A soft-matter interface-based memristor and method of use thereof
By designing a memristor based on a soft matter interface and modulating gas-liquid interface fluctuations with an electric field, the problems of high fabrication difficulty and poor biocompatibility of existing memristors are solved. This enables the transformation of electrical signals and biological signals of low-cost, flexible memristors to be similar, making them suitable for brain-computer interfaces and bionics.
Patent Information
- Application Number
- CN202211528240.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-30
- Publication Date
- 2026-05-29
- Estimated Expiration
- 2042-11-30
AI Technical Summary
Existing memristor devices are subject to demanding manufacturing processes and high costs. Most of these devices require an additional power source and have poor biocompatibility, which limits their application in brain-computer interfaces and bionics.
By employing a memristor based on a soft matter interface, and encapsulating a single-channel PDMS block, a composite-channel PDMS block, and an intermediate layer, the device achieves flexibility and biocompatibility by utilizing the changes in nanochannel width between micron bubbles and channel walls, combined with electric field modulation of gas-liquid interface fluctuations, thus avoiding the need for an additional energy source.
A low-cost, flexible, and biocompatible memristor is provided, which can switch between three states: ohmic resistance, diode, and memristor under an applied electric field. The electrical signal is similar to the biological synaptic signal, making it suitable for brain-computer interface and bionics.