An organic-inorganic hybrid optoelectronic neurosynaptic device and a preparation method thereof

Abstract

The application discloses an organic-inorganic hybrid photoelectric nerve synapse device and a preparation method thereof. The organic-inorganic hybrid photoelectric nerve synapse device comprises a highly doped silicon substrate as a bottom electrode, an organic perovskite film formed on the bottom electrode, an inorganic perovskite film formed on the organic perovskite film, and a top electrode formed on the inorganic perovskite film. Light source excitation and voltage excitation are used as stimulation signals, and the photoelectric response coupling of the organic perovskite film and the inorganic perovskite film is utilized to realize high-stability photoelectric nerve synapse characteristic simulation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to an organic-inorganic hybrid optoelectronic synapse device and its fabrication method. Background Technology

[0002] Traditional computers are mostly based on the von Neumann architecture, where information storage and processing units are physically separated. This mismatch between data processing and retrieval speeds limits further improvements in computational efficiency. Neuromorphic computing, as a novel computing architecture, integrates the functions of memory and processor into a single unit. Data can be stored immediately after computation and can be quickly retrieved from memory for in-situ computation. Developing neuromorphic synaptic devices with both storage and computational capabilities is a primary task for achieving high-efficiency computing.

[0003] Currently, most common neuromorphic synaptic devices are based on the modulation of electrical signals and cannot be stimulated or responded to by other signals. Their modulation methods are relatively simple and cannot meet the increasingly complex signal processing needs. Optoelectronic synaptic devices, as a novel type of neuromorphic computing device, can simultaneously receive both optical and electrical stimulation signals, completing computational tasks under multiple signal modes. This makes their applications more flexible and represents the future direction for next-generation neural computing devices.

[0004] Organic perovskite materials are photosensitive semiconductors that can respond to both electrical and optical signals, making them ideal for constructing optoelectronic synaptic devices. However, organic perovskite materials, such as MAPbI3 and MAPbBr3, are prone to degradation in air, resulting in poor stability when directly used to fabricate optoelectronic devices. Although encapsulation can isolate organic perovskite materials from the influence of components like water and oxygen, this method still somewhat affects the device's sensitivity to optical signals compared to direct exposure to light. Summary of the Invention

[0005] This invention discloses an organic-inorganic hybrid photoelectric synaptic device, which leverages the complementary advantages of organic and inorganic perovskite materials to obtain a high-performance and highly stable photoelectric synaptic device for constructing a perovskite-based photoelectric neuromorphic computing system. Specifically, it includes: a highly doped silicon substrate as the bottom electrode; an organic perovskite thin film formed on the bottom electrode; an inorganic perovskite thin film formed on the organic perovskite thin film; and a top electrode formed on the inorganic perovskite thin film. Using light source excitation and voltage excitation as stimulation signals, and utilizing the photoelectric response coupling of the organic and inorganic perovskite thin films, highly stable photoelectric synaptic characteristic simulation is achieved.

[0006] In the organic-inorganic hybrid photoelectric synaptic device of the present invention, the organic perovskite thin film MAPbI3, MAPbBr3 or MAPbCl3 is preferred.

[0007] In the organic-inorganic hybrid photoelectric synaptic device of the present invention, the inorganic perovskite thin film is preferably CsPbBr3, CsPbCl3 or CsPbI3.

[0008] In the organic-inorganic hybrid photoelectric synaptic device of the present invention, preferably, the thickness of the organic perovskite film is 40 nm and the thickness of the inorganic perovskite film is 60 nm.

[0009] This invention also discloses a method for fabricating an organic-inorganic hybrid photoelectric synaptic device, comprising the following steps: using a highly doped silicon substrate as a bottom electrode; forming an organic perovskite thin film on the bottom electrode; forming an inorganic perovskite thin film on the organic perovskite thin film; forming a top electrode on the inorganic perovskite thin film; using light source excitation and voltage excitation as stimulation signals; and utilizing the photoelectric response coupling of the organic and inorganic perovskite thin films to achieve highly stable simulation of photoelectric synaptic characteristics.

[0010] In the method for fabricating the organic-inorganic hybrid optoelectronic synaptic device of the present invention, the preferred method is to use the organic perovskite thin film MAPbI3, MAPbBr3, or MAPbCl3.

[0011] In the method for fabricating the organic-inorganic hybrid photoelectric synaptic device of the present invention, the inorganic perovskite thin film is preferably CsPbBr3, CsPbCl3 or CsPbI3.

[0012] In the method for fabricating the organic-inorganic hybrid photoelectric nerve synapse device of the present invention, it is preferable to form the organic perovskite thin film and the inorganic perovskite thin film by a homogenization method.

[0013] In the method for fabricating the organic-inorganic hybrid photoelectric neural synapse device of the present invention, preferably, the thickness of the organic perovskite film is 40 nm and the thickness of the inorganic perovskite film is 60 nm.

[0014] Beneficial effects:

[0015] (1) The combination of storage and computing functions is achieved by using perovskite-based neural synaptic devices, which breaks the bottleneck of the traditional von Neumann computing architecture. This avoids the frequent exchange and movement of information between storage and computing units. Moreover, with the help of the excellent photoelectric detection capabilities of perovskite materials, more possibilities are provided for multi-mode brain-like computing under the new material system.

[0016] (2) To solve the problem of the instability of organic perovskite materials in air, a scheme of using organic-inorganic heterojunction is proposed to improve the stability of the device and obtain a neural synapse device with high stability.

[0017] (3) The device structure of organic-inorganic perovskite heterojunction can not only optimize the stability of the device, but also use the photoelectric response coupling of the two to obtain a highly sensitive photoelectric neural synapse device for photoelectric neural morphology computing. Attached Figure Description

[0018] Figure 1 This is a flowchart of the fabrication method for organic-inorganic hybrid optoelectronic neural synapse devices.

[0019] Figures 2-4 This is a schematic diagram of the structure of each stage in the fabrication method of organic-inorganic hybrid optoelectronic neural synapse device.

[0020] Figure 5 This is a schematic diagram of a structure that uses light source excitation and voltage excitation as stimulation signals for an organic-inorganic hybrid photoelectric synapse device to simulate the characteristics of a photoelectric synapse. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for explaining this invention and are not intended to limit this invention. The described embodiments are merely some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0022] In the description of this invention, it should be noted that the terms "upper," "lower," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0023] Furthermore, many specific details of the invention, such as the structure, materials, dimensions, processing techniques, and methods of the device, are described below to provide a clearer understanding of the invention. However, as those skilled in the art will understand, the invention may be implemented without adhering to these specific details. Unless specifically indicated below, various parts of the device may be made of materials known to those skilled in the art, or may employ materials with similar functionality developed in the future.

[0024] Figure 1 This is a flowchart illustrating the fabrication process of organic-inorganic hybrid optoelectronic neural synapse devices. (For example...) Figure 1 As shown, the method for fabricating an organic-inorganic hybrid optoelectronic synaptic device includes the following steps:

[0025] In step S1, a p-type highly doped silicon substrate is prepared as the bottom electrode 100 for fabricating an organic-inorganic hybrid optoelectronic synaptic device. The substrate can also be an n-type highly doped silicon substrate, etc.

[0026] In step S2, an organic perovskite thin film is prepared using a spin coat method. First, in a glove box, a MAPbI3 solution is drop-coated onto a p-type highly doped silicon substrate serving as the bottom electrode 100. Then, a spin coater is used for spin coating to form an organic perovskite thin film 101, as shown below. Figure 2 As shown. Preferably, the adhesive is first spun at a speed of 300 rpm to 800 rpm for 5 to 20 seconds, then spun at a speed of 2000 rpm to 5000 rpm for 20 to 60 seconds. Afterwards, it is dried at 60°C for 20 minutes using a heating plate. The organic perovskite film material can also be MAPbBr3, MAPbCl3, etc. The preferred thickness of the organic perovskite film is 40 nm. Increasing the thickness of the organic perovskite film improves the device's flexibility and response, but reduces its durability and stability.

[0027] In step S3, an inorganic perovskite film is prepared using a spin coat method. First, in a glove box, a CsPbBr3 solution is drop-coated onto an organic perovskite film 101, and then a spin coater is used for spin coating to form an inorganic perovskite film 102. Figure 3As shown. Preferably, the adhesive is first spun at a speed of 300 rpm to 800 rpm for 5 to 20 seconds, and then spun at a speed of 1000 rpm to 3000 rpm for 40 to 120 seconds. Afterwards, it is dried at 60°C for 20 minutes using a heating plate. The inorganic perovskite thin film material can also be CsPbBr3, CsPbCl3, CsPbI3, etc. The preferred thickness of the inorganic perovskite thin film is 60 nm. Increasing the thickness of the inorganic perovskite thin film improves device stability and durability, but reduces flexibility and response sensitivity. Inorganic perovskite materials such as CsPbBr3, CsPbCl3, and CsPbI3 not only possess excellent photoelectric response but also exhibit stable operation in air. Therefore, combining inorganic perovskite materials with organic perovskites, and utilizing the stability of inorganic perovskite materials in air, can greatly increase the stability of the device while ensuring photoelectric response, and has the potential to be applied to high-performance photoelectric neural synapses.

[0028] In step S4, using a hard mask, multiple mutually separated top electrodes 103 are fabricated on the inorganic perovskite thin film 102 by magnetron sputtering, resulting in the structure shown below. Figure 4 As shown. The material of the top electrode can also be Al, Pt, Au, Ag, etc.; the thickness is preferably 50nm to 150nm.

[0029] In step S5, as Figure 5 As shown, voltage excitation 104 and light source excitation 105 are used as stimulation signals for the photoelectric perovskite synaptic device, achieving highly stable simulation of photoelectric neural synaptic characteristics. Photoelectric modulation is achieved by leveraging the sensitive response of organic and inorganic perovskite materials to photoelectric signals. The air stability of inorganic perovskite materials improves the overall reliability of the device, enhancing its stability. Simultaneously, the device exhibits superior flexibility and a more sensitive response.

[0030] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. An organic-inorganic hybrid photoelectric neural synapse device, characterized in that, include: A highly doped silicon substrate is used as the bottom electrode. An organic perovskite thin film is formed on the bottom electrode; An inorganic perovskite film is formed on the organic perovskite film; The top electrode is formed on the inorganic perovskite thin film. The inorganic perovskite film serves as an encapsulation layer to isolate water and oxygen while allowing light to pass through to excite the underlying organic perovskite film. The organic perovskite film directly contacts the bottom electrode to ensure photoelectric response sensitivity. Using light source excitation and voltage excitation as stimulation signals, and leveraging the photoelectric response coupling of organic and inorganic perovskite thin films, along with the air stability of inorganic perovskite materials, highly stable photoelectric neural synaptic characteristics can be simulated.

2. The organic-inorganic hybrid photoelectric synapse device according to claim 1, characterized in that, The organic perovskite film is MAPbI3, MAPbBr3, or MAPbCl3.

3. The organic-inorganic hybrid photoelectric synapse device according to claim 1, characterized in that, The inorganic perovskite film is CsPbBr3, CsPbCl3, or CsPbI3.

4. The organic-inorganic hybrid photoelectric synapse device according to claim 1, characterized in that, The organic perovskite film has a thickness of 40 nm, and the inorganic perovskite film has a thickness of 60 nm.

5. A method for fabricating an organic-inorganic hybrid optoelectronic neural synapse device, characterized in that, Includes the following steps: A highly doped silicon substrate is used as the bottom electrode; An organic perovskite thin film is formed on the bottom electrode; An inorganic perovskite film is formed on the organic perovskite film; A top electrode is formed on the inorganic perovskite thin film. The inorganic perovskite film serves as an encapsulation layer to isolate water and oxygen while allowing light to pass through to excite the underlying organic perovskite film. The organic perovskite film directly contacts the bottom electrode to ensure photoelectric response sensitivity. Using light source excitation and voltage excitation as stimulation signals, and leveraging the photoelectric response coupling of organic and inorganic perovskite thin films, along with the air stability of inorganic perovskite materials, highly stable photoelectric neural synaptic characteristics can be simulated.

6. The method for fabricating the organic-inorganic hybrid photoelectric neural synapse device according to claim 5, characterized in that, The organic perovskite film is MAPbI3, MAPbBr3, or MAPbCl3.

7. The method for fabricating the organic-inorganic hybrid photoelectric neural synapse device according to claim 5, characterized in that, The inorganic perovskite film is CsPbBr3, CsPbCl3, or CsPbI3.

8. The method for fabricating the organic-inorganic hybrid photoelectric neural synapse device according to claim 5, characterized in that, The organic perovskite film and the inorganic perovskite film were formed by a spin coating method.

9. The method for fabricating the organic-inorganic hybrid photoelectric neural synapse device according to claim 5, characterized in that, The organic perovskite film has a thickness of 40 nm, and the inorganic perovskite film has a thickness of 60 nm.

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