A soft-matter interface-based memristor and method of use thereof

Abstract

The application discloses a kind of based on soft material interface memristor and its use method, including single-channel PDMS block, composite channel PDMS block and intermediate layer;Composite channel PDMS block is opened with cross structure channel and second single straight channel, cross structure channel is communicated with second single straight channel, and one end of cross structure channel includes at least two entrances, and composite channel PDMS block is covered with intermediate layer, and through-hole is opened in intermediate layer, and intermediate layer is covered with single-channel PDMS block, and first single straight channel is opened in single-channel PDMS block, and single-channel PDMS block, intermediate layer and composite channel PDMS block layer encapsulation are integrated structure, the first single straight channel and cross structure channel other end cross coincide, and cross coinciding position corresponds with the position of through-hole of intermediate layer.Based on the device of channel width adjustment, the similarity of generated electrical signal and biological synapse signal is extremely high, combined with the characteristics of biological affinity, so that the device has wide application prospect in brain-computer interaction, bionics, intelligent wear and other fields.

Description

Technical Field

[0001] This invention belongs to the field of memristors, and in particular to a memristor based on a soft matter interface and its usage method. Background Technology

[0002] A memristor, short for memory resistor, is the fourth fundamental device for constructing magnetic flux and charge in electronic systems, proposed by Cai Shaotang in 1971. The resistance of a memristor changes with the amount of charge flowing through it over a period of time. Because this characteristic is similar to the transmission of electrical signals between biological synapses, memristors can also provide new ideas for building artificial intelligence and neural networks. As a passive device (an independent device that does not require a power supply), the memristor is characterized by its small size and low power consumption. Its memory behavior can be applied to high-density storage and signal processing. The memristor's inherent nonlinear properties can generate chaotic circuits, which can be applied to secure communications.

[0003] Since HP Labs proposed a micron-scale titanium dioxide two-dimensional solid-state memristor device in 2008, many solid-state memristors have been proposed, based on principles including the movement of oxygen vacancies in metal oxides and the migration of doped ions in semiconductors. Some fluid memristors have also been invented, based on principles such as redox reactions between fluids and electrodes, adsorption and desorption of ionic liquids on electrode surfaces, polarization of ion concentration in solutions, and confined ion transport in the double layer of nanochannels.

[0004] For memristors to function as biomimetic synapses or neural network systems and thus build human-computer interaction channels, they must be biocompatible and exist as independent devices (rather than large circuit combinations) that are highly consistent with biological synaptic signals. Many existing memristors require additional energy sources (such as heat sources, power supplies, or light sources) due to their high energy consumption, size, and difficulty in operation; they are circuit combinations rather than devices. While some fluid memristors utilize a liquid environment, they retain solid components internally, making them not entirely flexible. Furthermore, their poor biocompatibility can lead to rejection reactions with biological organisms. Because the operating principle of these memristors does not involve the electrical regulation of channels, their signals differ significantly from biological signals, making them unsuitable for brain-computer interfaces.

[0005] Memristors have a wide range of applications, but the core of most memristor devices requires fabrication processes at the nanometer or sub-nanometer level. This level of fabrication has very demanding requirements and is extremely expensive, which limits the widespread use of memristors. Summary of the Invention

[0006] The purpose of this invention is to solve the problems in the prior art and provide a memristor based on a soft matter interface and its usage method.

[0007] To achieve the above objectives, the present invention employs the following technical solution:

[0008] A memristor based on a soft matter interface includes a single-channel PDMS block, a composite-channel PDMS block, and an intermediate layer;

[0009] The composite channel PDMS block has a cross-structure channel and a second single straight channel. The cross-structure channel is connected to the second single straight channel. One end of the cross-structure channel includes at least two inlets. The composite channel PDMS block is covered with an intermediate layer. The intermediate layer has through holes. The intermediate layer is covered with a single channel PDMS block. The single channel PDMS block has a first single straight channel. The single channel PDMS block, the intermediate layer, and the composite channel PDMS block are encapsulated into an integral structure. The other ends of the first single straight channel and the cross-structure channel overlap. The overlapping position corresponds to the position of the through hole in the intermediate layer.

[0010] Furthermore, the intermediate layer comprises a monoporous polymer membrane and a porous polymer membrane, wherein the porous polymer membrane covers the composite channel PDMS block, and the monoporous polymer membrane covers the porous polymer membrane.

[0011] Furthermore, a first through hole is formed on the single-pore polymer membrane. The position of the first through hole corresponds to the intersection and overlap position of the first single straight channel and the cross structure channel. The diameter of the first through hole is smaller than the radius of the first single straight channel and the cross structure channel.

[0012] Furthermore, the monoporous polymer film is a laser-etched film.

[0013] Furthermore, the porous polymer membrane has a plurality of second through holes, some of which correspond to the positions of the first through holes, and the diameter of the second through holes is less than 1 micrometer.

[0014] Furthermore, the porous polymer membrane is a nuclear track plus chemically etched membrane.

[0015] Furthermore, the cross structure channel is a "Y", "T" or "+" shaped channel.

[0016] Furthermore, the inner walls of the first single straight channel, the second single straight channel, and the cross-structure channel are all hydrophilic surfaces.

[0017] A method of using the memristor based on the soft matter interface includes the following steps:

[0018] Different phase fluids are introduced from the inlet of the cross-structured channel;

[0019] At the intersection of fluids of different phases, bubbles or droplets are generated by compression, and the bubbles or droplets are pushed to the intersection of the first straight channel and the cross structure channel;

[0020] The positive and negative electrodes of the external voltage source are placed on the first single straight channel and the cross structure channel respectively, so that the interface of the bubble or droplet modulated by the electric field is away from or close to the nearby channel wall, and the resistance of the memristor device changes accordingly.

[0021] Furthermore, the different phases of the fluids are immiscible.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] This invention provides a memristor based on a soft matter interface. It encapsulates a single-channel PDMS block, a composite-channel PDMS block, and an intermediate layer as a single unit. The operating resistance state of the device is changed by adjusting the width of the nanochannel between the micron-sized bubble and the channel wall. The device requires no excitation energy source and can be directly connected to an electric field. This invention pioneers a memory-computing integrated memristor based on a flexible matter interface, forming a soft matter interface device based on gas-liquid interface fluctuations under an electric field. The device can switch between ohmic resistance, diode, and memristor states simply by adjusting the frequency of the input scan signal without any other adjustments.

[0024] This invention utilizes the properties of continuous and dispersed phases to influence the properties of memristors, offering a wide operating range. Both nonpolar and polar dispersed phases can deform under an external field, thereby achieving a dynamic resistance state transition effect and ultimately forming a memristor with a flexible interface based on an electrolyte system.

[0025] The memristor based on a soft matter interface of this invention has good biocompatibility. All components of the device are made of flexible, non-toxic, and bio-inert materials, and the device can be used with completely biocompatible sodium chloride solutions with concentrations close to physiological saline and air. Utilizing flexible matter interfaces, such as gas-liquid or liquid-liquid interfaces, under the influence of an applied field (such as an electric field), the dispersed phase undergoes polarization and deformation due to the electrostatic force of the electric field, resulting in dynamic configuration changes and memristor behavior.

[0026] The memristor based on a soft matter interface of this invention is flexible and wearable. The components of the device are made of inexpensive materials, and there are multiple fabrication processes to choose from, keeping costs relatively low. Based on adjustable channel width, the device generates electrical signals with extremely high similarity to biological synaptic signals. Combined with its bio-affinity properties, this makes the device a promising candidate for applications in brain-computer interfaces, bionics, and smart wearables. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a top view of the device structure of the present invention.

[0029] Figure 2 This is a structural diagram of each layer of the device of the present invention.

[0030] Wherein: 1-first single straight channel, 2-second single straight channel, 3-cross structure channel, 4-first through hole, 5-second through hole, A-single-pore polymer membrane, B-porous polymer membrane, C-single-channel PDMS block, D-composite-channel PDMS block. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0033] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0034] In the description of the embodiments of the present invention, it should be noted that if terms such as "upper," "lower," "horizontal," or "inner" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, terms such as "first" and "second" are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0035] Furthermore, the use of the term "horizontal" does not imply that the component must be absolutely horizontal, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0036] In the description of the embodiments of the present invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0037] The present invention will now be described in further detail with reference to the accompanying drawings:

[0038] See Figure 2 This invention provides a memristor based on a soft matter interface, comprising a single-channel PDMS block C, a composite-channel PDMS block D, and an intermediate layer. The single-channel PDMS block C, the composite-channel PDMS block D, and the intermediate layer are encapsulated into a single structure. The intermediate layer includes a monoporous polymer film A and a porous polymer film B. The memristor device has a four-layer structure: the top layer is the single-channel PDMS block C, the second layer is the monoporous polymer film A, the third layer is the porous polymer film B, and the bottom layer is the composite-channel PDMS block D. The device has two functional regions: a bubble-generating region and a bubble-liquid film electric field region. The inner walls of the channels formed on the single-channel PDMS block C and the composite-channel PDMS block D are all hydrophilic surfaces.

[0039] like Figure 1 and Figure 2As shown, the single-channel PDMS block C has a first single straight channel 1, providing a cross window to form a circuit loop. The composite channel PDMS block D has a cross structure channel 3 for producing bubbles or droplets and a section of the second single straight channel 2. The cross structure channel 3 is connected to the second single straight channel 2. One end of the cross structure channel 3 includes two inlets. The cross structure channel 3 can be a "Y", "T" or "+" type channel. The other ends of the first single straight channel 1 and the cross structure channel 3 overlap, providing a cross window for producing and transporting bubbles or droplets. The single-pore polymer film A is a laser-etched through-hole film. The single-pore polymer film A has a first through-hole 4, which is located at the intersection of the first single straight channel 1 and the cross structure channel 3 after vertical alignment. The aperture is smaller than the radius of the first single straight channel 1 and the cross structure channel 3. The aperture controls the opening area of ​​the device. The single-pore polymer film A provides support for the porous polymer film B. The porous polymer film B is a nuclear track-etched porous film with multiple second through-holes 5. The pore size of the second through-holes 5 is less than 1 micrometer. Some of the second through-holes 5 correspond to the positions of the first through-holes 4. The porous polymer film B is closely attached to the composite channel PDMS block D. The small pore size of the second through-holes 5 prevents bubbles or droplets from entering the other layer through the window. Within a reasonable range, the pore size is selected as large as possible to reduce the ineffective resistance of the device.

[0040] The packaging process of the memristor device based on the soft matter interface of the present invention is as follows:

[0041] Liquid inlets and outlets are reserved for the channels of the single-channel PDMS block C and the composite-channel PDMS block D of the PDMS channel layer, as well as for the single-pore polymer membrane A and the porous polymer membrane B.

[0042] The polymer membrane and PDMS channel layer were ultrasonically cleaned for 5 minutes each in a container using acetone, ethanol and water as solvents in that order. After cleaning, the membrane was removed and the surface was dried with 99% pure nitrogen gas and then placed in a heating device to dry.

[0043] Place the dried polymer film into a plasma cleaner and clean for 0.5 to 2 minutes. After removing it, soak it in a 6% (v / v) solution of 3-aminopropyltrimethoxysilane (APTES) for more than 20 minutes.

[0044] Place the dried PDMS channel layer into a plasma cleaner and clean for 0.5 to 2 minutes;

[0045] Under a magnifying glass, align and adhere the PDMS channel layer and polymer film according to the design structure. Press them with an appropriate weight or use a clamping structure, and bake them in an oven at 65°C for 2-5 hours to allow bonding to complete and strengthen.

[0046] The hydrophilic treatment process for the inner wall surface of the PDMS channel layer in the memristor based on the soft matter interface of the present invention is as follows:

[0047] a) Ultrasonic cleaning devices;

[0048] b) Pass a 1 wt% polyvinyl alcohol (PVA) solution into the channel and retain it for 10 minutes;

[0049] c) Remove the solution drying channel and bake on a hot plate at 110°C for 15 minutes;

[0050] d) Repeat b) and c) three times.

[0051] The method of using a memristor based on a soft matter interface according to the present invention includes the following steps:

[0052] Immiscible fluids are introduced into the inlet of the cross structure channel 3 through a fluid pump. At the intersection of different phases, bubbles or droplets are generated by compression, and other bubbles or droplets in the channel are discharged.

[0053] Individual bubbles or droplets are pushed to the position where the first single straight channel 1 intersects with the cross structure channel 3, at which the first single straight channel 1 and the cross structure channel 3 are connected, so that the bubbles or droplets stay at that position;

[0054] The positive and negative electrodes of the external voltage source are placed on the first single straight channel 1 and the cross structure channel 3 respectively, so that the interface of the bubble or droplet modulated by the electric field is away from or close to the nearby channel wall, and the resistance of the device changes accordingly.

[0055] The fluid introduced into the memristor based on the soft matter interface of the present invention can be a special fluid that responds to light, electromagnetic, heat, etc., or a fluid with rheological properties. After these special fluids are added, they can be controlled by an external field to cause different property changes in the memristor.

[0056] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A memristor based on a soft matter interface, characterized in that, It includes a single-channel PDMS block (C), a composite-channel PDMS block (D), and an intermediate layer; The composite channel PDMS block (D) has a cross structure channel (3) and a second single straight channel (2) connected to the cross structure channel (3). One end of the cross structure channel (3) includes at least two inlets. The composite channel PDMS block (D) is covered with an intermediate layer with through holes. The intermediate layer is covered with a single channel PDMS block (C) with a first single straight channel (1). The single channel PDMS block (C), the intermediate layer, and the composite channel PDMS block (D) are encapsulated as an integral structure. The other end of the first single straight channel (1) and the cross structure channel (3) overlaps. The overlapping position corresponds to the position of the through hole in the intermediate layer. The anode and cathode of the external voltage source are respectively placed on the first single straight channel (1) and the cross structure channel (3); The intermediate layer includes a monoporous polymer membrane (A) and a porous polymer membrane (B), wherein the porous polymer membrane (B) covers the composite channel PDMS block (D), and the monoporous polymer membrane (A) covers the porous polymer membrane (B). The monopore polymer membrane (A) has a first through hole (4), the position of which corresponds to the intersection of the first straight channel (1) and the cross structure channel (3), and the diameter of the first through hole (4) is smaller than the radius of the first straight channel (1) and the cross structure channel (3).

2. A memristor based on a soft matter interface according to claim 1, characterized in that, The monoporous polymer film (A) is a laser-etched film.

3. A memristor based on a soft matter interface according to claim 1, characterized in that, The porous polymer membrane (B) has a plurality of second through holes (5), some of which correspond to the positions of the first through holes (4), and the pore size of the second through holes (5) is less than 1 micrometer.

4. A memristor based on a soft matter interface according to claim 1, characterized in that, The porous polymer film (B) is a nuclear track plus chemical etching film.

5. A memristor based on a soft matter interface according to claim 1, characterized in that, The cross structure channel (3) is a "Y", "T" or "+" shaped channel.

6. A memristor based on a soft matter interface according to claim 1, characterized in that, The inner walls of the first single straight channel (1), the second single straight channel (2), and the cross structure channel (3) are all hydrophilic surfaces.

7. A method of using a memristor based on a soft matter interface as described in any one of claims 1 to 6, characterized in that, Includes the following steps: Different phase fluids are introduced from the inlet of the cross-structure channel (3); At the intersection of fluids of different phases, bubbles or droplets are generated by compression, and the bubbles or droplets are pushed to the intersection of the first straight channel (1) and the cross structure channel (3); The positive and negative electrodes of the external voltage source are placed on the first single straight channel (1) and the cross structure channel (3) respectively, so that the interface of the bubble or droplet modulated by the electric field is far away from or close to the nearby channel wall, and the resistance of the memristor device changes accordingly.

8. The method of using a memristor based on a soft matter interface according to claim 7, characterized in that, The fluids of different phases are immiscible.

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