Imaging lens and electronic device

Abstract

An imaging lens and an electronic device are disclosed. The imaging lens includes an imaging lens group, and an optical axis passes through the imaging lens. The imaging lens group includes multiple lenses, wherein each lens includes a first lens and a second lens, and each lens includes at least one nanostructure layer and at least one structural connection layer. The nanostructure layers are irregularly arranged and comprise aluminum oxide crystals. The structural connection layers are disposed between the surface of the first lens and the nanostructure layers, and between the surface of the second lens and the nanostructure layers. The structural connection layers comprise at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layers. The imaging lens can maintain image quality when certain conditions are met.

Description

Technical Field

[0001] This disclosure relates to an imaging lens, and more particularly to an imaging lens used in portable electronic devices. Background Technology

[0002] In recent years, portable electronic devices have developed rapidly, such as smart electronic devices and tablet computers, which have become ubiquitous in modern life. As a result, imaging lenses mounted on these devices have also flourished. With technological advancements, imaging lenses have gradually increased the number of lenses to pursue better image quality. However, increasing the number of lenses can easily lead to various problems, such as decreased transmittance and stray light reflection. Therefore, developing an imaging lens that can maintain image quality, reduce R&D costs, and shorten development time has become an important and urgent problem for the industry. Summary of the Invention

[0003] This disclosure provides an imaging lens and electronic device. By setting a nanostructure layer and a structural connection layer through the lens, the imaging lens can maintain imaging quality even after increasing the number of lenses. At the same time, the transmittance attenuation index is used to assist in simulating the transmittance of the imaging lens, thereby reducing research and development cost waste and shortening the research and development time.

[0004] According to one embodiment of this disclosure, an imaging lens is provided, comprising an imaging lens group, with an optical axis passing through the imaging lens. The imaging lens group includes multiple lenses, wherein each lens includes a first lens and a second lens, and the refractive index of the first lens is different from that of the second lens. The first lens and the second lens each include at least one nanostructure layer and at least one structural connecting layer. The nanostructure layer is irregularly arranged, comprises alumina crystals, and has a structural scale between 98 nm and 420 nm. The structural connecting layer is disposed between the surface of the first lens and the nanostructure layer, and between the surface of the second lens and the nanostructure layer. The structural connecting layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and has a thickness between 20 nm and 150 nm. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance of a ray in the wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The difference between the refractive index of the first lens and the refractive index of the second lens is Δn. The total number of object-side and image-side surfaces in the lens with nanostructure layers is N. CS It satisfies the following conditions: ;0.85 ≤ Tdi ≤ 0.9; 90% ≤ T5459 ; 0.065 ≤ Δn ≤ 0.82; and 0.8 ≤ N CS / 2E ≤ 1.

[0005] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 90% ≤ T 5254 .

[0006] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 90% ≤ T 5354 .

[0007] According to one embodiment of the present disclosure, an electronic device is provided, including an imaging lens as described in the foregoing embodiments.

[0008] According to one embodiment of this disclosure, an imaging lens is provided, comprising an imaging lens group, with an optical axis passing through the imaging lens. The imaging lens group includes multiple lenses, wherein each lens includes a first lens and a second lens, and the refractive index of the first lens is different from that of the second lens. The first lens and the second lens each include at least one nanostructure layer and at least one structural connecting layer. The nanostructure layer is irregularly arranged, comprises alumina crystals, and has a structural scale between 98 nm and 420 nm. The structural connecting layer is disposed between the surface of the first lens and the nanostructure layer, and between the surface of the second lens and the nanostructure layer. The structural connecting layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and has a thickness between 20 nm and 150 nm. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance of a ray in the wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The first lens has a refractive index of n1, the second lens has a refractive index of n2, and the total number of object-side and image-side surfaces in the lenses with nanostructure layers is N. CS It satisfies the following conditions: ;0.85 ≤Tdi ≤ 0.9; 90% ≤ T 5459 n1 > 1.6; n2 < 1.6; and 0.8 ≤ N CS / 2E ≤ 1.

[0009] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 90% ≤ T 5254 .

[0010] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 90% ≤ T 5354 .

[0011] According to one embodiment of the present disclosure, an electronic device is provided, including an imaging lens as described in the foregoing embodiments.

[0012] According to one embodiment of this disclosure, an imaging lens is provided, comprising an imaging lens group, with an optical axis passing through the imaging lens. The imaging lens group includes multiple lenses, wherein at least three lenses respectively include at least one nanostructure layer and at least one structural connection layer. The nanostructure layers are irregularly arranged, comprising alumina crystals, and the structural scale of the nanostructure layers is between 98 nm and 420 nm. The structural connection layer is disposed between the surface of each lens and the nanostructure layer, and the structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and the thickness of the silicon dioxide film layer is between 20 nm and 150 nm. The lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group being closer to the object side than the second lens group, and the number of lenses in the first lens group being less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the lens adjacent to the object side end of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses on the image side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, which is T. 5459 The total number of object-side and image-side surfaces in the lens with nanostructured layers is N. CS It satisfies the following conditions: ;0.85 ≤ Tdi ≤ 0.88; 90% ≤ T 5459 ; and 0.5≤ N CS / 2E ≤ 1.

[0013] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 90% ≤ T 5254 .

[0014] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 90% ≤ T 5354 .

[0015] According to the imaging lens of the embodiment described above, the number of lenses in the imaging lens group is E, and the total number of object-side and image-side surfaces in the lenses where the nanostructure layer is disposed is N. CS It can satisfy the following condition: 0.8 ≤ N CS / 2E ≤ 1.

[0016] According to one embodiment of the present disclosure, an electronic device is provided, including an imaging lens as described in the foregoing embodiments.

[0017] According to one embodiment of this disclosure, an imaging lens is provided, comprising an imaging lens group, with an optical axis passing through the imaging lens. The imaging lens group includes multiple lenses, wherein at least three lenses respectively include at least one nanostructure layer and at least one structural connection layer. The nanostructure layers are irregularly arranged, comprising alumina crystals, and the structural scale of the nanostructure layers is between 98 nm and 420 nm. The structural connection layer is disposed between the surface of each lens and the nanostructure layer, and the structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and the thickness of the silicon dioxide film layer is between 20 nm and 150 nm. The lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group being closer to the object side than the second lens group, and the number of lenses in the first lens group being less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the lens adjacent to the object side end of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses on the image side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, which is T. 5459The total number of object-side and image-side surfaces in the lens with nanostructured layers is N. CS It satisfies the following conditions: ;0.81 ≤ Tdi ≤ 0.84; 87.6% ≤ T 5459 ≤92%; and 0.59 ≤ N CS / 2E ≤ 1.

[0018] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 86% ≤ T 5254 .

[0019] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 86% ≤ T 5354 .

[0020] According to the imaging lens of the embodiment described above, the number of lenses in the imaging lens group is E, and the total number of object-side and image-side surfaces in the lenses where the nanostructure layer is disposed is N. CS It can satisfy the following condition: 0.9 ≤ N CS / 2E ≤ 1.

[0021] According to one embodiment of the present disclosure, an electronic device is provided, including an imaging lens as described in the foregoing embodiments.

[0022] According to one embodiment of this disclosure, an imaging lens is provided, comprising an imaging lens group, with an optical axis passing through the imaging lens. The imaging lens group includes multiple lenses, wherein at least three lenses respectively include at least one nanostructure layer and at least one structural connection layer. The nanostructure layers are irregularly arranged, comprising alumina crystals, and the structural scale of the nanostructure layers is between 98 nm and 420 nm. The structural connection layer is disposed between the surface of each lens and the nanostructure layer, and the structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and the thickness of the silicon dioxide film layer is between 20 nm and 150 nm. The lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group being closer to the object side than the second lens group, and the number of lenses in the first lens group being less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the lens adjacent to the object side end of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses on the image side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, which is T. 5459 The total number of object-side and image-side surfaces in the lens with nanostructured layers is N. CS It satisfies the following conditions: ;0.78 ≤ Tdi ≤ 0.80; 86% ≤ T 5459 ≤ 91%; and 0.67 ≤ N CS / 2E ≤ 1.

[0023] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 84% ≤ T 5254 .

[0024] According to the imaging lens of the embodiment described above, the imaging lens has an average transmittance for a light ray in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 84% ≤ T 5354 .

[0025] According to the imaging lens of the embodiment described above, the number of lenses in the imaging lens group is E, and the total number of object-side and image-side surfaces in the lenses where the nanostructure layer is disposed is N.CS It can satisfy the following condition: 0.96 ≤ N CS / 2E ≤ 1.

[0026] According to one embodiment of the present disclosure, an electronic device is provided, including an imaging lens as described in the foregoing embodiments. Attached Figure Description

[0027] Figure 1A A schematic diagram of an imaging lens according to the first embodiment of this disclosure is shown;

[0028] Figure 1B Drawing according to Figure 1A Scanning electron microscope image of the nanostructure layer in the first embodiment;

[0029] Figure 1C Drawing according to Figure 1A Another scanning electron microscope image of the nanostructured layer in the first embodiment;

[0030] Figure 1D Drawing according to Figure 1A A scanning electron microscope image of a cross section of the lens in the first embodiment;

[0031] Figure 1E Drawing according to Figure 1A A scanning electron microscope image of another section of the lens in the first embodiment;

[0032] Figure 1F Drawing according to Figure 1A A scanning electron microscope image of another cross-section of the lens in the first embodiment.

[0033] Figure 1G Drawing according to Figure 1A Transmittance curves of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first embodiment at wavelengths from 400 nm to 700 nm;

[0034] Figure 1H Drawing according to Figure 1A Transmittance curves of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first embodiment at wavelengths from 540 nm to 590 nm;

[0035] Figure 1I Drawing according to Figure 1A Transmittance curves of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first embodiment at wavelengths from 520 nm to 540 nm;

[0036] Figure 2A A schematic diagram of an imaging lens according to the second embodiment of this disclosure is shown;

[0037] Figure 2B Drawing according to Figure 2A Transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 400 nm to 700 nm;

[0038] Figure 2C Drawing according to Figure 2A Transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 540 nm to 590 nm;

[0039] Figure 2D Drawing according to Figure 2A Transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 520 nm to 540 nm;

[0040] Figure 3A A schematic diagram of an imaging lens according to the third embodiment of this disclosure is shown;

[0041] Figure 3B Drawing according to Figure 3A Transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 400 nm to 700 nm;

[0042] Figure 3C Drawing according to Figure 3A Transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 540 nm to 590 nm;

[0043] Figure 3D Drawing according to Figure 3A Transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths of 520 nm to 540 nm;

[0044] Figure 4 A schematic diagram of an imaging lens according to the fourth embodiment of this disclosure is shown;

[0045] Figure 5 A schematic diagram of an imaging lens according to the fifth embodiment of this disclosure is shown;

[0046] Figure 6 A schematic diagram of an imaging lens according to the sixth embodiment of this disclosure is shown;

[0047] Figure 7A A schematic diagram illustrating the electronic device according to the seventh embodiment of this disclosure; and

[0048] Figure 7B Drawing according to Figure 7A Block diagram of the electronic device in the seventh embodiment;

[0049] Figure 8A A graph showing the relationship between the transmittance attenuation index and the number of lenses according to this disclosure; and

[0050] Figure 8B A graph showing the relationship between simulated transmittance according to this disclosure and the total number of object-side and image-side surfaces in the lens with nanostructured layers is plotted.

[0051] [Symbol Explanation]

[0052] 100, 200, 300, 400, 500, 600: Imaging lenses

[0053] 111,112,113,114,115,116,117,118,211,212,213,214,215,216,217,218,311,312,313,314,315,316,317,318,411,412,413,414,415,416,417,511,512,513,514,515,516,517,611,612,613,614,615,616,617,618: Lens

[0054] 120, 220, 320, 420, 520, 620: Lens tube

[0055] 130, 230, 330, 430, 530, 630: Nanostructure layers

[0056] 140: Structural connection layer

[0057] 141,241,341,441,5411,641: Silica film layer

[0058] 451, 452: Anti-reflective coating

[0059] 5412: Titanium dioxide film layer

[0060] 70: Electronic devices

[0061] 711: Telephoto Lens

[0062] 712: Ultra-wide-angle lens

[0063] 713: Super Telephoto Lens

[0064] 714: Wide-angle main lens

[0065] 72: Lens cover plate

[0066] 73: Electronic photosensitive element

[0067] 74: User Interface

[0068] 75: Imaging signal processing element

[0069] 76: Optical anti-shake component

[0070] 77: Sensing element

[0071] 78: Flash module

[0072] 79: Focusing Assist Module

[0073] X: Optical axis

[0074] T1, T3: Thickness

[0075] T2: Structural Scale

[0076] Tdi: Penetration rate attenuation index

[0077] E: Number of lenses in the imaging lens group

[0078] c: Simulation constant for penetration attenuation

[0079] T 5254 ,T 5354 ,T 5459 Average penetration rate

[0080] T sim Simulated penetration rate

[0081] n1: Refractive index of the first lens

[0082] n2: Refractive index of the second lens

[0083] Δn: The difference between the refractive index of the first lens and the refractive index of the second lens.

[0084] N CS The total number of object-side and image-side surfaces in a lens with nanostructured layers.

[0085] FOV1: First-person perspective

[0086] FOV2: Second Perspective

[0087] FOV3: Third-Person Perspective

[0088] FOV4: The Fourth Perspective Detailed Implementation

[0089] This disclosure provides an imaging lens with an optical axis passing through it and comprising an imaging lens group, wherein the imaging lens group includes multiple lenses. Each lens includes a first lens and a second lens, and the first lens and the second lens respectively include at least one nanostructure layer and at least one structural connection layer; alternatively, at least three lenses in the lens each include at least one nanostructure layer and at least one structural connection layer. The nanostructure layers are irregularly arranged, and each nanostructure layer contains alumina crystals, with a structural scale between 98 nm and 420 nm. A structural connection layer is disposed between the surface of each lens and the nanostructure layer, and the structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the nanostructure layer, and the thickness of the silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi, the number of lenses in the imaging lens group is E, and the transmittance attenuation simulation constant is c, which satisfies the following conditions: The structural bonding layer stabilizes the nanostructure layer, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Furthermore, the nanostructure layer on the lens ensures consistent image quality across different imaging lenses when switching between lenses, reducing any jerking or stuttering during lens transitions.

[0090] The nanostructured layer has pores, allowing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes between interfaces and minimizing the chance of light reflection. Furthermore, the structural bonding layer can also be a film composed of alternating high-refractive-index and low-refractive-index layers, with a silica film on top in solid contact with the nanostructured layer, and the imaging lens can include a molded glass. Alternatively, the lens can be a Fresnel lens or a meta lens, but is not limited to these.

[0091] Please refer to Table 1 and... Figure 8A Table 1 shows the transmittance attenuation index for different transmittance attenuation simulation constants corresponding to different numbers of lenses. Figure 8A A graph showing the relationship between the transmittance attenuation index and the number of lenses according to this disclosure is presented. (From Table 1 and...) Figure 8AIt is known that the transmittance attenuation simulation constant is c, and the transmittance attenuation index is Tdi. The transmittance attenuation index is a mathematical model that can simulate the transmittance of an imaging lens, while the transmittance attenuation simulation constant can be constructed from experimental data. The transmittance attenuation index is negatively correlated with the number of lenses in the imaging lens group and positively correlated with the transmittance attenuation simulation constant, but unrelated to the nanostructure layer. Furthermore, the transmittance attenuation simulation constant may be affected by changes in lens quality and testing conditions. Specifically, a transmittance attenuation simulation constant of 0.008 is the optimal condition, consistent with the transmittance prediction model disclosed herein. It must be noted that the transmittance attenuation simulation constant can also increase or decrease; that is, the transmittance attenuation simulation constant can be 0.007, 0.009, or 0.01, and is not limited to this. The transmittance of the coated lens can be simulated using the transmittance simulation formula. Experimental data estimates show that each nanostructure layer coating on one surface of the lens can increase the transmittance by approximately 0.28%. Therefore, the transmittance simulation formula can simulate the transmittance of lenses with a number of nanostructure layers in the lens.

[0092]

[0093] Please refer to Table 2 and... Figure 8B Table 2 shows the simulated transmittance of the object-side and image-side surfaces of the lens with nanostructured layers, corresponding to the total number of different surfaces. Figure 8B A graph showing the relationship between simulated transmittance according to this disclosure and the total number of object-side and image-side surfaces in the lens with nanostructured layers is plotted. (From Table 2 and...) Figure 8B It can be seen that the simulated penetration rate is T. sim The transmittance attenuation index is Tdi, and the total number of object-side and image-side surfaces with nanostructured layers in the lens is N. CS The imaging lens group has E lenses. Taking eight lenses as an example, this simulates the transmittance corresponding to the total number of object-side and image-side surfaces with nanostructured layers in different lenses. Specifically, the simulated transmittance T... sim The total number N of the object-side and image-side surfaces in the lens with nanostructured layers will change. CS An increase or improvement can satisfy the following conditions: T sim = Tdi×100%+0.28%×N CS It must be noted that the above conditional expressions apply to the optimal wavelength range of 540 nm to 590 nm. For example, when the imaging lens group does not have a nanostructure layer, it can satisfy the following condition: T sim = Tdi×100%; When the total number of surfaces on the object-side and image-side surfaces of the lens with nanostructured layers is N CS At that time, it can satisfy the following conditions: T sim= Tdi×100%+0.28%×N CS When all lenses in an imaging lens group have nanostructure layers, the following conditions can be met: T sim = Tdi × 100% + 0.28% × 2E. Therefore, by using the transmittance attenuation index and simulated transmittance, the number of coating surfaces required to meet lens specifications can be simulated in advance, reducing unnecessary cost waste and shortening the development time. Furthermore, through simulated transmittance, it can be determined that when the number of lenses is eight, the total number of object-side and image-side surfaces with nanostructured layers in the lenses must be at least eight, enabling simulated transmittance to reach over 90%. It must be noted that the simulated transmittance T... sim These are simulated values ​​only and are not limited to these values.

[0094]

[0095] Please refer to Table 3, which shows the simulated transmittance for different numbers of lenses. Table 3 shows that Tdi×100% is used to simulate the maximum theoretical transmittance achievable by the imaging lens when different numbers of lenses are used, and all lenses have no nanostructure layer; N CS = 2E is used to simulate the maximum transmittance that an imaging lens can theoretically achieve when it has different numbers of lenses and all lenses have nanostructure layers.

[0096]

[0097] The imaging lens group can be divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the lens adjacent to the object-side end of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses on the image side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. By setting a nanostructure layer on the high-refractive-index lens, the chance of light reflection at the interface can be reduced. Specifically, the high-refractive-index lens can be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average refractive index in the imaging lens; the low-refractive-index lens can be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average refractive index in the imaging lens.

[0098] The penetration attenuation index is Tdi, which can satisfy the following conditions: 0.85 ≤ Tdi ≤ 0.9. Alternatively, it can satisfy the following conditions: 0.85 ≤ Tdi ≤ 0.88. Furthermore, it can satisfy the following conditions: 0.81 ≤ Tdi ≤ 0.84. Alternatively, it can satisfy the following conditions: 0.78 ≤ Tdi ≤ 0.80.

[0099] The imaging lens has an average transmittance for light rays in the wavelength range of 540 nm to 590 nm, and the average transmittance is T. 5459 It can satisfy the following condition: 90% ≤ T 5459 It must be noted that the average transmittance is measured by placing the imaging lens group inside a lens barrel and measuring the average transmittance of light with wavelengths from 540 nm to 590 nm, wherein the imaging lens group does not contain a filter during the measurement. Alternatively, it can satisfy the following condition: 87.6% ≤ T 5459 ≤ 92%. Furthermore, it satisfies the following condition: 86% ≤ T 5459 ≤ 91%.

[0100] The first lens has a refractive index of n1, and the second lens has a refractive index of n2. The difference between the refractive indices of the first and second lenses is Δn, which must satisfy the following conditions: 0.065 ≤ Δn ≤ 0.82; n1 > 1.6; and n2 < 1.6. It must be noted that the refractive index of the first lens may differ from that of the second lens, and the refractive index of the lenses is measured using light with a wavelength of 587.6 nm (d-line).

[0101] The total number of object-side and image-side surfaces in the lens with nanostructured layers is N. CS The number of lenses in the imaging lens group is E, which satisfies the following condition: 0.5 ≤ N CS / 2E ≤ 1. This further improves the optical performance of the imaging lens. To elaborate further, when at least half of the lenses in the imaging lens are fitted with nanostructure layers, the image quality of the imaging lens becomes more stable. Alternatively, it can satisfy the following condition: 0.59 ≤ N CS / 2E ≤ 1. This allows the imaging lens to maintain image quality even when the number of lenses is increased. Alternatively, it can satisfy the following condition: 0.67 ≤ N. CS / 2E ≤ 1. Alternatively, it can satisfy the following condition: 0.8 ≤ N. CS / 2E ≤ 1. Alternatively, it can satisfy the following condition: 0.9 ≤ N. CS / 2E ≤ 1. Alternatively, it can satisfy the following condition: 0.96 ≤ N. CS / 2E ≤ 1.

[0102] The imaging lens has an average transmittance for light rays in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 It can satisfy the following condition: 90% ≤ T 5254 This improves the image quality of the imaging lens. Furthermore, it satisfies the following condition: 86% ≤ T 5254Furthermore, it satisfies the following condition: 84% ≤ T 5254 .

[0103] The imaging lens has an average transmittance for light rays in the wavelength range of 530 nm to 540 nm, and the average transmittance is T. 5354 It can satisfy the following condition: 90% ≤ T 5354 In addition, it can satisfy the following condition: 86% ≤ T 5354 Furthermore, it satisfies the following condition: 84% ≤ T 5354 .

[0104] The various technical features of the imaging lens disclosed above can be combined and configured to achieve the corresponding effects.

[0105] This disclosure provides an electronic device that includes the aforementioned imaging lens.

[0106] Based on the above implementation methods, specific implementation methods and examples are presented below and described in detail with reference to the accompanying drawings.

[0107] <First Implementation>

[0108] Please refer to Figure 1A The diagram illustrates an imaging lens 100 according to the first embodiment of this disclosure. Figure 1A As can be seen, the imaging lens 100 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 100, the viewing angle of the imaging lens 100 is 85 degrees, and the imaging lens 100 is the main lens. The imaging lens group includes multiple lenses and a lens barrel 120.

[0109] Specifically, the imaging lens group includes lenses 111, 112, 113, 114, 115, 116, 117, and 118 in sequence from the object side to the image side, and lenses 111, 112, 113, 114, 115, 116, 117, and 118 are disposed in the lens barrel 120. The optical characteristics such as the structure and surface shape of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0110] Please refer to Figures 1B to 1F ,in Figure 1B Drawing according to Figure 1A Scanning electron microscope image of the nanostructure layer 130 in the first embodiment. Figure 1C Drawing according to Figure 1A Another scanning electron microscope image of the nanostructure layer 130 in the first embodiment. Figure 1D Drawing according to Figure 1A A scanning electron microscope image of a cross section of lens 111 in the first embodiment. Figure 1E Drawing according to Figure 1AA scanning electron microscope image of another section of lens 111 in the first embodiment. Figure 1F Drawing according to Figure 1A A scanning electron microscope image of another cross-section of lens 111 in the first embodiment. Figures 1A to 1F It is known that the object-side surface and image-side surface of lenses 111, 112, 113, 114, 115, 116, 117, and 118 all contain at least one nanostructure layer and at least one structural connection layer. Taking the object-side surface of lens 111 as an example, the nanostructure layer 130 is irregularly arranged, contains aluminum monoxide crystals, and has a structural scale T2 between 98 nm and 420 nm. The structural connection layer 140 is disposed between the object-side surface of lens 111 and the nanostructure layer 130, and contains at least one silicon dioxide film layer 141. The silicon dioxide film layer 141 is in solid contact with the bottom of the nanostructure layer 130, and the thickness T1 of the silicon dioxide film layer 141 is between 20 nm and 150 nm.

[0111] Depend on Figure 1D It can be seen that the thickness T3 of the structural connection layer 140 is 73.68 nm, and the structural scale T2 of the nanostructure layer 130 is 200.3 nm; from Figure 1E It can be seen that the thickness T3 of the structural connection layer 140 is 76.62 nm, and the structural scale T2 of the nanostructure layer 130 is 232.7 nm; from Figure 1F It can be seen that the thickness T3 of the structural connection layer 140 is 75.15 nm, and the structural scale T2 of the nanostructure layer 130 is 247.4 nm.

[0112] The structural bonding layer 140 stabilizes the nanostructure layer 130, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 130 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes at interfaces and minimizing the chance of light reflection.

[0113] Please refer to Table 4, which shows the refractive indices of lenses 111, 112, 113, 114, 115, 116, 117, and 118. The refractive indices are measured using light with a wavelength of 587.6 nm (d-line).

[0114]

[0115] In the first embodiment, lens 112 can be used as a first lens, and lens 111 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0116] Furthermore, in the imaging lens group, lenses 111, 112, 113, 114, 115, 116, 117, and 118 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the first embodiment, lenses 111 and 112 constitute the first lens group, and lenses 113, 114, 115, 116, 117, and 118 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 112) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 111). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 113, 114, 115, 116, 117, and 118), and the second lens group includes at least one high-refractive-index lens (i.e., lens 113). By setting a nanostructure layer 130 on a high refractive index lens, the chance of light being reflected at the interface can be reduced.

[0117] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 100; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 100.

[0118] Please refer to Tables 5 and 6. Figures 1G to 1I Table 5 shows the transmittance of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first embodiment at wavelengths from 400 nm to 700 nm. Table 6 shows the average transmittance of the imaging lenses of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first embodiment at wavelengths from 540 nm to 590 nm, from 520 nm to 540 nm, and from 530 nm to 540 nm. Figure 1G Drawing according to Figure 1A Transmittance curves of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first implementation method at wavelengths from 400 nm to 700 nm. Figure 1H Drawing according to Figure 1A Transmittance curves of the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first implementation method at wavelengths from 540 nm to 590 nm. Figure 1I Drawing according to Figure 1A Transmittance curves for the first embodiment, second embodiment, first comparative example, and second comparative example of the first embodiment of the first implementation, at wavelengths from 520 nm to 540 nm, wherein the average transmittance of the imaging lenses of the first embodiment, second embodiment, first comparative example, and second comparative example of the first implementation of the first embodiment, the second embodiment, and the first comparative example, the second comparative example, for light in the wavelength range of 540 nm to 590 nm is T. 5459The average transmittance of the imaging lenses in the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first implementation method is T, corresponding to the wavelength range of 520 nm to 540 nm. 5254 The average transmittance of the imaging lenses in the first embodiment, the second embodiment, the first comparative example, and the second comparative example of the first implementation method is T, corresponding to the wavelength range of 530 nm to 540 nm. 5354 It must be noted that the first comparative example, the second comparative example, and the first and second embodiments of the first implementation also include eight lenses, but the lenses of the first comparative example and the second comparative example do not include a nanostructure layer and a structural connection layer.

[0119]

[0120]

[0121]

[0122]

[0123]

[0124]

[0125]

[0126]

[0127]

[0128]

[0129]

[0130]

[0131]

[0132] Imaging lens 100 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and imaging lens 100 has an average transmittance for a wavelength range of 540 nm to 590 nm, where the average transmittance is T. 5459 Imaging lens 100 has an average transmittance for light rays in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 The simulated transmittance of the imaging lens 100 is T. simIt represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 112) is n1, the refractive index of the second lens (i.e., lens 111) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens with the nanostructure layer 130 is N. CS The parameters satisfy the conditions in the following seven tables.

[0133]

[0134] <Second Implementation>

[0135] Please refer to Figure 2A The diagram illustrates the imaging lens 200 according to the second embodiment of this disclosure. Figure 2A As can be seen, the imaging lens 200 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 200, the viewing angle of the imaging lens 200 is 85 degrees, and the imaging lens 200 is the main lens. The imaging lens group includes multiple lenses and a lens barrel 220.

[0136] Specifically, the imaging lens group includes lenses 211, 212, 213, 214, 215, 216, 217, and 218 in sequence from the object side to the image side, and lenses 211, 212, 213, 214, 215, 216, 217, and 218 are disposed in the lens barrel 220. The optical characteristics such as the structure and surface shape of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0137] The object-side and image-side surfaces of lenses 211, 212, 213, 214, 215, 216, 217, and 218 each contain at least one nanostructure layer and at least one structural connection layer. Taking the object-side surface of lens 211 as an example, the nanostructure layer 230 is irregularly arranged, contains aluminum monoxide crystals, and has a structural scale T2 between 98 nm and 420 nm. The structural connection layer (not shown in the figure) is disposed between the object-side surface of lens 211 and the nanostructure layer 230. The structural connection layer contains at least one silicon dioxide film layer 241, which is in solid contact with the bottom of the nanostructure layer 230, and has a thickness T1 between 20 nm and 150 nm.

[0138] The structural bonding layer stabilizes the nanostructure layer 230, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 230 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes between interfaces and minimizing the chance of light reflection.

[0139] Please refer to Table 8, which shows the refractive indices of lenses 211, 212, 213, 214, 215, 216, 217, and 218. The refractive indices are measured using light with a wavelength of 587.6 nm (d-line).

[0140]

[0141] In the second embodiment, lens 212 can be used as a first lens, and lens 211 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0142] Furthermore, in the imaging lens group, lenses 211, 212, 213, 214, 215, 216, 217, and 218 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the second embodiment, lenses 211 and 212 constitute the first lens group, and lenses 213, 214, 215, 216, 217, and 218 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 212) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 211). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 213, 214, 215, 216, 217, and 218), and the second lens group includes at least one high-refractive-index lens (i.e., lens 214). By setting a nanostructure layer 230 on a high refractive index lens, the chance of light being reflected at the interface can be reduced.

[0143] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 200; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 200.

[0144] Please refer to Tables 9, 10, and 11. Figures 2B to 2D Table 9 shows the transmittance of the first to fifth embodiments of the second embodiment at wavelengths from 400 nm to 700 nm; Table 10 shows the transmittance of the third to seventh comparative examples at wavelengths from 400 nm to 700 nm; and Table 11 shows the average transmittance of the imaging lenses of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 540 nm to 590 nm, from 520 nm to 540 nm, and from 530 nm to 540 nm. Figure 2B Drawing according to Figure 2A Transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 400 nm to 700 nm. Figure 2C Drawing according to Figure 2A Transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 540 nm to 590 nm. Figure 2D Drawing according to Figure 2A The transmittance curves of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment at wavelengths from 520 nm to 540 nm are shown in the graph. The average transmittance of the imaging lenses of the first to fifth embodiments and the third to seventh comparative examples of the second embodiment for light in the wavelength range of 540 nm to 590 nm is T. 5459 The average transmittance of the imaging lenses in the first to fifth embodiments and the third to seventh comparative examples of the second embodiment is T for light in the wavelength range of 520 nm to 540 nm. 5254 The average transmittance of the imaging lenses in the first to fifth embodiments and the third to seventh comparative examples of the second embodiment is T for light in the wavelength range of 530 nm to 540 nm. 5354 It must be noted that the third to seventh comparative examples and the first to fifth embodiments of the second embodiment also include eight lenses, but the lenses of the third to seventh comparative examples do not include a nanostructure layer and a structural connection layer.

[0145]

[0146]

[0147]

[0148]

[0149]

[0150]

[0151]

[0152]

[0153]

[0154]

[0155]

[0156]

[0157]

[0158]

[0159]

[0160]

[0161]

[0162]

[0163]

[0164]

[0165]

[0166]

[0167]

[0168] Imaging lens 200 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and imaging lens 200 has an average transmittance for a wavelength range of 540 nm to 590 nm, where the average transmittance is T. 5459 The imaging lens 200 has an average transmittance for light rays in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 The simulated transmittance of the imaging lens 200 is T. sim This represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 212) is n1, the refractive index of the second lens (i.e., lens 211) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens where the nanostructure layer 230 is disposed is N. CS The parameters satisfy the conditions in Table 12 below.

[0169]

[0170] <Third Implementation Method>

[0171] Please refer to Figure 3A The diagram illustrates the imaging lens 300 according to the third embodiment of this disclosure. Figure 3AAs can be seen, the imaging lens 300 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 300, the viewing angle of the imaging lens 300 is 85 degrees, and the imaging lens 300 is the main lens. The imaging lens group includes multiple lenses and a lens barrel 320.

[0172] Specifically, the imaging lens group includes lenses 311, 312, 313, 314, 315, 316, 317, and 318 in sequence from the object side to the image side, and lenses 311, 312, 313, 314, 315, 316, 317, and 318 are disposed in the lens barrel 320. The optical characteristics such as the structure and surface shape of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0173] The object-side and image-side surfaces of lenses 311, 312, 313, 315, 316, and 318 each contain at least one nanostructure layer and at least one structural connection layer. Taking the object-side surface of lens 311 as an example, the nanostructure layer 330 is irregularly arranged, contains alumina crystals, and has a structural scale T2 between 98 nm and 420 nm. The structural connection layer (not shown in the figure) is disposed between the object-side surface of lens 311 and the nanostructure layer 330. The structural connection layer contains at least one silicon dioxide film layer 341, which is in solid contact with the bottom of the nanostructure layer 330, and has a thickness T1 between 20 nm and 150 nm.

[0174] The structural bonding layer stabilizes the nanostructure layer 330, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 330 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes at interfaces and minimizing the chance of light reflection.

[0175] Please refer to Table 13, which shows the refractive indices of lenses 311, 312, 313, 314, 315, 316, 317, and 318. The refractive indices are measured using light with a wavelength of 587.6 nm (d-line).

[0176]

[0177] In the third embodiment, lens 312 can be used as a first lens, and lens 311 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0178] Furthermore, in the imaging lens group, lenses 311, 312, 313, 314, 315, 316, 317, and 318 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the third embodiment, lenses 311 and 312 constitute the first lens group, and lenses 313, 314, 315, 316, 317, and 318 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 312) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 311). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 313, 314, 315, 316, 317, and 318), and the second lens group includes at least one high-refractive-index lens (i.e., lens 314). By setting a nanostructure layer 330 on a high refractive index lens, the chance of light being reflected at the interface can be reduced.

[0179] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 300; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 300.

[0180] Please refer to Tables 14 and 15. Figures 3B to 3D Table 14 shows the transmittance of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 400 nm to 700 nm. Table 15 shows the average transmittance of the imaging lenses of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment for light in wavelength ranges from 540 nm to 590 nm, 520 nm to 540 nm, and 530 nm to 540 nm, respectively. Figure 3B Drawing according to Figure 3A Transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 400 nm to 700 nm. Figure 3C Drawing according to Figure 3A Transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 540 nm to 590 nm. Figure 3D Drawing according to Figure 3A The transmittance curves of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment at wavelengths from 520 nm to 540 nm are shown in the graph. The average transmittance of the imaging lenses of the first to third embodiments and the eighth to tenth comparative examples of the third embodiment for light in the wavelength range of 540 nm to 590 nm is T. 5459The average transmittance of the imaging lenses in the first to third embodiments and the eighth to tenth comparative examples of the third embodiment is T for light in the wavelength range of 520 nm to 540 nm. 5254 The average transmittance of the imaging lenses in the first to third embodiments and the eighth to tenth comparative examples of the third embodiment is T for light in the wavelength range of 530 nm to 540 nm. 5354 It must be noted that the eighth to tenth comparative examples and the first to third embodiments of the third embodiment also include eight lenses, but the lenses of the eighth to tenth comparative examples do not include a nanostructure layer and a structural connection layer.

[0181]

[0182]

[0183]

[0184]

[0185]

[0186]

[0187]

[0188]

[0189]

[0190]

[0191]

[0192]

[0193] Imaging lens 300 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and imaging lens 300 has an average transmittance for a wavelength range of 540 nm to 590 nm, where the average transmittance is T. 5459 The imaging lens 300 has an average transmittance for light rays in the wavelength range of 520 nm to 540 nm, and the average transmittance is T. 5254 The simulated transmittance of the 300mm imaging lens is T. simThis represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 312) is n1, the refractive index of the second lens (i.e., lens 311) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens where the nanostructure layer 330 is disposed is N. CS The parameters satisfy the conditions in the following sixteen tables.

[0194]

[0195] <Fourth Implementation>

[0196] Please refer to Figure 4 The diagram illustrates the imaging lens 400 according to the fourth embodiment of this disclosure. Figure 4 As can be seen, the imaging lens 400 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 400, the imaging lens 400 has an angle of view of 79 degrees, and the imaging lens 400 is the main lens. The imaging lens group includes multiple lenses and a lens barrel 420.

[0197] Specifically, the imaging lens group includes lenses 411, 412, 413, 414, 415, 416, and 417 in sequence from the object side to the image side, and lenses 411, 412, 413, 414, 415, 416, and 417 are disposed in the lens barrel 420. The structure, surface shape, and other optical features of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0198] The object-side and image-side surfaces of lenses 411, 413, 415, 416, and 417 each contain at least one nanostructure layer and at least one structural connection layer. Taking the image-side surface of lens 417 as an example, the nanostructure layer 430 is irregularly arranged, contains aluminum monoxide crystals, and has a structural scale T2 between 98 nm and 420 nm. The structural connection layer (not shown in the figure) is disposed between the image-side surface of lens 417 and the nanostructure layer 430. The structural connection layer contains at least one silicon dioxide film layer 441, which is in solid contact with the bottom of the nanostructure layer 430, and has a thickness T1 between 20 nm and 150 nm.

[0199] Lens 411 is a Fresnel lens, and an anti-reflective coating 451 is disposed on the object-side surface of lens 411. Furthermore, lens 413 is a super-lens, and an anti-reflective coating 452 is disposed on the image-side surface of lens 413. Specifically, anti-reflective coatings 451 and 452 are composed of a nanostructure layer and a structural connection layer.

[0200] The structural bonding layer stabilizes the nanostructure layer 430, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 430 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes at interfaces and minimizing the chance of light reflection.

[0201] Please refer to Table 17, which shows the refractive indices of lenses 411, 412, 413, 414, 415, 416, and 417. The refractive indices are measured using light with a wavelength of 587.6 nm (d-line).

[0202]

[0203] In the fourth embodiment, lens 412 can be used as a first lens, and lens 411 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0204] Furthermore, in the imaging lens group, lenses 411, 412, 413, 414, 415, 416, and 417 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the fourth embodiment, lenses 411 and 412 constitute the first lens group, and lenses 413, 414, 415, 416, and 417 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 412) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 411). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 413, 414, 415, 416, and 417), and the second lens group includes at least one high-refractive-index lens (i.e., lens 414). By providing a nanostructure layer 430 on the high-refractive-index lens, the chance of light reflection at the interface can be reduced.

[0205] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 400; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 400.

[0206] The imaging lens 400 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and the simulated transmittance of the imaging lens 400 is T. simThis represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 412) is n1, the refractive index of the second lens (i.e., lens 411) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens where the nanostructure layer 430 is disposed is N. CS The parameters satisfy the conditions in Table 18 below.

[0207]

[0208] <Fifth Implementation>

[0209] Please refer to Figure 5 The diagram illustrates the imaging lens 500 according to the fifth embodiment of this disclosure. Figure 5 As can be seen, the imaging lens 500 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 500, the imaging lens 500 has a viewing angle of 128 degrees, and the imaging lens 500 is an ultra-wide-angle lens. The imaging lens group includes multiple lenses and a lens barrel 520.

[0210] Specifically, the imaging lens group includes lenses 511, 512, 513, 514, 515, 516, and 517 in sequence from the object side to the image side, and lenses 511, 512, 513, 514, 515, 516, and 517 are disposed in the lens barrel 520. The optical characteristics such as the structure and surface shape of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0211] The object-side and image-side surfaces of lenses 511, 512, 514, 515, 516, and 517 each contain at least one nanostructure layer and at least one structural connection layer. Taking the object-side surface of lens 512 as an example, the nanostructure layer 530 is irregularly arranged and contains alumina crystals; the structural connection layer (not shown) is disposed between the object-side surface of lens 512 and the nanostructure layer 530, and the structural connection layer contains a silicon dioxide film layer 5411 and a titanium dioxide film layer 5412, and the silicon dioxide film layer 5411 is in solid contact with the bottom of the nanostructure layer 530.

[0212] In the fifth embodiment, the structural connection layer is a film layer formed by alternating stacking of high refractive index layer and low refractive index layer, and the lens 513 is a molded glass lens, wherein the titanium dioxide film layer 5412 and the silicon dioxide film layer 5411 are high refractive index layer and low refractive index layer, respectively, but the distribution of high and low refractive index is not limited to this. The anti-reflection effect can be further improved by alternating stacking of high refractive index layer and low refractive index layer.

[0213] The structural bonding layer stabilizes the nanostructure layer 530, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 530 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes between interfaces and minimizing the chance of light reflection.

[0214] Please refer to Table 19, which shows the refractive indices of lenses 511, 512, 513, 514, 515, 516, and 517. The refractive indices are measured using light with a wavelength of 587.6 nm (d-line).

[0215]

[0216] In the fifth embodiment, lens 512 can be used as a first lens, and lens 511 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0217] Furthermore, in the imaging lens group, lenses 511, 512, 513, 514, 515, 516, and 517 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the fifth embodiment, lenses 511 and 512 constitute the first lens group, and lenses 513, 514, 515, 516, and 517 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 512) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 511). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 513, 514, 515, 516, and 517), and the second lens group includes at least one high-refractive-index lens (i.e., lens 515). By providing a nanostructure layer 530 on the high-refractive-index lens, the chance of light reflection at the interface can be reduced.

[0218] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 500; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 500.

[0219] Imaging lens 500 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and the simulated transmittance of imaging lens 500 is T. simIt represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 512) is n1, the refractive index of the second lens (i.e., lens 511) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens, where the nanostructure layer 530 is disposed, is N. CS The parameters satisfy the conditions in the following twenty-listed table.

[0220]

[0221] <Sixth Implementation Method>

[0222] Please refer to Figure 6 The diagram illustrates the imaging lens 600 according to the sixth embodiment of this disclosure. Figure 6 As can be seen, the imaging lens 600 includes an imaging lens group (not shown in the figure), an optical axis X passes through the imaging lens 600, the viewing angle of the imaging lens 600 is 85 degrees, and the imaging lens 600 is the main lens. The imaging lens group includes multiple lenses and a lens barrel 620.

[0223] Specifically, the imaging lens group includes lenses 611, 612, 613, 614, 615, 616, 617, and 618 in sequence from the object side to the image side, and lenses 611, 612, 613, 614, 615, 616, 617, and 618 are disposed in the lens barrel 620. The optical features such as the structure and surface shape of the lenses can be configured according to different imaging requirements and are not limited thereto.

[0224] The image-side surface of lens 611, the object-side and image-side surfaces of lenses 613, 614, 615, and 617, and the object-side surface of lens 618 all include at least one nanostructure layer and at least one structural connection layer. Taking the object-side surface of lens 615 as an example, the nanostructure layer 630 is irregularly arranged and contains alumina crystals; the structural connection layer (not shown) is disposed between the object-side surface of lens 615 and the nanostructure layer 630, and the structural connection layer includes at least one silicon dioxide film layer 641, and the silicon dioxide film layer 641 is in solid contact with the bottom of the nanostructure layer 630.

[0225] The structural bonding layer stabilizes the nanostructure layer 630, allowing it to be applied to lenses made of various materials and improving its adhesion stability. Specifically, the nanostructure layer 630 has pores, causing its equivalent refractive index to gradually change towards 1.00, reducing refractive index changes between interfaces and minimizing the chance of light reflection.

[0226] Please refer to Table 21, which shows the refractive indices of lenses 611, 612, 613, 614, 615, 616, 617, and 618. The refractive index is measured using light with a wavelength of 587.6 nm (d-line).

[0227]

[0228] In the sixth embodiment, lens 612 can be used as a first lens, and lens 611 can be used as a second lens. The refractive index of the first lens is different from that of the second lens.

[0229] Furthermore, in the imaging lens group, lenses 611, 612, 613, 614, 615, 616, 617, and 618 are divided into a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. In the sixth embodiment, lenses 611 and 612 constitute the first lens group, and lenses 613, 614, 615, 616, 617, and 618 constitute the second lens group. The first lens group includes a high-refractive-index lens (i.e., lens 612) on the image side, and the adjacent lens at one object-side end of the high-refractive-index lens is a low-refractive-index lens (i.e., lens 611). The second lens group includes the remaining lenses at one image-side end of the first lens group (i.e., lenses 613, 614, 615, 616, 617, and 618), and the second lens group includes at least one high-refractive-index lens (i.e., lens 613). By setting a nanostructure layer 630 on a high refractive index lens, the chance of light being reflected at the interface can be reduced.

[0230] Specifically, a high-refractive-index lens may be a lens with a refractive index greater than 1.6, or a lens with a refractive index higher than the average in the imaging lens 600; a low-refractive-index lens may be a lens with a refractive index less than 1.6, or a lens with a refractive index lower than the average in the imaging lens 600.

[0231] Imaging lens 600 has a transmittance attenuation index, which is related to the number of lenses in the imaging lens group and a transmittance attenuation simulation constant. The transmittance attenuation index is Tdi; the number of lenses in the imaging lens group is E; and the simulated transmittance of imaging lens 600 is T. sim This represents the simulated transmittance of light in the wavelength range of 540 nm to 590 nm; the refractive index of the first lens (i.e., lens 612) is n1, the refractive index of the second lens (i.e., lens 611) is n2, and the difference between the refractive indices of the first lens and the second lens is Δn; the total number of object-side and image-side surfaces in the lens where the nanostructure layer 630 is disposed is N. CS The parameters satisfy the conditions in the following table (22).

[0232]

[0233] <Seventh Implementation>

[0234] Please refer to Figure 7A and Figure 7B ,in Figure 7A A schematic diagram of the electronic device 70 according to the seventh embodiment of this disclosure is shown. Figure 7B Drawing according to Figure 7A Block diagram of electronic device 70 in the seventh embodiment. Figure 7A and Figure 7B As can be seen, the electronic device 70 is a smartphone and includes an imaging lens (not shown), wherein the imaging lens includes an imaging lens group (not shown), and the imaging lens group includes multiple lenses (not shown). Further, the lens includes a first lens and a second lens, wherein the first lens and the second lens respectively include at least one nanostructure layer (not shown) and at least one structural connection layer (not shown); or, at least three lenses in the lens each include at least one nanostructure layer and at least one structural connection layer. Therefore, by setting nanostructure layers in the lenses, the imaging quality of the imaging lenses in the electronic device can be made more consistent when switching imaging lenses, reducing the jerky feeling when switching imaging lenses.

[0235] In the seventh embodiment, the electronic device 70 includes four imaging lenses: a telephoto lens 711, an ultra-wide-angle lens 712, an ultra-telephoto lens 713, and a wide-angle main lens 714. Furthermore, by switching between the imaging lenses with different viewing angles, the electronic device 70 can achieve optical zoom functionality. It must be noted that the lens cover 72 is only intended to illustrate the telephoto lens 711, ultra-wide-angle lens 712, ultra-telephoto lens 713, and wide-angle main lens 714 inside the electronic device 70, and does not indicate that the lens cover 72 is detachable. Specifically, the wide-angle main lens 714 can be the imaging lens of the first to fourth embodiments and the sixth embodiment described above, and the ultra-wide-angle lens 712 can be the imaging lens of the fifth embodiment described above, but is not limited thereto.

[0236] The electronic device 70 also includes an electronic photosensitive element 73 and a user interface 74, wherein the electronic photosensitive element 73 is disposed on the imaging surface of the telephoto lens 711, the ultra-wide-angle lens 712, the ultra-telephoto lens 713 and the wide-angle main lens 714 (not shown in the figure), and the user interface 74 may be a touch screen or a display screen, and is not limited thereto.

[0237] Furthermore, the user enters the shooting mode through the user interface 74 of the electronic device 70. At this time, the telephoto lens 711, the ultra-wide-angle lens 712, the super telephoto lens 713, and the wide-angle main lens 714 converge the imaging light onto the electronic image sensor 73 and output the relevant electronic signal of the image to the image signal processor (ISP) 75.

[0238] Depending on the camera specifications of the electronic device 70, the electronic device 70 may further include an optical image stabilization component 76, which may be an OIS image stabilization feedback device. Furthermore, the electronic device 70 may also include at least one auxiliary optical element (not shown) and at least one sensing element 77. In the seventh embodiment, the auxiliary optical element is a flash module 78 and a focus assist module 79. The flash module 78 can be used to compensate for color temperature, and the focus assist module 79 may be an infrared rangefinder, a laser focus module, etc. The sensing element 77 can have the function of sensing physical momentum and kinetic energy, such as an accelerometer, gyroscope, or Hall effect element, to sense the shaking and tremors caused by the user's hand or the external environment. This facilitates the autofocus function and optical image stabilization component 76 of the imaging lenses (i.e., telephoto lens 711, ultra-wide-angle lens 712, super telephoto lens 713, and wide-angle main lens 714) in the electronic device 70, resulting in good image quality. This helps the electronic device 70 according to the present invention to have multiple shooting modes, such as optimized Selfie, low-light HDR (High Dynamic Range) imaging, and high-resolution 4K (4K Resolution) video recording. In addition, the user can directly view the camera's shooting screen from the touch screen and manually operate the framing on the touch screen to achieve a WYSIWYG autofocus function.

[0239] In addition, the electronic device 70 may also include, but is not limited to, a display unit, a control unit, a storage unit, a random access memory (RAM), a read-only memory (ROM), or a combination thereof.

[0240] In detail, the telephoto lens 711 has a first perspective, the ultra-wide-angle lens 712 has a second perspective, the super telephoto lens 713 has a third perspective, and the wide-angle main lens 714 has a fourth perspective, wherein the first perspective is FOV1, the second perspective is FOV2, the third perspective is FOV3, and the fourth perspective is FOV4. The parameters satisfy the conditions in the following table.

[0241]

[0242] Furthermore, the structure and arrangement of the remaining components in the seventh embodiment are the same as those in the first to sixth embodiments, and will not be described again here.

[0243] Although the present invention has been disclosed above with reference to embodiments and examples, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the appended claims.

Claims

1. An imaging lens, characterized in that, An optical axis passes through the imaging lens and includes: An imaging lens group comprising multiple lenses, wherein the multiple lenses include: A first lens and a second lens, wherein the refractive index of the first lens and the refractive index of the second lens are different, and respectively include: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising alumina crystals, and the structural scale of the at least one nanostructure layer being between 98 nm and 420 nm; and At least one structural connection layer is disposed between the surface of the first lens and the at least one nanostructure layer and between the surface of the second lens and the at least one nanostructure layer. The at least one structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the at least one nanostructure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens has a transmittance attenuation index, which is related to the number of the plurality of lenses in the imaging lens group and a transmittance attenuation simulation constant. Wherein, the transmittance attenuation index is Tdi, the number of the plurality of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The difference between the refractive index of the first lens and the refractive index of the second lens is Δn, and the total number of object-side and image-side surfaces of the plurality of lenses having the at least one nanostructure layer is N. CS It satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.9; 90% ≤ T 5459 ； 0.065 ≤ Δn ≤ 0.82; and 0.8 ≤ N CS / 2E ≤ 1。 2. The imaging lens as described in claim 1, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 520 nm to 540 nm, and this average transmittance is T. 5254 It satisfies the following conditions: 90% ≤ T 5254 。 3. The imaging lens as described in claim 2, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 530 nm to 540 nm, and this average transmittance is T. 5354 It satisfies the following conditions: 90% ≤ T 5354 。 4. An electronic device, characterized in that, Include: The imaging lens as described in claim 1.

5. An imaging lens, characterized in that, An optical axis passes through the imaging lens and includes: An imaging lens group comprising multiple lenses, wherein the multiple lenses include: A first lens and a second lens, wherein the refractive index of the first lens and the refractive index of the second lens are different, and respectively include: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising alumina crystals, and the structural scale of the at least one nanostructure layer being between 98 nm and 420 nm; and At least one structural connection layer is disposed between the surface of the first lens and the at least one nanostructure layer and between the surface of the second lens and the at least one nanostructure layer. The at least one structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the at least one nanostructure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens has a transmittance attenuation index, which is related to the number of the plurality of lenses in the imaging lens group and a transmittance attenuation simulation constant. Wherein, the transmittance attenuation index is Tdi, the number of the plurality of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The first lens has a refractive index of n1, the second lens has a refractive index of n2, and the total number of object-side and image-side surfaces of the plurality of lenses having the at least one nanostructure layer is N. CS It satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.9; 90% ≤ T 5459 ； n1 > 1.6； n² < 1.6; and 0.8 ≤ N CS / 2E ≤ 1。 6. The imaging lens as described in claim 5, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 520 nm to 540 nm, and this average transmittance is T. 5254 It satisfies the following conditions: 90% ≤ T 5254 。 7. The imaging lens as described in claim 6, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 530 nm to 540 nm, and this average transmittance is T. 5354 It satisfies the following conditions: 90% ≤ T 5354 。 8. An electronic device, characterized in that, Include: The imaging lens as described in claim 5.

9. An imaging lens, characterized in that, An optical axis passes through the imaging lens and includes: An imaging lens group comprising multiple lenses, wherein at least three of the multiple lenses respectively comprise: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising alumina crystals, and the structural scale of the at least one nanostructure layer being between 98 nm and 420 nm; and At least one structural connection layer is disposed between the surface of each lens and the at least one nanostructure layer. The at least one structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the at least one nanostructure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens group comprises a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the adjacent lens on the object side of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses at one image-side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of the plurality of lenses in the imaging lens group and a transmittance attenuation simulation constant. Wherein, the transmittance attenuation index is Tdi, the number of the plurality of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The total number of object-side and image-side surfaces of the plurality of lenses in which the plurality of nanostructure layers are disposed is N. CS It satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.88; 90% ≤ T 5459 ;as well as 0.5 ≤ N CS / 2E ≤ 1。 10. The imaging lens as described in claim 9, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 520 nm to 540 nm, and this average transmittance is T. 5254 It satisfies the following conditions: 90% ≤ T 5254 。 11. The imaging lens as described in claim 10, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 530 nm to 540 nm, and this average transmittance is T. 5354 It satisfies the following conditions: 90% ≤ T 5354 。 12. The imaging lens as described in claim 9, characterized in that, The imaging lens group comprises E lenses, and the total number of object-side and image-side surfaces of the lenses in which the multiple nanostructure layers are disposed is N. CS It satisfies the following conditions: 0.8 ≤ N CS / 2E ≤ 1。 13. An electronic device, characterized in that, Include: The imaging lens as described in claim 9.

14. An imaging lens, characterized in that, An optical axis passes through the imaging lens and includes: An imaging lens group comprising multiple lenses, wherein at least three of the multiple lenses respectively comprise: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising alumina crystals, and the structural scale of the at least one nanostructure layer being between 98 nm and 420 nm; and At least one structural connection layer is disposed between the surface of each lens and the at least one nanostructure layer. The at least one structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the at least one nanostructure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens group comprises a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the adjacent lens on the object side of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses at one image-side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of the plurality of lenses in the imaging lens group and a transmittance attenuation simulation constant. Wherein, the transmittance attenuation index is Tdi, the number of the plurality of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The total number of object-side and image-side surfaces of the plurality of lenses in which the plurality of nanostructure layers are disposed is N. CS It satisfies the following conditions: 0.81 ≤ Tdi ≤ 0.84; 87.6% ≤ T 5459 ≤ 92%; and 0.59 ≤ N CS / 2E ≤ 1。 15. The imaging lens as described in claim 14, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 520 nm to 540 nm, and this average transmittance is T. 5254 It satisfies the following conditions: 86% ≤ T 5254 。 16. The imaging lens as described in claim 15, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 530 nm to 540 nm, and this average transmittance is T. 5354 It satisfies the following conditions: 86% ≤ T 5354 。 17. The imaging lens as described in claim 14, characterized in that, The imaging lens group comprises E lenses, and the total number of object-side and image-side surfaces of the lenses having the at least one nanostructure layer is N. CS It satisfies the following conditions: 0.9 ≤ N CS / 2E ≤ 1。 18. An electronic device, characterized in that, Include: The imaging lens as described in claim 14.

19. An imaging lens, characterized in that, An optical axis passes through the imaging lens and includes: An imaging lens group comprising multiple lenses, wherein at least three of the multiple lenses respectively comprise: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising alumina crystals, and the structural scale of the at least one nanostructure layer being between 98 nm and 420 nm; and At least one structural connection layer is disposed between the surface of each lens and the at least one nanostructure layer. The at least one structural connection layer includes at least one silicon dioxide film layer, which is in solid contact with the bottom of the at least one nanostructure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens group comprises a first lens group and a second lens group. The first lens group is closer to the object side than the second lens group, and the number of lenses in the first lens group is less than the number of lenses in the second lens group. The first lens group includes a high-refractive-index lens on the image side, and the adjacent lens on the object side of the high-refractive-index lens is a low-refractive-index lens. The second lens group includes the remaining lenses at one image-side end of the first lens group, and the second lens group includes at least one high-refractive-index lens. The imaging lens has a transmittance attenuation index, which is related to the number of the plurality of lenses in the imaging lens group and a transmittance attenuation simulation constant. Wherein, the transmittance attenuation index is Tdi, the number of the plurality of lenses in the imaging lens group is E, the transmittance attenuation simulation constant is c, and the imaging lens has an average transmittance for a wavelength range of 540 nm to 590 nm, the average transmittance being T. 5459 The total number of object-side and image-side surfaces of the plurality of lenses in which the plurality of nanostructure layers are disposed is N. CS It satisfies the following conditions: 0.78 ≤ Tdi ≤ 0.80; 86% ≤ T 5459 ≤ 91%; and 0.67 ≤ N CS / 2E ≤ 1。 20. The imaging lens as described in claim 19, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 520 nm to 540 nm, and this average transmittance is T. 5254 It satisfies the following conditions: 84% ≤ T 5254 。 21. The imaging lens as described in claim 20, characterized in that, The imaging lens has an average transmittance for light in the wavelength range of 530 nm to 540 nm, and this average transmittance is T. 5354 It satisfies the following conditions: 84% ≤ T 5354 。 22. The imaging lens as described in claim 19, characterized in that, The imaging lens group comprises E lenses, and the total number of object-side and image-side surfaces of the lenses in which the multiple nanostructure layers are disposed is N. CS It satisfies the following conditions: 0.96 ≤ N CS / 2E ≤ 1。 23. An electronic device, characterized in that, Include: The imaging lens as described in claim 19.

Images