A method for compensating sensitivity drift of MEMS resonant electric field sensor

Abstract

The present invention discloses a sensitivity drift compensation method for a MEMS resonant electric field sensor. The method comprises the following steps: by changing an external electric field, output information of the MEMS resonant electric field sensor at a first working frequency is measured; a sensitivity coefficient is calculated based on the external electric field value and the first output information; when the external electric field is set to zero, the output information of the MEMS resonant electric field sensor under different working conditions is measured to obtain second output information; according to the sensitivity coefficient and the second output information, an AC crosstalk noise voltage and an internal electrostatic field strength are calculated; and the sensitivity coefficient, the AC crosstalk noise voltage and the internal electrostatic field strength are used to perform synchronous correction and compensation to obtain the external electric field strength, thereby solving the technical problem in the prior art that the sensitivity of the MEMS resonant electric field sensor drifts due to the influence of other factors.

Description

Technical Field

[0001] The present invention relates to sensor-related fields, and in particular to a sensitivity drift compensation method for a MEMS resonant electric field sensor. Background Art

[0002] Electric field sensors are an important type of device used to sense electric field strength and are widely used in major fields such as aerospace, weather warning, smart grid, security protection, and scientific research.

[0003] In recent years, with the development of MEMS and micro-nano processing technology, a type of resonant electric field sensor based on MEMS technology has become a research hotspot. It has the characteristics of small size, low cost, easy mass production, and easy system integration, and has great advantages and broad prospects in practical applications. The sensitive structural characteristic size of MEMS resonant electric field sensors is at the micro-nano level. During the working process, the movable structure in it must vibrate periodically, and the optimal working point is its resonant frequency point. Then, during the actual working process of the sensor, due to the influence of changes in external factors such as temperature, pressure, humidity, and stress, its resonant frequency will shift, resulting in changes in the amplitude of the movable structure, which in turn causes the sensor sensitivity to drift, greatly affecting the accuracy of the measurement results.

[0004] However, the inventors of this application found that the above technology has at least the following technical problems in the process of implementing the technical solution of the invention in the embodiment of this application:

[0005] In the prior art, there is a technical problem that the sensitivity of the MEMS resonant electric field sensor may drift due to the influence of other factors. Summary of the invention

[0006] The embodiment of the present application solves the technical problem in the prior art that the sensitivity of the MEMS resonant electric field sensor drifts due to the influence of other factors by providing a sensitivity drift compensation method for the MEMS resonant electric field sensor. The embodiment of the present application achieves the technical effect of obtaining the characteristic parameters of the sensor through a combined calibration method of a special external electric field response curve calibration and a multi-working state zero input calibration, performing real-time and rapid compensation for the sensor output results, and effectively reducing the measurement error caused by the sensitivity drift.

[0007] In view of the above problems, an embodiment of the present application provides a method for compensating sensitivity drift of a MEMS resonant electric field sensor.

[0008] The present application provides a sensitivity drift compensation method for a MEMS resonant electric field sensor, which is applied to a MEMS resonant electric field sensor, wherein the output information of the MEMS resonant electric field sensor includes a vibration amplitude of a movable structure and an output voltage of a sensing end, wherein the method includes: by changing an external electric field, measuring the output information of the MEMS resonant electric field sensor at a first working frequency to obtain first output information, wherein the first output information at least includes a vibration amplitude of a first movable structure, an output voltage of a first sensing end, and an output voltage of a second sensing end, wherein the output voltage of the first sensing end and the output voltage of the second sensing end correspond to an external electric field value; calculating and obtaining a sensitivity coefficient according to the external electric field value and the first output information; when setting the external electric field to zero, measuring the output information of the MEMS resonant electric field sensor under different working conditions to obtain second output information; calculating and obtaining an AC crosstalk noise voltage and an internal electrostatic field strength according to the sensitivity coefficient and the second output information; and performing synchronous correction compensation using the sensitivity coefficient, the AC crosstalk noise voltage, and the internal electrostatic field strength to obtain an external electric field strength.

[0009] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0010] Because the two output quantities of the sensor's movable structure vibration amplitude and the induction end output voltage are used to obtain parameter information such as sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength, real-time and rapid compensation of sensitivity drift is achieved based on these parameters, and the sensor characteristic parameters are obtained through a combined calibration method of special external electric field response curve calibration and multi-working state zero input calibration, and the sensor output results are compensated in real time and rapidly, effectively reducing the measurement error caused by sensitivity drift. The technical effect has broad application prospects in aerospace, meteorological warning, smart grid, security protection, scientific research and other fields.

[0011] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic diagram of a method for compensating sensitivity drift of a MEMS resonant electric field sensor according to an embodiment of the present application;

[0013] Figure 2 This is a schematic diagram of the principle of using an external electric field response curve to calibrate the sensitivity coefficient in the embodiment of the present application;

[0014] Figure 3This is a schematic diagram of the principle of measuring the AC crosstalk noise voltage and internal electrostatic field strength of the sensor using multi-working state zero input calibration in an embodiment of the present application;

[0015] Figure 4 This is a structural block diagram of a MEMS resonant electric field sensor based on the sensitivity drift compensation method of the present invention in an embodiment of the present application. DETAILED DESCRIPTION

[0016] The embodiment of the present application solves the technical problem in the prior art that the sensitivity of the MEMS resonant electric field sensor drifts due to the influence of other factors by providing a sensitivity drift compensation method for the MEMS resonant electric field sensor, and achieves the technical effect of obtaining the characteristic parameters of the sensor through a combined calibration method of a special external electric field response curve calibration and a multi-working state zero input calibration, and performing real-time rapid compensation for the sensor output result, thereby effectively reducing the measurement error caused by the sensitivity drift. Below, an example embodiment of the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments of the present application, and it should be understood that the present application is not limited to the example embodiments described herein.

[0017] Application Overview

[0018] Electric field sensors are an important type of device used to sense electric field strength and are widely used in major fields such as aerospace, weather warning, smart grid, security protection, and scientific research.

[0019] In recent years, with the development of MEMS and micro-nano processing technology, a type of resonant electric field sensor based on MEMS technology has become a research hotspot. It has the characteristics of small size, low cost, easy mass production, and easy system integration, and has great advantages and broad prospects in practical applications. The sensitive structural characteristic size of MEMS resonant electric field sensors is at the micro-nano level. During the working process, the movable structure in it must vibrate periodically, and the optimal working point is its resonant frequency point. Then, during the actual working process of the sensor, due to the influence of changes in external factors such as temperature, pressure, humidity, and stress, its resonant frequency will shift, resulting in changes in the amplitude of the movable structure, which in turn causes the sensor sensitivity to drift, greatly affecting the accuracy of the measurement results.

[0020] In response to the above technical problems, the overall idea of ​​the technical solution provided by this application is as follows:

[0021] The embodiment of the present application provides a sensitivity drift compensation method for a MEMS resonant electric field sensor, which is applied to a MEMS resonant electric field sensor, wherein the output information of the MEMS resonant electric field sensor includes a vibration amplitude of a movable structure and an output voltage of a sensing end, wherein the method includes: by changing an external electric field, measuring the output information of the MEMS resonant electric field sensor at a first working frequency to obtain first output information, wherein the first output information at least includes a first movable structure vibration amplitude, a first sensing end output voltage, and a second sensing end output voltage, wherein the first sensing end output voltage and the second sensing end output voltage correspond to an external electric field value; calculating and obtaining a sensitivity coefficient according to the external electric field value and the first output information; when setting the external electric field to zero, measuring the output information of the MEMS resonant electric field sensor under different working conditions to obtain second output information; calculating and obtaining an AC crosstalk noise voltage and an internal electrostatic field strength according to the sensitivity coefficient and the second output information; and performing synchronous correction compensation using the sensitivity coefficient, the AC crosstalk noise voltage, and the internal electrostatic field strength to obtain an external electric field strength.

[0022] After introducing the basic principles of the present application, various non-limiting implementation methods of the present application will be specifically described below in conjunction with the drawings in the specification.

[0023] Embodiment 1

[0024] like Figure 1 As shown, an embodiment of the present application provides a sensitivity drift compensation method for a MEMS resonant electric field sensor, which is applied to a MEMS resonant electric field sensor, wherein the output information of the MEMS resonant electric field sensor includes the vibration amplitude of the movable structure and the output voltage of the sensing end, wherein the method includes:

[0025] Step S100: by changing the external electric field, measuring the output information of the MEMS resonant electric field sensor at the first working frequency, obtaining first output information, wherein the first output information at least includes the vibration amplitude of the first movable structure, the output voltage of the first sensing end, and the output voltage of the second sensing end, wherein the output voltage of the first sensing end and the output voltage of the second sensing end correspond to the external electric field value;

[0026] Specifically, the resonant sensor is a device that directly converts the measured change into the change of the object's resonant frequency, also known as a frequency sensor. MEMS refers to micro-electromechanical system (MEMS, Micro-Electro-Mechanical System), also known as micro-electromechanical system, microsystem, micro-machine, etc., refers to a high-tech device with a size of several millimeters or even smaller. It is an independent intelligent system. The MEMS resonant electric field sensor is a device that combines a resonant sensor with a micro-electromechanical system. The sensor output information includes the vibration amplitude information of the movable structure and the output voltage of the sensing end. After the sensor is operated, it is determined whether the sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength parameters are valid. When invalid, the external electric field is changed to obtain the first sensing end output voltage and the second sensing end output voltage, and the first sensing end output voltage corresponds to an external electric field value, and the second sensing end output voltage corresponds to an external electric field value. Further, the external electric field response curve is calibrated, that is, the vibration amplitude A0 of the movable structure of the sensor is measured when working at a certain frequency, and at least two different strengths of the external electric field E are measured. ex01 and E ex02 The output voltage U s01 and U s02 .

[0027] Step S200: Calculating a sensitivity coefficient according to the external electric field value and the first output information;

[0028] Step S300: When the external electric field is set to zero, the output information of the MEMS resonant electric field sensor under different working conditions is measured to obtain second output information;

[0029] Specifically, when the external electric field response curve is calibrated, that is, the vibration amplitude A0 of the movable structure of the sensor is measured when working at a certain frequency, and at least two different strengths of the external electric field E are measured. ex01 and E ex02 The output voltage U s01 and U s02 Then, calculate the sensitivity coefficient k. Figure 2 As shown, when the sensor works under certain conditions and a certain frequency, it has a certain amplitude A0. Theoretically, there is a linear relationship between the output voltage of the sensor sensing end and the external electric field strength. The slope of the curve is the product of the amplitude and the sensitivity coefficient:

[0030] Using the formula:

[0031]

[0032] The sensitivity coefficient k is calculated, where A0 is the vibration amplitude of the first movable structure, E ex01is the first external electric field, E ex02 is the second external electric field, U s01 is the output voltage of the first sensing terminal, U s02 The output information measured when the external electric field is set to zero is essentially a multi-working state zero input calibration process, which sets the external electric field to zero, sets the sensor to work under at least two different conditions, and measures the vibration amplitude of the sensor's movable structure and the output voltage of the induction end as the second output information.

[0033] Step S400: Calculating and obtaining an AC crosstalk noise voltage and an internal electrostatic field strength according to the sensitivity coefficient and the second output information;

[0034] Step S500: performing synchronous correction and compensation using the sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength to obtain external electric field strength.

[0035] Specifically, the obtained sensitivity coefficient and the second output information (vibration amplitude of the movable structure and output voltage of the sensing end under at least two working conditions) are used to calculate the AC crosstalk noise voltage and the internal electrostatic field strength through the corresponding formula. After the AC crosstalk noise voltage and the internal electrostatic field strength data are calculated, it is further determined whether the sensitivity coefficient, the AC crosstalk noise voltage and the internal electrostatic field strength parameters are valid. If they are valid, the vibration amplitude A of the movable structure of the sensor and the output voltage U of the sensing end are re-measured. s , based on the measured vibration amplitude A of the movable structure of the sensor and the output voltage U of the sensing end s , sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength are used to calculate the external electric field strength, and the sensor output results are compensated quickly in real time, effectively reducing the measurement error caused by sensitivity drift.

[0036] Furthermore, the output information of the MEMS resonant electric field sensor at the first operating frequency is measured by changing the external electric field to obtain the first output information. In the embodiment of the present application, step S100 further includes:

[0037] Step S110: measuring the vibration amplitude of the movable structure of the MEMS resonant electric field sensor at the first operating frequency to obtain the first movable structure vibration amplitude;

[0038] Step S120: Under the first operating frequency, the corresponding induction terminal output voltages under at least two external electric field values ​​of different strengths are measured to obtain an external electric field response output voltage, wherein the external electric field response output voltage at least includes the first induction terminal output voltage and the second induction terminal output voltage, and the external electric field value at least includes a first external electric field and a second external electric field, wherein the first induction terminal output voltage corresponds to the first external electric field, and the second induction terminal output voltage corresponds to the second external electric field;

[0039] Step S130: recording the vibration amplitude of the first movable structure, the output voltage of the first sensing end, and the output voltage of the second sensing end to obtain the first output information.

[0040] Specifically, an operating frequency is obtained, and the vibration amplitude of the movable structure of the MEMS resonant electric field sensor is measured at the operating frequency to obtain the first movable structure vibration amplitude, and the output voltage of the sensing end is measured at the operating frequency. The output voltage includes at least two output voltages, namely at least the first sensing end output voltage and the second sensing end output voltage, wherein the first sensing end output voltage and the second sensing end output voltage are obtained by measuring under different external electric field values, wherein the operating frequencies under the different external electric field values ​​are the same, the first sensing end output voltage corresponds to the first external electric field, and the second sensing end output voltage corresponds to the second external electric field. The measured first movable structure vibration amplitude, the first sensing end output voltage, and the second sensing end output voltage are recorded and used as the first output information. Through the measurement of the above data, the basic calculation information for the subsequent sensitivity correction is obtained, which lays a solid foundation for subsequent calculations.

[0041] Furthermore, when the external electric field is set to zero, the output information of the MEMS resonant electric field sensor under different working conditions is measured to obtain second output information. Step S300 of the embodiment of the present application further includes:

[0042] Step S310: setting the external electric field to zero to obtain at least two different working conditions, when there are two working conditions, they are a first working condition and a second working condition, wherein the first working condition is different from the second working condition;

[0043] Step S320: when the external electric field is zero and the working condition is the first working condition, measuring the output information of the MEMS resonant electric field sensor including the vibration amplitude of the second movable structure and the output voltage of the third sensing end;

[0044] Step S330: when the external electric field is zero and the working condition is the second working condition, measuring the output information of the MEMS resonant electric field sensor including the vibration amplitude of the third movable structure and the output voltage of the fourth sensing end;

[0045] Step S340: recording the vibration amplitude of the second movable structure, the vibration amplitude of the third movable structure, the output voltage of the third sensing end, and the output voltage of the fourth sensing end to constitute the second output information.

[0046] Specifically, the working conditions can be set as one or more combinations of working frequency, temperature, pressure, humidity, stress, and natural environmental factors, and the first working condition is different from the second working condition. After the external electric field is set to zero, the output information of the MEMS is measured under the first working condition, wherein the output information includes the vibration amplitude of the second movable structure and the output voltage of the third sensing end. Similarly, after the external electric field is set to zero, the output information of the MEMS is measured under the second working condition to obtain the vibration amplitude of the third movable structure and the output voltage of the fourth sensing end, and the second movable structure vibration amplitude, the third movable structure vibration amplitude, the third sensing end output voltage, and the fourth sensing end output voltage are recorded, and the recorded information is used as the second output information.

[0047] Further, the calculation of the AC crosstalk noise voltage and the internal electrostatic field strength according to the sensitivity coefficient and the second output information includes:

[0048] Using the formula

[0049]

[0050] Calculate and obtain the AC crosstalk noise voltage U cross , internal electrostatic field strength E in , where A 11 is the vibration amplitude of the second movable structure, A 12 is the vibration amplitude of the third movable structure, U s11 is the output voltage of the third induction terminal, U s12 is the output voltage of the fourth sensing terminal, and k is the sensitivity coefficient. Figure 3 As shown, Figure 3 Schematic diagram of the principle of using multi-working state zero input calibration to measure the sensor AC crosstalk noise voltage and internal electrostatic field strength. First, the external electric field is set to zero, and then the sensor is set to work under at least two different conditions, and the vibration amplitude of the sensor's movable structure is measured. 11 and A 12 , the output voltage at the induction end is U s11 and U s12 , respectively, with U s11is the intercept, kA 11 is the slope and U s12 is the intercept, kA 12 Draw two straight lines for the slope, and the ordinate of the intersection of the two straight lines is the AC crosstalk noise voltage U cross , which is related to the output voltage U s11 and U s12 The difference between them is kA 11 E in andkA 12 E in , so the relationship between these parameters should satisfy

[0051]

[0052] Based on this, the AC crosstalk noise voltage U can be calculated cross and the internal electrostatic field strength E in .

[0053] Furthermore, the sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength are used for synchronous correction compensation to obtain the external electric field strength. Step S500 of the embodiment of the present application also includes:

[0054] Step S510: When the MEMS resonant electric field sensor is in real-time working state, measuring the real-time movable structure vibration amplitude and the real-time sensing terminal output voltage;

[0055] Step S520: Calculate and obtain the external electric field strength using the sensitivity coefficient, AC crosstalk noise voltage, internal electrostatic field strength, real-time movable structure vibration amplitude, and real-time sensing end output voltage.

[0056] Specifically, the synchronous correction compensation refers to the process of measuring the real-time movable structure vibration amplitude and real-time sensing end output voltage of the sensor when the sensor is in a working state, and calculating the external electric field strength using the sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength obtained above.

[0057] Specifically, the step of changing the external electric field to determine the output information of the MEMS resonant electric field sensor at the first operating frequency and obtaining the first output information includes:

[0058] By formula

[0059]

[0060] Calculate the measured external electric field strength E ex , where A is the real-time movable structure vibration amplitude, U s is the real-time sensing output voltage, k is the sensitivity coefficient, Ucross is the AC crosstalk noise voltage, E in is the internal electrostatic field strength.

[0061] Furthermore, before obtaining the first output information by changing the external electric field to determine the output information of the MEMS resonant electric field sensor at the first operating frequency, step S100 in the embodiment of the present application further includes:

[0062] Step S140: obtaining the sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength of the MEMS resonant electric field sensor;

[0063] Step S150: determining whether the sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength parameters are valid;

[0064] Step S160: when invalid, measuring the first output information by changing the external electric field;

[0065] Step S170: When valid, directly enter the synchronous correction compensation operation.

[0066] Specifically, the operation described in this step is performed before the step S100, which is a verification process to determine the sensitivity coefficient k, the AC crosstalk noise voltage U cross and the internal electrostatic field strength E in Whether the parameters are valid, when the sensitivity coefficient k, AC crosstalk noise voltage U cross and the internal electrostatic field strength E in When the parameters are valid, directly perform the calculation in step S500 to obtain the external electric field strength. When the sensitivity coefficient k, AC crosstalk noise voltage U cross and the internal electrostatic field strength E in When the parameters are invalid, step S100 is performed to obtain the first output information by changing the external electric field.

[0067] Furthermore, the vibration amplitude of the movable structure is an absolute value of the vibration amplitude of the movable structure of the MEMS resonant electric field sensor, or a product of the absolute value and a constant.

[0068] In summary, the sensitivity drift compensation method of a MEMS resonant electric field sensor provided in the embodiment of the present application has the following technical effects:

[0069] Because the two output quantities of the sensor's movable structure vibration amplitude and the induction end output voltage are used to obtain parameter information such as sensitivity coefficient, AC crosstalk noise voltage and internal electrostatic field strength, real-time and rapid compensation of sensitivity drift is achieved based on these parameters, and the sensor characteristic parameters are obtained through a combined calibration method of special external electric field response curve calibration and multi-working state zero input calibration, and the sensor output results are compensated in real time and rapidly, effectively reducing the measurement error caused by sensitivity drift. The technical effect has broad application prospects in aerospace, meteorological warning, smart grid, security protection, scientific research and other fields.

[0070] Embodiment 2

[0071] like Figure 4 As shown, the present application also provides a structural block diagram of a MEMS resonant electric field sensor based on the sensitivity drift compensation method of the present invention. The sensor of this embodiment mainly includes three parts: a sensitive chip, a sensor storage, and a microprocessor.

[0072] The input signal of the sensitive chip includes at least an excitation signal, and the output signal includes at least a movable structure vibration amplitude and an induction end output voltage, wherein the excitation signal is applied to the sensitive chip by the microprocessor according to instructions. The sensitive chip outputs the movable structure vibration amplitude and the induction end output voltage signal to the microprocessor, and at the same time, the microprocessor retrieves the calibrated sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength information stored in the sensor storage, and comprehensively calculates and outputs the external electric field value.

[0073] A sensitivity drift compensation method for a MEMS resonant electric field sensor provided in an embodiment of the present invention is applied to a MEMS resonant electric field sensor, wherein the output information of the MEMS resonant electric field sensor includes a vibration amplitude of a movable structure and an output voltage of a sensing end, wherein the method includes: by changing an external electric field, measuring the output information of the MEMS resonant electric field sensor at a first working frequency to obtain first output information, wherein the first output information at least includes a vibration amplitude of a first movable structure, an output voltage of a first sensing end, and an output voltage of a second sensing end, wherein the output voltage of the first sensing end and the output voltage of the second sensing end correspond to an external electric field value; calculating and obtaining a sensitivity coefficient according to the external electric field value and the first output information; when setting the external electric field to zero, measuring the output information of the MEMS resonant electric field sensor under different working conditions to obtain second output information; calculating and obtaining an AC crosstalk noise voltage and an internal electrostatic field strength according to the sensitivity coefficient and the second output information; performing synchronous correction compensation using the sensitivity coefficient, the AC crosstalk noise voltage, and the internal electrostatic field strength to obtain an external electric field strength. The technical problem in the prior art that the sensitivity of the MEMS resonant electric field sensor drifts due to the influence of other factors is solved, and the characteristic parameters of the sensor are obtained through a combined calibration method of a special external electric field response curve calibration and a multi-working state zero input calibration, and the sensor output results are compensated in real time and quickly, so as to effectively reduce the measurement error caused by the sensitivity drift.

[0074] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A sensitivity drift compensation method for a MEMS resonant electric field sensor, applied to a MEMS resonant electric field sensor, wherein the output information of the MEMS resonant electric field sensor includes the vibration amplitude of the movable structure and the output voltage of the sensing end, wherein: The method comprises: By changing the external electric field, the output information of the MEMS resonant electric field sensor at the first operating frequency is measured to obtain first output information, wherein the first output information at least includes the vibration amplitude of the first movable structure, the output voltage of the first sensing end, and the output voltage of the second sensing end, wherein the output voltage of the first sensing end and the output voltage of the second sensing end correspond to the external electric field value; Calculate and obtain a sensitivity coefficient according to the external electric field value and the first output information; When the external electric field is set to zero, the output information of the MEMS resonant electric field sensor under different working conditions is measured to obtain second output information; According to the sensitivity coefficient and the second output information, an AC crosstalk noise voltage and an internal electrostatic field strength are calculated; The sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength are used to perform synchronous correction compensation to obtain external electric field strength.

2. The method of claim 1, wherein: The step of measuring the output information of the MEMS resonant electric field sensor at a first operating frequency by changing the external electric field to obtain the first output information includes: Measuring a vibration amplitude of a movable structure of the MEMS resonant electric field sensor at the first operating frequency to obtain the first movable structure vibration amplitude; Under the first operating frequency, the corresponding induction terminal output voltages under at least two external electric field values ​​of different strengths are measured to obtain an external electric field response output voltage, wherein the external electric field response output voltage at least includes the first induction terminal output voltage and the second induction terminal output voltage, and the external electric field value at least includes a first external electric field and a second external electric field, wherein the first induction terminal output voltage corresponds to the first external electric field, and the second induction terminal output voltage corresponds to the second external electric field; The vibration amplitude of the first movable structure, the output voltage of the first sensing end, and the output voltage of the second sensing end are recorded to obtain the first output information.

3. The method of claim 2, wherein: The step of calculating a sensitivity coefficient according to the external electric field value and the first output information includes: Using the formula: The sensitivity coefficient k is calculated, where A0 is the vibration amplitude of the first movable structure, E ex01 is the first external electric field, E ex02 is the second external electric field, U s01 is the output voltage of the first sensing terminal, U s02 The second sensing terminal outputs a voltage.

4. The method of claim 1, wherein: When the external electric field is set to zero, the output information of the MEMS resonant electric field sensor under different working conditions is measured to obtain the second output information, including: Setting the external electric field to zero to obtain at least two different working conditions, when there are two working conditions, they are a first working condition and a second working condition, wherein the first working condition is different from the second working condition; When the external electric field is zero and the working condition is the first working condition, measuring the output information of the MEMS resonant electric field sensor including the vibration amplitude of the second movable structure and the output voltage of the third sensing end; When the external electric field is zero and the working condition is the second working condition, measuring the output information of the MEMS resonant electric field sensor including the vibration amplitude of the third movable structure and the output voltage of the fourth sensing end; The vibration amplitude of the second movable structure, the vibration amplitude of the third movable structure, the output voltage of the third sensing end, and the output voltage of the fourth sensing end are recorded to constitute the second output information.

5. The method of claim 4, wherein: The step of calculating the AC crosstalk noise voltage and the internal electrostatic field strength according to the sensitivity coefficient and the second output information includes: Using the formula Calculate and obtain the AC crosstalk noise voltage U cross , internal electrostatic field strength E in , where A 11 is the vibration amplitude of the second movable structure, A 12 is the vibration amplitude of the third movable structure, U s11 is the output voltage of the third induction terminal, U s12 is the output voltage of the fourth sensing terminal, and k is the sensitivity coefficient.

6. The method of claim 1, wherein: The method of using the sensitivity coefficient, the AC crosstalk noise voltage, and the internal electrostatic field strength to perform synchronous correction compensation to obtain the external electric field strength includes: When the MEMS resonant electric field sensor is in real-time working state, measuring the real-time movable structure vibration amplitude and the real-time sensing end output voltage; The external electric field strength is obtained by calculation using the sensitivity coefficient, the AC crosstalk noise voltage, the internal electrostatic field strength, the real-time movable structure vibration amplitude, and the real-time sensing end output voltage.

7. The method of claim 6, wherein: The method of calculating and obtaining the external electric field strength by using the sensitivity coefficient, AC crosstalk noise voltage, internal electrostatic field strength, real-time movable structure vibration amplitude, and real-time sensing end output voltage includes: By formula Calculate the measured external electric field strength E ex , where A is the real-time movable structure vibration amplitude, U s is the real-time sensing output voltage, k is the sensitivity coefficient, U cross is the AC crosstalk noise voltage, E in is the internal electrostatic field strength.

8. The method of claim 1, wherein: The method of measuring the output information of the MEMS resonant electric field sensor at the first operating frequency by changing the external electric field and obtaining the first output information includes: Obtaining a sensitivity coefficient, an AC crosstalk noise voltage, and an internal electrostatic field strength of the MEMS resonant electric field sensor; Determining whether the sensitivity coefficient, AC crosstalk noise voltage, and internal electrostatic field strength parameters are valid; When it is invalid, measuring the first output information by changing the external electric field; When valid, directly enter the synchronous correction compensation operation.

9. The method of claim 4, wherein: The working conditions are one or more combinations of working frequency, temperature, pressure, humidity, stress, and natural environmental factors.

10. The method of claim 1, wherein: The vibration amplitude of the movable structure is an absolute value of the vibration amplitude of the movable structure of the MEMS resonant electric field sensor, or The product of an absolute value and a constant.

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