Solid-state imaging device

Abstract

A solid-state imaging device is provided. The solid-state imaging device includes a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer, which is disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state imaging device also includes a partition grid, which is disposed between the color filter segments. In addition, the solid-state imaging device includes a patterned structure, which is disposed above the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state imaging device also includes a transparent layer, which is disposed above the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one of the patterned segments is disposed above the partition grid.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to an imaging device, and more particularly to a solid-state imaging device capable of reducing petal flare. Background Art

[0002] Solid-state imaging devices (e.g., charge-coupled device (CCD) imaging devices, complementary metal-oxide semiconductor (CMOS) imaging devices, etc.) have been widely used in various image capturing devices, such as digital still cameras, digital video cameras, and similar devices. A light sensing portion in the solid-state imaging device may be formed at each of a plurality of pixels, and a signal charge may be generated according to the amount of light received in the light sensing portion. In addition, the signal charge generated in the light sensing portion may be transmitted and amplified to obtain an image signal.

[0003] In solid-state imaging devices, a separation grid can be used to separate different color filter layers. However, due to the same separation grid period, grating diffraction problems are prone to occur, which may cause the obtained image to have dispersion (spots) and ghosting. Therefore, the design and manufacture of solid-state imaging devices still have various challenges. Summary of the invention

[0004] In some embodiments of the present disclosure, a solid-state imaging device includes a patterned structure having a plurality of patterned sections, which can prevent diffraction generated by a separation grid, thereby improving the quality of an image signal from a photoelectric conversion element of the solid-state imaging device.

[0005] According to some embodiments of the present disclosure, a solid-state imaging device is provided. The solid-state imaging device includes a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer, which is disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state imaging device also includes a partition grid, which is disposed between the color filter segments. In addition, the solid-state imaging device includes a patterned structure, which is disposed above the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state imaging device also includes a transparent layer, which is disposed above the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one of the patterned segments is disposed above the partition grid.

[0006] In some embodiments, the refractive index of the patterned structure is lower than the refractive index of the transparent layer.

[0007] In some embodiments, the refractive index of the patterned structure is between 1.2 and 1.65.

[0008] In some embodiments, the thickness of each of the patterned segments is less than or equal to the thickness of the transparent layer.

[0009] In some embodiments, one of the patterned segments is disposed above one of the color filter segments.

[0010] In some embodiments, at least two of the patterned segments are disposed above one of the color filter segments.

[0011] In some embodiments, in a cross-sectional view of a solid-state imaging device, a partitioning grid is divided into a plurality of partitioning grid segments, a distance between two adjacent partitioning grid segments defines a pixel size, and a ratio of a width of each of the patterned segments to the pixel size is less than 0.5.

[0012] In some embodiments, the solid-state imaging device further comprises a metal grid disposed between the color filter segments, and the separation grid covers at least a portion of the metal grid.

[0013] In some embodiments, the solid-state imaging device further includes a plurality of light-condensing structures disposed on the transparent layer.

[0014] In some embodiments, the material of each of the light-concentrating structures is the same as the material of the transparent layer.

[0015] In some embodiments, each of the light focusing structures corresponds to one of the color filter segments.

[0016] In some embodiments, each of the light focusing structures corresponds to at least two of the color filter segments.

[0017] In some embodiments, in a top view of the solid-state imaging device, the patterned segments form a plurality of patterned arrays.

[0018] In some embodiments, the patterned array corresponds to two of the color filter segments that are arranged adjacent to each other.

[0019] In some embodiments, the patterned array corresponds to two diagonally arranged color filter segments among the color filter segments.

[0020] In some embodiments, each of the patterned arrays includes x 2 patterned sections, and x is an integer greater than or equal to 3.

[0021] In some embodiments, in a cross-sectional view of the solid-state imaging device, each of the patterned sections is formed in a triangle, a rectangle, a trapezoid, or a semicircle.

[0022] In some embodiments, each of the color filter segments corresponds to one of the photoelectric conversion elements.

[0023] In some embodiments, each of the color filter segments corresponds to at least two of the photoelectric conversion elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The following will be described in detail with reference to the accompanying drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustration. In fact, the size of the components may be enlarged or reduced to clearly show the technical features of the embodiments of the present disclosure.

[0025] Figures 1A to 1E are partial cross-sectional views illustrating various stages of manufacturing a solid-state imaging device according to some embodiments of the present disclosure.

[0026] Figure 2 FIG. 4 is a partial top view of a solid-state imaging device according to an embodiment of the present disclosure.

[0027] Figure 3 is a partial cross-sectional view of a solid-state imaging device according to another embodiment of the present disclosure.

[0028] FIG. 4A to FIG. 4E FIG. 4 is a partial top view of a solid-state imaging device according to different embodiments of the present disclosure.

[0029] FIG. 5A to FIG. 5C is a partial cross-sectional view of a solid-state imaging device according to different embodiments of the present disclosure.

[0030] The reference numerals are described as follows:

[0031] 10, 12, 14, 16, 18, 20, 22, 24, 26, 28: Solid-state imaging devices

[0032] 101: Semiconductor substrate

[0033] 101B: Back surface

[0034] 101F: Front surface

[0035] 103, 103': Photoelectric conversion element

[0036] 105: Wiring layer

[0037] 107: High dielectric constant film

[0038] 109: Buffer layer

[0039] 111: Metal Grid

[0040] 115: Color filter layer

[0041] 115S: Color filter section

[0042] 115SG: Green filter segment

[0043] 115SR: Red filter segment

[0044] 121: Divider Grid

[0045] 121S: Separate grid sections

[0046] 125: Patterned Structure

[0047] 125S: Patterned section

[0048] 127: Transparent layer

[0049] 127T: Top surface

[0050] 129: Focusing structure

[0051] AR, AR1, AR2, AR3, AR4, AR5: Patterned Array

[0052] PW: Pixel size

[0053] T1: Thickness of patterned structure

[0054] T2: Thickness of the transparent layer

[0055] W: Width

[0056] A-A', B-B': hatching DETAILED DESCRIPTION

[0057] The following disclosure provides many different embodiments or examples to implement the different features of the present invention. The following disclosure describes specific examples of various components and their arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the present disclosure describes an embodiment in which a first characteristic component is formed on or above a second characteristic component, it means that it may include an embodiment in which the first characteristic component and the second characteristic component are in direct contact, and may also include an embodiment in which an additional characteristic component is formed between the first characteristic component and the second characteristic component, so that the first characteristic component and the second characteristic component may not be in direct contact.

[0058] It should be understood that additional operating steps may be implemented before, during or after the method, and in other embodiments of the method, some operating steps may be replaced or omitted.

[0059] In addition, spatially related terms such as "below", "below", "lower", "above", "above", "higher" and similar terms may be used. These spatially related terms are used to facilitate the description of the relationship between one (some) elements or features and another (some) elements or features in the drawings. These spatially related terms include different orientations of the device in use or operation, as well as the orientations described in the drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially related adjectives used therein will also be interpreted according to the turned orientation.

[0060] In the specification, the terms "about", "approximately" and "generally" generally mean within 20%, within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The numbers given here are approximate numbers, that is, in the absence of specific description of "about", "approximately" and "generally", the meanings of "about", "approximately" and "generally" can still be implied.

[0061] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those commonly understood by those skilled in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

[0062] The different embodiments disclosed below may repeatedly use the same reference symbols and / or marks. These repetitions are for the purpose of simplicity and clarity, and are not intended to limit the specific relationship between the different embodiments and / or structures discussed.

[0063] According to the direction of light incident on the light receiving unit, solid-state imaging devices can be roughly divided into two types, one is a front-side illuminated (FSI) imaging device, which receives light incident on the front side of the semiconductor substrate, and a wiring layer of a reading circuit is formed on the front side of the semiconductor substrate. The other is a back-side illuminated (BSI) imaging device, which receives light incident on the back side of the semiconductor substrate, and no wiring layer is formed on the back side of the semiconductor substrate. In order to image a color image, a color filter layer is provided in the FSI and BSI imaging devices. The FSI and BSI imaging devices usually have a separation grid, which is used to separate the light of the color filter layer to prevent color mixing.

[0064] Figures 1A to 1E1 is a partial cross-sectional view illustrating various stages of manufacturing a solid-state imaging device 10 according to some embodiments of the present disclosure. It should be noted that for simplicity, Figures 1A to 1E Some components of the solid-state imaging device 10 may be omitted.

[0065] Reference Figure 1A A semiconductor substrate 101 is provided, and the semiconductor substrate 101 is, for example, a wafer or a chip. The semiconductor substrate 101 has a front surface 101F and a back surface 101B opposite to the front surface 101F. A plurality of photoelectric conversion elements 103 (for example, photodiodes) may be formed in the semiconductor substrate 101.

[0066] In some embodiments, the photoelectric conversion elements 103 in the semiconductor substrate 101 may be isolated from each other via an isolation structure (not shown), such as a shallow trench isolation (STI) region or a deep trench isolation (DTI) region. The isolation structure may be formed by forming a trench in the semiconductor substrate 101 using an etching process and filling the trench with an insulating or dielectric material.

[0067] like Figure 1A As shown, in some embodiments, the photoelectric conversion element 103 is formed on the back surface 101B of the semiconductor substrate 101, and the wiring layer 105 is formed on the front surface 101F of the semiconductor substrate 101, but the embodiments of the present disclosure are not limited thereto. The wiring layer 105 may be an internal connection structure, which includes a plurality of wires and vias buried in a plurality of dielectric layers, and the wiring layer 105 may further include various circuits required by the solid-state imaging device 10. Incident light may be irradiated to the side of the back surface 101B and received by the photoelectric conversion element 103.

[0068] like Figure 1AAs shown, in some embodiments, a high-k film 107 may be formed on the back surface 101B of the semiconductor substrate 101, and the high-k film 107 covers the photoelectric conversion element 103. The material of the high-k film 107 may include hafnium oxide (HfO2), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), tantalum pentoxide (Ta2O5), other suitable high-k materials or combinations thereof, but the embodiments of the present disclosure are not limited thereto. The high-k film 107 may be formed by a deposition process. The deposition process is, for example, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD) or other deposition techniques. The high-k film 107 may have a high refractive index and light absorption capability.

[0069] like Figure 1A As shown, in some embodiments, a buffer layer 109 may be formed on the high dielectric constant film 107. The material of the buffer layer 109 may include silicon oxide, silicon nitride, silicon oxynitride, other suitable insulating materials or combinations thereof, but the embodiments of the present disclosure are not limited thereto. The buffer layer 109 may be formed by a deposition process. The deposition process may be, for example, spin coating, chemical vapor deposition, flowable chemical vapor deposition (FCVD), plasma enhanced chemical vapor deposition, physical vapor deposition (PVD) or other deposition techniques.

[0070] Reference Figure 1B , a metal grid 111 may be formed on the semiconductor substrate 101. Specifically, the metal grid 111 is formed on the buffer layer 109. In some embodiments, the material of the metal grid 111 may include tungsten (W), aluminum (Al), metal nitride (e.g., titanium nitride (TiN)), other suitable materials or combinations thereof, but the embodiments of the present disclosure are not limited thereto. The metal grid 111 may be formed by depositing a metal layer on the buffer layer 109 and then patterning the metal layer using photolithography and etching processes, but the embodiments of the present disclosure are not limited thereto.

[0071] Reference Figure 1B, forming a separation grid 121 on the semiconductor substrate 101. Specifically, the separation grid 121 is formed corresponding to the metal grid 111, so that the separation grid 121 can cover at least a portion of the metal grid 111. In some embodiments, the material of the separation grid 121 may include a transparent dielectric material having a refractive index in the range of about 1.0 to about 1.99, but the embodiments of the present disclosure are not limited thereto. The separation grid 121 may be formed by depositing a transparent dielectric layer on the buffer layer 109 and then patterning the transparent dielectric layer using a photolithography and etching process, but the embodiments of the present disclosure are not limited thereto.

[0072] Reference Figure 1C A color filter layer 115 is formed above the semiconductor substrate 101. Specifically, the color filter layer 115 is formed above the photoelectric conversion element 103 (ie, the color filter layer 115 is formed corresponding to the photoelectric conversion element 103). Figure 1C As shown, the color filter layer 115 may have a plurality of color filter segments 115S. The color filter segments 115S may correspond to the same color or different colors. Figure 1C In the embodiment of the present invention, one of the color filter segments 115S may be a red filter segment (i.e., a red filter segment 115SR), and another of the color filter segments 115S may be a green filter segment (i.e., a green filter segment 115SG), but the embodiment of the present disclosure is not limited thereto. In some other embodiments, the color filter segment 115S may include a blue filter segment, a white filter segment, etc.

[0073] like Figure 1C As shown, the metal grid 111 and the separation grid 121 are disposed between the color filter segments 115S. That is, the metal grid 111 and the separation grid 121 can be formed to separate the color filter segments 115S from each other, but the embodiment of the disclosure is not limited thereto. Figure 1C In the illustrated embodiment, each color filter segment 115S corresponds to one photoelectric conversion element 103, but the present disclosure is not limited thereto. In some other embodiments, each color filter segment 115S may correspond to at least two photoelectric conversion elements 103 (eg, four (2×2) photoelectric conversion elements 103).

[0074] Reference Figure 1D, a patterned structure 125 is formed on the color filter layer 115. Specifically, the patterned structure 125 is formed on both the color filter layer 115 and the separation grid 121, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the material of the patterned structure 125 may be the same as or similar to the material of the separation grid 121. For example, the material of the patterned structure 125 may include a transparent dielectric material having a refractive index in the range of about 1.0 to about 1.99, but the embodiments of the present disclosure are not limited thereto. The patterned structure 125 may be formed by depositing a transparent dielectric layer on both the color filter layer 115 and the separation grid 121, and then patterning the transparent dielectric layer using a photolithography and etching process, but the embodiments of the present disclosure are not limited thereto.

[0075] like Figure 1D As shown, the patterned structure 125 may have a plurality of patterned sections 125S. In an embodiment of the present disclosure, at least one of the patterned sections 125S is disposed on the separation grid 121. Figure 1D In the illustrated embodiment, some patterned segments 125S are disposed on the color filter segments 115S (including the red filter segments 115SR and the green filter segments 115SG), but the disclosed embodiment is not limited thereto. In some other embodiments, no patterned segments are disposed on the color filter segments 115S.

[0076] In addition, Figure 1D In the illustrated embodiment, one patterned segment 125S is disposed on one color filter segment 115S (e.g., the red filter segment 115SR or the green filter segment 115SG), but the disclosed embodiment is not limited thereto. In some other embodiments, at least two (i.e., two or more) patterned segments 125S may be disposed on one color filter segment 115S.

[0077] Reference Figure 1E , a transparent layer 127 is formed on the color filter layer 115 and the partition grid 121 to form the solid-state imaging device 10. Specifically, as Figure 1E As shown, the transparent layer 127 surrounds the patterned segments 125S. That is, the transparent layer 127 can fill the space between the patterned segments 125S. In some embodiments, the transparent layer 127 can be an organic layer, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the material of the transparent layer 127 can include glass, epoxy resin, silicone resin, polyurethane, other suitable materials or combinations thereof, but the embodiments of the present disclosure are not limited thereto. The transparent layer 127 can be formed by a deposition process. Examples of the deposition process are described above and will not be repeated here.

[0078] In the embodiment of the present disclosure, the refractive index of the patterned structure 125 is lower than the refractive index of the transparent layer 127. For example, the refractive index of the patterned structure 125 may be in the range of about 1.2 to about 1.65, but the embodiment of the present disclosure is not limited thereto.

[0079] In some embodiments, Figure 1E As shown, the thickness T1 of the patterned structure 125 (i.e., the thickness of each patterned segment 125S) is less than or equal to the thickness T2 of the transparent layer 127. In addition, the transparent layer 127 may have a substantially flat top surface 127T. That is, the transparent layer 127 may be referred to as a flat layer of the patterned structure 125, but the embodiments of the present disclosure are not limited thereto.

[0080] In some embodiments, Figure 1E As shown, in the cross-sectional view of the solid-state imaging device 10, the partitioning grid 121 can be divided into a plurality of partitioning grid segments 121S. The distance between two adjacent partitioning grid segments 121S (the distance between the central axes of two adjacent partitioning grid segments 121S) defines a pixel size PW. In addition, the plurality of patterned segments 125S may have the same width W. In some embodiments, the ratio of the width W of each patterned segment to the pixel size PW may be less than 0.5.

[0081] In some embodiments, the solid-state imaging device 10 may be a complementary metal oxide semiconductor (CMOS) imaging device or a charge coupled device (CCD) imaging device, but the embodiments of the present disclosure are not limited thereto.

[0082] Figure 1E The solid-state imaging device 10 shown may be referred to as a back-illuminated (BSI) imaging device, but the disclosed embodiments are not limited thereto. In some other embodiments, the solid-state imaging device may be a front-illuminated (FSI) imaging device. For an FSI imaging device, Figure 1E The semiconductor substrate 101 and wiring layer 105 shown may be turned upside down. In the FSI imaging device, incident light is irradiated to the side of the front surface 101F, passes through the wiring layer 105, and then is received by the photoelectric conversion element 103 formed on the back surface 101B of the semiconductor substrate 101.

[0083] Figure 2 FIG. 1 is a partial top view of a solid-state imaging device 10 according to an embodiment of the present disclosure. For example, Figure 1E Can be along Figure 2 It should be noted that in order to more clearly show the patterned structure 125, Figure 2 The transparent layer 127 is omitted.

[0084] Reference Figure 1E and Figure 2 , the solid-state imaging device 10 includes a plurality of photoelectric conversion elements 103. The solid-state imaging device 10 also includes a color filter layer 115, which is disposed above the photoelectric conversion element 103. The color filter layer 115 has a plurality of color filter segments 115S. The solid-state imaging device 10 further includes a partition grid 121, which is disposed between the color filter segments 115S. In addition, the solid-state imaging device 10 includes a patterned structure 125, which is disposed above the color filter layer 115. The patterned structure 125 has a plurality of patterned segments 125S. The solid-state imaging device 10 also includes a transparent layer 127, which is disposed above the color filter layer 115 and the partition grid 121. The transparent layer 127 surrounds the patterned segments 125S. At least one of the patterned segments is disposed above the partition grid 121.

[0085] According to an embodiment of the present disclosure, the solid-state imaging device 10 includes a plurality of patterned segments 125S and a transparent layer 127 surrounding the patterned segments 125S, and the refractive index of the patterned segments 125S is lower than the refractive index of the transparent layer 127. This can prevent the partition grid 121 from generating diffraction, thereby improving the quality of the image signal from the photoelectric conversion element 103 of the solid-state imaging device 10.

[0086] Figure 3 is a partial cross-sectional view of a solid-state imaging device 12 according to another embodiment of the present disclosure. Similarly, for simplicity, Figure 3 Some components of the solid-state imaging device 12 may be omitted.

[0087] Figure 3 The solid-state imaging device 12 shown has Figure 1E The solid-state imaging device 10 shown in FIG. Figure 1E Differences of the solid-state imaging device 10 shown may include: Figure 3The solid-state imaging device 12 shown may further include a plurality of light-concentrating structures 129, which are disposed on the transparent layer 127. In some embodiments, the light-concentrating structures 129 may be used to converge incident light. In some embodiments, the material of the light-concentrating structures 129 may be the same as or similar to the material of the transparent layer 127. For example, the material of the light-concentrating structures 129 may include glass, epoxy resin, silicone resin, polyurethane, other suitable materials or a combination thereof, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the light-concentrating structures 129 may be formed by a photoresist reflow method, a hot embossing method, other suitable methods or a combination thereof. In some embodiments, the step of forming the light-concentrating structures 129 may include a spin coating process, a lithography process, an etching process, other suitable processes or a combination thereof, but the embodiments of the present disclosure are not limited thereto.

[0088] In some embodiments, the focusing structure 129 may be a micro-lens structure, such as a semi-convex lens or a convex lens, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the focusing structure 129 may be a micro-pyramid structure (e.g., a cone, a quadrangular pyramid, etc.) or a micro-trapezoidal structure (e.g., a flat-topped cone, a flat-topped quadrangular pyramid, etc.). Alternatively, the focusing structure 129 may be a gradient-index structure.

[0089] exist Figure 3 In the illustrated embodiment, each light-concentrating structure 129 corresponds to one color filter segment 115S. For example, one light-concentrating structure 129 corresponds to the red filter segment 115SR, and another light-concentrating structure 129 corresponds to the green filter segment 115SG, but the disclosed embodiment is not limited thereto. In some other embodiments, each light-concentrating structure 129 may correspond to at least two color filter segments 115S.

[0090] and Figure 1E Differences of the solid-state imaging device 10 shown may also include: Figure 3 Each color filter segment 115S in corresponds to at least two photoelectric conversion elements 103' (for example, two (2×1) or four (2×2) photoelectric conversion elements 103'), but the embodiment of the present disclosure is not limited thereto. Figure 3 In the embodiment shown, each light-concentrating structure 129 corresponds to at least two photoelectric conversion elements 103', but the embodiment disclosed is not limited thereto. The number of photoelectric conversion elements 103' corresponding to each color filter segment 115S or each light-concentrating structure 129 can be adjusted according to actual needs.

[0091] In addition, a partial top view of the solid-state imaging device 12 may also be Figure 2 The partial top view of the solid-state imaging device 10 shown is similar. Figure 2 In the top view of the solid-state imaging device 10, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 2 As shown, the patterned array AR may correspond to four color filter segments 115S arranged adjacent to each other along the X direction or the Y direction, and each patterned array AR may include nine patterned segments 125S, but the embodiment of the present disclosure is not limited thereto.

[0092] FIG. 4A to FIG. 4E Partial top views of a solid-state imaging device 14 , a solid-state imaging device 16 , a solid-state imaging device 18 , a solid-state imaging device 20 , and a solid-state imaging device 22 are respectively illustrated according to different embodiments of the present disclosure.

[0093] Reference Figure 4A In the top view of the solid-state imaging device 14, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 4A As shown, each patterned array AR may include nine patterned segments 125S, but the embodiment of the present disclosure is not limited thereto. In addition, the patterned array AR may correspond to two color filter segments 115S arranged adjacent to each other along the X direction (e.g., patterned array AR2 and patterned array AR3), or to two color filter segments 115S arranged diagonally (e.g., patterned array AR1 and patterned array AR2).

[0094] Reference Figure 4B In the top view of the solid-state imaging device 16, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 4B As shown, each patterned array AR may include nine patterned segments 125S, but the present disclosure is not limited thereto. In addition, the patterned array AR may correspond to two diagonally arranged color filter segments 115S (eg, patterned array AR1 and patterned array AR2).

[0095] Reference Figure 4C In the top view of the solid-state imaging device 18, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 4C As shown, each patterned array AR may include nine patterned segments 125S, but the present disclosure is not limited thereto. In addition, the patterned array AR may correspond to two color filter segments 115S (eg, patterned array AR1 and patterned array AR4) arranged adjacent to each other along the Y direction.

[0096] Reference Figure 4DIn the top view of the solid-state imaging device 20, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 4D As shown, each patterned array AR may include nine patterned segments 125S, but the embodiment of the present disclosure is not limited thereto. In addition, the patterned array AR may correspond to two color filter segments 115S arranged adjacent to each other along the Y direction (e.g., patterned array AR1 and patterned array AR4), or to two color filter segments 115S arranged diagonally (e.g., patterned array AR4 and patterned array AR5).

[0097] Reference Figure 4E In the top view of the solid-state imaging device 22, the patterned sections 125S may form a plurality of patterned arrays AR. Figure 4E As shown, each patterned array AR may include sixteen patterned segments 125S, but the present disclosure is not limited thereto. In addition, the patterned array AR may correspond to the color filter segments 115S arranged adjacent to each other along the X direction and the Y direction.

[0098] The number of patterned segments 125S in each patterned array AR is not limited to the aforementioned embodiment. In some embodiments, each patterned array AR may include x 2 The number of patterned segments 125S is variable (different from each other), and x is an integer greater than or equal to 3, but the embodiment of the present disclosure is not limited thereto. In addition, the number of patterned segments 125S in each patterned array AR may be variable (different from each other).

[0099] Furthermore, in the cross-sectional view of the solid-state imaging device of the aforementioned embodiment, each patterned section 125S is depicted as a rectangle, but the embodiment of the present disclosure is not limited thereto.

[0100] FIG. 5A to FIG. 5C Partial cross-sectional views of a solid-state imaging device 24 , a solid-state imaging device 26 , and a solid-state imaging device 28 are respectively illustrated according to different embodiments of the present disclosure.

[0101] Reference Figure 5A , in the cross-sectional view of the solid-state imaging device 24, each patterned section 125S is formed in a triangle shape. Figure 5B , in the cross-sectional view of the solid-state imaging device 26, each patterned section 125S is formed into a trapezoidal shape. Figure 5C In the cross-sectional view of the solid-state imaging device 28, each patterned section 125S is formed into a semicircular shape. The shape of each patterned section 125S in the cross-sectional view of the solid-state imaging device is not limited to the aforementioned embodiment, and can be changed according to actual needs.

[0102] In addition, FIG. 5A to FIG. 5CIn the illustrated embodiment, each color filter segment 115S (eg, the green filter segment 115SG or the red filter segment 115SR) or the light-condensing structure 129 may correspond to one photoelectric conversion element 103 , but the embodiments of the present disclosure are not limited thereto.

[0103] In summary, according to the embodiments of the present disclosure, the solid-state imaging device includes a plurality of patterned segments and a transparent layer surrounding the patterned segments, and the refractive index of the patterned segments is lower than the refractive index of the transparent layer. This can prevent the separation grid from generating diffraction, thereby improving the quality of the image signal from the photoelectric conversion element of the solid-state imaging device.

[0104] The above summarizes the components of several embodiments so that those with ordinary knowledge in the technical field to which the present disclosure belongs can better understand the viewpoints of the embodiments of the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs should understand that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purposes and / or advantages as the embodiments introduced herein. Those with ordinary knowledge in the technical field to which the present disclosure belongs should also understand that such equivalent structures do not deviate from the spirit and scope of the present disclosure, and they can make various changes, substitutions and replacements without violating the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be determined by the claims attached hereto. In addition, although the present disclosure has been disclosed as above with several preferred embodiments, it is not intended to limit the present disclosure.

[0105] References throughout this specification to features, advantages, or similar language do not imply that all features and advantages that may be realized using the present disclosure should or may be realized in any single embodiment of the present disclosure. Conversely, language referring to features and advantages is understood to mean that a particular feature, advantage, or characteristic described in conjunction with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of features and advantages and similar language throughout this specification may, but do not necessarily, represent the same embodiment.

[0106] Furthermore, in one or more embodiments, the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will appreciate that the present disclosure may be implemented without one or more specific features or advantages of a particular embodiment. In other cases, additional features and advantages may be identified in certain embodiments, which may not be present in all embodiments of the present disclosure.

Claims

1. A solid-state imaging device, comprising: A plurality of photoelectric conversion elements; a color filter layer, disposed above the photoelectric conversion element and having a plurality of color filter segments; a partition grid disposed between the color filter segments; a patterned structure disposed on the color filter layer and having a plurality of patterned sections; and a transparent layer disposed on the color filter layer and the partition grid and surrounding the patterned segment, At least one of the patterned segments is disposed on the partition grid, the refractive index of the patterned structure is lower than the refractive index of the transparent layer, and in a top view of the solid-state imaging device, the patterned segments form a plurality of arrays, and each of the arrays includes x 2 patterned sections, and x is an integer greater than or equal to 3.

2. The solid-state imaging device according to claim 1, wherein The refractive index of the patterned structure is between 1.2 and 1.65, and the thickness of each of the patterned segments is less than or equal to the thickness of the transparent layer.

3. The solid-state imaging device according to claim 1, wherein An orthographic projection of one of the patterned sections or at least two of the patterned sections on one of the color filter sections overlaps with an orthographic projection of one of the photoelectric conversion elements on one of the color filter sections.

4. The solid-state imaging device according to claim 1, wherein In the cross-sectional view of the solid-state imaging device, the partition grid is divided into a plurality of partition grid segments, the distance between two adjacent partition grid segments defines a pixel size, and the ratio of the width of each of the patterned segments to the pixel size is less than 0.

5.

5. The solid-state imaging device according to claim 1, further comprising: a metal grid disposed between the color filter segments; and A plurality of light-focusing structures are disposed on the transparent layer; The separation grid covers at least a portion of the metal grid.

6. The solid-state imaging device according to claim 5, wherein: Each of the light-concentrating structures corresponds to one of the color filter segments, or each of the light-concentrating structures corresponds to at least two of the color filter segments.

7. The solid-state imaging device according to claim 1, wherein The array corresponds to two color filter segments arranged adjacent to each other among the color filter segments, or the array corresponds to two color filter segments arranged diagonally among the color filter segments.

8. The solid-state imaging device according to claim 1, wherein In the cross-sectional view of the solid-state imaging device, each of the patterned sections is formed in a triangle, a trapezoid, or a semicircle.

9. The solid-state imaging device according to claim 1, wherein Each of the color filter segments corresponds to one of the photoelectric conversion elements, or each of the color filter segments corresponds to at least two of the photoelectric conversion elements.

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