Dose rate radiation damage simulation method and system based on real process state of device

Abstract

The application relates to a dose rate radiation damage simulation method and system based on a real process state of a device, and the dose rate radiation damage simulation method based on the real process state of the device comprises the following steps: obtaining radiation damage actual parameters based on a real process state of a device; obtaining an interface state and an oxide charge according to the radiation damage actual parameters; constructing a radiation damage simulation model according to the interface state, the oxide charge and the radiation damage actual parameters; and obtaining the radiation damage simulation model by means of micro-reaction equations and reaction barriers, simulating and training the interface state and the oxide charge, and obtaining the radiation damage simulation model. The method can quickly simulate radiation damage through the radiation damage simulation model.

Description

Technical Field

[0001] This invention relates to the field of semiconductor simulation technology, and more specifically, to a method and system for simulating dose rate radiation damage based on the actual process state of devices. Background Technology

[0002] The total ionization dose effect is an important issue in the study of radiation effects in aerospace electronic systems. Bipolar transistors and circuits are subject to damage enhancement at low dose rates. In particular, at extremely low dose rates (less than 10 mrad(Si) / S), some bipolar devices exhibit a phenomenon where the degree of radiation damage increases as the dose rate decreases.

[0003] In existing technologies, research on the radiation damage characteristics, radiation hardening, and evaluation methods of the ELDRS effect of bipolar devices is mainly based on a dose rate level of 10 mrad(Si) / S. Due to new applications such as high-orbit long-life satellites and deep space exploration, spacecraft face long-term low-dose radiation environments. Therefore, conducting radiation damage simulation studies under extremely low dose rate conditions is crucial for solving the problem of verifying and evaluating the total dose effect of bipolar devices. However, in existing technologies, due to cost, safety, and other issues, it is impossible to obtain radiation damage through actual experiments. Summary of the Invention

[0004] The technical problem to be solved by this invention is how to use simulation to accurately calculate the interface state charge and oxide charge under different irradiation dose rates, total doses, initial defect states, and impurity states.

[0005] To address the above problems, this invention provides a dose rate radiation damage simulation method based on the actual process state of the device, comprising:

[0006] Obtain actual radiation damage parameters based on the actual process conditions of the device;

[0007] Based on the actual parameters of the radiation damage, the interface states and oxide charges are obtained;

[0008] A radiation damage simulation model is constructed based on the interface state, the oxide charge, and the actual parameters of radiation damage.

[0009] Optionally, the actual radiation damage parameters include: initial defect state parameters, and obtaining the interface state and oxide charge based on the actual radiation damage parameters includes:

[0010] The reaction barrier is obtained based on the initial defect state parameters;

[0011] The interface state and the oxide charge are obtained based on the reaction barrier and micro-defect equation.

[0012] Optionally, the actual radiation damage parameters may also include: irradiation dose rate parameters, total irradiation dose parameters, and impurity concentration parameters;

[0013] The step of constructing a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters includes:

[0014] Obtain the initial simulation model;

[0015] The irradiation dose rate parameter, the total irradiation dose parameter, and the impurity concentration parameter are input into the initial simulation model, so that the initial simulation model outputs the reference interface state and the reference oxide charge.

[0016] Based on the comparison between the output of the reference interface state and the reference oxide charge and the experimental data curve, it is determined whether to end the training of the initial simulation model.

[0017] The initial simulation model after training is completed is used as the radiation damage simulation model.

[0018] Optionally, before determining whether to end the training of the initial simulation model, the method further includes:

[0019] Obtain experimental data on radiation damage;

[0020] The experimental data curve was obtained based on the radiation damage experimental data.

[0021] Optionally, the radiation damage experimental data includes actual interface states and actual oxide charges.

[0022] The process of obtaining the experimental data curve based on the radiation damage experimental data includes:

[0023] Based on the actual interface state and the actual oxide charge, the charge curves of the actual interface state and the actual oxide are obtained.

[0024] The experimental data curves are obtained based on the charge curves of the actual interface states and the actual oxides.

[0025] Optionally, after the initial simulation model outputs the reference interface state and reference oxide charge, the method further includes:

[0026] Based on the reference interface state and the reference oxide charge, the charge curves of the reference interface state and the reference oxide are obtained.

[0027] The solution curve is obtained based on the charge curve of the reference interface state and the charge curve of the reference oxide;

[0028] Based on the comparison between the output reference interface state and reference oxide charge and the experimental data curve, determine whether to end the training of the initial simulation model, including:

[0029] The training of the initial simulation model ends when the solution curve fits the experimental data curve.

[0030] Optionally, after constructing the radiation damage simulation model, the method further includes:

[0031] The radiation damage simulation parameters are input into the radiation damage simulation model to obtain the simulated interface states and simulated oxide charges.

[0032] The simulation results are obtained based on the simulated interface state and the simulated oxide charge.

[0033] Optionally, obtaining the reaction barrier based on the initial defect state parameters includes:

[0034] Based on the initial defect state parameters, oxygen vacancy defects are obtained;

[0035] The reaction barrier is obtained based on the oxygen vacancy defect;

[0036] The reaction barrier includes a forward reaction barrier and a reverse reaction barrier.

[0037] Optionally, obtaining the oxygen vacancy defect based on the initial defect state parameters includes:

[0038] Based on the initial defect state parameters, the actual process state of the device is obtained;

[0039] The oxygen vacancy defect is obtained based on the actual process state of the device.

[0040] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention obtains the interface state and oxide charge by autonomously adding micro-reaction equations and reaction barriers, and conducts simulation training on them to obtain a radiation damage simulation model. Through the radiation damage simulation model, the interface state and oxide charge under different irradiation conditions can be quickly simulated to achieve accurate calculation of radiation damage to the device.

[0041] This invention also provides a dose rate radiation damage simulation system based on the actual process state of the device, comprising:

[0042] The acquisition unit is used to acquire actual radiation damage parameters based on the actual process conditions of the device;

[0043] An information processing unit is used to obtain the interface state and oxide charge based on the actual radiation damage parameters;

[0044] A construction unit is used to construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual parameters of radiation damage.

[0045] The dose rate radiation damage simulation system based on the actual process state of the device of the present invention obtains the interface state and oxide charge by autonomously adding microscopic reaction equations and reaction barriers, and conducts simulation training on them to obtain a radiation damage simulation model. Through the radiation damage simulation model, the interface state and oxide charge under different irradiation conditions can be quickly simulated to achieve accurate calculation of radiation damage to the device. Attached Figure Description

[0046] Figure 1 This is a flowchart of the dose rate radiation damage simulation method based on the actual process state of the device in this embodiment of the invention;

[0047] Figure 2 This is a flowchart of the dose rate radiation damage simulation method based on the actual process state of the device in this embodiment of the invention;

[0048] Figure 3 This is a graph showing the solution curves for interface states and oxide charges in an embodiment of the present invention;

[0049] Figure 4 This is a flowchart of the dose rate radiation damage simulation method based on the actual process state of the device in this embodiment of the invention;

[0050] Figure 5 This is a diagram of the interface state charge curve in an embodiment of the present invention;

[0051] Figure 6 This is a charge curve diagram of oxides in an embodiment of the present invention;

[0052] Figure 7 This is a flowchart of the dose rate radiation damage simulation method based on the actual process state of the device in this embodiment of the invention;

[0053] Figure 8 This is a schematic diagram of a dose rate radiation damage simulation system based on the actual process state of the device in an embodiment of the present invention;

[0054] Figure 9 This is a schematic diagram of a computer device in an embodiment of the present invention. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0056] Combination Figure 1 As shown, this embodiment provides a dose rate radiation damage simulation method based on the actual process state of the device, including:

[0057] S1: Obtain actual radiation damage parameters based on the actual process conditions of the device;

[0058] S2: Based on the actual parameters of the radiation damage, obtain the interface state and oxide charge;

[0059] S3: Construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters.

[0060] The acquisition of actual radiation damage parameters based on the actual process state of the device involves obtaining the irradiation dose rate, total irradiation dose, initial defect state, and impurity state when the defects in the SiO2 layer increase after X-ray incident radiation. The irradiation dose rate includes low and high dose rates, typically ranging from 0.901 to 100 rad / s. The total irradiation dose determines the duration of irradiation. The impurity state includes hydrogen gas, with a typical hydrogen concentration of 10%. 13 cm -3 ~10 18 cm -3 ;

[0061] Ionizing radiation reduces transistor gain by introducing interface states and oxide charges into oxides. The interface states increase recombination by providing additional energy levels where convergence can occur, and the oxide charges increase the recombination rate through a given trap by reducing the difference in carrier concentration near the surface. Radiation damage is explained by the formation mechanism of interface states and oxide charges.

[0062] Based on all the above parameters, the interface state and oxide charge are obtained, and a radiation damage simulation model is constructed based on the interface state and oxide charge. The radiation damage simulation model can be constructed based on the TCAD simulation platform.

[0063] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention uses interface states and oxide charges to simulate and train the device to obtain a radiation damage simulation model. Through the radiation damage simulation model, the interface states and oxide charges under different irradiation dose rates, total doses, initial defect states and impurity states can be quickly calculated to achieve accurate calculation of the total dose effect suffered by the device.

[0064] In this embodiment of the application, the actual radiation damage parameters include: initial defect state parameters, and the step of obtaining the interface state and oxide charge based on the actual radiation damage parameters includes:

[0065] The reaction barrier is obtained based on the initial defect state parameters;

[0066] The interface state and the oxide charge are obtained based on the reaction barrier and micro-defect equation.

[0067] In this embodiment, the initial defect state parameters are used to define six intrinsic oxygen vacancy defects. These intrinsic oxygen vacancy defects are categorized into two types based on their release of protons through radiation-induced interactions between electrons and holes and H2 and defects in the oxide, as well as their reaction barriers and configurations. These include: dimer configuration defects V... oδ V oδ H, V oδ H2 and wrinkled configuration defects V oγ V oγ H, V oγ H2; These defects can trap positively charged holes, and can also release protons through H2S cracking or directly release protons to promote the formation of interface states. If the defects are positively charged, they can also act as recombination centers. Therefore, after obtaining the reaction barrier, the interface states and oxide charges are obtained according to the microscopic defect equation and the reaction barrier.

[0068] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention can achieve both accurate simulation and solution of dose effect, i.e. radiation damage, by independently adding micro defect equations and reaction barriers to calculate interface states and oxide charges.

[0069] Combination Figure 2 As shown in the embodiments of this application, the actual radiation damage parameters further include: irradiation dose rate parameter, total irradiation dose parameter, and impurity concentration parameter;

[0070] The step of constructing a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters includes:

[0071] S31: Obtain the initial simulation model;

[0072] S32: Input the irradiation dose rate parameter, the total irradiation dose parameter, and the impurity concentration parameter into the initial simulation model, so that the initial simulation model outputs the reference interface state and the reference oxide charge;

[0073] S35: Based on the comparison results of the output reference interface state and reference oxide charge with the experimental data curve, determine whether to end the training of the initial simulation model;

[0074] S36: Use the initial simulation model after training is completed as the radiation damage simulation model.

[0075] In this embodiment, a radiation damage simulation model can be constructed based on the TCAD simulation platform. The construction of the radiation damage simulation model involves taking the irradiation dose rate parameter, total irradiation dose parameter, and impurity concentration parameter from the actual radiation damage parameters as inputs to the radiation damage simulation model. The output of the radiation damage simulation model is the reference interface state and reference oxide charge. After training, the final radiation damage simulation model for practical application is obtained.

[0076] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention constructs a radiation damage simulation model, and uses irradiation dose rate parameters, total irradiation dose parameters, and impurity concentration parameters as radiation damage parameters, and interface states and oxide charges as results for simulation. It can accurately calculate the interface states and oxide charges under different irradiation conditions for different radiation damage parameters.

[0077] In this embodiment of the application, before determining whether to end the training of the initial simulation model, the method further includes:

[0078] S351: Obtain experimental data on radiation damage;

[0079] S352: Based on the radiation damage experimental data, the experimental data curve is obtained.

[0080] In this embodiment, it is necessary to obtain real radiation damage experimental data to obtain real experimental data curves.

[0081] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention requires the use of real radiation damage experimental data to determine whether the radiation damage simulation model can verify the application purpose, improve the accuracy of the radiation damage simulation model and thus achieve accurate calculation of different radiation damage parameters, namely interface states and oxide charges under different irradiation conditions.

[0082] Combination Figure 3As shown in the embodiments of this application, the radiation damage experimental data includes actual interface states and actual oxide charges. The step of obtaining the experimental data curve based on the radiation damage experimental data includes:

[0083] Based on the actual interface state and the actual oxide charge, the charge curves of the actual interface state and the actual oxide are obtained.

[0084] The experimental data curves are obtained based on the charge curves of the actual interface states and the actual oxides.

[0085] In this embodiment, curves corresponding to the above data are obtained based on the actual interface states and actual oxide charges. Experimental data curves are obtained from these curves and used as comparison curves. These experimental data curves reflect the true influence of radiation damage parameters on interface states and oxide charges, making it easier to determine whether the radiation damage simulation model can be applied.

[0086] Among them, radiation damage parameters can be assigned values, including: irradiation dose rate of 100 rad / s, total irradiation dose of 100 rad, and hydrogen concentration of 10. 18 cm -3 Under the given conditions, the interface states and oxide charges were calculated when the oxide layer thickness was 0.1 μm. The interface state traps and oxide charges were solved and assigned values ​​to obtain experimental data curves, which were then used as comparison curves.

[0087] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention obtains the interface state and oxide charge through the actual radiation damage parameters, and then obtains the actual curve, which facilitates the comparison between the radiation damage simulation model and the actual curve, and determines whether the radiation damage simulation model can verify the application purpose.

[0088] Combination Figures 4 to 6 As shown in the embodiment of this application, after the initial simulation model outputs the reference interface state and the reference oxide charge, the method further includes:

[0089] S33: Based on the reference interface state and the reference oxide charge, obtain the charge curve of the reference interface state and the charge curve of the reference oxide;

[0090] S34: Based on the charge curve of the reference interface state and the charge curve of the reference oxide, obtain the solution curve;

[0091] Based on the comparison between the output reference interface state and reference oxide charge and the experimental data curve, determine whether to end the training of the initial simulation model, including:

[0092] The training of the initial simulation model ends when the solution curve fits the experimental data curve.

[0093] In this embodiment, the simulation training outputs reference interface states and reference oxide charges based on the irradiation dose rate parameter, total irradiation dose parameter, and impurity concentration parameter. The charge curves of the reference interface states and the reference oxides are then obtained based on these parameters to obtain the solution curve. The solution curve is then compared with the aforementioned comparison curve to check if it meets the fitting conditions. If it does, the training of the radiation damage simulation model is stopped.

[0094] The radiation damage simulation model can also be tested by setting the irradiation dose rate to 0.01 rad / s, the total irradiation dose to 100 krad, and the hydrogen concentration to 10. 13 cm -3 Then, the radiation damage simulation model is input to obtain the charge curves of the interface state and the oxide charge curves, and then the solution curve is obtained. It is then determined whether the solution curve and the comparison curve fit each other. If they meet the fitting conditions, the radiation damage simulation model can be applied.

[0095] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention obtains the interface state and oxide charge through the actual radiation damage parameters, and then obtains the actual curve, which facilitates the comparison between the radiation damage simulation model and the actual curve, and determines whether the radiation damage simulation model can verify the application purpose.

[0096] Combination Figure 7 As shown in the embodiments of this application, after constructing the radiation damage simulation model, the method further includes:

[0097] S4: Input the radiation damage simulation parameters into the radiation damage simulation model to obtain the simulated interface state and the simulated oxide charge;

[0098] S5: Based on the simulated interface state and the simulated oxide charge, the simulation results are obtained.

[0099] In this embodiment, the radiation damage simulation model is applied in practice. The radiation damage parameters of the predicted situation are input into the radiation damage simulation model to obtain the interface state and oxide charge after simulation, and the simulation results are obtained. The radiation damage is accurately predicted based on the simulation results, which is crucial for solving the problem of verification and evaluation of the total dose effect of bipolar devices.

[0100] In this embodiment of the application, obtaining the reaction barrier based on the initial defect state parameters includes:

[0101] Based on the initial defect state parameters, oxygen vacancy defects are obtained;

[0102] The reaction barrier is obtained based on the oxygen vacancy defect;

[0103] The reaction barrier includes a forward reaction barrier and a reverse reaction barrier.

[0104] In this embodiment, the intrinsic oxygen vacancy defect is defined by initial defect state parameters. This defect can be customized according to the process state. The oxygen vacancy defect is used to set a reaction barrier, which includes a forward reaction barrier k. f and the reverse reaction barrier k r ;

[0105] In one embodiment of this application, the microscopic defect equation can be The forward reaction barrier is 1.92e-19, and the reverse reaction barrier is 1.03e-19. The interface state and the oxide charge are obtained through the above parameters and equations.

[0106] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention calculates the interface state and oxide charge by using micro defect equations and reaction barriers, so as to achieve both accurate simulation and solution of dose effect, i.e. radiation damage.

[0107] In this embodiment of the application, obtaining the oxygen vacancy defect based on the initial defect state parameters includes:

[0108] Based on the initial defect state parameters, the actual process state of the device is obtained;

[0109] The oxygen vacancy defect is obtained based on the actual process state of the device.

[0110] In this embodiment, the initial defect state parameter defines the oxygen vacancy defect. At the same time, the oxygen vacancy defect is defined according to the process state. Therefore, the oxygen vacancy defect is determined by the process state. Devices produced by different processes have different initial defect states, and therefore the corresponding oxygen vacancy defects are different.

[0111] The dose rate radiation damage simulation method based on the actual process state of the device of the present invention obtains the corresponding oxygen vacancy defects through the actual process state, and solves the problem of predicting and evaluating radiation damage under extremely low dose rate conditions.

[0112] Combination Figure 8 As shown, the present invention also provides a dose rate radiation damage simulation system 100 based on the actual process state of the device, comprising:

[0113] The acquisition unit 110 is used to acquire actual radiation damage parameters based on the actual process state of the device;

[0114] The information processing unit 120 is used to obtain the interface state and oxide charge based on the actual radiation damage parameters;

[0115] The construction unit 130 is used to construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual parameters of radiation damage.

[0116] In one embodiment of this application, the dose rate radiation damage simulation system 100 based on the actual process state of the device further includes: an application unit 140.

[0117] The information processing unit 120 is further configured to obtain the reaction barrier based on the initial defect state parameters, and to obtain the interface state and the oxide charge based on the reaction barrier and the microscopic defect equation.

[0118] The construction unit 130 is used to obtain the initial simulation model;

[0119] The construction unit 130 is used to input the irradiation dose rate parameter, the total irradiation dose parameter and the impurity concentration parameter into the initial simulation model, so that the initial simulation model outputs the reference interface state and the reference oxide charge;

[0120] The construction unit 130 is used to determine whether to end the training of the initial simulation model based on the comparison results of the output reference interface state and reference oxide charge with the experimental data curve; and to use the initial simulation model after the training is completed as the radiation damage simulation model.

[0121] The building unit 130 is further configured to acquire radiation damage experimental data and obtain the experimental data curve based on the radiation damage experimental data.

[0122] The construction unit 130 is further configured to obtain the charge curve of the actual interface state and the charge curve of the actual oxide based on the actual interface state and the actual oxide charge, and to obtain the experimental data curve based on the charge curve of the actual interface state and the charge curve of the actual oxide.

[0123] The construction unit 130 is further configured to: obtain the charge curve of the reference interface state and the charge curve of the reference oxide based on the reference interface state and the charge of the reference oxide; obtain the solution curve based on the charge curve of the reference interface state and the charge curve of the reference oxide; and terminate the training of the initial simulation model when the solution curve fits the experimental data curve.

[0124] The application unit 140 is used to input radiation damage simulation parameters into the radiation damage simulation model to obtain the simulated interface state and the simulated oxide charge, and to obtain the simulation result based on the simulated interface state and the simulated oxide charge.

[0125] The information processing unit 120 is further configured to obtain oxygen vacancy defects based on the initial defect state parameters; and to obtain the reaction barrier based on the oxygen vacancy defects; the reaction barrier includes a forward reaction barrier and a reverse reaction barrier.

[0126] The information processing unit 120 is further configured to obtain the actual process state of the device based on the initial defect state parameters; and to obtain the oxygen vacancy defect based on the actual process state of the device.

[0127] The dose rate radiation damage simulation system based on the actual process state of the device of the present invention obtains the interface state and oxide charge by autonomously adding microscopic reaction equations and reaction barriers, and conducts simulation training on them to obtain a radiation damage simulation model. Through the radiation damage simulation model, the interface state and oxide charge under different irradiation conditions can be quickly simulated to achieve accurate calculation of radiation damage to the device.

[0128] Combination Figure 9 As shown, the present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to perform the following steps:

[0129] S1: Obtain actual radiation damage parameters based on the actual process conditions of the device;

[0130] S2: Based on the actual parameters of the radiation damage, obtain the interface state and oxide charge;

[0131] S3: Construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters.

[0132] The computer device of the present invention obtains interface states and oxide charges by autonomously adding microscopic reaction equations and reaction barriers, and performs simulation training on them to obtain a radiation damage simulation model. Through the radiation damage simulation model, it can quickly simulate interface states and oxide charges under different irradiation conditions, and achieve accurate calculation of radiation damage to the device.

[0133] The present invention also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, performs the following steps:

[0134] S1: Obtain actual radiation damage parameters based on the actual process conditions of the device;

[0135] S2: Based on the actual parameters of the radiation damage, obtain the interface state and oxide charge;

[0136] S3: Construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters.

[0137] The computer-readable storage medium of the present invention obtains interface states and oxide charges by autonomously adding microscopic reaction equations and reaction barriers, and performs simulation training on them to obtain a radiation damage simulation model. Through the radiation damage simulation model, it is possible to quickly simulate interface states and oxide charges under different irradiation conditions, thereby achieving accurate calculation of radiation damage suffered by devices.

[0138] The computer-readable storage medium of the present invention, by training a link state prediction network and a reinforcement learning system and using them as an important part of error compensation, eliminates the errors caused by the flexible characteristics of the reducer to the joints during high-speed movement of the robotic arm, as well as the errors caused by the interaction of other joints connected in series with the joints. It performs feedback adjustment on the planned joint parameters, and finally achieves vibration suppression of robot joints under high-precision and high-speed working conditions.

[0139] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0140] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0141] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A dose rate radiation damage simulation method based on the actual process state of a device, characterized in that, include: Obtain actual radiation damage parameters based on the actual process conditions of the device; Based on the actual parameters of the radiation damage, the interface states and oxide charges are obtained; A radiation damage simulation model is constructed based on the interface state, the oxide charge, and the actual radiation damage parameters, which include: irradiation dose rate parameter, total irradiation dose parameter, and impurity concentration parameter. The step of constructing a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters specifically includes: Obtain an initial simulation model; input the irradiation dose rate parameter, the total irradiation dose parameter, and the impurity concentration parameter into the initial simulation model, so that the initial simulation model outputs a reference interface state and a reference oxide charge; based on the comparison results of the output reference interface state and the reference oxide charge with the experimental data curve, determine whether to end the training of the initial simulation model; use the initial simulation model after the training is completed as the radiation damage simulation model.

2. The method according to claim 1, characterized in that, The actual parameters of radiation damage include: initial defect state parameters, The step of obtaining the interface state and oxide charge based on the actual radiation damage parameters includes: The reaction barrier is obtained based on the initial defect state parameters; The interface state and the oxide charge are obtained based on the reaction barrier and micro-defect equation.

3. The method according to claim 1, characterized in that, Before determining whether to end the training of the initial simulation model, the method further includes: Obtain experimental data on radiation damage; The experimental data curve was obtained based on the radiation damage experimental data.

4. The method according to claim 3, characterized in that, The radiation damage experimental data include actual interface states and actual oxide charges. The process of obtaining the experimental data curve based on the radiation damage experimental data includes: Based on the actual interface state and the actual oxide charge, the charge curves of the actual interface state and the actual oxide are obtained. The experimental data curves are obtained based on the charge curves of the actual interface states and the actual oxides.

5. The method according to claim 1, characterized in that, After the initial simulation model outputs the reference interface state and reference oxide charge, the method further includes: Based on the reference interface state and the reference oxide charge, the charge curves of the reference interface state and the reference oxide are obtained. The solution curve is obtained based on the charge curve of the reference interface state and the charge curve of the reference oxide; Based on the comparison between the output reference interface state and reference oxide charge and the experimental data curve, determine whether to end the training of the initial simulation model, including: The training of the initial simulation model ends when the solution curve fits the experimental data curve.

6. The method according to claim 1, characterized in that, After constructing the radiation damage simulation model, the method further includes: The radiation damage simulation parameters are input into the radiation damage simulation model to obtain the simulated interface states and simulated oxide charges. The simulation results are obtained based on the simulated interface state and the simulated oxide charge.

7. The method according to claim 2, characterized in that, The step of obtaining the reaction barrier based on the initial defect state parameters includes: Based on the initial defect state parameters, oxygen vacancy defects are obtained; The reaction barrier is obtained based on the oxygen vacancy defect; The reaction barrier includes a forward reaction barrier and a reverse reaction barrier.

8. The method according to claim 7, characterized in that, The step of obtaining oxygen vacancy defects based on the initial defect state parameters includes: Based on the initial defect state parameters, the actual process state of the device is obtained; The oxygen vacancy defect is obtained based on the actual process state of the device.

9. A dose rate radiation damage simulation system based on the actual process state of a device, characterized in that, include: The acquisition unit is used to acquire actual radiation damage parameters based on the actual process conditions of the device; An information processing unit is used to obtain the interface state and oxide charge based on the actual radiation damage parameters; A construction unit is used to construct a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters, wherein the actual radiation damage parameters include: irradiation dose rate parameters, total irradiation dose parameters, and impurity concentration parameters. The step of constructing a radiation damage simulation model based on the interface state, the oxide charge, and the actual radiation damage parameters specifically includes: Obtain an initial simulation model; input the irradiation dose rate parameter, the total irradiation dose parameter, and the impurity concentration parameter into the initial simulation model, so that the initial simulation model outputs a reference interface state and a reference oxide charge; based on the comparison results of the output reference interface state and the reference oxide charge with the experimental data curve, determine whether to end the training of the initial simulation model; use the initial simulation model after the training is completed as the radiation damage simulation model.

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