Substrate processing device, substrate processing method, semiconductor device manufacturing method, and computer readable recording medium

Abstract

The present invention provides a substrate processing device, a substrate processing method, a method for manufacturing a semiconductor device, and a computer-readable recording medium. Even when the detoxification device is stopped, the processing gas is rendered harmless. It has: a reaction tube that accommodates the substrate; a processing gas supply unit that supplies processing gas into the reaction tube; an exhaust unit that exhausts the processing gas in the reaction tube; an exhaust gas treatment chamber that is connected to the exhaust unit to treat the exhausted processing gas; a first inert gas supply unit that is connected to an inert gas supply source that supplies the first inert gas into the reaction tube and supplies the first inert gas to the exhaust gas treatment chamber; a second inert gas supply unit that supplies the second inert gas to the exhaust gas treatment chamber; an exhaust pipe that exhausts the gas in the exhaust gas treatment chamber; and a control unit that is configured to control the first inert gas supply unit and the second inert gas supply unit. During the period when the processing gas is processed in the exhaust gas treatment chamber, the first inert gas is supplied to the exhaust gas treatment chamber from the first inert gas supply unit, and when the processing of the exhaust gas treatment chamber is stopped, the second inert gas is supplied to the exhaust gas treatment chamber from the second inert gas supply unit.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, a program, a recording medium, and an exhaust gas treatment system. Background Art

[0002] In a substrate processing apparatus used in one process of manufacturing a semiconductor device, a detoxification device is used to perform detoxification treatment on a processing gas used in the substrate processing apparatus.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-073772

[0006] Patent Document 2: Japanese Patent Application Publication No. 2009-88308 Summary of the invention

[0007] Problems to be solved by the invention

[0008] As described above, when the harm removal device stops for some reason, it is necessary to render the treated gas harmless by other means.

[0009] The present disclosure provides a technology capable of rendering a processing gas harmless even when a harm removal device is stopped.

[0010] Means for solving problems

[0011] According to one embodiment of the present disclosure, for example, a technology is provided, comprising: a reaction tube for accommodating a substrate; a processing gas supply unit for supplying processing gas into the reaction tube; an exhaust unit for exhausting the processing gas in the reaction tube; an exhaust gas treatment chamber connected to the exhaust unit for treating the exhausted processing gas; a first inert gas supply unit connected to an inert gas supply source for supplying the first inert gas into the reaction tube and supplying the first inert gas to the exhaust gas treatment chamber; a second inert gas supply unit for supplying the second inert gas to the exhaust gas treatment chamber; an exhaust pipe for exhausting the gas in the exhaust gas treatment chamber; and a control unit configured to control the first inert gas supply unit and the second inert gas supply unit so that the first inert gas is supplied to the exhaust gas treatment chamber from the first inert gas supply unit during the processing of the processing gas in the exhaust gas treatment chamber, and the second inert gas is supplied to the exhaust gas treatment chamber from the second inert gas supply unit when the processing of the exhaust gas treatment chamber is stopped.

[0012] Effects of the Invention

[0013] According to the present disclosure, even when the harm removal device is stopped, the processing gas can be rendered harmless. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic longitudinal sectional view showing a vertical processing furnace of a substrate processing apparatus according to one embodiment of the present disclosure.

[0015] Figure 2 is along Figure 1 A schematic cross-sectional view along line AA in FIG.

[0016] Figure 3 It is a diagram schematically showing a substrate processing apparatus and an exhaust gas processing system.

[0017] Figure 4 This is a schematic configuration diagram of a controller of a substrate processing apparatus, and is a diagram showing a control system of the controller by means of a block diagram.

[0018] Figure 5 It is a flowchart showing the substrate processing process.

[0019] Figure 6 It is a diagram showing the timing of gas supply.

[0020] Figure 7 This is a flow chart showing the exhaust gas treatment process. DETAILED DESCRIPTION

[0021] <One embodiment of the present disclosure>

[0022] Hereinafter, one embodiment of the present disclosure will be described.

[0023] (1) Structure of substrate processing apparatus

[0024] The substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically mounted by being supported by a heater base (not shown) as a holding plate.

[0025] Inside the heater 207, an outer tube 203 constituting a reaction container (processing container) as a reaction tube is arranged concentrically with the heater 207. The outer tube 203 is made of, for example, quartz (SiO 2 ), silicon carbide (SiC) and other heat-resistant materials, and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the outer tube 203, a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS) and is formed into a cylindrical shape with an open upper end and a lower end. An O-ring 220a is provided as a sealing member between the upper end of the manifold 209 and the outer tube 203. The manifold 209 is supported on the heater base, whereby the outer tube 203 is installed vertically.

[0026] An inner tube 204 constituting a reaction container as a reaction tube is disposed inside the outer tube 203. The inner tube 204 is made of, for example, quartz (SiO 2 ), silicon carbide (SiC) and other heat-resistant materials, and is formed into a cylindrical shape with a closed upper end and an open lower end. The processing container (reaction container) as a reaction tube is mainly composed of an outer tube 203, an inner tube 204, and a collecting pipe 209. A processing chamber 201 is formed in the hollow part of the tube of the processing container (inside the inner tube 204).

[0027] The processing chamber 201 is configured to accommodate wafers 200 as substrates in a state where wafers 200 are arranged in multiple stages in a horizontal posture in the vertical direction by means of a wafer boat 217 to be described later.

[0028] In the processing chamber 201, nozzles 410, 420, 430 are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204. The nozzles 410, 420, 430 are respectively connected to the gas supply pipes 310, 320, 330. However, the processing furnace 202 of this embodiment is not limited to the above-mentioned form.

[0029] Mass flow controllers (MFCs) 312, 322, and 332 as flow controllers (flow control units) are provided in order from the upstream side of the gas supply pipes 310, 320, and 330, respectively. In addition, valves 314, 324, and 334 as opening and closing valves are provided in the gas supply pipes 310, 320, and 330, respectively. The downstream sides of the valves 314, 324, and 334 of the gas supply pipes 310, 320, and 330 are connected to gas supply pipes 510, 520, and 530 for supplying inert gas, respectively. MFCs 512, 522, and 532 as flow controllers (flow control units) and valves 514, 524, and 534 as opening and closing valves are provided in order from the upstream side of the gas supply pipes 510, 520, and 530, respectively.

[0030] The front ends of the gas supply pipes 310, 320, 330 are connected to the nozzles 410, 420, 430, respectively. The nozzles 410, 420, 430 are configured as L-shaped nozzles, and the horizontal portions thereof are provided to penetrate the side wall of the manifold 209 and the inner tube 204. The vertical portions of the nozzles 410, 420, 430 are provided inside the preliminary chamber 201a formed in a channel shape (groove shape) protruding outward in the radial direction of the inner tube 204 and extending in the vertical direction, and are provided upward (above the arrangement direction of the wafers 200) along the inner wall of the inner tube 204 in the preliminary chamber 201a.

[0031] The nozzles 410, 420, 430 are arranged to extend from the lower area of ​​the processing chamber 201 to the upper area of ​​the processing chamber 201, and a plurality of gas supply holes 410a, 420a, 430a are respectively arranged at positions opposite to the wafer 200. Thus, the processing gas is respectively supplied to the wafer 200 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430. The gas supply holes 410a, 420a, 430a are arranged in plurality from the lower part to the upper part of the inner tube 204, each having the same opening area, and are arranged at the same opening spacing. However, the gas supply holes 410a, 420a, 430a are not limited to the above-mentioned manner. For example, the opening area may be gradually increased from the lower part to the upper part of the inner tube 204. Thus, the flow rate of the gas supplied from the gas supply holes 410a, 420a, 430a can be made more uniform.

[0032] Gas supply holes 410a, 420a, 430a of a plurality of nozzles 410, 420, 430 are provided at height positions from the lower part to the upper part of the wafer boat 217 described later. Therefore, the processing gas supplied from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 into the processing chamber 201 is supplied to the entire area of ​​the wafers 200 stored from the lower part to the upper part of the wafer boat 217. The nozzles 410, 420, 430 may be provided to extend from the lower area to the upper area of ​​the processing chamber 201, but are preferably provided to extend to the vicinity of the top of the wafer boat 217.

[0033] As a processing gas, a raw material gas (metal-containing gas) containing a metal element is supplied from a gas supply pipe 310 into the processing chamber 201 via an MFC 312, a valve 314, and a nozzle 410. As a raw material, for example, tungsten fluoride (WF) containing tungsten (W) as a metal element and as a halogen raw material (halide, halogen tungsten raw material) is used. 6 ).

[0034] As a processing gas, a reducing gas is supplied from a gas supply pipe 320 into the processing chamber 201 via an MFC 322, a valve 324, and a nozzle 420. As the reducing gas, for example, a gas containing hydrogen (H), or a gas containing silicon (Si) and hydrogen and not containing halogen can be used. For example, hydrogen (H 2 ) gas, monosilane (SiH 4 ) gas, disilane (Si 2 H 6 ) gas and other silane-based gases. These gases act as reducing agents. In addition, these gases have the property of being flammable and are also called combustible gases.

[0035] The reaction gas that reacts with the raw material gas can be supplied from the gas supply pipe 330 into the processing chamber 201 via the MFC 332, the valve 334, and the nozzle 430 as the processing gas. As the reaction gas, for example, a nitrogen-containing gas such as ammonia (NH 3 )gas.

[0036] As an inert gas, nitrogen (N 2 ) gas is supplied from gas supply pipes 510, 520, 530 to the processing chamber 201 via MFCs 512, 522, 532, valves 514, 524, 534, and nozzles 410, 420, 430, respectively. 2 Gas is described as an example of an inert gas, but as an inert gas, except N 2 In addition to the gas, for example, a rare gas such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, or xenon (Xe) gas may be used.

[0037] The processing gas supply unit (also referred to as the processing gas supply system) is mainly composed of gas supply pipes 310, 320, MFC312, 322, valves 314, 324, and nozzles 410, 420, but only nozzles 410, 420 may be considered as the processing gas supply system. The processing gas supply system may also be referred to as the gas supply system. When the raw gas is made to flow from the gas supply pipe 310, the raw gas supply system is mainly composed of the gas supply pipe 310, MFC312, and valve 314, but the nozzle 410 may also be considered to be included in the raw gas supply system. In addition, when the reducing gas is made to flow from the gas supply pipe 320, the reducing gas supply system is mainly composed of the gas supply pipe 320, MFC322, and valve 324, but the nozzle 420 may also be considered to be included in the reducing gas supply system. In addition, the inactive gas supply system is mainly composed of gas supply pipes 510, 520, MFC512, 522, and valves 514, 524. In addition, the gas supply pipe 330, MFC332, and valve 334 may also be included in the processing gas supply system. It is sufficient to appropriately add gas supply pipes, MFCs, and valves according to the type of gas required for film formation. When the reaction gas is made to flow from the gas supply pipe 330, the reaction gas supply system is mainly composed of the gas supply pipe 330, MFC332, and valve 334, but the nozzle 430 may also be included in the reaction gas supply system. In the case where a nitrogen-containing gas is supplied from the gas supply pipe 330 as a reaction gas, the reaction gas supply system can also be called a nitrogen-containing gas supply system. In addition, the gas supply pipe 530, MFC532, and valve 534 may also be added to the inert gas supply system. In addition, the processing gas supply unit in the present disclosure may also be composed only of a structure for supplying a reaction gas (reducing gas). Specifically, it may be composed of a nozzle 420, or it may be composed of a structure (reducing gas supply system) that supplies gas to the nozzle 420.

[0038] Regarding the gas supply method in this embodiment, the gas is supplied through the nozzles 410 and 420 disposed in the preparatory chamber 201a in the annular longitudinal space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200. Then, the gas is ejected into the inner tube 204 from the plurality of gas supply holes 410a and 420a provided at the positions of the nozzles 410 and 420 facing the wafers. More specifically, the raw material gas and the like are ejected in a direction parallel to the surface of the wafer 200 through the gas supply holes 410a and 420a of the nozzle 410 and the gas supply holes 420a of the nozzle 420.

[0039] The exhaust hole (exhaust port) 204a is a through hole formed in the side wall of the inner tube 204 and at a position opposite to the nozzles 410 and 420, for example, a slit-shaped through hole opened in a vertical direction. The gas supplied from the gas supply holes 410a and 420a of the nozzles 410 and 420 into the processing chamber 201 and flowing on the surface of the wafer 200 flows into the exhaust path 206 formed by the gap formed between the inner tube 204 and the outer tube 203 through the exhaust hole 204a. Then, the gas flowing into the exhaust path 206 flows into the exhaust pipe 231 and is exhausted to the outside of the processing furnace 202.

[0040] The exhaust hole 204a is provided at a position opposite to the plurality of wafers 200, and the gas supplied from the gas supply holes 410a and 420a to the vicinity of the wafers 200 in the processing chamber 201 flows in the horizontal direction and then flows into the exhaust path 206 through the exhaust hole 204a. The exhaust hole 204a is not limited to being a slit-shaped through hole, and may be composed of a plurality of holes.

[0041] An exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided on the manifold 209. The exhaust pipe 231 is connected to a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and a vacuum pump 246 as a vacuum exhaust device in sequence from the upstream side. The APC valve 243 opens and closes the valve while the vacuum pump 246 is in operation, thereby enabling vacuum exhaust and vacuum exhaust stop in the processing chamber 201, and by adjusting the valve opening while the vacuum pump 246 is in operation, the pressure in the processing chamber 201 can be adjusted. The exhaust section (also referred to as an exhaust system) is mainly composed of the exhaust hole 204a, the exhaust path 206, the exhaust pipe 231, the APC valve 243 and the pressure sensor 245. The vacuum pump 246 can also be considered to be included in the exhaust system.

[0042] A sealing cover 219 as a furnace cover capable of hermetically closing the lower end opening of the manifold 209 is provided below the manifold 209. The sealing cover 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The sealing cover 219 is formed of a metal material such as SUS and is formed in a disc shape. An O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219. A rotating mechanism 267 for rotating the wafer boat 217 storing the wafer 200 is provided on the opposite side of the processing chamber 201 of the sealing cover 219. The rotating shaft 255 of the rotating mechanism 267 penetrates the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be raised and lowered in the vertical direction by the wafer boat elevator 115 as a lifting mechanism vertically provided outside the outer tube 203. The boat elevator 115 is configured to move the boat 217 into and out of the processing chamber 201 by raising and lowering the sealing cap 219. The boat elevator 115 is configured as a transport device (transport mechanism) that transports the boat 217 and the wafers 200 stored in the boat 217 into and out of the processing chamber 201.

[0043] The wafer boat 217 as a substrate support is configured to arrange a plurality of wafers 200, for example, 25 to 200 wafers, at intervals in the vertical direction in a horizontal posture and in a state where the centers are aligned with each other. The wafer boat 217 is made of a heat-resistant material, such as quartz, SiC, etc. For example, a heat insulation plate 218 made of a heat-resistant material, such as quartz, SiC, etc., is supported in a horizontal posture at multiple stages (not shown) at the lower part of the wafer boat 217. According to this structure, it is difficult for the heat from the heater 207 to be transferred to the sealing cover 219 side. However, the present embodiment is not limited to the above-mentioned method. For example, instead of providing the heat insulation plate 218 at the lower part of the wafer boat 217, a heat insulation tube may be provided, and the heat insulation tube may be configured as a cylindrical component made of a heat-resistant material, such as quartz, SiC, etc.

[0044] like Figure 2 As shown, a temperature sensor 263 as a temperature detector is provided in the inner tube 204, and the amount of current supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving a desired temperature distribution in the processing chamber 201. The temperature sensor 263 is configured in an L shape similarly to the nozzles 410, 420, and 430, and is provided along the inner wall of the inner tube 204.

[0045] like Figure 3As shown, the downstream side of the vacuum pump 246 connected to the exhaust part of the substrate processing device 10 is connected to the exhaust gas treatment system 600 including the exhaust gas treatment chamber 601. The vacuum pump 246 is connected to the exhaust gas treatment chamber 601 through the exhaust pipe 603. A valve 604 is provided as a first valve in the exhaust pipe 603 from the upstream side (vacuum pump side). In addition, the upstream side of the valve 604 is connected to the bypass exhaust pipe 605, and the bypass exhaust pipe 605 bypasses the exhaust gas to the equipment exhaust system. A valve 606 is provided as a second valve in the bypass exhaust pipe 605. In addition, the valve 604 and the valve 606 may not be separate valves, but may be composed of the same valve, that is, a three-way valve 607. The exhaust gas of the substrate processing device 10 is supplied (exhausted) to the exhaust gas treatment chamber 601 via the vacuum pump 246, the valve 604, and the exhaust pipe 603.

[0046] In addition, it is sometimes configured so that the exhaust gas from a plurality of substrate processing apparatuses 10 can be supplied to the exhaust gas treatment chamber 601. In the case where there are a plurality of substrate processing apparatuses 10, Figure 3 As shown by the dotted line, the exhaust pipe 603, the valves 604, 606, the bypass exhaust pipe 605, etc. only need to be increased by an amount corresponding to the number of substrate processing apparatuses 10.

[0047] <Exhaust gas treatment system>

[0048] The exhaust gas treatment system is provided with at least an exhaust gas treatment chamber 601. A processing unit 601a for detoxifying the exhaust gas supplied to the exhaust gas treatment chamber 601 and a detection unit 601b for detecting the operation of the processing unit 601a are provided in the exhaust gas treatment chamber 601. In addition, the detection unit 601b is configured to be able to send the detected data (measured value) to the exhaust gas controller 601c or the controller 121 described later. Here, the processing unit 601a is composed of an electrode or a heating source that generates a flame or plasma in the exhaust gas treatment chamber 601. The detection unit 601b is composed of a flame sensor, a light sensor, a matching box, etc., and is configured to be able to detect whether the treatment in the exhaust gas treatment chamber 601 is being carried out. Specifically, it is configured to be able to measure light, electricity ignited by the electrode, etc., with respect to whether a flame or plasma has been generated.

[0049] The exhaust gas treatment chamber 601 is configured to be able to supply N as an inert gas from the first inert gas supply source 608 and the second inert gas supply source 609, respectively. 2 The first inert gas supply source 608 supplies nitrogen (N 2 ) gas, and the second inert gas supply source 609 supplies nitrogen (N 2 Here, the first inert gas supply source 608 refers to an N gas provided in a facility of a semiconductor device manufacturing plant. 2The second inert gas supply source 609 is provided in one or both of the substrate processing apparatus 10 and the exhaust gas treatment system 600. 2 Gas cylinders or capable of storing N 2 The first inert gas supply source 608 is connected to the exhaust gas treatment chamber 601 through a gas supply pipe 608a. MFC608b and valve 608c are set on the gas supply pipe 608a from the upstream side. Here, the first inert gas supply unit is composed of a gas supply pipe 608a, an MFC608b, and a valve 608c. The second inert gas supply source 609 is connected to the exhaust gas treatment chamber 601 through a gas supply pipe 609a. A flow adjustment unit 609b and a valve 609c are set on the gas supply pipe 609a from the upstream side. The flow adjustment unit 609b is composed of any one of an MFC, a needle valve, and a throttle hole. It is preferably composed of any one of a needle valve and a throttle hole, and more preferably composed of a throttle hole. Flow adjustment units such as needle valves and throttle holes can adjust the flow without using electricity or compressed air. Therefore, even if electricity and compressed air cannot be supplied for some reason, inert gas can be supplied to the exhaust gas treatment chamber. Here, the second inert gas supply unit is composed of a gas supply pipe 609 a , a flow rate adjustment unit 609 b , and a valve 609 c .

[0050] In addition, when the second inert gas supply source 609 is formed by a tank capable of storing inert gas, as shown in FIG. Figure 3 As shown by the dotted line, the first inert gas supply source 608 and the second inert gas supply source 609 may be connected via a gas supply pipe 609d, and a valve 609e may be provided on the gas supply pipe 609d so that the inert gas can be supplied from the first inert gas supply source 608 to the second inert gas supply source 609. In this case, for example, the inert gas is stored in the second inert gas supply source 609 before the substrate processing apparatus 10 processes.

[0051] In addition, the exhaust gas treatment chamber 601 is configured to be able to supply an additive gas that has an effect of promoting exhaust gas treatment. Here, the additive gas refers to a gas that promotes combustion and the generation of plasma. As the gas that promotes combustion, for example, propane (C 3 H 8 ) gas, hydrogen (H 2 ) gas, oxygen (O 2 ) gas, dry air, etc. Propane gas is mainly used. It is preferable to use a gas of a different type from the reducing gas. As a gas that promotes the generation of plasma, there are rare gases such as argon (Ar) gas, helium (He) gas, and neon (Ne) gas. The added gas is supplied from the added gas source 610 to the exhaust gas treatment chamber 601 via the gas supply pipe 610a. MFC610b and valve 610c are set from the upstream side of the gas supply pipe 610a.

[0052] The exhaust gas treatment chamber 601 is connected to an exhaust pipe 611 for exhausting the exhaust gas treated in the exhaust gas treatment chamber 601 , and is configured to be able to exhaust the exhaust gas to an exhaust facility of a semiconductor device manufacturing plant.

[0053] The exhaust gas treatment system 600 is composed of at least an exhaust gas treatment chamber 601, exhaust pipes 603 and 611, a bypass exhaust pipe 605, and valves 604, 606, 608c, 609c, and 612. The above-mentioned other structures may be added to the exhaust gas treatment system 600.

[0054] like Figure 4 As shown, the controller 121 as a control unit (control unit) is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus. The controller 121 is connected to an input / output device 122 for inputting and outputting data, such as a touch panel.

[0055] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device, a process recipe recording the process and conditions of the semiconductor device manufacturing method described later, etc. are stored in the storage device 121c in a readable manner. The process recipe is a combination of processes (steps) in the semiconductor device manufacturing method described later by the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are also collectively referred to as programs. When the term "program" is used in this specification, sometimes only the process recipe is included alone, sometimes only the control program is included alone, or sometimes a combination of the process recipe and the control program is included. RAM121b is configured as a memory area (work area) for temporarily holding programs, data, etc. read by CPU121a.

[0056] The I / O port 121d is configured to be connectable to the above-mentioned MFCs 312, 322, 332, 512, 522, 532, valves 314, 324, 334, 514, 524, 534, pressure sensor 245, APC valve 243, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, wafer boat elevator 115, exhaust gas treatment system 600, etc. In addition, the exhaust gas treatment system 600 is configured to be connectable to the exhaust gas controller 601c.

[0057] The CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a recipe from the storage device 121c in response to input of an operation command from the input / output device 122. The CPU 121a is configured to control, according to the contents of the read recipe, the flow rate adjustment operation of various gases by the MFCs 312, 322, 332, 512, 522, 532, the opening and closing operation of the valves 314, 324, 334, 514, 524, 534, the opening and closing operation of the APC valve 243 and the pressure adjustment operation by the APC valve 243 based on the pressure sensor 245, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the start and stop of the vacuum pump 246, the rotation of the wafer boat 217 and the rotation speed adjustment operation by the rotation mechanism 267, the lifting and lowering operation of the wafer boat 217 by the wafer boat elevator 115, the storage operation of the wafer 200 in the wafer boat 217, and the like. In addition, CPU121a or exhaust gas controller 601c is configured to control the processing action performed by the processing unit 601a in the exhaust gas treatment system 600, the detection action performed by the detection unit 601b, the flow adjustment action of various gases of MFC608b, 610b and flow adjustment unit 609b based on the detection performed by the detection unit 601b, the opening and closing action of valves 604, 605, 608c, 609c, 610c, and 612, etc.

[0058] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (e.g., a magnetic disk such as a magnetic tape, a floppy disk, a hard disk, an optical disk such as a CD, a DVD, an optical magnetic disk such as an MO, a USB memory, a semiconductor memory such as a memory card) 123 on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they are also collectively referred to as recording media. In this specification, the recording medium sometimes includes only the storage device 121c alone, sometimes includes only the external storage device 123 alone, or sometimes includes both. The provision of the program to the computer can also be carried out without using the external storage device 123, but using communication means such as the Internet or a dedicated line.

[0059] (2) Substrate processing step (film forming step)

[0060] As one of the steps in the manufacturing process of a semiconductor device, Figure 5 An example of a process of forming a metal film constituting a gate electrode on a wafer 200 will be described. The process of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operations of the various components constituting the substrate processing apparatus 10 are controlled by the controller 121.

[0061] In this specification, when the term "wafer" is used, it may refer to "the wafer itself" or "a laminate of a wafer and a predetermined layer, film, etc. formed on the surface thereof". In this specification, when the term "surface of a wafer" is used, it may refer to "the surface of the wafer itself" or "the surface of a predetermined layer, film, etc. formed on the wafer". In this specification, when the term "substrate" is used, it has the same meaning as the term "wafer".

[0062] (Substrate carrying step S100)

[0063] When multiple wafers 200 are loaded (wafer loading) into the wafer boat 217, as shown in FIG. Figure 1 As shown, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried (boat loading) into the processing chamber 201. In this state, the seal cap 219 closes the lower end opening of the outer tube 203 via the O-ring 220.

[0064] (Pressure Adjustment and Temperature Adjustment Step S200)

[0065] The vacuum pump 246 is used to perform vacuum exhaust so that the pressure (vacuum degree) in the processing chamber 201 is the desired one. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled (pressure adjusted) based on the measured pressure information. The vacuum pump 246 is kept in a state of being always in operation at least until the processing of the wafer 200 is completed. In addition, the heater 207 is used to heat the processing chamber 201 so that the temperature in the processing chamber 201 is the desired one. At this time, the amount of power supplied to the heater 207 is feedback-controlled (temperature adjusted) based on the temperature information detected by the temperature sensor 263 so that the temperature distribution in the processing chamber 201 is the desired one. The heating in the processing chamber 201 by the heater 207 is continued at least until the processing of the wafer 200 is completed.

[0066] [Film Forming Step S300]

[0067] Next, a step of forming a metal film is performed on the wafer 200 as a film forming step S300. The metal film is described as a W film. Figure 5 and Figure 6 The film forming step S300 will be described.

[0068] (First Processing Gas Supplying Step S301)

[0069] First, the first process gas supply step S301 is performed. The valve 314 is opened to supply a raw material gas as the first process gas into the gas supply pipe 310. Here, the raw material gas is WF 6Gas. WF 6 The gas is flow-regulated by the MFC 312, supplied from the gas supply hole 410a of the nozzle 410 into the processing chamber 201, and exhausted from the exhaust pipe 231. At this time, WF is supplied to the wafer 200. 6 At this time, valve 514 is opened to allow N 2 An inert gas such as N2O4 gas flows in the gas supply pipe 510. The N2O4 gas flowing in the gas supply pipe 510 2 The gas flow is adjusted by MFC512 and WF 6 The gas is supplied into the processing chamber 201 and exhausted from the exhaust pipe 231. At this time, in order to prevent WF 6 The gas enters the nozzles 420 and 430, and the valves 524 and 534 are opened to allow N 2 The gas flows in the gas supply pipes 520 and 530. 2 The gas is supplied into the processing chamber 201 through the gas supply pipes 320 , 330 and the nozzles 420 , 430 , and is exhausted from the exhaust pipe 231 .

[0070] At this time, the APC valve 243 is adjusted to set the pressure in the processing chamber 201 to a range of, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa. The WF controlled by the MFC 312 6 The supply flow rate of the gas is set to, for example, 0.01 to 10 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. 2 The supply flow rate of the gas is set to, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm. At this time, the temperature of the heater 207 is set to a temperature such that the temperature of the wafer 200 is, for example, 250 to 600°C.

[0071] At this time, the gas flowing in the processing chamber 201 is only WF 6 Gas and N 2 Gas. By WF 6 The gas is supplied to form a W-containing layer on the wafer 200 (underlayer on the surface). The W-containing layer may be a W layer containing fluorine (F) or a WF 6 The adsorption layer may also contain both of them.

[0072] (Residual Gas Removal Step S302)

[0073] After the W-containing layer is formed, valve 314 is closed to stop WF 6At this time, the APC valve 243 of the exhaust pipe 231 is kept open, and the processing chamber 201 is evacuated by the vacuum pump 246 to remove the unreacted WF remaining in the processing chamber 201 or the WF that has contributed to the formation of the W-containing layer. 6 The gas is exhausted from the processing chamber 201. At this time, the valves 514, 524, and 534 are kept open to maintain N 2 Gas is supplied into the processing chamber 201. 2 The gas acts as a purge gas and can improve the removal of unreacted WF remaining in the processing chamber 201 or WF that has contributed to the formation of the W-containing layer. 6 The effect of exhausting gas from the processing chamber 201.

[0074] (Second Processing Gas Supplying Step S303)

[0075] Next, a step of supplying a reaction gas as a second process gas is performed. Here, the reaction gas is H 2 In addition, the second processing gas is usually a gas with reducing and flammable properties. In the second processing gas supply step S303, the valve 324 is opened to allow H 2 The gas flows in the gas supply pipe 320. 2 The gas is flow-regulated by the MFC 322, supplied from the gas supply hole 420a of the nozzle 420 into the processing chamber 201, and exhausted from the exhaust pipe 231. At this time, H is supplied to the wafer 200. 2 At this time, valve 524 is opened to allow N 2 An inert gas such as N2O4 gas flows in the gas supply pipe 520. The N2O4 gas flowing in the gas supply pipe 520 2 The gas flow is adjusted by MFC522 and H 2 The gas is supplied into the processing chamber 201 and exhausted from the exhaust pipe 231. In addition, in order to prevent H 2 The gas enters the nozzles 410 and 430, and the valves 514 and 534 are opened to allow N 2 The gas flows in the gas supply pipes 510 and 530. 2 The gas is supplied into the processing chamber 201 through the gas supply pipes 310 , 330 and the nozzles 410 , 430 , and is exhausted from the exhaust pipe 231 .

[0076] At this time, the APC valve 243 is adjusted to set the pressure in the processing chamber 201 to a pressure within a range of, for example, 1 to 3990 Pa. 2 The supply flow rate of the gas is set to be within the range of 0.1 to 50 slm, for example. 2The supply flow rate of each gas is set to be, for example, within the range of 0.1 to 20 slm. 2 The time of the gas is set to be, for example, within the range of 0.1 to 20 seconds. At this time, the temperature of the heater 207 is set to a temperature such that the temperature of the wafer 200 is, for example, within the range of 200 to 600. The gas flowing in the processing chamber 201 is only H 2 Gas and N 2 Gas, through H 2 The supply of the gas forms a W layer as a metal film having a thickness of, for example, less than one atomic layer to several atomic layers on the wafer 200 (underlayer on the surface).

[0077] (Residual Gas Removal Step S304)

[0078] After the W layer is formed, close valve 324 and stop H 2 Then, the H remaining in the processing chamber 201 that has not reacted or contributed to the formation of the W layer is removed by the same processing as the residual gas removal step S302. 2 Gas is exhausted from the processing chamber 201 .

[0079] (Determination Step S400)

[0080] By performing the cycle of the first processing gas supply step S301 to the residual gas removal step S304 in sequence more than once (predetermined number of times (n times)), a W film of a predetermined thickness is formed on the wafer 200. In the determination step S400, it is determined whether the predetermined number of times is n times or more. If it is n times or more, it is determined as Y (yes) and the film forming step S300 is terminated. If it is less than n times, it is determined as N (no) and the above cycle is continued. In addition, the above cycle is preferably performed multiple times.

[0081] In the above description, an example in which the residual gas removal steps S302 and S304 are performed is described. However, the residual gas removal steps S302 and S304 may not be performed, and a process in which the first processing gas and the second processing gas are reacted in a gas phase may be performed.

[0082] (Post-Purge and Atmospheric Pressure Restoration Step S500)

[0083] N is supplied into the processing chamber 201 from each of the gas supply pipes 510, 520, and 530. 2 The gas is discharged from the exhaust pipe 231. 2The gas functions as a purge gas, whereby the process chamber 201 is purged with an inert gas, and the gas and byproducts remaining in the process chamber 201 are removed from the process chamber 201 (post-purge). Thereafter, the atmosphere in the process chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the process chamber 201 is restored to normal pressure (atmospheric pressure restoration).

[0084] (Substrate unloading process S600)

[0085] After that, the sealing cap 219 is lowered by the wafer boat elevator 115, and the lower end of the inner tube 204 is opened. Then, the processed wafer 200 is carried out from the lower end of the inner tube 204 to the outside of the inner tube 204 while being supported by the wafer boat 217 (wafer boat unloading). After that, the processed wafer 200 is taken out of the wafer boat 217 (wafer taking out).

[0086] In this way, the substrate processing step is performed. In addition, in the substrate processing step, at least H 2 During the period of the gas, the next exhaust gas treatment step S700 is performed.

[0087] (Waste Gas Treatment Process S700)

[0088] The combustible gas containing H is exhausted from the substrate processing apparatus 10. 2 The exhaust gas is supplied to the exhaust gas treatment chamber 601 through the exhaust pipe 603. In the exhaust gas treatment chamber 601, the exhaust gas is rendered harmless by the treatment unit 601a.

[0089] (Harmless treatment)

[0090] A detoxification treatment is performed in the exhaust gas treatment chamber 601. Here, the detoxification treatment refers to at least any one of combustion, decomposition based on plasma, heating treatment (thermal decomposition based on heating), stabilization based on combination with other elements, dilution, capture (adsorption treatment), etc. When performing combustion treatment and plasma, energy is imparted to the target gas from the treatment unit 601a. ​​When combining with other elements, an active gas is supplied to the exhaust gas treatment chamber 601. During the dilution treatment, a first inactive gas is supplied from the gas supply pipe 608a. The exhaust gas rendered harmless by these treatments is discharged from the exhaust gas treatment chamber 601 via the exhaust pipe 611 to the exhaust equipment of the semiconductor device manufacturing plant.

[0091] Here, the structure of the processing unit 601a varies depending on the content of the detoxification treatment. For example, in the case of combustion treatment, it becomes an ignition source. In the case of plasma-based decomposition treatment, it is composed of an electrode that generates plasma. In the case of thermal decomposition based on heating, it is composed of a heating element (heater).

[0092] In the present disclosure, as a harmless treatment, H 2 The gas burns (reacts with oxygen O) to produce water (H 2 Here, oxygen is supplied as an added gas.

[0093] (Supply of additional gas)

[0094] The supply of the additional gas is continued at least while the combustible gas is supplied to the inner tube 204 as the reaction tube. Here, propane (C 3 H 8 The propane gas is flow-regulated by MFC 610b and supplied to the exhaust gas treatment chamber 601 via valve 610c. In addition, the flow rate of the propane gas can be adjusted to a predetermined flow rate, or the flow rate of the propane gas can be adjusted according to the H supplied to the inner tube 204 in the above-mentioned substrate processing step. 2 The gas flow rate is set by using MFC610b to automatically set the propane gas flow rate required for combustion. In addition, oxygen (O 2 ) gas. About O 2 The gas flow rate is set such that the ratio of hydrogen to oxygen is 2:1. 2 The flow rate of the gas. Regarding this setting, it can also be configured so that the CPU 121a of the controller 121 performs calculations, and the setting data of the flow rate can be sent from the controller 121 to the MFC 610b. In addition, it can also be configured so that the setting data of the flow rate is sent from the controller 121 to the MFC 610b via the exhaust gas controller 601c. In addition, in the process of the exhaust gas treatment chamber 601, when the additive gas is not used, the additive gas is not supplied.

[0095] (Dilution gas supply)

[0096] In addition, during the period of detoxification and waste gas treatment in the waste gas treatment chamber 601, a first inert gas is supplied to the waste gas treatment chamber 601 to dilute the waste gas. The first inert gas is supplied to the waste gas treatment chamber 601 from the first inert gas supply source 608 via the gas supply pipe 608a, MFC 608b, and valve 608c. The first inert gas is adjusted to a predetermined flow rate by MFC 608b. Here, nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas and other rare gas element gases, carbon dioxide (CO 2 ) gas and other non-flammable gases. In addition, N 2 Gas, rare gas, etc. can also be said to be non-flammable gas. In this disclosure, the use of N 2 Gas example.

[0097] (Error in the exhaust gas treatment system)

[0098] However, there is a case where the detoxification treatment in the exhaust gas treatment chamber 601 is stopped due to some reason (error). In this case, the error determination step S701 is configured to be executable.

[0099] (Error determination step S701)

[0100] In the error determination step S701, either or both of the exhaust gas controller 601c and the controller 121 at least determine whether there is an abnormality in the treatment in the exhaust gas treatment chamber 601. Specifically, the detection unit 601b provided in the exhaust gas treatment chamber 601 detects whether the combustion in the exhaust gas treatment chamber 601 has stopped, and based on the detected data (current value, voltage value, etc.), either or both of the exhaust gas controller 601c and the controller 121 determine whether the harmless treatment has stopped. In the case where the harmless treatment has not stopped, it is determined as N (no), and the error determination step S701 is repeatedly performed at a certain cycle. In the case where the harmless treatment has stopped, that is, after it is determined as Y (yes), the next exhaust path switching step S702 is performed.

[0101] (Exhaust Path Switching Step S702)

[0102] In the exhaust path switching process S702, the exhaust path is switched in such a way that the exhaust gas exhausted from the substrate processing device 10 is not supplied to the exhaust gas treatment chamber 601. Specifically, the exhaust controller 601c or the controller 121 closes the valve 604 as the first valve and opens the valve 606 as the second valve to change the path so that the exhaust gas from the substrate processing device 10 is discharged to the bypass exhaust pipe 605. The exhaust gas is first discharged from the bypass exhaust pipe 605 to the exhaust equipment of the factory of the semiconductor device. By switching the exhaust path in this way, it is possible to suppress the new exhaust gas from entering the exhaust gas treatment chamber 601, and it is possible to suppress the increase in the concentration of the exhaust gas in the exhaust gas treatment chamber 601.

[0103] After the exhaust path switching step S702, inert gas is supplied to reduce (dilute) the concentration of the exhaust gas in the exhaust treatment chamber 601. At this time, when a large amount of first inert gas is supplied from the gas supply pipe 608a as the first inert gas supply unit, the pressure of the first inert gas supply source 608 may decrease.

[0104] like Figure 3As shown, the first inert gas supply source 608 for supplying the first inert gas is configured to supply the inert gas to the inner tube 204 of the substrate processing apparatus 10 in addition to the exhaust gas treatment chamber 601. For example, there is a case where it is connected as the inert gas supply source such as the above-mentioned gas supply pipes 510, 520, 530. In addition, there is a case where it is connected not only to one substrate processing apparatus 10, but also to multiple substrate processing apparatuses 10. In such a case, the pressure of the first inert gas supply source 608 is temporarily reduced, which may affect the processing of the substrate processing apparatus 10. In this case, the problem of stopping the scheduled processing of the substrate processing apparatus 10 arises. Here, if the first inert gas supply source 608 is a pipeline of pure nitrogen, it may affect the heating treatment and film forming treatment of the substrate performed by the substrate processing apparatus 10. If the first inert gas supply source 608 is a pipeline of industrial nitrogen, it may affect the purge in the inner tube 204 of other substrate processing apparatuses 10, the purge in the conveying space (not shown) of the wafer 200 provided in the substrate processing apparatus 10, and the like. In addition, it may affect the dilution treatment of the exhaust gas treatment system 600 connected to other substrate processing apparatuses 10. Therefore, in the present disclosure, the controller 121 or the exhaust gas controller 601c is configured to be able to execute the second inert gas supply step S703, so that during the exhaust gas treatment in the exhaust gas treatment chamber 601, the first inert gas is supplied from the first inert gas supply unit to the exhaust gas treatment chamber 601, and when the treatment in the exhaust gas treatment chamber 601 is stopped, the second inert gas is supplied from the second inert gas supply unit to the exhaust gas treatment chamber 601.

[0105] (Second Inert Gas Supplying Step S703)

[0106] The second inert gas supplying step S703 will be described. In this step, the valve 609c is opened, and the second inert gas is supplied from the second inert gas supply source 609 to the exhaust gas treatment chamber 601 via the gas supply pipe 609a, the flow rate adjustment unit 609b, and the valve 609c.

[0107] The second inert gas is supplied at least until the gas concentration in the exhaust gas treatment chamber 601 is less than a predetermined concentration. Preferably, the supply flow rate from the second inert gas supply source 609 to the exhaust gas treatment chamber 601 is continuously changed after the second inert gas supply flow rate is temporarily stabilized. In addition, the second inert gas stored in the second inert gas supply source 609 may also be used up.

[0108] In addition, the supply of the first inert gas may be stopped during the supply of the second inert gas. In addition, the flow rate of the first inert gas may be maintained at the same flow rate as the flow rate during the normal detoxification treatment, and the second inert gas may be supplied in addition to the supply of the first inert gas. In addition, the flow rate may be changed in such a way that the flow rate of the first inert gas is smaller than the flow rate of the second inert gas.

[0109] In this way, the second inert gas supplying step S703 is performed.

[0110] (Second inert gas flow rate setting)

[0111] Here, the flow rate setting (flow rate data of the second inert gas) of the flow rate adjustment unit 609b may be set in advance to a predetermined flow rate, or may be set to the H used in the above-mentioned film forming process. 2 The flow rate data of the second inert gas is calculated and set based on the gas flow rate. 2 The flow data of the second inert gas is calculated and set based on the gas flow rate and the characteristic data of the gas. Here, the characteristic data of the gas includes at least any one of the explosion concentration, molecular weight, gas type, etc. In the case where the gas to be diluted is a flammable gas or an explosive gas, the flow rate of the inert gas is calculated in a manner that makes the concentration smaller than the explosion concentration. For example, the required inert gas flow rate can be calculated according to the formula "concentration X = flammable gas flow rate / (flammable gas flow rate + inert gas flow rate)". Here, the inert gas flow rate in the formula refers to any one of the flow rate of the second inert gas, the flow rate of the first inert gas, and the total value of the flow rate of the second inert gas. For example, when supplying 50slm of H 2 In the case of gas, the lower limit of the inert gas flow rate is 1200 slm. 2 In the case of gas, the lower limit of the inert gas flow rate is 1920 slm. 2 The explosive concentration of the gas is 4%. In addition, the characteristic data of the gas such as the explosive concentration and the molecular weight can be read from the gas safety data sheet (SDS: Safety Data Sheet). That is, these data can be recorded in the storage device 121c.

[0112] In the case where the flow rate adjustment unit 609b for adjusting the flow rate of the second inert gas is composed of a mass flow controller (MFC), the flow rate data of the second inert gas calculated by the above formula is set as the lower limit value of the flow rate adjustment unit 609b. That is, it is set so that a flow rate smaller than the calculated inert gas flow rate cannot be set. This setting is performed by the CPU 121a of the controller 121. In addition, it is also possible to configure so that the calculated flow rate data of the second inert gas is not set as the lower limit value of the flow rate adjustment unit 609b, and the calculated flow rate data of the second inert gas is output (reported) to the input / output device 122.

[0113] In addition, when the flow rate adjustment unit 609b is composed of a needle valve, an orifice, etc., the controller 121 can also be configured to be able to report a message to the input / output device 122 to urge the change of the flow rate setting of the needle valve or the replacement of the orifice with a flow rate greater than the calculated flow rate. With such a configuration, the flow rate setting operation of the flow rate adjustment unit 609b becomes easy.

[0114] This flow rate setting is performed at least before the second inert gas supply step S703. When the flow rate adjustment unit 609b is a structure in which the flow rate adjustment by a needle valve, a throttle hole, etc. cannot be easily performed, the needle valve is adjusted and the throttle hole of the corresponding flow rate is installed when assembling the substrate processing apparatus 10 and the exhaust gas treatment system 600.

[0115] In addition, an example of controlling the flow rate of the inert gas supplied in the second inert gas supply step S703 is described here, but the inert gas may be supplied to the exhaust gas treatment chamber 601 without flow control. By supplying the inert gas without flow control, the time for reducing the gas concentration in the exhaust gas treatment chamber 601 can be shortened. However, there is a possibility that the load of the exhaust equipment (not shown) of the semiconductor manufacturing plant connected to the rear stage of the exhaust gas treatment chamber 601 may increase, and there is a possibility that the pressure-resistant structure of the exhaust gas treatment system 600 may be required. Therefore, it is preferable to supply the inert gas to the exhaust gas treatment chamber 601 by adjusting the flow rate as described above.

[0116] In addition, here, an example is described in which the valve 608c as a part of the first inert gas supply unit and the valve 609c as a part of the second inert gas supply unit are controlled separately in the exhaust gas treatment chamber 601, but a three-way valve connecting the exhaust gas treatment chamber 601, the first inert gas supply unit, and the second inert gas supply unit may be provided instead of the valves 608c and 609c. In this case, the controller 121 or the exhaust gas controller 601c is configured to control the three-way valve when it is determined that the treatment of the exhaust gas treatment chamber 601 is stopped.

[0117] (3) Effects of this embodiment

[0118] According to the present embodiment, one or more of the following effects can be obtained.

[0119] (a) The concentration of combustible gas in the exhaust gas treatment chamber can be reduced.

[0120] (b) Even when the detoxification process in the exhaust gas treatment chamber is stopped, the concentration of the combustible gas can be reduced.

[0121] (c) By using the second inert gas supply source, it is possible to suppress a decrease in the pressure of the first inert gas supply source.

[0122] (d) By calculating the flow rate of the second inert gas based on the flow rate of the gas used in the film forming process, it is possible to reduce operational errors by operators (operators) of the substrate processing apparatus and operators of the exhaust gas treatment system.

[0123] (e) By calculating the flow rate of the second inert gas based on the gas flow rate used in the film forming process and the gas characteristic data, it is possible to reduce operational errors by operators of the substrate processing apparatus and operators of the exhaust gas treatment system.

[0124] (f) By setting the calculated second inert gas flow rate to a lower limit value, it is possible to reduce operational errors by an operator of the substrate processing apparatus or an operator of the exhaust gas treatment system.

[0125] (g) The calculated second inert gas flow rate is reported, thereby reducing operational errors by an operator of the substrate processing apparatus or an operator of the exhaust gas treatment system.

[0126] The embodiments of the present disclosure have been described in detail above, but the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present disclosure.

[0127] For example, in the above description, H is used in the step of forming a W film. 2 Gas is used as an example of a reducing gas (combustible gas), but the present disclosure is not limited thereto. Monosilane (SiH 4 ) gas, disilane (Si 2 H 6 ) gas and other silane-based gases. These gases are also flammable and therefore require the above-mentioned detoxification treatment. 4 In the case of the second inert gas, the lower limit of the second inert gas flow rate is 144 slm. 2 H 6 In the case of gas, the lower limit of the second inert gas flow rate is 398 slm. Regarding the lower limit of the explosion concentration, SiH4 Gas is 1.37%, Si 2 H 6 Gas is 0.5%.

[0128] In addition, in the above description, the process of forming a W film is described, but the present disclosure is not limited to this, and the process of forming a titanium nitride (TiN) film may also be used. In the process of forming a TiN film, TiCl 4 Gas, SiH 4 Gas and NH 3 Gas. Among these gases, at least SiH 4 When the gas is supplied, the above-mentioned detoxification treatment can be carried out.

[0129] In addition, the present disclosure is not limited to the process of forming these films, and can also be applied to the process of forming a Mo film, for example. In the process of forming the Mo film, MoO 2 Cl 2 、MoOCl 4 Any Mo-containing gas, H 2 、SiH 4 、Si 2 H 6 Any reducing gas, etc.

[0130] In addition, the present disclosure is not limited to the process of forming such various transition metal films, and can also be applied to the process of forming a Si film, for example. The Si film is formed using the above-mentioned silane-based gas.

[0131] As described above, the present invention is not limited to the process of forming a W film, but can also be applied to a process using a combustible gas.

[0132] Furthermore, the present invention can also be applied to processes using combustible gas or processes that require reducing the concentration of the used gas and then exhausting it.

[0133] Furthermore, the present disclosure has been described with reference to a case where the disclosure is applied to a double reaction tube composed of the outer tube 203 and the inner tube 204 , but the disclosure is not limited thereto and can also be applied to a single reaction tube.

[0134] As mentioned above, although various typical embodiments of the present disclosure have been described, the present disclosure is not limited to these embodiments, and appropriate combinations thereof can be used.

[0135] Explanation of symbols

[0136] 10 ...substrate processing device, 121 ...controller, 200 ...wafer (substrate), 201 ...processing chamber.

Claims

1. A substrate processing device, characterized in that: have: A reaction tube that accommodates a substrate; a processing gas supply unit for supplying processing gas into the reaction tube; An exhaust part, which exhausts the processing gas in the reaction tube; An exhaust gas treatment chamber connected to the exhaust portion for treating the exhausted treatment gas; a first inert gas supply unit connected to an inert gas supply source for supplying a first inert gas into the reaction tube, and supplying the first inert gas to the exhaust gas treatment chamber; a second inert gas supply unit for supplying a second inert gas to the exhaust gas treatment chamber; a flow rate adjustment unit, which is provided at the second inert gas supply unit and adjusts the second inert gas to a preset flow rate; an exhaust pipe for exhausting the gas in the exhaust gas treatment chamber; and A control unit is configured to control the first inert gas supply unit and the second inert gas supply unit so that the first inert gas is supplied from the first inert gas supply unit to the exhaust gas treatment chamber while the treatment gas is being treated in the exhaust gas treatment chamber, and the second inert gas is supplied from the second inert gas supply unit to the exhaust gas treatment chamber when the treatment in the exhaust gas treatment chamber is stopped.

2. The substrate processing device according to claim 1, characterized in that: The exhaust gas treatment chamber is provided with a detection unit for detecting a treatment state in the exhaust gas treatment chamber. The control unit is configured to be capable of determining whether to stop the process based on the data output by the detection unit.

3. The substrate processing device according to claim 2, characterized in that: The control unit is configured to control the first inert gas supply unit and the second inert gas supply unit so as to supply the second inert gas in addition to the first inert gas after determining that the process in the exhaust gas treatment chamber is stopped.

4. The substrate processing device according to claim 2, characterized in that: The control unit is configured to control the first inert gas supply unit and the second inert gas supply unit in such a manner that a flow rate of the second inert gas is greater than a flow rate of the first inert gas when the second inert gas is supplied from the second inert gas supply unit to the exhaust gas treatment chamber after it is determined that the treatment in the exhaust gas treatment chamber has stopped.

5. The substrate processing device according to claim 2, characterized in that: The exhaust gas treatment chamber, the first inert gas supply unit, and the second inert gas supply unit are connected via a three-way valve. The control unit is configured to be able to control the three-way valve when determining that the treatment in the exhaust gas treatment chamber is stopped.

6. The substrate processing device according to claim 2, characterized in that: A bypass exhaust pipe connected to an exhaust device is connected to the upstream side of the exhaust gas treatment chamber of the exhaust part, The substrate processing device comprises: a first valve provided at a position of the exhaust portion downstream of a connection position with the bypass exhaust pipe and upstream of the exhaust gas treatment chamber; and a second valve, which is disposed in the bypass exhaust pipe, The control unit is configured to control the first valve and the second valve so that the first valve is closed and the second valve is opened after determining that the treatment in the exhaust gas treatment chamber is stopped.

7. A substrate processing device, characterized in that: have: A reaction tube that accommodates the substrate; a processing gas supply unit for supplying processing gas into the reaction tube; An exhaust part, which exhausts the processing gas in the reaction tube; An exhaust gas treatment chamber connected to the exhaust portion for treating the exhausted treatment gas; a first inert gas supply unit connected to an inert gas supply source for supplying a first inert gas into the reaction tube, and supplying the first inert gas to the exhaust gas treatment chamber; a second inert gas supply unit for supplying a second inert gas to the exhaust gas treatment chamber; an exhaust pipe for exhausting the gas in the exhaust gas treatment chamber; and a control unit configured to control the first inert gas supply unit and the second inert gas supply unit so that the first inert gas is supplied from the first inert gas supply unit to the exhaust gas treatment chamber during the period in which the treatment gas is treated in the exhaust gas treatment chamber, and the second inert gas is supplied from the second inert gas supply unit to the exhaust gas treatment chamber when the treatment in the exhaust gas treatment chamber is stopped, The control unit is configured to calculate flow rate data of the second inert gas based on a flow rate of the processing gas supplied by the processing gas supply unit.

8. The substrate processing device according to claim 7, characterized in that: The control unit is configured to be able to set a flow rate of a flow rate adjustment unit that adjusts the flow rate of the second inert gas based on the flow rate data of the second inert gas.

9. The substrate processing device according to claim 7, characterized in that: The substrate processing device comprises: an input-output device, which inputs and outputs data, The control unit is configured to be capable of transmitting a message corresponding to the flow rate data of the second inert gas to the input / output device.

10. A substrate processing device, characterized in that: have: A reaction tube that accommodates the substrate; a processing gas supply unit for supplying processing gas into the reaction tube; An exhaust part, which exhausts the processing gas in the reaction tube; An exhaust gas treatment chamber connected to the exhaust portion for treating the exhausted treatment gas; a first inert gas supply unit connected to an inert gas supply source for supplying a first inert gas into the reaction tube, and supplying the first inert gas to the exhaust gas treatment chamber; a second inert gas supply unit for supplying a second inert gas to the exhaust gas treatment chamber; an exhaust pipe for exhausting the gas in the exhaust gas treatment chamber; and a control unit configured to control the first inert gas supply unit and the second inert gas supply unit so that the first inert gas is supplied from the first inert gas supply unit to the exhaust gas treatment chamber during the period in which the treatment gas is treated in the exhaust gas treatment chamber, and the second inert gas is supplied from the second inert gas supply unit to the exhaust gas treatment chamber when the treatment in the exhaust gas treatment chamber is stopped, The control unit is configured to calculate flow rate data of the second inert gas based on a flow rate of the process gas supplied by the process gas supply unit and characteristic data of the process gas.

11. A substrate processing method, characterized in that: It has the following processes: Step a of placing the substrate in a reaction tube; Step b of supplying a processing gas into the reaction tube; Step c: exhausting the processing gas in the reaction tube; Step d of supplying the discharged treated gas to an exhaust gas treatment chamber; Step e) of treating the treatment gas in the exhaust gas treatment chamber; a step f of supplying a first inert gas into the reaction tube and the exhaust gas treatment chamber at least during the step e; as well as After the step e is stopped, a step g is performed of supplying the second inert gas whose flow rate is adjusted by a flow rate adjustment unit to a preset flow rate to the exhaust gas treatment chamber.

12. A method for manufacturing a semiconductor device, characterized in that: It has the following processes: Step a of placing the substrate in a reaction tube; Step b of supplying a processing gas into the reaction tube; Step c: exhausting the processing gas in the reaction tube; Step d of supplying the discharged treated gas to an exhaust gas treatment chamber; Step e) of treating the treatment gas in the exhaust gas treatment chamber; a step f of supplying a first inert gas into the reaction tube and the exhaust gas treatment chamber at least during the step e; as well as After the step e is stopped, a step g is performed of supplying the second inert gas whose flow rate is adjusted by a flow rate adjustment unit to a preset flow rate to the exhaust gas treatment chamber.

13. A computer-readable recording medium having a program recorded thereon, characterized in that: The program causes the substrate processing apparatus to execute the following steps through a computer: Step a of placing the substrate in a reaction tube; Step b of supplying a processing gas into the reaction tube; Step c: discharging the processing gas in the reaction tube; Step d of supplying the exhausted treated gas to an exhaust gas treatment chamber; Step e) of treating the treatment gas in the exhaust gas treatment chamber; f) supplying a first inert gas into the reaction tube and the exhaust gas treatment chamber at least during the step e; as well as g) supplying the second inert gas whose flow rate is adjusted by a flow rate adjustment unit adjusted to a preset flow rate to the exhaust gas treatment chamber after stopping the step e.

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