LED Display Panel Wiring Structure and Manufacturing Method thereof

Abstract

The present invention relates to the technical field of LED wiring devices, and provides an LED display panel wiring structure and a manufacturing method thereof, including a transparent substrate; a light-transmitting buffer layer covering the transparent substrate; the light-transmitting buffer layer is made of an insulating material; a first conductive pad disposed on the light-transmitting buffer layer; a second conductive pad disposed on the light-transmitting buffer layer; the second conductive pad has a first conductive portion; a light-transmitting insulating adhesive layer laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined adhesive area covering the first conductive portion; a conductive layer laid on the light-transmitting insulating adhesive layer; the conductive layer has a second conductive portion covering the predetermined adhesive area; and a welding portion formed by laser sequentially passing through the transparent substrate and the light-transmitting buffer layer to weld the first conductive portion and the second conductive portion.

Description

Technical Field

[0001] The present invention belongs to the technical field of LED wiring devices, and more specifically, relates to an LED display panel wiring structure and a manufacturing method thereof. Background Art

[0002] LED displays are applied in all aspects of people's lives. LED chips usually need to be installed on a driving substrate with metal lines, and the metal lines on the substrate supply power (or transmit signals) to the LEDs. Usually, the metal line layer on the substrate is fabricated by processes such as physical deposition, evaporation, electroplating, or printing. However, these methods are difficult to fabricate a relatively thick metal layer with a thickness greater than 50 um, resulting in a relatively large resistance of the metal lines themselves and a relatively high manufacturing cost.

[0003] LEDs are current-driven devices, and the metal lines need to provide a relatively large constant current to obtain a good display effect. However, as the length of the power supply trace increases, there is a large voltage drop in the metal lines, resulting in uneven illumination of the LED pixels.

[0004] Therefore, a low-cost and low-resistance LED display panel wiring structure and a manufacturing method thereof are particularly important, especially in the application field of transparent LED displays. Summary of the Invention

[0005] An object of the present invention is to provide an LED display panel wiring structure to solve the technical problem in the prior art that there is a large voltage drop in the LED display panel, which affects the display uniformity.

[0006] To achieve the above object, the technical solution adopted by the present invention is: providing an LED display panel wiring structure including:

[0007] A transparent substrate;

[0008] A light-transmitting buffer layer, covering the transparent substrate;

[0009] A first conductive pad, disposed on the light-transmitting buffer layer;

[0010] A second conductive pad, a second conductive pad disposed on the light-transmitting buffer layer; the second conductive pad has a first conductive portion;

[0011] A light-transmitting insulating adhesive layer, laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined adhesive area covering the first conductive portion;

[0012] A conductive layer, laid on the light-transmitting insulating adhesive layer; the conductive layer has a second conductive portion covering the predetermined adhesive area; and

[0013] The welding part welds the first conductive part and the second conductive part by laser passing through the transparent substrate and the light-transmitting buffer layer in sequence.

[0014] Further, the transparent substrate is made of any one of the following materials: glass, transparent PI, PEN, or PET.

[0015] Further, the light-transmitting buffer layer is made of any one of the following materials: SiN, SiOx, or AlOx.

[0016] Further, the first conductive pad is made of any one of the following materials: Cu, Ni, Au, ITO, Mo, or Ag; the second conductive pad is made of any one of the following materials: Cu, Ni, Au, ITO, Mo, or Ag.

[0017] Further, the light-transmitting insulating adhesive layer is a transparent polymer adhesive material.

[0018] Further, the conductive layer is a Cu foil or an Al foil.

[0019] Further, a plurality of light-passing holes are formed in the first conductive part of the second conductive pad.

[0020] Further, the plurality of light-passing holes are in a honeycomb shape.

[0021] Further, the conductive layer has a corner part, and the corner part has a chamfer.

[0022] The present invention also provides a manufacturing method of a wiring structure of an LED display panel, which is characterized by comprising:

[0023] S1: Prepare a transparent substrate;

[0024] S2: Cover a light-transmitting buffer layer on the transparent substrate;

[0025] S3: Respectively arrange a first conductive pad and a second conductive pad on the light-transmitting buffer layer;

[0026] S4: Lay a light-transmitting insulating adhesive layer on the light-transmitting buffer layer, and a predetermined bonding area on the light-transmitting insulating adhesive layer covers the first conductive part on the second conductive pad;

[0027] S5: Lay a conductive layer on the light-transmitting insulating adhesive layer, and a second conductive part on the conductive layer covers the predetermined bonding area;

[0028] S6: Weld the first conductive part and the second conductive part by laser passing through the transparent substrate and the light-transmitting buffer layer in sequence.

[0029] The beneficial effects of the LED display panel wiring structure provided by the present invention are as follows: Compared with the prior art, in the LED display panel wiring structure provided by the present invention, a transparent buffer layer is covered on a transparent substrate, and first conductive pads and second conductive pads are arranged at intervals on the transparent buffer layer. The LED chips can be powered (or signal-transmitted) through the first conductive pads and the second conductive pads. The transparent buffer layer can prevent the diffusion of alkali metal ions such as Na+ and K+ in the glass substrate to other functional layers at high temperatures, which affects the performance of the thin film, and can also prevent the penetration of water and oxygen in the flexible substrate. (In addition, the transparent buffer layer also prevents direct conduction between the first conductive pad and the second conductive pad.) A partial area of the second conductive pad is a first conductive portion, a transparent insulating adhesive layer is laid on the transparent buffer layer, a partial area of the transparent insulating adhesive layer is a predetermined adhesive area, the predetermined adhesive area covers the first conductive portion, a conductive layer is laid and adhered on the transparent insulating adhesive layer, a partial area of the conductive layer is a second conductive portion, the second conductive portion covers the predetermined adhesive area, that is, the predetermined adhesive area is located between the first conductive portion and the second conductive portion, and the predetermined adhesive area bonds the first conductive portion and the second conductive portion together; a laser burns through the transparent substrate and the transparent buffer layer in sequence and then burns the first conductive portion and the second conductive portion. The first conductive portion and the second conductive portion melt and are welded together under the laser burning. (In one embodiment, the predetermined adhesive area melts or vaporizes during the welding process) to form a welding portion; Since the first conductive portion and the second conductive portion are directly welded, it is easy to maintain the stability of the voltage conduction between the conductive layer and the second conductive pad, and the use of a low-resistance metal foil for the conductive layer greatly reduces the voltage drop of the metal line layer and improves the light-emitting uniformity of the LED display panel. In addition, laser welding is only local heating and is not likely to cause large-area heating on the conductive layer, resulting in large-area melting and affecting the conductive reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0031] Figure 1 It is a schematic front sectional structure diagram of the LED display panel wiring structure provided by the embodiment of the present invention;

[0032] Figure 2 It is a schematic structure diagram of the transparent substrate, the transparent buffer layer, the first conductive pad, and the second conductive pad provided by the embodiment of the present invention;

[0033] Figure 3 It is a schematic structure diagram of the transparent insulating adhesive layer and the conductive layer provided by the embodiment of the present invention;

[0034] Figure 4 Schematic structural diagram of the etched conductive layer provided by the embodiment of the present invention;

[0035] Figure 5 Schematic structural diagram of the etched light-transmitting insulating adhesive layer provided by the embodiment of the present invention;

[0036] Figure 6 Top-view structural diagram of the LED (i.e., RBG in the figure) wiring structure provided by the embodiment of the present invention;

[0037] Figure 7 is Figure 6 magnified view at location A in Figure 1 ;

[0038] Figure 8 is Figure 6 magnified view at location A in Figure 2 ;

[0039] Figure 9 is Figure 6 magnified view at location A in Figure 3 ;

[0040] Figure 10 Arrangement schematic diagram of the LED display panel wiring structure provided by the embodiment of the present invention;

[0041] Figure 11 is Figure 10 magnified view at location B in;

[0042] Figure 12 Schematic diagram of the TFT Mini-LED pixel wiring structure.

[0043] Figure 13 Schematic manufacturing process diagram of the LED display panel wiring structure provided by the embodiment of the present invention.

[0044] Among them, the reference numerals in the figure:

[0045] 1 - transparent substrate; 2 - light-transmitting buffer layer; 31 - first conductive pad; 32 - second conductive pad; 321 - first conductive part; 3211 - light-passing hole; 4 - light-transmitting insulating adhesive layer; 5 - conductive layer; 51 - second conductive part; 6 - welding part; 7 - pixel signal line; 8 - LED chip; 9 - TFT structure. Specific embodiments

[0046] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0048] It should be noted that in the description of the embodiments of the present application, unless otherwise specified, " / " means "or". For example, A / B can mean A or B; "and / or" herein is only a description of the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist simultaneously, and B exists alone. Among them, A and B can be singular or plural respectively.

[0049] It should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present invention.

[0050] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more, unless otherwise specifically defined.

[0051] Please refer to Figures 1 to 11 , and now the LED display panel wiring structure provided by the present invention will be described. The LED display panel wiring structure includes: a transparent substrate 1, a light-transmitting buffer layer 2 covering the transparent substrate 1, a first conductive pad 31 disposed on the light-transmitting buffer layer 2, a second conductive pad 32 disposed on the light-transmitting buffer layer 2 and having a first conductive portion 321, a light-transmitting insulating adhesive layer 4 laid on the light-transmitting buffer layer 2 and having a predetermined bonding area covering the first conductive portion 321, a conductive layer 5 laid on the light-transmitting insulating adhesive layer 4 and having a second conductive portion 51 covering the predetermined bonding area; and a welding portion 6 formed by sequentially passing a laser through the transparent substrate 1 and the light-transmitting buffer layer 2 and welding the first conductive portion 321 and the second conductive portion 51.

[0052] Thus, a light-transmitting buffer layer 2 is covered on the transparent substrate 1, and the first conductive pads 31 and the second conductive pads 32 are arranged at intervals on the light-transmitting buffer layer 2. The LED chip 8 can be powered (or signal-transmitted) through the first conductive pads 31 and the second conductive pads 32. The light-transmitting buffer layer 2 can prevent the diffusion of alkali metal ions such as Na+ and K+ in the glass substrate (such as the transparent substrate 1) to other functional layers at high temperatures, which affects the performance of the thin film, and can also prevent the penetration of water and oxygen in the flexible substrate. (In addition, the light-transmitting buffer layer 2 also prevents the direct conduction between the first conductive pads 31 and the second conductive pads 32). Part of the area on the second conductive pad 32 is the first conductive part 321. The light-transmitting insulating adhesive layer 4 is laid on the light-transmitting buffer layer 2. Part of the area on the light-transmitting insulating adhesive layer 4 is a predetermined bonding area, and the predetermined bonding area covers the first conductive part 321. The conductive layer 5 is laid and bonded on the light-transmitting insulating adhesive layer 4. Part of the area on the conductive layer 5 is the second conductive part 51, and the second conductive part 51 covers the predetermined bonding area, that is, the predetermined bonding area is located between the first conductive part 321 and the second conductive part 51, and the predetermined bonding area bonds the first conductive part 321 and the second conductive part 51 together; the laser passes through the transparent substrate 1 and the light-transmitting buffer layer 2 in sequence and then burns the first conductive part 321 and the second conductive part 51. The first conductive part 321 and the second conductive part 51 are melted and welded together under the laser burning (in one embodiment, the predetermined bonding area melts or vaporizes during the welding process) to form a welding part 6; since the first conductive part 321 and the second conductive part 51 are directly welded, it is easy to maintain the stability of the conductivity of the voltage between the conductive layer 5 and the second conductive pad 32, and the conductive layer 5 uses a low-resistance metal foil, which greatly reduces the voltage drop of the metal wiring layer and improves the light-emitting uniformity of the LED display panel. In addition, laser welding is only local heating and is not likely to cause large-area heating on the conductive layer 5, resulting in large-area melting and affecting the conductive reliability.

[0053] In one embodiment, light-transmitting: can be a specific wavelength of light beam or natural light. In one embodiment, light-transmitting: can be that the transmittance of a predetermined light beam exceeds ninety percent.

[0054] In one embodiment, the transparent substrate 1 is a light-transmitting plate.

[0055] In one embodiment, the LED display panel is an LED display screen.

[0056] In one embodiment, the direct welding between the first conductive part 321 and the second conductive part 51 makes the conductive connection between the first conductive part 321 and the second conductive part 51 more stable and reliable.

[0057] In one embodiment, the number of the first conductive pads 31 is multiple.

[0058] In one embodiment, the first conductive pad 31 is a conductive metal layer laid on the light-transmitting buffer layer 2.

[0059] In one embodiment, the number of the second conductive pads 32 is multiple.

[0060] In one embodiment, the second conductive pad 32 is a conductive metal layer laid on the light-transmitting buffer layer 2.

[0061] In one embodiment, the light-transmitting buffer layer 2 is prepared by PECVD.

[0062] In one embodiment, the conductive layer 5 is a prefabricated Cu metal foil.

[0063] In one embodiment, the thickness of the Cu metal foil of the conductive layer 5 is 5 um to 100 um.

[0064] In one embodiment, the width of the Cu metal foil of the conductive layer 5 is greater than the thickness, which is convenient for etching.

[0065] In one embodiment, the first conductive pad 31 is prepared by PVD or vacuum sputtering. In one embodiment, the thickness of the first conductive pad 31 is 0.1 um to 5 um.

[0066] In one embodiment, the second conductive pad 32 is prepared by PVD or vacuum sputtering. In one embodiment, the thickness of the second conductive pad 32 is 0.1 um to 5 um.

[0067] In one embodiment, the conductive layer 5 is laid without a convex or concave pattern, which is convenient for etching the metal foil.

[0068] In one embodiment, the incident direction of the laser is perpendicular to the transparent substrate 1.

[0069] In one embodiment, the welding part 6 is located in the central area of the predetermined bonding area. In one embodiment, in the extending direction of the predetermined bonding area, the maximum width of the welding part 6 is greater than the minimum width of the welding part 6 to the edge of the predetermined bonding area.

[0070] In one embodiment, the contact position of the LED with the first conductive pad 31 is closer to the light-transmitting buffer layer 2 than the conductive layer 5. In one embodiment, the contact position of the LED with the second conductive pad 32 is closer to the light-transmitting buffer layer 2 than the conductive layer 5.

[0071] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the transparent substrate 1 is made of any one of the following materials: glass, transparent PI (PI: polyimide), PEN (PEN: polyethylene naphthalate), PET (PET: polyethylene terephthalate). Thus, the light transmittance is good.

[0072] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the light-transmitting buffer layer 2 is made of any one of SiN, SiOx (silicon oxide), and AlOx (aluminum oxide). In this way, the light transmittance is good.

[0073] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the first conductive pad 31 is made of any one of Cu, Ni, Au, ITO (ITO: indium tin oxide), Mo, and Ag; the second conductive pad 32 is made of any one of Cu, Ni, Au, ITO (ITO: indium tin oxide), Mo, and Ag.

[0074] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the light-transmitting insulating adhesive layer 4 is a transparent polymer adhesive. In this way, the light transmittance is good and the adhesiveness is good.

[0075] In one embodiment, the transparent polymer adhesive is silicone rubber or epoxy glue.

[0076] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the conductive layer 5 is a Cu foil or an Al foil. In this way, the conductivity is good.

[0077] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, a plurality of light-transmitting holes 3211 are formed in the first conductive portion 321 of the second conductive pad 32. In this way, it is convenient for the laser to pass through. In addition, it is also convenient for the edge of the light-transmitting hole 3211 to be welded to the conductive layer 5 to form a welding portion 6.

[0078] Further, please refer to Figures 1 to 11 , as a specific embodiment of the LED display panel wiring structure provided by the present invention, the plurality of light-transmitting holes 3211 are in a honeycomb shape. In this way, it is convenient for the laser to pass through.

[0079] In one embodiment, the laser spot covers at least two light-transmitting holes 3211.

[0080] In one embodiment, after the edge of the honeycomb-shaped light-transmitting hole 3211 is melted by the laser and welded to the conductive layer 5, a honeycomb-shaped welding portion 6 is formed, which is more firm and also convenient for heat dissipation.

[0081] In one embodiment, the focus of the laser is located on the conductive layer 5.

[0082] In one embodiment, each light-passing hole 3211 has a plurality of rib strips made of the same material as the first conductive part 321. One ends of the plurality of rib strips converge at the central area of the light-passing hole 3211. In this way, it is convenient to laser-weld multiple rib strips in the light-passing hole 3211 simultaneously. After the multiple rib strips are welded to the conductive layer 5, the multiple rib strips can converge stress to the central area of the light-passing hole 3211. In one embodiment, the light-passing holes 3211 are respectively polygons (such as hexagons), the number of rib strips is the same as the number of corners of the polygon, each rib strip corresponds to one of the multiple corners one by one, and the other ends of each rib strip are respectively connected to the corresponding corners. In this way, the light-passing hole 3211 with a polygonal structure is relatively stable, and when the edges of the light-passing hole 3211 are pulled in their respective extending directions, the adjacent sides will not be directly broken in the extending direction. The rib strips are connected at the corners of the polygon, and the corners are not easily deformed, improving the firmness and reliability of the connection of the rib strips. In one embodiment, one-third of the areas of any two adjacent hexagons overlap. In this way, stress can be shared between adjacent hexagons. In one embodiment, at least two sides of each hexagon are rib strips in adjacent hexagons. The side of a hexagon becomes a rib strip in an adjacent hexagon, so that the stress on the side of a hexagon can be shared to the corners and the central area of the adjacent hexagon, improving the stability of the welding of the hexagonal structure.

[0083] In one embodiment, the light-passing hole 3211 is circular.

[0084] Further, please refer to Figures 1 to 11 , as a specific implementation manner of the LED display panel wiring structure provided by the present invention, the conductive layer 5 has a corner portion, and the corner portion has a chamfer. In this way, the signal integrity problem caused by the characteristic impedance mutation at the right-angle bending is avoided.

[0085] In one embodiment, the chamfer radius r is not less than 1 pixel pitch.

[0086] In one embodiment, the unit module of the LED is 200*200pitch = 1mm. Assuming that the copper process is used as the power supply trace (i.e., the conductive layer 5), the resistivity ρ of copper Cu = 1.75*10 -8Ω·m; The designed line width of the LED transparent display array is 100 um, and the pixel current is 0.2 mA (corresponding to a display luminance of 5000 nits); 5000 nits, R → 1500 nits, G → 3000 nits, B → 500 nits; The R light intensity of 0.0016535 cd → luminance of 1653 cd / m2 → current of 0.13 mA; The G light intensity of 0.003 cd → luminance of 3005 cd / m2 → current of 0.031 mA; The B light intensity of 0.0005 cd → luminance of 506 cd / m2 → current of 0.028 mA; The total current is about 0.2 mA.

[0087] In one embodiment, if the power supply trace uses the ordinary 300-nm Cu process; then the sheet resistance R1 of 300-nm Cu = ρ Cu *10 - 3 / (10 - 3*3*10 -7 ) ≈ 0.06 Ω; The voltage drop V of a single power supply trace of the unit module drop = (200 + 199 + …… + 1)*0.2 mA*(0.06 Ω*1000 / 100) ≈ 2.4 V; The voltage drop of 2.4 V will seriously affect the normal display of the transparent LED array.

[0088] In one embodiment, if the power supply trace uses a 50-um-thick Cu foil; then the sheet resistance R2 of the Cu foil = ρ Cu *10 - 3 / (10 - 3*5*10 -5 ) ≈ 3.5*10 -4 Ω; The voltage drop V of a single power supply trace of the unit module drop = (200 + 199 + …… + 1)*0.2 mA*(3.5*10 -4 Ω*1000 / 100) ≈ 0.014 V; The voltage drop of 0.014 V hardly affects the normal display of the transparent LED array.

[0089] In one embodiment, please refer to Figure 12 , the TFT Mini-LED pixel wiring structure adopts a wiring structure with the same principle as the above-mentioned LED display panel wiring structure. The pixel signal line 7 provides signals for the TFT structure 9, and the regions C and D are respectively the same as the structure at A in Figure 6 .

[0090] Please refer to Figure 13, the present invention also provides a manufacturing method of a wiring structure for an LED display panel, including: S1: preparing a transparent substrate 1; S2: covering a light-transmitting buffer layer 2 on the transparent substrate 1; S3: respectively disposing a first conductive pad 31 and a second conductive pad 32 on the light-transmitting buffer layer 2; S4: laying a light-transmitting insulating adhesive layer 4 on the light-transmitting buffer layer 2, and a first conductive portion 321 on the second conductive pad 32 is covered by a predetermined bonding area on the light-transmitting insulating adhesive layer 4; S5: laying a conductive layer 5 on the light-transmitting insulating adhesive layer 4, and a second conductive portion 51 on the conductive layer 5 covers the predetermined bonding area; S6: sequentially passing a laser through the transparent substrate 1 and the light-transmitting buffer layer 2 to weld the first conductive portion 321 and the second conductive portion 51. Thus, the transparent substrate 1 is covered with the light-transmitting buffer layer 2, and the first conductive pad 31 and the second conductive pad 32 are disposed at intervals on the light-transmitting buffer layer 2. The LED chip 8 can be powered (or signal-transmitted) through the first conductive pad 31 and the second conductive pad 32. The light-transmitting buffer layer 2 can prevent the diffusion of alkali metal ions such as Na+ and K+ in the glass substrate (such as the transparent substrate 1) to other functional layers at high temperatures, affecting the performance of the thin film, and can also prevent the penetration of water and oxygen in the flexible substrate (in addition, the light-transmitting buffer layer 2 also prevents the direct conduction between the first conductive pad 31 and the second conductive pad 32). A partial area on the second conductive pad 32 is the first conductive portion 321. The light-transmitting insulating adhesive layer 4 is laid on the light-transmitting buffer layer 2. A partial area on the light-transmitting insulating adhesive layer 4 is the predetermined bonding area, and the predetermined bonding area covers the first conductive portion 321. The conductive layer 5 is laid and bonded on the light-transmitting insulating adhesive layer 4. A partial area on the conductive layer 5 is the second conductive portion 51, and the second conductive portion 51 covers the predetermined bonding area, that is, the predetermined bonding area is located between the first conductive portion 321 and the second conductive portion 51, and the predetermined bonding area bonds the first conductive portion 321 and the second conductive portion 51 together; the laser sequentially passes through the transparent substrate 1 and the light-transmitting buffer layer 2 and then burns the first conductive portion 321 and the second conductive portion 51. The first conductive portion 321 and the second conductive portion 51 are melted and welded together under the burning of the laser (in one embodiment, the predetermined bonding area melts or vaporizes during the welding process) to form a welding portion 6; since the first conductive portion 321 and the second conductive portion 51 are directly welded, it is easy to maintain the stability of the voltage conduction between the conductive layer 5 and the second conductive pad 32, and the use of a low-resistance metal foil for the conductive layer 5 greatly reduces the voltage drop of the metal wiring layer, improving the light-emitting uniformity of the LED display panel. In addition, laser welding is only local heating and is not likely to cause large-area heating on the conductive layer 5, resulting in large-area melting and affecting the conductive reliability.

[0091] In one embodiment, the method of removing a part of the light-transmissive insulating adhesive layer 4 is to use organic solvents such as acetone, NMP (NMP: N-methylpyrrolidone), DMAC (DMAC: dimethylacetamide), DMSO (DMSO: dimethyl sulfoxide) to remove it; in one embodiment, a part of the light-transmissive insulating adhesive layer 4 can be removed by using O2 plasma to remove the adhesive layer material, exposing the pad area.

[0092] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and substitutions can be made, and these improvements and substitutions should also be regarded as the protection scope of the present invention.

Claims

1. An LED display panel wiring structure, characterized in that, Comprising: A transparent substrate; A light-transmitting buffer layer covering the transparent substrate; the light-transmitting buffer layer is made of an insulating material; A first conductive pad disposed on the light-transmitting buffer layer; A second conductive pad disposed on the light-transmitting buffer layer; the second conductive pad has a first conductive portion; A light-transmitting insulating adhesive layer laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined adhesive area covering the first conductive portion; A conductive layer laid on the light-transmitting insulating adhesive layer; the conductive layer has a second conductive portion covering the predetermined adhesive area; the conductive layer is a low-resistance metal foil; And A welding portion formed by laser passing through the transparent substrate and the light-transmitting buffer layer in sequence to weld the first conductive portion and the second conductive portion.

2. The wiring structure of the LED display panel according to claim 1, characterized in that, The transparent substrate is made of any one of glass, transparent PI, PEN, and PET.

3. The wiring structure of the LED display panel according to claim 1, characterized in that, The light-transmitting buffer layer is made of any one of SiN, SiOx, and AlOx.

4. The LED display panel wiring structure according to claim 1, characterized in that The first conductive pad is made of any one of Cu, Ni, Au, ITO, Mo, and Ag; the second conductive pad is made of any one of Cu, Ni, Au, ITO, Mo, and Ag.

5. The wiring structure of the LED display panel according to claim 1, characterized in that, The light-transmitting insulating adhesive layer is a transparent polymer adhesive material.

6. The wiring structure of the LED display panel according to claim 1, characterized in that, The conductive layer is a Cu foil or an Al foil.

7. The wiring structure of the LED display panel according to claim 1, wherein A plurality of light-transmitting holes are formed in the first conductive portion of the second conductive pad.

8. The LED display panel wiring structure according to claim 7, characterized in that, The plurality of light-transmitting holes are in a honeycomb shape.

9. The wiring structure of the LED display panel according to claim 1, wherein, The conductive layer has a corner portion, and the corner portion has a chamfer.

10. A manufacturing method of a wiring structure of an LED display panel, characterized in that, Comprising: S1: Prepare a transparent substrate; S2: Cover a light-transmitting buffer layer on the transparent substrate; the light-transmitting buffer layer is made of an insulating material; S3: Dispose a first conductive pad and a second conductive pad on the light-transmitting buffer layer respectively; S4: Lay a light-transmitting insulating adhesive layer on the light-transmitting buffer layer, and the predetermined adhesive area on the light-transmitting insulating adhesive layer covers the first conductive portion on the second conductive pad; S5: Lay a conductive layer on the light-transmitting insulating adhesive layer, and the second conductive portion on the conductive layer covers the predetermined adhesive area; the conductive layer is a low-resistance metal foil; S6: Pass a laser through the transparent substrate and the light-transmitting buffer layer in sequence to weld the first conductive portion and the second conductive portion.

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