schottky barrier diode

By setting an annular trench and an insulating layer in a gallium oxide-based Schottky barrier diode, the electric field concentration is mitigated, the insulation damage caused by misalignment between the trench and the field insulating layer is solved, and the reverse withstand voltage and leakage current suppression are achieved.

CN114830354BActive Publication Date: 2026-05-05TDK CORP
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Patent Information

Application Number
CN202080087234.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-12-18
Filing Date
2020-10-05
Publication Date
2026-05-05
Estimated Expiration
2040-10-05

AI Technical Summary

Technical Problem

In gallium oxide-based Schottky barrier diodes, misalignment between the trench and the field insulating layer leads to insulation failure, making it difficult to ensure reverse breakdown voltage and leakage current suppression.

Method used

A semiconductor substrate and a drift layer made of gallium oxide are used, with annular outer peripheral trenches and a central trench. An insulating film and a metal film are covered on the drift layer. The field insulating layer is arranged in a ring and extends into the trench. The metal film has the same potential as the anode electrode, which mitigates the concentration of the electric field.

Benefits of technology

It effectively prevents insulation failure, suppresses leakage current, improves reverse withstand voltage, and ensures device reliability.

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Abstract

The present application has an object to prevent insulation breakdown caused by misalignment of a trench and a field insulation layer in a Schottky barrier diode of gallium oxide. The Schottky barrier diode includes an anode electrode (40) in Schottky contact with a drift layer (30), a cathode electrode (50) in ohmic contact with a semiconductor substrate (20), an insulation film (63) covering an inner wall of a trench (61) provided in the drift layer (30), a metal film (64) covering the inner wall of the trench (61) through the insulation film (63) and electrically connected to the anode electrode (40), and a field insulation layer (70). The field insulation layer (70) includes a first portion (71) between an upper surface (31) of the drift layer (30) and the anode electrode (40) and a second portion (72) covering the inner wall of the trench (61) through the metal film (64) and the insulation film (63). Thus, even if the alignment of the trench (61) and the field insulation layer (70) is misaligned, insulation breakdown does not occur.
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