Particle size detection device and detection method thereof, and photolithography machine

Abstract

The application provides a particle size detection device and a detection method thereof and a photolithography machine. The particle size detection device comprises an illumination unit and a detection unit. The illumination unit is used to provide a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam enter the detection unit after being scattered by a structure to be detected, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam, that is, the particle size of the structure to be detected is detected by combining the main detection beam and the auxiliary detection beam. Thus, the defects in the detection of the main detection beam can be compensated by the auxiliary detection beam, thereby solving the problem that the particle size cannot be effectively corresponded to the obtained image due to the size of the particle, the size range of the particle or the intensity of the wavelength absorbed by the particle.

Description

Technical Field

[0001] This invention relates to the field of photolithography, and particularly to a particle size detection device and method, and a photolithography machine. Background Technology

[0002] In the fabrication process of semiconductor integrated circuits or flat panel display devices, in order to maintain a high product yield, defect (e.g., particle) detection is required before exposing silicon wafers or glass substrates to control contamination.

[0003] Figure 1 This is a schematic diagram illustrating the detection principle of a particle size detection device, such as... Figure 1 As shown, firstly, the illumination beam 11 emitted from the light source 10 is scattered by foreign objects on the object to be detected 30, and the scattered signal light 12 enters the detector 20. The detector 20 detects the particle size of the object to be detected 30 based on the scattered signal light 12. However, the particle size detection device suffers from particle image crosstalk, which severely affects the signal-to-noise ratio of the detection signal and thus the detection accuracy.

[0004] To address the above problems, improvements were made to the particle size detection device, such as... Figure 2 As shown, by controlling the incident angle α of the illumination beam 11, the receiving angle b of the detector 20, and constraining the illumination field of view, the suppression of particle image crosstalk and pattern crosstalk was analyzed, thereby solving the aforementioned problems of particle image crosstalk and pattern crosstalk. However, when using this scheme, the particle size detection device needs to strictly constrain the incident angle α and the receiving angle b. However, referring to... Figure 3 and Figure 4 As the detection range of particles increases, the strict constraints of the configuration lead to the following problems:

[0005] (1) Insufficient detector dynamic range: Under normal circumstances, the scattering efficiency (or relative intensity) of a particle is roughly linearly related to the square of the particle diameter D (quadratic particle size). When the size range of the particles in the object to be detected increases, it will exceed the dynamic range of the detector, resulting in a saturated image corresponding to the large particles in the object to be detected. When a saturated image is present, the conventional method is to reduce the incident light intensity of the illumination beam and rescan. However, this method will cause the detection time to increase exponentially;

[0006] (2) When the particles of the object to be tested have a strong absorption of the illumination beam, the test results cannot reflect the true influence of the particles.

[0007] (3) When the particle size detection device requires a small numerical aperture (NA) in the imaging optical path, the scattering efficiency shows an oscillating upward trend as the size of the particles of the object to be detected increases (e.g., Figure 3 As shown), this leads to increased errors in determining particle size. With specific particle size detection device configurations, significant errors will exist in the detection results (for example, if the particle size is determined to be 15μm, the error between the detected particle size and the actual particle size can be as high as 15%). Figure 4 (As shown).

[0008] Therefore, although existing particle size detection devices can solve the problems of particle image crosstalk and pattern crosstalk, there are still limitations due to specific configurations, which prevent some particle sizes from effectively corresponding to the acquired images. Summary of the Invention

[0009] The purpose of this invention is to provide a particle size detection device and method, as well as a lithography machine, to solve the problem that particle size and acquired images cannot be effectively correlated.

[0010] To address the aforementioned technical problems, the present invention provides a particle size detection device, comprising an illumination unit and a detection unit. The illumination unit provides a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam are scattered by the structure to be detected and then enter the detection unit to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam.

[0011] Optionally, in the particle size detection device, the illumination unit includes a light source module and a beam splitting module. The light source module provides a light beam, which is then split into the main detection beam and the auxiliary detection beam by the beam splitting module.

[0012] Optionally, in the particle size detection device, the particle size detection device further includes a control unit, which is used to adjust the incident angle, wavelength and light intensity of the main detection beam and the auxiliary detection beam when they are incident on the structure to be detected according to predetermined conditions.

[0013] Optionally, in the particle size detection device, the incident angle of the main detection beam when it is incident on the structure to be detected is different from the incident angle of the auxiliary detection beam when it is incident on the structure to be detected, the wavelength of the main detection beam is the same as the wavelength of the auxiliary detection beam, and the light intensity of the main detection beam is the same as the light intensity of the auxiliary detection beam.

[0014] Optionally, in the particle size detection device, the incident angle of the main detection beam when it is incident on the structure to be detected is the same as the incident angle of the auxiliary detection beam when it is incident on the structure to be detected, the wavelength of the main detection beam is different from the wavelength of the auxiliary detection beam, and the light intensity of the main detection beam is the same as the light intensity of the auxiliary detection beam.

[0015] Optionally, in the particle size detection device, the incident angle of the main detection beam when it is incident on the structure to be detected is the same as the incident angle of the auxiliary detection beam when it is incident on the structure to be detected, the wavelength of the main detection beam is the same as the wavelength of the auxiliary detection beam, and the light intensity of the main detection beam is different from that of the auxiliary detection beam.

[0016] Optionally, in the particle size detection device, the predetermined conditions include at least one of particle detection accuracy, particle absorption rate, and particle size.

[0017] Optionally, in the particle size detection device, the detection unit includes a detector, the photosensitive surface of which faces the structure to be detected, for receiving the main detection beam and the auxiliary detection beam scattered by the structure to be detected, and for detecting the particle size of the structure to be detected based on the main detection beam and the auxiliary detection beam.

[0018] Optionally, in the particle size detection device, the detection unit further includes a reflection module and at least two imaging modules. The reflection module is used to reflect the main detection beam and the auxiliary detection beam scattered by the structure to be detected, so that the main detection beam and the auxiliary detection beam are reflected to two different imaging modules respectively, and the main detection beam and the auxiliary detection beam are converged to different positions of the photosensitive surface of the detector by the two different imaging modules respectively.

[0019] Optionally, in the particle size detection device, the receiving angle of the detection unit when receiving the main detection beam scattered by the structure to be detected is the same as the receiving angle when receiving the auxiliary detection beam.

[0020] Optionally, in the particle size detection device, the structure to be detected includes a photomask, a glass substrate, or a silicon wafer.

[0021] Based on the same inventive concept, the present invention also provides a particle size detection method, comprising:

[0022] The main detection beam and auxiliary detection beam are provided through the illumination unit; and...

[0023] The main detection beam and the auxiliary detection beam are incident on the structure to be detected, and the main detection beam and the auxiliary detection beam are scattered by the structure to be detected and then enter the detection unit, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam.

[0024] Optionally, in the particle size detection method, after providing the main detection beam and the auxiliary detection beam, the method further includes: adjusting the incident angle, wavelength, and light intensity of the main detection beam and the auxiliary detection beam when they are incident on the structure to be detected according to predetermined conditions.

[0025] Optionally, in the particle size detection method, the predetermined conditions include at least one of particle detection accuracy, particle absorption rate, and particle size.

[0026] Based on the same inventive concept, the present invention also provides a lithography machine, which includes the particle size detection device as described above.

[0027] In the particle size detection device and method and lithography machine provided by the present invention, the particle size detection device includes an illumination unit and a detection unit. The illumination unit is used to provide a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam enter the detection unit after being scattered by the structure to be detected, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam. That is, the particle size of the structure to be detected is detected by combining the main detection beam and the auxiliary detection beam. Thus, the auxiliary detection beam can make up for the defects of the main detection beam detection, thereby solving the problem that the particle size and the acquired image cannot be effectively matched due to the particle size, particle size range, or intensity of particle absorption wavelength. Attached Figure Description

[0028] Figures 1-2 This is a schematic diagram of the detection principle of a particle size detection device in the prior art;

[0029] Figure 3 This is a schematic diagram illustrating the relationship between relative scattering linearity and particle size in existing technologies;

[0030] Figure 4 This is a schematic diagram illustrating the error between the particle size in the detection results of existing technology and the actual particle size;

[0031] Figure 5 This is a schematic diagram of the detection principle of the particle size detection device provided in Embodiment 1 of the present invention;

[0032] Figure 6This is a schematic diagram showing the relationship between the relative scattering efficiency of the main detection beam and the particle size in the particle size detection device provided in Embodiment 1 of the present invention.

[0033] Figure 7 This is a schematic diagram showing the relationship between the relative scattering efficiency of the main detection beam and the square of the particle size in the particle size detection device provided in Embodiment 1 of the present invention.

[0034] Figure 8 This is a schematic diagram illustrating the error when judging the size of particles using the main detection beam in Embodiment 1 of the present invention;

[0035] Figure 9 This is a schematic diagram illustrating the error when determining the particle size using an auxiliary detection beam in Embodiment 1 of the present invention.

[0036] Figure 10 This is a schematic diagram of the detection principle of the particle size detection device provided in Embodiment 2 of the present invention;

[0037] Figure 11 This is a schematic diagram showing the relationship between the relative scattering efficiency of particles of various materials and the square of the particle size.

[0038] Figure 12 This is a schematic diagram showing the relationship between the scattering efficiency and particle size of the particle size detection device provided in Embodiment 2 of the present invention;

[0039] Figure 13 This is a schematic diagram of the detection principle of the particle size detection device provided in Embodiment 3 of the present invention;

[0040] Figure 14 This is a schematic diagram showing the relationship between the scattering efficiency and particle size of the particle size detection device provided in Embodiment 3 of the present invention;

[0041] Figure 15 This is a schematic flowchart of the particle size detection method provided in Embodiment 4 of the present invention;

[0042] The reference numerals in the attached figures are explained as follows:

[0043] 10 - Light source; 11 - Illumination beam; 12 - Scattered signal light;

[0044] 20-Detector;

[0045] 30 - Object to be detected;

[0046] 100 - Illumination unit; 101 - Light source module; 102 - Beam splitting module; 1021, 1021' - Main detection beam; 1022, 1022' - Auxiliary detection beam;

[0047] 200 - Detection unit; 201 - Detector; 202a, 202b - Imaging modules; 203 - Reflection module; 300 - Structure to be detected. Detailed Implementation

[0048] The particle size detection device and method, as well as the lithography machine proposed in this invention, will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this invention.

[0049] The core idea of ​​this application is to provide a particle size detection device and method, and a lithography machine. The particle size detection device includes an illumination unit and a detection unit. The illumination unit provides a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam are scattered by the structure under test and then enter the detection unit to detect the particle size of the structure under test. That is, the particle size of the structure under test is detected by combining the main detection beam and the auxiliary detection beam, thereby compensating for the defects of the main detection beam. Furthermore, the detection unit detects the particle size of the structure under test by measuring the light intensity of the main detection beam and the auxiliary detection beam scattered by the structure under test. The light intensity of the main detection beam scattered by the structure under test is the product of the scattering efficiency and the light intensity of the main detection beam incident on the structure under test, and the light intensity of the auxiliary detection beam scattered by the structure under test is the product of the scattering efficiency and the light intensity of the auxiliary detection beam incident on the structure under test.

[0050] The following will be combined with the appendix Figure 5-15 The particle size detection device and detection method, as well as the lithography machine, proposed in the embodiments of the present invention are further described below.

[0051] Example 1

[0052] refer to Figure 5 This is a schematic diagram illustrating the detection principle of the particle size detection device provided in Embodiment 1 of the present invention. Figure 5As shown, the particle size detection device includes an illumination unit 100 and a detection unit 200. The illumination unit 100 includes a light source module 101 and a beam splitting module 102. The light source module 101 provides a light beam 1011, which can be, for example, a laser light source or an LED light source, with a wavelength of, for example, 400nm to 760nm, such as 400nm, 500nm, 650nm, or 700nm. The light beam 1011 provided by the light source module 101 is split into a main detection beam 1021 and an auxiliary detection beam 1022 by the beam splitting module 102. Here, the number of auxiliary detection beams 1022 is not limited to one; it can be two or more, and can be set according to the configuration of the particle size detection device and the required detection accuracy. In this embodiment, one auxiliary detection beam is used as an example. Furthermore, the main detection beam 1021 and the auxiliary detection beam 1022 enter the detection unit 200 after being scattered by the structure to be detected 300, so as to detect the particle size of the structure to be detected 300 by the main detection beam 1021 and the auxiliary detection beam 1022.

[0053] The particle size detection device further includes a control unit (not shown), which is used to adjust the incident angle, wavelength, and light intensity of the main detection beam 1021 and the auxiliary detection beam 1022 when they are incident on the structure to be detected 300 according to predetermined conditions. The predetermined conditions include at least one of particle detection accuracy, particle absorption rate, and particle size.

[0054] In this embodiment, the incident angle 'a' of the main detection beam 1021 when it is incident on the structure 300 to be detected is different from the incident angle 'b' of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected. Specifically, the incident angle 'a' of the main detection beam 1021 when it is incident on the structure 300 to be detected can be 70° to 77°, for example, 70°, 75°, or 77°. The incident angle 'b' of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected can be 60° to 71°, for example, 60° or 65°, but is not limited to these. Of course, the main detection beam 1021 and the auxiliary detection beam 1022 can also be configured with other incident angles; for example, the incident angle of the main detection beam 1021 or the auxiliary detection beam 1022 can also be 20° to 50°.

[0055] In this embodiment, the wavelength of the main detection beam 1021 is the same as the wavelength of the auxiliary detection beam 1022. The wavelengths of the main detection beam 1021 and the auxiliary detection beam 1022 can be, for example, 620nm to 760nm, but are not limited to this; other wavelengths, such as 400nm to 500nm, can also be used. Furthermore, the light intensity of the main detection beam 1021 is the same as the light intensity of the auxiliary detection beam 1022.

[0056] Additionally, the structure to be tested 300 can be a photomask, a glass substrate, or a silicon wafer. Figure 5 In terms of location, the particles can be located on the upper surface of the structure to be tested 300 or in the structure to be tested 300. In this embodiment, the example is that the particles are located on the upper surface of the structure to be tested 300.

[0057] The detection unit 200 includes a detector 201, the photosensitive surface of which faces the structure to be detected 300. The detector 201 receives a main detection beam 1021' and an auxiliary detection beam 1022' scattered by the structure to be detected 300, and detects the particle size of the structure to be detected 300 based on the main detection beam 1021' and the auxiliary detection beam 1022'. The detector 201 can be a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) camera.

[0058] Furthermore, the detection unit 200 also includes a reflection module 203 and at least two imaging modules 202a and 202b. The reflection module 203 is used to reflect the main detection beam 1021' and the auxiliary detection beam 1022' scattered by the structure to be detected 300, so that the main detection beam 1021' and the auxiliary detection beam 1022' are reflected to two different imaging modules 202a and 202b, respectively. The reflection module 203 can also be used to separate the reflected light generated on the surface of the structure to be detected 300 from the main detection beam 1021' (or auxiliary detection beam 1022') generated by particle scattering.

[0059] Specifically, the reflection module 203 can be a reflection prism, and the surface area of ​​the reflection prism is divided into a light-transmitting area and a reflective area. The main detection beam 1021' and the auxiliary detection beam 1022', scattered by the structure under test 300, are incident from the light-transmitting area of ​​the reflection prism, respectively, and after reflection within the prism, are incident on the imaging modules 202a and 202b, respectively. The reflected light generated on the surface of the structure under test 300 (reflected light other than the main and auxiliary detection beams) is incident on the reflective area and reflected outside the receiving area of ​​the detector 201, thereby separating the reflected light from the main detection beam 1021' and the auxiliary detection beam 1022', ensuring that the reflected light does not enter the detector 201, and thus avoiding any impact on detection accuracy. Furthermore, the parameters of the reflecting prism (e.g., the relative position of the reflecting prism and the structure to be detected, or the angle between the inclined plane of the reflecting prism and the normal) can be configured according to the incident angle α of the main detection beam 1021, and the receiving angles α' and b' when the detection unit 200 receives the main detection beam 1021' and the auxiliary detection beam 1022' scattered by the structure to be detected 300. In addition, the reflecting module 203 is not limited to a reflecting prism; other optical elements, optical components, optomechanical elements, or optomechanical components can be used to replace the reflecting prism according to the actual configuration, achieving the same function as the reflecting prism.

[0060] Furthermore, after the main detection beam 1021' and the auxiliary detection beam 1022' are reflected by the reflection module 203 to two different imaging modules 202a and 202b respectively, the main detection beam 1021' and the auxiliary detection beam 1022' are converged by the two different imaging modules 202a and 202b to different positions on the photosensitive surface of the detector 201. The number of imaging modules is not limited to two; the number of imaging modules can match the total number of the main detection beam 1021 and the auxiliary detection beam 1022.

[0061] The detector 201 can convert the received optical signals of the main detection beam 1021' and the auxiliary detection beam 1022' into electrical signals, and can output electrical signals to the computer component. Those skilled in the art will understand that the detection unit 200 can be connected to the computer component, which receives and processes the electrical signals emitted by the detection unit 200 to obtain the granularity of the structure 300 to be detected.

[0062] Preferably, the detection unit 200 receives the same angle α' when receiving the main detection beam 1021' scattered by the structure under test 300 and the same angle b' when receiving the auxiliary detection beam 1022, to simplify the configuration of the particle size detection device. The angles α' and b' can be 53° to 60°, for example, 60°, but are not limited thereto; this is merely an example.

[0063] refer to Figures 6-9 ,in, Figure 6 This is a schematic diagram showing the relationship between the relative scattering efficiency of the main detection beam and the particle size in the particle size detection device provided in Embodiment 1 of the present invention. Figure 7 This is a schematic diagram showing the relationship between the relative scattering efficiency of the main detection beam and the square of the particle size in the particle size detection device provided in Embodiment 1 of the present invention. Figure 8 This is a schematic diagram illustrating the error when judging the size of particles using the main detection beam in Embodiment 1 of the present invention; Figure 9 This is a schematic diagram illustrating the error when determining particle size using an auxiliary detection beam in Embodiment 1 of the present invention. This is useful when the particle size detection device needs to detect particles with a size of 5μm to 30μm (or any sub-range thereof), and needs to significantly improve the detection accuracy of particle size while ensuring that the error introduced by the detection principle and configuration of the particle size detection device does not exceed 1μm (i.e., the error between the particle size in the detection result and the actual particle size does not exceed 1μm). Figure 6 and Figure 7 As shown, when only the main detection beam 1021 is used to detect the particle size of the structure 300 under test, the relative scattering efficiency (or relative scattering intensity) of particles of different sizes can be fitted to a linear relationship with the square of the particle size. However, the relative scattering efficiency of the particles shows an oscillating upward trend (e.g., ...). Figure 7 As shown in the figure, if the oscillation curve is used as the benchmark, the scattering efficiency and particle size will not correspond uniquely, which will affect the detection accuracy.

[0064] like Figure 8As shown, when judging particle size based on scattering efficiency, under a specific configuration (introduced by the detection principle and configuration of the particle size detection device, the error between the particle size in the detection result and the actual particle size is no greater than 1 μm), for larger particles (e.g., particles with a size greater than or equal to 30 μm), the deviation between the particle size in the detection result and the actual particle size is approximately 5%. For smaller particles (e.g., particles with a size less than or equal to 15 μm), the deviation between the particle size in the detection result and the actual particle size is approximately 15%. Based on this, this embodiment uses a combination of a main detection beam 1021 and an auxiliary detection beam 1022 to detect the particle size of the structure to be detected 300, and sets the incident angle b of the auxiliary detection beam 1022 to be different from the incident angle a of the main detection beam 1021. Figure 9 As shown, for smaller particles (e.g., less than 15 μm), the deviation between the particle size in the detection result and the actual particle size can be controlled to no more than 6%, thereby controlling the deviation between the particle size in the detection result and the actual particle size and thus improving the detection accuracy.

[0065] Based on the same inventive concept, this embodiment also provides a lithography machine, which includes the particle size detection device as described above, and will not be repeated here.

[0066]

Example 2

[0067] refer to Figure 10 , Figure 10 This is a schematic diagram illustrating the detection principle of the particle size detection device provided in Embodiment 2 of the present invention. Figure 10 As shown in the figure, this embodiment provides a particle size detection device, which includes an illumination unit 100 and a detection unit 200. The illumination unit 100 includes a light source module 101 and a beam splitting module 102. The light source module 101 provides a light beam 1011, which is split into a main detection beam 1021 and an auxiliary detection beam 1022 by the beam splitting module 102.

[0068] In this embodiment, the particle size detection device further includes a control unit, which is used to adjust the incident angle, wavelength, and light intensity of the main detection beam and the auxiliary detection beam according to predetermined conditions. The control unit in this second embodiment can be referred to the description of the control unit in the first embodiment, and will not be repeated in this second embodiment.

[0069] The difference between this embodiment and embodiment one is that the incident angle α of the main detection beam 1021 provided by the illumination unit 100 when it is incident on the structure 300 to be detected is the same as the incident angle b of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected; the wavelength of the main detection beam 1021 is different from that of the auxiliary detection beam 1022; and the light intensity of the main detection beam 1021 is the same as that of the auxiliary detection beam 1022. The specific structure of the detection unit 200 will not be described in detail in this embodiment; please refer to the description in embodiment one for details.

[0070] refer to Figure 11 This is a schematic diagram illustrating the relationship between the relative scattering efficiency of particles of various materials and the square of the particle size. For example... Figure 11 As shown, the particles in the structure 300 to be detected contain particles of various materials, and the absorption rates of two different materials for the same wavelength of light beam differ significantly (e.g., greater than 25%). When it is necessary to detect particles of multiple materials, using existing particle size detection devices will severely affect the detection results due to the significant difference in absorption rates of the two different materials for the same wavelength of light beam, thus causing the detection results to fail to reflect the true situation of the particles. Based on this, in this embodiment, the wavelength of the main detection beam 1021 is set to be different from the wavelength of the auxiliary detection beam 1022, so as to calibrate the scattering efficiency through the auxiliary detection beam 1022. For example, the wavelength range of the main detection beam 1021 can be 620nm to 760nm, and the wavelength range of the auxiliary detection beam 1022 can be 400nm to 500nm. This is merely an example; the wavelength range of the main detection beam 1021 and the wavelength range of the auxiliary detection beam 1022 can be configured according to different detection conditions. For example, they can be configured according to the absorption rate (intensity of the particle absorption wavelength) of the particles in the structure to be detected 300.

[0071] Taking a specific parameter as an example, the wavelength of the main detection beam 1021 is 620nm to 760nm. It needs to detect particles of various materials in the structure to be detected 300, and among the particles to be detected, some particles (e.g., special colored latex particles, see reference) are also included. Figure 11 When the main detection beam 1021 exhibits strong absorption, the scattering efficiency will significantly decrease. Therefore, the wavelength of the auxiliary detection beam 1022 can be configured to be 400nm–500nm to calibrate the scattering efficiency, but this is not limited to this; alternatively, the wavelength of the auxiliary detection beam 1022 can be configured to be 350nm–455nm.

[0072] For further information, please refer to... Figure 12 , Figure 12 This is a schematic diagram illustrating the relationship between the scattering efficiency and particle size of the particle size detection device provided in Embodiment 2 of the present invention. Figure 12 As shown, Figure 12 P1 in the graph represents the relationship between scattering efficiency and particle size obtained through the main detection beam 1021, while P2 and P3 represent the relationship between scattering efficiency and particle size obtained through auxiliary detection beams 1022 of different wavelengths. Figure 12 It is known that particles have different absorption rates for light beams of different wavelengths, and their scattering efficiencies also differ. Therefore, in this embodiment, by combining the auxiliary detection beam 1022 with the main detection beam 1021, and setting the wavelength of the auxiliary detection beam 1022 to be different from that of the main detection beam 1021, the scattering efficiency can be calibrated. This allows detection to be performed within a suitable range of scattering efficiency, thereby ensuring that the actual size of the particle effectively corresponds to the acquired image.

[0073] Accordingly, this embodiment also provides a lithography machine, which includes the particle size detection device described above, and will not be repeated here.

[0074]

Example 3

[0075] refer to Figure 13 This is a schematic diagram illustrating the detection principle of the particle size detection device provided in Embodiment 3 of the present invention. Figure 13 As shown in the figure, this embodiment provides a particle size detection device, which includes an illumination unit 100 and a detection unit 200. The illumination unit 100 includes a light source module 101 and a beam splitting module 102. The light source module 101 is used to provide a light beam 1011, and the light beam 1011 provided by the light source module 101 is split into a main detection beam 1021 and an auxiliary detection beam 1022 by the beam splitting module 102.

[0076] In this embodiment, the particle size detection device further includes a control unit, which is used to adjust the incident angle, wavelength, and light intensity of the main detection beam and the auxiliary detection beam according to predetermined conditions. The control unit in this third embodiment can be referred to the description of the control unit in the first embodiment, and will not be repeated in this third embodiment.

[0077] The difference between Embodiment 3 and Embodiment 2 is that the incident angle α of the main detection beam 1021 when it is incident on the structure 300 to be detected is the same as the incident angle b of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected; the wavelength of the main detection beam 1021 is the same as the wavelength of the auxiliary detection beam 1022; and the light intensity of the main detection beam 1021 is different from the light intensity of the auxiliary detection beam 1022. The detection unit in Embodiment 3 can be referred to the description of the detection unit in Embodiment 1, and will not be repeated in Embodiment 3.

[0078] In this embodiment, the incident angle α of the main detection beam 1021 and the incident angle b of the auxiliary detection beam 1022 can be 60° to 70°, but are not limited to this; other incident angles can also be used, and this is only an example. The wavelengths of the main detection beam 1021 and the auxiliary detection beam 1022 can be 400nm to 760nm, but are not limited to this; other wavelengths can also be used, and this is only an example. The light intensity of the main detection beam 1021 and the light intensity of the auxiliary detection beam 1022 can be set by the ratio of the square of the largest particle size to the square of the smallest particle size among the particles to be detected. For example, if the ratio of the square of the size of the largest particle to the square of the size of the smallest particle among the particles to be detected is 400 (i.e., the ratio of the scattering efficiency of the largest particle to the scattering efficiency of the smallest particle is 400), then the light intensity of the auxiliary detection beam 1022 can be set to 1 / 4 of the light intensity of the main detection beam 1021, so that the scattering efficiency of both the largest and smallest particles is within the dynamic range of the detector 201.

[0079] In existing particle size detection devices, when the size range of the particles to be detected is large, the ratio of the square of the largest particle's size to the square of the smallest particle's size exceeds the dynamic range allowed by the detector 201, resulting in scattering efficiency exceeding the dynamic range of the detector 201. Therefore, in this embodiment, the light intensity of the main detection beam 1021 and the auxiliary detection beam 1022 are set to be different. This allows the structure to be detected 300 to be illuminated by the main detection beam 1021 and the auxiliary detection beam 1022 with different light intensities, thereby enabling them to jointly cover the particle size detection range within the dynamic range of the detector 201. Furthermore, the light intensity of the main detection beam 1021 and the auxiliary detection beam 1022 can be configured according to the size range of the particles to be detected.

[0080] Taking a specific parameter as an example, if the size range of the particles to be detected is 5μm to 100μm, then the scattering efficiency of the largest particle (100μm) is approximately 400 times that of the smallest particle (5μm). The intensity of the auxiliary detection beam 1022 can be configured to be 1 / 4 times that of the main detection beam 1021, so that the scattering efficiency of particles of different sizes to be detected is within the dynamic range of the detector 201. (Reference) Figure 14 This is a schematic diagram illustrating the relationship between the scattering efficiency and particle size of the particle size detection device provided in Embodiment 3 of the present invention. Figure 14 As shown, particles with a size of 5μm to 55μm can be detected by the main detection beam 1021 (reference). Figure 14 The Main curve (see reference) shows that particles with a size of 55 μm to 100 μm can be detected by the auxiliary detection beam 1022 (reference). Figure 14 The Support curve (as shown in the figure) indicates that within the dynamic range of detector 201, in a single detection, particles of all sizes of the structure to be detected 300 can be detected by combining the main detection beam 1021 and the auxiliary detection beam 1022. This solves the problem of insufficient detector dynamic range caused by excessively large particle size range, and allows for accurate detection results in a single detection, thus saving detection time.

[0081] Accordingly, this embodiment also provides a lithography machine, which includes the particle size detection device described above, and will not be repeated here.

[0082]

Example 4

[0083] refer to Figure 15 This is a flowchart illustrating the particle size detection method provided in Embodiment 4. Figure 15 As shown, this embodiment four provides a particle size detection method, including:

[0084] Step S1: Provide the main detection beam and auxiliary detection beam through the illumination unit; and,

[0085] Step S2: The main detection beam and the auxiliary detection beam are incident on the structure to be detected, and the main detection beam and the auxiliary detection beam are scattered by the structure to be detected and then enter the detection unit, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam.

[0086] Specifically, in step S1, refer to Figure 5 The illumination unit 100 of the particle size detection device described in this invention can be used to provide the main detection beam 1021 and the auxiliary detection beam 1022.

[0087] Furthermore, after providing the main detection beam 1021 and the auxiliary detection beam 1022, the method further includes: adjusting the incident angle, wavelength, and light intensity of the main detection beam 1021 and the auxiliary detection beam 1022 when incident on the structure to be detected 300 according to predetermined conditions. The predetermined conditions include at least one of particle detection accuracy, particle absorption rate, and particle size.

[0088] Optional, continue to refer to Figure 5The incident angle α of the main detection beam 1021 when it is incident on the structure 300 to be detected is different from the incident angle b of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected. The wavelength of the main detection beam 1021 is the same as the wavelength of the auxiliary detection beam 1022, and the light intensity of the main detection beam 1021 is the same as the light intensity of the auxiliary detection beam 1022. By making the incident angle α of the main detection beam 1021 different from the incident angle b of the auxiliary detection beam 1022, the particle size deviation of the detected structure 300 can be controlled in subsequent steps, thereby improving the detection accuracy.

[0089] Optional, continue to refer to Figure 10 The incident angle α of the main detection beam 1021 when it is incident on the structure 300 to be detected is the same as the incident angle b of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected. The wavelength of the main detection beam 1021 is different from that of the auxiliary detection beam 1022, and the light intensity of the main detection beam 1021 is the same as that of the auxiliary detection beam 1022. By making the wavelength of the main detection beam 1021 different from that of the auxiliary detection beam 1022, particles of various materials can be detected subsequently, thereby solving the problem that the particle size and the acquired image cannot effectively correspond due to the intensity of the wavelength absorbed by the particles.

[0090] Optional, continue to refer to Figure 13 The incident angle α of the main detection beam 1021 when it is incident on the structure 300 to be detected is the same as the incident angle b of the auxiliary detection beam 1022 when it is incident on the structure 300 to be detected. The wavelength of the main detection beam 1021 is the same as the wavelength of the auxiliary detection beam 1022, and the light intensity of the main detection beam 1021 is different from that of the auxiliary detection beam 1022. By making the light intensity of the main detection beam 1021 different from that of the auxiliary detection beam 1022, the problem of insufficient dynamic range of the detector 201 due to the excessively large particle size range being detected can be avoided.

[0091] In step S2, the main detection beam 1021 and the auxiliary detection beam 1022 are incident on the structure to be tested 300, and after being scattered by the structure to be tested 300, the main detection beam 1021 and the auxiliary detection beam 1022 enter the detection unit 200 to detect the particle size of the structure to be tested 300. The detection unit 200 of the particle size detection device of the present invention receives the main detection beam 1021' and the auxiliary detection beam 1022' scattered by the structure to be tested 300, and detects the particle size of the structure to be tested 300 based on the main detection beam 1021' and the auxiliary detection beam 1022'.

[0092] Preferably, the detection unit 200 receives the same angle α' when receiving the main detection beam 1021' scattered by the structure under test 300 and the same angle b' when receiving the auxiliary detection beam 1022', thus simplifying the configuration of the particle size detection device. Other embodiments of this application can also be obtained by combining the above-mentioned multiple embodiments. For example, Embodiment 2 can be combined with Embodiment 1, that is, the incident angle of the main detection beam and the incident angle of the auxiliary detection beam in Embodiment 2 can be different, thereby realizing the detection of particles of various different materials in the structure under test and improving the particle detection accuracy. Furthermore, Embodiments 1, 2, and 3 can be combined, that is, the incident angle of the main detection beam and the incident angle of the auxiliary detection beam in Embodiment 3 can also be different, and the wavelength of the main detection beam and the wavelength of the auxiliary detection beam can also be different.

[0093] In summary, in the particle size detection device and method and lithography machine provided by the present invention, the particle size detection device includes an illumination unit and a detection unit. The illumination unit is used to provide a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam enter the detection unit after being scattered by the structure to be detected, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam. That is, by combining the main detection beam and the auxiliary detection beam, the auxiliary detection beam can make up for the defects of the main detection beam detection, thereby solving the problem that the particle size and the acquired image cannot be effectively matched due to the particle size, particle size range, or intensity of particle absorption wavelength.

[0094] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A particle size detection device, characterized in that, It includes an illumination unit and a detection unit. The illumination unit is used to provide a main detection beam and an auxiliary detection beam. The main detection beam and the auxiliary detection beam are scattered by the structure to be detected and then enter the detection unit so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam. The particle size detection device further includes a control unit, which is used to adjust the incident angle, wavelength and light intensity of the main detection beam and the auxiliary detection beam when they are incident on the structure to be detected according to predetermined conditions. The predetermined conditions include at least one of particle detection accuracy, particle absorption rate and particle size. The control unit is used for: Based on the detection accuracy of the particles in the structure to be detected, the incident angle of the main detection beam when it is incident on the structure to be detected is controlled to be different from that of the auxiliary detection beam when it is incident on the structure to be detected, the wavelength of the main detection beam is the same as that of the auxiliary detection beam, and the light intensity of the main detection beam is the same as that of the auxiliary detection beam. Based on the absorptivity of the particles in the structure to be tested, the incident angle of the main detection beam when it is incident on the structure to be tested is controlled to be the same as the incident angle of the auxiliary detection beam when it is incident on the structure to be tested, the wavelength of the main detection beam is different from the wavelength of the auxiliary detection beam, and the light intensity of the main detection beam is the same as the light intensity of the auxiliary detection beam. as well as Based on the size of the particles in the structure to be tested, the incident angle of the main detection beam when it is incident on the structure to be tested is controlled to be the same as that of the auxiliary detection beam when it is incident on the structure to be tested. The wavelength of the main detection beam is the same as that of the auxiliary detection beam, and the light intensity of the main detection beam is different from that of the auxiliary detection beam. The light intensity of the main detection beam and the light intensity of the auxiliary detection beam are set by the ratio of the square of the size of the largest particle in the structure to be tested to the square of the size of the smallest particle.

2. The particle size detection device as described in claim 1, characterized in that, The illumination unit includes a light source module and a beam splitting module. The light source module provides a light beam, which is then split into the main detection beam and the auxiliary detection beam by the beam splitting module.

3. The particle size detection device as described in any one of claims 1 to 2, characterized in that, The detection unit includes a detector with its photosensitive surface facing the structure to be detected. The detector is used to receive the main detection beam and the auxiliary detection beam scattered by the structure to be detected, and to detect the particle size of the structure to be detected based on the main detection beam and the auxiliary detection beam.

4. The particle size detection device as described in claim 3, characterized in that, The detection unit further includes a reflection module and at least two imaging modules. The reflection module is used to reflect the main detection beam and the auxiliary detection beam scattered by the structure to be detected, so that the main detection beam and the auxiliary detection beam are reflected to two different imaging modules respectively. The main detection beam and the auxiliary detection beam are converged to different positions of the photosensitive surface of the detector by the two different imaging modules respectively.

5. The particle size detection device according to any one of claims 1 to 2, characterized in that, The receiving angle of the detection unit when receiving the main detection beam scattered by the structure under test is the same as the receiving angle when receiving the auxiliary detection beam.

6. A particle size detection method, characterized in that, include: The main detection beam and auxiliary detection beam are provided through the illumination unit; as well as, The main detection beam and the auxiliary detection beam are incident on the structure to be detected, and the main detection beam and the auxiliary detection beam are scattered by the structure to be detected and then enter the detection unit, so as to detect the particle size of the structure to be detected by the main detection beam and the auxiliary detection beam; After providing the main detection beam and the auxiliary detection beam, the method further includes: adjusting the incident angle, wavelength, and light intensity of the main detection beam and the auxiliary detection beam when they are incident on the structure to be detected according to predetermined conditions, wherein the predetermined conditions include at least one of particle detection accuracy, particle absorption rate, and particle size; The step of adjusting the incident angle, wavelength, and light intensity of the main detection beam and the auxiliary detection beam when incident on the structure to be detected according to predetermined conditions includes: Based on the detection accuracy of the particles in the structure to be detected, the incident angle of the main detection beam when it is incident on the structure to be detected is controlled to be different from that of the auxiliary detection beam when it is incident on the structure to be detected, the wavelength of the main detection beam is the same as that of the auxiliary detection beam, and the light intensity of the main detection beam is the same as that of the auxiliary detection beam. Based on the absorptivity of the particles in the structure to be detected, the incident angle of the main detection beam when it is incident on the structure to be detected is controlled to be the same as the incident angle of the auxiliary detection beam when it is incident on the structure to be detected; the wavelength of the main detection beam is different from the wavelength of the auxiliary detection beam; and the light intensity of the main detection beam is the same as the light intensity of the auxiliary detection beam. Based on the size of the particles in the structure to be tested, the incident angle of the main detection beam when it is incident on the structure to be tested is controlled to be the same as that of the auxiliary detection beam when it is incident on the structure to be tested. The wavelength of the main detection beam is the same as that of the auxiliary detection beam, and the light intensity of the main detection beam is different from that of the auxiliary detection beam. The light intensity of the main detection beam and the light intensity of the auxiliary detection beam are set by the ratio of the square of the size of the largest particle in the structure to be tested to the square of the size of the smallest particle.

7. A lithography machine, characterized in that, Includes the particle size detection device as described in any one of claims 1 to 5.

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