Liquid crystal panel, method of manufacturing the same, and display device

Abstract

The application discloses a liquid crystal panel and a manufacturing method thereof and a display device, and belongs to the technical field of display. The liquid crystal panel comprises a light filtering structure, opposite first and second substrates, a liquid crystal layer and a thin film transistor between the first and second substrates. The thin film transistor comprises an active layer, and the active layer comprises a channel region. A normal projection of the light filtering structure on a plane where the first substrate is located covers a normal projection of at least part of the channel region on the plane where the first substrate is located. The light filtering structure is used for filtering light in at least one sub-wave band in a visible light wave band, and the at least one sub-wave band comprises a wave band affecting the position of a Fermi level of the active layer of the thin film transistor. The application can avoid the light irradiated to the at least part of the channel region of the active layer from affecting the position of the Fermi level of the active layer, thereby avoiding the light irradiated to the thin film transistor from affecting the switching characteristic of the thin film transistor, helping to prolong the service life of the thin film transistor, and prolonging the service life of the liquid crystal panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a liquid crystal panel, a manufacturing method thereof and a display device. BACKGROUND

[0002] The light energy liquid crystal erasing and writing device is a simple device integrating writing and display, which can realize writing and drawing, and is favored by the majority of users.

[0003] The main component of the light energy liquid crystal erasing and writing device is a light energy liquid crystal panel. At present, the light energy liquid crystal panel includes two opposite substrates and a bistable liquid crystal (Cholesteric Liquid Crystals, CLC) and a thin film transistor between the two substrates. The CLC has two stable states, P state (Planar Texture) and FC state (Focal Conic Texture), which can be maintained without applying voltage. When the CLC is in the P state, it can reflect specific color light, so that the light energy liquid crystal panel presents the writing traces, and the light energy liquid crystal panel is in the writing state. When the CLC is in the FC state, it can scatter the light incident into the CLC, and the light energy liquid crystal panel displays the background color, and the light energy liquid crystal panel is in the initial state. SUMMARY

[0004] The embodiment of the present application provides a liquid crystal panel, a manufacturing method thereof and a display device, which can prolong the service life of the liquid crystal panel. The technical scheme is as follows:

[0005] In a first aspect, a liquid crystal panel is provided, which includes:

[0006] a light filtering structure, opposite first and second substrates, and a liquid crystal layer and a thin film transistor between the first and second substrates.

[0007] The liquid crystal in the liquid crystal layer has at least two stable states, the liquid crystal in the first stable state can reflect light of a target color in light incident on the liquid crystal, and the liquid crystal in the second stable state can scatter light incident on the liquid crystal.

[0008] The thin film transistor includes an active layer, the active layer includes a channel region, the light filtering structure covers at least part of the channel region in the first substrate in the orthogonal projection in the first substrate, the light filtering structure is used for filtering out light of at least one sub-band in the visible light band, and transmitting light of sub-band other than the at least one sub-band in the visible light band, and the at least one sub-band includes a band affecting the position of the Fermi level of the active layer.

[0009] Optionally, the light filtering structure completely covers the projection of the channel region on the plane of the first substrate.

[0010] Optionally, the light filtering structure completely covers the projection of the channel region on the plane of the first substrate.

[0011] Optionally, the material of the active layer comprises amorphous silicon, and the at least one sub-band comprises 600-650 nm.

[0012] Optionally, the liquid crystal in the liquid crystal layer is bistable liquid crystal.

[0013] Optionally, the thin film transistor is a bottom-gate thin film transistor, and the light filtering structure is located between the thin film transistor and the liquid crystal layer.

[0014] Optionally, the thin film transistor is a top-gate thin film transistor, and the light filtering structure is located on the side of the thin film transistor away from the liquid crystal layer.

[0015] Optionally, the thin film transistor is a bottom-gate thin film transistor, and the light filtering structure is located on the side of the liquid crystal layer away from the thin film transistor.

[0016] Optionally, the liquid crystal panel further comprises: a conductive film located on the side of the second substrate close to the liquid crystal layer, and the light filtering structure is located on the side of the conductive film away from the second substrate, or the light filtering structure is located between the conductive film and the second substrate.

[0017] Optionally, the light filtering structure and the conductive film are arranged in a stack; or the light filtering structure is inlaid in the conductive film.

[0018] Optionally, the liquid crystal panel further comprises: a conductive film located on the side of the second substrate close to the liquid crystal layer.

[0019] Optionally, the liquid crystal panel further comprises: a pixel electrode; the pixel electrode and the thin film transistor are both located between the first substrate and the liquid crystal layer, and the pixel electrode is electrically connected to the drain of the thin film transistor.

[0020] Optionally, the liquid crystal panel further comprises: a gate line and a data line, the gate line and the data line define a pixel region, the thin film transistor is located in the pixel region, the gate of the thin film transistor is electrically connected to the gate line, and the source of the thin film transistor is electrically connected to the data line.

[0021] Optionally, the thin film transistor comprises an active layer, a gate, a source and a drain, the active layer comprises a first contact region in contact with the source and a second contact region in contact with the drain, and the channel region is a part of the active layer between the first contact region and the second contact region.

[0022] Optionally, one of the first substrate and the second substrate is a light-blocking substrate, and the other is a light-transmitting substrate.

[0023] Optionally, the light-transmitting substrate is a flexible substrate.

[0024] In a second aspect, a manufacturing method of a liquid crystal panel is provided, the method comprising:

[0025] forming a first substrate and a second substrate;

[0026] disposing the first substrate and the second substrate oppositely to obtain a liquid crystal panel, the liquid crystal panel further comprising a filter structure, a liquid crystal layer and a thin film transistor between the first substrate and the second substrate;

[0027] the liquid crystal in the liquid crystal layer has at least two stable states, the liquid crystal in the liquid crystal layer is capable of reflecting light of a target color in light rays directed to the liquid crystal when the liquid crystal is in a first stable state, and the liquid crystal in the liquid crystal layer is capable of scattering light rays directed to the liquid crystal when the liquid crystal is in a second stable state;

[0028] the thin film transistor comprises an active layer, the active layer comprises a channel region, a normal projection of the filter structure in a plane in which the first substrate is located covers at least part of a normal projection of the channel region in the plane in which the first substrate is located, the filter structure is configured to filter out light of at least one sub-band in a visible light band and transmit light of sub-bands in the visible light band other than the at least one sub-band, and the at least one sub-band comprises a band affecting a position of a Fermi level of the active layer.

[0029] Optionally, the method further comprises: forming the thin film transistor and the filter structure on the first substrate, the filter structure is located on a side of the thin film transistor away from the first substrate, or the filter structure and the thin film transistor are located on two sides of the first substrate.

[0030] Optionally, the method further comprises:

[0031] forming the thin film transistor on the first substrate;

[0032] forming the filter structure on the second substrate.

[0033] In a third aspect, a display device is provided, and the display device comprises the liquid crystal panel of the first aspect or any possible implementation manner of the first aspect.

[0034] The technical scheme provided in the application has at least the following beneficial effects:

[0035] In the liquid crystal panel provided in the application, the orthographic projection of the light filtering structure in the plane of the first substrate covers the orthographic projection of at least part of the channel region of the thin film transistor in the plane of the first substrate, and the light filtering structure can filter out light in at least one sub-band of the visible light band, and the at least one sub-band includes a band affecting the position of the Fermi level of the active layer of the thin film transistor, so that the light in the band affecting the position of the Fermi level of the active layer of the thin film transistor can be prevented from irradiating at least part of the channel region of the active layer, which helps to prolong the service life of the thin film transistor, thereby prolonging the service life of the liquid crystal panel.

[0036] In addition, the light filtering structure can transmit light in a sub-band of the visible light band other than the at least one sub-band, and the light transmitted by the light filtering structure can irradiate the active layer of the thin film transistor, so that the active layer generates carriers, thereby enabling the thin film transistor to drive the liquid crystal deflection to realize erasing of handwriting written on the liquid crystal panel, so that when the liquid crystal panel is a light energy liquid crystal panel, the light energy erasing function can be realized. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical scheme in the embodiments of the application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0038] Figure 1 is a structural schematic diagram of a liquid crystal panel provided by an embodiment of the application;

[0039] Figure 2 is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the application;

[0040] Figure 3 is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the application;

[0041] Figure 4 is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the application;

[0042] Figure 5 is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the application;

[0043] Figure 6is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the present application;

[0044] Figure 7 is a structural schematic diagram of another liquid crystal panel provided by an embodiment of the present application;

[0045] Figure 8 is a front view of a first substrate provided by an embodiment of the present application;

[0046] Figure 9 is a front view of a second substrate provided by an embodiment of the present application;

[0047] Figure 10 is an equivalent circuit diagram of a first substrate provided by an embodiment of the present application;

[0048] Figure 11 is an equivalent circuit diagram of a liquid crystal panel provided by an embodiment of the present application;

[0049] Figure 12 is a characteristic curve diagram of a thin film transistor provided by an embodiment of the present application;

[0050] Figure 13 is a characteristic curve diagram of another thin film transistor provided by an embodiment of the present application;

[0051] Figure 14 is a flow chart of a manufacturing method of a liquid crystal panel provided by an embodiment of the present application;

[0052] Figure 15 is a flow chart of another manufacturing method of a liquid crystal panel provided by an embodiment of the present application;

[0053] Figure 16 is a schematic diagram after forming a thin film transistor on a first substrate provided by an embodiment of the present application;

[0054] Figure 17 is a schematic diagram after forming an insulating structure layer on a side of the thin film transistor away from the first substrate provided by an embodiment of the present application;

[0055] Figure 18 is a schematic diagram after forming a pixel electrode on a side of the insulating structure layer away from the first substrate provided by an embodiment of the present application;

[0056] Figure 19 is a schematic diagram after forming a conductive film on a second substrate provided by an embodiment of the present application;

[0057] Figure 20 is a schematic diagram after forming a filter structure on a side of the conductive film away from the second substrate provided by an embodiment of the present application.

[0058] The specific embodiments of the present application have been shown by the above drawings, and will be described in more detail hereinafter. These drawings and detailed description are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solutions and advantages of the present application more clear, the embodiments of the present application will be described in more detail hereinafter with reference to the drawings.

[0060] The light energy liquid crystal erasing and writing device is a simple device integrating writing and display, which can realize writing and drawing. Since the handwriting displayed on the light energy liquid crystal erasing and writing device is clear, and no dust is generated during writing and erasing, the light energy liquid crystal erasing and writing device can replace the traditional blackboard.

[0061] The main component in the light energy liquid crystal erasing and writing device is a light energy liquid crystal panel. At present, the light energy liquid crystal panel includes two opposite substrates and a CLC and a thin film transistor between the two substrates. The CLC has two stable states, i.e. P state and FC state, which can be maintained without applying voltage. When the CLC is in the P state, it can reflect specific color light so that the light energy liquid crystal panel presents the handwriting, and the light energy liquid crystal panel is in the writing state. When the CLC is in the FC state, it can scatter the light entering the CLC, and the light energy liquid crystal panel displays the background color, and the light energy liquid crystal panel is in the initial state. The thin film transistor is used to control the deflection of the CLC. For example, under the action of light, the active layer in the thin film transistor generates carriers to turn on the thin film transistor, drive the CLC to deflect from the P state to the FC state, and realize erasing the handwriting written on the light energy liquid crystal panel.

[0062] However, some wavelengths of light can easily affect the position of the Fermi level of the active layer of the thin film transistor, increase the band gap width of the active layer, increase the difficulty of exciting the valence electrons in the active layer from the valence band to the conduction band, reduce the concentration of intrinsic carriers of the active layer, reduce the conductivity of the active layer, increase the opening voltage of the channel region of the active layer, and thus require a higher opening voltage to turn on the thin film transistor. That is, some wavelengths of light increase the opening voltage (i.e. threshold voltage) of the thin film transistor, affecting the switching characteristics of the thin film transistor. If the active layer of the thin film transistor is irradiated by light of these wavelengths for a long time, the service life of the thin film transistor will be attenuated, and thus the service life of the light energy liquid crystal panel will be attenuated.

[0063] In view of the above problems of the current light energy liquid crystal panel, the embodiment of the present application provides a liquid crystal panel and a manufacturing method thereof, and a display device. The liquid crystal panel can be a light energy liquid crystal panel. The liquid crystal panel comprises a light filtering structure and a thin film transistor, the thin film transistor comprises an active layer, the active layer comprises a channel region, and the light filtering structure covers at least part of the channel region in the orthographic projection of the first substrate in the plane of the first substrate. The light filtering structure is used to filter out light in at least one sub-band of the visible light band, and the at least one sub-band comprises a band affecting the position of the Fermi level of the active layer of the thin film transistor. Since the light filtering structure covers at least part of the channel region in the orthographic projection of the first substrate in the plane of the first substrate, and the light filtering structure can filter out light in the band affecting the position of the Fermi level of the active layer of the thin film transistor, the light irradiated to the active layer can affect the position of the Fermi level of the active layer, thereby avoiding the light irradiated to the thin film transistor affecting the switching characteristics of the thin film transistor, which helps to prolong the service life of the thin film transistor, thereby prolonging the service life of the liquid crystal panel comprising the thin film transistor. The technical solutions of the embodiment of the present application are described below with reference to the drawings.

[0064] Figure 1 FIG. 1 is a structural schematic diagram of a liquid crystal panel provided by the embodiment of the present application. Please refer to Figure 1 The liquid crystal panel comprises a light filtering structure 01, a first substrate 02 and a second substrate 03 arranged oppositely, and a liquid crystal layer 04 and a thin film transistor 05 between the first substrate 02 and the second substrate 03.

[0065] The liquid crystal in the liquid crystal layer 04 has at least two stable states, and the liquid crystal in the liquid crystal layer 04 can reflect light of a target color in the light irradiated to the liquid crystal when the liquid crystal is in a first stable state, and the liquid crystal in the liquid crystal layer 04 can scatter the light irradiated to the liquid crystal when the liquid crystal is in a second stable state.

[0066] The thin film transistor 05 comprises an active layer 051, the active layer 051 comprises a channel region Q, the light filtering structure 01 covers at least part of the channel region Q in the orthographic projection of the first substrate 02 in the plane of the first substrate 02, and the light filtering structure 01 is used to filter out light in at least one sub-band of the visible light band and transmit light in the sub-band of the visible light band except the at least one sub-band, and the at least one sub-band comprises a band affecting the position of the Fermi level of the active layer 051 of the thin film transistor 05.

[0067] In summary, the liquid crystal panel provided by the embodiments of the present application can avoid the light in the wave band affecting the position of the Fermi level of the active layer of the thin film transistor from irradiating at least part of the channel region of the active layer, help prolong the service life of the thin film transistor, and thus prolong the service life of the liquid crystal panel.

[0068] In addition, the light filtering structure can transmit the light in the wave band of the visible light except the at least one sub-wave band, and the light transmitted by the light filtering structure can irradiate the active layer of the thin film transistor, so that the active layer generates carriers, and thus the thin film transistor drives the liquid crystal deflection to realize the erasing of the handwriting written on the liquid crystal panel, and thus when the liquid crystal panel is a light energy liquid crystal panel, the light energy erasing function can be realized.

[0069] Optionally, the orthogonal projection of the light filtering structure 01 on the plane of the first substrate 02 completely covers the orthogonal projection of the channel region Q on the plane of the first substrate 02. In this way, on the one hand, the light in the wave band affecting the position of the Fermi level of the active layer 051 of the thin film transistor 05 can be avoided from irradiating the entire channel region of the active layer 051. On the other hand, the area of the light filtering structure 01 can be larger, which is convenient for the preparation of the light filtering structure 01.

[0070] Optionally, the orthogonal projection of the light filtering structure 01 on the plane of the first substrate 02 covers the orthogonal projection of the active layer 051 on the plane of the first substrate 02. In this way, on the one hand, the light in the wave band affecting the position of the Fermi level of the active layer 051 of the thin film transistor 05 can be avoided from irradiating the active layer 051. On the other hand, compared with the case that the orthogonal projection of the light filtering structure 01 on the plane of the first substrate 02 completely covers the orthogonal projection of the channel region Q on the plane of the first substrate 02, when the orthogonal projection of the light filtering structure 01 on the plane of the first substrate 02 covers the orthogonal projection of the active layer 051 on the plane of the first substrate 02, the area of the light filtering structure 01 can be larger, which is more convenient for the preparation of the light filtering structure 01.

[0071] Optionally, the orthogonal projection of the light filtering structure 01 on the plane where the first substrate 02 is located covers the orthogonal projection of the thin film transistor 05 on the plane where the first substrate 02 is located. Compared with the case that the orthogonal projection of the light filtering structure 01 on the plane where the first substrate 02 is located covers the orthogonal projection of the active layer 051 on the plane where the first substrate 02 is located, when the orthogonal projection of the light filtering structure 01 on the plane where the first substrate 02 is located covers the orthogonal projection of the thin film transistor 05 on the plane where the first substrate 02 is located, the area of the light filtering structure 01 is larger, which is convenient for the preparation of the light filtering structure 01.

[0072] Optionally, the liquid crystal in the liquid crystal layer 04 is a bistable liquid crystal. The bistable liquid crystal has two stable states, which are P state and FC state respectively. The bistable liquid crystal can maintain the P state and the FC state without voltage. The bistable liquid crystal can reflect light of a specific color (for example, green light) when it is in the P state, and can scatter light when it is in the FC state. When the liquid crystal in the liquid crystal layer 04 is a bistable liquid crystal, the first stable state can be the P state, the second stable state can be the FC state, and the light of the target color can be green light.

[0073] The visible light wave band refers to the wave band of light that can be perceived by the human eye in the electromagnetic wave spectrum. The visible light wave band is usually 380-780 nanometers. The active layer in the thin film transistor can usually be an amorphous silicon (a-Si) active layer or an oxide active layer. It is found through experiments that light of 600-650 nanometers has a greater impact on the position of the Fermi level of the a-Si active layer. Therefore, in the embodiments of the present application, when the active layer 051 is an a-Si active layer, the light filtering structure 01 filters out light of at least one sub-wave band, which includes light of 600-650 nanometers. For example, the light filtering structure 01 is used to filter out light of 625 nanometers. The material of the a-Si active layer is a-Si, and the material of the oxide active layer is a semiconductor oxide, such as indium tin zinc oxide (ITZO) or indium gallium zinc oxide (IGZO) and the like.

[0074] In the embodiments of the present application, one of the first substrate 02 and the second substrate 03 is a light-shielding substrate, and the other is a light-transmitting substrate. The thin film transistor can be a bottom-gate thin film transistor or a top-gate thin film transistor. Depending on the type of the thin film transistor, the positional relationship between the light filtering structure and the thin film transistor is different, and the selection of the first substrate 02 and the second substrate 03 is different. The structure of the liquid crystal panel is introduced below according to the different types of the thin film transistor.

[0075] Case 1: The thin film transistor is a bottom-gate thin film transistor, and the light filtering structure is located between the thin film transistor and the liquid crystal layer. Optionally, the first substrate is a light-shielding substrate, and the second substrate is a light-transmitting substrate.

[0076] Optionally, both the filter structure and the thin-film transistor are located on the first substrate, and both the filter structure and the thin-film transistor are located on the side of the first substrate closer to the liquid crystal layer (i.e., the filter structure and the thin-film transistor are located on the same side of the first substrate), and the filter structure is located on the side of the thin-film transistor closer to the liquid crystal layer.

[0077] like Figure 1 As shown, the thin-film transistor 05 is a bottom-gate type thin-film transistor. The thin-film transistor 05 includes: a gate 052, a gate insulating layer 053, an active layer 051, an inter-layer dielectric (ILD) layer 054, and a source / drain layer, sequentially distributed along a direction away from the first substrate 02. The source / drain layer includes a source 055 and a drain 056, and the active layer 051 includes a first contact region that contacts the source 055. Figure 1 (not shown in the image) and the second contact area that contacts the drain electrode 056 (not shown in the image) Figure 1 (Not shown in the diagram), the channel region Q of the active layer 051 is the portion of the active layer 051 located between the first contact region and the second contact region. The filter structure 01 is located between the thin-film transistor 05 and the liquid crystal layer 04. The orthographic projection of the filter structure 01 onto the plane of the first substrate 02 covers the orthographic projection of the active layer 051 onto the plane of the first substrate 02, thus the orthographic projection of the filter structure 01 onto the plane of the first substrate 02 covers the orthographic projection of the channel region Q onto the plane of the first substrate 02. Both the thin-film transistor 05 and the filter structure 01 are located on the first substrate 02, and both are located on the side of the first substrate 02 closest to the liquid crystal layer 04.

[0078] Case 2: The thin-film transistor is a top-gate type, and the light-filtering structure is located on the side of the thin-film transistor away from the liquid crystal layer. Optionally, the first substrate is a light-transmitting substrate, and the second substrate is a light-shielding substrate.

[0079] Optionally, both the filter structure and the thin-film transistor are located on the first substrate. The filter structure and the thin-film transistor can be located on the same side of the first substrate or on opposite sides of the first substrate.

[0080] Example, Figure 2 and Figure 3 These are schematic diagrams of two other liquid crystal panels provided in the embodiments of this application. For example... Figure 2 and Figure 3As shown, the thin film transistor 05 is a top-gate thin film transistor, and the thin film transistor 05 includes, in sequence along a direction away from the first substrate 02, an active layer 051, a gate insulating layer 053, a gate electrode 052, an interlayer dielectric layer 054, and a source-drain electrode layer. The source-drain electrode layer includes a source electrode 055 and a drain electrode 056, the active layer 051 includes a first contact region in contact with the source electrode 055 and a second contact region in contact with the drain electrode 056, and a channel region Q of the active layer 051 is a portion of the active layer 051 between the first contact region and the second contact region. A normal projection of the light filtering structure 01 on a plane in which the first substrate 02 is located covers a normal projection of the active layer 051 on the plane in which the first substrate 02 is located, so that a normal projection of the channel region Q on the plane in which the first substrate 02 is located is covered by a normal projection of the light filtering structure 01 on the plane in which the first substrate 02 is located. The thin film transistor 05 and the light filtering structure 01 are both located on the first substrate 02. As shown in FIG. 1a, Figure 2 As shown, the light filtering structure 01 and the thin film transistor 05 are located on the same side of the first substrate 02, and the light filtering structure 01 is located between the thin film transistor 05 and the first substrate 02. Alternatively, as shown in FIG. 1b, Figure 3 As shown, the light filtering structure 01 and the thin film transistor 05 are located on two sides of the first substrate 02.

[0081] Case 3: The thin film transistor is a bottom-gate thin film transistor, and the light filtering structure is located on a side of the liquid crystal layer away from the thin film transistor. Optionally, the first substrate is a light-shielding substrate, and the second substrate is a light-transmitting substrate.

[0082] Optionally, the thin film transistor is located on the first substrate, and the thin film transistor is located between the first substrate and the liquid crystal layer. The light filtering structure is located on the second substrate, and the light filtering structure is located between the second substrate and the liquid crystal layer, or the light filtering structure is located on a side of the second substrate away from the liquid crystal layer.

[0083] As shown in FIG. 1c, Figures 4 to 7 are structure diagrams of another four liquid crystal panels provided by the embodiments of the present application. As shown in FIG. 1d, Figures 4 to 7As shown, the thin-film transistor 05 is a bottom-gate type thin-film transistor. The thin-film transistor 05 includes: a gate 052, a gate insulating layer 053, an active layer 051, an interlayer dielectric layer 054, and a source / drain layer, sequentially distributed along a direction away from the first substrate 02. The source / drain layer includes a source electrode 055 and a drain electrode 056. The active layer 051 includes a first contact region contacting the source electrode 055 and a second contact region contacting the drain electrode 056. The channel region Q of the active layer 051 is the portion of the active layer 051 located between the first and second contact regions. The filter structure 01 is located on the side of the liquid crystal layer 04 away from the thin-film transistor 05. The orthographic projection of the filter structure 01 onto the plane of the first substrate 02 covers the orthographic projection of the active layer 051 onto the plane of the first substrate 02, thus covering the orthographic projection of the channel region Q onto the plane of the first substrate 02. The thin-film transistor 05 is located on the first substrate 02, and the filter structure 01 is located on the second substrate 03. Figures 4 to 6 As shown, the filter structure 01 is located between the second substrate 03 and the liquid crystal layer 04. Figure 7 As shown, the filter structure 01 is located on the side of the second substrate 03 away from the liquid crystal layer 04.

[0084] like Figures 4 to 7 As shown, the example illustrates a bottom-gate thin-film transistor (TFT) with the thin-film transistor located on the first substrate and the filter structure located on the second substrate. In practical applications, when the TFT is located on the first substrate and the filter structure is located on the second substrate, the TFT can also be a top-gate TFT; this embodiment does not limit this.

[0085] In this embodiment, both the first contact region on the active layer 051 that contacts the source electrode 055 and the second contact region that contacts the drain electrode 056 can be ohmic contact regions, and both the first and second contact regions can include ohmic contact structures (for simplicity). Figures 1 to 7 (not shown in the image), the material of the ohmic contact structure can be n+a-Si, where n+a-Si is a doped a-Si.

[0086] In the embodiments of the present application, the side of the light-transmitting substrate in the first substrate and the second substrate can be the display side of the liquid crystal panel. When the liquid crystal panel is assembled with the shell to form a display device, the light-blocking substrate is located between the shell and the light-transmitting substrate. Alternatively, when the liquid crystal panel is installed on a wall or other carrier, the light-blocking substrate is located between the wall and the light-transmitting substrate. That is, the light-transmitting substrate faces the user when the liquid crystal panel is in use. The liquid crystal panel can be a light energy liquid crystal erasable panel, and the light-transmitting substrate in the first substrate and the second substrate can be a flexible substrate, so that the writing pressure can be applied to the liquid crystal in the liquid crystal layer through the light-transmitting substrate, so that the liquid crystal in the liquid crystal layer is deflected, and the liquid crystal panel presents the writing trace. In addition, when the writing trace on the liquid crystal panel is erased, the light source can be used to irradiate the liquid crystal panel, so that the active layer of the thin film transistor in the liquid crystal panel generates carriers, so that the thin film transistor is turned on, so as to drive the liquid crystal in the liquid crystal layer to deflect to erase the writing trace on the liquid crystal panel.

[0087] As shown in Figures 1 to 7 , the liquid crystal panel further comprises a conductive film 06 located on the side of the second substrate 03 close to the liquid crystal layer 04. When the light filtering structure 01 is located between the second substrate 03 and the liquid crystal layer 04, as shown in Figure 4 and Figure 5 , the light filtering structure 01 can be located on the side of the conductive film 06 away from the second substrate 03, or as shown in Figure 6 , the light filtering structure 01 can be located between the conductive film 06 and the second substrate 03. When the light filtering structure 01 is located on the side of the conductive film 06 away from the second substrate 03, as shown in Figure 4 , the light filtering structure 01 can be stacked with the conductive film 06, or as shown in Figure 5 , the light filtering structure 01 can be inlaid in the conductive film 06. In optional embodiments, the side of the conductive film 06 away from the second substrate 03 can have a groove (not labeled in Figure 5 ), and the light filtering structure 01 is arranged in the groove on the conductive film 06 to be inlaid in the conductive film 06. In some embodiments, the conductive film 06 can have an inlaying hole, and the light filtering structure 01 is arranged in the inlaying hole on the conductive film 06 to be inlaid in the conductive film 06, which is not limited in the embodiments of the present application.

[0088] As shown in Figures 1 to 7As shown, the liquid crystal panel further comprises an insulating structure layer 07 located on the side of the thin film transistor 05 away from the first substrate 02. For case 1, the light filtering structure 01 can be located on the side of the insulating structure layer 07 away from the thin film transistor 05 (i.e., the light filtering structure 01 is located between the insulating structure layer 07 and the liquid crystal layer 04). The insulating structure layer 07 can comprise at least one insulating film layer, for example, the insulating structure layer 07 can comprise a passivation (PVX) layer, a planarization layer (PL), etc., which are not limited in the embodiments of the present application.

[0089] In the embodiments of the present application, the light filtering structure 01 can be a filter, and the material of the light filtering structure 01 can be optical plastic or flat glass. The light filtering structure 01 comprises an interference layer processed by a coating technology, which is used to interfere with light to filter out light. Alternatively, the material of the light filtering structure 01 can be a color resist material with light filtering function to filter out light. The material of the conductive film 06 can be an organic polymer, for example, the material of the conductive film 06 is polyethylene terephthalate (PET), i.e., the conductive film 06 is a PET conductive film. The light-transmitting substrate in the first substrate 02 and the second substrate 03 can be a transparent substrate, and the light-blocking substrate can be a dark resin substrate. For example, the transparent substrate is a flexible substrate prepared by using polyimide (PI) and the like, and the light-blocking substrate can be prepared by using a resin containing iron ions.

[0090] Please continue to refer to Figures 1 to 7 The liquid crystal panel further comprises a pixel electrode 08. The pixel electrode 08 and the thin film transistor 05 can both be located on the first substrate 02, and the pixel electrode 08 and the thin film transistor 05 are both located between the first substrate 02 and the liquid crystal layer 04, and the pixel electrode 08 is electrically connected with the drain electrode 056 of the thin film transistor 05. For example, the pixel electrode 08 is located on the side of the insulating structure layer 07 away from the first substrate 02, and the insulating structure layer 07 has a pixel connection hole, and the pixel electrode 08 is electrically connected with the drain electrode 056 of the thin film transistor 05 through the pixel connection hole of the insulating structure layer 07. The pixel electrode 08 can be a plate electrode or a block electrode. For example, the pixel electrode 08 is a block electrode. The material of the pixel electrode 08 can be metal oxide. For example, the material of the pixel electrode 08 can be indium tin oxide (ITO).

[0091] The conductive film 06 in this embodiment can be used as a common electrode. In some scenarios, the conductive film 06 is also referred to as the common electrode. When electrical signals are applied to the conductive film 06 and the pixel electrode 08 respectively, a voltage difference can be generated between the conductive film 06 and the pixel electrode 08, causing the liquid crystal of the liquid crystal layer 04 to deflect.

[0092] The following explanation uses the example of a thin-film transistor located on a first substrate and a filter structure located on a second substrate (i.e., case 3 above). For ease of description, the entirety of the first substrate and the various structures disposed on the first substrate is referred to as the first substrate, and the entirety of the second substrate and the various structures disposed on the second substrate is referred to as the second substrate. Please refer to... Figure 8 and Figure 9 , Figure 8 This is a front view of a first substrate provided in an embodiment of this application. Figure 9 This is a front view of a second substrate provided in an embodiment of this application. For example... Figure 8 As shown, the liquid crystal panel also includes: a plurality of gate lines 09 and a plurality of data lines 10 located on the first substrate 02, the plurality of gate lines 09 and the plurality of data lines 10 being insulated from and intersecting to define a plurality of pixel areas. Figure 8 (Not shown in the image), each pixel region has a thin-film transistor 05 and a pixel electrode 08. The gate 052 of each thin-film transistor 05 is electrically connected to the gate line 09, and the source 055 is electrically connected to the data line 10. The gate line 09 and gate 052 can be located on the same layer, and the data line 10, the source 055, and the drain 056 of the thin-film transistor 05 can be located on the same layer. For example... Figure 9 As shown, the second substrate 03 has a plurality of filter structures 01, which can correspond one-to-one with a plurality of thin film transistors 05 on the first substrate 02. After the first substrate and the second substrate are arranged opposite each other, the orthographic projection of each filter structure 01 in the plane of the first substrate 02 covers the orthographic projection of the active layer 051 of a thin film transistor 05 in the plane of the first substrate 02.

[0093] Example, Figure 10 This is an equivalent circuit diagram of a first substrate provided in an embodiment of this application. Figure 11 This is an equivalent circuit diagram of a liquid crystal panel provided in an embodiment of this application. Please refer to it. Figure 10The gate electrode 052 of the thin film transistor 05 is electrically connected to the gate line 09, the source electrode 055 of the thin film transistor 05 is electrically connected to the data line 10, and the drain electrode 056 of the thin film transistor 05 is electrically connected to the pixel electrode 08. The gate line 09 is used to apply a switching signal (i.e., a gate voltage) to the gate electrode 052 of the thin film transistor 05 to control the opening and closing of the thin film transistor 05. When the thin film transistor 05 is in an open state, the data signal on the data line 10 is transmitted to the drain electrode 056 through the source electrode 055 of the thin film transistor 05 and then to the pixel electrode 08 to apply a driving voltage to the pixel electrode 08. The pixel electrode 08 on the first substrate 02 and the conductive film 06 (i.e., a common electrode) on the second substrate 03 form a driving capacitor, i.e., a voltage difference is formed between the pixel electrode 08 and the conductive film 06 to drive the liquid crystal between the pixel electrode 08 and the conductive film 06 to deflect.

[0094] In the embodiment of the present application, the liquid crystal panel can be a light energy liquid crystal panel, and the liquid crystal in the liquid crystal panel can be deflected under the driving of light energy. For example, the control gate line 09 is used to prohibit the application of a switching signal to the gate electrode 052 of the thin film transistor 05, and light is used to irradiate the liquid crystal panel. The active layer 051 of the thin film transistor 05 generates carriers after being irradiated by the light, so that the gate voltage of the thin film transistor 05 gradually increases. When the gate voltage of the thin film transistor 05 reaches the opening voltage, the thin film transistor 05 is opened, and the data signal in the data line 10 can be transmitted to the pixel electrode 08 through the thin film transistor 05, so that a voltage difference is formed between the pixel electrode 08 and the conductive film 06 to drive the liquid crystal between the pixel electrode 08 and the conductive film 06 to deflect, for example, to drive the liquid crystal to deflect from the P state to the FC state to erase the content written on the liquid crystal panel. When the intensity of the light irradiated on the thin film transistor 05 is greater than or equal to 20,000 nits, the thin film transistor can generate a leakage current of 1.00E-07 A, and the thin film transistor 05 is opened. Therefore, in the embodiment of the present application, the intensity of the light irradiated on the thin film transistor 05 is greater than or equal to 20,000 nits.

[0095] As described above, in the embodiment of the present application, when the active layer 051 is an a-Si active layer, the light of at least one sub-band filtered out by the light filtering structure 01 includes light of 625 nm. The design principle of filtering out the light of 625 nm by the light filtering structure 01 is introduced below. Figure 12 is a characteristic curve diagram of a thin film transistor provided in the embodiment of the present application, Figure 13 is another characteristic curve diagram of a thin film transistor provided in the embodiment of the present application. Figure 12 and Figure 13 The active layers of the thin film transistors described above are all a-Si active layers, and the on-state current of the thin film transistor is about 1.00E-07 A (i.e., when the leakage current of the thin film transistor reaches 1.00E-07 A, the thin film transistor is opened). Please refer toFigure 12 and Figure 13 , curve 1 is the relationship curve of the gate voltage Vg and the drain current Id of the thin film transistor before the thin film transistor is irradiated by light with a wavelength of 395 nm, curve 2 is the relationship curve of the gate voltage Vg and the drain current Id of the thin film transistor after the thin film transistor is irradiated by light with a wavelength of 395 nm, curve 3 is the relationship curve of the gate voltage Vg and the drain current Id of the thin film transistor before the thin film transistor is irradiated by light with a wavelength of 625 nm, and curve 4 is the relationship curve of the gate voltage Vg and the drain current Id of the thin film transistor after the thin film transistor is irradiated by light with a wavelength of 625 nm. As shown in Figure 12 , before the thin film transistor is irradiated by light with a wavelength of 395 nm, the drain current Id of the thin film transistor can reach 1.00E-07 ampere when the gate voltage Vg of the thin film transistor is about 3.2 V, and after the thin film transistor is irradiated by light with a wavelength of 395 nm, the drain current Id of the thin film transistor can reach 1.00E-07 ampere only when the gate voltage Vg of the thin film transistor is about 4.8 V. That is, after the thin film transistor is irradiated by light with a wavelength of 395 nm, the turn-on voltage (threshold voltage) of the thin film transistor increases, but the increase is not very large, and therefore the light with a wavelength of 395 nm has a small influence on the switching characteristics of the thin film transistor. As shown in Figure 13 , before the thin film transistor is irradiated by light with a wavelength of 625 nm, the drain current Id of the thin film transistor can reach 1.00E-07 ampere when the gate voltage Vg of the thin film transistor is about 3.2 V, and after the thin film transistor is irradiated by light with a wavelength of 625 nm, the drain current Id of the thin film transistor can reach 1.00E-07 ampere only when the gate voltage Vg of the thin film transistor is about 5.6 V. That is, after the thin film transistor is irradiated by light with a wavelength of 625 nm, the turn-on voltage of the thin film transistor increases, and the increase is relatively large. According to Figure 12 and Figure 13 , it can be known that the active layer of the thin film transistor appears a light degradation phenomenon (that is, a phenomenon that the conductivity of the active layer decreases) after being irradiated by light with a wavelength of 625 nm, and the light degradation phenomenon is relatively obvious. That is, the light with a wavelength of 625 nm has a greater influence on the switching characteristics of the thin film transistor. Therefore, in the embodiment of the present application, the light with a wavelength of 625 nm is included in the light of at least one sub-waveband filtered out by the light filtering structure 01.

[0096] In summary, the liquid crystal panel provided by the embodiments of the present application has the following advantages. In the liquid crystal panel, the orthogonal projection of the light filtering structure on the plane of the first substrate covers the orthogonal projection of at least part of the channel region of the thin film transistor on the plane of the first substrate, and the light filtering structure can filter light in at least one sub-band of the visible light band, which includes a band affecting the position of the Fermi level of the active layer of the thin film transistor. Therefore, the light filtering structure can prevent the light in the band affecting the position of the Fermi level of the active layer of the thin film transistor from irradiating at least part of the channel region of the active layer, which helps to prolong the service life of the thin film transistor, thereby prolonging the service life of the liquid crystal panel.

[0097] In addition, the light filtering structure can transmit light in sub-bands of the visible light band except the at least one sub-band, and the light transmitted by the light filtering structure can irradiate the active layer of the thin film transistor, so that the active layer generates carriers, thereby enabling the thin film transistor to drive the liquid crystal deflection to achieve erasing of handwriting written on the liquid crystal panel, and thus, when the liquid crystal panel is a light energy liquid crystal panel, the light energy erasing function can be realized.

[0098] Please refer to Figure 14 which shows a flowchart of a manufacturing method of a liquid crystal panel provided by the embodiments of the present application. The method can be used to manufacture the liquid crystal panel provided by the above embodiments. Please refer to Figure 14 The method can include the following steps:

[0099] In step 1401, the first substrate and the second substrate are formed.

[0100] In step 1402, the first substrate and the second substrate are arranged oppositely to obtain a liquid crystal panel, which further includes a light filtering structure, a liquid crystal layer and a thin film transistor between the first substrate and the second substrate. The thin film transistor includes an active layer, and the active layer includes a channel region. The orthogonal projection of the light filtering structure on the plane of the first substrate covers the orthogonal projection of at least part of the channel region on the plane of the first substrate. The light filtering structure is used to filter light in at least one sub-band of the visible light band and transmit light in sub-bands of the visible light band except the at least one sub-band. The at least one sub-band includes a band affecting the position of the Fermi level of the active layer of the thin film transistor.

[0101] The liquid crystal in the liquid crystal layer has at least two stable states. The liquid crystal in the liquid crystal layer in the first stable state can reflect light of a target color in light irradiated to the liquid crystal, and the liquid crystal in the liquid crystal layer in the second stable state can scatter light irradiated to the liquid crystal.

[0102] In summary, the manufacturing method of the liquid crystal panel provided in the embodiments of the present application can avoid the light in the waveband affecting the position of the Fermi level of the active layer of the thin film transistor from irradiating the at least part of the channel region of the active layer, affect the switching characteristic of the thin film transistor, and help to prolong the service life of the thin film transistor, thereby prolonging the service life of the liquid crystal panel.

[0103] Please refer to Figure 15 , which shows a flowchart of another manufacturing method of a liquid crystal panel provided in the embodiments of the present application. Figure 15 The manufacturing method of the liquid crystal panel provided in the embodiments of the present application can be used to manufacture the liquid crystal panel shown in Figure 4 , for example. Figures 1 to 3 The manufacturing process of the liquid crystal panel shown in Figures 5 to 7 may refer to the embodiments. Please refer to Figure 15 , which shows a flowchart of the manufacturing method of the liquid crystal panel.

[0104] In step 1501, a first substrate and a second substrate are formed.

[0105] The first substrate is a light-shielding substrate, and the second substrate is a light-transmitting substrate. The first substrate can be a rigid substrate made of a light-shielding organic resin with certain firmness, such as a dark resin, and the second substrate can be a flexible substrate made of a flexible material, such as PI.

[0106] In step 1502, a thin film transistor is formed on the first substrate.

[0107] Please refer to Figure 16 , Figure 16 , which shows a schematic diagram of the thin film transistor 05 formed on the first substrate 02 provided in the embodiments of the present application. The thin film transistor 05 is a bottom-gate thin film transistor, which includes, in sequence along the direction away from the first substrate 02, a gate electrode 052, a gate insulating layer 053, an active layer 051, an interlayer dielectric layer 054, and a source-drain electrode layer. The source-drain electrode layer includes a source electrode 055 and a drain electrode 056, and the active layer 051 includes a first contact region in contact with the source electrode 055, a second contact region in contact with the drain electrode 056, and a part of a channel region Q between the first contact region and the second contact region. The interlayer dielectric layer 054 has a source electrode via (not shown in the figure) and a drain electrode via (not shown in the figure), the source electrode 055 is electrically connected to the active layer 051 through the source electrode via, and the drain electrode 056 is electrically connected to the active layer 051 through the drain electrode via. Figure 16 Figure 16 ​​

[0108] The material of the active layer 051 can be a semiconductor material, such as a-Si or oxide. The materials of the gate 052, the source 055 and the drain 056 are all metal materials. The material of the gate insulation layer 053 and the material of the interlayer dielectric layer 054 can include inorganic materials such as SiOx (silicon oxide), SiNx (silicon nitride), Al2O3 (aluminum oxide), or organic resin materials.

[0109] For example, forming the thin film transistor on the first substrate 02 can include the following five steps:

[0110] Step (1), forming a metal material layer on the first substrate 02, and processing the metal material layer by a one-time patterning process to obtain the gate 052. At the same time of forming the gate 052, a gate line can also be formed on the first substrate 02, and the gate 052 is electrically connected to the gate line and located in the same layer.

[0111] Step (2), depositing a layer of SiOx on the side of the gate 052 away from the first substrate 02, and drying the deposited SiOx to obtain the gate insulation layer 053.

[0112] Step (3), depositing a layer of a-Si on the side of the gate insulation layer 053 away from the first substrate 02 to obtain an a-Si material layer, and processing the a-Si material layer by a one-time patterning process to obtain the active layer 051.

[0113] Step (4), depositing a layer of SiNx on the side of the active layer 051 away from the first substrate 02 to obtain a SiNx material layer, and processing the SiNx material layer by a one-time patterning process to obtain the interlayer dielectric layer 054.

[0114] Step (5), depositing a layer of metal material on the side of the active layer 051 away from the first substrate 02 to obtain a metal material layer, and processing the metal material layer by a one-time patterning process to obtain the source 055 and the drain 056. At the same time of forming the source 055 and the drain 056, a data line can also be formed, and the source 055, the drain 056 and the data line are located in the same layer, and the source 055 is electrically connected to the data line.

[0115] In step 1503, an insulating structure layer is formed on the side of the thin film transistor away from the first substrate, and the insulating structure layer has a pixel connection hole.

[0116] Please refer to Figure 17 , Figure 17is a schematic view showing a step of forming an insulating structure layer 07 on a side of the thin film transistor 05 away from the first substrate 02. The insulating structure layer 07 has a pixel connection hole K. The insulating structure layer 07 can include at least one insulating film layer. In the embodiment, the insulating structure layer 07 includes a passivation layer and a planarization layer. The passivation layer can be made of inorganic materials such as SiOx, SiNx or Al2O3. The planarization layer can be made of organic resin.

[0117] In an example, the step of forming the insulating structure layer 07 on the side of the thin film transistor 05 away from the first substrate 02 includes: sequentially forming a SiOx layer and an organic resin layer on the side of the thin film transistor 05 away from the first substrate 02, and processing the SiOx layer and the organic resin layer by a one-time patterning process to obtain the insulating structure layer 07.

[0118] In step 1504, a pixel electrode is formed on the side of the insulating structure layer away from the first substrate. The pixel electrode is electrically connected to the drain of the thin film transistor through the pixel connection hole on the insulating structure layer.

[0119] Please refer to Figure 18 , Figure 18 is a schematic view showing a step of forming a pixel electrode 08 on the side of the insulating structure layer 07 away from the first substrate 02. The pixel electrode 08 is electrically connected to the drain 056 of the thin film transistor 05 through the pixel connection hole K in the insulating structure layer 07.

[0120] In an example, an ITO layer is formed on the side of the insulating structure layer 07 away from the first substrate 02 by a plasma enhanced chemical vapor deposition (PECVD) process. The ITO layer is processed by a one-time patterning process to obtain the pixel electrode 08.

[0121] The first substrate can be obtained after the above steps 1502 to 1504. A front view of the first substrate can be as shown in Figure 8 . Figure 18 may be a cross-sectional view of the A-A part of Figure 8 .

[0122] In step 1505, a conductive film is formed on the second substrate.

[0123] Please refer to Figure 19 , Figure 19A schematic diagram of the conductive film 06 formed on the second substrate 03 is shown. The conductive film 06 is formed on the second substrate 03. The material of the conductive film 06 can be PET. For example, a layer of PET is deposited on the second substrate 03, and the deposited PET is dried to obtain the conductive film 06.

[0124] In step 1506, the light filtering structure is formed on the side of the conductive film away from the second substrate.

[0125] Please refer to Figure 20 , Figure 20 A schematic diagram of the light filtering structure 01 formed on the side of the conductive film 06 away from the second substrate 03 is shown. The light filtering structure 01 is stacked on the conductive film 06.

[0126] The light filtering structure 01 can be a light filter. The material of the light filter can be optical plastic, flat glass, or color resist material with light filtering function. In an optional embodiment, a layer of color resist material is deposited on the side of the conductive film 06 away from the second substrate 03 to obtain a color resist material layer. The color resist material layer is processed by a one-time patterning process to obtain the light filtering structure 01. In another optional embodiment, optical plastic is formed on the side of the conductive film 06 away from the second substrate 03. The optical plastic is processed by a plating process to form an interference layer on the optical plastic. Then, the optical plastic with the interference layer is processed by a one-time patterning process to obtain the light filtering structure 01. In another optional embodiment, optical plastic is formed on the side of the conductive film 06 away from the second substrate 03. The optical plastic is processed by a one-time patterning process to obtain an optical plastic block. The optical plastic block is processed by a plating process to form an interference layer on the optical plastic, thereby obtaining the light filtering structure 01.

[0127] The second substrate can be obtained after the above steps 1505 to 1506. The front view of the second substrate can be as shown in Figure 9 .The cross-sectional view of the B-B part of the second substrate can be as shown in Figure 20 . Figure 9

[0128] In step 1507, the first substrate and the second substrate are arranged oppositely to obtain a liquid crystal panel. The liquid crystal panel further includes a liquid crystal layer, a thin film transistor, and a light filtering structure between the first substrate and the second substrate.

[0129] The structure of the liquid crystal panel obtained by arranging the first substrate 02 and the second substrate 03 oppositely can be as shown in Figure 4As shown. The liquid crystal layer 04, the filter structure 01, the thin film transistor 05, the conductive film 06, the insulating structure layer 07, the pixel electrode 08, the gate line, and the data line 10 are all located between the first substrate 02 and the second substrate 03. The orthographic projection of the filter structure 01 on the first substrate 02 covers the orthographic projection of the active layer 051 of the thin film transistor 05 on the first substrate 02.

[0130] In one optional embodiment, a liquid crystal layer 04 is first formed on the side of the first substrate 02 with thin-film transistors 05. Then, a second substrate 03 is disposed opposite to the first substrate 02, such that the filter structures 01 on the second substrate 03 correspond one-to-one with the thin-film transistors 05 on the first substrate 02. The orthographic projection of each filter structure 01 on the first substrate 02 covers the orthographic projection of the corresponding thin-film transistor 05 on the first substrate 02, thereby obtaining a liquid crystal panel. In another optional embodiment, the first substrate 02 and the second substrate 03 are first disposed opposite to each other, such that the filter structures 01 on the second substrate 03 correspond one-to-one with the thin-film transistors 05 on the first substrate 02. The orthographic projection of each filter structure 01 on the first substrate 02 covers the orthographic projection of the corresponding thin-film transistor 05 on the first substrate 02. Then, a liquid crystal layer 04 is formed between the first substrate 02 and the second substrate 03 by a potting process.

[0131] The embodiments of this application are used to manufacture Figure 4 The following example uses an LCD panel as an illustration. In manufacturing such... Figure 5 In the case of the liquid crystal panel shown, in step 1505, after depositing a PET layer on the second substrate 03, a patterning process can be performed on the PET layer to form a groove for embedding the filter structure 01.

[0132] Those skilled in the art will readily understand that the order of steps in the manufacturing method of the liquid crystal panel provided in the embodiments of this application can be appropriately adjusted, and the steps can also be added or removed as appropriate. Any variations that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the protection scope of this application, and therefore will not be elaborated further.

[0133] In summary, the manufacturing method of the liquid crystal panel provided by the embodiments of the present application can avoid the light in the waveband affecting the position of the Fermi level of the active layer of the thin film transistor from irradiating the at least part of the channel region of the active layer, so as to help prolong the switching characteristic of the thin film transistor, thereby prolonging the service life of the liquid crystal panel.

[0134] It should be noted that the one-time patterning process involved in the embodiments of the present application includes photoresist coating, exposure, development, etching and photoresist stripping. The processing of the material layer (for example, the ITO material layer) by the one-time patterning process includes: coating a layer of photoresist on the material layer (for example, the ITO material layer) to form a photoresist layer, exposing the photoresist layer using a mask to form a completely exposed area and a non-exposed area of the photoresist layer, then processing using a development process to completely remove the photoresist in the completely exposed area and completely retain the photoresist in the non-exposed area, etching the region corresponding to the completely exposed area of the material layer (for example, the ITO material layer) using an etching process, and finally stripping the photoresist in the non-exposed area to obtain the corresponding structure (for example, the pixel electrode 08). Here, the positive photoresist is taken as an example for description. When the photoresist is a negative photoresist, the process of the one-time patterning process can refer to the description in this paragraph, and the embodiments of the present application will not be described here.

[0135] The embodiments of the present application also provide a display device, which includes the liquid crystal panel provided by the above embodiments. The display device can be any product or component with display function, such as an optical energy liquid crystal erasing device, a tablet computer, electronic paper, a smart phone, a notebook computer or a display.

[0136] In the present application, the term "at least one" refers to one or more, and the term "multiple" refers to two or more, unless otherwise explicitly limited. The terms "first", "second" and "third" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance. The term "electrically connected" refers to connection and can transmit electric charge, without limiting that there must be electric charge transmission. For example, A and B are electrically connected, which means that A and B are connected and electric charge can be transmitted between A and B, without limiting that there must be electric charge transmission between A and B.

[0137] It is to be understood that the sizes of the layers and regions shown in the figures can be exaggerated for clarity of illustration. Also, it is to be understood that when a layer or element is referred to as being "on" another layer or element, it can be directly on the other element or intervening layers can also be present. Furthermore, it is to be understood that when a layer or element is referred to as being "beneath" another layer or element, it can be directly beneath the other element, or intervening layers or elements can also be present. In addition, it is to be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer or element between the two layers or elements, or one or more intervening layers or elements can also be present. Similar reference characters refer to similar elements throughout the several figures of the drawings.

[0138] The above description is merely illustrative of the exemplary embodiments of this application and is not intended to limit the scope of the application. It is recognized that modifications, equivalents, and alternatives to the exemplary embodiments described herein can be apparent to one skilled in the art and can be made without departing from the spirit and scope of the application.

Claims

1. A liquid crystal panel, characterized in that, include: A filter structure, opposing first and second substrates, and a liquid crystal layer and a thin-film transistor located between the first and second substrates; The liquid crystal in the liquid crystal layer has at least two stable states. When the liquid crystal is in the first stable state, it can reflect the light of the target color in the light rays incident on the liquid crystal. When the liquid crystal is in the second stable state, it can scatter the light rays incident on the liquid crystal. The thin-film transistor includes an active layer, the active layer includes a channel region, and the orthographic projection of the filter structure onto the plane of the first substrate covers at least a portion of the orthographic projection of the channel region onto the plane of the first substrate. The filter structure is used to filter out light from at least one sub-band of the visible light band and allow light from sub-bands of the visible light band other than the at least one sub-band to pass through. The light transmitted from the filter structure can irradiate the active layer, causing the active layer to generate charge carriers, thereby driving the liquid crystal to deflect and erase the handwriting written on the liquid crystal panel. The at least one sub-band includes a band that affects the position of the Fermi level of the active layer.

2. The liquid crystal panel according to claim 1, characterized in that, The orthographic projection of the filter structure onto the plane of the first substrate completely covers the orthographic projection of the channel region onto the plane of the first substrate.

3. The liquid crystal panel according to claim 2, characterized in that, The orthographic projection of the filter structure onto the plane of the first substrate covers the orthographic projection of the active layer onto the plane of the first substrate.

4. The liquid crystal panel according to claim 1, characterized in that, The active layer is made of amorphous silicon, and the at least one sub-band includes 600-650 nanometers.

5. The liquid crystal panel according to claim 1, characterized in that, The liquid crystal in the liquid crystal layer is a bistable liquid crystal.

6. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The thin-film transistor is a bottom-gate thin-film transistor, and the filter structure is located between the thin-film transistor and the liquid crystal layer.

7. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The thin-film transistor is a top-gate thin-film transistor, and the filter structure is located on the side of the thin-film transistor away from the liquid crystal layer.

8. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The thin-film transistor is a bottom-gate thin-film transistor, and the filter structure is located on the side of the liquid crystal layer away from the thin-film transistor.

9. The liquid crystal panel according to claim 8, characterized in that, The liquid crystal panel also includes: The conductive film is located on the side of the second substrate closer to the liquid crystal layer, and the filter structure is located on the side of the conductive film away from the second substrate, or the filter structure is located between the conductive film and the second substrate.

10. The liquid crystal panel according to claim 9, characterized in that, The filter structure is stacked with the conductive film; or... The filter structure is embedded in the conductive film.

11. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The liquid crystal panel further includes a conductive film located on the side of the second substrate near the liquid crystal layer.

12. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The liquid crystal panel further includes: pixel electrodes; The pixel electrode and the thin-film transistor are both located between the first substrate and the liquid crystal layer, and the pixel electrode and the drain of the thin-film transistor are electrically connected.

13. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The liquid crystal panel further includes: gate lines and data lines, the gate lines and data lines defining a pixel area, the thin film transistor located in the pixel area, the gate of the thin film transistor being electrically connected to the gate lines, and the source of the thin film transistor being electrically connected to the data lines.

14. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, The thin-film transistor includes an active layer, a gate, a source, and a drain. The active layer includes a first contact region that contacts the source and a second contact region that contacts the drain. The channel region is the portion of the active layer located between the first contact region and the second contact region.

15. The liquid crystal panel according to any one of claims 1 to 5, characterized in that, One of the first substrate and the second substrate is a light-shielding substrate, and the other is a light-transmitting substrate.

16. The liquid crystal panel according to claim 15, characterized in that, The light-transmitting substrate is a flexible substrate.

17. A method for manufacturing a liquid crystal panel, characterized in that, include: Forming a first substrate and a second substrate; A liquid crystal panel is obtained by arranging the first substrate and the second substrate opposite to each other. The liquid crystal panel further includes a light filter structure and a liquid crystal layer and a thin film transistor located between the first substrate and the second substrate. The liquid crystal in the liquid crystal layer has at least two stable states. When the liquid crystal in the liquid crystal layer is in the first stable state, it can reflect the light of the target color in the light rays incident on the liquid crystal. When the liquid crystal in the liquid crystal layer is in the second stable state, it can scatter the light rays incident on the liquid crystal. The thin-film transistor includes an active layer, the active layer includes a channel region, and the orthographic projection of the filter structure onto the plane of the first substrate covers at least a portion of the orthographic projection of the channel region onto the plane of the first substrate. The filter structure is used to filter out light from at least one sub-band of the visible light band and allow light from sub-bands of the visible light band other than the at least one sub-band to pass through. The light transmitted from the filter structure can irradiate the active layer, causing the active layer to generate charge carriers, thereby driving the liquid crystal to deflect and erase the handwriting written on the liquid crystal panel. The at least one sub-band includes a band that affects the position of the Fermi level of the active layer.

18. The method according to claim 17, characterized in that, Before setting the first substrate and the second substrate opposite to each other, the method further includes: The thin-film transistor and the filter structure are formed on the first substrate, wherein the filter structure is located on the side of the thin-film transistor away from the first substrate, or the filter structure and the thin-film transistor are located on opposite sides of the first substrate.

19. The method according to claim 17, characterized in that, Before setting the first substrate and the second substrate opposite to each other, the method further includes: The thin-film transistor is formed on the first substrate; The filter structure is formed on the second substrate.

20. A display device, characterized in that, Including the liquid crystal panel as described in any one of claims 1 to 16.

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