Semiconductor device

Abstract

A semiconductor device includes an insulating substrate, a first conductor portion and a second conductor portion formed on the insulating substrate, a semiconductor element disposed on the first conductor portion, a first terminal in a flat plate shape connected to a first electrode of the semiconductor element, a second terminal in a flat plate shape connected to the first conductor portion, a connecting member electrically connecting a control electrode of the semiconductor element and the second conductor portion, a supporting member in a flat plate shape disposed at a predetermined interval with respect to the second conductor portion, a pin terminal in a rod shape supported in a state of being inserted into the supporting member and connected to the second conductor portion, and a sealing resin sealing the insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connecting member, and the supporting member.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Japanese Patent Application No. 2021-115200, filed on July 12, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to a semiconductor device. Background Technology

[0004] The semiconductor device disclosed in Japanese Patent No. 6850938 includes: a substrate on which a semiconductor chip is mounted; pin terminals connected to wiring patterns on the substrate; and a lead frame that supports the pin terminals and electrically connects the electrodes of the semiconductor chip to the pin terminals. Summary of the Invention

[0005] In the aforementioned prior art, to enable the flow of large currents, the thickness of the lead frame needs to be increased. This lead frame supports the pin terminals and electrically connects the electrodes of the semiconductor chip to the pin terminals. However, when the thickness of the lead frame is increased, the fine machining of the lead frame becomes difficult. Therefore, there are problems such as difficulty in stable pin terminal pressing (support) and an increase in the size of the semiconductor device due to the increase in the size of the lead frame.

[0006] This disclosure addresses the aforementioned problems, and its purpose is to provide a semiconductor device capable of handling high currents and being miniaturized.

[0007] The semiconductor device of the first aspect of this disclosure includes: an insulating substrate; a first conductor portion and a second conductor portion formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a plate-shaped first terminal connected to a first electrode of the semiconductor element; a plate-shaped second terminal connected to the first conductor portion; a connecting member electrically connecting a control electrode of the semiconductor element and the second conductor portion; a plate-shaped support member disposed at a predetermined interval relative to the second conductor portion; a rod-shaped pin terminal supported in a state of insertion into the support member and connected to the second conductor portion; and a sealing resin sealing the insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connecting member, and the support member.

[0008] According to this disclosure, a first conductor portion and a second conductor portion are formed on an insulating substrate, and a semiconductor element is disposed on the first conductor portion. A first plate-shaped first terminal is connected to a first electrode of the semiconductor element, and a second plate-shaped second terminal is connected to the first conductor portion. The control electrode of the semiconductor element and the second conductor portion are electrically connected via a connecting member. A plate-shaped support member is disposed at a predetermined interval relative to the second conductor portion, and a rod-shaped pin terminal connected to the second conductor portion is supported in a state of being inserted into the support member. The insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connecting member, and the support member are sealed with a sealing resin. In this disclosure, the first terminal, the second terminal, and the support member for the supporting pin terminal are configured as different components. Therefore, the first terminal, the second terminal, and the support member can be manufactured using plate materials with different plate thicknesses. Therefore, even if the plate thickness of the first terminal and the second terminal is increased in response to a large current, the plate thickness of the support member can be reduced, thus suppressing large-scale development and enabling miniaturization of the semiconductor device. Attached Figure Description

[0009] Exemplary embodiments of this disclosure will be described in detail with reference to the following accompanying drawings, wherein:

[0010] Figure 1 This is a perspective view showing the semiconductor device involved in the implementation method;

[0011] Figure 2 This is a perspective view showing a state in which the sealing resin is omitted in the semiconductor device according to the embodiment;

[0012] Figure 3 This is a top view showing a state in which the sealing resin is omitted in the semiconductor device according to the embodiment;

[0013] Figure 4 It is a top view showing the structure of the insulating substrate and its surrounding components;

[0014] Figure 5 This is a top view showing the insulating substrate;

[0015] Figure 6 This is a three-dimensional view showing the first terminal;

[0016] Figure 7 This is a three-dimensional view showing the second terminal;

[0017] Figure 8 It is a three-dimensional diagram showing an internally threaded component;

[0018] Figure 9 This is a sectional view showing an internally threaded component;

[0019] Figure 10It is a perspective view showing the structure of the curved portion and the front end connecting portion of the first terminal and its surrounding components;

[0020] Figure 11 This indicates the state in which the front-end connector and the third conductor portion of the insulating substrate are joined by a conductive bonding material. Figure 10 The corresponding 3D image;

[0021] Figure 12 This is a perspective view showing the curved portion and the front end connection portion of the first terminal;

[0022] Figure 13 It is a three-dimensional diagram showing the connecting parts;

[0023] Figure 14 It is a three-dimensional diagram showing the structure of the connecting parts and their surrounding parts;

[0024] Figure 15 This is a top view showing the pressed-in state of the pin terminal relative to the through hole of the support component;

[0025] Figure 16 It is a three-dimensional diagram showing the pin terminals;

[0026] Figure 17 It is a side view showing a portion of the pin terminals, support components, and insulating substrate;

[0027] Figure 18 This is a first top view showing the state of the semiconductor device during manufacturing according to the embodiment;

[0028] Figure 19 This is a second top view showing the state of the semiconductor device during manufacturing according to the embodiment;

[0029] Figure 20 This is a third top view showing the state of the semiconductor device during manufacturing according to the embodiment;

[0030] Figure 21 This is a perspective view showing a first modified example of the second terminal;

[0031] Figure 22 This is a perspective view showing a second modified example of the second terminal;

[0032] Figure 23 This is a perspective view showing a first modified example of the connecting component;

[0033] Figure 24 This is a perspective view showing a second modified example of the connecting component;

[0034] Figure 25 This is a perspective view showing the first modified example of the pin terminal;

[0035] Figure 26 This is a top view showing the insertion state of the pin terminal into the support member in the first modified example;

[0036] Figure 27 This is a perspective view showing a second modified example of the pin terminal;

[0037] Figure 28 This is a top view showing the insertion state of the pin terminal into the support member in the second modification example;

[0038] Figure 29 This is a perspective view showing a third modified example of the pin terminal; and

[0039] Figure 30 This is a side view showing the insertion state of the pin terminal into the support member in the third variation. Detailed Implementation

[0040] Below, refer to Figures 1 to 30 A semiconductor device 10 according to one embodiment of this disclosure will be described. In this embodiment, for ease of explanation, the directions represented by FR, RR, LH, RH, UP, and UN, appropriately shown in each figure, will be defined as forward direction, backward direction, left direction, right direction, up direction, and down direction, thereby explaining the position and orientation of the constituent elements. In addition, in each figure, some reference numerals are sometimes omitted for easy observation of the figures.

[0041] like Figure 1 As shown, the semiconductor device 10 according to this embodiment is a generally rectangular parallelepiped shape that is elongated in the front-to-back direction and flattened in the vertical direction. Figures 1-5 As shown, the semiconductor device 10 includes: an insulating substrate 12; a first conductor portion 14, a second conductor portion 16, and a third conductor portion 18 formed on the insulating substrate 12; a semiconductor element 20 disposed on the first conductor portion 14; a flat first terminal 30 connected to the source electrode (first electrode) 22 of the semiconductor element 20; a flat second terminal 40 connected to the first conductor portion 14; a connecting member 50 electrically connecting the gate electrode (control electrode) 24 of the semiconductor element 20 to the second conductor portion 16; two flat support members 52 disposed at a predetermined interval relative to the second conductor portion 16 and the third conductor portion 18; two rod-shaped pin terminals 56 supported in a state of being inserted into the two support members 52 and connected to the second conductor portion 16 and the third conductor portion 18 respectively; and a sealing resin 60 sealing the insulating substrate 12, the first conductor portion 14, the second conductor portion 16, the third conductor portion 18, the semiconductor element 20, the connecting member 50, and the two support members 52.

[0042] The insulating substrate 12 is a DCB (Direct Copper Bonding) ceramic substrate on which a heat dissipation metal plate is formed on its lower surface (back side). This insulating substrate 12 can also be a printed circuit board or the like. The insulating substrate 12 is formed as a rectangular flat plate and is positioned at the center of the semiconductor device 10 in the front-back direction, with the vertical direction of the semiconductor device 10 as its thickness direction. On the upper surface of the insulating substrate 12, a first conductor portion 14, a second conductor portion 16, and a third conductor portion 18 are formed as a conductor pattern (in this case, a copper pattern). The first conductor portion 14 is formed at the center of the insulating substrate 12, and the second conductor portion 16 and the third conductor portion 18 are formed at the left and right edges of the insulating substrate 12. The first conductor portion 14, the second conductor portion 16, and the third conductor portion 18 are insulated from each other.

[0043] like Figure 4 and Figure 5 As shown, a semiconductor element 20 is disposed on the first conductor portion 14. The semiconductor element 20 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The semiconductor element 20 has: a drain electrode (not shown), which serves as a second electrode formed on one side (the surface (lower surface) on the side of the insulating substrate 12); a source electrode 22, which serves as a first electrode formed on the other side (the surface (upper surface) opposite to the insulating substrate 12); and a gate electrode 24, which serves as a control electrode.

[0044] The drain electrode of the semiconductor element 20 is bonded to the first conductor portion 14 via a conductive bonding material. A conductor plate 26 is disposed above the source electrode 22 of the semiconductor element 20; this conductor plate is made of a conductive flat plate material (in this case, a copper plate) (see reference). Figure 4 The conductor plate 26 is bonded to the source electrode 22 via a conductive bonding material. Furthermore, in this embodiment, solder is used as the conductive bonding material. The solder may also be lead-free solder. Additionally, the conductive bonding material is not limited to solder; it may also be an alloy or metal with conductive and adhesive properties, or a silver paste or a conductive adhesive containing silver nanoparticles.

[0045] like Figures 1-3 as well as Figure 6 As shown, the first terminal 30 is configured as a flat plate and is disposed at the front of the semiconductor device 10. The first terminal 30 is equivalent to a "terminal component". The first terminal 30 is manufactured by stamping a conductive flat plate material (in this case, a copper plate). The first terminal 30 integrally has an internal terminal portion 30A and an external terminal portion 30B, the internal terminal portion being disposed in a sealing resin 60 (see reference 60). Figure 1Inside the outer terminal portion, the sealing resin 60 is exposed externally.

[0046] The external terminal portion 30B is a generally rectangular flat plate with the thickness direction of the semiconductor device 10 along its vertical direction. The internal terminal portion 30A has a downwardly extending portion 30A1 extending from the rear end of the external terminal portion 30B, and a connecting portion 30A2 extending rearward from the rear end of the downwardly extending portion 30A1. The connecting portion 30A2 is disposed above the conductor plate 26 and is connected to the conductor plate 26 via solder, which is a conductive bonding material. Thus, the first terminal 30 is electrically connected to the source electrode 22 via the conductor plate 26 and the solder.

[0047] like Figures 1-3 as well as Figure 7 As shown, the second terminal 40 is configured as a flat plate and is disposed at the rear of the semiconductor device 10. The second terminal 40 is manufactured by stamping a conductive flat plate material (in this case, a copper plate). The second terminal 40 integrally has an internal terminal portion 40A and an external terminal portion 40B, the internal terminal portion being disposed in a sealing resin 60 (see reference 10000). Figure 1 Inside the outer terminal portion, the sealing resin 60 is exposed externally.

[0048] The external terminal portion 40B is a generally rectangular flat plate with the vertical direction of the semiconductor device 10 as its thickness direction. The internal terminal portion 40A extends downward from the front end of the external terminal portion 40B. A forward-bending joint portion 40A1 is formed at the lower end of the internal terminal portion 40A. The joint portion 40A1 is joined to the rear end of the first conductor portion 14 on the insulating substrate 12 via a conductive bonding material. Thus, the second terminal 40 is electrically connected to the drain electrode of the semiconductor element 20 via the conductive bonding material and the first conductor portion 14.

[0049] Circular insertion holes 36 and 42 are formed at the center of the outer terminal portion 30B of the first terminal 30 and the center of the outer terminal portion 40B of the second terminal 40, respectively. These insertion holes penetrate the outer terminal portions 30B and 40B in the thickness direction. Internally threaded components 46 (see reference) are inserted into and fixed in these insertion holes 36 and 42, respectively. Figure 8 and Figure 9 The internally threaded component 46 is a bag-shaped internally threaded nut and has a bottomed cylindrical shape with an upward opening. An internally threaded portion 48 is formed on the inner circumference of the internally threaded component 46.

[0050] The open-side end (one end) of the internally threaded component 46 is inserted (pressed in) into the corresponding insertion holes 36 and 42 of the external terminal portions 30B and 40B, respectively. A brim-shaped flange portion 46A is formed on the outer peripheral surface of the open side of the internally threaded component 46, which abuts against the lower surface of the external terminal portions 30B and 40B. The other end of the internally threaded component 46 is sealed in sealing resin 60. Furthermore, this embodiment is not limited to the structure in which one end of the internally threaded component 46 is pressed into the insertion holes 36 and 42 and fixed to the first terminal 30 and the second terminal 40, but may also be configured to be fixed to the first terminal 30 and the second terminal 40 by means of adhesive bonding or the like. In addition, this embodiment is not limited to the structure in which the internally threaded component 46 is fixed to the first terminal 30 and the second terminal 40. That is, this embodiment may, for example, be configured as follows: the external terminal portions 30B and 40B are flanged to form a cylindrical upright portion, and an internally threaded portion 48 is formed on the inner periphery of the upright portion.

[0051] By fixing the aforementioned internally threaded component 46 to the first terminal 30 and the second terminal 40, and providing internally threaded portions on the first terminal 30 and the second terminal 40, crimp terminals, busbars, etc., can be connected to the first terminal 30 and the second terminal 40 via threaded fastening. These crimp terminals, busbars, etc., are installed in external wiring.

[0052] like Figure 1 As shown, the front end of the outer terminal portion 30B of the first terminal 30 becomes a protrusion 30B1 that protrudes forward from the front end of the sealing resin 60. The rear end of the outer terminal portion 40B of the second terminal 40 becomes a protrusion 40B1 that protrudes rearward from the rear end of the sealing resin 60. By using these protrusions 30B1 and 40B1, the upper surfaces (surfaces with internal threads) of the outer terminal portions 30B and 40B are brought into contact with the molding die (upper die) used to mold the sealing resin 60. By pressing the protrusions 30B1 and 40B1 from the back with the molding die (lower die), they are pressed tightly against the upper die. Thus, the upper surfaces (surfaces with internal threads) of the outer terminal portions 30B and 40B can be formed into exposed surfaces.

[0053] Left and right sides of the front end of the external terminal portion 30B and left and right sides of the rear end of the external terminal portion 40B are respectively provided with outwardly open cutouts 38 and 44 in the left and right directions. These cutouts 38 and 44 function to position the first terminal 30 and the second terminal 40. In addition, sealing resin 60 enters these cutouts 38 and 44. As a result, the strength of the load applied when the first terminal 30 and the second terminal 40 are threaded is improved. Alternatively, the structure can be configured to replace the cutouts 38 and 44 by forming through holes.

[0054] like Figure 6 , Figure 10 as well as Figure 11 As shown, a grounding extension 39 extends to the left from the rear end of the inner terminal portion 30A of the first terminal 30. The front end of the grounding extension 39 is positioned above the third conductor portion 18. A bent portion 39A is formed on the front end of the grounding extension 39, curving towards the third conductor portion 18 (i.e., the insulating substrate 12 side; the lower side). This bent portion 39A is centered on the curvature center line CC in the front-rear direction (refer to...). Figure 12 It bends around the center of curvature.

[0055] A front-end connecting portion 39B, which connects to the third conductor portion 18, is provided at the front end (lower end) of the curved portion 39A. Viewed from the left and right direction, the front-end connecting portion 39B is formed as a downwardly convex arc shape, and its lower surface is curved. The curved surface of this front-end connecting portion 39B makes line contact with the third conductor portion 18, which is the connection target. Figure 11 As shown, the front-end connection portion 39B is joined to the third conductor portion 18 by solder BM, which is a conductive bonding material. In the first terminal 30 of the above structure, the curved shape of the front-end connection portion 39B is formed by punching through the flat plate material constituting the first terminal 30. Furthermore, the bent portion 39A is formed by a subsequent bending process.

[0056] In this front-end connection portion 39B, the portion that contacts the third conductor portion 18 (refer to...) Figure 12 The double-dotted line (LC) extends in a direction orthogonal to the center line of curvature CC. Furthermore, this embodiment is not limited to a structure where the front-end connecting portion 39B and the connecting target portion are in line contact; it can also be configured as a point contact or surface contact structure. Additionally, this embodiment is not limited to a structure where the front-end connecting portion 39B and the third conductor portion 18 (connecting target portion) are in direct contact; it can also be configured such that a conductive bonding material is sandwiched between the front-end connecting portion 39B and the connecting target portion, and the front-end connecting portion 39B and the connecting target portion are connected via the conductive bonding material. Furthermore, the connecting target portion is not limited to a conductor portion on the insulating substrate 12; it can also be an electrode of a semiconductor element, etc.

[0057] like Figure 4 As shown, a connection member 50 is disposed on the insulating substrate 12. The connection member 50 electrically connects the gate electrode 24 of the semiconductor element 20 to the second conductor portion 16. Figure 13 and Figure 14 As shown, the connecting member 50 is manufactured by stamping a conductive flat plate material (in this case, a copper plate) and is formed into a strip shape. The flat plate material constituting the connecting member 50 is set to be thinner than the flat plate material constituting the first terminal 30 and the second terminal 40.

[0058] The connecting member 50 has a horizontal, strip-shaped portion 50A extending parallel to the insulating substrate 12 at its central longitudinal direction. A conductor connection portion 50B extends obliquely from one end of the horizontal portion 50A toward the lower side (insulating substrate 12 side) of the horizontal portion 50A along its longitudinal direction. The front end of the conductor connection portion 50B is bent to be approximately parallel to the insulating substrate 12 and is disposed on the second conductor portion 16. The front end of the conductor connection portion 50B is connected by solder BM (refer to...) as a conductive bonding material. Figure 14 The gate connection portion 50C is joined to the second conductor portion 16. A gate connection portion 50C extends obliquely from one end of the horizontal portion 50A along its length towards the lower side (insulating substrate 12 side) on the other side of the horizontal portion 50A. The gate connection portion 50C is formed to be narrower than the widths of the horizontal portion 50A and the conductor connection portion 50B. The front end of the gate connection portion 50C is curved upwards into an arc shape and disposed on the gate electrode 24. The front end of the gate connection portion 50C is joined by solder BM (refer to...) as a conductive bonding material. Figure 14 It is connected to the gate electrode 24.

[0059] like Figures 2-4 As shown, flat support members 52 are respectively disposed above the left side of the front end side and above the right side of the rear end side of the insulating substrate 12. One support member 52 is disposed above the second conductor portion 16 at a predetermined distance, and the other support member 52 is disposed above the third conductor portion 18 at a predetermined distance. These support members 52 are manufactured by stamping from a conductive flat material (in this case, copper plate) and are formed into a generally rectangular flat plate shape. These support members 52 are arranged parallel to the insulating substrate 12. The flat material constituting these support members 52 is set to be thinner than the flat material constituting the first terminal 30 and the second terminal 40, and is set to be thicker than the flat material constituting the connecting member 50.

[0060] like Figure 15 As shown, a polygonal (approximately quadrilateral) through hole 54 is formed in the center of the support member 52. The inner circumferential surfaces of the four corners of the through hole 54 are curved, appearing arc-shaped when viewed from the through-hole direction (i.e., the vertical direction). A pin terminal 56 is inserted (pressed in) and supported in this through hole 54. Figure 16As shown, the pin terminal 56 is formed into a long rod shape (or cylindrical shape) using a conductive material (in this case, a metal). Furthermore, the shape of the through hole 54 in the support member 52 is not limited to the above shape and can be appropriately modified. That is, the through hole 54 can be a polygonal shape such as a triangle, pentagon, or hexagon. In this embodiment, by forming the inner peripheral surfaces of the four corners of the through hole 54 into curved surfaces, the stress concentration at the four corners caused by the pressing of the pin terminal 56 is mitigated. However, it is also possible to configure the structure so that the inner peripheral surfaces of the corners of the through hole 54 are not curved.

[0061] A brim-shaped flange 56A is formed on one end side (lower end side) along the length direction of the pin terminal 56. One end of the pin terminal 56 along the length direction is inserted (pressed in) into the through hole 54 of the support member 52 from the upper side (i.e., the side opposite to the second conductor portion 16 or the third conductor portion 18 of the insulating substrate 12). Thus, four portions of the outer peripheral surface of the lower end side of the pin terminal 56 are in contact with the inner peripheral surface of the through hole 54. The lower surface of the flange 56A of the pin terminal 56 becomes a facing surface 57 that faces the edge of the through hole 54 from the upper side, and is joined to the upper surface of the support member 52 via solder BM, which is a conductive bonding material. Besides the case where the flange 56A contacts the edge of the through hole 54, the aforementioned "facing" also includes the case where the flange 56A is connected to the edge of the through hole 54 via solder BM.

[0062] like Figure 15 As shown, solder BM is filled between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54. Figure 4 (Illustrations omitted). To further explain the filling process, in this embodiment, after the pin terminal 56 is pressed into the through hole 54 of the support member 52, the support member 52 and the pin terminal 56 are heated, causing the solder BM layer disposed on the upper surface of the support member 52 to melt. The molten solder BM wets and expands between the upper surface of the support member 52 and the opposing surface 57 of the flange portion 56A, and flows through the flange portion 56A into the space between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54, where it then solidifies. As a result, the contact area between the pin terminal 56 and the support member 52 via the solder BM is increased.

[0063] like Figure 17As shown, the lower end of pin terminal 56 abuts against the upper surface of the second conductor portion 16 or the third conductor portion 18 of the insulating substrate 12 and is bonded to the second conductor portion 16 or the third conductor portion 18 via solder BM. Thus, pin terminal 56 is electrically connected to the second conductor portion 16 or the third conductor portion 18. Pin terminal 56 connected to the second conductor portion 16 is used to input control signals to the gate electrode 24. Pin terminal 56 connected to the third conductor portion 18 is used for grounding and is configured such that the source electrode 22 is grounded via the first terminal 30, the third conductor portion 18, and pin terminal 56.

[0064] In the semiconductor device 10 with the above-described structure, such as Figure 1 As shown, the lower end (base end) of the insulating substrate 12, the first conductor portion 14, the second conductor portion 16, the third conductor portion 18, the semiconductor element 20, the connecting member 50, the support member 52, and the pin terminal 56 is sealed with sealing resin 60. The outer terminal portion 30B of the first terminal 30 and the second terminal 40 is provided on the upper surface of the sealing resin 60 and is exposed outside the sealing resin 60. The upper end (the other end in the length direction; the front end) of the pin terminal 56 protrudes outward from the sealing resin 60.

[0065] like Figures 2-5 As shown, in addition to the first to third conductor portions 14, 16, and 18, two suspension member joint portions 19 formed by conductor patterns (copper patterns) are provided on the insulating substrate 12. The two suspension member joint portions 19 are formed on the right side of the front end and the left side of the rear end of the insulating substrate 12. Suspension pins 62, which serve as suspension members, are respectively bonded to these suspension member joint portions 19 using a conductive bonding material. The suspension pins 62 are made of a plate of the same thickness as the support member 52 and are elongated strips with their length in the left-right direction.

[0066] The suspension pin 62 and the support component 52 are made of Figure 18 and Figure 19 It is formed by a portion of the lead frame LF shown. That is, during the manufacture of semiconductor device 10, as... Figure 18 As shown, the insulating substrate 12, which is fitted with a first terminal 30, a second terminal 40, a connecting member 50, and a pin terminal 56, is supported on the lead frame LF via a support member 52. Figure 18 In the indicated state, the four support components 52 and the two suspension pins 62 are connected to the lead frame LF. It is then transported to the next process in this state. In the next process, as... Figure 19 As shown, the two support components 52 are cut from the lead frame LF, but the two suspension pins 62 are set to remain connected to the lead frame LF. In this state, it is transported to the next process. In the next process, as... Figure 20As shown, the sealing resin 60 is molded. After the sealing resin 60 is molded, the two suspension pins 62 are cut from the lead frame LF, completing the process. Figure 1 The semiconductor device 10 shown is manufactured in this manner. In the semiconductor device 10 manufactured in this way, the end face of the suspension pin 62 is exposed outside the sealing resin 60 (see reference). Figure 1 ).

[0067] Next, the operation and effects of this embodiment will be explained. In the semiconductor device 10 with the above structure, a first conductor portion 14 and a second conductor portion 16 are formed on an insulating substrate 12, and a semiconductor element 20 is disposed on the first conductor portion 14. The drain electrode of the semiconductor element 20 is connected to the first conductor portion 14. A plate-shaped first terminal 30 is connected to the source electrode 22 of the semiconductor element 20, and a plate-shaped second terminal 40 is connected to the first conductor portion 14. The gate electrode 24 of the semiconductor element 20 and the second conductor portion 16 are electrically connected by a connecting member 50. A plate-shaped support member 52 is disposed at a predetermined interval relative to the second conductor portion 16, and a rod-shaped pin terminal 56 connected to the second conductor portion 16 is supported in a state where it is inserted into the support member 52. The insulating substrate 12, the first conductor portion 14, the second conductor portion 16, the semiconductor element 20, the connecting member 50, and the support member 52 are sealed with a sealing resin 60.

[0068] The first terminal 30, the second terminal 40, and the support member 52 supporting the pin terminal 56 are configured as different components. Therefore, the first terminal 30, the second terminal 40, and the support member 52 can be manufactured using flat materials with different plate thicknesses. Thus, even when the plate thickness of the first terminal 30 and the second terminal 40 is increased in response to a large current, the plate thickness of the support member 52 can be reduced. Therefore, the overall structure of the semiconductor device 10 can be kept compact, and miniaturization of the semiconductor device 10 can be achieved. Furthermore, it is not necessary to increase the plate thickness of the lead frame LF, which is the material of the support member 52, thus avoiding difficulties in the fine machining of the lead frame LF that would result from increased plate thickness. As a result, for example, the through-hole 54 of the support member 52 can be formed with high precision, and therefore, the pin terminal 56 can be pressed into the through-hole 54 with high precision for support.

[0069] The first terminal 30 and the second terminal 40 each have internal terminal portions 30A and 40A and external terminal portions 30B and 40B. The internal terminal portions are disposed inside the sealing resin 60, and the external terminal portions are disposed exposed outside the sealing resin 60. The external terminal portions 30B and 40B of the first terminal 30 and the second terminal 40 are each provided with internal threads 48, so the first terminal 30 and the second terminal 40 can be connected by threaded fastening. In addition, it is not necessary to embed the threaded fastening nut into the sealing resin 60, so the semiconductor device 10 can be thinned. As a result, for example, the heat dissipation performance of the semiconductor device 10 can be improved. In addition, for example, compared with the structure of extending the first terminal and the second terminal and using the extension to hold the threaded fastening nut in the sealing resin 60, the wiring resistance is reduced, and low inductance can be achieved.

[0070] The aforementioned external terminal portions 30B and 40B each have insertion holes 36 and 42 that extend through the plate thickness direction. An internal thread portion 48 is formed on the internal thread component 46, which is inserted into and fixed to the insertion holes 36 and 42 of the external terminal portions 30B and 40B. Thus, for example, compared to a structure in which the external terminal portions 30B and 40B are flanged to form a cylindrical upright portion, and the internal thread portion 48 is formed on the inner circumference of the upright portion, the strength of the internal thread portion 48 can be improved.

[0071] One end of the aforementioned internally threaded component 46 is inserted into the insertion holes 36 and 42, while the other end is sealed within the sealing resin 60. Thus, the internally threaded component 46 is fixed relative to the sealing resin 60, thereby increasing the strength of the load applied when the first terminal 30 and the second terminal 40 are threaded together.

[0072] Furthermore, left and right open cutouts 38 and 44 in the left and right directions are formed on the left and right sides of the front end of the external terminal portion 30B and on the left and right sides of the rear end of the external terminal portion 40B, respectively. Sealing resin 60 enters these cutouts 38 and 44. As a result, the strength of the load applied when threading the first terminal 30 and the second terminal 40 is further improved.

[0073] Furthermore, the first terminal 30 has a bent portion 39A and a front-end connection portion 39B. The bent portion bends towards the third conductor portion 18, and the front-end connection portion is located at the front end of the bent portion 39A. The front-end connection portion 39B is connected to the third conductor portion 18 via solder BM. The shape of the front-end connection portion 39B is formed when the flat plate material constituting the first terminal 30 is punched through during stamping. Therefore, regardless of the thickness of the flat plate material or the bending radius of the bent portion 39A, the shape of the front-end connection portion 39B can be stabilized. As a result, the strength of the bond between the front-end connection portion 39B and the third conductor portion 18 via solder BM is stable.

[0074] The aforementioned front-end connecting portion 39B is formed in a curved shape and makes line contact with the third conductor portion 18. This facilitates the stable formation of a fillet for the solder BM. Furthermore, at the outermost periphery of the front-end connecting portion 39B, where stress tends to concentrate due to thermal shrinkage of the solder BM, the solder thickness is easily ensured, thus mitigating stress. Additionally, by joining the front-end connecting portion 39B, located at the front end of the bent portion 39A, to the third conductor portion 18 as described above, the area required for joining remains constant regardless of the thickness of the flat plate material or the bending radius of the bent portion 39A. This prevents the area occupied by the first terminal 30 from increasing, thus avoiding an increase in product size.

[0075] Furthermore, in the grounding extension 39 of the first terminal 30, the portion closer to the front end of the bend 39A can be bent parallel to the insulating substrate 12, thereby connecting the bend to the third conductor portion 18 (connection target portion). However, in such a structure, if the thickness of the first terminal 30 (terminal component) increases, the bending radius of the bend becomes larger. As a result, the following problems arise: it is difficult to form a constant bending radius of the bend, making it difficult to stably form solder joints. In addition, the area required to join the bend to the connection target portion as described above increases, leading to a problem of increasing the overall size of the semiconductor device 10. In this respect, according to this embodiment, the problems described above can be eliminated.

[0076] Additionally, in the aforementioned front-end connection portion 39B, the portion LC that contacts the third conductor portion 18 (refer to...) Figure 12 The bending portion 39A extends in a direction orthogonal to the bending center (i.e., the curvature center line CC) of the bending portion 39A. Because of this configuration, after forming the front-end connecting portion 39B by stamping the flat material constituting the first terminal 30, the bending portion 39A can be bent by bending, which allows for the formation of both the front-end connecting portion 39B and the bending portion 39A in less time. This, for example, reduces the manufacturing cost of the first terminal 30.

[0077] Furthermore, according to this embodiment, a semiconductor element 20 is disposed on the first conductor portion 14 of the insulating substrate 12, and a flat support member 52 is disposed at a predetermined interval relative to the second conductor portion 16 and the third conductor portion 18 of the insulating substrate 12. A cylindrical pin terminal 56 is inserted into the support member 52, and the pin terminal 56 is connected to the second conductor portion 16 and the third conductor portion 18. The support member 52 has a through hole 54 extending in the thickness direction, in which the pin terminal 56 is inserted. The through hole 54 is polygonal (quadrilateral in this case), therefore, compared to the case where the through hole 54 is a circular hole, the contact area between the pin terminal 56 and the through hole 54 is smaller. Therefore, compared to the case where the through hole 54 is a circular hole, the through hole 54 can be supported by inserting (pressing in) the pin terminal 56 with stable accuracy.

[0078] Furthermore, the solder BM that bonds the pin terminal 56 to the support member 52 is filled between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54. This increases the contact area between the pin terminal 56 and the support member 52 via the solder BM, thus reducing the resistance between the pin terminal 56 and the support member 52. Further, the pin terminal 56 has a facing surface 57 (see reference 57) opposite to the edge of the through hole 54, located on the side opposite to the second conductor portion 16 or the third conductor portion 18. Figure 16 The opposing surface 57 is bonded to the edge of the through hole 54 by solder BM. This increases the contact area between the pin terminal 56 and the support member 52 via the solder BM, thus further reducing the resistance between the pin terminal 56 and the support member 52. Furthermore, the inner circumferential surfaces of the four corners of the through hole 54 are formed into curved surfaces. This alleviates the stress concentration at the four corners caused by the pressing of the pin terminal 56 into the through hole 54.

[0079] <Various variations>

[0080] Next, refer to Figures 21-30 Various modifications of the above-described embodiments will be described. Figure 21 A first modified example of the second terminal 40 is shown in the perspective view. This first modified example of the second terminal 40 corresponds to a "terminal component". In this first modified example of the second terminal 40, the internal terminal portion 40A has a bent portion 40A1 and a front end connecting portion 40A2. The bent portion bends towards the first conductor portion 14 (connection target portion) of the insulating substrate 12, and the front end connecting portion is provided at the front end (lower end) of the bent portion 40A1. The lower end of the front end connecting portion 40A2 is approximately V-shaped. The lower end of the front end connecting portion 40A2 is in line contact with the first conductor portion 14. When the front end connecting portion 40A2 is joined to the first conductor portion 14 by solder, a solder joint is easily and stably formed.

[0081] exist Figure 22 A second variation of the second terminal 40 is shown in a perspective view. This second variation of the second terminal 40 corresponds to a "terminal component," and like the first variation of the second terminal 40, it has a bent portion 40A1 and a front-end connecting portion 40A2. The lower end of the front-end connecting portion 40A2 is wavy and makes line contact with the first conductor portion 14 of the insulating substrate 12 at multiple locations. When the front-end connecting portion 40A2 is joined to the first conductor portion 14 by solder, a solder joint is easily and stably formed.

[0082] exist Figure 23 A first modified example of the connecting member 50 is shown in the perspective view. This first modified example of the connecting member 50 corresponds to a "terminal member". In this first modified example of the connecting member 50, the gate connection portion 50C has a bent portion 50C1 and a front end connection portion 50C2. The bent portion bends towards the gate electrode 24 (the connection target portion) of the semiconductor element 20, and the front end connection portion is located at the front end (lower end) of the bent portion 50C1. The lower end of the front end connection portion 50C2 is approximately V-shaped and makes line contact with the gate electrode 24. When the front end connection portion 50C2 is joined to the gate electrode 24 by solder, a solder joint is easily and stably formed.

[0083] exist Figure 24 A second variation of the connecting member 50 is shown in a perspective view. This second variation of the connecting member 50 corresponds to a "terminal member," and like the first variation, it has a bent portion 50C1 and a front-end connecting portion 50C2. In this second variation, the conductor connecting portion 50B has a bent portion 50B1 and a front-end connecting portion 50B2. The bent portion bends towards the second conductor portion 16 of the insulating substrate 12, and the front-end connecting portion is located at the front end (lower end) of the bent portion 50B1. The lower end of the front-end connecting portion 50B2 is wavy and makes line contact with the second conductor portion 16 at multiple locations. When the front-end connecting portion 50B2 is joined to the second conductor portion 16 using solder, a stable solder joint is easily formed.

[0084] exist Figure 25 The first modified example of pin terminal 56 is shown in the perspective view. The first modified example of pin terminal 56 does not have the flange portion 56A. (See diagram below.) Figure 26As shown, in the first modified embodiment where the pin terminal 56 is inserted, the support member 52 has a chamfered portion 55 formed on the upper surface side of the edge of the through hole 54. After the pin terminal 56 is pressed into the through hole 54 of the support member 52, the support member 52 and the pin terminal 56 are heated, and the solder layer provided on the upper surface of the support member 52 is melted. The molten solder is guided to the chamfered portion 55 to flow between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54, and then solidifies. As a result, the contact area between the pin terminal 56 and the support member 52 via the solder BM is increased.

[0085] exist Figure 27 A second modified example of the pin terminal 56 is shown in a perspective view. Like the first modified example, the second modified example of the pin terminal 56 lacks a flange 56A and has multiple (four in this case) slots 56B on the outer periphery of its lower end. The four slots 56B extend in the axial direction (vertical direction) of the pin terminal 56. Figure 28 As shown, the pin terminal 56 is pressed into the through hole 52 so that the four slots 56B face the four corners of the through hole 54 of the support member 52. After the pin terminal 56 is pressed into the through hole 54 of the support member 52, the support member 52 and the pin terminal 56 are heated, and the solder layer provided on the upper surface of the support member 52 is melted. The molten solder is guided into the multiple slots 56B to flow between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54, and then solidifies. In addition, the solder on the conductor portion of the insulating substrate 12 is drawn up in the multiple slots 56B due to capillary action, thereby flowing between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54, and then solidifies. As a result, the contact area between the pin terminal 56 and the support member 52 via the solder BM is increased.

[0086] exist Figure 29 The third modified example of the pin terminal 56 is shown in the perspective view. In this third modified example of the pin terminal 56, the portion other than the lower end is designated as a large-diameter portion 56L, and the lower end is designated as a small-diameter portion 56S. Regarding the small-diameter portion 56S, it is formed with a diameter smaller than that of the large-diameter portion 56L and is pressed into the through hole 54 of the support member 52 (see reference). Figure 30 A downward-facing opposing surface 57 is formed between the small-diameter portion 56S and the large-diameter portion 56L, and this opposing surface 57 faces the edge of the through hole 54 from the upper side. When the pin terminal 56 and the support member 52 are heated to melt the solder BM layer provided on the upper surface of the support member 52, the molten solder BM weaves and expands between the upper surface of the support member 52 and the opposing surface 57, and flows through the opposing surface 57 into the space between the outer periphery of the pin terminal 56 and the inner periphery of the through hole 54, and then solidifies. As a result, the contact area between the pin terminal 56 and the support member 52 via the solder BM is increased.

[0087] Furthermore, while the above embodiment describes the case where the semiconductor element 20 is a power MOSFET, it is not limited to this. The semiconductor element can also be other elements such as an IGBT (Insulated Gate Bipolar Transistor), a thyristor, or a diode. Additionally, the material used for the semiconductor element can be silicon, SiC (silicon carbide), GaN (gallium nitride), or other raw materials.

[0088] Furthermore, the semiconductor element 20 in the above embodiment is a so-called vertical semiconductor element having a source electrode 22 on one side and a drain electrode on the other side, but it is not limited to this. The semiconductor element may also be a so-called lateral semiconductor element having a source electrode and a drain electrode on one side.

Claims

1. A semiconductor device comprising: Insulating substrate; A first conductor portion and a second conductor portion are formed on the insulating substrate; A semiconductor element disposed on the first conductor portion; A flat first terminal is connected to the first electrode of the semiconductor element; A flat second terminal is connected to the first conductor portion; A connecting component that electrically connects the control electrode of the semiconductor element to the second conductor portion; A flat support member is provided, which is arranged at a predetermined interval relative to the second conductor portion; A rod-shaped pin terminal is supported in a state of being inserted into the support member and connected to the second conductor portion; as well as A sealing resin is used to seal the insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connecting member, and the supporting member; wherein... The first terminal and the second terminal are formed from different components than the support member. The first terminal and the second terminal are formed from components that are thicker than the supporting component.

2. The semiconductor device according to claim 1, wherein, The semiconductor device includes a suspension component, one end of which is fixed to the insulating substrate and the other end of which protrudes from the sealing resin.

3. The semiconductor device according to claim 2, wherein, The support component and the suspension component are formed from components of the same plate thickness.

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