Vibration test method and system for semiconductor temperature control device

Abstract

The present application relates to the technical field of semiconductor, in particular to a kind of semiconductor temperature control equipment vibration test method and system, semiconductor temperature control equipment vibration test method includes: make semiconductor temperature control equipment run to be tested operating condition;Obtain the vibration acceleration data of the compressor of semiconductor temperature control equipment, and the time domain speed data and frequency data of the point to be measured of the pipeline of semiconductor temperature control equipment;According to the time domain speed data and frequency data of point to be measured, obtain risk frequency;According to vibration acceleration data and the time domain speed data of point to be measured, obtain the vibration mode of point to be measured under each cycle frequency;According to risk frequency and the vibration mode of point to be measured, obtain the vibration mode of pipeline under risk frequency.The vibration data of semiconductor temperature control equipment in operation is collected by the vibration test system of semiconductor temperature control equipment, so as to obtain the vibration response of key important structure such as pipeline, and then through vibration response detection, vibration risk in equipment can be fed back, ensure that equipment is safe and stable operation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a vibration testing method and system for semiconductor temperature control equipment. Background Technology

[0002] Semiconductor temperature control equipment contains vibration excitation sources such as compressors and pumps. During operation, the pipes, machine frame and other structures are subjected to continuous vibration excitation, which may cause problems such as loose assembly and cracked pipes. In severe cases, it may lead to leakage of the contents of the pipes, endangering production safety.

[0003] However, semiconductor temperature control equipment presents the following challenges compared to other vibrating objects being tested: ① The tested pipe has a wide operating temperature range; ② The tested pipe is small in size and lightweight; ③ The tested pipe, compressor, etc., are wrapped with insulation cotton; ④ The internal structure of the equipment is compact, and there is little space to arrange the vibration testing equipment.

[0004] Currently, commonly used vibration testing equipment can be divided into two main categories: contact and non-contact. Contact testing equipment primarily uses accelerometers, which need to be mounted on the object being tested. This characteristic (③) makes installation difficult, and characteristics (①) and (②) require the sensor to have a wide operating temperature range and low weight, significantly increasing testing costs. Non-contact testing equipment, taking laser vibrometers as an example, does not require contact with the object being tested, has a wide applicable temperature range, and no added mass, meeting the requirements of characteristics (①②③). However, laser vibrometers are large, require a vibration-free installation location, and have special requirements for the installation and testing environment, thus not meeting the requirement of characteristic (④). Summary of the Invention

[0005] This invention provides a vibration testing method and system for semiconductor temperature control equipment, which solves the problems in the prior art where it is difficult to install sensors at the test points of semiconductor temperature control equipment vibration monitoring, and the installation problems can easily lead to high costs and poor monitoring accuracy. The method enables the collection of vibration data of semiconductor temperature control equipment, thereby obtaining the vibration response of key and important structures such as pipelines. By detecting the vibration response, the vibration risk in the equipment can be fed back, ensuring the safe and stable operation of the equipment.

[0006] This invention provides a vibration testing method for semiconductor temperature control equipment, comprising:

[0007] S100 enables the semiconductor temperature control equipment to operate under the conditions to be tested;

[0008] S200 acquires vibration acceleration data of the compressor of the semiconductor temperature control equipment, as well as time-domain velocity data and frequency data of the test point of the pipeline of the semiconductor temperature control equipment;

[0009] S300 obtains the risk frequency based on the time-domain velocity and frequency data of the point to be measured;

[0010] S400 obtains the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point;

[0011] S500 obtains the vibration modes of the pipeline at the risk frequency based on the risk frequency and the mode shape of the test point.

[0012] According to the vibration testing method for a semiconductor temperature control device provided by the present invention, step S300 includes:

[0013] S310, obtain the frequency domain displacement data of the point to be measured based on the time domain velocity data and frequency data of the point to be measured;

[0014] S320, if the frequency domain displacement data of the point to be measured is greater than the set target value, then the frequency data corresponding to the frequency domain displacement data of the point to be measured is the risk frequency.

[0015] According to the vibration testing method for a semiconductor temperature control device provided by the present invention, step S310 includes:

[0016] S311, obtain the time-domain displacement data of the point to be measured based on the time-domain velocity data of the point to be measured;

[0017] S312, obtain the frequency domain displacement data of the point to be measured based on the time domain displacement data and frequency data of the point to be measured.

[0018] According to the vibration testing method for a semiconductor temperature control device provided by the present invention, step S400 includes:

[0019] S410: Based on the vibration acceleration data and the time-domain velocity data of the point to be measured, obtain the phase difference data of the point to be measured;

[0020] S420 obtains the mode shape of the test point at the periodic frequency based on the time-domain displacement data and phase difference data of the test point.

[0021] According to the vibration testing method for a semiconductor temperature control device provided by the present invention, step S410 includes:

[0022] S411, based on the vibration acceleration data, obtain the periodic frequency data and the time difference data of the point to be measured;

[0023] S412 obtains the phase difference data of the test point based on the periodic frequency data and the time difference data of the test point.

[0024] According to the vibration testing method of a semiconductor temperature control device provided by the present invention, a plurality of test points are provided on the pipeline, and the plurality of test points are sequentially and cyclically subjected to steps S200 to S500.

[0025] According to the vibration testing method of a semiconductor temperature control device provided by the present invention, there are multiple test conditions, and the multiple test conditions are sequentially cycled through steps S100 to S500.

[0026] The present invention also provides a vibration testing system for semiconductor temperature control equipment, based on the above-mentioned vibration testing method for semiconductor temperature control equipment, comprising:

[0027] Vibration acceleration sensor, used to acquire vibration acceleration data of the compressor in semiconductor temperature control equipment;

[0028] Laser vibrometers are used to acquire time-domain velocity and frequency data of the test points in the pipes of semiconductor temperature control equipment.

[0029] The data processor is used to obtain the risk frequency based on the time-domain velocity data and frequency data of the test point; to obtain the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point; and to obtain the vibration mode of the pipeline at the risk frequency based on the risk frequency and the mode shape of the test point.

[0030] According to the vibration testing system for semiconductor temperature control equipment provided by the present invention, the vibration acceleration sensor is disposed on the top of the compressor, and the detection direction of the vibration acceleration sensor is along the axial direction of the compressor.

[0031] According to the present invention, a vibration testing system for semiconductor temperature control equipment is provided, wherein the laser vibrometer is set in a vibration-free area outside the semiconductor temperature control equipment, and the laser vibrometer is aimed at the test point of the pipeline.

[0032] The vibration testing method for semiconductor temperature control equipment provided by this invention includes two parts: structural vibration response testing and vibration response data processing. The vibration data of the semiconductor temperature control equipment in operation is collected by the vibration testing system of the semiconductor temperature control equipment to obtain the vibration response of key and important structures such as pipelines. Then, through vibration response detection, the vibration risk in the equipment can be fed back to ensure the safe and stable operation of the equipment.

[0033] The vibration testing method for the semiconductor temperature control equipment of the present invention first starts the semiconductor temperature control equipment and runs it under the test condition to collect vibration acceleration data of the compressor, as well as time-domain velocity data and frequency data of the test points on the pipeline structure; by processing the time-domain velocity data and frequency data of the test points, the risk frequency is obtained; by processing the vibration acceleration data and the time-domain velocity data of the test points, the mode shape of the test points at each period frequency is obtained, and then the mode shape of each test point at the risk frequency is obtained, thereby forming the full-field displacement of the pipeline at the risk frequency, that is, identifying the vibration mode of the pipeline at the risk frequency, which can further analyze the cause of the risk and guide structural optimization.

[0034] In addition to the technical problems solved by the present invention, the technical features of the technical solutions constituted by the present invention, and the advantages brought about by the technical features of these technical solutions as described above, other technical features of the present invention and the advantages brought about by these technical features will be further explained in conjunction with the accompanying drawings, or will be learned through the practice of the present invention. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is one of the flowcharts illustrating the vibration testing method for semiconductor temperature control equipment provided by the present invention;

[0037] Figure 2 This is the second flowchart illustrating the vibration testing method for semiconductor temperature control equipment provided by the present invention;

[0038] Figure 3 This is a schematic diagram of the phase change of the vibration testing method for semiconductor temperature control equipment provided by the present invention;

[0039] Figure 4 This is a schematic diagram of the structure of the vibration testing system for semiconductor temperature control equipment provided by the present invention;

[0040] Figure label:

[0041] 100. Vibration acceleration sensor; 200. Compressor; 300. Data acquisition equipment; 400. Data processor; 500. Pipeline; 600. Laser vibration meter. Detailed Implementation

[0042] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of the invention.

[0043] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0044] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0045] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0046] Furthermore, in the description of the embodiments of the present invention, unless otherwise stated, "multiple", "multiple roots", and "multiple groups" mean two or more, and "several", "several roots", and "several groups" mean one or more.

[0047] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0048] like Figure 1 and Figure 2 As shown, the vibration testing method for a semiconductor temperature control device provided in this embodiment of the invention includes:

[0049] S100 enables the semiconductor temperature control equipment to operate under the conditions to be tested;

[0050] S200 acquires vibration acceleration data of the compressor of the semiconductor temperature control equipment, as well as time-domain velocity data and frequency data of the test point of the pipeline of the semiconductor temperature control equipment;

[0051] S300 obtains the risk frequency based on the time-domain velocity and frequency data of the point to be measured;

[0052] S400 obtains the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point;

[0053] S500 obtains the vibration modes of the pipeline at the risk frequency based on the risk frequency and the mode shape of the test point.

[0054] The vibration testing method for semiconductor temperature control equipment according to this invention includes two parts: structural vibration response testing and vibration response data processing. The vibration data of the semiconductor temperature control equipment in operation is collected by the vibration testing system of the semiconductor temperature control equipment to obtain the vibration response of key and important structures such as pipelines. Then, through vibration response detection, the vibration risk in the equipment can be fed back to ensure the safe and stable operation of the equipment.

[0055] The vibration testing method for the semiconductor temperature control equipment of the present invention first starts the semiconductor temperature control equipment and runs it under the test condition to collect vibration acceleration data of the compressor, as well as time-domain velocity data and frequency data of the test points on the pipeline structure; by processing the time-domain velocity data and frequency data of the test points, the risk frequency is obtained; by processing the vibration acceleration data and the time-domain velocity data of the test points, the mode shape of the test points at each period frequency is obtained, and then the mode shape of each test point at the risk frequency is obtained, thereby forming the full-field displacement of the pipeline at the risk frequency, that is, identifying the vibration mode of the pipeline at the risk frequency, which can further analyze the cause of the risk and guide structural optimization.

[0056] In this embodiment, the period refers to the time period during which data acquisition of all test points is completed under a single operating condition.

[0057] According to an embodiment of the present invention, step S300 includes:

[0058] S310, obtain the frequency domain displacement data of the point to be measured based on the time domain velocity data and frequency data of the point to be measured;

[0059] S320, if the frequency domain displacement data of the point to be measured is greater than the set target value, then the frequency data corresponding to the frequency domain displacement data of the point to be measured is the risk frequency.

[0060] In this embodiment, for a single test point, the original acquired signal is a time-domain signal, which can be converted into a frequency-domain signal through signal processing methods such as Fourier transform. After acquiring the time-domain velocity data and frequency data of the test point in the pipeline of the semiconductor temperature control equipment, the time-domain velocity data and frequency data of the test point are processed into frequency-domain displacement data of the test point through software programs or calculation methods, that is, the peak displacement of the test point at each frequency, which is denoted as "peak displacement". The peak displacement of the test point is compared with the set target value to determine whether the peak displacement of the test point is greater than the set target value. The frequency data with peak displacement higher than the set target value is identified and denoted as "risk frequency". At the same time, based on the vibration acceleration data and the time-domain velocity data of the test point, the vibration mode of the test point at each period frequency is obtained. Finally, based on the risk frequency and the vibration mode of the test point, the vibration mode of the pipeline at the risk frequency is obtained.

[0061] According to an embodiment of the present invention, step S310 includes:

[0062] S311, obtain the time-domain displacement data of the point to be measured based on the time-domain velocity data of the point to be measured;

[0063] S312, obtain the frequency domain displacement data of the point to be measured based on the time domain displacement data and frequency data of the point to be measured.

[0064] In this embodiment, after acquiring the time-domain velocity data and frequency data of the test point of the pipeline of the semiconductor temperature control device, the time-domain velocity data of the test point is processed by filtering, integration and other signal processing to obtain the time-domain displacement data of the test point. Then, Fourier transform is performed on the time-domain displacement data of the test point to obtain the frequency-domain displacement data of the test point, that is, the peak displacement of the test point at each frequency, which is denoted as "peak displacement". Then, if the frequency-domain displacement data of the test point is greater than the set target value, that is, the peak displacement is greater than the set target value, then the frequency data corresponding to the frequency-domain displacement data of the test point is the risk frequency.

[0065] According to an embodiment of the present invention, step S400 includes:

[0066] S410: Based on the vibration acceleration data and the time-domain velocity data of the point to be measured, obtain the phase difference data of the point to be measured;

[0067] S420 obtains the mode shape of the test point at the periodic frequency based on the time-domain displacement data and phase difference data of the test point.

[0068] In this embodiment, if the frequency domain displacement data of the test point is determined to be greater than the set target value, then the frequency data corresponding to the frequency domain displacement data of the test point is the risk frequency. At the same time, the phase difference of the vibration data of different test points is corrected using the vibration acceleration data as a reference. Based on the vibration acceleration data of the compressor, the phase difference of the test point is obtained from the time domain velocity data of the test point. The time domain vibration displacement data of the test point is offset according to the phase difference to obtain the time domain vibration displacement of the test point within a single cycle, that is, the mode shape of the test point at the frequency of that cycle, which is denoted as the "full field displacement" at that frequency of that cycle. Finally, the vibration mode of the pipeline at the risk frequency is obtained according to the risk frequency and the mode shape of the test point.

[0069] According to an embodiment of the present invention, step S410 includes:

[0070] S411, based on the vibration acceleration data, obtain the periodic frequency data and the time difference data of the point to be measured;

[0071] S412 obtains the phase difference data of the test point based on the periodic frequency data and the time difference data of the test point.

[0072] In this embodiment, the multi-point, asynchronous vibration response test employed in this invention initially acquires time-domain velocity signals from multiple test points. However, due to the different acquisition times at each test point, a phase difference exists, meaning the peaks and troughs at different test points do not appear simultaneously. This phase difference is not reflected in the... Figure 3 The test data for each test point on the left. By introducing vibration acceleration data as a benchmark, the phase difference between different test points at the same moment can be reflected, such as... Figure 3On the right, the single-point test data is processed into "field data" for all measuring points at a certain moment, so as to better evaluate the vibration response of the pipeline structure. Based on the vibration acceleration data of the compressor, the periodic frequency data and the time difference between multiple test points are identified, and then the phase difference between multiple test points is obtained. The time-domain vibration displacement data of the test points are shifted according to the phase difference to obtain the time-domain vibration displacement of multiple test points within a single cycle, which is denoted as the "full-field displacement" at that frequency.

[0073] According to one embodiment of the present invention, a plurality of test points are provided on the pipeline, and the plurality of test points sequentially and cyclically perform steps S200 to S500. In this embodiment, when the semiconductor temperature control device is operating under a test condition, after the data acquisition of one test point is completed, the laser rangefinder is moved to other test points on the pipeline structure and aligned to perform data acquisition of the test points, that is, to sequentially acquire the time-domain velocity data and frequency data of each test point. This process is repeated until the data of all test points is acquired, and the acquired data is then analyzed and processed.

[0074] According to the vibration testing method for a semiconductor temperature control device provided by the present invention, there are multiple test conditions, and steps S100 to S500 are performed sequentially and cyclically for these multiple test conditions. In this embodiment, when the semiconductor temperature control device is running under one test condition, after completing the data acquisition and analysis of all test points, the semiconductor device runs the next test condition, and similarly, the data acquisition and analysis of all test points under that test condition are completed sequentially according to steps S200 to S500. This process continues until the test points of all test conditions are tested.

[0075] like Figure 4 As shown, this embodiment of the invention also provides a vibration testing system for semiconductor temperature control equipment, and a vibration testing method for semiconductor temperature control equipment based on the above embodiment, comprising:

[0076] Vibration acceleration sensor 100 is used to acquire vibration acceleration data of compressor 200 of semiconductor temperature control equipment;

[0077] The laser vibrometer 600 is used to acquire time-domain velocity and frequency data of the test point in the pipe 500 of the semiconductor temperature control equipment.

[0078] The data processor 400 is used to obtain the risk frequency based on the time-domain velocity data and frequency data of the test point; to obtain the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point; and to obtain the vibration mode of the pipeline 500 at the risk frequency based on the risk frequency and the mode shape of the test point.

[0079] The vibration testing system for semiconductor temperature control equipment in this invention can collect vibration data of operating semiconductor temperature control equipment to obtain the vibration response of key and important structures in pipeline 500. Vibration response detection can provide feedback on vibration risks within the semiconductor temperature control equipment, ensuring its safe and stable operation. This invention uses a vibration acceleration sensor 100 placed on top of the compressor 200 and a single-point laser vibrometer 600 to measure the vibration response of the pipeline 500 structure. Using the vibration acceleration sensor 100 as a reference, the phase difference of vibration data from different test points on the pipeline 500 by the laser vibrometer 600 is corrected. The peak and full-field responses of the structure are obtained through the semiconductor temperature control equipment vibration testing method, evaluating and guiding the structural design and optimization of the semiconductor temperature control equipment.

[0080] This invention combines contact and non-contact measurement to solve the problem of large temperature differences in the testing environment, enabling structural vibration detection of ultra-low temperature semiconductor temperature control equipment. Using at least one vibration acceleration sensor 100 and one laser vibration meter 600, full-field structural vibration response testing can be achieved. It is low-cost, highly operable, and solves the added mass problem of contact measurement methods, maintaining high accuracy even for vibration testing of small pipes 500.

[0081] The vibration acceleration sensor 100 and the laser vibration meter 600 of this invention are both connected to the data acquisition device 300 via signal transmission wires, and then connected to the data processor 400 equipped with data processing software. When performing vibration testing on the semiconductor temperature control equipment, the vibration testing system is first turned on for inspection and preheating.

[0082] According to one embodiment of the present invention, a vibration acceleration sensor 100 is disposed on the top of the compressor 200, and the detection direction of the vibration acceleration sensor 100 is along the axial direction of the compressor 200. In this embodiment, there is one vibration acceleration sensor 100, which is mounted on the top of the compressor 200 by a magnetic base, and the direction of the sensor is vertical, that is, the detection direction is along the axial direction of the compressor 200.

[0083] According to one embodiment of the present invention, a laser vibrometer 600 is disposed in a vibration-free area outside the semiconductor temperature control device, and the laser vibrometer 600 is aligned with the test point of the pipe 500. In this embodiment, there is one laser vibrometer 600, which is mounted on a bracket. The bracket is placed in a stable and vibration-free area outside the semiconductor temperature control device. The laser vibrometer 600 is aligned with one test point of the pipe 500. After data acquisition at the test point is completed, it can be moved to the next test point to continue data acquisition.

[0084] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vibration testing method for a semiconductor temperature control device, characterized in that: include: S100 enables the semiconductor temperature control equipment to operate under the conditions to be tested; S200 acquires vibration acceleration data of the compressor of the semiconductor temperature control equipment, as well as time-domain velocity data and frequency data of the test point of the pipeline of the semiconductor temperature control equipment; S300 obtains the risk frequency based on the time-domain velocity and frequency data of the point to be measured; S400 obtains the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point; S500 obtains the vibration modes of the pipeline at the risk frequency based on the risk frequency and the mode shape of the test point; Step S300 includes: S310, obtain the frequency domain displacement data of the point to be measured based on the time domain velocity data and frequency data of the point to be measured; S320, if the frequency domain displacement data of the point to be measured is greater than the set target value, then the frequency data corresponding to the frequency domain displacement data of the point to be measured is the risk frequency; Step S400 includes: S410: Based on the vibration acceleration data and the time-domain velocity data of the point to be measured, obtain the phase difference data of the point to be measured; S420: Based on the time-domain displacement data and phase difference data of the point to be measured, the mode shape of the point to be measured at the periodic frequency is obtained; The pipeline is provided with multiple test points, and the multiple test points are sequentially cycled through steps S200 to S500.

2. The vibration testing method for semiconductor temperature control equipment according to claim 1, characterized in that: Step S310 includes: S311, obtain the time-domain displacement data of the point to be measured based on the time-domain velocity data of the point to be measured; S312, obtain the frequency domain displacement data of the point to be measured based on the time domain displacement data and frequency data of the point to be measured.

3. The vibration testing method for semiconductor temperature control equipment according to claim 1, characterized in that: Step S410 includes: S411, based on the vibration acceleration data, obtain the periodic frequency data and the time difference data of the point to be measured; S412 obtains the phase difference data of the test point based on the periodic frequency data and the time difference data of the test point.

4. The vibration testing method for semiconductor temperature control equipment according to claim 1, characterized in that: There are multiple test conditions, and the multiple test conditions are sequentially cycled through steps S100 to S500.

5. A vibration testing system for semiconductor temperature control equipment, characterized in that, The vibration testing method for the semiconductor temperature control device according to any one of claims 1 to 4 includes: Vibration acceleration sensor, used to acquire vibration acceleration data of the compressor in semiconductor temperature control equipment; Laser vibrometers are used to acquire time-domain velocity and frequency data of the test points in the pipes of semiconductor temperature control equipment. The data processor is used to obtain the risk frequency based on the time-domain velocity data and frequency data of the test point; to obtain the mode shape of the test point at each period frequency based on the vibration acceleration data and the time-domain velocity data of the test point; and to obtain the vibration mode of the pipeline at the risk frequency based on the risk frequency and the mode shape of the test point.

6. The vibration testing system for semiconductor temperature control equipment according to claim 5, characterized in that: The vibration acceleration sensor is located on the top of the compressor, and the detection direction of the vibration acceleration sensor is along the axial direction of the compressor.

7. The vibration testing system for semiconductor temperature control equipment according to claim 5, characterized in that: The laser vibration meter is set in a vibration-free area outside the semiconductor temperature control equipment, and the laser vibration meter is aimed at the point to be measured on the pipe.

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