Display panel, preparation method thereof and display device
By introducing a raised structure and a multi-layer conductor layer design in the pixel definition layer of the OLED display panel, the crosstalk problem between adjacent sub-pixels is solved, resulting in better display effect and brightness uniformity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2023-01-18
- Publication Date
- 2026-06-30
Smart Images
Figure CN115884632B_ABST
Abstract
Description
Technical Field
[0001] This disclosure belongs to the field of display technology, specifically relating to a display panel and its manufacturing method, and a display device. Background Technology
[0002] This section is intended to provide background or context for the embodiments set forth in the claims. The description herein is not an admission that it is prior art simply because it is included in this section.
[0003] As the pixel density (PPI) of organic light-emitting diode (OLED) display panels continues to increase, crosstalk between adjacent sub-pixels becomes increasingly difficult to suppress. Summary of the Invention
[0004] This disclosure provides a display panel, a method for manufacturing the same, and a display device.
[0005] This disclosure adopts the following technical solution: a display panel, comprising:
[0006] Base;
[0007] Multiple pixel electrodes located on one side of the substrate;
[0008] A pixel definition layer disposed on one side of the substrate and located between the pixel electrodes;
[0009] A conductive structure layer located on the side of the pixel definition layer away from the substrate;
[0010] The pixel definition layer includes a raised structure, which is located in a section of the pixel definition layer away from the substrate and protrudes laterally.
[0011] There is an overlap between the orthographic projection of the protrusion structure on the substrate and the orthographic projection of the pixel electrode on the substrate. In the overlapping area of the protrusion structure and the pixel electrode, a groove is formed on the surface of the pixel electrode, and the opening direction of the groove is basically consistent with the protrusion direction of the protrusion structure.
[0012] In some embodiments, the pixel electrode includes a plurality of conductor layers disposed sequentially along a direction away from the substrate, wherein the conductor layer furthest from the substrate among the plurality of conductor layers is the top conductor layer, and the top conductor layer is disposed in the same layer as the conductive structure layer.
[0013] In some embodiments, at least one of the pixel electrodes has a protrusion on the periphery of the side away from the substrate, the orthogonal projection of the protrusion on the substrate covering and extending beyond the orthogonal projection of the protrusion on the substrate.
[0014] In some embodiments, a boss is formed in the peripheral region of the conductor layer adjacent to the top conductor layer among the plurality of conductor layers, and the top conductor layer is connected to the side of the boss.
[0015] In some embodiments, the protrusion structure surrounds the pixel opening region defined by the pixel definition layer, and / or the boss surrounds the pixel electrode.
[0016] In some embodiments, the display panel further includes an insulating layer disposed on the conductive structure layer, wherein there is an overlapping area between the orthographic projection of the insulating layer on the substrate and the orthographic projection of the conductive structure on the substrate.
[0017] In some embodiments, the pixel definition layer includes a first pixel definition layer and a second pixel definition layer disposed on the side of the first pixel definition layer away from the substrate, the conductive structure layer is disposed on the surface of the second pixel definition layer away from the substrate, and the pixel definition layer further includes an insulating layer disposed on the surface of the conductive structure layer away from the substrate;
[0018] At least a portion of the protruding structure is formed by a segment of the first pixel definition layer on the side away from the substrate;
[0019] The orthographic projection of the first pixel definition layer onto the plane of the substrate exceeds the orthographic projection of the second pixel definition layer onto the plane of the substrate, and the orthographic projection of the conductive structure layer onto the plane of the substrate exceeds the orthographic projections of the second pixel definition layer and the insulating layer onto the plane of the substrate.
[0020] This disclosure adopts the following technical solution: a method for manufacturing a display panel, comprising:
[0021] Provide a base;
[0022] Multiple pixel electrodes are formed on the substrate;
[0023] A pixel definition layer is formed on the substrate between the pixel electrodes;
[0024] A conductive structure layer is formed on the side of the pixel definition layer away from the substrate;
[0025] An organic functional layer is formed covering the pixel electrode and the conductive structure layer;
[0026] A common electrode is formed on the side of the organic functional layer away from the substrate;
[0027] The pixel definition layer includes a raised structure located in a section of the pixel definition layer away from the substrate and protruding laterally. The orthographic projection of the raised structure on the substrate overlaps with the orthographic projection of the pixel electrode on the substrate. At the overlapping area of the raised structure and the pixel electrode, a groove is formed on the surface of the pixel electrode, and the opening direction of the groove is substantially consistent with the protrusion direction of the raised structure.
[0028] In some embodiments, a passivation layer is formed on the substrate before forming the pixel electrode and the pixel definition layer; the steps for forming the pixel electrode and the pixel definition layer specifically include:
[0029] Multiple conductor material layers are formed on the passivation layer;
[0030] A grid-like trench is etched in the plurality of conductor material layers to obtain a plurality of conductor layers stacked in each grid, and the bottom of the trench enters the passivation layer;
[0031] The trench is filled with insulating material, the top surface of which is lower than the opening of the trench.
[0032] A pixel definition layer is formed using a patterning process, and the top of the pixel definition layer extends laterally beyond the opening of the trench to form the protrusion structure;
[0033] The top conductor layer of the plurality of conductor layers is etched to form a protrusion composed of the top conductor layer below the protrusion structure of the pixel definition layer, wherein the orthographic projection of the protrusion structure on the plane of the substrate exceeds the orthographic projection of the protrusion on the plane of the substrate, or the top conductor layer of the plurality of conductor layers is completely removed.
[0034] A conductor material layer is deposited again to obtain the top conductor layer of the pixel electrode and the conductive structure layer.
[0035] The present disclosure adopts the following technical solution: a display device, including the aforementioned display panel. Attached Figure Description
[0036] Figure 1 This is a schematic diagram of the structure of a display panel according to an embodiment of the present disclosure.
[0037] Figure 2 yes Figure 1 The diagram shows the structure of the display panel during an intermediate stage of its fabrication.
[0038] Figure 3 yes Figure 1 The diagram shows the structure of the display panel during an intermediate stage of its fabrication.
[0039] Figure 4 yes Figure 1 The diagram shows the structure of the display panel during an intermediate stage of its fabrication.
[0040] Figure 5 yes Figure 1 The diagram shows the structure of the display panel during an intermediate stage of its fabrication.
[0041] Figure 6 This is a schematic diagram of the current density distribution of a display panel according to an embodiment of the present disclosure.
[0042] Figure 7 This is a schematic diagram of the structure of a display panel in an intermediate stage of the manufacturing process according to another embodiment of this disclosure.
[0043] Figure 8 yes Figure 7 The diagram shows the structure of the next stage of the fabrication process for the display panel.
[0044] Figure 9 This is a schematic diagram of the structure of a display panel according to another embodiment of the present disclosure.
[0045] Figures 10 to 13 yes Figure 9 The diagram shows the structure of the display panel during an intermediate stage of its fabrication.
[0046] Figure 14 This is a schematic diagram of the structure of a display panel according to another embodiment of the present disclosure.
[0047] Figure 15 and Figure 16 This is a schematic diagram of the structure of a display panel in an intermediate stage of the manufacturing process according to another embodiment of this disclosure.
[0048] Figure 17 yes Figure 16 The diagram shows the structure of the next stage of the fabrication process for the display panel.
[0049] Figures 18 to 22 This is a schematic diagram of the structure of a display panel at different stages of its fabrication, according to another embodiment of this disclosure.
[0050] Figure 23 This is a top perspective view of a portion of the structure of the display panel in an embodiment of this disclosure.
[0051] Figure 24 This is a partial enlarged view of the display panel according to an embodiment of the present disclosure. Detailed Implementation
[0052] The present disclosure will be further described below with reference to the embodiments shown in the accompanying drawings.
[0053] Figure 1This is a schematic diagram of the structure of a display panel according to an embodiment of the present disclosure.
[0054] Specifically, Figure 1 The image shown is a partial cross-sectional view of a silicon-based organic light-emitting diode (OLED) display panel.
[0055] Substrate 1 is a silicon substrate, and driving circuits (not shown), such as pixel circuits, as well as various power lines (not shown) and signal lines (not shown) are disposed within the silicon substrate. This application does not limit the design of substrate 1; designs can be made with reference to known technologies. Silicon substrates are more suitable for forming extremely high pixel densities. Of course, the material of substrate 1 is not limited to silicon; it can also be other types of semiconductors or insulating materials such as glass.
[0056] A passivation layer 2 is disposed on the substrate 1 to provide a support surface for the pixel electrode and to protect the circuitry on the substrate 1. Optionally, the material of the passivation layer 2 is silicon oxide or silicon nitride.
[0057] In this embodiment of the present disclosure, the pixel electrode has a three-layer structure from bottom to top: a first conductor layer 41, a second conductor layer 42, and a third conductor layer 43. Optionally, the first conductor layer 41 is made of titanium, the first conductor layer 42 is made of aluminum, and the third conductor layer 43 is made of indium tin oxide.
[0058] refer to Figure 23 The pixel definition layer 3 is in a grid pattern and is disposed on the passivation layer 2. The pixel definition layer 3 is used to define the light-emitting region of a sub-pixel from the organic functional layer. Optionally, the material of the pixel definition layer 3 is silicon oxide. The pixel definition layer 3 also separates the pixel electrodes from each other.
[0059] Further reference Figure 24 In the overlapping area between the protruding structure and the pixel electrode, a groove is formed on the surface of the pixel electrode, and the opening direction of the groove is basically consistent with the protruding direction of the protruding structure.
[0060] The pixel definition layer 3 has a raised structure 32. The raised structure 32 is located in the section of the pixel definition layer away from the substrate 1 and protrudes laterally. With the substrate 1 located below the pixel definition layer 3, the raised structure 32 can also be referred to as a top flange.
[0061] The conductive structure layer 43a is disposed on the pixel definition layer. The orthographic projection of the conductive structure layer 43a onto the plane of the substrate 1 is substantially coincident with the orthographic projection of the pixel definition layer 3 onto the plane of the substrate 1. Slight differences between the two orthographic projections are allowed.
[0062] The conductive structure layer 43a and the third conductor layer 43 are disposed in the same layer. That is, they are formed from the same material layer.
[0063] Continue to refer to Figure 1 and Figure 23 With the substrate 1 positioned below the pixel definition layer 3, the first conductor layer 41 and the second conductor layer 42 of the pixel electrode are located below the protrusion structure 32. A portion of each of the first conductor layer 41 and the second conductor layer 42 is located between the protrusion structure 32 and the substrate 1.
[0064] A boss is formed on the edge region of the top surface of the second conductor layer 42. In some embodiments, the boss is ring-shaped.
[0065] The protrusion section of the second conductor layer 42 is located between the protrusion structure 32 and the substrate 1. Furthermore, the orthographic projection of the protrusion structure onto the plane of the substrate covers and extends beyond the orthographic projection of the protrusion section onto the plane of the substrate. The distance between the surface of the protrusion away from the substrate 1 and the substrate 1 is greater than the distance between the central region of the surface of the third conductor layer 43 away from the substrate 1 and the substrate 1. There is an overlapping area between the orthographic projection of the protrusion structure 32 onto the plane of the substrate 1 and the orthographic projection of the third conductor layer 43 onto the plane of the substrate 1.
[0066] With the substrate 1 positioned below the pixel definition layer 3, the annular protrusion is located below the protrusion structure 32, and the third conductor layer 43 and the conductive structure layer 43a of the pixel electrode are separated at intervals on the side surface of the protrusion structure 32.
[0067] After forming the pixel definition layer 43 and the first conductor layer 41 and the second conductor layer 42 of the pixel electrode, a full layer of conductors can be deposited to simultaneously obtain the third conductor layer 43 and the conductive structure layer 43a of the pixel electrode. Since the protrusion structure 32 extends beyond the annular protrusion on the top of the first conductor layer 41 and the second conductor layer 42 of the pixel electrode, when the material layer used to form the third conductor layer 43 of the pixel electrode is deposited, the conductive structure layer 43a deposited on the top surface of the pixel definition layer 3 and the third conductor layer 43 deposited on the top surface of the first conductor layer 41 and the second conductor layer 42 are naturally separated by the obstruction of the protrusion structure 32.
[0068] Because the conductive structure layer 43a is close to the common electrode 6 formed in subsequent steps, even if spikes appear on the bottom surface of the common electrode 6, a large number of electric field lines terminate at the conductive structure layer 43a, preventing the electric field near the spikes from interfering with the organic functional layer above the pixel electrode.
[0069] The raised structure 32 also causes the organic functional layer formed in subsequent steps to become thinner or even disconnected at the boundary of the raised structure 32. This reduces or even eliminates crosstalk between regions of the organic functional layer above adjacent pixel electrodes.
[0070] The photomask used for patterning the bottom region of the pixel definition layer 3 is the same as the photomask used for forming the first conductor layer 41 and the second conductor layer 42 of the pixel electrode. Only one additional photomask needs to be designed to form the pattern of the raised structure 32 of the pixel definition layer 3. The formation process of the pixel definition layer 3 is relatively simple and easy to control.
[0071] exist Figure 1 In the illustrated embodiment, the organic functional layer includes, from bottom to top, a first hole transport layer 51, a first light-emitting layer 52, a first electron transport layer 53, a charge transport layer 54, a second hole transport layer 55, a second light-emitting layer 56, and a second electron transport layer 57. A common electrode 6 covers the organic functional layer.
[0072] It should be noted that the organic functional layer in this embodiment is formed on the entire surface, and a color filter array (not shown) needs to be set in the display panel to achieve color display.
[0073] The following is an introduction Figure 1 The manufacturing process of the display panel is shown.
[0074] refer to Figure 2 A silicon substrate 1 is provided, on which a pixel driving circuit (not shown) and related wiring (not shown) are formed. A passivation layer 2 (silicon oxide), a layer of titanium, and a layer of aluminum are sequentially formed on the silicon substrate 1. A trench H is formed in the titanium and aluminum using a patterning process. Exemplarily, the trench can be a mesh structure. The bottom of the trench H extends into the passivation layer 2, meaning the depth of the trench is greater than the sum of the thicknesses of the first conductor layer 41 and the second conductor layer 42, to ensure that adjacent first conductor layers 41 and second conductor layers 42 are disconnected.
[0075] Continue to refer to Figure 3 A layer of silicon oxide is deposited, and then the silicon oxide is etched to remove the silicon oxide outside the trench H, while retaining a certain thickness of silicon oxide in the trench H, such that the distance between the surface of the silicon oxide in the trench H away from the substrate 1 and the substrate 1 is less than the distance between the surface of the second conductor layer 42 away from the substrate 1 and the substrate 1.
[0076] Continue to refer to Figure 4 A layer of silicon oxide is deposited, extending beyond the first conductor layer 41 and the second conductor layer 42. Selective etching is then performed on the silicon oxide to obtain the pixel definition layer 3. The pixel definition layer 3 extends beyond the trench H in the width direction, forming a protrusion structure 32. Subsequently, wet etching is used to etch the second conductor layer 42, reducing its height. Due to the protective effect of the protrusion structure 32, the peripheral area of the second conductor layer 42 is preserved, forming a boss.
[0077] The bosses and protrusions of the second conductor layer 42 define a groove, and the opening direction of the groove is basically consistent with the protrusion direction of the protrusion.
[0078] Furthermore, the protrusion 32 is positioned opposite to the groove on the surface of the second conductor layer 42 away from the substrate 1. When the third conductor layer 43 is deposited in a subsequent step, the material used to form the third conductor layer 43 fills the groove on the surface of the second conductor layer 42 away from the substrate 1, resulting in a relatively low height of the third conductor layer 43 in these areas, making it easier for the third conductor layer 43 to disconnect from the conductive structure layer 43a.
[0079] refer to Figure 24 The enlarged view shows that during the deposition of the third conductor layer 43, the conductor material first adheres to the surface region of the groove defined by the second conductor layer 42 and the protrusion structure 32. This results in the formation of groove A on the surface of the final third conductor layer 43.
[0080] Continue to refer to Figure 4 The orthographic projection of the pixel definition layer onto the plane of substrate 1 overlaps the orthographic projection of the annular protrusion of the second conductor layer 42 onto the plane of substrate 1. In other words, the pixel definition layer and the annular protrusion at the top of the second conductor layer 42 are generally wider at the top and narrower at the bottom. To ensure sufficient conductivity of the second conductor layer 42 and the first conductor layer 41 as a whole, the etching depth of the second conductor layer 42 needs to be reasonably controlled. For example, the depth range can be maintained at 0.3um ± 0.1um, thereby forming an annular protrusion in the peripheral region of the second conductor layer 42.
[0081] Continue to refer to Figure 5 A layer of indium tin oxide (ITO) is deposited. Due to the blocking effect of the protrusion structure 32, the ITO layer is disconnected at the side surface of the protrusion structure 32, thus obtaining the conductive structure layer 43a and the third conductor layer 43. In this step, a patterning process is required to remove the ITO material from the areas outside the pixel electrode and the conductive structure layer 43a. It should be noted that the ITO material can be replaced with other suitable conductor materials. The conductive structure layer 43a helps to suppress the problem of electric field accumulation at the cathode puncture site.
[0082] Continue to refer to Figure 1 The organic functional layers 51, 52, 53, 54, 55, 56, and 57, and the common electrode 6 are deposited sequentially. (Reference) Figure 5 Since the pixel definition layer 3, the conductive structure layer 43a above it, and the third conductor layer 43 below it form a boss as a whole, and the side surface of the boss is relatively steep, the organic functional layers 51, 52, 53, 54, 55, 56, and 57 become thinner or even broken at the side surface of the raised structure 32, thereby effectively suppressing lateral leakage in the organic functional layer.
[0083] The inventors of this application have discovered that whether the thickness of the pixel definition layer 3 (its height above the bottom surface of the first conductor layer 41) is 100um or 400um, it is more effective in cutting off the third conductor layer 43 from the conductive structure layer 43a and reducing lateral leakage in the organic functional layer.
[0084] Figure 6 The image shown is a simulation of the current density distribution when the thickness of pixel definition layer 3 is 100µm. From... Figure 6 It can be seen that the brightness difference between two adjacent sub-pixels is large (i.e., the current density difference is large), and there is almost no lateral current crosstalk between two adjacent sub-pixels, that is, the distribution of current density has a relatively clear boundary.
[0085] refer to Figure 7 In some embodiments, the display panel further includes an insulating layer 43b disposed on the surface of the conductive structure layer 43a away from the substrate 1. The orthographic projection of the insulating layer 43b onto the plane of the substrate 1 covers substantially the same area as the orthographic projection of the conductive structure layer 42a onto the plane of the substrate.
[0086] After the conductive structure layer 43a and the third conductor layer 43 are formed, an insulating layer 43b covering the conductive structure layer 43a is formed using a patterning process. The material of the insulating layer 43b is, for example, silicon oxide. The function of the insulating layer 43b is to prevent abnormal light emission from the organic functional layer opposite to the conductive structure layer 43a.
[0087] Continue fabricating the organic functional layer and common electrode 6 to obtain the display panel as shown. Figure 8 As shown.
[0088] refer to Figure 9 To further ensure sufficient disconnection between the third conductor layer 43 and the conductive structure layer 43a, and to further reduce the lateral leakage current in the organic functional layer, a second pixel definition layer 31 is formed on the top surface of the first pixel definition layer 30. In this embodiment, the material of the first pixel definition layer 30 is, for example, silicon nitride, and the material of the second pixel definition layer 31 is, for example, silicon oxide. Since the side surface of the second pixel definition layer 31, the side surface of the protrusion structure 32 of the first pixel definition layer 30, and the inner peripheral surface of the annular protrusion of the second conductor layer 42 successively contract towards the central region of the first pixel definition layer 30, forming a multi-step surface, this makes the conductive structure layer 43a and the third conductor layer 43 more reliably disconnected during the deposition of the conductor material used to form the third conductor layer 43. Furthermore, the organic functional layer becomes thinner or has a greater degree of disconnection at the multi-step surface, further reducing the lateral leakage current in the organic functional layer.
[0089] Both the first pixel definition layer 30 and the second pixel definition layer 31 are used to define the grid areas of the organic functional layer. Therefore, the second pixel definition layer 31 and the first pixel definition layer 30 can also be collectively referred to as the first pixel definition layer.
[0090] The following is an introduction Figure 9 The method for manufacturing the display panel shown.
[0091] exist Figure 3 A layer of silicon nitride 300 is deposited on top of this, followed by a layer of silicon oxide 301, to obtain... Figure 10 The structure shown.
[0092] Continue to refer to Figure 11 A photoresist is coated and exposed and developed to obtain a mask pattern 302. Under the mask pattern 302, silicon oxide 301 is etched to obtain the second pixel definition layer 31.
[0093] Continue to refer to Figure 12 Under the masking of the mask pattern 302 and the second pixel definition layer 31, the silicon oxide 300 is wet etched. The etching time is controlled so that the first pixel definition layer 30 obtained by etching is shrunken relative to the second pixel definition layer, thereby causing the side surface of the pixel definition layer itself to shrink in a step-like manner from top to bottom.
[0094] The subsequent manufacturing process is the same as in the aforementioned embodiments and will not be described in detail here. Figure 9 The display panel shown.
[0095] refer to Figure 13 In other embodiments, in Figure 12 Based on the structure shown, after forming a conductive structure layer 43a on the second pixel definition layer 32, an insulating layer 43b is then formed on the conductive structure layer 43a using a patterning process. The purpose of the insulating layer 43b is to prevent abnormal light emission from the organic functional layer above the conductive structure layer 43a.
[0096] Continue to refer to Figure 14 In subsequent steps, an organic functional layer and a common electrode 6 are deposited to obtain the display panel.
[0097] In other embodiments, reference is made to... Figure 15 ,and Figure 14 The difference in the illustrated embodiment is that, during the patterning process to form the insulating layer 43b, the mask pattern 302 is recessed relative to the insulating layer 43b, i.e., the opening size of the mask pattern 302 is increased. For example, the mask pattern 302 and the insulating layer 43b differ in width by 0.1 to 0.3 μm. The material of the insulating layer 43b is, for example, silicon oxide.
[0098] For example, when wet etching is used to etch the insulating layer 43b, a portion of the second pixel definition layer 31 will also be etched away. (Reference) Figure 15 The side surfaces of the first pixel definition layer 30, the second pixel definition layer 31, the conductive structure layer 43a, and the insulating layer 34b alternately protrude and recede in sequence. This further facilitates the cutting off of the organic functional layer.
[0099] refer to Figure 17 ,exist Figure 16 Based on this, an organic functional layer and a common electrode are formed. 6. The organic functional layer is essentially cut off at the boundary of the pixel definition layer. This further helps to reduce the lateral leakage of the organic functional layer.
[0100] In other embodiments, reference is made to Figure 18 The first conductor layer has a four-layer structure, consisting of a first conductor layer 41, a second conductor layer 42, a third conductor layer 41, and a fourth conductor layer 42, from bottom to top. The first conductor layer 41 is, for example, titanium, and the second conductor layer 42 is, for example, aluminum.
[0101] refer to Figure 19 As in the previous embodiment, the trench H is filled with insulating material.
[0102] refer to Figure 20 The middle region of the uppermost second conductor layer 42 is removed, and a pixel definition layer 3 with a raised structure 32 is formed. It should be noted that the uppermost second conductor layer 42 can also be completely removed, which makes the size of the raised structure protruding towards the pixel electrode side larger.
[0103] Continue to refer to Figure 21 When the third conductor layer 43 is deposited, the third conductor layer 43 is disconnected from the conductive structure layer 43a located above the pixel definition layer 3 due to the protrusion structure 32 of the pixel definition layer 3.
[0104] Continue to refer to Figure 22 Subsequently, an organic functional layer and a common electrode 6 are formed to obtain a display panel.
[0105] It should be noted that pixel electrodes are not limited to multi-layer structures. For example, combining... Figure 4 , can Figure 4 Based on this, the first conductor layer 41 and the second conductor layer 42 are completely removed, and then a conductor layer is deposited to simultaneously obtain the pixel electrode and the conductive structure layer.
[0106] The various embodiments in this disclosure are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.
[0107] The scope of protection of this disclosure is not limited to the embodiments described above. Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its scope and spirit. If such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, then the intent of this disclosure also includes such modifications and variations.
Claims
1. A display panel, characterized in that, include: Base; Multiple pixel electrodes are located on one side of the substrate, and the pixel electrodes are divided into a first conductor layer, a second conductor layer and a third conductor layer from bottom to top; A pixel definition layer is disposed on one side of the substrate and located between the plurality of pixel electrodes, the pixel definition layer defining a pixel opening region and the pixel definition layer being used to separate the pixel electrodes from each other; A conductive structure layer located on the side of the pixel definition layer away from the substrate, wherein the orthographic projection of the conductive structure layer onto the plane of the substrate substantially coincides with the orthographic projection of the pixel definition layer onto the plane of the substrate; An organic functional layer covering the pixel electrode and the conductive structure layer, wherein the pixel definition layer is used to define a light-emitting region of a sub-pixel from the organic functional layer; The pixel definition layer includes a raised structure, which is located in a section of the pixel definition layer away from the substrate and protrudes laterally. There is an overlap between the orthographic projection of the protrusion structure on the substrate and the orthographic projection of the pixel electrode on the substrate. At the overlap area of the protrusion structure and the pixel electrode, a groove is formed on the surface of the pixel electrode. The opening direction of the groove is basically consistent with the protrusion direction of the protrusion structure. The first conductor layer and the second conductor layer of the pixel electrode are located below the protrusion structure. Each of the first conductor layer and the second conductor layer has a portion located between the protrusion structure and the substrate. A boss is formed on the edge region of the top surface of the second conductor layer. The boss section is located between the protrusion structure and the substrate. The orthographic projection of the protrusion structure on the plane where the substrate is located covers and extends beyond the orthographic projection of the boss section on the plane where the substrate is located. The boss of the second conductor layer and the protrusion structure define the groove. The third conductor layer and the conductive structure layer are disposed in the same layer and are disconnected at the side surface of the protrusion structure.
2. The display panel according to claim 1, characterized in that, The protrusion structure surrounds the pixel opening region defined by the pixel definition layer, and / or the boss surrounds the pixel electrode.
3. The display panel according to claim 1, characterized in that, The display panel further includes an insulating layer disposed on the conductive structure layer, wherein there is an overlapping area between the orthographic projection of the insulating layer on the substrate and the orthographic projection of the conductive structure layer on the substrate.
4. The display panel according to claim 1, characterized in that, The pixel definition layer includes a first pixel definition layer and a second pixel definition layer disposed on the side of the first pixel definition layer away from the substrate. The conductive structure layer is disposed on the surface of the second pixel definition layer away from the substrate. The pixel definition layer also includes an insulating layer disposed on the surface of the conductive structure layer away from the substrate. At least a portion of the protruding structure is formed by a segment of the first pixel definition layer on the side away from the substrate; The orthographic projection of the first pixel definition layer onto the plane of the substrate exceeds the orthographic projection of the second pixel definition layer onto the plane of the substrate, and the orthographic projection of the conductive structure layer onto the plane of the substrate exceeds the orthographic projections of the second pixel definition layer and the insulating layer onto the plane of the substrate.
5. A method for manufacturing a display panel according to any one of claims 1 to 4, characterized in that, include: Provide a base; Multiple pixel electrodes are formed on the substrate; A pixel definition layer is formed on the substrate between the pixel electrodes; A conductive structure layer is formed on the side of the pixel definition layer away from the substrate; The pixel definition layer includes a raised structure located in a section of the pixel definition layer away from the substrate and protruding laterally. The orthographic projection of the raised structure on the substrate overlaps with the orthographic projection of the pixel electrode on the substrate. At the overlapping area of the raised structure and the pixel electrode, a groove is formed on the surface of the pixel electrode, and the opening direction of the groove is substantially consistent with the protrusion direction of the raised structure.
6. The preparation method according to claim 5, characterized in that, Before forming the pixel electrode and the pixel definition layer, a passivation layer is formed on the substrate; the steps for forming the pixel electrode and the pixel definition layer specifically include: Multiple conductive material layers are formed on the passivation layer; A grid-like trench is etched in the plurality of conductor material layers to obtain a plurality of conductor layers stacked in each grid, and the bottom of the trench enters the passivation layer; The trench is filled with insulating material, the top surface of which is lower than the opening of the trench. A pixel definition layer is formed using a patterning process, and the top of the pixel definition layer extends laterally beyond the opening of the trench to form the protrusion structure; The top conductor layer of the plurality of conductor layers is etched to form a protrusion composed of the top conductor layer below the protrusion structure of the pixel definition layer, wherein the orthographic projection of the protrusion structure onto the plane of the substrate exceeds the orthographic projection of the protrusion onto the plane of the substrate, or the top conductor layer of the plurality of conductor layers is completely removed. A conductor material layer is deposited again to obtain the top conductor layer of the pixel electrode and the conductive structure layer.
7. A display device, characterized in that, include: The display panel according to any one of claims 1 to 4.