Semiconductor device

Abstract

To obtain a semiconductor device capable of generating a micro power supply voltage. A first wiring (P) is connected to a switching element (6d-6f). The semiconductor module (1) has a second wiring (8) disposed adjacent to the first wiring (P) and generating an induced electromotive force in accordance with a change in current flowing through the first wiring (P), and a packaging material (9) that packages the switching element (6a-6f), the first wiring (P), and the second wiring (8). One end and the other end of the second wiring (8) are exposed from the packaging material (9). The semiconductor module (1) is mounted to a substrate (10). A GND electrode (11) of the substrate (10) is connected to one end of the second wiring (8). A diode (D1) rectifies the induced electromotive force output from the other end of the second wiring (8).

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] As a transfer-molded intelligent power module, there exists a power module with terminals that are floating at a potential (for example, see Patent Document 1). Figure 1 ).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2011-96696

[0004] In existing power modules, only one end of the floating terminal protrudes from the molding resin for connection to external devices. With such a terminal configuration, it is impossible to generate even a small power supply voltage. Summary of the Invention

[0005] The present invention was proposed to solve the above-mentioned problems, and its purpose is to obtain a semiconductor device capable of generating a small power supply voltage.

[0006] The semiconductor device of the present invention is characterized by comprising: a semiconductor module having a switching element, a first wiring, a second wiring, and a packaging material, wherein the first wiring is connected to the switching element, the second wiring is disposed adjacent to the first wiring, the second wiring generates an induced electromotive force according to a change in the current flowing through the first wiring, the packaging material encapsulates the switching element, the first wiring, and the second wiring, and one end and the other end of the second wiring are exposed from the packaging material; a substrate on which the semiconductor module is mounted, the substrate having a GND electrode connected to the first end; and a diode for rectifying the induced electromotive force output from the other end.

[0007] The effects of the invention

[0008] In this invention, within a semiconductor module, a second wiring is arranged adjacent to a first wiring connected to a switching element, and an induced electromotive force is generated based on changes in the current flowing through the first wiring. One end and the other end of the second wiring are exposed from the encapsulation material. A GND electrode of the substrate is connected to one end of the second wiring, and a diode rectifies the induced electromotive force output from the other end of the second wiring. This enables the generation of a small power supply voltage. Attached Figure Description

[0009] Figure 1 This is a diagram illustrating the semiconductor device involved in Embodiment 1.

[0010] Figure 2 This is a top view showing the semiconductor module involved in Embodiment 1.

[0011] Figure 3This is a circuit diagram of the semiconductor device involved in Embodiment 1.

[0012] Figure 4 This is a top view of the semiconductor device involved in Embodiment 1.

[0013] Figure 5 This is a diagram showing the three-phase output current of the motor and the output voltage after rectification by diodes.

[0014] Figure 6 This is a diagram illustrating a modified example of the semiconductor device according to Embodiment 1.

[0015] Figure 7 This is a diagram illustrating the semiconductor module involved in Embodiment 2.

[0016] Figure 8 This is a diagram illustrating the semiconductor module involved in Implementation Method 3.

[0017] Figure 9 This is a diagram illustrating the semiconductor device involved in Embodiment 4.

[0018] Figure 10 This is a diagram illustrating the semiconductor module involved in Implementation Method 5.

[0019] Figure 11 This is a diagram illustrating the semiconductor device involved in Embodiment 6.

[0020] Figure 12 This is a diagram illustrating the semiconductor module involved in Implementation Method 7.

[0021] Figure 13 This is a diagram illustrating the semiconductor device involved in Embodiment 7.

[0022] Figure 14 It is a diagram showing the distribution of the minute power supply voltage generated by the semiconductor module according to Embodiment 7.

[0023] Figure 15 This is a diagram illustrating a modified example of the semiconductor device according to Embodiment 7.

[0024] Figure 16 This is a diagram illustrating the semiconductor module involved in Implementation Method 8. Detailed Implementation

[0025] The semiconductor device according to the embodiments will be described with reference to the accompanying drawings. The same or corresponding structural elements are labeled with the same reference numerals, and sometimes repeated descriptions are omitted.

[0026] Implementation Method 1

[0027] Figure 1This diagram illustrates the semiconductor device according to Embodiment 1. Semiconductor module 1 is a three-phase inverter that drives motor 2. The P-terminal and N-terminal of semiconductor module 1 are connected to smoothing capacitor 5 via DC connection wiring 3 and 4.

[0028] Figure 2 This is a top view showing the semiconductor module according to Embodiment 1. Switching elements 6a to 6f are IGBTs or MOSFETs, etc. Switching elements 6a to 6c and diodes 7a to 7c are respectively mounted on the W terminal, V terminal, and U terminal. Switching elements 6d to 6f and diodes 7d to 7f are disposed on the P terminal. The NW terminal, NV terminal, NU terminal, W terminal, V terminal, U terminal, and P terminal are made of a flat plate of copper or the like.

[0029] The back electrodes of switching elements 6a-6c and diodes 7a-7c are connected to the W, V, and U terminals respectively via solder. The back electrodes of switching elements 6d-6f and diodes 7d-7f are connected to the P terminal via solder. The top surface electrodes of switching elements 6a-6f are connected to the top surface electrodes of diodes 7a-7f via wires. The top surface electrodes of diodes 7a-7f are connected to the NW, NV, NU, W, V, and U terminals via wires. The wires are made of Au or Al.

[0030] Wiring 8 is arranged adjacent to the straight portion of the P terminal without contacting it. Encapsulation material 9 encapsulates the switching elements 6a-6f, diodes 7a-7f, P terminal, and wiring 8. Encapsulation material 9 is a transfer resin such as epoxy resin or a gel such as silicone gel. The high-voltage P terminal and the low-voltage wiring 8 are insulated within the encapsulation material 9 and arranged with a short spatial distance. One end of the NW terminal, NV terminal, NU terminal, W terminal, V terminal, U terminal, and P terminal protrudes from the encapsulation material 9. Ends G1 and G2 of wiring 8 both protrude from the encapsulation material 9.

[0031] If switching elements 6d to 6f are turned on, current flows through terminal P, generating a magnetic flux around terminal P, which affects the wiring 8 located adjacent to terminal P. By switching elements 6d to 6f on and off, the current flowing through terminal P changes per unit time (di / dt). Due to mutual inductance, wiring 8 generates an induced electromotive force based on the change in current flowing through terminal P. The mutual inductance is determined by the proximity of terminal P and wiring 8.

[0032] Figure 3 This is a circuit diagram of the semiconductor device involved in Embodiment 1. Figure 4This is a top view showing the semiconductor device according to Embodiment 1. A semiconductor module 1 and a smoothing capacitor 5 are mounted on a substrate 10. The substrate 10 has a GND electrode 11. The NW, NV, and NU terminals are connected to one end of the smoothing capacitor 5 via wiring on the substrate 10, and the P terminal is connected to the other end of the smoothing capacitor 5. The W, V, and U terminals are led out to an output terminal block 12 for connection to a motor 2.

[0033] The end of the P terminal and the end G1 of the wiring 8 are exposed from the same side of the encapsulation material 9, while the end G2 of the wiring 8 is exposed from the other side of the encapsulation material 9. Therefore, the end G1 of the wiring 8 is positioned closer to the end of the P terminal than the end G2. Alternatively, the ends G1 and G2 of the wiring 8 may be exposed from the same side of the encapsulation material 9.

[0034] Terminal G1 of wiring 8 is connected to the GND electrode 11 of substrate 10. The anode of diode D1 is connected to terminal G2 of wiring 8. The cathode of diode D1 is connected to the load L. Capacitor C1 is connected between the cathode of diode D1 and the GND electrode 11. Diode D1 rectifies the induced electromotive force output from terminal G2 of wiring 8. Capacitor C1 stores the output power of diode D1. The power stored in capacitor C1 is supplied to the load L.

[0035] The power generated in this way can, for example, be used to generate the gate voltage that drives the switching elements 6a to 6f. Furthermore, in any power module where the switching elements, such as the DIPIPM, are integrated with the IC, this power can be used as the power supply voltage to operate the IC. Alternatively, it can be used as a power supply for external devices such as ICs or LEDs.

[0036] As explained above, in this embodiment, within the semiconductor module 1, wiring 8 is arranged adjacent to the P terminals connected to the switching elements 6d to 6f, and an induced electromotive force is generated based on changes in the current flowing through the P terminals. One end and the other end of wiring 8 are exposed from the encapsulation material 9. A GND electrode 11 of the substrate 10 is connected to one end of wiring 8, and diode D1 rectifies the induced electromotive force output from the other end of wiring 8. This allows the generation of a small power supply voltage.

[0037] Figure 5 This diagram shows the three-phase output current of the motor and the output voltage after rectification by the diodes. For example, with an inductance of 1uH at terminal P, an inductance of 1uH at wiring 8, and a coupling coefficient of 0.9, a small power supply voltage of 15V on average can be generated.

[0038] Figure 6This diagram illustrates a variation of the semiconductor device according to Embodiment 1. In contrast to Embodiment 1, a GND electrode 11 is connected to end G2 of the wiring 8, and a diode D1 is connected to end G1 of the wiring 8. The wiring 8 generates a small power supply voltage by utilizing the change in current over time during conduction or cutoff; therefore, even if the wiring 8 is connected in the opposite manner to Embodiment 1, a voltage can be generated as long as the orientation of the diode D1 is appropriate.

[0039] Implementation Method 2

[0040] Figure 7 This diagram illustrates the semiconductor module according to Embodiment 2. The structure, except for semiconductor module 1, is the same as in Embodiment 1. Wiring 8 has two wires 8a and 8b with different distances from the P terminal, both greater than or equal to these. End G1 of wire 8a is connected to the GND electrode 11, and end G2 of wire 8a is connected to the anode of diode D1. Similarly, end G3 of wire 8b is connected to the GND electrode 11, and end G4 of wire 8b is connected to the anode of the other diodes.

[0041] Wiring 8a is closest to terminal P, followed by wiring 8b. If the distance from terminal P is different, the mutual inductance changes. Therefore, wiring 8a has the highest mutual inductance, followed by wiring 8b. Thus, it is possible to change the type of minute power supply voltage, such as wiring 8a generating 15V and wiring 8b generating 5V, etc. In other words, it is possible to generate a number of minute power supply voltages corresponding to the number of wirings.

[0042] Implementation Method 3

[0043] Figure 8 This diagram illustrates the semiconductor module involved in Embodiment 3. The structure, except for the semiconductor module 1, is the same as in Embodiment 1. Wiring 8 includes an inductor 13. By adjusting the switching speed (di / dt) of the switching elements 6d to 6f and the number of turns of the inductor 13, the linkage flux can be adjusted to obtain the desired voltage. Other structures and effects are the same as in Embodiment 1.

[0044] Implementation Method 4

[0045] Figure 9 This diagram illustrates the semiconductor device according to Embodiment 4. In this embodiment, the energy storage capacitor C1 of Embodiment 1 is replaced by a storage battery 14. The storage battery 14 is, for example, a reusable battery such as a lithium-ion battery or a solid-state battery. The storage battery 14 can store the induced electromotive force generated in the wiring 8 of the semiconductor module 1. Furthermore, since initial energy storage is not required, a startup power supply circuit is not needed, nor is a DC / DC circuit for controlling the power supply required.

[0046] Implementation Method 5

[0047] Figure 10 This diagram illustrates the semiconductor module according to Embodiment 5. The anti-reverse current diode D1 is disposed inside the semiconductor module 1. Inside the semiconductor module 1, the wiring 8 is divided into two parts: one part is connected to the lower surface electrode of the diode D1, and the other part is connected to the upper surface electrode of the diode D1 via a wire connection. By disposing of the diode D1 inside the module, the number and area of ​​external components can be reduced, achieving space-saving circuitry. Other structures and effects are the same as in Embodiment 1.

[0048] Implementation Method 6

[0049] Figure 11 This diagram illustrates the semiconductor device according to Embodiment 6. In Embodiment 1, the end G1 of the wiring 8 is connected to the GND electrode 11 on the control side, which is connected to the capacitor C1. However, in this embodiment, it is connected to the GND electrode 15 on the power side, which is connected to the negative terminals NW, NV, and NU of the semiconductor module 1. Thus, the wiring 8 can be connected to either the GND electrode 11 on the control side or the GND electrode 15 on the power side, providing a high degree of design flexibility.

[0050] Implementation Method 7

[0051] Figure 12 This is a diagram illustrating the semiconductor module involved in Implementation Method 7. Figure 13 This diagram illustrates the semiconductor device according to Embodiment 7. Wiring 16 is arranged in a "コ" shape between the NW terminal and the NV terminal. Both ends G5 and G6 of wiring 16 are exposed from the encapsulation material 9. Wiring 16 generates an induced electromotive force based on changes in the current flowing through the NW and NV terminals. Similar to wiring 8, end G6 of wiring 16 is connected to the GND electrode 11, and end G5 of wiring 16 is connected to the anode of diode D2. Capacitor C2 stores the output power of diode D2.

[0052] By utilizing the changes in current over time when the NW terminal is turned on and the changes in current over time when the NV terminal is turned off, or vice versa, wiring 16 generates an induced electromotive force.

[0053] Figure 14This is a diagram showing the distribution of the minute power supply voltage generated by the semiconductor module according to Embodiment 7. The wiring 8 adjacent to the P terminal generates a minute voltage by utilizing the time-varying current of all three phases (U, V, and W) modulated by a three-phase sinusoidal wave during conduction or cutoff. On the other hand, wiring 16 generates an induced electromotive force using only two of the three N terminals. Therefore, the induced electromotive force of wiring 16 can be varied by potential changes. Thus, the average voltage of the induced electromotive force of wiring 16 is 2 / 3 of the average voltage of the induced electromotive force of wiring 8. Other structures and effects are the same as in Embodiment 1.

[0054] Figure 15 This diagram illustrates a variation of the semiconductor device according to Embodiment 7. Wiring 16 is arranged in a "ko" shape between the NV terminal and the NU terminal. In this case, the effects of Embodiment 7 can also be achieved. Alternatively, wiring 16 can be arranged to the left of the NW terminal. In this case, wiring 16 does not need to be arranged in a "ko" shape, but rather in an L-shape, similar to wiring 8.

[0055] Implementation Method 8

[0056] Figure 16 This diagram illustrates the semiconductor module according to Embodiment 8. Not only wiring 16, but also wiring 17 is arranged in a "コ" shape between the NV terminal and the NU terminal. Both ends G7 and G8 of wiring 17 are exposed from the encapsulation material 9. Wiring 17 generates an induced electromotive force based on changes in the current flowing through the NV terminal and the NU terminal. Similar to wirings 8 and 16, one end of wiring 17 is connected to the GND electrode 11, and the other end of wiring 17 is connected to a diode. Thus, an induced electromotive force can be generated from two locations on the N terminal side. Other structures and effects are the same as in Embodiment 7.

[0057] As described above, the wiring that generates the induced electromotive force is arranged adjacent to the P terminal in Embodiment 1, and adjacent to the NW terminal, NV terminal, or NU terminal in Embodiments 7 and 8. That is, the wiring is arranged adjacent to the positive or negative terminal of the semiconductor module. However, it is not limited to this arrangement; the wiring may also be arranged adjacent to the U terminal, V terminal, or W terminal that outputs the three-phase sinusoidal modulated current.

[0058] Furthermore, the switching elements 6a-6f and diodes 7a-7f are not limited to being formed of silicon, but can also be formed of wide-bandgap semiconductors with a larger bandgap compared to silicon. Wide-bandgap semiconductors are, for example, silicon carbide, gallium nitride-based materials, or diamond.

[0059] Devices made of wide-bandgap semiconductors can switch on and off at high speeds. Therefore, even with the same mutual inductance, the change in magnetic flux over time increases, resulting in a higher induced electromotive force. Consequently, compared to using low-speed switching devices made of silicon, the lengths of wiring 8, 16, and 17 can be shortened, enabling miniaturization.

[0060] Furthermore, semiconductor chips formed from wide-bandgap semiconductors have high voltage withstand capability and allowable current density, enabling miniaturization. By using this miniaturized semiconductor chip, semiconductor devices assembled with it can also be miniaturized and highly integrated. Additionally, due to the high heat resistance of the semiconductor chip, the heat sink fins can be miniaturized, allowing for air cooling of the water-cooling section, thus further miniaturizing the semiconductor device. Moreover, the low power loss and high efficiency of the semiconductor chip enable high-efficiency semiconductor devices. Furthermore, it is preferable that both switching elements 6a-6f and diodes 7a-7f are formed from wide-bandgap semiconductors, but it is also possible for only one of them to be formed from a wide-bandgap semiconductor, achieving the effects described in the above embodiments.

[0061] Explanation of the label

[0062] 1. Semiconductor module; 6a-6f switching elements; 8, 8a, 8b wiring (second wiring); 9. Packaging material; 10. Substrate; 11, 15. GND electrodes; 13. Inductor; 14. Battery; C1 capacitor; D1 diode; P terminal (first wiring).

Claims

1. A semiconductor device, characterized in that, have: A semiconductor module has a switching element, a first wiring, a second wiring, and a packaging material. The first wiring is connected to the switching element, and the second wiring is arranged adjacent to the first wiring. The second wiring generates an induced electromotive force according to the change in current flowing through the first wiring. The packaging material encapsulates the switching element, the first wiring, and the second wiring, with one end and the other end of the second wiring exposed from the packaging material. A substrate on which the semiconductor module is mounted, the substrate having a GND electrode connected to one end; as well as A diode that rectifies the induced electromotive force output from the other end.

2. The semiconductor device according to claim 1, characterized in that, The first wiring is either the positive or negative terminal of the semiconductor module.

3. The semiconductor device according to claim 1, characterized in that, The second wiring has two or more wirings at different distances from the first wiring.

4. The semiconductor device according to claim 2, characterized in that, The second wiring has two or more wirings at different distances from the first wiring.

5. The semiconductor device according to claim 1, characterized in that, The second wiring has an inductor.

6. The semiconductor device according to claim 2, characterized in that, The second wiring has an inductor.

7. The semiconductor device according to claim 3, characterized in that, The second wiring has an inductor.

8. The semiconductor device according to claim 4, characterized in that, The second wiring has an inductor.

9. The semiconductor device according to any one of claims 1 to 8, characterized in that, It also has a capacitor that stores the output power of the diode.

10. The semiconductor device according to any one of claims 1 to 8, characterized in that, It also has a storage battery that stores the output power of the diode.

11. The semiconductor device according to any one of claims 1 to 8, characterized in that, The diode is located inside the semiconductor module.

12. The semiconductor device according to claim 9, characterized in that, The diode is located inside the semiconductor module.

13. The semiconductor device according to claim 10, characterized in that, The diode is located inside the semiconductor module.

14. The semiconductor device according to claim 9, characterized in that, The GND electrode is the control-side GND electrode connected to the capacitor.

15. The semiconductor device according to any one of claims 1 to 8, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

16. The semiconductor device according to claim 9, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

17. The semiconductor device according to claim 10, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

18. The semiconductor device according to claim 11, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

19. The semiconductor device according to claim 12, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

20. The semiconductor device according to claim 13, characterized in that, The GND electrode is the power-side GND electrode connected to the negative terminal of the semiconductor module.

21. The semiconductor device according to any one of claims 1 to 8, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

22. The semiconductor device according to claim 9, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

23. The semiconductor device according to claim 10, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

24. The semiconductor device according to claim 11, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

25. The semiconductor device according to claim 12, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

26. The semiconductor device according to claim 13, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

27. The semiconductor device according to claim 14, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

28. The semiconductor device according to claim 15, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

29. The semiconductor device according to claim 16, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

30. The semiconductor device according to claim 17, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

31. The semiconductor device according to claim 18, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

32. The semiconductor device according to claim 19, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

33. The semiconductor device according to claim 20, characterized in that, The switching element is formed of a wide-bandgap semiconductor.

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