Vanadium dioxide-based terahertz amplitude and phase modulator unit

Abstract

This invention discloses a terahertz amplitude and phase modulator unit based on vanadium dioxide, mainly solving the problem of mutual interference between modulation modes in amplitude and phase modulation in existing technologies. It includes a substrate (1) and a bright-mode dicing line (2), a dark-mode opening ring (3), and two rectangular switches (4, 5) located on the substrate. The first rectangular switch (4) is located on the opening of the dark-mode opening ring, either closing the opening or filling the internal space of the opening ring. The second rectangular switch (5) is located between the bright-mode dicing line and the dark-mode opening ring, and is connected to the long side of the bright-mode dicing line. Its top is flush with the top of the first rectangular switch. The distance between the bright-mode dicing line and the dark-mode opening ring is adjustable within a range less than three times the linewidth of the bright-mode dicing line. This invention can achieve amplitude and phase modulation without interference at the same operating frequency, and has minimal interference to the transmission amplitude and phase characteristics of adjacent frequency bands. It can be used for terahertz communication and 6G communication.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic functional device technology, specifically relating to a terahertz same-frequency amplitude and phase modulator unit, which can be used for terahertz communication and 6G communication. Technical Background

[0002] Terahertz waves refer to electromagnetic waves with a frequency range of 0.1–10 THz, and they have enormous application potential in wireless communication, electronic countermeasures, radar, medical imaging, and security inspection. Currently, research on dynamically tunable terahertz devices is one of the key research areas in terahertz communication technology and 6G communication technology. Among these, terahertz modulators based on active electromagnetic metamaterials are a key research direction for tunable terahertz devices and have become an important component of the transmitter in the specific implementation platform of related communication technologies, used to dynamically control the transmission characteristics of terahertz waves, such as frequency, amplitude, phase, polarization, and direction. Such terahertz modulators are composed of periodically arranged metamaterial units, which include a substrate, a metallic artificial microstructure, and a switching structure. Vanadium dioxide, as a representative phase change material, possesses phase change characteristics that transition from an insulating state to a metallic state under the influence of external biases such as light, voltage, and temperature, mainly manifested as a dynamic change in the material's conductivity. It is an ideal material for constructing the switching structure on active metamaterial terahertz modulators.

[0003] Currently, utilizing active terahertz amplitude modulators and active terahertz phase modulators to modulate terahertz waves is a major research direction in terahertz communication and 6G communication. Specifically: under the dynamic control of an external control source, active terahertz amplitude modulators can be used to set different amplitudes for terahertz signals to achieve amplitude modulation; active terahertz phase modulators can be used to set different phases for terahertz signals to achieve phase modulation. In practical communication applications, to improve the system integration at the transmitting end, it is desirable for terahertz modulators to have multiple non-interfering information modulation modes, while minimizing the impact on the transmission amplitude and phase of terahertz waves in adjacent frequency bands, thereby achieving efficient utilization of the terahertz communication spectrum.

[0004] In 2012, Jianqiang Gu's team first proposed a classic active terahertz amplitude modulator design based on phase change materials in "Active control of electromagnetically induced transparency analogue in terahertz metamaterials" (Nature Communications, 2012, 3(1): 1-6), whose unit structure is as follows: Figure 1As shown, the metal artificial microstructure on its unit adopts an electromagnetically induced transparent EIT structure composed of a bright mode cutting line and a dark mode open ring. An active EIT structure is formed by loading a phase change material switch at the opening of the dark mode open ring. The metal artificial microstructure itself possesses multi-band filtering characteristics and narrow-band transmission characteristics. The loaded phase change material switch enables the modulator to achieve resonant mode switching between EIT response and dipole oscillation before and after the phase transition, ultimately achieving effective terahertz wave amplitude control in a narrow frequency band with good amplitude modulation depth. Simultaneously, it has minimal impact on the transmission amplitude and phase in adjacent frequency bands, which is beneficial for the efficient utilization of the terahertz communication spectrum. However, this modulator can only perform amplitude control on a single narrow frequency band of terahertz waves, resulting in a relatively simple information modulation mode. It cannot fully meet the multi-communication mode requirements of future transmitters, and the system integration is low.

[0005] To enable active terahertz modulators to possess multiple information modulation modes and reduce the number of active terahertz modulators in the transmitter, thereby further improving the integration of terahertz communication systems, Yaxin Zhang's team proposed a multimode terahertz modulator structure capable of amplitude and phase modulation in "Gbpsterahertz external modulator based on a composite metamaterial with a double-channel heterostructure" (Nano letters, 2015, 15(5): 3501-3506). Its unit structure is as follows: Figure 2 As shown, the unit includes a short-circuit switch with a dual-channel heterogeneous structure and three DC voltage bias lines for controlling the switch's on / off state. Under external voltage control, the modulator can achieve resonant mode switching between two different dipole oscillations and implement two information modulation modes—amplitude modulation and phase modulation—at two frequency points respectively. However, before, during, and after the switch is turned on and off, the amplitude changes at the amplitude modulation frequency point and the phase changes at the phase modulation frequency point are mutually influential, meaning the information modulation modes interfere with each other, hindering further improvements in the communication system's integration. Summary of the Invention

[0006] The purpose of this invention is to address the shortcomings of the prior art by proposing a vanadium dioxide-based terahertz amplitude and phase modulator unit to reduce mutual interference between two information modulation modes, improve the system integration of the transmitter, and simultaneously reduce the impact on the transmission amplitude and phase of terahertz waves in adjacent frequency bands, thereby improving the utilization rate of the terahertz spectrum.

[0007] To achieve the above object, the present invention provides a coupled enhanced terahertz amplitude modulator unit based on vanadium dioxide, which includes a substrate 1, a bright mode cutting line 2, a dark mode split ring resonator 3, a first rectangular switch 4 and a second rectangular switch 5 located on the substrate 1. The characteristics are as follows:

[0008] The distance d between the bright mode cutting line 2 and the dark mode split ring resonator 3 satisfies d < 3w, where w is the line width of the bright mode cutting line 2;

[0009] The first rectangular switch 4 is located at the opening of the dark mode split ring resonator 3, closing the opening or filling the internal space of the split ring resonator;

[0010] The second rectangular switch 5 is located between the bright mode cutting line 2 and the dark mode split ring resonator 3, and is connected to the long side of the bright mode cutting line 2, and its top is flush with the top of the first rectangular switch 4.

[0011] Further, there are two dark mode split ring resonators 3 arranged in a "吅" shape, and the bright mode cutting line 2 is vertically located between the two dark mode split ring resonators 3, and the opening directions of the two dark mode split ring resonators 3 face upward.

[0012] Further, there are two dark mode split ring resonators 3 arranged in a "吕" shape, and the bright mode cutting line 2 is vertically located on the same side of the two dark mode split ring resonators 3. The opening directions of the two dark mode split ring resonators 3 are opposite and parallel to the bright mode cutting line 2.

[0013] Further, the dark mode split ring resonator 3 is [[ID=2o]]In the shape of four arranged in a certain pattern, the bright mode cutting line 2 is vertically located between the four dark mode split ring resonators 3. The opening directions of the four dark mode split ring resonators 3 are all parallel to the bright mode cutting line 2, and the opening directions of the two dark mode split ring resonators 3 at the same end of the bright mode cutting line 2 are the same, and the opening directions of the two dark mode split ring resonators 3 on the same side of the bright mode cutting line 2 are opposite.

[0014] Further, the bottom edge of the opening of the dark mode split ring resonator 3 is aligned with one end of the bright mode cutting line 2, and its opening is aligned with the center of the dark mode split ring resonator 3.

[0015] Further, the width a of the dark mode split ring resonator 3 ≤ 0.4s, the height b ≤ 0.4s, the line width c ≈ w, the opening width g ≤ a - 4c, and satisfies 2a + 2b - g - 4c ≈ s, where s is the height of the bright mode cutting line 2, s < 0.5λ, and λ is the wavelength of the working frequency point of the modulator.

[0016] Further, both the bright mode cutting line 2 and the dark mode split ring resonator 3 are made of a metal material with a conductivity σ > 1×10 7 S / m, and its thickness t1 satisfies 0.2μm ≤ t1 ≤ 0.4μm.

[0017] Furthermore, the width j≤d, height k=b, and thickness t2 of the second rectangular switch 5 satisfy 0.2μm≤t2≤0.4μm, where b is the width of the dark mold opening ring 3.

[0018] Furthermore, the width p of the substrate 1 satisfies s < p < 1.2s, its height q satisfies s < q < 1.2s, and its thickness h satisfies h < 0.1mm or h > 0.5mm, where s is the height of the open mold cutting line 2.

[0019] Furthermore, the substrate 1 is made of any one of silicon, silicon oxide, aluminum oxide, sapphire, or polyimide; the first rectangular switch 4 and the second rectangular switch 5 are made of vanadium dioxide, and their number is the same as the number of dark mold opening rings 3.

[0020] Compared with the prior art, the present invention has the following advantages:

[0021] First, by using a first rectangular switch to close the opening of the dark mode opening ring or fill the internal space of the opening ring, and by connecting the second rectangular switch, which is located between the open mode cutting line and the dark mode opening ring, to the long side of the open mode cutting line, the present invention can extend the electrical resonance length of the dipole oscillation in the metallic state, so that the modulator unit can achieve amplitude modulation and phase modulation without interference at the same operating frequency, thereby improving the system integration of the transmitter.

[0022] Secondly, because the present invention can adjust the distance between the open mold cutting line and the dark mold opening ring and the width of the second rectangular switch, the dipole oscillation frequency in the metallic state is similar to the low-frequency reflection frequency in the insulating state. This can reduce the influence of the modulator on the transmission amplitude and phase of terahertz waves in adjacent frequency bands before and after the phase transition, which is beneficial to the efficient utilization of the terahertz communication spectrum.

[0023] Third, the present invention simplifies the control method of the modulator because the first rectangular switch and the second rectangular switch are controlled by the same external control source. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure in existing document 1;

[0025] Figure 2 This is a schematic diagram of the structure in existing document 2;

[0026] Figure 3 This is a schematic diagram of the structure of the first embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram of the modulator structure constructed using the first embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of the structure of the second embodiment of the present invention;

[0029] Figure 6 Schematic diagram of a modulator structure composed of the second embodiment of the present invention;

[0030] Figure 7 Schematic diagram of the structure of the third embodiment of the present invention;

[0031] Figure 8 Schematic diagram of a modulator structure composed of the third embodiment of the present invention;

[0032] Figure 9 Unit frequency-domain transmission characteristic curve of the first embodiment of the present invention;

[0033] Figure 10 Unit frequency-domain transmission characteristic curve of the second embodiment of the present invention;

[0034] Figure 11 Unit frequency-domain transmission characteristic curve of the third embodiment of the present invention. Specific embodiments

[0035] To make the objectives, technical solutions of the present invention clearer, the embodiments and effects of the present invention will be further described below with reference to the accompanying drawings.

[0036] Embodiment 1: A terahertz co-frequency amplitude-phase modulator unit in which two dark-mode split-ring resonators 3 are arranged in a "吅" shape.

[0037] Refer to Figure 3 , this example includes a substrate 1, a bright-mode cutting line 2, two dark-mode split-ring resonators 3, two first rectangular switches 4, and two second rectangular switches 5. Among them, on the same surface of the substrate 1, the two dark-mode split-ring resonators 3 are arranged in a "吅" shape and mirror-imaged on the left and right sides of the bright-mode cutting line 2. The opening directions of the two dark-mode split-ring resonators 3 are upward, the bottom edges of their openings are aligned with the lower end of the bright-mode cutting line 2, and the opening positions are aligned with the centers of the dark-mode split-ring resonators 3 themselves; each first rectangular switch 4 is located on the opening of the dark-mode split-ring resonator 3, and its size is the same as the opening size to close the opening; each second rectangular switch 5 is located between the bright-mode cutting line 2 and the dark-mode split-ring resonator 3 and is connected to the bright-mode cutting line 2 and the dark-mode split-ring resonator 3, and its top is flush with the side of the dark-mode split-ring resonator 3 with an opening.

[0038] The width w of the bright-mode cutting line 2 is 4 μm, and the height s is 90 μm; the width a of the dark-mode split-ring resonator 3 is 27 μm, the height b is 30.11 μm, the line width c is 4 μm, and the opening width g is 4 μm; the distance d between the bright-mode cutting line 2 and the dark-mode split-ring resonator 3 is 6 μm; the thickness t1 of the bright-mode cutting line 2 and the dark-mode split-ring resonator 3 is 0.2 μm, and their materials are both Au, and the conductivity σ Au = 4.561×10 7 S / m.

[0039] The second rectangular switch 5 has a width j = d, a height k = b, and a thickness t2 = 0.2 μm. Its material and that of the first rectangular switch 4 is vanadium dioxide, and the dielectric constant has a conductivity of 10 S / m in the insulating state. When excited by an external temperature or laser irradiation, it exhibits a metallic state with a maximum conductivity of 3×10 5 S / m.

[0040] The substrate 1 has a width p = 110 μm, a height q = 110 μm, and a thickness h = 10 μm. Its material is polyimide, and its relative dielectric constant ε r_Polymide = 3.5, and the loss tangent tanδ = 0.0027.

[0041] The above units are arranged in a regular quadrilateral period to form an array to compose a modulator, as Figure 4 shown, for realizing the modulation of terahertz waves.

[0042] Example 2: A terahertz co-frequency amplitude-phase modulator unit in which two dark-mode split-ring resonators 3 are arranged in a "Lv" shape.

[0043] Referring to Figure 5 , this example includes a substrate 1, a bright-mode cutting line 2, two dark-mode split-ring resonators 3, two first rectangular switches 4, and two second rectangular switches 5. Among them, on the same surface of the substrate 1, the two dark-mode split-ring resonators 3 are vertically arranged in a "Lv" shape on the right side of the bright-mode cutting line 2. The opening directions of the two dark-mode split-ring resonators 3 are opposite, and the bottom edges of their openings are respectively aligned with the two endpoints of the bright-mode cutting line 2, and the opening positions are aligned with the centers of the dark-mode split-ring resonators 3 themselves. Each first rectangular switch 4 is located inside the opening of the dark-mode split-ring resonator 3, filling the internal space of the opening ring. Each second rectangular switch 5 is located between the bright-mode cutting line 2 and the dark-mode split-ring resonator 3 and is connected to the long side of the bright-mode cutting line 2, and its top is flush with the side with the opening of the dark-mode split-ring resonator 3.

[0044] The bright-mode cutting line 2 has a width w = 4 μm and a height s = 90 μm; the dark-mode split-ring resonator 3 has a width a = 28 μm, a height b = 28.8 μm, a line width c = 4 μm, and an opening width g = 4 μm; the distance d between the bright-mode cutting line 2 and the dark-mode split-ring resonator is 8 μm; the thickness t1 of the bright-mode cutting line 2 and the dark-mode split-ring resonator 3 is 0.3 μm, and their materials are both Au, and the conductivity σ Au = 4.561×10 7 S / m.

[0045] The second rectangular switch 5 has a width j = 4.6 μm, a height k = b, and a thickness t2 = 0.3 μm. Its material and that of the first rectangular switch 4 is vanadium dioxide, and the dielectric constant Its conductivity in the insulating state is 10 S / m. When excited by external temperature or laser irradiation, it exhibits a metallic state with a maximum conductivity of 3 × 10⁻⁶. 5 S / m.

[0046] The substrate 1 has a width p = 100 μm, a height q = 100 μm, and a thickness h = 10 μm. It is made of crystal and its relative permittivity ε r_Quartz =3.75, loss tangent tanδ =0.0004.

[0047] Arrange the above units in a periodic quadrilateral array to form a modulator, such as... Figure 6 As shown, it is used to achieve modulation of terahertz waves.

[0048] Example 3: Four dark mold opening rings 3 are adopted Terahertz amplitude and phase modulator units arranged in a letter shape.

[0049] Reference Figure 7 This example includes a substrate 1, a visible mold cutting line 2, four dark mold opening rings 3, four first rectangular switches 4, and four second rectangular switches 5. On the same surface of the substrate 1, the four dark mold opening rings 3 are... The letter-shaped mirror images are arranged on the left and right sides of the open mold cutting line 2, and the opening directions of the two dark mold opening rings 3 located on the same side of the open mold cutting line 2 are opposite, with the bottom edge of their openings aligned with the two endpoints of the open mold cutting line 2, and the opening position aligned with the center of the dark mold opening ring 3 itself; each first rectangular switch 4 is located on the opening of the dark mold opening ring 3, and its size is the same as the opening size, so that the opening is closed; each second rectangular switch 5 is located between the open mold cutting line 2 and the dark mold opening ring 3, and is connected to the open mold cutting line 2 and the dark mold opening ring 3, with its top flush with the side of the dark mold opening ring 3 with the opening.

[0050] The exposed die cutting line 2 has a width w = 25 μm and a height s = 485 μm; the concealed die opening ring 3 has a width a = 160 μm, a height b = 170 μm, a line width c = 25 μm, and an opening width g = 25 μm; the distance between the exposed die cutting line 2 and the concealed die opening ring 3 is d = 25 μm; the thickness t1 of both the exposed die cutting line 2 and the concealed die opening ring 3 is 0.4 μm, and their material is Al with an electrical conductivity σ Al =3.56×10 7 S / m.

[0051] The second rectangular switch 5 has a width j = 25 μm, a height k = b, and a thickness t2 = 0.4 μm. It and the first rectangular switch 4 are both made of vanadium dioxide, and their dielectric constant is... Its conductivity in the insulating state is 10 S / m. When excited by external temperature or laser irradiation, it exhibits a metallic state with a maximum conductivity of 3 × 10⁻⁶.5 S / m.

[0052] The substrate 1 has a width p = 530 μm, a height q = 530 μm, and a thickness h = 5 mm. It is made of sapphire with a relative permittivity ε. r_Sapphire =8.88.

[0053] Arrange the above units in a periodic quadrilateral array to form a modulator, such as... Figure 8 As shown, it is used to achieve modulation of terahertz waves.

[0054] The effects of this invention can be further illustrated by the following simulations:

[0055] I. Simulation Conditions

[0056] The modulator unit was simulated using the simulation software CST, with the simulation boundary conditions set to periodic boundary conditions.

[0057] II. Simulation Content and Results:

[0058] Simulation 1: Using the above simulation conditions, the frequency domain transmission characteristics of Embodiment 1 of the present invention were simulated during the transition from an insulating state to a metallic state of the first rectangular switch 4 and the second rectangular switch 5. The results are as follows: Figure 9 As shown. Among them, Figure 9 (a) is the frequency domain transmission amplitude characteristic curve of the unit; Figure 9 (b) is the frequency domain transmission phase characteristic curve of the unit; Figure 9 (c) shows the transmission amplitude and phase parameters extracted at the operating frequency of the rectangular switch under different conductivity conditions.

[0059] Depend on Figure 9 (a) It can be seen that the transmission characteristics of the unit will switch between the two resonance modes of EIT response and dipole oscillation, and the resonance frequency of dipole oscillation is close to the low-frequency reflection frequency of EIT response. This switching process makes the terahertz wave at the operating frequency of 1.049THz have obvious transmission amplitude variation characteristics, while the transmission amplitude variation of terahertz waves in adjacent frequency bands is small.

[0060] Depend on Figure 9 (b) It can be seen that the unit has obvious phase change characteristics at the operating frequency of 1.049THz, while the terahertz wave transmission phase change in adjacent frequency bands is small.

[0061] Depend on Figure 9 (c) It can be seen that at the operating frequency of 1.049 THz, significant amplitude and phase changes occur in different conductivity variation ranges, achieving non-interference between amplitude modulation and phase modulation. Specifically, significant amplitude changes only occur in the range of 10 S / m to 7 × 10⁻⁶. 3Within the conductivity variation range of S / m, the amplitude modulation depth is approximately 32.4%; significant phase changes only occur within 7×10⁻⁶. 3 S / m~3×10 5 Within the conductivity variation range of S / m, the phase modulation magnitude is approximately 41.8°.

[0062] Simulation 2: Using the above simulation conditions, the frequency domain transmission characteristics of Embodiment 2 of the present invention were simulated during the transition from the insulating state to the metallic state of the first rectangular switch 4 and the second rectangular switch 5. The results are as follows: Figure 10 As shown. Among them, Figure 10 (a) is the frequency domain transmission amplitude characteristic curve of the unit; Figure 10 (b) is the frequency domain transmission phase characteristic curve of the unit; Figure 10 (c) shows the transmission amplitude and phase parameters extracted at the operating frequency of the rectangular switch under different conductivity conditions.

[0063] Depend on Figure 10 (a) It can be seen that the transmission characteristics of the unit will switch between the two resonance modes of EIT response and dipole oscillation, and the resonance frequency of dipole oscillation is close to the low-frequency reflection frequency of EIT response. This switching process makes the terahertz wave at the operating frequency of 1.029THz have obvious transmission amplitude variation characteristics, while the transmission amplitude variation of terahertz waves in adjacent frequency bands is small.

[0064] Depend on Figure 10 (b) It can be seen that the unit has obvious phase change characteristics at the operating frequency of 1.029THz, while the terahertz wave transmission phase change in adjacent frequency bands is small.

[0065] Depend on Figure 10 (c) It can be seen that at the operating frequency of 1.029 THz, significant amplitude and phase changes occur in different conductivity ranges, achieving non-interference between amplitude modulation and phase modulation. Specifically, significant amplitude changes only occur in the range of 10 S / m to 3 × 10⁻⁶. 3 Within the conductivity variation range of S / m, the amplitude modulation depth is approximately 38.7%; significant phase changes only occur within 3×10⁻⁶. 3 S / m~3×10 5 Within the conductivity variation range of S / m, the phase modulation magnitude is approximately 47.85°.

[0066] Simulation 3: Using the above simulation conditions, the frequency domain transmission characteristics of Embodiment 3 of the present invention were simulated during the transition from the insulating state to the metallic state of the first rectangular switch 4 and the second rectangular switch 5. The results are as follows: Figure 11 As shown. Among them, Figure 11 (a) is the frequency domain transmission amplitude characteristic curve of the unit; Figure 11(b) is the frequency domain transmission phase characteristic curve of the unit; Figure 11 (c) shows the transmission amplitude and phase parameters extracted at the operating frequency of the rectangular switch under different conductivity conditions.

[0067] Depend on Figure 11 (a) It can be seen that the transmission characteristics of the unit will switch between the two resonance modes of EIT response and dipole oscillation, and the resonance frequency of dipole oscillation is close to the low-frequency reflection frequency of EIT response. This switching process makes the terahertz wave at the operating frequency of 0.11368THz have obvious transmission amplitude variation characteristics, while the transmission amplitude variation of terahertz waves in adjacent frequency bands is small.

[0068] Depend on Figure 11 (b) It can be seen that the unit has obvious phase change characteristics at the operating frequency of 0.11368THz, while the terahertz wave transmission phase change in adjacent frequency bands is small.

[0069] Depend on Figure 11 (c) It can be seen that at the operating frequency of 0.11368 THz, significant amplitude and phase changes occur in different conductivity ranges, achieving non-interference between amplitude modulation and phase modulation. Specifically, significant amplitude changes only occur between 10 S / m and 7 × 10⁻⁶ THz. 3 Within the conductivity variation range of S / m, the amplitude modulation depth is approximately 22%; significant phase changes only occur within 7 × 10⁻⁶. 3 S / m~3×10 5 Within the conductivity variation range of S / m, the phase modulation magnitude is approximately 31°.

[0070] The simulation results above show that the present invention can achieve the conversion between two resonance modes, EIT response and dipole oscillation, by different layouts of the rectangular switch during the switching process from the insulating state to the metallic state. Moreover, the resonance frequency of the dipole oscillation is close to the low-frequency reflection frequency of the EIT response. This conversion process can achieve amplitude modulation and phase modulation without interference at the same frequency point, and the modulation process has little impact on the transmission amplitude and phase of terahertz waves in adjacent frequency bands.

[0071] The above descriptions are merely three specific examples of the present invention and do not constitute any limitation on the present invention. Obviously, those skilled in the art, after understanding the content and principles of the present invention, may make various modifications and changes in form and details without departing from the principles and structure of the present invention. For example, in addition to polyimide, crystal, and sapphire used in the embodiments, the substrate material may also be silicon, silicon oxide, or aluminum oxide. However, these modifications and changes based on the ideas of the present invention are still within the scope of protection of the claims of the present invention.

Claims

1. A terahertz in-phase amplitude and phase modulator unit based on vanadium dioxide, comprising a substrate (1) and a bright-mode cutting line (2), a dark-mode split ring resonator (3), a first rectangular switch (4) and a second rectangular switch (5) located on the substrate (1), characterized in that: The distance d between the bright-mode cutting line (2) and the dark-mode split ring resonator (3) satisfies d < 3w, where w is the line width of the bright-mode cutting line (2); The first rectangular switch (4) is located on the opening of the dark-mode split ring resonator (3) to close the opening or fill the internal space of the split ring resonator; The second rectangular switch (5) is located between the bright-mode cutting line (2) and the dark-mode split ring resonator (3), and is connected to the long side of the bright-mode cutting line (2), and its top is flush with the top of the first rectangular switch (4); The first rectangular switch (4) and the second rectangular switch (5) are made of vanadium dioxide.

2. The modulator unit according to claim 1, characterized in that, There are two dark-mode split ring resonators (3) arranged in a "吅" shape, and the bright-mode cutting line (2) is vertically located between the two dark-mode split ring resonators (3), and the openings of the two dark-mode split ring resonators (3) face upward.

3. The modulator unit according to claim 1, characterized in that, There are two dark-mode split ring resonators (3) arranged in a "吕" shape, and the bright-mode cutting line (2) is vertically located on the same side of the two dark-mode split ring resonators (3), and the openings of the two dark-mode split ring resonators (3) face each other and are parallel to the bright-mode cutting line (2).

4. The modulator unit according to claim 1, characterized in that, There are four dark-mode split ring resonators (3) arranged in a "㗊" shape, and the bright-mode cutting line (2) is vertically located between the four dark-mode split ring resonators (3), and the openings of the four dark-mode split ring resonators (3) are all parallel to the bright-mode cutting line (2), and the openings of the two dark-mode split ring resonators (3) at the same end of the bright-mode cutting line (2) have the same opening direction, and the openings of the two dark-mode split ring resonators (3) on the same side of the bright-mode cutting line (2) face each other.

5. The modulator unit according to claim 1, characterized in that, The bottom edge of the opening of the dark-mode split ring resonator (3) is aligned with one end of the bright-mode cutting line (2), and its opening is aligned with the center of the dark-mode split ring resonator (3).

6. The modulator unit according to claim 1, characterized in that, The width a of the dark-mode split ring resonator (3) satisfies a ≤ 0.4s, the height b satisfies b ≤ 0.4s, the line width c ≈ w, the opening width g ≤ a - 4c, and 2a + 2b - g - 4c ≈ s, where s is the height of the bright-mode cutting line (2), and s < 0.5λ, and λ is the wavelength of the working frequency point of the modulator.

7. The modulator unit according to claim 1, characterized in that, The open mold cutting line (2) and the dark mold opening ring (3) both adopt a conductivity σ>1×10 7 For metallic materials with a thickness of S / m, the thickness t1 satisfies 0.2μm≤t1≤0.4μm.

8. The modulator unit according to claim 1, characterized in that, The width j of the second rectangular switch (5) satisfies j ≤ d, the height k = b, and the thickness t2 satisfies 0.2 μm ≤ t2 ≤ 0.4 μm, where b is the width of the dark-mode split ring resonator (3).

9. The modulator unit according to claim 1, characterized in that, The width p of the substrate (1) satisfies s < p < 1.2s, its height q satisfies s < q < 1.2s, and its thickness h satisfies h < 0.1 mm or h > 0.5 mm, where s is the height of the bright-mode cutting line (2).

10. The modulator unit according to claim 1, characterized in that: The substrate (1) is made of any one of the media of silicon, silicon oxide, aluminum oxide, sapphire, polyimide; The number of the first rectangular switch (4) and the second rectangular switch (5) is the same as the number of the dark-mode split ring resonators (3).

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