Particle beam device with deflection unit

Abstract

The present invention relates to a particle beam device for imaging, analyzing and / or processing an object. The particle beam device comprises: a first particle beam generator, wherein the first particle beam generator has a first generator beam axis, wherein the optical axis of the particle beam device is the same as the first generator beam axis; a second particle beam generator, wherein the second particle beam generator has a second generator beam axis, wherein the optical axis and the second generator beam axis are arranged at an angle different from 0° and 180°; a deflection unit, wherein the deflection unit has a first opening and a second opening different from the first opening, wherein the optical axis extends through the first opening, wherein the second generator beam axis extends through the second opening; an objective lens for focusing the first particle beam or the second particle beam onto the object, wherein the optical axis extends through the objective lens; and at least one detector for detecting interacting particles and / or interacting radiation.

Description

Technical Field

[0001] The present invention relates to a particle beam device for imaging, analyzing and / or processing an object. The particle beam device according to the present invention has a deflection unit. In particular, the particle beam device can be an ion beam device and / or an electron beam device. Background Art

[0002] Electron beam devices, in particular scanning electron microscopes (hereinafter also SEM) and / or transmission electron microscopes (hereinafter also TEM), are used to examine objects (also called specimens) in order to gain insights into their properties and behavior under certain conditions.

[0003] In SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by a beam generator and focused on the object to be inspected by means of a beam guidance system. The objective lens is used for focusing purposes. The primary electron beam is guided on the surface of the object to be inspected by means of a deflection device. This is also called scanning. The area scanned by the primary electron beam is also called a scanning area. During scanning, the electrons of the primary electron beam interact with the object to be inspected. Interaction particles and / or interaction radiation appear due to this interaction. For example, the interaction particles are electrons. In particular, the object emits electrons (so-called secondary electrons), and the electrons of the primary electron beam are backscattered at the object (so-called backscattered electrons). The interaction particles form a so-called secondary particle beam and are detected by at least one particle detector. The particle detector generates a detection signal for generating an image of the object. Thus, an image of the object to be inspected is obtained. For example, the interaction radiation is X-ray radiation or cathode ray light. At least one radiation detector is used to detect the interaction radiation.

[0004] In the case of TEM, a primary electron beam is also generated with the aid of a beam generator and guided to the object to be inspected with the aid of a beam guiding system. The primary electron beam passes through the object to be inspected. When the primary electron beam passes through the object to be inspected, the electrons of the primary electron beam interact with the material of the object to be inspected. The electrons that pass through the object to be inspected are imaged onto a luminous screen or onto a detector (for example in the form of a camera) by a system including an objective lens. For example, the above-mentioned system further includes a projection lens. Imaging can also be performed in the scanning mode of the TEM. This type of TEM is called STEM. In addition, it can be provided that electrons backscattered at the object to be inspected and / or secondary electrons emitted by the object to be inspected are detected with the aid of at least one additional detector in order to image the object to be inspected.

[0005] It is known to combine the functionality of STEM and SEM in a single particle beam device. Thus, it is possible to use this particle beam device to perform an inspection of an object using the SEM functionality and / or the STEM functionality.

[0006] Furthermore, particle beam devices in the form of ion beam columns are known. An ion beam generator arranged in the ion beam column is used to generate ions for treating an object. For example, a gas can be used to ablate material of the object or to apply material to the object during treatment. Additionally or alternatively, ions are used for imaging.

[0007] In addition, the prior art has disclosed the practice of using electrons on the one hand and ions on the other hand to analyze and / or process objects in particle beam devices. For example, an electron beam column with SEM function is arranged at the particle beam device. In addition, the ion beam column further explained above is arranged at the particle beam device. The electron beam column with SEM function is particularly used for further checking processed or unprocessed objects, and is also used for processing objects.

[0008] Particle beam generators in the form of electron guns are known in the prior art. For example, an electron gun is a thermionic source that emits electrons when heated. Alternatively, an electron gun may be a field emission source that emits electrons when a strong electric field is applied to it.

[0009] Thermionic sources use pointed emitters such as tungsten filaments, single crystals or sintered composites of lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). If these materials are heated to a sufficiently high temperature, the electrons of the material receive enough energy to overcome the natural barrier (work function). As a result, the thermionic source emits thermally excited electrons, thereby generating an electron beam. The design of thermionic sources may vary. It is known to use a thermionic source comprising a tip, such as the tip of a tungsten filament or a LaB6 crystal comprising such a tip. In addition, it is also known to use a LaB6 crystal in the form of a truncated cone with a polished disk. This disk is the electron emitting surface.

[0010] Field emission sources work according to a different principle than thermionic sources. The principle behind field emission is that the electric field strength increases significantly at a sharp point. If the electric field is strong enough, the work function barrier is sufficiently reduced and the electrons tunnel out of the material due to the tunneling effect or the Schottky effect. There are two types of field emission sources, namely cold field emission sources and thermal field emission sources. In the case of a cold field emission source, the end of the electron source is usually made of a single crystal thin tungsten wire and is subjected to a strong electric field at room temperature, thereby emitting electrons in the single crystal using the tunneling effect, so that an electron beam is generated. However, in order to allow field emission, the surface must be free of contaminants and oxides. This can be achieved by using relatively good vacuum conditions (for example, residual pressure below 10 -7hPa), and in particular, operating the system under UHV conditions (ultra-high vacuum conditions). In the case of a thermal field emission source, the electron source is heated while being subjected to a strong electric field, which causes the electrons to be emitted using the Schottky effect, so that an electron beam is generated. The vacuum conditions required for this electron source are more relaxed, but still need to be less than 10 -6 Residual pressure in hPa.

[0011] Another particle beam generator in the form of an ion beam generator is also known from the prior art. The ion beam generator comprises an ion source configured to emit ions, a suppression electrode configured to suppress ions emitted from the side surface of the ion source, an extraction electrode configured to extract ions from the ion source, a first variable voltage supply unit for biasing the extraction electrode using an extraction voltage, and a second variable voltage supply unit for biasing the suppression electrode using a suppression voltage. The particle beam generator provides an emission current including ions.

[0012] It is known to use a liquid metal ion source as an ion source. The liquid metal ion source has a container containing liquid metal, such as gallium. An emission device in the form of an emission line with a tip is arranged at the container. The liquid metal flows from the container along the surface of the emission line to the tip of the emission line. Due to the arrangement of the above-mentioned ion source, the tip of the emission line is exposed to an electric field sufficient to ionize the atoms of the liquid metal and extract ions from the tip of the emission line. Thus, an ion beam including ions is generated.

[0013] If liquid gallium is used as the metal of the liquid metal ion source, gallium ions may be implanted into the surface of the object. Moreover, when a gallium liquid metal ion source is used, the penetration depth of the gallium ions into the object is several nanometers (nm), for example 5nm to 8nm. The implantation of gallium ions may change the chemical structure of the object, which is usually undesirable. It is also known to use a plasma ion source as an ion particle beam generator, in which a rare gas such as argon is used to generate ions. The use of such a plasma ion source reduces or avoids ion implantation into the object. It is also known to use a gallium liquid metal ion source in a first step to generate ions for grinding an object, and in a second step to use a plasma ion source to generate ions to remove a material layer of the object, wherein the layer has a thickness of 5nm to 8nm, thereby removing gallium ions that have been implanted into the object during grinding.

[0014] A particle beam device comprising a liquid metal ion source and a plasma ion source is known. Specifically, the particle beam device comprises a first particle beam column with a liquid metal ion source and a second particle beam column with a plasma ion source, wherein the first particle beam column and the second particle beam column are arranged at the object chamber of the particle beam device. If the ions generated by the liquid metal ion source are directed to the object, the object is moved to the first position in the object chamber. In addition, if the ions generated by the plasma ion source are directed to the object, the object is moved to the second position in the object chamber. The size of the object chamber is enough to make the first particle beam column and the second particle beam column can be arranged at the object chamber. However, if a smaller object chamber should be used, there is not enough space at the object chamber to be used for arranging the first particle beam column and the second particle beam column at the object chamber.

[0015] As prior art we cite DE 196 50 680 A1 and WO 01 / 82330 A1.

[0016] Therefore, it is desirable to provide a particle beam device having a first particle beam generator for generating a first particle beam having first charged particles and a second particle beam generator for generating a second particle beam having second charged particles, wherein the particle beam device further comprises a mechanism for selecting the first charged particles or the second charged particles. Summary of the invention

[0017] According to the invention, this object is achieved by a particle beam device as described below. Further features of the invention will become apparent from the following description, the following claims and / or the accompanying drawings.

[0018] The particle beam device according to the present invention is used for imaging, analyzing and / or processing an object. The particle beam device can be an electron beam device and / or an ion beam device. The particle beam device can include an optical axis, and the first particle beam or the second particle beam of the particle beam device can be guided along the optical axis.

[0019] The particle beam device according to the present invention may include a first particle beam generator for generating a first particle beam having first charged particles. These first charged particles may be electrons or ions. The first particle beam generator has a first generator beam axis. The optical axis and the first generator beam axis are identical. In particular, the optical axis and the first generator beam axis may be along a straight line.

[0020] In addition, the particle beam device according to the present invention may include a second particle beam generator for generating a second particle beam with a second charged particle. These second charged particles may be electrons or ions. The second particle beam generator may have a second generator beam axis. The optical axis and the second generator beam axis are arranged at an angle different from 0 ° and 180 °. In other words, the optical axis and the second generator beam axis are arranged to be at an angle to each other and are not identical.

[0021] The particle beam device according to the present invention may also include a deflection unit, which is used to deflect the second charged particles of the second particle beam from the second generator beam axis to the optical axis and further along the optical axis. The deflection unit may include a first opening and a second opening different from the first opening. The optical axis extends through the first opening, and the second generator beam axis extends through the second opening. The particle beam device according to the present invention may be configured so that if the first charged particles of the first particle beam are guided along the optical axis, the first charged particles of the first particle beam are not deflected by the deflection unit. Therefore, the deflection unit may have two operating modes, namely a first operating mode and a second operating mode. In the first operating mode, the first charged particles of the first particle beam are guided along the optical axis and are not deflected by the deflection unit. In the second operating mode, the second charged particles of the second particle beam are deflected by the deflection unit from the second generator beam axis to the optical axis and are further guided along the optical axis.

[0022] Particle beam device according to the present invention can also comprise the object lens that is used for focusing the first particle beam or the second particle beam on the object.In addition, particle beam device according to the present invention can have at least one detector that is used to detect interaction particle and / or interaction radiation, and these interaction particle and this interaction radiation are generated when the first particle beam or the second particle beam impact on the object.Interaction particle can be secondary particle and / or backscattered particle, particularly secondary electron and backscattered electron or backscattered ion.Interaction radiation can be X-ray and / or cathode ray light.

[0023] The particle beam device according to the present invention is arranged to select the first particle beam with the first charged particle or the second particle beam with the second charged particle. In addition, the particle beam device according to the present invention is arranged to deflect the second particle beam with the second charged particle from the second generator beam axis to the optical axis and along the optical axis to guide the second particle beam to the objective lens. In addition, the particle beam device according to the present invention is configured to focus the second particle beam with the second charged particle in the deflection plane, which is the same as focusing the second particle beam in another plane at each point of the optical axis, wherein the another plane is perpendicular to the deflection plane. Therefore, the anastigmatic imaging of the object can be provided. In addition, if the first particle beam is selected, the particle beam device according to the present invention is arranged to pass the first particle beam through the deflection unit, wherein the first particle beam is not deflected by the deflection unit.

[0024] Additionally or alternatively, according to an embodiment of the particle beam device of the present invention, it is provided that the first particle beam generator is a liquid metal ion source. In particular, the first particle beam generator can be a gallium liquid metal ion source. The present invention is not limited to gallium as a metal. Instead, any metal suitable for the present invention can be selected. Additionally or alternatively, according to another embodiment of the particle beam device of the present invention, it is provided that the second particle beam generator is a plasma ion source. In particular, the second particle beam generator can be a rare gas plasma ion source, such as an argon plasma ion source. The present invention is not limited to argon as a rare gas. Instead, any rare gas suitable for the present invention can be selected.

[0025] Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides that the first particle beam generator can be a cold field emission source and the second particle beam generator can be a thermal ion source. For example, the first particle beam generator can be a first electron source, and / or the second particle beam generator can be a second electron source. Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides that the first particle beam generator can be an electron source and the second particle beam generator can be an ion source. In another embodiment, another embodiment of the particle beam device according to the present invention provides that the first particle beam generator can be an ion source and the second particle beam generator can be an electron source. Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides that the first particle beam generator is a first ion source and the second particle beam generator is a second ion source.

[0026] Additionally or alternatively, an embodiment of the particle beam device according to the present invention provides a first generator condenser lens extending along the first generator beam axis. Therefore, the first generator condenser lens extends along the optical axis. In addition, the first generator condenser lens is arranged between the first particle beam generator and the deflection unit. The first generator condenser lens is configured to focus and guide the first particle beam along the optical axis. Additionally or alternatively, a second generator condenser lens extending along the second generator beam axis is provided according to the particle beam device of the present invention. Therefore, the second generator condenser lens does not extend along the optical axis. In addition, the second generator condenser lens is arranged between the second particle beam generator and the deflection unit. The second generator condenser lens is configured to focus and guide the particle beam along the second generator beam axis. In particular, the second generator condenser lens can generate a crossover of the second particle beam at the center of the deflection unit and on the optical axis. The crossover is the beam waist of the second particle beam, wherein the beam waist is the region of the second particle beam with the minimum diameter.

[0027] Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides a beam limiting aperture unit that can be arranged along the optical axis. In addition, the beam limiting aperture unit can be arranged between the deflection unit and the objective lens. In particular, the beam limiting aperture unit can be configured to select the second charged particles of the second particle beam to be directed to the objective lens and focused on the object. The second particle beam may be dispersed after being deflected by the deflection unit. Dispersion depends on the energy of the second charged particles. The beam limiting aperture unit can have an area irradiated by the second particle beam, and the second particle beam includes the second charged particles with any available kinetic energy. Therefore, the second charged particles with any available kinetic energy are directed to the objective lens. Therefore, the dispersion of the second particle beam caused by the deflection of the deflection unit to the second charged particles with different energies will not affect the beam quality of the second particle beam entering the objective lens.

[0028] Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides a first beam stopping unit for stopping the first particle beam. In other words, the particle beam device may include a first beam stopping unit, which is used to stop the first particle beam if the second particle beam is deflected by the deflection unit and directed to the objective lens along the optical axis. The deflection unit may be configured so that, when the second particle beam is deflected from the second generator beam axis to the optical axis, the first particle beam is deflected by the deflection unit to the first beam stopping unit to stop the first particle beam.

[0029] Additionally or alternatively, the first movable beam stopping unit for stopping the first particle beam is provided according to an embodiment of the particle beam device of the present invention, wherein the first movable beam stopping unit can extend along the first generator beam axis. In addition, the first movable beam stopping unit can be arranged between the first particle beam generator and the deflection unit. If the second particle beam is deflected by the deflection unit and directed to the object lens along the optical axis, the first movable beam stopping unit of the present embodiment can be used to stop the first particle beam. In particular, the first movable beam stopping unit can be a valve. The valve can be configured to close when the first particle beam must stop, and can be configured to open when the first particle beam is directed to the object lens along the optical axis.

[0030] Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides a second beam stopping unit for stopping the second particle beam. In other words, the particle beam device may include a second beam stopping unit, which is used to stop the second particle beam if the first particle beam is directed to the object lens along the optical axis. When the first particle beam is directed along the optical axis, the deflection unit neither deflects the first particle beam nor deflects the second particle beam. Therefore, the second particle beam is directed to the second beam stopping unit along the second generator beam axis to stop the second particle beam.

[0031] Additionally or alternatively, embodiments of the particle beam device according to the present invention provide a second movable beam stopping unit for stopping the second particle beam, wherein the second movable beam stopping unit can extend along the second generator beam axis. In addition, the second movable beam stopping unit can be arranged between the second particle beam generator and the deflection unit.

[0032] If the first particle beam is directed to the objective lens along the optical axis, the second movable beam stopping unit of the present embodiment can be used to stop the second particle beam. In particular, the second movable beam stopping unit can be a valve. The valve can be configured to close when the second particle beam must be stopped, and can be configured to open when the second particle beam is directed from the second generator beam axis to the optical axis and along the optical axis in the direction of the objective lens.

[0033] Additionally or alternatively, according to another embodiment of the particle beam device of the present invention, it is provided that the deflection unit may be a magnetic deflection unit providing a non-uniform magnetic field. In particular, the deflection unit may have a first pole shoe and a second pole shoe arranged opposite to the first pole shoe. A conical opening with a half cone angle is arranged between the first pole shoe and the second pole shoe, wherein the optical axis extends through the conical opening. The half cone angle may be in the range of 0.5° and 4°, wherein the limit is included in the range. The present invention is not limited to the above range. Instead, any half cone angle value applicable to the present invention may be selected. The first pole shoe and the second pole shoe may include a yoke having a coil arranged at the yoke. The conical opening may provide a non-uniform magnetic field for focusing a second particle beam having a second charged particle in a deflection plane, which is the same as focusing the second particle beam in another plane at each point of the optical axis, wherein the other plane is perpendicular to the deflection plane. The magnetic field intensity B may be given by the following formula

[0034]

[0035] Wherein, R is the deflection radius, m is the mass of the second charged particle of the second particle beam, U is the acceleration voltage of the second charged particle of the second particle beam, and e is the elementary charge. For example, it is applicable to: R = 50 mm and U = 2 kV. Therefore, if the second charged particle is an argon ion, the magnetic field strength can be B = 0.81 T. The half cone angle can be given by the following formula

[0036]

[0037] Wherein, α is the half cone angle, and D is the gap between the first pole shoe and the second pole shoe. For example, it is applicable to D=10 mm. In this case, the half cone angle α is 1.43°.

[0038] Additionally or alternatively, according to another embodiment of the particle beam device of the present invention, the deflection unit may be an electrostatic deflection unit that provides an electric field. In particular, the electrostatic deflection unit may include a first deflection electrode and a second deflection electrode arranged opposite to the first deflection electrode. The electrostatic deflection unit may include a spherical capacitor. In addition, the electrostatic deflection unit may include an entrance side and an exit side. The first grounded shielding tube is arranged between the deflection unit and the second beam generator, at the entrance side. The second grounded shielding tube is arranged between the deflection unit and the objective lens, at the exit side. The first grounded shielding tube and the second grounded shielding tube are configured to limit the edge field of the electrostatic deflection unit. The third grounded shielding tube is configured to limit the edge field of the electrostatic deflection unit, and the third grounded shielding tube may be arranged between the deflection unit and the first beam generator, at the first opening of the deflection unit.

[0039] The voltage U1 at the first deflection electrode can be given by

[0040]

[0041] Where R1 is the radius of the first deflection electrode, U is the acceleration voltage of the second charged particle of the second particle beam, and R is the deflection radius. In addition, the voltage U2 at the second deflection electrode can be given by

[0042]

[0043] Wherein, R2 is the radius of the second deflection electrode, U is the acceleration voltage of the second charged particle of the second particle beam, and R is the deflection radius. For example, it is applicable to: U=2kV, R=50mm, R1=45mm and R2=55mm. If so, it is applicable to: U1=-444V and U2=364V.

[0044] Additionally or alternatively, another embodiment of particle beam device according to the present invention provides an electrode for compensating the electric field in the electrostatic deflection unit. Because the first opening in the electrostatic deflection unit affects the electric field in the electrostatic deflection unit, it is desired to compensate the electric field. Therefore, this embodiment of particle beam device according to the present invention provides an electrode for compensating the electric field. The electrode can be arranged at the first opening and can be separated from the deflection unit.

[0045] Additionally or alternatively, according to an embodiment of the particle beam device of the present invention, the first opening includes a first opening portion and a second opening portion. The first opening portion is connected to the second opening portion by a bridge, wherein the bridge is a part of the electrostatic deflection unit. In addition, the first opening portion and the second opening portion may be symmetrical. An electrode for compensating the electric field may be arranged at the first opening portion and / or the second opening portion of the first opening. In addition, the electrode may be separated from the electrostatic deflection unit. Additionally or alternatively, the first electrode for compensating the electric field may be arranged at the first opening portion, and the second electrode for compensating the electric field may be arranged at the second opening portion. In addition, the first electrode for compensating the electric field and / or the second electrode for compensating the electric field may be separated from the electrostatic deflection unit.

[0046] Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides at least one deformation portion of the electrostatic deflection unit for compensating the electric field in the electrostatic deflection unit. For example, the deformation portion is arranged at or near the edge of the first opening of the electrostatic deflection unit. In particular, the at least one deformation portion can be arranged at a distance of up to 10 mm from the edge of the first opening of the electrostatic deflection unit. The present invention is not limited to this embodiment. Instead, the deformation portion or these deformation portions can be arranged anywhere in the electrostatic deflection unit applicable to the present invention. Since the first opening in the electrostatic deflection unit affects the electric field in the electrostatic deflection unit, a mechanism for compensating the electric field is desired. Therefore, this embodiment includes a deformation portion for compensating the electric field. Additionally or alternatively, another embodiment of the particle beam device according to the present invention provides that the first opening includes a first opening portion and a second opening portion. The first opening portion is connected to the second opening portion by a bridge, wherein the bridge is a part of the electrostatic deflection unit. At least one deformation portion for compensating the electric field can be arranged at or near the bridge. In particular, the at least one deformation portion can be arranged at a distance of up to 10 mm from the bridge. The present invention is not limited to this embodiment. Rather, the deformation or deformations may be arranged anywhere at or near the bridge suitable for the present invention.In addition, the first opening portion and the second opening portion may be symmetrical.

[0047] Additionally or alternatively, an embodiment of the particle beam device according to the invention provides that the particle beam device is at least one of: an electron beam device and an ion beam device. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Embodiments of the invention described herein are explained in more detail below with reference to the accompanying drawings, in which:

[0049] Figure 1 A schematic diagram showing an embodiment of a particle beam apparatus is shown;

[0050] Figure 2A schematic diagram of a first embodiment of a particle generator unit of a particle beam device is shown;

[0051] Figure 3 Shown according to Figure 2 Another schematic diagram of the first embodiment of the particle generator unit;

[0052] Figure 4 A schematic diagram showing a second embodiment of a particle generator unit of a particle beam device;

[0053] Figure 5 A schematic diagram showing a third embodiment of a particle generator unit of a particle beam device;

[0054] Figure 6 A schematic diagram showing a fourth embodiment of a particle generator unit of a particle beam device;

[0055] Figure 7 A schematic diagram showing a fifth embodiment of a particle generator unit of a particle beam device;

[0056] Figure 8 a schematic diagram showing a sixth embodiment of a particle generator unit of a particle beam device; and

[0057] Fig. 9 A schematic diagram of a seventh exemplary embodiment of a particle generator unit of a particle beam device is shown. DETAILED DESCRIPTION

[0058] Figure 1 1 shows a schematic diagram of a particle beam device 100. The particle beam device 100 has a particle generator unit 200 which may include a housing. The particle generator unit 200 is arranged in a beam guide tube ( Figure 1 (not shown).

[0059] The particle generator unit 200 includes a first particle beam generator 300 for generating a first particle beam having first charged particles. These first charged particles may be electrons or ions. For example, the first particle beam generator 300 includes a first charged particle source 303 in the form of a liquid metal ion source. In particular, the first charged particle source 303 may be a gallium liquid metal ion source. The present invention is not limited to gallium as a metal. Rather, any metal suitable for the present invention may be selected. The first particle beam generator 300 has a first generator beam axis 301. The optical axis OA of the particle beam device 100 and the first generator beam axis 301 are the same. In particular, the optical axis OA and the first generator beam axis 301 may be along a straight line. The first generator beam condenser lens 302 extends along the first generator beam axis 301. Therefore, the first generator beam condenser lens 302 extends along the optical axis OA. Moreover, the first generator beam condenser lens 302 is arranged between the first particle beam generator 300 and the deflection unit 500, which is schematically shown in FIG. Figure 1 The first generator condenser lens 302 is configured to focus and direct the first particle beam along an optical axis OA.

[0060] In addition, the particle generator unit 200 includes a second particle beam generator 400 for generating a second particle beam having a second charged particle. These second charged particles can be electrons or ions. For example, the second particle beam generator 400 includes a second charged particle source 403 in the form of a rare gas plasma ion source (e.g., an argon plasma ion source). The present invention is not limited to argon as a rare gas. Instead, any rare gas applicable to the present invention can be selected. The second particle beam generator 400 has a second generator beam axis 401. The optical axis OA of the particle beam device 100 and the second generator beam axis 401 are arranged at an angle different from 0° and 180°. In other words, the optical axis OA and the second generator beam axis 401 are arranged to be at an angle to each other and are not the same. For example, the optical axis OA and the second generator beam axis 401 are arranged to be 90° to each other. The present invention is not limited to an angle of 90°. Instead, any angle applicable to the present invention and different from 0° and 180° can be selected. The second generator beam lens 402 extends along the second generator beam axis 401. The second generator condenser lens 402 is arranged between the second particle beam generator 400 and the deflection unit 500. The second generator condenser lens 402 is configured to focus and guide the second particle beam along the second generator beam axis 401. In particular, the second generator condenser lens 402 can generate a crossover of the second particle beam at the deflection center, on the bending axis 526. The crossover is the beam waist of the second particle beam, wherein the beam waist is the region of the second particle beam with the minimum diameter.

[0061] Additionally or alternatively, another embodiment of the particle beam device 100 according to the present invention provides that the first particle beam generator 300 can be a cold field emission source and the second particle beam generator 400 can be a thermal ion source. For example, the first particle beam generator 300 can be a first electron source, and / or the second particle beam generator 400 can be a second electron source. Additionally or alternatively, the particle beam device 100 according to the present invention provides that the first particle beam generator 300 can be an electron source and the second particle beam generator 400 can be an ion source. In another embodiment, the particle beam device 100 according to the present invention provides that the first particle beam generator 300 can be an ion source and the second particle beam generator 400 can be an electron source. Additionally or alternatively, another embodiment of the particle beam device 100 according to the present invention provides that the first particle beam generator 300 is a first ion source and the second particle beam generator 400 is a second ion source.

[0062] As described above, the particle generator unit 200 further comprises a deflection unit 500 for deflecting the second charged particles of the second particle beam from the second generator beam axis 401 to the optical axis OA and further along the optical axis OA. The deflection unit 500 comprises a first opening 501 and a second opening 502 different from the first opening 501. The optical axis OA extends through the first opening 501, wherein the first opening 501 is arranged at a first side of the deflection unit 500, the first side pointing to the first particle beam generator 300. The second generator beam axis 401 extends through the second opening 502, wherein the second opening 502 is arranged at a second side of the deflection unit 500, the second side pointing to the second particle beam generator 400. The deflection unit 500 further comprises a third opening 503, the third opening being different from the first opening 501 and different from the second opening 502. The third opening 503 is opposite to the first opening 501. The optical axis OA furthermore extends through a third opening 503 , wherein the third opening 503 is arranged on a third side of the deflection unit 500 which faces the objective 107 of the particle beam device 100 .

[0063] The particle beam device 100 is configured so that, if the first charged particles of the first particle beam are guided along the optical axis OA, the first charged particles of the first particle beam are not deflected by the deflection unit 500. Therefore, the deflection unit 500 can have two operation modes, namely a first operation mode and a second operation mode. In the first operation mode, the first charged particles of the first particle beam are guided along the optical axis OA and are not deflected by the deflection unit 500. In the second operation mode, the second charged particles of the second particle beam are deflected by the deflection unit 500 from the second generator beam axis 401 to the optical axis OA and are further guided along the optical axis OA.

[0064] The first charged particles of the first particle beam or the second charged particles of the second particle beam travel along the optical axis OA through a beam guiding tube which extends to an objective lens 107 which may be an electrostatic and / or magnetic objective lens.

[0065] The fixed aperture unit 109 is arranged between the deflection unit 500 and the objective lens 107. Alternatively, the aperture unit 109 is movable. In the exemplary embodiment shown here, the aperture unit 109 is a circular aperture having an aperture opening 118 for the first particle beam or the second particle beam to pass through, and the aperture opening 118 has an extension in the range of 5μm to 2000μm, wherein the limit is included in this range, for example 35μm. The aperture unit 109 can be a pressure stage aperture. The aperture unit 109 of another exemplary embodiment can have several openings, which can be mechanically moved relative to the first particle beam or the second particle beam, or can be passed through by the first particle beam or the second particle beam using an electric and / or magnetic deflection device. As described above, the aperture unit 109 can also be a pressure stage unit. The aperture unit will have an ultra-high vacuum (10 -7 Up to 10 -12 hPa) and the first region with high vacuum (10 -3 Up to 10 -7 The second region is the intermediate pressure region of the beam guide tube leading to the object chamber 120 via the objective lens 107.

[0066] The objective lens 107 may have a magnetic lens, an electrostatic lens or an electrostatic magnetic lens. Depending on the type of lens, the objective lens 107 may have a pole shoe in which a hole has been formed. If the lens has a pole shoe, a beam guide tube may be arranged and guided through this hole. Further, a coil may be arranged in the pole shoe. Depending on the type of lens, the objective lens 107 may have electrodes in which a hole has been formed. If the lens has electrodes, the beam guide tube may extend to the electrodes. The potential of the beam guide tube may be ground potential or different from ground potential. The potential at which one or more of these electrodes is different from the beam guide tube potential may be.

[0067] In addition, the particle beam device 100 has a scanning device ( Figure 1 114). The first particle beam or the second particle beam can be deflected by the scanning device and scanned on the object 114. In the process, the first charged particles of the first particle beam or the second charged particles of the second particle beam interact with the object 114. As a result of this interaction, detected interaction particles and / or interaction radiation will be generated. The detection signal obtained in this way is evaluated.

[0068] As the interaction particles, in particular, particles (so-called secondary particles) emitted from the surface of the object 114, or particles (so-called backscattered particles) backscattered from the object 114 by the first particle beam or the second particle beam. For example, the particles emitted from the surface of the object 114 may be secondary electrons. Also, the particles backscattered at the object 114 may be backscattered electrons or ions.

[0069] In order to detect secondary particles and / or backscattered particles, the first detector 116 is arranged in the object chamber 120 of the particle beam device 100. The first detector 116 is mainly used to detect secondary particles. Particles backscattered from the object 114, i.e. backscattered particles, can also be detected by the first detector 116.

[0070] The detection signals generated by first detector 116 are used to generate one or more images of the surface of object 114 .

[0071] In addition to the above-mentioned first detector 116, the particle beam device 100 further has a radiation detector 122 arranged in the object chamber 120. For example, the radiation detector 122 may be positioned between the beam guide tube and the object 114. Moreover, the radiation detector 122 may also be positioned on one side of the object 114. The radiation detector 122 may be a CCD detector.

[0072] The object chamber 120 operates within a first pressure range or a second pressure range, wherein the first pressure range only includes pressures less than or equal to 10 -3 hPa, and wherein the second pressure range only includes pressures above 10 -3 hPa pressure. Pressure sensor ( Figure 1 ) is arranged in the object chamber 120 for measuring the pressure in the object chamber 120. A vacuum system ( Figure 1 ) is connected to a pressure sensor and is arranged at the object chamber 120, and the vacuum system provides a pressure range in the object chamber 120, that is, a first pressure range or a second pressure range.

[0073] The particle beam device 100 may further have a second detector 121, which is arranged in the object chamber 120. The second detector 121 is arranged downstream of the object 114, viewed from the first particle beam generator 300 along the optical axis OA in the direction of the object 114. The first particle beam or the second particle beam may be transmitted through the object 114. The particles of the first particle beam or the second particle beam interact with the material of the object 114. The particles transmitted through the object 114 will be detected using the second detector 121.

[0074] The first detector 116, the second detector 121 and the radiation detector 122 are connected to a control unit 123. The control unit 123 may include a monitor 124 for displaying an image generated using detector signals of the first detector 116, the second detector 121 and / or the radiation detector 122.

[0075] The particle generator unit 200 is connected to a first pump system 523 for providing a vacuum in the particle generator unit 200. Additionally or alternatively, the first particle beam generator 300 is connected to a second pump system 524 for providing a vacuum in the first particle beam generator 300. Additionally or alternatively, the second particle beam generator 400 is connected to a third pump system 525 for providing a vacuum in the second particle beam generator 400.

[0076] Figure 2 It shows that Figure 1 Schematic diagram of a particle generator unit 200 is shown. The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanations also apply. Figure 3 The deflection unit 500 is shown in FIG. Figure 2 Schematic diagram in the direction A shown. The deflection unit 500 may be a magnetic deflection unit that provides a non-uniform magnetic field. In particular, the deflection unit 500 may have a first pole shoe 504 and a second pole shoe 505 arranged opposite to the first pole shoe 504. A conical opening 506 with a semi-conical angle α is arranged between the first pole shoe 504 and the second pole shoe 505, wherein the optical axis OA extends through the conical opening 506. Figure 3 , the right edge of the deflection unit 500 corresponds to the coincident symmetry axes 527 of the conical surface of the first pole shoe 504 and the conical surface of the second pole shoe 505. In addition, the center of the deflection arc of the second particle beam is positioned on these symmetry axes 527. The semi-cone angle α of the conical surface can be in the range of 0.5° and 4°, wherein the limit is included in this range. The present invention is not limited to the above range. Rather, any value of the semi-cone angle α applicable to the present invention can be selected. The first pole shoe 504 and the second pole shoe 505 may include a yoke 507 having a coil 508 arranged at the yoke 507. The conical opening 506 may provide a non-uniform magnetic field for focusing the second particle beam having the second charged particles in the deflection plane, which is the same as focusing the second particle beam in another plane at each point of the optical axis OA, wherein the other plane is perpendicular to the deflection plane. The magnetic field strength B may be given by the following formula

[0077]

[0078] Wherein, R is the deflection radius, m is the mass of the second charged particle of the second particle beam, U is the acceleration voltage of the second charged particle of the second particle beam, and e is the elementary charge. For example, it is applicable to: R = 50 mm and U = 2 kV. Therefore, if the second charged particle is an argon ion, the magnetic field strength can be B = 0.81 T. The semi-cone angle α can be given by the following formula

[0079]

[0080] Wherein, α is the half cone angle, and D is the gap between the first pole piece 504 and the second pole piece 505. For example, it is applicable to D=10 mm. In this case, the half cone angle α is 1.43°.

[0081] Figure 4 A schematic diagram of another embodiment of a particle generator unit 200 is shown. Figure 4 based on Figure 2 The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanations also apply. Figure 2 In addition to the components shown in Figure 4 Also shown is a first beam stop unit 509 for stopping the first particle beam. In other words, the particle beam device 100 includes a first beam stop unit 509, which is used to stop the first particle beam if the second particle beam is deflected by the deflection unit 500 and guided to the objective lens 107 along the optical axis OA. The deflection unit 500 can be configured so that when the second particle beam is deflected from the second generator beam axis 401 to the optical axis OA, the first particle beam is deflected by the deflection unit 500 to the first beam stop unit 509 to stop the first particle beam. Additionally or alternatively, the particle generator unit 200 can have a first movable beam stop unit 511 for stopping the first particle beam, wherein the first movable beam stop unit 511 can extend along the first generator beam axis 301. In addition, the first movable beam stop unit 511 can be arranged between the first particle beam generator 300 and the deflection unit 500. If the second particle beam is deflected by the deflection unit 500 and guided to the objective lens 107 along the optical axis OA, the first movable beam stopping unit 511 of the present embodiment can be used to stop the first particle beam. In particular, the first movable beam stopping unit 511 can be a valve. The valve can be configured to close when the first particle beam must be stopped, and can be configured to open when the first particle beam is guided to the objective lens 107 along the optical axis OA.

[0082] Apart from Figure 2 In addition to the components shown in Figure 4Also shown is a second beam stop unit 510 for stopping the second particle beam. In other words, the particle beam device 100 may include a second beam stop unit 510, which is used to stop the second particle beam if the first particle beam is guided to the objective lens 107 along the optical axis OA. When the first particle beam is guided along the optical axis OA, the deflection unit 500 neither deflects the first particle beam nor the second particle beam. Therefore, the second particle beam is guided to the second beam stop unit 510 along the second generator beam axis 401 to stop the second particle beam. Additionally or alternatively, the particle generator unit 200 has a second movable beam stop unit 512 for stopping the second particle beam, wherein the second movable beam stop unit 512 can extend along the second generator beam axis 401. In addition, the second movable beam stop unit 512 can be arranged between the second particle beam generator 400 and the deflection unit 500. If the first particle beam is guided to the objective lens 107 along the optical axis OA, the second movable beam stop unit 512 can be used to stop the second particle beam. In particular, the second movable beam stop unit 512 may be a valve that is configured to close when the second particle beam must be stopped and to open when directing the second particle beam from the second generator beam axis 401 to the optical axis OA and along the optical axis OA in the direction of the objective lens 107.

[0083] Figure 5 Shows Figure 1 FIG. 2 is a schematic diagram of another embodiment of a particle generator unit 200 of FIG. 2 . The same reference numerals denote the same components of the particle generator unit 200 . Therefore, the above explanations also apply. Figure 1 In addition to the components shown in Figure 5 It is also shown that the deflection unit 500 is an electrostatic deflection unit that provides an electric field. In particular, the deflection unit 500 may include a first deflection electrode 513 and a second deflection electrode 514 arranged opposite to the first deflection electrode 513. The deflection unit 500 may be a spherical capacitor. In addition, the deflection unit 500 may include an entrance side 517 and an exit side 518. The entrance side 517 may point to the second beam generator 400. The second beam generator 400 may be arranged at the entrance side 517. The exit side 518 points to the objective lens 107 ( Figure 5 4. The first grounded shielding tube 516 is arranged at the inlet side 517 and extends along the second generator beam axis 401. The second grounded shielding tube 515 is arranged at the outlet side 518 and extends along the optical axis OA. The grounded shielding tubes 515, 516 are configured to limit the fringe fields of the deflection unit 500 in the form of an electrostatic deflection unit.

[0084] The voltage U1 at the first deflection electrode 513 can be given by the following formula

[0085]

[0086] Wherein, R1 is the radius of the first deflection electrode 513, U is the acceleration voltage of the second charged particle of the second particle beam, and R is the deflection radius. In addition, the voltage U2 at the second deflection electrode 514 can be given by the following formula:

[0087]

[0088] Wherein, R2 is the radius of the second deflection electrode 514, U is the acceleration voltage of the second charged particle of the second particle beam, and R is the deflection radius. For example, it is applicable to: U = 2 kV, R = 50 mm, R1 = 45 mm and R2 = 55 mm. If so, it is applicable to: U1 = -444 V and U2 = 364 V.

[0089] Figure 6 A schematic diagram of another embodiment of a particle generator unit 200 is shown. Figure 6 based on Figure 5 The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanations also apply. Figure 5 In addition to the components shown in Figure 6 Also shown is an electrode 519 for compensating the electric field in a deflection unit 500 in the form of an electrostatic deflection unit. Since the first opening 501 in the deflection unit 500 affects the electric field in the deflection unit 500, it is desirable to compensate for the electric field. Therefore, this embodiment of the particle beam device 100 provides an electrode 519 for compensating the electric field. The electrode 519 can be arranged at the first opening 501, the voltage U3 can be applied to the electrode 519 and the electrode 519 can be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, wherein the limits are included in this range. The distance can be given by the distance from the center of the electrode 519 to the edge of the second deflection electrode 514. The present invention is not limited to the above range. Rather, any distance suitable for the present invention can be selected. Additionally or alternatively, the electrode 519 can be curved and can be quite close to the edge of the second deflection electrode 514. The voltage U3 can be given by the following formula

[0090]

[0091] where k is a given factor between 0.5 and 2, with limits included in this range, and where DI is the distance of the electrode 519 from the deflection unit 500. All other variables are explained above.

[0092] Figure 7 A schematic diagram of an embodiment of a particle generator unit 200 is shown. Figure 7 based on Figure 5 The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanations also apply. Figure 5 In addition to the components shown, Figure 7 A deformation 520 of the second deflection electrode 514 is also shown for compensating an electric field in a deflection unit 500 in the form of an electrostatic deflection unit. The deformation 520 is arranged at an edge of a first opening 501 of the deflection unit 500. Since the first opening 501 in the deflection unit 500 affects the electric field in the deflection unit 500, a mechanism for compensating the electric field is desirable. Therefore, this embodiment includes a deformation 520 for compensating the electric field.

[0093] Figure 8 A schematic diagram of another embodiment of a particle generator unit 200 is shown. Figure 8 based on Figure 6 The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanations also apply. Figure 8 The deflection unit 500 shown in the form of an electrostatic deflection unit does not have a single first opening, but rather has a first opening including a first opening portion 501A and a second opening portion 501B.

[0094] In addition, the first opening portion 501A and the second opening portion 501B may be symmetrical. The first opening portion 501A is connected to the second opening portion 501B via a bridge 522. The bridge 522 is a part of the deflection unit 500. A first electrode 519A for compensating the electric field may be arranged at the first opening portion 501A, and a second electrode 519B for compensating the electric field may be arranged at the second opening portion 501B. The first electrode 519A for compensating the electric field may be arranged between the deflection unit 500 and the first particle beam generator 300, and the voltage U 3A A voltage U may be applied to the first electrode 519A for compensating the electric field, and the first electrode 519A for compensating the electric field may be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, wherein the limit is included in this range. The distance may be given by the distance from the center of the first electrode 519A to the edge of the second deflection electrode 514. The present invention is not limited to the above range. Rather, any distance suitable for the present invention may be selected. Additionally or alternatively, the first electrode 519A may be curved and may be fairly close to the edge of the second deflection electrode 514. The voltage U 3A It can be given by the following formula

[0095]

[0096] Where k is a given factor between 0.5 and 2, with the limits being included in this range, and where DI is the distance of the first electrode 519A from the deflection unit 500. All other variables are explained above. In addition, a second electrode 519B for compensating the electric field may be arranged between the deflection unit 500 and the first particle beam generator 300, and the voltage U 3B The voltage U may be applied to the second electrode 519B for compensating the electric field, and the second electrode 519B for compensating the electric field may also be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, wherein the limit is included in this range. The distance may be given by the distance from the center of the second electrode 519B to the edge of the second deflection electrode 514. The present invention is not limited to the above range. Rather, any distance suitable for the present invention may be selected. Additionally or alternatively, the second electrode 519B may be curved and may be quite close to the edge of the second deflection electrode 514. 3B It can be given by the following formula

[0097]

[0098] wherein k is a given factor between 0.5 and 2, with the limits being included in this range, and wherein DI is the distance of the second electrode 519B from the deflection unit 500. All other variables are explained above.

[0099] Figure 8 Also shown is a first beam stop unit 509 for stopping the first particle beam. In other words, the particle beam device 100 includes the first beam stop unit 509, which is used to stop the first particle beam if the second particle beam is deflected by the deflection unit 500 and guided to the objective lens 107 along the optical axis OA. The deflection unit 500 can be configured so that when the second particle beam is deflected from the second generator beam axis 401 to the optical axis OA, the first particle beam is deflected by the deflection unit 500 to the first beam stop unit 509 to stop the first particle beam. Additionally or alternatively, the particle beam device 100 can have a first movable beam stop unit 511 for stopping the first particle beam, wherein the first movable beam stop unit 511 can extend along the first generator beam axis 301. In addition, the first movable beam stop unit 511 can be arranged between the first particle beam generator 300 and the deflection unit 500. If the second particle beam is deflected by the deflection unit 500 and guided to the objective lens 107 along the optical axis OA, the first movable beam stopping unit 511 of the present embodiment can be used to stop the first particle beam. In particular, the first movable beam stopping unit 511 can be a valve. The valve can be configured to close when the first particle beam must be stopped, and can be configured to open when the first particle beam is guided to the objective lens 107 along the optical axis OA.

[0100] Figure 8Also shown is a third grounded shielding tube 521, which extends along the first generator beam axis 301 and is arranged at the first opening portion 501A and the second opening portion 501B. If the second particle beam is deflected by the deflection unit 500 and guided to the objective lens 107 along the optical axis OA, the third grounded shielding tube 521 greatly reduces the influence of the first electrode 519A and the second electrode 519B and the influence of the fringe field from the first deflection electrode 513 and the second deflection electrode 514 on the course of the axis of the first particle beam, thereby improving its guidance of the beam to the first beam stop unit 509.

[0101] Figure 8 Also shown is a second beam stop unit 510 for stopping the second particle beam. In other words, the particle beam device 100 may include a second beam stop unit 510, which is used to stop the second particle beam if the first particle beam is directed to the objective lens 107 along the optical axis OA. When the first particle beam is directed along the optical axis OA, the deflection unit 500 neither deflects the first particle beam nor the second particle beam. Therefore, the second particle beam is directed to the second beam stop unit 510 along the second generator beam axis 401 to stop the second particle beam. Additionally or alternatively, the particle beam device 100 has a second movable beam stop unit 512 for stopping the second particle beam, wherein the second movable beam stop unit 512 can extend along the second generator beam axis 401. In addition, the second movable beam stop unit 512 can be arranged between the second particle beam generator 400 and the deflection unit 500. If the first particle beam is directed to the objective lens 107 along the optical axis OA, the second movable beam stop unit 512 can be used to stop the second particle beam. In particular, the second movable beam stop unit 512 may be a valve that is configured to close when the second particle beam must be stopped and to open when directing the second particle beam from the second generator beam axis 401 to the optical axis OA and along the optical axis OA in the direction of the objective lens 107.

[0102] Fig. 9 A schematic diagram of another embodiment of a particle generator unit 200 is shown. Fig. 9 based on Figure 8 The same reference numerals denote the same components of the particle generator unit 200. Therefore, the above explanation also applies to Fig. 9 However, instead of having the first electrode 519A for compensating the electric field and the second electrode 519B for compensating the electric field, the deformation portion 520 for compensating the electric field in the deflection unit 500 is arranged at the bridge 522 .

[0103] The particle beam device 100 is arranged to select the first particle beam with the first charged particle or the second particle beam with the second charged particle. In addition, the particle beam device 100 is arranged to deflect the second particle beam with the second charged particle from the second generator beam axis 401 to the optical axis OA and along the optical axis OA to guide the second particle beam to the objective lens 107. In addition, the particle beam device 100 is configured to focus the second particle beam with the second charged particle in the deflection plane, which is the same as focusing the second particle beam in another plane at each point of the optical axis OA, wherein the another plane is perpendicular to the deflection plane. Therefore, anastigmatism imaging of an object can be provided. In addition, if the first particle beam is selected, the particle beam device 100 is arranged to pass the first particle beam through the deflection unit 500, wherein the first particle beam is not deflected by the deflection unit 500.

[0104] Other embodiments of the invention will be apparent to those skilled in the art from reading this specification and / or practicing the invention disclosed herein.The specification and examples are intended to be considered exemplary only, with the true scope and spirit of the invention being indicated by the following claims.

[0105] List of Reference Numerals

[0106] 100 Particle beam device

[0107] 107 Objective

[0108] 109 Aperture unit

[0109] 114 Objects

[0110] 116 First Detector

[0111] 118 Aperture opening

[0112] 120 Object Room

[0113] 121 Second detector

[0114] 122 Radiation Detector

[0115] 123 Control Unit

[0116] 124 Monitor

[0117] 200 Particle Generator Units

[0118] 300 First particle beam generator

[0119] 301 First generator beam axis

[0120] 302 First generator beam focusing lens

[0121] 303 The First Charged Particle Source

[0122] 400 Second particle beam generator

[0123] 401 Second generator beam axis

[0124] 402 Second generator focusing lens

[0125] 403 Second Charged Particle Source

[0126] 500 Deflection Unit

[0127] 501 First Opening

[0128] 501A First opening

[0129] 501B Second opening

[0130] 502 Second Opening

[0131] 503 The Third Opening

[0132] 504 First Pole Shoe

[0133] 505 Second pole shoe

[0134] 506 Conical opening

[0135] 507 Yoke

[0136] 508 Coil

[0137] 509 First beam stop unit

[0138] 510 Second beam stop unit

[0139] 511 First movable beam stopping unit

[0140] 512 Second movable beam stop unit

[0141] 513 first deflection electrode

[0142] 514 second deflection electrode

[0143] 515 Second grounding shielding tube

[0144] 516 First grounding shielding tube

[0145] 517 Entrance side

[0146] 518 Exit side

[0147] 519 Electrodes for compensating electric fields

[0148] 519A First electrode for compensating electric field

[0149] 519B Second electrode for compensating electric field

[0150] 520 Deformation part for compensating electric field

[0151] 521 Third grounding shielding tube

[0152] 522 Bridge

[0153] 523 First Pump System

[0154] 524 Second Pump System

[0155] 525 Third Pump System

[0156] 526 bending axis

[0157] 527 Axis of symmetry

[0158] A direction

[0159] D The gap between the first pole shoe and the second pole shoe

[0160] OA optical axis

[0161] R Deflection radius

[0162] U Accelerating voltage

[0163] U1 Voltage at the first deflection electrode

[0164] U2 Voltage at the second deflection electrode

[0165] U3 is the voltage at the electrode used to compensate the electric field

[0166] U 3A Voltage at the first electrode for compensating the electric field

[0167] U 3B Voltage at the second electrode for compensating the electric field

[0168] α Half cone angle

Claims

1. A particle beam apparatus for imaging, analyzing and / or processing an object, comprising: Optical axis; a first particle beam generator for generating a first particle beam having first charged particles, wherein the first particle beam generator has a first generator beam axis, wherein the optical axis and the first generator beam axis are the same; a second particle beam generator for generating a second particle beam having second charged particles, wherein the second particle beam generator has a second generator beam axis, wherein the optical axis and the second generator beam axis are arranged at an angle different from 0° and 180°; a deflection unit for deflecting the second charged particles from the second generator beam axis to and along the optical axis, wherein the deflection unit has a first opening and a second opening different from the first opening, wherein the optical axis extends through the first opening, and wherein the second generator beam axis extends through the second opening; at least one objective lens for focusing the first particle beam or the second particle beam onto the object, wherein the optical axis extends through the objective lens; at least one detector for detecting interaction particles and / or interaction radiation generated when the first particle beam or the second particle beam impinges on the object; as well as a first movable beam stop unit for stopping the first particle beam, wherein the first movable beam stop unit extends along the first generator beam axis, and wherein the first movable beam stop unit is arranged between the first particle beam generator and the deflection unit; Wherein, the deflection unit may have a first operating mode and a second operating mode, wherein, in the first operating mode, the first charged particles of the first particle beam are guided along the optical axis and are not deflected by the deflection unit, and wherein, in the second operating mode, the second charged particles of the second particle beam are deflected by the deflection unit from the second generator beam axis to the optical axis and are further guided along the optical axis.

2. The particle beam device according to claim 1, further comprising at least one of the following: (i) the first particle beam generator is a liquid metal ion source; (ii) The second particle beam generator is a plasma ion source.

3. The particle beam device according to claim 1, further comprising at least one of the following: (i) the first particle beam generator is a gallium liquid metal ion source; (ii) the second particle beam generator is a rare gas plasma ion source; (iii) The second particle beam generator is an argon plasma ion source.

4. The particle beam device according to claim 1, further comprising one of the following: (i) the first particle beam generator is a cold field emission source, and the second particle beam generator is a thermionic source; (ii) the first particle beam generator is an electron source, and the second particle beam generator is an ion source; (iii) the first particle beam generator is an ion source, and the second particle beam generator is an electron source; (iv) The first particle beam generator is a first ion source, and the second particle beam generator is a second ion source.

5. The particle beam device according to any of the preceding claims, further comprising at least one of the following: (i) a first generator condenser lens extending along the first generator beam axis, wherein the first generator condenser lens is arranged between the first particle beam generator and the deflection unit; (ii) a second generator condenser lens extending along the second generator beam axis, wherein the second generator condenser lens is arranged between the second particle beam generator and the deflection unit. 6 . The particle beam device according to claim 1 , further comprising a beam limiting aperture unit arranged along the optical axis, wherein the beam limiting aperture unit is arranged between the deflection unit and the objective lens.

7. The particle beam device according to any one of claims 1 to 4, further comprising one of the following: (i) a second beam stopping unit for stopping the second particle beam; (ii) a second movable beam stop unit for stopping the second particle beam, wherein the second movable beam stop unit extends along the second generator beam axis, and wherein the second movable beam stop unit is arranged between the second particle beam generator and the deflection unit.

8. The particle beam device according to any one of claims 1 to 4, wherein: The deflection unit is a magnetic deflection unit that provides a non-uniform magnetic field.

9. The particle beam device according to claim 8, wherein: The deflection unit has a first pole shoe and a second pole shoe arranged opposite to the first pole shoe, wherein a conical opening with a half cone angle is arranged between the first pole shoe and the second pole shoe, wherein the optical axis extends through the conical opening, and wherein the first pole shoe and the second pole shoe have a yoke including a coil arranged at the yoke.

10. The particle beam device according to any one of claims 1 to 4, wherein: The deflection unit is an electrostatic deflection unit which provides an electric field.

11. The particle beam device according to claim 10, further comprising at least one of the following: (i) the electrostatic deflection unit comprises a first deflection electrode and a second deflection electrode arranged opposite to the first deflection electrode; (ii) the electrostatic deflection unit comprises a spherical capacitor; (iii) The electrostatic deflection unit includes an inlet side and an outlet side, wherein a first grounded shielding tube is arranged at the inlet side, and wherein a second grounded shielding tube is arranged at the outlet side.

12. The particle beam device according to claim 10, further comprising one of the following: (i) an electrode for compensating the electric field, wherein the electrode is arranged at the first opening, and wherein the electrode is separated from the deflection unit; (ii) the first opening comprises a first opening portion and a second opening portion, wherein the first opening portion is connected to the second opening portion via a bridge, the bridge being a part of the deflection unit, and wherein an electrode for compensating the electric field is arranged at the first opening portion and / or the second opening portion of the first opening, the electrode being separate from the deflection unit; (iii) the first opening comprises a first opening portion and a second opening portion, wherein the first opening portion is connected to the second opening portion via a bridge, the bridge being a part of the deflection unit, wherein the first opening portion and the second opening portion are symmetrical, wherein an electrode for compensating the electric field is arranged in the first opening portion and / or the second opening portion of the first opening, the electrode being separated from the deflection unit.

13. The particle beam apparatus of claim 10, further comprising one of the following: (i) at least one deformation portion for compensating an electric field arranged at the first opening; (ii) at least one deformation portion for compensating an electric field arranged at the first opening, wherein the at least one deformation portion is arranged at an edge of the first opening of the deflection unit; (iii) the first opening comprises a first opening portion and a second opening portion, wherein the first opening portion is connected to the second opening portion via a bridge, the bridge being part of the deflection unit, and wherein at least one deformation portion for compensating the electric field is arranged at the bridge; (iv) the first opening comprises a first opening portion and a second opening portion, wherein the first opening portion is connected to the second opening portion by a bridge, the bridge is a part of the deflection unit, wherein the first opening portion and the second opening portion are symmetrical, and wherein at least one deformation portion for compensating the electric field is arranged at the bridge.

14. The particle beam device according to claim 1, wherein: The particle beam device is at least one of: an electron beam device and an ion beam device.

Images