Method, device and equipment for electromagnetic simulation of diode and readable storage medium

Abstract

This application discloses an electromagnetic simulation method, apparatus, device, and readable storage medium for diodes. The method includes: constructing an electromagnetic simulation calculation region, which contains a simulated diode and one or more simulated objects; the electromagnetic simulation calculation region is the area of ​​interest when performing electromagnetic simulation on the simulated diode and each simulated object; based on the simulated diode as a lumped parameter element, performing finite-difference time-domain (FDTD) meshing on the electromagnetic simulation calculation region to obtain a set of orthogonal meshes; using the FDTD algorithm, iterating continuously on the electric field vector and magnetic field vector of each mesh and the simulated diode until a preset condition is reached, wherein the electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each mesh and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each mesh and the simulated diode. Therefore, this application can systematically provide a method for electromagnetic simulation of diodes.

Description

Technical Field

[0001] This application relates to the field of diode simulation technology, and more specifically, to an electromagnetic simulation method, apparatus, device, and readable storage medium for diodes. Background Technology

[0002] Since diodes are key components in power electronic systems, electromagnetic simulation of diodes is indispensable when performing electromagnetic simulation of power electronic systems.

[0003] However, due to the interdisciplinary nature of the electromagnetic compatibility characteristics of diodes and the extremely complex theoretical knowledge involved, it is difficult to conduct a systematic study on their functional characteristics and electromagnetic interference characteristics in a short period of time. Based on this, a systematic electromagnetic simulation method for diodes has not yet been formed in the existing technology. Summary of the Invention

[0004] In view of this, this application provides an electromagnetic simulation method, apparatus, device, and readable storage medium for providing a systematic method for electromagnetic simulation of diodes.

[0005] To achieve the above objectives, the following solution is proposed:

[0006] An electromagnetic simulation method for a diode, comprising:

[0007] An electromagnetic simulation calculation region is constructed, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0008] Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is divided into a set of orthogonal grids by the finite-difference time-domain method (FDTD).

[0009] The FDTD algorithm is used to iterate the electric field vector and magnetic field vector of each orthogonal grid and the simulated diode until a preset condition is reached. The electric field of the electromagnetic simulation calculation region is composed of the electric field vector of each orthogonal grid and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vector of each orthogonal grid and the simulated diode.

[0010] Optionally, based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is meshed using the finite-difference time-domain (FDTD) method to obtain a set of orthogonal meshes, including:

[0011] Using the non-uniform grid discretization technique of the FDTD algorithm, the electromagnetic simulation calculation region is meshed based on the simulated diode as a lumped parameter element to obtain a set of orthogonal grids.

[0012] Optionally, the simulated diode has a unique corresponding electric field vector, and each of the orthogonal grids corresponds to a three-dimensional orthogonal electric field vector, wherein one of the electric field vectors corresponding to one of the orthogonal grids is the electric field vector uniquely corresponding to the simulated diode.

[0013] The simulated diode has multiple corresponding magnetic field vectors. Each of the orthogonal grids corresponds to a three-dimensional orthogonal magnetic field vector. The multiple magnetic field vectors corresponding to the simulated diode are the magnetic field vectors corresponding to the orthogonal grids associated with the simulated diode.

[0014] The FDTD algorithm is used to iterate the electric and magnetic field vectors of each of the orthogonal grids and the simulated diode, including:

[0015] The time step of the electromagnetic simulation calculation region is determined based on the size of each of the orthogonal grids.

[0016] At each of the aforementioned time steps, the FDTD algorithm is used to update the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid.

[0017] Optionally, at each of the aforementioned time steps, the FDTD algorithm is used to update the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid, including:

[0018] When updating the electric field vector and magnetic field vector at the current time step, the FDTD algorithm is used to update the electric field vectors of all orthogonal grids except for the electric field vector corresponding to the simulated diode.

[0019] The electric field vector of the simulated diode is updated using the physical characteristic parameters of the simulated diode and the FDTD algorithm.

[0020] The magnetic field vectors corresponding to each orthogonal grid are updated using the updated electric field vectors and the FDTD algorithm.

[0021] Optionally, after updating the electric field vectors of all orthogonal grids in the electric field except for the electric field vector corresponding to the simulated diode using the FDTD algorithm, the method further includes:

[0022] Determine multiple electric field vectors adjacent to the simulated diode;

[0023] Replace each electric field vector adjacent to the simulated diode with the electric field vector obtained after high-frequency filtering, and return to execute the step of updating the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector corresponding to each orthogonal grid and the FDTD algorithm.

[0024] Optionally, the simulated diode is equivalent to a controlled current source and a junction capacitance connected in parallel;

[0025] The step of updating the electric field vector of the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm includes:

[0026] The voltage of the simulated diode is calculated using the electric field vector corresponding to the diode at the previous time step and the size of the orthogonal grid corresponding to the electric field vector.

[0027] Using the voltage of the simulated diode and the corresponding physical characteristic parameters of the simulated diode, calculate the current value of the controlled current source and the capacitance value of the junction capacitance of the simulated diode at the current time step.

[0028] The electric field vector corresponding to the simulated diode is updated using the current value and the capacitance value, combined with the FDTD algorithm.

[0029] Optionally, updating the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector and the FDTD algorithm includes:

[0030] Determine the equivalent relative permeability of each of the orthogonal grids;

[0031] The magnetic field vector corresponding to each orthogonal grid is updated using the equivalent relative permeability of each orthogonal grid, the updated electric field vector corresponding to each orthogonal grid, and the FDTD algorithm.

[0032] An electromagnetic simulation device for a diode, comprising:

[0033] A construction unit is used to construct an electromagnetic simulation calculation region, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0034] The meshing unit is used to perform finite-difference time-domain (FDTD) meshing on the electromagnetic simulation calculation region based on the simulated diode as a lumped parameter element, to obtain a set of orthogonal meshes;

[0035] An iterative unit is used to continuously iterate the electric field vector and magnetic field vector of each of the orthogonal grids and the simulated diode using the FDTD algorithm until a preset condition is reached. The electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each of the orthogonal grids and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each of the orthogonal grids and the simulated diode.

[0036] An electromagnetic simulation device for diodes, comprising a memory and a processor;

[0037] The memory is used to store programs;

[0038] The processor is used to execute the program to implement the various steps of the above-described electromagnetic simulation method for diodes.

[0039] A readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the electromagnetic simulation method for diodes as described above.

[0040] As can be seen from the above technical solution, the electromagnetic simulation method for diodes provided in this application constructs an electromagnetic simulation calculation region. This region includes a simulated diode and one or more simulated objects electromagnetically coupled to the simulated diode. The electromagnetic simulation calculation region is the area of ​​interest when performing electromagnetic simulation on the simulated diode and each of the simulated objects. Based on this, the calculation region requiring focus during the electromagnetic simulation of the diode can be determined. Furthermore, by using the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region can be meshed using the Finite-Difference Time-Domain (FDTD) method to obtain a set of orthogonal meshes. Based on this, the diode can be abstracted into a symbol that does not affect the calculation results. Therefore, the simulated diode was not segmented during mesh generation to better focus on the overall characteristics of the diode during electromagnetic simulation, reducing errors and computational complexity. The FDTD algorithm can be used to iterate the electric and magnetic field vectors of each orthogonal mesh and the simulated diode until a preset condition is met. Since the electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each orthogonal mesh and the simulated diode, and the magnetic field is composed of the magnetic field vectors of each orthogonal mesh and the simulated diode, the update process of the electric and magnetic fields of the entire electromagnetic simulation calculation region can be completed through iterative processes of the electric and magnetic field vectors of each orthogonal mesh and the simulated diode. This application can perform electromagnetic simulation of diodes and systematically provides a method for electromagnetic simulation of diodes.

[0041] Furthermore, by dividing the iterative process of the electric and magnetic fields in the entire electromagnetic simulation calculation region into a set of orthogonal grids and the iterative process of the electric and magnetic field vectors of the simulated diode, the accuracy of the iterative update is further improved. Moreover, by treating the diode as a lumped parameter element, the overall characteristics of the diode are not changed during the iteration process, reducing the generation of errors. Based on this, the electromagnetic simulation method for diodes provided in this application can further ensure the accuracy and reliability of the electromagnetic simulation process of diodes. Attached Figure Description

[0042] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0043] Figure 1 This is a flowchart of an electromagnetic simulation method for a diode disclosed in an embodiment of this application;

[0044] Figure 2 This is a schematic diagram illustrating the electric and magnetic field vectors of an orthogonal grid, as exemplified in an embodiment of this application.

[0045] Figure 3 This is a schematic diagram of the equivalent circuit of a diode as exemplified by an embodiment of this application;

[0046] Figure 4 This is a schematic diagram illustrating the relationship between diode voltage and reference direction, as exemplified by an embodiment of this application.

[0047] Figure 5 This is a structural block diagram of an electromagnetic simulation device for a diode disclosed in an embodiment of this application;

[0048] Figure 6 This is a hardware structure block diagram of an electromagnetic simulation device for a diode disclosed in an embodiment of this application. Detailed Implementation

[0049] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0050] The electromagnetic simulation method for diodes provided in this application is based on the Finite-Difference Time Domain (FDTD) method to perform electromagnetic simulations on diodes. This diode electromagnetic simulation method can be applied to various types of FDTD modeling software to perform electromagnetic simulations on diodes in various power electronic systems.

[0051] Next, combine Figure 1 The electromagnetic simulation method for the diode described in this application is described in detail, including the following steps:

[0052] Step S1: Construct the electromagnetic simulation calculation region.

[0053] Specifically, the electromagnetic simulation calculation area includes a simulated diode and one or more simulated objects that are electromagnetically coupled to the simulated diode. The electromagnetic simulation calculation area is the region that needs to be considered when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0054] The simulated diode can be a power diode. The simulated object can be a conductor or dielectric that may be electromagnetically coupled to the simulated diode, such as a wire, power supply, resistor, or circuit board substrate.

[0055] The electromagnetic simulation calculation area is a three-dimensional region in which electric and magnetic fields may be coupled during the electromagnetic simulation of the simulated diode and various simulated objects.

[0056] Step S2: Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is divided into a finite-difference time-domain (FDTD) mesh to obtain a set of orthogonal meshes.

[0057] Specifically, the simulated diode is abstracted into a symbol that does not affect the calculation results, and the simulated diode is not partitioned, so that the simulated diode coincides with the orthogonal mesh edge.

[0058] There may be multiple simulated diodes, and these multiple simulated diodes will coincide with multiple different orthogonal grid edges. For example, if there are two simulated diodes, one simulated diode will coincide with one orthogonal grid edge, and the other simulated diode will coincide with another orthogonal grid edge. Different simulated diodes may coincide with two orthogonal grid edges of the same orthogonal grid.

[0059] During the meshing process, considering the complex electromagnetic distribution and significant nonlinear effects within the simulated object, orthogonal meshes are used to discretize it. When the orthogonal mesh size is sufficiently fine, the electromagnetic field in each mesh can be approximated as linearly distributed, facilitating the analysis of the electromagnetic field within the simulated object. However, excessively small orthogonal mesh sizes can also cause problems (e.g., when discretizing simulated objects with fine structures), as overly dense meshes significantly reduce the time step, increase storage space, and raise the computational load, leading to unnecessary burdens. Therefore, the size of the orthogonal mesh can be determined based on the dimensions and fine structure of each simulated object, the simulation accuracy, and the tolerable computational difficulty.

[0060] In addition, it is important to ensure that the Cauchy stability condition (Courant-Friedrich-Levy Limit) is met when performing mesh generation to prevent problems such as data divergence, oscillation, and non-convergence that may occur in time-domain computation.

[0061] When performing mesh generation, either non-uniform mesh discretization or uniform mesh discretization can be used.

[0062] It should be noted that a set of orthogonal meshes contains multiple orthogonal meshes, and the individual orthogonal meshes in the set of orthogonal meshes obtained by subdivision can be combined to form a complete electromagnetic simulation calculation domain.

[0063] Step S3: Using the FDTD algorithm, continuously iterate the electric field vector and magnetic field vector of each of the orthogonal grids and the simulated diode until the preset conditions are met.

[0064] Specifically, the electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each of the orthogonal grids and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each of the orthogonal grids and the simulated diode.

[0065] In the process of iterating the electric field vector and magnetic field vector of each orthogonal grid and the simulated diode using the FDTD algorithm, the electric field vector can be updated and iterated using the classical electric field update equation of the FDTD algorithm, and the magnetic field vector can be updated and iterated using the classical magnetic field update equation of the FDTD algorithm.

[0066] The classical electric field update equation of the FDTD algorithm requires calculation using four magnetic field vectors surrounding the electric field vector, and the classical magnetic field update equation of the FDTD algorithm requires calculation using four electric field vectors surrounding the magnetic field vector. Based on this, the electromagnetic field coupling problem is taken into account during the electromagnetic simulation process, that is, the electromagnetic coupling relationship between the simulated diode and other simulated objects is fully considered.

[0067] The FDTD algorithm is used to update the electric field vector and magnetic field vector of each orthogonal grid and simulated diode at each time step until the number of updated time steps reaches a preset threshold or the electromagnetic vector reaches a preset convergence condition.

[0068] In general, the threshold is tens of thousands of times.

[0069] When the changes in each electromagnetic vector are small or form a stable periodic change, the electromagnetic vector can be considered to have reached the preset convergence condition.

[0070] As can be seen from the above technical solutions, the electromagnetic simulation method for diodes provided in this application provides a systematic method for constructing electromagnetic simulations of diodes.

[0071] Because this application combines the FDTD algorithm and orthogonal mesh generation in the process of electromagnetic simulation of diodes, the orthogonal mesh generation divides the entire electromagnetic simulation calculation area containing the simulated diode and the simulated object into multiple three-dimensional orthogonal meshes. By calculating the electric field vector and magnetic field vector corresponding to the orthogonal mesh, the electric field and magnetic field of the entire electromagnetic simulation calculation area can be calculated. By breaking down the whole into smaller parts, the application can better focus on each part of the entire electromagnetic simulation calculation area, thereby improving the accuracy of the electromagnetic simulation of this application.

[0072] Furthermore, in calculating the electric field vector of the simulated diode, this application considers the four magnetic field vectors surrounding the electric field vector of the simulated diode, and in calculating the magnetic field vector of the simulated diode, it considers the four electric field vectors surrounding the magnetic field vector of the simulated diode. Since this application treats the simulated diode as a lumped parameter element, the simulated diode is not orthogonally meshed. The four magnetic field vectors surrounding the electric field vector of the simulated diode are the magnetic field vectors corresponding to the simulated object, and the four electric field vectors surrounding the magnetic field vector of the simulated diode are the electric field vectors corresponding to the simulated object. Based on this, this application considers the electromagnetic coupling problem between the simulated diode and the simulated object in the electromagnetic simulation of the diode, achieving strong field-device coupling and further improving the stability performance of the simulated diode.

[0073] In some embodiments of this application, the process of step S2, which involves performing finite-difference time-domain (FDTD) meshing on the electromagnetic simulation calculation region based on the simulated diode as a lumped parameter element, to obtain a set of orthogonal meshes, is described in detail below:

[0074] S20. Using the non-uniform grid discretization technique of the FDTD algorithm, the electromagnetic simulation calculation region is meshed based on the simulated diode as a lumped parameter element to obtain a set of orthogonal grids.

[0075] Specifically, considering multiple aspects during the meshing process for electromagnetic simulation computation, on the one hand, each orthogonal mesh needs to be sufficiently dense to discretize simulated objects that may contain fine structures, thereby obtaining the required simulation accuracy. On the other hand, overly dense orthogonal meshes can generate unnecessary computational burden and reduce computational efficiency. Therefore, a non-uniform meshing technique can be adopted, i.e., increasing the number and reducing the size of orthogonal meshes in critical regions, and reducing the number of orthogonal meshes in air or large-volume medium regions.

[0076] During the mesh generation process, the resulting orthogonal mesh is a three-dimensional orthogonal mesh. Therefore, the electric field vectors corresponding to the same orthogonal mesh are also orthogonal. Similarly, the magnetic field vectors corresponding to the same orthogonal mesh are also orthogonal. Next, we will combine... Figure 2 This application provides a detailed description of the three-dimensional orthogonal mesh, electric field vector, and magnetic field vector.

[0077] See Figure 2 i, j, and k are the position numbers of the electric or magnetic field vectors, and the electric field vector corresponding to the orthogonal grid is the orthogonal vector E. x E y and E z The magnetic field vector corresponding to the orthogonal grid is the orthogonal vector H. x H y and H z The same electric field vector may correspond to multiple different orthogonal grids. Among the electric field vectors corresponding to two different orthogonal grids, some electric field vectors may be the same. Different orthogonal grids correspond to different magnetic field vectors.

[0078] Since the simulated diode is used as a lumped parameter element for meshing, the simulated diode coincides with a certain orthogonal mesh edge. The electric field vector corresponding to this orthogonal mesh edge is the unique electric field vector corresponding to the simulated diode. At the same time, this electric field vector is also the electric field vector corresponding to this orthogonal mesh.

[0079] The magnetic field vector corresponding to the simulated diode is four magnetic field vectors surrounding the electric field vector of the simulated diode. At the same time, these four magnetic field vectors correspond to the orthogonal grids close to the simulated diode. That is, the magnetic field vectors corresponding to each orthogonal grid include the magnetic field vector corresponding to the simulated diode. There are four magnetic field vectors in the electromagnetic simulation calculation region that correspond to both the simulated diode and an orthogonal grid.

[0080] As can be seen from the above technical solution, compared with the above embodiments, this embodiment provides an optional method for partitioning the electromagnetic simulation calculation region. Using this method, more orthogonal meshes can be partitioned in the critical areas of the magnetic simulation calculation region, while fewer orthogonal meshes can be partitioned in areas of lower importance, reducing computational pressure and further reducing the possibility of errors.

[0081] In some embodiments of this application, step S3, which involves using the FDTD algorithm to iterate the electric and magnetic field vectors of each orthogonal grid and the simulated diode until a preset condition is met, is described in detail below:

[0082] S30. Determine the time step of the electromagnetic simulation calculation region based on the size of each of the orthogonal grids.

[0083] Specifically, the maximum time step is determined by the minimum FDTD discrete orthogonal grid size, and the analytical expression for the time step is shown below:

[0084]

[0085] In this context, the smallest orthogonal grid size in the x-direction is selected as Δx, the smallest orthogonal grid size in the y-direction is selected as Δy, and the smallest orthogonal grid size in the z-direction is selected as Δz, where c is the speed of light in the medium.

[0086] The largest time step is selected as the time step of the electromagnetic simulation calculation region.

[0087] S31. At each of the aforementioned time steps, the FDTD algorithm is used to update the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid.

[0088] Specifically, since the electric field vector corresponding to each orthogonal grid contains the electric field vector corresponding to the simulated diode, and the magnetic field vector corresponding to each orthogonal grid contains the magnetic field vector corresponding to the simulated diode, the FDTD algorithm can be used at each time step to update the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid.

[0089] As can be seen from the above technical solution, this embodiment provides an optional method of using the FDTD algorithm to continuously iterate the electric field vector and magnetic field vector of each of the orthogonal grids and the simulated diode. Through the above method, the electric field vector and magnetic field vector can be updated in each time step, which further improves the accuracy of iterating the electric field vector and magnetic field vector.

[0090] In some embodiments of this application, the process of updating the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid using the FDTD algorithm at each time step is described in detail, and the steps are as follows:

[0091] S310. When updating the electric field vector and magnetic field vector at the current time step, the FDTD algorithm is used to update the electric field vectors of all orthogonal grids in the electric field except for the electric field vector corresponding to the simulated diode.

[0092] Specifically, for the electric field vector corresponding to the simulated diode, its electro-magnetic coupling relationship needs to reflect the nonlinear characteristic curve of the real diode. Therefore, the influence of the physical characteristics of the simulated diode on the electric field vector can be considered separately. Based on this, the electric field vectors other than those corresponding to the simulated diode are updated first.

[0093] When updating the other electric field vectors, we can consider using the vector values ​​of the four magnetic field vectors surrounding the electric field vector at the previous time step to update the electric field vector at the current time step. Therefore, we can consider using the classical electric field update equation in the FDTD algorithm, which includes the electric field update equation corresponding to the x-direction, the electric field update equation in the y-direction, and the electric field update equation in the z-direction.

[0094] The electric field update equation in the x-direction is shown below:

[0095]

[0096] The electric field update equation in the y-direction is shown below:

[0097]

[0098] The electric field update equation in the z-direction is shown below:

[0099]

[0100] n+1 represents the number of time steps corresponding to the current time step, and n represents the number of time steps corresponding to the previous time step. Similarly, σ represents the time step number corresponding to the first half of the current time step, σ represents the equivalent conductivity within the corresponding orthogonal grid, ε represents the dielectric constant within the corresponding orthogonal grid, i, j, and k are the position numbers of the electric field vector or magnetic field vector, Δt is the time step of the electromagnetic simulation calculation region, x, y, and z correspond to the x-direction, y-direction, and z-direction, respectively, Δx is the size of the corresponding orthogonal grid in the x-direction, Δy is the size of the corresponding orthogonal grid in the y-direction, and Δz is the size of the corresponding orthogonal grid in the z-direction.

[0101] E x(i,j,k) Let E be the electric field vector in the x-direction, numbered i in the x-direction, j in the y-direction, and k in the z-direction. y(i,j,k) Let E be the electric field vector in the y-direction, with position number i in the x-direction, position j in the y-direction, and position k in the z-direction. z(i,j,k) Let be the electric field vector in the z direction, with position number i in the x direction, position number j in the y direction, and position number k in the z direction.

[0102] H x(i,j,k) Let H be the magnetic field vector in the x-direction, numbered i in the x-direction, j in the y-direction, and k in the z-direction. y(i,j,k) Let H be the magnetic field vector in the y-direction, numbered i in the x-direction, j in the y-direction, and k in the z-direction. z(i,j,k) Let be the magnetic field vector in the z direction, with position number i in the x direction, position number j in the y direction, and position number k in the z direction.

[0103] S311. Update the electric field vector of the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm.

[0104] Specifically, physical characteristic parameters of a real diode, such as saturation current, emission coefficient, electron charge, Boltzmann constant, absolute temperature, sum of time constants of holes and electrons, zero-bias barrier capacitance, gradient coefficient, impurity distribution index, built-in potential of the power diode, and deep forward bias state coefficient, can be obtained as the physical characteristic parameters of the simulated diode.

[0105] The electric field vector of the simulated diode is updated by combining the obtained physical characteristic parameters and the FDTD algorithm.

[0106] S312. Update the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector and the FDTD algorithm.

[0107] Specifically, in the process of updating the magnetic field vector of each orthogonal grid using the FDTD algorithm, it is necessary to use the four electric field vectors surrounding the magnetic field vector. Therefore, the updated electric field vectors corresponding to each orthogonal grid and the FDTD algorithm can be used to update the magnetic field vectors corresponding to each orthogonal grid.

[0108] As can be seen from the above technical solution, this embodiment provides an optional method for updating the electric field vector and magnetic field vector at each time step using the FDTD algorithm. Through this method, the electric field vector of the simulated diode can be considered separately, and the electric field vector of the simulated diode can be calculated based on its physical characteristics, thereby calculating the entire magnetic field. Based on this, the nonlinear characteristics of the diode are considered in the calculation of the electric field vector and magnetic field vector, further improving the accuracy and reliability of this application.

[0109] In some embodiments of the application, considering the high nonlinearity of diode devices, the electromagnetic field near the simulated diode is prone to severe distortion due to dispersion issues inherent in the FDTD algorithm, generating spatial high-frequency harmonic components. While the amplitude of these spatial high-frequency harmonic components is initially small, differing from the dominant frequency component by several orders of magnitude, it is exponentially amplified during iterative calculations, potentially leading to divergence in the calculation results within extreme timeframes. Therefore, in step S310, when updating the electric field vector and magnetic field vector at the current time step, this application, after updating the electric field vectors of all orthogonal grids in the electric field except for the electric field vector corresponding to the simulated diode using the FDTD algorithm, adds a filtering process. This filtering process will be described in detail below:

[0110] S313. Determine multiple electric field vectors near the simulated diode.

[0111] Specifically, the extent of the adjacent region can be determined based on the severity of electromagnetic field distortion and the number of high-frequency harmonic components in space. For example, when the electromagnetic field distortion is slight and the number of high-frequency harmonic components in space is low, the adjacent region is small, and vice versa. Generally, the adjacent region is 10×10×10.

[0112] Once the vicinity range is determined, the region centered on the simulated diode and matching this range is defined as the vicinity region. Multiple electric field vectors within this vicinity region are then used as the electric field vectors of the vicinity of the simulated diode.

[0113] S314. Replace each electric field vector adjacent to the simulated diode with the electric field vector obtained after high-frequency filtering.

[0114] Specifically, this application employs high-frequency spatial filtering technology. First, multiple electric field vectors near the simulated diode can be transformed from the spatial time domain to the frequency domain, and then a low-pass filter function is used to filter out the spatial high-frequency harmonic components. The filter function is shown below:

[0115]

[0116]

[0117] in, This represents the spatial harmonic components corresponding to the unfiltered electric field vector. Let k1 be the spatial harmonic component corresponding to the filtered electric field vector, and k1 be the wave number. The cutoff wave number, The electric field vector after high-frequency filtering needs to be obtained through inverse frequency-to-time transformation in order to perform subsequent time-domain electromagnetic coupling iterative calculations.

[0118] As can be seen from the above technical solution, this embodiment provides an optional method for filtering out high-frequency components. By filtering out the high-frequency components of multiple electric field vectors near the simulated diode, high-frequency harmonic components that may cause the calculated electric field vector to diverge can be filtered out in real time, improving the applicability and stability of this application.

[0119] Furthermore, it solves the problem of spatiotemporal coupling between simulated diodes (lumped parameter elements) and distributed parameter electromagnetic fields, providing a systematic, efficient, and accurate solution for transient process analysis of flexible DC transmission projects that include diodes.

[0120] In some embodiments of this application, the process of updating the electric field vector corresponding to the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm is described as follows:

[0121] S3110. Using the electric field vector corresponding to the simulated diode at the previous time step and the size of the orthogonal grid corresponding to the electric field vector, calculate the voltage of the simulated diode.

[0122] Specifically, the size of the orthogonal grid edge coinciding with the simulated diode can be determined, and the voltage of the simulated diode can be obtained by multiplying this size by the electric field vector of the previous time step.

[0123] S3111. Using the voltage of the simulated diode and the corresponding physical characteristic parameters of the simulated diode, calculate the current value of the controlled current source of the simulated diode at the current time step and the capacitance value of the junction capacitance.

[0124] Specifically, a real diode in the form of a lumped-parameter element can be represented as an equivalent circuit consisting of a controlled current source in parallel with a capacitor, such as... Figure 3 As shown.

[0125] Controlled current source I D (V) represents the ideal current flowing through the PN junction of the diode. The expression for the controlled current source function is shown below:

[0126]

[0127] The junction capacitance C(V) characterizes the junction capacitance of a diode. The junction capacitance C(V) is equal to the barrier capacitance C. j and diffusion capacitance C d The sum of these, and the junction capacitance function expression are as follows:

[0128]

[0129]

[0130] F2 = (1 - FC) 1+m

[0131] F3 = 1 - FC(1 + m)

[0132] Where V is the voltage of the simulated diode, and I is... S Let n be the saturation current, n1 be the emission coefficient, q be the electron charge, k be the Boltzmann constant, T be the absolute temperature, and τ be the saturation current. D The sum of the time constants of holes and electrons, C j0 Where M is the zero-bias barrier capacitance, m is the gradient coefficient, m is the impurity distribution index, and V is the impurity distribution index. j FC is the built-in potential of the power diode and the deep forward bias state coefficient.

[0133] S3112. Using the current value and the capacitance value, the electric field vector corresponding to the simulated diode is updated using the FDTD algorithm.

[0134] Specifically, the above-mentioned analytical expressions for controlled current source and junction capacitance can be combined with the above-mentioned classical electric field update equation to obtain the analytical expression for updating the electric field vector of the simulated diode, thereby realizing the updating of the electric field vector corresponding to the simulated diode using the current value and the capacitance value combined with the FDTD algorithm.

[0135] The classical electric field update equation combining the analytical expressions for controlled current sources and junction capacitances changes with the direction of the orthogonal grid edge that coincides with the simulated diode. For example, when the simulated diode coincides with the orthogonal grid edge in the z direction, the classical electric field update equation combining the analytical expressions for controlled current sources and junction capacitances becomes the electric field update equation corresponding to the z direction.

[0136] When the analytical equations for the controlled current source and junction capacitance are combined with the electric field update equation in the z-direction, the analytical equation for the electric field vector of the simulated diode when it coincides with the orthogonal grid edge in the z-direction is obtained as follows:

[0137]

[0138]

[0139]

[0140]

[0141]

[0142] When high precision is not required or the simulated diode is reverse biased, the ideal current I flowing through the diode's PN junction is... D The voltage (V) and junction capacitance C(V) remain essentially unchanged with the voltage across the diode. and The parameter A can be ignored, i.e., A = 0. In this case, the analytical expression for the electric field vector corresponding to the simulated diode can be rewritten as:

[0143]

[0144] Among them, I D C represents the ideal current of the simulated diode calculated using the controlled current source analytical formula, C represents the capacitance value of the simulated diode calculated using the junction capacitance analytical formula, and N represents the relationship between the voltage of the simulated diode and the FDTD reference direction.

[0145] When the voltage of the simulated diode is in the same direction as the FDTD reference direction, N = +1; when the voltage of the simulated diode is in the opposite direction to the FDTD reference direction, N = -1.

[0146] Next, we will combine Figure 4 The following example illustrates the application of a simulated diode coinciding with an orthogonal grid edge in the z-direction.

[0147] When the simulated diode coincides with an orthogonal grid edge in the z-direction, the direction of the voltage of the simulated diode and the z-direction are used as the reference direction for the FDTD, such as... Figure 4 As shown.

[0148] See Figure 4 When the voltage direction of the simulated diode is in the same direction as the z-direction, N = +1; when the voltage direction of the simulated diode is in the opposite direction to the z-direction, N = -1.

[0149] As can be seen from the above technical solution, compared with the previous embodiment, this embodiment provides an optional method for calculating the electric field vector of the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm. Therefore, the above steps can effectively combine the key physical characteristics of the real diode and the FDTD algorithm during the electromagnetic simulation process, thereby enabling more accurate electromagnetic simulation of the diode.

[0150] In some embodiments of this application, the process of updating the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector and the FDTD algorithm is described in detail as follows:

[0151] S3120. Determine the equivalent relative permeability of each of the orthogonal grids.

[0152] Specifically, the equivalent relative permeability corresponding to each orthogonal grid can be determined, and the magnetic field vector corresponding to each orthogonal grid can be updated using the equivalent relative permeability of each orthogonal grid. Generally, the equivalent relative permeability of each orthogonal grid can be regarded as 1.

[0153] S3121. Update the magnetic field vector corresponding to each orthogonal grid using the equivalent relative permeability of each orthogonal grid, the updated electric field vector corresponding to each orthogonal grid, and the FDTD algorithm.

[0154] Specifically, when updating each magnetic field vector, we can consider using the vector values ​​of the four electric field vectors surrounding the magnetic field vector at the previous time step to update the electric field vector at the current time step. Therefore, we can consider using the classical magnetic field update equation in the FDTD algorithm, which includes the magnetic field update equation corresponding to the x-direction, the electric field and magnetic field equation in the y-direction, and the magnetic field update equation in the z-direction.

[0155] The magnetic field update equation corresponding to the x-direction is shown below:

[0156]

[0157] The magnetic field update equation in the y-direction is shown below:

[0158]

[0159] The magnetic field update equation corresponding to the z-direction is shown below:

[0160]

[0161] Where, σ m Let μ be the equivalent relative permeability of the corresponding orthogonal grid, and μ be the permeability within the corresponding orthogonal grid.

[0162] The electromagnetic simulation device for diodes provided in the embodiments of this application will be described below. The electromagnetic simulation device for diodes described below can be referred to in correspondence with the electromagnetic simulation method for diodes described above.

[0163] like Figure 5 As shown, a schematic diagram of an electromagnetic simulation device for a diode is disclosed. This device may include:

[0164] Construction unit 1 is used to construct an electromagnetic simulation calculation region, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0165] The meshing unit 2 is used to perform finite-difference time-domain (FDTD) meshing on the electromagnetic simulation calculation region based on the simulated diode as a lumped parameter element, to obtain a set of orthogonal meshes;

[0166] Iteration unit 3 is used to continuously iterate the electric field vector and magnetic field vector of each of the orthogonal grids and the simulated diode using the FDTD algorithm until a preset condition is reached. The electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each of the orthogonal grids and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each of the orthogonal grids and the simulated diode.

[0167] Furthermore, the partitioning unit may include:

[0168] The mesh acquisition unit is used to perform mesh partitioning on the electromagnetic simulation calculation region based on the simulated diode as a lumped parameter element using the non-uniform mesh discretization technique of the FDTD algorithm, to obtain a set of orthogonal meshes.

[0169] Furthermore, the iterative unit may include:

[0170] The time step calculation unit is used to determine the time step of the electromagnetic simulation calculation region based on the size of each of the orthogonal grids.

[0171] The algorithm utilizes a unit to update the three-dimensional orthogonal electric field vector and the three-dimensional orthogonal magnetic field vector corresponding to each orthogonal grid at each time step using the FDTD algorithm.

[0172] Furthermore, the algorithm utilization unit may include:

[0173] The grid electric field vector update unit is used to update the electric field vectors of each orthogonal grid except for the electric field vector corresponding to the simulated diode when updating the electric field vector and magnetic field vector at the current time step.

[0174] The diode electric field vector update unit is used to update the electric field vector of the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm.

[0175] The magnetic field vector update unit is used to update the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector and the FDTD algorithm.

[0176] Furthermore, the algorithm utilization unit may include:

[0177] A vector determination unit is used to determine multiple electric field vectors adjacent to the simulated diode;

[0178] The vector filtering unit is used to replace each electric field vector adjacent to the simulated diode with the electric field vector obtained after high-frequency filtering, and then return it to the magnetic field vector update unit.

[0179] Furthermore, the diode electric field vector update unit may include:

[0180] The voltage calculation unit is used to calculate the voltage of the simulated diode using the electric field vector corresponding to the simulated diode at the previous time step and the size of the orthogonal grid corresponding to the electric field vector.

[0181] The capacitance calculation unit is used to calculate the current value of the controlled current source and the capacitance value of the junction capacitance of the simulated diode at the current time step using the voltage of the simulated diode and the corresponding physical characteristic parameters of the simulated diode.

[0182] The current value utilization unit is used to update the electric field vector corresponding to the simulated diode using the current value and the capacitance value, combined with the FDTD algorithm.

[0183] Furthermore, the magnetic field vector update unit may include:

[0184] An equivalent relative permeability determination unit is used to determine the equivalent relative permeability of each of the orthogonal grids;

[0185] The equivalent relative permeability utilization unit is used to update the magnetic field vector corresponding to each orthogonal grid using the equivalent relative permeability of each orthogonal grid, the updated electric field vector corresponding to each orthogonal grid, and the FDTD algorithm.

[0186] The electromagnetic simulation device for diodes provided in this application embodiment can be applied to electromagnetic simulation equipment for diodes, such as PC terminals, servers, and server clusters. Optionally, Figure 6 The hardware structure block diagram of the diode electromagnetic simulation device is shown. (Refer to...) Figure 6 The hardware structure of the diode electromagnetic simulation device may include: at least one processor 1, at least one communication interface 2, at least one memory 3, and at least one communication bus 4.

[0187] In this embodiment of the application, the number of processor 1, communication interface 2, memory 3, and communication bus 4 is at least one, and processor 1, communication interface 2, and memory 3 communicate with each other through communication bus 4;

[0188] Processor 1 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement embodiments of the present invention.

[0189] Memory 3 may include high-speed RAM, and may also include non-volatile memory, such as at least one disk storage device;

[0190] The memory stores a program, which the processor can call. The program is used for:

[0191] An electromagnetic simulation calculation region is constructed, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0192] Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is divided into a set of orthogonal grids by the finite-difference time-domain method (FDTD).

[0193] The FDTD algorithm is used to iterate the electric field vector and magnetic field vector of each orthogonal grid and the simulated diode until a preset condition is reached. The electric field of the electromagnetic simulation calculation region is composed of the electric field vector of each orthogonal grid and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vector of each orthogonal grid and the simulated diode.

[0194] Optionally, the refined and extended functions of the program can be found in the description above.

[0195] This application embodiment also provides a storage medium that can store a program suitable for execution by a processor, the program being used for:

[0196] An electromagnetic simulation calculation region is constructed, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects.

[0197] Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is divided into a set of orthogonal grids by the finite-difference time-domain method (FDTD).

[0198] The FDTD algorithm is used to iterate the electric and magnetic field vectors of each orthogonal grid and the simulated diode until a preset condition is met. The electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each orthogonal grid and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each orthogonal grid and the simulated diode. Optionally, the refinement and extension functions of the program can be found in the description above.

[0199] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0200] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0201] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. The various embodiments of this application can be combined with each other. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An electromagnetic simulation method for a diode, characterized in that, include: An electromagnetic simulation calculation region is constructed, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects. Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is partitioned using the Finite-Difference Time-Domain (FDTD) method to obtain a set of orthogonal grids. The simulated diode has a unique corresponding electric field vector, and each orthogonal grid corresponds to a three-dimensional orthogonal electric field vector. One electric field vector corresponding to one orthogonal grid is the unique electric field vector corresponding to the simulated diode. The simulated diode also has multiple corresponding magnetic field vectors, and each orthogonal grid corresponds to a three-dimensional orthogonal magnetic field vector. These multiple magnetic field vectors are the multiple magnetic field vectors corresponding to the orthogonal grids associated with the simulated diode. The time step of the electromagnetic simulation calculation region is determined based on the size of each of the orthogonal grids. At each time step, the FDTD algorithm is used to update the electric field vectors of all orthogonal grids in the electric field, except for the electric field vector corresponding to the simulated diode. The electric field vector of the simulated diode is updated using the physical characteristic parameters of the simulated diode and the FDTD algorithm. Determine multiple electric field vectors adjacent to the simulated diode; Replace each electric field vector adjacent to the simulated diode with the electric field vector obtained after high-frequency filtering; The electric field vectors corresponding to each orthogonal grid are updated using the updated electric field vectors and the FDTD algorithm until a preset condition is met. The electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each orthogonal grid and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each orthogonal grid and the simulated diode.

2. The electromagnetic simulation method for diodes according to claim 1, characterized in that, Based on the simulated diode as a lumped parameter element, the electromagnetic simulation calculation region is meshed using the finite-difference time-domain (FDTD) method to obtain a set of orthogonal meshes, including: Using the non-uniform grid discretization technique of the FDTD algorithm, the electromagnetic simulation calculation region is meshed based on the simulated diode as a lumped parameter element to obtain a set of orthogonal grids.

3. The electromagnetic simulation method for diodes according to claim 1, characterized in that, The simulated diode is equivalent to a controlled current source and a junction capacitance connected in parallel. The step of updating the electric field vector of the simulated diode using the physical characteristic parameters of the simulated diode and the FDTD algorithm includes: The voltage of the simulated diode is calculated using the electric field vector corresponding to the diode at the previous time step and the size of the orthogonal grid corresponding to the electric field vector. Using the voltage of the simulated diode and the corresponding physical characteristic parameters of the simulated diode, calculate the current value of the controlled current source and the capacitance value of the junction capacitance of the simulated diode at the current time step. The electric field vector corresponding to the simulated diode is updated using the current value and the capacitance value, combined with the FDTD algorithm.

4. The electromagnetic simulation method for diodes according to claim 1, characterized in that, The step of updating the magnetic field vector corresponding to each orthogonal grid using the updated electric field vector and the FDTD algorithm includes: Determine the equivalent relative permeability of each of the orthogonal grids; The magnetic field vector corresponding to each orthogonal grid is updated using the equivalent relative permeability of each orthogonal grid, the updated electric field vector corresponding to each orthogonal grid, and the FDTD algorithm.

5. An electromagnetic simulation device for a diode, characterized in that, include: A construction unit is used to construct an electromagnetic simulation calculation region, which includes a simulated diode and one or more simulated objects that form electromagnetic coupling with the simulated diode. The electromagnetic simulation calculation region is the area that needs to be focused on when performing electromagnetic simulation on the simulated diode and each of the simulated objects. The meshing unit is used to perform finite-difference time-domain (FDTD) meshing on the electromagnetic simulation calculation region based on the simulated diode as a lumped parameter element, to obtain a set of orthogonal meshes. The simulated diode has a unique corresponding electric field vector, and each orthogonal mesh corresponds to a three-dimensional orthogonal electric field vector, wherein one electric field vector corresponding to one orthogonal mesh is the unique electric field vector corresponding to the simulated diode. The simulated diode has multiple corresponding magnetic field vectors, and each orthogonal mesh corresponds to a three-dimensional orthogonal magnetic field vector, wherein the multiple magnetic field vectors corresponding to the simulated diode are the multiple magnetic field vectors corresponding to the orthogonal meshes associated with the simulated diode. An iterative unit is used to determine the time step of the electromagnetic simulation calculation region based on the size of each of the orthogonal grids; at each time step, the FDTD algorithm is used to update the electric field vectors of all orthogonal grids except the electric field vector corresponding to the simulated diode; the physical characteristic parameters corresponding to the simulated diode are used to update the electric field vector corresponding to the simulated diode; multiple electric field vectors adjacent to the simulated diode are determined; each electric field vector adjacent to the simulated diode is replaced with the electric field vector obtained after high-frequency filtering; the updated electric field vectors corresponding to each orthogonal grid are used to update the magnetic field vectors corresponding to each orthogonal grid and the FDTD algorithm until a preset condition is met, wherein the electric field of the electromagnetic simulation calculation region is composed of the electric field vectors of each of the orthogonal grids and the simulated diode, and the magnetic field of the electromagnetic simulation calculation region is composed of the magnetic field vectors of each of the orthogonal grids and the simulated diode.

6. An electromagnetic simulation device for diodes, characterized in that, Including memory and processor; The memory is used to store programs; The processor is used to execute the program to implement the various steps of the electromagnetic simulation method for diodes as described in any one of claims 1-4.

7. A readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the steps of the electromagnetic simulation method for diodes as described in any one of claims 1-4.

Images