices 10' are large in size and black. Figure 1 The arrangement mode of the light emitting element 20' is such that there are many switch devices 10' around the light emitting element 20'. When the panel is lit, the switch devices 10' will absorb and block the light emitted by the light emitting element 20', causing the local brightness to be low. Figure 2 The brightness of part of the P' area in the panel shown is relatively low, so a lamp shadow problem will appear, affecting the lighting effect.

[0086] To address the above issues, this application proposes a light-emitting panel and display device that can avoid the problem of light shadows caused by localized low brightness, reduce the impact of switching devices on the light path, and improve the lighting effect. Specific embodiments of the light-emitting panel and display device proposed in this application are described in detail below.

[0087] Please refer to Figure 3-Figure 5 , Figure 3 is a schematic diagram of a planar structure of a light-emitting panel provided by an embodiment of the present invention, Figure 4 yes Figure 3 Schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the light-emitting panel, Figure 5 yes Figure 4 Schematic diagram of the equivalent circuit connection between the driving transistor and the light-emitting element (it can be understood that Figure 3 The light-emitting panel 000 provided in this embodiment only illustrates the arrangement of the light-emitting elements and the driving transistors in the light-emitting panel, and does not represent the actual driving and electrical connection relationship. The light-emitting panel 000 provided in this embodiment includes: a base substrate 00 and a plurality of driving transistors 10 and a plurality of light-emitting elements 20 (not filled in the figure) located on the base substrate 00; one driving transistor 10 is electrically connected to at least one light-emitting element 20;

[0088] A plurality of light-emitting elements 20 are arranged in an array on a base substrate 00. The plurality of light-emitting elements 20 are arranged along a first direction X to form light-emitting element rows 20H, and the plurality of light-emitting elements 20 are arranged along a second direction Y to form light-emitting element columns 20L. The first direction X and the second direction Y intersect in a direction parallel to the plane of the base substrate 00. Optionally, this embodiment is described by taking an example in which the first direction X and the second direction Y are perpendicular to each other in a direction parallel to the plane of the base substrate 00.

[0089] In a direction parallel to the plane where the base substrate 00 is located, the number of driving transistors 10 adjacent to one light emitting element 20 is A, A<2, and A is an integer.

[0090] Specifically, the light-emitting panel 000 provided in this embodiment can be a sub-millimeter light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED) light-emitting panel. The light-emitting panel 000 includes a substrate 00 and a plurality of driving transistors 10 and a plurality of light-emitting elements 20 located on the substrate 00. The light-emitting element 20 includes a micro light-emitting diode or a sub-millimeter light-emitting diode. A driving transistor 10 is electrically connected to at least one light-emitting element 20. Image display is achieved by integrating a high-density array of tiny-sized light-emitting elements 20 on a substrate 00 as display pixels. Optionally, each display pixel can be addressed and individually driven to light up. The light-emitting panel 000 of this embodiment can reduce the pixel distance from the millimeter level to the micron level, and is a self-luminous display with the advantages of better material stability, longer life, and no image burn-in.

[0091] The light emitting panel 000 of this embodiment may further include a driving transistor 10. The driving transistor 10 is used as a switching element to realize whether the light emitting element 20 is energized or not. Figure 5 As shown, the gate of the driving transistor 10 is electrically connected to a driving signal line K, and the driving signal line K provides a PWM driving signal (pulse width modulation signal, Pulse Width Modulation) for the gate of each driving transistor 10, that is, the driving signal line K can provide a pulse width modulation signal through a driving chip (not shown in the figure), and different gray scales of the light-emitting element 20 can be achieved by adjusting the different pulse widths (duty cycles) of the PWM driving signal input by the driving chip. The larger the optional duty cycle, the greater the brightness.

[0092] It can be understood that the light emitting panel 000 in the embodiment can include a plurality of light emitting units, each of which can include one driving transistor 10 and at least one light emitting element 20 (each of which can include one driving transistor 10 and a plurality of light emitting elements 20), and the gate of the driving transistor 10 in each light emitting unit is electrically connected to one driving signal line K, that is, each light emitting unit independently leads out one driving signal line K, and each driving signal line K independently inputs one driving signal to the gate of the driving transistor 10 for controlling the brightness of the plurality of light emitting elements 20 in the light emitting unit.

[0093] As shown in Figure 4 and Figure 5 , the light emitting panel 000 of the embodiment can further include a plurality of other signal lines, such as a first voltage signal line PVDD and a second voltage signal line PVEE, the first electrode of the driving transistor 10 is electrically connected to the negative electrode of the light emitting element 20, the second electrode of the driving transistor 10 is electrically connected to the second voltage signal line PVEE, and the positive electrode of the light emitting element 20 is electrically connected to the first voltage signal line PVDD. The first voltage signal line PVDD is used to input a PVDD voltage signal to the light emitting panel, and the second voltage signal line PVEE is used to input a PVEE voltage signal to the light emitting panel, and the PVDD voltage signal and the PVEE voltage signal can be provided by an external power supply. The brightness (i.e. gray scale) of the light emitting element 20 is controlled by the power-on time of the light emitting element 20. Optionally, the input voltage of the second voltage signal line PVEE can be a fixed voltage, and further optionally, the input voltage of the second voltage signal line PVEE is zero, and the input voltage of the first voltage signal line PVDD is greater than or equal to the threshold voltage of the light emitting element 20. Since the light emitting element 20 is driven in PWM mode, the value of the PVDD voltage signal depends on the threshold voltage of the light emitting element 20, so the input voltage of the first voltage signal line PVDD needs to be greater than or equal to the threshold voltage of the light emitting element 20, and the value of the PVEE voltage signal is generally zero, so the input voltage of the second voltage signal line PVEE is zero.

[0094] Optionally, please refer to Figure 4 and Figure 6 , Figure 6 is Figure 4 a driving timing diagram of the light emitting panel provided by the present application, the PVDD voltage signal and the PVEE voltage signal can both be constant voltages, and each first voltage signal line PVDD can input in time during the driving process, such as Figure 6As shown; or each first voltage signal line PVDD can also be fed with a PVDD voltage signal at the same time (not shown in the figure), and the PVEE voltage signal can be simultaneously input to each second voltage signal line PVEE on the light-emitting panel 000. This embodiment does not specifically limit the method of inputting the PVDD voltage signal. During specific implementation, the setting can be selected according to actual needs.

[0095] The different grayscales of the light-emitting element 20 of this embodiment are achieved by adjusting the different pulse widths (duty cycles) of the PWM drive signal input by the driver chip. The larger the duty cycle, the greater the brightness. Each driving transistor 10 can be controlled individually without the need for scanning drive control. The control is simple, flexible, and has good dynamic response, which is conducive to improving contrast.

[0096] In this embodiment, the number of driving transistors 10 adjacent to a light-emitting element 20 in a direction parallel to the plane of the substrate 00 is A, where A<2, wherein the range adjacent to a light-emitting element 20 refers to the light-emitting elements 20 arranged in the array, including the position of the light-emitting element 20 itself and the range from the boundary of the light-emitting element 20 itself to the nearest boundary of any other light-emitting element 20 adjacent to it, such as Figure 3 As shown, the other plurality of light emitting elements 20 adjacent to the light emitting element 20A are light emitting element 20B, light emitting element 20C, light emitting element 20D, light emitting element 20E, light emitting element 20F, light emitting element 20G, light emitting element 20I, and light emitting element 20J. Figure 3 The position of the light emitting element 20A itself and the range from the boundary of the light emitting element 20A to the nearest boundary of any light emitting element 20 adjacent to the light emitting element 20A are shown as region Q. Within the region Q, the number of driving transistors 10 is less than 2, that is, the number of driving transistors 10 within the region Q is 0 or 1, so that the layout of the driving transistors 10 on the light emitting panel can meet the requirement that the number of driving transistors 10 adjacent to one light emitting element 20 is less than 2. It can be understood that in this embodiment, Figure 3 The illustrated range adjacent to a light emitting element 20 is merely an illustration. In specific implementations, the adjacent structures include but are not limited to this arrangement.

[0097] In this embodiment, the driving transistors 10 are dispersedly arranged on the base substrate 00 of the light-emitting panel 000. By improving the relative positions of the driving transistors 10 and the light-emitting elements 20, the driving transistors 10 are prevented from being clustered in local areas. This prevents light from being blocked by multiple driving transistors 10 around a single light-emitting element 20. Furthermore, the driving transistors 10 absorb light more evenly on the base substrate 00, reducing their impact on the light path of the light-emitting element 20. This minimizes the situation where a large number of driving transistors 10 are located around a light-emitting element 20 in a certain area, resulting in severe light absorption in that area when the panel is illuminated. This improves the shadow phenomenon caused by low local brightness on the light-emitting panel 000, thereby improving the uniformity and quality of the light emitted by the light-emitting panel. Furthermore, because this embodiment improves the relative positions of the driving transistors 10 and the light-emitting elements 20 to avoid clustering the driving transistors 10 in local areas, the driving signal lines K connected to the driving transistors 10 can also be prevented from being too numerous in the same area. This reduces the risk of short circuits and corrosion between different driving signal lines K, thereby ensuring product yield.

[0098] It is understandable that the Figure 3 FIG2 shows an arrangement mode in which the number of driving transistors 10 adjacent to one light emitting element 20 is less than 2 in a direction parallel to the plane of the substrate 00 when the number of driving transistors 10 in the light emitting panel is less than the number of light emitting elements 20. Figure 7 As shown, Figure 7 is another planar structural diagram of the light emitting panel provided by an embodiment of the present invention (it can be understood that Figure 7 The arrangement of the light emitting elements and the driving transistors in the light emitting panel is only shown, and does not represent the actual driving and electrical connection relationship). The arrangement of the light emitting elements 20 and the driving transistors in the light emitting panel in this embodiment can also be as follows: Figure 7 As shown, one light-emitting element 20 corresponds to one driving transistor 10. That is, when the number of light-emitting elements 20 and driving transistors 10 is the same in some light-emitting panels, they can also be arranged in a direction parallel to the plane where the base substrate 00 is located, and the number of driving transistors 10 adjacent to one light-emitting element 20 is less than 2. In this case, the number of driving transistors 10 adjacent to the light-emitting elements 20 at some positions in the light-emitting panel 000 can be less than 2, as shown in FIG. Figure 7Within the range indicated by region R in FIG, the number of driving transistors 10 adjacent to a light-emitting element 20 within the range indicated by region Q is 1, satisfying that the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, thereby improving the lamp shadow problem within the range of region R, that is, improving the lamp shadow problem in a local area of ​​the light-emitting panel 000. In specific implementation, this embodiment does not specifically limit whether the number of driving transistors 10 adjacent to a light-emitting element 20 in a local area of ​​the light-emitting panel is less than 2, or whether the number of driving transistors 10 adjacent to a light-emitting element 20 in all areas is less than 2, and can be selected according to actual needs.

[0099] Combine Figure 2 and Figure 8 As shown, Figure 8 yes Figure 3 Schematic diagram of the optical simulation structure after the P area in the image is lit, Figure 8 and Figure 2 By comparison, it can be seen that in this embodiment, the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2 in a direction parallel to the plane of the base substrate 00, and the brightness uniformity is better, which can significantly improve the lamp shadow problem and enhance the lighting effect.

[0100] It is understandable that the Figure 3 The diagram is merely an example of an arrangement that satisfies the requirement that the number of driving transistors 10 adjacent to a light-emitting element 20 in a direction parallel to the plane of the base substrate 00 is less than 2. Specific implementation includes but is not limited to this arrangement structure, and may also include other arrangements that can improve the lamp shadow phenomenon, which is not specifically limited in this embodiment.

[0101] It is understandable that this embodiment is only an example of a wiring method of multiple first voltage signal lines PVDD, multiple second voltage signal lines PVEE, and multiple driving signal lines K on the light emitting panel 000. Figure 4As shown, in this embodiment, the multiple first voltage signal lines PVDD and the multiple second voltage signal lines PVEE can extend in the same direction, and a plurality of conductive pads can be provided in the binding area of ​​the light-emitting panel (the binding area is used for binding and electrically connecting with an external driver chip or a flexible circuit board), each first voltage signal line PVDD can be electrically connected to a conductive pad, or the multiple first voltage signal lines PVDD on the light-emitting panel 000 can be connected to each other through jumper wires and then electrically connected to a conductive pad in the binding area to achieve transmission of the PVDD voltage signal, and the multiple second voltage signal lines PVEE in the light-emitting panel can be connected together through jumper wires and then electrically connected to a conductive pad in the binding area to achieve transmission of the PVEE voltage signal. Optionally, the extension direction of the drive signal line K in this embodiment can be the same as or different from the extension direction of the first voltage signal line PVDD and the second voltage signal line PVEE. The multiple drive signal lines K can be connected to different conductive pads in the binding area to provide drive signals for the drive transistor 10. In specific implementation, the wiring method of various signal lines on the light-emitting panel includes but is not limited to Figure 4 As shown, other wirings can also be used, as long as the gate of the driving transistor 10 is connected to a driving signal line K, the first electrode of the driving transistor 10 is electrically connected to the negative electrode of the light-emitting element 20, the second electrode of the driving transistor 10 is electrically connected to the second voltage signal line PVEE, and the positive electrode of the light-emitting element 20 is electrically connected to the first voltage signal line PVDD. This embodiment is not described in detail here.

[0102] Optionally, the driving transistor 10 of this embodiment may be a thin-film transistor (TFT). TFTs have the dual characteristics of being active like a transistor and being thin like a film. TFTs are a type of field-effect transistor. They are generally manufactured by depositing various thin films, such as a semiconductor active layer, a dielectric layer, and a metal electrode layer, on a substrate. TFTs play a crucial role in the performance of display devices.

[0103] Optionally, the driving transistor 10 of this embodiment may also be a metal oxide semiconductor field effect transistor. A metal oxide semiconductor field effect transistor (MOSFET) is a field effect transistor that can be widely used in analog circuits and digital circuits. Metal oxide semiconductor field effect transistors can be divided into N-channel types with electrons in the majority and P-channel types with holes in the majority, depending on the polarity of their channels. They are usually called N-type metal oxide semiconductor field effect transistors (NMOSFET) and P-type metal oxide semiconductor field effect transistors (PMOSFET). This embodiment does not specifically limit whether the driving transistor 10 is an N-channel type or a P-channel type. The driving transistor 10 of this embodiment serves as a switching element. Since the metal oxide semiconductor field effect transistor is a voltage-controlled device, it is beneficial to save power consumption.

[0104] It should be noted that the figure of this embodiment only illustrates the structure of the light-emitting panel. In specific implementation, the structure of the light-emitting panel includes but is not limited to this, and may also include other structures that can realize the display function. For specific understanding, please refer to the structure of the Mini LED or Micro LED light-emitting panel in the relevant technology. This embodiment will not be described in detail here.

[0105] It should be further explained that the shapes and sizes of the light-emitting element 20 and the driving transistor 10 in the figure of this embodiment are only for reference. In specific implementation, the actual size of the driving transistor 10 may be larger than the actual size of the light-emitting element 20, the actual size of the driving transistor 10 may be equal to the actual size of the light-emitting element 20, or the actual size of the driving transistor 10 may be smaller than the actual size of the light-emitting element 20. The shapes of the light-emitting element 20 and the driving transistor 10 may also be the same or different, or may be other shapes, which are not specifically limited in this embodiment.

[0106] Optionally, the light-emitting panel 000 provided in this embodiment can be used directly as a display panel, thereby improving display uniformity and display quality. Alternatively, the light-emitting panel provided in this embodiment can be used as a backlight for a liquid crystal display panel, thereby improving the uniformity of the light-emitting panel's light emission by alleviating lamp shadow issues, thereby providing a uniform backlight for the liquid crystal display panel and improving the display quality. This embodiment does not specifically limit the use of the light-emitting panel 000, and during implementation, the configuration can be selected based on actual needs.

[0107] In some optional embodiments, please continue to refer to Figure 3 and Figure 4 In this embodiment, in a direction parallel to the plane of the substrate, the driving transistor 10 is located between two adjacent light emitting elements 20 .

[0108] This embodiment explains that in a direction parallel to the plane where the substrate 00 is located, the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, that is, when the number of driving transistors 10 adjacent to a light-emitting element 20 is 1, the driving transistor 10 is located between two adjacent light-emitting elements 20 in a direction parallel to the plane where the substrate is located, so as to at least achieve a shorter length of the electrical connection line between the light-emitting element 20 closest to it, which is beneficial to reducing the impedance of the electrical connection line and improving the transmission performance.

[0109] Optional, such as Figure 3 and Figure 9 As shown, Figure 9 is another planar structural diagram of the light emitting panel provided by an embodiment of the present invention (it can be understood that Figure 9 The arrangement of the light-emitting elements and the driving transistor in the light-emitting panel is only schematically shown, and does not represent the actual driving and electrical connection relationship, which will not be described in detail in the following embodiments. In this embodiment, in a direction parallel to the plane where the substrate is located, the driving transistor 10 is located between two adjacent light-emitting elements 20 in the light-emitting element row 20H (such as Figure 9 Alternatively, the driving transistor 10 is located between two adjacent light emitting elements 20 in the light emitting element column 20L (as shown in FIG. Figure 3 shown).

[0110] This embodiment explains that when the number of driving transistors 10 adjacent to a light emitting element 20 is 1, the driving transistor 10 is located between two adjacent light emitting elements 20 in a direction parallel to the plane where the substrate is located, which can be as follows: Figure 9 The driving transistor 10 shown is located between two adjacent light emitting elements 20 in the light emitting element row 20H, or may be as follows: Figure 3 The driving transistor 10 shown is located between two adjacent light emitting elements 20 in the light emitting element column 20L, so as to shorten the length of the electrical connection line between at least one driving transistor 10 and its nearest light emitting element 20, thereby reducing the impedance of the electrical connection line and improving the transmission performance.

[0111] Optional, such as Figure 10 As shown, Figure 10 This is another planar structural schematic diagram of the light-emitting panel provided by an embodiment of the present invention. In this embodiment, along the third direction O, the driving transistor 10 is located between two adjacent light-emitting elements 20; wherein, in the direction parallel to the plane of the base substrate 00, the angle between the third direction O and the first direction X is an acute angle, and the angle between the third direction O and the second direction Y is an acute angle.

[0112] This embodiment explains that in a direction parallel to the plane of the substrate 00, the number of driving transistors 10 adjacent to one light emitting element 20 is less than 2, that is, when the number of driving transistors 10 adjacent to one light emitting element 20 is 1, in the third direction O, the one driving transistor 10 can be located between two adjacent light emitting elements 20, that is, Figure 10 As shown, a single driver transistor 10 is located in the middle of the quadrilateral space formed by four light-emitting elements 20, thereby improving the luminous effect and providing space between two adjacent light-emitting elements 20 in the light-emitting element row 20H and the light-emitting element column 20L, thereby preventing light blocking. Because the distance W1 between two adjacent light-emitting elements 20 in the third direction O is greater than the distance W2 between two adjacent light-emitting elements 20 in the light-emitting element row 20H, and the distance between two adjacent light-emitting elements 20 in the third direction O is greater than the distance between two adjacent light-emitting elements 20 in the light-emitting element column 20L, even if the single driver transistor 10 is located between two adjacent light-emitting elements 20 in the third direction O, the greater distance minimizes the effects of light blocking and light absorption on the light-emitting elements 20, thereby further improving the luminous effect.

[0113] In some optional embodiments, please refer to Figure 3-Figure 6 、 Figure 10 、 Figure 11 and Figure 12 , Figure 11 yes Figure 10 A schematic diagram of the planar structure of a partition in the provided luminous panel is provided. Figure 12 yes Figure 10 A schematic diagram of the planar structure of another partition in the light-emitting panel is provided (it can be understood that Figure 11 and Figure 12 The diagram only illustrates the arrangement of the light-emitting elements and the driving transistors in one partition of the light-emitting panel, and does not represent the actual driving and electrical connection relationship. In this embodiment, the light-emitting panel 000 includes at least one partition AA1.

[0114] In one subarea AA1, the light-emitting elements 20 are arranged along the fourth direction h to form a first subarea AA11, and the light-emitting elements 20 are arranged along the fifth direction j to form a second subarea AA12; wherein the fourth direction h is the same as the first direction X, and the fifth direction j is the same as the second direction Y; or, the fourth direction h is the same as the second direction Y, and the fifth direction j is the same as the first direction X;

[0115] In one partition AA1 , the number of the light-emitting elements 20 is greater than or equal to 3B, and the number of the driving transistors 10 is 2; wherein 1≤B≤4.

[0116] The present embodiment explains that in the light emitting panel 000, in order to make the number of driving transistors 10 adjacent to one light emitting element 20 less than 2 in the direction parallel to the plane where the substrate 00 is located, i.e. the number of driving transistors 10 adjacent to one light emitting element 20 is 1 or 0, any one of the partitions AA1 can be found on the light emitting panel 000, in which partition AA1, the light emitting elements 20 are arranged in the fourth direction h to form a first sub-area AA11, and the light emitting elements 20 are arranged in the fifth direction j to form a second sub-area AA12. For example, in the partition AA1, there is only one light emitting element 20 in the fourth direction h, and the area where the one light emitting element 20 is located forms the first sub-area AA11. For example, in the partition AA1, there are multiple light emitting elements 20 in the fourth direction h, and the area of the multiple light emitting elements 20 in the fourth direction h forms the first sub-area AA11. For example, in the partition AA1, there is only one light emitting element 20 in the fifth direction j, and the area where the one light emitting element 20 is located forms the second sub-area AA12. For example, in the partition AA1, there are multiple light emitting elements 20 in the fifth direction j, and the area of the multiple light emitting elements 20 in the fifth direction j forms the second sub-area AA12. For example, Figure 10 and Figure 11 as shown, Figure 10 the light emitting panel 000 in Figure 11 may include at least one or more partitions AA1 in which the light emitting elements 20 are arranged in the fourth direction h to form a first sub-area AA11, and the light emitting elements 20 are arranged in the fifth direction j to form a second sub-area AA12, and the fourth direction h is the same as the first direction X, and the fifth direction j is the same as the second direction Y;

[0117] or, for example, Figure 10 and Figure 12 as shown, Figure 10 the light emitting panel 000 in Figure 12 may include at least one or more partitions AA1 in which the light emitting elements 20 are arranged in the fourth direction h to form a first sub-area AA11, and the light emitting elements 20 are arranged in the fifth direction j to form a second sub-area AA12, and the fourth direction h is the same as the second direction Y, and the fifth direction j is the same as the first direction X;

[0118] It can be understood that the light emitting panel 000 in Figure 11 and Figure 12The illustrated partitions AA1 are all exemplified by taking the case where the number of light-emitting elements 20 in a partition AA1 is equal to 3 or 6. In some other optional embodiments, the light-emitting panel 000 may include at least one or more partitions AA1, in which the number of light-emitting elements 20 may be greater than or equal to 3B, 1≤B≤4 and B is an integer. The arrangement of such partitions AA1 can make the number of driving transistors 10 adjacent to a light-emitting element 20 in the light-emitting panel 000 in a direction parallel to the plane of the base substrate 00 less than 2, thereby meeting the requirements of improving lamp shadows and enhancing lighting effects.

[0119] Optional, such as Figure 13 and Figure 14 As shown, Figure 13 is a schematic diagram of a planar arrangement structure of a first partition included in the light-emitting panel provided in an embodiment of the present invention, Figure 14 2 is a schematic diagram of a planar arrangement structure of another first subarea included in a light-emitting panel provided in an embodiment of the present invention. In this embodiment, the subarea AA1 of the light-emitting panel 000 may include a first subarea AA1a. The arrangement structure of the first subarea AA1a may include three light-emitting elements 20 and two driving transistors 10. The three light-emitting elements 20 are arranged along the fourth direction h to form a first subarea AA11. Along the fifth direction j, one light-emitting element 20 forms a second subarea AA12.

[0120] Along the fifth direction j, the two driving transistors 10 are located in the same first sub-area AA11;

[0121] Along the fourth direction h, the two driving transistors 10 are respectively located in two non-adjacent second sub-areas AA12. The non-adjacent second sub-areas AA12 refer to two non-adjacent second sub-areas AA12 along the fourth direction h, and there is another second sub-area AA12 between the two second sub-areas AA12. The two second sub-areas AA12 are separated by the other second sub-areas AA12.

[0122] This embodiment explains that the subarea AA1 can be arranged in the first subarea AA1a. In one subarea AA1, namely the first subarea AA1a, the number of light emitting elements 20 is 3 and the number of driving transistors 10 is 2. Optionally, in the first subarea AA11, Figure 13 As shown, a driving transistor 10 can be located between two adjacent light-emitting elements 20, and the driving transistor 10 is on the connection line of the three light-emitting elements 20 in the first sub-area AA11. In this case, the electrical connection line between the driving transistor 10 and the light-emitting element 20 can be set shorter to achieve electrical connection; or as shown in FIG. Figure 14As shown, one driving transistor 10 can be located between two adjacent light emitting elements 20 and the driving transistor 10 is not on the connection line of the three light emitting elements 20 in the first sub-area AA11, at this time, the light of the three light emitting elements 20 in the same first sub-area AA11 can be avoided from being blocked by the driving transistor 10; the arrangement structure of the first sub-area AA1a in the embodiment can meet the requirement of improving the light shadow and improving the light emitting effect while one first sub-area AA1a includes two driving transistors 10. Figure 13 And Figure 14 The arrangement structure of the first sub-area AA1a shown in the embodiment can meet the requirement of improving the light shadow and improving the light emitting effect while one first sub-area AA1a includes two driving transistors 10.

[0123] It can be understood that the fourth direction h of the first sub-area AA1a in the embodiment can be the same as the first direction X in the light emitting panel 000, and the fifth direction j can be the same as the second direction Y, as shown in Figure 13 And Figure 14 The fourth direction h of the first sub-area AA1a can be the same as the second direction Y, and the fifth direction j can be the same as the first direction X (not shown in the figure), and the specific implementation can be set according to the layout requirement of the light emitting panel, and only the number of driving transistors 10 adjacent to one light emitting element 20 is less than 2, and the embodiment is not limited in specific implementation.

[0124] Optionally, as shown in Figure 15 And Figure 16 , Figure 15 is a planar arrangement structure diagram of a second sub-area included in the light emitting panel provided by the embodiment of the present application, Figure 16 is another planar arrangement structure diagram of a second sub-area included in the light emitting panel provided by the embodiment of the present application, and the sub-area AA1 of the light emitting panel 000 in the embodiment can include a second sub-area AA1b, and one second sub-area AA1b includes six light emitting elements 20 and two driving transistors 10.

[0125] Three light emitting elements 20 are arranged along the fourth direction h to form a first sub-area AA11, and two light emitting elements 20 are arranged along the fifth direction j to form a second sub-area AA12.

[0126] Along the fifth direction j, two driving transistors 10 are respectively located in two adjacent first sub-areas AA11.

[0127] Along the fourth direction h, two driving transistors 10 are respectively located in two non-adjacent second sub-areas AA12. Among them, the two non-adjacent second sub-areas AA12 means that along the fourth direction h, the two second sub-areas AA12 further include other second sub-areas AA12, and the two second sub-areas AA12 are separated by other second sub-areas AA12.

[0128] This embodiment explains that the subarea AA1 can be arranged in a manner that the second subarea AA1b is arranged. In one subarea AA1, namely the second subarea AA1b, the number of light emitting elements 20 is 6 and the number of driving transistors 10 is 2. Optionally, in the first subarea AA11, as shown in FIG. Figure 15 As shown, a driving transistor 10 can be located between two adjacent light-emitting elements 20, and the driving transistor 10 is on the connection line of the three light-emitting elements 20 in the first sub-area AA11. In this case, the electrical connection line between the driving transistor 10 and the light-emitting element 20 can be set shorter to achieve electrical connection; or as shown in FIG. Figure 16 As shown, a driving transistor 10 can be located between two adjacent light-emitting elements 20 and the driving transistor 10 is not on the connection line of the three light-emitting elements 20 in the first sub-area AA11. In this case, the driving transistor 10 can be prevented from blocking the light of the three light-emitting elements 20 in the same first sub-area AA11. Figure 15 and Figure 16 The arrangement structure of the illustrated second partition AA1b can satisfy the requirement that one second partition AA1b includes two driving transistors 10, and can also ensure that if the light-emitting panel 000 includes the second partition AA1b of the arrangement structure, the number of driving transistors 10 adjacent to one light-emitting element 20 can be less than 2, thereby achieving the requirements of improving lamp shadow and enhancing lighting effect.

[0129] It can be understood that the fourth direction h of the second subarea AA1b of this embodiment can be the same as the first direction X in the light emitting panel 000, and the fifth direction j can be the same as the second direction Y. Figure 15 and Figure 16 As shown; alternatively, the fourth direction h of the second partition AA1b can be the same as the second direction Y, and the fifth direction j can be the same as the first direction X (not shown in the figure). In specific implementation, it can be set according to the layout requirements of the light-emitting panel, and it only needs to meet the requirement that the number of driving transistors 10 adjacent to one light-emitting element 20 is less than 2. This embodiment does not make specific limitations.

[0130] Optional, such as Figure 17 and Figure 18 As shown, Figure 17 : is a schematic diagram of a planar arrangement structure of a third partition included in the light-emitting panel provided in an embodiment of the present invention, Figure 18 1 is a schematic diagram of a planar arrangement structure of another third partition included in the light-emitting panel provided in an embodiment of the present invention. In this embodiment, the partition AA1 of the light-emitting panel 000 may include a third partition AA1c. Each third partition AA1c includes nine light-emitting elements 20 and two driving transistors 10.

[0131] Three light emitting elements 20 are arranged along the fourth direction h to form a first sub-area AA11, and three light emitting elements 20 are arranged along the fifth direction j to form a second sub-area AA12;

[0132] Along the fifth direction j, the two driving transistors 10 are respectively located in two non-adjacent first sub-areas AA11; wherein, the two non-adjacent first sub-areas AA11 refer to along the fifth direction j, and there are other first sub-areas AA11 between the two first sub-areas AA11, and the two second sub-areas AA12 will be separated by other second sub-areas AA12.

[0133] Along the fourth direction h, the two driving transistors 10 are respectively located in two non-adjacent second sub-areas AA12. The non-adjacent second sub-areas AA12 refer to two non-adjacent second sub-areas AA12 along the fourth direction h, and there is another second sub-area AA12 between the two second sub-areas AA12. The two second sub-areas AA12 are separated by the other second sub-areas AA12.

[0134] This embodiment explains that the subarea AA1 can be arranged in a third subarea AA1c. In one subarea AA1, namely the third subarea AA1c, the number of light emitting elements 20 is 9 and the number of driving transistors 10 is 2. Optionally, in the first subarea AA11, Figure 17 As shown, a driving transistor 10 can be located between two adjacent light-emitting elements 20, and the driving transistor 10 is on the connection line of the three light-emitting elements 20 in the first sub-area AA11. In this case, the electrical connection line between the driving transistor 10 and the light-emitting element 20 can be set shorter to achieve electrical connection; or as shown in FIG. Figure 17 As shown, a driving transistor 10 can be located between two adjacent light-emitting elements 20 and the driving transistor 10 is not on the connection line of the three light-emitting elements 20 in the first sub-area AA11. In this case, the driving transistor 10 can be prevented from blocking the light of the three light-emitting elements 20 in the same first sub-area AA11. Figure 17 and Figure 18 The arrangement structure of the illustrated third partition AA1c can satisfy the requirement that one third partition AA1c includes two driving transistors 10, and can also ensure that if the light-emitting panel 000 includes the third partition AA1c of the arrangement structure, the number of driving transistors 10 adjacent to one light-emitting element 20 can be less than 2, thereby achieving the requirements of improving lamp shadow and enhancing lighting effect.

[0135] It can be understood that the fourth direction h of the third subarea AA1c of this embodiment can be the same as the first direction X in the light emitting panel 000, and the fifth direction j can be the same as the second direction Y. Figure 17 and Figure 18Alternatively, the fourth direction h of the third sub-region AA1c can be the same as the second direction Y, and the fifth direction j can be the same as the first direction X (not shown in the figure). In actual implementation, the layout requirement of the light-emitting panel can be set, and it is only required to satisfy that the number of driving transistors 10 adjacent to one light-emitting element 20 is less than 2, and the embodiment is not limited in particular.

[0136] Alternatively, as shown in Figure 19 and Figure 20 , Figure 19 is a schematic diagram of a fourth sub-region planar arrangement structure included in a light-emitting panel according to an embodiment of the present application, Figure 20 is a schematic diagram of another fourth sub-region planar arrangement structure included in a light-emitting panel according to an embodiment of the present application. In the embodiment, the sub-region AA1 of the light-emitting panel 000 can include a fourth sub-region AA1d, and one fourth sub-region AA1d includes twelve light-emitting elements 20 and two driving transistors 10.

[0137] Three light-emitting elements 20 are arranged along the fourth direction h to form a first sub-region AA11, and four light-emitting elements 20 are arranged along the fifth direction j to form a second sub-region AA12.

[0138] Along the fifth direction j, two driving transistors 10 are spaced apart by two first sub-regions AA11.

[0139] Along the fourth direction h, two driving transistors 10 are respectively located in two non-adjacent second sub-regions AA12. Among them, the two non-adjacent second sub-regions AA12 means that along the fourth direction h, the two second sub-regions AA12 further include other second sub-regions AA12, and the two second sub-regions AA12 are separated by other second sub-regions AA12.

[0140] The embodiment explains the arrangement mode of the sub-region AA1 as the fourth sub-region AA1d. In one sub-region AA1, i.e., the fourth sub-region AA1d, the number of light-emitting elements 20 is 12, and the number of driving transistors 10 is 2. Alternatively, as shown in Figure 19 , one driving transistor 10 can be located between two adjacent light-emitting elements 20, and the driving transistor 10 is on the connecting line of the three light-emitting elements 20 in the first sub-region AA11. At this time, the electrical connection line between the driving transistor 10 and the light-emitting element 20 can be set to be short to achieve electrical connection; or as shown in Figure 20 , one driving transistor 10 can be located between two adjacent light-emitting elements 20, and the driving transistor 10 is not on the connecting line of the three light-emitting elements 20 in the first sub-region AA11. At this time, it can be avoided that the driving transistor 10 blocks the light of the three light-emitting elements 20 in the same first sub-region AA11. Figure 17 and Figure 18 The arrangement structure of the illustrated fourth partition AA1d can satisfy the requirement that one fourth partition AA1d includes two driving transistors 10, and can also ensure that if the light-emitting panel 000 includes the fourth partition AA1d of the arrangement structure, the number of driving transistors 10 adjacent to one light-emitting element 20 can be less than 2, thereby achieving the requirements of improving lamp shadow and enhancing lighting effect.

[0141] It can be understood that the fourth direction h of the fourth subarea AA1d of this embodiment can be the same as the first direction X in the light emitting panel 000, and the fifth direction j can be the same as the second direction Y. Figure 19 and Figure 20 As shown; alternatively, the fourth direction h of the fourth partition AA1d can be the same as the second direction Y, and the fifth direction j can be the same as the first direction X (not shown in the figure). In specific implementation, it can be set according to the layout requirements of the light-emitting panel, and it only needs to meet the requirement that the number of driving transistors 10 adjacent to one light-emitting element 20 is less than 2. This embodiment does not make specific limitations.

[0142] In some optional embodiments, the partition AA1 included in the light-emitting panel 000 may include only the first partition AA1a, or only the second partition AA1b, or only the third partition AA1c, or only the fourth partition AA1d, or the partition AA1 included in the light-emitting panel 000 may also be arranged in combination of any two, three, or four of the above four partitions. For example, in the arrangement structure of multiple light-emitting elements 20 and multiple driving transistors 10 in the light-emitting panel 000, it may include both the first partition AA1a, the second partition AA1b, the third partition AA1c, and the fourth partition AA1d. It is only necessary to satisfy that the number of driving transistors 10 adjacent to one light-emitting element 20 is less than 2. This embodiment will not be elaborated on.

[0143] Optionally, the partition AA1 included in the light-emitting panel 000 in this embodiment includes at least two or more of the first partition AA1a, the second partition AA1b, the third partition AA1c, and the fourth partition AA1d, so that the layout position of the driving transistor 10 in the entire light-emitting panel 000 can be more dispersed, which is conducive to better improving the lamp shadow problem.

[0144] In some alternative embodiments, please refer to Figure 21 , Figure 21 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 22 yes Figure 21 Schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local range on the light-emitting panel (it can be understood that Figure 21It only illustrates the arrangement of the light-emitting elements and the driving transistors in the light-emitting panel, and does not represent the actual driving and electrical connection relationship). In this embodiment, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is greater than or equal to 4:1.

[0145] This embodiment explains that the ratio of the number of light emitting elements 20 to the number of driving transistors 10 in the entire light emitting panel 000 can be greater than or equal to 4:1. Figure 21 As shown, in the entire light-emitting panel 000, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 4:1, that is, every four light-emitting elements 20 in the light-emitting panel 000 can be used as a light-emitting unit 200, and a light-emitting unit 200 is controlled by the same driving transistor 10 to emit light. The same set of PWM driving circuits can drive multiple light-emitting units 200 in different time periods, that is, one frame scanning time is divided into four parts, and within this frame time, the same driving transistor 10 sequentially controls the four light-emitting elements 20 in one light-emitting unit 200 (it can be understood that Figure 22 The four light emitting elements 20 in a light emitting unit 200 controlled by a driving transistor 10 can be Figure 22 The four circled in the middle include but are not limited to these, and may also be another four light-emitting elements 20 near the driving transistor 10. This is not limited in this embodiment, and it is only necessary that the four light-emitting elements 20 of a light-emitting unit 200 are controlled by the same driving transistor 10 to emit light). Assuming that the light-emitting panel has 2400 light-emitting elements 20, it can include 600 light-emitting units 200. At this time, only 600 driving transistors 10 need to be set in the light-emitting panel 000, which is conducive to realizing that multiple light-emitting units 200 of the light-emitting panel 000 are independently lit and illuminated, and is also conducive to reducing the number of driving transistors 10 included in the light-emitting panel 000. By coordinating the arrangement of the driving transistor 10 and the light-emitting element 20 in the above embodiment, the lamp shadow phenomenon is improved and the lighting effect is improved.

[0146] It can be understood that this embodiment is only an example of a driving method that can be adopted when the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in the entire light-emitting panel 000 is 4:1. In the entire light-emitting panel 000, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 can also be other structures greater than 4:1, such as 5:1, 6:1, 7:1, 8:1, 9:1, etc. At this time, the driving principle can refer to the method equal to 4:1 in this embodiment. The only difference is that the number of light-emitting elements 20 included in a light-emitting unit 200 is different, and this embodiment will not be repeated here.

[0147] It is understandable that the Figure 21The driving transistor 10 is only shown as an example to be located between two adjacent light emitting elements 20. In specific implementation, including but not limited to this, the specific location of the driving transistor 10 can also be other. For details, please refer to the above Figure 10 In a corresponding embodiment, a driving transistor 10 may be located in the middle of a quadrilateral space formed by four light-emitting elements 20 , etc., which will not be described in detail in this embodiment.

[0148] In some optional embodiments, please refer to Figure 21 、 Figure 22 、 Figure 23-Figure 27 , Figure 23 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 24 is a schematic diagram of the arrangement structure of a repeating unit provided in an embodiment of the present invention, Figure 25 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 26 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 27 2 is another schematic planar structural diagram of a light-emitting panel provided in an embodiment of the present invention. In this embodiment, the light-emitting panel 000 includes a plurality of repeating units 000A, each of which includes a plurality of light-emitting elements 20 arranged in an array, and further includes a plurality of driving transistors 10.

[0149] In one repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is greater than or equal to 4:1.

[0150] This embodiment illustrates that the arrangement of the light-emitting elements 20 and the driving transistors 10 in the light-emitting panel 000 can also be a structure in which multiple repeating units 000A are arranged in a certain pattern. The light-emitting panel 000 may include multiple repeating units 000A. Optionally, the multiple repeating units 000A may be arranged in a row-column array, or the multiple repeating units 000A may be staggered. The multiple repeating units 000A may be arranged in a row-column array, which can be understood as multiple identical repeating units 000A being sequentially arranged along one direction to form unit rows, and multiple identical repeating units 000A being sequentially arranged along another direction to form unit columns. The multiple repeating units 000A may also be staggered, which can be understood as multiple repeating units 000A including repeating units with different arrangements, such as repeating units with two different arrangements. In this case, the repeating units with two different arrangements are sequentially arranged in the row direction, and the repeating units with two different arrangements are also sequentially arranged in the column direction. Thus, for two different unit rows, two repeating units with the same arrangement may be located in different unit columns, forming a staggered arrangement. In this embodiment, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is greater than or equal to 4:1. For example, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 4:1. Then, in the entire light-emitting panel 000 including multiple repeating units 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 can be satisfied as 4:1; for example, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. Then, in the entire light-emitting panel 000 including multiple repeating units 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 can be satisfied as 8:1.

[0151] It is understandable that, taking the ratio of the number of light emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A as 4:1 as an example, the repeating unit can be as follows: Figure 24 The arrangement structure shown in FIG. 1 can be a light emitting panel 000 including a plurality of repeating units 000A of the structure. Figure 21 The structure shown in FIG. 1 , or taking a repeating unit 000A where the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 4:1 as an example, the repeating unit may be as follows: Figure 25 The arrangement structure shown in FIG. 1 can be a light emitting panel 000 including a plurality of repeating units 000A of the structure. Figure 23 The structure shown.

[0152] It should be noted that, in this embodiment Figure 24 and Figure 25The ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is only 4:1. In a specific implementation, the arrangement of the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is equal to 4:1 can also be other structures. For example, when a repeating unit 000A includes 8 light-emitting elements 20 and 2 driving transistors 10, the repeating unit 000A can be as follows: Figure 26 As shown, the light emitting panel 000 including a plurality of repeating units 000A of the structure can be Figure 27 The structure shown may also include other structures when implemented. It only needs to satisfy that the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is greater than or equal to 4:1, and the number of driving transistors 10 adjacent to one light-emitting element 20 in the entire light-emitting panel 000 is less than 2. This embodiment will not be described in detail.

[0153] In some optional embodiments, please refer to Figure 28 and Figure 29 , Figure 28 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 29 2 is another planar structural diagram of a light-emitting panel provided by an embodiment of the present invention. In a repeating unit 000A provided by this embodiment, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1.

[0154] This embodiment explains that in a repeating unit 000A of the light emitting panel 000, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 8:1. Then, in the entire light emitting panel 000 including multiple repeating units 000A, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 can be 8:1. Figure 28 As shown, the repeating unit 000A includes 72 light emitting elements 20 and 9 driving transistors 10. The light emitting panel 000 including a plurality of the repeating units 000A can be as follows: Figure 29 As shown, it is beneficial to further reduce the number of driving transistors 10 in the entire light-emitting panel 000, so that more panel space can be used to arrange the driving transistors 10, and the lamp shadow problem can be improved more effectively.

[0155] It is understood that the specific arrangement of the light emitting element 20 and the driving transistor 10 in the repeating unit 000A of this embodiment includes but is not limited to Figure 28 Schematic structure, Figure 28This is only one of the possible arrangements. In practice, the repeating unit 000A may be arranged in other ways, as long as the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in one repeating unit 000A is 8:1.

[0156] It should be noted that Figure 28 Taking the example that the number of light-emitting elements 20 included in a repeating unit 000A is 72 and the number of driving transistors is 9, so that the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1, in a specific implementation, the number of light-emitting elements 20 and the number of driving transistors included in a repeating unit 000A are not limited to this, and can also be other numbers, such as the number of light-emitting elements 20 included in a repeating unit 000A is 64 and the number of driving transistors is 8; or the number of light-emitting elements 20 included in a repeating unit 000A is 96 and the number of driving transistors is 12, etc., this embodiment does not make specific limitations, and it is only necessary that the light-emitting panel includes multiple repeating units 000A and the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 8:1.

[0157] Optional, please refer to Figure 28 and Figure 29 、 Figure 30 and Figure 31 , Figure 30 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 31 is another schematic planar structure diagram of a light-emitting panel provided by an embodiment of the present invention. In this embodiment, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. In at least one repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L is less than or equal to 2. It should be understood that the number of light-emitting elements 20 in a light-emitting element row 20H in a repeating unit 000A in this embodiment refers to the number of light-emitting elements 20 arranged along the first direction X in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the first direction X in the entire light-emitting panel 000. The number of light-emitting elements 20 in a light-emitting element column 20L in a repeating unit 000A refers to the number of light-emitting elements 20 arranged along the second direction Y in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the second direction Y in the entire light-emitting panel 000.

[0158] This embodiment explains how Figure 28In the repeating unit 000A shown, in at least one repeating unit 000A, the number of driving transistors 10 corresponding to one light-emitting element row 20H and / or one light-emitting element column 20L is less than or equal to 2, that is, the number of driving transistors 10 corresponding to one light-emitting element row 20H is less than or equal to 2 (not shown in the figure), or the number of driving transistors 10 corresponding to one light-emitting element column 20L is less than or equal to 2 (as shown in the figure). Figure 28 and Figure 29 As shown), or the number of driving transistors 10 corresponding to a light emitting element row 20H and the number of driving transistors 10 corresponding to a light emitting element column 20L are both less than or equal to 2 (as shown). Figure 30 and Figure 31 shown).

[0159] like Figure 28 and Figure 29 As shown, a repeating unit 000A includes 72 light emitting elements 20 and 9 driving transistors 10, and a light emitting panel 000 including multiple repeating units 000A is shown in FIG. Figure 29 As shown, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. At this time, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L is 2, 1, or 0, that is, the number of driving transistors 10 corresponding to a light-emitting element column 20L in a repeating unit 000A does not exceed 2, and the number of driving transistors 10 corresponding to a light-emitting element row 20H in a repeating unit 000A can be arranged according to the condition that the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, as shown in FIG. Figure 28 and Figure 29 As shown, at this time, the number of driving transistors 10 corresponding to a light-emitting element row 20H in a repeating unit 000A may be 3, 2, 1, or 0, which is not specifically limited in this embodiment.

[0160] like Figure 30 and Figure 31 As shown, a repeating unit 000A includes 32 light emitting elements 20 and 4 driving transistors 10, and a light emitting panel 000 including multiple repeating units 000A is shown in FIG. Figure 31As shown, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. At this time, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L is 2 or 0, and the number of driving transistors 10 corresponding to a light-emitting element row 20H is 2 or 0. That is, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L does not exceed 2, and the number of driving transistors 10 corresponding to a light-emitting element row 20H does not exceed 2. While satisfying the requirement that the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, the arrangement of the driving transistors 10 also has a certain regularity, which is beneficial to the uniformity of light absorption of the driving transistors 10 and helps to improve the luminous effect.

[0161] Optional, please continue to combine reference Figures 28-31 In this embodiment, if the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 8:1, and the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L in at least one repeating unit 000A is less than or equal to 2, then in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M2, and the number of light-emitting elements 20 included in the light-emitting element column 20L is N2, M2>N2, M2≥8, and N2<8.

[0162] This embodiment explains that in a repeating unit 000A, when the number M2 of the light emitting elements 20 included in the light emitting element row 20H is greater than the number N2 of the light emitting elements 20 included in the light emitting element column 20L, and M2 ≥ 8, N2 < 8, Figure 28 In the example, M2=12, N2=6; Figure 30 In the embodiment, M2=8, N2=4, the number of driving transistors 10 corresponding to at least one light-emitting element row 20H or one light-emitting element column 20L in a repeating unit 000A can be made to be at most 2. This satisfies the requirement that the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 8:1, and the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, which is beneficial to improving the lamp shadow problem.

[0163] It is understandable that the Figures 28-31 The two arrangement structures are shown for example only, in which the number M2 of the light-emitting elements 20 included in the light-emitting element row 20H is greater than the number N2 of the light-emitting elements 20 included in the light-emitting element column 20L in a repeating unit 000A, and M2 ≥ 8 and N2 < 8. Specific implementations include but are not limited to this structure.

[0164] In some optional embodiments, please refer to Figure 32and Figure 33 、 Figure 34 and Figure 35 、 Figure 36 and Figure 37 , Figure 32 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 33 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 34 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 35 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 36 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 37 This is another planar structural schematic diagram of the light-emitting panel provided in an embodiment of the present invention. In this embodiment, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1, and in at least one repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L is less than or equal to 1.

[0165] This embodiment explains how Figure 32 、 Figure 34 、 Figure 36 In the repeating unit 000A shown, in at least one repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L is less than or equal to 1, that is, the number of driving transistors 10 corresponding to a light-emitting element row 20H is less than or equal to 1, or the number of driving transistors 10 corresponding to a light-emitting element column 20L is less than or equal to 1, or the number of driving transistors 10 corresponding to a light-emitting element row 20H and the number of driving transistors 10 corresponding to a light-emitting element column 20L are both less than or equal to 1.

[0166] like Figure 32 and Figure 33 As shown, a repeating unit 000A includes 8 light emitting elements 20 and 1 driving transistor 10, forming a light emitting element array of 2 rows and 4 columns. The light emitting panel 000 including multiple repeating units 000A is as shown in FIG. Figure 33 As shown, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. At this time, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L is 1 or 0, and the number of driving transistors 10 corresponding to a light-emitting element row 20H is 1 or 0. That is, the number of driving transistors 10 corresponding to a light-emitting element column 20L in a repeating unit 000A does not exceed 1, and the number of driving transistors 10 corresponding to a light-emitting element row 20H in a repeating unit 000A does not exceed 1.

[0167] like Figure 34 and Figure 35 As shown, a repeating unit 000A includes 16 light emitting elements 20 and 2 driving transistors 10, forming a light emitting element array of 4 rows and 4 columns. The light emitting panel 000 including multiple repeating units 000A is shown in FIG. Figure 35 As shown, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. At this time, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L is 1 or 0, and the number of driving transistors 10 corresponding to a light-emitting element row 20H is 1 or 0. That is, the number of driving transistors 10 corresponding to a light-emitting element column 20L in a repeating unit 000A does not exceed 1, and the number of driving transistors 10 corresponding to a light-emitting element row 20H in a repeating unit 000A does not exceed 1.

[0168] like Figure 36 and Figure 37 As shown, a repeating unit 000A includes 16 light emitting elements 20 and 2 driving transistors 10 (the positions of the two driving transistors 10 are the same as those of the embodiment shown in FIG. Figure 34 Different), forming a 4-row 4-column light emitting element array, the light emitting panel 000 including multiple repeating units 000A is as follows Figure 37 As shown, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. At this time, in a repeating unit 000A, the number of driving transistors 10 corresponding to a light-emitting element column 20L is 1 or 0, and the number of driving transistors 10 corresponding to a light-emitting element row 20H is 1 or 0. That is, the number of driving transistors 10 corresponding to a light-emitting element column 20L in a repeating unit 000A does not exceed 1, and the number of driving transistors 10 corresponding to a light-emitting element row 20H in a repeating unit 000A does not exceed 1.

[0169] In this embodiment, a repeating unit 000A satisfies the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 of 8:1. The number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L is less than or equal to 1. In addition, when the repeating unit 000A of this arrangement is applied to the light-emitting panel 000, the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, and the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2. Figure 33 、 Figure 35 、 Figure 37 As for the overall layout of the light-emitting panel 000, the arrangement of the driving transistors 10 has a certain regularity, which is beneficial to the uniformity of light absorption of the driving transistors 10, making the brightness uniformity within the surface better, and helping to improve the light-emitting effect.

[0170] Optional, please continue to combine reference Figure 32-Figure 37 In this embodiment, if the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 8:1, and the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L in at least one repeating unit 000A is less than or equal to 1, then in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M1, and the number of light-emitting elements 20 included in the light-emitting element column 20L is N1, M1 ≥ 4, N1 ≥ 2.

[0171] This embodiment explains that in a repeating unit 000A, when the number M1 of the light emitting elements 20 included in the light emitting element row 20H is greater than or equal to 4, and the number N1 of the light emitting elements 20 included in the light emitting element column 20L is greater than or equal to 2, Figure 32 In the example, M1=4, N1=2; Figure 34 In the example, M1=4, N1=4, Figure 36 In the embodiment, M1=4 and N1=4, the maximum number of driving transistors 10 corresponding to at least one light-emitting element row 20H or one light-emitting element column 20L in a repeating unit 000A is 1. This satisfies the requirement that the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 8:1. In addition, the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2, which is beneficial for making the light absorption of the driving transistor 10 more uniform and further improving the lamp shadow problem.

[0172] It is understandable that the Figure 32-Figure 37 The following are just two examples of arrangement structures in which the number M1 of the light-emitting elements 20 included in the light-emitting element row 20H in a repeating unit 000A is greater than or equal to 4, and the number N1 of the light-emitting elements 20 included in the light-emitting element column 20L is greater than or equal to 2. Specific implementations include but are not limited to these structures.

[0173] In some optional embodiments, please refer to Figures 38-40 and Figure 41-43 , Figure 38 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 39 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 40 yes Figure 39 Schematic diagram of the electrical connection structure of the light-emitting element and the driving transistor in a local area on the light-emitting panel, Figure 41 is a schematic diagram of the arrangement structure of another repeating unit provided in an embodiment of the present invention, Figure 42 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 43 yes Figure 42 Schematic diagram of the electrical connection structure of the light-emitting elements and the driving transistors in a local area on the light-emitting panel. In this embodiment, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. In a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M1, and the number of light-emitting elements 20 included in the light-emitting element column 20L is N1, where M1=N1=8; then the number of driving transistors 10 corresponding to a light-emitting element row 20H and / or a light-emitting element column 20L is equal to 1.

[0174] This embodiment explains that in at least one repeating unit 000A, the number of driving transistors 10 corresponding to one light-emitting element row 20H and / or one light-emitting element column 20L is equal to 1, that is, the number of driving transistors 10 corresponding to one light-emitting element row 20H is equal to 1 (not shown in the figure), or the number of driving transistors 10 corresponding to one light-emitting element column 20L is equal to 1 (not shown in the figure), or the number of driving transistors 10 corresponding to one light-emitting element row 20H and the number of driving transistors 10 corresponding to one light-emitting element column 20L are both equal to 1 (such as Figure 38 and Figure 41 As shown), in this case, in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 8:1. In a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M1, and the number of light-emitting elements 20 included in the light-emitting element column 20L is N1. M1=N1=8, that is, a repeating unit 000A includes 64 light-emitting elements 20 and 8 driving transistors 10, forming a light-emitting element array of 8 rows and 8 columns. The light-emitting panel 000 including multiple repeating units 000A is as shown in FIG. Figure 39 and Figure 42As shown, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 8:1, and in one repeating unit 000A, the number of driving transistors 10 corresponding to one light emitting element column 20L is 1, and the number of driving transistors 10 corresponding to one light emitting element row 20H is 1, that is, the number of driving transistors 10 corresponding to one light emitting element column 20L and the number of driving transistors 10 corresponding to one light emitting element row 20H in one repeating unit 000A are both one, so that the 8 driving transistors are evenly arranged in the 8-row and 8-column light emitting element array. Since one driving transistor 10 corresponds to one light emitting element column 20L and one light emitting element row 20H in one repeating unit 000A, the number of light-absorbing driving transistors 10 in each light emitting element row 20H and each light emitting element column 20L in one repeating unit 000A can be made consistent, so that the in-plane brightness uniformity is better, which is conducive to further improving the distribution uniformity of the driving transistors 10, so that the light-absorbing effect of the driving transistors 10 in the light emitting panel 000 formed by using the repeating unit 000A is more uniform, so as to further improve the overall light emitting uniformity of the light emitting panel. As shown in Figure 40 and Figure 43 In the present embodiment, the number of driving transistors 10 corresponding to one light emitting element row 20H and one light emitting element column 20L in one repeating unit 000A is equal to 1, so that there is only one driving transistor 10 corresponding to one light emitting element column 20L, that is, only one driving signal line K needs to be led out for one light emitting element column 20L in one repeating unit 000A, which is also conducive to reducing the number of driving signal lines K between adjacent two light emitting element columns 20L in one repeating unit 000A, and further conducive to the arrangement of signal lines on the panel, avoiding the short circuit caused by too many signal lines between adjacent two light emitting element columns 20L, and further improving the product yield.

[0175] It can be understood that the repeating unit 000A in the present embodiment is Figure 38 and Figure 41 The repeating unit 000A in the present embodiment is illustrated by taking the connection line of the plurality of light emitting elements 20 corresponding to one driving transistor 10 not in the same light emitting element row 20H or the same light emitting element column 20L as an example, and as shown in Figure 44 and Figure 45 , Figure 44 is another arrangement structure schematic diagram of a repeating unit provided by the embodiment of the present application, Figure 45Schematic diagram of another arrangement structure of repeating units provided in an embodiment of the present invention. A corresponding driving transistor 10 can also be on the connection line of multiple light-emitting elements 20 in the same light-emitting element row 20H or the same light-emitting element column 20L, that is, a driving transistor 10 can be located between two adjacent light-emitting elements 20 in the same light-emitting element row 20H or the same light-emitting element column 20L. For details, please refer to Figure 10 、 Figure 13 、 Figure 14 The present embodiment will not be described in detail here for understanding.

[0176] It should be noted that this embodiment only illustrates two arrangements that satisfy the following conditions: in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M1, the number of light-emitting elements 20 included in the light-emitting element column 20L is N1, M1=N1=8, and the number of driving transistors 10 corresponding to one light-emitting element row 20H and one light-emitting element column 20L is both equal to 1. Specific implementations include but are not limited to the above-mentioned arrangement structures.

[0177] In some optional embodiments, please continue to refer to Figure 23 and Figure 27 In a repeating unit 000A provided in this embodiment, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 4:1.

[0178] This embodiment explains that in a repeating unit 000A of the light emitting panel 000, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 4:1. Then, in the entire light emitting panel 000 including multiple repeating units 000A, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 can be 4:1. Figure 25 As shown, the repeating unit 000A includes 4 light emitting elements 20 and 1 driving transistor 10, forming a light emitting element array of 2 rows and 2 columns. The light emitting panel 000 including multiple repeating units 000A can be as follows: Figure 23 As shown; Figure 26 As shown, the repeating unit 000A includes 8 light emitting elements 20 and 2 driving transistors 10, forming a light emitting element array of 4 rows and 2 columns. The light emitting panel 000 including multiple repeating units 000A can be as follows: Figure 27 As shown; it is beneficial to further reduce the number of driving transistors 10 in the entire light-emitting panel 000, so that there can be more panel space for layout of driving transistors 10, and more effectively improve the lamp shadow problem.

[0179] It is understood that the specific arrangement of the light emitting element 20 and the driving transistor 10 in the repeating unit 000A of this embodiment includes but is not limited to Figure 24 、 Figure 25 、 Figure 26 Schematic structure, Figure 28 This is only one of the possible arrangements. In practice, the repeating unit 000A can also be arranged in other ways, as long as the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in one repeating unit 000A is 4:1.

[0180] It should be noted that Figure 24 and Figure 25 In the example, the number of light emitting elements 20 included in one repeating unit 000A is 4, and the number of driving transistors is 1. Figure 26 In the figure, it is only taken that the number of light-emitting elements 20 included in a repeating unit 000A is 8, the number of driving transistors is 2, and the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 4:1. In a specific implementation, the number of light-emitting elements 20 and the number of driving transistors included in a repeating unit 000A are not limited to this, and can also be other numbers, such as the number of light-emitting elements 20 included in a repeating unit 000A is 64, and the number of driving transistors is 16; or the number of light-emitting elements 20 included in a repeating unit 000A is 16, and the number of driving transistors is 4, etc. This embodiment does not make specific limitations, and it only needs to satisfy that the light-emitting panel includes multiple repeating units 000A and the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 4:1.

[0181] In some optional embodiments, please refer to Figure 46-47 , Figure 46 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 47 1 is another planar structural diagram of a light-emitting panel provided in an embodiment of the present invention. In this embodiment, the light-emitting panel 000 includes a fifth partition AA1e and a sixth partition AA1f. The fifth partition AA1e includes at least one light-emitting element row 20H, and the sixth partition AA1f includes at least one light-emitting element row 20H. Optionally, the fifth partition AA1e may further include multiple driving transistors 10, and the sixth partition AA1f may further include multiple driving transistors 10. Figure 46 and Figure 47 As shown in , when one light emitting element row 20H is regarded as one fifth subarea AA1e or one sixth subarea AA1f, the fifth subarea AA1e or the sixth subarea AA1f includes the driving transistor 10;

[0182] The fifth subarea AA1e and the sixth subarea AA1f are sequentially arranged along the second direction Y;

[0183] In the fifth subarea AA1e, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L;

[0184] In the sixth subarea AA1f, the driving transistor 10 is located in the even-numbered light emitting element columns 20L.

[0185] It can be understood that in the fifth subarea AA1e of this embodiment, the driving transistor 10 is located in the odd-numbered light emitting element column 20L, which means: Figure 46 As shown, when a driving transistor 10 is located between two adjacent light-emitting elements 20 and the driving transistor 10 is on the connection line of multiple light-emitting elements 20 in the same light-emitting element column 20L, in the fifth subarea AA1e, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L. This can be understood as the driving transistor 10 is located within the range of the odd-numbered light-emitting element column 20L itself in the fifth subarea AA1e. Or as Figure 47 As shown, when a driving transistor 10 can be located between two adjacent light-emitting elements 20 and the driving transistor 10 is not on the connection line of multiple light-emitting elements 20 in the same light-emitting element column 20L, the range where a light-emitting element column 20L itself is located and the area between it and another light-emitting element column 20L can be understood as the range of a light-emitting element column 20L in this embodiment, that is, in the fifth partition AA1e, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L, which can be understood as that in the fifth partition AA1e, the driving transistor 10 is located in the common range between the odd-numbered light-emitting element column 20L itself and the odd-numbered light-emitting element column 20L to another adjacent light-emitting element column 20L.

[0186] It should be noted that, in order to ensure that the number of driver transistors 10 adjacent to a light-emitting element 20 in a direction parallel to the plane of the substrate 00 is less than two, if one light-emitting element row 20H forms the fifth subarea AA1e and one light-emitting element row 20H forms the sixth subarea AA1f, then at least one other light-emitting element row 20H may be included between the fifth subarea AA1e formed by one light-emitting element row 20H and the sixth subarea AA1f formed by one light-emitting element row 20H. Optionally, in the diagram of this embodiment, two light-emitting element rows 20H form the fifth subarea AA1e, and two light-emitting element rows 20H form the sixth subarea AA1f, and each of the fifth subarea AA1e and the sixth subarea AA1f includes multiple driver transistors.

[0187] This embodiment explains that in a repeating unit 000A of the light emitting panel 000, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 4:1, then the total number of light emitting elements 20 and driving transistors 10 in the light emitting panel can be Figure 46-47The arrangement structure shown is specifically as follows: the light emitting panel 000 includes a fifth partition AA1e and a sixth partition AA1f, the fifth partition AA1e includes at least one light emitting element row 20H, and the sixth partition AA1f includes at least one light emitting element row 20H; optionally, Figure 46 and Figure 47 In the description, the fifth partition AA1e includes two light-emitting element rows 20H, and the sixth partition AA1f includes two light-emitting element rows 20H. The fifth partition AA1e and the sixth partition AA1f are arranged in sequence along the second direction Y. Optionally, the first and second light-emitting element rows 20H of the light-emitting panel 000 may be the fifth partition AA1e, or the first and second light-emitting element rows 20H of the light-emitting panel 000 may also be the sixth partition AA1f. This embodiment is not specifically limited. It is only required that the fifth partition AA1e and the sixth partition AA1f are arranged in sequence along the second direction Y. At this time, the driving crystal The setting position of the tube 10 can be that in the fifth partition AA1e, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L, and in the sixth partition AA1f, the driving transistor 10 is located in the even-numbered light-emitting element column 20L, that is, in two different partitions arranged along the second direction Y, the driving transistor 10 is located in different light-emitting element columns 20L, so that the driving transistors 10 are staggered in the first direction X, and thus the driving transistors 10 are distributed as evenly as possible in the entire light-emitting panel 000. Even if the light path of the light-emitting element 20 is blocked and light is absorbed, the light absorption and shading can be as uniform as possible, which is conducive to improving the uniformity of light emission.

[0188] Optional, such as Figures 48-51 , Figure 48 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 49 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 50 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 51 is another schematic diagram of the planar structure of the light emitting panel provided by an embodiment of the present invention. In this embodiment, Figure 48 and Figure 49 As shown, the fifth subarea AA1e may include four light emitting element rows 20H, and the sixth subarea AA1f may include four light emitting element rows 20H; or Figure 50 and Figure 51 As shown, the fifth subarea AA1e may include six light emitting element rows 20H, and the sixth subarea AA1f may include six light emitting element rows 20H; or the fifth subarea AA1e and the sixth subarea AA1f may also include more light emitting element rows 20H, which will not be described in detail in this embodiment. It is understood that in this embodiment Figures 46-51The example is taken as follows: the number of light-emitting element rows 20H included in the fifth partition AA1e and the sixth partition AA1f is the same. In specific implementation, the number of light-emitting element rows 20H included in the fifth partition AA1e and the sixth partition AA1f can also be different. It only needs to meet the requirement that the number of driving transistors 10 adjacent to one light-emitting element 20 in the direction parallel to the plane of the base substrate 00 is less than 2, which can improve the lamp shadow problem.

[0189] In some optional embodiments, please continue to refer to Figure 46 and Figure 52 , Figure 52 yes Figure 46 Schematic diagram of the structure of a repeating unit in , in this embodiment, in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M3, the number of light-emitting elements 20 included in the light-emitting element column 20L is N3, M3=2, N3=4;

[0190] The number of the driving transistors 10 corresponding to the odd-numbered light-emitting element rows 20H is equal to 1, and the number of the driving transistors 10 corresponding to the even-numbered light-emitting element rows 20H is equal to 0;

[0191] The number of driving crystals 10 corresponding to one light emitting element column 20L is equal to 1.

[0192] It should be understood that the number of light-emitting elements 20 in a light-emitting element row 20H in a repeating unit 000A in this embodiment refers to the number of light-emitting elements 20 arranged along the first direction X in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the first direction X in the entire light-emitting panel 000. The number of light-emitting elements 20 in a light-emitting element column 20L in a repeating unit 000A refers to the number of light-emitting elements 20 arranged along the second direction Y in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the second direction Y in the entire light-emitting panel 000.

[0193] This embodiment explains that when the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 4:1, a repeating unit 000A can be set to include 8 light-emitting elements 20 and 2 driving transistors 10 to form a light-emitting element array with 4 rows and 2 columns. That is, in a repeating unit 000A, the number M3 of the light-emitting elements 20 included in the light-emitting element row 20H is 2, the number N3 of the light-emitting elements 20 included in the light-emitting element column 20L is 4, and the number of driving transistors 10 is 2. In order to meet the requirement of parallel to the substrate 0 0, the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2. In the repeating unit 000A, it can be set that only the odd-numbered light-emitting element rows 20H have corresponding driving transistors 10 and the number is equal to 1, and the even-numbered light-emitting element rows 20H do not have corresponding driving transistors 10, that is, the number is equal to 0, and the two light-emitting element columns 20L respectively correspond to one driving transistor 10, so that in a repeating unit 000A, the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 is 4:1, and according to the Figure 52 The light emitting panel 000 (such as Figure 46 As shown in FIG2 , the number of driving transistors 10 adjacent to a light-emitting element 20 can be less than 2, which is beneficial for making the light absorption of the driving transistor 10 more uniform and further improving the lamp shadow problem.

[0194] In some optional embodiments, please refer to Figures 53-56 , Figure 53 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 54 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 54 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 56 1 is another planar structural diagram of a light-emitting panel provided in an embodiment of the present invention. In this embodiment, the light-emitting panel 000 includes a seventh partition AA1g and an eighth partition AA1h. The seventh partition AA1g includes at least one light-emitting element row 20H, and the eighth partition AA1h includes at least one light-emitting element row 20H. Optionally, the seventh partition AA1g may further include multiple driving transistors 10, and the eighth partition AA1h may further include multiple driving transistors 10, such as Figure 53 and Figure 54 As shown in , when one light emitting element row 20H is regarded as one seventh subarea AA1g or one eighth subarea AA1h, the seventh subarea AA1g or the eighth subarea AA1h includes the driving transistor 10;

[0195] The seventh subarea AA1g and the eighth subarea AA1h are sequentially arranged along the second direction Y;

[0196] In the seventh and eighth subareas AA1g and AA1h, the driving transistors 10 are all located in the odd-numbered light-emitting element columns 20L, and the even-numbered light-emitting element columns 20L do not include the driving transistors 10. Alternatively, in the seventh and eighth subareas AA1g and AA1h, the driving transistors 10 are all located in the even-numbered light-emitting element columns 20L, and the odd-numbered light-emitting element columns 20 do not include the driving transistors 10. That is, in the seventh and eighth subareas AA1g and AA1h, driving transistors are not provided in the corresponding two adjacent light-emitting element columns 20L in the seventh and eighth subareas AA1g and AA1h.

[0197] It can be understood that in the seventh subarea AA1g and the eighth subarea AA1h of this embodiment, the driving transistors 10 are all located in the odd-numbered light emitting element columns 20L, which means: Figure 53 As shown, when a driving transistor 10 is located between two adjacent light-emitting elements 20 and the driving transistor 10 is on the connection line of multiple light-emitting elements 20 in the same light-emitting element column 20L, in the seventh subarea AA1g and the eighth subarea AA1h, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L, which can be understood as the driving transistor 10 is located in the range of the odd-numbered light-emitting element column 20L itself in the fifth subarea AA1e. Or as Figure 53 As shown, when a driving transistor 10 can be located between two adjacent light-emitting elements 20 and the driving transistor 10 is not on the connection line of multiple light-emitting elements 20 in the same light-emitting element column 20L, the range where one light-emitting element column 20L itself is located and the area between it and another light-emitting element column 20L can be understood as the range of one light-emitting element column 20L in this embodiment, that is, in the seventh partition AA1g and the eighth partition AA1h, the driving transistor 10 is located in the odd-numbered light-emitting element column 20L, which can be understood as that in the seventh partition AA1g and the eighth partition AA1h, the driving transistor 10 is located in the common range between the odd-numbered light-emitting element column 20L itself and the area between the odd-numbered light-emitting element column 20L and another adjacent light-emitting element column 20L.

[0198] Optional, such as Figure 54 and Figure 56 As shown, two light emitting element rows 20H of this embodiment can also form a seventh subarea AA1g, and two light emitting element rows 20H can also form an eighth subarea AA1h. Each of the seventh subarea AA1g and the eighth subarea AA1h includes a plurality of driving transistors 10.

[0199] This embodiment explains that in a repeating unit 000A of the light emitting panel 000, the ratio of the number of light emitting elements 20 to the number of driving transistors 10 is 4:1, then the total number of light emitting elements 20 and driving transistors 10 in the light emitting panel can be Figures 53-56 The arrangement structure shown is specifically as follows: the light emitting panel 000 includes a seventh partition AA1g and an eighth partition AA1h, the seventh partition AA1g includes at least one light emitting element row 20H, and the eighth partition AA1h includes at least one light emitting element row 20H; optionally, Figure 53 and Figure 54 In the description, the seventh partition AA1g includes a light-emitting element row 20H, and the eighth partition AA1h includes a light-emitting element row 20H. The seventh partition AA1g and the eighth partition AA1h are arranged in sequence along the second direction Y. Optionally, the first light-emitting element row 20H of the light-emitting panel 000 may be the seventh partition AA1g, or the first light-emitting element row 20H of the light-emitting panel 000 may also be the eighth partition AA1h. This embodiment is not specifically limited, and it is only required that the seventh partition AA1g and the eighth partition AA1h are arranged in sequence along the second direction Y. At this time, the setting position of the driving transistor 10 can be in the seventh partition AA1g and the eighth partition AA1h, and the driving transistor 10 is located in the odd-numbered light-emitting element column 20L, and the even-numbered light-emitting element column 20L does not include the driving transistor 10 (such as Figures 53-56 Alternatively, in the seventh partition AA1g and the eighth partition AA1h, the driving transistor 10 is located in the even-numbered light-emitting element columns 20L, and the odd-numbered light-emitting element columns 20 do not include the driving transistor 10 (as shown in FIG. 2 ); Figure 57 and Figure 58 As shown, Figure 57 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 58 , which is another planar structural diagram of the light-emitting panel provided by an embodiment of the present invention, that is, in the seventh partition AA1g and the eighth partition AA1h, and in the two adjacent light-emitting element columns 20L in the seventh partition AA1g and the eighth partition AA1h, the driving transistors 10 are not simultaneously provided. Therefore, the driving transistors 10 are arranged sequentially in the first direction X, and the number of driving transistors 10 along the second direction Y is as equal as possible. As a result, the driving transistors 10 are distributed as evenly as possible in the entire light-emitting panel 000. Even if the light path of the light-emitting element 20 is blocked or absorbed, the light absorption and shading can be as uniform as possible, which is conducive to improving the uniformity of light emission.

[0200] It is understandable that the Figures 53-56 The example is taken as follows: the number of light-emitting element rows 20H included in the seventh partition AA1g and the eighth partition AA1h is the same. In specific implementation, the number of light-emitting element rows 20H included in the seventh partition AA1g and the eighth partition AA1h can also be different. It only needs to meet the requirement that the number of driving transistors 10 adjacent to one light-emitting element 20 in the direction parallel to the plane of the base substrate 00 is less than 2, so as to improve the lamp shadow problem.

[0201] In some optional embodiments, please continue to refer to Figure 24 、 Figure 25 、 Figure 54 、 Figure 56 In this embodiment, in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M4, and the number of light-emitting elements 20 included in the light-emitting element column 20L is N4, where M4=2 and N4=2.

[0202] The number of driving transistors 10 corresponding to one light emitting element row 20H is equal to 1, and the number of driving transistors 10 corresponding to another light emitting element row 20H is equal to 0;

[0203] The number of driving transistors 10 corresponding to one light emitting element column 20L is equal to 1, and the number of driving transistors 10 corresponding to the other light emitting element column 20L is equal to 0.

[0204] It should be understood that the number of light-emitting elements 20 in a light-emitting element row 20H in a repeating unit 000A in this embodiment refers to the number of light-emitting elements 20 arranged along the first direction X in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the first direction X in the entire light-emitting panel 000. The number of light-emitting elements 20 in a light-emitting element column 20L in a repeating unit 000A refers to the number of light-emitting elements 20 arranged along the second direction Y in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the second direction Y in the entire light-emitting panel 000.

[0205] This embodiment explains that when the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 4:1, a repeating unit 000A can be set to include 4 light-emitting elements 20 and 1 driving transistor 10 to form a light-emitting element array with 2 rows and 2 columns. That is, in a repeating unit 000A, the number M4 of light-emitting elements 20 included in the light-emitting element row 20H is 2, the number N4 of light-emitting elements 20 included in the light-emitting element column 20L is 2, and the number of driving transistors 10 is 1. In order to meet the requirement of parallel to the plane of the substrate 00, the number of light-emitting elements 20 and the number of driving transistors 10 are 1. 0 adjacent driving transistors 10 is less than 2, it can be set in the repeating unit 000A, in the 2 rows and 2 columns of the light emitting element array, only one light emitting element row 20H is correspondingly provided with a driving transistor 10, and the number of driving transistors 10 corresponding to the other light emitting element row 20H is equal to 0, and only one light emitting element column 20L is correspondingly provided with a driving transistor 10, and the number of driving transistors 10 corresponding to the other light emitting element column 20L is equal to 0, satisfying the ratio of the number of light emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A of 4:1, and also making according to the Figure 24 and Figure 25 The light emitting panel 000 (such as Figure 54 and Figure 56 As shown in FIG2 , the number of driving transistors 10 adjacent to a light-emitting element 20 can be less than 2, which is beneficial for making the light absorption of the driving transistor 10 more uniform and further improving the lamp shadow problem.

[0206] In some optional embodiments, please refer to Figure 53 、 Figure 54 and Figure 59 、 Figure 60 , Figure 59 yes Figure 53 A schematic diagram of the structure of a repeating unit in Figure 60 yes Figure 54 Schematic diagram of the structure of a repeating unit in , in this embodiment, in a repeating unit 000A, the number of light-emitting elements 20 included in the light-emitting element row 20H is M5, the number of light-emitting elements 20 included in the light-emitting element column 20L is N5, M5=4, N5=2;

[0207] The number of the driving transistors 10 corresponding to the odd-numbered light-emitting element columns 20L is equal to 1, and the number of the driving transistors 10 corresponding to the even-numbered light-emitting element columns 20L is equal to 0;

[0208] The number of driving transistors 10 corresponding to one light emitting element row 20H is equal to one.

[0209] It should be understood that the number of light-emitting elements 20 in a light-emitting element row 20H in a repeating unit 000A in this embodiment refers to the number of light-emitting elements 20 arranged along the first direction X in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the first direction X in the entire light-emitting panel 000. The number of light-emitting elements 20 in a light-emitting element column 20L in a repeating unit 000A refers to the number of light-emitting elements 20 arranged along the second direction Y in the repeating unit 000A, and does not represent the number of light-emitting elements 20 arranged along the second direction Y in the entire light-emitting panel 000.

[0210] This embodiment explains that when the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A is 4:1, the repeating unit 000A can be set to include 8 light-emitting elements 20 and 8 driving transistors 10 to form a light-emitting element array with 2 rows and 4 columns. That is, in a repeating unit 000A, the number M5 of light-emitting elements 20 included in the light-emitting element row 20H is 4, and the number N4 of light-emitting elements 20 included in the light-emitting element column 20L is 2. At this time, the number of driving transistors 10 is 2. In order to meet the requirement that the number of driving transistors 10 adjacent to a light-emitting element 20 in a direction parallel to the plane where the substrate 00 is located is less than 2, it can be set that in the light-emitting element array with 2 rows and 4 columns in the repeating unit 000A, only the odd-numbered light-emitting element columns 20L are correspondingly provided with a driving transistor 10, and the number of driving transistors 10 in the even-numbered light-emitting element columns 20L is equal to 0 (e.g. Figure 59 and Figure 60 As shown), or only the even-numbered light-emitting element columns 20L are provided with a corresponding driving transistor 10, and the number of driving transistors 10 corresponding to the odd-numbered light-emitting element columns 20L is equal to 0 (not shown in the figure), and each light-emitting element row 20H in the repeating unit 000A is provided with a corresponding driving transistor 10, which satisfies the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in a repeating unit 000A of 4:1, and also makes the ratio of the number of light-emitting elements 20 to the number of driving transistors 10 in the repeating unit 000A be 4:1. Figure 59 and Figure 60 The light emitting panel 000 (such as Figure 53 and Figure 54 As shown in FIG2 , the number of driving transistors 10 adjacent to a light-emitting element 20 can be less than 2, which is beneficial for making the light absorption of the driving transistor 10 more uniform and further improving the lamp shadow problem.

[0211] In some optional embodiments, please continue to refer to Figure 38 、 Figure 39 、 Figure 41 、 Figure 42In this embodiment, the light-emitting panel 000 includes a plurality of repeating units 000A arranged along a first direction X to form repeating unit rows 000AH, and a plurality of repeating units 000A arranged along a second direction Y to form repeating unit columns 000AL. That is, the arrangement of the driving transistors 10 in each repeating unit 000A in the light-emitting panel 000 can be the same, to achieve a more uniform display.

[0212] In some optional embodiments, please refer to Figure 38 、 Figure 39 and Figure 61 , Figure 61 is another planar structural diagram of the light emitting panel provided by an embodiment of the present invention (it can be understood that Figure 61 The arrangement of the repeating units shown can be understood as Figures 21-27 In the embodiment described in the embodiment, the arrangement of the driving transistors 10 of at least two repeating units 000A of the plurality of repeating units 000A included in the light emitting panel 000 may be different, such as Figure 61 As shown, a repeating unit row 000AH, at least two repeating units 000A are Figure 38 and Figure 41 The structure of the repeating unit 000A shown in FIG. 1 (repeating unit 000A1 and repeating unit 000A2); or in a repeating unit column 000AL, at least two repeating units 000A are Figure 38 and Figure 41 Schematic structure of repeating unit 000A (repeating unit 000A1 and repeating unit 000A2); or a repeating unit row 000AH, at least two repeating units 000A are Figure 38 and Figure 41 The structure of the repeating unit 000A is shown in FIG. 1 , and in a repeating unit column 000AL, at least two repeating units 000A are Figure 38 and Figure 41 The structure of the schematic repeating unit 000A (repeating unit 000A1 and repeating unit 000A2), that is, although the light-emitting panel 000 is formed by different arrangements of repeating units 000A, the arrangement of the driving transistors 10 in multiple repeating units 000A can be different, which is beneficial to further disperse the driving transistors 10 to achieve the effect of improving the lamp shadow.

[0213] In some optional embodiments, please continue to refer to Figure 3In this embodiment, the distance D between adjacent driving transistors 10 and light-emitting elements 20 in a direction parallel to the plane of the base substrate 00 is greater than or equal to 1 mm. It is understood that the distance between adjacent driving transistors 10 and light-emitting elements 20 in a direction parallel to the plane of the base substrate 00 can be understood as the distance between the edge of the orthographic projection of the adjacent driving transistor 10 onto the base substrate 00 and the edge of the orthographic projection of the light-emitting element 20 closest to the adjacent driving transistor 10 onto the base substrate 00.

[0214] This embodiment explains that the number of driving transistors 10 adjacent to a light-emitting element 20 is less than 2 and is arranged in a direction parallel to the plane of the substrate 00, so as to improve the relative position of the driving transistor 10 and the light-emitting element 20, avoid the clustered arrangement of the driving transistors 10 in a local area, and avoid the blocking of light by multiple driving transistors 10 around a light-emitting element 20. At the same time, it can also be arranged in a direction parallel to the plane of the substrate 00. If there is a driving transistor 10 around the light-emitting element 20, the distance D between the adjacent driving transistor 10 and the light-emitting element 20 is greater than or equal to 1 mm, so that the distance between the driving transistor 10 and the light-emitting element 20 is as far as possible, which is conducive to better reducing the influence of the driving transistor 10 on the light path of the light-emitting element 20, thereby improving the lamp shadow phenomenon caused by the local low brightness of the light-emitting panel 000 and improving the light-emitting quality of the light-emitting panel.

[0215] Optionally, in some other embodiments, the distance D between adjacent driving transistors 10 and light-emitting elements 20 in a direction parallel to the plane of the substrate 00 may be less than 1 mm. It is understandable that the distance between adjacent driving transistors 10 and light-emitting elements 20 in a direction parallel to the plane of the substrate 00 may be understood as the distance between the edge of the orthographic projection of the adjacent driving transistor 10 onto the substrate 00 and the edge of the orthographic projection of the light-emitting element 20 closest to it onto the substrate 00. Due to the different manufacturing sizes of the light-emitting element 20 and the driving transistor 10 themselves, the distance D between adjacent driving transistors 10 and light-emitting elements 20 may be further reduced to less than 1 mm, as long as it can improve the light shadow phenomenon caused by the low local brightness of the light-emitting panel 000 and improve the light-emitting quality of the light-emitting panel.

[0216] In some optional embodiments, please continue to refer to Figure 3In this embodiment, in a direction parallel to the plane of the substrate 00, the spacing between two adjacent driving transistors 10 is D1, and the spacing between two adjacent light-emitting elements 20 is D2, where D1 ≥ 2D2. It can be understood that when the orthographic projections of the driving transistors 10 and the light-emitting elements 20 onto the substrate 00 are regular shapes, then in a direction parallel to the plane of the substrate 00, the spacing between two adjacent driving transistors 10 can be understood as the distance between the geometric centers of the orthographic projections of the two adjacent driving transistors 10 onto the substrate 00, and the spacing between two adjacent light-emitting elements 20 can be understood as the distance between the geometric centers of the orthographic projections of the two adjacent light-emitting elements 20 onto the substrate 00.

[0217] This embodiment explains that the number of driving transistors 10 adjacent to a light-emitting element 20 in a direction parallel to the plane of the base substrate 00 is less than 2, so as to improve the relative position of the driving transistor 10 and the light-emitting element 20, avoid the driving transistor 10 from being arranged in a clustered manner in a local area, and avoid the light being blocked by multiple driving transistors 10 around a light-emitting element 20. At the same time, it can also be arranged in a direction parallel to the plane of the base substrate 00, with a spacing D1 between two adjacent driving transistors 10 and a spacing D2 between two adjacent light-emitting elements 20, D1 ≥ 2D2, thereby making the spacing between two adjacent driving transistors 10 as large as possible to avoid the driving transistor 10 from being arranged in a clustered manner in a local area, resulting in a large number of driving transistors 10 around the light-emitting elements 20 in a certain area, and severe light absorption in this area when the panel is lit, which is beneficial to improving the light uniformity of the light-emitting panel and improving the light quality.

[0218] In some optional embodiments, please refer to Figure 62 and Figure 63 , Figure 62 is another schematic diagram of the planar structure of the light-emitting panel provided by an embodiment of the present invention, Figure 63 yes Figure 62 AA' cross-sectional structural diagram (it can be understood that, in order to clearly illustrate the structure of this embodiment, Figure 62 In the light-emitting panel 000 provided in this embodiment, the base substrate 00 further includes a shielding glue 30, and in a direction Z perpendicular to the plane of the base substrate 00, the shielding glue 30 overlaps with the driving transistor 10.

[0219] The embodiment explains that the shielding glue 30 can be further arranged on the substrate 00, the shielding glue 30 can be located on the side of the driving transistor 10 away from the substrate 00, the shielding glue 30 overlaps the driving transistor 10 in the direction Z perpendicular to the plane where the substrate 00 is located, the shielding glue 30 can be a white glue with a reflecting function, the shielding glue 30 can protect the surface of the driving transistor 10, reduce the light crosstalk between the adjacent light emitting elements 20, reflect the light on the light transmission path of the light emitting element 20 back, avoid the driving transistor 10 on the light path of the light emitting element 20 shielding or absorbing the light, and further avoid the phenomenon that the driving transistor 10 in the local area absorbs the light seriously when the panel is lighted, thereby improving the light emitting uniformity of the light emitting panel.

[0220] Optionally, please refer to Figure 62 and Figure 64 , Figure 62 is another planar structure schematic diagram of the light emitting panel provided by the embodiment of the present application, Figure 64 is Figure 62 another cross-sectional structure schematic diagram of A-A' in the embodiment, the substrate 00 of the light emitting panel 000 provided by the embodiment further includes the shielding glue 30, the shielding glue 30 covers the driving transistor 10 in the direction Z perpendicular to the plane where the substrate 00 is located. That is, the shielding glue 30 in the embodiment can cover the driving transistor 10 entirely, the shielding glue 30 can be a white glue with a reflecting function, so that the protection effect of the surface and the side of the driving transistor 10 is better, the light crosstalk between the adjacent light emitting elements 20 is reduced, and the light on the light path of the light emitting element 20 is reflected back to the surface and the side of the driving transistor 10 through the common reflection effect of the upper surface and the side of the shielding glue 30, thereby further improving the light emitting uniformity of the light emitting panel.

[0221] It can be understood that one driving transistor 10 in the embodiment can correspond to a part of the shielding glue 30 structure, or when the driving transistors 10 are in rows or columns, as shown in Figure 62 , the shielding glue 30 can also form a grid-shaped structure, so that the shielding glue 30 forms an integral structure on the light emitting panel 000, thereby improving the process efficiency.

[0222] Optionally, please refer to Figure 65 , Figure 65 is another planar structure schematic diagram of the light emitting panel provided by the embodiment of the present application (it can be understood that, in order to clearly show the structure of the embodiment, Figure 65In the embodiment, shielding glue 30 can be set between two adjacent light-emitting element rows 20H and two adjacent light-emitting element columns 20L in the light-emitting panel 000, that is, the shielding glue 30 has a grid structure on the light-emitting panel 000. The shielding glue 30 can cover the driving transistor 10 at the position where the driving transistor 10 is located. At the same time, the shielding glue 30 can also be used as a reflective strip between two adjacent light-emitting elements 20 to better reduce light crosstalk between adjacent light-emitting elements 20, which is conducive to further improving the light quality.

[0223] In some alternative embodiments, please refer to Figure 66 , Figure 66 FIG1 is a schematic diagram of the structure of a display device provided in an embodiment of the present invention. The display device 111 provided in this embodiment includes the light-emitting panel 000 provided in the above-mentioned embodiment of the present invention. Optionally, the display device 111 can be the light-emitting panel 000 in the above-mentioned embodiment of the present invention, directly displaying. Alternatively, the display device 111 can be a liquid crystal display device, in which case the light-emitting panel 000 of this embodiment can be used as a direct-lit backlight. This embodiment does not specifically limit the type of display device 111; during implementation, it can be configured according to actual needs. Figure 66 This embodiment uses a mobile phone as an example to illustrate the display device 111. It is understood that the display device 111 provided in this embodiment of the present invention may be a computer, a television, an in-vehicle display device, or other display device 111 having a display function, and the present invention does not impose any specific limitations thereon. The display device 111 provided in this embodiment of the present invention has the beneficial effects of the light-emitting panel 000 provided in this embodiment of the present invention. For details, please refer to the detailed description of the light-emitting panel 000 in the above embodiments, and this embodiment will not be repeated here.

[0224] It can be seen from the above embodiments that the light-emitting panel and display device provided by the present invention achieve at least the following beneficial effects:

[0225] In the light-emitting panel of the present invention, the number of driving transistors adjacent to a light-emitting element in a direction parallel to the plane of the substrate is less than 2, and the driving transistors are dispersedly arranged on the substrate of the light-emitting panel. By improving the relative position of the driving transistors and the light-emitting elements, the driving transistors are avoided from being clustered in local areas. This can avoid the presence of multiple driving transistors around a light-emitting element to block light, and can also make the driving transistors absorb light more evenly on the substrate, reducing the influence of the driving transistors on the light path of the light-emitting element, and trying to avoid the phenomenon that there are a large number of driving transistors around the light-emitting elements in a certain area, and the area absorbs light severely when the panel is lit. This can improve the lamp shadow phenomenon caused by the local low brightness of the light-emitting panel, and is beneficial to improving the uniformity of the light-emitting panel and improving the light-emitting quality.

[0226] While certain specific embodiments of the application have been described in detail, those skilled in the art will understand that the examples are for illustrative purposes only and are not intended to limit the scope of the application. Those skilled in the art will understand that modifications can be made by persons of ordinary skill in the art without departing from the scope and spirit of the application. The scope of the application is defined by the appended claims.

Claims

1. A light-emitting panel, characterized in that: include: A base substrate and a plurality of driving transistors and a plurality of light-emitting elements located on the base substrate; One of the driving transistors is electrically connected to at least one of the light emitting elements; A plurality of light-emitting element arrays are arranged on the base substrate, wherein the plurality of light-emitting elements are arranged along a first direction to form light-emitting element rows, and the plurality of light-emitting elements are arranged along a second direction to form light-emitting element columns; wherein the first direction and the second direction intersect in a direction parallel to the plane of the base substrate; In a direction parallel to the plane where the substrate is located, the number of the driving transistors adjacent to one light-emitting element is A, and A<2; In a direction parallel to the plane where the base substrate is located, the distance between two adjacent driving transistors is D1, the distance between two adjacent light-emitting elements is D2, and D1>2D2.

2. The light emitting panel according to claim 1, wherein: In a direction parallel to the plane where the base substrate is located, the driving transistor is located between two adjacent light-emitting elements.

3. The light emitting panel according to claim 2, wherein: In a direction parallel to the plane where the base substrate is located, the driving transistor is located between two adjacent light-emitting elements in the light-emitting element row; or, The driving transistor is located between two adjacent light emitting elements in the light emitting element column.

4. The light-emitting panel according to claim 2, wherein: Along the third direction, the driving transistor is located between two adjacent light-emitting elements; wherein, in a direction parallel to the plane of the substrate, the angle between the third direction and the first direction is an acute angle, and the angle between the third direction and the second direction is an acute angle.

5. The light emitting panel according to claim 1, wherein: The light emitting panel includes at least one partition; In one of the subareas, the light-emitting elements are arranged along a fourth direction to form a first subarea, and the light-emitting elements are arranged along a fifth direction to form a second subarea; wherein the fourth direction is the same as the first direction, and the fifth direction is the same as the second direction; or, the fourth direction is the same as the second direction, and the fifth direction is the same as the first direction; In one of the partitions, the number of the light-emitting elements is greater than or equal to 3B, and the number of the driving transistors is 2; wherein 1≤B≤4.

6. The light emitting panel according to claim 5, characterized in that: The partitions include a first partition, and one of the first partitions includes three light-emitting elements and two driving transistors; Three of the light-emitting elements are arranged along the fourth direction to form one of the first sub-regions, and one of the light-emitting elements forms one of the second sub-regions along the fifth direction; Along the fifth direction, the two driving transistors are located in the same first sub-region; Along the fourth direction, the two driving transistors are respectively located in two non-adjacent second sub-regions.

7. The light emitting panel according to claim 5, wherein: The subareas include a second subarea, and one of the second subareas includes six of the light-emitting elements and two of the driving transistors; Three of the light-emitting elements are arranged along the fourth direction to form a first sub-region, and two of the light-emitting elements are arranged along the fifth direction to form a second sub-region; Along the fifth direction, the two driving transistors are respectively located in two adjacent first sub-regions; Along the fourth direction, the two driving transistors are respectively located in two non-adjacent second sub-regions.

8. The light emitting panel according to claim 5, wherein: The subareas include a third subarea, and one of the third subareas includes nine of the light-emitting elements and two of the driving transistors; Three of the light-emitting elements are arranged along the fourth direction to form a first sub-region, and three of the light-emitting elements are arranged along the fifth direction to form a second sub-region; Along the fifth direction, the two driving transistors are respectively located in two non-adjacent first sub-regions; Along the fourth direction, the two driving transistors are respectively located in two non-adjacent second sub-regions.

9. The light emitting panel according to claim 5, wherein: The subareas include a fourth subarea, and one of the fourth subareas includes twelve of the light-emitting elements and two of the driving transistors; Three of the light-emitting elements are arranged along the fourth direction to form a first sub-region, and four of the light-emitting elements are arranged along the fifth direction to form a second sub-region; Along the fifth direction, two driving transistors are spaced apart by two first sub-regions; Along the fourth direction, the two driving transistors are respectively located in two non-adjacent second sub-regions.

10. The light emitting panel according to claim 1, wherein: The ratio of the number of the light emitting elements to the number of the driving transistors is greater than or equal to 4:

1.

11. The light emitting panel according to claim 1, wherein: The light emitting panel includes a plurality of repeating units, each of which includes a plurality of the light emitting elements arranged in an array, and each of which also includes a plurality of the driving transistors; In one of the repeating units, the ratio of the number of the light-emitting elements to the number of the driving transistors is greater than or equal to 4:

1.

12. The light emitting panel according to claim 11, wherein: In one of the repeating units, the ratio of the number of the light-emitting elements to the number of the driving transistors is 8:

1.

13. The light emitting panel according to claim 12, wherein: In at least one of the repeating units, the number of the driving transistors corresponding to one of the light-emitting element rows and / or one of the light-emitting element columns is less than or equal to 1.

14. The light emitting panel according to claim 13, wherein: In one of the repeating units, the number of the light-emitting elements included in the light-emitting element row is M1, the number of the light-emitting elements included in the light-emitting element column is N1, M1≥4, N1≥2.

15. The light emitting panel according to claim 14, wherein: M1=N1=8; The number of the driving transistors corresponding to one light-emitting element row and / or one light-emitting element column is equal to one.

16. The light emitting panel according to claim 12, wherein: In at least one of the repeating units, the number of the driving transistors corresponding to one of the light-emitting element rows and / or one of the light-emitting element columns is less than or equal to 2.

17. The light emitting panel according to claim 16, wherein: In one of the repeating units, the number of the light-emitting elements in the light-emitting element row is M2, the number of the light-emitting elements in the light-emitting element column is N2, M2>N2, M2≥8, N2<8.

18. The light emitting panel according to claim 11, wherein: In one of the repeating units, the ratio of the number of the light-emitting elements to the number of the driving transistors is 4:

1.

19. The light emitting panel according to claim 18, wherein: The light emitting panel includes a fifth partition and a sixth partition, the fifth partition includes at least one light emitting element row, and the sixth partition includes at least one light emitting element row; The fifth partition and the sixth partition are arranged in sequence along the second direction; In the fifth subarea, the driving transistor is located in an odd-numbered column of light-emitting elements; In the sixth subarea, the driving transistor is located in an even-numbered column of light-emitting elements.

20. The light emitting panel according to claim 19, wherein: In one of the repeating units, the number of the light-emitting elements included in the light-emitting element row is M3, the number of the light-emitting elements included in the light-emitting element column is N3, M3=2, N3=4; The number of the driving transistors corresponding to the odd-numbered light-emitting element rows is equal to 1, and the number of the driving transistors corresponding to the even-numbered light-emitting element rows is equal to 0; The number of the driving transistors corresponding to one light emitting element column is equal to 1.

21. The light-emitting panel according to claim 18, wherein: The light emitting panel includes a seventh partition and an eighth partition, the seventh partition includes at least one light emitting element row, and the eighth partition includes at least one light emitting element row; The seventh partition and the eighth partition are arranged in sequence along the second direction; In the seventh partition and the eighth partition, the driving transistors are all located in the odd-numbered light-emitting element columns, and the even-numbered light-emitting element columns do not include the driving transistors; or, in the seventh partition and the eighth partition, the driving transistors are all located in the even-numbered light-emitting element columns, and the odd-numbered light-emitting element columns do not include the driving transistors.

22. The light emitting panel according to claim 21, wherein: In one of the repeating units, the number of the light-emitting elements included in the light-emitting element row is M4, the number of the light-emitting elements included in the light-emitting element column is N4, M4=2, N4=2; The number of the driving transistors corresponding to one of the light-emitting element rows is equal to 1, and the number of the driving transistors corresponding to another light-emitting element row is equal to 0; The number of the driving transistors corresponding to one of the light-emitting element columns is equal to 1, and the number of the driving transistors corresponding to the other light-emitting element column is equal to 0.

23. The light emitting panel according to claim 21, wherein: In one of the repeating units, the number of the light-emitting elements included in the light-emitting element row is M5, the number of the light-emitting elements included in the light-emitting element column is N5, M5=4, N5=2; The number of the driving transistors corresponding to the odd-numbered light-emitting element columns is equal to 1, and the number of the driving transistors corresponding to the even-numbered light-emitting element columns is equal to 0; The number of the driving transistors corresponding to one light-emitting element row is equal to one.

24. The light-emitting panel according to claim 11, wherein: A plurality of the repeating units are arranged along the first direction to form a repeating unit row, and a plurality of the repeating units are arranged along the second direction to form a repeating unit column.

25. The light emitting panel according to claim 24, characterized in that In one repeating unit row and / or one repeating unit column, the drive transistors of at least two repeating units are arranged in different ways.

26. The light-emitting panel according to claim 1, wherein: In a direction parallel to the plane where the base substrate is located, a distance between adjacent driving transistors and light-emitting elements is greater than or equal to 1 mm.

27. The light emitting panel according to claim 1, wherein: The base substrate further includes a shielding glue, and in a direction perpendicular to the plane where the base substrate is located, the shielding glue overlaps with the driving transistor.

28. The light emitting panel according to claim 1, wherein: The light emitting element includes a micro light emitting diode or a sub-millimeter light emitting diode.

29. A display device, characterized in that: The light-emitting panel comprises the light-emitting panel according to any one of claims 1 to 28.

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